TWI908237B - Charged particle beam device - Google Patents

Abstract

The purpose of this disclosure is to provide a charged particle beam device capable of simultaneously detecting signal electrons in two energy bands with significantly different energies. The charged particle beam device disclosed herein uses an interface provided by a processor to specify the energy bands of two or more secondary charged particles, and adjusts the operating parameters of the detection system to detect the specified energy bands separately (see Figure 1).

Description

Charged particle beam device

This invention relates to a charged particle beam device.

In the measurement and inspection of semiconductor devices with fine and three-dimensional layered structures, charged particle beam devices such as scanning electron microscopes (SEM) are used. A scanning electron microscope is a device that uses images obtained by scanning a sample with a focused electron beam to measure or inspect the sample. With the increasing complexity of modern semiconductor manufacturing processes, the number of areas requiring measurement and inspection has increased, leading to a strong demand for high-speed measurement and inspection equipment. Furthermore, the increasing complexity of semiconductor device structures makes it increasingly difficult to capture measurement and inspection areas with sufficient contrast, further increasing measurement and inspection time.

To shorten the measurement and inspection time using SEM, an effective method is to detect appropriate signal electrons in conjunction with the structure or shape of the observed pattern. Here, signal electrons refer to a general term for secondary charged particle lines generated by the interaction of primary electron beams with the sample. Generally, this includes secondary electrons, backscattered electrons, and Auger electrons. Furthermore, regarding generally known basic characteristics, the contrast of the image obtained using SEM depends partly on the energy of the signal electrons and partly on the emission angle (elevation angle, azimuth angle) from the sample.

For high-speed measurement and inspection, an effective method is to selectively detect signal electrons of appropriate energy or emission angle to emphasize the contrast of a portion of the observed object relative to its surroundings. For example, detecting low-energy signal electrons is sometimes effective when information about the surface of the sample is desired, while detecting high-energy signal electrons is sometimes effective when information about the interior of the sample, the bottom of holes, trenches, etc., is desired.

Regarding this purpose, Patent 1 discloses a method using a deflector to separate signal electrons from the primary electron wire, and a divider to separate the high-energy and low-energy beams of the separated secondary electrons. Patent 2 discloses a method in which signal electrons emitted from a sample are fed to the deflector, and then a beam splitter is used to select the energy of the signal electrons. Patent 3 discloses a method and GUI (Graphical User Interface) for selecting the energy band of signal electrons using a segmentation detector and an orbital simulator. (Prior Art Documents, Patent Documents )

Patent Document 1: Japanese Patent Application Publication No. 2006-261111 Patent Document 2: US10541103 B2 Patent Document 3: Japanese Patent Publication No. 5909547

The problem that the invention is intended to solve

In order to measure and inspect semiconductor devices with a wide variety of materials, structures, and shapes at high speed, it is sometimes necessary to simultaneously detect secondary electrons emitted from the sample with energies of several eV and backscattered electrons emitted from the sample with energies of hundreds to tens of keV. For example, defect inspection of semiconductor devices can often be achieved at high speed by simultaneously obtaining defect information located at the bottom of holes or trenches and three-dimensional information of the structure located at the outermost surface. However, in order to emphasize their contrast, the energies of the signal electrons that should be detected are significantly different from each other.

As described in Patents 1 and 2, energy selection of signal electrons can be achieved by combining a deflector to separate signal electrons and a beam splitter. However, if secondary electrons and backscattered electrons with significantly different energies are separated from the primary electron lines by a deflector, the difference in deflection angle caused by dispersion becomes very large, making it impossible to guide them to the beam splitter simultaneously and thus making appropriate energy selection impossible. Although Patent 3 discloses a method and GUI for selecting the energy bands of signal electrons by using a segmentation detector and an orbital simulator, it does not disclose a method for selecting two energy bands with significantly different energies, such as secondary electrons and backscattered electrons.

This invention was created in view of the aforementioned unsolved problems, aiming to provide a charged particle beam device capable of simultaneously detecting signal electrons in two energy bands with significantly different energies. Technical means for solving the problem.

The charged particle beam device disclosed herein uses an interface provided by a processor to specify the energy bands of two or more secondary charged particles, and adjusts the operating parameters of the detection system to detect the specified energy bands separately. Effects of the Invention

According to the charged particle beam device disclosed herein, signal electrons in two energy bands with significantly different energies can be detected simultaneously. As a result, the contrast at multiple points can be optimized simultaneously, thereby achieving high-speed measurement and detection.

<Implementation Method 1>

Figure 1 is a structural diagram of the charged particle beam device of Embodiment 1 disclosed herein. The purpose of the charged particle beam device disclosed herein is to simultaneously detect signal electrons of two energy bands with significantly different energies.

Primary electrons emitted from electron source 1 are accelerated by accelerating electrode 2 and then focused onto the object plane of object lens 7 by at least one focusing lens (focusing lenses 3 and 4 in Figure 1). Subsequently, primary electrons are focused onto sample 8 by object lens 7.

The signal electrons emitted from the sample 8 travel toward the electron source 1 and are separated from the primary electron optical axis 100 by the signal electron separation deflector 5. The signal electron separation deflector 5 can be an electrostatic deflector, a magnetic field deflector, or a Wien filter composed of an electrostatic deflector and a magnetic field deflector.

Figure 1 illustrates an example of the operation of the polarizer 5 for signal electron separation, showing the case where the signal electron track 201 of the first energy is aligned with the signal electron optical axis 200. However, under normal circumstances, the signal electron track 201 of the first energy must be aligned with the signal electron optical axis 200, and the angle between the signal electron track 201 and the primary electron optical axis 100 does not need to be a specific angle. The signal electron track 220 of the second energy is deflected at an angle different from that of the signal electron track 201 due to the dispersion generated by the polarizer 5 for signal electron separation.

The difference between the deflection angle of the first-energy signal electron orbit 201 and the deflection angle of the second-energy signal electron orbit 220 depends on the energy difference, the energy of the primary electron accelerated by the accelerating electrode 2, and the value of the negative voltage applied to the sample 8. It is not uncommon for the difference in deflection angles between the first-energy and second-energy signal electrons (e.g., secondary electrons and backscattered electrons) to be 10 degrees or more. When the orbital deviation caused by the difference in deflection angles is large compared to the size of the detection surface of the detector 9, it is impossible to detect these signal electrons simultaneously.

Therefore, in Embodiment 1, a dispersion correction element 6 is configured between the signal electrons and the detector 9 to change the passage state of the signal electrons. The signal electrons of the second energy, after their passage state has been adjusted, will pass through the signal electron orbit 210 of the second energy. The signal electron orbit 210 of the second energy will be biased, converged, or both by the dispersion correction element 6, and controlled to intersect the detection surface of the detector 9 with the signal electron orbit 201 of the first energy, or to have an orbital deviation to the extent that can be simultaneously detected by the detector 9. Through such control, signal electrons of two energy bands with significantly different energies can be detected simultaneously.

The dispersion correction element 6 can be a rotationally symmetric lens that is rotationally symmetric about the signal electron optical axis 200, or a multi-pole lens divided into a plurality of electrodes or magnetic poles. Alternatively, it can be a multi-segment deflector composed of a plurality of deflectors, or a Viin filter composed of an electrostatic deflector and a magnetic field deflector. Furthermore, it can be a combination of a rotationally symmetric lens and a deflector, or a lens and deflector can be combined in a multi-pole structure divided into a plurality of electrodes or magnetic poles for use.

As illustrated by the signal electron track 230 of the first energy, the signal electron track of the first energy can also be controlled by the dispersion correction element 6 to be subjected to a biasing effect, a converging effect, or both. In this case, the signal electron separator 5 is controlled so that the signal electron track 230 of the first energy can be detected by the detector 9, and the dispersion correction element 6 is controlled so that the signal electron track 210 of the second energy can be detected by the detector 9. By such control, the signal electron tracks with slightly different energies from the signal electron track 230 of the first energy, or the signal electron track 210 of the second energy, can be adjusted, and their detectability by the detector 9 can be controlled.

The deflector 5 to the detector 9 form a detection system for detecting secondary charged particles and can be controlled by the control element 400 described later. In the following embodiments, the components disposed between the deflector 5 and the detector 9 can also be configured as part of the detection system.

<Embodiment 2> Figure 2 is a configuration diagram of the charged particle beam device according to Embodiment 2 of this disclosure. This embodiment will illustrate a configuration example that simultaneously detects signal electrons of two energy bands with significantly different energies, and selectively detects them based on the emission angle of the signal electrons when emitted from the sample. In Figure 2, the detector 10 is positioned upstream of the detector 9 (closer to the sample 8).

In the case where the control described in Embodiment 1 allows the signal electron orbit 201 of the first energy and the signal electron orbit 210 of the second energy to be detected simultaneously by the detector 9, the signal electron orbits emitted from the sample at different emission angles will become the signal electron orbit 202 of the first energy and the signal electron orbit 211 of the second energy with different emission angles. These signal electron orbits are biased or converged by the dispersion correction element 6, or both, and once they reach the signal electron conversion device 11, new signal electrons are generated due to the interaction between the signal electron conversion device 11 and the signal electrons, and are detected by the detector 10. By providing holes or gaps in the signal electronics conversion component 11, it is possible to select a portion of the signal electronics that have reached the position of the signal electronics conversion component 11, which can be detected by the detector 9. With this configuration, the detector 9 can detect the signal electronics corresponding to the emission angle corresponding to the track of the signal electronics conversion component 11, while the detector 10 can detect signal electronics at other emission angles.

The detector 10 can be a ring or cylindrical detector, or it can be a structure divided into multiple parts. For example, in a rotationally symmetrical configuration of the signal electron optical axis 200, a structure divided into 4 or 8 parts can be used, thereby enabling selective detection of the emission angle, especially the azimuth angle, of the signal electrons from the sample. Alternatively, a signal detection function can be added to the signal electron conversion component 11. In this case, by dividing the signal electron conversion component 11 into multiple parts, selective detection of the emission angle can be performed.

<Implement 3> In Embodiment 3 disclosed herein, a more detailed configuration example of energy selection will be described when the signal electrons of the first and second energies are detected simultaneously as described in Embodiment 2. Although only the orbits of the signal electrons of the first and second energies are illustrated in Embodiments 1 and 2, in practice, detectors 9 and 10 may also detect signal electrons with other energies. For high-speed measurement and inspection of various semiconductor devices, an effective approach is to selectively detect only signal electrons of appropriate energies, emphasizing the contrast at the point of observation.

Figure 3 is a configuration diagram of the charged particle beam device of Embodiment 3. Figure 3 shows an example configuration targeting only signal electrons with desired energy. In Figure 3, a mesh electrode 12 is arranged upstream of detector 9 (closer to sample 8) and downstream of detector 10, and a mesh electrode 13 is arranged upstream of detector 10, and a negative voltage is applied to these electrodes. This negative voltage acts as an electric field barrier for the signal electrons, so only signal electrons with energy higher than the absolute value of the negative voltage will pass through mesh electrodes 12 and 13 and be detected by detectors 9 and 10.

As an example of a semiconductor inspection application using this method, the formation of an SEM image is described when secondary electrons are detected as signal electrons of the first energy and backscattered electrons are detected as signal electrons of the second energy. Generally, the number of secondary electrons is much greater than the number of backscattered electrons. Therefore, when no negative voltage is applied to the mesh electrodes 12 and 13, the secondary electrons in the signal electrons detected by detectors 9 and 10 are dominant, resulting in an SEM image containing a great deal of information originating from the secondary electrons. On the other hand, the energy of secondary electrons is much lower than that of backscattered electrons. Therefore, when a negative voltage is applied to the mesh electrodes 12 and 13, the secondary electrons are blocked by the electric field barrier and cannot be detected. This results in an SEM image containing a lot of information from backscattered electrons. In addition to this method, by using the selective detection method described in embodiment 2, which considers the selectivity of the emission angle of the signal electron conversion component 11, both the energy selection and the emission angle selection of the signal electrons can be taken into account. This allows for the optimization of contrast in the measurement and inspection of a wide variety of semiconductor devices.

In Figure 3, the signal-to-electronic conversion component 11 has a cylindrical section through which secondary charged particles will reach the detector 9. The mesh electrode 12 can also be designed to be positioned slightly forward from the inlet of the cylinder toward the sample 8, thereby filtering the secondary charged particles heading toward the detector 9.

Figure 4 is another configuration diagram of the charged particle beam device according to Embodiment 3. Figure 4 shows a configuration example with more detailed energy selection than that in Figure 3. In addition to the configuration described in Figure 3, the configuration in Figure 4 also includes an energy analyzer 14 positioned between detectors 10 and 9. Generally, in energy selection using the electric field barrier created by mesh electrodes, there is often insufficient energy resolution. In such cases, an effective approach is to use an energy analyzer 14, such as an electrostatic hemisphere, which has a higher energy resolution than the combination of mesh electrodes 12 and 13. Although Figure 4 illustrates the configuration of the energy analyzer 14 as a replacement for the mesh electrode 12 in Figure 3, it can also be used as a replacement for the mesh electrode 13. If necessary, multiple energy analyzers 14 can be configured when the detector 10 is divided into multiple units.

Figure 5 is another configuration diagram of the charged particle beam device according to Embodiment 3. In Figure 5, as an example of a configuration that does not implement the signal electron conversion component 11 to convert signal electrons, the detector 10 is configured to match the orbits of signal electrons with different emission angles. For example, the detector 10 is configured along the signal electron orbit 211. By using this configuration, higher speed and higher quantum efficiency signal electron detection can be achieved. Furthermore, even when using this configuration, energy selection can still be achieved by placing a mesh electrode 13 or an energy analyzer 14 upstream of the detector 10.

In Figure 5, multiple detectors 10 can be configured to correspond to multiple emission angles of the secondary charged particles. In this case, the potential of the mesh electrode 13 disposed at the front end of each detector 10 can also be adjusted individually. In this way, the emission angle of the secondary charged particles detected by the detector 10 can be selected.

<Embodiment 4> In Embodiment 4 of this disclosure, as an example of a means of selecting two different energy bands, a charged particle beam device will be described , having a user interface capable of selecting two energy types. Other configurations are the same as in Embodiments 1-3. The user interface, for example, can be provided by displaying a screen on a display via the control element 400 described in the embodiments described later. Figures 6-8 below will be described as examples of the user interface provided by the charged particle beam device of this embodiment.

Figure 6 illustrates a user interface with a slider 300. The slider 300 has handles (UI parts operable by the user at both ends of 301 and 302) that allow selection of two bands 301 and 302. Changing the handle width controls the components described in embodiments 1-3 (deflector 5, dispersion correction component 6, signal electron conversion component 11, mesh electrodes 12 and 13, energy analyzer 14, etc.; the same applies in Figures 7-8) to detect signal electrons in those bands. This allows for changing the detection bandwidth of each band. Using this user interface, the user can easily search for optimal observation conditions for each object being observed.

Figure 7 shows another example of the user interface in Embodiment 4. When searching for observation conditions of a sample with a three-dimensional structure, a user interface that allows selection of the emission angle of signal electrons as shown in Figure 7 for each of two different bands is sometimes effective. The control element 400 controls the elements described in the above embodiments (deflector 5, dispersion correction element 6, signal electron conversion component 11, and each mesh electrode) so that the signal electrons at the selected emission angle on the user interface can be detected.

When emphasizing contrast at the bottom of a hole or trench, a high angle is generally effective. Conversely, when emphasizing contrast at small differences in elevation on a surface, a middle or low angle is generally effective. The charge induced in the sample by irradiation with an electron beam varies significantly from sample to sample, and the resulting change in contrast can also have a substantial impact. For such samples, robust observation conditions can be easily sought by appropriately selecting two different band structures and emission angles.

The user interface in Figure 7 specifies the energy band of the secondary charged particles and also specifies their emission angle, so it can be used in configurations that can control them together. For example, this user interface can be used in the configurations illustrated in Figures 3 to 5.

Although only two detectors 10 are shown in Figure 5, when detecting more than three emission angles as shown in Figure 7, a corresponding number of detectors 10 must be configured. For example, one or more detectors 10 may be configured for each emission angle.

Figure 8 shows another example of the user interface in Embodiment 4. Besides Figure 7, when high-speed measurement and inspection are required, a user interface (first UI component and second UI component) as shown in Figure 8, which sets and selects two different bands and signal electron emission angles for each detector, is effective. By setting optimized conditions for each detector and each area to be observed, multiple images can be obtained simultaneously, resulting in high-speed device operation.

In Figure 8, slider 310 corresponds to a detector for detecting signal electrons of the first energy, and slider 311 corresponds to a detector for detecting signal electrons of the second energy. It is assumed that the signal electrons of the first energy are emitted at a high angle, and the signal electrons of the second energy are emitted at a medium angle; the emission angles detected by each detector are set accordingly. Control element 400 controls the components described in the above embodiments (e.g., deflector 5, dispersion correction element 6, signal electron conversion component 11) so that each detector can detect these emission angles and energy bands.

<Embodiment 5> Figure 9 is a configuration diagram of the charged particle beam device of Embodiment 5 of this disclosure. Figure 9 illustrates an example of simultaneously detecting signal electrons of two energy bands with significantly different energies using a user interface as shown in Embodiment 4, demonstrating an example of arranging a plurality of detectors 15 and 16 in suitable positions.

The dispersion generated when the signal electron orbit 201 of the first energy is separated from the primary electron optical axis 100 using the signal electron separator deflector 5 depends on the energy difference between the signal electron orbit 201 of the first energy and the signal electron orbit 220 of the second energy, the energy of the primary electron accelerated by the accelerating electrode 2, or the value of the negative voltage applied to the sample 8. By adjusting the energy of the primary electron accelerated by the accelerating electrode 2 and the value of the negative voltage applied to the sample 8, the orbital deviation caused by the difference in the deflection angle of the two energies to be detected simultaneously corresponds to the relative positions of the detectors 15 and 16, thereby enabling the simultaneous detection of signal electrons in two energy bands with significantly different energies.

<Embodiment 6> Figure 10 is a structural diagram of the charged particle beam device of Embodiment 6 of this disclosure. Figure 10 illustrates an example of the use of a position-sensitive detector 17, demonstrating the simultaneous detection of signal electrons with significantly different energy bands using a user interface as shown in Embodiment 4. The position-sensitive detector 17 is capable of detecting the size and position of each of the signal electron orbitals.

The position-sensitive detector 17 can be a CCD (Charge-Coupled Device) with multiple detection elements, or it can be a detector with detection elements divided into several to a dozen components. By enabling only the detection elements of the first energy signal electron track 201 and the second energy signal electron track 210, which are adjusted by the signal electron separation deflector 5, among the detection elements of the position-sensitive detector 17, the detection elements of two energy bands with significantly different energies can be detected simultaneously.

<Embodiment 7> Figure 11 is a structural diagram of the charged particle beam device of Embodiment 7 of this disclosure. Figure 11 illustrates an example of a device that simultaneously detects signal electrons of two energy bands with significantly different energies using a user interface as shown in Embodiment 4, without employing the deflector 5 for signal electron separation.

The configuration shown in Figure 11 replaces the polarizer 5 used for signal electron separation and includes detectors 18 and 19 with the primary electron optical axis 100 as the central axis. Detector 18 is positioned between the objective lens 7 and the sample 8. Detector 19 is positioned between the objective lens 7 and the condenser lens (in the example of Figure 11, the condenser lens 4 closest to the sample 8).

In the configuration of Figure 11, the signal electron orbitals 201 with the first energy and 210 with the second energy emitted from the sample are determined by the configuration and operating conditions of the objective lens 7 and the value of the negative voltage applied to the sample 8. Furthermore, the energy or emission angle of the signal electrons detected by detectors 18 and 19 depends not only on the signal electron orbitals but also on the configuration and size of detectors 18 and 19. By designing the device to accommodate the two energy bands to be detected simultaneously and the emission angles detected in each energy band, signal electrons from two energy bands with significantly different energies can be detected simultaneously.

By adjusting the voltage applied to the track control electrodes 20 arranged around the objective lens 7, the energy or emission angle of the signal electrons detected by the detector 19 can be controlled. Alternatively, it can be controlled by changing the energy of the primary electrons accelerated by the acceleration electrode 2 or the value of the negative voltage applied to the sample 8. Further energy selection can also be achieved by applying a voltage to the mesh electrode 22 located directly below the detector 19. The same energy selection can also be achieved by applying a voltage to the mesh electrode 21 located directly below the detector 18.

Figure 12 is another configuration diagram of the charged particle beam device of Embodiment 7. The detectors 18 and 19 can be configured as shown in Figure 11, with them respectively positioned above and below the objective lens 7 to enclose the objective lens 7, or as shown in Figure 12, either detector 18 or 19 can be positioned on the upper side of the objective lens (closer to the electron source 1).

<Embodiment 8> Figure 13 is a configuration diagram of the charged particle beam device of Embodiment 8 of this disclosure. Figure 13 illustrates a configuration example of selecting two different energy bands, showing a control element 400 (processor) having a deflector 5 for controlling signal electron separation and a dispersion correction element 6, and a recording medium 401 that can be read and written by the control element 400. The control element 400 and the recording medium 401 can be used in Embodiments 1 to 7 described above.

The control element 400 selects two different energy bands with reference to the recording medium 401. It also calculates the voltage and current applied to the signal electron separator 5 and the dispersion correction element 6 to detect signal electrons in the two selected different energy bands. The control element 400 further calculates the voltage and current applied to the mesh electrodes 12 and 13, the energy analyzer 14, etc. When the signal electron conversion component 11 has a signal detection function, it can also control the same component.

The recording medium 401 stores the optical conditions of the primary electron beam formed by the negative voltage applied to the electron source 1, accelerating electrode 2, focusing lenses 3 and 4, objective lens 7, and sample 8, as well as information on the two different energy bands established in advance through simulation or experiment. The recording medium 401 can also store the correspondence between SEM images obtained in advance through experiment or simulation and the two different energy bands. In this case, the user can select the two different energy bands by choosing an example with the desired contrast from a plurality of SEM images. Furthermore, the correspondence between the observation conditions selected using the user interface described in Embodiment 4 and the optical conditions or SEM images of the primary electron line can be pre-saved in the recording medium 401, and then read out and used by the control element 400.

As another approach, when the information of the pattern to be observed is known in advance, information on two different energy bands corresponding to the pattern information can be pre-recorded in the recording medium 401 and used during observation. For example, in the defect inspection of semiconductor devices, when the defect level or type, defect size, defect ID, layer information, process information, etc., are known in advance, the two different energy bands corresponding to them can be pre-saved in the recording medium 401, and then read and used. Alternatively, the correspondence between the observation conditions selected using the user interface described in Embodiment 4 and the aforementioned defect information can be pre-saved in the recording medium 401, and then read and used.

As described above, the control detection system pre-stores data on the recording medium 401, which establishes a pre-defined correspondence between the energy bands of secondary charged particles and observation conditions/SEM images/defect information. This data is then read by the control element 400 to enable the detection of the energy bands corresponding to the observation conditions/SEM images/defect information. Therefore, even if the user does not specify the energy band on the GUI, they can still selectively detect the energy band by specifying it through the data.

The control element 400 and recording medium 401 can select the emission angle of signal electrons in addition to the two different energy bands. For example, the emission angle conditions selected using the user interface shown in Figure 7 or Figure 8 can be pre-saved in the recording medium 401 to establish a correspondence with the two different energy bands, and then read and used. Alternatively, this correspondence can be established in advance through simulation or experiment. The emission angle can also be pre-correlated with the optical conditions of the primary electron beam, or with SEM images obtained in advance through experiments or simulations, or with information about defects.

<Variations Regarding This Disclosure> This disclosure is not limited to the embodiments described above, but includes various variations. For example, the embodiments described above are provided for the purpose of clearly illustrating this disclosure and do not necessarily possess all the described components. Furthermore, a part of one embodiment can be replaced with the components of another embodiment. Additionally, the components of another embodiment can be added to the components of one embodiment. Furthermore, a part of the components of another embodiment can be added, deleted, or replaced with the components of each embodiment.

Figures 14 and 15 illustrate another configuration example of the deflector 5 for signal electronics separation. The deflector 5 for signal electronics separation can also use a sector magnetic field 1400 as shown in Figure 14, or a multi-segment deflection method constructed by multiple deflectors 1501 to 1503 as shown in Figure 15.

In the above embodiments, the control element 400 can be constructed using hardware such as circuit components that have this function, or it can be constructed by executing software that has this function using a computing device such as a CPU (Central Processing Unit).

In the above embodiments, the interface used by the control element 400 to receive the specified band can be a user interface as described in Figures 6 to 8, or a data interface for receiving data from the recording medium 401 as described in Embodiment 8 (the wiring connecting the control element 400 and the recording medium 401 and the interfaces at both ends in Figure 13). Alternatively, it can be any other interface that can provide the control element 400 with data of the specified band, such as a communication interface.

In the above implementation, the simultaneous detection of two or more energy bands (or the simultaneous setting of them on the interface) does not necessarily have to be simultaneous at all times. That is, as long as a plurality of energy bands are specified in advance, the control element 400 can adjust each element (e.g., dispersion correction element 6) based on that specification to detect each specified energy band. In other words, as long as the operating parameters (parameter set) of each element of the charged particle beam device are set in advance, no further parameter adjustment is required, and each specified energy band can be detected using that single parameter set. The same applies to the emission angle.

In the above embodiments, the range of the energy bands of the secondary charged particles detected by the charged particle beam device is, for example, expected to be 1 eV to 10000 eV, but it is not limited to this. It can also be designed to detect secondary charged particles spanning a wider range of energy bands. It can also be configured such that the energy band range can be specified in the interface of the control element 400.

Although the above embodiments illustrate an example of using an electron beam as a charged particle beam, this disclosure is also applicable to devices that detect secondary charged particles by irradiating the sample with other charged particle beams (e.g., ion beam devices).

1: Electronic source 2: Accelerating electrode 3: Condensing lens 4: Condensing lens 5: Polarizer for signal electron separation 6: Dispersion correction component 7: Object lens 8: Sample 9: Detector 10: Detector 11: Signal electron conversion component 12: Mesh electrode 13: Mesh electrode 14: Energy analyzer 15: Detector 16: Detector 17: Position-sensitive detector 18: Detector 19: Detector 20: Track control electrode 21: Mesh electrode 22: Mesh electrode 100: Primary electron optical axis 200: Signal electron optical axis 201: Signal electronic track of first energy 202: Signal electronic track of first energy 210: Signal electronic track of second energy 211: Signal electronic track of second energy 220: Signal electronic track of second energy 230: Signal electronic track of first energy 300: Slider 400: Control element 401: Recording medium

[Figure 1] Configuration diagram of the charged particle beam device according to Embodiment 1. [Figure 2] Configuration diagram of the charged particle beam device according to Embodiment 2. [Figure 3] Configuration diagram of the charged particle beam device according to Embodiment 3. [Figure 4] Another configuration diagram of the charged particle beam device according to Embodiment 3. [Figure 5] Another configuration diagram of the charged particle beam device according to Embodiment 3. [Figure 6] Schematic diagram of a user interface having a slider 300. [Figure 7] Another example of a user interface in Embodiment 4. [Figure 8] Another example of a user interface in Embodiment 4. [Figure 9] Configuration diagram of the charged particle beam device according to Embodiment 5. [Figure 10] Configuration diagram of the charged particle beam device according to Embodiment 6. [Figure 11] Configuration diagram of the charged particle beam device according to Embodiment 7. [Figure 12] Another configuration diagram of the charged particle beam device of Embodiment 7. [Figure 13] A configuration diagram of the charged particle beam device of Embodiment 8. [Figure 14] Schematic diagram of another configuration example of the deflector 5 for signal electron separation. [Figure 15] Schematic diagram of another configuration example of the deflector 5 for signal electron separation.

1: Electronic power source

2: Accelerating Electrode

3: Focusing Lens

4: Focusing Lens

5: Biased transducer for signal-to-electronic separation

6: Components for dispersion correction

7: Lens for viewing objects

8: Sample

9: Detector

100: Primary electron optical axis

200: Signal Electronic Optical Axis

201: Signal Electron Orbit of the First Energy

210: Signal electron orbit of the second energy level

220: Signal electron orbit of the second energy level

230: Signal Electron Orbit of the First Energy

Claims (12)

A charged particle beam device is a device for irradiating a sample with charged particle beams, characterized by comprising: a detection system for detecting secondary charged particles emitted from the sample; and a processor providing an interface for specifying the energy bands of the secondary charged particles detected by the detection system; the interface being configured to simultaneously set at least two of the aforementioned energy bands; the processor being configured to set a parameter set consisting of at least one operational parameter of the detection system; the processor setting the aforementioned parameter set, and being able to detect each of the aforementioned secondary charged particles having the aforementioned energy bands simultaneously set in the aforementioned interface using a single set of the aforementioned parameters; and the interface being configured to specify the emission angle of the secondary charged particles according to each of the aforementioned energy bands. The aforementioned processor sets the aforementioned parameter set, enabling the aforementioned detection system to detect the aforementioned secondary charged particles with the aforementioned emission angle specified through the aforementioned interface. As described in claim 1, the charged particle beam device, wherein, the aforementioned interface is composed of a user interface component for user operation, and the aforementioned user interface component is configured to simultaneously set at least two of the aforementioned energy bands in a single aforementioned user interface component. As described in claim 2, the charged particle beam device comprises: a slider for operation by the user; a first portion specifying the first energy band of the secondary charged particle and a second portion specifying the second energy band of the secondary charged particle; the first portion being specified by the gap between the first handle and the second handle of the slider; and the second portion being specified by the gap between the third handle and the fourth handle of the slider. As described in claim 1, the charged particle beam apparatus includes: a detection system comprising a first detector and a second detector, each for detecting the aforementioned secondary charged particles; an interface comprising a first UI component specifying the first energy band and the first emission angle detected by the first detector, and a second UI component specifying the second energy band and the second emission angle detected by the second detector; and a processor setting the aforementioned parameter set such that the first detector detects the aforementioned secondary charged particles having the aforementioned first energy band and the aforementioned first emission angle specified by the aforementioned interface, and the second detector detects the aforementioned secondary charged particles having the aforementioned second energy band and the aforementioned second emission angle specified by the aforementioned interface. A charged particle beam device is a device for irradiating a sample with charged particle beams, characterized by comprising: a detection system for detecting secondary charged particles emitted from the sample; and a processor providing an interface for specifying the energy band of the secondary charged particles detected by the detection system; the interface being configured to simultaneously set at least two of the aforementioned energy bands; the processor being configured to set a parameter set consisting of at least one operational parameter of the detection system; the processor setting the aforementioned parameter set, and being able to detect each of the aforementioned secondary charged particles having the aforementioned energy bands simultaneously set in the aforementioned interface using a single set of the aforementioned parameters; the detection system comprising: a first detector for detecting the aforementioned secondary charged particles; and a correction element disposed at a position that the secondary charged particles would pass through before reaching the first detector; The aforementioned correction element applies a biasing effect, a focusing effect, or both of these effects to at least one of the aforementioned secondary charged particles having a first energy band or the aforementioned secondary charged particles having a second energy band, thereby adjusting the orbit of the aforementioned secondary charged particles so that both the aforementioned secondary charged particles having the aforementioned first energy band and the aforementioned secondary charged particles having the aforementioned second energy band head towards the aforementioned first detector. The charged particle beam apparatus as described in claim 5, wherein the aforementioned detection system further comprises: a second detector for detecting the aforementioned secondary charged particles; and a signal-to-electronics conversion element disposed between the aforementioned first detector and the aforementioned second detector; the aforementioned correction element adjusting the trajectory of the aforementioned secondary charged particles so that the aforementioned secondary charged particles emitted at a first emission angle do not collide with the aforementioned signal-to-electronics conversion element and reach the aforementioned first detector, and adjusting the trajectory of the aforementioned secondary charged particles so that the aforementioned secondary charged particles emitted at a second emission angle collide with the aforementioned signal-to-electronics conversion element; the aforementioned signal-to-electronics conversion element is designed such that, if the aforementioned secondary charged particles collide, new signal electrons are generated and emitted toward the aforementioned second detector, thereby enabling the aforementioned second detector to detect the aforementioned secondary charged particles emitted at the aforementioned second emission angle. The charged particle beam apparatus as described in claim 6, wherein the aforementioned detection system further comprises: a first mesh electrode disposed between the first detector and the correction element; a second mesh electrode disposed between the second detector and the correction element; and at least one of them, the aforementioned processor applies a negative voltage to at least one of the first mesh electrode or the second mesh electrode, thereby selecting the energy band of the secondary charged particles detected by the first detector and the second detector respectively. The charged particle beam apparatus as described in claim 7, wherein the aforementioned detection system further comprises: an energy analyzer disposed between the aforementioned first detector and the aforementioned second detector, wherein the aforementioned energy analyzer has a higher energy resolution than the case in which the aforementioned first mesh electrode and the aforementioned second mesh electrode are combined. The charged particle beam apparatus as described in claim 1, wherein the aforementioned detection system further comprises: a first detector for detecting the aforementioned secondary charged particles; a second detector for detecting the aforementioned secondary charged particles; and a correction element disposed at a position that the aforementioned secondary charged particles would pass through before reaching the aforementioned first detector and the aforementioned second detector; the aforementioned correction element applies a deflection effect, a focusing effect, or both of the aforementioned secondary charged particles emitted at a first emission angle or emitted at a second emission angle to at least one of the aforementioned secondary charged particles, thereby adjusting the trajectory of the aforementioned secondary charged particles so that the aforementioned secondary charged particles emitted at the aforementioned first emission angle go to the aforementioned first detector, and the aforementioned secondary charged particles emitted at the aforementioned second emission angle go to the aforementioned second detector. The charged particle beam apparatus as described in claim 1, wherein the aforementioned detection system further comprises: a first detector for detecting the aforementioned secondary charged particles; a second detector for detecting the aforementioned secondary charged particles; and a deflector for deflecting the aforementioned secondary charged particles; the aforementioned deflector applying a deflecting effect, a converging effect, or both of these effects to at least one of the aforementioned secondary charged particles having a first energy band or the aforementioned secondary charged particles having a second energy band, thereby adjusting the trajectory of the aforementioned secondary charged particles so that the aforementioned secondary charged particles having the aforementioned first energy band go to the aforementioned first detector, and the aforementioned secondary charged particles having the aforementioned second energy band go to the aforementioned second detector. As described in claim 1, the charged particle beam apparatus includes: a detection system comprising a detector for detecting the secondary charged particles; the detector comprising a plurality of detection elements capable of individually switching between detecting the secondary charged particles; and a processor controlling the detector such that the detection elements of the plurality of detection elements, where the secondary charged particles having a first energy band are incident and the detection elements of the secondary charged particles having a second energy band are incident, detect the secondary charged particles, thereby selectively detecting the secondary charged particles having the first energy band and the secondary charged particles having the second energy band. As described in claim 1, the charged particle beam device, wherein, the aforementioned interface is configured to specify a range from 1 eV to 10000 eV as the aforementioned energy band, and the aforementioned processor adjusts the aforementioned parameter set so as to be able to detect the aforementioned energy band specified in the aforementioned interface.