TWI909308B - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method. A substrate processing apparatus (100) includes a substrate processing unit (10), an electrolysis section (310), an ozone water tank (320), and a hydrogen water tank (330). The substrate processing unit (10) includes nozzles (44, 54) that supply cleaning liquids to a substrate (W). The electrolysis section (310) electrolyzes pure water to generate, as the cleaning liquids, ozone water and hydrogen water. The ozone water tank (320) accommodates the ozone water. The hydrogen water tank (330) accommodates the hydrogen water. The nozzles (44, 54) supply the ozone water from the ozone tank (320) and the hydrogen water from the hydrogen water tank (330) to the substrate (W).

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method.

Previously, substrate processing apparatuses for processing substrates were known. These apparatuses are particularly suitable for manufacturing semiconductor substrates. The substrate processing apparatus uses a processing liquid such as a chemical solution to process the substrate. Among such substrate processing apparatuses, there are those that, after processing the substrate with a processing liquid such as a chemical solution, rinse (clean) it with pure water (see, for example, Patent 1). [Prior Art Documents] [Patent Documents]

[Patent Document 1] Japanese Patent Application Publication No. 2022-171462

[Problem to be Solved by the Invention] It is said that when a metal film is formed on the surface of a substrate, if it is rinsed with pure water as in Patent 1, the metal film may sometimes corrode. Therefore, for substrates with a metal film formed on their surface, sometimes after treating the substrate with a chemical solution or other treatment liquid, ammonia water is used for rinsing.

However, if ammonia is used as the rinsing solution, during the subsequent drying process when the substrate is rotated at high speed, ammonia residue will remain on the inner surface of the protective cover (the surface that receives ammonia), or ammonia discharged from the substrate will splash onto the protective cover and adhere to the substrate. Therefore, there is a problem of ammonia turning into particles.

This invention was made in view of the above-mentioned problems, and its purpose is to provide a substrate processing apparatus and method capable of preventing cleaning fluid from turning into particles. [Technical means to solve the problem]

According to one aspect of the present invention, a substrate processing apparatus includes a substrate processing unit, an electrolysis unit, an ozone water tank, and a hydrogen water tank. The substrate processing unit has a nozzle for supplying cleaning fluid to the substrate. The electrolysis unit electrolyzes pure water to generate ozone water and hydrogen water as the cleaning fluid. The ozone water tank contains the ozone water. The hydrogen water tank contains the hydrogen water. The nozzle supplies the ozone water from the ozone water tank and the hydrogen water from the hydrogen water tank to the substrate.

In one embodiment, the nozzle includes a first nozzle and a second nozzle. The first nozzle supplies at least one of the ozone water and the hydrogen water to the upper surface of the substrate. The second nozzle supplies at least the other of the ozone water and the hydrogen water to the lower surface of the substrate.

In one embodiment, the first nozzle and the second nozzle simultaneously supply the cleaning solution to the substrate.

In one embodiment, the substrate processing apparatus includes an ozone water pipe, a hydrogen water pipe, and a switching valve. The ozone water pipe supplies ozone water from the ozone water tank to at least one of the first nozzle and the second nozzle. The hydrogen water pipe supplies hydrogen water from the hydrogen water tank to at least one of the first nozzle and the second nozzle. The switching valve switches the cleaning fluid supplied to at least one of the first nozzle and the second nozzle. At least one of the first nozzle and the second nozzle supplies both the ozone water and the hydrogen water to the substrate.

In one embodiment, one of the first nozzle and the second nozzle is the second nozzle. The first nozzle supplies one of the ozone water and the hydrogen water to the upper surface of the substrate, while the second nozzle supplies the other of the ozone water and the hydrogen water to the lower surface of the substrate. Then, the switching valve switches the cleaning fluid supplied to the second nozzle, thereby simultaneously supplying one of the ozone water and the hydrogen water to the substrate by both the first nozzle and the second nozzle.

In one embodiment, the first nozzle supplies hydrogen water to the upper surface of the substrate, while the second nozzle supplies ozone water to the lower surface of the substrate. Then, the switching valve switches the cleaning solution supplied to the second nozzle from ozone water to hydrogen water, thereby simultaneously supplying hydrogen water to the substrate by the first and second nozzles.

In one embodiment, the first nozzle supplies the hydrogen water to the upper surface of the substrate. The second nozzle supplies the ozone water to the lower surface of the substrate.

In one embodiment, the substrate processing apparatus includes a bubble generating device for generating bubbles in the hydrogen water.

According to another embodiment of the present invention, the substrate processing method includes: a generation step, which involves electrolyzing pure water to generate ozone water and hydrogen water as cleaning solutions; and a cleaning step, which involves cleaning the substrate using the ozone water and hydrogen water. In the generation step, the generated ozone water is contained in an ozone water tank, and the generated hydrogen water is contained in a hydrogen water tank. In the cleaning step, the ozone water in the ozone water tank is supplied to the substrate, and the hydrogen water in the hydrogen water tank is supplied to the substrate.

In one embodiment, during the cleaning process, at least one of the ozone water and the hydrogen water is supplied to the upper surface of the substrate, and at least the other of the ozone water and the hydrogen water is supplied to the lower surface of the substrate.

In one embodiment, during the cleaning process, the cleaning solution is supplied to both the upper and lower surfaces of the substrate simultaneously.

In one embodiment, during the cleaning process, the cleaning solution supplied to at least one of the upper surface and the lower surface of the substrate is switched.

In one embodiment, during the cleaning process, one of the ozone water and the hydrogen water is supplied to the upper surface of the substrate, while the other of the ozone water and the hydrogen water is supplied to the lower surface of the substrate. Then, the cleaning liquid supplied to the lower surface of the substrate is switched, thereby simultaneously supplying one of the ozone water and the hydrogen water to the substrate.

In one embodiment, during the cleaning process, hydrogen water is supplied to the upper surface of the substrate, and simultaneously, ozone water is supplied to the lower surface of the substrate. Then, the cleaning solution supplied to the lower surface of the substrate is switched from ozone water to hydrogen water, thereby simultaneously supplying hydrogen water to both the upper and lower surfaces of the substrate.

In one embodiment, during the cleaning process, hydrogen water is supplied to the upper surface of the substrate, and ozone water is supplied to the lower surface of the substrate.

In one embodiment, before the hydrogen water is supplied to the substrate, bubbles are generated in the hydrogen water. [Effects of the Invention]

According to the present invention, a substrate processing apparatus and a substrate processing method are provided that can prevent cleaning fluid from turning into particles.

The following description describes an embodiment of the substrate processing apparatus of the present invention with reference to the accompanying drawings. Furthermore, the same or equivalent parts are labeled with the same reference numerals in the drawings, and the descriptions are not repeated. In this specification, for ease of understanding, mutually orthogonal X-axis, Y-axis, and Z-axis are sometimes shown. In this embodiment, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

(First Embodiment) Referring to Figures 1 to 5, the substrate processing apparatus 100 of the first embodiment of the present invention will be described. Figure 1 is a schematic top view of the substrate processing apparatus 100 of the first embodiment.

As shown in Figure 1, the substrate processing apparatus 100 processes the substrate W. The substrate processing apparatus 100 processes the substrate W by at least one of etching, surface treatment, property assignment, processing film formation, removal of at least a portion of the film, and cleaning.

The substrate W serves as a semiconductor substrate. The substrate W contains a semiconductor wafer. For example, the substrate W is generally circular. Here, the substrate processing apparatus 100 processes the substrates W one by one.

The substrate processing apparatus 100 includes a plurality of substrate processing units 10, a processing liquid tank 110, a processing liquid reservoir 120, a plurality of loading ports LP, a transfer robot IR, a central robot CR, and a control device 101. The control device 101 controls the loading ports LP, the transfer robot IR, and the central robot CR. The control device 101 includes a control unit 102 and a memory unit 104.

Each loading port LP stacks and houses multiple substrates W. A transfer robot IR transports substrates W between loading ports LP and a central robot CR. The central robot CR transports substrates W between the transfer robot IR and substrate processing unit 10. Each substrate processing unit 10 sprays processing fluid onto the substrates W to process them. The processing fluid may include, for example, chemicals, rinsing fluid (cleaning fluid), removal fluid, and/or water-repellent agents. A processing fluid tank 110 houses the processing fluid. Furthermore, the processing fluid tank 110 may also house gases.

Specifically, a plurality of substrate processing units 10 form a plurality of towers TW (four towers TW in Figure 1) arranged in a top-down manner surrounding the central robot CR. Each tower TW contains a plurality of substrate processing units 10 stacked vertically (three substrate processing units 10 in Figure 1). Processing liquid tanks 120 correspond to the plurality of towers TW. Liquid in a processing liquid tank 110 is supplied via any processing liquid tank 120 to all substrate processing units 10 contained in the tower TW corresponding to the processing liquid tank 120. Furthermore, gas in a processing liquid tank 110 is supplied via any processing liquid tank 120 to all substrate processing units 10 contained in the tower TW corresponding to the processing liquid tank 120.

Typically, the processing fluid cabinet 110 has a preparation tank (reservoir) for preparing the processing fluid. The processing fluid cabinet 110 may have a preparation tank for one type of processing fluid or a preparation tank for multiple types of processing fluid. Furthermore, the processing fluid cabinet 110 has a pump, nozzle, and/or filter for circulating the processing fluid.

The control device 101 controls various operations of the substrate processing device 100. The substrate processing unit 10 processes the substrate W by means of the control device 101.

The control device 101 includes a control unit 102 and a memory unit 104. The control unit 102 has a processor. The control unit 102 may have, for example, a central processing unit (CPU). Alternatively, the control unit 102 may also have a general-purpose computer.

Memory Unit 104 contains memory data and computer programs. The data includes process recipe data. The process recipe data contains information representing multiple process recipes. Each of the multiple process recipes specifies the processing content and processing order of the substrate W.

The memory unit 104 includes a main memory device and an auxiliary memory device. The main memory device is, for example, semiconductor memory. The auxiliary memory device is, for example, semiconductor memory and/or a hard disk. The memory unit 104 may also include removable media. The control unit 102 executes the computer program stored in the memory unit 104 to perform board processing operations.

Next, the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment will be described with reference to FIG2. FIG2 is a schematic diagram of the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment.

As shown in Figure 2, the substrate processing unit 10 includes a chamber 12, a substrate holding section 20, a processing liquid supply section 30, a first cleaning liquid supply section 40, and a second cleaning liquid supply section 50. The chamber 12 houses the substrate W. The substrate holding section 20 holds the substrate W.

The chamber 12 is generally box-shaped with internal space. The chamber 12 houses the substrate W. Here, the substrate processing apparatus 100 is a monolithic type that processes the substrate W one by one, and the substrate W is housed one by one in the chamber 12. The substrate W is housed in the chamber 12 and processed within the chamber 12. At least a portion of the substrate holding part 20 and the processing liquid supply part 30 described below are housed in the chamber 12.

The substrate holding section 20 holds the substrate W. The substrate holding section 20 holds the substrate W horizontally such that the upper surface (front) Wa of the substrate W faces upward and the lower surface (back) Wb of the substrate W faces vertically downward. Furthermore, the substrate holding section 20 rotates the substrate W while holding it. The substrate holding section 20 rotates the substrate W while holding it.

For example, the substrate holding portion 20 can also be a clamping type that clamps the end of the substrate W. Alternatively, the substrate holding portion 20 can also have any mechanism for holding the substrate W from the lower surface Wb. For example, the substrate holding portion 20 can also be a vacuum type. In this case, the substrate holding portion 20 holds the substrate W horizontally by adsorbing the central portion of the lower surface Wb of the substrate W, which is a non-device forming surface, onto the upper surface. Alternatively, the substrate holding portion 20 can also combine a clamping type that contacts the peripheral end face of the substrate W with a vacuum type.

For example, the substrate holding portion 20 includes a rotating base 21, a clamping member 22, a shaft 23, an electric motor 24, and a housing 25. The clamping member 22 is disposed on the rotating base 21. The clamping member 22 clamps the substrate W. Typically, a plurality of clamping members 22 are disposed on the rotating base 21.

Shaft 23 is a hollow shaft. Shaft 23 extends vertically along the axis of rotation Ax. A rotating base 21 is attached to the upper end of shaft 23. The substrate W is placed on top of the rotating base 21.

The rotating base 21 is circular and horizontally supports the substrate W. A shaft 23 extends downward from the center of the rotating base 21. An electric motor 24 imparts rotational force to the shaft 23. The electric motor 24 causes the substrate W and the rotating base 21 to rotate about the rotation axis Ax by rotating the shaft 23 in the rotation direction. A casing 25 surrounds the shaft 23 and the electric motor 24.

The processing fluid supply unit 30 supplies processing fluid to the substrate W. Typically, the processing fluid supply unit 30 supplies processing fluid to the upper surface Wa of the substrate W. At least a portion of the processing fluid supply unit 30 is housed within the chamber 12.

The treatment solution may also contain a chemical solution. For example, the chemical solution may contain hydrofluoric acid. For instance, hydrofluoric acid can be heated to above 40°C and below 70°C, or to above 50°C and below 60°C. However, hydrofluoric acid may also be left unheated. Furthermore, the chemical solution may also contain water or phosphoric acid.

Furthermore, the solution may also contain hydrogen peroxide. Additionally, the solution may also contain SC1 (ammonia-hydrogen peroxide mixture), SC2 (hydrochloric acid-hydrogen peroxide mixture), or aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid). In the first embodiment, the processing solution supply unit 30 supplies SC1 to the substrate W.

The treatment fluid supply unit 30 includes a piping 32, a nozzle 34, and a valve 36. The nozzle 34 sprays treatment fluid onto the upper surface Wa of the substrate W. For example, the nozzle 34 can spray treatment fluid into the center of the substrate W, or into the area between the center and the periphery of the substrate W. The nozzle 34 has a spray outlet from which treatment fluid is sprayed. The nozzle 34 is connected to the piping 32. Treatment fluid is supplied to the piping 32 from a supply source. The valve 36 opens and closes the flow path within the piping 32. Preferably, the nozzle 34 is movable relative to the substrate W. The nozzle 34 can move horizontally and/or vertically following a moving mechanism controlled by the control unit 102. Furthermore, it should be noted that the moving mechanism has been omitted in this instruction manual to avoid making the diagrams too complex.

Valve 36 regulates the opening of piping 32, thereby adjusting the flow rate of the treatment fluid supplied to piping 32. Specifically, valve 36 includes: a valve body (not shown) having a valve seat disposed therein; a valve body that opens and closes the valve seat; and an actuator (not shown) that moves the valve body between the open position and the closed position.

The first cleaning fluid supply unit 40 supplies cleaning fluid to the upper surface Wa of the substrate W. At least a portion of the first cleaning fluid supply unit 40 is housed within the chamber 12. The cleaning fluid may include, for example, ozone water and hydrogen water.

The first cleaning fluid supply unit 40 includes a piping 42, a nozzle 44, and a valve 46. The nozzle 44 sprays cleaning fluid onto the upper surface Wa of the substrate W. For example, the nozzle 44 can spray cleaning fluid onto the center of the substrate W, or onto the area between the center and the periphery of the substrate W. The nozzle 44 has a spray outlet from which cleaning fluid is sprayed. The nozzle 44 is connected to the piping 42. Cleaning fluid is supplied to the piping 42 from a supply source. The valve 46 opens and closes the flow path within the piping 42. Preferably, the nozzle 44 is movable relative to the substrate W. The nozzle 44 can move horizontally and/or vertically following a moving mechanism controlled by the control unit 102. Furthermore, nozzle 44 is an example of the "first nozzle" of the present invention. Also, valve 46 is an example of the "switching valve" of the present invention.

The nozzle 44 supplies at least one of ozone water and hydrogen water to the upper surface Wa of the substrate W. In the first embodiment, the nozzle 44 is capable of supplying ozone water and hydrogen water to the upper surface Wa of the substrate W.

Valve 46 regulates the opening of pipe 42, thereby adjusting the flow rate of cleaning fluid supplied to pipe 42. Specifically, valve 46 includes: a valve body (not shown) having a valve seat disposed therein; a valve body that opens and closes the valve seat; and an actuator (not shown) that moves the valve body between the open position and the closed position.

The second cleaning fluid supply unit 50 supplies cleaning fluid to the lower surface Wb of the substrate W. At least a portion of the second cleaning fluid supply unit 50 is housed within the chamber 12.

The second cleaning fluid supply unit 50 includes a pipe 52, a nozzle 54, and a valve 56. The nozzle 54 sprays cleaning fluid onto the lower surface Wb of the substrate W. For example, the nozzle 54 sprays cleaning fluid onto the center of the substrate W. The nozzle 54 has a spray outlet from which cleaning fluid is sprayed. For example, the nozzle 54 sprays cleaning fluid in a directly upward direction. The nozzle 54 is connected to the pipe 52. Cleaning fluid is supplied to the pipe 52 from a supply source. The valve 56 opens and closes the flow path within the pipe 52. Furthermore, the nozzle 54 can also spray gases such as inert gases in addition to cleaning fluid. In this case, a gas outlet may also be provided on the outer peripheral surface of the nozzle 54, and the nozzle 54 sprays gas radially outward. Furthermore, the nozzle 54 is an example of the "second nozzle" of the present invention. Also, the valve 56 is an example of the "switching valve" of the present invention.

The nozzle 54 supplies at least one of ozone water and hydrogen water to the lower surface Wb of the substrate W. In the first embodiment, the nozzle 54 is capable of supplying ozone water and hydrogen water to the lower surface Wb of the substrate W.

Valve 56 adjusts the opening of pipe 52, thereby adjusting the flow rate of cleaning fluid supplied to pipe 52. Specifically, valve 56 includes: a valve body (not shown) having a valve seat disposed therein; a valve body that opens and closes the valve seat; and an actuator (not shown) that moves the valve body between the open position and the closed position.

The detailed structure of the first cleaning fluid supply unit 40 and the second cleaning fluid supply unit 50 will be described below.

The substrate processing apparatus 100 further includes a protective cover 80. The protective cover 80 recovers the processing fluid that spills from the substrate W. The protective cover 80 is raised and lowered. For example, during the period when the processing fluid supply unit 30 supplies processing fluid to the substrate W, the protective cover 80 rises vertically upward until it is to the side of the substrate W. In this case, the protective cover 80 recovers the processing fluid that spills from the substrate W due to the rotation of the substrate W. Furthermore, when the period during which the processing fluid supply unit 30, the first cleaning fluid supply unit 40, and the second cleaning fluid supply unit 50 supply processing fluid to the substrate W ends, the protective cover 80 descends vertically downward from the side of the substrate W. Specifically, the substrate processing apparatus 100 includes a lifting mechanism (not shown) for raising and lowering the protective cover 80. The lifting mechanism includes, for example, an actuator (not shown) and/or a motor for raising and lowering the protective cover 80.

In the first embodiment, the shield 80 includes a first shield 81 and a second shield 82 disposed radially outward relative to the first shield 81. The first shield 81 and the second shield 82 can be moved individually in the vertical direction by means of a moving mechanism not shown.

As described above, the control device 101 includes a control unit 102 and a memory unit 104. The control unit 102 controls the substrate holding unit 20, the processing fluid supply unit 30, the first cleaning fluid supply unit 40, the second cleaning fluid supply unit 50, and/or the protective cover 80. In one example, the control unit 102 controls the electric motor 24 and the valve 36.

The substrate processing apparatus 100 of this embodiment is preferably used to manufacture semiconductor devices on which semiconductors are disposed. Typically, in a semiconductor device, a conductive layer and an insulating layer are deposited on a substrate. The substrate processing apparatus 100 is preferably used for cleaning and/or processing (e.g., etching, property modification, etc.) of the conductive layer and/or insulating layer during the manufacture of semiconductor devices. Furthermore, the substrate processing apparatus 100 is preferably used for removing the insulating layer (e.g., anti-corrosion layer).

Furthermore, in the substrate processing unit 10 shown in FIG2, the processing liquid supply unit 30 can supply one type of processing liquid to the substrate W, but the processing liquid supply unit 30 may also supply multiple types of processing liquids to the substrate W. For example, the processing liquid supply unit 30 may also include multiple pipes 32, multiple nozzles 34, and multiple valves 36.

Next, the piping configuration of the substrate processing apparatus 100 will be explained with reference to FIG. 3. FIG. 3 is a schematic diagram illustrating the piping configuration of the substrate processing apparatus 100. Furthermore, in FIG. 3, the processing liquid supply unit 30 is omitted for the sake of simplicity. As can be understood from FIG. 1 and FIG. 2, it is preferable that the substrate processing apparatus 100 has a plurality of substrate processing units 10 and can process the substrate W using a plurality of processing liquids. However, here, in order to avoid excessive complexity, the form of supplying one type of processing liquid to one substrate processing unit 10 will be explained.

As shown in Figure 3, the substrate processing apparatus 100 includes an electrolysis unit 310, an ozone water tank 320, and a hydrogen water tank 330. The electrolysis unit 310 electrolyzes pure water to generate ozone water and hydrogen water. The ozone water and hydrogen water are cleaning solutions for cleaning the substrate W. Ozone water removes particles, including metal particles and particles including organic matter. Hydrogen water has a reducing effect on the metal film of the substrate W. In other words, hydrogen water has an anti-corrosion effect on the surface of the substrate W. Furthermore, hydrogen water removes microparticles. Hydrogen water can remove microparticles smaller than metal impurities and organic matter.

The electrolysis unit 310 includes an anode, a cathode, and a membrane such as an ion exchange membrane. By applying a voltage between the anode and cathode, ozone water is generated on the anode side and hydrogen water is generated on the cathode side. A known electrolysis apparatus can be used as the electrolysis unit 310.

Ozone water tank 320 contains ozone water generated by electrolysis unit 310. Hydrogen water tank 330 contains hydrogen water generated by electrolysis unit 310. In the first embodiment, the ozone water in ozone water tank 320 consists only of pure water containing dissolved ozone gas, and does not contain, for example, hydrochloric acid. Similarly, in the first embodiment, the hydrogen water in hydrogen water tank 330 consists only of pure water containing dissolved hydrogen gas, and does not contain, for example, ammonia.

The substrate processing apparatus 100 includes a piping 311 and a valve 312. The piping 311 is connected to the electrolysis unit 310. Pure water is supplied to the piping 311 by a power source. The piping 311 supplies pure water to the electrolysis unit 310.

Valve 312 is configured in pipe 311. Valve 312 opens and closes the flow path within pipe 311. Valve 312 regulates the opening degree of pipe 311, thereby adjusting the flow rate of pure water supplied to pipe 311. Specifically, valve 312 includes: a valve body (not shown) having a valve seat internally disposed therein; a valve body that opens and closes the valve seat; and an actuator (not shown) that moves the valve body between an open position and a closed position.

The substrate processing apparatus 100 includes a flow meter 328, a piping 329, a flow meter 338, and a piping 339. Piping 329 connects the electrolysis unit 310 and the ozone water tank 320. Piping 329 supplies ozone water generated by the electrolysis unit 310 to the ozone water tank 320. Flow meter 328 is disposed on piping 329. Flow meter 328 measures the flow rate of ozone water passing through piping 329. Piping 339 connects the electrolysis unit 310 and the hydrogen water tank 330. Piping 339 supplies hydrogen water generated by the electrolysis unit 310 to the hydrogen water tank 330. Flow meter 338 is disposed on piping 339. Flow meter 338 measures the flow rate of hydrogen water passing through piping 339.

The substrate processing apparatus 100 includes a piping 321 and a valve 322. The piping 321 is connected to an ozone tank 320. Pure water is supplied to the piping 321 from a power source. The piping 321 supplies pure water to the ozone tank 320.

Valve 322 is configured in pipe 321. Valve 322 opens and closes the flow path within pipe 321. Valve 322 regulates the opening degree of pipe 321, thereby adjusting the flow rate of pure water supplied to pipe 321. Furthermore, valve 322 may have, for example, the same structure as valve 312.

The substrate processing apparatus 100 includes a piping 331 and a valve 332. The piping 331 is connected to a hydrogen water tank 330. Pure water is supplied to the piping 331 from a power source. The piping 331 supplies pure water to the hydrogen water tank 330.

Valve 332 is configured in pipe 331. Valve 332 opens and closes the flow path within pipe 331. Valve 332 regulates the opening degree of pipe 331, thereby adjusting the flow rate of pure water supplied to pipe 331. Furthermore, valve 332 may have, for example, the same structure as valve 312.

The substrate processing apparatus 100 includes a first concentration meter 325. The first concentration meter 325 is disposed in an ozone water tank 320. The first concentration meter 325 measures the concentration of ozone water in the ozone water tank 320. The first concentration meter 325 is not particularly limited; for example, it may include a pH meter for measuring the pH of the ozone water, an oxygen meter for measuring the oxygen concentration of the ozone water, or an ORP (Oxidation-reduction potential) meter.

The concentration of ozone water in ozone tank 320 is adjusted to a specified concentration. The concentration of ozone water in ozone tank 320 is lower than the concentration of ozone water supplied from electrolysis unit 310 to piping 329. Furthermore, the substrate processing device 100 supplies pure water to ozone tank 320 based on the measurement results of first concentration meter 325.

The substrate processing apparatus 100 includes a second concentration meter 335 and a bubble generating device 336. The second concentration meter 335 is disposed in a hydrogen water tank 330. The second concentration meter 335 measures the concentration of hydrogen water in the hydrogen water tank 330. The second concentration meter 335 is not particularly limited; for example, it may include a pH meter for measuring the pH of the hydrogen water, a hydrogen meter for measuring the hydrogen concentration of the hydrogen water, or an ORP (oxidation-reduction potential) meter.

The concentration of hydrogen water in the hydrogen water tank 330 is adjusted to a specified concentration. The concentration of hydrogen water in the hydrogen water tank 330 is lower than the concentration of hydrogen water supplied from the electrolysis unit 310 to the piping 339. Furthermore, the substrate processing device 100 supplies pure water to the hydrogen water tank 330 based on the measurement results of the second concentration meter 335.

For example, when the metal film formed on the substrate W includes cobalt, the hydrogen water in the hydrogen water tank 330 is adjusted to a pH greater than 7, or it can be adjusted to a pH greater than 10. Also, when the metal film formed on the substrate W includes cobalt, the hydrogen water in the hydrogen water tank 330 is adjusted to a redox potential of -0.5 V or less, or it can be adjusted to a redox potential of -0.75 V or less. Furthermore, for example, when the metal film formed on the substrate W includes copper, the hydrogen water in the hydrogen water tank 330 is adjusted to a pH greater than 7. Also, when the metal film formed on the substrate W includes copper, the hydrogen water in the hydrogen water tank 330 is adjusted to a redox potential of -0.4 V or less. If configured as described above, the corrosion of the metal film formed on the substrate W can be effectively suppressed by using hydrogen water.

Bubble generating device 336 generates bubbles in the hydrogen water in hydrogen water tank 330. Bubble generating device 336 is not particularly limited and may include, for example, an ultrasonic generating device. The ultrasonic generating device may have, for example, an ultrasonic transducer. When bubble generating device 336 is activated, micron-sized bubbles are generated in the hydrogen water.

The substrate processing apparatus 100 includes ozone water pipes 910a and 910b, hydrogen water pipes 920a and 920b, and valves 46 and 56 described below. Ozone water pipes 910a and 910b supply ozone water from ozone water tank 320 to at least one of nozzles 44 and 54. Hydrogen water pipes 920a and 920b supply hydrogen water from hydrogen water tank 330 to at least one of nozzles 44 and 54. Valve 46 and 56 switch the cleaning fluid supplied to at least one of nozzles 44 and 54.

In the first embodiment, ozone water piping 910a supplies ozone water from ozone water tank 320 to nozzle 44. Ozone water piping 910b supplies ozone water from ozone water tank 320 to nozzle 54. Hydrogen water piping 920a supplies hydrogen water from hydrogen water tank 330 to nozzle 44. Hydrogen water piping 920b supplies hydrogen water from hydrogen water tank 330 to nozzle 54. Valve 46 switches the cleaning fluid supplied to nozzle 44. Valve 56 switches the cleaning fluid supplied to nozzle 54. The composition of ozone water piping 910a, 910b, and hydrogen water piping 920a and 920b will be described below.

The substrate processing apparatus 100 includes piping 341, a heater 342, a pump 343, a filter 344, a flow meter 345, and a valve 346. Piping 341 is connected to an ozone water tank 320. Piping 341 forms a flow path for supplying ozone water from the ozone water tank 320 to the substrate processing unit 10. In a first embodiment, piping 341 connects the ozone water tank 320 to the processing liquid tank 120. Also in the first embodiment, piping 341 connects the ozone water tank 320 to a first cleaning liquid supply unit 40. Also, piping 341 connects the ozone water tank 320 to a second cleaning liquid supply unit 50. The heater 342, pump 343, filter 344, flow meter 345, and valve 346 are installed in piping 341.

Heater 342 heats the liquid passing through pipe 341. In the first embodiment, heater 342 heats ozone water passing through pipe 341 to a specified temperature.

Pump 343 delivers ozone water from ozone water tank 320 toward substrate processing unit 10.

Filter 344 is installed on piping 341. Filter 344 can be installed and removed relative to piping 341. When filter 344 is installed on piping 341, ozone water passes through filter 344. On the other hand, filter 344 can be removed from piping 341. Therefore, if filter 344 deteriorates, filter 344 can be replaced.

Filter 344 filters the cleaning fluid passing through piping 341. Filter 344 may have a porous shape, for example. Filter 344 allows the liquid components of the cleaning fluid to pass through. On the other hand, filter 344 captures particles contained in the cleaning fluid. Furthermore, the particles may be solids, for example. The particles are not particularly limited and may include, for example, resins or metals.

Flow meter 345 measures the flow rate of ozone water passing through pipe 341.

Valve 346 opens and closes the flow path within pipe 341. Valve 346 regulates the opening degree of pipe 341, thereby adjusting the flow rate of ozone water through pipe 341. Furthermore, valve 346 may have, for example, the same structure as valve 312.

The substrate processing apparatus 100 includes piping 351, a heater 352, a pump 353, a filter 354, a flow meter 355, and a valve 356. Piping 351 is connected to a hydrogen water tank 330. Piping 351 forms a flow path for supplying hydrogen water from the hydrogen water tank 330 to the substrate processing unit 10. In a first embodiment, piping 351 connects the hydrogen water tank 330 to the processing liquid tank 120. Also in the first embodiment, piping 351 connects the hydrogen water tank 330 to the first cleaning liquid supply unit 40. Also, piping 351 connects the hydrogen water tank 330 to the second cleaning liquid supply unit 50. Heater 352, pump 353, filter 354, flow meter 355 and valve 356 are installed in piping 351.

Heater 352 heats the liquid passing through pipe 351. In the first embodiment, heater 352 heats hydrogen water passing through pipe 351 to a specified temperature.

Pump 353 delivers hydrogen water from hydrogen tank 330 toward substrate processing unit 10.

Filter 354 is installed on pipe 351. Filter 354 can be installed and removed relative to pipe 351. When filter 354 is installed on pipe 351, hydrogen water passes through filter 354. On the other hand, filter 354 can be removed from pipe 351. Therefore, if filter 354 deteriorates, filter 354 is replaced. Furthermore, filter 354 is configured, for example, similarly to filter 344.

Flow meter 355 measures the flow rate of hydrogen water passing through pipe 351.

Valve 356 opens and closes the flow path within pipe 351. Valve 356 adjusts the opening degree of pipe 351, thereby adjusting the flow rate of hydrogen water through pipe 351. Furthermore, valve 356 may have the same structure as valve 312, for example.

The substrate processing apparatus 100 includes a waste liquid tank 360, piping 361a, piping 361b, valve 362a, and valve 362b. The waste liquid tank 360 contains liquid discharged from the ozone water tank 320 and the hydrogen water tank 330.

Pipe 361a connects ozone tank 320 and waste liquid tank 360. Pipe 361a discharges the liquid in ozone tank 320 to waste liquid tank 360.

Valve 362a is configured in pipe 361a. Valve 362a opens and closes the flow path within pipe 361a. Valve 362a regulates the opening degree of pipe 361a, thereby adjusting the flow rate of liquid passing through pipe 361a. Furthermore, valve 362a may have, for example, the same structure as valve 312.

Pipe 361b connects hydrogen water tank 330 and waste liquid tank 360. Pipe 361b drains the liquid in hydrogen water tank 330 to waste liquid tank 360.

Valve 362b is configured in pipe 361b. Valve 362b opens and closes the flow path within pipe 361b. Valve 362b regulates the opening degree of pipe 361b, thereby adjusting the flow rate of liquid passing through pipe 361b. Furthermore, valve 362b may have, for example, the same structure as valve 312.

Furthermore, in the first embodiment, the substrate processing apparatus 100 further includes a return pipe 61, a return pipe 62, a valve 63, and a valve 64.

Return piping 61 connects piping 341 to ozone water tank 320. Return piping 61 returns ozone water from piping 341 to ozone water tank 320.

Valve 63 is configured in return pipe 61. Valve 63 opens and closes the flow path within return pipe 61. Valve 63 adjusts the opening degree of return pipe 61, thereby adjusting the flow rate of ozone water through return pipe 61. Furthermore, valve 63 may have, for example, the same structure as valve 312.

The return pipe 62 connects pipe 351 to hydrogen water tank 330. The return pipe 62 returns hydrogen water from pipe 351 to hydrogen water tank 330.

Valve 64 is configured in return pipe 62. Valve 64 opens and closes the flow path within return pipe 62. Valve 64 adjusts the opening degree of return pipe 62, thereby adjusting the flow rate of hydrogen water through return pipe 62. Furthermore, valve 64 may have, for example, the same structure as valve 312.

Next, the first cleaning fluid supply unit 40 and the second cleaning fluid supply unit 50 will be further explained.

The piping 42 of the first cleaning fluid supply unit 40 includes a first piping 42a, a second piping 42b, and a common piping 42c. The first piping 42a connects piping 341 to valve 46. The first piping 42a supplies ozone water from piping 341 to valve 46. The second piping 42b connects piping 351 to valve 46. The second piping 42b supplies hydrogen water from piping 351 to valve 46.

The shared piping 42c supplies ozone water and hydrogen water to the nozzle 44 from the valve 46. In the first embodiment, the shared piping 42c supplies ozone water and hydrogen water to the nozzle 44 separately. That is, the shared piping 42c does not supply ozone water and hydrogen water to the nozzle 44 simultaneously. The shared piping 42c supplies only one of ozone water and hydrogen water to the nozzle 44, or only the other of ozone water and hydrogen water to the nozzle 44.

Valve 46 supplies ozone water and hydrogen water to the common piping 42c. In the first embodiment, valve 46 supplies ozone water and hydrogen water separately to the common piping 42c. That is, valve 46 does not supply ozone water and hydrogen water to the common piping 42c simultaneously. Valve 46 supplies only one of ozone water and hydrogen water to the common piping 42c, or only the other of ozone water and hydrogen water to the common piping 42c.

Specifically, valve 46 may include, for example, a multi-port valve. A multi-port valve may have, for example, a plurality of valves respectively connected to a plurality of pipes. Valve 46 is capable of opening at least one flow path in the first pipe 42a and the second pipe 42b. In the first embodiment, valve 46 is capable of opening one flow path in the first pipe 42a and the second pipe 42b. That is, in the first embodiment, valve 46 is capable of setting the first pipe 42a and the second pipe 42b to both open and closed, both closed and open, or both closed and closed.

The piping 52 of the second cleaning fluid supply unit 50 includes a first piping 52a, a second piping 52b, and a common piping 52c. The first piping 52a connects piping 341 to valve 56. The first piping 52a supplies ozone water from piping 341 to valve 56. The second piping 52b connects piping 351 to valve 56. The second piping 52b supplies hydrogenated water from piping 351 to valve 56.

The shared piping 52c supplies ozone water and hydrogen water to the nozzle 54 from valve 56. In the first embodiment, the shared piping 52c supplies ozone water and hydrogen water to the nozzle 54 separately. That is, the shared piping 52c does not supply ozone water and hydrogen water to the nozzle 54 simultaneously. The shared piping 52c supplies only one of ozone water and hydrogen water to the nozzle 54, or only the other of ozone water and hydrogen water to the nozzle 54.

Valve 56 supplies ozone water and hydrogen water to the common piping 52c. In the first embodiment, valve 56 supplies ozone water and hydrogen water separately to the common piping 52c. That is, valve 56 does not supply ozone water and hydrogen water to the common piping 52c simultaneously. Valve 56 supplies only one of ozone water and hydrogen water to the common piping 52c, or only the other of ozone water and hydrogen water to the common piping 52c.

Specifically, valve 56 may include, for example, a multi-port valve. A multi-port valve may have, for example, a plurality of valves respectively connected to a plurality of pipes. Valve 56 is capable of opening at least one flow path in the first pipe 52a and the second pipe 52b. In the first embodiment, valve 56 is capable of opening one flow path in the first pipe 52a and the second pipe 52b. That is, in the first embodiment, valve 56 is capable of setting the first pipe 52a and the second pipe 52b to both open and closed, both closed and open, or both closed and closed.

In the first embodiment, nozzles 44 and 54 simultaneously supply cleaning fluid to the substrate W. Specifically, the control unit 102 supplies cleaning fluid to nozzles 44 and 54 by simultaneously opening valves 46 and 56. Furthermore, in this embodiment, simultaneously supplying liquid to the substrate W means that the timing of liquid supply to the substrate W overlaps. That is, simultaneously supplying liquid to the substrate W does not mean starting liquid supply to the substrate W at the same time. Also, simultaneously supplying liquid to the substrate W does not mean stopping liquid supply to the substrate W at the same time.

Furthermore, at least one of nozzles 44 and 54 supplies ozone water and hydrogen water to the substrate W. Specifically, the control unit 102 controls at least one of valves 46 and 56 to supply both ozone water and hydrogen water to the substrate W.

Furthermore, in the first embodiment, nozzle 44 supplies one of ozone water and hydrogen water to the upper surface Wa of substrate W, while simultaneously, nozzle 54 supplies the other of ozone water and hydrogen water to the lower surface Wb of substrate W. Specifically, in the first embodiment, nozzle 44 supplies hydrogen water to the upper surface Wa of substrate W, while simultaneously, nozzle 54 supplies ozone water to the lower surface Wb of substrate W.

In the first embodiment, an ozone water supply pipe 910a, consisting of pipe 341, first pipe 42a, and common pipe 42c, supplies ozone water from ozone water tank 320 to nozzle 44. Furthermore, an ozone water supply pipe 910b, consisting of pipe 341, first pipe 52a, and common pipe 52c, supplies ozone water from ozone water tank 320 to nozzle 54.

Furthermore, a hydrogen water supply pipe 920a, consisting of pipe 351, second pipe 42b, and common pipe 42c, supplies hydrogen water from hydrogen water tank 330 to nozzle 44. Also, a hydrogen water supply pipe 920b, consisting of pipe 351, second pipe 52b, and common pipe 52c, supplies hydrogen water from hydrogen water tank 330 to nozzle 54.

In the first embodiment, as described above, nozzles 44 and 54 supply ozone water from ozone water tank 320 and hydrogen water from hydrogen water tank 330 to the substrate W. Here, ozone water and hydrogen water are water-based liquids; therefore, unlike the use of ammonia or similar substances as cleaning solutions, the cleaning solution can be prevented from turning into particles during the subsequent drying process. Thus, particle contamination of the substrate W can be prevented.

Furthermore, by using ozone water and hydrogen water as cleaning solutions, the amount of cleaning solution used can be reduced compared to using ammonia water or other chemical solutions. In the first embodiment, the amount of cleaning solution used when cleaning the substrate W can be zero.

Furthermore, as described above, the substrate processing apparatus 100 includes: a nozzle 44 that supplies at least one of ozone water and hydrogen water to the upper surface Wa of the substrate W; and a nozzle 54 that supplies at least the other of ozone water and hydrogen water to the lower surface Wb of the substrate W. Therefore, for example, corrosion of the upper surface Wa or the lower surface Wb of the substrate W can be suppressed by using hydrogen water, and particles on the lower surface Wb of the substrate W can be removed by using ozone water.

Furthermore, as described above, nozzles 44 and 54 simultaneously supply cleaning fluid to the substrate W. Therefore, it is possible to prevent either ozone water or hydrogen water from circulating to the lower surface Wb of the substrate W, or the other of ozone water and hydrogen water from circulating to the upper surface Wa of the substrate W.

Furthermore, as described above, at least one of nozzles 44 and 54 supplies ozone water and hydrogen water to the substrate W. Therefore, at least one of the upper surface Wa and lower surface Wb of the substrate W can be cleaned using both ozone water and hydrogen water. Moreover, since the cleaning fluid is switched by valve 46 (or valve 56), it is not necessary to separately provide a nozzle for supplying ozone water to the upper surface Wa of the substrate W and a nozzle for supplying hydrogen water. Therefore, it is possible to prevent an increase in the number of components and to prevent the device configuration from becoming complex.

Furthermore, as described above, nozzle 44 supplies hydrogen-rich water to the upper surface Wa of the substrate W, and nozzle 54 supplies ozone-rich water to the lower surface Wb of the substrate W. Therefore, corrosion of the upper surface Wa of the substrate W can be suppressed, and particles on the lower surface Wb of the substrate W can be removed. This configuration is particularly effective when cleaning substrate W on which a metal film is formed on the upper surface Wa.

Furthermore, as described above, a bubble generating device 336 for generating bubbles in hydrogen water is provided in the substrate processing apparatus 100. Therefore, cleaning can be performed by the chemical action generated by hydrogen water and the physical action generated by bubbles, thereby improving the cleaning power.

Next, the substrate processing apparatus 100 of the first embodiment will be described with reference to Figures 1 to 4. Figure 4 is a block diagram of the substrate processing apparatus 100 of the first embodiment.

As shown in Figure 4, the control device 101 controls various operations of the substrate processing device 100. The control device 101 controls the transfer robot IR, the center robot CR, the substrate holding unit 20, the processing liquid supply unit 30, the first cleaning liquid supply unit 40, the second cleaning liquid supply unit 50, the heaters 342 and 352, the pumps 343 and 353, and various valves. Specifically, the control device 101 controls the transport robot IR, the central robot CR, the substrate holding unit 20, the processing fluid supply unit 30, the first cleaning fluid supply unit 40, the second cleaning fluid supply unit 50, the heaters 342 and 352, the pumps 343 and 353, and various valves by sending control signals to the transport robot IR, the central robot CR, the substrate holding unit 20, the processing fluid supply unit 30, the first cleaning fluid supply unit 40, the second cleaning fluid supply unit 50, the heaters 342 and 352, the pumps 343 and 353, and various valves.

More specifically, the control unit 102 controls the transfer robot IR to transfer the substrate W.

The control unit 102 controls the central robot CR to transfer substrates W. For example, the central robot CR receives unprocessed substrates W and moves them into any one of the plurality of substrate processing units 10. Also, the central robot CR receives processed substrates W from the substrate processing unit 10 and moves them out.

The control unit 102 controls the substrate holding unit 20 to control the start of rotation of the substrate W, the change of rotation speed, and the stop of rotation of the substrate W. For example, the control unit 102 can control the substrate holding unit 20 to change the rotation speed of the substrate holding unit 20. Specifically, the control unit 102 can change the rotation speed of the substrate W by changing the rotation speed of the electric motor 24 of the substrate holding unit 20.

The control unit 102 can control valves 36, 46, 56, 63, 64, 312, 322, 332, 346, 356, 362a, and 362b to switch their states to open and closed. Specifically, the control unit 102 can allow liquid to pass through or not pass through the piping 32 by setting valve 36 to an open or closed state. Similarly, the control unit 102 can control the flow of liquid in pipes 42, 52, return pipes 61, 62, 311, 321, 331, 341, 356, 362a and 361b by setting valves 46, 56, 63, 64, 312, 322, 332, 346, 356, 362a and 362b to open or closed.

The control unit 102 controls the heaters 342 and 352 to heat the liquid passing through the pipes 341 and 351.

The control unit 102 controls pumps 343 and 353 to deliver the liquids in the ozone tank 320 and hydrogen tank 330 downstream. Specifically, the control unit 102 drives pump 343 to deliver ozone water from the ozone tank 320 toward nozzles 44 and 54. Similarly, the control unit 102 drives pump 353 to deliver hydrogen water from the hydrogen tank 330 toward nozzles 44 and 54.

In the first embodiment, as described above, the control device 101 controls various operations of the board processing device 100. The control device 101 controls the electrolysis unit 310 and the bubble generating device 336. Specifically, the control device 101 controls the electrolysis unit 310 and the bubble generating device 336 by sending control signals to them.

More specifically, the control unit 102 controls the electrolysis unit 310 to electrolyze pure water to generate ozone water and hydrogen water. The generated ozone water and hydrogen water are supplied to the ozone water tank 320 and the hydrogen water tank 330, respectively.

The control unit 102 controls the bubble generating device 336 to generate bubbles in the hydrogen water tank 330.

Furthermore, the control unit 102 sends the measurement results of flow meters 328, 338, 345, 355, first concentration meter 325, and second concentration meter 335.

Next, the substrate processing method of the substrate processing apparatus 100 according to the first embodiment will be described with reference to FIG. 5. FIG. 5 is a flowchart showing the substrate processing method of the substrate processing apparatus 100 according to the first embodiment. The substrate processing method of the substrate processing apparatus 100 includes steps S1 to S7. Steps S1 to S7 are performed by the control unit 102. Furthermore, step S1 is an example of the "forming process" of the present invention. Step S6 is an example of the "cleaning process" of the present invention.

As shown in Figure 5, in step S1, the control unit 102 electrolyzes pure water to generate ozone water and hydrogen water as cleaning fluid. Specifically, the control unit 102 supplies pure water to the electrolysis unit 310 by switching valve 312 from a closed state to an open state. Under the control of the control unit 102, the electrolysis unit 310 electrolyzes the pure water to generate ozone water and hydrogen water. The generated ozone water is contained in the ozone water tank 320 through piping 329. Similarly, the generated hydrogen water is contained in the hydrogen water tank 330 through piping 339.

Next, in step S2, the control unit 102 supplies purified water to the ozone water tank 320. Specifically, the control unit 102 supplies purified water to the ozone water tank 320 based on the concentration control valve 322 of the ozone water in the ozone water tank 320. At this time, the concentration of ozone water in the ozone water tank 320 is adjusted to be lower than the concentration of ozone water supplied from the electrolysis unit 310 to the piping 329.

Next, in step S3, the control unit 102 supplies purified water to the hydrogen water tank 330. Specifically, the control unit 102 supplies purified water to the hydrogen water tank 330 based on the concentration control valve 332 of the hydrogen water in the hydrogen water tank 330. At this time, the concentration of hydrogen water in the hydrogen water tank 330 is adjusted to be lower than the concentration of hydrogen water supplied from the electrolysis unit 310 to the piping 339.

Subsequently, in step S4, the control unit 102 generates bubbles in the hydrogen water in the hydrogen water tank 330. Specifically, under the control of the control unit 102, the bubble generating device 336 generates bubbles in the hydrogen water in the hydrogen water tank 330.

Next, in step S5, the control unit 102 processes the substrate W. Specifically, the control unit 102 rotates the substrate W via the substrate holding unit 20. Thus, the substrate W begins to rotate. The rotation speed of the substrate W is not particularly limited, for example, it is 300 rpm or more and 800 rpm or less.

Next, the control unit 102 supplies treatment fluid to the upper surface Wa of the substrate W, which is rotated by the substrate holding unit 20, through the nozzle 34. At the same time, the control unit 102 supplies ozone water to the lower surface Wb of the substrate W through the nozzle 54. That is, the treatment fluid and ozone water are supplied to the substrate W simultaneously. Furthermore, in the first embodiment, the control unit 102 supplies SC1 to the upper surface Wa of the substrate W through the nozzle 34.

Furthermore, after a specified time has elapsed since the start of supplying the treatment fluid to the substrate W, the control unit 102 stops supplying the treatment fluid and ozone water. Moreover, in the first embodiment, ozone water is also supplied to the lower surface Wb of the substrate W in the next step S6, so the supply of ozone water can also be kept from stopping.

Next, in step S6, the control unit 102 supplies at least one of ozone water and hydrogen water to the upper surface Wa of the substrate W, and supplies at least the other of ozone water and hydrogen water to the lower surface Wb of the substrate W. In the first embodiment, the control unit 102 supplies hydrogen water to the upper surface Wa of the substrate W and ozone water to the lower surface Wb of the substrate W. Specifically, the control unit 102 supplies hydrogen water to the upper surface Wa of the substrate W through the nozzle 44 for the substrate W, which is rotating by the substrate holding part 20. At the same time, the control unit 102 supplies ozone water to the lower surface Wb of the substrate W through the nozzle 54. That is, hydrogen water and ozone water are supplied to the substrate W simultaneously. Furthermore, the rotation speed of the substrate W in step S6 is not particularly limited, for example, it is 300 rpm or more and 1200 rpm or less.

Furthermore, after a specified time has elapsed since the supply of hydrogen water to substrate W has begun, the control unit 102 stops supplying both hydrogen water and ozone water.

Next, in step S7, the control unit 102 dries the substrate W. Specifically, the control unit 102, through the substrate holding unit 20, sets the rotation speed of the substrate W to be higher than the rotation speed in step S6. This discharges hydrogen water and ozone water from the substrate W. The discharged hydrogen water and ozone water are collected, for example, by the first protective cover 81. Furthermore, the rotation speed of the substrate W in step S7 is not particularly limited, for example, it is between 1500 rpm and 2500 rpm.

Furthermore, after a specified time has elapsed following the increase in the rotation speed of the substrate W, the control unit 102 stops the rotation of the substrate W.

The processing of substrate W is concluded in the manner described above. Furthermore, in the first embodiment, an example is shown where the second pure water supply process (step S3) is performed after the first pure water supply process (step S2), but the invention is not limited thereto. For example, the first pure water supply process may be performed after the second pure water supply process, or the first and second pure water supply processes may be performed in parallel.

(Second Embodiment) The substrate processing method of the substrate processing apparatus 100 according to the second embodiment of the present invention will be described with reference to FIG. 6. FIG. 6 is a flowchart showing the substrate processing method of the substrate processing apparatus 100 according to the second embodiment. In the second embodiment, unlike the first embodiment, an example of switching the cleaning solution supplied to the lower surface Wb of the substrate W in the cleaning process (step S6) will be described. In the second embodiment, step S6 includes steps S61 and S62. Furthermore, the configuration of the substrate processing apparatus 100 in the second embodiment is the same as that in the first embodiment.

As shown in Figure 6, steps S1 to S5 are the same as in the first implementation method.

Then, in step S6, steps S61 (first cleaning step) and S62 (second cleaning step) are performed.

In step S61, nozzle 44 supplies one of ozone water and hydrogen water to the upper surface Wa of substrate W, while nozzle 54 supplies the other of ozone water and hydrogen water to the lower surface Wb of substrate W. In the second embodiment, nozzle 44 supplies hydrogen water to the upper surface Wa of substrate W, while nozzle 54 supplies ozone water to the lower surface Wb of substrate W. Specifically, control unit 102 supplies hydrogen water from nozzle 44 to the upper surface Wa of substrate W via control valves 46 and 56, while simultaneously supplying ozone water from nozzle 54 to the lower surface Wb of substrate W.

Furthermore, after a specified time has elapsed since the hydrogen supply to the substrate W has begun, the control unit 102 proceeds to step S62.

Next, in step S62, valve 56 switches the cleaning fluid supplied to nozzle 54, thereby allowing nozzles 44 and 54 to simultaneously supply either ozone water or hydrogen water to the substrate W. In the second embodiment, valve 56 switches the cleaning fluid supplied to nozzle 54 from ozone water to hydrogen water, thereby allowing nozzles 44 and 54 to simultaneously supply hydrogen water to the substrate W. Specifically, control unit 102 controls valve 56 to switch the cleaning fluid supplied to nozzle 54 from ozone water to hydrogen water.

Furthermore, after a specified time has elapsed since the cleaning fluid supplied to the substrate W was switched, the control unit 102 stops supplying hydrogen water to the substrate W from the nozzles 44 and 54.

Then, step S7 is performed in the same manner as in the first embodiment.

The processing of substrate W is concluded in the manner described above.

The other substrate processing methods in the second embodiment are the same as those in the first embodiment.

In the second embodiment, as described above, nozzle 44 supplies one of ozone water and hydrogen water to the upper surface Wa of the substrate W, while simultaneously nozzle 54 supplies the other of ozone water and hydrogen water to the lower surface Wb of the substrate W. Subsequently, one of valves 46 and 56 switches the cleaning fluid supplied to nozzles 44 and 54, thereby allowing nozzles 44 and 54 to simultaneously supply one of ozone water and hydrogen water to the substrate W. Therefore, the same cleaning fluid can be used to clean both the upper surface Wa and the lower surface Wb of the substrate W. Thus, even when the cleaning fluid circulates from the upper surface Wa to the lower surface Wb or from the lower surface Wb to the upper surface Wa, adverse effects on the substrate W can be suppressed.

Specifically, in the second embodiment, nozzle 44 supplies hydrogen-water to the upper surface Wa of the substrate W, while simultaneously nozzle 54 supplies ozone-water to the lower surface Wb of the substrate W. Subsequently, valve 56 switches the cleaning solution supplied to nozzle 54 from ozone-water to hydrogen-water, thereby allowing both nozzles 44 and 54 to simultaneously supply hydrogen-water to the substrate W. Therefore, corrosion of the upper surface Wa and lower surface Wb of the substrate W can be suppressed, and adverse effects on the substrate W due to cleaning solution circulation can be prevented.

The other effects of the second implementation are the same as those of the first implementation.

(Third Embodiment) Referring to FIG. 7, the substrate processing method of the substrate processing apparatus 100 according to the third embodiment of the present invention will be described. FIG. 7 is a flowchart showing the substrate processing method of the substrate processing apparatus 100 according to the third embodiment. In the third embodiment, unlike the first and second embodiments, an example of switching the protective cover 80 receiving the cleaning solution in the drying process (step S7) will be described. In the third embodiment, step S7 includes steps S71 and S72. Furthermore, in the third embodiment, a part of the substrate processing method of the first embodiment shown in FIG. 5 will be modified, but a part of the substrate processing method of the second embodiment shown in FIG. 6 can also be modified. The configuration of the substrate processing apparatus 100 of the third embodiment is the same as that of the first embodiment.

As shown in Figure 7, steps S1 to S6 are the same as in the first embodiment. Furthermore, in steps S5 and S6, the liquid medicine and cleaning solution discharged from the substrate W are caught by the first protective cover 81.

Next, in step S7, steps S71 (protective cover switching process) and S72 (spin-drying process) are performed.

In step S71, the control unit 102 switches the protective cover 80 that receives the cleaning fluid discharged from the substrate W. Specifically, the control unit 102 lowers the rotation speed of the substrate W compared to the rotation speed of the substrate W in step S6. The rotation speed of the substrate W in step S71 is not particularly limited, for example, it is 10 rpm or more and 100 rpm or less.

Next, the control unit 102 lowers the first shield 81 vertically downwards. At this time, the rotation speed of the substrate W is relatively low, thus preventing the cleaning fluid discharged from the substrate W from splashing onto the first shield 81 and adhering to the substrate W or scattering around. Specifically, when the first shield 81 is lowered vertically downwards, the distance between the inner edge of the first shield 81 and the substrate W narrows as the inner edge passes the side of the substrate W, causing the cleaning fluid discharged from the substrate W to violently impact the inner edge. Therefore, when the first shield 81 is lowered vertically downwards, the cleaning fluid discharged from the substrate W becomes more likely to splash onto the first shield 81 and adhere to the substrate W or scatter around. However, in the third embodiment, as described above, the rotation speed of the substrate W is lower, thus preventing the cleaning liquid discharged from the substrate W from splashing onto the first protective cover 81 and adhering to the substrate W or scattering to the surroundings.

Next, in step S72, the control unit 102 sets the rotation speed of the substrate W to be higher than the rotation speed of the substrate W in step S71. This allows the cleaning fluid discharged from the substrate W to be caught by the second protective cover 82. The rotation speed of the substrate W in step S72 is not particularly limited, but it is preferably higher than the rotation speed of the substrate W in step S6. In the third embodiment, the rotation speed of the substrate W in step S72 is, for example, 1500 rpm or more and 2500 rpm or less.

Furthermore, after a specified time has elapsed following the increase in the rotation speed of the substrate W, the control unit 102 stops the rotation of the substrate W.

The processing of substrate W is concluded in the manner described above.

The other substrate processing methods in the third embodiment are the same as those in the first embodiment.

In the third embodiment, as described above, the shield 80 that receives the cleaning fluid discharged from the substrate W is switched on. Therefore, the second shield 82, which was not used in steps S5 and S6 in a dry state, can be used. Therefore, compared to the case where the first shield 81 is used, the area around the substrate W becomes dry, thus enabling efficient drying of the substrate W. Furthermore, the cleaning fluid and the treatment fluid (e.g., SC1) can be recycled separately.

The other effects of the third implementation are the same as those of the first and second implementations.

(Fourth Embodiment) The substrate processing method of the substrate processing apparatus 100 according to the fourth embodiment of the present invention will be described with reference to FIG. 8. FIG. 8 is a flowchart showing the substrate processing method of the substrate processing apparatus 100 according to the fourth embodiment. In the fourth embodiment, unlike the first to third embodiments, an example of setting a pre-cleaning step (step S11) will be described. In the fourth embodiment, the substrate processing method of the substrate processing apparatus 100 includes steps S1 to S5, step S11, step S6, and step S7. Steps S1 to S5, step S11, step S6, and step S7 are performed by the control unit 102. Furthermore, in the fourth embodiment, a portion of the substrate processing method of the first embodiment shown in FIG. 5 is modified for explanation. However, a portion of the substrate processing method of the second embodiment shown in FIG. 6 and a portion of the substrate processing method of the third embodiment shown in FIG. 7 can also be modified. The substrate processing apparatus 100 of the fourth embodiment has the same configuration as that of the first embodiment.

As shown in Figure 8, steps S1 to S5 are the same as in the first implementation method.

Next, in step S11, the control unit 102 cleans the substrate W. Specifically, the control unit 102 supplies ammonia water to the upper surface Wa of the substrate W. The ammonia water can be supplied, for example, from a nozzle (not shown) separately from the nozzles 34 and 44, or from the nozzle 34. Furthermore, the control unit 102 supplies ozone water to the lower surface Wb of the substrate W. At this time, the control unit 102 supplies both ammonia water and ozone water to the substrate W simultaneously. Moreover, the rotation speed of the substrate W in step S11 is not particularly limited, for example, it is between 300 rpm and 1200 rpm.

Furthermore, after a specified time has elapsed since the supply of ammonia to substrate W has begun, the control unit 102 stops supplying both ammonia and ozone. Moreover, in the fourth embodiment, ozone is also supplied to the lower surface Wb of substrate W in the following step S6, thus preventing the supply of ozone from being stopped.

Then, steps S6 and S7 are performed in the same manner as in the first embodiment.

The processing of substrate W is concluded in the manner described above.

The other substrate processing methods and effects of the fourth embodiment are the same as those of the first to third embodiments.

The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be implemented in various ways without departing from its spirit. Furthermore, various inventions can be formed by appropriately combining the plurality of constituent elements disclosed in the above embodiments. For example, some constituent elements may be deleted from all the constituent elements shown in the embodiments. Moreover, constituent elements of different embodiments may be appropriately combined. For ease of understanding, the drawings mainly show each constituent element in a schematic manner, and the thickness, length, number, spacing, etc. of each constituent element shown may differ from the actual values for the purpose of making drawings. Furthermore, the material, shape, and size of each component shown in the above embodiments are just examples and are not particularly limited. Various changes can be made within the scope of the effects of the present invention without substantially departing from them.

For example, in the first embodiment, an example is shown of supplying hydrogen water to the upper surface Wa of the substrate W and supplying ozone water to the lower surface Wb of the substrate W, but the invention is not limited thereto. For example, ozone water may also be supplied to the upper surface Wa of the substrate W and hydrogen water may be supplied to the lower surface Wb of the substrate W.

Furthermore, for example, in the second embodiment, an example is shown where hydrogen water is supplied to the upper surface Wa of the substrate W, and simultaneously ozone water is supplied to the lower surface Wb of the substrate W. Then, hydrogen water is supplied to both the upper surface Wa and the lower surface Wb of the substrate W. However, the invention is not limited to this. For example, one of ozone water and hydrogen water may be supplied to the upper surface Wa of the substrate W, and simultaneously, the other of ozone water and hydrogen water may be supplied to the lower surface Wb of the substrate W. Then, ozone water may be supplied to both the upper surface Wa and the lower surface Wb of the substrate W.

Furthermore, in embodiments 1 to 4, examples are shown where nozzles 44 and 54 are configured to supply ozone water and hydrogen water to the substrate W, but the invention is not limited thereto. Nozzle 44 may also be configured to supply only one of ozone water and hydrogen water to the substrate W. Similarly, nozzle 54 may also be configured to supply only the other of ozone water and hydrogen water to the substrate W.

Furthermore, in embodiments 1 to 4, an example is shown where a nozzle 44 is provided to supply cleaning fluid to the upper surface Wa of the substrate W, and a nozzle 54 is provided to supply cleaning fluid to the lower surface Wb of the substrate W. However, the present invention is not limited to this. For example, only a nozzle 44 for supplying cleaning fluid to the upper surface Wa of the substrate W may be provided. In this case, the nozzle 44 may also be configured to supply both ozone water and hydrogen water to the substrate W.

Furthermore, in embodiments 1 to 4, examples are shown where return pipes 61 and 62 are provided to return the cleaning fluid from the treatment liquid tank 120 to the ozone water tank 320 and the hydrogen water tank 330, but the invention is not limited thereto. For example, the cleaning fluid may not be returned from the treatment liquid tank 120 to the ozone water tank 320 and the hydrogen water tank 330.

Furthermore, in embodiments 1 to 4, an example is shown where a return piping for the cleaning fluid used for cleaning is not provided from the substrate processing unit 10 back to the ozone tank 320 and the hydrogen tank 330; however, the invention is not limited to this. For example, a return piping for the cleaning fluid used for cleaning to return from the substrate processing unit 10 back to the ozone tank 320 and the hydrogen tank 330 may also be provided.

Furthermore, in embodiments 1 to 4, an example is shown where ozone water is supplied to the lower surface Wb of the substrate W in steps S5 and S6, but the invention is not limited thereto. For example, pure water can also be supplied to the lower surface Wb of the substrate W in steps S5 and S6.

Furthermore, in embodiments 1 to 4, an example was shown where the cleaning fluid in the treatment tank 120 did not circulate. However, the invention is not limited to this and can also be configured to allow the cleaning fluid to circulate within the treatment tank 120. For example, a branch line from piping 341 can be provided to return ozone water to the ozone water tank 320. Similarly, a branch line from piping 351 can be provided to return hydrogen water to the hydrogen water tank 330.

Furthermore, examples of providing a bubble generating device 336 are shown in embodiments 1 to 4, but the present invention is not limited thereto. For example, the bubble generating device 336 may not be provided.

Furthermore, in embodiments 1 to 4, an example is shown of the bubble generating device 336 generating bubbles in hydrogen water within the hydrogen water tank 330, but the present invention is not limited thereto. For example, the bubble generating device 336 can also generate bubbles in hydrogen water within a piping.

Furthermore, in the first embodiment, an example is shown where no tank is provided downstream of the ozone water tank 320 and the hydrogen water tank 330, but the invention is not limited to this. For example, a tank for containing ozone water may also be provided downstream of the ozone water tank 320. Similarly, a tank for containing hydrogen water may also be provided downstream of the hydrogen water tank 330.

Furthermore, in the above explanations, for example, the expression "A above B below" means "A above and B below". The expression "greater than A and less than B" means "greater than A and less than B". The expression "higher than A and lower than B" means "higher than A and lower than B". Similarly, other expressions such as "concentration higher than A and lower than B" also mean "concentration higher than A and lower than B". [Industrial Availability]

This invention can be better used in substrate processing apparatus and substrate processing method.

10: Substrate Processing Unit 12: Chamber 20: Substrate Holding Section 21: Rotating Base 22: Clamp Component 23: Shaft 24: Electric Motor 25: Housing 30: Processing Fluid Supply Section 32: Piping 34: Nozzle 36: Valve 40: First Cleaning Fluid Supply Section 42: Piping 42a: First Piping 42b: Second Piping 42c: Common Piping 44: Nozzle (First Nozzle) 46: Valve (Switching Valve) 50: Second Cleaning Fluid Supply Section 52: Piping 52a: First Piping 52b: Second Piping 52c: Common Piping 54: Nozzle (Second Nozzle) 56: Valve (Switching Valve) 61: Return Piping 62: Return Piping 63: Valve 64: Valve 80: Protective Cover 81: First Protective Cover 82: Second Protective Cover 100: Substrate Processing Device 101: Control Device 102: Control Unit 104: Memory Unit 110: Processing Liquid Tank 120: Processing Liquid Tank 310: Electrolysis Unit 311: Piping 312: Valve 320: Ozone Water Tank 321: Piping 322: Valve 325: First Concentration Meter 328: Flow Meter 329: Piping 330: Hydrogen Water Tank 331: Piping 332: Valve 335: Second Concentration Meter 336: Bubble Generator 338: Flow Meter 339: Piping 341: Piping 342: Heater 343: Pump 344: Filter 345: Flow Meter 346: Valve 351: Piping 352: Heater 353: Pump 354: Filter 355: Flow Meter 356: Valve 360: Waste Liquid Tank 361a: Piping 361b: Piping 362a: Valve 362b: Valve 910a: Ozone Water Piping 910b: Ozone Water Piping 920a: Hydrogen water piping 920b: Hydrogen water piping Ax: Rotary shaft CR: Central robot IR: Transfer robot LP: Loading port S1: Step (Production process) S2: Step S3: Step S4: Step S5: Step S6: Step (Cleaning process) S7: Step S11: Step S61: Step S62: Step S71: Step S72: Step TW: Tower W: Substrate Wa: Upper surface Wb: Lower surface X: Axis Y: Axis Z: Axis

Figure 1 is a schematic top view of the substrate processing apparatus according to the first embodiment. Figure 2 is a schematic diagram of the substrate processing unit in the substrate processing apparatus according to the first embodiment. Figure 3 is a schematic diagram illustrating the piping configuration of the substrate processing apparatus. Figure 4 is a block diagram of the substrate processing apparatus according to the first embodiment. Figure 5 is a flowchart illustrating the substrate processing method of the substrate processing apparatus according to the first embodiment. Figure 6 is a flowchart illustrating the substrate processing method of the substrate processing apparatus according to the second embodiment. Figure 7 is a flowchart illustrating the substrate processing method of the substrate processing apparatus according to the third embodiment. Figure 8 is a flowchart illustrating the substrate processing method of the substrate processing apparatus according to the fourth embodiment.

10: Substrate Processing Unit 40: First Cleaning Solution Supply Unit 42: Piping 42a: First Piping 42b: Second Piping 42c: Common Piping 44: Nozzle (First Nozzle) 46: Valve (Switching Valve) 50: Second Cleaning Solution Supply Unit 52: Piping 52a: First Piping 52b: Second Piping 52c: Common Piping 54: Nozzle (Second Nozzle) 56: Valve (Switching Valve) 61: Return Piping 62: Return Piping 63: Valve 64: Valve 80: Protective Cover 100: Substrate Processing Device 110: Processing Liquid Tank 120: Processing Liquid Tank 310: Electrolysis Section 311: Piping 312: Valve 320: Ozone Water Tank 321: Piping 322: Valve 325: First Concentration Meter 328: Flow Meter 329: Piping 330: Hydrogen Water Tank 331: Piping 332: Valve 335: Second Concentration Meter 336: Bubble Generator 338: Flow Meter 339: Piping 341: Piping 342: Heater 343: Pump 344: Filter 345: Flow Meter 346: Valve 351: Piping 352: Heater 353: Pump 354: Filter 355: Flow Meter 356: Valve 360: Wastewater Tank 361a: Piping 361b: Piping 362a: Valve 362b: Valve 910a: Ozone Water Piping 910b: Ozone Water Piping 920a: Hydrogen Water Piping 920b: Hydrogen Water Piping W: Substrate

Claims (7)

A substrate processing apparatus includes: a substrate processing unit having a nozzle for supplying a cleaning solution to a substrate; an electrolysis unit for electrolyzing pure water to generate ozone water and hydrogen water as the cleaning solution; an ozone water tank containing the ozone water; and a hydrogen water tank containing the hydrogen water; and the nozzle supplies the ozone water from the ozone water tank and the hydrogen water from the hydrogen water tank to the substrate, the nozzle includes: a first nozzle supplying at least one of the ozone water and the hydrogen water to the upper surface of the substrate; and a second nozzle supplying at least the other of the ozone water and the hydrogen water to the lower surface of the substrate, The substrate processing apparatus includes: An ozone water piping system supplies ozone water from the ozone water tank to at least one of the first and second nozzles; a hydrogen water piping system supplies hydrogen water from the hydrogen water tank to at least one of the first and second nozzles; and a switching valve switches the cleaning fluid supplied to at least one of the first and second nozzles; and the first and second nozzles supply both the ozone water and the hydrogen water to the substrate. As in the substrate processing apparatus of claim 1, wherein one of the first nozzle and the second nozzle is the second nozzle, the first nozzle supplies one of the ozone-water and the hydrogen-water mixture to the upper surface of the substrate, while simultaneously, the second nozzle supplies the other of the ozone-water and the hydrogen-water mixture to the lower surface of the substrate. Then, the switching valve switches the cleaning fluid supplied to the second nozzle, thereby simultaneously supplying one of the ozone-water and the hydrogen-water mixture to the substrate by both the first nozzle and the second nozzle. As in the substrate processing apparatus of claim 2, the first nozzle supplies hydrogen-water to the upper surface of the substrate, while the second nozzle supplies ozone-water to the lower surface of the substrate. Then, the switching valve switches the cleaning solution supplied to the second nozzle from ozone-water to hydrogen-water, thereby simultaneously supplying hydrogen-water to the substrate by both the first and second nozzles. The substrate processing apparatus of any one of claims 1 to 3 is equipped with a bubble generating device for generating bubbles in the aforementioned hydrogen water. A substrate processing method includes: a generation step, which involves electrolyzing pure water to generate ozone water and hydrogen water as cleaning solutions; and a cleaning step, which involves cleaning the substrate using the ozone water and the hydrogen water; and in the generation step, the generated ozone water is contained in an ozone water tank, and the generated hydrogen water is contained in a hydrogen water tank; in the cleaning step, the ozone water in the ozone water tank is supplied to the substrate, and the hydrogen water in the hydrogen water tank is supplied to the substrate; in the cleaning step, at least one of the ozone water and the hydrogen water is supplied to the upper surface of the substrate, and at least the other of the ozone water and the hydrogen water is supplied to the lower surface of the substrate; in the cleaning step, the cleaning solution supplied to at least one of the upper and lower surfaces of the substrate is switched. In the above-described cleaning process, one of the ozone-water and the hydrogen-water solution is supplied to the upper surface of the substrate, while simultaneously the other of the ozone-water and the hydrogen-water solution is supplied to the lower surface of the substrate. Then, the cleaning solution supplied to the lower surface of the substrate is switched, thereby simultaneously supplying one of the ozone-water and the hydrogen-water solution to both the upper and lower surfaces of the substrate. As in the substrate processing method of claim 5, in the aforementioned cleaning process, hydrogenated water is supplied to the upper surface of the substrate, and simultaneously, ozone-soaked water is supplied to the lower surface of the substrate. Then, the cleaning solution supplied to the lower surface of the substrate is switched from ozone-soaked water to hydrogenated water, thereby simultaneously supplying hydrogenated water to both the upper and lower surfaces of the substrate. As in the substrate processing method of claim 5 or 6, bubbles are generated in the hydrogen water before the hydrogen water is supplied to the substrate.