TWM544117U - Pixel structure and display panel - Google Patents

Abstract

A pixel structure including a first signal line, a second signal line, an active device, a first electrode and a second electrode is provided. A channel area is between a source electrode and a drain electrode of the active device. The second electrode has a plurality stripe openings overlapped with the first electrode and an aperture exposing the channel area. The aperture is overlapped with the active device and has a first side and a second side. A first distance between the first side and a side of the first signal line away from a gate electrode of the active device and a second distance between the second side and a side of the gate electrode away from the first signal line are respectively larger than or equal to 3 microns. A display panel is also provided.

Description

Pixel structure and display panel

The novel creation relates to a pixel structure and a display panel, and in particular to a pixel structure and a display panel for improving light leakage.

In recent years, thin film transistor liquid crystal display panels (TFT-LCD panels) with high image quality, good space utilization efficiency, low power consumption, and no radiation have gradually become the mainstream in the market, and high-resolution thin film transistors are also used. Liquid crystal display panels have received much attention. The higher the resolution of the display panel, the higher the density of the pixel structure. Under the design of the traditional thin film transistor, the electric field near the thin film transistor affects the rotation of the liquid crystal molecules, which causes light leakage near the thin film transistor, and the light leakage problem becomes more significant as the density of the pixel structure is higher. Light leakage near the thin film transistor is generally shielded by increasing the shielding area of the light shielding layer. However, the larger the shielding area of the light shielding layer, the smaller the aperture ratio of the pixel structure. Therefore, how to improve the light leakage problem without greatly affecting the aperture ratio has become one of the topics that researchers in this field want to solve.

The novel creation provides a pixel structure that does not affect the aperture ratio. In case, the problem of light leakage is improved.

The novel creation also provides a display panel with good display quality.

A pixel structure created by the present invention is disposed on a substrate. The pixel structure includes a first signal line, a second signal line, an active element, a first electrode, and a second electrode. The second signal line intersects the first signal line. The active component is electrically connected to the first signal line and the second signal line, wherein the active component includes a gate, a channel layer, a source, and a drain. The gate is electrically connected to the first signal line. The channel layer overlaps the gate. The source is electrically connected to the second signal line. The source and drain are overlapped with the channel layer and opposite each other such that the channel layer defines a channel region between the source and the drain. The first electrode is electrically connected to the drain. The second electrode is electrically insulated and overlaps the first electrode, wherein the second electrode has a plurality of strip openings and openings. The strip opening overlaps the first electrode. The aperture overlaps the active component and has a first side and a second side. The first side and the source are on the same side of the gate. The second side and the drain are on the same side of the gate. The opening exposes the passage area. The first side and the second side are respectively located above the gate. The first distance between the first side and the side of the first signal line away from the gate and the second distance between the second side and the side of the gate remote from the first signal line are respectively greater than or equal to 3 microns.

A display panel created by the present invention includes a plurality of the above pixel structures, a counter substrate, and a display medium. The pixel structure is disposed on the substrate. The opposite substrate is opposite to the substrate, and the pixel structure is located between the substrate and the opposite substrate. The display medium is disposed between the pixel structure and the opposite substrate.

In an embodiment of the novel pixel structure and display panel of the present invention, The first distance and the second distance are less than or equal to 10 microns, respectively.

In an embodiment of the novel pixel structure and the display panel, there is a trench between the source and the drain, and the opening exposes the trench.

In an embodiment of the novel pixel structure and display panel of the present invention, the first signal line extends in the first direction. The second signal line extends in the second direction. The second direction intersects the first direction, and the extending direction of each strip opening is not perpendicular and is not parallel to the first direction and the second direction.

In an embodiment of the display panel of the present invention, the display panel further includes a black matrix layer. The black matrix layer is disposed on the opposite substrate and located between the display medium and the opposite substrate, wherein the black matrix layer shields the first signal line, the second signal line, and the active component of each pixel structure, and the black matrix layer has multiple Light transmission hole. The light transmission holes respectively expose one of the first electrodes.

In an embodiment of the display panel of the present invention, the display panel further includes a plurality of color filter patterns. The color filter pattern is disposed on the opposite substrate and between the display medium and the opposite substrate, wherein the color filter patterns are respectively disposed in one of the light transmission holes.

Based on the above, in the embodiment of the novel pixel structure of the present invention, the second electrode can be extended to the gate and the first signal line without changing the area of the gate. The magnitude of the electric field in the vicinity of the active device is reduced by controlling the magnitude of the first distance and the second distance. The smaller the electric field near the active element, the smaller the angle of rotation of the liquid crystal molecules, that is, the lower the degree of light leakage. Therefore, the pixel structure of the novel creation can improve the light leakage problem without greatly affecting the aperture ratio, and the above pixel structure is applied. The display panel can have good display quality (such as high aperture ratio and high contrast).

The above described features and advantages of the present invention will become more apparent and understood from the following description.

10‧‧‧ display panel

100‧‧‧ pixel structure

110‧‧‧First signal line

120‧‧‧second signal line

130‧‧‧Active components

140‧‧‧First electrode

150‧‧‧second electrode

160‧‧‧First insulation

170‧‧‧Second insulation

200‧‧‧ opposite substrate

300‧‧‧Display media

A‧‧‧ passage area

BM‧‧‧ black matrix layer

CF‧‧‧ color filter pattern

CH‧‧‧ channel layer

D1‧‧‧First distance

D2‧‧‧Second distance

DE‧‧‧汲

GE‧‧‧ gate

GI‧‧‧ brake insulation

O1‧‧‧ strip opening

O2‧‧‧ opening

O3‧‧‧Light hole

S1‧‧‧ first side

S2‧‧‧ second side

S110, SGE‧‧‧ side

SE‧‧‧ source

SUB‧‧‧ substrate

TH‧‧‧Tongkong

X1‧‧‧ first direction

X2‧‧‧ second direction

I-I’‧‧‧ cut line

1 is a cross-sectional view of a display panel in accordance with an embodiment of the present invention.

2 and 3 are top plan views of the pixel structure of Fig. 1, respectively.

4 is a top plan view of the display panel of FIG. 1.

1 is a cross-sectional view of a display panel in accordance with an embodiment of the present invention. 2 and 3 are top views of the pixel structure of FIG. 1, respectively, wherein FIG. 2 omits the film layer on the first electrode of FIG. 1 to clearly show the relative arrangement relationship between the active device and the first electrode. 4 is a top plan view of the display panel of FIG. 1, wherein the cross-section shown in FIG. 1 corresponds to the cross-sectional line I-I' of FIG. 4, but FIG. 4 omits the opposite substrate and the color filter pattern of FIG. The relative arrangement relationship of the black matrix layer, the first electrode, and the second electrode is clearly indicated.

Referring to FIGS. 1 through 4 , the display panel 10 includes a plurality of pixel structures 100 ( FIGS. 1 to 4 schematically illustrate one pixel structure 100 ), a counter substrate 200 , and a display medium 300 . The pixel structure 100 is disposed on the substrate SUB and can be arranged in two Dimension array. Each pixel structure 100 includes a first signal line 110, a second signal line 120, an active device 130, a first electrode 140, and a second electrode 150.

The second signal line 120 intersects the first signal line 110. Specifically, the first signal line 110 extends along the first direction X1, and the second signal line 120 extends along the second direction X2 that intersects the first direction X1. The second direction X2 and the first direction X1 may be perpendicular to each other, but are not limited thereto. The first signal line 110 can be a scan line, and the second signal line 120 can be a data line, but is not limited thereto.

The active component 130 is electrically connected to the first signal line 110 and the second signal line 120. The active component 130 includes a gate GE, a channel layer CH, a source SE, and a drain DE. Further, the active device 130 may further include a gate insulating layer GI.

The gate GE is electrically connected to the first signal line 110. For example, the gate GE is connected to a side of the first signal line 110 facing the first electrode 140. The gate insulating layer GI is disposed on the gate GE, the first signal line 110, and the substrate SUB exposed by the gate GE and the first signal line 110. The channel layer CH is disposed on the gate insulating layer GI and overlaps the gate GE. The source SE is electrically connected to the second signal line 120. For example, the source SE can be connected to a side of the second signal line 120 facing the first electrode 140.

The source SE and the drain DE overlap the channel layer CH and oppose each other such that the channel layer CH defines a channel region A between the source SE and the drain DE. For example, the source SE and the drain DE can be comb electrodes, respectively, and the zigzag trench between the source SE and the drain DE defines a tortuous channel region A in the channel layer CH. However, the shape of the source SE, the drain DE, and the channel region A may be changed as needed, and is not limited to those illustrated in FIG. 2. In an embodiment, the source SE and the drain DE They may be strip electrodes respectively, and there may be a straight strip-shaped trench between the source SE and the drain DE, and a straight strip-shaped channel region A is defined.

The first electrode 140 is electrically connected to the drain DE. The second electrode 150 is electrically insulated and overlaps the first electrode 140. Specifically, the pixel structure 100 may further include a first insulating layer 160 and a second insulating layer 170. The first insulating layer 160 covers the active device 130 and has a through hole TH. The through hole TH exposes a partial region of the drain DE, and the first electrode 140 is electrically connected to the drain DE through the through hole TH. The second insulating layer 170 is disposed on the first electrode 140 and the first insulating layer 160 exposed by the first electrode 140, and the second electrode 150 is disposed on the second insulating layer 170 to transmit electricity through the second insulating layer 170. The first electrode 140 is insulated.

The first electrode 140 and the second electrode 150 may both be transparent electrodes, such as electrodes made of metal oxide, to have a desired light transmittance. However, the materials of the first electrode 140 and the second electrode 150 are not limited thereto.

The second electrode 150 has a plurality of strip openings O1 and openings O2. The strip opening O1 overlaps with the first electrode 140. In the present embodiment, the extending direction of each strip opening O1 is not perpendicular and is not parallel to the first direction X1 and the second direction X2. However, the extending direction of each strip opening O1 may be changed as needed, and is not limited to those illustrated in FIG. In an embodiment, the extending direction of the strip openings O1 may be parallel or perpendicular to the first direction X1 or the second direction X2, respectively.

The opening O2 overlaps the active element 130. In addition, the opening O2 exposes the channel region A defined by the trench between the source SE and the drain DE, that is, the channel region A is not shielded by the second electrode 150 to allow the active device 130 to operate normally.

The opening O2 has a first side S1 and a second side S2. The first side S1 and the source SE are located on the same side of the gate GE. The second side S2 and the drain DE are located on the same side of the gate GE. In addition, the first side S1 and the second side S2 extend above the gate GE and the first signal line 110, respectively. a first distance D1 between the first side S1 and the first signal line 110 away from the side S110 of the gate GE and a second distance between the second side S2 and the side SGE of the gate GE away from the first signal line 110 D2 is greater than or equal to 3 microns, respectively. The first distance D1 is the shortest distance between the orthographic projection of the first side S1 on the substrate SUB and the orthographic projection of the side S110 on the substrate SUB. Further, the second distance D2 is the shortest distance between the orthographic projection of the second side S2 on the substrate SUB and the orthographic projection of the side edge SGE on the substrate SUB. In the present embodiment, the first distance D1 and the second distance D2 are respectively less than or equal to 10 microns, so that the opening O2 is exposed to the channel area A. However, the upper limit values of the first distance D1 and the second distance D2 may differ depending on the shape and area of the passage area A.

The opposite substrate 200 is opposed to the substrate SUB, and the pixel structure 100 is located between the substrate SUB and the opposite substrate 200. The display medium 300 is disposed between the pixel structure 100 and the opposite substrate 200. For example, display medium 300 is a liquid crystal layer and includes a plurality of liquid crystal molecules.

The display panel 10 may also include other film layers depending on different needs. For example, the display panel 10 may further include a Black Matrix BM to shield elements in the display panel 10 that are not to be seen. The black matrix layer BM is disposed on the opposite substrate 200 and between the display medium 300 and the opposite substrate 200. The black matrix layer BM shields, for example, the first signal line 110 and the second signal line of each pixel structure 100. 120 and the active component 130, and the black matrix layer BM has a plurality of light transmission holes O3 (FIG. 4 schematically illustrates a light transmission hole O3). The light-transmitting holes O3 expose one of the first electrodes 140, respectively.

In addition, the display panel 10 may further include a plurality of color filter patterns CF (one color filter pattern CF is schematically illustrated in FIG. 1) to provide a color display screen. The color filter pattern CF is disposed on the opposite substrate 200 and between the display medium 300 and the opposite substrate 200. The color filter patterns CF are respectively disposed in one of the light transmission holes O3.

When the gate GE is made of a light-shielding conductive material (such as metal), increasing the gate GE area reduces the aperture ratio. Therefore, in the embodiment, the method of adjusting the sizes of the first distance D1 and the second distance D2 is, for example, extending the second electrode 150 to the gate GE and the first signal line without changing the area of the gate GE. Above the 110. In this way, the magnitudes of the first distance D1 and the second distance D2 can be controlled without affecting the aperture ratio to reduce the magnitude of the electric field in the vicinity of the active device 130. Since the electric field near the active element 130 is smaller, the smaller the rotation angle of the liquid crystal molecules, that is, the lower the degree of light leakage. Therefore, the pixel structure 100 can improve the light leakage problem without affecting the aperture ratio. In general, when the rotation angle of the liquid crystal molecules is greater than 45 degrees, there is significant light leakage. In an experimental example, when the first distance D1 and the second distance D2 are respectively 4 μm, the rotation angle of the liquid crystal molecules may be 5 degrees or less. That is to say, controlling the sizes of the first distance D1 and the second distance D2 can effectively improve light leakage. Since the problem of improving the light leakage helps to improve the contrast of the display screen, the display panel 10 can have good display quality (such as high aperture ratio and high contrast). In one implementation In the example, the setting of the black matrix layer BM can even eliminate the light leakage problem.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the novel creation, and any person skilled in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.

10‧‧‧ display panel

100‧‧‧ pixel structure

110‧‧‧First signal line

130‧‧‧Active components

140‧‧‧First electrode

150‧‧‧second electrode

160‧‧‧First insulation

170‧‧‧Second insulation

200‧‧‧ opposite substrate

300‧‧‧Display media

A‧‧‧ passage area

BM‧‧‧ black matrix layer

CF‧‧‧ color filter pattern

CH‧‧‧ channel layer

D1‧‧‧First distance

D2‧‧‧Second distance

DE‧‧‧汲

GE‧‧‧ gate

GI‧‧‧ brake insulation

O1‧‧‧ strip opening

O2‧‧‧ opening

O3‧‧‧Light hole

S1‧‧‧ first side

S2‧‧‧ second side

S110, SGE‧‧‧ side

SE‧‧‧ source

SUB‧‧‧ substrate

TH‧‧‧Tongkong

X1‧‧‧ first direction

X2‧‧‧ second direction

Claims (10)

A pixel structure is disposed on a substrate, the pixel structure includes: a first signal line; a second signal line intersecting the first signal line; an active component electrically connected to the first signal line And the second signal line, wherein the active device includes a gate, a channel layer, a source, and a drain, the gate is electrically connected to the first signal line, and the channel layer is overlapped with the gate. The source is electrically connected to the second signal line, the source and the drain overlap the channel layer and are opposite to each other, so that the channel layer defines a channel region between the source and the drain a first electrode electrically connected to the drain; and a second electrode electrically insulated and overlapping the first electrode, wherein the second electrode has a plurality of strip openings and an opening, the strips The opening is overlapped with the first electrode, the opening is overlapped with the active element and has a first side and a second side, the first side and the source are located on the same side of the gate, the second side and The drain is located on the same side of the gate, wherein the opening exposes the The first side and the second side are respectively located above the gate, and a first distance between the first side and a side of the first signal line away from the gate and the second side are A second distance between the side of the gate remote from the first signal line is greater than or equal to 3 microns. The pixel structure of claim 1, wherein the first distance and the second distance are less than or equal to 10 micrometers, respectively. The pixel structure of claim 1, wherein the source and the drain have a trench, and the opening exposes the trench. The pixel structure of claim 1, wherein the first signal line extends along a first direction, the second signal line extends along a second direction, and the second direction intersects the first direction. And extending directions of the strip openings are not perpendicular and are not parallel to the first direction and the second direction. A display panel comprising: a plurality of pixel structures as claimed in claim 1 and disposed on the substrate; a pair of substrates opposite to the substrate, wherein the pixel structures are located on the substrate and the opposite substrate And a display medium disposed between the pixel structures and the opposite substrate. The display panel of claim 5, wherein the first distance and the second distance are less than or equal to 10 micrometers, respectively. The display panel of claim 5, wherein the source and the drain have a trench, and the opening exposes the trench. The display panel of claim 5, wherein the first signal line extends along a first direction, the second signal line extends along a second direction, the second direction intersects the first direction, and The extending direction of each of the strip openings is not perpendicular and is not parallel to the first direction and the second direction. The display panel of claim 5, further comprising a black matrix layer disposed on the opposite substrate and located between the display medium and the opposite substrate, wherein the black matrix layer is shielded The first signal line, the second signal line and the active component of the pixel structure, and the black matrix layer has a plurality of light transmission holes, wherein the light transmission holes respectively expose one of the first electrodes. The display panel of claim 9, further comprising a plurality of color filter patterns disposed on the opposite substrate and between the display medium and the opposite substrate, wherein the display panel The color filter patterns are respectively disposed in one of the light transmission holes.