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TWM271311U - DC voltage converter - Google Patents

DC voltage converter Download PDF

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Publication number
TWM271311U
TWM271311U TW93215338U TW93215338U TWM271311U TW M271311 U TWM271311 U TW M271311U TW 93215338 U TW93215338 U TW 93215338U TW 93215338 U TW93215338 U TW 93215338U TW M271311 U TWM271311 U TW M271311U
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TW
Taiwan
Prior art keywords
voltage
diode
series
patent application
scope
Prior art date
Application number
TW93215338U
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Chinese (zh)
Inventor
Huei-Lin Lai
Jin-Ping Wei
Original Assignee
L & K Precision Tech Co Ltd
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Publication date
Application filed by L & K Precision Tech Co Ltd filed Critical L & K Precision Tech Co Ltd
Priority to TW93215338U priority Critical patent/TWM271311U/en
Publication of TWM271311U publication Critical patent/TWM271311U/en

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Description

M271311 七、指定代表圖: (一)本案指定代表圖為 :第(, 二)圖0 (二)本代表圖之元件符號簡單說明: 電路系統 2 昇壓電路 20 穩壓版(MOSFET) 21 穩壓二極體 22 二極體 23 NPN型電晶體24 二極體 25,26 電容 27 八、新型說明: 【新型所屬之技術領域】 ”本創作係有關於一種直流電壓轉換器,特別是指一種經過昇 壓電路之後健師持麵_的錢值,以避免電路系統内的 電子組件承又過南電屋而有損毀顧慮之直流電壓轉換器。 【先前技術】 、 *按’時下有相當多的電子產品如··隨身聽、數位相 機、無線電話以及可攜式的醫療設備等,其内部 ^體電路Clntegmed Glrcuit ;丨◦普遍細低供應電屢經 $歼壓電路來提供足_碍電壓。然而,昇壓率(b咖馳^ 貫際上是線性的走向,因此,當供應電壓高於一特定值,此有效 的昇壓率將導致高於所預期的電壓值,而極容易造成該電子組件 =毀。請進-步參閱第-圖來瞭解,如_示為與本創作有關 應用於錢麵轉換11上的電«統,該電路纽1中的_版 M271311 10為金屬-氧化物-半導體電晶體(Metal Oxydum Semi-Conductor FET ;以下簡稱M0SFET),係與昇壓電路u相連通,藉該昇壓 電路11可將低供應電壓昇高,以提供該M0SFET 1〇具有足夠的 工作電壓來工作,其中該MOSFET 10的工作電壓從閘極至源極的 電壓(下簡稱Vgs)已設置不可超過20 V才可正常運作,進言之, 如第一圖所示,當輸入12V時,昇壓電路U的電源(VDD點) 由VCC、D4加上C8反饋電壓來供給m及φ作動,此時VA的 電壓約等於VC012V, 而VDD的電壓則為24v,是以,qi的M271311 VII. Designated Representative Map: (1) The designated representative map in this case is: (2) Figure 0 (II) The components of this representative map are simply explained: Circuit system 2 Booster circuit 20 Voltage regulator version (MOSFET) 21 Constant voltage diode 22 Diode 23 NPN transistor 24 Diode 25, 26 Capacitor 27 8. Description of the new type: [Technical field to which the new type belongs] "This creation is about a DC voltage converter, especially referring to A kind of DC voltage converter after the booster circuit, to prevent the electronic components in the circuit system from passing through the South Electric House and causing damage and worry. [Previous technology], * Press' Currently Quite a lot of electronic products such as · Walkmans, digital cameras, wireless phones, and portable medical equipment, etc., its internal circuit Clntegmed Glrcuit; 丨 普遍 generally low power supply through the $ J compression circuit to provide sufficient _ Hinder voltage. However, the step-up rate (bcachi ^ is generally linear, so when the supply voltage is higher than a certain value, this effective step-up rate will result in a higher than expected voltage value, and Can easily cause this Sub-component = Destroyed. Please refer to the figure for further information. For example, _ is shown to be related to the creation of the electrical system applied to the money surface conversion 11. The _ version M271311 10 in the circuit button 1 is metal-oxidized. A material-semiconductor transistor (Metal Oxydum Semi-Conductor FET; hereinafter referred to as M0SFET) is connected to the booster circuit u. The booster circuit 11 can increase the low supply voltage to provide the MOSFET 10. Sufficient operating voltage to work, in which the operating voltage of the MOSFET 10 from the gate to the source (Vgs for short) has been set to not exceed 20 V for normal operation. In other words, as shown in the first figure, when the input At 12V, the power supply (VDD point) of the boost circuit U is supplied by VCC, D4 and C8 feedback voltage to supply m and φ. At this time, the voltage of VA is approximately equal to VC012V, and the voltage of VDD is 24v, so, qi's

Vgs電壓為VDD-VA=12V,可提供ui = 12V正常的工作電遷。 然而’當輸入20V以上時,VDD的電壓則為4〇v以上, 以,該Q1的Vgs電壓為vdD_va=2〇v以上,此時Ql與m〇sf 會有被過高工作電壓破壞毀損的可能。 【新型内容】 能约避免轉換器内電子組件因過度 的顧慮。 本創作直流電顯翻之目的,即在提供—種可將經過昇壓 電路之後仍_維持在所期望的電驗之直流電壓轉換器,藉以 度昇高的工作電壓,而造成損毀 為達到上述目的, 本創作直流電壓轉換器之特徵,在於該鐘Vgs voltage is VDD-VA = 12V, which can provide ui = 12V normal working electrical migration. However, when the input is more than 20V, the voltage of VDD is more than 40v. Therefore, the Vgs voltage of Q1 is more than vdD_va = 2ov. At this time, Q1 and m〇sf will be damaged by excessive working voltage. may. [New content] It can avoid excessive concerns about the electronic components in the converter. The purpose of this creative direct current display is to provide a DC voltage converter that can maintain the desired electrical test after the boost circuit, thereby increasing the operating voltage and causing damage to achieve the above. Purpose, the characteristic of this creation DC voltage converter is that the clock

•極體’其找麵二極體魅聯於昇壓 二極體則與該穩壓二極體相互串聯。 M271311 【實施方式】 6月參閱第一圖’本創作直流電壓轉換器,係包括:設有複數 &電接腳的基座(未圖示),及紅於該基座内與該料電接腳適 當連接的電路系統2,該電路系統2中的昇壓電路2〇係串接於工 作電壓設定為2GV以下的穩壓版(MOSFET) 21,且,於昇壓電 路的電晶體Q2與Q3之間,更進一步並聯一個穩壓二極體(ζ_ Diode ; ZD) 22,該穩壓二極體22係採用15v規格,用於防止工 作電壓從閘極至源極的電壓(Vgs)超過2〇 V。另,設有二極體23, 係與穩壓二極體22相互串聯,可採用〇.7V規格配合穩壓二極體 22將工作電壓的Vgs箝位於20V以下。又,設有npn型電晶體 24,其集極241係與該穩壓二極體22並聯,而射極242則串接於 電源輸入端的負極電流30。再者,設有相串聯的兩個二極體 25, 26 ’係串接於NPN型電晶體24的射極242,並且與一個電容 27相並聯。 續請配合第二圖參閱,藉如上的電路配置,當電壓輸入2〇v 以上時,VDD的電壓為VCC+C8=40V以上,此時,Q1的Vgs為 VDD-VA=20V以上,而當Vgs為20V以上時在迴路卡該穩壓二極體 22及二極體23則被啟動,將Vgs箝位在15.7V,即,該穩壓二極體 22的15V加上二極體23的0.7V。因而,使得工作電壓不會超過qi 的20V以上,是以,迴路就能提供穩壓版(m〇sfET) 21正常的運 作,不會造成Q1或穩壓版(M0SFET) 21有損毀顧慮,而可確實 解決習知者的缺點。另,串聯的兩個二極體25, 26及電容27則可以 M271311 配合當運針的電㈣财高時,作騎存辦的功用。 綜上所述,本創作直流電壓轉換器確能達到創作之目的,符合 新型專利要件,m所述者僅為梢作之擁實關而已大 飾與變化,仍應包含於本專利申請範圍 内。 【圖式簡單說明】 第一圖刺知直流電壓轉換n的昇壓電路圖。 第二圖係本創作直流電壓轉換器的昇壓電路圖》 ❿ 【主要元件符號說明】 電路系統 2 昇壓電路 20 穩壓版(MOSFET) 21 穩壓二極體 22 二極體 23 NPN型電晶體24 二極體 25,26 電容 27 7• Polar body ’: its face-up diode is connected to the boost diode in series with the voltage-regulating diode. M271311 [Embodiment] Please refer to the first picture in June for this creative DC voltage converter, which includes: a base (not shown) provided with a plurality of & electrical pins, and the red and The circuit system 2 where the pins are properly connected. The booster circuit 20 in the circuit system 2 is connected in series to a voltage regulator (MOSFET) 21 with an operating voltage set to 2 GV or less, and a transistor in the booster circuit. Between Q2 and Q3, a voltage-stabilizing diode (ζ_ Diode; ZD) 22 is further connected in parallel. The voltage-stabilizing diode 22 adopts a 15v specification to prevent the working voltage from the gate to the source voltage (Vgs ) Exceeds 20V. In addition, a diode 23 is provided, which is connected in series with the voltage-stabilizing diode 22, and a 0.7V specification can be used with the voltage-stabilizing diode 22 to clamp the working voltage Vgs below 20V. In addition, an npn-type transistor 24 is provided, the collector 241 of which is connected in parallel with the voltage-regulating diode 22, and the emitter 242 is connected in series to the negative current 30 of the power input terminal. Furthermore, two diodes 25, 26 'connected in series are connected to the emitter 242 of the NPN transistor 24 in series, and a capacitor 27 is connected in parallel. Please refer to the second figure for reference. With the above circuit configuration, when the voltage input is more than 20v, the voltage of VDD is VCC + C8 = 40V or more. At this time, the Vgs of Q1 is VDD-VA = 20V or more. When Vgs is more than 20V, the voltage-stabilizing diode 22 and diode 23 are activated in the loop card. Vgs is clamped at 15.7V, that is, 15V of the voltage-regulating diode 22 plus the diode 23 0.7V. Therefore, the working voltage will not exceed 20V of qi. Therefore, the circuit can provide the normal operation of the voltage-stabilized version (m0sfET) 21, which will not cause Q1 or voltage-stabilized version (M0SFET) 21 to be damaged, Can solve the shortcomings of the learner. In addition, the two diodes 25, 26 and capacitor 27 in series can be used with M271311 when the electric power of the needle is high, and it can be used as a riding depository. In summary, this creative DC voltage converter can indeed achieve the purpose of creation, and meets the requirements of the new patent. The ones described in m are only the details of the masterpiece and have been greatly decorated and changed. They should still be included in the scope of this patent application. . [Brief description of the figure] The first figure is a step-up circuit diagram of a DC voltage conversion n. The second diagram is the step-up circuit diagram of the original DC voltage converter. ❿ [Description of main component symbols] Circuit system 2 Step-up circuit 20 Voltage regulator (MOSFET) 21 Voltage regulator diode 22 Diode 23 NPN type Crystal 24 Diode 25, 26 Capacitor 27 7

Claims (1)

M271311 九、申請專利範圍: 1· 一種直流電壓轉換器,可將低輸入電壓昇高以提供足夠的工作電 壓,包括:設有複數導電接腳的基座,及設置於該基座内與該等 導電接腳適當連接的電路系統,該電路系統中的昇壓電路係串接 於工作電壓設定為20V以下的穩壓版(MOSFET),其特徵在於·· 該昇壓電路進一步包含並聯於昇壓電路的兩電晶體之間,而 相互串聯的一個穩壓二極體(2;enerDiode ; ZD)及二極體,可將 工作電壓的箝位於20V以下,以確保穩壓版(MOSFET)可始終 保持正常的工作狀態。 2·如申請專利範圍第1項所述直流電壓轉換器,其十該穩壓二極體 係可採用15至18V規格。 3·如申請專利範圍第2項所述直流電壓轉換器,其中與穩壓二極體 串接的二極體,係可採用0.5至0.7V規格。 4·如申請專利範圍第3項所述直流電壓轉換器,其中進一步設有 NPN型電晶體,其集極係與該穩壓二極體並聯,而射極則串接於 電源輸入端的負極電流。 5.如申請專利範圍第4項所述直流電壓轉換器,其中進一步設有相 串聯的兩個二極體,係串接於NPN型電晶體的射極,並且與一 個電容相並聯。M271311 9. Scope of patent application: 1. A DC voltage converter that can increase the low input voltage to provide sufficient working voltage, including: a base provided with a plurality of conductive pins, and a base provided in the base and connected to the base. A circuit system such as a conductive pin that is properly connected. The booster circuit in this circuit system is connected in series to a voltage regulator (MOSFET) with an operating voltage set below 20V. It is characterized in that the booster circuit further includes a parallel connection. A voltage regulator diode (2; enerDiode; ZD) and a diode connected in series between the two transistors of the boost circuit can clamp the working voltage below 20V to ensure the voltage regulator version ( MOSFET) can always maintain normal operating conditions. 2. As described in item 1 of the scope of patent application, the voltage regulator diode system can adopt 15 to 18V specifications. 3. The DC voltage converter according to item 2 of the scope of patent application, wherein the diode connected in series with the voltage-regulating diode can adopt a specification of 0.5 to 0.7V. 4. The DC voltage converter according to item 3 of the scope of the patent application, further comprising an NPN transistor, the collector of which is connected in parallel with the voltage regulator diode, and the emitter is connected in series to the negative current of the power input . 5. The DC voltage converter according to item 4 of the scope of patent application, further comprising two diodes connected in series, connected in series to the emitter of the NPN transistor, and connected in parallel with a capacitor.
TW93215338U 2004-09-27 2004-09-27 DC voltage converter TWM271311U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI399027B (en) * 2009-05-27 2013-06-11 Microjet Technology Co Ltd Voltage transformer and driving system thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI399027B (en) * 2009-05-27 2013-06-11 Microjet Technology Co Ltd Voltage transformer and driving system thereof

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