M360536 五、新型說明： 【新型所屬之技術領域】 本創作有關於一種電容式感測裝置，尤指一種可利用 ’ CMOS製程大量製造並藉此降低生產成本之電容式感測裝 ，置。 【先前技術】 請參閱第1圖，係習用電容式感測裝置之構造剖面 圖。如圖所示，電容式感測裝置100係應用於微機電麥克 風領域’其主要構造係包括有一石夕基板11、—定位層13、 一絕緣層15、一振膜17及一背板19。 其中石夕基板11之上表面設有該定位層13，並於預設 位置上設有一開口部111。定位層13上之兩侧設置有一絕 緣層15，而開口部ill上方設置有一振膜η，振膜I?的 兩侧端將固定於絕緣層15中。 背板19設置於振膜17上，其外圍包覆有保護層191， 具有複數個通孔193，而在背板19與絕緣層15間預留兩 個凹部區，以在凹部區上形成金屬銲墊171並電性連接至 振膜17。 再者，背板19與振膜17間具有一空腔部113，振膜 Π將感測聲音訊號而在空腔部113與開口部U1間產生共 振，並將感測的結果透過金屬銲墊171以傳送至晶片元件 (未顯示）進行運算處理。 習用電容式感測裝置100雖可達到感測聲音之效果， 3 M360536 然振膜17之兩侧端往往栓住在裝置100的内部構造上， 例如：絕緣層15、背板19及定位層13上，則振膜17易 產生内應力，此内應力將會影響到電容式感測裝置100感 -測的能力。 【新型内容】 本創作之主要目的，在於提供一種電容式感測裝置， 其主要將振膜卡設在電容式感測裝置的空腔部中，以成為 籲一懸浮式振膜，振膜將可完全形變，以避免内應力的產 生，而影響到聲音訊號感測的準確性。 本創作之次要目的，在於提供一種電容式感測裝置， 尚可增設另一金屬層而與原金屬層形成一參考電容，並可 進一步強化裝置之結構強度。 本創作之又一目的，在於提供一種電容式感測裝置， 其振膜可為一金屬材料、一 ^夕材料或一導電材料所製作而 成，藉此增加振膜材料選擇上的多樣化。 • 本創作之又一目的，在於提供一種電容式感測裝置， 其主要係利用矽材料作為犧牲層並在製作時包覆振膜的 外圍，則在電容式感測裝置主體構造完成後，去除掉犧牲 層，即可使得振膜卡設於電容式感測裝置的空腔部中。 本創作之又一目的，在於提供一種電容式感測裝置， 其使用CMOS製程方式，將利於電容式感測裝置整合至積 體電路中。 為達成上述目的，本創作提供一種電容式感測裝置， 4 M360536 其主要構造包含有：一基板，其上表面設有一定位層，並 於預設位置上設有一開口部；一第一絕緣層，設置在定位 層上，第一絕緣層與定位層間形成兩侧凹型態樣之一空腔 -部，一振膜將卡設在空腔部内；及一第一金屬層，設在第 一絕緣層上方，設有複數個通孔，並且振膜設於通孔與開 % 口部間的相對位置上。 本創作另提供一種電容式感測裝置，其構造包括有： 一基板，其上表面設有一定位層，並於預設位置上設有一 • 第一開口部；一第一矽材料層，設於定位層上；一第一氧 化層，設於第一石夕材料層上，並且第一氧化層、第一石夕材 料層及定位層間設置有複數個通孔，而第一氧化層將包覆 設置在定位層上之第一矽材料層；一第一絕緣層，設置於 第一氧化層上；及一第二絕緣層，設置於第一絕緣層上， 並於預設位置上設有一第二開口部，第二絕緣層與第一絕 緣層間形成兩側凹型態樣之一空腔部，一振膜將卡設在空 腔部内，並且振膜設於第二開口部與通孔間的相對位置 •上。 【實施方式】 首先，請參閱第2 A圖至第2 G圖，係分別為本創作 電容式感測裝置一較佳實施例之製作步驟示意圖。如圖所 示，本實施例之製作方法主要係先提供一基板21，在基板 21之上表面沈積一定位層22，並於該定位層22上沉積一 第一矽材料23，再於第一矽材料23上沉積、蒸鍍或濺鍍 5 M360536 一導電層24，如第2A圖所示。 其中，該基板21可為一矽基板，該定位層22可選擇 為一氮化石夕層及一二氧化石夕層之其中之一，該第一石夕材料 -23可選擇為一單晶矽材料或多晶矽材料或一非晶矽材料 ，所製成，而本實施例之導電層24可為一金屬材料或一導 電材料。 導電層24沈積完成後，蝕刻定位層22兩侧邊上之第 一矽材料層23及導電層24,以在定位層22兩侧上分別形 • 成一第一缺口部221，如第2 B圖所示。 於該導電層24上沉積一第二矽材料層25，接著，蝕 刻該導電層兩側上的該第二矽材料層25，以分別形成一第 二缺口部241，如第2 C圖所示。 沉積一第三矽材料層26以包覆第一矽材料層23、導 電層24及第二矽材料層25，並覆蓋該第二缺口部241以 形成一第三缺口部261，如第2 D圖所示。其中，第二矽 I材料25及第三矽材料層26可選擇為一單晶矽材料、多晶 矽材料或一非晶矽材料所製成。 沉積一第一絕緣層27於該定位層22上並覆蓋該第一 缺口部221及該第三缺口部261，並且該第一絕緣層27為 一二氧化石夕層，如第2 E圖所示。 沉積、蒸鍍或濺鍍一第一金屬層28於第一絕緣層27 及第三矽材料層26上，並在第一金屬層28中蝕刻複數個 通孔281至第三矽材料層26，再者，將該基板21之預設 位置蝕刻至定位層22，以形成一開口部211，同時蝕刻去 6 M360536 除該開口部211上方之定位層22，如第2 F圖所示。 蝕刻去除該第一矽材料層23、該第二矽材料層25及 該第三矽材料層26，以形成一空腔部213，則導電層24 ，將卡設在空腔部213内，並設於通孔281與開口部211間 .的相對位置上，以成為一懸浮式振膜，如此以完成本實施 例之電容式感測裝置200的製作流程，如第2 G圖所示。 再者，振膜24將與第一金屬層28形成一感測電容， 並依振膜24之振動或變形產生的電容量變化而由一感測 ♦電路進行感測。 本實施例之電容式感測裝置200係利用矽材料 23/25/26作為犧牲層，並在製作時包覆振膜24的外圍， 則在電容式感測裝置200主體構造完成後，去除掉犧牲層 23/25/26,即可使得振膜24卡設於電容式感測裝置200 的空腔部213中，如此結構據以實施，振膜將可在空腔部 213中完全形變，以避免内應力的產生，而影響到電容式 I感測裝置2 0 0感測聲音訊號的準碟性。 請參閱第3A圖至第3 C圖，係分別為本創作電容式 感測裝置又一實施例之製作步驟示意圖。 本實施例之前段製作步驟與第2 A圖至第2 E圖所 示步驟相同，其主要在於第2 E圖之步驟後，進一步在第 一金屬層2 8上依序沉積、蒸鑛或藏锻一第二絕緣層2 9及 一第二金屬層30，並且在該第二絕緣層29中鑿設有複數 個連接部291，以使得第二金屬層30電性連接至第一金屬 層28，如第3A圖所示。 7 M360536 然後，在該第二金屬層30之預設位置進行蝕刻，以 形成複數個連接至第三矽材料層26之通孔281，再者，將 該基板21之預設位置蝕刻至定位層22，以形成一開口部 -211，同時蝕刻去除該開口部211上方之定位層22，如第 .3 B圖所示。 由通孔2 81或開口部211處倒入钱刻液，以姓刻去除 該第一矽材料層23、該第二矽材料層25及該第三矽材料 層26，以形成一空腔部213，藉此導電層24將卡設在空 籲腔部213内，以成為一懸浮式振膜，並完成本實施例之電 容式感測裝置200的製作流程。 其中，振膜24將與第一金屬層28組成為一感測電容， 並依振膜24之振動或變形產生的電容量變化而由一感測 電路進行感測，而第一金屬層28將與第二金屬層30組成 為一參考電容，以供感測電路參考應用。本實施例電容式 感測裝置200藉由參考電容的增設，感測電路將比對感測 $電容及參考電容間的電容值以得知感測電容實際的電容 變化量，致使以得到更準確的感測結果。 當然，第二絕緣層29及第二金屬層30亦可設計上的 需求而組成為一遮蔽層，或者單純成為一強化電容式感測 裝置200的背板構造。 請參閱第4A圖及第4F圖，係分別為本創作電容式 感測裝置又一實施例之製作步驟示意圖。如圖所示，本實 施例之製作方法首先提供一基板41，在基板41之上表面 沈積一定位層42，並於定位層42上沉積一第一矽材料 8 M360536 4 3，再钱刻定位層4 2兩侧邊上之該第一石夕材料層4 3，以 在定位層42兩側邊上分別形成一第一缺口部421，如第4 A圖所示。其中，該基板41可為一石夕基板，該定位層42 •可選擇為一氮化矽層及一二氧化矽層之其中之一，該第一 、碎材料43可選擇為一早晶砍材料或多晶硬材料或一非晶 矽材料所製成。 沉積一第一氧化層44以包覆該第一矽材料層43，相 對於該第一矽材料層43之位置以在該第一氧化層44上形 •成一第二矽材料層45，沉積一第二氧化層46以包覆該第 二矽材料層45，沉積一第三矽材料層47於該第二氧化層 46上，並蝕刻掉第二氧化層46兩側邊上之第三矽材料層 47，以在第二氧化層46兩侧邊上形成一第二缺口部461， 如第4 B圖所示。 沉積一第四矽材料層48以包覆第三矽材料層47、第 一氧化層44及第二氧化層46，並覆蓋該第二缺口部461 鲁以形成一第三缺口部481，如第4 C圖所示。此外，本實 施例之第二矽材料層45、第三矽材料層47及第四矽材料 層48係可選擇為一單晶矽材料或多晶矽材料或一非晶矽 材料所製成。 沉積一第一絕緣層49於定位層42上並覆蓋第一缺口 部421及第三缺口部481，而後，沉積、蒸鍍或濺鍍一第 一金屬層50於第一絕緣層49及第四矽材料層48上，再 於第一金屬層50中蝕刻複數個通孔501至該第四矽材料 層48，並將該基板41之預設位置蝕刻至該定位層42，以 9 M360536 形成一開口部411，同時蝕刻去除開口部411上方之定位 層42，如第4D圖所示。 蝕刻去除第一矽材料層43、第三矽材料層47及第四 •石夕材料層4 8，如第4 E圖所示。 、 蚀刻去除第一氧化層44及第二氧化層46，以形成一 空腔部413，則第二矽化層45將餘留卡設在空腔部413 内，以成為一懸浮式振膜’並完成本實施例之電容式感測 裝置400的製作流程，如第4 F圖所示。 > 相較於電容式感測裝置200，本實施例電容式感測裝 置400使用另一製作方法，如此電容式感測裝置400之振 膜45將可採用一矽材料所製作而成，藉此以增加振膜材 料選擇上的多樣化。 請參閱第5圖，係為本創作電容式感測裝置一實施例 之結構不意圖。同理’電容式感測裝置400亦可依序增設 一第二絕緣層51及一第二金屬層52於該第一金屬層50 >上，並在第二絕緣層51鑿設有複數個連接部511，以使得 該第二金屬層52電性連接該第一金屬層50，並且第一金 屬層50上之通孔501將延伸貫穿第二絕緣層51及第二金 屬層52。 如此，在電容式感測裝置400上將可得到振膜45與第 一金屬層5 0所組成的感測電容，及第一金屬層5 0與第二 金屬層52所組成的參考電容。而感測電路比對感測電容 及參考電容間的電容值以得知感測電容實際的電容變化 量，致使以得到更準確的感測結果。 10 M360536 請參閱第6A圖至第6G圖，係分別為本創作電容式 感測裝置又一實施例之製作步驟示意圖。如圖所示，本實 施例之製作方法首先提供一基板61，並於該基板61之上 •表面形成一定位層6 2及沉積一第一石夕材料層6 3，如第6 -A圖所示。 其中，該基板61可為一矽基板，該定位層62可選擇 為一氮化矽層及一二氧化矽層之其中之一，該第一矽材料 63可選擇為一單晶矽材料或多晶矽材料或一非晶矽材料 籲所製成。 第一矽材料層63沈積完成後，在第一矽材料層63之 預設位置上蝕刻形成複數個蝕刻孔631，該蝕刻孔631並 延伸至部份的定位層62上，而後，再於各蝕刻孔631之 侧邊及第一石夕材料層63上形成一第一氧化層64，如第6 B圖所示。 沉積一第二矽材料層65於該第一矽材料層63上，並 •覆蓋各蝕刻孔631，並蝕刻該第一氧化層64兩侧邊上之該 第二矽材料層65，以在該第一氧化層64上形成一第一缺 口部641，如第6 C圖所示。 沉積一第一絕緣層66於第一氧化層64上並覆蓋第一 缺口部641，沉積一第三矽材料層67於該第一絕緣層66 及該第二石夕材料層6 5上，如第6 D圖所示。 沉積、蒸鍍或濺鍍一導電層68於第三矽材料層67上， 再蝕刻導電層68及第三矽材料層67之兩侧邊，以在第一 絕緣層66上形成一第二缺口部661，並沉積一第四矽材料 11 M360536 層69以包覆導電層68及第三矽材料層67,如第6 E圖所 示。 沉積一第二絕緣層70以包覆該第四矽材料層69並覆 •蓋該第二缺口部661，再於該第二絕緣層70之預設位置蝕 .刻至該第四矽材料層69，以形成一第二開口部701，同時 在該基板61之預設位置蝕刻至該定位層62，以形成一第 一開口部611，如第6 F圖所示。 再者，如上所述之第一絕緣層66及第二絕緣層70可 •為一二氧化矽層，而導電層68為一金屬材料或一導電材 料所製作而成，而第二矽材料層65、第三矽材料層67及 第四矽材料層69可選擇為一單晶矽材料或多晶矽材料或 一非晶矽材料所製成。 接續，蝕刻去除該第一開口部611與各蝕刻孔631間 之該定位層62，以形成複數個通孔613，並蝕刻去除第二 矽材料層65、第三矽材料層67及第四矽材料層69，以形 鲁成一空腔部615，則導電層68卡設在空腔部615内，並設 於通孔613與第二開口部701間的相對位置上，以成為一 懸浮式振膜，如此以完成本實施例之電容式感測裝置600 的製作流程，如第6 G圖所示。 本貫施例之電容式感測裝置6 0 0係利用碎材料 65/67/69作為犧牲層，並在製作時包覆振膜68的外圍， 則在電容式感測裝置600主體構造完成後，去除掉犧牲層 65/67/69,即可使得振膜68卡設於電容式感測裝置600 的空腔部615中，如此結構據以實施，振膜將可在空腔部 12 M360536 615中完全形變，以避免内應力的產生，而影響到電容式 感測裝置600感測聲音訊號的準確性。 請參閱第7A圖至第7D圖，係分別為本創作電容式 感測裝置又一實施例之製作步驟示意圖。本實施例之前段 製作步驟與第6A圖至第6D圖所示步驟相同，其在於第 6 D圖之步驟後，钱刻該第三石夕材料層6 7之兩侧邊，以 在該第一絕緣層66上形成一第二缺口部661，沉積一第二 氧化層81以包覆該第三石夕材料層6 7，如第7 A圖所示。 接續，相對於第三矽材料層67之位置以在該第二氧化 層81上形成一第四矽材料層82,沉積一第三氧化層83以 包覆該第四矽材料層82，沉積一第五矽材料層84以包覆 該第二氧化層81及該第三氧化層83，沉積一第二絕緣層 85以包覆該第五矽材料層84並覆蓋該第二缺口部661， 如第7 B圖所示。此外，本實施例之第第四矽材料層82 及第五矽材料層84係可選擇為一單晶矽材料或多晶矽材 料或一非晶矽材料所製成。 接著，於該第二絕緣層85之預設位置蝕刻至該第五 矽材料層84，以形成一第二開口部851，於該基板61之 預設位置蝕刻至該定位層62，以形成一第一開口部611， 如第7 C圖所示。 最後，蝕刻去除該第一開口部611與各蝕刻孔631間 之該定位層62，以形成複數個通孔613，蝕刻去除第二矽 材料層65、第三矽材料層67及第五矽材料層84，接著蝕 刻去除第二氧化層81及第三氧化層83，以形成一空腔部 13 M360536 615，則第四矽材料層82將餘留卡設在空腔部615内，以 成為一懸浮式振膜，如此以完成本貫施例之電容式感測裝 置800的製作流程，如第7 D圖所示。 • 相較於電容式感測裝置600，本實施例電容式感測裝 •置800使用另一製作方法，如此電容式感測裝置800之振 膜82將可採用一矽材料所製作而成，藉此以增加振膜材 料選擇上的多樣化。 再者，由於本創作電容式感測裝置200/400/600/800 籲的製作方法係使用CMOS製程方式，故可於電路規劃時容 易將電容式感測裝置整合於積體電路中，以簡化製程的生 產流程。 以上所述者，僅為本創作之一較佳實施例而已，並非 用來限定本創作實施之範圍，即凡依本創作申請專利範圍 所述之形狀、構造、特徵、方法及精神所為之均等變化與 修飾，均應包括於本創作之申請專利範圍内。 【圖式簡早說明】 第1圖：為習用電容式感測裝置之構造剖面圖。 第2 A圖至第2 G圖：分別為本創作電容式感測裝置一較佳 實施例之製作步驟示意圖。 第3A圖至第3C圖：分別為本創作電容式感測裝置又一實 施例之製作步驟示意圖。 第4 A圖及第4 F圖：分別為本創作電容式感測裝置又一實 施例之製作步驟示意圖。 14 M360536 第5圖：為本創作電容式感测 第6 A圖至第6 G圖：分別為〜實施例之結構示意圖。 施例之製作步驟示意圖】作電谷式感測裝置又一實 第7A圖至第7D圖：分別為本劊、 施例之製作步驟示意圖。電容式感測裝置又一實 11 Π3 15 171 191 2〇〇 211 22 23 241 26 27 281 291 4〇〇 411 42 f夕基板 空腔部 絕緣層 金屬銲墊 保護層 電容式感測裝置 開口部 定位層 第一矽材料層 第二缺口部 弟三石夕材料層 第一絕緣層 通孔 連接部 電容式感測装置 開口部 定位層 【主要元件符號說明】 100 電容式感測裝置 ♦ 111開口部 13 定位層 17 振膜 19 背板 193 通孔 21 基板 213 空腔部 221 第一缺口部 24 導電層 25 弟二石夕材料層 261 第三缺口部 28 第一金屬層 29 第二絕緣層 30 第二金屬層 41 基板 413 空腔部 M360536 421 第一缺口部 43 44 第一氧化層 45 46 第二氧化層 461 • 47 第三矽材料層 48 481 第三缺口部 49 50 第一金屬層 501 51 第二絕緣層 511 52 第二金屬層 600 φ 61 基板 611 613 通孔 615 62 定位層 63 631 蝕刻孔 64 641 第一缺口部 65 66 第一絕緣層 661 67 第三矽材料層 68 69 第四矽材料層 70 • 701 第二開口部 800 81 第二氧化層 82 83 第三氧化層 84 85 第二絕緣層 851 第一;5夕材料層 第二矽材料層 第二缺口部 第四珍材料層 第一絕緣層 通孔 連接部 電容式感測裝置 第一開口部 空腔部 第一矽材料層 第一氧化層 第二矽材料層 第二缺口部 導電層 第二絕緣層 電容式感測裝置 第四矽材料層 第五矽材料層 第二開口部 16M360536 V. New Description: [New Technology Field] This creation is about a capacitive sensing device, especially a capacitive sensing device that can be mass-produced using the 'CMOS process and thereby reduce the production cost. [Prior Art] Please refer to Fig. 1, which is a structural sectional view of a conventional capacitive sensing device. As shown, the capacitive sensing device 100 is applied to the field of microelectromechanical microphones. Its main structure includes a slab substrate 11, a locating layer 13, an insulating layer 15, a diaphragm 17, and a backing plate 19. The positioning layer 13 is disposed on the upper surface of the Shixi substrate 11, and an opening portion 111 is disposed at a predetermined position. An insulating layer 15 is disposed on both sides of the positioning layer 13, and a diaphragm η is disposed above the opening portion ill, and both side ends of the diaphragm I? are fixed in the insulating layer 15. The back plate 19 is disposed on the diaphragm 17 and has a protective layer 191 on the periphery thereof, and has a plurality of through holes 193, and two recessed portions are reserved between the back plate 19 and the insulating layer 15 to form a metal on the concave portion. The pad 171 is electrically connected to the diaphragm 17. Furthermore, the back plate 19 and the diaphragm 17 have a cavity portion 113, and the diaphragm Φ will sense the sound signal to resonate between the cavity portion 113 and the opening portion U1, and the result of the sensing is transmitted through the metal pad 171. The arithmetic processing is performed by transferring to a wafer element (not shown). Although the conventional capacitive sensing device 100 can achieve the effect of sensing sound, the two sides of the 3 M360536 natural film 17 are often tied to the internal structure of the device 100, for example, the insulating layer 15, the back plate 19 and the positioning layer 13 In the above, the diaphragm 17 is prone to generate internal stress, which will affect the ability of the capacitive sensing device 100 to sense. [New content] The main purpose of the present invention is to provide a capacitive sensing device, which mainly mounts a diaphragm in a cavity portion of a capacitive sensing device to become a suspension diaphragm, and the diaphragm will It can be completely deformed to avoid the generation of internal stress and affect the accuracy of sound signal sensing. The second objective of the present invention is to provide a capacitive sensing device in which another metal layer can be added to form a reference capacitance with the original metal layer, and the structural strength of the device can be further enhanced. A further object of the present invention is to provide a capacitive sensing device in which the diaphragm can be made of a metallic material, a material of a luminescent material or a conductive material, thereby increasing the variety of choice of diaphragm material. A further object of the present invention is to provide a capacitive sensing device which mainly utilizes a tantalum material as a sacrificial layer and coats the periphery of the diaphragm during fabrication, and then removes the structure of the capacitive sensing device after completion. The sacrificial layer is removed, so that the diaphragm is stuck in the cavity portion of the capacitive sensing device. Another object of the present invention is to provide a capacitive sensing device that uses a CMOS process to integrate a capacitive sensing device into an integrated circuit. In order to achieve the above object, the present invention provides a capacitive sensing device. The main structure of the 4 M360536 includes: a substrate having a positioning layer on the upper surface thereof and an opening portion at a predetermined position; a first insulating layer , disposed on the positioning layer, forming a cavity-section of the concave pattern on both sides between the first insulating layer and the positioning layer, a diaphragm is disposed in the cavity portion; and a first metal layer is disposed on the first insulation Above the layer, a plurality of through holes are provided, and the diaphragm is disposed at a position between the through hole and the opening port. The present invention further provides a capacitive sensing device, the structure comprising: a substrate having a positioning layer on an upper surface thereof and a first opening portion at a predetermined position; a first layer of germanium material disposed on the substrate a first oxide layer is disposed on the first stone material layer, and a plurality of through holes are disposed between the first oxide layer, the first stone material layer and the positioning layer, and the first oxide layer is coated a first layer of material disposed on the positioning layer; a first insulating layer disposed on the first oxide layer; and a second insulating layer disposed on the first insulating layer and having a first position a second opening portion, a cavity portion of the concave pattern on both sides is formed between the second insulating layer and the first insulating layer, a diaphragm is disposed in the cavity portion, and the diaphragm is disposed between the second opening portion and the through hole Relative position • Upper. [Embodiment] First, please refer to FIG. 2A to FIG. 2G, which are schematic diagrams showing the manufacturing steps of a preferred embodiment of the capacitive sensing device. As shown in the figure, the manufacturing method of the present embodiment mainly provides a substrate 21, a positioning layer 22 is deposited on the upper surface of the substrate 21, and a first germanium material 23 is deposited on the positioning layer 22, and then A 5 M360536 conductive layer 24 is deposited, vapor deposited or sputtered onto the germanium material 23 as shown in FIG. 2A. The substrate 21 can be a single substrate, and the positioning layer 22 can be selected as one of a nitride layer and a layer of a dioxide dioxide. The first material -23 can be selected as a single crystal germanium. The material or the polysilicon material or an amorphous germanium material is formed, and the conductive layer 24 of the embodiment may be a metal material or a conductive material. After the deposition of the conductive layer 24, the first germanium material layer 23 and the conductive layer 24 on both sides of the positioning layer 22 are etched to form a first notch portion 221 on both sides of the positioning layer 22, as shown in FIG. 2B. Shown. Depositing a second layer of tantalum material 25 on the conductive layer 24, and then etching the second layer of tantalum material 25 on both sides of the conductive layer to form a second notch portion 241, as shown in FIG. 2C . Depositing a third layer of tantalum material 26 to cover the first layer of tantalum material 23, the layer of conductive layer 24 and the second layer of tantalum material 25, and covering the second notch portion 241 to form a third notch portion 261, such as 2D The figure shows. The second 矽 I material 25 and the third bismuth material layer 26 may be selected from a single crystal germanium material, a polycrystalline germanium material or an amorphous germanium material. Depositing a first insulating layer 27 on the positioning layer 22 and covering the first notch portion 221 and the third notch portion 261, and the first insulating layer 27 is a layer of dioxide dioxide, as shown in FIG. Show. Depositing, vapor depositing or sputtering a first metal layer 28 on the first insulating layer 27 and the third germanium material layer 26, and etching a plurality of via holes 281 to a third germanium material layer 26 in the first metal layer 28, Moreover, the predetermined position of the substrate 21 is etched to the positioning layer 22 to form an opening portion 211, and the positioning layer 22 above the opening portion 211 is etched away, as shown in FIG. 2F. The first germanium material layer 23, the second germanium material layer 25 and the third germanium material layer 26 are etched away to form a cavity portion 213, and the conductive layer 24 is disposed in the cavity portion 213. In the relative position between the through hole 281 and the opening 211, a suspension diaphragm is formed, so that the manufacturing process of the capacitive sensing device 200 of the present embodiment is completed, as shown in FIG. 2G. Furthermore, the diaphragm 24 will form a sensing capacitance with the first metal layer 28 and be sensed by a sensing circuit depending on the change in capacitance due to vibration or deformation of the diaphragm 24. The capacitive sensing device 200 of the present embodiment uses the germanium material 23/25/26 as a sacrificial layer, and covers the periphery of the diaphragm 24 during fabrication, and is removed after the main body of the capacitive sensing device 200 is constructed. The sacrificial layer 23/25/26 can cause the diaphragm 24 to be locked in the cavity portion 213 of the capacitive sensing device 200. According to the structure, the diaphragm can be completely deformed in the cavity portion 213 to The generation of internal stress is avoided, which affects the quasi-disc nature of the capacitive I sensing device 200 sensing the sound signal. Please refer to FIG. 3A to FIG. 3C, which are schematic diagrams showing the manufacturing steps of another embodiment of the capacitive sensing device. The pre-stage fabrication steps of this embodiment are the same as those shown in Figures 2A to 2E, and are mainly deposited, steamed or deposited sequentially on the first metal layer 28 after the step of Figure 2E. A second insulating layer 209 and a second metal layer 30 are forged, and a plurality of connecting portions 291 are chiseled in the second insulating layer 29 to electrically connect the second metal layer 30 to the first metal layer 28 As shown in Figure 3A. 7 M360536, then etching is performed at a predetermined position of the second metal layer 30 to form a plurality of vias 281 connected to the third germanium material layer 26, and further, the predetermined position of the substrate 21 is etched to the positioning layer 22, to form an opening portion -211, while etching to remove the positioning layer 22 above the opening portion 211, as shown in Fig. 3B. The liquid engraving liquid is poured from the through hole 2 81 or the opening portion 211, and the first tantalum material layer 23, the second tantalum material layer 25 and the third tantalum material layer 26 are removed by a surname to form a cavity portion 213. Therefore, the conductive layer 24 is inserted into the cavity portion 213 to form a floating diaphragm, and the manufacturing process of the capacitive sensing device 200 of the embodiment is completed. The diaphragm 24 and the first metal layer 28 are combined to form a sensing capacitance, and are sensed by a sensing circuit according to a change in capacitance caused by vibration or deformation of the diaphragm 24, and the first metal layer 28 will The second metal layer 30 is formed as a reference capacitor for the sensing circuit reference application. In the capacitive sensing device 200 of this embodiment, the sensing circuit compares the capacitance between the capacitance and the reference capacitance to sense the actual capacitance change of the sensing capacitor, so as to obtain more accurate. Sensing results. Of course, the second insulating layer 29 and the second metal layer 30 may also be designed as a shielding layer or simply become a back plate structure of the reinforced capacitive sensing device 200. Please refer to FIG. 4A and FIG. 4F , which are schematic diagrams showing the manufacturing steps of another embodiment of the capacitive sensing device. As shown in the figure, the manufacturing method of the first embodiment provides a substrate 41, a positioning layer 42 is deposited on the upper surface of the substrate 41, and a first germanium material 8 M360536 4 3 is deposited on the positioning layer 42. The first layer of stone material 4 3 on both sides of the layer 4 2 is formed with a first notch portion 421 on both sides of the positioning layer 42 as shown in FIG. 4A. The substrate 41 can be a stone substrate, and the positioning layer 42 can be selected as one of a tantalum nitride layer and a germanium dioxide layer. The first material 43 can be selected as an early crystal cutting material or Made of polycrystalline hard material or an amorphous germanium material. Depositing a first oxide layer 44 to coat the first layer of germanium material 43 relative to the position of the first layer of germanium material 43 to form a second layer of germanium material 45 on the first oxide layer 44, depositing a layer The second oxide layer 46 covers the second germanium material layer 45, deposits a third germanium material layer 47 on the second oxide layer 46, and etches away the third germanium material on both sides of the second oxide layer 46. The layer 47 is formed with a second notch portion 461 on both sides of the second oxide layer 46, as shown in Fig. 4B. Depositing a fourth germanium material layer 48 to coat the third germanium material layer 47, the first oxide layer 44 and the second oxide layer 46, and covering the second notch portion 461 to form a third notch portion 481, such as 4 C picture shown. In addition, the second tantalum material layer 45, the third tantalum material layer 47, and the fourth tantalum material layer 48 of the present embodiment may be selected from a single crystal germanium material or a polycrystalline germanium material or an amorphous germanium material. Depositing a first insulating layer 49 on the positioning layer 42 and covering the first notch portion 421 and the third notch portion 481, and then depositing, vapor-depositing or sputtering a first metal layer 50 on the first insulating layer 49 and fourth A plurality of via holes 501 are further etched into the first metal layer 50 to the fourth germanium material layer 48, and a predetermined position of the substrate 41 is etched to the positioning layer 42 to form a layer of 9 M360536. The opening portion 411 simultaneously etches away the positioning layer 42 above the opening portion 411 as shown in FIG. 4D. The first tantalum material layer 43, the third tantalum material layer 47, and the fourth • stone material layer 4 are removed by etching as shown in FIG. The first oxide layer 44 and the second oxide layer 46 are etched away to form a cavity portion 413, and the second vaporization layer 45 is disposed in the cavity portion 413 to become a floating diaphragm and complete The manufacturing process of the capacitive sensing device 400 of the present embodiment is as shown in FIG. < Compared with the capacitive sensing device 200, the capacitive sensing device 400 of the present embodiment uses another manufacturing method, such that the diaphragm 45 of the capacitive sensing device 400 can be fabricated by using a material. This is to increase the variety of diaphragm material selection. Referring to Fig. 5, the structure of an embodiment of the capacitive sensing device is not intended. Similarly, the capacitive sensing device 400 can also sequentially add a second insulating layer 51 and a second metal layer 52 to the first metal layer 50 > and a plurality of the second insulating layer 51 are chiseled. The connecting portion 511 is configured such that the second metal layer 52 is electrically connected to the first metal layer 50 , and the through holes 501 in the first metal layer 50 extend through the second insulating layer 51 and the second metal layer 52 . Thus, the capacitive sensing device 400 can obtain the sensing capacitance composed of the diaphragm 45 and the first metal layer 50, and the reference capacitance composed of the first metal layer 50 and the second metal layer 52. The sensing circuit compares the capacitance between the sensing capacitor and the reference capacitor to know the actual capacitance variation of the sensing capacitor, resulting in a more accurate sensing result. 10 M360536 Please refer to FIG. 6A to FIG. 6G, which are schematic diagrams showing the manufacturing steps of another embodiment of the capacitive sensing device. As shown in the figure, the manufacturing method of the first embodiment provides a substrate 61, and a positioning layer 6 2 is formed on the surface of the substrate 61 and a first layer of stone material 6 3 is deposited on the surface, as shown in FIG. 6A. Shown. The substrate 61 can be a germanium substrate, and the positioning layer 62 can be selected as one of a tantalum nitride layer and a germanium dioxide layer. The first germanium material 63 can be selected as a single crystal germanium material or poly germanium. A material or an amorphous material is made. After the deposition of the first germanium material layer 63 is completed, a plurality of etching holes 631 are formed on the predetermined position of the first germanium material layer 63, and the etching holes 631 extend to the partial positioning layer 62, and then A first oxide layer 64 is formed on the side of the etching hole 631 and the first layer of the stone material 63, as shown in FIG. Depositing a second layer of tantalum material 65 on the first layer of tantalum material 63, and covering each of the etching holes 631, and etching the second layer of tantalum material 65 on both sides of the first oxide layer 64 to A first notch portion 641 is formed on the first oxide layer 64 as shown in Fig. 6C. Depositing a first insulating layer 66 on the first oxide layer 64 and covering the first notch portion 641, depositing a third layer of germanium material 67 on the first insulating layer 66 and the second layer of stone material 65, such as Figure 6 D shows. Depositing, vapor depositing or sputtering a conductive layer 68 on the third germanium material layer 67, and etching both sides of the conductive layer 68 and the third germanium material layer 67 to form a second gap on the first insulating layer 66. Portion 661, and a fourth layer of material 11 M360536 layer 69 is deposited to coat the conductive layer 68 and the third layer of tantalum material 67, as shown in FIG. Depositing a second insulating layer 70 to cover the fourth germanium material layer 69 and covering the second notch portion 661, and then etching the predetermined position of the second insulating layer 70 to the fourth germanium material layer 69, to form a second opening portion 701, while etching to the positioning layer 62 at a predetermined position of the substrate 61 to form a first opening portion 611, as shown in FIG. Furthermore, the first insulating layer 66 and the second insulating layer 70 may be a germanium dioxide layer, and the conductive layer 68 is made of a metal material or a conductive material, and the second germanium material layer is formed. 65. The third tantalum material layer 67 and the fourth tantalum material layer 69 may be selected from a single crystal germanium material or a polycrystalline germanium material or an amorphous germanium material. Subsequently, the positioning layer 62 between the first opening portion 611 and each of the etching holes 631 is removed by etching to form a plurality of through holes 613, and the second germanium material layer 65, the third germanium material layer 67, and the fourth germanium are etched away. The material layer 69 is formed into a cavity portion 615, and the conductive layer 68 is disposed in the cavity portion 615 and disposed at a relative position between the through hole 613 and the second opening portion 701 to form a floating vibration. The film is thus completed in the process of fabricating the capacitive sensing device 600 of the present embodiment, as shown in FIG. The capacitive sensing device of the present embodiment uses a crushed material 65/67/69 as a sacrificial layer, and covers the periphery of the diaphragm 68 at the time of fabrication, after the main body of the capacitive sensing device 600 is constructed. The sacrificial layer 65/67/69 is removed, so that the diaphragm 68 is locked in the cavity portion 615 of the capacitive sensing device 600. Thus, the structure is implemented, and the diaphragm will be in the cavity portion 12 M360536 615 The medium is completely deformed to avoid the generation of internal stress, which affects the accuracy of the capacitive sensing device 600 for sensing the sound signal. Please refer to FIG. 7A to FIG. 7D , which are schematic diagrams showing the manufacturing steps of another embodiment of the capacitive sensing device. The steps in the previous stage of the present embodiment are the same as the steps shown in FIGS. 6A to 6D. After the step of FIG. 6D, the money is engraved on both sides of the third layer of the stone material layer 67. A second notch portion 661 is formed on an insulating layer 66, and a second oxide layer 81 is deposited to cover the third layer of the stone material, as shown in FIG. 7A. Continuing with respect to the position of the third germanium material layer 67 to form a fourth germanium material layer 82 on the second oxide layer 81, depositing a third oxide layer 83 to coat the fourth germanium material layer 82, depositing a a fifth layer of material 84 is formed to cover the second oxide layer 81 and the third oxide layer 83, and a second insulating layer 85 is deposited to cover the fifth layer of tantalum material 84 and cover the second notch portion 661, such as Figure 7B shows. In addition, the fourth germanium material layer 82 and the fifth germanium material layer 84 of the embodiment may be selected from a single crystal germanium material or a polycrystalline germanium material or an amorphous germanium material. Then, the fifth insulating material layer 84 is etched to a predetermined position of the second insulating layer 85 to form a second opening portion 851, and is etched to the positioning layer 62 at a predetermined position of the substrate 61 to form a The first opening portion 611 is as shown in Fig. 7C. Finally, the positioning layer 62 between the first opening portion 611 and each of the etching holes 631 is etched away to form a plurality of through holes 613, and the second germanium material layer 65, the third germanium material layer 67 and the fifth germanium material are etched away. The layer 84 is then etched away to remove the second oxide layer 81 and the third oxide layer 83 to form a cavity portion 13 M360536 615, and the fourth germanium material layer 82 is retained in the cavity portion 615 to become a suspension. The diaphragm is so as to complete the manufacturing process of the capacitive sensing device 800 of the present embodiment, as shown in FIG. 7D. Compared with the capacitive sensing device 600, the capacitive sensing device 800 of the present embodiment uses another manufacturing method, such that the diaphragm 82 of the capacitive sensing device 800 can be fabricated by using a material. Thereby to increase the diversity of diaphragm material selection. Furthermore, since the manufacturing method of the capacitive sensing device 200/400/600/800 is based on the CMOS process, it is easy to integrate the capacitive sensing device into the integrated circuit during circuit planning to simplify The production process of the process. The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention, that is, the shape, structure, features, methods and spirits described in the scope of the patent application are equal. Changes and modifications are to be included in the scope of the patent application for this creation. [Description of the drawings] Fig. 1 is a structural sectional view of a conventional capacitive sensing device. 2A to 2G are schematic diagrams showing the manufacturing steps of a preferred embodiment of the capacitive sensing device. 3A to 3C are schematic views respectively showing the manufacturing steps of still another embodiment of the capacitive sensing device. Fig. 4A and Fig. 4F are respectively schematic diagrams showing the manufacturing steps of another embodiment of the capacitive sensing device. 14 M360536 Fig. 5: Capacitive sensing for this creation. Fig. 6A to Fig. 6G are respectively schematic diagrams of the structure of the embodiment. Schematic diagram of the production steps of the embodiment] Another example of the electric valley type sensing device is shown in Figs. 7A to 7D: respectively. Capacitive sensing device is another 11 Π3 15 171 191 2〇〇211 22 23 241 26 27 281 291 4〇〇411 42 f 基板 substrate cavity insulation metal pad protection layer capacitive sensing device opening positioning Layer first 矽 material layer second notch part 弟三石夕 material layer first insulation layer through hole connection portion capacitive sensing device opening positioning layer [main component symbol description] 100 capacitive sensing device ♦ 111 opening portion 13 positioning Layer 17 diaphragm 19 back plate 193 through hole 21 substrate 213 cavity portion 221 first notch portion 24 conductive layer 25 second layer of material layer 261 third notch portion 28 first metal layer 29 second insulating layer 30 second metal Layer 41 Substrate 413 Cavity M360536 421 First notch 43 44 First oxide layer 45 46 Second oxide layer 461 • 47 Third germanium material layer 48 481 Third notch 49 50 First metal layer 501 51 Second insulation Layer 511 52 second metal layer 600 φ 61 substrate 611 613 through hole 615 62 positioning layer 63 631 etching hole 64 641 first notch portion 65 66 first insulating layer 661 67 third germanium material layer 68 69 fourth germanium material layer 70 • 701 Opening portion 800 81 second oxide layer 82 83 third oxide layer 84 85 second insulating layer 851 first; 5th material layer second germanium material layer second notch portion fourth precious material layer first insulating layer through hole connecting portion Capacitive sensing device first opening cavity portion first tantalum material layer first oxide layer second tantalum material layer second notch portion conductive layer second insulating layer capacitive sensing device fourth tantalum material layer fifth tantalum material Layer second opening portion 16