TWI913536B - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

The present invention addresses the problem of providing a technique for properly removing stubborn residues or film from the periphery of a substrate using SPM (Surface Mount Technology). The substrate processing method of the present invention includes: a first step, which involves forming a protective film comprising an SOG film on the main surface of the substrate, wherein the protective film is formed such that the periphery of the main surface is not covered by the protective film, and an area on the main surface that is inward from the periphery is covered by the protective film; a second step, which, after the protective film formation step, removes the residues or film on the periphery using a treatment solution comprising a mixture of sulfuric acid and hydrogen peroxide; and a third step, which, after the film removal step, removes the protective film.

Description

Substrate processing method and substrate processing apparatus

This invention relates to a substrate processing method and a substrate processing apparatus.

Semiconductor devices are manufactured by forming various patterns on one of the main surfaces of a substrate. The various patterns are formed in the central area of one of the main surfaces of the substrate, and not in its peripheral area.

Various residues may adhere to the periphery of the substrate during pattern formation, or excess film from previous processes may remain on the periphery. To remove these residues or film residues, sometimes a bevel cleaning process is performed on the periphery of the substrate. For example, the substrate processing apparatus described in Patent 1 can be used as a substrate processing apparatus for performing this bevel cleaning. In Patent 1, the substrate processing apparatus includes a substrate holding section and a nozzle. The substrate holding section holds the substrate in a horizontal position and rotates the substrate about a vertical axis of rotation passing through the center of the substrate. The nozzle sprays a processing liquid toward the periphery of the rotating substrate, supplying the processing liquid to the periphery of the substrate. By applying the treatment fluid to the periphery of the substrate, the periphery of the substrate can be cleaned.

Some residual films remaining on the periphery of a substrate are firmly bonded to the substrate and cannot be easily removed using ordinary cleaning solutions or etching solutions. Examples of such difficult-to-remove residues include corrosion inhibitor residues with a hardened layer, or residues of amorphous carbon, NiPt alloys, etc., formed on the substrate during film deposition processes. One method for removing these difficult-to-remove residues is etching using SPM (sulfuric acid/hydrogen peroxide mixture). [Prior Art Documents] [Patent Documents]

[Patent Document 1] Japanese Patent Application Publication No. 2015-70023

[The problem that the invention aims to solve]

Because sulfuric acid or SPM has a high viscosity, it is difficult to use sulfuric acid or SPM to etch only the periphery of the substrate. In addition, the vapor generated by the mixture of sulfuric acid and hydrogen peroxide flows to areas outside the periphery of the substrate, so there is a risk of contamination of the pattern formed in the center of the substrate.

Therefore, the purpose of this invention is to provide a technique for effectively removing stubborn residues or film from the periphery of a substrate using SPM (Surface Mount Technology). [Technical Means for Solving the Problem]

The first embodiment is a substrate processing method, comprising: a first step of forming a protective film comprising an SOG film on the main surface of a substrate, wherein the protective film is formed such that the periphery of the main surface is not covered by the protective film and an area on the main surface that is inside the periphery is covered by the protective film; a second step of removing residue or film residue on the periphery by means of a treatment solution comprising a mixture of sulfuric acid and hydrogen peroxide after the first step; and a third step of removing the protective film after the second step.

The second type is a substrate processing method as described in the first type, wherein the residue or the residual film includes at least one of an anti-corrosion agent containing a hardened layer, amorphous carbon, and NiPt alloy.

The third type is a substrate processing method like the first or second type, wherein in the third step, the protective film is removed by a solution containing hydrofluoric acid.

The fourth type is a substrate processing method of any one of the first to third types, wherein the first step includes a corner protection step, in which a hydrofluoric acid-containing solution is sprayed from a first nozzle toward the substrate, thereby removing the periphery of the SOG film formed on the entire surface of the substrate and forming the protective film in the inner area of the main surface. In the second step, a processing liquid is sprayed toward the substrate from a second nozzle having a larger nozzle opening than the first nozzle, thereby removing the residue or the residual film.

The fifth type is a substrate processing method similar to the fourth type, wherein in the first step, the first nozzle disposed at a position perpendicular to the main surface of the substrate in the vertical direction sprays the liquid in a spraying direction toward the obliquely outward side to remove the peripheral portion of the SOG film. In the second step, the second nozzle sprays the processing liquid toward the protective film, and the processing liquid adhering to the protective film flows from the protective film toward the peripheral portion of the substrate by rotating the substrate.

The sixth type is a substrate processing method such as the fourth or fifth type, wherein the first step further includes a protective film forming step, which is performed before the protective bevel step, wherein a coating liquid is applied to the main surface of the substrate and the coating liquid is dried to form the protective film.

The seventh embodiment is a substrate processing apparatus comprising: a substrate holding section that holds a substrate in a horizontal position where the peripheral portion of the main surface is not covered by a protective film containing an SOG film, and a portion of the main surface that is inner than the peripheral portion is covered by the protective film, and rotates the substrate; and a nozzle that sprays a processing liquid containing a mixture of sulfuric acid and hydrogen peroxide, thereby removing residues or film residues from the peripheral portion of the main surface of the substrate. [Effects of the Invention]

According to the first and seventh embodiments, an SOG film is used to cover the inner area of the main surface of the substrate, and SPM is used to remove residues or film residues on the periphery of the substrate. Since the SOG film is almost not removed by SPM, the inner area of the substrate can be properly protected, and residues or film residues can be properly removed.

According to the second form, it can remove residues or film that are difficult to remove.

According to the third form, damage to the periphery of the substrate can be suppressed, and the protective film can be removed.

According to the fourth type, due to the lower viscosity of the liquid, the protective periphery can be removed with higher positional accuracy. Furthermore, although the viscosity of SPM is higher, the nozzle of the second nozzle is larger, thus the second nozzle can spray SPM more appropriately.

According to the fifth embodiment, in the protective bevel process, the end face of the protective film can be set as an inclined surface. Therefore, in the subsequent second process, the treatment liquid flows smoothly from the inclined surface of the protective film to the periphery of the substrate. Thus, the treatment liquid can also easily act on the interface between the inclined surface and the periphery of the substrate, thereby enabling more appropriate treatment of the periphery of the substrate.

According to the sixth type, a protective film can be formed by a low-cost wet treatment unit.

The implementation method will now be explained with reference to the accompanying diagrams. Furthermore, the diagrams are schematic representations; for ease of explanation, some components may be omitted or simplified. Also, the size and positional relationships of the components shown in the diagrams do not necessarily need to be accurately recorded and may be modified as appropriate.

Furthermore, in the following description, the same constituent elements are illustrated with the same symbols, and their names and functions are also assumed to be the same. Therefore, detailed descriptions of them are sometimes omitted to avoid repetition.

Furthermore, in the following description, even when ordinal numbers such as "first" or "second" are used, such terms are used for convenience and to facilitate understanding of the implementation method, and are not limited to the order that can be generated by such ordinal numbers.

When expressions indicating relative or absolute positional relationships are used (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.), unless otherwise specified, the expression not only strictly indicates the positional relationship but also indicates the state after relative displacement in terms of angle or distance within tolerance or the range that can obtain an equivalent level of function. When expressions indicating equal states are used (e.g., "same," "equal," "homogeneous," etc.), unless otherwise specified, the expression not only indicates a state of strict quantitative equality but also indicates a state with tolerance or a difference in the ability to obtain an equivalent level of function. When using expressions representing shapes (e.g., "quadrilateral" or "cylindrical"), unless otherwise specified, the expression not only strictly represents the shape geometrically, but also indicates a shape having, for example, concavity, convexity, or oblique angles within a range that can achieve an equivalent degree of effect. When using expressions that "comprise," "have," "possess," "include," or "have" a constituent element, the expression is not an exclusive expression excluding the presence of other constituent elements. When using the expression "at least one of A, B, and C," the expression indicates that it includes only A, only B, only C, any two of A, B, and C, or all of A, B, and C.

<Overview of Substrate Processing Apparatus 100> Figure 1 is a top view schematically showing one example of the configuration of the substrate processing apparatus 100, and Figure 2 is a longitudinal sectional view schematically showing one example of the configuration of the substrate processing apparatus 100. The substrate processing apparatus 100 is a monolithic processing apparatus that processes substrates W one by one. The substrate W is, for example, a semiconductor substrate, and here it has a circular plate shape. While there is no particular limitation on the diameter of the substrate W, it is, for example, about 200 mm to 300 mm.

Figure 3 is a schematic diagram illustrating one example of the structure of substrate W. In the example shown in Figure 3, a cross-sectional view and a top view of substrate W are displayed. Various circuit patterns are formed on one of the main surfaces of substrate W. Hereinafter, one of the main surfaces of substrate W will also be referred to as the component surface Wa. The component surface Wa is circular in top view. No circuit pattern is formed in the peripheral region Wa1 of the component surface Wa. The peripheral region Wa1 is a circular annular region with a specific width from the periphery of substrate W. The specific width is, for example, approximately several mm to tens of mm. A circuit pattern is formed in the circular central region Wa2, which is located further inward than the peripheral region Wa1 in the component surface Wa.

Here, it is assumed that no circuit pattern is formed on the other main surface of the substrate W. Hereinafter, the other main surface will also be referred to as the non-component surface Wb. Furthermore, the portion having the peripheral area of the non-component surface Wb, the end face of the substrate W, and the peripheral area Wa1 of the component surface Wa will also be referred to as the substrate peripheral portion VW1 of the substrate W.

Foreign matter may remain on the surface of the peripheral portion VW1 of the substrate W. This foreign matter may be residue or film of various substances generated during the various processes used to form circuit patterns on the component surface Wa. More specifically, the residue or film may include at least one of an anti-corrosion agent comprising a hardened layer, amorphous carbon, and an alloy (e.g., an alloy of nickel and platinum). This foreign matter can be removed by a mixture of sulfuric acid and aqueous hydrogen peroxide (SPM).

The substrate processing apparatus 100 of this embodiment is capable of removing foreign matter attached to the periphery VW1 of the substrate. Hereinafter, the structure and operation of the substrate processing apparatus 100 will be explained in general terms first, and then described in detail.

In the examples of Figures 1 and 2, the substrate processing apparatus 100 includes a transport unit 110, an apparatus body 120, and a control unit 90.

<Transfer Unit 110> The transfer unit 110 is disposed between the device body 120 and the outside. The transfer unit 110 is an interface for moving substrates W between the device body 120 and the outside. Here, a substrate receiving container (hereinafter referred to as a carrier) C, which houses a plurality of substrates W, is moved from the outside into the transfer unit 110.

The transfer unit 110 includes a plurality of loading ports 111 and a transfer robot 112. Each loading port 111 holds a carrier C brought in from the outside. The transfer robot 112 is a transfer unit that transfers substrates W between the carrier C and the device body 120. The transfer robot 112 sequentially removes unprocessed substrates W from the carrier C and transfers the substrates W to the device body 120. It then sequentially receives processed substrates W from the device body 120 and stores the processed substrates W in the carrier C. The carrier C containing the processed substrates W is then moved out from the loading port 111.

<Device Body 120> The device body 120 is the part that processes the substrate W, and includes a plurality of dry processing units 10, a plurality of wet processing units 20, and a conveying unit 30.

<Transfer Unit 30> Transfer unit 30 transfers substrate W between the transfer robot 112, dry processing unit 10, and wet processing unit 20. In the example of Figure 1, transfer unit 30 includes a shuttle transfer unit 31 and a central robot 32. The shuttle transfer unit 31 transfers substrate W horizontally between a first handover position and a second handover position. The shuttle transfer unit 31 exchanges substrate W with the transfer robot 112 at the first handover position and with the central robot 32 at the second handover position. The central robot 32 is the transfer unit that transfers substrate W between the shuttle transfer unit 31, dry processing unit 10, and wet processing unit 20.

<Summary of Dry Processing Unit 10> The dry processing unit 10 performs dry processing on the substrate W. As shown in Figure 1, each dry processing unit 10 includes a heat treatment unit 10A, a cooling unit 10B, and an indoor conveying unit 10C. The heat treatment unit 10A heats the substrate W. The cooling unit 10B cools the substrate W. The indoor conveying unit 10C transports the substrate W between the heat treatment unit 10A and the cooling unit 10B.

<Summary of Wet Processing Unit 20> The wet processing unit 20 supplies various processing solutions to the substrate W, performing wet processing on the substrate W corresponding to each processing solution. The plurality of wet processing units 20 includes a coating unit 20A, a beveling unit 20B, and a cleaning unit 20C.

The coating unit 20A performs a coating process to form a coating film F2 on the entire surface of the component surface Wa of the substrate W (see also Figure 6(a)). Specifically, the coating unit 20A applies a coating liquid to the entire surface of the component surface Wa of the substrate W and dries the coating liquid to a certain extent to form the coating film F2.

In the example of Figure 6(a), the coating unit 20A includes a substrate holding part 21A and a coating nozzle 22A. The substrate holding part 21A holds the substrate W in a horizontal position with the component surface Wa facing vertically upward, and rotates the substrate W about the rotation axis Q1. The horizontal position mentioned here refers to the position where the thickness direction of the substrate W is along the vertical direction. The rotation axis Q1 is an axis passing through the center of the substrate W and along the vertical direction. Furthermore, the substrate holding part 21A can also be referred to as a rotary chuck.

The coating nozzle 22A is positioned vertically above the substrate W held by the substrate holding portion 21A. The coating nozzle 22A sprays a specific amount of coating liquid containing the coating film F2 towards the center of the component surface Wa of the substrate W. The coating liquid is, for example, SOG (Spin on Glass). The substrate holding portion 21A rotates the substrate W around the rotation axis Q1. This allows the coating liquid to spread across the entire component surface Wa of the substrate W. By rotating the substrate W at high speed using the substrate holding portion 21A, the coating liquid dries to a certain extent, forming the coating film F2 on the entire component surface Wa of the substrate W.

The coated substrate W is transported by a central robot 32 to the dry processing unit 10, where it undergoes heat treatment in the heat treatment unit 10A. This dries the coating F2 on the substrate W, thereby forming a protective film F1 across the entire component surface Wa. The protective film F1 is, for example, an SOG film (described below). The heat treatment unit 10A can also be referred to as a baking unit. The substrate W is then transported by an indoor conveyor unit 10C to a cooling unit 10B, where it is cooled. This allows the temperature of the substrate W to decrease rapidly.

The bevel unit 20B performs a protective bevel treatment on the substrate W to remove the protective film F1 from the periphery (hereinafter referred to as the protective periphery VF1) (see also Figure 6(b)). More specifically, the bevel unit 20B supplies a first treatment solution to the protective periphery VF1. The first treatment solution is a chemical solution capable of removing the protective film F1, hereinafter also referred to as the film removal solution. The film removal solution is, for example, hydrofluoric acid. Through this protective bevel treatment, the protective periphery VF1 can be removed, exposing the peripheral area Wa1 of the underlying layer. That is, through the protective bevel treatment, the central area Wa2 of the component surface Wa of the substrate W is covered by the protective film F1, but the peripheral area Wa1 is exposed.

In the example of Figure 6(b), the angled unit 20B includes a substrate holding part 21B and an angled nozzle 22B (equivalent to the first nozzle). The substrate holding part 21B holds the substrate W in a horizontal position and rotates the substrate W about the rotation axis Q1. The substrate holding part 21B can also be referred to as a rotating chuck.

An angled nozzle 22B is positioned vertically above the substrate W held by the substrate holding portion 21B. As shown in Figure 6(b), the angled nozzle 22B sprays film removal liquid towards the protective periphery VF1 of the rotating substrate W at a position vertically opposite to the periphery of the substrate W. The film removal liquid is applied at the application point P1 on the upper surface of the protective film F1, and flows radially outward due to the centrifugal force of the substrate W, and disperses from the periphery of the substrate W. At this time, the film removal liquid acts on the protective periphery VF1, which has the circle passing through the application point P1 as its inner periphery, and removes the protective periphery VF1. Therefore, the peripheral area Wa1 of the component surface Wa, which is located lower than the protective perimeter VF1, is exposed. That is, the central area Wa2 of the component surface Wa is covered by the protective film F1, but the peripheral area Wa1 of the component surface Wa is exposed.

The angled nozzle 22B has a smaller nozzle outlet 22b opening area. Furthermore, the viscosity of the membrane removal fluid is lower, and the flow rate of the membrane removal fluid is also set lower during the angled protection process. Therefore, the membrane removal fluid ejected from the angled nozzle 22B can adhere to the target adhesion position on the protective membrane F1 with greater precision. That is, the difference between the adhesion position P1 and the target adhesion position can be reduced. Therefore, the angled unit 20B can remove the protective periphery VF1 with greater positional accuracy.

The cleaning unit 20C processes the substrate W after the protective bevel treatment, specifically the substrate bevel portion VW1 (see also Figure 6(c)). Specifically, the cleaning unit 20C supplies a second treatment solution to the substrate periphery VW1 of the substrate W. This second treatment solution is a solution that can hardly remove the protective film F1 but can treat the substrate periphery VW1. Here, the second treatment solution removes foreign matter M1 from the substrate periphery VW1. Therefore, the second treatment solution will also be referred to as a foreign matter removal solution below. For example, the foreign matter removal solution is a mixture of sulfuric acid and hydrogen peroxide (SPM). This substrate bevel treatment essentially cleans the substrate periphery VW1; therefore, it can also be referred to as a cleaning process.

The cleaning unit 20C also performs a protective film removal process on the substrate W after the substrate has been beveled (see also Figure 6(d)). Specifically, the cleaning unit 20C supplies a film removal solution to the protective film F1 on the substrate W. In this way, the protective film F1 can be removed.

In the examples of Figures 6(c) and 6(d), the cleaning unit 20C includes a substrate holding part 21C and a cleaning nozzle 22C (equivalent to a second nozzle). The substrate holding part 21C holds the substrate W in a horizontal position and rotates the substrate W about the rotation axis Q1. The substrate holding part 21C can also be referred to as a rotating chuck.

The cleaning nozzle 22C is positioned vertically above the substrate W held by the substrate holding portion 21C. The cleaning nozzle 22C has a larger nozzle 22c than the nozzle 22b of the angled nozzle 22B, enabling it to selectively spray various treatment liquids, including foreign matter removal liquid and film removal liquid. For example, the cleaning nozzle 22C sprays foreign matter removal liquid towards the protective film F1 of the rotating substrate W from a position vertically opposite to the center of the substrate W. The foreign matter removal liquid adhering to the upper surface of the protective film F1 of the substrate W is caused by centrifugal force generated by the rotation of the substrate W, flowing radially outward along the upper surface of the protective film F1, and then flowing along the substrate periphery VW1 of the substrate W. This allows for the removal of foreign matter M1 from the periphery of the substrate VW1.

Furthermore, the cleaning nozzle 22C sprays film removal liquid onto the protective film F1 of the rotating substrate W after the substrate has been angled. The film removal liquid adhering to the upper surface of the protective film F1 on the substrate W is subjected to centrifugal force generated by the rotation of the substrate W and flows radially outward along the upper surface of the protective film F1. In this way, the protective film F1 can be removed.

<Control Unit 90> The control unit 90 comprehensively controls the board processing apparatus 100. Specifically, the control unit 90 controls the transfer robot 112, the dry processing unit 10, the wet processing unit 20, and the conveying unit 30.

Figure 4 is a functional block diagram schematically showing an example of the internal structure of the control unit 90. The control unit 90 is an electronic circuit, for example, having a data processing unit 91 and a memory unit 92. In the specific example of Figure 3, the data processing unit 91 and the memory unit 92 are interconnected via a bus 93. The data processing unit 91 may also be a computing processing device such as a CPU (Central Processing Unit). The memory unit 92 may also have a non-temporary memory unit (e.g., ROM (Read Only Memory) or hard disk) 921 and a temporary memory unit (e.g., RAM (Random Access Memory)) 922. The non-temporary memory 921 may also store, for example, a program specifying the processing to be executed by the control unit 90. By executing this program through the data processing unit 91, the control unit 90 can perform the processing specified in the program. Of course, some or all of the processing executed by the control unit 90 may also be executed by dedicated logic circuits or other hardware.

<Summary of the Operation of the Substrate Processing Apparatus 100> Figure 5 is a flowchart illustrating an example of a substrate processing method performed by the substrate processing apparatus 100. Figure 6 is a diagram schematically illustrating an example of the substrate W in each process step. The following is a summary of the operation of the substrate processing apparatus 100, followed by a description of the specific structure and operation of each processing unit.

First, the substrate processing apparatus 100 performs a protective film formation process (step S1: protective film formation process) to form a protective film F1 on the entire surface of the component surface Wa of the substrate W. Figure 6(a) shows the substrate W during the formation of the protective film F1. The protective film F1 is a film used to protect the component surface Wa of the substrate W, especially the central area Wa2, from the influence of the foreign matter removal liquid. The protective film F1 is, for example, an SOG (Spin on Glass) film. The SOG film is a glassy film containing silicate, for example, containing silicate and organic groups. The SOG film may also be, for example, silica glass, alkyl silicate polymer, alkyl silsesquioxane polymer, hydrogenated silsesquioxane polymer, or hydrogenated alkyl silsesquioxane polymer.

The substrate processing apparatus 100 pairs of substrates W are sequentially subjected to coating processing performed by the coating unit 20A and heat treatment performed by the dry processing unit 10 to form a protective film. Specifically, firstly, the coating nozzle 22A sprays a coating liquid (e.g., SOG) containing the material of the coating film F2 toward the upper surface of the component surface Wa of the substrate W in a specific amount, and the substrate holding unit 21A rotates the substrate W about the rotation axis Q1. Thereby, the coating liquid spreads to the entire surface of the component surface Wa of the substrate W. Then, the substrate holding unit 21A rotates the substrate W at a higher speed, and the coating liquid dries to a certain extent, forming the coating film F2 on the entire surface of the component surface Wa of the substrate W.

The central robot 32 removes the coated substrate W from the coating unit 20A and moves it into the heat treatment unit 10A of the dry processing unit 10. The heat treatment unit 10A heats the substrate W to dry the coating F2 on the component surface Wa, thereby forming a protective film F1. The heated substrate W is then transported from the indoor transfer unit 10C to the cooling unit 10B for cooling. The cooled substrate W is then handed over to the central robot 32 via the heat treatment unit 10A. The central robot 32 then transports the substrate W with the protective film F1 formed to the angled unit 20B.

The angled unit 20B performs a protective angled treatment on the substrate W (step S2: protective angled process). Figure 6(b) shows the substrate W when the protective periphery VF1 is removed. The angled nozzle 22B sprays film removal liquid towards the protective periphery VF1 of the rotating substrate W. The film removal liquid adheres to the liquid application position P1 on the upper surface of the protective film F1, flows radially outward along the upper surface of the protective film F1, and disperses from the periphery of the substrate W. At this time, the film removal liquid acts on the protective periphery VF1, removing the protective periphery VF1.

The angled nozzle 22B has a smaller nozzle outlet 22b opening area. Furthermore, the viscosity of the membrane removal fluid is lower, and the flow rate of the membrane removal fluid is also set lower during the angled protection process. Therefore, the membrane removal fluid sprayed from the angled nozzle 22B can be applied to the target application position on the protective membrane F1 with greater precision.

Here, the case where the liquid application position P1 deviates significantly from the target liquid application position will be explained. If the liquid application position P1 deviates from the target liquid application position toward the rotation axis Q1 (i.e., radially inward), the protective film F1 is removed further inward. Therefore, the outer peripheral area of the central region Wa2 of the substrate W will be exposed. Thus, the protective film F1 cannot protect the outer peripheral area of the central region Wa2. Furthermore, if the liquid application position P1 deviates radially outward from the target liquid application position, the width of the removed protective film F1 becomes narrower, resulting in the inner peripheral area of the peripheral region Wa1 of the component surface Wa not being exposed. Therefore, the foreign object M1, which is the object to be removed from the inner peripheral area of the peripheral region Wa1 of the substrate W, is covered by the protective film F1.

In contrast, this embodiment allows for higher positioning accuracy in applying the membrane removal liquid to the application position P1. Therefore, the central region Wa2 of the element surface Wa can be properly protected by the protective membrane F1, while the peripheral region Wa1 is properly exposed. In other words, foreign matter M1 adhering to the peripheral region Wa1 can be properly exposed. The required positioning accuracy for the application position P1 of the membrane removal liquid is, for example, around several hundred μm or less. Therefore, it is ideal to have a smaller opening area of the nozzle 22b of the angled nozzle 22B, so that the membrane removal liquid with lower viscosity can be accurately applied to the target application position.

Since an SOG membrane is used as the protective membrane F1, an acidic solution containing fluorine (F) is preferable as the membrane removal solution. For example, a solution containing hydrofluoric acid (HF) can be used as the membrane removal solution; more specifically, hydrofluoric acid itself can be used. Because hydrofluoric acid has a lower viscosity, it is suitable for spraying from the angled nozzle 22B.

If the hydrofluoric acid acts on the SOG membrane, the SOG membrane is removed by the following chemical reaction.

・・・Si－O－Si・・・＋H ⁺ →・・・Si－OH・・・(1) ・・・Si－OH＋HF→・・・SiF ₄ ＋2HF→H ₂ SiF ₆ (aq)(2) That is, the siloxane (Si ₂ O) contained in the SOG membrane reacts with the hydrogen (H) ions contained in the hydrofluoric acid to become silanol (SiOH), which reacts with hydrofluoric acid (HF) to become liquid hexafluorosilicic acid (H ₂ SiF ₆ ). Through this chemical change, the SOG membrane is removed using hydrofluoric acid.

After removing the protective perimeter VF1, the angled unit 20B sequentially performs a rinsing process in which the film removal liquid on the substrate W flows away from the substrate W using a rinsing solution, and a drying process in which the substrate W is dried. These processes will be described in detail below.

Then, the central robot 32 removes the processed substrate W from the angled unit 20B and moves the substrate W into the cleaning unit 20C.

The cleaning unit 20C performs substrate beveling on the substrate W (step S3: substrate beveling process). Figure 6(c) shows the substrate W when removing foreign matter M1 from the peripheral portion VW1 of the substrate. The substrate holding unit 21C holds the substrate W, whose peripheral portion of the main surface is not covered by the protective film F1 and whose inner area of the main surface is covered by the protective film F1, in a horizontal position and rotates the substrate W. The cleaning nozzle 22C sprays foreign matter removal liquid (SPM) toward the substrate W, using the foreign matter removal liquid to remove residue or film from the peripheral portion VW1 of the substrate. Specifically, the cleaning nozzle 22C sprays a foreign matter removal solution onto the upper surface of the protective film F1 of the rotating substrate W. The rotation of the substrate W causes the foreign matter removal solution adhering to the protective film F1 to flow from the protective film F1 towards the periphery VW1 of the substrate. In this way, while maintaining the protective film F1, the foreign matter M1 adhering to the periphery VW1 of the substrate is removed. The foreign matter removal solution is, for example, a fluorine-free acidic solution. Alternatively, a fluorine-free solution containing sulfuric acid can be used; more specifically, a high-temperature SPM (a mixture of sulfuric acid and hydrogen peroxide) can be used. The temperature of the SPM is, for example, several hundred degrees Celsius.

When the foreign matter removal solution is a fluorine-free acidic solution, although the chemical reaction shown in formula (1) occurs for the SOG membrane, the chemical reaction shown in formula (2) does not occur. Therefore, the SOG membrane is not removed. That is, the protective membrane F1 is not removed. On the other hand, foreign matter M1 can be removed using an acidic solution. Specifically, foreign matter M1 such as corrosion inhibitor residue, amorphous carbon, and alloys (nickel and platinum alloys) can be removed by high-temperature SPM.

Furthermore, here, the opening area of the nozzle 22c of the cleaning nozzle 22C is larger than the opening area of the nozzle 22b of the angled nozzle 22B. Therefore, even a solution containing sulfuric acid (SPM) with higher viscosity can be easily sprayed from the nozzle 22c of the cleaning nozzle 22C. Moreover, in the above example, the cleaning nozzle 22C sprays the film removal solution towards the liquid-coated area (specifically, the central portion) of the substrate W, which is radially inward from the periphery VW1 of the substrate. Therefore, compared to the name of the angled nozzle 22B, the cleaning nozzle 22C can also be called a central nozzle.

After removing foreign matter M1, the cleaning unit 20C performs a rinsing process by using a rinsing solution to remove the foreign matter removal solution from the substrate W. The rinsing process will be described in detail below.

Next, the cleaning unit 20C performs a protective film removal process on the substrate W (step S4: protective film removal process). Figure 6(d) shows the substrate W during the removal of the protective film F1. The cleaning nozzle 22C sprays a film removal liquid (e.g., hydrofluoric acid) toward the center of the rotating substrate W. The film removal liquid adheres to the center of the upper surface of the protective film F1 and expands radially outward due to the centrifugal force generated by the rotation of the substrate W. In this way, the film removal liquid acts on the entire surface of the protective film F1 on the substrate W, removing the protective film F1.

After removing the protective film F1, the cleaning unit 20C sequentially performs a rinsing process to remove the film removal solution from the substrate W using a rinsing solution, and a drying process to dry the substrate W. These processes will be described in detail below.

As described above, according to this substrate processing method, in the protective bevel processing (step S2), a low-viscosity film removal liquid (e.g., hydrofluoric acid) is sprayed from the narrow nozzle 22b of the bevel nozzle 22B to remove the protective periphery VF1 of the protective film F1 with higher positional accuracy. Therefore, the substrate periphery VW1 can be exposed with higher positional accuracy. Conversely, the protective film F1 can protect the central region Wa2 of the substrate W with higher positional accuracy.

Then, in the subsequent substrate beveling process (step S3), the central area Wa2 of the substrate W is protected by the protective film F1, and foreign matter removal liquid (SPM) is supplied to the exposed peripheral portion VW1 of the substrate through the spray outlet 22c of the cleaning nozzle 22C (step S4). During the substrate beveling process, the protective film F1 protects the central area Wa2 with high positional accuracy. Therefore, even if the application position of the foreign matter removal liquid is slightly deviated, the foreign matter removal liquid cannot act on the central area Wa2. Furthermore, even if the application position of the foreign matter removal liquid is slightly deviated, as long as the foreign matter removal liquid flows from the upper surface of the protective film F1 to the peripheral portion VW1 of the substrate, it can properly remove the foreign matter M1 from the peripheral portion VW1 of the substrate.

Therefore, even when the viscosity of the foreign matter removal liquid is high, foreign matter M1 on the periphery VW1 of the substrate can be removed with higher positional accuracy. Furthermore, since the opening area of the nozzle 22c of the cleaning nozzle 22C is larger than the opening area of the nozzle 22b of the angled nozzle 22B, a foreign matter removal liquid with higher viscosity can be sprayed at a lower pressure, making it easier to supply the foreign matter removal liquid to the substrate W.

As described above, in this embodiment, during the substrate bevel treatment (step S3), a protective film F1 (SOG film) can be used to cover the inner area of the component surface Wa of the substrate W, and SPM can be used to remove foreign matter M1 that is difficult to remove from the periphery VW1 of the substrate. Examples of foreign matter M1 include corrosion inhibitor residues containing a hardened layer, amorphous carbon, or NiPt alloy. Since the SOG film is almost not removed by SPM, the inner area of the component surface Wa can be appropriately protected from the effects of SPM, and the foreign matter M1 can be appropriately removed.

Furthermore, in the above example, in the protective film removal process (step S4), the protective film F1, which serves as the SOG film, is removed using a solution containing hydrofluoric acid. Since hydrofluoric acid does not cause much damage to the substrate W, it is suitable for removing the protective film F1. In other words, it can suppress damage to the periphery VW1 of the substrate and properly remove the protective film F1.

Furthermore, in the specific example described above, the protective film F1 is formed by wet processing in the protective film formation process (step S1). Therefore, the protective film F1 can be formed using the low-cost coating unit 20A and heat treatment unit 10A.

Furthermore, in the example above, the protective film F1 is removed by wet treatment during the protective film removal process (step S4). Therefore, the protective film F1 can be removed using the inexpensive cleaning unit 20C.

<Ejection Direction of Angled Nozzle 22B> In the example of Figure 6(b), the angled nozzle 22B ejects the film removal liquid in an outward ejection direction. The ejection direction is determined, for example, by the shape of the internal flow path FP of the angled nozzle 22B. In the example of Figure 6(b), the internal flow path FP of the angled nozzle 22B has a lead direct flow path FP1 and an inclined flow path FP2. The lead direct flow path FP1 is the upstream flow path of the inclined flow path FP2, extending in the vertical direction. The upstream end of the inclined flow path FP2 is connected to the downstream end of the lead direct flow path FP1, and is inclined in a manner that moves away from the axis of rotation Q1 towards a vertical downward direction. That is, the inclined flow path FP2 extends along the inclined outer side. The spray outlet 22b is the downstream end of the inclined flow path FP2. Therefore, the membrane removal solution flowing through the internal flow path FP of the angled nozzle 22B flows out from the spray outlet 22b along the inclined outer side.

Since the membrane removal solution is sprayed outwards at an angle, the liquid-attaching position P1 on the protective membrane F1 in the angled protection treatment (step S2) becomes radially outwards as the protective periphery VF1 of the protective membrane F1 is removed. That is, as the protective periphery VF1 becomes thinner, the membrane removal solution adheres to the protective periphery VF1 at a more radially outward-facing liquid-attaching position P1. Therefore, the end face FS1 of the protective membrane F1 is inclined radially outwards from its upper surface toward its lower surface.

In this case, during the subsequent substrate beveling process (step S3), the cleaning unit 20C should spray the foreign matter removal liquid from the cleaning nozzle 22C by applying the foreign matter removal liquid to the upper surface of the protective film F1 (see Figure 6(c)). Accordingly, the foreign matter removal liquid flows from the upper surface of the protective film F1 through the end face FS1 (incline) into the peripheral region Wa1 of the component surface Wa of the substrate W. Therefore, the foreign matter removal liquid can flow smoothly from the end face FS1 into the peripheral region Wa1, and can also act appropriately at the interface between the end face FS1 and the peripheral region Wa1. Therefore, the foreign matter removal liquid can also appropriately remove foreign matter M1 at this interface.

<Back Side Bevel> Furthermore, during the protective film formation process (step S1), a substance with the same composition as the protective film F1 may also adhere to the peripheral area of the non-component surface Wb of the substrate W. For example, if the coating liquid flows from the component surface Wa of the substrate W through the end face to the non-component surface Wb, and a portion of it dries, then a substance with the same composition as the protective film F1 will adhere to the non-component surface Wb.

Therefore, as shown in Figure 6(b), the angled unit 20B may also include an angled nozzle 26B for the back side. The angled nozzle 26B is disposed further vertically below the substrate W held by the substrate holding portion 21B, and faces the non-component surface Wb of the substrate W in the vertical direction. The angled nozzle 26B sprays film removal liquid toward the peripheral area of the non-component surface Wb of the substrate W.

In this case, during the protective angle treatment (step S2), film removal liquid is sprayed from both angled nozzles 22B and 26B toward the rotating substrate W. The film removal liquid sprayed from angled nozzle 22B adheres to the upper surface of the protective film F1 on the substrate W. The film removal liquid is radially outward due to the centrifugal force generated by the rotation of the substrate W and disperses outward from the end face of the substrate W. The film removal liquid from the angled nozzle 22B can remove the protective periphery VF1 of the protective film F1.

On the other hand, the treatment liquid sprayed from the angled nozzle 26B adheres to the non-component surface Wb of the substrate W. The film removal liquid is subjected to centrifugal force generated by the rotation of the substrate W and flows radially outward along the non-component surface Wb, and disperses outward from the end face of the substrate W. The film removal liquid from the angled nozzle 26B can remove the same substance as the protective film F1 adhering to the non-component surface Wb.

<Specific Examples of the Board Processing Apparatus 100> Hereinafter, a detailed description will be given of an example of the specific structure and operation of each processing unit of the board processing apparatus 100.

<Painting Unit 20A> Figure 7 is a schematic diagram illustrating one example of the structure of the painting unit 20A. The painting unit 20A includes a substrate holding portion 21A, a painting nozzle 22A, and a protective cover 23A.

The substrate holding part 21A holds the substrate W in a horizontal position and rotates the substrate W around the rotation axis Q1. In the example of FIG7, the substrate holding part 21A includes a circular plate-shaped stage 211A and a rotation mechanism 212A.

Stage 211A is positioned with its thickness direction aligned vertically. A substrate W is placed on the upper surface of stage 211A. The diameter of stage 211A is smaller than the diameter of substrate W; therefore, stage 211A only faces the central portion of substrate W vertically. A plurality of suction ports (not shown) are formed on the upper surface of stage 211A. A suction flow path (not shown) communicating with the suction ports is formed inside stage 211A, with its upstream end connected to a suction mechanism (not shown). The suction mechanism, for example, includes a pump, to suction gas within the suction flow path. This draws the non-component surface Wb of substrate W to the plurality of suction ports of stage 211A, whereby substrate W is held by the adsorption of stage 211A.

Rotation mechanism 212A causes stage 211A to rotate about axis Q1. In the example of Figure 7, rotation mechanism 212A includes shaft 213A and motor 214A. The upper end of shaft 213A is connected to the lower surface of stage 211A and extends along axis Q1. Shaft 213A is, for example, a hollow shaft, and a portion of a suction flow path is provided inside shaft 213A. Motor 214A causes shaft 213A to rotate about axis Q1. Thereby, stage 211A connected to shaft 213A and substrate W held by stage 211A rotate integrally about axis Q1.

<Painting Nozzle 22A> The painting nozzle 22A is positioned vertically above the substrate W held by the substrate holding portion 21A. The painting nozzle 22A is connected to the downstream end of the supply pipe 221A, and the upstream end of the supply pipe 221A is connected to the coating liquid supply source 223A. Therefore, coating liquid from the coating liquid supply source 223A is supplied to the painting nozzle 22A through the supply pipe 221A and sprayed out from the spray outlet 22a of the painting nozzle 22A. A valve 222A is provided in the supply pipe 221A. The opening and closing of valve 222A switches the spraying and stopping of the coating liquid from nozzle 22A.

In the example of Figure 7, the coating nozzle 22A is configured to move between a coating position and a coating standby position via the nozzle moving mechanism 25A. The coating position is the position where the coating nozzle 22A sprays coating liquid toward the substrate W, for example, a position perpendicular to the center of the substrate W in the vertical direction. In the example of Figure 7, the coating nozzle 22A is shown stopped in the coating position. The coating standby position is the position where the coating nozzle 22A is not spraying coating liquid toward the substrate W, for example, a position radially outward from the end face of the substrate W. When the coating nozzle 22A is stopped in the coating standby position, physical collisions between the coating nozzle 22A and the central robot arm 32 can be avoided when the substrate W is being moved in or out. The nozzle moving mechanism 25A has, for example, the same arm rotation mechanism as the nozzle moving mechanism 222B described below included in the angled unit 20B.

The protective cover 23A is a component that catches the coating liquid that splashes from the end face of the substrate W held by the substrate holding portion 21A. The protective cover 23A has a shape that surrounds the substrate holding portion 21A. In the example of FIG7, the protective cover 23A has an annular shape with a radially inward opening, and the coating liquid splashed from the end face of the substrate W flows into the inner space of the protective cover 23A. A liquid recovery mechanism and an venting mechanism (not shown) are provided at the lower part of the protective cover 23A. The liquid recovery mechanism recovers the coating liquid inside the protective cover 23A.

The protective cover 23A is configured to move up and down between a protective cover processing position and a protective cover standby position via a protective cover lifting mechanism 26A. In the protective cover processing position, the upper periphery of the protective cover 23A is positioned vertically above the upper surface of the substrate W held by the substrate holding part 21A. In this position, the protective cover 23A can catch any coating liquid splashed from the substrate W. In the protective cover standby position, the upper periphery of the protective cover 23A is positioned vertically below the stage 211A. When the protective cover 23A is in the protective cover standby position, physical collisions between the protective cover 23A and the central robotic arm 32 can be avoided when loading or unloading the substrate W. The protective cover lifting mechanism 26A may include, for example, a motor as a drive source and a ball screw mechanism as a drive mechanism for converting the rotation of the motor into linear movement. Alternatively, the protective cover lifting mechanism 26A may also include a cylinder.

<Heat Treatment Unit 10A> Referring to Figure 1, the heat treatment unit 10A includes a heating plate 11A as an example of a heating section, and three or more lifting pins 12A. The heating plate 11A includes a plate-shaped plate of metal or the like, and heating elements such as heating wires embedded in the plate-shaped plate. The lifting pins 12A pass through the heating plate 11A in a vertical direction and are configured to move up and down between a raised upper position and a raised lower position. The raised upper position is where the front end of the lifting pin 12A is located vertically above the upper surface of the heating plate 11A (i.e., the upper surface of the plate-shaped plate). The raised lower position is where the front end of the lifting pin 12A is located vertically below the upper surface of the heating plate 11A. The pin lifting mechanism (not shown) that raises and lowers the jacking pin 12A may include, for example, a motor and ball screw mechanism, or alternatively, a cylinder.

With the plurality of lifting pins 12A in the upper lifting position, the central robot arm 32 places the substrate W onto the front end of the lifting pins 12A. Here, the substrate W is placed on the front end of the plurality of lifting pins 12A with the component surface Wa facing vertically upward. The plurality of lifting pins 12A descend to the lower lifting position, placing the substrate W onto the heating plate 11A. The heating plate 11A heats the substrate W. This dries the coating F2 on the component surface Wa of the substrate W, forming a protective film F1 on the component surface Wa.

<Cooling Unit 10B> Cooling unit 10B includes a cooling plate 11B as one example of a cooling section, and three or more lifting pins 12B. The cooling plate 11B includes a plate-shaped plate of metal or the like, and a cooling source such as a Peltier element embedded in the plate-shaped plate. The lifting pins 12B pass vertically through the cooling plate 11B and are configured to move up and down between a raised upper position and a raised lower position. The raised upper position is where the front end of the lifting pin 12B is positioned vertically above the upper surface of the cooling plate 11B. The raised lower position is where the front end of the lifting pin 12B is positioned vertically below the upper surface of the cooling plate 11B. The pin lifting mechanism that raises and lowers the lifting pin 12B is the same as the pin lifting mechanism that raises and lowers the lifting pin 12A.

With the multiple lifting pins 12B in the upper lifting position, the central robot arm 32 places the substrate W onto the front end of the lifting pins 12B. The substrate W is then placed on the cooling plate 11B by the multiple lifting pins 12B descending to the lower lifting position. The cooling plate 11B cools the substrate W. This allows the temperature of the substrate W to decrease rapidly.

<Protective Film Formation Process> Next, a specific example of a protective film formation process performed using the coating unit 20A and the dry processing unit 10 will be described. Figure 8 is a flowchart showing a specific example of the protective film formation process. First, the central robot 32 moves the substrate W into the coating unit 20A (step S11). The substrate holding part 21A holds the moved-in substrate W.

Next, the coating unit 20A supplies coating liquid to the component surface Wa of the substrate W to form a coating film F2 (step S12). Specifically, firstly, the nozzle moving mechanism 25A moves the coating nozzle 22A to the coating position, and the shield lifting mechanism 26A raises the shield 23A to the shield processing position. Then, the coating unit 20A (specifically, the control unit 90) opens the valve 222A, spraying a specific amount of coating liquid from the coating nozzle 22A onto the component surface Wa of the substrate W. The coating liquid is, for example, SOG. Furthermore, when supplying the coating liquid, the substrate holding unit 21A can rotate the substrate W, or it can keep the substrate W stationary. Subsequently, the substrate holding part 21A rotates the substrate W so that the coating liquid is spread to the entire surface of the component surface Wa of the substrate W.

Next, the substrate holding part 21A continues to rotate the substrate W, causing the coating liquid on the substrate W to dry and form a coating film F2 (step S13). After the coating film F2 is formed, the substrate holding part 21A stops the rotation of the substrate W and releases the substrate W from the holding position. Furthermore, the nozzle moving mechanism 25 moves the coating nozzle 22A to the coating standby position, and the shield lifting mechanism 26A lowers the shield 23A to the shield standby position.

Next, the central robot 32 removes the substrate W from the coating unit 20A and moves it into the dry processing unit 10 (step S14). Specifically, the lifting pin 12A of the heat treatment unit 10A receives the substrate W from the central robot 32 while it is in the upper lifting position, and then lowers it to the lower lifting position. In this way, the substrate W is placed on the heating plate 11A.

Next, the heating plate 11A heats the substrate W (step S15). This heats the coating F2 on the substrate W to form a protective film F1. The protective film F1 is, for example, an SOG film.

Next, the indoor transport unit 10C transports the substrate W from the self-heating treatment unit 10A to the cooling unit 10B. Specifically, firstly, the lifting pin 12A rises to raise the substrate W, and then the indoor transport unit 10C removes the substrate W. The indoor transport unit 10C places the substrate W on the front end of the lifting pin 12B of the cooling unit 10B, which is located in the upper lifting position. The lifting pin 12B, with the substrate W placed on it, descends to the lower lifting position, placing the substrate W on the cooling plate 11B.

Next, cooling unit 10B cools the substrate W (step S16). This allows the temperature of the substrate W to drop rapidly. Then, indoor transport unit 10C transports the substrate W from cooling unit 10B to heat treatment unit 10A, and central robot 32 removes the substrate W from dry treatment unit 10 (step S17). Central robot 32 then moves the substrate W into angled unit 20B.

<Angled Unit 20B> Figure 9 is a schematic diagram illustrating one example of the structure of the angled unit 20B, and Figure 10 is a schematic top view illustrating one example of the structure of the angled unit 20B. In the examples of Figures 9 and 10, the angled unit 20B includes a substrate holding portion 21B, an angled nozzle 22B, and a protective cover 23B.

<Substrate Holding Part 21B> Substrate holding part 21B holds substrate W in a horizontal position and rotates substrate W about rotation axis Q1. One example of the specific configuration of substrate holding part 21B is the same as that of substrate holding part 21A; therefore, repeated description is avoided.

<Angled Nozzle 22B> In the examples of Figures 9 and 10, a plurality of angled nozzles 22B are provided. In the illustrated example, the plurality of angled nozzles 22B are integrally held by a holding member 221B. The plurality of angled nozzles 22B are arranged horizontally and held by the holding member 221B in a state that passes through the holding member 221B in the vertical direction.

In the illustrated example, a plurality of angled nozzles 22B are configured to move between an angled processing position and an angled standby position via a nozzle moving mechanism 222B. The angled processing position is the position where the angled nozzles 22B spray fluid toward the substrate W, and is perpendicular to the substrate W in the vertical direction. The angled standby position is the position where the angled nozzles 22B do not spray fluid toward the substrate W, for example, a position radially outward from the end face of the substrate W. In the example of Figure 10, the angled nozzles 22B in the angled processing position are shown as solid lines, and the angled nozzles 22B in the angled standby position are shown as a two-point chain. When the angled nozzle 22B is stopped in the angled standby position, physical collisions between the angled nozzle 22B and the central robot arm 32 can be avoided when the substrate W is being moved in or out.

In the illustrated example, the nozzle moving mechanism 222B moves a plurality of angled nozzles 22B integrally by moving the holding member 221B. In the illustrated example, the nozzle moving mechanism 222B has an arm rotation mechanism, specifically including an arm 223B, a support column 224B, and a drive unit 225B. The arm 223B has a rod-like shape extending horizontally, its front end connected to the holding member 221B, and its base end connected to the support column 224B. The support column 224B has a rod-like shape extending vertically and is configured to rotate about its own central axis. The drive unit 225B includes, for example, a motor, to rotate the support column 224B about its central axis. In this way, the arm 223B connected to the support column 224B rotates, and the plurality of angled nozzles 22B connected to the arm 223B move integrally along an arc-shaped movement path. The support column 224B is positioned such that the angled processing position and the standby position are located on the movement path of the angled nozzles 22B.

With the plurality of angled nozzles 22B stopped at the angled processing position, the plurality of angled nozzles 22B are arranged side by side along the circumferential direction of the periphery of the substrate W (see FIG10). In the example of FIG10, four angled nozzles 22Ba to 22Bd are provided as the plurality of angled nozzles 22B. The four angled nozzles 22Ba to 22Bd are arranged sequentially in the rotation direction of the substrate W. That is, the angled nozzle 22Ba is located on the upstream side, and the angled nozzle 22Bd is located on the downstream side. Furthermore, the upstream side mentioned here refers to a position within at least half a circumference. That is, the angled nozzle 22Ba is located upstream of the angled nozzle 22Bd at least within half a circumference, preferably within a quarter circumference. That is, the angle formed by the angled nozzles 22Ba and 22Bd relative to the axis of rotation Q1 is preferably less than 90 degrees.

Here, the angled nozzle 22Ba sprays inert gas, the angled nozzle 22Bb sprays membrane removal solution (specifically, an acidic solution containing fluoride), the angled nozzle 22Bc sprays rinsing solution, and the angled nozzle 22Bd sprays alkaline solution.

An angled nozzle 22Bb is connected to the downstream end of the supply pipe 221Bb, and the upstream end of the supply pipe 221Bb is connected to the membrane removal solution supply source 223Bb. A valve 222Bb is provided in the supply pipe 221Bb, and the spraying and stopping of the membrane removal solution from the angled nozzle 22Bb are switched by opening and closing the valve 222Bb. The membrane removal solution is, for example, hydrofluoric acid. The membrane removal solution can remove the protective membrane F1.

An angled nozzle 22Bc is connected to the downstream end of the supply pipe 221Bc, and the upstream end of the supply pipe 221Bc is connected to the rinsing fluid supply source 223Bc. A valve 222Bc is provided in the supply pipe 221Bc, and the spraying and stopping of the rinsing fluid from the angled nozzle 22Bc are switched by opening and closing the valve 222Bc. As the rinsing fluid, pure water, warm water, ozone water, magnetic water, reducing water (hydrogen water), various organic solvents (e.g., IPA (isopropanol)), functional water (carbon dioxide water, etc.) can be used. The rinsing fluid washes away the chemicals (e.g., membrane removal solution and alkaline solution) on the substrate W and removes them from the substrate W.

An angled nozzle 22Bd is connected to the downstream end of the supply pipe 221Bd, and the upstream end of the supply pipe 221Bd is connected to the alkaline solution supply source 223Bd. A valve 222Bd is provided in the supply pipe 221Bd, and the spraying and stopping of the alkaline solution from the angled nozzle 22Bd are switched by opening and closing the valve 222Bd. Furthermore, in this embodiment, the alkaline solution is not used.

An angled nozzle 22Ba is connected to the downstream end of a supply pipe 221Ba, and the upstream end of the supply pipe 221Ba is connected to a gas supply source 223Ba. A valve 222Ba is provided in the supply pipe 221Ba, and the opening and closing of the valve 222Ba switches the emission and cessation of the inert gas from the angled nozzle 22Ba. The inert gas includes, for example, at least one of rare gases such as argon and nitrogen. As described below, the inert gas from the angled nozzle 22Ba blows the liquid (e.g., film removal liquid) on the periphery of the substrate W radially outward.

<Shield 23B> Shield 23B has a cylindrical shape that surrounds the substrate holding portion 21B, catching the processing liquid that splashes from the end face of the substrate W. In the example of Figure 9, shield 23B includes a bottom component 231B, an inner shield 232B, and an outer shield 233B.

The inner protective cover 232B and the outer protective cover 233B have a cylindrical shape that surrounds the substrate holding portion 21B, and the outer protective cover 233B is disposed further radially outward than the inner protective cover 232B.

The upper portion of the inner protective cover 232B (hereinafter referred to as the upper inclined portion) extends obliquely upward toward the axis of rotation Q1. The lower portion of the inner protective cover 232B includes a cylindrical inner peripheral wall portion extending vertically downward from the inner portion of the lower end of the upper inclined portion, and a cylindrical outer peripheral wall portion extending vertically downward from the outer portion of the lower end of the upper inclined portion.

The upper portion of the outer protective cover 233B (hereinafter referred to as the upper inclined portion) extends obliquely upward toward the axis of rotation Q1, pointing vertically upward. The upper inclined portion of the outer protective cover 233B is vertically higher than the upper inclined portion of the inner protective cover 232B, and faces the upper inclined portion of the inner protective cover 232B vertically. The lower portion of the outer protective cover 233B extends vertically downward from the lower end of the upper inclined portion of the outer protective cover 233B, and is located radially outward than the outer peripheral wall portion of the inner protective cover 232B.

The inner protective cover 232B and the outer protective cover 233B are configured to be raised and lowered between the protective cover processing position and the protective cover standby position by means of the protective cover lifting mechanism 234B. The protective cover lifting mechanism 234B raises and lowers the inner protective cover 232B and the outer protective cover 233B in a manner that prevents them from colliding with each other. An example of the specific configuration of the protective cover lifting mechanism 234B is the same as that of the protective cover lifting mechanism 26A.

The protective cover processing position is where the upper periphery of the inner protective cover 232B and the outer protective cover 233B is located vertically above the upper surface of the substrate W held by the substrate holding portion 21B. In the example shown in Figure 9, the inner protective cover 232B and the outer protective cover 233B are shown in the protective cover processing position. The protective cover standby position is where the upper periphery of the inner protective cover 232B and the outer protective cover 233B is, for example, located vertically below the upper surface of the base 211B of the substrate holding portion 21B. When both the inner protective cover 232B and the outer protective cover 233B are stopped in the protective cover standby position, physical collisions between the inner protective cover 232B and the outer protective cover 233B and the central robotic arm 32 can be avoided when the substrate W is being moved in or out.

With both the inner protective cover 232B and the outer protective cover 233B in the protective cover processing position, the processing liquid that splashes from the periphery of the substrate W is caught by the inner peripheral surface of the inner protective cover 232B. Furthermore, the processing liquid flows down along the inner peripheral surface of the inner protective cover 232B. As described below, this processing liquid is caught by the bottom component 231B. With only the outer protective cover 233B in the protective cover processing position, the processing liquid is caught by the inner peripheral surface of the outer protective cover 233B. Furthermore, the processing liquid drains from the gap between the lower part of the outer peripheral wall of the inner protective cover 232B and the lower part of the outer protective cover 233B.

The bottom component 231B is disposed further vertically below the inner shield 232B and the outer shield 233B. The bottom component 231B is a component that receives the treatment fluid flowing vertically downward along the inner circumferential surface of the inner shield 232B. The bottom component 231B includes an inner circumferential wall portion, an outer circumferential wall portion disposed further outward than the inner circumferential wall portion, and an annular bottom portion connecting the lower ends of the inner circumferential wall portion and the lower ends of the outer circumferential wall portion. In the example of Figure 9, the outer circumferential wall portion of the bottom component 231B is received between the inner circumferential wall portion and the outer circumferential wall portion of the inner shield 232B.

A drainage trough (not shown) is formed at the bottom of the annular ring of the bottom component 231B. The drainage trough is connected to the factory's drainage pipeline. Furthermore, a venting mechanism is connected to the drainage trough, which forcibly vents air from the trough, creating a negative pressure state in the space between the inner wall and the outer peripheral wall of the bottom component 231B.

<Surface Protection Section 24B> The treatment liquid sprayed from the angled nozzle 22B adheres to the target adhesion position P1 on the upper surface of the substrate W. Due to the centrifugal force generated by the rotation of the substrate W, it primarily flows radially outward. However, a portion of the treatment liquid may also diffuse radially inward along the upper surface of the substrate W. During the angled protection treatment (step S2), if a portion of the film removal liquid moves along the upper surface of the protective film F1 towards the center of the substrate W, the protective film F1 on the center side is also removed, and a portion of the central area Wa2 of the component surface Wa of the substrate W is exposed. In this case, the protective film F1 cannot adequately protect the central area Wa2 of the component surface Wa.

Therefore, in the examples of Figures 9 and 10, a surface protection portion 24B is provided in the angled unit 20B to suppress the movement of the processing liquid toward the center of the substrate W. The surface protection portion 24B ejects gas toward the center of the protective film F1 of the substrate W. This gas collides with the center of the substrate W and flows radially outward from the center of the substrate W in all directions. Thus, by the gas flowing radially outward from the center of the substrate W, the gas pushes the processing liquid on the substrate W radially outward. Therefore, the radial inward movement of the processing liquid on the substrate W can be suppressed. For example, an inert gas can be used as the gas. Inert gases include, for example, at least one of rare gases such as argon and nitrogen.

In the example shown in Figure 9, the surface protection portion 24B is disposed vertically above the substrate W held by the substrate holding portion 21B, and includes a head portion 244B having a gas nozzle 241B, a cylindrical component 242B, and a blocking plate 243B, as well as a gas nozzle moving mechanism 27B. The cylindrical component 242B is disposed with its central axis aligned vertically. The blocking plate 243B is mounted on the lower surface of the cylindrical component 242B. The blocking plate 243B has a circular plate shape, and its lower surface is aligned with a horizontal plane. The diameter of the blocking plate 243B is larger than the diameter of the cylindrical component 242B. The gas nozzle 241B extends vertically through the cylindrical component 242B and the baffle plate 243B, with an opening at the lower end of the gas nozzle 241B on the lower surface of the baffle plate 243B. This opening is the outlet of the gas nozzle 241B.

The upper opening of the gas nozzle 241B is connected to the downstream end of the supply pipe 245B, and the upstream end of the supply pipe 245B is connected to the gas supply source 248B. Inert gas from the gas supply source 248B is supplied to the gas nozzle 241B through the supply pipe 245B and ejected from the gas nozzle 241B. A flow regulator 247B and a valve 246B are sequentially arranged on the supply pipe 245B from the side of the gas supply source 248B. The flow regulator 247B adjusts the flow rate of the gas flowing through the supply pipe 245B. The opening and closing of the valve 246B switches the ejection and cessation of the gas from the gas nozzle 241B.

The gas nozzle moving mechanism 27B moves the head 244B between a gas handling position and a gas standby position. The gas handling position is the position when the gas nozzle 241B is expelling gas, for example, a position where the gas nozzle 241B and the center of the substrate W are vertically aligned. The gas standby position is the position when the gas nozzle 241B is not expelling gas, for example, a position radially outward from the end face of the substrate W. When the head 244B is stopped in the gas standby position, physical collisions between the head 244B and the central robotic arm 32 can be avoided when loading or unloading the substrate W. The gas nozzle moving mechanism 27B, for example, has an arm rotation mechanism identical to that of the nozzle moving mechanism 222B.

<Heating Unit 25B> The processing speed of the membrane removal solution may depend on the temperature. For example, for a membrane removal solution that is an acidic solution containing fluorine, it is ideal to raise the temperature of the substrate W to a certain extent in order to increase the processing speed. Therefore, in the example of FIG. 9, a heating unit 25B is provided in the angled unit 20B. The heating unit 25B is positioned opposite the periphery VW1 of the substrate W held by the substrate holding unit 21B, and heats the periphery VW1 of the substrate. This allows for an increase in the processing speed of the membrane removal solution. The heating unit 25B can heat the substrate W by radiant heat, or it can heat the substrate W by supplying a high-temperature fluid (e.g., a high-temperature gas). Here, the heating unit 25B utilizes both radiant heat and a high-temperature gas to heat the substrate W.

Figure 11 is a top view schematically showing an example of the configuration of the heating section 25B. In the example of Figure 11, the heating section 25B includes a heater 251B and a gas supply section 255B that configures the interior of the heater 251B as part of a flow path.

The heater 251B has a ring-shaped plate. Referring also to FIG9, the heater 251B is arranged in a ring around the substrate holding portion 21B such that it does not contact the portion of the lower surface (i.e., the non-component surface Wb) of the substrate W that does not abut against the upper surface of the substrate holding portion 21B. The facing surface (upper surface) of the heater 251B is, for example, parallel to the non-component surface Wb of the substrate W. The facing surface of the heater 251B is separated from the non-component surface Wb of the substrate W by, for example, a distance of about 2 mm to 5 mm.

The heater 251B is, for example, a resistance heater in which a heating element (e.g., a resistance heating element such as nickel-chromium alloy wire) 253B is built into a body portion 252B made of silicon carbide (SiC) or ceramic. The body portion 252B has an annular plate shape, the upper surface of the body portion 252B corresponds to the upper surface (opposing surface) of the heater 251B, and the lower surface of the body portion 252B corresponds to the lower surface of the heater 251B. The heating element 253B is arranged in an annular and strip-shaped area when viewed from above. The body portion 252B is heated and its temperature rises by the heat generated by the heating element 253B. The high-temperature body portion 252B can heat the periphery VW1 of the substrate W by radiant heat.

In the example of Figure 11, a heating flow path 254B is formed inside the body portion 252B. The heating flow path 254B includes a horizontal flow path disposed horizontally in a horizontal plane, which is located linearly below the heating element 253B. A portion of the horizontal flow path is also disposed radially inward and radially outward in various regions, which are located radially inward and radially outward from the heating element 253B, when viewed from above. The heating flow path 254B further includes: an upstream flow path that extends linearly downward from the horizontal flow path and opens on the lower surface of the body portion 252B; and a plurality of downstream flow paths that branch vertically upward from the radially inward and radially outward portions of the horizontal flow path, which are located radially inward and radially outward from the heating element 253B, and open on the upper surface of the body portion 252B as a plurality of spray outlets 25Ba.

Referring also to Figure 9, the upstream port of the heating flow path 254B is connected to the downstream end of the supply pipe 256B, and the upstream end of the supply pipe 256B is connected to the gas supply source 259B. Gas (e.g., inert gas) from the gas supply source 259B is ejected from the nozzle 25Ba through the supply pipe 256B and the heating flow path 254B, and flows towards the peripheral area of the non-component surface Wb of the substrate W. The gas is heated by receiving heat from the substrate 252B as it flows along the heating flow path 254 inside the body portion 252B. The high-temperature gas flows from the nozzle 25Ba towards the non-component surface Wb of the substrate W, heating the substrate W. A valve 257B and a flow regulator 258B are provided in the supply pipe 256B. The opening and closing of valve 257B switches the ejection and stops of high-temperature gas from the nozzle 25Ba of the heating flow path 254B. Flow regulator 258B adjusts the gas flow rate.

<Back Side Angled> In the examples of Figures 9 and 11, an angled nozzle 26B for the back side is also provided in the angled unit 20B. The angled nozzle 26B sprays the treatment liquid towards the peripheral area of the non-component surface Wb of the substrate W. The angled nozzle 26B is positioned vertically below the non-component surface Wb of the substrate W held by the substrate holding portion 21B, and is vertically opposite to the peripheral area of the non-component surface Wb of the substrate W. This angled nozzle 26B is located radially outward from the substrate holding portion 21B.

In the example of Figure 11, a recess 25Bb is formed in the heater 251B. The recess 25Bb is recessed radially inward and extends through the heater 251B in a vertical direction. An angled nozzle 26B is disposed in the recess 25Bb.

In the examples shown in Figures 9 and 11, two angled nozzles 26B are provided. One angled nozzle 26B is connected to the downstream end of the supply pipe 261B, and the upstream end of the supply pipe 261B is connected to the membrane removal liquid supply source 263B. The membrane removal liquid from the membrane removal liquid supply source 263B is supplied to the angled nozzle 26B through the supply pipe 261B and sprayed from the spray outlet of the angled nozzle 26B toward the peripheral area of the non-component surface Wb of the substrate W. A valve 262B is provided in the supply pipe 261B. The spraying and stopping of the membrane removal liquid from the angled nozzle 26B are switched by opening and closing the valve 262B.

Another angled nozzle 26B is connected to the downstream end of the supply pipe 265B, and the upstream end of the supply pipe 265B is connected to the rinsing fluid supply source 268B. The rinsing fluid from the rinsing fluid supply source 268B is supplied to the angled nozzle 26B through the supply pipe 265B, and sprayed from the spray outlet of the angled nozzle 26B toward the peripheral area of the non-component surface Wb of the substrate W. A valve 266B is provided in the supply pipe 265B. The spraying and stopping of the rinsing fluid from the angled nozzle 26B are switched by opening and closing the valve 266B.

<Angle Protection Process> Figure 12 is a flowchart illustrating one specific example of angle protection processing. First, the central robot 32 moves the substrate W into the angle unit 20B (step S21). The substrate holding part 21B holds the moved substrate W.

Next, the substrate holding part 21B rotates the substrate W around the rotation axis Q1 (step S22). Also, the nozzle moving mechanism 222B moves the angled nozzle 22B to the angled processing position, and the angled unit 20B (more specifically, the control part 90) opens valves 257B and 222Ba, causing gas to be ejected from the gas nozzle 241B and the angled nozzle 22Ba (step S23). Furthermore, the heating part 25B heats the periphery of the substrate W (step S24). Specifically, the angled unit 20B begins to energize the heating element and opens valve 257B. Furthermore, the protective cover lifting mechanism 234B raises the protective covers corresponding to the membrane removal liquid in the inner protective cover 232B and the outer protective cover 233B to the protective cover treatment position.

Next, the angled unit 20B opens valves 222Bb and 262B, allowing the membrane removal liquid to be sprayed from angled nozzles 22Bb and 26B (step S25). The membrane removal liquid sprayed from the angled nozzle 22Bb adheres to the upper surface of the protective film F1 at the adhesion position P1, and flows radially outward along the upper surface of the protective film F1, with a portion of it scattering from the periphery of the substrate W (see also Figure 6(b)). At this time, the membrane removal liquid can act on the protective periphery VF1 of the protective film F1 and remove the protective periphery VF1.

A portion of the remaining membrane removal liquid on the protective film F1 remains on the protective periphery VF1, circulating around the rotation axis Q1 as the substrate W rotates. Here, gas is ejected from the angled nozzle 22Ba, located upstream of the angled nozzle 22Bb. This gas blows away the membrane removal liquid remaining on the protective periphery VF1 and circulating approximately once radially outwards. That is, the old membrane removal liquid that has adhered to the adhesion position P1 and circled the rotation axis Q1 approximately once is blown away by the gas from the angled nozzle 22Ba. Therefore, the old membrane removal liquid almost never reaches the adhesion position P1. Therefore, collisions between the new membrane removal solution and the old membrane removal solution at the contact point P1 can be suppressed. This also prevents excessive membrane removal solution from diffusing radially inward at the contact point P1. Furthermore, the point where the gas from the angled nozzle 22Ba collides with the upper surface of the substrate W is radially inward compared to the contact point P1 of the membrane removal solution from the angled nozzle 22Bb. As a result, the gas can flow radially outward from a point radially inward compared to the membrane removal solution, thus more effectively blowing the membrane removal solution radially outward.

The film removal solution sprayed from the angled nozzle 26B adheres to the non-component surface Wb of the substrate W at the application point, flows radially outward along the non-component surface Wb, and disperses from the periphery of the substrate W (see also Figure 6(b)). At this time, the film removal solution can remove the same substance as the protective film F1 adhering to the non-component surface Wb.

Furthermore, although omitted in Figures 9 and 11, an angled nozzle 26B for ejecting gas can be provided, similar to the angled nozzle 22Ba. The angled nozzle 26B for gas is positioned upstream of the substrate W in the direction of rotation, closer to the angled nozzle 26B for film removal liquid, and ejects gas. This gas blows away the old film removal liquid remaining on the non-component surface Wb radially outward. Therefore, excessive film removal liquid at the liquid-attached position on the non-component surface Wb can be suppressed. If there is too much film removal liquid at the liquid application location on the non-component surface Wb, the film removal liquid will circulate along the end face of the substrate W and reach the upper surface of the protective film F1, washing the film removal liquid on the protective film F1 towards the center of the substrate W, but this ejection can be suppressed.

Furthermore, here, the heating section 25B heats the peripheral portion VW1 of the substrate W, thus also raising the temperature of the upper protective peripheral portion VF1. Therefore, it can suppress the temperature drop of the film removal liquid on the protective peripheral portion VF1, allowing the film removal liquid to remove the protective peripheral portion VF1 at a higher processing speed. Furthermore, the contact point of the rinsing liquid from the angled nozzle 22Bc is radially inward than the contact point P1 of the film removal liquid from the angled nozzle 22Bb. This allows the rinsing liquid to properly wash away the film removal liquid. The same applies to the angled nozzle 26B.

When the protective periphery VF1 is sufficiently removed, the angled unit 20B closes valves 222Bb and 262B, stopping the supply of membrane removal fluid. More specifically, when the elapsed time since the start of membrane removal fluid supply is more than a first specific time, the angled unit 20B closes valves 222Bb and 262B. The elapsed time is measured by a known timer circuit within the control unit 90.

Subsequently, the lifting mechanism 234B changes the lifting state of the shield 23B as needed. That is, when the shield for the rinsing fluid is different from the shield for the membrane removal fluid, the lifting mechanism 234B raises the shield corresponding to the rinsing fluid to the shield treatment position.

Next, the angled unit 20B opens valves 222Bc and 266B, causing the rinsing solution to be sprayed from angled nozzles 22Bc and 26B (step S26). The rinsing solution adhering to the surface of the substrate W is subjected to centrifugal force generated by the rotation of the substrate W and flows radially outward, and is dispersed outward from the end face of the substrate W. In this way, the film removal solution on the surface of the substrate W can be rinsed away radially outward using the rinsing solution. That is, the film removal solution on the surface of the substrate W can be replaced with the rinsing solution.

When the membrane removal solution has been fully replaced by the rinsing solution, the angled unit 20B closes valves 222Bc and 266B, stopping the supply of rinsing solution. More specifically, when the elapsed time since the supply of rinsing solution is more than a second specific time, the angled unit 20B closes valves 222Bc and 266B.

Next, the substrate W is dried (step S27). As a specific example, the substrate holding part 21B increases the rotation speed of the substrate W, causing the substrate W to rotate at high speed (so-called rotational drying).

Next, the angled unit 20B closes valves 222Ba and 257B, the nozzle moving mechanism 222B moves the plurality of angled nozzles 22B to the angled standby position, the heating unit 25B stops heating, and the substrate holding unit 21B stops the rotation of the substrate W, releasing the substrate W from holding. Then, the central robot 32 removes the substrate W from the angled unit 20B (step S28). The central robot 32 then moves the substrate W into the cleaning unit 20C.

<Cleaning Unit 20C> Figure 13 is a schematic diagram illustrating one example of the structure of the cleaning unit 20C. The cleaning unit 20C includes a substrate holding part 21C, a cleaning nozzle 22C, and a protective cover 23C.

The substrate holding portion 21C holds the substrate W in a horizontal position and rotates the substrate W about the rotation axis Q1. In the example of FIG13, the substrate holding portion 21C includes a rotating base 211C, a plurality of (more than 3) chuck pins 212C, and a rotating mechanism 213C. The rotating base 211C has a circular plate shape and is arranged horizontally with its thickness direction along the vertical direction. The outer diameter of the circular plate-shaped rotating base 211C is slightly larger than the diameter of the circular substrate W held by the substrate holding portion 21 (see FIG13). Therefore, the rotating base 211C has an upper surface that faces the entire surface of the lower surface (i.e., the non-component surface Wb) of the substrate W to be held in the vertical direction.

In the example shown in Figure 13, a plurality of chuck pins 212C are vertically mounted on the periphery of the upper surface of the rotating base 211C. The plurality of chuck pins 212C are arranged at equal intervals along the circumference corresponding to the periphery of the circular substrate W. Each chuck pin 212C is configured to be driven between a held position abutting against the periphery of the substrate W and an open position away from the periphery of the substrate W. The plurality of chuck pins 212C are driven in conjunction with a linkage mechanism (not shown) housed within the rotating base 211C. The substrate holding part 21C can hold the substrate W in a horizontal position close to the upper surface above the rotating base 211C by stopping the plurality of clamp pins 212C at their respective holding positions, and can release the substrate W by stopping the plurality of clamp pins 212C at their respective open positions.

Rotation mechanism 213C causes rotation base 211C to rotate about rotation axis Q1. Consequently, the base plate W, held by a plurality of chuck pins 212C, also rotates about rotation axis Q1. An example of the configuration of rotation mechanism 213C is the same as that of rotation mechanism 212A.

Furthermore, the substrate holding part 21C does not necessarily need to include the chuck pin 212C. For example, it can also hold the substrate W in the same way as the substrate holding parts 21A and 21B.

The cleaning nozzle 22C sprays treatment fluid toward the substrate W, supplying treatment fluid to the substrate W. The cleaning nozzle 22C is connected to the downstream end of the supply pipe 221C, and the upstream end of the supply pipe 221C is connected to the treatment fluid supply source 223C. The treatment fluid from the treatment fluid supply source 223C is supplied to the cleaning nozzle 22C through the supply pipe 221C and sprayed out from the spray outlet 22c of the cleaning nozzle 22C. A valve 222C is provided in the supply pipe 221C. The opening and closing of the valve 222C switches the spraying and stopping of the treatment fluid from the cleaning nozzle 22C.

The cleaning unit 20C is configured to supply a plurality of treatment fluids. More specifically, the cleaning unit 20C can selectively supply foreign matter removal fluid and membrane removal fluid. For example, two cleaning nozzles 22C may be provided to spray foreign matter removal fluid and membrane removal fluid respectively.

In the example of Figure 13, the cleaning nozzle 22C is configured to move between a cleaning processing position and a cleaning standby position via the nozzle moving mechanism 25C. The cleaning processing position is the position where the cleaning nozzle 22C sprays the processing liquid toward the substrate W, for example, a position perpendicular to the center of the substrate W in the vertical direction. The cleaning standby position is the position where the cleaning nozzle 22C is not spraying the processing liquid toward the substrate W, for example, a position radially outward from the end face of the substrate W. When the cleaning nozzle 22C is stopped in the processing standby position, physical collisions between the cleaning nozzle 22C and the central robotic arm 32 can be avoided when loading or unloading the substrate W. The nozzle moving mechanism 25C, for example, has the same arm rotation mechanism as the nozzle moving mechanism 222B.

In the example shown in Figure 13, a fixed nozzle 24C is also provided in the cleaning unit 20C. The fixed nozzle 24C is positioned vertically above the substrate W held by the substrate holding part 21C and radially outward from the end face of the substrate W. The fixed nozzle 24C is connected to the downstream end of the supply pipe 241C, and the upstream end of the supply pipe 241C is connected to the rinsing liquid supply source 243C. The rinsing liquid from the rinsing liquid supply source 243C is supplied to the fixed nozzle 24C through the supply pipe 241C and sprayed from the spray outlet of the fixed nozzle 24C toward the upper surface of the substrate W (i.e., the component surface Wa). A valve 242C is provided in the supply pipe 241C. The opening and closing of valve 242C switches the spraying of rinsing fluid from fixed nozzle 24C and stops the spraying.

The protective cover 23C is a component used to catch the treatment liquid that splashes from the end face of the substrate W. The protective cover 23C has a cylindrical shape that surrounds the substrate holding portion 21C, and may include a plurality of protective covers that can be raised and lowered independently of each other. In the example of FIG13, as a plurality of protective covers 23C, an inner protective cover 231C, a middle protective cover 232C, and an outer protective cover 233C are shown. Each of the protective covers 231C to 233C surrounds the periphery of the substrate holding portion 21C and has a shape that is approximately rotationally symmetrical with respect to the axis of rotation Q1.

The function of the shield 23C is the same as that of the shield 23B. The inner shield 231C, the middle shield 232C, and the outer shield 233C are components used to receive different types of treatment fluids. Although the specific shape of the shield 23C shown in Figure 13 is different from that of the shield 23B, the shape of the shield 23C itself is not the essence of this embodiment. Therefore, a detailed description is omitted here.

Protective covers 231C to 233C can be raised and lowered by protective cover lifting mechanism 26C. Protective cover lifting mechanism 26C raises and lowers the protective covers 231C to 233C between their respective protective cover processing positions and protective cover standby positions in a manner that prevents the protective covers 231C to 233C from colliding with each other. In the example of Figure 13, protective covers 231C to 233C in the protective cover standby position are shown with solid lines, and a portion of protective covers 231C to 233C in the protective cover processing position is shown with a two-dot chain. An example of the configuration of protective cover lifting mechanism 26C is the same as that of protective cover lifting mechanism 234B.

<Substrate Beveling Process and Protective Film Removal Process> Figure 14 is a flowchart illustrating one specific example of the substrate beveling process (step S3) and the protective film removal process (step S4). First, the central robot 32 moves the substrate W into the cleaning unit 20C (step S31). The substrate holding unit 21C holds the moved-in substrate W.

Next, the substrate holding part 21C rotates the substrate W (step S32). Also, the cover lifting mechanism 26C raises the covers 231C to 233C corresponding to the foreign matter removal liquid to the cover processing position.

Next, the cleaning unit 20C supplies foreign matter removal fluid to the peripheral area VW1 of the substrate W (step S33). Specifically, the nozzle moving mechanism 25C moves the cleaning nozzle 22C to the cleaning treatment position, and the cleaning unit 20C (more specifically, the control unit 90) opens the valve 222C corresponding to the foreign matter removal fluid, so that the foreign matter removal fluid is sprayed out from the spray outlet 22c of the cleaning nozzle 22C. The foreign matter removal fluid is, for example, high-temperature SPM. The foreign matter removal fluid adheres to the upper surface of the protective film F1 and flows radially outward along the upper surface of the protective film F1 due to the centrifugal force generated by the rotation of the substrate W, and then flows in the peripheral area Wa1 of the substrate W (see also FIG6(c)). In this way, the foreign matter removal liquid can act on the foreign matter M1 in the peripheral area Wa1 of the substrate W and remove it. Furthermore, the foreign matter removal liquid also circulates along the end face of the substrate W and reaches the peripheral area of the non-component surface Wb of the substrate W. In this case, the foreign matter removal liquid can also remove the foreign matter M1 from the end face of the substrate W and the peripheral area of the non-component surface Wb.

When foreign matter M1 is sufficiently removed, the cleaning unit 20C will close the valve 222C corresponding to the foreign matter removal fluid. More specifically, when the elapsed time since the supply of foreign matter removal fluid is more than the third specific time, the cleaning unit 20C will close the valve 222C corresponding to the foreign matter removal fluid.

Subsequently, the lifting mechanism 26C changes the lifting state of the cover 23C as needed. That is, when the cover for the rinsing fluid is different from the cover for the foreign matter removal fluid, the lifting mechanism 26C raises the cover corresponding to the rinsing fluid to the cover treatment position.

Next, the cleaning unit 20C supplies rinsing fluid to the substrate W (step S34). As a specific example, the cleaning unit 20C opens valve 242C, causing the rinsing fluid to be sprayed from the nozzle 24C. The rinsing fluid adheres to the center of the upper surface of the protective film F1 and flows radially outward along the upper surface of the protective film F1. The rinsing fluid then flows in the peripheral area Wa1 of the substrate W and disperses from the end face of the substrate W. In this way, the foreign matter removal fluid on the substrate W is washed away by the rinsing fluid. That is, the foreign matter removal fluid on the substrate W is replaced by the rinsing fluid.

When the foreign matter removal fluid has been fully replaced by the rinsing fluid, the cleaning unit 20C closes valve 242C. More specifically, when the elapsed time since the rinsing fluid was supplied is more than the fourth specific time, the cleaning unit 20C closes valve 242C.

Subsequently, the lifting mechanism 26C changes the lifting state of the shield 23C as needed. That is, when the shield for the membrane removal liquid is different from the shield for the rinsing liquid, the lifting mechanism 26C raises the shield corresponding to the membrane removal liquid to the shield treatment position.

Next, the cleaning unit 20C supplies the film removal solution to the substrate W (step S41). Specifically, the cleaning unit 20C opens the valve 222C corresponding to the film removal solution, causing the film removal solution to be sprayed out from the spray outlet 22c of the cleaning nozzle 22C. The film removal solution is, for example, hydrofluoric acid. The film removal solution adheres to the center of the upper surface of the protective film F1, flows radially outward along the upper surface of the protective film F1, and then flows in the peripheral area Wa1 of the substrate W, and disperses outward from the end face of the substrate W (see also Figure 6(d)). At this time, the film removal solution acts on the protective film F1 on the substrate W to remove the protective film F1.

When the protective membrane F1 is sufficiently removed, the cleaning unit 20C will close the valve 222C corresponding to the membrane removal liquid. More specifically, when the elapsed time since the supply of membrane removal liquid is more than the 5th specific time, the cleaning unit 20C will close the valve 222C corresponding to the membrane removal liquid.

Subsequently, the lifting mechanism 26C changes the lifting state of the shield 23C as needed. That is, when the shield for the rinsing fluid and the shield for the membrane removal fluid are different, the lifting mechanism 26C raises the shield corresponding to the rinsing fluid to the shield treatment position.

Next, the cleaning unit 20C supplies rinsing solution to the substrate W (step S42). As a specific example, the cleaning unit 20C opens valve 242C, causing the rinsing solution to be sprayed from the nozzle 24C. The rinsing solution adheres to the center of the component surface Wa of the substrate W, flows outward along the radial direction of the component surface Wa, and disperses outward from the end face of the substrate W. In this way, the film removal solution on the substrate W is washed away by the rinsing solution. That is, the film removal solution on the substrate W is replaced by the rinsing solution.

When the membrane removal solution has been fully replaced by the rinsing solution, the cleaning unit 20C closes valve 242C. More specifically, when the elapsed time since the rinsing solution was supplied is more than the sixth specific time, the cleaning unit 20C closes valve 242C. Furthermore, the nozzle moving mechanism 25C moves the cleaning nozzle 22C to the cleaning standby position.

Next, the cleaning unit 20C dries the substrate W (step S43). As a specific example, the substrate holding unit 21C increases the rotation speed of the substrate W, causing the substrate W to rotate at high speed (so-called rotational drying). When the substrate W is sufficiently dry, the substrate holding unit 21C stops the rotation of the substrate W.

Then, the substrate holding section 21C releases the substrate W from the holding section, and the central robot 32 removes the substrate W from the cleaning unit 20C (step S44).

Through the above actions, the substrate processing apparatus 100 is able to process the substrate periphery VW1 of the substrate W.

<Variation Example> In the above example, during the substrate bevel treatment (step S3), the cleaning nozzle 22C sprays foreign matter removal liquid toward the center of the substrate W, causing the foreign matter removal liquid to adhere to the center of the protective film F1 on the substrate W. However, this is not a limitation. The adhesion position of the foreign matter removal liquid can be appropriately varied as long as it is supplied to the peripheral area Wa1 of the substrate W. For example, the cleaning nozzle 22C may also spray the foreign matter removal liquid toward the adhesion position between the center and the periphery of the protective film F1.

Furthermore, in the above example, the protective film F1 is formed by wet processing in the protective film formation process, and the protective film F1 is removed by wet processing in the protective film removal process. Therefore, a low-cost wet processing unit 20 can be used. However, for example, if cost reduction is not required, at least one of the formation and removal of the protective film F1 can also be performed by dry processing.

Furthermore, in the above example, although the substrate processing apparatus 100 is provided with a coating unit 20A, a heat treatment unit 10A, a beveling unit 20B, and a cleaning unit 20C, these can also be distributed among different processing apparatuses. For example, the coating unit 20A and the heat treatment unit 10A can be provided in a coating and developing machine (first processing apparatus), and the beveling unit 20B and the cleaning unit 20C can be provided in a second processing apparatus different from the coating and developing machine. In this case, the first processing apparatus and the second processing apparatus each include a loading port 111, and a transport device is provided between the first processing apparatus and the second processing apparatus to transport and store a carrier C containing a plurality of substrates W.

Here, the correspondence between the terminology in the "Technical Means for Solving the Problem" column and the terminology in the "Implementation Method" column is explained. Step 1, for example, is equivalent to step S2 or a combination of steps S1 and S2. Step 1 is the process of forming a protective film containing an SOG film on the main surface of the substrate. The protective film is formed such that the periphery of the main surface is not covered by the protective film, while the area on the main surface that is inward from the periphery is covered by the protective film. Step 2, which removes residue or film residue on the periphery using a treatment solution containing a mixture of sulfuric acid and hydrogen peroxide, is equivalent to step S3. Step 3, which removes the protective film, is equivalent to step S4.

As described above, the substrate processing apparatus 100 and the substrate processing method have been explained in detail, but the above description is illustrative in all respects and is not intended to limit the scope thereof. It should be understood that numerous variations not illustrated can be conceived without departing from the scope of the invention. The components described in the above embodiments and variations may be appropriately combined or omitted as long as they do not contradict each other.

10: Dry Processing Unit 10A: Heat Treatment Unit 10B: Cooling Unit 10C: Indoor Conveying Unit 11A: Heating Plate 11B: Cooling Plate 12A: Lifting Pin 12B: Lifting Pin 20: Wet Processing Unit 20A: Coating Unit 20B: Angled Unit 20C: Cleaning Unit 21A: Substrate Holding Section 21B, 21C: Substrate Holding Section 22a: Spray Outlet 22b, 22c: Spray Outlet 22A: Coating Nozzle 22B: First Spray Nozzle (Angled Nozzle) 22Ba～22Bd: Angled Nozzle 22C: Second Nozzle (Cleaning Nozzle) 23A: Protective Cover 23B: Protective Cover 23C: Protective Cover 24B: Surface Protection Section 24C: Fixed Nozzle 25A: Nozzle Moving Mechanism 25B: Heating Section 25Ba: Spray Outlet 25Bb: Recess 25C: Nozzle Moving Mechanism 26A: Protective Cover Lifting Mechanism 26B: Angled Nozzle 26C: Protective Cover Lifting Mechanism 27B: Gas Nozzle Moving Mechanism 30: Conveying Unit 31: Shuttle Conveying Unit 32: Central Robotic Arm 90: Control Unit 91: Data Processing Unit 92: Memory Unit 93: Busbar 100: Substrate processing device 110: Transfer unit 111: Loading port 112: Transfer robot 120: Device body 211A: Platform 211B: Base 211C: Rotating base 212A: Rotation mechanism 212C: Chuck pin 213A: Shaft 213C: Rotation mechanism 214A: Motor 221A: Supply pipe 221B: Holding component 221Ba: Supply pipe 221Bb: Supply pipe 221Bc: Supply pipe 221Bd: Supply pipe 221C: Supply pipe 222A: Valve 222B: Nozzle moving mechanism 222Ba: Valve 222Bb: Valve 222Bc: Valve 222Bd: Valve 222C: Valve 223A: Coating solution supply source 223B: Arm 223Ba: Gas supply source 223Bb: Membrane removal solution supply source 223Bc: Rinsing solution supply source 223Bd: Alkaline solution supply source 223C: Treatment solution supply source 224B: Support column 225B: Drive unit 231B: Base component 231C: Inner protective cover 232B: Inner protective cover 232C: Middle protective cover 233B: Outer protective cover 233C: Outer protective cover 234B: Protective cover lifting mechanism 241B: Gas nozzle 241C: Supply pipe 242B: Cylindrical component 242C: Valve 243B: Shut-off plate 243C: Rinsing fluid supply source 244B: Head 245B: Supply pipe 246B: Valve 247B: Flow regulator 248B: Gas supply source 251B: Heater 252B: Main body 253B: Heating element 254B: Heating flow path 255B: Gas supply section 256B: Supply pipe 257B: Valve 258B: Flow regulator 259B: Gas supply source 261B: Supply pipe 262B: Valve 263B: Membrane removal fluid supply source 265B: Supply pipe 266B: Valve 268B: Rinsing fluid supply source 921: Non-temporary memory 922: Temporary memory C: Carrier F1: Protective film F2: Coating FP: Internal flow path FP1: Lead direct flow path FP2: Inclined flow path FS1: End face M1: Foreign object P1: Liquid contact point Q1: Rotation axis S1: Step S2: Step S3: Step S4: Step S11: Step S12: Step S13: Step S14: Step S15: Step S16: Step S17: Step S21: Step S22: Step S23: Step S24: Step S25: Step S26: Step S27: Step S28: Step S31: Step S32: Step S33: Step S34: Step S41: Step S42: Step S43: Step S44: Step VF1: Protected Peripheral Area VW1: Substrate Peripheral Area W: Substrate Wa: Component Side Wa1: Peripheral Area Wa2: Central Area Wb: Non-Component Side

Figure 1 is a top view schematically showing one example of the structure of a substrate processing apparatus. Figure 2 is a longitudinal sectional view schematically showing one example of the structure of a substrate processing apparatus. Figure 3 is a diagram schematically showing one example of the structure of substrate W. Figure 4 is a functional block diagram schematically showing one example of the internal structure of the control unit. Figure 5 is a flowchart showing one example of a substrate processing method performed by the substrate processing apparatus. Figures 6(a) to (d) are diagrams schematically showing one example of the status of substrate W in each process. Figure 7 is a diagram schematically showing one example of the structure of a coating unit. Figure 8 is a flowchart showing one specific example of a protective film formation process. Figure 9 is a diagram schematically showing one example of the structure of an angled unit. Figure 10 is a top view schematically showing one example of the structure of the bevel unit. Figure 11 is a top view schematically showing one example of the structure of the heating section. Figure 12 is a flowchart showing one specific example of the bevel protection treatment. Figure 13 is a diagram schematically showing one example of the structure of the cleaning unit. Figure 14 is a flowchart showing one specific example of the substrate bevel treatment and protective film removal treatment.

S1: Steps

S2: Steps

S3: Steps

S4: Steps

Claims (6)

A substrate processing method includes: A first step, which involves forming a protective film comprising an SOG film on a main surface of a substrate, wherein the protective film is formed such that the peripheral portion of the main surface is not covered by the protective film, and an area on the main surface that is inner than the peripheral portion is covered by the protective film; A second step, which, after the first step, removes residue or residual film on the peripheral portion using a treatment solution comprising a mixture of sulfuric acid and hydrogen peroxide; and A third step, which, after the second step, removes the protective film; and The residue or residual film includes at least one of an anti-corrosion agent comprising a hardened layer, amorphous carbon, and a NiPt alloy. A substrate processing method includes: A first step, which involves forming a protective film comprising an SOG film on the main surface of a substrate, wherein the protective film is formed such that the peripheral portion of the main surface is not covered by the protective film, and an area on the main surface that is inward from the peripheral portion is covered by the protective film; A second step, which, after the first step, removes residue or film residue on the peripheral portion using a treatment solution comprising a mixture of sulfuric acid and aqueous hydrogen peroxide; and A third step, which, after the second step, removes the protective film; and In the third step, the protective film is removed using a solution comprising hydrofluoric acid. A substrate processing method includes: A first step, which involves forming a protective film comprising an SOG film on a main surface of a substrate, wherein the protective film is formed such that the peripheral portion of the main surface is not covered by the protective film, and an area on the main surface that is inward from the peripheral portion is covered by the protective film; A second step, which, after the first step, removes residue or film residue on the peripheral portion using a treatment solution comprising a mixture of sulfuric acid and hydrogen peroxide; and A third step, which, after the second step, removes the protective film; and The first step described above includes a bevel protection step, in which a hydrofluoric acid-containing solution is sprayed from a first nozzle toward the substrate. This solution removes the peripheral portion of the SOG film formed across the entire main surface of the substrate, forming a protective film on the inner region of the main surface. In the second step, a treatment liquid is sprayed from a second nozzle having a larger nozzle opening than the first nozzle toward the substrate. This treatment liquid removes any residue or residual film. As in the substrate processing method of claim 3, in the first step described above, the first nozzle, positioned vertically opposite the main surface of the substrate, sprays the chemical solution in an outwardly directed direction to remove the peripheral portion of the SOG film. In the second step described above, the second nozzle sprays the treatment liquid toward the protective film, and the rotation of the substrate causes the treatment liquid adhering to the protective film to flow from the protective film toward the peripheral portion of the substrate. As in the substrate processing method of claim 3, the first step further includes a protective film formation step, which is performed before the protective bevel step, wherein a coating liquid is applied to the main surface of the substrate, and the coating liquid is dried to form the protective film. A substrate processing apparatus includes: a substrate holding section that holds a substrate in a horizontal position, wherein the peripheral portion of its main surface is not covered by a protective film containing an SOG film, and a region on the main surface that is inner from the peripheral portion is covered by the protective film, and rotates the substrate; a first nozzle that sprays a liquid containing hydrofluoric acid toward the substrate, thereby removing the peripheral portion of the SOG film formed on the entire main surface of the substrate by the liquid, and forming the protective film in the inner region of the main surface; and The second nozzle has a larger nozzle opening than the first nozzle, and sprays a treatment solution containing a mixture of sulfuric acid and hydrogen peroxide toward the substrate, thereby removing residues or film from the periphery of the main surface of the substrate.