TWI909771B - Photoelectric device module and operation method thereof - Google Patents

Abstract

The present disclosure provides a photoelectric device module including a substrate, a first reflective layer, a photoelectric conversion layer, and a second reflective layer. The first reflective layer is disposed on the substrate, in which the first reflective layer has a first reflectivity. The photoelectric conversion layer is disposed on the first reflective layer and has a thickness greater than or equal to 135 nm. The second reflective layer is disposed on the photoelectric conversion layer, in which the second reflective layer has a second reflectivity, and the first reflectivity is greater than the second reflectivity.

Description

Optoelectronic Component Modules and Their Operation Methods

This disclosure pertains to an optoelectronic component module and its operation method.

To improve the performance of photosensors or image sensors (e.g., high photoelectric conversion efficiency, high brightness, high sensitivity, wide emission wavelength range and/or wide sensing wavelength range) and reduce their cost, many new materials, such as organic semiconductors, have been developed for application.

The advantage of using organic semiconductors as photoelectric conversion materials lies in their wider spectral response range compared to traditional silicon. Furthermore, some organic semiconductors possess smaller optical band gaps, enabling them to respond to short-wave infrared (SWIR) light with wavelengths greater than or equal to 1000 nm. However, organic semiconductors have lower absorption coefficients; therefore, the external quantum efficiency (EQE) of photosensors or image sensors using organic semiconductors as the photoelectric conversion layer is typically lower.

This disclosure provides an optoelectronic component module, comprising a substrate, a first reflective layer, a photoelectric conversion layer, and a second reflective layer. The first reflective layer is disposed on the substrate, wherein the first reflective layer has a first reflectivity. The photoelectric conversion layer is disposed on the first reflective layer and has a thickness greater than or equal to 135 nm. The second reflective layer is disposed on the photoelectric conversion layer, wherein the second reflective layer has a second reflectivity, and the first reflectivity is greater than the second reflectivity.

In some embodiments, the thickness of the photoelectric conversion layer is 135 nm to 500 nm.

In some embodiments, the first reflective layer has a first reflectivity of ≥50%, and the second reflective layer has a second reflectivity of ≥5%.

In some embodiments, the optoelectronic module further includes a carrier transport layer disposed between the first reflective layer and the photoelectric conversion layer or between the photoelectric conversion layer and the second reflective layer.

In some implementations, the thickness of the carrier transport layer is 10 nm to 100 nm.

In some embodiments, the thickness of the first reflective layer is greater than or equal to 50 nm.

In some embodiments, the first reflective layer includes silver (Ag), aluminum (Al), copper (Cu), gold (Au), titanium (Ti), tungsten (W), molybdenum (Mo), titanium nitride (TiN), or combinations thereof.

In some embodiments, the thickness of the second reflective layer is 50 nm to 300 nm.

In some embodiments, the second reflective layer includes a transparent conductive oxide (TCO), a transparent conductive polymer, silver nanowires, a metal-containing layer with a thickness of less than or equal to 15 nm, or a combination thereof.

In some embodiments, the photoelectric conversion layer has an optical bandgap of less than or equal to 1.24 eV.

This disclosure provides a method for operating an optoelectronic element module, which includes receiving light through the optoelectronic element module of any of the foregoing embodiments, wherein the upper surface of the second reflective layer is the light-receiving surface.

The following embodiments are described and disclosed in detail with reference to the accompanying drawings. For clarity, many practical details will be explained in the following description. However, it should be understood that these practical details are not intended to limit the scope of this disclosure. That is, these practical details are not essential in the embodiments described herein. Furthermore, for the sake of simplicity, some known structures and elements will be shown schematically in the drawings.

It should be understood that while the terms first, second, third, etc., may be used herein to describe various elements, components, regions, layers, and/or blocks, these elements, components, regions, layers, and/or blocks should not be limited by these terms. These terms are used only to distinguish a single element, component, region, layer, or block from another element, component, region, layer, or block. Therefore, the first element, component, region, layer, or block referred to below may also be referred to as the second element, component, region, layer, or block without departing from the teachings of this disclosure.

This disclosure provides an optoelectronic device module. Figure 1 is a schematic cross-sectional view of an optoelectronic device module 100 according to various embodiments of this disclosure. As shown in Figure 1, the optoelectronic device module 100 includes a substrate 110, a first reflective layer 120, a first carrier transport layer 130, a photoelectric conversion layer 140, a second carrier transport layer 150, and a second reflective layer 160. The first reflective layer 120 is disposed on the substrate 110, wherein the first reflective layer 120 has a first reflectivity. The first carrier transport layer 130 is disposed on the first reflective layer 120. The photoelectric conversion layer 140 is disposed on the first carrier transport layer 130 and has a thickness T4 greater than or equal to 135 nm. The second carrier transport layer 150 is disposed on the photoelectric conversion layer 140. A second reflective layer 160 is disposed on the second carrier transport layer 150, wherein the second reflective layer 160 has a second reflectivity, and the first reflectivity is greater than the second reflectivity. In some embodiments, the first reflective layer 120 has a first reflectivity greater than or equal to 50%, such as 50, 55, 60, 65, 70, 75, 80, 85, 90, or 95%. In some embodiments, the first reflective layer 120 has a first reflectivity greater than or equal to 50% for light with wavelengths from 600 to 2600 nm. The higher the first reflectivity, the more light can be reflected by the first reflective layer 120 into the photoelectric conversion layer 140. In some embodiments, the second reflective layer 160 has a second reflectivity greater than or equal to 5%, for example, the second reflectivity may be greater than or equal to 5%, 10, 15, 20, 25, or 30%. Furthermore, the second reflectivity can be less than or equal to 50% to ensure that the optoelectronic module 100 can still receive sufficient light for photoelectric conversion. In some embodiments, the optoelectronic module 100 further includes external conductors or circuit structures (not shown) for reading or collecting signals and currents generated by the photoelectric conversion layer 140. For example, the external conductors and/or circuit structures are disposed in the substrate 110. The optoelectronic module 100 can serve as a photosensitive element or an image sensing element.

This disclosure provides a method for operating an optoelectronic module 100, which includes receiving light L1 through the optoelectronic module 100, wherein the upper surface of the second reflective layer 160 is a light-receiving surface. Since the optoelectronic module 100 can receive light L1 from above, it serves as a top-illuminated device. After light L1 enters the optoelectronic module 100 from above, because the first reflectivity of the first reflective layer 120 is greater than the second reflectivity of the second reflective layer 160, light L1 is easily reflected by the first reflective layer 120 and re-enters the photoelectric conversion layer 140. This facilitates the photoelectric conversion layer 140 in re-absorbing light L1, thereby improving the external quantum efficiency (EQE) of the optoelectronic module 100. More specifically, the optoelectronic module 100 has a micro-cavity, which is the space between the upper surface of the first reflective layer 120 and the lower surface of the second reflective layer 160. Therefore, light L1 is reflected between the first reflective layer 120 and the second reflective layer 160, which act like two mirrors. The micro-cavity effect increases the light absorption of the photoelectric conversion layer 140, thereby improving the EQE and photocurrent of the optoelectronic module 100. It is worth noting that the micro-cavity effect is affected by the thickness of the film layer between the first reflective layer 120 and the second reflective layer 160. By adjusting the thickness T4 of the photoelectric conversion layer 140, the thickness T2 of the first carrier transport layer 130, and the thickness T3 of the second carrier transport layer 150, the resonant cavity effect can be further optimized, thereby improving the light absorption capability of the photoelectric conversion layer 140. The first carrier transport layer 130 can act as an optical spacer, appropriately adjusting the light field and effectively distributing photons into the photoelectric conversion layer 140, so that the reflected light energy can be absorbed and utilized again by the photoelectric conversion layer 140, thereby improving the EQE and photocurrent of the optoelectronic device module 100. The wavelength range of the photoelectric response can be controlled by adjusting the optical-electrical field distribution to meet the needs of different products and applications. When the photoelectric conversion layer 140 contains materials that respond to short-wave infrared (SWIR) light, the photoelectric element module 100 can be applied in the field of SWIR sensors. Although the absorption coefficient of these materials is usually low, the photoelectric element module 100 can still improve the light absorption of the photoelectric conversion layer 140 through the resonant cavity effect. When the thickness T4 of the photoelectric conversion layer 140 is small, the light absorption of the photoelectric conversion layer 140 can be improved by providing a resonant cavity effect through the first reflective layer 120.

In some embodiments, the substrate 110 comprises glass, ceramic, silicon, plastic, polymer, or combinations thereof. In some embodiments, the substrate 110 is opaque. In some embodiments, the thickness T1 of the first reflective layer 120 is greater than or equal to 50 nm. For example, the thickness T1 is from 50 nm to 500 nm, such as 50, 100, 150, 200, 250, 300, 350, 400, 450, or 500 nm. The thickness T1 of the first reflective layer 120 does not affect the photoelectric conversion efficiency and can therefore be adjusted according to design requirements. In some embodiments, the first reflective layer 120 is a conductive layer, such as comprising silver, aluminum, copper, gold, titanium, tungsten, molybdenum, titanium nitride, or combinations thereof. If a silver layer is used as the first reflective layer 120, when light L1 with a wavelength greater than 600 nm enters the silver layer from the first carrier transport layer 130, near total internal reflection will occur, thereby increasing the absorbance of the photoelectric conversion layer 140. The wavelength of light L1 is, for example, 600 nm to 2600 nm.

Please continue referring to Figure 1. In some embodiments, the thickness T2 of the first carrier transport layer 130 and the thickness T3 of the second carrier transport layer 150 are each from 10 nm to 100 nm, for example, 10, 20, 30, 40, 50, 60, 70, 80, 90, or 100 nm. The first carrier transport layer 130 has carrier transport capability and can act as an optical gapper to appropriately adjust the optical field and effectively distribute photons into the photoelectric conversion layer 140, so that the reflected light energy can be absorbed and utilized again by the photoelectric conversion layer 140, thereby improving the EQE and photocurrent of the optoelectronic device module 100. As the thickness T2 of the first carrier transport layer 130 increases, the EQE of the optoelectronic device module 100 also increases accordingly.

Please continue referring to Figure 1. The first carrier transport layer 130 and the second carrier transport layer 150 are made of different materials. In some embodiments, one of the first carrier transport layer 130 and the second carrier transport layer 150 is an electron transport layer and the other is a hole transport layer. For example, the first carrier transport layer 130 is an electron transport layer and the second carrier transport layer 150 is a hole transport layer. For example, the first carrier transport layer 130 is a hole transport layer and the second carrier transport layer 150 is an electron transport layer. In some embodiments, the first carrier transport layer 130 and the second carrier transport layer 150 each comprise a metal oxide or an organic material (e.g., small organic molecules, polymers, or crosslinkable molecules). In some embodiments, the electron transport layer includes alumina (e.g., zinc oxide, ZnO), titanium oxide (e.g., titanium dioxide), tin oxide (e.g., tin dioxide), polyelectrolyte, 4,7-diphenyl-1,10-phenanthroline (BPhen), or combinations thereof. In some embodiments, the hole transport layer includes molybdenum trioxide ( _MoO₃ ), nickel monoxide (NiO), tungsten trioxide ( _WO₃ ), PEDOT:PSS, etc. , , , , Bath copper alloy (BCP), barkminster fullerene (C60), polyethylenimine (PEI), ethoxylated polyethylenimine (PEIE), or combinations thereof. PEI may have the following structure. PEIE can have the following structure Where x, y, and z are molar fractions, and the sum of x, y, and z is 1. In other embodiments, the first carrier transport layer 130 disposed between the first reflective layer 120 and the photoelectric conversion layer 140 is omitted, so that the photoelectric conversion layer 140 is disposed on the first reflective layer 120 and directly contacts the first reflective layer 120. In other embodiments, the second carrier transport layer 150 disposed between the photoelectric conversion layer 140 and the second reflective layer 160 is omitted, so that the second reflective layer 160 is disposed on the photoelectric conversion layer 140 and directly contacts the photoelectric conversion layer 140.

In some embodiments, the photoelectric conversion layer 140 contains a material responsive to short-wavelength infrared (SWIR) light; more specifically, the photoelectric conversion layer 140 is responsive to light with wavelengths greater than or equal to 1000 nm. For example, the photoelectric conversion layer 140 can detect light with wavelengths between 1000 nm and 5500 nm, such as 1000, 1050, 1500, 2000, 2500, 3000, 3500, 4000, 4500, 5000, or 5500 nm. In some embodiments, the photoelectric conversion layer 140 has an optical bandgap of less than or equal to 1.24 eV, such as 0.84, 0.94, 1.04, 1.14, or 1.24 eV. In some embodiments, the thickness T4 of the photoelectric conversion layer 140 is between 135 nm and 500 nm, for example, 135, 140, 160, 180, 200, 220, 240, 260, 280, 300, 320, 340, 360, 380, 400, 420, 440, 460, 480, or 500 nm. When the thickness T4 is less than 135 nm, the resonant cavity effect between the first reflective layer 120 and the second reflective layer 160 may be weak. When the thickness T4 exceeds 500 nm, the EQE of the optoelectronic element module 100 may decrease due to the limited carrier transport capability of the photoelectric conversion layer 140. In some embodiments, the photoelectric conversion layer 140 is formed by rotational coating.

In some embodiments, the photoelectric conversion layer 140 includes organic semiconductors, inorganic semiconductors, quantum dots, perovskite, or combinations _thereof . In some embodiments, the quantum dots include CdSe, CdZnS, CdSeS, CdS, ZnSe, InP, InS, _CdTe , CuInS₂, CuInZnS, ZnS, PbS, PbSe, _AgInS₂ , _Ag₂Te , InAs, _Cd₃As₂ , _AgBiS₂ , InAs/InP, InGaP, or combinations thereof. In some embodiments, perovskite has the following general formula: _ABX₃ , where A is an organic cation, B is a metallic cation, and X is a halogen anion. In some embodiments, the perovskite includes _CH3NH3PbI3 , _CH3NH3PbBr3 , _{( MeNH3} ) _{PbBr3 , Cs2Sn3I6} , _Ag3BiI6 , _{( CH3NH3} ) _3Bi2Cl9 , _Cs2SnI5Br , _Cs2TiBr6 , or combinations _thereof . In some embodiments, the _organic semiconductor includes _one or _more p-type organic semiconductors _{and one} or more _n -type organic semiconductors. The _{p -} type organic semiconductors may be conjugated polymers, and the n-type organic semiconductors may be non-fullerene materials or fullerene materials. For example, p-type organic semiconductors include: , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Or combinations thereof. In the above-described P-type organic semiconductors, n1 to n41 are each independently a positive integer from 1 to 1000. a5 to a20, a22, a23, a25, a28 to a34, b5 to b20, b22, b23, b25, b28 to b34, c35 to c37, d35 to d37, and e35 to d37 each represent a mole fraction, and each is greater than 0 and less than 1. In each P-type organic semiconductor, the sum of all mole fractions is 1. For example, N-type organic semiconductors include: (R is) ), , , , , , , , , , , (R stands for ethylhexyl) (R stands for ethylhexyl) , , (R represents hexyldecyl) (R represents hexyldecyl) (R represents decyl tetradecyl) , , (R is) ), , , , , , , , , , , , , , , , , , , , (R is) ), , , , Or a combination thereof.

In some embodiments, the second reflective layer 160 is a light-transmitting conductive layer. In some embodiments, the thickness T5 of the second reflective layer 160 is 90 nm to 200 nm, for example, 90, 100, 120, 140, 160, 180, or 200 nm. When the thickness T5 falls within the above range, the optoelectronic element module 100 can still receive sufficient light for photoelectric conversion. In some embodiments, the second reflective layer 160 includes a transparent conductive oxide, a transparent conductive polymer, nano-silver wires, a metal-containing layer with a thickness of less than or equal to 15 nm, or a combination thereof. TCOs include indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), indium tin oxide (ITO), zinc tin oxide (ZTO), aluminum zinc oxide (AZO), or combinations thereof. Transparent conductive polymers include poly(3,4-ethylenedioxythiophene): poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), polyaniline, polyfluorene, polypyrrole, polythiophene, polycarbazole, or combinations thereof. The metal layer may include a metal layer with a thickness of less than or equal to 15 nm, such as a silver layer, a gold layer, an aluminum layer, a copper layer, or a combination thereof.

The features of this disclosure will be described more specifically below with reference to embodiments. Although the following embodiments are described, the materials used, their quantities and ratios, processing details, and processing procedures may be appropriately varied without departing from the scope of this disclosure. Therefore, this disclosure should not be interpreted restrictively based on the embodiments described below.

Figure 2 is a cross-sectional schematic diagram of the optoelectronic component module 200 of Embodiments 1-23. As shown in Figure 2, the optoelectronic component module 200 includes a glass substrate 210, an Ag layer 220, a ZnO layer 230, a photoelectric conversion layer 240, a _MoO3 layer 250, and an IZO layer 260 stacked from bottom to top. The optoelectronic component module 200 is top-illuminated, so light L2 is applied from above the optoelectronic component module 200 for measurement. The measurement results are shown in Figures 4 to 8. Figures 4, 5, 6, 7, and 8 are the external quantum efficiency-wavelength relationship diagrams of the optoelectronic element module 200 in Examples 1-7, 8-10, 11-16, 17-19, and 20-23, respectively. The external quantum efficiency was measured at -4V. It is worth noting that the optoelectronic element module 200 has a resonant cavity, that is, the space between the upper surface of the Ag layer 220 and the lower surface of the IZO layer 260. Therefore, light L2 will be reflected between the Ag layer 220 and the IZO layer 260. More specifically, after light L2 enters the optoelectronic module 200, it is reflected by the Ag layer 220, passes through the ZnO layer 230, the photoelectric conversion layer 240 and the _MoO3 layer 250 again, and is reflected by the IZO layer 260, thereby increasing the light absorption of the photoelectric conversion layer 240.

The photoelectric conversion layer 240 in embodiments 1-19 includes a P-type organic semiconductor and an N-type organic semiconductor that can respond to SWIR light. Figure 3 shows the absorption spectrum 300P of the P-type organic semiconductor and the absorption spectrum 300N of the N-type organic semiconductor. The energy of the highest occupied molecular orbital (HOMO) of the P-type organic semiconductor is -4.91 eV, and the energy of the lowest unoccupied molecular orbital (LUMO) is -4.16 eV. The energy of the HOMO of the N-type organic semiconductor is -5.73 eV, and the energy of the LUMO is -4.42 eV. The manufacturing method of the optoelectronic component module 200 in Examples 1-19 includes the following operations: dissolving a P-type organic semiconductor and an N-type organic semiconductor with a molar ratio of 1:2 in the solvent o-xylene to obtain a mixture with a solid content of 30 mg/mL, rotating the mixture onto a ZnO layer 230, annealing it at 100 ^° C for 5 minutes to form a photoelectric conversion layer 240, and then sequentially depositing a _MoO3 layer 250 and an IZO layer 260.

The photoelectric conversion layer 240 in embodiments 20-23 includes a P-type organic semiconductor and an N-type organic semiconductor that can respond to SWIR light, which are respectively... and The manufacturing method of the optoelectronic component module 200 in embodiments 20-23 includes the following operations: dissolving a P-type organic semiconductor and an N-type organic semiconductor with a molar ratio of 1:0.75 in chloroform solvent to obtain a mixture with a solid content of 21 mg/mL; rotating the mixture onto a ZnO layer 230; annealing at 100 ^° C for 5 minutes to form a photoelectric conversion layer 240; and then sequentially depositing a _MoO3 layer 250 and an IZO layer 260.

The structural parameters and EQE test results of the optoelectronic component module 200 in Examples 1-23 are shown in Table 1 below. Table 1 Implementation Examples Ag layer thickness (nm) ZnO layer thickness (nm) Photoelectric conversion layer thickness (nm) MoO _3- layer thickness (nm) IZO layer thickness (nm) Maximum response wavelength greater than 1000 nm and EQE EQE at 1300 nm 1 75 30 138 10 150 1000 nm, 9.5% 6.8% 2 75 30 192 10 150 1050 nm, 19.8% 11.5% 3 75 30 243 10 150 1160 nm, 22.6% 14.9% 4 75 30 303 10 150 1190 nm, 20.3% 17.5% 5 75 30 321 10 150 1280 nm, 19.5% 18.8% 6 75 30 346 10 150 1310 nm, 15.9% 15.5% 7 75 30 408 10 150 1360 nm, 12.6% 11.6% 8 75 30 330 10 150 1160 nm, 23.2% 20.1% 9 75 60 330 10 150 1260 nm, 25.8% 24.0% 10 75 100 330 10 150 1270 nm, 24.9% 23.9% 11 75 30 250 10 90 1170 nm, 10% 5.7% 12 75 30 300 20 120 1170 nm, 32.3% 27.6% 13 75 30 350 40 150 1330 nm, 16.7% 16.5% 14 75 60 250 20 150 1270 nm, 16.2% 15.8% 15 75 60 300 40 90 1240 nm, 22.4% 20.6% 16 75 60 350 10 120 1290 nm, 18.4% 18.3% 17 75 100 250 40 120 1240 nm, 20.4% 16.2% 18 75 100 300 10 150 1270 nm, 19.1% 18.7% 19 75 100 350 20 90 1330 nm, 23.3% 23.1% 20 75 30 130 10 150 1000 nm, 6.9% 1.7% twenty one 75 30 180 10 150 1110 nm, 5.5% 2.4% twenty two 75 30 230 10 150 1180 nm, 1.9% 1.8% twenty three 75 30 330 10 150 1000 nm, 0.8% 0.7%

Figure 9 is a cross-sectional schematic diagram of the optoelectronic module 900 of Comparative Examples 1-8. As shown in Figure 9, the optoelectronic module 900 includes a glass substrate 910, an ITO layer 920, a ZnO layer 930, a photoelectric conversion layer 940, a _MoO3 layer 950, and an IZO layer 960 stacked from bottom to top. The optoelectronic module 900 is a top-illuminated type and does not have a resonant cavity. The photoelectric conversion layer 940 of Comparative Examples 1-4 is the same as the photoelectric conversion layer 240 of Examples 1-19, therefore Figure 3 also shows the absorption spectrum 300P of the P-type organic semiconductor and the absorption spectrum 300N of the N-type organic semiconductor of the photoelectric conversion layer 940 of Comparative Examples 1-4. The photoelectric conversion layer 940 in Comparative Examples 5-8 is the same as the photoelectric conversion layer 240 in Examples 20-23. A light L3 was applied from above the photoelectric element module 900 for measurement; the measurement results are shown in Figures 10 and 11. Figures 10 and 11 are the external quantum efficiency-wavelength relationship diagrams for the photoelectric element modules 900 in Comparative Examples 1-4 and Comparative Examples 5-8, respectively. The external quantum efficiency was measured at -4V. The structural parameters and EQE test results of the photoelectric element modules 900 in Comparative Examples 1-8 are shown in Table 2 below. Table 2 Comparative example ITO layer thickness (nm) ZnO layer thickness (nm) Photoelectric conversion layer thickness (nm) MoO _3- layer thickness (nm) IZO layer thickness (nm) Maximum response wavelength greater than 1000 nm and EQE EQE at 1300 nm 1 150 30 142 10 150 1250 nm, 8.0% 7.3% 2 150 30 208 10 150 1280 nm, 9.2% 9.0% 3 150 30 273 10 150 1280 nm, 9.9% 9.8% 4 150 30 328 10 150 1140 nm, 12.0% 9.5% 5 150 30 130 10 150 1180 nm, 1.6% 1.0% 6 150 30 180 10 150 1260 nm, 1.8% 1.4% 7 150 30 230 10 150 1260 nm, 1.0% 0.8% 8 150 30 330 10 150 1260 nm, 0.8% 0.6%

Please refer to Embodiments 1-7 in Table 1, Figure 2 and Figure 4. Figure 4 is a graph showing the external quantum efficiency-wavelength relationship of the photoelectric element module 200 in Embodiments 1-7. The photoelectric element module 200 in Embodiments 1-7 has a resonant cavity. As can be seen from curve E1 in Embodiment 1, curve E2 in Embodiment 2, curve E3 in Embodiment 3, curve E4 in Embodiment 4, curve E5 in Embodiment 5, curve E6 in Embodiment 6 and curve E7 in Embodiment 7, as the thickness of the photoelectric conversion layer 240 increases, the EQE also increases due to the increase in light absorption. Furthermore, the maximum wavelength of different curves exhibits a redshift phenomenon. When the thickness of the photoelectric conversion layer 240 is greater than 303 nm, a redshift still occurs, which means that the resonant cavity effect still affects the photoelectric element module 200, but the EQE decreases slightly, indicating that the EQE is affected by the carrier transport capability of the photoelectric conversion layer 240. Please refer further to Comparative Examples 1-4, Figure 9 and Figure 10 in Table 2. Figure 10 is the external quantum efficiency-wavelength relationship of the photoelectric element module 900 of Comparative Examples 1-4. As can be seen from curve CE1 of Comparative Example 1, curve CE2 of Comparative Example 2, curve CE3 of Comparative Example 3 and curve CE4 of Comparative Example 4, the optoelectronic element module 900 of Comparative Examples 1 to 4 does not have a resonant cavity, so it cannot exhibit effective EQE in the SWIR band. Furthermore, even if the thickness of the optoelectronic conversion layer 940 is adjusted, the EQE cannot be effectively improved.

Please refer to Examples 8-10 in Table 1, Figure 2, and Figure 5. As can be seen from curve E8 of Example 8, curve E9 of Example 9, and curve E10 of Example 10, the EQE of the optoelectronic module 200 increases as the thickness of the ZnO layer 230 increases. The ZnO layer 230 has electron transmission capability and can act as an optical gap to properly adjust the optical field and effectively distribute photons into the photoelectric conversion layer 240, thereby improving the EQE of the optoelectronic module 200.

Please refer to Examples 11-19 in Table 1, Figure 2, Figure 6, and Figure 7. With the Ag layer 220 thickness fixed, the thicknesses of the ZnO layer 230, photoelectric conversion layer 240, _MoO3 layer 250, and IZO layer 260 are adjusted to adjust the thickness of the resonant cavity, thereby optimizing the EQE of the optoelectronic device module 200. Figure 6 shows curve E11 of Example 11, curve E12 of Example 12, curve E13 of Example 13, curve E14 of Example 14, curve E15 of Example 15, and curve E16 of Example 16. Figure 7 shows curve E17 of Example 17, curve E18 of Example 18, and curve E19 of Example 19. As shown in Example 12, under illumination with light of wavelength 1300 nm, the optoelectronic module 200 can have an EQE of up to 27.6%.

Please refer to Examples 20-23, Figure 2, and Figure 8 in Table 1. Figure 8 is a graph showing the external quantum efficiency-wavelength relationship of the optoelectronic module 200 in Examples 20-23. The optoelectronic module 200 in Examples 20-23 has a resonant cavity. As can be seen from curve E20 in Example 20, curve E21 in Example 21, curve E22 in Example 22, and curve E23 in Example 23, as the thickness of the photoelectric conversion layer 240 increases, the maximum wavelength of different curves exhibits a redshift phenomenon. Furthermore, the EQE can be further optimized by adjusting the thickness of the photoelectric conversion layer 240. Please further refer to Comparative Examples 5-8, Figure 9, and Figure 11 in Table 2. Figure 11 is a graph showing the external quantum efficiency-wavelength relationship of the optoelectronic module 900 in Comparative Examples 5-8. As can be seen from curve CE5 of Comparative Example 5, curve CE6 of Comparative Example 6, curve CE7 of Comparative Example 7 and curve CE8 of Comparative Example 8, the optoelectronic module 900 of Comparative Examples 5 to 8 does not have a resonant cavity, so it cannot exhibit effective EQE in the SWIR band. Even if the thickness of the optoelectronic conversion layer 940 is adjusted, the EQE cannot be improved.

In summary, this disclosure provides an optoelectronic device module and its operation method. The optoelectronic device module includes a substrate, a first reflective layer, a photoelectric conversion layer, and a second reflective layer stacked sequentially from bottom to top, and can receive light from above. Since the first reflectivity of the first reflective layer is greater than the second reflectivity of the second reflective layer, light is easily reflected by the first reflective layer and re-enters the photoelectric conversion layer, thereby increasing the light absorption of the photoelectric conversion layer, thereby improving the external quantum efficiency (EQE) and photocurrent of the optoelectronic device module.

Although this disclosure has been described in considerable detail with reference to certain embodiments, other embodiments may also exist. Therefore, the spirit and scope of the appended patent application should not be limited to the description of the embodiments contained herein.

It will be apparent to those skilled in the art that various modifications and changes can be made to the structure of this disclosure without departing from the scope or spirit of this disclosure. In view of the foregoing, this disclosure is intended to cover modifications and changes to this disclosure that fall within the scope of the appended patent applications.

100, 200, 900: Optoelectronic component module; 110: Substrate; 120: First reflective layer; 130: First carrier transport layer; 140: Photoelectric conversion layer; 150: Second carrier transport layer; 160: Second reflective layer; 210, 910: Glass substrate; 220: Ag layer; 230, 930: ZnO layer; 240, 940: Photoelectric conversion layer; 250, 950: _MoO3 layer; 260, 960: IZO layer; 300N, 300P: Absorption spectrum; 920: ITO layer CE1, CE2, CE3, CE4, CE5, CE6, CE7, CE8, E1, E2, E3, E4, E5, E6, E7, E8, E9, E10, E11, E12, E13, E14, E15, E16, E17, E18, E19, E20, E21, E22, E23: Curves L1, L2, L3: Rays T1, T2, T3, T4, T5: Thickness

A more comprehensive understanding of this disclosure can be achieved by reading the detailed description of the following embodiments and referring to the accompanying figures. Figure 1 is a schematic cross-sectional view of the optoelectronic device modules according to various embodiments of this disclosure. Figure 2 is a schematic cross-sectional view of the optoelectronic device modules of Embodiments 1-23. Figure 3 shows the absorption spectra of the P-type and N-type organic semiconductors of the photoelectric conversion layers in Embodiments 1-19 and Comparative Examples 1-4. Figures 4, 5, 6, 7, and 8 are respectively external quantum efficiency-wavelength relationships for the optoelectronic device modules of Embodiments 1-7, 8-10, 11-16, 17-19, and 20-23. Figure 9 is a schematic cross-sectional view of the optoelectronic module of Comparative Examples 1-8. Figures 10 and 11 are external quantum efficiency-wavelength relationships for the optoelectronic modules of Comparative Examples 1-4 and Comparative Examples 5-8, respectively.

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100: Optoelectronic component module 110: Substrate 120: First reflective layer 130: First carrier transport layer 140: Optoelectronic conversion layer 150: Second carrier transport layer 160: Second reflective layer L1: Light ray T1, T2, T3, T4, T5: Thickness

Claims (10)

An optoelectronic component module includes: a substrate; a first reflective layer disposed on the substrate, wherein the first reflective layer has a first reflectivity; a photoelectric conversion layer disposed on the first reflective layer and having a thickness greater than or equal to 135 nm; and a second reflective layer disposed on the photoelectric conversion layer, wherein the second reflective layer has a second reflectivity, the first reflectivity being greater than the second reflectivity, the first reflective layer having a first reflectivity greater than or equal to 50%, and the second reflective layer having a second reflectivity greater than or equal to 5%. The optoelectronic element module as described in claim 1, wherein the thickness of the optoelectronic conversion layer is from 135 nm to 500 nm. The optoelectronic module as described in claim 1 further includes a carrier transport layer disposed between the first reflective layer and the photoelectric conversion layer or between the photoelectric conversion layer and the second reflective layer. The optoelectronic element module as described in claim 3, wherein the thickness of the carrier transport layer is 10 nm to 100 nm. The optoelectronic module as described in claim 1, wherein the thickness of the first reflective layer is greater than or equal to 50 nm. The optoelectronic module as described in claim 1, wherein the optoelectronic conversion layer has an optical bandgap of less than or equal to 1.24 eV. A method of operating an optoelectronic element module includes: receiving light through the optoelectronic element module as described in any one of claims 1 to 6, wherein an upper surface of the second reflective layer is a light-receiving surface. An optoelectronic component module includes: a substrate; a first reflective layer disposed on the substrate, wherein the first reflective layer has a first reflectivity, the first reflective layer comprising silver, aluminum, copper, gold, titanium, tungsten, molybdenum, titanium nitride, or a combination thereof; a photoelectric conversion layer disposed on the first reflective layer and having a thickness greater than or equal to 135 nm; and a second reflective layer disposed on the photoelectric conversion layer, wherein the second reflective layer has a second reflectivity, the first reflectivity being greater than the second reflectivity. An optoelectronic component module includes: a substrate; a first reflective layer disposed on the substrate, wherein the first reflective layer has a first reflectivity; a photoelectric conversion layer disposed on the first reflective layer and having a thickness greater than or equal to 135 nm; and a second reflective layer disposed on the photoelectric conversion layer, wherein the second reflective layer has a second reflectivity, the first reflectivity being greater than the second reflectivity, and the thickness of the second reflective layer being 50 nm to 300 nm. An optoelectronic component module includes: a substrate; a first reflective layer disposed on the substrate, wherein the first reflective layer has a first reflectivity; a photoelectric conversion layer disposed on the first reflective layer and having a thickness greater than or equal to 135 nm; and a second reflective layer disposed on the photoelectric conversion layer, wherein the second reflective layer has a second reflectivity, the first reflectivity being greater than the second reflectivity, the second reflective layer comprising a transparent conductive oxide, a transparent conductive polymer, nano-silver wires, a metal-containing layer with a thickness less than or equal to 15 nm, or a combination thereof.