M284670 四、創作說明（1) 【新型所屬之技術領域】 • 本創作係有關一種鍍膜裝置，特別是有關一種環保性 高及具有優良鍍膜的球體輻射局部鍍膜裝置。 【先前技術】 物理鍍膜法（Physics vapor deposition ;PVD) — 般 被廣泛的使用在半導體的製作上，如整流器、發光二極體 等。 如第一圖所示，然而大多數的製程都是將被鍍物42 晶圓）放置於市售之墊電阻絲蒸鍍機（Thermal C〇atery， 電子束蒸鍍機（E-Bcam Coater)或濺鍍機（sputter)之承盤 • 3上，而承盤3位置在蒸發源空間之上方，將欲蒸鍍成薄膜 物質（以下簡稱蒸鍍材料）置於此機器的蒸鍍源5之位置， 此蒸鍍源5係為一球體，此蒸鍍源5係由·一半徑51所形成的 半球形體53 ;接著開始抽真空，先將關閉蒸鍍機的門，等 到真空度到達設定值之後，再將蒸鍍源5内的蒸鍍材料加 …、、（用—電阻方式或E —Beam方式），使蒸艘材料蒸發汽化而生 ΐ 一蒸鍍路徑52，就可將蒸鍍材料鍍在被鍍^42欲鍍的位 >置上’也就是鍍在半導體材料的表面上。 iί ΐ，，如第二圖所示，取出己鍍鎮的被鍍物42，必需 再依…、微影技術，其步驟如〜（j) ·· (Α)將光阻均勻塗佈在被鍍物之薄膜上。 3ίϊί溫烤乾光阻’以增加光阻對紫外線的敏感度。 )將塗佈好的被鍍物置於光罩機（Mask 中，以M284670 IV. Creation Instructions (1) [New Technical Fields] • This creation is about a coating device, especially for a spherical radiation local coating device with high environmental protection and excellent coating. [Prior Art] Physical vapor deposition (PVD) is widely used in the fabrication of semiconductors such as rectifiers and light-emitting diodes. As shown in the first figure, however, most of the processes are to place the substrate 42 wafer on a commercially available pad-type wire evaporation machine (Thermal C〇atery, E-Bcam Coater). Or the sputter plate 3, and the retainer 3 is positioned above the evaporation source space, and the vapor deposition material (hereinafter referred to as vapor deposition material) to be vapor deposited is placed in the vapor deposition source 5 of the machine. Position, the vapor deposition source 5 is a sphere, and the vapor deposition source 5 is a hemispherical body 53 formed by a radius 51; then, vacuuming is started, and the door of the vapor deposition machine is turned off first, until the vacuum reaches the set value. Thereafter, the vapor deposition material in the vapor deposition source 5 is further added, and (by the resistance method or the E-Beam method), the vaporized material is evaporated and vaporized to produce a vapor deposition path 52, and the vapor deposition material can be used. The plated plate is placed on the surface to be plated. That is, it is plated on the surface of the semiconductor material. iί ΐ,, as shown in the second figure, the plated object 42 that has been plated is removed. , lithography technology, the steps such as ~ (j) · (Α) evenly spread the photoresist on the film of the object to be plated. 3ίϊί warm baked Barrier 'to increase the sensitivity of the photoresist to ultraviolet light.) Coated was placed in a good mask to be plated machine (Mask in order
第5頁 卜創作說明（2) =光罩對光阻進行紫外線曝光，光罩上的 :留在被鍍物上薄膜的位置及薄膜圖案，其它 流程中之化學银劑將薄膜去除，這樣的 程即疋傳統上選擇被鍍物之薄膜位置的方法。 區，光^^過紫外光線曝光後，就會形成曝光區及未曝光 (•°光阻14曾顯影液體中能將曝光區或未曝光區之光阻留下 下1質不同決定，曝光己留在薄膜上或未曝光區留 •匕留阻下對的/二需進行N2 (氮氣)烤箱中進行高溫烤乾，以增 加尤阻對溥膜的附著力。 m學：劑’選擇正確的化學藥品將無光阻之處的 將該位置之薄膜去除，僅留下有光阻保護位 (G) 被鑛物上的化學藥品洗淨。 (H) 將留在薄膜上的光阻去除。 (I )再將被鍍物的化學藥品洗淨。 C乾淨的〜將被鍍物吹乾，方可進行以下製程繼續完成 ϊΐϋΪ程的就是在選擇薄膜鍍在設計產時預定要留 ^ ’刖產界業，特·別是多層複雜之電路產品，大 需；生產半導體羞品。此方式由於程式複雜， :二u:間’對於簡單單層電路之產品，如發光二 極體，上述方式就顯得大材小用，有浪費之疑。 有鑑於此’本創作係針對上述之問題，提出一種球體 M284670 四、創作說明（3) 及困擾 輻射局部鍍膜裝置，LV 士 士 ^ M有克服傳統技術的問題 的，係 蒸鑛物 間，並 符合環 的，係 上所形 薄膜罩 圖案的 種球體 在提供 殘留於 可大量 保要求 在提供 成之蒸 之厚薄 優良性 輻射局 内設有一旋轉 一蒸鍍源，並 之蒸汽，且在 位於蒸鍍源的 上設有至少一 汽物質。 施例配合所附 的、技術内容 一種球體輻 電路以外部 節省清洗殘 〇 一種球體輻 鍍材料薄膜 而產生變化 大幅提高。 部鍍膜裝置 支撐組件， 以蒸鍍源為 旋轉支撐組 蒸鑛半徑上 基材整合體 的圖式詳加 、特點及其 _【新型内容】 . 本創作之主要目 裝置，因不需要處理 不但可以縮短製成時 程所需之化學藥品， 本創作之另一目 裝置，可使被鍍基材 、厚度，不因金屬 鍍材料所形成之薄膜 根據本創作，一 空腔室，此真空腔室 撐組件下方設置至少 一蒸鍍半徑散發欲鍍 少一承盤，此承盤係 置，而在承盤内表面 鍍源散發之欲鍍之蒸 B 底下藉由具體實 容易瞭解本創作之目 效0 射局部鍍膜 分的程序， 留蒸鍍物過 射局部鍍膜 圖案、位 ，進而使蒸 ，包括一真 且在旋轉支 中心旋轉以 件上設置至 之球面位 ，用以接蒸 說明，當更 所達成之功 【實施方式】 本創作係球體輻射局部鍍膜裝置，提供在被鍍物上製Page 5 Bu creation instructions (2) = reticle UV exposure of the photoresist, on the reticle: the position of the film on the object to be plated and the film pattern, the chemical silver agent in other processes removes the film, such Cheng is the method of traditionally selecting the position of the film of the object to be plated. Area, after exposure to ultraviolet light, the exposed area will be formed and unexposed (•° photoresist 14 can develop the liquid in the exposed area or the unexposed area to leave a different quality, the exposure has been Leave on the film or leave it in the unexposed area. • Retain the resistance and/or perform the high temperature baking in the N2 (nitrogen) oven to increase the adhesion of the film to the enamel film. The chemical removes the film at this location where there is no photoresist, leaving only the photoresist protection bit (G) to be washed by the mineral chemicals. (H) Remove the photoresist remaining on the film. I) Wash the chemical of the object to be plated. C Clean ~ The object to be dried by the plating process can be used to continue the process. The film is selected at the time of design and production is scheduled to be left. Industry, special, is a multi-layer complex circuit product, big need; production of semiconductor shame. This method is complicated by the program: two u: between the products of simple single-layer circuits, such as light-emitting diodes, the above way It seems to be overkill and wasteful. In view of this, this creation is aimed at The problem is described, a sphere M284670 is proposed, the creation instructions (3) and the turbulent radiation local coating device are used. The LV 士士士 M has the problem of overcoming the traditional technology, and is a vapor-bearing mineral, which conforms to the ring and is formed on the film. The spheroidal sphere of the hood pattern is provided with a rotary-vapor deposition source, and is provided with at least one vapor substance on the vapor deposition source, in the presence of a vapor deposition source which is provided in a large amount of radiation. The embodiment cooperates with the attached technical content that a spherical spoke circuit greatly improves the variation of the outer spherical cleaning material of the spherical radiation coating material. The coating device supports the assembly, and the evaporation source is the rotating support group on the evaporation radius. Detailed drawings and features of the substrate integrator and its [new content]. The main equipment of this creation, because it does not need to be processed, can not only shorten the chemicals required for the production time, another device of this creation, According to the present invention, a substrate, a thickness, and a film formed without a metal plating material, a cavity, the vacuum chamber At least one evaporation radius is arranged under the struts, and a plate is required to be plated. The susceptor is placed, and the plated source on the inner surface of the platter is sprayed under the steam B, which is easy to understand the purpose of the creation. 0 The procedure of partial coating is to leave the partial coating pattern and position of the evaporation material, so that the steaming, including a true and rotating in the center of the rotating branch, is set to the spherical position on the piece for steaming instructions, when The work achieved [Embodiment] This creative system is a spherical radiation local coating device, which is provided on the object to be plated.
第7頁 M284670Page 7 M284670
簡單電路之產品使用。本裝置如第三圖所示，由一真空腔 •至1 旋轉支撐組件2、複數個承盤3，複數個基材整合 體4以及蒸鍍源5所共同組成。其中旋轉支撐組件包含 •21、連接器19及支撐架22。而基材整合體4如第四圖所 示，則包含具有孔洞411及磁性之金屬薄膜罩41、 42，磁鐵43以及夾且44。 锻物 此支撐架22與承盤3連結，而基材整合體4放置於承盤 3内。由於本裝置之承盤3設計係以蒸鍍源5為球心（圓 心），蒸鍍源5為中心旋轉以一蒸鍍半徑51散發欲鍍之蒸 >飞’因此蒸錄源5係以蒸鍍半徑5 1形成一球面，故本裝置 之承盤3實際為此球面的一部份，較習知裴置（第一圖）之 承盤深度略淺、盤面較大，因此承盤3係裝置於以蒸鍍源5 為中心之半球形體53的球面位置上。 而置放於承盤3内的基材整合體4與蒸鍍源5的距離係 跟蒸鍍半徑51幾近相等，與實際上蒸鍍源5的蒸鍍物至各 基材整合體4的蒸鍍路徑52幾乎一樣，因此蒸^物可均勻 二致的分配給各基材整合體4。此外基材整合體*之夾具$ 4 鎖固於承盤3並夾持磁鐵43。且此基材整合體4之夾具^鎖 _固於承盤3並夾持磁鐵43。可穩定的吸附被鍍物42及金屬 薄膜罩41於承盤3上。由於金屬薄膜罩41上可選擇性的開 設不同孔洞以因應被鍍物42上不同形式電路的需求，前述 由蒸鍍源5出發之蒸鍍物42經過蒸鍍路徑52至金屬薄膜罩 41時’通過在金屬薄膜罩41上的孔洞411而蒸鍍於被鍍物 42上所設定電路的位置，被鍍物42上其他的位置，則因金The use of simple circuit products. The apparatus is composed of a vacuum chamber • to a rotary support unit 2, a plurality of retainers 3, a plurality of substrate integrators 4, and an evaporation source 5 as shown in the third figure. The rotary support assembly includes a 21, a connector 19 and a support frame 22. As shown in the fourth figure, the substrate integrated body 4 includes a metal film cover 41 having a hole 411 and a magnetic shape, 42, a magnet 43 and a clip 44. Forged material The support frame 22 is coupled to the retainer 3, and the substrate integrated body 4 is placed in the retainer 3. Since the tray 3 of the device is designed with the evaporation source 5 as the center of the circle (the center of the circle), the evaporation source 5 is rotated at the center to emit a vapor to be plated at a vapor deposition radius of 51. Therefore, the source 5 is The evaporation radius 5 1 forms a spherical surface, so the retainer 3 of the device is actually a part of the spherical surface, and the retaining depth is slightly shallower and the disk surface is larger than the conventionally placed (first drawing), so the bearing plate 3 The device is placed at a spherical position of the hemispherical body 53 centered on the vapor deposition source 5. The distance between the substrate integrated body 4 placed in the retainer 3 and the vapor deposition source 5 is approximately equal to the vapor deposition radius 51, and the vapor deposition of the vapor deposition source 5 is actually transferred to each substrate integrated body 4. The vapor deposition path 52 is almost the same, so that the vapor can be uniformly distributed to the respective substrate integrators 4. Further, the jig $4 of the substrate integrator* is locked to the retainer 3 and holds the magnet 43. And the fixture of the substrate assembly 4 is fixed to the retainer 3 and sandwiches the magnet 43. The plated object 42 and the metal film cover 41 are stably adsorbed on the retainer 3. Since the metal film cover 41 can selectively open different holes to meet the requirements of different forms of circuits on the object 42 to be plated, the vapor deposition material 42 from the evaporation source 5 passes through the evaporation path 52 to the metal film cover 41. The position of the circuit set on the object 42 to be deposited is deposited by the hole 411 in the metal film cover 41, and the other position on the object 42 is gold.
M284670 〖、創作說明（5) rm:無法將蒸錄金屬物蒸锻於被锻物仏。換 上口有電路所的孔洞在金屬薄膜上造成在被鍍物42 •則因、金屬薄膜會；；鍍物42蒸鑛於上 用本裝置在被鍍：42 :絮；i蒸鍍物42殘留其上。因此利 留於電路以外部分的ίΠ路時，不需要處理蒸鍍物殘 夫旦銘省生a I的私序，不但可以縮短製成時間，並可 要求。’“殘留蒸鍍物過程所需之化學藥品，符合環保 丨·面，ΐ :V Λ本裝置之設計乃以蒸鍍原理，承盤3為球 ;體=丰的Λ鑛物42為球面切線，而蒸鍍材料路徑為 丨琛體牛仫，丰徑與切線呈現垂直（幾何原理费 蒸鍍材料與被鍍物42表面/ 之 永為垂直，因此蒸4膜罩(Metai Mask)孔洞 Mask)孔、η 鍍材枓疋垂直進入金屬薄膜罩（Metal k)孔洞而鍍於被鍍物42表面上，所以# ^ u 鍍材料所形成之薄膜®垒二所以被鍍物42上之蒸 罩之㈣位置、厚度都不會因金屬薄膜 圖案的優良性。 孕乂了保戍蒸錄材枓所形成之薄膜 實你存丨约上所述之實轭例僅為本創作之較佳實施例，藉由 解本創作之Πί ϊ其的在使熟習該技術者能暸 Ξίϊ之内谷並據以實施ΐ並非用以局限本創作實施之 = 運用本創作申請專利範圍所述之構造、形狀、 特徵及精神所為之均等變化及修，^ ^ ^ ^ ^ ^ ^ ^ ^ 請專利之範圍内。 S應包括於本創作申 第9頁 M284670 圖式簡單說明 【圖式簡單說明】1 第一圖為蒸鍍機之結構示意圖。 、二圖為習知技術蒸鍍之流程圖。 •第三圖為本創作之蒸鍍機之結構示意圖。 第四圖為本創作之基材整合體之結構分解圖。 【主要元件符號說明】M284670 〖, creation instructions (5) rm: steamed metal can not be steamed and forged into the forged object. The hole in the circuit is replaced on the metal film to cause the object to be plated 42. Then, the metal film is formed; the plated material 42 is vaporized on the device to be plated: 42: floc; i vapor deposition 42 Residue on it. Therefore, when it is left in the circuit outside the circuit, it is not necessary to deal with the vapor-deposited material, and the private sequence of a I can be shortened, and the manufacturing time can be shortened and required. 'The chemicals required for the residual evaporation process are environmentally friendly. ΐ :V Λ The design of the device is based on the principle of evaporation, the plate 3 is the ball; the body = abundance of the strontium mineral 42 is the spherical tangent. The path of the vapor deposition material is a scorpion burdock, and the diameter of the vapor deposition is perpendicular to the tangent (the geometric principle is that the evaporation material and the surface of the object to be plated 42 are always perpendicular, so the hole of the Metai Mask hole Mask) The η plating material 枓疋 vertically enters the metal film cover (Metal k) hole and is plated on the surface of the object 42 to be plated, so the film formed by the # ^ u plating material is the base plate 2 of the plated material 42 (4) The position and thickness are not due to the superiority of the metal film pattern. The film formed by the preservation of the steamed material is the preferred embodiment of the present invention. The creation of the 解 ϊ ϊ 在 使 使 使 使 使 该 该 该 该 该 该 该 该 该 该 该 并 并 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = The spirit is equal change and repair, ^ ^ ^ ^ ^ ^ ^ ^ ^ Please within the scope of the patent S should be included in the creation of the application page, M284670. Simple description of the drawing [Simple description of the drawing] 1 The first picture shows the structure of the evaporation machine. The second picture shows the flow chart of the conventional technology evaporation. The schematic diagram of the structure of the vapor deposition machine of the present invention. The fourth figure is the structural exploded view of the substrate integration body of the creation.
第10頁 1 真空腔室 2 旋囀支撐組件 3 承盤 4 基材整合體 5 蒸鍍源 21 馬達 19 連接器 22 支撐架 411 孔洞 41 金屬薄膜罩 42 被鍍物 43 磁鐵 44 夾具 51 蒸鍍半徑 53 半球形體 5 2 蒸鍍路徑Page 10 1 Vacuum chamber 2 Rotary support assembly 3 Retainer 4 Substrate integration 5 Evaporation source 21 Motor 19 Connector 22 Support frame 411 Hole 41 Metal film cover 42 Electrode plate 43 Magnet 44 Clamp 51 Evaporation radius 53 hemispherical body 5 2 evaporation path