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TWM340561U - High-power light-emitting diode - Google Patents

High-power light-emitting diode Download PDF

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Publication number
TWM340561U
TWM340561U TW97206086U TW97206086U TWM340561U TW M340561 U TWM340561 U TW M340561U TW 97206086 U TW97206086 U TW 97206086U TW 97206086 U TW97206086 U TW 97206086U TW M340561 U TWM340561 U TW M340561U
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TW
Taiwan
Prior art keywords
emitting diode
power light
metal base
item
base
Prior art date
Application number
TW97206086U
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Chinese (zh)
Inventor
Feng-Yuan Huang
Sheng-De Chen
Original Assignee
Feng-Yuan Huang
Sheng-De Chen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Feng-Yuan Huang, Sheng-De Chen filed Critical Feng-Yuan Huang
Priority to TW97206086U priority Critical patent/TWM340561U/en
Publication of TWM340561U publication Critical patent/TWM340561U/en

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Description

M340561 八、新型說明: 【新型所屬之技術領域】 尤指一種高功率發 本創作係有關於一種發光二極體 光二極體。 【先前技術】 八由於發光二極體⑽)具有良好的亮度、較長的壽 =Π料諸多優點,已被廠商大量^泛地應用在室 $纟的加明4置上;然而,影響LED使用壽命長短的 最顯著因素’為提供料⑽可在—較適溫㈣作環境下 =,因此’本創作人即以提供照明I置的散熱 本案的研究課題。 卞马 習知之高功率發光二極體,其主要包括絕緣座、第 一、二電極、發光晶粒、導線及封膠,其中第—電極及第 :電極係分別插接於絕緣座’發光晶粒則佈設於絕緣座之 -平面上’導線係分別連接於發光晶粒及各電極,再 膠覆蓋於絕緣座之平面,並包覆發光晶粒及導線;如此, 以組合成一高功率發光二極體。 然而’習知之高功率發光二極體,在實際使用上仍存 有下述問題點’由於此高功率發光二極體在使用中合產 生大量的熱量’其熱量並不易被快速的導散至外部,^ 發光晶粒的使用壽命大幅縮短;著實有待加以改善者。 【新型内容】 5 M340561 士創作之-㈣’在於提供一種高功率發光 社" …, •工,"丁,又7〇 -才系體, :了達成上述之目的’本創作係提供—種高功率發光 ::稭由金屬底座的設置,可將發光晶粒所產生的埶量導 散出、’而大幅度的提昇發光晶粒的❹壽| …里^ 包括一第一電極、複數第二電極 二極 金屬底座 =絕緣套、複數發光晶粒、複數導線及—封膠,其中該 2雷f座開:有稷數貫穿孔;該等絕緣套分別套接於該第 二及該等第二電極外部’且穿接在該金屬底座的該等 寺毛光日日粒係設置在該金屬底座的上表面; :亥寺導線分職連接料發光晶粒及料電極 :於該金屬底座之上表面,並包覆該等發光晶粒及該等導 線。 本創作之另-目的,在於提供一種高功率發光二極 體,其係糟由散熱體與金屬底座的相互導接,可將各發光 晶粒所產生的熱量導散出來’進而延長各發光晶粒的使用 壽命。 本創作之又-目的,在於提供一種高功率發光二極 體,其係藉由各發光晶粒不同顏色配置,從而可照射出各 種不同光線以增加美觀性。 【實施方式】 配合圖式說明如 並非用來對本創 有關本創作之詳細說明及技術内容 下,然而所附圖式僅提供參考與說明用 作加以限制者。 6 M340561 請參閱第-至四圖所示,本創作係提供一種高功率發 光二極體,其主要包括一第一電極10、複數第二電極20、 孟屬底座30、複數絕緣套4〇、複數發光晶粒5〇、複數導 線60及I悔70。其中金屬底座%係由銅材質所一體壓製 成型、,並呈-圓形體,於其上表面開設有—圓形凹陷區 _ 3卜纟於凹陷區31内開設有貫穿金屬底座3〇的複數貫穿孔 32,此等貫穿孔32的數量與前述各電極1〇、加之數量相 修同,本實施例為四個,但不以此為限;另在金屬底座3〇底 β周、、彖向外延伸有—凸環33。第—電極及各第二電極加 係呈圓柱狀,而各絕緣套4〇則係套設於第一電極1〇及各第 -電=20外部,並將前述之各電極1()、别及絕緣套4〇組合 結構穿接在金屬底座3Q的各貫穿孔32内(如第四圖所 不),各發光晶粒50係可為相同或相異顏色的配置,並排 歹:佈叹於金屬底座30之凹陷區31内,而各導線則是分別 ⑩電連接各發光晶粒5〇及各電極1〇、2〇 ;該封膠係以注塑 成型方式覆蓋在金屬底座30之凹陷區3卜且包覆各發光晶 粒50及與各導線6〇,並於頂部成型有球面。 -此外,本創作之發光二極體更包括一散熱體8,此散 熱體8具有一圓形環81及從圓形環81之周緣向外呈放射狀 延伸出的複數散熱片82 ,此圓形環81係套接在金屬底座3〇 々外表面,且其底面係與凸環33頂面相互貼附接觸。 一綜上所述,當知本創作之高功率發光二極體已具有產 ^利用性、新穎性與進步性,又本創作之構造亦未曾見於 同類產ΠΠ及公開使用,完全符合新型專利申請要件,爰依 7 M340561 專利法提出申請。 【圖式簡單說明】 第一圖 係本創作發光二極體之立體分解圖。 第二圖 係本創作發光二極體之組合外觀圖。 第三圖 係第二圖之俯視圖。 第四圖 係第三圖之4-4剖視圖。 【主要元件符號說明】 <本創作> 第一電極10 第二電極20 金屬底座30 凹陷區31 貫穿孔32 凸環33 絕緣套40 發光晶粒50 導線60 封膠70 散熱體80 圓形環81 散熱片82M340561 VIII. New description: [New technology field] Especially a high-power hair generation system is related to a light-emitting diode light diode. [Prior Art] Eight because of the good brightness, long life, and many advantages of the light-emitting diode (10), it has been widely used by manufacturers in the room of the 纟 加 4 4; however, affecting the LED The most significant factor of the service life is that the material (10) can be used in the environment of moderate temperature (four), so the creator is to provide the research topic of the heat dissipation of the illumination I. The high-power light-emitting diode of the 卞 习 ,, which mainly comprises an insulating seat, first and second electrodes, a light-emitting die, a wire and a sealant, wherein the first electrode and the first electrode are respectively inserted into the insulating seat The particles are arranged on the plane of the insulating seat. The wires are respectively connected to the light-emitting die and the electrodes, and then covered on the plane of the insulating seat, and covered with the light-emitting die and the wires; thus, combined to form a high-power light-emitting diode Polar body. However, the conventional high-power light-emitting diode still has the following problems in practical use. Because this high-power light-emitting diode generates a large amount of heat in use, its heat is not easily dissipated to the fast. Externally, the service life of the illuminating crystal grains is greatly shortened; there is a real need for improvement. [New content] 5 M340561 Shishi--(4) 'is to provide a high-power luminous society" ..., • work, " Ding, and 7〇-才系, : to achieve the above purpose 'this creative department provides - High-power illuminating:: The setting of the straw by the metal base can dissipate the amount of lanthanum generated by the illuminating crystal grains, and greatly increase the ❹ 发光 | | | a second electrode, a two-pole metal base, an insulating sleeve, a plurality of light-emitting dies, a plurality of wires, and a sealant, wherein the two-striped-seat is open: a plurality of through-holes; the insulating sleeves are respectively sleeved on the second and the second Waiting for the second electrode to be externally' and the temples of the temples are attached to the metal base, and the granules are disposed on the upper surface of the metal base; the haisi wire is divided into the illuminating crystal grains and the material electrode: the metal a surface above the base and covering the light-emitting dies and the wires. Another object of the present invention is to provide a high-power light-emitting diode, which is guided by the mutual connection between the heat sink and the metal base, and can dissipate the heat generated by each of the light-emitting crystal grains to further extend the light-emitting crystals. The life of the pellet. A further object of the present invention is to provide a high-power light-emitting diode which is arranged in different colors by the respective light-emitting dies so as to illuminate various light rays to enhance the aesthetics. The present invention is not limited to the detailed description and technical contents of the present invention. However, the drawings are only for reference and description. 6 M340561 Please refer to the figures of FIG. 4 to FIG. 4 , the present invention provides a high power light emitting diode, which mainly comprises a first electrode 10 , a plurality of second electrodes 20 , a Meng base 30 , a plurality of insulating sleeves 4 , The plurality of luminescent crystal grains 5 〇, the plurality of wires 60 and I regret 70. The metal base % is integrally pressed and formed by a copper material, and is formed in a circular shape, and is opened on the upper surface thereof - a circular recessed area _ 3 纟 纟 纟 纟 纟 凹陷 凹陷 凹陷 凹陷 凹陷 凹陷 凹陷 凹陷 凹陷 凹陷 凹陷The number of the through holes 32 is the same as that of the above-mentioned electrodes 1 〇 and the number of the through holes 32, which are four in the embodiment, but not limited thereto; and in the bottom of the metal base 3, β, 彖Extending outwardly is a convex ring 33. The first electrode and each of the second electrodes are cylindrical, and each of the insulating sleeves 4 is sleeved on the first electrode 1 and each of the first electric = 20, and the respective electrodes 1 (), And the insulating sleeve 4 〇 composite structure is connected to each of the through holes 32 of the metal base 3Q (as shown in the fourth figure), and each of the illuminating crystal grains 50 can be configured in the same or different colors, and the sighs are: In the recessed area 31 of the metal base 30, each of the wires is electrically connected to each of the light-emitting dies 5 〇 and the respective electrodes 1 〇 and 2 分别 respectively; the sealant is overmolded in the recessed area 3 of the metal base 30 by injection molding. And each of the light-emitting dies 50 and the respective wires 6 包覆 are formed, and a spherical surface is formed on the top. In addition, the luminous diode of the present invention further includes a heat dissipating body 8 having a circular ring 81 and a plurality of fins 82 extending radially outward from the periphery of the circular ring 81. The ring 81 is sleeved on the outer surface of the metal base 3, and the bottom surface thereof is in contact with the top surface of the convex ring 33. In summary, when the high-power light-emitting diodes of Zhiben have been produced, utilized, and improved, the structure of this creation has not been seen in similar production and public use, and fully complies with the new patent application. The requirements are based on the 7 M340561 patent law. [Simple description of the diagram] The first picture is a three-dimensional exploded view of the created light-emitting diode. The second picture is a combined appearance of the created light-emitting diode. The third figure is a top view of the second figure. The fourth figure is a cross-sectional view of 4-4 of the third figure. [Description of main component symbols] <This creation> First electrode 10 Second electrode 20 Metal base 30 Recessed area 31 Through hole 32 Convex ring 33 Insulation sleeve 40 Light-emitting die 50 Wire 60 Sealing 70 Heat sink 80 Round ring 81 heat sink 82

Claims (1)

M340561 九、申請專利範圍: 1· 一種高功率發光二極體,包括: 一第一電極; 複數第二電極; 一金屬底座,開設有複數貫穿孔; 複數如緣套,分別套接於該第—電極及該 外^ ’且牙接在該金屬底座的該等貫穿孔内;、 “極M340561 IX. Patent application scope: 1. A high-power light-emitting diode comprising: a first electrode; a plurality of second electrodes; a metal base having a plurality of through holes; and a plurality of edge sleeves respectively sleeved in the first - an electrode and the outer portion and teeth are connected in the through holes of the metal base; 稷數發光晶粒,設置在該金屬底座的上表面; 稷數V線,分別電連接該等發光晶粒及該等電極;以 亚包覆該等發 復盖於邊金屬底座之上表面 光晶粒及該等導線。 其中該 Θ长項第1項所述之高功率發光二極 等貫穿孔的數量與該等電極的數量相同。 其中該 3如凊求項第}項所述之高功率發光二極 孟屬底座的底部設有凸環。 4.如請求項第3項所述之高功率 今屬底座的卜主I , ;^體’其中5亥 ^表面設有凹陷區’該封膠係封合於該凹陷區 括一二长項第4項所述之高功率發光二極體,里更包 St:該散熱體套接在該金屬底座的外表面I、並與 該凸裱相互貼附接觸。 I衣囬上/、 6.如請求項第5項 搿埶舻且右回功率發光二極體,其中該 月丈熱體具有一圓形環及從該 衣之周緣向外呈放射狀延 9 M340561 伸出的複數散熱片。 7·如明求項第3項所述之高功率發光二極體, 括-散熱體’該散熱體套接在該金屬底座 、更包 該凸環相互貼附接觸。 & 並與 8.如請求項第7項所述之高功率發光二極體,其中該 散熱體具有一圓形環及從該圓形環 /、人 伸出的複數散熱片。 《之周緣向外呈放射狀延a plurality of illuminating crystal grains are disposed on an upper surface of the metal base; a plurality of V lines are electrically connected to the illuminating crystal grains and the electrodes respectively; and the surface of the radiant metal cover is super-coated Grains and these wires. The number of through holes such as the high power light-emitting diodes described in item 1 of the long term is the same as the number of the electrodes. Wherein, the high-power light-emitting diode of the base of the present invention is provided with a convex ring at the bottom of the base. 4. The high power as described in Item 3 of the claim is the main I of the base, and the body of the body is provided with a recessed area. The sealant is sealed in the recessed area. The high-power light-emitting diode according to item 4, further comprising St: the heat sink is sleeved on the outer surface I of the metal base, and is in contact with the tenon. I clothing back up, 6. As requested in item 5, and right-back power LED, wherein the month has a circular ring and a radial extension from the periphery of the garment. M340561 Extending multiple heat sinks. 7. The high-power light-emitting diode according to item 3 of the present invention, comprising: a heat sink, wherein the heat sink is sleeved on the metal base, and the convex ring is further adhered to each other. And a high power light emitting diode according to claim 7, wherein the heat sink has a circular ring and a plurality of heat sinks extending from the circular ring. "The circumference of the circumference is radially extended 1010
TW97206086U 2008-04-10 2008-04-10 High-power light-emitting diode TWM340561U (en)

Priority Applications (1)

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TW97206086U TWM340561U (en) 2008-04-10 2008-04-10 High-power light-emitting diode

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Application Number Priority Date Filing Date Title
TW97206086U TWM340561U (en) 2008-04-10 2008-04-10 High-power light-emitting diode

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TWM340561U true TWM340561U (en) 2008-09-11

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418066B (en) * 2009-10-01 2013-12-01
TWI424131B (en) * 2009-11-09 2014-01-21 Lg Innotek Co Ltd Lighting device
US8829771B2 (en) 2009-11-09 2014-09-09 Lg Innotek Co., Ltd. Lighting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418066B (en) * 2009-10-01 2013-12-01
TWI424131B (en) * 2009-11-09 2014-01-21 Lg Innotek Co Ltd Lighting device
US8829771B2 (en) 2009-11-09 2014-09-09 Lg Innotek Co., Ltd. Lighting device
US9562680B2 (en) 2009-11-09 2017-02-07 LG Innotek., Ltd. Lighting device

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