M261951 八、新型說明： 【新型所屬之技術領域】 本創作是有關於一種調諧導波管耦合之微波電漿源裝 置，尤指一種可使用於半導體加工，與各種工業零組件的電 表面改貝加工，使微波源的能量有效率饋入電漿腔體内， 達到產生高密度電漿的目的。 【先前技術】 按，向密度微波電漿源廣泛應用在半導體蝕刻、電漿鍍 膜及離子注入的主要設備中，由於電漿密度高，製程所需時 間少，產能增加，有效降低成本，對於提昇產業競爭力有莫 大幫助。因此，在國外有相當多的相關研究機構，投入相當 多的資金及人力進行高密度微波電漿源的開發工作，其中， 最受注目的是微波電子磁旋諧振（E|ectron Cyclotron Resonance ’簡稱ECR)電漿源簡稱微波電漿源。 而該微波電漿源之動作原理係於毫托爾（milli-torr)的低 壓氣體腔體中，將微波源的電磁波能量由導波管經過阻抗匹 配器送進電漿内，在合於r微波電子磁旋諧振」條件的磁場 區内，該電子能直接從電場吸收微波能量，並將附近之氣體 離化成各種電漿粒子，產生高密度電漿源。而於製造過程 中’任何製程條件之變化所造成的阻抗突變，則將導致微波 功率的反射以及高譜波之產生，而導致降低電磁波與電聚孝馬 M261951 合之效率，進而引起電漿密度不穩定或熄滅，因而造成製裎： 中產品的良率降低甚至報廢。由此可見，微波與電漿之間的· 阻抗匹配技術成為高密度微波電漿源的關鍵技術。 而一般習用之微波電漿源（如第8圖所示），其微波源部 份大都從微波能源4 1產生，在方導波管4内以ΤΕι◦模式作 為傳輸’經過迴路器4 2 (circulator)之隔離，使微波能源4 1與負載，再經過反射波量測裝置4 3 (Directions丨M261951 8. Description of the new type: [Technical field to which the new type belongs] This creation relates to a microwave plasma source device coupled with a tuned waveguide, especially a type of electrical surface that can be used in semiconductor processing and various industrial components. Processing, so that the energy of the microwave source is efficiently fed into the plasma cavity, so as to achieve the purpose of generating high-density plasma. [Previous technology] According to, the density microwave plasma source is widely used in the main equipment of semiconductor etching, plasma coating and ion implantation. Due to the high plasma density, the process takes less time, the production capacity increases, and the cost is effectively reduced. Industry competitiveness is of great help. Therefore, there are quite a few related research institutes abroad, investing a considerable amount of funds and manpower to develop high-density microwave plasma sources. Among them, the most noticeable is the microwave electron magnetic resonance (E | ectron Cyclotron Resonance 'for short ECR) plasma source is referred to as microwave plasma source. The operation principle of the microwave plasma source is in a low-pressure gas cavity of milli-torr. The electromagnetic energy of the microwave source is sent from the waveguide to the plasma through the impedance matcher. In the magnetic field region under the condition of "microwave electron magnetic resonance resonance", the electron can directly absorb microwave energy from the electric field, and ionize the nearby gas into various plasma particles to generate a high-density plasma source. In the manufacturing process, the sudden change in impedance caused by any process conditions change will result in the reflection of microwave power and the generation of high-spectrum waves, which will reduce the efficiency of combining electromagnetic waves with the electric poly-Takama M261951, and then cause plasma density Unstable or extinguished, resulting in control: Yield of Chinese products is reduced or even scrapped. It can be seen that the impedance matching technology between microwave and plasma has become a key technology for high-density microwave plasma sources. For the conventional microwave plasma source (as shown in Fig. 8), most of the microwave source is generated from the microwave energy source 41, and it is transmitted in the square waveguide 4 in the TES mode through the looper 4 2 ( Circator) isolation, so that microwave energy 41 and the load, and then through the reflected wave measurement device 4 3 (Directions 丨
Coupler)，及阻抗匹配元件4 4 (該阻抗匹配元件4 4通常是籲 二螺桿調譜器3-StubTuner)，而成為輸出TEl〇模式之電磁 波4 5 ; 而在早期的設計中（如第9圖所示），該電磁波5穿過四 分之一波長介質窗5 1，傳輸進入低氣壓電漿區5 2 ;微波 電子磁旋諧振（ECR)之螺線管電磁鐵線圈5 3則環繞於其 外部。所以從微波源與電漿阻抗匹配的角度來看，因為該導 波管、四分之一波長介質窗與電漿的阻抗都不同，故，造成籲 匹配不易之現象，且微波能量會反射於調諧器4 4和四分之 一波長介質窗5 1之間，因此，隨著電漿濃度的變化，該微 波反射能量會敏感的改變，其能量耦合效率與穩定度都差。 再如美國專利第5111111號之專利（如第i 〇圖所示）， 〃係包含一偏極化為6，將電磁波6 1轉換成右旋圓偏波 (RHCP)6 2，經由阻抗轉換器，就是四分之一波長厚的介 M261951 質真空窗6 3，進入電衆區64 ,·藉轴向磁場之作用將右旋 圓偏波6 2引至微波電子磁旋諧振（ecr) (875g)處吸收 掉口此〃要四刀之；皮長介質窗的阻抗選得對，幾乎沒 有反射波之產生。這種介質阻抗轉換器的優點是結構簡潔， 故性能穩定、可靠性高。若仍有需要細微調節匹配時，還可 以去調整微波電子磁旋譜振（ECR)之磁場值6 5做到完全 的匹配。這個創作從理論到實際純完備。只是需要加上一 個右旋圓偏波轉換器，且四分之—波長介質窗的工藝要求也 很高’工程上U很經濟’若是右旋波轉換不完全或是四分 之波長介質窗做得不夠好，仍然會有額外反射波需要處 理。且該美國專利係使用導波管型之電㈣，其將右旋圓偏 (RHCP)TEl1波由微波電子磁旋諧振（ECR)磁場的最強端 透過四分之一波長介質窗饋入電漿，RHCPTE”波像於順著 磁力線到達微波電子磁旋譜振（ECR)區，在此將能量傳給 電水在彳政波與電漿間主要是靠一個四分之一波長厚的四分 之波長介質窗6 3，將電漿的低阻抗提昇到導波管的阻 抗，解決了大部分阻抗匹配的問題，故能產生大面積、均勻 性么之南密度穩定電漿。但是它對於具有電抗性的電磁波負 載，並不能完全匹配為其缺點。 另如美國專利第4727293號之諧振腔型電漿源，（如第1 1圖所不）’其係在調諧器之後，加入一個高Q值之諧振腔 7，調在諧振的位置上，在諧振腔7一端用石英盤罩7丄隔 出免&碟形電襞區，外加永磁多角形（multi-cusp)磁環7 2 M261951 子磁魏振（ecr) μ。從微波與電聚耦合觀 m㈣好的㈣腔能儲存累積電磁波能量，再以提高 二田^方式增加電聚加熱速率，對變動阻抗的匹配彈性很 將區均耦合效率也很高，只是諧振腔的位置一定要緊靠電 諧也較麻煩，又不容易得到均勻大面積的設計。 «電㈣載旁作譜振腔匹配，微波反射損失低， 這 點十分可取。 將，t_於上述各習用之結構中，^管是導波管型電 j或^振腔型錢源在使用上都有優缺點，因此，若能 =兩者的優點’可以將微波與電漿之間的阻抗匹配設計得 【新型内容】 工：：’本創作之主要目的係在於，可使用於半導體加 二，與各種工業零組件的㈣表面改質加工， 二 虿有效率饋入電漿腔體内，達到產 Λ / "、的月匕 J產生同松度電聚的目的。 本創作之另一目的係在於，可使本創 電場模式（TE mode)的微波傳送方式，不，能適用橫向 及電漿濃度範圍的電漿製程中，不須晷二艮見的微波功率 維持高密度及高穩定性的電聚。、$ _外調節’即可 本創作之又一目的係在於，可增 _ 曰 系用向密度電 M261951 疋功旎’而且製造成本也相對降低 可廣泛地應用在半導體製程及各種 Η間早方便’ 改質（鑛膜及離子注入）加工上，對於提高=件的電漿表面 本，達到提昇市場競爭力有莫大幫助。〃月^降低製造成 為達上述之目的’摘作係—種簡導波 電漿源裝置，可使用於半導體 "'' 漿声面Π T · ¥體加工與各種工業零組件的電 漿源設備，其係藉由一且有幫二 =:之繼微波電 八’賀，有系統之真空電漿室、一盥直 工電漿室連接之可調長度圓導波管、以及—與可調長产圓導 波官連接之方形導波管所組成又又 ^ ^ ^ ^ ± 坎，忑了5周長度圓導波管係與之 月、t ’且該可調長度81導波㈣由—可調證振腔 及-四》之-波長介f窗所構成’並㈣可調長度圓導波管 j接有4體里控制系統’另於該可調長度圓導波管外 二又有累線s電磁鐵，該方形導波管係與可調長度圓導波 :連接’且該方形導波管係由—與之可調譜振腔連接之導波 g周&累桿 與導波官調諧螺桿連接之反射波量測裝置、· 及-與反射波量測裝置連接之微波能源所組成。可使微波源 的能量有效率饋入電聚腔體内’達到產生高密度電黎的目 的。 【實施方式】 將二芩閱『第1〜7圖』所示，係本創作之高密度微波電 水源系、’先示思圖、本創作之TE模式高密度微波電漿源的阻 9 M261951 抗匹配結構示意圖、本創作之TE模式阻抗匹配模型和等效 電路示意圖、本創作之ΤΕ模式實驗微波電漿源示意圖、本 創作反射功率比隨耦合腔長度之改變情形、本創作反射功率 比隨四分之一波長介質窗厚度之改變情形、本創作反射功率 比Ik線型波、右旋或左旋圓偏極波之變化。如圖所示：本創 作一種調諧導波管耦合之微波電漿源裝置，其係由一具有幫 浦系統1 1之真空電漿室2、一與真空電漿室i連接之可調 長度圓導波管2、以及一與可調長度圓導波管2連接之方形 導波官3戶斤組成；而本創作係將該可調長度圓導波管2以及_ 四刀之一波長介質窗2 2，結合在緊鄰電漿的可調諧振腔2 1内且。亥真空電聚室1以及可調長度圓導波管2之可調諧 振腔2^、四分之一波長介質窗22，係為相同樣之口徑， 成為-簡潔的設計，對存有反射波的㈣條件也能達到阻抗 匹配的效果，使微波電漿源的結構既簡明緊湊，操作也簡單 方便。 且 上述所提之該真空電漿室！係具有—幫浦系統 該真空電漿室1中係可設置有一處理架丄2; 該可調長度圓導波管2係與上述之真空電漿室工連 ^該可調長度圓導波管2係由—可朗振腔21及一四 ::柱質窗3 2所構成，並於該可調長度圓導波管2 管2外η^體ί里控制系統2 3，另於該可調長度圓導波 外螺線管電磁鐵2 4，該可調諧振腔2丄係可 M261951 為緊鄰四分之一波長介質窗2 2及直介 — 之—波長介質窗22係、可為石英板至/且该四分 為3.8、厚度係取用—為最佳反，：：，板:时^ 可兔处# 吏°亥可调靖振腔2 1係 為：依據反射波量測裝置3 2之結果，當採用te”模式 :::調諧振腔21的長度約此模式波半波長的整數倍，定 配：’另該可調長度圓導波管2係可加入一偏振轉 的該偏振轉換器2 5以特定的角度，適糊源 9而k $同的ΤΕ11模式，並依據反射波量測裝置3 之=果1出最佳匹配點，而該偏振轉換器2 5係可轉換 办”右旋或左旋圓偏極化波’而其係利用—塊四分之一 十長見18.4公分長的石英板放在與丁£"線型波電場成負 艺正45度角的方向上’即可得到右旋或左旋圓偏極化波； ^違方形導波官3係與上述可調長度圓導波管2連接，且 :亥^形導波官3係由-與上述之可調譜振腔2 i連接之導 fS :周谐螺桿3 1、-與導波管調諧螺桿3 1連接之反射波 !測裝置3 2、及一與反射波量測裝置3 2連接之微波能源 μ 3斤、、且成如疋，藉由上述之結構構成一全新之調譜導波 管耦合之微波電漿源裝置。 本創作之調諧導波管耦合之微波電漿源裝置（如第1圖 所不），其主要之動作原理係利用該幫浦系統i丄，將真空電 水至1内抽到微托爾（mjcr〇-t〇rr)的基礎真空度，配上一個氣 體流量控制系統2 3，將真空電漿室1内氣壓控制在毫托爾 M261951 右；而環繞電浆源還有-個螺線管電磁鐵 Ί i值、取A 1KG的轴向磁通密度，且該微波能源3 方！導波管3及其上的反射波量測裝置3 即曰本創白螺杯31，傳輸進入可調長度圓導波管2， 周長度圓導波管2，且該可調長度圓導波 及緊鄰雷四刀之""波長介質窗22、偏振轉換器25、 諧振腔21;而基材則放在處理架12 而古^ ΕΜ式之高密度電漿源的可調長度圓導波管2， 而有關其細節部分係說明如下·· "^式微波南密度電毁源的可調長度圓導波管2結 構如弟2圖所示，盆将白杯 > μ Q ^ ，、係包括一個可調長度之可調長度圓導波 :可調長度圓導波管2係為-端開口的譜振腔之設 ㈣於4可㈤長度圓導波管2下面開口端連接有—作為阻抗 ^換用之四分之—波長介質窗2 2，而該四分之-波長介質 :2 2係可為石央板，而此石英板除了用作電漿室之真空封 板之外巾可作為微波能源進人真空電聚室1的輸入口， 擔任Τ微波源與電聚源間的阻抗轉換11的角色，其材 貝/、旱度之迖疋係為關鍵，而其係以介電係數為3·8、厚度 係取用1.9Cm為最佳。至於真空電聚室1及螺線管電磁鐵2 4人傳統電毁源要求相同。以下敘述其卫程細節： °月再配合參閱第1圖，其中，所用之微波源係利用微波 爐用之微波能源3 3，而該微波能源3 3係可提供 M261951 2.45GHZ/5GGW之連續微波功率；其所f之轴向磁場由螺線 管電磁鐵2 4產生100到1000高斯的磁通密度，·而其除了 能產生微波電子磁旋諧振（ECR)電漿外，也具有幫助大面 積均勻電漿的功能，並能沿著磁力線的分佈將電漿導引到下 游基材處。通常將1KG磁通密度安排在四分之一波長介質 由2 2位置，以TE模式微波源送進直徑】8cm的可調長度 圓導波管2中，四分之一波長介質窗2 2(其介電係數為3.8) 取用1.9cm厚，接近四分之一波長，作阻抗轉換器；5〇_ 微波功率在1毫托爾的真空度時可以得到6xi〇ii/cm3的氬氣籲 電衆密度，此時，可調諧振腔2工.的長度可為7 3cm，略大 ，半波長。至於TE”線偏極化波可以經由内含之偏振轉換 器2 5轉換成TE”右旋或左旋圓偏極化波；其工程實際是 用-塊四分之-波長寬，18.4公分長的石英板放在與丁^” 線型波電場成負或正45度角的方向上，即可得到右旋或左 方疋圓偏極化波’為免阻抗陡變常使用斜面漸增的偏振轉換器 2 5 ’尖端指向上游微波源。 2之阻抗匹配原理說 至於本創作之可調長度圓導波管 明如下： 該微波能源3 3從上游經過導波管調諸螺桿3】，進入 作為場耗合H用的可調長度圓導波f 2，再穿過四分之 長：質：2 2後進入磁化電漿真空電漿室丄中。本創作與傳 統¥波s型電毁源不同之處’就在於這個可調長度的可調長 13 M261951 度圓導波管2，既可以變換丁E”波的偏極化模式，又有諳 振腔的功能。 而a亥第3圖係表示本創作所使用te模式高密度電漿源 之可凋長度圓導波官2以及其等效電路模型。假設電漿的阻 =為Zp，，四分之一波長介質窗前看進去就成Zi=Zw2/Zp ; 八中zw疋四分之一波長介質窗段的特性阻抗。高密度電漿 的阻抗Zp很低，不易與可調長度圓導波管2匹配，經過四分 之波長’丨貝固後阻抗Zi得到相當的提昇，易與可調長度圓鲁 V波g 2 Zc匹配。從該可調長度圓導波管2入口向電漿端看 去，其等效阻抗ZL隨可調長度圓導波管2之長度匕而變， ZL Zc{Z,+jZctan(泠 L)}/{Zc+jZitan(/5L)}，這時調諧的原則， 就是以功率反射比·Pr /Pf最小為目標。舉實例來說明本創作 的可調長度圓導波管2設計，當軸向場微波電子磁旋諧振 (ECR )電漿源正常工作時，由於電漿的阻抗值Zp相當低 約為〜38歐姆與圓導波管阻抗Zc =45〇歐姆之間的阻抗相差 甚夕，因此必須選用一片厚度為四分之一波長介質窗22來修 提昇微波看到電漿的阻抗Zi，經過計算後顯示微波經四分之 一波長介質窗2 2所看到的電漿阻抗提昇到乙=9〇〇歐姆，， 此h反射係數「LlZi—z。)/ (Zj+Zc)從0_9降到〇·3，反射功率· 比Pr/Pf=「l2，由〇·8]降到〇·〇9 ;剩下的約30%的微波反 射部分則使用可調諧振腔2 1匹配設計來處理，其方法乃藉 由可調長度圓導波管2之可調諧振腔2 1長度，當調到譜振 之長度時，原反射波會被再反射回電漿去，多吸收幾次就能 14 M261951 改善匹配效率·，此時調節圓導管内長度為半波長的整數倍， 正是^周諧振腔2 1的長度。當譜振時反射的能量會儲存在 :调谐振腔2 1之螺線管電磁鐵中，供多次反射運用，不必 每次反射回上游端微波能源3 3，故連方形導波管3上的迴 路器都不再需要。這部份的設計可以使料效電路圖中的可 調電感電容器來說明，電毁源中的儲能與反射有關的等效電 抗部分jwB，都可以經由調出諧振條件的方式，將 純電阻性電聚而吸收掉，達到阻抗匹配的效果。八 成 上而14種匹g己阻抗的方法在可調長度圓導波管2内部之 可調譜振腔2 1中進行，處理的電磁波又是可調諧振腔2工 基本頻率早—模式的電磁波，所以其可調長度圓導波管2之 阻抗匹配的效率和穩定性都很理想。 —而以上述之可調長度圓導波管2設計方式結合了導波 ，官型四分之-波長的四分之—波長介質窗2 2阻抗轉換技 術’配合上可調諧振腔2 i的阻抗匹配彈性，所以能將微波 ”電聚的能量_合效率提高，電漿的穩定性也明顯改進；即 使不採用螺線管電磁鐵2 4之電磁鐵磁場和偏振轉換器2 f之右旋圓偏波的理想組態，也能獲得滿意的匹配效果。正 常工作條件下反射量主要來自機械上的仙，如在單端饋入 及四刀之-波長介質窗2 2後的阻抗突變，或是操作氣壓 和^密度等工作條件的改變的緣故’這時’採用可調譜導 波官的場耦合器之設計，對匹配阻抗是很方便的。 M261951 1有關本創作之實驗及數據如下所述： 配合麥閱第4圖，該第4圖有關可調長度圓導波管2 十i丨疋以3mm厚紫銅板製成内徑18〇mm，長250mm 的^筒，作為可調長度圓導波管2及可調諧振腔2 1，而其 一端係利用—塊厚1〇咖，外徑176mm之的黃銅板26， 中央處開方孔（1〇9mm長x54mm寬）以配合WR430可調長 度圓‘波s 2輸入TE!◦模式微波；而此黃銅板2 6之外緣 有溝奴其上套著具彈性及傳導性佳的〇形環襯墊2 7 ( 9)作成可罪的滑動式接觸（Sliding Contact)。如此， 之叹计為的是便於可調諧振腔2丄以及可調長度圓導波管 2之匹配。 而為了驗證本創作的電漿源性能，本實驗的電漿源設備 使用彈性變化較大的結構。其中，可調諧振腔2丄採用可調 長度的了凋長度圓導波管2，它的活動式四分之一波長介質 窗2 2容許方便的改變四分之一波長介質窗的厚度以及選 擇電磁波的模式；在可調諧振腔2 i外可選不同的螺線管電 j鐵2 4 ;有關ΤΕΊ1模式的導波管型電漿源的設計參數與 第2圖相同。 〃 該第4圖中，為所設計的實驗用微波電漿源，而表一則 列出其操作參數範圍。它使用單組線圈的電磁鐵2 4，產生 發散型軸向螺線管電磁鐵；線圈内孔徑彳9.2公分，外徑38 4 公分厚12公分，圈數21。目，·當供應_安培時在中央轴 16 M261951 心量到的磁通密度為1050高斯 可調譜振腔2 1是直徑17公分，長5公分的短圓柱形， 下游出口直徑14公分。微波能源3 3如前節所示提供 2.45GHz，50〜500WTEl〇模式微波連續功率，經由反射功 率Pr反射波量測裝置3 2，進到可調長度圓導波管2，它 如上節所示是一 3mm厚的紫銅圓筒内徑18公分長25 = 分’該紫銅圓管包於可調長度圓導波管2外圈，㈣提升二 導性、提升效率使微波損失小；而其端板56可以在轴 動，能改變可調言皆振腔21的長度。在這裡的丁E”線偏極 化波可以經由内含之偏振轉換器2 5轉換成％右 旋圓偏極化波；其偏振轉換器2 5卫程實際是用—塊7 = =分之-波長(約4公分.)寬，18.4公分長的偏振轉換二2 :放在與ΤΕ”線型波電場成負或正扑度角的方向 付到右旋或左旋圓偏極化波；為纽 之呈帆形偏振轉換器25,尖端指向上游微波 ，可^-塊厚度等於四分之—波長的四分之—波長二 :板2 ^从幵，以求㈣與導波管阻抗匹配。為試驗本言: 螺^且ΐ匹配性能’特將—永磁多極磁場環2 4Α來盘‘ 螺線以磁鐵2 4交換，以為對比之用。；；白 Α是用稀土賴㈣磁鐵作成一個， =4 公分’外徑26公分，厚6公分 H9.2 兩端夹緊以防移位。磁鐵極面；_槽内’ 大於《仟高斯，波見2公分，磁通密度 波电子磁紅5皆振（ECR)磁區位於磁 M261951 ，面刖1.5至2.0公分處，相鄰磁極間隔小於3公分。磁鐵 衣放在大基座板上，其内通以冷卻水流。另有通氣道引導 氣體流量控制系統2 3之工作氣體到達真空電漿室工並且 -周圍均勻供氣，供氣系統包括氨氣瓶、降麼節流闊1 4 1及0〜50 seem之流量控制器1 4。 /水源下游真空電漿室丄接到真空幫浦系統1 1，可以 2先抽到1C) tGIT的基礎麼力’氬氣進人電漿室可以維持 ^^的真空度於妒根”…卜在處理架 將f 極架1 2 1且該，探極架H i係連接有-電 :里二IU 3 ’其係為依量測儀器，可用以量測電漿特性， 加^ =、溫度、濃度、能量、量測電漿品質等，而該探極 : 在垂直方向上作外控移動，也可以在軸心轉 動’以便於量測錢密度的空間分布。電子溫度和密度是用 分a=g m u丨「独極法和單雜法量測。用以導出電漿參數以及 閱第5圖，其係顯示出丁E”模式時，反射功率 整二1長?：變之情形:顯示在腔長為半波長 正是ϋ長.里取小，弟—個譜振點最好，相鄰諧振點差距 而第6圖係顯示出ΤΕ! 一波長介質窗2 2厚度改變 1模式時，反射功率比隨四分之 之情形：顯示窗厚在四分之一波 18 M261951 長時反射量最小； 另該第7圖係顯示出ΤΕ〗ι模式時，偏振轉換器2 5之 線型波、右旋或左旋圓偏極化波在1〇〇w到5〇〇w間反射功 率比的變化情形；顯示右旋圓偏極化波吸收最好，可低於百 刀之一，線型波或左旋波稍差，但反射功率比也都低於百分 之五；這些結果證明可調諧導波管之性能。Coupler), and impedance matching element 4 4 (this impedance matching element 4 4 is usually a two-screw modulator 3-StubTuner), and it becomes an electromagnetic wave 4 5 outputting TE10 mode; and in the early design (such as the 9th (Shown in the figure), the electromagnetic wave 5 passes through the quarter-wave dielectric window 5 1 and is transmitted into the low-pressure plasma region 5 2; the solenoid electromagnetism coil (ECR) solenoid solenoid 5 3 is surrounded by Its external. Therefore, from the perspective of impedance matching between the microwave source and the plasma, because the impedance of the waveguide, the quarter-wave dielectric window, and the plasma are all different, this makes it difficult to match and the microwave energy is reflected on Between the tuner 44 and the quarter-wave dielectric window 51, therefore, as the plasma concentration changes, the microwave reflected energy will change sensitively, and its energy coupling efficiency and stability are poor. Another example is the US patent No. 5111111 (as shown in figure i 〇). The actinide system contains a polarization of 6, which converts the electromagnetic wave 6 1 into a right-handed circularly polarized wave (RHCP) 6 2 through an impedance converter. , Is a quarter-wave-thick dielectric M261951 mass vacuum window 63, which enters the electric mass region 64, and the right-handed circularly polarized wave 6 2 is introduced to the microwave electronic magnetic resonance resonance (ecr) (875g) by the action of an axial magnetic field. It is necessary to use four blades to absorb the mouth. The impedance of the skin-long dielectric window is selected so that there is almost no reflection wave. The advantage of this dielectric impedance converter is its simple structure, so it has stable performance and high reliability. If you still need to fine-tune the matching, you can also adjust the magnetic field value of the microwave electron magnetic resonance spectrum (ECR) 6 5 to achieve a complete match. This creation is complete from theory to practice. Just need to add a right-handed circular polarization converter, and the quarter-wavelength dielectric window process requirements are also very high 'Engineering U is economical' If the right-handed wave conversion is not complete or the quarter-wavelength dielectric window is made Not good enough, there will still be extra reflections to deal with. And this U.S. patent uses a waveguide-type electric chirp that feeds right-handed circular deflection (RHCP) TEl1 waves from the strongest end of the microwave electron magnetic resonance (ECR) magnetic field into the plasma through a quarter-wave dielectric window. "RHCPTE" wave image travels along the magnetic field line to the microwave electron magneto-rotational spectrum (ECR) region. Here, the energy is transferred to the electro-water. It is mainly between a quarter-wavelength and a quarter-wavelength. The dielectric window 63 increases the low impedance of the plasma to the impedance of the waveguide, and solves most of the impedance matching problems. Therefore, it can produce a stable plasma with a large area and uniform density. However, it is resistant to electricity. The electromagnetic wave load cannot be fully matched for its shortcomings. Another example is the resonant cavity plasma source of US Patent No. 4727293 (as shown in Figure 11). It is added after the tuner with a high Q value. Resonant cavity 7 is adjusted at the resonance position. A quartz disk cover 7 is used at one end of the cavity 7 to isolate the & dish-shaped electric area, plus a permanent magnet multi-cusp magnetic ring 7 2 M261951 sub-magnet. Wei Zhen (ecr) μ. Viewing the coupling of microwave and electric convergence It can store the accumulated electromagnetic wave energy, and then increase the electro-condensation heating rate by increasing the Ertian ^ method. The matching elasticity to the variable impedance is very high, and the coupling efficiency is also high. However, the position of the resonant cavity must be close to the electrical resonance and it is more troublesome. It is not easy to obtain a uniform large-area design. «Spectrum cavity matching is performed next to the electrical load, and the microwave reflection loss is low. This is highly desirable. In the conventional structures mentioned above, the tube is a waveguide tube type There are advantages and disadvantages in the use of electric j or cavity-type money sources. Therefore, if you can = the advantages of the two, 'the impedance matching between microwave and plasma can be designed [new content]. The main purpose is that it can be used in semiconductor plus two, and the surface modification processing of various industrial components, and the second one can be efficiently fed into the plasma cavity to achieve the same product. The purpose of the degree of electricity gathering. Another purpose of this creation is to enable the microwave transmission method of the original electric field mode (TE mode). Microwave Power Maintaining high-density and high-stability electro-polymerization. $ _External adjustment can be another purpose of this creation is to increase _ the use of direct-density electricity M261951 疋 power 旎 and manufacturing costs are relatively reduced can be widely It can be used in semiconductor processes and early and convenient modification and modification (mineral membrane and ion implantation) processing, which is of great help to improve the plasma surface cost of parts and increase market competitiveness. The above-mentioned purpose is an abstraction—a simple guided-wave plasma source device that can be used in the semiconductor plasma surface Π T · ¥ plasma processing equipment and various industrial components. And there are two == follow the microwave power eight 'congratulations, a system with a vacuum plasma chamber, a straight-line plasma chamber connected adjustable length waveguide, and-with the adjustable length of the circular waveguide officer The connected square wave guide tube is composed of ^ ^ ^ ^ ± ridge, and has a length of 5 weeks for a circular wave guide tube system and the moon, t ', and the adjustable length of 81 wave guides—the adjustable cavity and -Four-of-the-wavelength-dimensioned f-window is composed of 'parallel adjustable-length circular waveguide J' with 4 bodies connected The control system 'is equipped with a s-line electromagnet outside the adjustable-length circular waveguide. The square-waveguide system is connected to the adjustable-length circular-waveguide: and the square-waveguide system consists of- A guided wave g-cycle connected to an adjustable-spectrum cavity & a reflected wave measuring device connected to a guided rod and a guided-wave official tuning screw and a microwave energy source connected to the reflected wave measuring device. The energy of the microwave source can be efficiently fed into the electro-polymerization cavity 'to achieve the purpose of generating high-density electrical contact. [Embodiment] As shown in [Figures 1 to 7], it is the high-density microwave electric water source system of this creative work, 'first show map, TE mode high-density microwave plasma source resistance 9 M261951 Schematic diagram of anti-matching structure, TE mode impedance matching model and equivalent circuit diagram of this creation, schematic diagram of microwave plasma source of TE mode experiment of this creation, reflection power ratio of this creation with coupling cavity length, reflection power ratio of this creation varies with Changes in the thickness of the quarter-wave dielectric window, and the change in the reflected power ratio of this creative Ik linear wave, right-handed or left-handed circular polarized wave. As shown in the figure: a microwave plasma source device coupled with a tuned waveguide is created by a vacuum plasma chamber 2 with a pump system 11 and an adjustable length circle connected to the vacuum plasma chamber i. The waveguide 2 and a square-wave waveguide 3 connected to the adjustable-length circular waveguide 2 are composed of three households; and this creation is based on the adjustable-length circular waveguide 2 and one of the four-wavelength dielectric windows 22, combined in the tunable resonant cavity 21 adjacent to the plasma. The vacuum condenser chamber 1 and the tunable resonant cavity 2 ^ of the adjustable-length circular waveguide 2 and the quarter-wavelength dielectric window 22 are of the same caliber, and they have a simple design, and have reflected waves. The chirp condition can also achieve the effect of impedance matching, which makes the structure of the microwave plasma source simple and compact, and the operation is simple and convenient. And the vacuum plasma chamber mentioned above! It has a pump system. The vacuum plasma chamber 1 can be provided with a processing frame 丄 2; the adjustable-length circular waveguide 2 is connected to the above-mentioned vacuum plasma chamber ^ the adjustable-length circular waveguide 2 is made up of-Kelang cavity 21 and 14 :: columnar window 32, and the control system 2 3 outside the adjustable length circular waveguide 2 tube 2 body, and the other The length-adjustable circular guided wave outer solenoid electromagnet 2 4 is a tunable resonant cavity 2 which can be M261951 directly adjacent to a quarter-wavelength dielectric window 22 2 and a direct medium—of which—the wavelength-dielectric window 22 series can be a quartz plate. To / and the quartile is divided into 3.8 and the thickness is taken—for the best reaction, ::, plate: 时 ^ 可 兔 处 # °° Adjustable Jing cavity 2 1 Series is based on the reflected wave measurement device 3 As a result, when the te ”mode ::: tuned cavity 21 is approximately an integer multiple of half the wavelength of this mode, the configuration is: 'In addition, the adjustable length circular waveguide 2 can be added with a polarization The polarization converter 2 5 is at a specific angle, suitable for the same TE9 mode as the source 9 and k $, and the best matching point is obtained according to the reflection wave measuring device 3 = 1. The polarization converter 2 5 is convertible "Right-handed or left-handed circularly polarized waves" and its use-a quarter of a quarter long 18.4 cm long quartz plate is placed in a direction with a negative 45 ° angle with the linear electric field 'You can get right-handed or left-handed circularly polarized waves; ^ The square-wave guided wave system 3 is connected to the above-mentioned adjustable-length circular wave-guide tube 2, and: the helical-shaped guided wave system 3 is provided by- Guided fS connected to the spectrum tuning cavity 2 i: peripheral harmonic screw 3 1,-reflected wave connected to the waveguide tuning screw 3 1! Measuring device 3 2, and a microwave energy source connected to the reflected wave measuring device 3 2 μ 3 kg, and it is like 疋, through the above-mentioned structure constitutes a brand-new microwave plasma source device coupled to the tuned waveguide. The main principle of the microwave plasma source device (as shown in Figure 1) coupled with the tuned waveguide in this creation is to use the pump system i 抽 to pump vacuum electric water to 1 microtor ( mjcr〇-t〇rr) basic vacuum degree, coupled with a gas flow control system 23, the pressure in the vacuum plasma chamber 1 is controlled to the right M261951 mtor; and there is a solenoid around the plasma source Electromagnet Ί i value, take A 1KG axial magnetic flux density, and this microwave energy is 3 times! The guided wave tube 3 and the reflected wave measuring device 3 thereon are called the original white screw cup 31, and transmitted into the adjustable-length circular waveguide 2 and the peripheral-length circular waveguide 2 and the adjustable-length circular waveguide and The wavelength medium window 22, the polarization converter 25, and the resonant cavity 21 are located next to the four blades of the Thunderbolt, and the substrate is placed on the processing frame 12. The adjustable-length circular guided wave of the ancient high-density plasma source of the EM type The tube 2 is described in detail as follows: " The structure of the adjustable-length circular waveguide 2 of the microwave-type South-Density Electrical Destruction Source is shown in Fig. 2 and the pot will be white cup > μ Q ^, The system includes an adjustable-length adjustable-length circular waveguide: The adjustable-length circular waveguide 2 is a spectral cavity with an open-end set at 4 open-length circular waveguide 2 and the open end is connected to —A quarter of the wavelength used as the impedance ^ —wavelength dielectric window 22, and the quarter-wavelength medium: 2 2 can be a stone central plate, and this quartz plate is used as a vacuum sealing plate for the plasma chamber. The outer towel can be used as the input port for microwave energy to enter the vacuum polymerization chamber 1. It plays the role of impedance conversion 11 between the microwave source and the polymerization source. Cloth system is critical, and it is based in a dielectric constant of 3.8, the optimum thickness 1.9Cm based access. As for the vacuum electro-polymerization chamber 1 and the solenoid electromagnet 2, the traditional electric destruction source requirements for 4 people are the same. The details of its health process are described below: ° Refer to Figure 1 for cooperation. The microwave source used is the microwave energy source 3 3 for microwave ovens, and the microwave energy source 3 3 series can provide continuous microwave power of M261951 2.45GHZ / 5GGW. ; The axial magnetic field generated by the solenoid electromagnet 24 produces a magnetic flux density of 100 to 1000 Gauss, and besides it can generate microwave electron magnetic resonance (ECR) plasma, it also has a large area to help uniform The function of the plasma, and it can guide the plasma to the downstream substrate along the distribution of magnetic lines of force. The magnetic flux density of 1KG is usually arranged in a quarter-wavelength medium from the 22 position, and the TE mode microwave source is used to feed the diameter] 8cm adjustable-length circular waveguide 2 with a quarter-wavelength dielectric window 2 2 ( Its dielectric coefficient is 3.8) Take 1.9cm thick, close to a quarter of the wavelength, as an impedance converter; 5〇_ Microwave power can get 6xi〇ii / cm3 of argon at a vacuum of 1 mTorr Density of electricity, at this time, the length of the tunable cavity 2 can be 7 3cm, slightly larger, half-wavelength. As for TE ”linearly polarized waves can be converted into TE” right-handed or left-handed circularly polarized waves through the included polarization converter 25; its engineering is actually-quarter block-wavelength wide, 18.4 cm long A quartz plate is placed in a direction that is negative or positive at a 45-degree angle to the linear electric field of Ding ^ ”, and a right-handed or left-handed circularly polarized wave can be obtained. The 2 5 'tip points to the upstream microwave source. The impedance matching principle of 2 says that as for the adjustable length circular waveguide of this creation, the following is explained: The microwave energy source 3 3 passes from the upstream through the waveguide to the screw 3] and enters as field loss The adjustable length circular guided wave f 2 for H, then passes through a quarter of the length: quality: 2 2 and enters the magnetized plasma vacuum plasma chamber 丄. This creation is different from the traditional ¥ wave s-type electrical destruction source The point is that this adjustable-length adjustable-length 13 M261951 degree circular waveguide 2 can both transform the polarization mode of the E-wave and the function of a chirped cavity. The third figure of ahai shows the witherable circular waveguide 2 of the te mode high-density plasma source used in this work and its equivalent circuit model. Assume that the resistance of the plasma is Zp, and Zi = Zw2 / Zp when looking in front of the quarter-wavelength dielectric window; the characteristic impedance of zw 疋 quarter-wavelength dielectric window in the middle of the eighth. The impedance Zp of the high-density plasma is very low, and it is not easy to match with the adjustable-length circular waveguide 2. After a quarter wavelength, the impedance Zi is significantly improved, and it is easy to match the adjustable-length circular V wave g 2 Zc matches. Looking from the entrance of the adjustable-length circular waveguide 2 toward the plasma end, its equivalent impedance ZL varies with the length of the adjustable-length circular waveguide 2, ZL Zc {Z, + jZctan (LingL)} / {Zc + jZitan (/ 5L)}, the principle of tuning at this time is to aim at the minimum power reflection ratio, Pr / Pf. Take an example to illustrate the design of the adjustable-length circular waveguide 2 of this creation. When the axial-field microwave electron magnetic resonance (ECR) plasma source works normally, the impedance value of the plasma, Zp, is quite low, about ~ 38 ohms. The impedance is very different from the impedance of the circular waveguide Zc = 45 ohms, so a quarter-wavelength dielectric window 22 must be selected to enhance the microwave to see the impedance Zi of the plasma. After calculation, the microwave is displayed. The impedance of the plasma seen through the quarter-wave dielectric window 22 is increased to B = 900 ohms, and the h reflection coefficient “LlZi—z.) / (Zj + Zc) decreases from 0_9 to 0.3 The reflected power ratio Pr / Pf = "l2, reduced from 0 · 8] to 0 · 09; the remaining 30% of the microwave reflection part is processed using an adjustable resonant cavity 21 1 matching design, the method is By adjusting the length of the tunable cavity 21 of the adjustable length circular waveguide 2, the original reflected wave will be re-reflected back to the plasma when adjusted to the length of the spectral vibration, and it will absorb 14 more times to improve the matching. Efficiency. At this time, the length of the circular tube is adjusted to an integer multiple of half the wavelength, which is exactly the length of the resonant cavity 2 1. The energy will be stored in the solenoid electromagnet of the resonant cavity 21 for multiple reflection applications, and it is not necessary to reflect back to the upstream microwave energy 3 3 each time, so even the circuit device on the square waveguide 3 is not Need again. The design of this part can make the adjustable inductance capacitor in the material-effect circuit diagram to illustrate that the equivalent reactance part jwB related to the energy storage and reflection in the electrical destruction source can be adjusted by the resonance condition. Pure resistive electricity gathers and absorbs, to achieve the effect of impedance matching. Bacheng and 14 kinds of g impedance methods are performed in the adjustable spectrum cavity 21 inside the adjustable length circular waveguide 2 and processed electromagnetic waves. It is the electromagnetic wave of the tunable cavity 2 whose fundamental frequency is early—mode, so the impedance matching efficiency and stability of the adjustable-length circular waveguide 2 are ideal. And the adjustable-length circular waveguide described above is ideal. 2 The design method combines guided waves, official quarters-quarters of wavelength-wavelength dielectric window 2 2 Impedance conversion technology 'matches the impedance matching flexibility of the tunable resonant cavity 2 i, so that microwaves can be electrically polymerized Improved energy efficiency Qualitative significantly improved; i.e. over configuration so that the right-handed circularly polarized wave 2 f of the magnetic field of the electromagnet 24 and the polarization converter does not employ the solenoid electromagnet, matching can be obtained satisfactory results. Under normal working conditions, the amount of reflection mainly comes from the mechanical fairy, such as the sudden change in impedance after single-end feeding and four-knife-wavelength dielectric window 22, or the change of operating conditions such as operating pressure and density. 'The design of the field coupler with adjustable spectral guided wave is very convenient for matching impedance. M261951 1 The experiments and data related to this creation are as follows: Cooperate with Mai Reading Figure 4, which shows the adjustable-length circular waveguide 2 10i 丨 疋 made of 3mm thick copper plate with an inner diameter of 18mm, A 250mm long tube is used as the adjustable-length circular waveguide 2 and the adjustable cavity 21, and one end is made of a brass plate 26 with a thickness of 10 cm and an outer diameter of 176 mm. A square hole is opened in the center. (109mm long x 54mm wide) to match the WR430 adjustable length circle 'wave s 2 input TE! ◦ mode microwave; and this brass plate 2 6 has grooves on the outer edge and a flexible and conductive The o-ring pads 2 7 (9) make a sinful sliding contact. In this way, the sigh is calculated to facilitate the matching of the adjustable cavity 2 谐振 and the adjustable-length circular waveguide 2. In order to verify the performance of the plasma source in this creation, the plasma source equipment in this experiment uses a structure with large elastic changes. Among them, the tunable resonant cavity 2 丄 adopts an adjustable length round waveguide 2, and its movable quarter-wave dielectric window 22 allows the thickness and selection of the quarter-wave dielectric window to be conveniently changed. The mode of electromagnetic waves; different solenoids can be selected outside the adjustable cavity 2 i; iron 2 4; the design parameters of the waveguide-type plasma source in the TEZ 1 mode are the same as in Figure 2. 〃 Figure 4 shows the designed microwave plasma source for experiment, and Table 1 lists the operating parameter range. It uses a single set of electromagnets 2 4 to produce a divergent axial solenoid electromagnet; the inner diameter of the coil is 彳 9.2 cm, the outer diameter is 38 4 cm, the thickness is 12 cm, and the number of turns is 21. At the time of supply, the magnetic flux density measured on the central axis 16 M261951 is 1050 Gauss. The adjustable cavity 2 1 is a short cylinder with a diameter of 17 cm and a length of 5 cm. The downstream outlet diameter is 14 cm. Microwave energy source 3 3 provides 2.45GHz, 50 ~ 500WTElO mode microwave continuous power as shown in the previous section, and passes the reflected power Pr reflected wave measurement device 3 2 into the adjustable-length circular waveguide 2 as shown in the previous section. A 3mm thick copper cylinder with an inner diameter of 18 cm and a length of 25 = min. The copper round tube is wrapped in the outer ring of an adjustable-length circular waveguide 2 to improve the conductivity and reduce the microwave loss; and its end plate 56 can be moved on the shaft, which can change the length of the adjustable cavity 21. Here Ding E ”linearly polarized wave can be converted into% right-handed circularly polarized wave by the included polarization converter 25; its polarization converter 2.5 is actually used-block 7 = = points -Wavelength (approximately 4 cm.). Polarization conversion 2 with a length of 18.4 cm. 2: Place the polarized wave with right-handed or left-handed circularly polarized waves in a direction that is negative or positive with the TE electric field. It has a sail-shaped polarization converter 25, the tip of which points to the upstream microwave, and the thickness of the block can be equal to one-fourth-one-quarter of wavelength-wavelength two: plate 2 ^ from 幵 to find the impedance of ㈣ and the waveguide. In order to test the words: helical and matching performance 'special general-permanent magnet multipole magnetic field ring 2 4A to disk ‘spiral is exchanged with magnet 24 for comparison purpose. ;; White Α is made of a rare-earth Laiyong magnet, = 4 cm ’, outer diameter is 26 cm, and thickness is 6 cm. H9.2 is clamped at both ends to prevent displacement. The surface of the magnet pole; _in the slot is greater than "仟 Gauss, see 2 cm, the magnetic flux density wave magnetic red 5 all resonance (ECR) magnetic zone is located at the magnetic M261951, the surface is 1.5 to 2.0 cm, the distance between adjacent magnetic poles is less than 3 cm. The magnet garment is placed on a large base plate with a cooling water flow inside. Another air channel guides the working gas of the gas flow control system 2 3 to the vacuum plasma chamber and provides uniform gas supply around the air supply system. The gas supply system includes ammonia cylinders, lowering throttles 1 4 1 and 0 ~ 50 seem flows. Controller 1 4. / The vacuum plasma chamber downstream of the water source is connected to the vacuum pump system 1 1 and can be pumped to 1C. 2) The basic force of tGIT 'argon entering the plasma chamber can maintain a vacuum of ^^ at the root of envy. In the processing frame, connect the f-pole frame 1 2 1 and the probe frame H i is connected to-electricity: Li 2 IU 3 'This system is a measuring instrument that can be used to measure the characteristics of the plasma, plus ^ =, temperature , Concentration, energy, measurement of plasma quality, etc., and the probe: external control movement in the vertical direction, can also be rotated on the axis' in order to measure the spatial distribution of money density. The electronic temperature and density are divided into points a = gmu 丨 "Single pole method and single impurity method measurement. Used to derive plasma parameters and read Figure 5, which shows Ding E" mode, the reflected power is 2 to 1 long ?: Change situation: display When the cavity length is half the wavelength, it is exactly the length. The smaller one, the best one is the spectral point, and the gap between adjacent resonance points is different. Figure 6 shows the TE! A wavelength medium window 2 2 thickness changes 1 mode, The reflected power ratio varies with the quarter: the thickness of the display window is the smallest in the quarter wave 18 M261951. The longest reflection amount is shown in the figure 7; In the mode, the change of the reflected power ratio of the linear wave, right-handed or left-handed circularly polarized wave of the polarizing converter 25 between 100w and 500w; it shows that the right-handed circularly polarized wave absorbs best. It can be lower than one of the hundred knives. The linear wave or the left-handed wave is slightly worse, but the reflected power ratio is also less than five percent; these results prove the performance of the tunable waveguide.
紅上所述，本創作調諧導波管耦合之微波電漿源裝置可 有效改善習用之種種缺點’而達到用於開發高密度微波電聚 源系統，使微波能源能有效率的輕合饋入電聚腔體内以產生 高密度均句電漿源。且微波源與電聚源的搞合，在很寬的微 ΐ功率及錢濃度範财，•能維持匹配，不須要常作調 即，使试波咼密度電漿源成為既方便又經濟的電漿萝程工 :所Γ:本創作之産生能更進步、更實用、更符合徒用者As mentioned above, the microwave plasma source device coupled with the tuned waveguide of this creation can effectively improve the various shortcomings of the conventional method, and it can be used to develop a high-density microwave electricity focusing source system, so that microwave energy can be efficiently fed into the electricity The cavity is gathered to generate a high-density uniform plasma source. And the combination of the microwave source and the electric condensing source, in a very wide range of micro power and money concentration, can maintain the matching, and does not need to be adjusted often, so that the test wave chirp density plasma source becomes convenient and economical. Plasma Luo Chenggong: So Γ: The production of this creation can be more progressive, more practical, and more suitable for users
Πΐ確已符合新型專利中請之要件，纽法提出專利申 请，尚請貴審杳卷昌i益7。+ 作，音…-— 審’並盼早曰准予專利以勵創 I*隹以上所述者’僅為本創 以此限定摘作實施之範圍佳貫㈣⑽已，當不能 及創作說明書内容所=:故’凡依本創作申請專利範圍 本創作專利涵蓋之範圍y㈣等效變化與修飾，皆應仍屬 19 M261951 【圖式簡單說明】 第1圖 第2圖 第3圖 $本創作之高密度微波電漿源系統示意圖； 係本創作之TE模式高密度微波電漿源的阻抗匹配 結構示意圖； 係本創作之TE模式阻抗匹配模型和等效電路示意 圖； 係本創作之TE模式實驗微波電㈣示意圖； β係本創作反射功率比隨耦合腔長度之改變情形；Πΐ has indeed complied with the requirements of the new type of patent. New Zealand has filed a patent application, and you are still invited to review it. + Works, sounds ...-— Examined and hoped to grant patents to Lichuang I * 隹 the ones mentioned above 'are only for the purpose of this invention to limit the scope of the implementation of the implementation. It is not possible to match the content of the creative instructions. =: Therefore, where the scope of this application for a patent is based on the scope of this application, equivalent changes and modifications should still belong to 19 M261951 [Schematic description] Figure 1 Figure 2 Figure 3 Schematic diagram of the density microwave plasma source system; is a schematic diagram of the impedance matching structure of the TE mode high-density microwave plasma source created by this work; is a schematic diagram of the TE mode impedance matching model and equivalent circuit created by this work; is a TE mode experimental microwave power created by this work ㈣ Schematic diagram; β is the change of the original reflection power ratio with the coupling cavity length;
圖係本創作反射功率比隨四分之一波長介質窗厚度之 改變情形； 第7 ®係本創作反射功率比隨線型波、右旋或左旋圓偏極 波之變化； /8圖係邊用之基本微波源元件組裝示意圖； f 9圖，係習用之微波電漿源系統示意圖； 第1 0圖，係美國專利第511111彳號之高密度微波電漿源示 意圖；以及The figure shows the change of the reflected power ratio with the thickness of the quarter-wave dielectric window. The 7th series shows the change of the reflected power ratio with the linear wave, right-handed or left-handed circular polarized wave. / 8 Schematic diagram of basic microwave source component assembly; f 9 is a schematic diagram of a conventional microwave plasma source system; FIG. 10 is a schematic diagram of a high-density microwave plasma source of US Patent No. 511111 彳; and
第1 1圖，係美國專利第4727293號之高密度微波電漿源示 意圖。 表一貫驗電漿源的設計參數及操作範圍。 20 M261951 【主要元件符號說明】 (本創作部分） 真空電漿室1 幫浦系統1 1 處理架1 2 探極架1 2 1 電漿量測儀1 3 流量控制器1 4 降壓節流閥1 4 1 可調長度圓導波管2 可調諧振腔2 1 四分之一波長介質窗2 2 氣體流量控制系統2 3 螺線管電磁鐵2 4 多極磁場壞2 4 A 偏振轉換器2 5 黃銅板2 6 〇形環襯墊2 7 方形導波管3 導波管調諧螺桿3 1 反射波量測裝置3 2 微波能源3 3 21 M261951 (習用部分） 方導波管4 微波能源4 1 迴路器4 2 反射波量測裝置4 3 阻抗匹配元件4 4 電磁波4 5 電磁波5 四分之一波長介質窗51 · 低氣壓電漿區5 2 螺線管電磁鐵線圈5 3 偏極化器6 電磁波6 1 右旋圓偏波（RHCP)6 2 四分之一波長厚介質真空窗6 3 電漿區6 4 ^ 磁場值6 5 諧振腔7 石英盤罩7 1 磁環7 2 22 M261951Figure 11 is a schematic diagram of a high-density microwave plasma source of U.S. Patent No. 4,729,293. The table consistently checks the design parameters and operating range of the plasma source. 20 M261951 [Description of main component symbols] (This creative part) Vacuum plasma chamber 1 Pump system 1 1 Processing rack 1 2 Probe rack 1 2 1 Plasma measuring instrument 1 3 Flow controller 1 4 Pressure reducing throttle 1 4 1 Adjustable length circular waveguide 2 Adjustable resonant cavity 2 1 Quarter-wavelength dielectric window 2 2 Gas flow control system 2 3 Solenoid electromagnet 2 4 Multipole magnetic field failure 2 4 A Polarization converter 2 5 Brass plate 2 6 O-ring gasket 2 7 Square wave guide tube 3 Wave guide tuning screw 3 1 Reflected wave measuring device 3 2 Microwave energy source 3 3 21 M261951 (conventional part) Square wave guide tube 4 Microwave energy source 4 1 Looper 4 2 Reflected wave measurement device 4 3 Impedance matching element 4 4 Electromagnetic wave 4 5 Electromagnetic wave 5 Quarter-wavelength dielectric window 51 · Low-pressure plasma zone 5 2 Solenoid solenoid coil 5 3 Polarizer 6 Electromagnetic wave 6 1 Right-handed circular polarized wave (RHCP) 6 2 Quarter-wavelength thick dielectric vacuum window 6 3 Plasma zone 6 4 ^ Magnetic field value 6 5 Resonant cavity 7 Quartz disk cover 7 1 Magnetic ring 7 2 22 M261951
【表一】 微波產生器微波能源 600W/4KV/2.45 GHz E C R磁鐵電磁線圈 水冷式，1 LPM 最大磁通密度 1200高斯/2仟瓦特 操作氣壓 10_4 torr - 10_1 torr Ar氣流量 0〜50 seem 電漿室尺寸 17cm直徑x5cm長 出口直徑 14 cm 微波耦合效率 95% 電漿出口密度 1011/ cm3 發散角 2〜20度 微波能源電源燈絲 8A/4V 陽極 -4KV/150mA 磁鐵電源 20A〜120A/〜25V[Table 1] Microwave generator microwave energy 600W / 4KV / 2.45 GHz ECR magnet electromagnetic coil water-cooled, 1 LPM maximum magnetic flux density 1200 Gauss / 2 仟 W operating pressure 10_4 torr-10_1 torr Ar gas flow 0 ~ 50 seem plasma Room size 17cm diameter x 5cm long outlet diameter 14 cm Microwave coupling efficiency 95% Plasma outlet density 1011 / cm3 Divergence angle 2 ~ 20 degrees Microwave energy source filament 8A / 4V anode-4KV / 150mA Magnet power source 20A ~ 120A / ~ 25V