TWM591260U - Active RGB light-emitting diode display carrier board - Google Patents

Abstract

An active RGB light emitting diode display carrier board includes a substrate, a circuit layer, a plurality of transistor chips, a solder mask layer and a plurality of light emitting diode chips, the circuit layer includes a gate circuit and a source Gate circuit and a drain circuit, the transistor chip has a gate terminal, a source terminal and a drain terminal, the gate terminal and the source terminal are respectively mounted on the gate circuit and the source circuit, the solder mask covers the substrate, the circuit layer and In the transistor wafer, the solder resist layer has a plurality of first via holes and a plurality of second via holes. Hole copper is formed in the first and second via holes. Each light-emitting diode chip has an N-pole electrical contact and a P-pole electrical contact, and the hole copper of the first via hole is electrically connected between the drain terminal and the N pole electrical contact, and the hole of the second via hole Copper is electrically connected between the drain circuit and the P-electrode contact.

Description

Active RGB light emitting diode display carrier board

The invention relates to a light-emitting diode display carrier board, in particular to an active light-emitting diode display carrier board.

With the gradual development of mini LED technology, the development prospects of LED displays are highly anticipated.

Among them, the light emitting diode display can be divided into two types of passive driving and active driving according to the difference of driving methods. The passive driving method needs to arrange row and column matrix scanning electrodes and data electrodes on the substrate, and directly use the scanning signal to drive the light-emitting diode chips in each frame. However, because the scanning electrodes and data electrodes are arranged in a row and matrix matrix, The circuit configuration is complicated, resulting in the number of layers of the passive light-emitting diode display carrier board usually reaching six, eight or more layers of circuits, resulting in increased processing costs.

On the other hand, the active driving method is to directly form a plurality of thin film transistors on the glass or polyimide (PI) substrate by sputtering, and the light-emitting diode chips in each pixel can be individually controlled Although the active light-emitting diode display reduces the number of layers of the carrier board by setting the thin film transistor, the process cost of forming the thin film transistor by sputtering is still relatively high, and the glass substrate has a fragile characteristic The amide imine substrate has a relatively high cost, so that although the existing active light-emitting diode display is relatively thin and light, there are still other deficiencies such as higher cost.

In view of this, the main purpose of the new model is to provide a carrier board with low manufacturing cost The active light emitting diode display carrier board with fewer layers than the passive light emitting diode display.

In order to achieve the above and other objects, the present invention provides an active RGB light emitting diode display carrier board, which includes a substrate, a circuit layer, a plurality of transistor chips, a solder mask layer and a plurality of light emitting diode chips, The circuit layer is formed on the substrate and includes a gate circuit, a source circuit, and a drain circuit. Each transistor chip has a gate terminal, a source terminal, and a drain terminal. The source terminal is respectively mounted on the gate circuit and the source circuit of the circuit layer and forms an electrical connection, the solder mask layer covers the substrate, the circuit layer and the transistor chip, and the solder mask layer has a plurality of first via holes and a plurality of In the second via holes, hole copper is formed in the first and second via holes. Each light-emitting diode chip has an N-pole electrical contact and a P-pole electrical contact, the light-emitting diode chips are mounted on the solder mask, and the copper holes of the first via holes are electrically connected respectively Between the drain terminals of the transistor chips and the N-pole electrical contacts of the light-emitting diode chips, the copper holes of the second via holes are electrically connected to the drain circuit and the light-emitting diodes, respectively Between the P-electrode contacts of the bulk wafer.

In order to achieve the above and other objects, the present invention provides an active RGB light emitting diode display carrier board, which includes a substrate, a circuit layer, a plurality of transistor chips, a solder mask layer and a plurality of light emitting diode chips, The circuit layer is formed on the substrate and includes a gate circuit, a source circuit, and a drain circuit. Each transistor chip has a gate terminal, a source terminal, and a drain terminal. The source terminal is respectively mounted on the gate circuit and the source circuit of the circuit layer and forms an electrical connection, the solder mask layer covers the substrate, the circuit layer and the transistor chip, and the solder mask layer has a plurality of first via holes and a plurality of In the second via holes, hole copper is formed in the first and second via holes. Each light-emitting diode chip has a P-pole electrical contact and an N-pole electrical contact, the light-emitting diode wafers are mounted on the solder mask, and the copper holes of the first via holes are electrically connected respectively Between the drain terminals of the transistor chips and the P-electrode contacts of the light-emitting diode chips, the copper holes of the second via holes are electrically connected to the drain circuit and Between the N-pole electrical contacts of the light-emitting diode chips.

By embedding the transistor chip in the solder mask layer, and then using via holes, the two electrodes mounted on the surface of the solder mask layer are electrically connected to the transistor chip and the drain electrode, thereby not only realizing RGB light emitting diodes The active drive design of the display, and the number of layers is lower than that of the traditional passive light-emitting diode display, and the cost is lower than the existing active light-emitting diode display using thin film transistors, which can meet the industry's The thinning and thinning of the carrier board of the diode display requires cost reduction.

10‧‧‧ substrate

20‧‧‧ circuit layer

21‧‧‧Gate circuit

22‧‧‧Source circuit

23‧‧‧ Drain circuit

30‧‧‧Transistor chip

31‧‧‧ Extreme

32‧‧‧Source extreme

33‧‧‧ Extreme

40‧‧‧Soldering layer

41‧‧‧First via

42‧‧‧Second via

43, 44‧‧‧ hole copper

45‧‧‧First plating layer

46‧‧‧Second plating layer

47, 48‧‧‧ LED pad

50‧‧‧ LED chip

51‧‧‧N pole electric contact

52‧‧‧P pole contact

FIG. 1 is a partially exploded perspective view of one embodiment of a new active RGB light emitting diode display carrier board.

FIG. 2 is a schematic cross-sectional view of one embodiment of a new active RGB light emitting diode display carrier board.

FIG. 3 is a schematic cross-sectional view of another embodiment of a new active RGB light-emitting diode display carrier board.

FIG. 4 is a schematic cross-sectional view of a third embodiment of a new active RGB light-emitting diode display carrier board.

Please refer to Figs. 1 and 2, which depicts one embodiment of an active RGB light emitting diode display carrier, which includes a substrate 10, a circuit layer 20, a plurality of transistor chips 30, and a solder mask Layer 40 and a plurality of light emitting diode wafers 50.

The substrate 10 may use a substrate material commonly used in general circuit boards, such as FR-4 grade epoxy resin.

The circuit layer 20 is formed on the substrate 10, and the circuit layer 20 includes a gate electrode The circuit 21, a source electrode circuit 22 and a drain electrode circuit 23. The transistor chip 30 has three electrical contacts: a gate terminal 31, a source terminal 32 and a drain terminal 33, wherein the gate terminal 31 and the source terminal 32 are respectively mounted on the gate circuit 21 and the source circuit of the circuit layer 20 22 and form an electrical connection respectively. An electrical connection may be formed between the gate terminal 31 and the gate level circuit 21 through conductive glue or solder balls, and the source terminal 31 and the source circuit 22 are the same. In this embodiment, the circuit layer is a single-layer structure as an example. In other possible implementations, the circuit layer may also be a laminated structure, so that it has higher design freedom and can be used to design more complicated circuits. However, compared with passive light-emitting diode displays, the number of structural layers of the new type will still be lower.

The solder resist layer 40 covers the substrate 10, the circuit layer 20 and the transistor wafers 30, and the solder resist layer has a plurality of first via holes 41 and a plurality of second via holes 42, these first and second via holes 41, Holes 43 and 44 are formed in 42 respectively. The first and second via holes are formed by laser drilling or mechanical drilling, for example.

The light-emitting diode chips 50 each have an N-pole electrical contact 51 and a P-pole electrical contact 52, which may be flip chip light-emitting diode chips, and the light-emitting diode chip 50 is mounted on the solder mask 40 On the top, the hole copper 43 of the first via hole 41 is electrically connected between the drain terminal 33 of the transistor wafer 30 and the N pole electrical contact 51 of the light emitting diode chip 50, and the hole copper 44 of the second via hole 42 Then, they are respectively electrically connected between the drain circuit 23 and the P-electrode contact 52 of the light-emitting diode chip 50. In order to increase the mounting reliability of the N-pole electrical contact 51 and the P-pole electrical contact 52, a first plating layer 45 can be formed on the top surface of the hole copper 43 of the first via hole 41 and a hole in the second via hole 42 A second electroplating layer 46 is formed on the top surface of the copper 44 so that the N-electrode contact 51 and the P-electrode contact 52 are mounted on the first and electroplating layers 45 and 46, respectively. As an RGB light emitting diode display, the mounted light emitting diode chips are respectively used to emit red light, green light and blue light, and three light emitting diode chips respectively emitting red, green and blue light form a pixel. Each RGB light emitting diode display has a plurality of pixels.

In this embodiment, the transistor wafer 30 is a PNP transistor, that is, when the gate terminal 31 In the selected state (on), current flows through the source circuit 22 and the source terminal 32 of the transistor chip 30 in sequence, then to the drain terminal 33, and finally enters the N-pole electrical contact 51 and drives the light-emitting diode chip 50 to emit light .

As shown in FIG. 3, in other possible implementations, the transistor wafer may be an NPN transistor, that is, when the gate terminal 31 is in the selected state (open), current will flow from the drain circuit 23 via the second The copper hole 44 in the via hole 42 enters the N-pole electrical contact 51 and drives the light-emitting diode chip 50 to emit light, and then sequentially flows through the drain electrode 33 through the hole copper 43 of the first via hole 41 through the P-electrode contact 52 And the source terminal 32, and then enter the source circuit 22. Therefore, in this embodiment, the copper hole 43 of the first via 41 is electrically connected between the drain terminal 33 and the P-electrode contact 52, and the copper hole 44 of the second via 42 is electrically connected to the drain circuit 23 Between the N-electrode contact 51, the P-electrode contact 52 and the N-electrode contact 51 are mounted on the first and second plating layers 45 and 46, respectively.

In the third embodiment shown in FIG. 4, the P and N pole electrical contacts 51 and 52 are not directly opposed to the first and second via holes 41 and 42 but are attached to the first and second vias The tops of the holes 41 and 42 extend and are formed on the light-emitting diode pads 47 and 48 on the top surface of the solder mask 40.

In summary, by embedding the transistor chip in the solder mask layer, and then using via holes, the two electrodes mounted on the surface of the solder mask layer are electrically connected to the transistor chip and the drain electrode, which not only achieves RGB light emission The active drive design of the diode display, and the number of layers is lower than that of the traditional passive light-emitting diode display, and because the cost of the transistor chip is low, the cost is lower than that of the existing active light-emitting diode using the thin film transistor The body display is lower, which can meet the needs of the industry for lighter and thinner light-emitting diode display carrier and cost reduction.

10‧‧‧ substrate

20‧‧‧ circuit layer

21‧‧‧Gate circuit

22‧‧‧Source circuit

23‧‧‧ Drain circuit

30‧‧‧Transistor chip

31‧‧‧ Extreme

32‧‧‧Source extreme

33‧‧‧ Extreme

40‧‧‧Soldering layer

41‧‧‧First via

42‧‧‧Second via

43, 44‧‧‧ hole copper

45‧‧‧First plating layer

46‧‧‧Second plating layer

50‧‧‧ LED chip

51‧‧‧N pole electric contact

52‧‧‧P pole contact

Claims (5)

An active RGB light emitting diode display carrier board, including: A substrate A circuit layer formed on the substrate, the circuit layer includes a gate circuit, a source circuit and a drain circuit; A plurality of transistor chips, each having a gate terminal, a source terminal and a drain terminal, the gate terminal and the source terminal of these transistor chips are respectively mounted on the gate circuit and the source circuit of the circuit layer And form electrical connection separately; A solder mask layer covering the substrate, the circuit layer and the transistor chips, the solder mask layer has a plurality of first via holes and a plurality of second via holes, formed in the first and second via holes, respectively Perforated copper; and A plurality of light-emitting diode chips, each having an N-pole electrical contact and a P-pole electrical contact, the light-emitting diode wafers are mounted on the solder resist layer, and the holes of the first via holes are copper Are electrically connected between the drain terminals of the transistor chips and the N-pole electrical contacts of the light-emitting diode chips, and the copper holes of the second via holes are electrically connected to the drain circuit, respectively Between the P-electrode contacts of these light-emitting diode chips. The active RGB light emitting diode display carrier according to claim 1, wherein a plurality of first electroplating layers are formed on the top surfaces of the copper holes of the first via holes, and the top holes of the copper holes of the second via holes A plurality of second electroplating layers are respectively formed on the surface, and the N-electrode contacts and the P-electrode contacts of the light-emitting diode chips are respectively mounted on the first electroplating layers and the second electroplating layers Plating. An active RGB light emitting diode display carrier board, including: A substrate A circuit layer formed on the substrate, the circuit layer includes a gate circuit, a source circuit and a drain circuit; A plurality of transistor chips, each having a gate terminal, a source terminal and a drain terminal, the gate terminal and the source terminal of these transistor chips are respectively mounted on the gate circuit and the source circuit of the circuit layer And form electrical connection separately; A solder mask layer covering the substrate, the circuit layer and the transistor chips, the solder mask layer has a plurality of first via holes and a plurality of second via holes, formed in the first and second via holes, respectively Perforated copper; and A plurality of light-emitting diode chips, each having a P-pole electrical contact and an N-pole electrical contact, the light-emitting diode wafers are mounted on the solder resist layer, and the holes of the first via holes are copper Are electrically connected between the drain terminals of the transistor chips and the P-electrode contacts of the light-emitting diode chips, and the copper holes of the second via holes are electrically connected to the drain circuit, respectively Between the N-pole electrical contacts of these light-emitting diode chips. The active RGB light emitting diode display carrier according to claim 3, wherein a plurality of first plating layers are formed on the top surfaces of the copper holes of the first via holes, and the top holes of the copper holes of the second via holes A plurality of second electroplated layers are formed on the surface, and the P-electrode contacts and the N-electrode contacts of the light-emitting diode chips are respectively mounted on the first electroplated layers and the second electroplated layers Plating. The active RGB light emitting diode display carrier according to any one of claims 1 to 4, wherein the light emitting diode chips are flip chip light emitting diode chips.

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