TWM590341U - LED driving structure - Google Patents
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- TWM590341U TWM590341U TW108214291U TW108214291U TWM590341U TW M590341 U TWM590341 U TW M590341U TW 108214291 U TW108214291 U TW 108214291U TW 108214291 U TW108214291 U TW 108214291U TW M590341 U TWM590341 U TW M590341U
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Abstract
一種LED驅動結構,其包括有電性連接之一LED模組、一電源供應電路、一穩壓電路、一溫度補償迴路及一氮化鎵場效電晶體,其中電源供應電路用以供應電流給LED模組;穩壓電路包括有一整流二極體、一電阻及一稽納二極體,並經溫度補償迴路連接至氮化鎵場效電晶體的閘極,用以提供穩定的電壓;溫度補償迴路包括有至少一個電阻、一熱敏電阻及一電晶體連接至氮化鎵場效電晶體的閘極,用以使LED模組通電後在電壓變動及溫度變動時仍能維持其功率不變動。An LED driving structure includes an LED module electrically connected, a power supply circuit, a voltage stabilizing circuit, a temperature compensation loop and a gallium nitride field effect transistor, wherein the power supply circuit is used to supply current to LED module; the voltage stabilizing circuit includes a rectifying diode, a resistor and an acceptor diode, and is connected to the gate electrode of the gallium nitride field effect transistor through a temperature compensation loop to provide a stable voltage; temperature The compensation loop includes at least one resistor, a thermistor, and a transistor connected to the gate of the GaN field effect transistor, which is used to enable the LED module to maintain its power when the voltage changes and the temperature changes change.
Description
本創作與LED有關,尤指一種LED的驅動電路結構。This creation is related to LEDs, especially an LED drive circuit structure.
按,發光二極體(Light-emitting diode,LED)由於效率高、壽命長、不易破損、反應速度快、可靠性高等傳統光源不及的優點,在技術逐漸進步且降低生產成本之後被普遍應用於照明用途上。尤其現今市場多使用高電壓小電流的高壓LED,高壓LED是在單晶片上置入LED矩陣,使其具備可調整電壓及電流之功能,讓LED光源因單一晶片而達到單一輸出的光源效果,用以改善光學設計、簡化LED封裝製程、提升發光效率。但高壓LED對於電壓的穩定要求高,尤其是驅動電路中的開關元件,即金屬氧化物半導體場效電晶體(MOSFET),但是有一種新的開關元件,即氮化鎵場效電晶體的閘極(GaNFET)正在興起,然而新的GaNFET雖具有更高的效率、更快的開關頻率及超小型封裝尺寸之優點,但相對更需要嚴格的閘源電壓驅動,因此習知LED的驅動電路通常會設置穩壓電路,用以穩定LED的工作電壓,進而維持其功率不墜。Light-emitting diode (LED) has been widely used after the technology has gradually improved and the production cost has been reduced due to the advantages of traditional light sources, such as high efficiency, long life, easy to break, fast response, and high reliability. For lighting purposes. Especially in today's market, high-voltage and low-current high-voltage LEDs are mostly used. High-voltage LEDs are placed on a single chip with an LED matrix, which has the function of adjusting the voltage and current, so that the LED light source can achieve a single output light source effect due to a single chip. It is used to improve optical design, simplify LED packaging process, and improve luminous efficiency. However, high-voltage LEDs have high requirements for voltage stability, especially the switching elements in the drive circuit, that is, metal oxide semiconductor field effect transistors (MOSFETs), but there is a new switching element, the gate of the gallium nitride field effect transistor. (GaNFET) is rising, but the new GaNFET has the advantages of higher efficiency, faster switching frequency and ultra-small package size, but it requires relatively strict gate-source voltage drive, so the conventional LED drive circuit is usually A voltage stabilizing circuit will be set up to stabilize the operating voltage of the LED and thus maintain its power.
然而LED在工作中會產生大量熱能而使溫度升高,並因其半導體材料性質之故,導致電壓及功率下降,且為了縮小體積而將高壓LED與驅動電路整合在一片電路板上,LED發光產生的高熱勢必會影響到驅動電路的電子元件,惟若不想辦法解決LED燈產生的熱對周邊電子元件產生的影響,則再好的穩壓電路都不足以彌補衰減的功率,以致LED燈的工作表現仍然低落。有鑑於此,如何改進上述問題即為本創作所欲解決之首要課題。However, the LED will generate a lot of heat energy during operation to increase the temperature, and due to the nature of its semiconductor material, the voltage and power will be reduced. In order to reduce the volume, the high-voltage LED and the driving circuit are integrated on a circuit board, and the LED emits light. The high heat generated will inevitably affect the electronic components of the driving circuit, but if you do not want to solve the effect of the heat generated by the LED lamp on the surrounding electronic components, then no good voltage regulator circuit can make up for the attenuated power, so that the LED lamp Work performance is still low. In view of this, how to improve the above-mentioned problems is the primary issue for this creation.
本創作之主要目的在於提供一種LED驅動結構,其利用穩壓電路中設計一溫度補償迴路在電壓變動及溫度變動時仍能使LED維持固定功率,防止LED通電發光後因所產生的溫度影響驅動電路的電子元件導致功率下降的情形。The main purpose of this creation is to provide an LED driving structure, which uses a temperature compensation circuit in the voltage stabilizing circuit to keep the LED at a fixed power during voltage fluctuations and temperature fluctuations, and to prevent the LED from being driven due to the influence of temperature on the drive. A situation in which the electronic components of a circuit cause a power drop.
本創作之再一目的在於提供一種LED驅動結構,其中利用穩壓電路中設計一溫度補償迴路可以提供更穩定及更嚴格的電壓給予氮化鎵場效電晶體的閘極,以提升氮化鎵場效電晶體更好的工作效能,讓LED能維持在恆定功率。Another purpose of this creation is to provide an LED driving structure, in which a temperature compensation circuit is designed in the voltage stabilizing circuit to provide a more stable and stricter voltage to the gate of the GaN field effect transistor to improve the GaN The field-effect transistor has better working efficiency, so that the LED can maintain a constant power.
為達前述之目的,本創作提供一種LED驅動結構,其包括有電性連接之一LED模組、一電源供應電路、一穩壓電路、一溫度補償迴路及一氮化鎵場效電晶體,其中: 該電源供應電路用以供應電流給該LED模組; 該穩壓電路包括有一整流二極體、一電阻及一稽納二極體,並經該溫度補償迴路連接至該氮化鎵場效電晶體,用以提供穩定的電壓; 該溫度補償迴路包括有至少一個電阻、一熱敏電阻及一電晶體連接至該氮化鎵場效電晶體的閘極,用以使該LED模組在通電後產生熱量時維持其功率不變動。 To achieve the foregoing purpose, the present invention provides an LED driving structure, which includes an LED module electrically connected, a power supply circuit, a voltage stabilizing circuit, a temperature compensation circuit, and a gallium nitride field effect transistor, among them: The power supply circuit is used to supply current to the LED module; The voltage stabilizing circuit includes a rectifying diode, a resistor and an acceptor diode, and is connected to the gallium nitride field effect transistor through the temperature compensation circuit to provide a stable voltage; The temperature compensation circuit includes at least one resistor, a thermistor, and a transistor connected to the gate of the gallium nitride field effect transistor to keep the power of the LED module unchanged when generating heat after being energized .
較佳地,該穩壓電路更包括有一電容器。Preferably, the voltage stabilizing circuit further includes a capacitor.
較佳地,該LED模組係以晶片直接封裝技術製成。Preferably, the LED module is made by chip direct packaging technology.
於一實施例中,該LED模組為車用高壓LED。In one embodiment, the LED module is a high-voltage LED for vehicles.
而本創作之上述目的與優點,不難從下述所選用實施例之詳細說明與附圖中獲得深入了解。However, it is not difficult to obtain an in-depth understanding from the detailed description and drawings of the selected embodiments below for the above purposes and advantages of this creation.
請參閱第1圖,所示者為本創作提供之LED驅動結構,包括有電性連接之一LED模組1、一電源供應電路2、一穩壓電路3、一溫度補償迴路4及一氮化鎵場效電晶體5(GaN FET)。於本實施例中,該LED模組1為車用高壓LED,且以晶片直接封裝(Chip on Board,COB)技術製成。Please refer to the first figure, which shows the LED driving structure provided for the creation, including an
承上,該電源供應電路2包括有複數個二極體,用以供應電流給該LED模組1,本實施例中,該電源供應電路2具有複數個整流二極體,用以供應一定電流給該LED模組。該穩壓電路3包括有一整流二極體D1、一電阻R1、一電容器C1及一稽納二極體ZD1,並連接至該氮化鎵場效電晶體5的閘極,用以提供穩定的電壓。該溫度補償迴路4包括有連接該穩壓電路3的二電阻R2、R3、一熱敏電阻NTC1及一電晶體Q1,且電晶體Q1連接至該氮化鎵場效電晶體5的閘極,用以溫度變化時補償其電壓。According to the above, the
當LED模組1通電後,其產生熱能而使溫度升高,此時LED模組1的電壓下降,氮化鎵場效電晶體5的導通電阻上升,使電流降低,導致整體功率下降。但藉由上述電路結構,在溫度上升後,熱敏電阻NTC1的電阻值下降,使電晶體Q1及氮化鎵場效電晶體5的電壓上升,進而使電流增加,藉此與前述因熱而衰減的情形相抵,而能維持該LED模組1的工作效率。When the
本創作之特點在於溫度補償迴路4使溫度的變化不會造成電壓不穩定的結果,不但可提供穩定電壓給LED模組1,同時氮化鎵場效電晶體5亦能以穩定的電壓驅動LED模組1。The characteristic of this creation is that the temperature compensation circuit 4 makes the temperature change not cause the result of voltage instability. Not only can it provide a stable voltage to the
惟,以上實施例之揭示僅用以說明本創作,並非用以限制本創作,故舉凡等效元件之置換仍應隸屬本創作之範疇。However, the disclosures of the above embodiments are only used to illustrate the creation, not to limit the creation, so the replacement of equivalent elements should still belong to the scope of the creation.
綜上所述,可使熟知本領域技術者明瞭本創作確可達成前述目的,實已符合專利法之規定,爰依法提出申請。In summary, those skilled in the art can understand that this creation can indeed achieve the aforesaid objectives, and in fact have complied with the provisions of the Patent Law, and file an application in accordance with the law.
1‧‧‧LED模組
2‧‧‧電源供應電路
3‧‧‧穩壓電路
4‧‧‧溫度補償迴路
5‧‧‧氮化鎵場效電晶體
C1‧‧‧電容器
D1‧‧‧整流二極體
NTC1‧‧‧熱敏電阻
Q1‧‧‧電晶體
R1、R2、R3‧‧‧電阻
ZD1‧‧‧稽納二極體
1‧‧‧
第1圖為本創作之電路示意圖。Figure 1 is a schematic diagram of the circuit created.
1‧‧‧LED模組 1‧‧‧LED module
2‧‧‧電源供應電路 2‧‧‧Power supply circuit
3‧‧‧穩壓電路 3‧‧‧ Voltage stabilizing circuit
4‧‧‧溫度補償迴路 4‧‧‧Temperature compensation circuit
5‧‧‧氮化鎵場效電晶體 5‧‧‧GaN FET
C1‧‧‧電容器 C1‧‧‧Capacitor
D1‧‧‧整流二極體 D1‧‧‧rectifier diode
NTC1‧‧‧熱敏電阻 NTC1‧‧‧Thermistor
Q1‧‧‧電晶體 Q1‧‧‧Transistor
R1、R2、R3‧‧‧電阻 R1, R2, R3 ‧‧‧ resistance
ZD1‧‧‧稽納二極體 ZD1‧‧‧Inspect Diode
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108214291U TWM590341U (en) | 2019-10-30 | 2019-10-30 | LED driving structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108214291U TWM590341U (en) | 2019-10-30 | 2019-10-30 | LED driving structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM590341U true TWM590341U (en) | 2020-02-01 |
Family
ID=70414485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108214291U TWM590341U (en) | 2019-10-30 | 2019-10-30 | LED driving structure |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM590341U (en) |
-
2019
- 2019-10-30 TW TW108214291U patent/TWM590341U/en not_active IP Right Cessation
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