TWI908088B - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The substrate processing apparatus of this invention includes a light source cover 92, an inner nozzle 93, and an exhaust guide 94. The light source cover 92 includes a lower surface 92sL facing the substrate W and a central opening 92op formed from the inner periphery of the lower surface 92sL. The inner nozzle 93 forms an airflow of oxidizing gas that flows radially from the central opening 92op between the lower surface 92sL and the substrate W. The light source 91 irradiates the substrate W through the lower surface 92sL. The exhaust guide 94 includes an annular suction port 95i surrounding the central axis CL outside the central opening 92op, through which gas that flows radially from the central opening 92op along the substrate W is drawn.

Description

Substrate processing apparatus and substrate processing method

This invention relates to a substrate processing apparatus and a substrate processing method. The substrate includes, for example, semiconductor wafers, substrates for FPD (Flat Panel Display) devices such as liquid crystal display devices or organic EL (electroluminescence) display devices, substrates for optical discs, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

Patent document 1 discloses the following: When removing a solidified mass from the patterned surface of a substrate through sublimation, organic matter precipitated from the solidified mass is removed by contacting ozone gas with the solidified mass. Paragraph 0149 of patent document 1 describes an ozone gas exhaust mechanism, an ozone gas exhaust pump, an exhaust pipe, a valve, and a suction nozzle, etc. [Prior Art Documents][Patent Documents]

[Patent Document 1] Japanese Patent Application Publication No. 2018-110199

[Problem to be solved by the invention] Although paragraph 0149 of Patent 1 describes the process of venting ozone gas supplied to the solid, Patent 1 does not disclose the specific structure and method for venting ozone gas.

At least one embodiment of the present invention provides a substrate processing apparatus and method capable of narrowing the diffusion range of oxidizing gas used to oxidize and vaporize organic matter, and capable of removing organic matter from a substrate by supplying oxidizing gas. [Technical Means for Solving the Problem]

One embodiment of the present invention provides a substrate processing apparatus comprising: a substrate holder for holding a substrate; a light source cover including a facing surface and a central opening, the facing surface facing the substrate held in the substrate holder, the central opening being formed by the inner periphery of the facing surface surrounding a central axis passing through the center of the substrate; and an inner nozzle for spraying an oxidizing gas that oxidizes and vaporizes organic matter onto the substrate held in the substrate holder, thereby forming a radial flow of the oxidizing gas from the central opening on the facing surface. Between the substrate and the aforementioned substrate, a light source heats the substrate and oxidizing gas by irradiating the substrate held in the substrate holder with light through the aforementioned opposing surface; and an exhaust guide comprising an annular suction port or a plurality of segmented suction ports, through which gas flowing radially along the substrate from the aforementioned central opening is drawn, the annular suction port surrounding the aforementioned central axis outside the aforementioned central opening, and the plurality of segmented suction ports being arranged in an annular manner surrounding the aforementioned central axis outside the aforementioned central opening.

In the above embodiments, the substrate processing apparatus may also have at least one of the following features.

The aforementioned light source cover further includes an outer peripheral wall surrounding the aforementioned light source, and the aforementioned exhaust guide surrounds the entire circumference of the aforementioned peripheral wall in a manner that does not contact the aforementioned peripheral wall.

The aforementioned light source cover further includes a top wall protruding inward from the aforementioned outer peripheral wall, and the aforementioned exhaust guide includes an exhaust ring that surrounds the entire circumference of the aforementioned outer peripheral wall in a manner that does not contact the aforementioned outer peripheral wall, and a flange protruding outward from the aforementioned exhaust ring; the aforementioned substrate processing apparatus further includes a support arm that supports the aforementioned top wall and flange, and at least a portion of the aforementioned flange is disposed at a position lower than the upper end of the aforementioned top wall and higher than the lower end of the aforementioned top wall.

The aforementioned exhaust guide further includes an exhaust port with an opening on its surface and an internal flow path that guides gas from the annular suction port or a plurality of segmented suction ports to the exhaust port. The internal flow path includes: a first cylindrical flow path that surrounds the central axis on a cylindrical surface; a second cylindrical flow path that surrounds the central axis on the cylindrical surface; and a plurality of first linear flow paths that extend from the first cylindrical flow path to the second cylindrical flow path. The plurality of first linear flow paths extend toward the annular suction port or the plurality of segmented suction ports from the second cylindrical flow path to the opposite side of the plurality of first linear flow paths; the plurality of first linear flow paths and the plurality of second linear flow paths are arranged on the cylindrical surface in such a manner that, when viewed in a direction parallel to the central axis, at least one of the plurality of first linear flow paths does not overlap with any of the plurality of second linear flow paths.

The aforementioned substrate processing apparatus further includes a gas heater for heating the aforementioned oxidizing gas before it is supplied to the aforementioned internal nozzle.

The aforementioned substrate processing apparatus further comprises: an oxidizing gas piping guiding the oxidizing gas ejected from the inner nozzle; an inert gas piping guiding the inert gas ejected from the inner nozzle; and an oxidizing gas valve that switches between an open state and a closed state, the open state meaning that the oxidizing gas flowing toward the inner nozzle within the oxidizing gas piping passes through, and the closed state meaning... This refers to stopping the oxidizing gas flowing toward the inner nozzle in the oxidizing gas piping; and an inert gas valve that switches between an open state and a closed state, wherein the open state means allowing the inert gas flowing toward the inner nozzle in the inert gas piping to pass through, and the closed state means stopping the inert gas flowing toward the inner nozzle in the inert gas piping.

The aforementioned substrate processing apparatus further includes a control device that, while drawing gas through the exhaust guide and switching the oxidation gas valve from the open state to the closed state, simultaneously draws gas through the exhaust guide and switches the inert gas valve from the closed state to the open state.

The aforementioned substrate processing apparatus further comprises: a liquid-containing nozzle for dispensing a liquid containing a sublimation substance to the substrate held in the substrate holder; a gas nozzle for dispensing gas to the substrate held in the substrate holder; and a rotary motor for rotating the substrate held in the substrate holder by rotating the substrate holder about a rotation axis, the rotation axis being located at the center of the substrate held in the substrate holder.

The aforementioned substrate processing apparatus further includes a control device that, after removing the cured film from the aforementioned substrate, causes the inner nozzle to begin ejecting the aforementioned oxidizing gas, wherein the cured film contains the aforementioned sublimation substance contained in the aforementioned sublimation substance containing liquid.

Another embodiment of the present invention provides a substrate processing method, comprising: an oxidizing gas supply step, wherein an oxidizing gas for oxidizing and vaporizing organic matter is sprayed from an inner nozzle onto a substrate held in a substrate holder, and a flow of the oxidizing gas radially flowing from a central opening is formed between an opposing surface and the substrate, the central opening being formed by the inner periphery of the opposing surface surrounding a central axis passing through the center of the substrate; and a light-emitting step, wherein the oxidizing gas is sprayed from the inner nozzle while the light-emitting gas is emitted across the opposing surface onto the substrate held in the substrate holder. The plate is irradiated by a light source to heat the substrate and the oxidizing gas; and the exhaust step is performed by spraying the oxidizing gas out of the inner nozzle while drawing the oxidizing gas radially along the central opening of the substrate through an annular suction port or a plurality of segmented suction ports. The exhaust guide provided with the annular suction port or the plurality of segmented suction ports guides the oxidizing gas. The annular suction port surrounds the central axis outside the central opening, and the plurality of segmented suction ports are arranged in an annular shape to surround the central axis outside the central opening.

The above or other objects, features and effects of this invention will become clear from the following description of the embodiments with reference to the accompanying drawings.

Unless otherwise specified, the air pressure inside the substrate processing apparatus 1 shall be maintained at the air pressure inside the cleanroom where the substrate processing apparatus 1 is installed (e.g., one atmosphere or a value near it).

Figure 1A is a schematic top view showing the layout of a substrate processing apparatus 1 according to one embodiment of the present invention. Figure 1B is a schematic side view of the substrate processing apparatus 1.

The substrate processing apparatus 1 is a monolithic device for processing wafer-shaped substrates W, such as semiconductor wafers, one by one. The substrate processing apparatus 1 includes: a load port LP, which holds a carrier CA that houses the substrate W; a plurality of processing units 2, which process the substrate W transported from the carrier CA on the load port LP with a processing fluid such as a processing liquid or a processing gas; a transport system TS, which transports the substrate W between the carrier CA on the load port LP and the plurality of processing units 2; and a control device 3, which controls the substrate processing apparatus 1.

A plurality of processing units 2 form a plurality of towers TW. Figure 1A shows an example with 4 towers TW. As shown in Figure 1B, a plurality of processing units 2 are stacked vertically within one tower TW. As shown in Figure 1A, the plurality of towers TW are formed as two rows extending along the depth direction of the substrate processing apparatus 1 in top view. In top view, the two rows are opposite each other across the transport path TP.

The transfer system TS includes: a transfer robot IR, which transfers substrate W between a carrier CA on a load port LP and a plurality of processing units 2; and a central robot CR, which transfers substrate W between the transfer robot IR and the plurality of processing units 2. The transfer robot IR is positioned between the load port LP and the central robot CR in a top view. The central robot CR is positioned on the transfer path TP.

The transfer robot IR includes one or more hands Hi that horizontally support the substrate W. The hands Hi can move horizontally in both the horizontal and vertical directions. The hands Hi can rotate around a vertical line. The hands Hi can move the substrate W into and out of the carrier CA on any load port LP, and can exchange substrate W with the central robot CR.

The central robot CR includes one or more hands Hc that horizontally support the substrate W. The hands Hc can move horizontally in both the horizontal and vertical directions. The hands Hc can rotate around a vertical line. The hands Hc can transfer the substrate W to the transfer robot IR, and can move the substrate W into and out of any processing unit 2.

Next, let's explain processing unit 2.

Figure 2 is a schematic diagram of the interior of the processing unit 2 in the front-view substrate processing apparatus 1. Figure 3 is a schematic diagram of the interior of the processing unit 2 from a top view.

As shown in Figure 3, the processing unit 2 includes: a box-shaped chamber 4 having an internal space; a rotating chuck 10 that holds a substrate W horizontally within the chamber 4 and rotates around a vertical axis of rotation A1 passing through the center of the substrate W; and a cylindrical processing cup 21 that surrounds the rotating chuck 10 around the axis of rotation A1.

The chamber 4 includes: a box-shaped partition wall 5 with an inlet/outlet 5b for the substrate W to pass through; and a baffle 7 that opens or closes the inlet/outlet 5b. An FFU (Fan Filter Unit) 6 is positioned above an air outlet 5a located on the upper part of the partition wall 5. The FFU 6 continuously supplies clean air (filtered air) into the chamber 4 from the air outlet 5a. The gas in the chamber 4 is discharged from the chamber 4 through an exhaust pipe 8 connected to the bottom of the treatment cup 21. This creates a continuous downflow of clean air within the chamber 4. The flow rate of the exhaust gas discharged through the exhaust pipe 8 varies depending on the opening degree of the exhaust valve 9 located within the exhaust pipe 8.

The rotary chuck 10 includes: a circular plate-shaped rotary base 12 held in a horizontal position; a plurality of chuck pins 11, which hold the substrate W horizontally above the rotary base 12; a rotary shaft 13 extending downward from the center of the rotary base 12; and a rotary motor 14 that rotates the rotary base 12 and the plurality of chuck pins 11 by rotating the rotary shaft 13.

The rotary chuck 10 is not limited to a gripping chuck that contacts the end face of the substrate W with a plurality of chuck pins 11, but can also be a vacuum chuck that holds the substrate W horizontally by adsorbing the back side (lower surface) of the substrate W, which is a non-device forming surface, onto the upper surface 12u of the rotary base 12. When the rotary chuck 10 is a gripping chuck, the plurality of chuck pins 11 function as substrate holders. When the rotary chuck 10 is a vacuum chuck, the rotary base 12 function as a substrate holder.

The processing cup 21 includes: a plurality of baffles 24, which receive the processing liquid discharged from the substrate W outward; a plurality of cups 23, which receive the processing liquid guided downward by the plurality of baffles 24; and a cylindrical outer wall member 22, which surrounds the plurality of baffles 24 and the plurality of cups 23. Figure 2 shows an example in which four baffles 24 and three cups 23 are provided, and the outermost cup 23 is integral with the third baffle 24 from top to bottom.

The enclosure 24 includes: a cylindrical portion 25 surrounding the rotating chuck 10; and an annular top wall 26 extending obliquely upward from the upper end of the cylindrical portion 25 toward the rotation axis A1. A plurality of top walls 26 overlap vertically, and the plurality of cylindrical portions 25 are arranged concentrically. The annular upper end of the top wall 26 corresponds to the upper end 24u of the enclosure 24 surrounding the substrate W and the rotating base 12 when viewed from above. A plurality of cups 23 are respectively disposed below the plurality of cylindrical portions 25. The cups 23 have annular grooves to receive the treatment fluid guided downward by the enclosure 24.

Processing unit 2 includes a barrier lifting unit 27 that individually raises and lowers a plurality of barriers 24. The barrier lifting unit 27 positions the barriers 24 at any position within the range of an upper position to a lower position. Figure 2 shows a configuration where two barriers 24 are positioned in the upper position and the remaining two barriers 24 are positioned in the lower position. The upper position refers to a position where the upper ends 24u of the barriers 24 are positioned higher than the holding position where the base plate W of the rotating chuck 10 is positioned. The lower position refers to a position where the upper ends 24u of the barriers 24 are positioned lower than the holding position.

Processing unit 2 includes a plurality of nozzles for spraying processing liquid onto the substrate W held in the rotating chuck 10. The plurality of nozzles includes a first liquid nozzle 31a and a second liquid nozzle 31b for spraying liquid onto the upper surface of the substrate W, and a first rinsing liquid nozzle 35a and a second rinsing liquid nozzle 35b for spraying rinsing liquid onto the upper surface of the substrate W. The center nozzle 55, the inner nozzle 93, and the lower surface nozzle 71 described below are also included in the plurality of nozzles.

The first liquid spray nozzle 31a can be a scanning nozzle that moves the impact position of the liquid on the substrate W within the upper surface of the substrate W, or it can be a fixed nozzle that cannot move the impact position of the liquid on the substrate W. The other nozzles are similar. Figure 2 shows an example where the first liquid spray nozzle 31a, the second liquid spray nozzle 31b, the first rinse fluid spray nozzle 35a, and the second rinse fluid spray nozzle 35b are scanning nozzles, and the other nozzles are fixed nozzles.

The first liquid nozzle 31a is connected to the first liquid conduit 32a, which guides the liquid to the first liquid nozzle 31a. The second liquid nozzle 31b is connected to the second liquid conduit 32b, which guides the liquid to the second liquid nozzle 31b. If the first liquid valve 33a installed in the first liquid conduit 32a is opened, the liquid will be continuously sprayed downwards from the spray outlet of the first liquid nozzle 31a. Similarly, if the second liquid valve 33b installed in the second liquid conduit 32b is opened, the liquid will be continuously sprayed downwards from the spray outlet of the second liquid nozzle 31b.

Figure 2 illustrates an example where DHF is sprayed from nozzle 31a and SC1 is sprayed from nozzle 31b. DHF (dilute hydrogen fluoride) represents dilute hydrofluoric acid. SC1 represents a liquid containing ammonium hydroxide, hydrogen peroxide, and water. The liquid sprayed from nozzle 31a can be a liquid containing at least one of sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia, hydrogen peroxide, organic acids (e.g., citric acid, oxalic acid, etc.), organic bases (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactants, and preservatives, or a liquid other than those listed above. The same applies to the liquid sprayed from nozzle 31b. The liquid sprayed from the second liquid nozzle 31b is a liquid whose composition and temperature are different from those of the liquid sprayed from the first liquid nozzle 31a.

The first liquid valve 33a includes: a valve body having an annular valve seat for the passage of liquid medicine; a valve body movable relative to the valve seat; and an actuator that moves the valve body between a closed position where the valve body is in contact with the valve seat and an open position where the valve body is separated from the valve seat; however, this is not shown in the figure. Other valves are similar. The actuator can be a pneumatic actuator, an electric actuator, or an actuator other than those. The control device 3 opens or closes the first liquid valve 33a by controlling the actuator.

The first flushing fluid nozzle 35a is connected to the first flushing fluid pipe 36a, which guides the flushing fluid to the first flushing fluid nozzle 35a. The second flushing fluid nozzle 35b is connected to the second flushing fluid pipe 36b, which guides the flushing fluid to the second flushing fluid nozzle 35b. If the first flushing fluid valve 37a installed in the first flushing fluid pipe 36a is opened, the flushing fluid will be continuously sprayed downwards from the spray outlet of the first flushing fluid nozzle 35a. Similarly, if the second flushing fluid valve 37b installed on the second flushing fluid pipe 36b is opened, the flushing fluid will be continuously sprayed downward from the outlet of the second flushing fluid nozzle 35b.

Figure 2 illustrates an example of DIW (Deionized Water) being sprayed from the first rinse fluid nozzle 35a and the second rinse fluid nozzle 35b. DIW represents pure water. The rinse fluid sprayed from the first rinse fluid nozzle 35a can be any of the following: carbonated water, electrolyzed water, hydrogen water, ozone water, and hydrochloric acid water diluted to a concentration of approximately 10–100 ppm, or any other liquid. The same applies to the rinse fluid sprayed from the second rinse fluid nozzle 35b. The composition and temperature of the rinsing fluid sprayed from the second rinsing fluid nozzle 35b may be the same as or different from the rinsing fluid sprayed from the first rinsing fluid nozzle 35a.

As shown in Figure 3, the first drug spray nozzle 31a and the first rinse fluid spray nozzle 35a are connected to a first nozzle moving unit 34a that moves the first drug spray nozzle 31a and the first rinse fluid spray nozzle 35a in at least one of the vertical and horizontal directions. The first nozzle moving unit 34a moves the first medicine nozzle 31a and the first rinsing fluid nozzle 35a horizontally between a processing position and a standby position. The processing position refers to the position where the processing fluid sprayed from the first medicine nozzle 31a or the first rinsing fluid nozzle 35a is supplied to the upper surface of the substrate W. The standby position refers to the position where the first medicine nozzle 31a and the first rinsing fluid nozzle 35a are located around the processing cup 21 when viewed from above.

Similarly, the second medicine nozzle 31b and the second rinse fluid nozzle 35b are connected to the second nozzle moving unit 34b, which moves the second medicine nozzle 31b and the second rinse fluid nozzle 35b in at least one of the vertical and horizontal directions. The second nozzle moving unit 34b moves the second medicine nozzle 31b and the second rinsing fluid nozzle 35b horizontally between a processing position and a standby position. The processing position refers to the position where the processing fluid sprayed from the second medicine nozzle 31b or the second rinsing fluid nozzle 35b is supplied to the upper surface of the substrate W. The standby position refers to the position where the second medicine nozzle 31b and the second rinsing fluid nozzle 35b are located around the processing cup 21 when viewed from above.

As shown in Figure 2, the plurality of nozzles includes a lower surface nozzle 71 that sprays treatment liquid onto the center of the lower surface of the substrate W. The lower surface nozzle 71 includes a circular plate portion disposed between the upper surface 12u of the rotating base 12 and the lower surface of the substrate W, and a cylindrical portion extending downward from the circular plate portion. The nozzle outlet of the lower surface nozzle 71 is opened at the center of the upper surface of the circular plate portion. When the substrate W is held in the rotating chuck 10, the nozzle outlet of the lower surface nozzle 71 is vertically aligned with the center of the lower surface of the substrate W.

The lower surface nozzle 71 is connected to a heating fluid pipe 72 that guides warm water (pure water at a temperature higher than room temperature), which is one example of a heating fluid, to the lower surface nozzle 71. The pure water is heated by the heater 75 and then supplied to the lower surface nozzle 71. If the heating fluid valve 73 installed in the heating fluid pipe 72 is opened, the warm water is continuously sprayed upward from the nozzle outlet of the lower surface nozzle 71 at a flow rate corresponding to the opening of the flow rate regulating valve 74 that changes the flow rate of the warm water. In this way, warm water is supplied to the lower surface of the substrate W.

The outer peripheral surface of the lower surface nozzle 71 and the inner peripheral surface of the rotating base 12 form a vertically extending cylindrical gas flow path 82. The gas flow path 82 includes a central opening 81 in the central opening of the upper surface 12u of the rotating base 12. The gas flow path 82 is connected to a gas pipe 83 that guides inert gas to the central opening 81 of the rotating base 12. The substrate processing apparatus 1 may also be equipped with a heater 86 for heating the inert gas ejected from the central opening 81 of the rotating base 12. If the gas valve 84 installed in the gas pipe 83 is opened, the inert gas is continuously ejected upward from the central opening 81 of the rotating base 12 at a flow rate corresponding to the opening of the flow rate regulating valve 85 that changes the flow rate of the inert gas.

The inert gas ejected from the central opening 81 of the rotating base 12 is nitrogen. The inert gas can also be any gas other than nitrogen, such as helium or argon. When the substrate W is held in the rotating chuck 10, if nitrogen is ejected from the central opening 81 of the rotating base 12, the nitrogen flows radially in all directions between the lower surface of the substrate W and the upper surface 12u of the rotating base 12. In this way, the space between the substrate W and the rotating base 12 is filled with nitrogen.

Processing unit 2 includes a blocking member 51 disposed above the rotary chuck 10. Figure 2 shows an example of the blocking member 51 being a circular plate-shaped blocking plate. The blocking member 51 includes a circular plate portion 52 horizontally disposed above the rotary chuck 10. The blocking member 51 is horizontally supported by a cylindrical support shaft 53 extending upward from the center of the circular plate portion 52. The central axis of the circular plate portion 52 is disposed on the rotation axis A1 of the substrate W. The lower surface of the circular plate portion 52 corresponds to the lower surface 51L of the blocking member 51. The lower surface 51L of the blocking member 51 is parallel to the upper surface of the substrate W and has an outer diameter greater than the diameter of the substrate W.

The blocking component 51 is connected to a blocking component lifting unit 54 that vertically raises and lowers the blocking component 51. The blocking component lifting unit 54 positions the blocking component 51 at any position within the range of an upper position (the position shown in Figure 2) to a lower position. The lower position is a position where the lower surface 51L of the blocking component 51 is close to the upper surface of the substrate W, at a height where the scanning nozzles, such as the first liquid nozzle 31a, cannot enter the space between the substrate W and the blocking component 51. The upper position is a standby position where the blocking component 51 is retracted to a height where the scanning nozzles can enter the space between the blocking component 51 and the substrate W.

A plurality of nozzles include a central nozzle 55 that sprays a process fluid, such as a liquid or gas, downward through a central opening 61 located at the center of the lower surface 51L of the blocking member 51. The central nozzle 55 extends vertically along the axis of rotation A1. The central nozzle 55 is disposed within a through hole that penetrates vertically through the center of the blocking member 51. The inner circumferential surface of the blocking member 51 surrounds the outer circumferential surface of the central nozzle 55 at intervals. The central nozzle 55 rises and falls together with the blocking member 51. The outlet of the central nozzle 55 that sprays the process fluid is located above the central opening 61 of the blocking member 51.

The center nozzle 55 is connected to a sublimant-containing liquid piping 40 that directs the sublimant-containing liquid to the center nozzle 55, and a replacement liquid piping 44 that directs the replacement liquid to the center nozzle 55. If the sublimant-containing liquid valve 41 installed in the sublimant-containing liquid piping 40 is opened, the sublimant-containing liquid is continuously sprayed downwards from the outlet of the center nozzle 55. Similarly, if the replacement liquid valve 45 installed in the replacement liquid piping 44 is opened, the replacement liquid is continuously sprayed downwards from the outlet of the center nozzle 55. Figure 2 shows an example where the replacement liquid is IPA (isopropanol). The center nozzle 55 is an example of a sublimant-containing liquid nozzle. The center nozzle 55 is also an example of a fluid replacement nozzle.

The sublimation-containing liquid is a solution comprising a sublimation-containing substance equivalent to a solute and a solvent capable of dissolving the sublimation-containing substance. The sublimation-containing liquid may also contain substances other than the sublimation-containing substance and the solvent. The sublimation-containing substance may also be a substance that changes directly from a solid to a gas without passing through a liquid state at room temperature (similar to room temperature) or atmospheric pressure (the pressure within the substrate processing apparatus 1, such as one atmosphere or a value near that).

The freezing point of the liquid containing the sublimation substance (the freezing point at 1 atmosphere, and the same applies below) is lower than room temperature (e.g., 20–30°C). The substrate processing apparatus 1 is disposed in a cleanroom maintained at room temperature. Therefore, the liquid containing the sublimation substance can be maintained as a liquid even without heating. The freezing point of the sublimation substance is higher than the freezing point of the liquid containing the sublimation substance. The freezing point of the sublimation substance is higher than room temperature. At room temperature, the sublimation substance is a solid. The freezing point of the sublimation substance may also be higher than the boiling point of the solvent. The vapor pressure of the solvent is higher than the vapor pressure of the sublimation substance.

Sublimation substances can be, for example, any of the following: 2-methyl-2-propanol (also known as tert-butanol, t-butanol, or tert-butanol) or cyclohexanol; fluorinated hydrocarbons; 1,3,5-trimethylammonium ether (also known as trioxymethylene); camphor; naphthalene; and iodine; or other substances. Sublimation substances can also be cyclohexanone oxime, pinacolone oxime, or acetophenone oxime.

The solvent may be, for example, at least one of the group consisting of pure water, IPA, methanol, HFE (hydrofluoroether), acetone, PGMEA (propylene glycol monomethyl ether acetate), PGEE (propylene glycol monoethyl ether, 1-ethoxy-2-propanol), and ethylene glycol. IPA has a higher vapor pressure and lower surface tension than water.

As described below, a replacement solution is supplied to the upper surface of the substrate W covered by a liquid film of the rinsing solution, and a sublimation-containing liquid is supplied to the upper surface of the substrate W covered by a liquid film of the replacement solution. The replacement solution can be any liquid, as long as it can be mixed with both the rinsing solution and the sublimation-containing liquid. For example, the replacement solution is IPA (liquid). The replacement solution can also be a mixture of IPA and HFE, or other solutions.

The central nozzle 55 is connected to a gas pipe 56 that directs inert gas to the central nozzle 55. The substrate processing apparatus 1 may also include a heater 59 for heating the inert gas ejected from the central nozzle 55. If the gas valve 57 installed in the gas pipe 56 is opened, the inert gas is continuously ejected downward from the outlet of the central nozzle 55 at a flow rate corresponding to the opening of the flow rate regulating valve 58 that changes the flow rate of the inert gas. The inert gas ejected from the central nozzle 55 is nitrogen. The inert gas may also be a gas other than nitrogen, such as helium or argon.

The inner circumferential surface of the blocking component 51 and the outer circumferential surface of the central nozzle 55 form a vertically extending cylindrical gas flow path 62. The gas flow path 62 is connected to a gas pipe 63 that guides inert gas to the central opening 61 of the blocking component 51. The substrate processing apparatus 1 may also be equipped with a heater 66 that heats the inert gas ejected from the central opening 61 of the blocking component 51. If the gas valve 64 installed in the gas pipe 63 is opened, the inert gas is continuously ejected downward from the central opening 61 of the blocking component 51 at a flow rate corresponding to the opening of the flow rate regulating valve 65 that changes the flow rate of the inert gas. The inert gas ejected from the central opening 61 of the blocking component 51 is nitrogen. Inert gases can also be gases other than nitrogen, such as helium or argon.

As shown in Figure 2, the processing unit 2 includes: a heater 90 that heats the substrate W held in the rotary chuck 10; an inner nozzle 93 that supplies gas between the substrate W held in the rotary chuck 10 and the heater 90; and an exhaust guide 94 that draws in the gas supplied by the inner nozzle 93 between the substrate W and the heater 90. The processing unit 2 further includes a heater moving unit 96 that moves the heater 90, the inner nozzle 93 and the exhaust guide 94 (hereinafter also referred to as "heater 90, etc.") relative to the substrate W held on the rotary chuck 10.

As shown in Figure 3, the heater moving unit 96 includes: a drive actuator 96ac, which generates power to move the heater 90, etc.; and a support arm 96ar, which transmits the power of the drive actuator 96ac to the heater 90, etc. The support arm 96ar is one example of a transmission element that transmits the power of the drive actuator 96ac to the heater 90, etc. The heater 90, etc., is mounted on the support arm 96ar. The support arm 96ar includes a head 96h that overlaps with the heater 90 when viewed from above, and a shaft 96s extending horizontally from the head 96h. The power of the drive actuator 96ac is transmitted sequentially to the shaft 96s, the head 96h, and the heater 90.

The actuator 96ac moves the heater 90 and the like between a processing position and a standby position. The position of the heater 90 and the like, drawn with a two-point chain in Figure 3, represents the processing position. The position of the heater 90 and the like, drawn with a solid line in Figure 3, represents the standby position. The processing position is the position where, in a top-view view, the heater 90 overlaps with the substrate W, and is positioned above the substrate W held on the rotary chuck 10. The standby position is the position where, in a top-view view, the heater 90 does not overlap with the substrate W held on the rotary chuck 10.

The drive actuator 96ac causes the heater 90, etc., to rotate around a rotation axis A2 that extends linearly outside the processing cup 21, thereby moving the heater 90, etc., horizontally along an arc-shaped path when viewed from above. Because the radius of the arc-shaped path is relatively large, the heater 90, etc., moves horizontally along a path that can be considered a straight line when viewed from above. The drive actuator 96ac can also move the heater 90, etc., horizontally without rotating it.

The drive actuator 96ac is a device that converts driving energy, representing electrical, fluid, magnetic, thermal, or chemical energy, into mechanical work. The drive actuator 96ac includes an electric motor (rotary motor), a linear motor, a cylinder, and other devices. When the drive actuator 96ac is an electric motor that causes the heater 90 to move horizontally, the rotational motion of the drive actuator 96ac can also be converted into the linear motion of the heater 90 by a motion converter such as a ball screw and a ball nut.

Next, the heater 90 and the inner nozzle 93 will be explained.

Figure 4 is a cross-sectional view of the heater 90, inner nozzle 93, and exhaust guide 94, cut along the central axis CL of the light source cover 92. Figure 5 is a schematic view of the heater 90, inner nozzle 93, and exhaust guide 94 from below. Figure 6 is an enlarged view of a portion of Figure 4. In Figure 5, the spray outlet 93d of the inner nozzle 93 and the suction port 95i of the exhaust guide 94 are highlighted in black.

The central axis CL of the light source cover 92 is an imaginary straight line. Figures 4 to 6 show an example where the central axis CL is a straight line extending from the center of the central opening 92op of the light source cover 92 along a direction orthogonal to the lower surface 92sL of the light source cover 92. In the following description, the axial direction Da of the light source cover 92 represents the direction parallel to the central axis CL, the radial direction Dr of the light source cover 92 represents the direction orthogonal to the central axis CL, and the circumferential direction Dc of the light source cover 92 represents the direction surrounding the central axis CL. When the central axis CL is vertical, the axial direction Da of the light source cover 92 corresponds to both the vertical direction and the up-down direction.

As described above, the processing unit 2 includes a heater 90 for heating the substrate W and an internal nozzle 93 for supplying gas between the substrate W and the heater 90. The heater 90 heats the substrate W by irradiating it with light while it is held in the rotating chuck 10. As shown in FIG4, the heater 90 includes a light source 91 that emits light such as visible light or infrared light by means of power supply, and a light source cover 92 that covers the light source 91.

The light source cover 92 includes: a bottom wall 92b, which is disposed below the light source 91; an inner peripheral wall 92i, which surrounds the central axis CL of the light source cover 92 on the side closer to the central axis CL than the light source 91; an outer peripheral wall 92o, which surrounds the central axis CL of both the light source 91 and the light source cover 92; and a plate-shaped top wall 92t, which protrudes inward from the upper end of the outer peripheral wall 92o and extends throughout the entire circumference of the outer peripheral wall 92o. Figures 4 and 5 show an example where a horizontal circular plate with a central circular hole is the bottom wall 92b, two vertical concentric cylinders are the outer peripheral wall 92o and the inner peripheral wall 92i, and a horizontal plate-shaped ring concentric with the outer peripheral wall 92o and the inner peripheral wall 92i is the top wall 92t.

The inner peripheral wall 92i extends from the inner periphery of the bottom wall 92b toward the opposite side of the substrate W. The outer peripheral wall 92o extends from the outer periphery of the bottom wall 92b toward the opposite side of the substrate W. The inner peripheral wall 92i is longer axially in the direction Da than the outer peripheral wall 92o. The upper end of the inner peripheral wall 92i is positioned slightly above the upper end of the outer peripheral wall 92o. The upper end of the inner peripheral wall 92i is positioned slightly above the upper surface of the top wall 92t. The top wall 92t and the outer peripheral wall 92o surround the inner peripheral wall 92i. The inner peripheral surfaces of the top wall 92t and the outer peripheral wall 92o extend horizontally away from the outer peripheral surface of the inner peripheral wall 92i throughout the entire circumference of the light source cover 92. The inner peripheral surface of the top wall 92t is positioned slightly outside the light source 91.

When the heater 90 is positioned above the substrate W, and the light source 91 emits light, the light from the light source 91 passes through the bottom wall 92b and illuminates the upper surface of the substrate W. This heats the upper surface of the substrate W. The material located between the light source 91 and the substrate W, such as the bottom wall 92b, is also heated by the light from the light source 91. The bottom wall 92b is made of a transparent material that allows light to pass through, such as quartz. Figure 4 shows an example where the light source cover 92 is entirely made of quartz. In this example, the bottom wall 92b is integral with the inner peripheral wall 92i, the outer peripheral wall 92o, and the top wall 92t. At least one of the inner peripheral wall 92i, the outer peripheral wall 92o, and the top wall 92t can also be a component fixed to the bottom wall 92b and different from the bottom wall 92b.

As shown in Figure 6, the surface of the light source cover 92 includes: an inner peripheral surface 92si, which surrounds the central axis CL of the light source cover 92; and an outer peripheral surface 92so, which surrounds the central axis CL of the light source cover 92 outside the inner peripheral surface 92si. The surface of the light source cover 92 further includes: an upper surface 92su, which extends inward from the upper end of the outer peripheral surface 92so of the light source cover 92; and a lower surface 92sL, which extends from the lower end of the inner peripheral surface 92si of the light source cover 92 to the lower end of the outer peripheral surface 92so of the light source cover 92. Figure 6 shows an example where the inner peripheral surfaces of the bottom wall 92b and the inner peripheral wall 92i correspond to the inner peripheral surface 92si of the light source cover 92. In this example, the outer peripheral surfaces of the bottom wall 92b and the outer peripheral wall 92o correspond to the outer peripheral surface 92so of the light source cover 92, the lower surface of the bottom wall 92b corresponds to the lower surface 92sL of the light source cover 92, and the upper surfaces of the outer peripheral wall 92o and the top wall 92t correspond to the upper surface 92su of the light source cover 92.

The inner circumferential surface 92si of the light source cover 92 is a straight cylindrical surface with a fixed or substantially fixed diameter (excluding the top and bottom surfaces, which are parallel circular planes). The outer circumferential surface 92so of the light source cover 92 is similarly fixed. The outer circumferential surface 92so of the light source cover 92 is concentric with the inner circumferential surface 92si of the light source cover 92. A portion or all of the inner circumferential surface 92si of the light source cover 92 may have a diameter that changes stepwise or continuously as it approaches the lower end of the inner circumferential surface 92si of the light source cover 92. The horizontal cross-section of the inner circumferential surface 92si of the light source cover 92 may also be a shape other than a circle. The same applies to the outer circumferential surface 92so of the light source cover 92 regarding its diameter and cross-section. The outer peripheral surface 92so of the light source cover 92 may be eccentric relative to the inner peripheral surface 92si of the light source cover 92, or it may have a shape that is not similar to the inner peripheral surface 92si of the light source cover 92.

The upper surface 92su of the light source cover 92 is a circular horizontal surface concentric with the inner circumferential surface 92si of the light source cover 92. The lower surface 92sL of the light source cover 92 is a circular horizontal surface concentric with the inner circumferential surface 92si of the light source cover 92. The lower surface 92sL of the light source cover 92 is an example of an opposing surface directly facing the upper surface of the substrate W. The lower surface 92sL of the light source cover 92 corresponds to the lower surface of the heater 90. The size of the light source cover 92 is equivalent to the size of the heater 90. The light source cover 92 is smaller than the substrate W when viewed from above. Therefore, the lower surface 92sL of the light source cover 92 is also smaller than the substrate W when viewed from above. The outer diameter of the lower surface 92sL of the light source cover 92 may not reach the radius of the substrate W.

Figure 5 shows an example where the lower surface 92sL of the light source cover 92 is a circular horizontal surface with a central circular hole. The lower surface 92sL of the light source cover 92 includes an inner perimeter 92ci surrounding the central axis CL of the light source cover 92, and an outer perimeter 92co surrounding the inner perimeter 92ci. The inner perimeter 92ci of the lower surface 92sL of the light source cover 92 is a circle centrally located on the central axis CL of the light source cover 92. The outer perimeter 92co of the lower surface 92sL of the light source cover 92 is a circle concentric with the inner perimeter 92ci of the lower surface 92sL of the light source cover 92. The inner perimeter 92ci of the lower surface 92sL of the light source cover 92 can also be a shape other than a circle. The same applies to the outer perimeter 92co of the lower surface 92sL of the light source cover 92. The outer periphery 92co of the lower surface 92sL of the light source cover 92 may be eccentric relative to the inner periphery 92ci of the lower surface 92sL of the light source cover 92, or it may be a shape that is not similar to the inner periphery 92ci of the lower surface 92sL of the light source cover 92.

As shown in Figure 6, the inner peripheral surface 92si of the light source cover 92 opens into the lower surface 92sL of the light source cover 92. The lower end of the inner peripheral surface 92si of the light source cover 92 corresponds to the inner periphery 92ci of the lower surface 92sL of the light source cover 92. The inner periphery 92ci of the lower surface 92sL of the light source cover 92 forms a central opening 92op at the center of the lower surface 92sL of the light source cover 92. In the example shown in Figure 6, the central opening 92op is a circle centrally located on the central axis CL of the light source cover 92. The inner periphery 92ci of the lower surface 92sL of the light source cover 92 corresponds to the outer periphery of the central opening 92op. The space inside the inner peripheral surface 92si of the light source cover 92 communicates with the space below the lower surface 92sL of the light source cover 92 through the central opening 92op.

Figure 6 shows an example where the lower surface 92sL of the light source cover 92 is horizontal from the inner perimeter 92ci of the lower surface 92sL to the outer perimeter 92co of the lower surface 92sL. The lower surface 92sL of the light source cover 92 can be a curved surface with a continuously varying angle of inclination relative to the horizontal plane, or it can be an inclined surface with a fixed angle of inclination relative to the horizontal plane. The lower surface 92sL of the light source cover 92 can also include at least one of a curved portion, an inclined portion, and a straight portion, and a horizontal portion.

The light source cover 92 houses the light source 91. The light source 91 is a halogen lamp. The light source 91 can be an LED (light emitting diode) lamp, a xenon lamp, or a carbon heater, or it can be a laser light source such as a VCSEL (Vertical Cavity Surface Emitting Laser), or other light sources.

Figure 6 shows an example of a light source 91 comprising a rod-shaped light-emitting tube 91p and two end blocks 91b mounted at both ends of the light-emitting tube 91p. The light-emitting tube 91p includes: a horizontal annular portion 91a surrounding the central axis CL of the light source cover 92; and two straight portions 91s extending upward from both ends of the annular portion 91a. The annular portion 91a surrounds the inner peripheral wall 92i above the bottom wall 92b. The annular portion 91a is positioned below the top wall 92t. The straight portions 91s extend upward from the annular portion 91a to the end blocks 91b. The straight portions 91s are positioned between the inner peripheral wall 92i and the outer peripheral wall 92o. The upper ends of the end blocks 91b are positioned above the upper surface 92su of the light source cover 92. End block 91b is detachably fixed to the ring 96r described below. Light-emitting tube 91p hangs from support arm 96ar via two end blocks 91b.

The heater 90 may or may not have a reflector 91r that reflects the light from the light source 91 toward the bottom wall 92b. The heater 90 may or may not have a heatsink 91h that cools the interior of the light source cover 92. Figure 4 shows an example with a reflector 91r and a heatsink 91h. The reflector 91r and the heatsink 91h are disposed between the inner peripheral wall 92i and the outer peripheral wall 92o. The reflector 91r is disposed above the annular portion 91a. The heatsink 91h is disposed above the reflector 91r. The heatsink 91h may be an air-cooled heatsink that is cooled by airflow, or a water-cooled heatsink that has a flow path for coolant flow.

The inner nozzle 93 is inserted into the space inside the inner peripheral wall 92i of the light source cover 92. The inner nozzle 93 is cylindrical, surrounding the central axis CL of the light source cover 92 on the inner side of the inner peripheral wall 92i. The inner nozzle 93 may be concentric with the inner peripheral wall 92i of the light source cover 92, or it may be eccentric relative to the inner peripheral wall 92i of the light source cover 92. Figure 6 shows an example of the former. The inner nozzle 93 protrudes upward from the inner peripheral wall 92i of the light source cover 92. The inner nozzle 93 extends downward from the following ring cover 96c.

The inner nozzle 93 comprises: a cylindrical inner circumferential surface surrounding the central axis CL of the light source cover 92; and a cylindrical outer circumferential surface surrounding the central axis CL of the light source cover 92 on the outer side of the inner circumferential surface of the inner nozzle 93. Both the inner and outer circumferential surfaces of the inner nozzle 93 are straight cylindrical surfaces with a fixed diameter. A portion or all of the inner circumferential surface of the inner nozzle 93 may have a diameter that changes stepwise or continuously as it approaches the lower end of the inner circumferential surface. The same applies to the outer circumferential surface of the inner nozzle 93. The outer circumferential surface of the inner nozzle 93 is separated from the inner circumferential wall 92i of the light source cover 92 at any point. A portion or all of the outer circumferential surface of the inner nozzle 93 may also be in contact with the inner circumferential wall 92i of the light source cover 92.

The inner nozzle 93 includes: one or more nozzle outlets 93d, which open on the surface of the inner nozzle 93; and an internal flow path 93f, which guides the gas to be ejected from the nozzle outlet 93d. Figure 6 shows an example where the number of nozzle outlets 93d is one. In this example, the nozzle outlet 93d opens on the lower surface of the inner nozzle 93, and the internal flow path 93f extends upward from the nozzle outlet 93d along the central axis CL of the light source cover 92. When the outer peripheral surface of the inner nozzle 93 is separated from the inner peripheral surface 92si of the light source cover 92, the one or more nozzle outlets 93d may also open on the outer peripheral surface of the inner nozzle 93.

The nozzle 93's outlet 93d is positioned above the lower surface 92sL of the light source cover 92. The central opening 92op of the light source cover 92 is positioned below the nozzle 93's outlet 93d. The outlet 93d can be positioned at the same height as the lower surface 92sL of the light source cover 92, or it can be positioned below the lower surface 92sL of the light source cover 92. Figure 6 shows an example where the vertical distance from the lower surface 92sL of the light source cover 92 to the outlet 93d is less than the diameter of the outlet 93d, and the outlet 93d is positioned at the same or approximately the same height as the upper surface of the bottom wall 92b of the light source cover 92.

The inner nozzle 93 ejects gas vertically downward from the nozzle outlet 93d, forming a cylindrical airflow with a diameter equal to or approximately equal to the nozzle outlet 93d, or a frustum-shaped airflow with a diameter that continuously increases in diameter as it moves away from the nozzle outlet 93d. The direction of the gas ejected from the nozzle outlet 93d can be any of the following: inclined upward, inclined downward, or horizontal, as long as the gas ejected from the inner nozzle 93 is supplied between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W.

The substrate processing apparatus 1 includes: an oxidizing gas pipe 93po, which guides oxidizing gas ejected from an inner nozzle 93; and an inert gas pipe 93pi, which guides inert gas ejected from the inner nozzle 93. Figure 6 shows an example where the oxidizing gas is ozone and the inert gas is nitrogen.

An oxidizing gas is a gas that vaporizes organic matter by oxidizing it. The oxidizing gas can be oxygen with a higher oxygen concentration than air, or ozone, or any other gas besides oxygen, as long as it can vaporize organic matter through oxidation. The organic matter can be a substance contained in a sublimable liquid, or a substance remaining on the substrate W after the sublimation of a sublimable substance, or any other substance. The organic matter can be solid, liquid, or semi-solid.

The substrate processing apparatus 1 includes: an oxidizing gas valve 93vo, which switches between an open state and a closed state, wherein the open state allows oxidizing gas flowing toward the inner nozzle 93 in the oxidizing gas pipe 93po to pass through, and the closed state allows the oxidizing gas flowing toward the inner nozzle 93 in the oxidizing gas pipe 93po to stop; and a flow regulating valve 93fo, which changes the flow rate of oxidizing gas supplied from the oxidizing gas pipe 93po to the inner nozzle 93. The substrate processing apparatus 1 further includes: an inert gas valve 93vi, which switches between an open state and a closed state, wherein the open state refers to allowing inert gas flowing toward the inner nozzle 93 through the inert gas pipe 93pi, and the closed state refers to stopping the inert gas flowing toward the inner nozzle 93 in the inert gas pipe 93pi; and a flow regulating valve 93fi, which changes the flow rate of inert gas supplied from the inert gas pipe 93pi to the inner nozzle 93.

If the oxidizing gas valve 93vo is opened, that is, when the oxidizing gas valve 93vo switches from the closed state to the open state, the oxidizing gas is supplied from the oxidizing gas piping 93po to the inner nozzle 93 at a flow rate corresponding to the opening of the flow regulating valve 93fo, and is ejected from the spray outlet 93d of the inner nozzle 93. Similarly, if the inert gas valve 93vi is opened, the inert gas is supplied from the inert gas piping 93pi to the inner nozzle 93 at a flow rate corresponding to the opening of the flow regulating valve 93fi, and is ejected from the spray outlet 93d of the inner nozzle 93. If both the oxidizing gas valve 93vo and the inert gas valve 93vi are opened, the mixture of oxidizing gas and inert gas is ejected from the outlet 93d of the inner nozzle 93. The ratio of oxidizing gas to inert gas in the mixture changes according to the opening degree of the flow regulating valves 93fo and 93fi.

As described above, the oxidizing gas is a gas that vaporizes organic matter by oxidizing it. The oxidizing gas is a gas containing oxides with oxidizing power, such as ozone. The higher the concentration of oxides in the gas ejected from the internal nozzle 93, the better. However, if the oxidizing gas comes into contact with components that are not resistant to oxidizing gases, those components may be corroded by the oxidizing gas. To prevent such corrosion, the concentration of oxides in the mixture of oxidizing and inert gases can be adjusted to a value that oxidizes and vaporizes organic matter while preventing corrosion of components other than the heater 90.

The gas to be ejected from the inner nozzle 93 can be supplied to the inner nozzle 93 after heating, or it can be supplied to the inner nozzle 93 without heating. Figure 6 shows an example of the former. In this example, the substrate processing apparatus 1 includes a gas heater 93h for heating the gas before it is supplied to the inner nozzle 93. If at least one of the oxidizing gas valve 93vo and the inert gas valve 93vi is opened, at least one of the oxidizing gas and the inert gas is heated by the gas heater 93h and then supplied to the inner nozzle 93.

The light source 91, the light source cover 92, and the inner nozzle 93 are supported by the support arm 96ar. As described above, the support arm 96ar includes a head 96h that overlaps with the heater 90 when viewed from above, and a shaft 96s extending horizontally from the head 96h. The head 96h is positioned above the light source cover 92. The head 96h acts as a cover for the light source cover 92, covering the entire internal space of the light source cover 92 from above. The head 96h and the light source cover 92 together form a sealed space for housing the light source 91. The light source 91 is positioned between the head 96h and the light source cover 92 in the vertical direction.

As shown in Figure 4, the head 96h includes: a ring 96r that surrounds the central axis CL of the light source cover 92 above the heater 90; and a ring cover 96c that blocks the space inside the ring 96r from above. The ring 96r is positioned above the light source cover 92. The lower surface of the ring 96r is directly or indirectly opposite the light source cover 92. The lower surface of the ring 96r is horizontal. The ring 96r surrounds the upper end of the end block 91b corresponding to the upper end of the light source 91. The ring cover 96c is positioned above the light source 91 and the ring 96r. The ring cover 96c is detachably fixed to the ring 96r. Figure 4 shows an example of the ring cover 96c being fixed to the ring 96r by bolt B1.

The support arm 96ar further includes an inner ring 96i that surrounds the inner nozzle 93 and the inner peripheral wall 92i of the light source cover 92. The inner ring 96i is detachably fixed to the ring cover 96c. The inner ring 96i is positioned below the ring cover 96c. The inner ring 96i protrudes downward from the center of the ring cover 96c. The inner ring 96i surrounds the central axis CL of the light source cover 92 on the inner side of the ring 96ar. The inner nozzle 93 passes vertically through the inner side of the inner ring 96i. The inner peripheral wall 92i of the light source cover 92 is inserted into the inner ring 96i. The upper end of the inner peripheral wall 92i is positioned on the inner side of the inner ring 96i. The lower surface of the inner ring 96i, which is equivalent to the lower end of the inner ring 96i, is positioned above the lower surface of the inner ring 96r.

The substrate processing apparatus 1 includes a sealing ring 96si that seals the gap between the inner nozzle 93 and the inner ring 96i, or the gap between the inner peripheral wall 92i and the inner ring 96i. Figure 4 shows an example of the sealing ring 96si sealing the gap between the inner peripheral wall 92i and the inner ring 96i. The sealing ring 96si can be an O-ring or an annular gasket, or something else. The sealing ring 96si surrounds the entire circumference of the inner peripheral wall 92i between the inner peripheral wall 92i and the inner ring 96i. The sealing ring 96si is in close contact with both the inner peripheral wall 92i and the inner ring 96i.

To prevent liquids such as treatment fluids or water mist containing such liquids from entering the light source cover 92, the light source cover 92 must be sealed. In particular, it is necessary to prevent oxidizing gases with strong oxidizing power from entering the light source cover 92. On the other hand, since the light source cover 92 needs to be removed from the support arm 96ar when replacing the light source 91, the ease of installation and removal of the light source cover 92 must also be considered.

The sealing ring 96si seals the gap between the light source cover 92 and the support arm 96ar, thus preventing unwanted gases or liquids such as oxidizing gases from entering the light source cover 92. Figure 6 shows an example where the vertical distance from the upper end of the inner peripheral wall 92i to the upper end of the sealing ring 96si is smaller than the outer diameter of the inner peripheral wall 92i. In this example, the insertion depth of the inner peripheral wall 92i into the sealing ring 96si is small, making it easy to install and remove the sealing ring 96si from the light source cover 92.

As shown in Figure 6, the support arm 96ar includes: a support bracket 96bs, which supports the light source cover 92 at a position below the lower surface of the ring 96r; an upper bracket 96bu, which is disposed above the support bracket 96bs; and one or more bolts B2, which allow the support bracket 96bs to move vertically relative to the upper bracket 96bu.

Figure 6 illustrates an example where the support bracket 96bs is supported by a lower bracket 96bL positioned below the support bracket 96bs. In this example, the vertical distance between the upper bracket 96bu and the support bracket 96bs changes by the vertical movement of the lower bracket 96bL relative to the upper bracket 96bu. The support bracket 96bs supports the light source cover 92 by contacting the lower surface of the top wall 92t of the light source cover 92. The support bracket 96bs can contact surfaces of the light source cover 92 other than the lower surface of the top wall 92t, or it can indirectly support the light source cover 92.

The upper bracket 96bu extends upwards from the support bracket 96bs. The lower bracket 96bL is in contact with the lower surface of the support bracket 96bs. Bolt B2 passes vertically through the upper bracket 96bu, the support bracket 96bs, and the lower bracket 96bL. The lower bracket 96bL hangs down from the upper bracket 96bu via bolt B2. The male thread of the upper bracket 96bu engages with the female thread of the lower bracket 96bL. If bolt B2 is rotated relative to the upper bracket 96bu, the lower bracket 96bL moves closer to or away from the upper bracket 96bu. This increases or decreases the vertical distance between the upper bracket 96bu and the support bracket 96bs.

The support bracket 96bs can move vertically relative to the head 96h between a fixed position and an unmounted position. The fixed position refers to the position where the light source cover 92 is fixed to the head 96h, and the unmounted position refers to the position where the light source cover 92 is installed and removed from the head 96h. Figure 6 shows the support bracket 96bs in the fixed position.

When the light source cover 92 is installed on the head 96h, with the upper surface 92su of the light source cover 92 (including the upper surface of the top wall 92t) separated from the lower surface of the ring 96r, the lower surface of the top wall 92t contacts the support bracket 96bs, which is in the mounting/unmounting position. In this state, if the support bracket 96bs is moved upward relative to the upper bracket 96bu, the support bracket 96bs is positioned in a fixed position, and the upper surface 92su of the light source cover 92 presses against the lower surface of the ring 96r. Thus, the light source cover 92 is fixed on the head 96h.

When the light source cover 92 is removed from the head 96h, the support bracket 96bs is lowered from the fixed position to the detachable position. This separates the upper surface 92su of the light source cover 92 from the lower surface of the ring 96r while the lower surface of the top wall 92t is in contact with the support bracket 96bs. When the support bracket 96bs is in the fixed position, the gap between the light source cover 92 and the ring 96r can also be sealed by an O-ring or similar sealing ring 96so. Figure 6 shows an example where a sealing ring 96so is disposed in an annular groove recessed upwards from the lower surface of the ring 96r. The sealing ring 96so covers the entire circumference of the light source cover 92 and is positioned between the light source cover 92 and the ring 96r.

When the light source cover 92 is fixed to the head 96h, at least a portion of the support bracket 96bs is positioned below the lower surface of the top wall 92t. At least a portion of the lower bracket 96bL is also positioned below the lower surface of the top wall 92t. The lower bracket 96bL can pass through the inside of the top wall 92t. The support bracket 96bs may or may not pass through the inside of the top wall 92t. In the latter case, the support bracket 96bs may also include a plurality of segmented brackets that can move horizontally relative to the lower bracket 96bL. In this case, it is sufficient to position a portion of each partition bracket directly below the top wall 92t by moving the plurality of partition brackets horizontally relative to the lower bracket 96bL after positioning the partition brackets at a position lower than the top wall 92t.

Next, the exhaust guide 94 will be explained.

Figure 7A is an enlarged view of a portion of Figure 4. Figure 7B is a cross-sectional view of the exhaust guide 94. The two-point chain in Figure 7A represents a straight cylindrical surface whose central axis coincides with the central axis CL of the light source cover 92. Figure 7B shows a cross-section of the exhaust guide 94 along this cylindrical surface. In Figures 7A and 7B, the exhaust ring 94r is drawn as a single integral component. The exhaust ring 94r can also be a plurality of mutually fixed components.

As described above, the processing unit 2 includes an exhaust guide 94 that draws in gas supplied by the inner nozzle 93 to the space between the substrate W and the heater 90. The exhaust guide 94 is cylindrical, surrounding the central axis CL of the light source cover 92. The exhaust guide 94 includes: an exhaust ring 94r surrounding the central axis CL of the light source cover 92; a flange 94f protruding outward from the upper end of the exhaust ring 94r throughout its entire circumference; and an exhaust pipe 94t protruding outward from the exhaust ring 94r at a position lower than the flange 94f. Figure 7A shows an example where the exhaust ring 94r is a straight cylinder, the flange 94f is a horizontal plate-shaped ring concentric with the exhaust ring 94r, and the exhaust pipe 94t is a horizontal cylinder.

The exhaust guide 94 is supported on the support arm 96ar. The exhaust guide 94 hangs down from the support arm 96ar. The exhaust guide 94 overlaps with the support arm 96ar when viewed from above. Figure 7A shows an example of the exhaust guide 94 being detachably fixed to the support arm 96ar by bolts B3 inserted into through holes in the flange 94f. The method of fixing the exhaust guide 94 relative to the support arm 96ar is not limited to this.

The flange 94f of the exhaust guide 94 and the top wall 92t of the light source cover 92 are positioned opposite each other to the exhaust ring 94r of the exhaust guide 94 and the outer peripheral wall 92o of the light source cover 92. With the exhaust guide 94 and the light source cover 92 fixed to the support arm 96ar, at least a portion of the flange 94f is positioned at the same height as the top wall 92t. Figure 7A shows an example where the upper surface of the flange 94f is positioned at the same height as the upper surface of the top wall 92t, and the lower surface of the flange 94f is positioned below the lower surface of the top wall 92t. Alternatively, the entire flange 94f may be positioned above or below the top wall 92t.

The exhaust guide 94 includes: an inner peripheral surface 94si that surrounds the central axis CL of the light source cover 92; and an outer peripheral surface 94so that surrounds the central axis CL of the light source cover 92 outside the inner peripheral surface 94si. The exhaust guide 94 further includes: an upper surface 94su that is located at the uppermost part of the exhaust guide 94; and a lower surface 94sL that is located at the lowermost part of the exhaust guide 94.

Figure 7A shows an example where the inner circumferential surface of the exhaust ring 94r corresponds to the inner circumferential surface 94si of the exhaust guide 94. In this example, the outer circumferential surface of the exhaust ring 94r corresponds to the outer circumferential surface 94so of the exhaust guide 94, the upper surfaces of the exhaust ring 94r and the flange 94f correspond to the upper surface 94su of the exhaust guide 94, and the lower surface of the exhaust ring 94r corresponds to the lower surface 94sL of the exhaust guide 94. The outer circumferential surface of the exhaust ring 94r extends downward from the lower surface of the flange 94f.

In the example shown in Figure 7A, the upper surface 94su and the lower surface 94sL of the exhaust guide 94 are two annular horizontal surfaces. The lower surface 94sL of the exhaust guide 94 faces directly towards the upper surface of the substrate W. The exhaust guide 94 is smaller than the substrate W when viewed from above. The outer diameter of the lower surface 94sL of the exhaust guide 94 may not reach the radius of the substrate W. The outer diameter of the lower surface 94sL of the exhaust guide 94 is greater than the height of the exhaust guide 94 (the vertical distance from the lower surface 94sL of the exhaust guide 94 to the upper surface 94su of the exhaust guide 94).

The inner circumferential surface 94si and the outer circumferential surface 94so of the exhaust guide 94 are disposed between the upper surface 94su and the lower surface 94sL of the exhaust guide 94. The inner circumferential surface 94si of the exhaust guide 94 is a straight cylindrical surface. The outer circumferential surface 94so of the exhaust guide 94 is a straight cylindrical surface concentric with the inner circumferential surface 94si of the exhaust guide 94. The central axis of the inner circumferential surface 94si and the outer circumferential surface 94so of the exhaust guide 94 is located on the central axis CL of the light source cover 92.

A portion or all of the inner circumferential surface 94si of the exhaust guide 94 may have a diameter that changes stepwise or continuously as it approaches the lower end of the inner circumferential surface 94si. The horizontal cross-section of the inner circumferential surface 94si of the exhaust guide 94 may also be a shape other than a circle. The same applies to the outer circumferential surface 94so of the exhaust guide 94 regarding diameter and cross-section. The outer circumferential surface 94so of the exhaust guide 94 may be eccentric relative to the inner circumferential surface 94si of the exhaust guide 94, or it may have a shape that is not similar to the inner circumferential surface 94si of the exhaust guide 94.

The inner circumferential surface 94si of the exhaust guide 94 surrounds the outer circumferential surface 92so of the light source cover 92. The inner circumferential surface 94si of the exhaust guide 94 is separated from the outer circumferential surface 92so of the light source cover 92 at any point. Alternatively, a portion or all of the inner circumferential surface 94si of the exhaust guide 94 may be in contact with the outer circumferential surface 92so of the light source cover 92.

The distance between the outer peripheral surface 92so of the light source cover 92 and the inner peripheral surface 94si of the exhaust guide 94 on the radial Dr of the light source cover 92 can be equal to or different from the thickness of the exhaust guide 94, i.e., the distance from the inner peripheral surface 94si of the exhaust guide 94 to the outer peripheral surface 94so of the exhaust guide 94 on the radial Dr of the light source cover 92. Figure 7A shows an example where the distance between the outer peripheral surface 92so of the light source cover 92 and the inner peripheral surface 94si of the exhaust guide 94 on the radial Dr of the light source cover 92 is smaller than the thickness of the exhaust guide 94.

Next, the flow path of the exhaust guide 94 for the guiding gas will be explained.

As shown in Figure 7A, the exhaust guide 94 includes: at least one suction port 95i that draws in gas ejected from the inner nozzle 93; at least one exhaust port 95o that discharges the gas drawn into the at least one suction port 95i; and an internal flow path 95f that guides the gas from the at least one suction port 95i to the at least one exhaust port 95o.

Figure 7A shows an example where one suction port 95i and one discharge port 95o are each provided. The suction port 95i opens on the lower surface 94sL of the exhaust guide 94. The discharge port 95o opens on the end face of the exhaust pipe 94t that protrudes outward from the outer peripheral surface 94so of the exhaust guide 94. The suction port 95i is continuous around the entire circumference of the light source cover 92. The suction port 95i is an annular suction port that surrounds the central axis CL of the light source cover 92 outside the central opening 92op of the light source cover 92.

Figure 7A shows an example where the suction port 95i is positioned at the same height as the lower surface 92sL of the light source cover 92, and the suction port 95i draws the gas vertically upwards. The suction port 95i can also be positioned above or below the lower surface 92sL of the light source cover 92, as long as it can draw the gas ejected from the inner nozzle 93. The direction in which the suction port 95i draws the gas is not limited to a vertical direction; it can also be a direction that extends obliquely upwards or downwards away from the central axis CL of the light source cover 92, or even a horizontal direction away from the central axis CL of the light source cover 92.

Figure 7A shows an example of an internal flow path 95f comprising multiple overlapping layers in a direction parallel to the central axis CL of the light source cover 92. In this example, five layers are provided in the internal flow path 95f. The five layers, namely layers 1, 2, 3, 4, and 5, are arranged vertically from top to bottom. The gas drawn into the exhaust guide 94 through the suction port 95i passes through layers 5, 4, 3, 2, and 1 in sequence, and is discharged from the exhaust port 95o of the exhaust guide 94 to the outside of the exhaust guide 94.

As shown in Figure 7B, the first layer closest to the outlet 95o among the plurality of layers is a first cylindrical flow path 95ta surrounding the central axis CL of the light source cover 92. The second layer closest to the outlet 95o among the plurality of layers contains a plurality of first linear flow paths 95La spaced apart on the circumferential Dc of the light source cover 92. The third layer closest to the outlet 95o among the plurality of layers is a second cylindrical flow path 95tb surrounding the central axis CL of the light source cover 92. The fourth layer closest to the outlet 95o among the plurality of layers contains a plurality of second linear flow paths 95Lb spaced apart on the circumferential Dc of the light source cover 92. The fifth layer, which is the furthest from the outlet at 95° among the multiple layers, is the third cylindrical flow path 95tc that surrounds the central axis CL of the light source cover 92.

The first cylindrical flow path 95ta extends continuously around the entire circumference of the light source cover 92. The first cylindrical flow path 95ta may also have two ends that separate on the circumferential Dc of the light source cover 92, provided that all first linear flow paths 95La are connected to the first cylindrical flow path 95ta. The same applies to the second cylindrical flow path 95tb and the third cylindrical flow path 95tc. In the case of the third cylindrical flow path 95tc, the third cylindrical flow path 95tc may extend continuously around the entire circumference of the light source cover 92, or it may have two ends that separate on the circumferential Dc of the light source cover 92, provided that all second linear flow paths 95Lb are connected to the third cylindrical flow path 95tc.

In the example shown in Figure 7B, the lower end (upstream end) of the third cylindrical flow path 95tc corresponds to the suction port 95i. Each second linear flow path 95Lb extends vertically from the upper end of the third cylindrical flow path 95tc to the lower end of the second cylindrical flow path 95tb. Each first linear flow path 95La extends vertically from the upper end of the second cylindrical flow path 95tb to the lower end of the first cylindrical flow path 95ta. The first cylindrical flow path 95ta is connected to the discharge port 95o via the downstream flow path 95d described below.

Figure 7A shows an example where the first cylindrical flow path 95ta, the second cylindrical flow path 95tb, and the third cylindrical flow path 95tc are all straight cylinders. The first cylindrical flow path 95ta, the second cylindrical flow path 95tb, and the third cylindrical flow path 95tc are arranged on a straight cylindrical surface whose central axis coincides with the central axis CL of the light source cover 92 (on the chain of two points shown in Figure 7A). The thickness of the first cylindrical flow path 95ta, that is, the distance from the inner circumferential surface of the first cylindrical flow path 95ta to the radial Dr of the light source cover 92 on the outer circumferential surface of the first cylindrical flow path 95ta, is fixed at any position. The same applies to the second cylindrical flow path 95tb and the third cylindrical flow path 95tc. The inner diameter of the first cylindrical flow path 95ta is equal to the inner diameter of the second cylindrical flow path 95tb, and equal to the inner diameter of the third cylindrical flow path 95tc. The outer diameter of the first cylindrical flow path 95ta is equal to the outer diameter of the second cylindrical flow path 95tb, and equal to the outer diameter of the third cylindrical flow path 95tc.

A plurality of first linear flow paths 95La extend vertically on a vertical cylindrical surface (on the two-point chain shown in Figure 7A) whose central axis coincides with the central axis CL of the light source cover 92. A plurality of second linear flow paths 95Lb also extend vertically on this cylindrical surface. The distance from the central axis CL of the light source cover 92 to the radial Dr of the light source cover 92 of the first linear flow path 95La is equal to the distance from the central axis CL of the light source cover 92 to the radial Dr of the light source cover 92 of the second linear flow path 95Lb. The distance from the central axis CL of the light source cover 92 to the radial Dr of the light source cover 92 of the first linear flow path 95La is equal to the distance from the central axis CL of the light source cover 92 to the radial Dr of the light source cover 92 of the first cylindrical flow path 95ta. The distances to the second cylindrical flow path 95tb and the third cylindrical flow path 95tc are also the same.

As shown in Figure 7B, the upper ends of a plurality of first linear flow paths 95La are arranged at equal heights. The lower ends of a plurality of first linear flow paths 95La are arranged at equal heights. The same applies to the upper and lower ends of a plurality of second linear flow paths 95Lb. The height (vertical length, as follows) of the first linear flow path 95La may be equal to or different from the height (vertical length, as follows). The height of the first linear flow path 95La may be equal to or different from the height of at least one of the first cylindrical flow path 95ta, the second cylindrical flow path 95tb, and the third cylindrical flow path 95tc. The same applies to the height of the second linear flow path 95Lb.

Figure 7B shows an example where the height of the first linear flow path 95La is equal to the heights of the first cylindrical flow path 95ta and the third cylindrical flow path 95tc, but greater than the heights of the second linear flow path 95Lb and the second cylindrical flow path 95tb. In this example, each of the first linear flow paths 95La is straight from the first cylindrical flow path 95ta to the second cylindrical flow path 95tb, and each of the second linear flow paths 95Lb is straight from the second cylindrical flow path 95tb to the third cylindrical flow path 95tc. At least one of the plurality of first linear flow paths 95La may also be inclined relative to the straight surface. The same applies to the plurality of second linear flow paths 95Lb. For example, the first linear flow path 95La may also be inclined in at least one of the radial Dr and circumferential directions of the light source cover 92.

As shown in Figure 7B, a plurality of first linear flow paths 95La are arranged at equal intervals on the circumferential Dc of the light source cover 92. A plurality of second linear flow paths 95Lb are also arranged at equal intervals on the circumferential Dc of the light source cover 92. The number of first linear flow paths 95La may be equal to or different from the number of second linear flow paths 95Lb. The spacing of the first linear flow paths 95La represents the shortest distance between the central axes of the two nearest first linear flow paths 95La on the circumferential Dc of the light source cover 92. The spacing of the second linear flow paths 95Lb is similar. The spacing of the first linear flow paths 95La may be equal to or different from the spacing of the second linear flow paths 95Lb.

The spacing between the first linear flow paths 95La is greater than the diameter of the first linear flow path 95La. The spacing between the second linear flow paths 95Lb is greater than the diameter of the second linear flow path 95Lb. The diameter of the first linear flow path 95La may be equal to or different from the diameter of the second linear flow path 95Lb. The spacing between the first linear flow paths 95La may be equal to or different from the height of the first linear flow path 95La. The same applies to the spacing between the second linear flow paths 95Lb. Figure 7B shows an example where the spacing between the first linear flow paths 95La is shorter than the height of the first linear flow path 95La, and the spacing between the second linear flow paths 95Lb is shorter than the height of the second linear flow path 95Lb.

Figure 7B shows an example where, when viewed along the axial direction Da of the light source cover 92, at least one of the plurality of first linear flow paths 95La does not overlap with any of the second linear flow paths 95Lb. In other words, in this example, even if the plurality of first linear flow paths 95La are extended along the axial direction Da of the light source cover 92, at least one of the plurality of first linear flow paths 95La will not intersect with any of the second linear flow paths 95Lb. In this example, it is also possible that all first linear flow paths 95La do not overlap with any of the second linear flow paths 95Lb. In Figure 7B, the two two-point chains disposed on the second cylindrical flow path 95tb are equivalent to the lines obtained by extending the left end of the first linear flow path 95La along the axial direction Da of the light source cover 92.

The internal flow path 95f of the exhaust guide 94 includes at least one downstream flow path 95d extending from the layer closest to the exhaust outlet 95o among a plurality of layers to at least one exhaust outlet 95o. In the example shown in Figure 7A, the number of exhaust outlets 95o is one, and therefore the number of downstream flow paths 95d is also one. In this example, the downstream flow path 95d extends from the first cylindrical flow path 95ta to the exhaust outlet 95o. The downstream flow path 95d is formed by the exhaust pipe 94t. The upstream end of the downstream flow path 95d opens on the inner surface of the first cylindrical flow path 95ta. The downstream end of the downstream flow path 95d opens on the end face of the exhaust pipe 94t. The downstream end of the downstream flow path 95d corresponds to the exhaust outlet 95o.

The downstream flow path 95d extends horizontally from the first cylindrical flow path 95ta to the outlet 95o in a direction orthogonal to the central axis CL of the light source cover 92. The central axis of the downstream flow path 95d is horizontal from its upstream end to its downstream end. The central axis of the downstream flow path 95d may also be inclined relative to the horizontal plane. The central axis of the downstream flow path 95d may be a straight line or a curve extending from its upstream end to its downstream end, and may include one or more straight sections and one or more curved sections. The central axis of the downstream flow path 95d may extend along the tangent of the first cylindrical flow path 95ta, or may be inclined relative to the tangent and normal of the first cylindrical flow path 95ta.

The substrate processing apparatus 1 includes an exhaust pipe 95p that transmits the suction force of a suction force generating device 95g, such as a pump or suction device, to an exhaust guide 94. The exhaust pipe 95p is installed in an exhaust pipe 94t. When the suction force generating device 95g generates suction force, gas is drawn into the internal flow path 95f from the suction port 95i and then discharged from the exhaust port 95o to the exhaust pipe 95p. When the heater 90 is positioned above the substrate W, and the suction force generating device 95g generates suction force, an airflow is formed that flows radially from the lower surface 92sL of the light source cover 92 to the upper surface of the substrate W towards the suction port 95i. This airflow passes through the suction port 95i, the internal flow path 95f, and the exhaust port 95o and is drawn in by the suction force generating device 95g.

Since the upstream end of the downstream flow path 95d of the exhaust guide 94 is located between the upper and lower ends of the first cylindrical flow path 95ta of the exhaust guide 94, if the suction generating device 95g generates suction force, an airflow will be formed in the first cylindrical flow path 95ta that flows towards the outlet 95o along the circumferential Dc of the light source cover 92. Thus, the suction force of the suction generating device 95g is dispersed in the first cylindrical flow path 95ta along the circumferential Dc of the light source cover 92, and transmitted from the first cylindrical flow path 95ta to all the first linear flow paths 95La. Subsequently, the suction force of the suction generating device 95g is transmitted from all the first linear flow paths 95La to the second cylindrical flow path 95tb, and then from the second cylindrical flow path 95tb to all the second linear flow paths 95Lb. In this way, the gas is drawn from the entire circumference of the suction port 95i to the third cylindrical flow path 95tc, and then flows from the third cylindrical flow path 95tc to all the second linear flow paths 95Lb.

As described above, when observed along the axial direction Da of the light source cover 92, at least one of the plurality of first linear flow paths 95La does not overlap with any of the second linear flow paths 95Lb. When observed along the axial direction Da of the light source cover 92, if the first linear flow path 95La overlaps with the second linear flow path 95Lb, the suction force of the gas drawn from the first linear flow path 95La is hardly distributed along the circumferential direction Dc of the light source cover 92 to the second linear flow path 95Lb within the second cylindrical flow path 95tb. Conversely, when the first linear flow path 95La is offset from the second linear flow path 95Lb on the circumferential Dc of the light source cover 92, the suction force of the gas drawn from the first linear flow path 95La is dispersed along the circumferential Dc of the light source cover 92 on the second cylindrical flow path 95tb and then transmitted to the second linear flow path 95Lb. In this way, the suction force of the suction force generating device 95g is dispersed not only in the first cylindrical flow path 95ta, but also in the second cylindrical flow path 95tb along the circumferential Dc of the light source cover 92, thereby enabling the suction port 95i to uniformly draw in gas.

Next, the electrical configuration of the substrate processing apparatus 1 will be explained.

Figure 8 is a block diagram showing the electrical configuration of the substrate processing device 1. The control device 3 includes at least one computer. The computer includes a computer body 3a and a peripheral device 3d connected to the computer body 3a. The computer body 3a includes a CPU 3b (central processing unit) that executes various commands and memory 3c that stores information. The peripheral device 3d includes a memory 3e for storing information that should be sent and received between the program P and the memory 3c, a reader 3f for reading information from the removable media RM, and a communication device 3g for communicating with other devices such as the host computer.

The control device 3 is connected to the input device and the display device. The input device is operated when an operator, such as a user or maintenance personnel, inputs information into the board processing device 1. The information is displayed on the screen of the display device. The input device can be any of a keyboard, pointing device, and touch panel, or other devices. A touch panel display that serves as both an input device and a display device can also be provided on the board processing device 1.

CPU3b executes program P stored in memory 3e. Program P in memory 3e can be pre-installed on control device 3, or it can be transferred from removable media RM to memory 3e via reader 3f, or it can be transferred from external devices such as an autocomputer to memory 3e via communication device 3g.

Memory 3c refers to volatile memory that requires power to retain its properties. Storage 3e and removable media RM refer to non-volatile memory that retains its properties even without power. Storage 3e includes, for example, magnetic memory devices such as hard disk drives. Removable media RM includes, for example, semiconductor memory such as optical discs like CD-ROMs or memory cards. Removable media RM is an example of a recording medium that records a program P and can be read by a computer. Removable media RM is non-transitory tangible media.

The memory 3e stores multiple recipes. Each recipe specifies the processing content, conditions, and procedures for the substrate W. At least one of these processing content, conditions, and procedures differs between the multiple recipes. The control device 3 controls the substrate processing device 1 to process the substrate W according to the recipes specified by the host computer. The control device 3 has been programmed to perform the following steps.

Next, an example of the processing of substrate W will be explained.

Figure 9 is a step diagram illustrating an example of the processing of substrate W performed by substrate processing apparatus 1. Hereinafter, refer to Figures 2, 6 and 9.

The substrate W to be processed is, for example, a semiconductor wafer such as a silicon wafer. The substrate W may be a substrate W with a pattern P1 (see Figure 10A) formed on the front side of the substrate W, or it may be a substrate W without a pattern P1 formed on the front side of the substrate W. In the latter case, the pattern P1 may be formed by the first solution supply step or the second solution supply step described below.

When the substrate W is processed by the substrate processing device 1, a loading step is performed, that is, the substrate W is loaded into the chamber 4 (step S1 in Figure 9).

Specifically, with the blocking component 51 in the upper position, all barriers 24 in the lower position, and all scanning nozzles in the standby position, the central robot CR (refer to Figure 1A) supports the substrate W with its hand Hc while simultaneously inserting the hand Hc into the chamber 4. Then, with the substrate W facing upwards, the central robot CR places the substrate W on the hand Hc onto a plurality of clamping pins 11. The plurality of clamping pins 11 then press against the end face of the substrate W, securing it. After placing the substrate W onto the rotating clamp 10, the central robot CR withdraws the hand Hc from inside the chamber 4.

Next, gas valves 64 and 84 are opened, and nitrogen gas begins to be ejected from the central opening 61 of the blocking component 51 and the central opening 81 of the rotating base 12. This fills the space between the substrate W and the blocking component 51 with nitrogen gas. Similarly, the space between the substrate W and the rotating base 12 is filled with nitrogen gas. Meanwhile, the barrier lifting unit 27 raises at least one barrier 24 from its lower position to its upper position. Then, the rotary motor 14 is driven to start rotating the substrate W (step S2 in Figure 9).

Next, the first liquid supply step is performed, that is, DHF, as one example of a liquid, is supplied to the upper surface of the substrate W to form a liquid film of DHF covering the entire upper surface of the substrate W (step S3 in Figure 9).

Specifically, with the blocking component 51 and at least one barrier 24 in the upper position, the first nozzle moving unit 34a moves the first chemical nozzle 31a and the first rinsing fluid nozzle 35a from the standby position to the processing position. Then, the first chemical valve 33a opens, and the first chemical nozzle 31a begins to spray DHF. After a predetermined time, the first chemical valve 33a closes, and the spraying of DHF stops.

After the DHF sprayed from the first liquid nozzle 31a impacts the upper surface of the substrate W rotating at the first liquid supply speed, it flows outward along the upper surface of the substrate W by centrifugal force. Therefore, DHF is supplied to the entire upper surface of the substrate W, forming a liquid film of DHF covering the entire upper surface of the substrate W. When the first liquid nozzle 31a sprays DHF, the first nozzle moving unit 34a can move the impact position of the DHF on the upper surface of the substrate W through the central portion and the outer periphery, or it can keep the impact position stationary at the central portion. The same applies to the treatment fluid supplied to the upper surface of the substrate W after the DHF, regardless of whether the impact position is moved.

Next, the first rinsing solution supply step is performed, that is, pure water, as one example of rinsing solution, is supplied to the upper surface of the substrate W to rinse away the DHF on the substrate W (step S4 in Figure 9).

Specifically, with the blocking component 51 in the upper position, at least one barrier 24 in the upper position, and the first liquid spray nozzle 31a and the first rinsing liquid spray nozzle 35a in the processing position, the first rinsing liquid valve 37a opens, and the first rinsing liquid spray nozzle 35a begins to spray pure water. Before the pure water is sprayed, the barrier lifting unit 27 can also move at least one barrier 24 linearly to switch the barrier 24 that receives the liquid discharged from the substrate W.

The pure water sprayed from the first rinsing fluid nozzle 35a impacts the upper surface of the substrate W, which rotates at the first rinsing fluid supply speed, and flows outward along the upper surface of the substrate W by centrifugal force. The DHF on the substrate W is replaced by the pure water sprayed from the first rinsing fluid nozzle 35a. This forms a pure water film covering the entire upper surface of the substrate W. After a predetermined time, the first rinsing fluid valve 37a closes, and the spraying of pure water stops. Subsequently, the first nozzle moving unit 34a moves the first liquid nozzle 31a and the first rinsing fluid nozzle 35a to the standby position.

Next, the second liquid supply step is performed, that is, SC1, which is one example of a liquid, is supplied to the upper surface of the substrate W to form a liquid film of SC1 covering the entire upper surface of the substrate W (step S5 in Figure 9).

Specifically, with the blocking component 51 in the upper position and at least one barrier 24 in the upper position, the second nozzle moving unit 34b moves the second liquid nozzle 31b and the second rinsing liquid nozzle 35b from the standby position to the processing position. Subsequently, the second liquid valve 33b opens, and the second liquid nozzle 31b begins to spray SC1. Before the spraying of SC1 begins, the barrier lifting unit 27 can also move at least one barrier 24 linearly to switch the barrier 24 that receives the liquid discharged from the substrate W.

After the SC1 ejected from the second liquid nozzle 31b impacts the upper surface of the substrate W, which rotates at the second liquid supply speed, it flows outward along the upper surface of the substrate W due to centrifugal force. The pure water on the substrate W is replaced by the SC1 ejected from the second liquid nozzle 31b. This forms a liquid film of SC1 covering the entire upper surface of the substrate W. After a predetermined time, the second liquid valve 33b closes, and the ejection of SC1 stops.

Next, the second rinsing solution supply step is performed, that is, pure water, as one example of rinsing solution, is supplied to the upper surface of the substrate W to rinse away SC1 on the substrate W (step S6 in Figure 9).

Specifically, with the blocking component 51 in the upper position, at least one barrier 24 in the upper position, and the second liquid spray nozzle 31b and the second rinsing liquid spray nozzle 35b in the processing position, the second rinsing liquid valve 37b opens, and the second rinsing liquid spray nozzle 35b begins to spray pure water. Before the pure water is sprayed, the barrier lifting unit 27 can also move at least one barrier 24 linearly to switch the barrier 24 that receives the liquid discharged from the substrate W.

The pure water sprayed from the second rinsing fluid nozzle 35b impacts the upper surface of the substrate W, which rotates at the second rinsing fluid supply speed, and flows outward along the upper surface of the substrate W by centrifugal force. The SC1 on the substrate W is replaced by the pure water sprayed from the second rinsing fluid nozzle 35b. This forms a pure water film covering the entire upper surface of the substrate W. After a predetermined time, the second rinsing fluid valve 37b closes, and the spraying of pure water stops. Subsequently, the second nozzle moving unit 34b moves the second chemical nozzle 31b and the second rinsing fluid nozzle 35b to the standby position.

Next, a replacement solution supply step is performed, that is, IPA, as an example of a replacement solution, is supplied to the upper surface of the substrate W to replace the pure water on the substrate W with IPA (step S7 in Figure 9).

Specifically, with at least one barrier 24 in the upper position, the blocking component lifting unit 54 lowers the blocking component 51 from the upper position to the lower position. In this state, the replacement fluid valve 45 opens, and the center nozzle 55 begins to spray IPA. Before the IPA spraying begins, the barrier lifting unit 27 can also linearly move at least one barrier 24 to switch the barrier 24 that receives the liquid discharged from the substrate W.

The IPA ejected from the central nozzle 55 impacts the upper surface of the substrate W, which rotates at the replacement fluid supply speed, and flows outward along the upper surface of the substrate W due to centrifugal force. The pure water on the substrate W is replaced by the IPA ejected from the central nozzle 55. This forms a liquid film of IPA covering the entire upper surface of the substrate W. After a predetermined time, the replacement fluid valve 45 closes, and the ejection of IPA stops. After forming the liquid film of IPA covering the entire upper surface of the substrate W, the central nozzle 55 can be stopped ejecting IPA while the substrate W is rotated at a liquid-covering speed (e.g., a speed greater than 0 and less than 20 rpm).

Next, a sublimation substance containing liquid supply step is performed, that is, a sublimation substance containing liquid is supplied to the upper surface of the substrate W to form a liquid film of sublimation substance containing liquid covering the entire upper surface of the substrate W (step S8 in Figure 9).

Specifically, with the blocking component 51 in the lower position and at least one barrier 24 in the upper position, the sublimation substance containing liquid valve 41 opens, and the center nozzle 55 begins to spray the sublimation substance containing liquid. Before the spraying of the sublimation substance containing liquid begins, the barrier lifting unit 27 can also move at least one barrier 24 linearly to switch the barrier 24 that receives the liquid discharged from the substrate W.

The sublimation-containing liquid ejected from the central nozzle 55 impacts the upper surface of the substrate W, which rotates at the sublimation-containing liquid supply speed, and flows outward along the upper surface of the substrate W by centrifugal force. The IPA on the substrate W is replaced by the sublimation-containing liquid ejected from the central nozzle 55. This forms a liquid film of sublimation-containing liquid covering the entire upper surface of the substrate W. After a predetermined time, the sublimation-containing liquid valve 41 closes, and the ejection of the sublimation-containing liquid stops.

Next, a film thickness reduction step is performed, that is, by removing a portion of the sublimation substance containing liquid on the substrate W, while maintaining the state that the entire upper surface of the substrate W is covered by the liquid film containing the sublimation substance, the film thickness (the thickness of the liquid film) of the sublimation substance containing liquid on the substrate W is reduced (step S9 in Figure 9).

Specifically, with the blocking component 51 in the lower position, the rotating motor 14 maintains the rotational speed of the substrate W at the film thickness reduction rate. This film thickness reduction rate can be equal to or different from the subliminant supply rate. After the ejection of the subliminant-containing liquid on the substrate W stops, it is also discharged outwards from the substrate W by centrifugal force. Therefore, the thickness of the liquid film of the subliminant-containing liquid on the substrate W decreases. After a certain amount of the subliminant-containing liquid on the substrate W is discharged, the amount of subliminant-containing liquid discharged from the substrate W per unit time decreases to zero or approximately zero. Thus, the thickness of the liquid film of the subliminant-containing liquid on the substrate W stabilizes at a value corresponding to the rotational speed of the substrate W.

Next, a curing film formation step is performed, that is, the solvent evaporates from the liquid containing the sublimation substance on the substrate W, and a curing film SF containing the sublimation substance is formed on the substrate W (see Figure 10B) (step S10 of Figure 9).

Specifically, with the shut-off component 51 in the lower position, the rotary motor 14 maintains the rotational speed of the substrate W at the curing film formation speed. The curing film formation speed can be equal to or different from the sublimation material supply speed. Then, the gas valve 57 is opened, causing the central nozzle 55 to begin spraying nitrogen gas. Alternatively, in addition to opening the gas valve 57, the opening of the flow regulating valve 65 can be changed to increase the flow rate of nitrogen gas sprayed from the central opening 61 of the shut-off component 51, or the opening of the flow regulating valve 65 can be changed to increase the flow rate of nitrogen gas sprayed from the central opening 61 of the shut-off component 51, thereby replacing the operation of opening the gas valve 57.

After the substrate W begins to rotate at the film-forming speed, the evaporation of the sublimation-containing liquid is promoted, and a portion of the sublimation-containing liquid on the substrate W evaporates. Because the vapor pressure of the solvent is higher than that of the sublimation-containing solute, the solvent evaporates at a greater rate than the evaporation rate of the sublimation-containing substance. Therefore, the concentration of the sublimation-containing substance gradually increases, while the film thickness of the sublimation-containing liquid gradually decreases. The freezing point of the sublimation-containing liquid increases with the increase in the concentration of the sublimation-containing substance. Once the freezing point of the sublimation-containing liquid matches the temperature of the sublimation-containing liquid, the sublimation-containing liquid begins to solidify, forming a solidified film SF that covers the entire surface of the substrate W.

Next, a sublimation step is performed, that is, the cured film SF on the substrate W is sublimated and removed from the upper surface of the substrate W (step S11 in Figure 9).

Specifically, with the shut-off component 51 in the lower position, the rotary motor 14 maintains the rotational speed of the substrate W at the sublimation speed. The sublimation speed can be equal to or different from the supply speed of the sublimation substance. Furthermore, with the gas valve 57 closed, the gas valve 57 is opened, causing the central nozzle 55 to begin spraying nitrogen gas. Alternatively, in addition to opening the gas valve 57, the opening degree of the flow regulating valve 65 can be changed to increase the flow rate of nitrogen gas sprayed from the central opening 61 of the shut-off component 51, or the opening degree of the flow regulating valve 65 can be changed to increase the flow rate of nitrogen gas sprayed from the central opening 61 of the shut-off component 51, thereby replacing the operation of opening the gas valve 57.

After the substrate W begins to rotate at a sublimation speed, the cured film SF on the substrate W begins to sublimate, generating a gas containing sublimation substances from the cured film SF. The gas generated from the cured film SF (containing sublimation substances) flows radially in the space between the substrate W and the blocking member 51, and is discharged from the top of the substrate W. After a certain period of time after the sublimation begins, the cured film SF is completely removed from the substrate W.

Next, an organic matter removal step is performed, that is, removing the organic matter remaining on the substrate W after the cured film SF is removed from the substrate W (step S12 in Figure 9).

Specifically, the heater moving unit 96 moves the heater 90, the inner nozzle 93, and the exhaust guide 94 from the standby position to the processing position. Then, the oxidizing gas valve 93vo opens, and the inner nozzle 93 begins to eject oxidizing gas. Subsequently, the light source 91 begins to emit light, and the suction force generating device 95g begins to generate suction force. The light source 91 can begin emitting light simultaneously with the inner nozzle 93 starting to eject oxidizing gas, or it can begin emitting light before or after the inner nozzle 93 starts ejecting oxidizing gas. The same applies to the timing of the suction force generating device 95g starting to generate suction force. The timing of the light source 91 starting to emit light can be the same as or different from the timing of the suction force generating device 95g starting to generate suction force.

Oxidizing gas ejected from the inner nozzle 93 flows radially from the central opening 92op of the light source cover 92 between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W. Subsequently, the oxidizing gas is drawn in by the suction port 95i of the exhaust guide 94. The oxidizing gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is heated by the light from the light source 91. While the rotating motor 14 rotates the substrate W at an organic matter removal speed, the heater moving unit 96 moves the heater 90 horizontally. In this way, the entire upper surface of the substrate W is supplied with oxidizing gas, and organic matter is removed from the entire upper surface of the substrate W.

After a predetermined time has elapsed since the oxidizing gas valve 93vo opened, it closes, and the inner nozzle 93 stops emitting oxidizing gas. Simultaneously, before, or after the oxidizing gas valve 93vo closes, the inert gas valve 93vi opens, and the inner nozzle 93 begins emitting inert gas. The light source 91 may stop emitting light simultaneously with the closing of the oxidizing gas valve 93vo, or it may stop emitting light before or after the closing of the oxidizing gas valve 93vo. The light source 91 may also stop emitting light after the inner nozzle 93 begins emitting inert gas.

The oxidizing gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is squeezed outward by the inert gas ejected from the inner nozzle 93 and drawn in by the suction port 95i of the exhaust guide 94. Thus, the space between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is filled with inert gas. After a predetermined time, the inert gas valve 93vi closes after the inert gas valve 93vi is opened, and the inner nozzle 93 stops ejecting inert gas.

After the inert gas emission stops, the rotary motor 14 stops, and the rotation of the substrate W stops (step S13 in Figure 9). At the same time as, before, or after the rotation of the substrate W stops, while the light source 91 stops emitting light, the heater moving unit 96 moves the heater 90, the inner nozzle 93, and the exhaust guide 94 from the processing position to the standby position. The suction force generating device 95g can stop generating suction force at the same time as the inert gas emission stops, or it can stop generating suction force before or after the inert gas emission stops.

Next, the removal step is performed, that is, the substrate W is removed from the chamber 4 (step S14 in Figure 9).

Specifically, the blocking component lifting unit 54 raises the blocking component 51 to the upper position, and the barrier lifting unit 27 lowers all barriers 24 to the lower position. Then, gas valves 64 and 84 close, stopping the emission of nitrogen from the central opening 61 of the blocking component 51 and the central opening 81 of the rotating base 12. Subsequently, the central robot CR inserts its hand Hc into the chamber 4. After the plurality of chuck pins 11 release the substrate W from its grip, the central robot CR supports the substrate W on the rotating chuck 10 using its hand Hc. Then, while supporting the substrate W with its hand Hc, the central robot CR withdraws the hand Hc from inside the chamber 4. In this way, the processed substrate W is removed from the chamber 4.

Secondly, the steps for removing organic matter are explained in more detail.

Figures 10A to 10E are schematic cross-sectional views of the substrate W. Figure 11 is a schematic diagram showing the state in which oxidizing gas is ejected from the inner nozzle 93 while the exhaust guide 94 draws in the oxidizing gas. Figure 12 is a schematic diagram showing the state in which, after oxidizing gas is supplied to the substrate W, inert gas is ejected from the inner nozzle 93 while the exhaust guide 94 draws in the inert gas. In Figures 11 and 12, the plurality of straight lines extending downward from the light source 91 represent the light emitted by the light source 91.

As shown in Figures 10A and 10B, in the curing film formation step (step S10 in Figure 9), the sublimation material on the substrate W contains liquid that transforms into a curing film SF. As shown in Figures 10B and 10C, in the sublimation step (step S11 in Figure 9), the curing film SF is removed from the substrate W through sublimation.

As shown in Figure 10C, after the cured film SF is removed from the substrate W, organic matter may sometimes remain on the substrate W. The black dots in Figures 10C and 10D represent organic matter. The dots in Figures 10C and 10D are only schematic representations of organic matter, and the actual shape of the organic matter may not be consistent with the shape of the organic matter shown in Figures 10C and 10D.

The organic matter remaining after removing the SF (sulfuric acid) curing film is a substance generated from the SF curing film. This organic matter can be unsublimated sublimable substances or substances formed from the deterioration of sublimable substances. It can originate from sublimable substances or be unrelated to them. It can be sublimable or non-sublimable.

Figure 10E shows the substrate W after organic matter and other residues have been removed. By removing the organic matter from the substrate W as described above in the organic matter removal step (step S12 in Figure 9), the substrate W changes from the state shown in Figure 10D to the state shown in Figure 10E.

Specifically, in the organic matter removal step (step S12 in Figure 9), as shown in Figure 11, the heater moving unit 96 positions the heater 90, the inner nozzle 93, and the exhaust guide 94 above the substrate W. This causes the lower surface 92sL of the light source cover 92 to directly face the upper surface of the substrate W in the vertical direction. At this time, the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W are close enough that the scanning nozzles, such as the first liquid spray nozzle 31a, cannot enter the distance between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W. The vertical distance from the lower surface 92sL of the light source cover 92 to the upper surface of the substrate W can be greater than or less than the radius of the lower surface 92sL of the light source cover 92.

With the lower surface 92sL of the light source cover 92 facing the upper surface of the substrate W, the inner nozzle 93 ejects oxidizing gas. The oxidizing gas ejected from the inner nozzle 93 flows radially from the central opening 92op of the light source cover 92 between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W. Subsequently, the oxidizing gas is drawn in by the suction port 95i of the exhaust guide 94. The flow rate of the gas drawn in by the suction port 95i is defined as the exhaust flow rate, and the flow rate of the gas ejected from the inner nozzle 93 is defined as the supply flow rate. The exhaust flow rate and the supply flow rate are set such that the exhaust flow rate is higher than the supply flow rate. Therefore, it is possible to prevent the oxidizing gas from diffusing outside the suction port 95i and to ensure that the oxidizing gas contacts the upper surface of the substrate W.

The oxidizing gas ejected from the inner nozzle 93 comes into contact with the coated area of the substrate W, which is the area on the upper surface of the substrate W that overlaps with the lower surface 92sL of the light source cover 92 when viewed from above. Organic matter in the coated area is oxidized by the oxidizing gas and turns into gas. The vaporized organic matter, along with the oxidizing gas, flows towards the suction port 95i and is sucked in by the suction port 95i. This prevents organic matter from re-adhering to the substrate W and removes it from the coated area. Furthermore, since the suction port 95i is located near the location where the organic matter vaporizes, the vaporized organic matter can be immediately removed from the substrate W.

The light source 91 emits light in a state where the space between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is filled with oxidizing gas. This heats the covered area of the substrate W (the area on the upper surface of the substrate W that overlaps with the lower surface 92sL of the light source cover 92 when viewed from above) by the light from the light source 91. The light source cover 92 is also heated by the light from the light source 91. The oxidizing gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is heated by the light from the light source 91, and also by the substrate W and the light source cover 92. Furthermore, the oxidizing gas is heated by a gas heater 93h before being supplied to the internal nozzle 93.

The temperature of the light source 91 when heating the substrate W and the oxidizing gas is 200–300°C. The temperature of the light source 91 can also exceed 300°C. As long as it is above room temperature, the temperature of the light source 91 may not reach 200°C. The gas heater 93h heats the oxidizing gas at a temperature above room temperature. When heating the oxidizing gas, the temperature of the gas heater 93h can be equal to or different from the temperature of the light source 91.

If the temperature of the oxidizing gas increases, its activity also increases. This promotes the reaction between the oxidizing gas and organic matter, efficiently and effectively removing residual organic matter from the coated area. That is, it increases the amount of organic matter vaporized by the oxidizing gas or shortens the vaporization time. Furthermore, even if sublimated substances remain on the substrate W, they will be heated and sublimated by the light source 91. The vaporized sublimated substances are then drawn in by the suction port 95i of the exhaust guide 94. Therefore, residues other than organic matter can also be removed from the dried substrate W.

In the organic matter removal step (step S12 in FIG. 9), the control device 3 rotates the substrate W by rotating the rotary chuck 10 (see FIG. 2) and moves the heater 90, etc., horizontally by the heater moving unit 96. As described above, it performs the actions of spraying oxidizing gas from the inner nozzle 93, emitting light from the light source 91, and venting gas through the exhaust guide 94. Through the rotation of the substrate W and the movement of the heater 90, etc., the covered area extends across the entire upper surface of the substrate W. This confines the diffusion range of the oxidizing gas to between the light source cover 92 and the substrate W, while simultaneously supplying oxidizing gas to the entire upper surface of the substrate W. As a result, contact between the oxidizing gas and components other than the heater 90, etc., is prevented, and organic matter is removed from the entire upper surface of the substrate W.

The control device 3 can move the heater 90, etc., in any manner, as long as the covered area passes through the entire upper surface of the substrate W. For example, the control device 3 can move the heater 90, etc., horizontally between a central processing position and an edge processing position (half-scan). The central processing position refers to the position where, from a top view, the heater 90 overlaps with the center of the substrate W held by the rotating chuck 10, and the edge processing position refers to the position where, from a top view, the heater 90 overlaps with the outer periphery of the substrate W held by the rotating chuck 10. Alternatively, the control device 3 can also move the heater 90, etc., horizontally between two edge processing positions (full-scan). These edge processing positions refer to the positions where, from a top view, the heater 90 overlaps with the outer periphery of the substrate W held by the rotating chuck 10.

The horizontal movement speed of the heater 90 and the like can be fixed throughout all sections of its movement, or it can increase or decrease intermittently or continuously as the distance from the rotation axis A1 (see Figure 2) of the substrate W to the heater 90 and the like increases. In the latter case, the movement speed of the heater 90 and the like can also vary only in a certain section. The rotation speed of the substrate W can be fixed regardless of the distance from the rotation axis A1 of the substrate W to the heater 90 and the like, or it can increase or decrease intermittently or continuously as the distance from the rotation axis A1 of the substrate W to the heater 90 and the like increases.

When the rotational speed of the substrate W is constant, if the heater 90 moves closer to the outer periphery of the substrate W, the moving speed of the covered area of the substrate W (the area on the upper surface of the substrate W that overlaps with the lower surface 92sL of the light source cover 92 when viewed from above) relative to the heater 90 increases. Therefore, if the heater 90 moves closer to the outer periphery of the substrate W, the gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W will experience a greater force from the substrate W. In order to further reduce the oxidizing gas reaching the outside of the suction port 95i, the rotational speed of the substrate W can also be reduced as the heater 90 moves closer to the outer periphery of the substrate W.

If the heater 90 moves closer to the outer periphery of the substrate W, it will also move closer to the upstream end of the exhaust pipe 8 (see Figure 2). Therefore, the exhaust flow rate (the flow rate of gas drawn in by the suction port 95i) can also increase as the heater 90 moves closer to the outer periphery of the substrate W. Alternatively, the opening of the exhaust valve 9 (see Figure 2) located in the exhaust pipe 8 can be reduced as the heater 90 moves closer to the outer periphery of the substrate W. This further reduces the amount of oxidizing gas reaching the outer side of the suction port 95i.

The horizontal movement speed of the heater 90 can be the same as or different from the horizontal movement speed of the scanning nozzles such as the first liquid spray nozzle 31a (see Figure 2). The rotation speed of the substrate W in the organic matter removal step (step S12 in Figure 9) can be the same as or different from the rotation speed of the substrate W in steps other than the organic matter removal step (step S12 in Figure 9). When the horizontal movement speed of the heater 90, the horizontal movement speed of the scanning nozzles, or the rotation speed of the substrate W changes in one step, it is sufficient to compare the minimum, maximum, or average values of each speed.

Secondly, the effects of this implementation method will be explained.

In this embodiment, an oxidizing gas that oxidizes and vaporizes organic matter is ejected from the inner nozzle 93. The oxidizing gas flows radially between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W through a central opening 92op formed on the inner periphery of the lower surface 92sL of the light source cover 92. Light from the light source 91 irradiates the substrate W through the lower surface 92sL of the light source cover 92. This heats the substrate W. The oxidizing gas between the light source cover 92 and the substrate W is also heated by the light from the light source 91. This allows the heated oxidizing gas to be supplied to the substrate W.

Oxidizing gas, flowing radially from the central opening 92op of the light source cover 92 along the substrate W, is drawn in by the suction port 95i of the exhaust guide 94. Organic matter oxidized and vaporized by the reaction with the oxidizing gas is also drawn in by the suction port 95i of the exhaust guide 94. The suction port 95i is annular, surrounding the central axis CL of the light source cover 92 outside the central opening 92op. Therefore, oxidizing gas and organic matter are drawn in by the exhaust guide 94 around the entire or nearly entire circumference of the light source cover 92. This narrows the diffusion range of the oxidizing gas and removes vaporized organic matter from the substrate W.

In this embodiment, the outer peripheral wall 92o of the light source cover 92 surrounds the light source 91, and the exhaust guide 94 surrounds the entire circumference of the outer peripheral wall 92o without contacting it. The light from the light source 91 also heats the outer peripheral wall 92o of the light source cover 92. Since the exhaust guide 94 is separate from the outer peripheral wall 92o, the heat transferred from the light source cover 92 to the exhaust guide 94 can be reduced, thus minimizing the temperature rise of the exhaust guide 94. In this way, the exhaust guide 94 can be maintained below its heat resistance temperature (the maximum temperature at which deformation and deterioration will not occur), while the light source 91 can be used to heat the substrate W and the oxidizing gas.

In this embodiment, the top wall 92t of the light source cover 92, which protrudes inward from the outer peripheral wall 92o of the light source cover 92, is supported by the support arm 96ar. Furthermore, the flange 94f of the exhaust guide 94, which protrudes outward from the exhaust ring 94r of the exhaust guide 94, is supported by the support arm 96ar. Although at least a portion of the flange 94f is positioned at the same height as the top wall 92t, since the flange 94f and the top wall 92t protrude in opposite directions relative to the exhaust ring 94r and the outer peripheral wall 92o, even if the exhaust ring 94r moves closer to the outer peripheral wall 92o of the light source cover 92, the flange 94f will not contact the top wall 92t. Therefore, compared to the case where the top wall 92t of the light source cover 92 protrudes outward from the outer peripheral wall 92o of the light source cover 92, the exhaust guide 94 can be brought closer to the light source cover 92, thereby enabling the exhaust guide 94 to be miniaturized. By miniaturizing the exhaust guide 94, the range of oxidation gas diffusion can be further narrowed.

In this embodiment, the gas drawn into the suction port 95i of the exhaust guide 94 passes through the internal flow path 95f of the exhaust guide 94 and is guided to the discharge port 95o of the exhaust guide 94, and discharged from the discharge port 95o to the outside of the exhaust guide 94. The internal flow path 95f of the exhaust guide 94 includes a plurality of second linear flow paths 95Lb, a second cylindrical flow path 95tb, a plurality of first linear flow paths 95La, and a first cylindrical flow path 95ta. The gas drawn into the suction port 95i passes sequentially through the plurality of second linear flow paths 95Lb, second cylindrical flow paths 95tb, a plurality of first linear flow paths 95La, and first cylindrical flow paths 95ta, and is discharged from the discharge port 95o.

A plurality of first linear flow paths 95La are disposed on a cylindrical surface surrounding the central axis CL of the light source cover 92. A plurality of second linear flow paths 95Lb are also disposed on the same cylindrical surface. The first linear flow paths 95La and the second linear flow paths 95Lb are disposed opposite to the second cylindrical flow path 95tb. When viewed along a direction parallel to the central axis CL of the light source cover 92, at least one of the plurality of first linear flow paths 95La does not overlap with any of the plurality of second linear flow paths 95Lb. Therefore, the suction force of the suction port 95i for drawing gas is distributed along the circumference Dc of the light source cover 92 on the second cylindrical flow path 95tb. In this way, gas can be uniformly drawn from the suction port 95i.

In this embodiment, the oxidizing gas is heated by a gas heater 93h and then supplied to the inner nozzle 93. The inner nozzle 93 ejects the oxidizing gas heated by the gas heater 93h, and the light source 91 heats the oxidizing gas ejected from the inner nozzle 93. Therefore, the time it takes for the temperature of the oxidizing gas ejected from the inner nozzle 93 to reach a certain value can be shortened. Because the oxidizing gas is heated by both the gas heater 93h and the light source 91, the light source 91 can be miniaturized without lowering the temperature of the oxidizing gas in contact with the substrate W. By miniaturizing the light source 91, the exhaust guide 94 can be miniaturized, thereby further narrowing the range of oxidizing gas diffusion.

In this embodiment, the inner nozzle 93 ejects at least one of an oxidizing gas and an inert gas. The oxidizing gas includes a gas containing oxides that oxidize organic matter. If the inner nozzle 93 ejects a mixture of oxidizing and inert gas, the concentration of oxides in the gas ejected from the inner nozzle 93 can be reduced. If the inner nozzle 93 ejects only oxidizing gas, the concentration of oxides can be increased. This allows for adjustment of the concentration of oxides in the gas ejected from the inner nozzle 93.

In this embodiment, oxidizing gas is ejected from the inner nozzle 93. Then, while the exhaust guide 94 draws in the gas, inert gas is ejected from the inner nozzle 93. The oxidizing gas between the light source cover 92 and the substrate W is squeezed outward by the inert gas ejected from the inner nozzle 93 and drawn in by the exhaust guide 94. This reliably and quickly removes the oxidizing gas remaining between the light source cover 92 and the substrate W after the ejection of oxidizing gas stops.

In this embodiment, a central nozzle 55, which serves as an example of a sublimation-containing liquid nozzle, sprays a sublimation-containing liquid containing a sublimation-containing substance and supplies it to the substrate W. A central nozzle 55, which also serves as an example of a gas nozzle, sprays gas onto the substrate W to which the sublimation-containing liquid has been supplied. A rotary motor 14 causes the substrate W to rotate. After the substrate W rotates, an airflow is formed along the substrate W.

The airflow formed by at least one of the central nozzle 55 and the rotating motor 14 promotes the evaporation of the solvent contained in the sublimation-containing liquid. The airflow formed by at least one of the central nozzle 55 and the rotating motor 14 lowers the temperature of the sublimation-containing liquid. Due to the evaporation of the solvent, the sublimation-containing liquid precipitates out, forming a cured film SF containing the sublimation-containing liquid on the substrate W. Alternatively, due to the decrease in temperature of the sublimation-containing liquid, the sublimation-containing liquid solidifies, forming a cured film SF containing the sublimation-containing liquid on the substrate W. The airflow formed by at least one of the central nozzle 55 and the rotating motor 14 causes the sublimation of the cured film SF. Thereby, the cured film SF is removed from the substrate W.

The cured film SF sometimes contains unwanted organic matter. After the cured film SF is removed from the substrate W, unwanted organic matter may remain on the substrate W. In such cases, by simultaneously ejecting oxidizing gas from the inner nozzle 93 and emitting light from the light source 91 during and for at least one period after the removal of the cured film SF, the organic matter can be oxidized and vaporized. Alternatively, by drawing in the vaporized organic matter through the exhaust guide 94, the diffusion range of the oxidizing gas can be narrowed, and the vaporized organic matter can be removed from the substrate W.

In this embodiment, the cured film SF containing the sublimation material is removed from the substrate W. Then, the control device 3 starts to spray oxidizing gas from the inner nozzle 93. The oxidizing gas sprayed from the inner nozzle 93 reacts with the useless organic matter remaining on the substrate W after the cured film SF is removed, causing the organic matter to vaporize. Because the oxidizing gas is sprayed from the inner nozzle 93 after the cured film SF is removed, the control of the substrate processing device 1 is simplified compared to the case where the oxidizing gas is sprayed from the inner nozzle 93 when the cured film SF is removed (while the cured film SF is still on the substrate W).

Secondly, other implementation methods will be explained.

The supply of oxidizing gas to the substrate W can begin during the removal of the cured film SF (while the cured film SF is still present on the substrate W), or it can begin after the cured film SF is formed and before the removal of the cured film SF begins. In this case, in order to ensure the space for the heater 90 and the like between the shielding member 51 and the substrate W, the sublimation step (step S11 in Figure 9) can also be performed with the shielding member 51 in the upper position.

The inert gas piping 93pi that guides the inert gas to the inner nozzle 93 can also be omitted. Alternatively, inert gas ejected from nozzles other than the inner nozzle 93 can be supplied between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W.

The sublimation-containing liquid can also be sprayed from nozzles other than the central nozzle 55. Similarly, the replacement fluid can also be sprayed from nozzles other than the central nozzle 55. The nozzle spraying the sublimation-containing liquid can be a scanning nozzle or a stationary nozzle. The same applies to the nozzle spraying the replacement fluid. The nozzle spraying the sublimation-containing liquid can also be a different type of nozzle than the nozzle spraying the replacement fluid.

When performing the curing film formation step (step S10 in Figure 9), in addition to spraying from the central nozzle 55 and the central opening 61 of the shielding member 51, inert gases such as nitrogen can also be sprayed onto the upper surface of the substrate W from spray outlets other than the central nozzle 55 and the central opening 61 of the shielding member 51. Alternatively, inert gases such as nitrogen can be sprayed onto the upper surface of the substrate W from spray outlets other than the central nozzle 55 and the central opening 61 of the shielding member 51. The same applies when performing the sublimation step (step S11 in Figure 9).

For example, the scanning nozzle can also spray inert gas onto the upper surface of the substrate W. In this case, the impact position where the inert gas sprayed from the scanning nozzle first impacts the upper surface of the substrate W can be fixed at the center of the substrate W, or the impact position can be moved. The center nozzle 55 is one example of a gas nozzle. The central opening 61 of the blocking component 51 is another example of a gas nozzle.

When the suction port 95i is an annular suction port, the third cylindrical flow path 95tc and the second linear flow path 95Lb can be omitted from the internal flow path 95f of the exhaust guide 94. In this case, the lower end (upstream end) of the second cylindrical flow path 95tb is equivalent to the annular suction port.

The suction port 95i can also be a plurality of segmented suction ports arranged in a ring around the central axis CL of the light source cover 92, outside the central opening 92op of the light source cover 92. For example, the third cylindrical flow path 95tc can also be omitted from the exhaust guide 94 (see Figure 7B). In this case, the lower end (upstream end) of the second linear flow path 95Lb is equivalent to the segmented suction port.

The segmented suction port can be circular or an arc extending along the circumference Dc of the light source cover 92. Circular and arc-shaped segmented suction ports can also be included in a plurality of segmented suction ports. In either case, oxidizing gases and organic matter are drawn in by the exhaust guide 94 around the entire or substantially the entire circumference of the light source cover 92.

When the suction port 95i is a plurality of segmented suction ports, the exhaust guide 94 may also lack the exhaust ring 94r, flange 94f, and exhaust pipe 94t, but instead have a plurality of exhaust nozzles spaced apart in the circumferential direction Dc of the light source cover 92. In this case, each exhaust nozzle is provided with one or more segmented suction ports. The suction force of the suction force generating device 95g can be transmitted to all or a plurality of exhaust nozzles, or each exhaust nozzle can be provided with one suction force generating device 95g.

The light source cover 92 can also be the size that overlaps completely with the substrate W when viewed from above. In this case, when removing organic matter from the substrate W, the heater 90 and the like can be moved horizontally relative to the substrate W without causing them to move.

The top wall 92t of the light source cover 92 may also protrude outward from the outer peripheral wall 92o of the light source cover 92. Alternatively, the flange 94f of the exhaust guide 94 may protrude inward from the exhaust ring 94r of the exhaust guide 94. The top wall 92t of the light source cover 92 may also be omitted, as long as the light source cover 92 can be supported by the support arm 96ar. Similarly, the flange 94f of the exhaust guide 94 may also be omitted, as long as the exhaust guide 94 can be supported by the support arm 96ar.

When oxidizing gas is supplied to the substrate W, the substrate W can also be heated from the side opposite to the light source 91 relative to the substrate W held on the rotating chuck 10. For example, a heating fluid with a temperature higher than room temperature can be sprayed onto the lower surface of the substrate W, or the heater can be positioned below the substrate W. In the former case, the heating fluid can be sprayed from the nozzle 71 on the lower surface or from the central opening 81 of the rotating base 12. In the latter case, the heater can be positioned between the upper surface 12u of the rotating base 12 and the lower surface of the substrate W, or the heater can be positioned within the rotating base 12.

Organic matter can also be removed from the lower surface of the substrate W, rather than from the upper surface. Alternatively, organic matter can be removed from both the upper and lower surfaces of the substrate W. When removing organic matter from the lower surface of the substrate W, it is sufficient to place the heater 90 or the like below the substrate W.

Organic matter generated during the supply of a processing liquid other than the liquid containing the sublimation substance can also be removed from the substrate W. Organic matter can also be removed from the substrate W in a chamber different from the chamber where the processing liquid is supplied to the substrate W. In other words, organic matter can also be removed from the substrate W held on a substrate holder different from the substrate holder that holds the substrate W when the processing liquid is supplied to the substrate W.

The substrate processing apparatus 1 is not limited to a device for processing a circular substrate W, but may also be a device for processing a polygonal substrate W.

You may combine two or more of the above components. You may also combine two or more of the above steps.

The embodiments of this invention have been described in detail, but these are merely specific examples used to clarify the technical content of this invention. This invention should not be limited to these specific examples; the spirit and scope of this invention are defined solely by the appended patent applications. [Related Applications]

This application claims priority to Japanese Patent Application 2023-103715, filed on June 23, 2023, the entire contents of which are incorporated herein by reference.

1: Substrate processing device 2: Processing unit 3: Control device 3a: Computer body 3b: CPU 3c: Memory 3d: Peripheral device 3e: Storage unit 3f: Reader 3g: Communication device 4: Chamber 5: Partition wall 5a: Air outlet 5b: Loading/unloading outlet 6: FFU 7: Baffle plate 8: Exhaust pipe 9: Exhaust valve 10: Rotary chuck 11: Chuck pin 12: Rotary base 12u: Upper surface 13: Rotary shaft 14: Rotary motor 21: 22: Processing cup; 23: Outer wall component; 24: Cup; 24u: Enclosure; 25: Upper end; 26: Cylindrical part; 27: Top wall; 31a: Enclosure lifting unit; 31b: First liquid nozzle; 32a: First liquid piping; 32b: Second liquid piping; 33a: First liquid valve; 33b: Second liquid valve; 34a: First nozzle moving unit; 34b: Second nozzle moving unit; 35a: First flushing fluid nozzle; 35b: Second flushing fluid nozzle; 36 a: First flush fluid piping 36 b: Second flush fluid piping 37 a: First flush fluid valve 37 b: Second flush fluid valve 40: Sublimation substance containing liquid piping 41: Sublimation substance containing liquid valve 44: Replacement fluid piping 45: Replacement fluid valve 51: Shutdown component 51 L: Lower surface 52: Circular plate section 53: Support shaft 54: Shutdown component lifting unit 55: Center nozzle 56: Gas piping 57: Gas valve 58: Flow regulating valve 59: Heater 6 1: Central opening; 62: Gas flow path; 63: Gas piping; 64: Gas valve; 65: Flow regulating valve; 66: Heater; 71: Lower surface nozzle; 72: Heating fluid piping; 73: Heating fluid valve; 74: Flow regulating valve; 75: Heater; 81: Central opening; 82: Gas flow path; 83: Gas piping; 84: Gas valve; 85: Flow regulating valve; 86: Heater; 90: Heater; 91: Light source; 91a: Annular section; 91b: End block; 91h: Radiator. 91p: Light-emitting tube; 91r: Reflector; 91s: Linear section; 92: Light source cover; 92b: Bottom wall; 92ci: Inner circumference; 92co: Outer circumference; 92i: Inner peripheral wall; 92o: Outer peripheral wall; 92op: Central opening; 92sL: Lower surface; 92si: Inner peripheral surface; 92so: Outer peripheral surface; 92su: Upper surface; 92t: Top wall; 93: Inner nozzle; 93d: Spray outlet; 93f: Internal flow path; 93fi: Flow regulating valve; 93fo: Flow regulating valve. h: Gas heater; 93pi: Inert gas piping; 93po: Oxidizing gas piping; 93vi: Inert gas valve; 93vo: Oxidizing gas valve; 94: Exhaust guide; 94f: Flange; 94r: Exhaust ring; 94sL: Lower surface; 94si: Inner circumferential surface; 94so: Outer circumferential surface; 94su: Upper surface; 94t: Exhaust pipe; 95La: First linear flow path; 95Lb: Second linear flow path; 95d: Downstream flow path; 95f: Internal flow path; 95g Suction generating device 95i: Suction port 95o: Discharge port 95p: Exhaust piping 95ta: First cylindrical flow path 95tb: Second cylindrical flow path 95tc: Third cylindrical flow path 96: Heater moving unit 96ac: Drive actuator 96ar: Support arm 96bL: Lower bracket 96bs: Support bracket 96bu: Upper bracket 96c: Ring cover 96h: Head 96i: Inner ring 96r: Ring 96s: Shaft 96si: Sealing ring 96so: Sealing ring A1: Rotation axis A2: Rotation axis B1: Bolt B2: Bolt B3: Bolt CA: Carrier CL: Central axis of the light source cover CR: Central robot Da: Axial Dc: Circumferential Dr: Radial Hc: Hand Hi: Hand IR: Transfer robot LP: Load port P: Program P1: Pattern RM: Portable media S1 to 14: Steps SF: Curing film TP: Transfer path TS: Transfer system TW: Tower W: Substrate

Figure 1A is a schematic top view showing the layout of a substrate processing apparatus according to one embodiment of the present invention. Figure 1B is a schematic side view of the substrate processing apparatus. Figure 2 is a schematic view of the interior of the processing unit provided in the substrate processing apparatus from a plane. Figure 3 is a schematic top view of the interior of the processing unit. Figure 4 is a cross-sectional view of the heater, inner nozzle, and exhaust guide along a plane including the central axis of the light source cover. Figure 5 is a schematic bottom view of the heater, inner nozzle, and exhaust guide. Figure 6 is an enlarged view of a portion of Figure 4. Figures 7A-B are cross-sectional views of the exhaust guide. Figure 8 is a block diagram showing the electrical configuration of the substrate processing apparatus. Figure 9 is a step diagram illustrating an example of substrate processing performed by the substrate processing apparatus. Figures 10A to 10E are schematic cross-sectional views of the substrate. Figure 11 is a schematic diagram showing the state in which oxidizing gas is ejected from the inner nozzle while the exhaust guide draws in the oxidizing gas. Figure 12 is a schematic diagram showing the state in which, after oxidizing gas is supplied to the substrate, inert gas is ejected from the inner nozzle while the exhaust guide draws in the inert gas.

3: Control Device 90: Heater 91: Light Source 92: Light Source Cover 92op: Central Opening 92sL: Lower Surface 93: Inner Nozzle 93fo: Flow Adjustment Valve 93h: Gas Heater 93vo: Oxidizing Gas Valve 94: Exhaust Guide 95f: Internal Flow Path 95g: Suction Force Generating Device 95i: Suction Port 95p: Exhaust Piping 96: Heater Moving Unit 96ac: Drive Actuator 96ar: Support Arm 96h: Head CL: Central Axis of the Light Source Cover W: Base Plate

Claims (10)

A substrate processing apparatus comprising: a substrate holder for holding a substrate; a light source cover including a facing surface and a central opening, the facing surface facing the substrate held in the substrate holder, the central opening being formed by the inner periphery of the facing surface surrounding a central axis passing through the center of the substrate; an inner nozzle for spraying an oxidizing gas that oxidizes and vaporizes organic matter onto the substrate held in the substrate holder, thereby forming a radial flow of the oxidizing gas from the central opening between the facing surface and the substrate; a light source for irradiating the substrate held in the substrate holder with light through the facing surface, thereby heating the substrate and the oxidizing gas; and An exhaust guide includes an annular suction port or a plurality of segmented suction ports, through which gas flowing radially along the substrate from the central opening is drawn. The annular suction port surrounds the central axis outside the central opening, and the plurality of segmented suction ports are arranged in annularity to surround the central axis outside the central opening. As in the substrate processing apparatus of claim 1, the light source cover further includes an outer peripheral wall surrounding the light source, and the exhaust guide surrounds the entire circumference of the outer peripheral wall in a manner that does not contact the outer peripheral wall. As in claim 2, the substrate processing apparatus further includes a top wall protruding inward from the outer peripheral wall, and the exhaust guide includes an exhaust ring surrounding the entire circumference of the outer peripheral wall without contacting it, and a flange protruding outward from the exhaust ring; the substrate processing apparatus further includes a support arm supporting the top wall and the flange, at least a portion of the flange is positioned below the upper end of the top wall and above the lower end of the top wall. The substrate processing apparatus of any one of claims 1 to 3, wherein the aforementioned exhaust guide further includes an exhaust port with an opening on the surface of the exhaust guide, and an internal flow path for guiding gas from the aforementioned annular suction port or a plurality of segmented suction ports to the exhaust port, and the aforementioned internal flow path includes: a first cylindrical flow path surrounding the central axis on a cylindrical surface surrounding the central axis; a second cylindrical flow path surrounding the central axis on the cylindrical surface; a plurality of first linear flow paths extending from the aforementioned first cylindrical flow path to the aforementioned second cylindrical flow path; and a plurality of second linear flow paths extending toward the aforementioned annular suction port or the plurality of segmented suction ports, from the aforementioned second cylindrical flow path to the opposite side of the aforementioned plurality of first linear flow paths; The plurality of first linear flow paths and the plurality of second linear flow paths are arranged on the cylindrical surface such that, when viewed along a direction parallel to the central axis, at least one of the plurality of first linear flow paths does not overlap with any of the plurality of second linear flow paths. The substrate processing apparatus of any of claims 1 to 3 further includes a gas heater for heating the oxidizing gas supplied to the internal nozzle. The substrate processing apparatus according to any one of claims 1 to 3 further comprises: an oxidizing gas piping guiding the oxidizing gas ejected from the inner nozzle; an inert gas piping guiding the inert gas ejected from the inner nozzle; an oxidizing gas valve switching between an open state and a closed state, the open state meaning that the oxidizing gas flowing toward the inner nozzle within the oxidizing gas piping passes through, and the closed state meaning that the oxidizing gas flowing toward the inner nozzle within the oxidizing gas piping stops; and An inert gas valve that switches between an open state and a closed state, wherein the open state allows the inert gas flowing toward the inner nozzle within the inert gas piping to pass through, and the closed state stops the flow of the inert gas toward the inner nozzle within the inert gas piping. The substrate processing apparatus of claim 6 further includes a control device that, while drawing gas through the exhaust guide and switching the oxidation gas valve from the open state to the closed state, draws gas through the exhaust guide and switches the inert gas valve from the closed state to the open state. The substrate processing apparatus according to any one of claims 1 to 3 further comprises: a liquid-containing nozzle for spraying a liquid containing a sublimable substance onto the substrate held in the substrate holder; a gas nozzle for spraying gas onto the substrate held in the substrate holder; and a rotary motor for rotating the substrate held in the substrate holder by rotating the substrate holder about a rotation axis, the rotation axis being located at the center of the substrate held in the substrate holder. The substrate processing apparatus of claim 8 further includes a control device that, after removing the cured film from the substrate, causes the inner nozzle to spray the oxidizing gas, wherein the cured film contains the sublimation substance contained in the sublimation substance containing liquid. A substrate processing method includes: An oxidizing gas supply step, wherein an oxidizing gas for oxidizing and vaporizing organic matter is sprayed from an inner nozzle onto a substrate held in a substrate holder, and a radial flow of the oxidizing gas from a central opening is formed between a facing surface and the substrate, the central opening being formed by the inner periphery of the facing surface surrounding a central axis passing through the center of the substrate; A light emission step, wherein the substrate and the oxidizing gas are heated by irradiating the substrate held in the substrate holder with light from a light source through the facing surface while the oxidizing gas is sprayed from the inner nozzle; and The exhaust process involves simultaneously ejecting the oxidizing gas from the inner nozzle and drawing in the oxidizing gas, which is radially flowing along the central opening of the substrate, through an annular suction port or a plurality of segmented suction ports. The exhaust guide, equipped with the annular suction port or the plurality of segmented suction ports, guides the oxidizing gas. The annular suction port surrounds the central axis outside the central opening, and the plurality of segmented suction ports are arranged in a ring around the central axis outside the central opening.