M362979 五、新型說明： 【新型所屬之技術領域】 本創作係有關-種具散熱功能之太陽能電池_結構及 屬板’特別是指-種彻氮化佈練熱金屬板上 ^效 之太陽能電池封裝結構。 门散‘、，、效率 【先前技術 隨著人類生活的進步，對於能源的需求是愈來愈高。但地 含之能源將日漸枯竭，各㈣代的再生能源便在這種情況下發展出 來，其中尤以太陽能為代表4陽紐電是细半導断料所 的太陽能電池，可將光能轉換成電能。 以聚光型太陽能電池封裝結構為例，其有別於傳統面板式 電地之封裝結構，主要為ΙΠ-V族多接面化合物半導體太陽能電池，且 有耐熱性之優點，在數百倍㈣光比之下可以制4G7%的光電轉ς 效率。然而，當使㈣_請能電池進行，由於材料本 身的光譜吸㈣力的關，並紐百分之百將総賴成電能輸出。 因此，進人太陽能電池内多餘的能量不是透過反射或穿透，就是形成 熱能囤積在電池巾造成元件溫度的上升。#溫度上升時，賴載子產 生的機率會提^但姆的，溫度上升卻造成電軸部的暗電流大量 上升，反而電池轉換效率下降。 在太陽能電池封裝結構中，其散熱路徑一般有兩種途徑，一種為 太陽能電池直接經封裝表面向外散熱至外界空氣中，另_方面則是由 封裝結構中之錫球(solder)或導線架將熱傳遞到電路板上，再藉由電路 板將熱傳遞至外於財。細，絲祕件下，贿社^能電池 封裝結構之溫度會隨著聚絲率越高而场，太陽能電池的溫度隨之 升高’造成太陽能電池的熱能無法自封裝表面或電路板適度的傳遞至 外界空氣巾，而使太陽能電池的光電轉換之效率隨之下降，因此，如 何提高太陽能電池封裝結構整體的散熱效率是亟待解決的問題。 3 M362979 【新型内容】 本創作之主要目的係在提供一種具散熱功能之太陽能電池封裝結 構及其散熱金屬板，其係由—氮化爾料均自塗佈於散熱金屬板表面 以增加空氣的接觸面積’可提高散熱效率，並兼具散熱金屬板避免氧 化的保護功效之太陽能電池封裝結構。 本創作之另一目的係在提供一種應用於聚光型太陽倉色電池封裝結 構之氮化蝴材料，而氮化硼材料具有優良的熱傳導(c〇nducti〇n)、熱輻 射(Rad旧tion)、耐高溫、抗氧化、絕緣、抗酸鹼及化學安定等特性， 其可改善因熱能堆積而使太陽能電池的光電轉換效率差的問題，進而 β 延長太陽能電池之使用壽命。 為達上述目的，本創作所揭露之具散熱功能之太陽能^電池封裝結 構’其包含-陶£基板、-太陽能晶片及-散熱純。太陽能晶片設 置於陶甍基板之上層，散熱銘板設置於陶兗基板之下層，而散熱銘板 之下表面係塗佈一氮化硼層以增加散熱鋁板的接觸空氣面積，可提高 散熱效率，且散熱銘板之下表面可形成具有較佳的抗氧化效果。 此外，本創作更揭露一種太陽能電池封裝結構之散熱金屬板，其 包含一金屬基板，一氮化硼層係塗佈於金屬基板上，其中，金屬基板 _ 之材料係為銘或銅或銅、錄混合之材料。 底下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本 創作之目的、技術内容、特點及其所達成之功效。 【實施方式】 以下將參照相關圖式，說明依本創作實施例之具散熱功能之太陽 月έ電池封裝結構及其散熱金屬板，為使便於理解，下述實施例中之相 ‘ 同元件係以相同之符號標示來說明。 如第一圖所示，其係為本創作之太陽能電池封裝結構之散熱金屬 板之實施例示意圖。太陽能電池封裝結構之散熱金屬板包含一金屬基 板11及一氮化硼層12，其中，金屬基板11之材料係為鋁或銅或銅、 4 M362979 鎳混合之材料，氮化硼層12係由氮（Nitrogen)和硼（Boron)兩種 非金屬元素結合而成，其結晶具有高熱傳導性、高熱輻射、可耐彳8〇〇 C高溫（真空狀態可耐300CTC高溫）、抗氧化、具有絕緣效果、抗強 酸強鹼及化學安定等特性，當氮化硼層12均勻塗佈於金屬基板彳彳表 面上時’可增加金屬基板11表面與空氣接觸的表面積，利用氮化硼層 12之高熱傳導及高熱輻射之特性，有效使金屬基板彳彳之熱源散逸於 空氣中，藉以提高散熱效率。 此外，氮化硼層12具有絕緣之特性，當氮化硼層12塗佈於金屬 基板11表面上時，可有效的阻隔金屬基板1彳表面與空氣的接觸，可 使金屬基板11避免氧化的保護功效。 其中’金屬基板11以散熱銘板為例說明，如第二圖所示，其係為 具散熱功能之太陽能電池封裝結構之實施例示意圖，其係應用於聚光 型太陽能發電模組（Solar Concentration Photovoltaic Module)。太陽 能電池封裝結構包含陶瓷基板21、太陽能晶片22、散熱紹板23及氮 化棚層24。 太陽能晶片22藉由一錫膏（solder)作為導電導熱接著層,以 接者於陶資*基板21之上層’而陶免基板21係用以承載太陽能晶片 22。太陽能晶片22係以3-5族材料為主體，即門得列夫週期表瓜a及 VA族元素或Si元素所構成·一元或多疋的單晶或複晶物質，其較佳者 為砷化鎵(Gallium arsenide，GaAs)、砷鋁化鎵(Gallium Aluminum Arsenide，GaAIAs)或磷化銦（Indium Phosphide,InP)。太陽能晶片 22上包覆有一透明矽膠或一低反射率材料作為保護層26,用以保護太 陽能晶片22及其電極，且可防止太陽能晶片22受外在環境的干擾、 污染及溼度影響。 太陽能晶片22係與一聚光透鏡27相對應，而保護層26係讓聚 光透鏡27所聚集的光線得以順利通過，並聚焦於下方的太陽能晶片 22上以吸收聚光透鏡之入射光，並將入射光轉換為一電能輸出。其 中，聚光透鏡27係為一菲涅爾透鏡(Fresnel Lenes)，其較佳的的聚光 M362979 倍數為2χ〜1000χ，焦距為immHOOcm。 散熱銘板23之上表面係設置於陶竟基板21之下層，散献銘板23 具有導熱之特性’由於太陽能晶片22進行電能轉換時，由於材料 的光譜吸收能力的限制，並無法百分之百將入射光轉換成電能輸出， 使進入太陽能晶片22内多餘的能量，將形成熱能围積在太陽能晶片 22中’而造成溫度上升。因此，散熱銘板23可供太陽能晶片2 生之熱能導出’以達到散熱功效。 然在聚光條件下’整體的太陽能電池封裝結構之溫度會隨著聚光 •倍率越高而上升，太陽能晶片22的溫度隨之升高，而散熱銘板23之 •熱導率係200 W/m . K，無法適度的將多餘的熱能導出；換言之，太 陽能晶片22的光電轉換之效率將會隨之下降。目此，本創作於散熱銘 板23之下表面係均勻塗佈一氮化砸24，氮化爾24之熱導率係 25〇〜3_//m · Κ ’其可以增加散熱銘板23下表面與空氣的接觸面 積，並將散熱銘板23所囤積的熱能導出於空氣中，由外在冷空氣冷卻 散熱’當熱傳導的速率大於熱能輸出的功率時，即可有效降低散^銘 板23之溫度，藉以提高散熱效率。進而可避免散熱銘板&因與空氣 接觸而氧化的問題，以有效達到散熱鋁板23之保護功效，且可提升太 陽能晶片22的光電轉換效率及其使用壽命。 験接續’如第二圖所示’其係為本創作之氮化硼塗佈前後之散熱溫 度示意圖。太陽能晶片隨著太陽光照射時間越長，吸收聚光透鏡入射 光之太陽能晶片溫度隨之升高，散熱鋁板的溫度亦隨之升高。當散熱 鋁板(Alum丨num Heat Sink)23未塗佈氮化删（hbn)材料時，二埶: -板經由太陽光照射時間〇分鐘（min)至42分鐘（min) _，其相 •對溫度係由約3G°C隨之升高至約6〇。〇當散熱贿23塗佈有氮;匕硼 材料時’散熱鋁板經由太陽光照射時間〇分鐘至42分鐘期間，立 溫度係由約_之升高至約驚散熱銘板未塗佈材料2 佈有氮化硼材料之溫度差約1〇t，藉以提高散熱效率。 以上所述之實施例僅係為說明本創作之技術思想及特點，其目的 6 M362979 在使熟習此項技藝之人士能夠瞭解本齡之内容並據以實施，當不能 以之限林創作之專利翻，即大凡依本創作所揭狄糈 等變化或修飾’仍應涵蓋在本創作之專利範圍内。 均 【圖式簡單說明】 第一圖為本創作之散熱金屬板之結構剖視圖。 =二圖為本創作之太陽能電池聰^之結構剖視圖 第三圖為本創作之氮化峨健後分熱意圖 【主要元件符號說明】 金屬基板 12氤化硼層 21陶瓷基板 22太陽能晶片 23散熱鋁板 24氮化硼層 25導電導熱接著層 26保護層 27聚光透鏡M362979 V. New description: [New technology field] This creation is related to a kind of solar cell with heat dissipation function _ structure and genus plate, especially refers to a kind of solar cell with nitriding cloth and hot metal plate Package structure. Door ‘,,, efficiency 【Previous technology With the advancement of human life, the demand for energy is getting higher and higher. However, the energy contained in the earth will be depleted, and the renewable energy of each (fourth) generation will develop under this circumstance. Among them, solar energy is the solar cell of the fine semi-conductive material, which can convert the light energy. Into electrical energy. Taking the concentrating solar cell package structure as an example, it is different from the traditional panel type electric ground package structure, mainly for the ΙΠ-V group multi-junction compound semiconductor solar cell, and has the advantage of heat resistance, in hundreds of times (four) 4g7% photoelectric conversion efficiency can be achieved at the light ratio. However, when the (four) _ can be used to carry out the battery, due to the material's own spectrum of absorption (four) force, and the new one hundred percent will be relied on the power output. Therefore, the excess energy in the solar cell is not reflected or penetrated, or the formation of thermal energy accumulates in the battery towel causing the temperature of the component to rise. # When the temperature rises, the probability of the production of the carrier will increase, but the temperature rise will cause the dark current of the electric axis to rise a lot, but the battery conversion efficiency will decrease. In the solar cell package structure, the heat dissipation path generally has two ways, one is that the solar cell is directly radiated to the outside air through the package surface, and the other is the solder ball or the lead frame in the package structure. The heat is transferred to the board, and the heat is transferred to the outside by the board. Under the fine and silky secrets, the temperature of the battery packaging structure will increase with the higher the polysilicon rate, and the temperature of the solar cell will increase. The thermal energy of the solar cell cannot be self-encapsulated or the circuit board is moderate. The efficiency of photoelectric conversion of the solar cell is reduced as it is transmitted to the outside air towel. Therefore, how to improve the heat dissipation efficiency of the solar cell package structure as a whole is an urgent problem to be solved. 3 M362979 [New Content] The main purpose of this creation is to provide a solar cell package structure with heat dissipation function and a heat dissipating metal plate, which are all coated on the surface of the heat dissipating metal plate to increase air. The contact area 'is improved in heat dissipation efficiency, and has a solar cell package structure that dissipates heat-dissipating metal plates to prevent oxidation. Another object of the present invention is to provide a nitriding butterfly material for a concentrating solar cell color battery package structure, and the boron nitride material has excellent heat conduction (c〇nducti〇n), thermal radiation (Rad old tion ), high temperature resistance, oxidation resistance, insulation, acid and alkali resistance and chemical stability, which can improve the photoelectric conversion efficiency of solar cells due to thermal energy accumulation, and thus prolong the service life of solar cells. In order to achieve the above object, the solar energy battery package structure disclosed in the present invention includes a ceramic substrate, a solar wafer, and a heat dissipation. The solar chip is disposed on the upper layer of the ceramic substrate, the heat dissipation plate is disposed on the lower layer of the ceramic substrate, and the surface of the heat dissipation plate is coated with a boron nitride layer to increase the contact air area of the heat dissipation aluminum plate, thereby improving heat dissipation efficiency and heat dissipation. The surface under the nameplate can be formed to have a better antioxidant effect. In addition, the present invention further discloses a heat dissipating metal plate of a solar cell package structure, which comprises a metal substrate, and a boron nitride layer is coated on the metal substrate, wherein the metal substrate is made of copper or copper. Record mixed materials. The purpose of the present invention, the technical content, the features, and the effects achieved can be more easily understood by the specific embodiments and the accompanying drawings. [Embodiment] Hereinafter, a solar moon battery package structure and a heat dissipation metal plate having a heat dissipation function according to the present embodiment will be described with reference to the related drawings. For ease of understanding, the phase in the following embodiments is the same component. The same symbol is used to indicate. As shown in the first figure, it is a schematic diagram of an embodiment of a heat dissipating metal plate of the solar cell package structure of the present invention. The heat dissipation metal plate of the solar cell package structure comprises a metal substrate 11 and a boron nitride layer 12, wherein the material of the metal substrate 11 is aluminum or copper or copper, 4 M362979 nickel mixed material, and the boron nitride layer 12 is composed of Nitrogen and Boron are combined with two non-metallic elements. The crystallization has high thermal conductivity, high heat radiation, high temperature resistance to 〇〇8〇〇C (vacuum state can withstand 300CTC high temperature), oxidation resistance, and insulation. The effect, the strong acid and alkali resistance and the chemical stability, when the boron nitride layer 12 is uniformly coated on the surface of the metal substrate, can increase the surface area of the surface of the metal substrate 11 in contact with the air, and the boron nitride layer 12 is used. The characteristics of heat conduction and high heat radiation effectively dissipate the heat source of the metal substrate in the air, thereby improving heat dissipation efficiency. In addition, the boron nitride layer 12 has an insulating property. When the boron nitride layer 12 is coated on the surface of the metal substrate 11, the contact between the surface of the metal substrate and the air can be effectively blocked, and the metal substrate 11 can be prevented from being oxidized. Protection effect. The metal substrate 11 is exemplified by a heat-dissipating nameplate. As shown in the second figure, it is a schematic diagram of an embodiment of a solar cell package structure having a heat-dissipating function, which is applied to a concentrating solar power module (Solar Concentration Photovoltaic). Module). The solar cell package structure includes a ceramic substrate 21, a solar wafer 22, a heat dissipation plate 23, and a nitride shed layer 24. The solar wafer 22 is used to carry the solar wafer 22 by a solder paste as an electrically and thermally conductive adhesive layer to the upper layer of the ceramic substrate 21. The solar wafer 22 is mainly composed of a group 3-5 material, that is, a single crystal or a polycrystalline material composed of a gua's periodic table melon and a group VA element or a Si element, preferably arsenic. Gallium arsenide (GaAs), gallium aluminum arsenide (GaAIAs) or indium phosphide (Indium Phosphide, InP). The solar wafer 22 is coated with a transparent silicone or a low reflectivity material as a protective layer 26 for protecting the solar wafer 22 and its electrodes, and preventing the solar wafer 22 from being affected by external environment interference, pollution and humidity. The solar wafer 22 corresponds to a collecting lens 27, and the protective layer 26 allows the light collected by the collecting lens 27 to pass smoothly, and is focused on the lower solar wafer 22 to absorb the incident light of the collecting lens, and Converts incident light into an electrical energy output. The condensing lens 27 is a Fresnel lens. The preferred concentrating M362979 is 2 χ to 1000 倍 and the focal length is immHOOcm. The upper surface of the heat-dissipating plate 23 is disposed on the lower layer of the ceramic substrate 21, and the decorative plate 23 has the property of heat conduction. Due to the limitation of the spectral absorption capacity of the material due to the solar cell 22, it is impossible to convert the incident light 100%. The electrical energy is output so that excess energy entering the solar wafer 22 will form thermal energy in the solar wafer 22, causing a temperature rise. Therefore, the heat sink nameplate 23 can be used to derive the heat energy generated by the solar wafer 2 to achieve heat dissipation. However, under the concentrating condition, the temperature of the whole solar cell package structure will increase as the concentrating rate increases, and the temperature of the solar wafer 22 will increase, and the thermal conductivity of the heat-dissipating plate 23 is 200 W/ m. K, the excess heat energy cannot be appropriately exported; in other words, the efficiency of photoelectric conversion of the solar wafer 22 will decrease. Therefore, the surface of the heat-dissipating plate 23 is uniformly coated with a tantalum nitride 24, and the thermal conductivity of the nitride 24 is 25〇~3_//m · Κ 'which can increase the lower surface of the heat-dissipating plate 23 The contact area of the air, and the heat energy accumulated by the heat dissipation plate 23 is led to the air, and the external cold air cools the heat. When the heat conduction rate is greater than the power output of the heat energy, the temperature of the heat sink 23 can be effectively reduced. Improve heat dissipation efficiency. Further, the problem of oxidation of the heat-insulating nameplate & due to contact with air can be avoided, so as to effectively achieve the protection effect of the heat-dissipating aluminum plate 23, and the photoelectric conversion efficiency and the service life of the solar energy chip 22 can be improved.験Continued as shown in the second figure, which is a schematic diagram of the heat dissipation temperature before and after the boron nitride coating. The longer the solar wafer is irradiated with sunlight, the higher the temperature of the solar wafer that absorbs the incident light from the collecting lens, and the higher the temperature of the heat-dissipating aluminum plate. When the heat-dissipating aluminum plate (Alum丨num Heat Sink) 23 is not coated with a nitriding (hbn) material, the second plate: - the plate is irradiated by sunlight for a period of time min minute (min) to 42 minutes (min) _, the phase The temperature is then raised from about 3G ° C to about 6 〇. 〇 散热 散热 散热 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 The temperature difference of the boron nitride material is about 1 〇t, thereby improving the heat dissipation efficiency. The embodiments described above are only for explaining the technical idea and characteristics of the present invention. The purpose of the present invention is to enable the person familiar with the art to understand the content of the age and implement it according to the patent. Turning, that is, the changes or modifications of the Di, according to the creation of the creation, should still be covered by the scope of this creation. [Simplified description of the drawings] The first figure is a structural cross-sectional view of the heat-dissipating metal plate of the creation. = The second figure is a cross-sectional view of the structure of the solar cell Cong ^ created by the author. The third picture is the intention of the post-heating of the tantalum nitride after the creation. [Main component symbol description] Metal substrate 12 boron nitride layer 21 ceramic substrate 22 solar wafer 23 heat dissipation Aluminum plate 24 boron nitride layer 25 conductive heat conduction layer 26 protective layer 27 concentrating lens