TWM468771U - Substrate inspection device - Google Patents

Description

Substrate inspection device

The present invention relates to a substrate inspection apparatus for inspecting a processing state applied to a surface of a substrate.

For example, in the lithography process in the manufacture of a semiconductor device, for example, a photoresist liquid is applied onto a semiconductor wafer (hereinafter referred to as a "wafer"), and a photoresist coating process for forming a photoresist film is sequentially performed, and a predetermined pattern is formed. Exposure treatment for exposure, development processing for developing the exposed photoresist film, and the like. And, a pattern of predetermined photoresist is formed on the wafer.

Further, as described above, the wafer subjected to the lithography process is subjected to inspection of the surface state of the substrate after the inspection by the inspection apparatus, that is, film thickness inspection of the coating film or macroscopic defect inspection of the surface. In this case, for example, whether or not a film thickness of a predetermined photoresist film is formed on the surface of the wafer, whether the film thickness in the substrate surface is uniform, or whether or not damage or foreign matter adheres to the film is adhered.

Such a large number of defect inspections are performed on the inspection apparatus, for example, by moving the stage on which the wafer is placed, and the irradiation unit passes the half mirror to irradiate the wafer on the mounting stage, and the semi-lens is used to cause the defect inspection. The reflected light of the wafer is reflected, for example, by the photographic device of the CCD line sensor. Further, the image is subjected to image processing and judged whether or not there is a defect (for example, refer to Patent Document 1).

In addition, the film thickness detector which measures the film thickness of the coating film is inspected, for example, whether the film thickness of the substrate subjected to the photoresist treatment is the target film thickness to be set, the state of variation in the surface, and the like. In the case where the film thickness is measured, the film thickness is measured using the test substrate, and when the measured value is within the allowable range of the target value, the coating substrate is subjected to a predetermined coating process by the coating device. In the case where the measured value deviates from the allowable range, it is generally known to perform a desired correction on the coating device (for example, refer to Patent Document 2).

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-240519

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2001-196298

[New summary]

However, in recent years, in particular, in the pattern forming program, for example, in the pattern forming process, a single image development process and an exposure process are performed on one substrate, and a double patterning technique for pattern formation is performed (one for each). The circuit pattern is divided into two low-density patterns and exposed Technology). In the process of continuously performing such miniaturization, the surface state of the substrate is inspected, and the failure of the processing state is confirmed, and the throughput is not required to be lowered, and continuous inspection is performed. In such a case, it is necessary to mount the inspection device at any position of the coating developing device.

In addition, in response to such a miniaturization device, in addition to checking the processing state of the substrate in production, if the type of the processed wafer is changed, the processing liquid is also changed, and therefore it is necessary to combine the film thickness exceeding the optimum film thickness. The coating conditions of the values (for example, the number of rotations, the amount of discharge, the amount of exhaust gas, the temperature, etc.), and the thickness of the set conditions are also checked to change the conditions inside the coating developing device, and the device is continuously improved. The requirements for the operation time.

Conventionally, in order to reduce the influence degree on the occupied area of the size of the clean room, the coating developing device is required to reduce the bottom area of the entire coating and developing device. Moreover, in order to improve the productivity at the same time, if the processing unit is mounted at a high density and high load and equipped with various plurals, the number of processed sheets per hour cannot be responded to. However, since the type of the conventional inspection is different from the execution timing of the inspection, the inspection apparatuses for inspecting the surface state of the substrate are also provided at different positions.

In view of the above-mentioned viewpoints, the inspection unit that inspects different surfaces is integrated and installed in the casing, and the processing unit mounted on the substrate of the entire image forming apparatus is increased by not reducing the function of the inspection. In order to increase the productivity of substrate processing.

In order to achieve the above object, a substrate inspection apparatus according to the present invention includes: a holding portion that holds a substrate; a rotation driving unit that rotates a substrate held by the holding portion; and a moving mechanism that moves the holding portion in a horizontal direction In the receiving position, the substrate is received between the housing accommodating the holding portion and the outside of the housing; and the probe is used for measuring the film thickness of the coating film formed on the substrate; The imaging unit images the surface of the substrate held by the holding unit; the direction changing unit irradiates light onto the surface of the substrate held by the holding unit, and sets the direction of the optical path of the light reflected in the vertical direction to the horizontal direction. The aforementioned imaging unit in the direction reflects light.

By using such a configuration, it is possible to use the position of the surface of the substrate to be measured and the position of the probe position for measuring the film thickness so as to be arbitrarily set so as to extend the horizontal direction except for the vertical direction. The range of movement in the direction of the movement of the direction and the free rotation is set as the range of movement of the substrate, and the direction changing portion of the angle of the light reflected by the substrate perpendicularly is changed to the imaging portion of the inspection instrument of the substrate. Use together.

In the substrate inspection apparatus of the present invention, the imaging unit is provided at a position facing one side of the receiving position, and the direction converting unit is preferably disposed at a position between the imaging unit and the receiving position.

With such a configuration, when the substrate is transferred, the interference at the position where the film thickness inspection is performed is avoided, and the image pickup portion is provided on the side opposite to the receiving position of the substrate, so that the particle can be placed on the substrate at the surface inspection position. On the surface.

In the substrate inspection device of the present invention, the direction conversion unit has a length equal to at least the diameter of the substrate, and the first light irradiation unit and the second light that collectively emit light with the length are provided in the vicinity of the direction conversion unit. The illuminating unit is preferred. Further, it is preferable that one of the first light-irradiating portion and the second light-irradiating portion has a filter that removes light of a wavelength at which the photoresist is photosensitive.

With such a configuration, linear light can be applied to the surface of the substrate in the vicinity of the direction changing portion of the reflected light, so that high-precision reflection can be returned to the imaging inspection.

In the substrate inspection apparatus of the present invention, the detection result of the position detecting sensor and the position detecting sensor based on the position of the end portion of the detecting substrate is rotated while the substrate held by the holding portion is rotated, and the substrate is detected by the substrate. It is preferable to control the center position of the substrate, measure the position of the notch of the substrate, and adjust the position of the substrate to control the rotation drive unit and the control unit of the moving mechanism. In this case, a plurality of measurement positions of the substrate surface are set on the substrate adjusted by the control unit at the position of the substrate, and the control unit aligns the measurement position of the probe to move the measurement position of the plurality of substrates. It is preferable that the mechanism moves in the horizontal direction and the substrate is rotated and measured.

With such a configuration, the control unit can accurately recognize the center position of the substrate and the eccentricity of the substrate, and can accurately align the set film thickness measurement position and the relative position of the probe. It is possible to make the direction of the substrate and the position of the notch by performing the surface inspection Thus, alignment can be performed in the substrate to be measured. In this case, in order to measure the set position of the plurality of substrates, the control unit adjusts the measurement position of the substrate surface of the substrate position, and the control unit aligns the measurement position of the probe by the moving mechanism. The direction is moved and the substrate is rotated and measured, and the measurement can be performed even if a plurality of film thickness measurement positions are set at any position.

In the substrate inspection apparatus of the present invention, the probe is disposed inside the casing, and the system of the film thickness detector connected to the probe is disposed outside the casing.

With such a configuration, in the processing unit laminated in the high density, the probe is installed in the substrate inspection device, but the film thickness inspection device can be exposed to the outside and incorporated into the device. In the invalid cavity.

In the substrate inspection device of the present invention, the housing has a position for aligning the inside of the housing at a position facing the opening and closing port for accommodating the substrate at the receiving position and opening and closing the loading/unloading port. The exhaust of the gas is optimal.

With such a configuration, the particles can be quickly discharged, and particles adhering to the particles of the image pickup device or the inside of the casing can be suppressed.

According to the present invention, by integrating the film thickness inspection device and the surface inspection device, it is possible to increase the number of processing units for performing various processes. The limited mounting space of the unit can further improve the productivity of the substrate processing of the coating development device.

42‧‧‧Substrate inspection device

110‧‧‧Processing container (housing)

111‧‧‧ Moving into the exit

112‧‧‧Switch gate

119‧‧‧Mobile agencies

120‧‧‧ Keeping Department

121‧‧‧Rotary drive department

130‧‧‧ Position Detection Sensor

145a, 145b‧‧‧Exhaust Department

146a, 146b‧‧‧ exhaust fan

150‧‧‧Photography Department

152‧‧‧1st Light Irradiation Department

151‧‧‧ film thickness detector

154‧‧‧Mirror

155‧‧‧2nd Light Irradiation Department

156‧‧‧ probe

157‧‧‧ Directional Conversion Department

159‧‧‧ film thickness detector

200‧‧‧Control Department

P1‧‧‧Receiving location

P2‧‧‧ alignment position

W‧‧‧ wafer

FIG. 1 is a schematic plan view showing an internal configuration of a coating development processing system including a wafer processing apparatus to which the substrate inspection apparatus of the present invention is applied.

Fig. 2 is a schematic side view showing the internal structure of a coating development processing system.

Fig. 3 is a schematic plan view of a substrate inspecting apparatus of the present invention.

Fig. 4 is a schematic side view of a substrate inspecting apparatus of the present invention.

Fig. 5 is a plan view showing the arrangement of a moving mechanism of a substrate in the present invention.

Fig. 6 is a schematic side view showing a relationship between a substrate inspecting apparatus and a control unit according to the present invention.

Fig. 7 is a schematic plan view showing a state in which a conveying device holds a substrate.

Fig. 8 is a schematic side view showing a state of surface inspection of the present invention.

FIG. 9 is a schematic side view showing a state in which a substrate is loaded and positioned.

FIG. 10 is a schematic plan view showing a state in which a film thickness inspection is performed.

FIG. 11 is a schematic side view showing a state in which a film thickness inspection is performed.

Hereinafter, embodiments of the present invention will be described. Here, a case where a coating development processing system including a wafer processing apparatus of the substrate processing apparatus according to the present embodiment is applied will be described.

As shown in FIG. 1 , the coating development processing system 1 has an integrated structure, and the configuration includes a cassette station 2, for example, between the outside, loading and unloading a cassette C for accommodating a plurality of wafers W; The processing station 3 includes various processing devices for performing a predetermined process on a slice-by-chip basis in the lithography process, and the interface station 5 performs the wafer W between the exposure devices 4 adjacent to the processing station 3.

The cassette station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line and are disposed in the X direction in the horizontal direction (the upper and lower directions in FIG. 1). In the cassette mounting plate 11 described above, the cassette C can be placed on the outside of the coating development processing system 1 when the cassette C is carried in and out.

In the cassette station 2, as shown in FIG. 1, a wafer transfer device 21 that can move freely on the transport path 20 extending in the X direction is provided. The wafer transfer device 21 is also freely movable in the vertical direction and around the vertical axis (theta direction), and can be carried out on the cassette C on each of the cassette mounting plates 11 and the third block G3 of the processing station 3 which will be described later. The wafer W is transferred between the devices.

The processing station 3 is provided with a plurality of blocks, for example, four blocks G1, G2, G3, and G4, which are provided with various devices. For example, the first block G1 is provided on the front side of the processing station 3 (the negative side in the X direction of FIG. 1), and the second block is provided on the back side of the processing station 3 (the positive side in the X direction of FIG. 1). Piece G2. Further, on the side of the card station 2 of the processing station 3 (the negative side in the Y direction of Fig. 1), the third block G3 is provided, and on the side of the interface station 5 of the processing station 3 (the positive direction side in the Y direction of Fig. 1) , the fourth block G4 is set.

For example, in the first block G1, as shown in FIG. 2, a plurality of liquid processing apparatuses, for example, a developing device (DEV) 30 that performs development processing on the wafer W, and an anti-reflection film (hereinafter referred to as a "lower reflection preventing film") a lower anti-reflection film forming device (BCT) 31 formed on the lower layer of the photoresist film of the wafer W, a photoresist device for applying a photoresist to the wafer W, and forming a photoresist film as a coating film (COT) 32. The anti-reflection film (hereinafter referred to as "upper reflection preventing film") is formed on the upper surface of the photoresist film of the wafer W. The upper portion of the anti-reflection film forming device (TCT) 33 is stacked in four layers from the bottom.

For example, each of the devices 30 to 33 of the first block G1 has a plurality of cups F for accommodating the wafer W in the horizontal direction, and can process the plurality of wafers W in parallel.

For example, in the second block G2, as shown in FIG. 1, a heat treatment unit group including a heat treatment device that performs heat treatment of the wafer W is disposed on the side opposite to the liquid processing device and the transfer device. The heat treatment apparatus 40 has a hot plate on which the wafer W is placed and heated, and a cooling plate on which the wafer W is placed and cooled, and both heat treatment and cooling treatment can be performed. The number or arrangement of the heat treatment device 40 and the substrate inspection device 42 can be arbitrarily selected. In addition, the detailed configuration regarding the substrate inspection device 42 will be described later.

For example, in the third block G3, plural numbers are sequentially arranged from the bottom Receiving devices 50, 51, 52, 53, 54, 55, 56. Further, in the fourth block G4, a plurality of receiving devices 60, 61, 62 are provided in order from the bottom. Here, the substrate inspection device 42 capable of inspecting the defects of the wafer W that have been subjected to the coating process and the defects of the wafer W that have been subjected to the development process is provided, for example, at the uppermost layer of the third block G3. Further, the substrate inspection device 42 may be provided on the uppermost layer of the fourth block G.

As shown in FIG. 1, a wafer transfer region D is formed in a region surrounded by the blocks G1 to G4 of the first block G1 to the fourth block. For example, the wafer transfer device 70 is disposed in the wafer transfer device D.

The wafer transfer device 70 has a transfer arm that is freely movable in the Y direction, the X direction, the θ direction, and the vertical direction. The wafer transfer device 70 moves in the wafer transfer region D and can transport the wafer W to the surrounding first block G1, second block G2, third block G3, and fourth block G4. Scheduled device.

For example, as shown in FIG. 2, the wafer transfer apparatus 70 is provided with a plurality of stages arranged at the upper and lower sides, for example, a predetermined apparatus capable of transporting the wafer W to the same level as each of the blocks G1 to G4.

Further, in the wafer transfer region D, a shuttle transport device 80 that linearly transports the wafer W is provided between the third block G3 and the fourth block G4.

The shuttle transport device 80 is, for example, freely movable linearly in the Y direction. The shuttle transport device 80 moves in the Y direction while supporting the wafer W, and can transport the wafer W between the receiving device 52 of the third block G3 and the receiving device 62 of the fourth block G4.

As shown in FIG. 1, a wafer transfer device 90 is provided beside the positive side of the X-direction of the third block G3. The wafer transfer device 90 has, for example, a transfer arm that is freely movable in the X direction, the θ direction, and the vertical direction. The wafer transfer device 90 moves up and down while supporting the wafer W, and can transport the wafer W to each of the receiving devices 50 to 56 in the third block G3.

The wafer transfer device 100 and the transfer device 101 are provided in the interface station 5. The wafer transfer apparatus 100 has, for example, a transfer arm that is freely movable in the Y direction, the θ direction, and the vertical direction. The wafer transfer apparatus 100 supports, for example, the wafer W on the transfer arm, and can transport the wafer W to each of the delivery devices 60 to 62 and the delivery device 101 in the fourth block G4.

Next, the configuration of the substrate inspection device 42 described above will be described. The substrate inspection device 42 is configured, for example, by a housing that is inserted into the uppermost shelf of G3 of FIG. 2, and has a processing container 110 that is a casing as shown in FIGS. 4 and 5. One of the two side faces of the wafer transfer region facing the longitudinal direction of the processing container 110 in the X direction of FIG. 4 and FIG. 5 is formed with a carry-in port 111 for loading and unloading the wafer W, and the other is provided with a later-described port. Imaging device 150. Further, a switch gate 112 is provided at the carry-in port 111.

Inside the processing container 110, a holding portion 120 that sucks and holds the wafer W, that is, a holding portion 120 is provided. The holding portion 120 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W is provided on the upper surface, for example, and is configured to be rotatable in the horizontal direction by the rotation driving portion 121 of the suction cup motor. With the attraction from the attraction, it will be able to The wafer W is adsorbed and held on the holding portion 120.

FIG. 5 is a description of the moving mechanism 119 that freely moves the holding portion 120 in the horizontal direction. The moving mechanism 119 includes a Y-driven ball screw 129 and a Y-axis motor 128 that allow the holding portion mounting table 127 and the holding portion 120 to freely move in the width direction of the processing container 110 (the Y direction side in FIG. 5). Further, the holding portion mounting table 127 is provided with sliding portions 125a and 125b at both ends of the holding portion mounting table 127 so as to be freely movable in the X direction of the processing container 110. At this time, the sliding portion 125a is slidably fitted to the linear motion guide 122 extending in the X direction, and the sliding portion 125b is driven by the X-drive ball screw 124 in parallel with the linear motion guide 122. The drive of the X-axis motor 126 of the drive source is configured to freely move in the positive and negative X directions. Thereby, the holding portion 120 can be horizontally moved in the rotation direction, the advancing and retracting direction, and the horizontal direction, so that the wafer W can be freely moved in the secondary element. These are all referred to as the moving mechanism 119.

In the processing container 110, the exhaust portions 145a and 145b for exhausting the internal environment are provided on both sides of the switch gate 112 and the opposite side of the loading and exiting port 111 of the wafer W, in each of the exhaust portions 145a, 145b. Exhaust fans 146a, 146b are attached to each of them, and are exhausted by exhaust fans 146a, 146b.

Further, when the wafer W is received between the outside of the processing container 110 at the receiving position P1, as shown in FIG. 6, the holding portion 120 does not mutually interact with the wafer transfer device 70 provided outside the substrate inspection device 42. put one's oar in. Here, as shown in FIG. 7, the wafer transfer apparatus 70 has, for example, an arm portion 70a which is slightly larger than the diameter of the wafer W and has a substantially C-shape. In the arm The inner side of the 70a is protruded toward the inner side, and the support portion 70b that supports the outer peripheral portion of the wafer W is provided at a plurality of positions, for example, three positions. The holding portion 120 has a diameter smaller than the diameter of the wafer W, and adsorbs and holds the center portion of the wafer W. Therefore, the holding portion 120 does not interfere with the wafer transfer device 70.

The position detecting sensor 130 that detects the position of the peripheral portion of the wafer W held by the holding portion 120 is provided inside the processing container 110 and at the alignment position P2. The position detecting sensor 130 has, for example, a CCD camera (not shown) for detecting the amount of eccentricity of the wafer W held by the holding portion 120 or the position of the notch portion of the wafer W. Further, the control unit 200 calculates and memorizes the center position of the substrate based on the eccentricity of the wafer W. Further, the position detecting sensor 130 detects the position of the notch portion, and the driving portion 121 rotates the holding portion 120 to memorize the position of the notch portion of the wafer W.

An imaging unit 150 that images the wafer W held by the holding unit 120 is provided inside the processing container 110 as shown in FIG. 6 . The imaging unit 150 is provided at the end in the positive direction of the X direction of the processing container 110, and the inspection unit 151 which is the main body of the surface inspection apparatus is provided at a position where the free space of the application developing device outside the processing container 110 is effectively used. The imaging unit 150 is, for example, a CCD camera. Further, the imaging unit 150 outputs an image captured by the imaging unit 150, and an inspection unit 151 that inspects a surface defect of the wafer W is provided based on the image.

Between the inside of the processing container 110 and the intermediate position between the receiving position P1 and the aligned position P2, having the same diameter as the wafer W or The two illuminations of the first light irradiation unit 152 and the second light irradiation unit 155 that illuminate the surface of the wafer W are arranged in parallel for a long length. In either of the first light irradiation unit 152 and the second light irradiation unit 155, the filter removes light of a wavelength at which the photoresist is photosensitive, and the photosensitive photoresist is not exposed to light and is inspected. For example, in the present invention, a filter (not shown) is incorporated in the second light irradiation unit 155. Since the first light irradiation unit 152 inspects the surface of the wafer W after the development process is completed, the filter is not placed inside. Further, when any one of the first and second light irradiation units 152 and 155 is selected, the type of the coating film may be light of the same wavelength.

The first and second light irradiation units 152 and 155 are provided between the wafer W held by the holding unit 120 and the imaging unit 150, and are provided with a direction L in which the optical path formed by the reflected light of the light irradiated on the wafer W is changed. Direction conversion unit 157. Moreover, the direction changing unit 157 including the first and second light irradiation units 152 and 155 is fixed to the processing container 110 by, for example, the support member 153.

The direction changing unit 157 has a mirror 154 as shown in FIG. 8 . The mirror 154 is provided below the first and second light irradiation units 152 and 155. The mirror 154 is, for example, a semi-lens, and is disposed at an angle of 45 degrees in the horizontal direction. Further, the illumination from the first and second light irradiation units 152 and 155 is reflected by the mirror 154 and irradiated in the vertical direction downward on the wafer W. Further, the light reflected from the wafer W in the vertical direction is reflected by the mirror 154 and is performed in the horizontal direction in the X direction of FIG.

In the coating development processing system 1, as shown in FIG. Control unit 200. The control unit 200 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores the number of sampling points of the film thickness in the substrate inspection device 42, the setting of the coordinates in the substrate surface, and the program for processing the film thickness inspection of the wafer W.

The relationship between the control unit 200 and the substrate inspection device 42 is shown in Fig. 6 . The control unit 200 reads the signal obtained by the position detecting sensor 130, and calculates and stores the substrate information. By the calculation information, the operation of the X-axis motor 126, the Y-axis motor 128, and the rotation drive unit 121 of the moving mechanism 119 constituting the wafer W is controlled by the processing method set in the control unit 200. Further, the control unit 200 is connected to the film thickness detector body 159 that connects the probe 156 for measuring the film thickness to the inspection portion 151 which is the body of the surface inspection device.

Next, a description will be given of a method of processing the wafer W by using the coating development processing system 1 configured as described above.

First, the cassette C of the wafer W for testing a plurality of sheets is placed on a predetermined cassette mounting plate 11 of the cassette station 2. Then, each wafer W in the cassette C is sequentially taken out by the wafer transfer device 21, and transported to, for example, the receiving device 53 of the third block G3 of the processing station 3.

Next, the wafer W is transported to the heat treatment apparatus 40 of the second block G2 by the wafer transfer apparatus 70, and temperature adjustment is performed. Then, the wafer W is transferred to the photoresist film forming apparatus 32 of the first block G1 by the wafer transfer apparatus 70, and a photoresist film is formed on the wafer W. Then, the wafer W is transported to the heat treatment device 40 of the second block G2, and is heated and temperature-controlled, and then returned to the third block G3. 53.

Next, the substrate inspection device 42 disposed at the uppermost layer of the third block G3 transfers the substrate through the wafer transfer device 90. The substrate inspection device 42 opens the switch gate 112, and holds and holds the wafer W in the holding portion 120 that is waiting at the receiving position. The substrate holding unit 120 moves the wafer W to the position detecting sensor 130 provided at the position of the alignment position P2 by the moving mechanism 119. Next, while the holding portion 120 is rotated, the peripheral portion of the wafer W is imaged and the center position of the wafer W is calculated, and the position of the notch N is detected.

Next, the wafer W is returned to the position of the receiving position P1, and the film thickness of the applied photoresist is measured using the probe 156. For example, Fig. 10 is a diagram showing an example of the measurement. Fig. 10(a) shows a direction changing unit 157, and a probe 156 for measuring a film thickness is provided in the vicinity of the center thereof, and the position of the notch of the wafer W is aligned with the X-axis direction, and the probe 156 is moved to A map of the measurement position at which the measurement was first performed. An example in which the wafer W is cross-measured is shown in FIGS. 10(a) to (f).

First, by the moving mechanism 119, the holding portion 120 is moved to the set predetermined position by the holding portion mounting table 127, and the notch position is simultaneously aligned. Initially, the film thickness of the center of the wafer W from the position of the notch of the wafer W was measured at a position away from the radial direction of 90°. Next, as shown in FIG. 10(b), the position at which the wafer W was rotated by 90 was measured. Next, as shown in FIG. 10(c), the wafer W was rotated again by 90° and measured. Similarly, as shown in FIG. 10(d), the measurement was performed by rotating again by 90 degrees. Finally, as shown in Figure 10(e), the center of the wafer W is advanced. Line measurement. As described above, by controlling the moving mechanism 119, the cross measurement can be performed as shown in (f). When the measurement point is increased, the measurement position can be increased in this operation.

Next, the wafer W after the measurement is carried out by the substrate measuring device 42 and returned to the cassette C or other empty cassette C carried out by the cassette station 2. In this way, only the film thickness measurement in the test wafer W is completed. In addition, it is possible to perform surface inspection on the application state of the application spot such as the application of the wafer W, and the description of the wafer W after development will be described in detail later.

Next, the surface inspection of the wafer W on which the development processing is completed will be described. First, the cassette C of the wafer W for accommodating a plurality of products is placed on a predetermined cassette mounting plate 11 of the cassette station 2. Then, each wafer W in the cassette C is sequentially taken out by the wafer transfer device 21, and transported to, for example, the receiving device 53 of the third block G3 of the processing station 3.

Next, the wafer W is transported to the heat treatment apparatus 40 of the second block G2 by the wafer transfer apparatus 70, and temperature adjustment is performed. Then, the wafer W is transferred to the photoresist film forming apparatus 32 of the first block G1 by the wafer transfer apparatus 70, and a photoresist film is formed on the wafer W. Then, the wafer W is transported to the heat treatment apparatus 40 of the second block G2, and is heated and temperature-controlled, and then returned to the receiving device 53 of the third block G3.

Next, the wafer W is transported to the receiving device 54 of the third block G3 in the same manner by the wafer transfer device 90. Then, the wafer W is transferred to the second block G2 by the wafer transfer device 70. The device is placed and adhered. Then, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70, and temperature adjustment is performed.

Then, the wafer W is transferred to the photoresist applying device 32 by the wafer transfer device 70, and the photoresist is applied onto the rotating wafer W to form a photoresist film on the wafer W. Then, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70 and pre-baked. Then, the wafer W is transported to the receiving device 55 of the third block G3 by the wafer transfer device 70.

Next, the wafer W is transferred to the upper anti-reflection film forming device 33 by the wafer transfer device 70, and an upper anti-reflection film is formed on the wafer W. Then, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70 to perform heating and temperature adjustment.

Then, the wafer W is transported to the exposure apparatus 4 by the wafer transfer apparatus 100 of the interface station 5, and exposure processing is performed.

Next, the wafer W is transported by the exposure device 4 to the receiving device 60 of the fourth block G4 by the wafer transfer device 100. Then, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70, and subjected to post-exposure baking processing. Then, the wafer W is transported to the developing device 30 by the wafer transfer device 70 and developed. After the development is completed, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70 and subjected to post-baking treatment.

Then, the wafer W that has finished the development process is transported to the transfer device 50 of the third block G3 by the wafer transfer device 70, and is carried into the substrate inspection device 42 by the wafer transfer device 90. After moving in, the aforementioned crystal The alignment of the circle W is performed by the position detecting sensor 130 and the control unit 200. The position detecting sensor 130 detects the amount of eccentricity from the center of the wafer W held by the holding portion 120, and obtains the center position based on the eccentric amount of the wafer W, thereby adjusting the notch portion of the wafer W. And position the wafer W at a predetermined position.

Then, in a state where the position P2 is aligned, the moving mechanism 119 is moved, for example, the position of the notch is correctly passed through the position of the center of the direction changing portion 157. It is necessary to easily judge the deviation of the surface inspection information by aligning the position of the notch of the inspection wafer W with a predetermined position.

Next, the moving mechanism 119 is moved from the aligned position P2 to the receiving position P1 side at a predetermined speed. When the wafer W passes under the mirror 154, the wafer W is illuminated by the first light irradiation unit 152. The reflected light on the wafer W caused by the illumination travels along the mirror 154 and the optical path L as described above, and is imaged by the imaging unit 150. Further, the wafer W is imaged by the imaging unit 150. The image of the imaged wafer W is output by the inspection unit 151, and the inspection unit 151 checks the defect of the wafer W based on the output image.

Then, as shown in FIG. 11, the wafer W held by the holding portion 120 is received into the wafer transfer device 90. Next, the wafer W is carried out by the substrate inspection device 42 through the carry-in port 111. The wafer W that has been measured passes through the wafer transfer device 21, and returns to the cassette C or other empty cassette C that has been carried out by the cassette station 2. In this way, the surface inspection of the wafer W for production is completed.

In addition, it is also possible to perform film on each of the test wafers W. Thick measurement and surface inspection. The above-described production wafer W is carried into the surface inspection device 42 and subjected to the same inspection as the surface inspection step, except that the wavelength of the illumination at the time of surface inspection is changed. The test wafer W is a photosensitive liquid film coated with a photoresist or the like in a state in which the film thickness inspection is performed, and in order to minimize the influence on the surface inspection, it is preferable to eliminate the wavelength which affects the photosensitive effect. . Therefore, the illumination system for performing the surface inspection of the test wafer W can utilize the second light illumination unit 155 described in FIG. 11(a).

According to the above embodiment, by incorporating the film thickness inspection device and the surface inspection device, it is possible to increase the space allocated to the processing unit in the coating development device, and the film thickness inspection device is a test for the condition for setting the program. The thickness of the test wafer W for the film formation treatment of the treatment liquid is measured, and the surface inspection apparatus checks the surface inspection after the pattern formation processing of the production wafer W. In addition, it is possible to perform surface inspection which cannot be achieved in the film thickness inspection of the conventional test wafer W. Therefore, it is possible to estimate the cause of defects such as the discharge state or the nozzle contamination state by the inspection result of the surface.

Further, in the above embodiment, the height of the substrate inspection device 42 can be suppressed by providing the film thickness detector body 159 in a free space in the application developing device outside the substrate inspection device 42. Thereby, the number of mountings of other processing units can be increased. Further, even if the moving mechanism 119 is placed inside, the height of the substrate inspection device 42 is suppressed to have an exhaust portion for exhausting the inside. Therefore, particles that have an influence on the inspection can be quickly discharged. Thereby, the film thickness inspection and surface inspection are improved. reliability.

The embodiments of the present invention have been described above with reference to the attached drawings, but the present invention is not limited to such examples. The present invention is also applicable to the case where the substrate is an FPD (flat panel display) other than a wafer, or another substrate such as a mask reticle for a photomask.

42‧‧‧Substrate inspection device

110‧‧‧Processing container (housing)

120‧‧‧ Keeping Department

111‧‧‧ Moving into the exit

112‧‧‧Switch gate

130‧‧‧ Position Detection Sensor

145a, 145b‧‧ venting department

146a, 146b‧‧‧ exhaust fan

150‧‧‧Photography Department

151‧‧‧ film thickness detector

152‧‧‧1st Light Irradiation Department

154‧‧‧Mirror

155‧‧‧2nd Light Irradiation Department

156‧‧‧ probe

157‧‧‧ Directional Conversion Department

P1‧‧‧Receiving location

P2‧‧‧ alignment position

W‧‧‧ wafer

D‧‧‧ wafer transfer device

L‧‧‧Light Road

Claims (8)

A substrate inspection apparatus comprising: a holding portion that holds a substrate; a rotation driving unit that rotates a substrate held by the holding portion; and a moving mechanism that moves the holding portion to a second element in a horizontal direction; The substrate is received between the housing accommodating the holding portion and the outside of the housing; the probe is for measuring the film thickness of the coating film formed on the substrate; and the imaging unit is held by the holding The surface of the substrate is imaged; the direction changing portion irradiates light onto the surface of the substrate held by the holding portion, and directs the direction of the optical path of the light reflected in the vertical direction toward the imaging portion provided in the horizontal direction to light reflection. The substrate inspection device according to claim 1, wherein the imaging unit is disposed at a position facing one side of the receiving position, and the direction changing unit is disposed at a position between the imaging unit and the receiving position. good. The substrate inspection device according to claim 1 or 2, wherein the direction conversion unit includes a first light irradiation unit that has a length equal to at least a diameter of the substrate, and the light is collectively irradiated with the length in the vicinity of the direction conversion unit. And the second light irradiation unit. The substrate inspection apparatus according to claim 3, wherein the first light irradiation unit and the second light irradiation unit are provided with a filter that removes light of a wavelength at which the photoresist is photosensitive. The substrate inspection apparatus according to claim 1, further comprising: a position detecting sensor that detects a position of the end portion of the substrate while rotating the substrate held by the holding portion; and a control unit that detects the sensor according to the position As a result of the detection, the center position of the substrate is calculated from the eccentric amount of the substrate, and the position of the notch of the substrate is detected. Then, the position of the substrate is adjusted, and the rotation driving unit and the moving mechanism are controlled. The substrate inspection apparatus according to claim 5, wherein the substrate adjusted by the control unit at the position of the substrate is provided with a plurality of measurement positions of the substrate surface, and the control unit is aligned to measure the plurality of set positions. The measurement position of the probe is such that the moving mechanism moves in the horizontal direction and the substrate is rotated and measured. The substrate inspection apparatus according to claim 1, wherein the probe is disposed inside the casing, and the system of the film thickness detector connected to the probe is disposed outside the casing. The substrate inspection device according to claim 1 or 2, wherein the casing has a pair of housings at a position opposed to a loading and closing port for accommodating the substrate at the receiving position and a switching gate for opening and closing the loading port. An exhaust portion for exhausting inside.