M368178 八、新型說明： 【新型所屬之技術領域】 本發明關於一種操作薄晶圓的靜電式基材保持器。 【先前技術】 靜電式保持系統係長久以來習知者，且在許多專利案 中提到。關於專利文獻的背景技術可參考以下專題：M368178 VIII. New Description: TECHNICAL FIELD The present invention relates to an electrostatic substrate holder for operating a thin wafer. [Prior Art] Electrostatic retention systems have long been known and are mentioned in many patents. Regarding the background art of the patent literature, the following topics can be referred to:
Shermann 等人：Semiconductor International V 20，1997 年 7 月，319〜321 頁；olsen 等人：Rev Sci. Instrum.66(2)1995 年 2月，1 108〜14 ;渡邊氏等人：日本應用物理期刊，卷（32)， 1993 年，864〜71 ; Hartsough Solid State Technology， 97(1)1994,91〜98。依此，利用靜電式保持裝置將半導體基 材（晶圓）固定在晶圓（Wafer)的處理機器中的技術屬背景技 術。但在此，該晶圓在每一道程序步驟結束後都要從該靜 電式保持裝置鬆開。 而且利用靜電式保持系統將晶圓在用的基材保持器上 • 運送的技術也已有各種不同的文獻提到’見上述Shermann 等人的專題。但所有這些裝置有一共通點：該晶圓只在一 道程序-或操作步料在H巾保持與該靜電式保持系 統連接。 2 0 0 /z m的薄 在標準厚度（約750 #m)的晶圓—直到約 化晶圓的場合，這㈣統可實現所靜電式保持系統對它們 的需求’至少在有關操作方面是如此。但在厚度約2〇〇^〜 約100心時，則晶圓另外要用一層黏上去的膜[膠帶(Tape)] 補強才行。另-個困難在於：如果由於研磨造成的缺陷沒 5 M368178 有利用濕式或乾式的除應力措施除去，則該研磨過的薄晶 圓極易破裂。 田日日圓厚度在1 〇〇 # m以下（目前技術的限度可達到約 20 # m厚度）的場合，在背景技術中，須將晶圓藉黏合（蠟、 雙面膠膠帶、純黏著劑）或甚至用軟銲施到一個剛性的載 體上以減少該解除了應力的晶圓的破裂之虞或嚴重彎曲 情事。 仁這種方法並不能令人滿意，因為一直到軟銲為止， 逆種連接部對溫度的穩定性都太低，且在所有的方法中， 才溥μ圓從載體拿掉，在顧慮晶圓有破裂之虞的情形 下，技術上乃是極為麻煩且問題重重者。此處的一個例外 、有使用光硬化的黏著劑，它們在紫外線照射後幾乎完全 八黏者力量。但目前這些黏著劑不能耐高於約的 溫度。 【新型内容】 _ 脫離這種問題的一種巧妙途徑係使用一種可運送的靜 電式保持器（基材保持器），該靜電式保持器在此步驟中稱為 轉移ESC」。用此方式，該晶圓被放上去，且在晶圓薄 化時，一直留在該「轉移ESC」±，為時幾個程序步驟或 —所有的其他程序步驟（加工步驛、操作步驟、中間儲存步 驟）例如，一直到個別構件分開或構件或晶圓拿開以作封 装為止。 利用這種「轉移Esc」，即使是很薄（<5〇^)的晶圓 可以毫無問題地操作及運送。與其他方法（例如黏合）不 6 M368178 同’該晶圓也报容 而固定住，並藉著將該靜電式 \'、、力量（電荷景積） 該轉移ESC鬆開。 瓦解（電荷放電）而從 作4=2加的清洗步驟或類似之處理以將該晶圓 作，月洗或類似之處理以除去黏著劑或箔片。 -種適合這種目❼之可 雷 或部分地滿足以下的要求：*電式保持器必須完全 保持力量必須像在—船 用於固定曰圓淋田 ；將晶圓磨薄的研磨機中 用於固疋曰曰圓所用的真空保持 NW)。因，此該靜電保持器由二：樣咖約0.1 程序時要有儘量大的保持力量。、剪向力’故在研磨 因此在這襄，如果沒有其他 聚積）與放電（靜電荷放出）而要电4 ’例如因充電（靜電荷 極電式保持器乃是選擇的方法。 的後：電:二！保;持其靜電荷儘量久(幾小時)而無持續 刃伖兄罨（Nachladen)情事，俾 處理步驟或者在數道程序步驟或處理牛較長的程序步驟或 會自動從該轉移Esc分離開。’ v驟時，該薄晶圓不 此外，β亥s亥轉移E s c必須對 磨時及濕刻蝕時卜 與馱有抵抗性（例如在研 另外，此系統須極平坦，因為 磨時就不平了。 右不然，该日日圓在研 此外，匕必須能耐高溫度，理相 °c (例如在該功率半%的情形須耐高達450 力羊+導體作乾刻餘或電聚刻触時或熱處理 7 M368178 時）。 1 mm更薄）且極輕， 無轉移ESC的厚晶 裝且不需額外的投 另外，它須儘可能地薄（儘可能地比 俾月b在既有的—些機器與裝置（它們係為 圓設計者）操作而只用作儘㈣地H & 資成本。Shermann et al.: Semiconductor International V 20, July 1997, pp. 319-321; olsen et al.: Rev Sci. Instrum. 66 (2) February 1995, 1 108~14; Watanabe et al.: Japanese Applied Physics Journal, Vol. (32), 1993, 864-71; Hartsough Solid State Technology, 97(1) 1994, 91-98. Accordingly, the art of fixing a semiconductor substrate (wafer) to a processing apparatus of a wafer by an electrostatic holding device is a background art. Here, however, the wafer is released from the electrostatic holding device after each program step. Moreover, the use of electrostatic retention systems to place wafers on substrate holders has also been described in various literatures. See the Shermann et al. topic above. However, all of these devices have one thing in common: the wafer is only connected to the electrostatic holding system in a program- or operating step. 2 0 0 /zm thinner in standard thickness (about 750 #m) wafers - until the wafer is reduced, this (4) can achieve the requirements of the electrostatic holding system 'at least in terms of operation . However, when the thickness is about 2 〇〇 ^ ~ about 100 hearts, the wafer is additionally reinforced with a layer of adhesive film [Tape]. Another difficulty is that if the defect due to grinding is not removed by wet or dry de-stressing measures, the ground thin circle is extremely susceptible to cracking. When the thickness of the Japanese yen is less than 1 〇〇 #m (the current technical limit can reach about 20 #m thickness), in the background art, the wafer must be bonded (wax, double-sided adhesive tape, pure adhesive) Or even applying a soft solder to a rigid carrier to reduce the rupture or severe bending of the stress-relieved wafer. This method of Ren is not satisfactory, because the temperature stability of the reverse connection is too low until the soldering, and in all methods, the 溥μ circle is removed from the carrier, in the wafer In the case of a rupture, it is technically extremely troublesome and problematic. An exception to this is the use of photohardenable adhesives that are almost completely viscous after UV exposure. However, these adhesives are currently unable to withstand temperatures above about. [New content] _ A clever way to get rid of this problem is to use a transportable electrostatic holder (substrate holder), which is called transfer ESC in this step. In this way, the wafer is placed and left in the "transfer ESC" ± when the wafer is thinned, for several program steps or all other program steps (processing steps, operating steps, Intermediate storage steps), for example, until individual components are separated or components or wafers are removed for packaging. With this "transfer Esc", even thin (<5〇^) wafers can be handled and shipped without problems. Unlike other methods (such as bonding), the wafer is also fixed and fixed by the method, and the transfer ESC is released by the electrostatic type (', power (charge landscape)). Disintegration (charge discharge) is performed by a 4 = 2 addition cleaning step or the like to treat the wafer, a monthly wash or the like to remove the adhesive or foil. - A kind of mine that is suitable for this kind of sight or partially meets the following requirements: * The electric retainer must be completely maintained in force. It must be used in the ship to fix the rounded field; in the grinding machine where the wafer is thinned, it is used for solidification. The vacuum used for the round is kept NW). Therefore, the electrostatic retainer should have as much retention force as possible when the procedure is about 0.1. , the shearing force 'so in the grinding, so here, if there is no other accumulation) and the discharge (static charge discharge) and electricity 4 'for example due to charging (static charge pole electric holder is the method of choice. After: Electricity: two! Bao; hold its static charge for as long as possible (a few hours) without continuous sorrow (Nachladen), 俾 processing steps or steps in a few procedures or processing cattle longer or automatically from the The transfer of the Esc is separated. When the v is thin, the thin wafer does not have to be added, and the E sc must be resistant to grinding and wet etching (for example, in research, the system must be extremely flat). Because the grinding is not smooth. Right, the Japanese yen is still in the research, the 匕 must be able to withstand high temperatures, and the phase is °c (for example, in the case of half the power of the power, it must be as high as 450 sheep + conductor for dry or When the electropolymer is engraved or heat treated at 7 M368178) 1 mm thinner and extremely light, without the transfer of ESC thick crystals and without additional casting, it must be as thin as possible (as much as possible In the existing machines and devices (they are round designers) (Iv) to make only as H & capital costs.
z作為1使°亥「轉移Esc」即使在部分潮澄的環境中也能 ^作’匕另外還要作良好的絕緣。因此必須將接點端子（高 壓端子Μ呆護免得受到濕氣的損害。因此該「轉移咖」的 充電或放電，舉例而言，都要藉高電壓的感應式耦入用無 接觸的方式進行。如此’該「轉# Esc」須設有—個整流 器電路’卩由該耦入的交流電路產生所需的直流電壓。如 果該「轉移ESC」有較長時間不能探手而及，則將該整個 充電-及放電裝置整合在該「轉移ESC」中並利用一個電池 或一蓄電池供電，也甚有利。為此，必須將一個交流電將 一個交流電整流器電路和一個電壓多倍器的串級（級聯） 電路（Kaskade)與一隨後的整流器電路整合到該「轉移ESc」 中。 如果有必要’這些重要的功能…如靜電荷充電及靜電 荷放電…也可以呈「轉移ESC」的方式作遙控。 由於上述的需求，除了塑膠外，特別是陶瓷，例如石 英、玻璃、氧化铭、二氧化鈦、鈦酸鋇可作為該可運送的 靜電式保持器的介電質。 此外，使用陶瓷還有一優點，即：如此可在介電質的 厚度很小的場合實現高的介電常數。如此，該「轉移E S C」 8 M368178 的保持力* ’舉例而言，比起塑膠來，I高上許多倍。 要製造很薄的的「轉移ESC」，也可使用微電子工程 或微構造工程所習知的製造方法（例如光刻蝕，電聚刻蝕） 與析出程序（PVD-，CVD·技術）把介電材料析出到半導體材 料（如矽）上。 . 「轉# ESC」也可設有電子標籤以將該個別的磨薄的 且因此極昂貴的晶圓生產作追踪。因此可製造一種晶圓， ' 它最後係為適合的可運送的「轉移Esc 。 ’將該晶圓放在該「轉移ESC」上的作業、將該與晶圓 連接的「轉移ESC」儲藏的作業、將該上述的複合物作後 充電（Nachladen)的作業、以及可能需要的將晶圓從「轉移 ESC」鬆開的作業適當地在—個分別的裝置中（此處稱「送 交站」）達成。 該送交站的核心組件為一個檢體抬’該檢體枱如有必 要，也可設計成靜電式保持器形式，該「轉#臟」定位 .在其上。然後將該晶圓放在該「轉移Esc」上，並藉著將 該「轉移ESC」充電而固定住。「轉矛多咖」當晶;很不 平坦時，可能須將該固定作用利用一種機械方式的負荷來 幫助。如果在此檢體抬上也要把晶圓從「轉移esc」鬆開， •則它須設有感測器，以將晶圓從「轉移Esc」鬆開的^形 顯示出來。 送交站的中心的檢體枱用一機器人操作，該機器人將 晶圓從載體拿掉，並放到該檢體抬上的「轉移esc 此機器人（或者可選擇性地用第二個機器人）將該移 9 M368178z is used as a 1 to make the "transfer Esc" even in a part of the environment, and it is also good insulation. Therefore, the contact terminals (high-voltage terminals must be protected from moisture damage. Therefore, the charging or discharging of the "transfer coffee", for example, must be carried out in a contactless manner by means of high-voltage inductive coupling. Thus, the 'converted ' Esc' shall be provided with a rectifier circuit' to generate the required DC voltage from the coupled AC circuit. If the "transfer ESC" is not available for a long time, then It is also advantageous that the entire charge-and-discharge device is integrated in the "transfer ESC" and powered by a battery or a battery. To this end, an alternating current must be used to cascade an alternating current rectifier circuit and a voltage multiplier ( The cascading) circuit (Kaskade) and a subsequent rectifier circuit are integrated into the "transfer ESc". If necessary, 'these important functions... such as electrostatic charge charging and electrostatic charge discharge... can also be used as "transfer ESC" Remote control. Due to the above requirements, in addition to plastics, especially ceramics, such as quartz, glass, oxidized, titanium dioxide, barium titanate can be used as the transportable electrostatic The dielectric of the holder. In addition, the use of ceramics has the advantage that a high dielectric constant can be achieved in the case where the thickness of the dielectric is small. Thus, the retention of the "transfer ESC" 8 M368178 * ' For example, I is many times higher than plastic. To make a very thin "transfer ESC", you can also use the manufacturing methods known in microelectronic engineering or microstructural engineering (such as photolithography, electropolymerization). Etching) and precipitation procedures (PVD-, CVD, technology) to deposit dielectric materials onto semiconductor materials (such as germanium). "Transfer #ESC" can also be provided with electronic tags to make the individual thin and therefore Very expensive wafer production for tracking. Therefore, a wafer can be fabricated, 'it is finally suitable for transportable "transfer Esc." The wafer is placed on the "transfer ESC" operation, the crystal The operation of the circularly connected "transfer ESC" storage, the operation of charging the above-mentioned composite (Nachladen), and the work required to release the wafer from the "transfer ESC" are appropriately performed in a separate device. Medium (herein referred to as "delivery station" The core component of the delivery station is a sample lift. The sample station can also be designed in the form of an electrostatic holder. The "drag" is positioned on it. Then the wafer is placed. Place it on the "Transfer Esc" and fix it by charging the "Transfer ESC". "Transfer Spear" is a crystal; when it is very uneven, it may be necessary to use a mechanical load. Help. If the wafer is lifted from the “transfer esc” when it is lifted, it must be equipped with a sensor to display the wafer from the “displacement Esc”. The center of the station is operated by a robot that removes the wafer from the carrier and places it on the specimen. "Transfer esc this robot (or alternatively a second robot) The shift 9 M368178
ESC」從特別的攔條（H FQr, ^ ^ ae)T桿並將該载有晶圓的「轉移 sc」放入攔條或特殊的载體中。 -種可能的方式’係使其一個將該與晶圓連接的「轉 移ESC」直接地送到該加工 晶圓破裂情事，故各、在^站時不致有 曰曰 作業要用光學位置感測器 (例如雷射位置感測器）控制及監視。 個靜電式保持系統（特 轉移ESC」和一個或 因此這種用於作運送與操作的整 別是晶圓的靜電式保持系統）由數個「 數個送交站構成。 此處所述的方法與該靜電式保持系統以及上述的可運 送的靜電式「轉移Esc」特宜用於在薄晶圓的場合作處理。 這種方法與這種操作系統的其使用領域可廣泛涵蓋那 些基於經濟理由及技術情況宜㈣可運送的靜電式保持器 的场合（該靜電式保持器須能在較長時間維持此有此靜電式 力量而不用持續作位置固定的後充電作業)。其一例子為晶 圓的物理化學分析。 因此&種系統可用於將晶圓送入一個用於作晶圓分析 的電子顯微鏡（SEM)及由該電子顯微鏡送出。 【實施方式】 ^以下的例子（流程實例）說明該具有一個「轉移ESC」的 靜電式操作系統（特別是用於薄晶圓者）。 (1) 將先前構造化的厚晶圓（厚度約2〇〇〜75〇 # m)在載 體式在晶圓箱中供應以作磨薄。 (2) —機器人將該厚晶圓從載體取出並將它放到該「轉 M368178 移ESC」上。 (3)將該「轉移服」充電並藉此將所要 定住。接著，將該「轉移ESCj隨該固定的曰=曰曰圓固 體中或直接運送到進-步的加 曰曰圓放入到载 刻機）。 機磨4 (例如研磨機或蝕 ’⑷在-道加工之時、之後、或之前，將 母隔一段預定時間間隔（典型例為4〜8 〜 」 圓在該加工機器之内或之外(例如 "固疋住的晶 送交站)作後充電。卜(例如，如上述可藉助於另-個 “舉例而口 ’將该後充電過的「轉移ESC」隨 该固疋住的晶圓送到下—個加工機器 (6)可將上述的4)盥 戰 、的步驟各依程序流程長度及程 序步驟數目而定而重覆數次。 在各道程序步驟結束（例如磨薄、切鑛、分類）後，或 从有必要也可在這些步驟之間，將該「轉移ESc」 、苛放# ϋ將該薄晶圓或已切離的構件鬆開以作進一 步加工，或者，例如作封裝。 【圖式簡單說明】 第-圖係本創作裝置的示意圖。 【主要元件符號說明】 無ESC" from the special bar (H FQr, ^ ^ ae) T-bar and put the wafer-loaded "transfer sc" into the bar or special carrier. - a possible way 'to make the "transfer ESC" connected to the wafer directly to the processing wafer breakage, so that each station does not have a flaw in the operation to use optical position sensing Control (eg, laser position sensor) controls and monitors. An electrostatic retention system (specially transferred ESC) and one or such an electrostatic retention system for wafers that are used for transport and operation are composed of several "number of delivery stations." The method and the electrostatic retention system and the above-described portable electrostatic "transfer Esc" are particularly suitable for field cooperation processing on thin wafers. This method and the field of use of such an operating system can cover a wide range of electrostatic holders that can be transported for economic reasons and technical reasons (the electrostatic holder must be able to maintain this static electricity for a long time). Power without the need for continuous post-fixation work). An example of this is the physicochemical analysis of the crystal. Therefore, the & system can be used to feed the wafer into an electron microscope (SEM) for wafer analysis and to send it out. [Embodiment] The following example (process example) illustrates an electrostatic operating system (especially for thin wafers) having a "transfer ESC". (1) A previously structured thick wafer (thickness of about 2 〇〇 to 75 〇 #m) is supplied in a wafer cassette in a carrier type for thinning. (2) - The robot takes the thick wafer out of the carrier and places it on the "Transfer M368178 Shift ESC". (3) Charge the "transfer suit" and use this to fix it. Next, the "transfer ESCj is placed in the fixed 曰=曰曰 round solid or directly into the progressive twisting circle into the engraving machine.) Machine grinding 4 (eg grinder or eclipse '(4) in - At the time of the processing, after, or before the processing, the mother is separated by a predetermined time interval (typically 4~8 ~ ” circle inside or outside the processing machine (for example, "solid storage station) After charging, it can be charged (for example, as described above, the "transfer ESC" which is post-charged by means of another "example" can be sent to the next processing machine (6). The steps of the above 4) warfare are repeated several times depending on the length of the program flow and the number of program steps. After the end of each program step (for example, thinning, cutting, sorting), or from necessity Between these steps, the "transfer ESc" can be loosened or the detached member can be loosened for further processing, or, for example, as a package. [Simplified Schematic] - The diagram is a schematic diagram of the authoring device. [Main component symbol description] None