M330563 八、新型說明： 【新型所屬之技術領域】 本新型係有關於-種太陽能電池元件，其特別有關於—種具 有以金屬誘發之低溫多晶矽薄膜之太陽能電池元件結構，可以 效地提高其光電轉換效率。 【先前技術】 自-十世紀延燒到二十-世紀，全球能源危機的陰影— 直徘彻不去，潛藏在生活中隨時都有可能爆發。在京都議定 書生$後，全球致力於各種替代能源的研發與開創，其中又 以太陽能為新能源開發利用最活躍的領域。據估計，莓年由 太陽照射騎球表面的能量約為地球上所有人料消耗的— 百萬倍1，若能充分利用百分之一的太陽能，並以1〇%的 轉換率使其轉換為電能，即可滿足我們的需求。 太陽能電池（s—eells)的發展，最早可追溯自1954年由 Bdl實驗室所發明出來的。#時研發的動機是希望能提供偏 ，地區供電系統的能源，那時太陽能電池的效率只有⑽。接 著從I957年蘇聯發射第-顆人造衛星開始，—直朗的年美 國太空人登陸月球，太陽能電池的應料說是充分發揮，人 類發展太陽能電池的最終目標，就是希望能取代目前傳統的 能源。 我們都知道太陽的能量是取之不盡用之不竭，從太 出來的能量’換算成電力約3.8xl〇23kw;此太陽能 的總置如以距離太陽—億五千萬公里之地球上換算所接收的 6 M330563 太陽能量，以電力表示約為^爪贿kw左右，這個值大約 為找平均年雜電力針萬倍大。若我·财效的運用 此月b源，則不僅能解決消耗性能源的問題，連環保問題也可 ‘ 一併獲得解決。 ， 太陽能電池技術朝高效率及低成本的乡晶石夕(polysilicon)薄膜 發展’在電子元件巾財相當的則丨力。因為晶界會形成位能障 礙i得載子在傳義過程巾受到關，大尺寸晶粒的多晶石夕薄 膜比小尺寸晶粒的雜，具有較大的載子移動率（論馳丫）。非 ►晶石夕薄膜之載子移動率多低於！咖2/^以下，而多晶石夕薄膜之載子 移動率可魏⑽em2/V·似上，可知多祕技術將是絲發展的重 點^-。為了獲得較高的載子移動率，則需要_結晶缺陷與減 少晶粒邊界降低障礙，因此必須於再結晶時，使砍晶成長得較完 整以減少結晶缺陷，並且獲得較大的晶粒。 在半導體製造產業中，多晶矽通常經由低壓化學氣相沉積 (Low Pressure Chemical Vapor Deposition，以下簡稱LPCVD)處理 後’再卩高於_°C的敎程序予以製成，此方法即為俗稱之固相 結晶(Solid Phase Crystallization，以下簡稱SPC)。然而此法需要極 间的退火溫度才能得到適當的晶粒。目前製作低溫多晶矽薄膜的 習知技術可分類為下列三大類： - 1·觸媒式化學氣相沉積法(Catalytic CVD，以下簡稱M330563 VIII. New Description: [New Technology Field] This new type is related to a kind of solar cell component, which is particularly related to a solar cell component structure with a metal-induced low-temperature polycrystalline germanium film, which can effectively improve its photoelectricity. Conversion efficiency. [Prior Art] Since the extension of the 10th century to the 20th century, the shadow of the global energy crisis has not gone, and it is likely to break out in life at any time. After the Kyoto Protocol, the company is committed to the development and creation of alternative energy sources, among which solar energy is the most active area for the development and utilization of new energy. It is estimated that the energy of the surface of the raspberry, which is illuminated by the sun, is about one million times that of all the people on the earth. If you can make full use of one percent of solar energy, you can convert it with a conversion rate of 1%. For electricity, we can meet our needs. The development of solar cells (s-eells) was first traced invented by Bdl Laboratories in 1954. The motivation for #时 R&D is to provide energy for partial and regional power supply systems. At that time, the efficiency of solar cells was only (10). Then, starting from the launch of the first satellite in the Soviet Union in 1957, the United States astronauts landed on the moon. The solar cell's response is said to be fully utilized. The ultimate goal of human development of solar cells is to replace the current traditional energy sources. We all know that the energy of the sun is inexhaustible. The energy from the 'out of the world' is converted into electricity of about 3.8xl 〇 23kw; the total solar energy is converted on the earth from the sun - 500 million kilometers. The amount of solar energy received by the 6 M330563 is expressed in terms of electricity, which is about 2 times the claw bribe. This value is about 10,000 times larger than the average annual hybrid power needle. If I use the financial effect this month, it will not only solve the problem of consumable energy, but even the environmental problem can be solved. The development of solar cell technology toward high-efficiency and low-cost polysilicon film development is quite powerful in electronic components. Because the grain boundary will form a potential energy barrier, the carrier will be closed in the process of the transfer process, and the large-grained polycrystalline stone film has a larger carrier mobility than the small-sized crystal grain. ). Non- ► spar lithography film carrier mobility is much lower than! Coffee 2 / ^ below, and the mobility of the carrier of the polycrystalline stone film can be Wei (10) em2 / V · like, it can be seen that the multi-secret technology will be the focus of silk development ^-. In order to obtain a high carrier mobility, crystallization defects and reduction of grain boundary reduction are required, so that it is necessary to make the dicing growth more complete at the time of recrystallization to reduce crystal defects and obtain larger crystal grains. In the semiconductor manufacturing industry, polycrystalline germanium is usually produced by a low pressure chemical vapor deposition (LPCVD) treatment, which is then subjected to a enthalpy higher than _ ° C. This method is commonly known as solid phase. Solid Phase Crystallization (hereinafter referred to as SPC). However, this method requires an extreme annealing temperature to obtain the appropriate crystal grains. The conventional techniques for producing low temperature polycrystalline germanium films can be classified into the following three categories: - 1. Catalytic CVD (hereinafter referred to as Catalytic CVD).
Cat-CVD):這是一種無須經由氣相沉積，而可直接沉積多晶矽薄 膜(poly-Si film)的方法。 2·準刀子雷射再結晶法(Excimer Laser Annealing，以下簡稱 ELA) ·以準刀子雷射加熱及融化非晶石夕，含有低量氫成分之非晶 砍薄膜將會再結晶為多晶秒薄膜。 7 M330563 3·金屬誘發再結晶法（Metal Induced Crystallization，以下簡 稱MIC) ··相較於傳統的SPC，此方法能在較低溫之下（約 500〜600 C )製造出多晶石夕薄膜。此係由於薄層金屬在結晶形成前 即先被包覆，而此薄層金屬扮演著降低結晶化的活性之功能。MIC 法是將非晶矽薄膜與某些特定金屬膜接觸時，在約6〇〇。〇或是更低 的溫度下退火後，會產生共晶或雜物，並以此為晶核誘發非晶 矽的再結晶化以得到多晶石夕。 然而’在上述低溫多晶石夕薄膜的習知技術之中，SPC具有製程 簡單之特黑占’但缺點則是退火時間過長，退火溫度過高。準分子 雷射再結晶無法大面積誘發，雷射波長與薄膜厚度吸收深度反應 有限，且有重疊照射關題，使其均勻性降低，所以還是無麟 到大晶粒，且成本和製程溫度也較高。 、由於在眾多結晶技術中，金屬誘發再結晶成膜技術可一次完 成大面積低溫乡㈣薄膜之成長。如習知較之中 1226660號’標題為-_/銅金屬誘導橫向成長多晶料膜的方 法，其揭示使用-種鎳/銅合金誘導横向成長多晶㈣膜，可有效 降低多晶矽膜的製程溫度。 有鑑於此，需提供-種料錢之低衫祕薄膜之太 ，能電池藉結構。#由_金伽的高表面積及其高催 力，並結合兩階段退火方式，可在較低縣溫度下_不同厚度 換效 與大面積之多㈣細，並達到提高該太陽能電池之光電轉 率。 M330563 【新型内容】 要目的在於提供—種具有低溫多祕薄膜之太陽 在基板材料切_性。 妓^電_概度且增加 播，的’本創作之-種金屬誘發之太陽能電池元件結 干、ι=Γ· Τ二V"基板；—ρ型半導體層，其係用於產生 包洞，:本貝⑴型半導體層，其係用於提高可見光譜光子 的吸收辄圍；—Ν型半導體層，其係用於產生電子；以及 一第一電極和—第二電極，其係用於取出電能：以及-第二 電極，猎由_該太陽能電池S件之—側至該ρ型半導體層，並於 其上方形成，其侧於取㈣能；其巾，該本f⑴型半導體層 係由結合金屬鋁與二階段退火方式所形成。 根據本創作之-特徵，該基板係選自玻璃、塑膠基板、 半導性基板、絕緣基板、可撓性基板或不鏽鋼板之一。 根據本創作之-特徵，該P型半導體層之接雜方式係 選自於銘誘導結日日日⑪、固相結晶化或準分子雷射退火製程 之一。 、 根據本創作之-特徵，觀層半導體之摻雜方式係選 自於熱擴散法或離子佈植法之製程一。 根據本創作之一特徵，該第一電極與該第二電極係選 自於蒸鍍法、電鍍法及印刷法等製程之一方法製成，並且 其材料係選自於鎳、金、銀、鈦、細、及料導電材料之 電池元件結 根據本創作之一種具有低溫多晶矽薄膜之太陽能 M330563 半導體層107 ’係形成於該本質⑴型半導體層106上方，1係 聽產生電子。鄉二電極1_軸於社陽能躲元件励一、 修斤侧後之該P形半導體谢上方，其作用係取出電能，而盆勢 . 财法係選自於驗法、電鍍法及印刷法賴程之—種方法从 •，材料選自於錄、金、銀、鈦、把、及銘等導電材料之一種。 型半導體層104形成於基板101上，p型半導體是指在 =徵材貝中加入的雜質（impurities)可產生多餘的電洞，以 _ : ’同構成夕數载子之半導體。例如，若對本徵半導體摻入3 饧原子的雜質時，就石夕和錯半導體而言，會形成多餘之電洞。 電流則以電洞為主來運作。 該本質（i)型半導體層106形成於該P型半導體層1〇4 上’本質（1)型半導體層對於薄膜型太陽電池之電特性影 響最大，因為當電子與電洞在材料内部傳導，如其距離過長二 兩者重合機率極高，為避免此現象發生，i層半導體層ι〇6不 宜過厚，但如太薄，又易造成吸光不足。i層半導體層1〇6一 藝 般以非晶矽（a-Si:H)為主，但非晶矽先天上最大的缺失在於 光照使用後短時間内性能的大幅衰退，也就是所謂的5〜 (Staebler-Wronski)效應，其幅度約15〜35%。發生原因是 因為材料中部份未飽和矽原子（Dangling bond)，因光照射， .~ 备生結構變化之故。 • 該N型半導體層107形成於該本質（i)型半導體層 上，N型半導體是指在本徵材質中加入的雜質可產生多餘的 電子，以電子構成多數載子之半導體。例如，若對本徵半導 體摻入5價原子的雜質時，就矽和鍺半導體而言，會形成多餘 之電子。電流則以電子為主來運作。 11 M330563 該上電極108形成於該1^型半導體層1〇7上，其係為—a 姆（Ohrmc contact)電極。其功用為將太陽電池所生之& 以最少損失取出。賊希望此部分沒有整流，串流電^ ’ 接者強度高’峡接性。—般歐姆電極形成法有蒸鑛法、· 鍍法及印刷法等。在製造高效率之太陽電池時，蒸鍛法採: 之材料有錄、銀、鈦、白金、把、氧化辞、及氧化錯等。 根據本創作之之元件結構，其係結合金屬軸二赌退火复 製程步驟所形成’並可製作大面積之多晶石夕薄膜。請炎昭第2 圖，其中該該p型半導體層104與該本質（i)型半導體層、1〇6 係分別由第2圖中步驟203與步驟205所形成。使用金屬鋁作為 誘發金屬並結合二階段加熱退火來達到多晶矽之主要步驟 參考第3圖。 *、' 請參照第3a圖，其為第2圖之步驟2〇〇，金屬濺鍍系統鍍 5〇-50〇nm之鋁膜1〇2於基板1〇1上。當然，在旋塗前，需有二 清洗基板過程，因基板表面容易殘留金屬不純物、微粒子、 有機物、金屬殘留物· ••等污染所以必須先將基板經過清洗以 得乾淨之表面。該基板101係選自玻璃、塑膠基板、半導性基 板、絕緣基板、可撓性基板或不鏽鋼板之一。該金屬銘1〇2 係為可與矽材產生低溫共晶之金屬，如金或鋁及其合金。因 為，石夕與銘的共晶溫度在577°C，而石夕與金的共晶溫度在 376°C。在錢鐘過程中，該基板1〇1係位於一機台上，該金屬 紹係以利用電漿内所產生的部分離子加速轟擊置於陰極板的 電極材料(target)，所擊出的金屬原子沈積於另一電極的表面 二次電子，金屬原子會自動分散排列在該基板之表面，形成 金屬薄膜。 12 M330563 請參照第3b圖，其為第2圖之步驟201，其製成參數為： 功率 100W，腔體壓力（Chamber pressure ) 10-3 托耳（T〇rr )， 基板溫度300°C，氣體流量600sccm(SiH4)，因此其沉積速率 約每分鐘770 A。 請參照第3c圖，其為第2圖之步驟202，以一第一溫度加 熱該基板101，使得該非晶矽薄膜形成一具有第一厚度之多晶 矽薄膜104，其中該第一溫度係介於450-600°C。該步驟係為 第一階段之退火過程，藉由該金屬鋁具有極高表面積及高催 化能力來達到較低溫度下誘發非晶矽薄膜。由於該金屬鋁1〇2 係與石夕材產生低溫共晶之金屬，因此在整個加熱過程當中， 该些金屬銘會逐漸與非晶石夕形成交換(exchange)的反應機 制，亦即是該非晶矽在與該些金屬鋁的介面上開始形成多晶 石夕的結構，而該些金屬|呂會逐漸往上析出在以形成多晶石夕薄 膜的表面上。隨著加熱（亦即退火）溫度的增加，多晶矽薄 膜的結晶特性也會增強。需注意到，在本步驟之退火並不限 於以爐管或快速退火爐來退火，亦可以使用準分子雷射或連 續波之YAG雷射來退火。 步驟203，蝕刻該金屬鋁102。舉例來說，若以金屬鋁作 為誘發金屬’則可以使用銘|虫刻液將金屬|呂姓刻出來。該具 有第一厚度之P型半導體層104即可作為後續催化非晶矽薄膜 的晶種層。 請參照第3d圖，其為第2圖之步驟204，沉積一具有一第 二厚度之非晶石夕薄膜105於該具有第一厚度之多晶石夕薄膜 上。該具有第二厚度之非晶矽薄膜105之該第二厚度介於 1-5μιη 〇 13Cat-CVD): This is a method of directly depositing a poly-Si film without vapor deposition. 2. Excimer Laser Annealing (hereinafter referred to as ELA) · Heating and melting amorphous rock with a quasi-knife laser, the amorphous chopped film containing low hydrogen content will recrystallize into polycrystalline seconds film. 7 M330563 3. Metal Induced Crystallization (hereinafter referred to as MIC) · Compared with the conventional SPC, this method can produce a polycrystalline film at a lower temperature (about 500~600 C). This is because the thin layer metal is first coated before the crystal is formed, and the thin layer metal functions to reduce the activity of crystallization. The MIC method is about 6 时 when the amorphous germanium film is brought into contact with certain metal films. After annealing at a lower temperature or lower temperature, eutectic or foreign matter is generated, and the crystal nucleus is used to induce recrystallization of the amorphous germanium to obtain polycrystalline spine. However, among the conventional techniques of the above-described low-temperature polycrystalline film, SPC has a simple process of blackness, but the disadvantage is that the annealing time is too long and the annealing temperature is too high. Excimer laser recrystallization can not be induced in a large area, the laser wavelength and film thickness absorption depth reaction is limited, and there are overlapping illumination issues, so that its uniformity is reduced, so there is no lining to large grains, and the cost and process temperature are also Higher. Because of the many crystallization techniques, metal-induced recrystallization film formation technology can complete the growth of large-area low-temperature (four) films at one time. As is known in the prior art, No. 1226660, the title of -_/ copper metal induced lateral growth polycrystalline film, which discloses the use of a nickel/copper alloy to induce a laterally grown polycrystalline (tetra) film, which can effectively reduce the process of polycrystalline tantalum film. temperature. In view of this, it is necessary to provide a low-cost secret film of the kind of money. #由_金伽's high surface area and its high catalytic force, combined with two-stage annealing method, can be used at lower county temperatures _ different thicknesses and large areas (four) fine, and achieve the photoelectric conversion of the solar cell rate. M330563 [New content] The aim is to provide a kind of solar film with low temperature and multi-secret film in the substrate material.妓 ^ 电 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ a Benbe (1) type semiconductor layer for improving the absorption range of visible spectrum photons; a germanium type semiconductor layer for generating electrons; and a first electrode and a second electrode for removing Electrical energy: and - a second electrode, hunted by - the side of the solar cell S - to the p-type semiconductor layer, and formed above it, the side of which is taken from the (four) energy; its towel, the f (1) type semiconductor layer is Combined with metal aluminum and two-stage annealing. According to the present invention, the substrate is selected from the group consisting of a glass, a plastic substrate, a semiconductive substrate, an insulating substrate, a flexible substrate, or a stainless steel plate. According to the feature of the present invention, the P-type semiconductor layer is selected from the group consisting of one of the inducing day, the solid phase crystallization, or the excimer laser annealing process. According to the characteristics of the present invention, the doping method of the layer semiconductor is selected from the thermal diffusion method or the ion implantation method. According to one feature of the present invention, the first electrode and the second electrode are selected from one of a process such as an evaporation method, a plating method, and a printing method, and the material thereof is selected from the group consisting of nickel, gold, and silver. Battery Element Junction of Titanium, Fine, and Material Conductive Materials According to the present invention, a solar energy M330563 semiconductor layer 107' having a low temperature polycrystalline germanium film is formed over the essence (1) type semiconductor layer 106, and the 1 series is audible to generate electrons. The first electrode of the township has a 1_axis in the social yang can hide the component, and the P-shaped semiconductor after the repairing side is above, the function is to take out the electric energy, and the potency. The financial method is selected from the test method, electroplating method and printing. The method of Lai Lai is a kind of material selected from the group consisting of conductive materials such as recording, gold, silver, titanium, handle, and Ming. The type semiconductor layer 104 is formed on the substrate 101, and the p-type semiconductor means that impurities added in the = material shell can generate excess holes, and the semiconductors of the _: ' are identical to each other. For example, if an intrinsic semiconductor is doped with an impurity of 3 Å atoms, an extra hole is formed in the case of Shi Xi and the wrong semiconductor. The current is operated mainly by holes. The intrinsic (i) type semiconductor layer 106 is formed on the P type semiconductor layer 1〇4. The intrinsic (1) type semiconductor layer has the greatest influence on the electrical characteristics of the thin film type solar cell because when electrons and holes are conducted inside the material, If the distance is too long, the probability of coincidence is extremely high. In order to avoid this phenomenon, the i-layer semiconductor layer ι〇6 should not be too thick, but if it is too thin, it is easy to cause insufficient light absorption. The i-layer semiconductor layer 1〇6 is mainly made of amorphous germanium (a-Si:H), but the biggest deficiency of amorphous germanium is the sharp decline in performance in a short time after the use of light, which is called 5 ~ (Staebler-Wronski) effect, its amplitude is about 15~35%. The reason for this is because some of the unsaturated Dangling bonds in the material are due to light exposure, and the preparation structure changes. • The N-type semiconductor layer 107 is formed on the intrinsic (i) type semiconductor layer, and the N-type semiconductor is a semiconductor in which impurities added to the intrinsic material generate excess electrons and electrons constitute a majority carrier. For example, if an intrinsic semiconductor is doped with a impurity of a 5-valent atom, excess electrons are formed in the case of a germanium and a germanium semiconductor. The current is operated mainly by electrons. 11 M330563 The upper electrode 108 is formed on the semiconductor layer 1〇7, which is an Ohrms contact electrode. Its function is to take out the & The thief hopes that this part will not be rectified, and the current will be high. The general ohmic electrode formation methods include a steaming method, a plating method, and a printing method. In the manufacture of high-efficiency solar cells, the steam forging method: the materials are recorded, silver, titanium, platinum, handle, oxidation, and oxidation. According to the component structure of the present invention, it is formed by combining the metal shaft gambling annealing process step and can produce a large-area polycrystalline film. In the second diagram of Yan Zhao, the p-type semiconductor layer 104 and the intrinsic (i) type semiconductor layer and the 1〇6 system are respectively formed by steps 203 and 205 in Fig. 2 . The main step of using polyaluminum metal as the induced metal combined with two-stage heat annealing to achieve polycrystalline germanium is shown in Figure 3. *, 'Please refer to Figure 3a, which is step 2 of Figure 2, and the metal sputtering system is plated with an aluminum film of 5 〇 - 50 〇 nm on the substrate 1 〇 1 . Of course, before the spin coating, there is a need to clean the substrate. Since the surface of the substrate is likely to remain contaminated with metal impurities, fine particles, organic matter, metal residues, etc., the substrate must be cleaned to a clean surface. The substrate 101 is selected from one of a glass, a plastic substrate, a semiconductive substrate, an insulating substrate, a flexible substrate, or a stainless steel plate. The metal inscription 1〇2 is a metal that can produce low temperature eutectic with the coffin, such as gold or aluminum and its alloys. Because the eutectic temperature of Shi Xi and Ming is 577 ° C, and the eutectic temperature of Shi Xi and gold is 376 ° C. In the process of the money clock, the substrate 1〇1 is located on a machine platform, and the metal is used to accelerate the bombardment of the electrode material placed on the cathode plate by using a part of the ions generated in the plasma, and the metal is shot. The atom is deposited on the surface of the other electrode as a secondary electron, and the metal atom is automatically dispersed and arranged on the surface of the substrate to form a metal thin film. 12 M330563 Please refer to Figure 3b, which is step 201 of Figure 2, and its parameters are: power 100W, chamber pressure 10-3 torr (T〇rr), substrate temperature 300 °C, The gas flow rate is 600 sccm (SiH4), so its deposition rate is about 770 A per minute. Referring to FIG. 3c, which is step 202 of FIG. 2, the substrate 101 is heated at a first temperature such that the amorphous germanium film forms a polysilicon film 104 having a first thickness, wherein the first temperature system is between 450. -600 ° C. This step is the first stage annealing process, and the metal aluminum has an extremely high surface area and high catalytic ability to induce an amorphous germanium film at a lower temperature. Since the metal aluminum 1〇2 system and the stone material produce a low-temperature eutectic metal, during the entire heating process, the metal elements will gradually form an exchange reaction mechanism with the amorphous stone, that is, the non- The germanium begins to form a polycrystalline structure on the interface with the metallic aluminum, and the metal is gradually deposited upward to form a surface of the polycrystalline film. As the temperature of the heating (i.e., annealing) increases, the crystallization characteristics of the polycrystalline silicon film are also enhanced. It should be noted that the annealing in this step is not limited to annealing in a furnace tube or a rapid annealing furnace, and it may also be annealed using a pseudo-laser or continuous wave YAG laser. In step 203, the metal aluminum 102 is etched. For example, if metal aluminum is used as the induced metal, then the metal|Lv name can be carved out using Ming | The P-type semiconductor layer 104 having the first thickness serves as a seed layer for the subsequent catalytic amorphous germanium film. Referring to Fig. 3d, which is step 204 of Fig. 2, an amorphous film 105 having a second thickness is deposited on the polycrystalline film having the first thickness. The second thickness of the amorphous germanium film 105 having the second thickness is between 1-5 μm and 〇 13
其摻雜磷原子於 M330563 請參照第3e圖，其為第2圖之步驟205，以一第二溫度加 熱該基板101，以形成一具有第二厚度之i型多晶矽薄膜106。 該步驟係為第二階段之退火過程，由於該具有第一厚度之多 晶發缚膜104係作為具有弟^一厚度之非晶秒薄膜105之晶種 層，因此在第二次退火加熱的該第二溫度可以有效地降低， 一般較佳係介於200-500°C。加熱過程可在高溫低壓爐管或快 速退火爐（RTA)中通入氮氣(1-5 slm)進行。隨著加熱（亦gp 退火）溫度的增加，該具有第二厚度之i型多晶矽薄膜106的 結晶特性也會增強。而隨著該具有第二厚度之i型多晶矽薄膦 106的第二厚度的增加，第二次退火加熱的該第二溫度也必須 增加以達到有效的結晶特性。需注意到，在本步驟之退火教 不限於以爐管或快速退火爐來退火，亦可以使用準分子雷射 或連續波之YAG雷射來退火。 請參照第3f圖，其為第2圖之步驟206 多晶矽薄膜106内之深度示意圖。 在製備以金屬鋁102作為誘發金屬源方面。在物理方法方 面，代表性的方法為蒸鍍與濺鍍法，其利用電極加熱金屬源， 蒸鍍金屬蒸發出的金屬原子使沈積在基版上稱為蒸鍍'; 若是以氬離子轟擊金靶使表面發生發光放電現象 discharge) ’喊面金原子彈沈積縣版上稱為錢錢。 在製備以金屬鋁102作為誘發金屬源方面。在化學製備方 法種類甚多。代表㈣方法係為：電_助化學氣相沉積法， =乃是利用化學反應的方式，在反應器内將反應物為 ，)生成固態的生成物，並沉積在晶片表面的—種薄膜沉積^ 14 M330563 創作，任何熟習此技藝者，在不脫離本創作之精神和範圍内， 當可作各種之更動與修改。如上述的解釋，都可以作各型式 的修正與變化，而不會破壞此創作的精神。因此本創作之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖顯示本創作之一種具有金屬誘發之太陽能電池元件結 構之側視剖面圖； 第2圖為本創作之金屬鋁誘發多晶矽之步驟流程圖； 第3a圖顯示為第2圖中步驟2〇〇，金屬鋁濺鍍於基板上之 不意圖， 第3b圖顯示為第2圖中步驟201，非晶矽薄膜沉積於金屬 銘 表面之示意圖； 第3c圖顯示為第2圖中步驟202，形成多晶矽薄膜於基 板101上之示意圖； 第3d圖顯示為第2圖中步驟204,蝕刻鋁203於多晶矽表面 之後，於多晶矽1〇4表面沉積一層非晶矽薄膜1〇5上方之 示意圖； 第3e圖顯示為第2圖中步驟205,形成多晶矽薄膜1〇6於基 板104上之不意圖； 第3f圖顯示為第2圖中步驟206，摻雜磷原子於多晶矽薄 膜106内之一定深度之示意圖； 第4圖顯示為第2圖中步驟207完成之後，金屬鋁誘發多晶 16 M330563 矽薄膜之拉曼圖；以及 第5圖顯示為第2圖中步驟207完成之後，金屬鋁誘發多晶 矽薄膜之XRD圖。 ， 【主要元件符號說明】 100太陽能電池元件 * 101基板 102金屬層 103非晶矽層 104 P型半導體層 | 105非晶矽層 106本質（i)型半導體層 107 N型半導體層 108第一電極 109第二電極 17The doped phosphorus atom is referred to in Fig. 3e, which is step 205 of Fig. 2, and the substrate 101 is heated at a second temperature to form an i-type polysilicon film 106 having a second thickness. This step is a second-stage annealing process. Since the polycrystalline tie film 104 having the first thickness is used as a seed layer of the amorphous second film 105 having a thickness, the second annealing is heated. The second temperature can be effectively reduced, and is generally preferably between 200 and 500 °C. The heating process can be carried out by introducing nitrogen (1-5 slm) into a high temperature and low pressure furnace tube or a rapid annealing furnace (RTA). As the temperature of the heating (also gp annealing) increases, the crystallization characteristics of the i-type polycrystalline silicon film 106 having the second thickness are also enhanced. With the increase in the second thickness of the i-type polycrystalline thin phosphine 106 having the second thickness, the second temperature of the second annealing heating must also be increased to achieve effective crystallization characteristics. It should be noted that the annealing in this step is not limited to annealing in a furnace tube or a rapid annealing furnace, and may be annealed using a pseudo-molecular laser or a continuous wave YAG laser. Please refer to FIG. 3f, which is a schematic diagram of the depth in the polycrystalline germanium film 106 in step 206 of FIG. In the preparation of metal aluminum 102 as an induced metal source. In terms of physical methods, a representative method is evaporation and sputtering, which uses an electrode to heat a metal source, and vaporizes the metal atoms evaporated from the metal to deposit a deposit on the substrate, which is called evaporation*; The target causes the surface to emit a discharge phenomenon. "The surface of the gold atomic bomb deposit is called money. In the preparation of metal aluminum 102 as an induced metal source. There are many types of chemical preparation methods. The representative method (4) is: electro-assisted chemical vapor deposition, = is the use of chemical reaction, the reactants in the reactor, to produce a solid product, and deposited on the surface of the wafer - film deposition ^ 14 M330563 Creation, any person who is familiar with this skill, can make various changes and modifications without departing from the spirit and scope of this creation. As explained above, all types of corrections and changes can be made without destroying the spirit of this creation. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side cross-sectional view showing the structure of a metal-induced solar cell element of the present invention; Fig. 2 is a flow chart showing the steps of the metal-induced polycrystalline germanium in the present invention; 2 Step 2 in the figure, the metal aluminum is sputtered on the substrate, FIG. 3b is a schematic diagram of step 201 in FIG. 2, and the amorphous germanium film is deposited on the metal surface; FIG. 3c shows the second In the step 202 in the figure, a schematic diagram of forming a polycrystalline germanium film on the substrate 101 is shown; FIG. 3d shows a step 204 in FIG. 2, after etching the aluminum 203 on the surface of the polycrystalline silicon, depositing an amorphous germanium film on the surface of the polycrystalline germanium 1〇4. FIG. 3e is a schematic view showing the step 205 of FIG. 2, the polycrystalline germanium film 1〇6 is formed on the substrate 104; FIG. 3f is a step 206 of FIG. 2, and the phosphorus atom is doped to the polysilicon film 106. Schematic diagram of a certain depth within the interior; Figure 4 shows a Raman diagram of the metal-induced polycrystalline 16 M330563 tantalum film after completion of step 207 in Figure 2; and Figure 5 shows the completion of step 207 in Figure 2, metal The XRD pattern of the aluminum-induced polycrystalline germanium film. [Major component symbol description] 100 solar cell element * 101 substrate 102 metal layer 103 amorphous germanium layer 104 P-type semiconductor layer | 105 amorphous germanium layer 106 essence (i) type semiconductor layer 107 N-type semiconductor layer 108 first electrode 109 second electrode 17