M362572 五、新型說明： 【新型所屬之技術領域】 本創作係有關於一種信號轉換裝置’其係有關於用戶 識別模組（SIM : Subscriber Identify Module)應用’特別 是應用於雙卡結合之領域，以提升方便性。 【先前技術】 隨著企業趨於國際化’商務人士致勝之重要關鍵在 於工作效率，與客戶之間最重要的溝通工具即為行動電 話。對於需要短暫出國的商務人士，為了節省國際漫遊 通話費，必須申請當地電信業者之門號，以便於當地工 作時使用。以往商務人士必須同時攜帶2支手機，或是 不斷更換SIM卡而非常不方便且浪費時間，無論手機業 者或電信業者，皆有推出一機雙卡雙門號之服務，以達 到節省國際電話費用的效益。現行之SIM卡係使用在行 動電話上，儲存使用者之電話號碼、電話薄以及系統資 訊，例如：個人識別碼（PIN code: Personal Identification Number)以及用戶身分、防止盜用或濫用等功能皆藉此 完成，然而由於對行動電話的依賴，且希望SIM卡能結 合近距離無線傳輸(Near Field Communication )功能，例 如：將悠遊卡、信用卡以及門禁卡等功能作結合，此時 SIM所需的容量必須更大。用戶識別應用開發工具 STK(SIM Application Toolkit)是全球行動通訊系統 GSM (Global System for Mobile Communications)的規格 標準之一，主要是定義SIM卡與行動電話之介面及作業 程序標準。亦即，STK是在SIM卡上發展應用服務的標 準介面工具，藉由此工具的開發，SIM卡中的應用程式 能與任何行動電話進行正確之運作。 3 M362572 若干技術已被發展出來’其中之一種技術係將智慧 卡以軟板技術(FPC)構製而成，使用者能夠輕易地將該智 慧卡完全貼合在其它電信業者之SIM卡上，並同時置入 手機。而在該智慧卡上具有一積體電路晶片（jC chip)， 該積體電路晶片中的軟體透過用戶識別應用開發工具 STK(SIM Application Toolkit)標準來實現該 SIM 功能增 強以及相關的加值服務且能自由切換選擇欲使用之門 號。依先前技術，該智慧卡之積體電路晶片係利用覆晶 技術(Flip-chip)附著在前述軟板上，然而須注意到的是， 由於該積體電路晶片之厚度因素，該技術必須加工其它 電h業者之SIM卡，亦即，欲貼合之sim卡必須開一 個開孔，該開口之大小及尺寸規格需與前述積體電路晶 片之大小及尺寸規格相符，以讓前述積體電路晶片之厚M362572 V. New Description: [New Technology Field] This creation is about a signal conversion device that is related to the application of SIM (Subscriber Identification Module), especially in the field of dual card combination. To improve convenience. [Prior Art] As companies become more internationalized, the key to success for business people is productivity, and the most important communication tool with customers is mobile phones. For business people who need to go abroad for a short period of time, in order to save on international roaming charges, they must apply for the local operator's door number for local work. In the past, business people had to carry two mobile phones at the same time, or they were constantly changing SIM cards, which was very inconvenient and time-consuming. No matter whether they were mobile phone operators or telecom operators, they had the service of launching a dual-camera double-door number to save international calls. Benefits. The current SIM card is used on a mobile phone to store the user's phone number, phone book and system information, such as PIN code: Personal Identification Number and user identity, preventing misappropriation or abuse. Completed, however, due to the reliance on mobile phones, and the SIM card can be combined with Near Field Communication, such as the combination of leisure card, credit card and access control card, the required capacity of the SIM must be Bigger. User Identification Application Development Kit STK (SIM Application Toolkit) is one of the specifications of Global System for Mobile Communications (GSM). It mainly defines the interface between SIM card and mobile phone and the standard of operating procedures. That is, STK is a standard interface tool for developing application services on SIM cards. With the development of this tool, the application in the SIM card can operate correctly with any mobile phone. 3 M362572 Several technologies have been developed. One of the technologies is to build a smart card with Soft Board Technology (FPC). Users can easily fit the smart card to the SIM card of other carriers. And put the phone at the same time. And the smart card has a jC chip, and the software in the integrated circuit chip realizes the SIM function enhancement and related value-added service through a user identification application development tool STK (SIM Application Toolkit) standard. And you can freely switch to choose the door number you want to use. According to the prior art, the integrated circuit chip of the smart card is attached to the soft board by flip chip technology. However, it should be noted that due to the thickness factor of the integrated circuit chip, the technology must be processed. The SIM card of other electric operators, that is, the sim card to be attached must open an opening, and the size and size of the opening must conform to the size and size specifications of the integrated circuit chip to allow the integrated circuit Thickness of the wafer
度與該開孔作卡榫式之結合。如此，才能作完全貼合SIM 卡與智慧卡之動作，而這代表前述加工欲貼合之SIM卡 =對SIM卡作出破壞性之動作，這對於後續與發行之電 4業者往後之交易會產生爭議。此種技術對於使用者帶 來許多不方便。 一綜合以上所述，在不破壞SIM卡結構而將智慧卡結 合=SIM卡硬體結構確實有其產業利用性，而基於該等 考量而實施本創作之信號轉換裝置。 【新型内容】 '本創在於提供一種信號轉換裝置，藉由結構尺 寸之匹配料而可在不改變原來之，卡結構而能達 到-機雙卡或新增SIM卡資訊處理功能之目的。 為達到上述目的，本創作提供一種信號轉換裝置， 匕含.一基板，具有一第一表面與一第二表面，該第一 4 M362572 ^面設置包含至少一第一接點與至少一第二接點之一 第一接點區域，該第二表面設置包含至少一第三接點與 至少一第四接點之一第二接點區域，其中，該第一接點 與第三接點有電性連接，且該第二接點與該第/四接點電 f生連接一藉由晶圓級晶片尺寸封裝（WLCSJ)))之積體電 路；其中，該積體電路設置於該第一表面或該第二表面。 為達到上述目的，本創作提供一種信號轉換裝置， 包含.一基板，具有一第一表面與一第二表面，該第一 表面設置包含至少一第一接點與至少一第二接點之一 第一接點區域，該第二表面設置包含至少一第三接點與 至少一第四接點之一第二接點區域，其中，該第一接ς 與第三接點有電性連接，且該第二接點與該第四接點電 I1生連接藉由覆晶薄膜製程(COF)之積體電路；其中， 該積體電路設置於該第一表面或該第二表面。八 【實施方式】 參，第一圖，第一圖係本創作之一實施例之正面 圖。如第一圖所示之一種實施例，本創作信號轉換裝置 用以轉換SIM/USIM卡與手機間之至少部分信號，該俨 號轉換裝置包含-基板u，基板η係利用軟性印刷^ 路板(軟板)技術構製而成，且基板11之一隅具有一 防呆設計。在一較佳實施例中，基板u之外觀設計與 欲貼合之SIM卡相同用以完全黏貼於SIM卡。基板^ 之一第二表面（正面）設置一第二接點區域11〇，第二接點 區域110包含至少一第三接點11〇1與至少一第四接點 1102，且該第三接點hoi與該第四接點11〇2係用以電 性連接至一可攜式通訊裝置（例如··行動電話）。在本創 5 M362572 作的種實施例中，第二接點區域係符合ISO 7816 國際標準，IS〇 7816國際標準包含八個接點（接點 l.Vcc、接點2.RST、接點3.CLK、接點4.RFU、接點 5.GND、接，點 6.Vpp、接點 7 1/〇、接點 8 rfu)，其中， 接點l.Vcc與接點5.GND可視為第三接點11〇1 ;接點 7.1/0可視為第四接點11〇2。 凊同時參考第二圖，第二圖係第一圖實施例之反面 圖。基板11之一第一表面（反面）設置一第一接點區域 ，第一接點區域21包含至少一第一接點22與至少一 第—接點23，其中，該第一接點22與第三接點1101有 電，連接。在本創作的一種實施例中，第一接點區域21 亦符合ISO 7816國際標準，且第一接點區域21與第二 接點區域11〇之各接點彼此在位置上有對應，其中，接 點hVcc與接點5.GND可視為第一接點22 ;接點7.1/0The degree is combined with the opening. In this way, the SIM card and the smart card can be fully integrated, and this means that the SIM card to be processed in the foregoing processing is destructive to the SIM card, which will be followed by the subsequent transaction with the issuing company. Controversy. This technique is inconvenient for the user. As described above, the smart card is combined without destroying the SIM card structure = the SIM card hardware structure does have industrial applicability, and the signal conversion device of the present invention is implemented based on such considerations. [New Content] 'This is to provide a signal conversion device. With the matching material of the structure size, the card structure can be used to achieve the purpose of the dual card or the SIM card information processing function. In order to achieve the above object, the present invention provides a signal conversion device, comprising: a substrate having a first surface and a second surface, the first 4 M362572 surface setting comprising at least a first contact and at least a second a first contact area of the contact, the second surface is disposed to include at least one third contact and at least one second contact area, wherein the first contact and the third contact have Electrically connected, and the second contact is electrically connected to the fourth/fourth contact by an integrated circuit of a wafer level wafer size package (WLCSJ)); wherein the integrated circuit is disposed on the first a surface or the second surface. In order to achieve the above object, the present invention provides a signal conversion device, comprising: a substrate having a first surface and a second surface, the first surface disposed to include at least one of a first contact and at least one second contact a first contact area, the second surface is disposed to include at least one third contact and at least one second contact, and the first contact is electrically connected to the third contact, And the second contact is electrically connected to the fourth contact circuit I1 by an integrated circuit of a flip chip process (COF); wherein the integrated circuit is disposed on the first surface or the second surface. Eight Embodiments The first diagram and the first diagram are front views of an embodiment of the present creation. In an embodiment as shown in the first figure, the creative signal conversion device is configured to convert at least part of a signal between the SIM/USIM card and the mobile phone, the nickname conversion device includes a substrate u, and the substrate η is a flexible printed circuit board. The (soft board) technology is constructed, and one of the substrates 11 has a foolproof design. In a preferred embodiment, the substrate u is designed to be completely attached to the SIM card in the same manner as the SIM card to be attached. a second contact area 11〇 is disposed on a second surface (front surface) of the substrate ^, and the second contact area 110 includes at least a third contact 11〇1 and at least a fourth contact 1102, and the third connection The point hoi and the fourth contact 11 〇 2 are electrically connected to a portable communication device (for example, a mobile phone). In the embodiment of the 5 M362572, the second contact area conforms to the ISO 7816 international standard, and the IS〇7816 international standard includes eight contacts (contact l.Vcc, contact 2.RST, contact 3). .CLK, contact 4.RFU, contact 5.GND, connection, point 6.Vpp, contact 7 1/〇, contact 8 rfu), where the contact l.Vcc and the contact 5.GND can be regarded as The third contact 11〇1; the contact point 7.0/1 can be regarded as the fourth contact 11〇2. Referring to the second drawing, the second drawing is the reverse view of the first embodiment. A first contact area is disposed on a first surface (reverse surface) of the substrate 11. The first contact area 21 includes at least one first contact 22 and at least one first contact 23, wherein the first contact 22 is The third contact 1101 has electricity and is connected. In an embodiment of the present invention, the first contact region 21 also conforms to the ISO 7816 international standard, and the contacts of the first contact region 21 and the second contact region 11 are corresponding to each other in position. Contact hVcc and contact 5.GND can be regarded as the first contact 22; contact 7.0/1
可視為第二接點23。此時，參考第二圖所示，在一種實 ，例中’ ~晶圓級晶片尺寸封裝（WLCSP)或覆晶薄膜製 程（C0F)之積體電路12〇設置於該第二表面（正面），且設 置之位置介於第二接點區域110與具有防呆設計之隅 19〇門5亥第二接點與該第四接點電性連接積體電路 2積體電路12G係轉換該第二接點23與該第四 接i02之間的信號(例如：資料信號）。 ，同時參考第三圖，第三圖係第_圖實施例與一 V f Kit側视圖。該第一接點22與該第二接點23係用 1電性連接至—SIM卡30。此外，該第一表 狀 m係佈上黏性材料作為與該職卡％黏貼之用， 便及弟一表面可對應黏貼於該SIM卡30。 作另2第四圖及第五目，第四圖及第五圖分別是本創 貫施例正面圖與反面圖。在一種實施例中，積體 6 M362572 電路12G設置於該第—表面（反面），且設入^ 第-接點區域21與具有防呆設計之隅130 ::置;: 一接點與该第四接點電性連接積體電路⑽，積 電？ 12 0係轉換該第二接點2 3與該第四接點η、〇 ，唬(例如:貧料信號)。請同時參考 ； 第四圖實施例與-SIM卡之侧視圖。ΰ “圖係 第七圖係本創作信號轉換裝置中晶 封裝之積體電路側視圖。Β圓幼s 、曰曰片尺寸 k, Γ圖 固晶片尺寸封裝（Wafer Level Chip Scale Package, WLCSP)^^^ n〇 裝(WLCSP)製程技術製 路，使產品厚度㈣，更由於晶粒與基板的結合方式， 所以可傳送更快速的訊號。在本創作—較佳實施例中， 積體電路120的表面具有一覆蓋層（c〇ver㈣er CVL)12(H ’而積體電路12〇包含基板12〇2、電路結構 層1203以及錫球1204。在一較佳實施例中，積體電路 120厚度約為350μιη，其中覆蓋層1201厚度約為4〇μηι、 基板1202與電路結構層1203加總之厚度約為26〇μηι、 錫球厚度約為50μπι。 第八圖係本創作信號轉換裝置中一藉由覆晶薄膜 製程之積體電路部分側視圖。覆晶薄膜製程（Qlip 〇η Flex，or，Chip On Film )係運用軟質承載板作封裝晶片載 體將晶片與軟性基板電路接合的技術，或單指未封農晶 片的軟質承載板。積體電路120的表面可具有或可不具 有一覆蓋層（Cover layer，CVL)1205，在本創作一較佳實 施例中，積體電路120包含基板1206、電路結構層 1207'保護層1208、鋁墊1209、底部凸塊金屬化(Und二 Bump Metallization)1210、金凸塊(Gold Bump)l21i。在 本創作一較佳實施例中，積體電路120在不具有覆蓋層 7 M362572 1205時之厚度約為280μπι。 綜上所述，本創作之在不改變原來之SIΜ卡結構而 完全靠黏貼而結合之SIM卡硬體結構，對於使用者而言 該設計具有友善性及方便性。此外，本創作之信號轉換 裝置不限於應用於SIM卡，亦可應用於USIM卡。 在詳細說明本發明的較佳實施例之後，熟悉該項技 術人士可清楚的瞭解，在不脫離下述申請專利範圍與精 神下進行各種變化與改變，且本發明亦不受限於說明書 中所舉實施例的實施方式。 M362572 【圖式簡單說明】 第一圖係本創作之一實施例之正面圖。 第二圖係第一圖實施例之反面圖。 第三圖係第一圖實施例與一 SIM卡之側視圖。 第四圖係本創作之另一實施例之正面圖。 第五圖係第四圖實施例之反面圖。 第六圖係第四圖實施例與一 SIM卡之側視圖。 第七圖係本創作中一藉由晶圓級晶片尺寸封裝之積體 電路側視圖。 第八圖係本創作中一藉由覆晶薄膜製程之積體電路部 分側視圖。 【主要元件符號說明】 11 基板 110 弟二接點區域 120 積體電路 130 防呆設計之隅 1101 第三接點 1102 第四接點 20 點狀區域 21 第一接點區域 22 第一接點 23 第二接點 30 SIM卡 1201 覆蓋層 1202 基板 1203 電路結構層 9 M362572 1204 錫球 1205 覆蓋層 1206 基板 1207 電路結構層 1208 保護層 1209 鋁墊 1210 底部凸塊金屬化 1211 金凸塊It can be regarded as the second contact 23. At this time, referring to the second figure, in one embodiment, the integrated circuit 12 of the wafer level wafer size package (WLCSP) or the flip chip process (C0F) is disposed on the second surface (front side). And the position is set between the second contact region 110 and the second contact with the foolproof design, the second contact, and the fourth contact electrically connected to the integrated circuit 2, and the integrated circuit 12G converts the first A signal between the two contacts 23 and the fourth connection i02 (for example, a data signal). Referring to the third figure, the third figure is a side view of the first embodiment and a V f Kit. The first contact 22 and the second contact 23 are electrically connected to the SIM card 30 by one. In addition, the adhesive material on the first surface of the m-shaped cloth is used as the adhesive for the service card, and the surface of the younger one can be attached to the SIM card 30 correspondingly. For the other two, the fourth and fifth figures, the fourth and fifth figures are the front view and the reverse side of the present embodiment, respectively. In one embodiment, the integrated body 6 M362572 circuit 12G is disposed on the first surface (reverse surface), and is disposed in the first contact region 21 and has a foolproof design ::130::; a contact and the The fourth contact is electrically connected to the integrated circuit (10), and the power is accumulated? The 12 0 system converts the second contact 2 3 with the fourth contact η, 〇, 唬 (for example, a poor material signal). Please also refer to the same; the fourth figure embodiment and the side view of the -SIM card. ΰ “The seventh diagram of the system is the side view of the integrated circuit of the crystal package in the creation signal conversion device. The round s, the size k, and the Wafer Level Chip Scale Package (WLCSP)^ The ^^ n armored (WLCSP) process technology circuit enables the thickness of the product (4), and because of the combination of the die and the substrate, a faster signal can be transmitted. In the present invention, in the preferred embodiment, the integrated circuit 120 The surface has a cover layer (c〇ver (four) er CVL) 12 (H ' and the integrated circuit 12 〇 includes a substrate 12 〇 2, a circuit structure layer 1203, and a solder ball 1204. In a preferred embodiment, the integrated circuit 120 thickness The thickness of the cover layer 1201 is about 4〇μηι, the thickness of the substrate 1202 and the circuit structure layer 1203 is about 26〇μηι, and the thickness of the solder ball is about 50μπι. The eighth figure is a borrowing of the signal conversion device of the present invention. A side view of a part of the integrated circuit process of the flip chip process. The Qlip Flex Flex, or Chip On Film is a technique for bonding a wafer to a flexible substrate circuit using a flexible carrier as a package wafer carrier, or a single Unsealed The surface of the integrated circuit 120 may or may not have a cover layer (CVL) 1205. In a preferred embodiment of the present invention, the integrated circuit 120 includes a substrate 1206 and a circuit structure layer. 1207' protective layer 1208, aluminum pad 1209, under bump metallization 1210, gold bump l21i. In a preferred embodiment of the present invention, integrated circuit 120 does not have coverage The thickness of layer 7 M362572 1205 is about 280μπι. In summary, the SIM card hardware structure of the creation which is completely bonded and adhered without changing the original SI Leica structure, is friendly to the user. Moreover, the signal conversion device of the present invention is not limited to application to a SIM card, and can also be applied to a USIM card. After a detailed description of the preferred embodiment of the present invention, those skilled in the art can clearly understand that Various changes and modifications may be made without departing from the spirit and scope of the invention, and the invention is not limited to the embodiments of the embodiments set forth in the specification. M362572 [Simple Description] First The front view of one embodiment of the present invention. The second figure is the reverse view of the first embodiment. The third figure is a side view of the first embodiment and a SIM card. The fourth figure is another of the present creation. The front view of the embodiment. The fifth figure is the reverse view of the fourth embodiment. The sixth figure is the side view of the fourth embodiment and a SIM card. The seventh figure is a wafer level wafer in the present creation. Side view of the integrated circuit of the size package. The eighth figure is a side view of an integrated circuit portion of the present invention by a flip chip process. [Description of main component symbols] 11 Substrate 110 Dipole area 120 Integrated circuit 130 Anti-slipping design 隅1101 Third contact 1102 Fourth contact 20 Dot area 21 First contact area 22 First contact 23 Second contact 30 SIM card 1201 Cover layer 1202 Substrate 1203 Circuit structure layer 9 M362572 1204 Tin ball 1205 Cover layer 1206 Substrate 1207 Circuit structure layer 1208 Protective layer 1209 Aluminum pad 1210 Bottom bump metallization 1211 Gold bump