TWI913911B - 靜態隨機存取記憶體以及其製作方法 - Google Patents
靜態隨機存取記憶體以及其製作方法Info
- Publication number
- TWI913911B TWI913911B TW113136003A TW113136003A TWI913911B TW I913911 B TWI913911 B TW I913911B TW 113136003 A TW113136003 A TW 113136003A TW 113136003 A TW113136003 A TW 113136003A TW I913911 B TWI913911 B TW I913911B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- random access
- access memory
- static random
- static
- Prior art date
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Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI913911B true TWI913911B (zh) | 2026-02-01 |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110198699A1 (en) | 2010-02-17 | 2011-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated semiconductor structure for sram and fabrication methods thereof |
| TW201338163A (zh) | 2012-03-08 | 2013-09-16 | United Microelectronics Corp | 鰭狀場效電晶體及其製程 |
| TW201839916A (zh) | 2017-04-20 | 2018-11-01 | 台灣積體電路製造股份有限公司 | 積體電路晶片、半導體裝置及其形成方法 |
| TW201947767A (zh) | 2018-05-16 | 2019-12-16 | 台灣積體電路製造股份有限公司 | 積體電路裝置 |
| US20210313333A1 (en) | 2020-04-01 | 2021-10-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory chip structure having gaa transistors with different threshold voltages and work functions for improving performances in multiple applications |
| TW202211390A (zh) | 2020-09-09 | 2022-03-16 | 南韓商三星電子股份有限公司 | 半導體記憶體元件 |
| US20220383943A1 (en) | 2020-06-18 | 2022-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sram structures |
| TW202418939A (zh) | 2022-10-28 | 2024-05-01 | 聯華電子股份有限公司 | 靜態隨機存取記憶體及其佈局圖案 |
| TW202435699A (zh) | 2023-02-17 | 2024-09-01 | 台灣積體電路製造股份有限公司 | 記憶體元件及其形成方法 |
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110198699A1 (en) | 2010-02-17 | 2011-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated semiconductor structure for sram and fabrication methods thereof |
| TW201338163A (zh) | 2012-03-08 | 2013-09-16 | United Microelectronics Corp | 鰭狀場效電晶體及其製程 |
| TW201839916A (zh) | 2017-04-20 | 2018-11-01 | 台灣積體電路製造股份有限公司 | 積體電路晶片、半導體裝置及其形成方法 |
| TW201947767A (zh) | 2018-05-16 | 2019-12-16 | 台灣積體電路製造股份有限公司 | 積體電路裝置 |
| US20210313333A1 (en) | 2020-04-01 | 2021-10-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory chip structure having gaa transistors with different threshold voltages and work functions for improving performances in multiple applications |
| US20220383943A1 (en) | 2020-06-18 | 2022-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sram structures |
| TW202211390A (zh) | 2020-09-09 | 2022-03-16 | 南韓商三星電子股份有限公司 | 半導體記憶體元件 |
| TW202418939A (zh) | 2022-10-28 | 2024-05-01 | 聯華電子股份有限公司 | 靜態隨機存取記憶體及其佈局圖案 |
| TW202435699A (zh) | 2023-02-17 | 2024-09-01 | 台灣積體電路製造股份有限公司 | 記憶體元件及其形成方法 |
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