M360368 五、新型說明： - 【新型所屬之技術領域】 本創作係關於一種半導體晶粒檢測治具，特別是一種雙面電極半.導體 晶粒之檢測治具。 【先前技術】 發光二極體(LED)逐漸廣泛應用於顯示器之背光源、招牌、手持照明裝 置及汽機車之儀表指示、或信號燈，且單顆元件的發光亮度逐漸提升，個 ，別元件被單獨使用的機會大增。以往常見的製造方法，是如圖i所示，將 LED晶粒80的兩個電極81都成型於單一侧面，在製造及測試流程中，則 疋先將整片佈局完成的晶圓以例如雷射進行部分切割，在各晶粒間仍保持 聯繫狀況下置放到一片供承載的塑膠膜上，使得晶圓與塑膠膜間緊密附著。 隨後因塑膠膜具有良好的延展性，當將塑膠膜12拉伸、繃緊於如圖2 所不之框架13時’原本附著於塑膠膜上的整片晶圓8，將由各被切割的部 分斷開，使得所有晶粒80彼此分離而暫時附著於塑膠膜12上，成為常見 φ 的單顆受測狀態。測試時，如圖3所示，則是以兩組針壓組件14，分別致 能此LED晶粒位於同一側面兩電極，使得受測的單顆LED晶粒發光，並感 測其發光強度與光場分佈等資訊，從而判別該LED晶粒的好壞。 為因應不同需求，半導體晶粒也有各自不同的設計；例如目前常見的 间免度LED晶粒’為有效增大發光表面的面積，發光側面僅有單一致能電 極’而將接地電極設置在發光面的相反側面，且在晶圓狀態時尚未被分 ，離的各晶粒之接地電極彼此導it。因此在測試時，是如圖4所示，將整片 晶圓置放於單-的導電基座15上，由導電基座15導接所有接_極作為 3 M360368 共同接地，並關如單-的針件14逐—致能各晶粒9q，並在檢測完畢 '後才_分離各脉90。為便於，以下射此類接地電極與致能電極 - 分在兩相反側面的晶粒90為雙面電極半導體晶粒。 不幸的是’由於單一晶粒的發光強度逐漸增強，發光強度是否精準也 成為備受關注的議題，在切割過程中，即使些微的偏差，都會使該切割偏 差兩側的晶粒S發光面積麵_獻或縮小，導致發光強度過大或過小 而減損其價值。如何綠認每-顆晶粒的發光強度，並正確分類，使出廢產 φ 品規格齊一，便成為提升產品競爭力與價格的不二法門。 聽種雙面電極晶粒在置放於塑顧，錄伸娜膜而使晶粒彼此分 離後’由於接地電極與致能電極之—必辭貼於不導電的塑膠膜上，若以 導針戳破藍膜接觸底部1；極（由塑膠膜承載），導通時所產生之高溫會導致 藍膜在約60度時即開始熔融，因此一方面不能像整片晶圓時，以導電基座 導接至共同接地電極，以單一針壓組件導接致能致能電極而使其發光受 測；也不能以兩組位於同一側面的釗壓組件致能發光u也就是說，依照目 籲前技術，此種具有雙面電極的半導體晶粒在分離後並無適當的自動化檢測 方法。 承上所述，若能利用與現有檢測方式及檢測機台大致相容的雙面電極 半導體晶粒檢測治具，供檢測各分離後的上述晶粒，將使得晶粒的電氣性 能被精確測出，產品品質從而提升。 【新型内容】 ^ 本創作之一目的，在提供一種可檢測切割分離後，不再相互電性連結 的雙面電極半導體晶粒檢測治具。 4 M360368 本創作有一目的，在提供一種具有良好導電性及導熱性的雙面電極半 導體晶粒檢測治具。 本創作再一目的，在提供一種可穩固固定受測晶粒之雙面電極半導體 晶粒檢測治具。 本創作係一種具有雙面電極半導體晶粒檢測治具，包含：一層金屬導 電膜；一個固定並繃緊該金屬導電膜之框架；及一層形成於該金屬導電膜 上、供該等具有雙面電極半導體晶粒的雙面電極之一被導電接觸並附著其 上的導電黏著層》 》 切割偏差而發光面積非預期變化的具有雙面電極晶粒，利用本創作承 載以單一針壓組件導接致能而接受測試，令晶粒的電氣性能被精確測出， 在出貨給顧客前，挑掉非合格晶粒或進行發光亮度分類，使顧客獲得不良 率趨近於0 ppm及最符合顧客要求的晶粒，從而解決習知檢測方法及機台 的上述問題。 【實施方式】 有關本創作之前述及其他技術内容、特點與功效，在以下配合參考圖 式之較佳實施例的詳細說明中，將可清楚的呈現。為方便說明，本創作之 ’檢測機台係例示為發光測試機台，具有雙面電極半導鱧晶粒檢測治具亦例 示為一承載裝置，且半導體晶粒係一種發光二極體晶粒；當然，若利用本 創作針對具有雙面電極之半導體元件進行它項檢測亦屬本案之範疇無疑。 如圖5、6、7所示之本創作第一實施例’依圖8所示檢測步驟，先以 步驟a)提供一承載裝置21電氣接觸測試機台之導電基座25，且本例中，該 承载裝置21更包含有一層例示為銅箔的金屬導電膜211、一層表面阻抗小 -於〇.06歐姆之導電黏著層212及用以固定該承載裝置21的框架213，並被 導電基座25所支撐；隨後進行步驟b)令具有特定延展性基板92的複數雙 M360368 面電極半導體晶粒90雙面電極91之一被導電接觸於承載裝置21 ;再者本 例中該金廣導電膜211具有一個優於該半導體晶粒基板92之延展性β 而該步驟的更依序包含下列三個步驟：bl)將一片尚未被切割，並具有 . 複數上文所述晶粒90的晶圓9，置放於一片於此例示為藍膜的可延展基片 7上’且該片藍膜之厚度及延展性分別約為1〇〇/m及200% ; b2)拉伸該可 延展基片7’使得該晶圓9中的晶粒90彼此分離；及b3)搬移該等彼此分離 的晶粒90，令其單一面電極91朝上，另一面電極91則導電接觸並附著於 該承載裝置21之導電黏著層212。 齡 承上並參照圖9進行步驟c)，該檢測機台2以一組針麼組件24導電接 觸該等半導體晶粒90之一的朝上面電極91以進行晶粒發光檢測，並由光 感測器261接收其發光資料。再進行步驟d)由處理裝置26處理發光檢測資 料並紀錄該檢測結果。 再者，參照圖10，上述晶粒檢測步驟亦可如圖U所示方式施行，此即 為本創作之第二實施例，不同於前例之處則為其步称b)係依序包含另外三 個不同步驟：b4)置放一片尚未分離、並包括複數雙面電極晶粒的晶圓於承 載裝置之導電黏著層，並以其雙面電極之一導電接觸該承載裝置；b5)拉伸 • 該延展性優於半導體晶粒基板的金屬導電膜，使該等晶粒彼此分離；及祕) 將該金屬導電膜固定至一組框架上，使該等晶粒保持彼此分離。 承上，更因為前例所述之藍膜，係一種難以重複使用的耗材，欲將每 片晶圓分離出晶粒時，皆需使用一片藍膜；而相較於前文之檢測方式，本 例不僅將節省下藍膜的不斐成本，更無須耗用時間將已被分離的複數晶粒 轉置於承載裝置，進一步減少了部份工序及其所用工時，而提升了晶粒檢 測之效率；當該等複數晶粒皆已檢測完畢時，其發光資料亦傳送至處理裝 -置，則進行步驟e)由汲取裝置27,逐一將晶粒搬離承載裝置，得以進行隨 後的分類動作；而該汲取裝置27，之汲取分離動作係先後以el)隱藏於導電 M360368 基座底面的頂撐件27Γ頂撐承载裝置之金屬導電膜及導電黏著層，減少晶 ' 粒附著導電黏著層之面積’再以e2)—組汲取件272,以一個大於該年電黏著 層黏著力之汲取力，將該待分類晶粒汲取脫離該導電黏著層。再者，本例 所示之導電黏著層係一層導電膠，該層導電膠的黏著力約為9 8nt/in，且其 黏著性可被調整，而能輕鬆適用於不同種類的待測晶粒及汲取裝置。 如此’藉由本創作所揭露之具有雙面電極半導體晶粒檢測治具，令檢 測機台以一個自動化檢測流程，令由晶圓分離之雙面電極晶粒的電氣性能 被精確測出，使顧客能獲得不良率〇 ppm的晶粒，不僅提昇檢測結果之精 • 度及效率，並正確分類完測晶粒，使顧客出廠產品規格、品質得以一致， 增加了產品受檢測後的市場價值。 惟以上所述者，僅為本創作之較佳實施例而已，當不能以此限定本創 作實施之範圍，即大凡依本創作申請專利範圍及創作說明内容所作簡單的 等效變化與修飾，皆仍屬本創作專利涵蓋之範圍内。 【圖式簡單說明】 圖1為同一側面兩電極的led晶粒之俯視示意圖； 圖2為位於塑膠膜上各自分離的LED晶粒之俯視示意圖； 圖3為習知同一側面兩電極LED晶粒，利用塑勝膜承載而接受測試的 立體示意囷； 圖4為習知另-晶粒，以導電基座承載而接受測試的立體示意圖； 圖5為本創作第一實施例之具有雙面電極半導趙晶粒檢測機台，其電 氣接觸承做置的導電基座域示; 圓6為本創作第一實施例之承載晶圓的藍膜俯視示意圖； 圖7為本創作第-實施例之承載裝置之金屬導電膜、導電黏著層及框 7 M360368 .架的不意圖， 圖8為本創作第一實施例之具有雙面電極半導體晶粒檢測方式的步驟 不意圖， 圖9為本創作第一實施例之具有雙面電極半導體晶粒檢測機台的立體 示意圖； 圖10為本創作第二實施例之汲取裝置示意圖； 圖11為本創作第二實施例之另一晶粒檢測方式的步驟示意圖。 M360368 【主要元件符號說明】 12...塑膠膜 27’...汲取裝置 13、213...框架 27Γ...頂撐件 14、24…針壓組件 272’…汲取件 15、25...導電基座 7...可延展基片 2...檢測機台 8、9…晶圓 21...承載裝置 80、90…晶粒 211...金屬導電膜 81、91…電極 212...導電黏著層 26...處理裝置 92...基板 261...光感測器 a——e、bl)—b6)、el)、e2)、b’…步驟M360368 V. New description: - [New technical field] This creation is about a semiconductor die inspection tool, especially a double-sided electrode half-conductor die inspection tool. [Prior Art] Light-emitting diodes (LEDs) are increasingly used in backlights, signage, hand-held lighting devices, and instrument indicators, or signal lights of display vehicles, and the brightness of individual components is gradually increased. The opportunities for use alone have increased dramatically. In the conventional manufacturing method, as shown in FIG. i, the two electrodes 81 of the LED die 80 are formed on a single side. In the manufacturing and testing process, the wafers of the entire layout are firstly thundered. The shot is partially cut and placed in a piece of plastic film for carrying under the condition that the dies are kept in contact with each other, so that the wafer and the plastic film are closely adhered. Then, because the plastic film has good ductility, when the plastic film 12 is stretched and stretched to the frame 13 as shown in FIG. 2, the entire wafer 8 originally attached to the plastic film will be cut by each part. The disconnection is such that all of the crystal grains 80 are separated from each other and temporarily attached to the plastic film 12, becoming a single measured state of the common φ. During the test, as shown in FIG. 3, two sets of acupressure assemblies 14 are respectively enabled to respectively align the LED dies on the same side of the two electrodes, so that the single LED dies are illuminated, and the illuminance is sensed. Information such as the distribution of the light field to determine the quality of the LED die. In order to meet different needs, semiconductor dies have different designs; for example, the current common eliminator LED dies 'is effectively increasing the area of the illuminating surface, the illuminating side has only a single uniform electrode' and the grounding electrode is set to illuminate. The opposite side of the face, and the state of the wafer is not divided, and the ground electrodes of the respective die are guided to each other. Therefore, in the test, as shown in FIG. 4, the whole wafer is placed on the single-conducting pedestal 15, and all the _ poles are connected by the conductive pedestal 15 as 3 M360368, and are closed as a single. - The needle member 14 enables each of the crystal grains 9q, and separates the respective veins 90 after the detection is completed. For convenience, the following grounding electrode and the enabling electrode - the crystal grains 90 on the opposite sides are double-sided electrode semiconductor crystal grains. Unfortunately, due to the gradual enhancement of the luminescence intensity of a single crystal grain, the accuracy of the luminescence intensity has become a topic of concern. In the cutting process, even slight deviations will cause the grain S illuminating area on both sides of the cutting deviation. _ contribution or reduction, resulting in excessive or too small illuminating intensity to detract from its value. How to recognize the luminous intensity of each grain and correctly classify it so that the specifications of the waste product φ are the same, it becomes the only way to improve the competitiveness and price of the product. Listening to the double-sided electrode crystal grains placed in the plastic film, recording the film and separating the crystal grains after the 'because the ground electrode and the enabling electrode - must be attached to the non-conductive plastic film, if the needle Puncture the blue film to contact the bottom 1; the pole (beared by the plastic film), the high temperature generated during the conduction will cause the blue film to start melting at about 60 degrees, so on the one hand can not be like a whole wafer, with a conductive base Conducting to a common grounding electrode, guiding the enabling electrode with a single needle pressing component to cause the illuminating to be measured; nor enabling the two sets of rolling components on the same side to enable luminescence u Techniques, such semiconductor dies with double-sided electrodes do not have an appropriate automated detection method after separation. As described above, if the double-sided electrode semiconductor die inspection tool which is substantially compatible with the existing detection method and the inspection machine can be used for detecting the separated crystal grains, the electrical properties of the crystal grains are accurately measured. Out, the quality of the product is improved. [New content] ^ One of the purposes of this creation is to provide a double-sided electrode semiconductor die inspection jig that can be electrically connected without being electrically connected after detecting the separation. 4 M360368 This creation has a purpose to provide a double-sided electrode semiconductor die inspection tool with good electrical conductivity and thermal conductivity. A further object of the present invention is to provide a double-sided electrode semiconductor die inspection fixture capable of stably fixing a die to be tested. The present invention relates to a double-sided electrode semiconductor die inspection tool comprising: a metal conductive film; a frame for fixing and tensioning the metal conductive film; and a layer formed on the metal conductive film for the two sides One of the double-sided electrodes of the electrode semiconductor die is electrically contacted and adhered to the conductive adhesive layer thereon. The double-sided electrode die has a non-expected change in the light-emitting area, and is guided by a single needle-pressing component by the present invention. Tested to enable the electrical performance of the die to be accurately measured. Before shipment to the customer, pick out the non-qualified die or classify the brightness of the light, so that the customer's non-performing rate is close to 0 ppm and most suitable for customers. The required crystal grains are solved to solve the above problems of the conventional detection method and the machine. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. For convenience of explanation, the 'detection machine' of the present invention is exemplified as an illuminating test machine, and the double-sided electrode semi-conductive dies are also exemplified as a carrier device, and the semiconductor die is a light-emitting diode die. Of course, the use of this creation for the detection of semiconductor components with double-sided electrodes is also within the scope of this case. As shown in FIG. 5, FIG. 6, the first embodiment of the present invention, the detection step shown in FIG. 8 is first provided with a conductive device 25 electrically contacting the test machine with the carrying device 21 in step a), and in this example The carrier device 21 further includes a metal conductive film 211 exemplified as a copper foil, a conductive adhesive layer 212 having a surface resistance of less than 〇.06 ohm, and a frame 213 for fixing the carrier device 21, and is electrically conductive. The holder 25 is supported; then step b) is performed to make one of the double-sided M360368 surface electrode semiconductor die 90 having the specific ductility substrate 92 electrically contacted to the carrier device 21; in this case, the gold-conducting conductive The film 211 has a ductility β superior to that of the semiconductor die substrate 92. The step of the step further comprises the following three steps: bl) a piece of crystal which has not been cut and has a plurality of crystal grains 90 as described above. Circle 9, placed on a piece of extensible substrate 7 exemplified as a blue film 'and the thickness and ductility of the blue film are about 1 〇〇 / m and 200% respectively; b2) stretching the stretchable The substrate 7' separates the crystal grains 90 in the wafer 9 from each other; and b3) moves the other Isolated grains 90, single-side electrode 91 make up the other side of the conductive contact with electrode 91 and attached to the carrier device 21 of the conductive adhesive layer 212. Step c) is performed by referring to FIG. 9. The detecting machine 2 electrically contacts the upper surface electrode 91 of one of the semiconductor crystal grains 90 with a set of pins 24 for grain luminescence detection, and is sensed by light. The detector 261 receives its luminescent data. Further, in step d), the luminescence detection material is processed by the processing device 26 and the detection result is recorded. Furthermore, referring to FIG. 10, the above-described die detecting step can also be performed as shown in FIG. U, which is the second embodiment of the present creation. The difference from the previous example is that the step is b) sequentially includes another Three different steps: b4) placing a wafer that has not been separated and including a plurality of double-sided electrode dies on the conductive adhesive layer of the carrier, and electrically contacting the carrier with one of its double-sided electrodes; b5) stretching • The ductility is superior to the metal conductive film of the semiconductor die substrate to separate the crystal grains from each other; and the metal conductive film is fixed to a set of frames to keep the crystal grains separated from each other. In addition, because the blue film described in the previous example is a consumable material that is difficult to reuse, a blue film is required to separate each wafer from the wafer; compared with the previous detection method, this example Not only will the cost of the blue film be saved, but also the time required to transfer the separated multiple grains to the carrying device, further reducing the number of processes and the man-hours used, and improving the efficiency of grain inspection. When the plurality of crystal grains have been detected, the illuminating data is also transmitted to the processing device, and then step e) is carried out by the capturing device 27, and the dies are moved one by one away from the carrier device to perform the subsequent sorting operation; The picking device 27, the picking and separating operation system is el) hidden in the metal support film and the conductive adhesive layer of the top support member 27 of the bottom surface of the conductive M360368 base, thereby reducing the area of the conductive adhesive layer attached to the crystal grain. 'And e2' - the group picking member 272 extracts the to-be-classified crystal grains away from the conductive adhesive layer with a drawing force greater than the adhesion of the electric adhesive layer. Furthermore, the conductive adhesive layer shown in this example is a layer of conductive adhesive. The adhesive of the conductive adhesive has a bonding strength of about 98 nt/in, and the adhesiveness can be adjusted, and can be easily applied to different types of crystal grains to be tested. And picking up the device. Thus, the double-sided electrode semiconductor die inspection jig disclosed by the present invention enables the inspection machine to accurately measure the electrical performance of the double-sided electrode die separated by the wafer by an automated inspection process, so that the customer The ability to obtain crystal grains with a defect rate of 〇ppm not only improves the precision and efficiency of the test results, but also correctly classifies the finished crystal grains, so that the specifications and quality of the products manufactured by the customers are consistent, which increases the market value of the products after testing. However, the above is only the preferred embodiment of the present invention. When it is not possible to limit the scope of the creation of the creation, that is, the simple equivalent change and modification of the patent application scope and the creative description content of the creation application are all It is still covered by this creation patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a top plan view of a led die of two electrodes on the same side; FIG. 2 is a top plan view of LED chips respectively separated on a plastic film; FIG. 3 is a conventional two-electrode LED die on the same side. Figure 3 is a perspective view of a conventional die-bearing, which is carried by a conductive pedestal and tested; Figure 5 is a double-sided electrode of the first embodiment of the present invention. The semi-conductive Zhao die inspection machine is electrically connected to the conductive base of the substrate; the circle 6 is a top view of the blue film of the carrier wafer of the first embodiment; FIG. 7 is a first embodiment of the present invention. The metal conductive film of the carrier device, the conductive adhesive layer and the frame are not intended. FIG. 8 is a schematic diagram of the step of detecting the double-sided electrode semiconductor die in the first embodiment of the present invention. FIG. FIG. 10 is a schematic view of a pick-up device of a second embodiment of the present invention; FIG. 11 is a schematic view of another die detecting method according to a second embodiment of the present invention; step schematic diagram. M360368 [Major component symbol description] 12...Plastic film 27'...Capture device 13, 213...Frame 27Γ... Top support 14, 24... Acupressure assembly 272'... Pickup member 15, 25. .. conductive base 7 ... extendable substrate 2 ... detecting machine 8 , 9 ... wafer 21 ... carrying device 80, 90 ... die 211 ... metal conductive film 81, 91 ... electrode 212...conductive adhesive layer 26...processing device 92...substrate 261...photosensor a——e, bl)-b6), el), e2), b'...step