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TWI911835B - Copper alloys and electronic components - Google Patents

Copper alloys and electronic components

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Publication number
TWI911835B
TWI911835B TW113129397A TW113129397A TWI911835B TW I911835 B TWI911835 B TW I911835B TW 113129397 A TW113129397 A TW 113129397A TW 113129397 A TW113129397 A TW 113129397A TW I911835 B TWI911835 B TW I911835B
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Taiwan
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copper alloy
mass
conductivity
copper
strength
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TW113129397A
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Chinese (zh)
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TW202523867A (en
Inventor
辻江健太
北川寛之
松本創央志
塚瀬大規
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日商Jx金屬股份有限公司
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Publication of TW202523867A publication Critical patent/TW202523867A/en
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Publication of TWI911835B publication Critical patent/TWI911835B/en

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Abstract

本發明之目的在於提供一種具有高導電率及高強度之銅合金及含有其之電子零件。 本發明之銅合金含有2.3~4.6質量%之Ni、0.10~0.50質量%之Co、0.60~1.3質量%之Si、0.010~0.10質量%之Cr,剩餘部分由Cu及不可避免之雜質構成。 The purpose of this invention is to provide a copper alloy with high conductivity and high strength, and electronic components containing the same. The copper alloy of this invention contains 2.3–4.6% by mass Ni, 0.10–0.50% by mass Co, 0.60–1.3% by mass Si, and 0.010–0.10% by mass Cr, with the remainder consisting of Cu and unavoidable impurities.

Description

銅合金及電子零件Copper alloys and electronic components

本發明係關於一種銅合金及電子零件。This invention relates to a copper alloy and electronic components.

卡遜合金係於Cu基質中析出有Ni-Si、Co-Si、Ni-Co-Si等金屬間化合物之合金,兼具高強度與高導電率。卡遜合金由於具有此種特性,故作為電子零件中之銅合金零件,例如可於半導體封裝體中用作支撐固定半導體元件且形成內部配線之引線框架(例如參照專利文獻1)。 [先前技術文獻] [專利文獻] Carson alloys are copper-based alloys containing intermetallic compounds such as Ni-Si, Co-Si, and Ni-Co-Si, exhibiting both high strength and high conductivity. Due to these properties, Carson alloys are used as copper alloy components in electronic devices, for example, in semiconductor packages as lead frames to support and fix semiconductor devices and form internal wiring (see, for example, Patent 1). [Prior Art Documents] [Patent Documents]

[專利文獻1]日本特開2018-035437號公報[Patent Document 1] Japanese Patent Application Publication No. 2018-035437

[發明所欲解決之課題][The problem the invention aims to solve]

隨著近年來電子零件之高功能化,電子零件中含有之由卡遜合金之銅合金製造的銅合金零件(或銅合金零件中之特定部分)高度微細化,對於銅合金,亦要求具備高導電率且同時進一步提升因應該微細化之特性。 例如作為電子零件之半導體封裝體中,由於近年來日益高功能化,半導體封裝體之結構細密化,進而有封裝體本身大型化之情況。因此,由半導體封裝體之構建用銅合金製造之引線框架,尤其是引線框架內之引線亦不斷微細化。引線係於半導體封裝體內成為用以與外部配線連接之內部配線(接腳)的部分,由於引線之微細化,使得引線長度增加或各引線間窄間距化。然而,由於此種微細化,有時引線難以具有足夠之強度,於引線框架或半導體封裝體之製造步驟(例如,將銅合金板藉由半蝕刻製造期望之引線框架的步驟,或將半導體元件配置於引線框架後,為了將引線與半導體元件連接而進行線接合的步驟等)中,有時引線發生變形而不易以高精度維持其形狀。其結果,有時無法充分效率佳地製造半導體封裝體,對於銅合金,要求進一步提高強度。 With the increasing functionality of electronic components in recent years, copper alloy parts (or specific portions of copper alloy parts) made of Carson's alloy are becoming increasingly miniaturized. This necessitates that copper alloys possess high conductivity while simultaneously enhancing their properties to accommodate this miniaturization. For example, in semiconductor packages, which are electronic components, the increasing functionality and miniaturization of semiconductor package structures have led to larger package sizes. Consequently, the lead frames constructed from copper alloys within semiconductor packages, and especially the leads within those lead frames, are also continuously becoming miniaturized. Leads are the internal wiring (pins) within a semiconductor package used to connect to external wiring. Due to miniaturization, lead lengths have increased or the spacing between leads has narrowed. However, this miniaturization sometimes makes it difficult for leads to possess sufficient strength. During leadframe or semiconductor package manufacturing processes (e.g., the process of creating the desired leadframe from a copper alloy plate through semi-etching, or the wire bonding process to connect leads to semiconductor components after placing them in the leadframe), lead deformation can occur, making it difficult to maintain their shape with high precision. As a result, semiconductor packages cannot always be manufactured efficiently, and for copper alloys, further increases in strength are required.

本發明之目的在於提供一種具有高導電率及高強度之銅合金及含有其之電子零件。 [解決課題之技術手段] The purpose of this invention is to provide a copper alloy with high conductivity and high strength, and electronic components containing the same. [Technical Means for Solving the Problem]

於一實施形態中,本發明之銅合金含有2.3~4.6質量%之Ni、0.10~0.50質量%之Co、0.60~1.3質量%之Si、0.010~0.10質量%之Cr,剩餘部分由Cu及不可避免之雜質構成。In one embodiment, the copper alloy of the present invention contains 2.3 to 4.6% by mass of Ni, 0.10 to 0.50% by mass of Co, 0.60 to 1.3% by mass of Si, and 0.010 to 0.10% by mass of Cr, with the remainder consisting of Cu and unavoidable impurities.

於一實施形態中,本發明之電子零件含有上述本發明之銅合金。 [發明之效果] In one embodiment, the electronic component of the present invention comprises the copper alloy described above. [Effects of the Invention]

本發明可提供一種具有高導電率及高強度之銅合金及含有其之電子零件。This invention provides a copper alloy with high conductivity and high strength, and electronic components containing the same.

以下,詳細地說明本發明之實施形態(以下,亦稱為「本實施形態」),但本發明並不限定於下述實施形態。 本發明中,「A~B」意指「A以上且B以下」。此處,A及B表示數值。 The embodiments of the present invention (hereinafter also referred to as "the embodiments") are described in detail below, but the present invention is not limited to the embodiments described below. In the present invention, "A to B" means "A or more and B or less". Here, A and B represent numerical values.

[銅合金] 本實施形態之銅合金含有2.3~4.6質量%之Ni、0.10~0.50質量%之Co、0.60~1.3質量%之Si、0.010~0.10質量%之Cr,剩餘部分由Cu及不可避免之雜質構成。即,本實施形態之銅合金係Cu-Ni-Co-Si系合金。Ni、Co及Si可藉由進行適當之熱處理而形成Ni-Co-Si系金屬間化合物之析出粒子,實現高導電率及高強度化。 [Copper Alloy] The copper alloy of this embodiment contains 2.3–4.6% by mass Ni, 0.10–0.50% by mass Co, 0.60–1.3% by mass Si, and 0.010–0.10% by mass Cr, with the remainder consisting of Cu and unavoidable impurities. That is, the copper alloy of this embodiment is a Cu-Ni-Co-Si alloy. Ni, Co, and Si can be precipitated into Ni-Co-Si intermetallic compound particles through appropriate heat treatment, achieving high conductivity and high strength.

本實施形態之銅合金的組成中,Ni濃度為2.3~4.6質量%,Co濃度為0.10~0.50質量%,Cr濃度為0.010~0.10質量%。藉此,能夠維持銅合金之高導電率,且同時更加提高銅合金之強度。 於Ni濃度未達2.3質量%之情形時,無法獲得期望之強度。於Co濃度未達0.10質量%之情形時,無法獲得期望之強度或導電性。於Cr濃度未達0.010質量%之情形時,無法獲得期望之強度。 於Ni濃度超過4.6質量%之情形時,雖然可獲得足夠之強度,但會導致導電性降低。又,於Co濃度超過0.50質量%之情形時,雖然可獲得充分之導電性,但難以獲得高強度。於Cr濃度超過0.10質量%之情形時,Cr與其他含有成分形成化合物,而會難以形成目標之Ni-Co-Si系析出物。其結果,無法獲得期望之強度。 Ni濃度較佳為2.8~4.4質量%,更佳為3.0~4.0質量%,進而較佳為3.3~3.7質量%。又,Co濃度較佳未達0.50質量%,更佳為0.10~0.40質量%,進而較佳為0.20~0.30質量%。Cr濃度較佳為0.020~0.070質量%,更佳為0.040~0.060質量%。 In this embodiment of the copper alloy, the Ni concentration is 2.3–4.6% by mass, the Co concentration is 0.10–0.50% by mass, and the Cr concentration is 0.010–0.10% by mass. This maintains the high electrical conductivity of the copper alloy while simultaneously increasing its strength. When the Ni concentration is less than 2.3% by mass, the desired strength cannot be obtained. When the Co concentration is less than 0.10% by mass, the desired strength or electrical conductivity cannot be obtained. When the Cr concentration is less than 0.010% by mass, the desired strength cannot be obtained. When the Ni concentration exceeds 4.6% by mass, sufficient strength can be obtained, but conductivity decreases. Similarly, when the Co concentration exceeds 0.50% by mass, while sufficient conductivity is obtained, high strength is difficult to achieve. When the Cr concentration exceeds 0.10% by mass, Cr forms compounds with other components, making it difficult to form the target Ni-Co-Si precipitates. As a result, the desired strength cannot be obtained. The preferred Ni concentration is 2.8–4.4% by mass, more preferably 3.0–4.0% by mass, and even more preferably 3.3–3.7% by mass. Furthermore, the Co concentration is preferably less than 0.50% by mass, more preferably 0.10–0.40% by mass, and even more preferably 0.20–0.30% by mass. The Cr concentration is preferably 0.020–0.070% by mass, and even more preferably 0.040–0.060% by mass.

本實施形態之銅合金的組成中,Si濃度為0.6~1.3質量%。藉此,能夠維持銅合金之高導電率,且同時更加提高銅合金之強度。若Si濃度未達0.60質量%,則無法獲得期望之強度。又,若Si濃度超過1.3質量%,則雖然可獲得足夠之強度,但會導致導電性降低。 Si濃度較佳為0.7~1.2質量%,更佳為0.8~1.0質量%。 In the copper alloy of this embodiment, the Si concentration is 0.6–1.3% by mass. This maintains the high conductivity of the copper alloy while simultaneously improving its strength. If the Si concentration is less than 0.60% by mass, the desired strength cannot be obtained. Furthermore, if the Si concentration exceeds 1.3% by mass, although sufficient strength is achieved, conductivity will decrease. The Si concentration is preferably 0.7–1.2% by mass, more preferably 0.8–1.0% by mass.

如上述,認為由Ni、Co及Si形成之Ni-Co-Si系析出物係以(Ni+Co)Si為主之金屬間化合物。然而,銅合金中之Ni、Co及Si未必會因銅合金板之製造步驟中的時效處理而全部成為析出物,於某種程度上可能以固溶於Cu基質中之狀態存在。固溶狀態之Ni、Co及Si能夠使銅合金板之強度略微提高,但與析出狀態相比,該效果較小,又,可能成為使導電率降低之主要原因。因此,Ni、Co及Si含量之比,較佳接近於(Ni+Co)Si之組成比。因此,Ni及Co之合計相對於Si之質量之比R A較佳為3.5~5.0,更佳為3.5~4.5。 As mentioned above, the Ni-Co-Si precipitates formed by Ni, Co, and Si are considered to be intermetallic compounds mainly composed of (Ni+Co)Si. However, Ni, Co, and Si in copper alloys may not all become precipitates due to the aging treatment during the manufacturing process of the copper alloy sheet; they may exist to some extent in a solid-dissolved state within the Cu matrix. The solid-dissolved Ni, Co, and Si can slightly increase the strength of the copper alloy sheet, but this effect is smaller compared to the precipitated state, and may become the main cause of decreased conductivity. Therefore, the ratio of Ni, Co, and Si content is preferably close to the composition ratio of (Ni+Co)Si. Therefore, the mass ratio (RA ) of Ni and Co to Si is preferably 3.5–5.0, more preferably 3.5–4.5.

Ni-Co-Si系析出物,如上述,有助於提高銅合金之強度及導電率,而Ni有主要有助於提高銅合金之強度的傾向,另一方面,Co有主要有助於提高銅合金之導電率的傾向。因此,就維持銅合金之高導電率且同時較高地提升強度之觀點,Co相對於Ni之質量之比R B可設為0.010~0.155。藉由Co相對於Ni之質量之比R B為0.010以上,能夠維持銅合金之高導電率。藉由Co相對於Ni之質量之比R B為0.155以下,能夠有效地提高銅合金之強度。 比R B較佳為0.025~0.155,更佳為0.056~0.086。 As mentioned above, Ni-Co-Si precipitates contribute to improving the strength and conductivity of copper alloys. Ni primarily contributes to increasing the strength of copper alloys, while Co primarily contributes to increasing their conductivity. Therefore, from the perspective of maintaining high conductivity while simultaneously improving strength, the mass ratio of Co to Ni, RB, can be set to 0.010 to 0.155. A Co-to-Ni mass ratio RB of 0.010 or higher maintains high conductivity in copper alloys. A Co-to-Ni mass ratio RB of 0.155 or lower effectively improves the strength of copper alloys. A RB ratio of 0.025 to 0.155 is preferred, and more preferably 0.056 to 0.086.

本實施形態之銅合金的組成中,作為上述元素以外之元素,可進而含有合計0.010~1.0質量%之選自由Mg、Fe、P、Cr、Ag、Zn、Sn、Pb、Zr、Al、As、Se、Te、Sb、Bi、Au、Ti、Nb、V、Ta、W、Mo及Mn所組成之群中的一種以上元素(以下,亦稱為「添加元素」)。藉此,能夠改善銅合金之強度、耐熱性、耐應力緩和性等。 藉由添加元素之合計量為0.010質量%以上,有容易獲得上述所期望之效果的傾向。又,藉由為1.0質量%以下,能夠獲得所期望之特性,且同時防止導電性降低。 添加元素之合計量較佳為0.020~0.080質量%,更佳為0.050~0.080質量%。 In the composition of the copper alloy of this embodiment, in addition to the elements mentioned above, one or more elements selected from the group consisting of Mg, Fe, P, Cr, Ag, Zn, Sn, Pb, Zr, Al, As, Se, Te, Sb, Bi, Au, Ti, Nb, V, Ta, W, Mo, and Mn (hereinafter also referred to as "added elements") may be included in a total of 0.010 to 1.0% by mass. This improves the strength, heat resistance, and stress mitigation properties of the copper alloy. When the total amount of added elements is 0.010% by mass or more, the desired effects are more easily obtained. Furthermore, when the amount is 1.0% by mass or less, the desired properties can be obtained while preventing a decrease in conductivity. The total amount of added elements is preferably 0.020–0.080% by mass, more preferably 0.050–0.080% by mass.

本實施形態中,為上述以外之成分的剩餘部分係由Cu及不可避免之雜質構成。此處,所謂不可避免之雜質,意指於製造步驟中無法避免混入材料中之雜質元素。作為該不可避免之雜質的各元素之濃度,例如可設為0.015質量%以下,較佳為0%(無法檢出)。 銅合金之組成亦可藉由濕式分析進行測定。Ni可使用銅分離二甲基乙二肟重量法(JIS-H1056(2003)),Si可使用二氧化矽重量法(JIS-H1061(2006))。其他添加元素及雜質元素可使用ICP發射光譜分析法,其他添加元素之分析係使用內標準法進行,使用Y(釔)作為內標準物質進行分析。內標準物質亦可選擇Y以外之元素。ICP發射光譜分析係使用日立高新技術科學公司製造之ICP發射光譜分析裝置(ICP-OES)SPS3100或與其同等之裝置進行測定。於ICP發射光譜分析法之情形時,係將銅合金之樣品溶解於含有鹽酸及硝酸之混酸(以體積比2:1:2含有鹽酸、硝酸及水)所得者進行稀釋後使用。 又,銅合金之組成亦可使用螢光X射線分析進行測定。作為螢光X射線分析裝置,可使用理學公司製造之Simultix14或與其同等之裝置。分析面使用經以表面最大粗糙度Rz(JIS-B0601(2013))成為6.3 μm以下之方式進行切削或機械研磨者即可。於自熔解鑄造中之熔液採集螢光X射線分析用樣品之情形時,在澆鑄成30~40 mmΦ、厚度50~80 mm左右之形狀後,切斷成厚度10~20 mm左右,然後將切斷面作為分析面。螢光X射線分析係基於JIS K 0119:2008來進行,以波長色散方式測定。 In this embodiment, the remainder other than the components mentioned above consists of Cu and unavoidable impurities. Here, unavoidable impurities refer to impurity elements that cannot be avoided from being incorporated into the material during the manufacturing process. The concentration of each element as an unavoidable impurity can be, for example, set to less than 0.015% by mass, preferably 0% (undetectable). The composition of the copper alloy can also be determined by wet analysis. Ni can be determined using the copper separation dimethylglyoxime gravimetric method (JIS-H1056 (2003)), and Si can be determined using the silicon dioxide gravimetric method (JIS-H1061 (2006)). Other added elements and impurities can be analyzed using ICP-OES. The analysis of other added elements is performed using an internal standard method, with Y (yttrium) used as the internal standard. Elements other than Y can also be selected as the internal standard. ICP-OES analysis is performed using a Hitachi Advanced Technology & Science Corporation ICP-OES apparatus (ICP-OES) SPS3100 or an equivalent apparatus. In the case of ICP-OES analysis, the copper alloy sample is dissolved in a mixed acid containing hydrochloric acid and nitric acid (in a volume ratio of 2:1:2 containing hydrochloric acid, nitric acid, and water), diluted, and then used. Furthermore, the composition of the copper alloy can also be determined using fluorescent X-ray analysis. As a fluorescent X-ray analysis apparatus, Rigaku's Simultix14 or an equivalent apparatus can be used. The analysis surface can be prepared by cutting or mechanically grinding to achieve a maximum surface roughness Rz (JIS-B0601 (2013)) of 6.3 μm or less. When collecting samples for fluorescent X-ray analysis from the molten metal during melting casting, after casting to a shape of approximately 30–40 mm Φ and 50–80 mm thickness, cut the sample to a thickness of approximately 10–20 mm, and then use the cut surface as the analysis surface. Fluorescent X-ray analysis is performed based on JIS K 0119:2008, using wavelength dispersion.

本實施形態之銅合金並無特別限定,例如可如下述般藉由含有壓延步驟之製造方法而製成銅合金板。作為銅合金板,若為由上述組成構成且具有規定厚度之立體形狀的物體,則並無特別限定。該銅合金板之「板」亦包括片、條、箔。又,該銅合金板例如不僅包含為了用於電子零件而進行加工之前的銅合金板,亦包含加工中或加工後之狀態的銅合金板。銅合金板之厚度例如為0.030~1.2 mm。該厚度較佳為0.050~0.60 mm,更佳為0.080~0.30 mm。The copper alloy used in this embodiment is not particularly limited, and for example, a copper alloy sheet can be manufactured by a manufacturing method including a rolling step, as described below. As a copper alloy sheet, there is no particular limitation on whether it is a three-dimensional object composed of the above-described components and having a specified thickness. The term "plate" in the context of the copper alloy sheet also includes sheets, strips, and foils. Furthermore, the copper alloy sheet includes, for example, not only copper alloy sheets before processing for use in electronic components, but also copper alloy sheets in the process of processing or after processing. The thickness of the copper alloy sheet is, for example, 0.030 to 1.2 mm. This thickness is preferably 0.050 to 0.60 mm, and more preferably 0.080 to 0.30 mm.

本實施形態之銅合金,由於具有如上述之組成,故具有高導電率及強度。具體而言,本實施形態之銅合金於經過壓延步驟所製造之銅合金板中,與壓延方向平行之方向上的拉伸強度可為870 MPa以上。由於如此具有高拉伸強度,故能夠抑制由銅合金製造之電子零件用之經微細化的銅合金零件或銅合金零件中之部分於電子零件之製造步驟中、具體而言亦包含加工銅合金板而製造銅合金零件(例如引線框架)之步驟在內的至製造電子零件之一系列步驟中可能產生之變形。 與壓延方向平行之方向上的拉伸強度較佳為930 MPa以上,更佳為940 MPa以上,進而較佳為950 MPa以上。 與壓延方向平行之方向上的拉伸強度之上限並無特別限定,該拉伸強度例如可為1200 MPa以下,亦可為1100 MPa以下,或亦可為1000 MPa以下。 The copper alloy of this embodiment, due to its composition as described above, possesses high conductivity and strength. Specifically, the tensile strength of the copper alloy of this embodiment, in a copper alloy sheet manufactured through a rolling process, in the direction parallel to the rolling direction can reach 870 MPa or higher. Because of this high tensile strength, deformation that may occur during the manufacturing process of electronic components, specifically including the step of processing copper alloy sheets to manufacture copper alloy parts (e.g., lead frames), is suppressed. The tensile strength in the direction parallel to the rolling direction is preferably 930 MPa or higher, more preferably 940 MPa or higher, and even more preferably 950 MPa or higher. There is no particular upper limit to the tensile strength in the direction parallel to the rolling direction; for example, it may be 1200 MPa or lower, 1100 MPa or lower, or 1000 MPa or lower.

與壓延方向平行之方向上的拉伸強度,可依據JIS-Z2241(2011)使用拉伸試驗機進行測定。具體而言,以拉伸方向成為與壓延方向平行之方向的方式,使用壓製機由各試樣製作JIS13B號試驗片。關於拉伸試驗之條件,將試驗片寬度設為12.5 mm,將測定溫度設為室溫(15~35℃),將拉伸速度設為5 mm/min,將標距(gauge length)設為50 mm。可用2個試驗片進行試驗,將2個數據之平均值作為本發明中之與壓延方向平行之方向上的拉伸強度。上述拉伸速度相當於JIS標準所記載之十字頭位移速度。作為拉伸試驗機,可使用TSE股份有限公司製造之AUTO COM AC-100KN-C或與其同等之裝置。 又,藉由將銅合金之組成設為上述本實施形態之銅合金之組成,而能夠使與壓延方向平行之方向上的拉伸強度處於所期望之範圍。 The tensile strength in the direction parallel to the rolling direction can be measured using a tensile testing machine according to JIS-Z2241 (2011). Specifically, JIS 13B test pieces are prepared from each sample using a pressing machine with the tensile direction parallel to the rolling direction. Regarding the tensile test conditions, the test piece width is set to 12.5 mm, the measurement temperature is set to room temperature (15–35°C), the tensile speed is set to 5 mm/min, and the gauge length is set to 50 mm. Two test pieces can be used for the test, and the average of the two data points is taken as the tensile strength in the direction parallel to the rolling direction in this invention. The above tensile speed is equivalent to the crosshead displacement speed recorded in the JIS standard. As a tensile testing machine, the AUTO COM AC-100KN-C manufactured by TSE Corporation or an equivalent device can be used. Furthermore, by setting the composition of the copper alloy to the composition of the copper alloy described in this embodiment, the tensile strength in the direction parallel to the rolling direction can be kept within the desired range.

本實施形態之銅合金的導電率可為30%IACS以上。藉由導電率為30%IACS以上,能夠有效地用作電子零件之銅合金零件。 導電率意指與壓延方向平行之方向上的導電率。 又,藉由將銅合金之組成設為上述本實施形態之銅合金之組成,能夠使導電率處於所期望之範圍。 導電率(EC:%IACS)可依據JIS-H0505(1975)藉由四端子法進行測定。測定可使用雙電橋,電阻之測定可基於平均剖面積法來進行。關於導電率,可於室溫(25℃)測定與壓延方向平行之方向上的導電率。再者,就試驗樣品之方便性,標距(電阻測定間距離)可以50 mm進行測定。 The copper alloy of this embodiment has a conductivity of 30% IACS or higher. With a conductivity of 30% IACS or higher, it can be effectively used as a copper alloy component for electronic devices. Conductivity refers to the conductivity in the direction parallel to the rolling direction. Furthermore, by setting the composition of the copper alloy as described above for the copper alloy of this embodiment, the conductivity can be made within the desired range. Conductivity (EC: %IACS) can be measured according to JIS-H0505 (1975) using the four-terminal method. Measurement can be performed using a double bridge, and resistance can be measured based on the average cross-sectional area method. Regarding conductivity, the conductivity in the direction parallel to the rolling direction can be measured at room temperature (25°C). Furthermore, for the convenience of testing samples, the gauge length (distance between resistance measurements) can be measured at 50 mm.

以下,說明銅合金板之製造方法。 本實施形態中,銅合金板並無特別限定,可藉由含有壓延步驟之方法來製造。具體而言,銅合金板例如可對鑄錠依序進行均質化、熱壓延、中間冷壓延、固溶處理、時效處理、精冷壓延、弛力退火而製造。固溶處理前之冷壓延並非必要,可視需要實施。又,亦可於固溶處理後且時效處理前視需要實施冷壓延,亦可分別進行2次以上之固溶處理與時效處理。於進行上述各步驟後,可適當進行用以去除表面之氧化皮的研削、研磨、珠粒噴擊、酸洗等。 The following describes a method for manufacturing a copper alloy plate. In this embodiment, the copper alloy plate is not particularly limited and can be manufactured using a method that includes a rolling step. Specifically, the copper alloy plate can be manufactured by sequentially performing homogenization, hot rolling, intermediate cold rolling, solution treatment, aging treatment, fine cold rolling, and relaxation annealing on an ingot. Cold rolling before solution treatment is not necessary and can be performed as needed. Furthermore, cold rolling can be performed as needed after solution treatment and before aging treatment, or two or more solution treatments and aging treatments can be performed separately. After performing the above steps, appropriate methods such as grinding, polishing, bead blasting, and pickling can be used to remove surface oxide scale.

更詳細地說明可使用本實施形態之銅合金藉由含有壓延步驟之方法來製造的銅合金板之製造方法之例。 銅合金板之製造方法,可含有首先將具有上述期望之組成之銅合金的原料熔解進行鑄造之步驟。該步驟中,藉由與一般之銅合金的熔製方法相同的方法將銅合金之原料熔解後,藉由連續鑄造或半連續鑄造等而製造鑄錠。例如,首先使用大氣熔解爐將電解銅、Ni、Co、Si、Cr等原料熔解,獲得目標組成之熔液。然後,使該熔液流入任意尺寸之鑄模而鑄造成鑄錠。 A more detailed example of a method for manufacturing a copper alloy plate using a method including a rolling step is provided. The method for manufacturing the copper alloy plate may include a step of first melting and casting a raw material of a copper alloy having the desired composition as described above. In this step, the raw material of the copper alloy is melted using a method similar to that used for melting conventional copper alloys, and then an ingot is manufactured by continuous casting or semi-continuous casting. For example, firstly, raw materials such as electrolytic copper, Ni, Co, Si, and Cr are melted using an atmospheric melting furnace to obtain a molten liquid with the desired composition. Then, the molten liquid is poured into a mold of any size to cast an ingot.

本實施形態中,銅合金板之製造方法可含有對任意地進行了均質化退火之鑄錠進行熱壓延的步驟。鑄錠之熱壓延並無特別限定,例如可於500~950℃分成數個道次進行。再者,熱壓延之總加工度較佳設為90%以上。In this embodiment, the method for manufacturing the copper alloy plate may include a step of hot rolling an ingot that has undergone arbitrary homogenization annealing. The hot rolling of the ingot is not particularly limited; for example, it can be performed in several passes at 500–950°C. Furthermore, the overall machining degree of the hot rolling is preferably set to 90% or higher.

固溶處理係使Ni-Si系化合物、Co-Si系化合物、Ni-Co-Si系化合物等矽化物固溶於Cu基體中,同時使Cu基體再結晶之熱處理。固溶之加熱處理溫度並無特別限定,例如可設為650~1000℃。又,加熱處理時間可設為1秒~10分鐘。具體而言,藉由固溶處理溫度或時間為上述範圍之下限值以上,即便銅合金中含有大量Ni-Co-Si系化合物等矽化物,亦可容易地使之充分地固溶於Cu基體中,且能夠使之再結晶。藉由固溶處理溫度或時間為上述範圍之上限值以下,能夠易於抑制再結晶粒之粗大化。 該加熱處理溫度較佳為700~950℃,又,時間較佳為5秒~5分鐘。 Solution treatment is a heat treatment process that dissolves silicides such as Ni-Si, Co-Si, and Ni-Co-Si compounds into a Cu matrix, simultaneously causing recrystallization of the Cu matrix. The heating temperature for solution treatment is not particularly limited; for example, it can be set to 650–1000°C. The heating time can be set to 1 second–10 minutes. Specifically, by setting the solution treatment temperature or time above the lower limit of the above range, even if the copper alloy contains a large amount of Ni-Co-Si compounds, they can be easily and fully dissolved in the Cu matrix, and recrystallization can be achieved. By setting the solution treatment temperature or time below the upper limit of the above range, the coarsening of recrystallized grains can be easily suppressed. The preferred heating temperature is 700–950°C, and the preferred time is 5 seconds to 5 minutes.

本實施形態中,銅合金板之製造方法可含有進行上述固溶處理後之中間物之時效處理的步驟。時效處理之加熱處理溫度並無特別限定,例如可設為375~625℃。又,加熱處理時間可設為0.5~50小時。 藉由時效處理溫度或時間為上述範圍之下限值以上,有Ni-Si系化合物、Co-Si系化合物、Ni-Co-Si系化合物之析出量成為足夠之量,容易獲得足夠之強度的傾向。藉由時效處理溫度或時間為上述範圍之上限值以下,能夠防止發生析出物之粗大化或再固溶,能夠易於充分提高強度或導電率。 為了充分提高銅合金之強度及導電率,提高時效處理後之中間物之與壓延方向平行之方向上的拉伸強度與導電率是重要的。例如,為了使銅合金之拉伸強度為870 MPa以上,可使時效處理後之中間物的拉伸強度為750 MPa以上。為了使銅合金之拉伸強度為930 MPa以上,可使時效處理後之中間物的拉伸強度為830 MPa以上。為了使銅合金之拉伸強度為950 MPa以上,可使時效處理後之中間物的拉伸強度為850 MPa以上。例如,時效處理後之中間物之與壓延方向平行之方向上的導電率可設為40%IACS以上。 為了抑制氧化被膜之產生,時效處理較佳於Ar、N 2、H 2等非活性環境下進行。 In this embodiment, the method for manufacturing the copper alloy plate may include an aging treatment step for the intermediate material after the aforementioned solution treatment. The heating temperature for the aging treatment is not particularly limited, but can be set to, for example, 375–625°C. Furthermore, the heating time can be set to 0.5–50 hours. By setting the aging temperature or time above the lower limit of the above range, the amount of Ni-Si compounds, Co-Si compounds, and Ni-Co-Si compounds precipitated becomes sufficient, making it easier to obtain sufficient strength. By setting the aging temperature or time below the upper limit of the above range, coarsening or re-solution of the precipitates can be prevented, making it easier to sufficiently improve strength or conductivity. To significantly improve the strength and conductivity of copper alloys, it is crucial to enhance the tensile strength and conductivity of the intermediate material after aging treatment in the direction parallel to the rolling direction. For example, to achieve a tensile strength of 870 MPa or higher for the copper alloy, the tensile strength of the intermediate material after aging treatment can be increased to 750 MPa or higher. Similarly, to achieve a tensile strength of 930 MPa or higher for the copper alloy, the tensile strength of the intermediate material after aging treatment can be increased to 830 MPa or higher. For instance, the conductivity of the intermediate material after aging treatment in the direction parallel to the rolling direction can be set to 40% IACS or higher. In order to inhibit the formation of oxide films, aging treatment is better performed in inactive environments such as Ar, N2 , and H2 .

本實施形態中,銅合金板之製造方法可含有進行上述中間物之精冷壓延的步驟。精冷壓延並無特別限定,例如分成數個道次進行。較佳進行1道次以上之壓延。精冷壓延之總加工度較佳為40%以上。藉由精冷壓延對材料賦予加工應變,能夠提高強度。 精冷壓延之加工度的上限值較佳為90%以下。藉由加工度為90%以下,能夠防止因強加工之加工應變而導致導電率降低。 若將用以進行壓延之加工對象的厚度設為TB,將壓延後之加工對象的厚度設為TA,則加工度(%)以加工度(%)=[(TB-TA)/TB]×100表示。 In this embodiment, the manufacturing method of the copper alloy plate may include a step of fine cold rolling of the aforementioned intermediate material. Fine cold rolling is not particularly limited, and can be performed in several passes, for example. Preferably, it involves one or more rolling passes. The total machining percentage of the fine cold rolling is preferably 40% or higher. By imparting work strain to the material through fine cold rolling, the strength can be improved. The upper limit of the machining percentage of the fine cold rolling is preferably 90% or lower. By keeping the machining percentage below 90%, it is possible to prevent a decrease in conductivity due to work strain from intense processing. If the thickness of the workpiece used for rolling is TB, and the thickness of the workpiece after rolling is TA, then the machining percentage (%) is expressed as machining percentage (%) = [(TB - TA) / TB] × 100.

本實施形態中,銅合金板之製造方法可含有進行上述精冷壓延後之中間物之弛力退火的步驟。弛力退火於一般條件下進行即可,例如可於250℃~550℃以保持時間5秒~5小時進行。弛力退火可於大氣中或氮氣或氬氣等非活性環境中進行。又,弛力退火後之銅合金板亦可藉由空氣冷卻進行冷卻。In this embodiment, the method for manufacturing the copper alloy plate may include a step of stress annealing of the intermediate material after the aforementioned fine cold rolling. Stress annealing can be performed under normal conditions, such as at 250°C to 550°C for a holding time of 5 seconds to 5 hours. Stress annealing can be performed in the atmosphere or in an inert environment such as nitrogen or argon. Furthermore, the copper alloy plate after stress annealing can also be cooled by air cooling.

本實施形態中,銅合金板可藉由含有上述步驟之製造方法來製造。再者,該製造方法中,於各壓延步驟或各熱處理步驟後,亦可視需要進行酸洗、研磨、脫脂、面切削(face cutting)、修整。又,該製造方法中,可含有上述以外之壓延步驟或熱處理步驟。In this embodiment, the copper alloy plate can be manufactured by a manufacturing method including the steps described above. Furthermore, in this manufacturing method, pickling, grinding, degreasing, face cutting, and finishing can be performed as needed after each rolling step or heat treatment step. Also, this manufacturing method may include rolling steps or heat treatment steps other than those described above.

[電子零件] 本實施形態之電子零件係含有上述本實施形態之銅合金之電子零件。更詳而言之,本實施形態之電子零件於其內部具有由本實施形態之銅合金經過銅合金板而製造之銅合金零件。作為電子零件,例如可舉半導體封裝體。可由本實施形態之銅合金製造的經微細化之銅合金零件,由於具有抑制於電子零件之製造步驟中之變形的特性,故為了製造具有較多經微細化之結構的半導體封裝體,適宜使用本實施形態之銅合金。 再者,於電子零件為半導體封裝體之情形時,該半導體封裝體並無特別限定,例如可藉由如下方式來製造,即,使用由本實施形態之銅合金製造的銅合金板製造引線框架,繼而,將半導體元件支撐固定於該引線框架上,將半導體元件與引線進行線接合而形成內部配線,然後利用規定之樹脂構件將半導體元件予以密封。如上述,本實施形態之電子零件亦可含有本實施形態之銅合金。 [Electronic Components] The electronic component of this embodiment is an electronic component containing the copper alloy of this embodiment described above. More specifically, the electronic component of this embodiment has a copper alloy component internally manufactured from the copper alloy of this embodiment via a copper alloy plate. As an electronic component, it can be used as, for example, a semiconductor package. The miniaturized copper alloy component, which can be manufactured from the copper alloy of this embodiment, has the characteristic of suppressing deformation during the manufacturing process of the electronic component. Therefore, the copper alloy of this embodiment is suitable for manufacturing semiconductor packages with more miniaturized structures. Furthermore, when the electronic component is a semiconductor package, the semiconductor package is not particularly limited. For example, it can be manufactured by using a copper alloy plate made of the copper alloy of this embodiment to create a lead frame; then, supporting and fixing the semiconductor element to the lead frame; wire bonding the semiconductor element and leads to form internal wiring; and finally, sealing the semiconductor element with a specified resin component. As described above, the electronic component of this embodiment may also contain the copper alloy of this embodiment.

以上,雖說明了本發明之實施形態,但本發明之銅合金及電子零件並不限定於上述例,可適當施加變更。The above describes the embodiments of the present invention, but the copper alloys and electronic components of the present invention are not limited to the examples described above, and appropriate modifications may be made.

(本發明之態樣) 本發明之第1態樣係一種銅合金,其含有2.3~4.6質量%之Ni、0.10~0.50質量%之Co、0.60~1.3質量%之Si、0.010~0.10質量%之Cr,剩餘部分由Cu及不可避免之雜質構成。 (State of the Invention) The first state of the invention is a copper alloy containing 2.3–4.6% by mass Ni, 0.10–0.50% by mass Co, 0.60–1.3% by mass Si, and 0.010–0.10% by mass Cr, with the remainder consisting of Cu and unavoidable impurities.

本發明之第2態樣係如第1態樣所記載之銅合金,其含有未達0.50質量%之Co。The second state of the present invention is a copper alloy as described in the first state, which contains less than 0.50% by mass of Co.

本發明之第3態樣係如第1態樣或第2態樣所記載之銅合金,其含有0.10~0.40質量%之Co。The third state of the present invention is a copper alloy as described in the first or second state, containing 0.10 to 0.40% by mass of Co.

本發明之第4態樣係如第1態樣至第3態樣中任一項所記載之銅合金,其含有0.20~0.30質量%之Co。The fourth state of the present invention is a copper alloy as described in any one of the first to third states, containing 0.20 to 0.30% by mass of Co.

本發明之第5態樣係如第1態樣至第4態樣中任一項所記載之銅合金,其含有0.020~0.070質量%之Cr。The fifth state of the present invention is a copper alloy as described in any one of states 1 to 4, containing 0.020 to 0.070% by mass of Cr.

本發明之第6態樣係如第1態樣至第5態樣中任一項所記載之銅合金,其含有3.0~4.0質量%之Ni。The sixth state of the present invention is a copper alloy as described in any one of the states 1 to 5, containing 3.0 to 4.0% by mass of Ni.

本發明之第7態樣係如第1態樣至第6態樣中任一項所記載之銅合金,其中,Ni及Co之合計相對於Si之質量之比R A為3.5~5.0。 The seventh state of the present invention is a copper alloy as described in any one of the first to sixth states, wherein the mass ratio of the total mass of Ni and Co to Si, RA, is 3.5 to 5.0.

本發明之第8態樣係如第7態樣所記載之銅合金,其中,該比R A為3.5~4.5。 The eighth aspect of the present invention is a copper alloy as described in the seventh aspect, wherein the ratio RA is 3.5 to 4.5.

本發明之第9態樣係如第1態樣至第8態樣中任一項所記載之銅合金,其中,Co相對於Ni之質量之比R B為0.010~0.155。 The ninth state of the present invention is a copper alloy as described in any one of states 1 to 8, wherein the mass ratio of Co to Ni, RB, is 0.010 to 0.155.

本發明之第10態樣係如第9態樣所記載之銅合金,其中,該比R B為0.025~0.155。 The 10th aspect of this invention is a copper alloy as described in the 9th aspect, wherein the ratio RB is 0.025 to 0.155.

本發明之第11態樣係如第9態樣所記載之銅合金,其中,該比R B為0.056~0.086。 The 11th aspect of this invention is a copper alloy as described in the 9th aspect, wherein the ratio RB is 0.056 to 0.086.

本發明之第12態樣係如第1態樣至第11態樣中任一項所記載之銅合金,其進而含有合計0.010~1.0質量%之選自由Mg、Fe、P、Cr、Ag、Zn、Sn、Pb、Zr、Al、As、Se、Te、Sb、Bi、Au、Ti、Nb、V、Ta、W、Mo及Mn所組成之群中的一種以上元素。The 12th state of the present invention is a copper alloy as described in any one of states 1 to 11, further containing a total of 0.010 to 1.0% by mass of one or more elements selected from the group consisting of Mg, Fe, P, Cr, Ag, Zn, Sn, Pb, Zr, Al, As, Se, Te, Sb, Bi, Au, Ti, Nb, V, Ta, W, Mo and Mn.

本發明之第13態樣係如第1態樣至第12態樣中任一項所記載之銅合金,其導電率為30%IACS以上。The 13th state of the present invention is a copper alloy as described in any of the 1st to 12th states, having a conductivity of 30% IACS or higher.

本發明之第14態樣係如第1態樣至第13態樣中任一項所記載之銅合金,其在與壓延方向平行之方向上的拉伸強度為870 MPa以上。The 14th property of the present invention is a copper alloy as described in any one of the 1st to 13th properties, having a tensile strength of 870 MPa or more in a direction parallel to the rolling direction.

本發明之第15態樣係如第1態樣至第14態樣中任一項所記載之銅合金,其在與壓延方向平行之方向上的拉伸強度為930 MPa以上。The 15th property of the present invention is a copper alloy as described in any of the 1st to 14th properties, having a tensile strength of 930 MPa or more in a direction parallel to the rolling direction.

本發明之第16態樣係一種電子零件,其含有第1態樣至第15態樣中任一項所記載之銅合金。 [實施例] The 16th aspect of this invention is an electronic component comprising a copper alloy as described in any one of aspects 1 through 15. [Example]

以下,藉由實施例進而詳細地說明本發明,但本發明並不受下述實施例任何限定。 實施例1中,以如下方式由所期望之銅合金製作銅合金板。 以電解銅作為原料,使用大氣熔解爐將表1所示之組成的銅合金進行熔製、鑄造。於950℃對該鑄錠進行熱壓延直至板厚成為10.0 mm。熱壓延後,進行面切削,繼而進行中間冷壓延直至板厚成為0.167 mm。然後,於表1所示之條件下分別進行固溶處理、時效處理。 其次,以表1所示之加工度進行精冷壓延直至板厚成為0.1 mm,獲得銅合金板。 又,於實施例2中,將實施例1之進行了精冷壓延之銅合金板進而於表2所示之條件下在大氣中進行弛力退火。藉由空氣冷卻對弛力退火後之銅合金板進行冷卻,藉此獲得實施例2之銅合金板。 The present invention will now be described in detail by way of embodiments, but the present invention is not limited to any of the embodiments described below. In Embodiment 1, a copper alloy plate is manufactured from a desired copper alloy in the following manner: Electrolytic copper is used as raw material, and the copper alloy with the composition shown in Table 1 is melted and cast using an atmospheric melting furnace. The ingot is hot-rolled at 950°C until the plate thickness is 10.0 mm. After hot rolling, face cutting is performed, followed by intermediate cold rolling until the plate thickness is 0.167 mm. Then, solution treatment and aging treatment are performed under the conditions shown in Table 1, respectively. Next, fine cold rolling is performed with the machining degree shown in Table 1 until the plate thickness is 0.1 mm to obtain the copper alloy plate. Furthermore, in Embodiment 2, the copper alloy sheet of Embodiment 1, which underwent precision cold rolling, was then subjected to stress annealing in the atmosphere under the conditions shown in Table 2. The copper alloy sheet after stress annealing was cooled by air cooling, thereby obtaining the copper alloy sheet of Embodiment 2.

於比較例1、2中,除變更為表1所示之銅合金的組成或固溶處理條件以外,以與實施例1相同之方式製造銅合金板。具體而言,於比較例1中,變更為表1所示之銅合金的組成,作為固溶處理溫度,變更為表1所示之900℃或925℃的溫度條件,除此以外,藉由與實施例1相同之製造方法製造作為銅合金板之2個樣品。然後,比較例1之銅合金的各評價,係以2個樣品之評價結果的數值(如表1所示,關於時效處理後之中間物或精冷壓延後之銅合金板的拉伸強度或導電率)為縱軸,且以固溶處理溫度為橫軸進行繪圖,計算並確定連結該繪圖之直線,繼而,將固溶處理溫度915℃之值代入表示該直線之數式,藉此獲得以915℃進行固溶處理而製造之情形時的銅合金及其中間物之推算之各評價結果。 又,於比較例2中,與比較例1同樣地,變更為表1所示之銅合金的組成,作為固溶處理溫度,變更為表1所示之910℃、935℃、950℃之溫度條件,除此以外,藉由與實施例1相同之製造方法製造作為銅合金板之3個樣品。然後,比較例2之銅合金的各評價,係以3個樣品之評價結果的數值為縱軸,且以固溶處理溫度為橫軸進行繪圖,計算並確定連結該繪圖之近似直線(利用Microsoft Excel(註冊商標)之近似直線功能),繼而,將固溶處理溫度915℃之值代入表示該近似直線之數式,藉此獲得以915℃進行固溶處理而製造之情形時的銅合金及其中間物之推算之各評價結果。 In Comparative Examples 1 and 2, the copper alloy plates were manufactured in the same manner as in Example 1, except that the composition of the copper alloy or the solution treatment conditions were changed to those shown in Table 1. Specifically, in Comparative Example 1, the composition of the copper alloy was changed to that shown in Table 1, and the solution treatment temperature was changed to 900°C or 925°C as shown in Table 1. Otherwise, two samples as copper alloy plates were manufactured using the same manufacturing method as in Example 1. Then, the evaluations of the copper alloy in Comparative Example 1 were plotted with the numerical values of the evaluation results of the two samples (as shown in Table 1, regarding the tensile strength or conductivity of the copper alloy sheet after aging treatment or fine cold rolling) on the vertical axis and the solution treatment temperature on the horizontal axis. The straight line connecting the plot was calculated and determined. Then, the value of the solution treatment temperature of 915°C was substituted into the formula representing the straight line, thereby obtaining the estimated evaluation results of the copper alloy and its intermediates when solution treatment was performed at 915°C. Furthermore, in Comparative Example 2, similar to Comparative Example 1, the composition of the copper alloy was changed to that shown in Table 1, and the solution treatment temperatures were changed to 910°C, 935°C, and 950°C as shown in Table 1. Apart from this, three samples as copper alloy plates were manufactured using the same manufacturing method as in Example 1. Then, the evaluations of the copper alloy in Comparative Example 2 were plotted with the evaluation results of the three samples on the vertical axis and the solution treatment temperature on the horizontal axis. An approximate straight line connecting the plot was calculated and determined (using the approximate straight line function of Microsoft Excel). Then, the value of the solution treatment temperature of 915°C was substituted into the formula representing the approximate straight line, thereby obtaining the estimated evaluation results of the copper alloy and its intermediates when solution treatment was performed at 915°C.

所獲得之實施例1、2的銅合金板及比較例1、2的銅合金板進行了如下測定。將其結果示於表1、2。 [組成] 所獲得之銅合金的組成係藉由螢光X射線分析進行確認。作為螢光X射線分析裝置,使用理學公司製造之Simultix14。分析面係使用以表面最大粗糙度Rz(JIS-B0601(2013))成為6.3 μm以下之方式進行了切削或機械研磨者。螢光X射線分析係基於JIS K 0119:2008進行,以波長色散方式進行測定。 The copper alloy plates of Examples 1 and 2 and Comparative Examples 1 and 2 were subjected to the following measurements. The results are shown in Tables 1 and 2. [Composition] The composition of the obtained copper alloys was confirmed by fluorescent X-ray analysis. A Rigaku Simultix14 fluorescent X-ray analysis apparatus was used. The analysis surface was machined or mechanically ground to achieve a maximum surface roughness Rz (JIS-B0601 (2013)) of 6.3 μm or less. The fluorescent X-ray analysis was performed based on JIS K 0119:2008, using wavelength dispersion.

[拉伸強度(TS)] 針對所獲得之銅合金板,依據JIS-Z2241(2011),藉由拉伸試驗機,於與壓延方向平行之方向上測定拉伸強度(TS)。 具體而言,以拉伸方向成為與壓延方向平行之方向的方式,使用壓製機由各試樣製作JIS13B號試驗片。關於拉伸試驗之條件,將試驗片寬度設為12.5 mm,將測定溫度設為室溫(15~35℃),將拉伸速度(十字頭位移速度)設為5 mm/min,將標距(gauge length)設為50 mm。以2個試驗片進行試驗,將2個數據之平均值示於表1、2。 [Tensive Strength (TS)] The tensile strength (TS) of the obtained copper alloy plates was measured using a tensile testing machine in a direction parallel to the rolling direction, according to JIS-Z2241 (2011). Specifically, JIS 13B test pieces were prepared from each sample using a pressing machine with the stretching direction parallel to the rolling direction. Regarding the tensile test conditions, the test piece width was set to 12.5 mm, the measurement temperature was set to room temperature (15–35°C), the tensile speed (crosshead displacement speed) was set to 5 mm/min, and the gauge length was set to 50 mm. Two test pieces were used for the test, and the average values of the two data points are shown in Tables 1 and 2.

[導電率] 導電率(EC:%IACS)係依據JIS-H0505(1975)藉由四端子法進行測定。測定係使用雙電橋,電阻之測定係基於平均剖面積法來進行。關於導電率,係於室溫(25℃)測定與壓延方向平行之方向上的導電率。再者,標距(電阻測定間距離)係以50 mm進行測定。 [Conductivity] Conductivity (EC: %IACS) is measured according to JIS-H0505 (1975) using the four-terminal method. The measurement uses a double bridge, and resistance is measured based on the average cross-sectional area method. Conductivity is measured at room temperature (25°C) in the direction parallel to the rolling direction. Furthermore, the gauge length (distance between resistance measurements) is measured at 50 mm.

[表1] 組成(質量%) 質量比R A(Ni+Co)/ Si 質量比R BCo/Ni 步驟 時效處理後 中間物之特性 精冷壓延後 銅合金板之特性 Ni Co Si Cr Cu 固溶 處理 時效 處理 精冷 壓延 拉伸強度 (MPa) 導電率 (%IACS) 拉伸強度 (MPa) 導電率 (%IACS) 實施例1 3.55 0.25 0.87 0.05 剩餘 部分 4.37 0.07 915℃ 、1分鐘 375~625℃ 0.5~50小時 加工度40% 856 40.3 958 40.1 比較例1 3.17 0.63 0.87 0.05 剩餘 部分 4.37 0.20 900℃或925℃ 、1分鐘 852 41.2 919 40.1 比較例2 2.80 1.00 0.87 0.05 剩餘 部分 4.37 0.36 910℃、935℃或950℃ 、1分鐘 832 42.2 911 41.1 [Table 1] Composition (mass %) Mass ratio R<sub>A</sub> (Ni+Co)/Si Mass ratio R B Co/Ni Steps Characteristics of intermediates after aging treatment Characteristics of copper alloy plates after precision cold rolling Ni Co Si Cr Cu Solution treatment Timeliness processing Precision cold rolling Tensile strength (MPa) Conductivity (%IACS) Tensile strength (MPa) Conductivity (%IACS) Implementation Example 1 3.55 0.25 0.87 0.05 The remaining part 4.37 0.07 915℃, 1 minute 375~625℃ 0.5~50 hours Processing degree 40% 856 40.3 958 40.1 Comparative example 1 3.17 0.63 0.87 0.05 The remaining part 4.37 0.20 900℃ or 925℃, 1 minute 852 41.2 919 40.1 Comparative example 2 2.80 1.00 0.87 0.05 The remaining part 4.37 0.36 910℃, 935℃ or 950℃, 1 minute 832 42.2 911 41.1

[表2] 組成(質量%) 質量比R A(Ni+Co)/Si 質量比R BCo/Ni 步驟 時效處理後 中間物之特性 銅合金板之特性 Ni Co Si Cr Cu 固溶 處理 時效 處理 精冷 壓延 弛力 退火 拉伸強度 (MPa) 導電率 (%IACS) 拉伸強度 (MPa) 導電率 (%IACS) 實施例 2 3.55 0.25 0.87 0.05 剩餘 部分 4.37 0.07 915℃ 1分鐘 375~625℃ 0.5~50小時 加工度 40% 300℃ 3小時 856 40.3 975 41.0 [Table 2] Composition (mass %) Mass ratio R<sub>A</sub> (Ni+Co)/Si Mass ratio RB Co/Ni Steps Characteristics of intermediates after aging treatment Characteristics of copper alloy plates Ni Co Si Cr Cu Solution treatment Timeliness processing Precision cold rolling Relaxation annealing Tensile strength (MPa) Conductivity (%IACS) Tensile strength (MPa) Conductivity (%IACS) Implementation Example 2 3.55 0.25 0.87 0.05 The remaining part 4.37 0.07 915℃ for 1 minute 375~625℃ 0.5~50 hours Processing degree 40% 300℃ for 3 hours 856 40.3 975 41.0

如表1、2所示,可知藉由以期望之組成來製造,而具備高導電率,且同時拉伸強度提高。因此,由實施例1、2之銅合金製造之電子零件用的經微細化之銅合金零件,能夠抑制於電子零件之製造步驟中的變形。 將實施例1及比較例1、比較例2之銅合金的特性(拉伸強度及導電率)相對於Co量(質量%)進行繪圖,將描繪出線性近似曲線之結果示於圖1。隨著Co量增加,產生Co-Si系析出物或Ni-Co-Si系析出物,因此認為導電率提高。因此,由實施例中所獲得之實驗值製作線性近似曲線,預測各Co量下之導電率。根據該結果,可知若Co量為0.10質量%以上,能夠實現39.7%IACS以上之導電率。可知若Co量為0.20質量%以上,能夠實現39.8%IACS以上之導電率。可知若Co量為0.25質量%以上,則能夠實現40.1%IACS以上之導電率。 將實施例1及比較例1、比較例2之銅合金的特性(拉伸強度及導電率)相對於Co與Ni之質量之比R B(Co/Ni(質量比))進行繪圖,將描繪出線性近似曲線之結果示於圖2。隨著R B增加,產生Co-Si系析出物或Ni-Co-Si系析出物,因此認為容易獲得導電率且難以獲得強度。因此,由實施例中所獲得之實驗值製作線性近似曲線,預測各R B下之強度及導電率。根據該結果,可知若比R B為0.010以上,能夠實現39.7%IACS以上之導電率。可知若比R B為0.025以上,能夠實現39.7%IACS以上之導電率。可知若比R B為0.056以上,能夠實現39.8%IACS以上之導電率。又,可知若比R B為0.155以下,能夠實現938 MPa以上之拉伸強度。可知若比R B為0.086以下,則能夠實現949 MPa以上之拉伸強度。 [產業上之可利用性] As shown in Tables 1 and 2, it can be seen that by manufacturing with the desired composition, high conductivity is achieved while tensile strength is simultaneously increased. Therefore, the miniaturized copper alloy parts for electronic components manufactured from the copper alloys of Examples 1 and 2 can suppress deformation during the manufacturing process of electronic components. The characteristics (tensile strength and conductivity) of the copper alloys of Example 1, Comparative Examples 1 and 2 are plotted against the Co content (mass%), and the results of plotting a linear approximate curve are shown in Figure 1. As the Co content increases, Co-Si precipitates or Ni-Co-Si precipitates are generated, thus the conductivity is considered to increase. Therefore, a linear approximate curve is plotted from the experimental values obtained in the examples to predict the conductivity at various Co contents. Based on these results, it can be seen that if the Co content is 0.10% by mass or more, a conductivity of 39.7% IACS or higher can be achieved. It can be seen that if the Co content is 0.20% by mass or more, a conductivity of 39.8% IACS or higher can be achieved. It can be seen that if the Co content is 0.25% by mass or more, a conductivity of 40.1% IACS or higher can be achieved. The properties (tensile strength and conductivity) of the copper alloys of Example 1, Comparative Examples 1 and 2 are plotted relative to the Co/Ni mass ratio RB (Co/Ni (mass ratio)). The result of plotting a linear approximate curve is shown in Figure 2. With increasing RB , Co-Si or Ni-Co-Si precipitates are formed; therefore, it is considered that conductivity is easily obtained but strength is difficult to obtain. Therefore, a linear approximate curve was constructed from the experimental values obtained in the embodiment to predict the strength and conductivity at each R<sub> B </sub>. According to the results, it can be seen that if the R<sub>B</sub> is 0.010 or higher, a conductivity of 39.7% IACS or higher can be achieved. It can be seen that if the R<sub> B </sub> is 0.025 or higher, a conductivity of 39.7% IACS or higher can be achieved. It can be seen that if the R<sub> B </sub> is 0.056 or higher, a conductivity of 39.8% IACS or higher can be achieved. Furthermore, it can be seen that if the R<sub>B</sub> is 0.155 or lower, a tensile strength of 938 MPa or higher can be achieved. It can be seen that if the R<sub> B </sub> is 0.086 or lower, a tensile strength of 949 MPa or higher can be achieved. [Industrial Applicability]

若根據本發明,可提供一種具有高導電率及高強度之銅合金及含有其之電子零件。According to the present invention, a copper alloy with high conductivity and high strength and electronic components containing the same can be provided.

without

[圖1]係關於實施例1及比較例1、2之銅合金,相對於Co量(質量%),對其等之特性進行繪圖,描繪出線性近似曲線之圖表。第1軸表示拉伸強度,第2軸表示導電率。又,方形之繪圖表示拉伸強度,圓之繪圖表示導電率。 [圖2]係關於實施例1及比較例1、2之銅合金,相對於Co與Ni之質量之比R B,對其等之特性進行繪圖,描繪出線性近似曲線之圖表。第1軸表示拉伸強度,第2軸表示導電率。又,方形之繪圖表示拉伸強度,圓之繪圖表示導電率。 [Figure 1] is a graph plotting the properties of the copper alloys of Embodiment 1 and Comparative Examples 1 and 2 relative to the Co content (mass %), depicting a linear approximate curve. The first axis represents tensile strength, and the second axis represents conductivity. Squares represent tensile strength, and circles represent conductivity. [Figure 2] is a graph plotting the properties of the copper alloys of Embodiment 1 and Comparative Examples 1 and 2 relative to the Co to Ni mass ratio RB , depicting a linear approximate curve. The first axis represents tensile strength, and the second axis represents conductivity. Squares represent tensile strength, and circles represent conductivity.

Claims (15)

一種銅合金,其含有2.3~4.6質量%之Ni、0.10~0.50質量%之Co、0.60~1.3質量%之Si、0.010~0.10質量%之Cr,剩餘部分由Cu及不可避免之雜質構成, 該銅合金在與壓延方向平行之方向上的拉伸強度為870 MPa以上。A copper alloy containing 2.3 to 4.6% by mass of Ni, 0.10 to 0.50% by mass of Co, 0.60 to 1.3% by mass of Si, and 0.010 to 0.10% by mass of Cr, with the remainder consisting of Cu and unavoidable impurities, has a tensile strength of 870 MPa or more in a direction parallel to the rolling direction. 如請求項1之銅合金,其含有未達0.50質量%之Co。For example, the copper alloy in claim 1 contains less than 0.50% by mass of Co. 如請求項2之銅合金,其含有0.10~0.40質量%之Co。For example, the copper alloy in claim 2 contains 0.10 to 0.40% by mass of Co. 如請求項3之銅合金,其含有0.20~0.30質量%之Co。For example, the copper alloy in claim 3 contains 0.20 to 0.30% by mass of Co. 如請求項1至4中任一項之銅合金,其含有0.020~0.070質量%之Cr。The copper alloy of any of the claims 1 to 4 contains 0.020 to 0.070% by mass of Cr. 如請求項1至4中任一項之銅合金,其含有3.0~4.0質量%之Ni。The copper alloy of any one of claims 1 to 4 contains 3.0 to 4.0% by mass of Ni. 如請求項1至4中任一項之銅合金,其中,Ni及Co之合計相對於Si之質量之比RA為3.5~5.0。For any of the copper alloys in claims 1 to 4, the mass ratio of the total amount of Ni and Co to Si, RA, is 3.5 to 5.0. 如請求項7之銅合金,其中,該比RA為3.5~4.5。For example, the copper alloy in claim 7, wherein the ratio RA is 3.5 to 4.5. 如請求項1至4中任一項之銅合金,其中,Co相對於Ni之質量之比RB為0.010~0.155。For example, in any of the copper alloys in claims 1 to 4, the mass ratio of Co to Ni, RB, is 0.010 to 0.155. 如請求項9之銅合金,其中,該比RB為0.025~0.155。For example, in the copper alloy of claim 9, the ratio RB is 0.025 to 0.155. 如請求項9之銅合金,其中,該比RB為0.056~0.086。For example, in the copper alloy of claim 9, the ratio RB is 0.056 to 0.086. 如請求項1至4中任一項之銅合金,其進而含有合計0.010~1.0質量%之選自由Mg、Fe、P、Cr、Ag、Zn、Sn、Pb、Zr、Al、As、Se、Te、Sb、Bi、Au、Ti、Nb、V、Ta、W、Mo及Mn所組成之群中的一種以上元素。The copper alloy of any one of claims 1 to 4 further contains a total of 0.010 to 1.0% by mass of one or more elements selected from the group consisting of Mg, Fe, P, Cr, Ag, Zn, Sn, Pb, Zr, Al, As, Se, Te, Sb, Bi, Au, Ti, Nb, V, Ta, W, Mo and Mn. 如請求項1至4中任一項之銅合金,其導電率為30%IACS以上。For example, the copper alloys in any of the requests 1 to 4 have a conductivity of 30% IACS or higher. 如請求項1至4中任一項之銅合金,其在與壓延方向平行之方向上的拉伸強度為930 MPa以上。The copper alloy of any of the claims 1 to 4 has a tensile strength of 930 MPa or more in the direction parallel to the rolling direction. 一種電子零件,其含有請求項1至14中任一項之銅合金。An electronic component comprising a copper alloy of any one of claims 1 to 14.
TW113129397A 2023-12-07 2024-08-06 Copper alloys and electronic components TWI911835B (en)

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TW200946697A (en) 2008-03-31 2009-11-16 Nippon Mining Co Cu-ni-si-co-cr alloy for electronic material

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200946697A (en) 2008-03-31 2009-11-16 Nippon Mining Co Cu-ni-si-co-cr alloy for electronic material

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