TWI906041B - Aluminum-scandium alloy target material and manufacturing method thereof - Google Patents
Aluminum-scandium alloy target material and manufacturing method thereofInfo
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本發明是關於一種鋁鈧合金靶材及其製造方法,且特別是關於利用兩種不同鈧含量的鋁鈧合金粉體所製得的鋁鈧合金靶材。This invention relates to an aluminum-calcium alloy target and its manufacturing method, and particularly to an aluminum-calcium alloy target made using two aluminum-calcium alloy powders with different calcium contents.
鋁鈧合金靶材目前主要應用於氮化鋁鈧(ScAlN)壓電薄膜的濺鍍製程,藉由在氮化鋁壓電薄膜中添加少量的鈧,可大幅提升壓電薄膜的頻率響應(frequency response)特性。因此,氮化鋁鈧可應用於高頻濾波器、傳感器及微機電(micro electro mechanical system;MEMS)麥克風等5G通訊半導體、車用電子元件及消費性電子產品中。Aluminum-calcium alloy sputtering targets are currently mainly used in the sputtering process of aluminum-calcium nitride (ScAlN) piezoelectric films. By adding a small amount of ctanium to the aluminum-calcium nitride piezoelectric film, the frequency response characteristics of the piezoelectric film can be significantly improved. Therefore, aluminum-calcium nitride can be used in high-frequency filters, sensors, microelectromechanical systems (MEMS) microphones, 5G communication semiconductors, automotive electronic components, and consumer electronics products.
目前已知利用純鋁粉與純鈧粉製作鈧含量高於35.7重量百分比(wt.%)之鋁鈧合金靶材,其中由於純鋁粉的氧含量較高,故所製得的鋁鈧合金靶材之氧含量無法小於1000ppm。Currently, it is known that aluminum-calcium alloy sputtering targets with a calcium content higher than 35.7% by weight (wt.%) can be made using pure aluminum powder and pure calcium powder. However, because pure aluminum powder has a higher oxygen content, the oxygen content of the resulting aluminum-calcium alloy sputtering targets cannot be less than 1000 ppm.
目前已知另一種製造鋁鈧合金靶材的方法,其係利用熔煉鑄造來生產鈧含量高於35.7wt.%之鋁鈧合金靶材。然而,此製程所得之鋁鈧合金靶材具有傳統粗大的樹枝狀鑄造組織,其不利於後續濺鍍製程所形成之薄膜成分均勻性。此外,當鋁鈧合金靶材中的鈧含量大於35.7wt.%時,合金中會產生各種介金屬化合物(包含Al 3Sc、Al 2Sc、AlSc以及AlSc 2)。然而,介金屬化合物會導致合金性質變得硬脆,不利於鍛造或軋延等製程。換言之,無法利用鍛造或軋延等製程來改善靶材的微觀組織,且靶材的硬脆性質不利於靶材後續的加工。 Another known method for manufacturing aluminum-carbide alloy sputtering targets involves using melt casting to produce aluminum-carbide alloy sputtering targets with a carbide content higher than 35.7 wt.%. However, the aluminum-carbide alloy sputtering targets obtained through this process have a traditionally coarse dendritic casting structure, which is detrimental to the uniformity of the film composition formed in subsequent sputtering processes. Furthermore, when the carbide content in the aluminum-carbide alloy sputtering target is greater than 35.7 wt.%, various intermetallic compounds (including Al3Sc , Al2Sc , AlSc, and AlSc2 ) are generated in the alloy. However, these intermetallic compounds cause the alloy to become hard and brittle, which is unfavorable for forging or rolling processes. In other words, it is impossible to improve the microstructure of the target material using processes such as forging or rolling, and the hard and brittle nature of the target material is not conducive to subsequent processing.
由於鋁鈧合金靶材的粗大樹枝狀鑄造組織與氧含量皆會影響壓電薄膜的特性,因此,目前亟需發展出一種鋁鈧合金靶材及其製造方法以克服上述問題。Since the coarse dendritic casting structure and oxygen content of aluminum-gallium alloy targets affect the properties of piezoelectric films, there is an urgent need to develop an aluminum-gallium alloy target and its manufacturing method to overcome the above problems.
本發明的鋁鈧合金靶材之製造方法結合了真空熔煉與粉末冶金兩種製程的優點。詳細來說,本發明利用真空熔煉製程和霧化製程以取得兩種純度高、氧含量低、且均質的鋁鈧合金粉體後,再藉由粉末冶金熱壓製程(即,成型及緻密化步驟),以獲得緻密的鋁鈧合金靶材。The manufacturing method of the aluminum-carbide alloy target of this invention combines the advantages of vacuum melting and powder metallurgy. In detail, this invention utilizes a vacuum melting process and atomization process to obtain two types of high-purity, low-oxygen, and homogeneous aluminum-carbide alloy powders, and then uses a powder metallurgy hot pressing process (i.e., forming and densification steps) to obtain a dense aluminum-carbide alloy target.
藉由上述製造方法所製成的鋁鈧合金靶材之組織細緻均勻、無粗大的樹枝狀鑄造組織、氧含量低,且本發明的鋁鈧合金靶材的結晶相包含金屬鋁,因此,可增加鋁鈧合金靶材之加工性。The aluminum-carbide alloy sputtering material produced by the above manufacturing method has a fine and uniform microstructure, no coarse dendritic casting structure, and low oxygen content. Furthermore, the crystalline phase of the aluminum-carbide alloy sputtering material of the present invention contains metallic aluminum, thus increasing the machinability of the aluminum-carbide alloy sputtering material.
本發明至少一實施例提供一種鋁鈧合金靶材之製造方法,包含以下步驟。提供第一金屬混合物與第二金屬混合物,其中第一金屬混合物包含鋁和鈧,第二金屬混合物包含鋁和鈧,且第一金屬混合物之鈧含量不同於第二金屬混合物之鈧含量。分別對第一金屬混合物與第二金屬混合物進行真空熔煉步驟,以分別形成第一鋁鈧合金塊材與第二鋁鈧合金塊材。分別對第一鋁鈧合金塊材與第二鋁鈧合金塊材進行霧化步驟,以分別形成第一鋁鈧合金粉體與第二鋁鈧合金粉體,其中以第一鋁鈧合金粉體之總重量為100重量百分比計,第一鋁鈧合金粉體之鈧含量大於35.7重量百分比,以第二鋁鈧合金粉體之總重量為100重量百分比計,第二鋁鈧合金粉體之鈧含量小於35.7重量百分比。對第一鋁鈧合金粉體與第二鋁鈧合金粉體進行乾式混粉步驟,以形成鋁鈧合金複合粉體。對鋁鈧合金複合粉體進行成型及緻密化步驟,以形成鋁鈧合金靶材,其中鋁鈧合金靶材的結晶相包含金屬鋁。At least one embodiment of the present invention provides a method for manufacturing an aluminum-calcium alloy target, comprising the following steps: providing a first metal mixture and a second metal mixture, wherein the first metal mixture comprises aluminum and calcium, the second metal mixture comprises aluminum and calcium, and the calcium content of the first metal mixture is different from the calcium content of the second metal mixture; and performing a vacuum melting step on the first metal mixture and the second metal mixture respectively to form a first aluminum-calcium alloy block and a second aluminum-calcium alloy block respectively. The first and second aluminum-calcium alloy blocks are respectively atomized to form first and second aluminum-calcium alloy powders. The first aluminum-calcium alloy powder has a carbide content greater than 35.7% by weight (based on the total weight of the first aluminum-calcium alloy powder as 100% by weight), and the second aluminum-calcium alloy powder has a carbide content less than 35.7% by weight (based on the total weight of the second aluminum-calcium alloy powder as 100% by weight). The first and second aluminum-calcium alloy powders are then dry-mixed to form an aluminum-calcium alloy composite powder. Aluminum-carbide alloy composite powder is formed and densified to form an aluminum-carbide alloy target, wherein the crystalline phase of the aluminum-carbide alloy target contains metallic aluminum.
在本發明至少一實施例中,以第一金屬混合物的總重量為100重量百分比計,第一金屬混合物包含大於35.7重量百分比的鈧,以及餘量的鋁。以第二金屬混合物的總重量為100重量百分比計,第二金屬混合物包含小於35.7重量百分比的鈧,以及餘量的鋁。In at least one embodiment of the present invention, the first metal mixture comprises, by weight percentage (100%), greater than 35.7% carbide and the balance being aluminum. The second metal mixture comprises, by weight percentage (100%), less than 35.7% carbide and the balance being aluminum.
在本發明至少一實施例中,第一金屬混合物與第二金屬混合物分別由一鋁金屬塊與一鈧金屬塊形成,其中此些鋁金屬塊中每一者的純度不小於99.99%,此些鋁金屬塊中每一者的氧含量小於100ppm,此些鈧金屬塊中每一者的純度不小於99.95%,且此些鈧金屬塊中每一者的氧含量小於300ppm。此些真空熔煉步驟中每一者為真空電弧熔煉製程或真空懸浮熔煉製程,且此些真空熔煉步驟中每一者的真空度不大於10 -3Torr。 In at least one embodiment of the present invention, the first metal mixture and the second metal mixture are respectively formed from an aluminum metal block and a cubic metal block, wherein each of the aluminum metal blocks has a purity of not less than 99.99% and an oxygen content of less than 100 ppm, and each of the cubic metal blocks has a purity of not less than 99.95% and an oxygen content of less than 300 ppm. Each of the vacuum melting steps is a vacuum arc melting process or a vacuum suspension melting process, and the vacuum degree of each of the vacuum melting steps is not greater than 10⁻³ Torr.
在本發明至少一實施例中,上述霧化步驟更包含以下步驟。分別對第一鋁鈧合金塊材與第二鋁鈧合金塊材進行加工步驟,以分別形成第一鋁鈧合金電極棒與第二鋁鈧合金電極棒。在真空環境下,分別對第一鋁鈧合金電極棒與第二鋁鈧合金電極棒進行感應加熱步驟,以分別形成第一鋁鈧合金溶液與第二鋁鈧合金溶液,其中此些霧化步驟中每一者之氣體源為氬氣。利用氬氣,分別對第一鋁鈧合金溶液與第二鋁鈧合金溶液進行霧化步驟。In at least one embodiment of the present invention, the atomization step further includes the following steps: Processing the first aluminum-calcium alloy block and the second aluminum-calcium alloy block respectively to form a first aluminum-calcium alloy electrode rod and a second aluminum-calcium alloy electrode rod. Induction heating of the first aluminum-calcium alloy electrode rod and the second aluminum-calcium alloy electrode rod in a vacuum environment to form a first aluminum-calcium alloy solution and a second aluminum-calcium alloy solution respectively, wherein the gas source for each of these atomization steps is argon. Atomization of the first aluminum-calcium alloy solution and the second aluminum-calcium alloy solution is performed using argon.
在本發明至少一實施例中,真空環境的真空度不大於10 -3Torr,氬氣的純度不小於99.999%,且霧化步驟的霧化壓力為20atm至35atm。 In at least one embodiment of the present invention, the vacuum degree of the vacuum environment is not greater than 10⁻³ Torr, the purity of argon is not less than 99.999%, and the atomization pressure of the atomization step is 20 atm to 35 atm.
在本發明至少一實施例中,鋁鈧合金複合粉體之鈧含量滿足下式(I):
在本發明至少一實施例中,以鋁鈧合金複合粉體之總重量為100重量百分比計,鋁鈧合金複合粉體之鈧含量不小於35.7重量百分比。In at least one embodiment of the present invention, the carbide content of the aluminum-carbide alloy composite powder is not less than 35.7% by weight, based on the total weight of the aluminum-carbide alloy composite powder as 100% by weight.
在本發明至少一實施例中,乾式混粉步驟的混合時間為2小時至12小時,其中成型及緻密化步驟為電阻加熱式之熱壓成型製程或直接加熱式之熱壓成型製程。In at least one embodiment of the present invention, the mixing time of the dry mixing step is 2 hours to 12 hours, wherein the molding and densification step is a hot pressing molding process of resistance heating or a hot pressing molding process of direct heating.
在本發明至少一實施例中,成型及緻密化步驟之加熱溫度不大於第一鋁鈧合金粉體與第二鋁鈧合金粉體之固相線溫度,成型及緻密化步驟中的熱壓成型壓力為10MPa至55MPa,且成型及緻密化步驟中的熱壓成型時間為30分鐘至6小時。In at least one embodiment of the present invention, the heating temperature of the molding and densification step is not greater than the solidus temperature of the first aluminum-calcium alloy powder and the second aluminum-calcium alloy powder, the hot pressing pressure in the molding and densification step is 10 MPa to 55 MPa, and the hot pressing time in the molding and densification step is 30 minutes to 6 hours.
本發明至少一實施例提供一種鋁鈧合金靶材,藉由上述之鋁鈧合金靶材之製造方法所製成。鋁鈧合金靶材包含35.7重量百分比至70重量百分比的鈧以及餘量的鋁。鋁鈧合金靶材的純度不小於99.95%,鋁鈧合金靶材的密度不小於99.6%,鋁鈧合金靶材的氧含量小於1000ppm。At least one embodiment of the present invention provides an aluminum-calcium alloy sputtering target, manufactured by the above-described method for manufacturing aluminum-calcium alloy sputtering targets. The aluminum-calcium alloy sputtering target comprises 35.7 to 70% by weight of ctanium and the balance being aluminum. The purity of the aluminum-calcium alloy sputtering target is not less than 99.95%, the density of the aluminum-calcium alloy sputtering target is not less than 99.6%, and the oxygen content of the aluminum-calcium alloy sputtering target is less than 1000 ppm.
以下仔細討論本發明實施例之製造和使用。然而,可以理解的是,實施例提供許多可應用的發明概念,其可實施於各式各樣的特定內容中。所討論之特定實施例僅供說明,並非用以限定本發明之範圍。The manufacture and use of embodiments of the present invention will now be discussed in detail. However, it is understood that the embodiments provide many applicable inventive concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are for illustrative purposes only and are not intended to limit the scope of the present invention.
在本文中,由「一數值至另一數值」表示的範圍,是一種避免在說明書中一一列舉該範圍中的所有數值的概要性表示方式。因此,某一特定數值範圍的記載,涵蓋該數值範圍內的任意數值以及由該數值範圍內的任意數值界定出的較小數值範圍,如同在說明書中明文寫出該任意數值和該較小數值範圍一樣。In this document, the range referred to as "from one value to another" is a summary representation that avoids listing all the values within that range in the specification. Therefore, the description of a particular range of values encompasses any value within that range as well as the smaller range of values defined by that value, just as if the arbitrary value and the smaller range of values were explicitly stated in the specification.
可以理解的是,儘管這裡可以使用「第一」、「第二」等術語來描述各種特徵,但是這些特徵不應受到這些術語的限制。這些術語僅用於將一個特徵與另一個特徵區分開來。例如,在不脫離實施方式的範疇的情況下,第一特徵可以被稱為第二特徵,並且類似地,第二特徵可以被稱為第一特徵。Understandably, while terms such as "first" and "second" may be used to describe various features, these features should not be limited by these terms. These terms are only used to distinguish one feature from another. For example, without departing from the scope of implementation, a first feature can be called a second feature, and similarly, a second feature can be called a first feature.
請參考圖1,其為根據本發明之一些實施例之鋁鈧合金靶材的製造方法100之流程示意圖。如圖1的步驟110所示,提供第一金屬混合物與第二金屬混合物。第一金屬混合物包含鋁和鈧,第二金屬混合物包含鋁和鈧,且第一金屬混合物之鈧含量不同於第二金屬混合物之鈧含量。在步驟110的實施例中,第一金屬混合物與第二金屬混合物分別由一鋁金屬塊與一鈧金屬塊形成。Please refer to Figure 1, which is a schematic flowchart of a method 100 for manufacturing an aluminum-calcium alloy target according to some embodiments of the present invention. As shown in step 110 of Figure 1, a first metal mixture and a second metal mixture are provided. The first metal mixture contains aluminum and calcium, and the second metal mixture contains aluminum and calcium, wherein the calcium content of the first metal mixture is different from the calcium content of the second metal mixture. In an embodiment of step 110, the first metal mixture and the second metal mixture are formed from an aluminum metal block and a calcium metal block, respectively.
可以理解的是,鋁金屬塊與鈧金屬塊的用量係取決於所欲製得之鋁鈧金屬混合物(即,第一金屬混合物與第二金屬混合物)的成分比。在一些實施例中,以第一金屬混合物的總重量為100重量百分比計,第一金屬混合物包含大於35.7重量百分比的鈧,以及餘量的鋁。換言之,第一金屬混合物包含小於64.3重量百分比的鋁。在一些實施例中,以第二金屬混合物的總重量為100重量百分比計,第二金屬混合物包含小於35.7重量百分比的鈧,以及餘量的鋁。換言之,第二金屬混合物包含大於64.3重量百分比的鋁。Understandably, the amounts of aluminum and carbide metal blocks used depend on the desired ratio of the aluminum-carbide metal mixture (i.e., the first metal mixture and the second metal mixture). In some embodiments, the first metal mixture contains more than 35.7% carbide and the balance aluminum, based on 100% of the total weight of the first metal mixture. In other words, the first metal mixture contains less than 64.3% carbide. In some embodiments, the second metal mixture contains less than 35.7% carbide and the balance aluminum, based on 100% of the total weight of the second metal mixture. In other words, the second metal mixture contains more than 64.3% carbide.
在一些實施例中,此些鋁金屬塊中每一者的純度可選擇性地為不小於99.99%,且此些鈧金屬塊中每一者的純度可選擇性地為不小於99.95%,但不限於此。當上述鋁金屬塊與鈧金屬塊的純度為上述範圍時,有利於提升後續獲得的鋁鈧合金靶材的純度。In some embodiments, the purity of each of these aluminum metal blocks may selectively be not less than 99.99%, and the purity of each of these titanium metal blocks may selectively be not less than 99.95%, but is not limited thereto. When the purity of the aforementioned aluminum and titanium metal blocks is within the above range, it is beneficial to improve the purity of the subsequently obtained aluminum-titanium alloy sputtering target.
在一些實施例中,此些鋁金屬塊中每一者的氧含量可選擇性地為小於100ppm,且此些鈧金屬塊中每一者的氧含量可選擇性地為小於300ppm,但不限於此。當上述鋁金屬塊與鈧金屬塊的氧含量為上述範圍時,有利於降低後續獲得的鋁鈧合金靶材的氧含量。In some embodiments, the oxygen content of each of these aluminum metal blocks may selectively be less than 100 ppm, and the oxygen content of each of these carbide metal blocks may selectively be less than 300 ppm, but is not limited thereto. When the oxygen content of the aforementioned aluminum and carbide metal blocks is within the above range, it is advantageous to reduce the oxygen content of the subsequently obtained aluminum-carbide alloy target.
然後,如圖1的步驟120所示,分別對第一金屬混合物與第二金屬混合物進行真空熔煉步驟,以分別形成第一鋁鈧合金塊材與第二鋁鈧合金塊材。在一些實施例中,真空熔煉步驟係利用水冷銅坩堝或在無坩堝下而進行。Then, as shown in step 120 of Figure 1, the first metal mixture and the second metal mixture are subjected to a vacuum melting step to form a first aluminum-carbide alloy ingot and a second aluminum-carbide alloy ingot, respectively. In some embodiments, the vacuum melting step is performed using a water-cooled copper crucible or without a crucible.
在一些實施例中,上述真空熔煉步驟中每一者可為真空電弧熔煉(vacuum arc melting)製程或真空懸浮熔煉(vacuum levitation melting)製程。一般而言,真空電弧熔煉製程係利用水冷銅坩堝進行,故可減少金屬塊與坩堝的反應性。另外,真空懸浮熔煉製程係不需要使用坩堝,故不會有因坩堝與金屬塊反應而產生的雜質。在一些實施例中,上述真空熔煉步驟中每一者的真空度可選擇性地為不大於10 -3Torr,但不限於此。當真空熔煉步驟中的真空度不大於10 -3Torr時,有利於降低後續獲得的鋁鈧合金靶材的氧含量。 In some embodiments, each of the above-described vacuum melting steps can be a vacuum arc melting process or a vacuum levitation melting process. Generally, the vacuum arc melting process is carried out using a water-cooled copper crucible, thus reducing the reactivity between the metal block and the crucible. Conversely, the vacuum levitation melting process does not require the use of a crucible, thus eliminating impurities generated by the reaction between the crucible and the metal block. In some embodiments, the vacuum level in each of the above-described vacuum melting steps can selectively be no greater than 10⁻³ Torr, but is not limited to this. When the vacuum level in the vacuum melting step is no greater than 10⁻³ Torr, it is advantageous to reduce the oxygen content of the subsequently obtained aluminum-calcium alloy target.
在一些實施例中,上述真空環境的真空度可選擇性地為不大於10 -3Torr,但不限於此。當感應加熱步驟中的真空度不大於10 -3Torr時,有利於降低後續獲得的鋁鈧合金靶材的氧含量。 In some embodiments, the vacuum level of the aforementioned vacuum environment may selectively be no more than 10⁻³ Torr, but is not limited thereto. When the vacuum level in the induction heating step is no more than 10⁻³ Torr, it is advantageous to reduce the oxygen content of the subsequently obtained aluminum-copper alloy target.
接著,如圖1的步驟130所示,分別對第一鋁鈧合金塊材與第二鋁鈧合金塊材進行霧化步驟,以分別形成第一鋁鈧合金粉體與第二鋁鈧合金粉體。在步驟130中,分別對第一鋁鈧合金塊材與第二鋁鈧合金塊材進行加工步驟,以分別形成第一鋁鈧合金電極棒與第二鋁鈧合金電極棒。之後,在真空環境下,分別對第一鋁鈧合金電極棒與第二鋁鈧合金電極棒進行感應加熱步驟,以分別形成第一鋁鈧合金溶液與第二鋁鈧合金溶液。在一些實施例中,此些霧化步驟中每一者之氣體源為氬氣。詳細來說,霧化步驟係指,在形成第一鋁鈧合金溶液與第二鋁鈧合金溶液的瞬間,以高純度氬氣分別將第一鋁鈧合金溶液及第二鋁鈧合金溶液霧化成第一鋁鈧合金粉體與第二鋁鈧合金粉體。可以理解的是,由於第一鋁鈧合金粉體與第二鋁鈧合金粉體係由第一金屬混合物與第一金屬混合物製成。因此,以第一鋁鈧合金粉體之總重量為100重量百分比計,第一鋁鈧合金粉體之鈧含量大於35.7重量百分比,以第二鋁鈧合金粉體之總重量為100重量百分比計,第二鋁鈧合金粉體之鈧含量小於35.7重量百分比。Next, as shown in step 130 of Figure 1, the first aluminum-calcium alloy block and the second aluminum-calcium alloy block are respectively subjected to atomization to form first aluminum-calcium alloy powder and second aluminum-calcium alloy powder, respectively. In step 130, the first aluminum-calcium alloy block and the second aluminum-calcium alloy block are respectively processed to form first aluminum-calcium alloy electrode rod and second aluminum-calcium alloy electrode rod, respectively. Subsequently, under a vacuum environment, the first aluminum-calcium alloy electrode rod and the second aluminum-calcium alloy electrode rod are respectively subjected to induction heating to form first aluminum-calcium alloy solution and second aluminum-calcium alloy solution, respectively. In some embodiments, the gas source for each of these atomization steps is argon. Specifically, the atomization step refers to the process of atomizing the first and second aluminum-calcium alloy solutions into first and second aluminum-calcium alloy powders respectively using high-purity argon gas at the instant the first and second aluminum-calcium alloy solutions are formed. It is understood that the first and second aluminum-calcium alloy powders are made from a first metal mixture and a first metal mixture. Therefore, based on the total weight of the first aluminum-calcium alloy powder as 100% by weight, the carbide content of the first aluminum-calcium alloy powder is greater than 35.7% by weight, and based on the total weight of the second aluminum-calcium alloy powder as 100% by weight, the carbide content of the second aluminum-calcium alloy powder is less than 35.7% by weight.
在一些實施例中,氬氣的純度不小於99.999%。在一些實施例中,霧化步驟的霧化壓力(即,氬氣的霧化壓力)可選擇性地為20atm至35atm,例如22atm、25atm、28atm、30atm或32atm,但不限於此。當霧化壓力小於20atm時,無法充分霧化合金溶液,使得部分粉體無法分散均勻而有黏在一起的情形,故不利於形成本發明的鋁鈧合金靶材。當霧化壓力大於35atm時,會過渡霧化,使得粉體顆粒太小且氧含量太高,故不利於形成本發明的鋁鈧合金靶材。換言之,當霧化壓力為上述範圍時,可具有較佳之霧化效果,有利於後續獲得加工性佳且氧含量小於1000ppm的鋁鈧合金靶材。In some embodiments, the purity of argon is not less than 99.999%. In some embodiments, the atomization pressure of the atomization step (i.e., the atomization pressure of argon) can selectively be from 20 atm to 35 atm, for example, 22 atm, 25 atm, 28 atm, 30 atm, or 32 atm, but is not limited thereto. When the atomization pressure is less than 20 atm, the alloy solution cannot be sufficiently atomized, resulting in some powder particles not being evenly dispersed and sticking together, which is not conducive to the formation of the aluminum-carbide alloy target of the present invention. When the atomization pressure is greater than 35 atm, over-atomization occurs, resulting in powder particles that are too small and have too high an oxygen content, which is also not conducive to the formation of the aluminum-carbide alloy target of the present invention. In other words, when the atomization pressure is within the above range, a better atomization effect can be achieved, which is beneficial for obtaining aluminum-calcium alloy sputtering materials with good processability and an oxygen content of less than 1000 ppm.
可以理解的是,本案的第一鋁鈧合金粉體與第二鋁鈧合金粉體皆為預合金粉(pre-alloyed powder)。由於預合金粉在製造過程中已經達到合金化的狀態,因此每個粉末顆粒內部都包含預先設定的合金成分。相較於傳統利用純鋁粉與純鈧粉製作的鋁鈧合金靶材,本案的鋁鈧合金靶材因為利用兩種不同鈧含量的預合金粉(即,鈧含量大於35.7重量百分比之第一鋁鈧合金粉體以及鈧含量小於35.7重量百分比之第二鋁鈧合金粉體),所以不會有傳統方法中純鋁粉之氧含量較高的問題,因此本發明所製得的鋁鈧合金靶材氧含量小於1000ppm。It is understandable that both the first aluminum-calcium alloy powder and the second aluminum-calcium alloy powder in this case are pre-alloyed powders. Since the pre-alloyed powder has already reached an alloyed state during the manufacturing process, each powder particle contains a pre-defined alloy composition. Compared to traditional aluminum-calcium alloy targets made from pure aluminum powder and pure carbide powder, the aluminum-calcium alloy target of this invention utilizes two pre-alloyed powders with different carbide contents (i.e., a first aluminum-calcium alloy powder with a carbide content greater than 35.7% by weight and a second aluminum-calcium alloy powder with a carbide content less than 35.7% by weight). Therefore, it does not have the problem of higher oxygen content in pure aluminum powder as in traditional methods. As a result, the aluminum-calcium alloy target produced by this invention has an oxygen content of less than 1000 ppm.
之後,如圖1的步驟140所示,對第一鋁鈧合金粉體與第二鋁鈧合金粉體進行乾式混粉步驟,以形成鋁鈧合金複合粉體。在一些實施例中,乾式混粉步驟係在大氣環境或氮氣環境下進行。Then, as shown in step 140 of Figure 1, a dry mixing step is performed on the first aluminum-calcium alloy powder and the second aluminum-calcium alloy powder to form an aluminum-calcium alloy composite powder. In some embodiments, the dry mixing step is performed in an atmospheric environment or a nitrogen environment.
在進行乾式混粉步驟時,根據後續所欲製得鋁鈧合金靶材之鈧含量而選擇並調整某一特定鈧含量之第一鋁鈧合金粉體及其重量與另一特定鈧含量之第二鋁鈧合金粉體及其重量。鋁鈧合金複合粉體之鈧含量滿足下式(I):
在一些實施例中,以鋁鈧合金複合粉體之總重量為100重量百分比計,鋁鈧合金複合粉體之鈧含量不小於35.7重量百分比,例如35.7重量百分比至70重量百分比或是42重量百分比至55重量百分比。In some embodiments, the carbide content of the aluminum-carbide alloy composite powder is not less than 35.7% by weight, for example, 35.7% to 70% by weight or 42% to 55% by weight, based on 100% by weight of the total weight of the aluminum-carbide alloy composite powder.
在一些實施例中,乾式混粉步驟的混合時間可選擇性地為2小時至12小時,但不限於此。當混合時間小於2小時,第一鋁鈧合金粉體與第二鋁鈧合金粉體可能混合不均勻。當混合時間大於12小時,不符合製程成本。因此,當混合時間為上述範圍時,有利於形成本案的鋁鈧合金靶材。In some embodiments, the mixing time of the dry mixing step can be selectively between 2 hours and 12 hours, but is not limited to this. When the mixing time is less than 2 hours, the first aluminum-calcium alloy powder and the second aluminum-calcium alloy powder may not be mixed uniformly. When the mixing time is greater than 12 hours, it is not cost-effective. Therefore, when the mixing time is within the above range, it is advantageous to form the aluminum-calcium alloy target of this invention.
然後,如圖1的步驟150所示,對鋁鈧合金複合粉體進行成型及緻密化步驟,以形成鋁鈧合金靶材。在一些實施例中,成型及緻密化步驟為電阻加熱式之熱壓成型製程或直接加熱式之熱壓成型製程。Then, as shown in step 150 of Figure 1, the aluminum-carbide alloy composite powder is subjected to molding and densification steps to form an aluminum-carbide alloy target. In some embodiments, the molding and densification steps are resistance heating hot pressing processes or direct heating hot pressing processes.
在一些實施例中,成型及緻密化步驟(即,電阻加熱式之熱壓成型製程或直接加熱式之熱壓成型製程)之加熱溫度不大於第一鋁鈧合金粉體與第二鋁鈧合金粉體之固相線溫度。在一些實施例中,假設第一鋁鈧合金粉體的固相線溫度為T1,第二鋁鈧合金粉體的固相線溫度為T2,其中T1>T2,取較低溫的固相線溫度(即,T2)的70%以上當作成型及緻密化步驟中的加熱溫度。若加熱溫度低於低溫的固相線溫度(即,T2)的70%,形成的鋁鈧合金靶材之緻密性不佳,不利於形成本發明的鋁鈧合金靶材。In some embodiments, the heating temperature of the forming and densification step (i.e., resistance heating hot pressing or direct heating hot pressing) is not greater than the solidus temperatures of the first and second aluminum-calcium alloy powders. In some embodiments, it is assumed that the solidus temperature of the first aluminum-calcium alloy powder is T1 and the solidus temperature of the second aluminum-calcium alloy powder is T2, where T1 > T2. The heating temperature in the forming and densification step is taken as more than 70% of the lower solidus temperature (i.e., T2). If the heating temperature is lower than 70% of the lower solidus temperature (i.e., T2), the density of the formed aluminum-calcium alloy target is poor, which is detrimental to the formation of the aluminum-calcium alloy target of this invention.
在一些實施例中,成型及緻密化步驟中的熱壓成型壓力可選擇性地為10MPa至55MPa,例如20MPa、30MPa、40MPa或50MPa,但不限於此。當熱壓成型壓力小於10MPa時,形成的鋁鈧合金靶材之緻密性不佳,不利於形成本發明的鋁鈧合金靶材。受限於模具壓力,所以熱壓成型壓力至多55MPa,且當熱壓成型壓力大於55MPa時,對於形成的鋁鈧合金靶材沒有特別益處。In some embodiments, the hot pressing pressure in the forming and densification steps can selectively be from 10 MPa to 55 MPa, such as 20 MPa, 30 MPa, 40 MPa, or 50 MPa, but is not limited thereto. When the hot pressing pressure is less than 10 MPa, the densification of the formed aluminum-gallium alloy sputtering material is poor, which is not conducive to the formation of the aluminum-gallium alloy sputtering material of the present invention. Due to the limitation of the mold pressure, the hot pressing pressure is at most 55 MPa, and when the hot pressing pressure is greater than 55 MPa, there is no particular benefit to the formed aluminum-gallium alloy sputtering material.
在一些實施例中,成型及緻密化步驟中的熱壓成型時間可選擇性地為30分鐘至6小時,例如1小時、2小時、3小時、4小時或5小時。當熱壓成型時間小於30分鐘時,擴散時間不足,不利於形成本發明的鋁鈧合金靶材。當熱壓成型時間大於6小時,後續獲得的鋁鈧合金靶材之晶粒粗大,且不符合製程成本。In some embodiments, the hot pressing time in the forming and densification steps can be selectively set from 30 minutes to 6 hours, for example, 1 hour, 2 hours, 3 hours, 4 hours, or 5 hours. When the hot pressing time is less than 30 minutes, the diffusion time is insufficient, which is not conducive to the formation of the aluminum-calcium alloy sputtering material of this invention. When the hot pressing time is greater than 6 hours, the resulting aluminum-calcium alloy sputtering material has coarse grains, which is not in line with the process cost.
在一些實施例中,成型及緻密化步驟係利用特定形狀之模具以製得具有特定形狀之鋁鈧合金靶材,故可省略去除頭尾料及邊料的步驟。因此,相較於傳統的鑄造製程,利用本發明之方法製得的鋁鈧合金靶材之成品率較高(例如,高於95%)。In some embodiments, the forming and densification steps utilize molds of specific shapes to produce aluminum-gallium alloy sputtering targets with specific shapes, thus eliminating the need for removing head, tail, and edge materials. Therefore, compared to traditional casting processes, the yield of aluminum-gallium alloy sputtering targets produced using the method of this invention is higher (e.g., higher than 95%).
本發明提供一種鋁鈧合金靶材,藉由上述之鋁鈧合金靶材之製造方法100所製成。在一些實施例中,鋁鈧合金靶材包含35.7重量百分比至70重量百分比的鈧以及餘量的鋁。在一些實施例中,鋁鈧合金靶材的鈧含量例如為42重量百分比至55重量百分比。在一些實施例中,鋁鈧合金靶材的純度不小於99.95%,鋁鈧合金靶材的密度不小於99.6%,鋁鈧合金靶材的氧含量小於1000ppm。This invention provides an aluminum-calcium alloy sputtering target, manufactured by the aforementioned method 100. In some embodiments, the aluminum-calcium alloy sputtering target comprises 35.7% to 70% by weight of ctanium and the balance being aluminum. In some embodiments, the ctanium content of the aluminum-calcium alloy sputtering target is, for example, 42% to 55% by weight. In some embodiments, the purity of the aluminum-calcium alloy sputtering target is not less than 99.95%, the density of the aluminum-calcium alloy sputtering target is not less than 99.6%, and the oxygen content of the aluminum-calcium alloy sputtering target is less than 1000 ppm.
在一些實施例中,鋁鈧合金靶材的結晶相包含金屬鋁。在一具體例中,鋁鈧合金靶材的結晶相包含金屬鋁、Al 3Sc、Al 2Sc以及AlSc。在另一具體例中,鋁鈧合金靶材的結晶相包含金屬鋁、Al 3Sc、Al 2Sc、AlSc以及AlSc 2。值得注意的是,由於本發明的鋁鈧合金靶材的結晶相包含金屬鋁,所以可以改善傳統靶材因介金屬化合物(包含Al 3Sc、Al 2Sc、AlSc以及AlSc 2)而變得硬脆之問題,故本發明的鋁鈧合金靶材有利預後續加工。 In some embodiments, the crystalline phase of the aluminum-calcium alloy sputtering target comprises metallic aluminum. In one specific embodiment, the crystalline phase of the aluminum-calcium alloy sputtering target comprises metallic aluminum, Al3Sc , Al2Sc , and AlSc. In another specific embodiment, the crystalline phase of the aluminum-calcium alloy sputtering target comprises metallic aluminum, Al3Sc , Al2Sc , AlSc, and AlSc2 . It is worth noting that, since the crystalline phase of the aluminum-calcium alloy sputtering target of the present invention comprises metallic aluminum, the problem of conventional targets becoming hard and brittle due to intermetallic compounds (including Al3Sc , Al2Sc , AlSc, and AlSc2 ) can be improved, thus the aluminum-calcium alloy sputtering target of the present invention is advantageous for subsequent processing.
須說明的是,鈧含量大於35.7重量百分比的第一鋁鈧合金粉體為鋁鈧合金靶材提供脆性,而鈧含量小於35.7重量百分比的第二鋁鈧合金粉體為鋁鈧合金靶材提供韌性,因此,製得的鋁鈧合金靶材具有一定的韌性,而不會過於硬脆的問題,故有利預後續加工。It should be noted that the first aluminum-calcium alloy powder with a carbide content greater than 35.7% by weight provides brittleness to the aluminum-calcium alloy sputtering material, while the second aluminum-calcium alloy powder with a carbide content less than 35.7% by weight provides toughness. Therefore, the resulting aluminum-calcium alloy sputtering material has a certain degree of toughness and is not too hard and brittle, which is beneficial for subsequent processing.
根據上述,本發明鋁鈧合金靶材之製造方法利用兩種純度高、氧含量低、且均質的鋁鈧合金粉體(即,第一鋁鈧合金粉體與第二鋁鈧合金粉體),並藉由上式(I)選擇並調整鋁鈧合金粉體鈧含量及其重量,以獲得鈧含量不小於35.7重量百分比的鋁鈧合金複合粉體。然後,再進行成型及緻密化步驟,以形成鈧含量為35.7重量百分比至70重量百分比之鋁鈧合金靶材。本發明的鋁鈧合金靶材具有純度高、密度高、氧含量低及加工性佳等優點。本發明的鋁鈧合金靶材可應用於通訊產業的ScAlN壓電薄膜的濺鍍製程,但不限於此。Based on the above, the manufacturing method of the aluminum-calcium alloy target of the present invention utilizes two types of high-purity, low-oxygen, and homogeneous aluminum-calcium alloy powders (i.e., a first aluminum-calcium alloy powder and a second aluminum-calcium alloy powder). The carbide content and weight of the aluminum-calcium alloy powders are selected and adjusted using the above formula (I) to obtain an aluminum-calcium alloy composite powder with a carbide content of not less than 35.7% by weight. Then, molding and densification steps are performed to form an aluminum-calcium alloy target with a carbide content of 35.7% to 70% by weight. The aluminum-calcium alloy target of the present invention has advantages such as high purity, high density, low oxygen content, and good processability. The aluminum-carbide sputtering target of this invention can be used in the sputtering process of ScAlN piezoelectric thin films in the communications industry, but is not limited thereto.
以下利用實驗例和比較例以說明本發明之應用,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。The following experimental and comparative examples illustrate the application of the invention, but they are not intended to limit the invention. Anyone skilled in this art may make various modifications and refinements without departing from the spirit and scope of the invention.
實驗例1Experimental Example 1
實施例1係以58wt.%鋁-42wt.%鈧合金靶材為製作標的。首先,提供第一金屬混合物與第二金屬混合物。第一金屬混合物包含25wt.%之鋁金屬與75wt.%之鈧金屬,且第二金屬混合物包含95wt.%之鋁金屬與5wt.%之鈧金屬。鋁金屬塊的純度大於99.999%,且氧含量小於20ppm。鈧金屬塊的純度大於99.95%,且氧含量小於300ppm。Example 1 uses a 58wt.% aluminum-42wt.% carbide alloy target as the manufacturing target. First, a first metal mixture and a second metal mixture are provided. The first metal mixture contains 25wt.% aluminum and 75wt.% carbide, and the second metal mixture contains 95wt.% aluminum and 5wt.% carbide. The aluminum ingot has a purity greater than 99.999% and an oxygen content less than 20ppm. The carbide ingot has a purity greater than 99.95% and an oxygen content less than 300ppm.
接著,分別對第一金屬混合物與第二金屬混合物進行真空電弧熔煉製程,以分別形成第一鋁鈧合金塊材與第二鋁鈧合金塊材,其中真空電弧熔煉製程的真空度不大於10 -3Torr。 Next, the first metal mixture and the second metal mixture are subjected to vacuum arc melting processes to form a first aluminum-calcium alloy block and a second aluminum-calcium alloy block, respectively, wherein the vacuum degree of the vacuum arc melting process is not greater than 10⁻³ Torr.
然後,進行霧化步驟,其中分別對第一鋁鈧合金塊材與第二鋁鈧合金塊材進行加工步驟,以分別形成第一鋁鈧合金電極棒與第二鋁鈧合金電極棒。之後,將第一鋁鈧合金電極棒與第二鋁鈧合金電極棒分別置於真空感應加熱爐的感應線圈中,以分別進行感應加熱步驟,並分別形成第一鋁鈧合金溶液與第二鋁鈧合金溶液,其中感應加熱步驟中的真空度為小於或等於10 -3Torr。再將第一鋁鈧合金溶液與第二鋁鈧合金溶液分別導入霧化室。當第一鋁鈧合金溶液與第二鋁鈧合金溶液分別進入霧化室的瞬間,以35atm(霧化壓力)的高壓氬氣噴擊,使熔融的第一鋁鈧合金溶液與第二鋁鈧合金溶液分別霧化成第一鋁鈧合金粉體與第二鋁鈧合金粉體,其中高壓氬氣的純度大於99.999%。 Then, a misting step is performed, in which the first and second aluminum-calcium alloy blocks are processed to form first and second aluminum-calcium alloy electrode rods, respectively. Next, the first and second aluminum-calcium alloy electrode rods are placed in the induction coil of a vacuum induction heating furnace to perform induction heating, forming first and second aluminum-calcium alloy solutions, respectively. The vacuum level during the induction heating step is less than or equal to 10⁻³ Torr. Finally, the first and second aluminum-calcium alloy solutions are introduced into the misting chamber, respectively. At the instant the first aluminum-calcium alloy solution and the second aluminum-calcium alloy solution enter the atomization chamber, they are respectively atomized into first aluminum-calcium alloy powder and second aluminum-calcium alloy powder by high-pressure argon gas at 35 atm (atomization pressure). The purity of the high-pressure argon gas is greater than 99.999%.
之後,對第一鋁鈧合金粉體與第二鋁鈧合金粉體進行乾式混粉步驟。藉由上式(I)計算,取52.9wt.%之第一鋁鈧合金粉體(包含75wt.%之鈧金屬及餘量的鋁金屬)與47.1wt.%之第二鋁鈧合金粉體(包含5wt.%之鈧金屬及餘量的鋁金屬),經混合8小時後,即可製得實驗例1之鋁鈧合金複合粉體,其組成分為58wt.%鋁-42wt.%鈧。式(I)中的各參數請參下表1。Subsequently, the first aluminum-calcium alloy powder and the second aluminum-calcium alloy powder were subjected to a dry mixing process. Using the formula (I) above, 52.9 wt.% of the first aluminum-calcium alloy powder (containing 75 wt.% of carbide and the remainder of aluminum) and 47.1 wt.% of the second aluminum-calcium alloy powder (containing 5 wt.% of carbide and the remainder of aluminum) were mixed for 8 hours to obtain the aluminum-calcium alloy composite powder of Experimental Example 1, with a composition of 58 wt.% aluminum and 42 wt.% carbide. The parameters in formula (I) are shown in Table 1 below.
然後,對鋁鈧合金複合粉體進行成型及緻密化步驟,將58wt.%鋁-42wt.%之鋁鈧合金複合粉體放入石墨模具中,並以直接加熱式之熱壓成形製程對此複合粉體施加電流,其中藉由電流通過複合粉體所產生之電阻熱對其加熱,以使複合粉體之溫度為820°C並持溫45分鐘。同時,對複合粉體施加15MPa之熱壓成型壓力,即可製得實施例1之鋁鈧合金靶材,其組成為58wt.%鋁-42wt.%鈧。實施例1的鋁鈧合金靶材的相對密度為99.8%,純度為99.97%,且氧含量為360ppm。實施例1的鋁鈧合金靶材的結晶相有金屬鋁、Al 3Sc、Al 2Sc、AlSc以及AlSc 2。實施例1的鋁鈧合金靶材之特性如下表2所示。 Then, the aluminum-carbide alloy composite powder is formed and densified. 58 wt.% aluminum-42 wt.% aluminum-carbide alloy composite powder is placed in a graphite mold, and a direct-heating hot-press forming process is used to apply current to the composite powder. The powder is heated by the resistance heat generated by the current flowing through it, raising the temperature to 820°C and holding it at that temperature for 45 minutes. Simultaneously, a hot-press forming pressure of 15 MPa is applied to the composite powder to obtain the aluminum-carbide alloy target of Example 1, which has a composition of 58 wt.% aluminum-42 wt.% carbide. The aluminum-carbide alloy target of Example 1 has a relative density of 99.8%, a purity of 99.97%, and an oxygen content of 360 ppm. The crystalline phases of the aluminum-carbide alloy sputtering target of Example 1 include metallic aluminum, Al3Sc , Al2Sc , AlSc, and AlSc2 . The characteristics of the aluminum-carbide alloy sputtering target of Example 1 are shown in Table 2 below.
表1
表2
實驗例2Experimental Example 2
實驗例2係使用與實驗例1相似的方式進行。不同的是,實驗例2係以45wt.%鋁-55wt.%鈧合金靶材為製作標的。以下說明實驗例1與實驗例2不同處,相同處不再重複贅述。Experiment 2 was conducted in a similar manner to Experiment 1. The difference is that Experiment 2 used a 45wt.% aluminum-55wt.% carbide alloy target. The differences between Experiment 1 and Experiment 2 will be explained below, and the similarities will not be repeated.
實驗例2的第一金屬混合物包含40wt.%之鋁金屬與60wt.%之鈧金屬,且第二金屬混合物包含90wt.%之鋁金屬與10wt.%之鈧金屬。鋁金屬塊的純度大於99.99%,且氧含量小於100ppm。鈧金屬塊的純度大於99.95%,且氧含量小於300ppm。實驗例2的真空熔煉步驟係採用行真空懸浮熔煉製程。實驗例2的霧化步驟係採用25atm(霧化壓力)的高壓氬氣噴擊第一鋁鈧合金溶液與第二鋁鈧合金溶液。In Experiment 2, the first metal mixture contained 40 wt.% aluminum and 60 wt.% carbide, and the second metal mixture contained 90 wt.% aluminum and 10 wt.% carbide. The aluminum ingots had a purity greater than 99.99% and an oxygen content less than 100 ppm. The carbide ingots had a purity greater than 99.95% and an oxygen content less than 300 ppm. The vacuum melting step in Experiment 2 employed a vacuum suspension melting process. The atomization step in Experiment 2 involved spraying the first and second aluminum-carbide alloy solutions with high-pressure argon gas at 25 atm (atomization pressure).
在實驗例2中,藉由上式(I)計算,取90wt.%之第一鋁鈧合金粉體(包含60wt.%之鈧金屬及餘量的鋁金屬)與10wt.%之第二鋁鈧合金粉體(包含10wt.%之鈧金屬及餘量的鋁金屬),經混合4小時後,即可製得實驗例2之鋁鈧合金複合粉體,其組成分為45wt.%鋁-55wt.%鈧。實驗例2之式(I)中的各參數如上表1所示。In Experimental Example 2, by calculating using the above formula (I), 90 wt.% of the first aluminum-calcium alloy powder (containing 60 wt.% of carbide and the remainder of aluminum) and 10 wt.% of the second aluminum-calcium alloy powder (containing 10 wt.% of carbide and the remainder of aluminum) were mixed for 4 hours to obtain the aluminum-calcium alloy composite powder of Experimental Example 2, with a composition of 45 wt.% aluminum and 55 wt.% carbide. The parameters in formula (I) of Experimental Example 2 are shown in Table 1 above.
實驗例2的成型及緻密化步驟中,使複合粉體之溫度為1000°C並持溫4小時。同時,對複合粉體施加50MPa之熱壓成型壓力,即可製得實施例2之鋁鈧合金靶材,其組成為45wt.%鋁-55wt.%鈧。實施例2的鋁鈧合金靶材的相對密度為99.6%,純度為99.95%,且氧含量為430ppm。實施例2的鋁鈧合金靶材的結晶相有金屬鋁、Al 3Sc、Al 2Sc以及AlSc。實施例2的鋁鈧合金靶材之特性如上表2所示。 In the molding and densification steps of Example 2, the temperature of the composite powder was set to 1000°C and held for 4 hours. Simultaneously, a hot pressing pressure of 50 MPa was applied to the composite powder to obtain the aluminum-carbide alloy sputtering target of Example 2, with a composition of 45 wt.% aluminum and 55 wt.% carbide. The aluminum-carbide alloy sputtering target of Example 2 has a relative density of 99.6%, a purity of 99.95%, and an oxygen content of 430 ppm. The crystalline phases of the aluminum-carbide alloy sputtering target of Example 2 include metallic aluminum, Al3Sc , Al2Sc , and AlSc. The characteristics of the aluminum-carbide alloy sputtering target of Example 2 are shown in Table 2 above.
可理解的是,本發明雖以特定組成、特定製造方法及特定評價方式作為例示,說明本發明的鋁鈧合金靶材及其製造方法,惟本發明所屬技術領域中任何具有通常知識者可知,本發明並不限於此,在不脫離本發明之精神和範圍內,本發明亦可使用其他組成、其他製造方法或其他評價方式進行。It is understood that although the present invention uses specific composition, specific manufacturing method and specific evaluation method as examples to illustrate the aluminum-calcium alloy target material and its manufacturing method, it is clear to anyone with ordinary knowledge in the art to which the present invention pertains that the present invention is not limited thereto. Other compositions, other manufacturing methods or other evaluation methods may also be used without departing from the spirit and scope of the present invention.
請參考圖2,其為根據本發明之實驗例2之鋁鈧合金靶材之掃描式電子顯微鏡圖200。從圖2可看出,鋁鈧合金靶材的組織分布均勻,且沒有粗大的樹枝狀鑄造組織。Please refer to Figure 2, which is a scanning electron microscope image 200 of the aluminum-carbide alloy target material according to Experimental Example 2 of the present invention. As can be seen from Figure 2, the microstructure of the aluminum-carbide alloy target material is uniformly distributed and there is no coarse dendritic casting structure.
本發明提供的鋁鈧合金靶材之製造方法結合了粉末冶金製程及真空熔煉製程的優點,可製備出鈧含量大於35.7wt.%且氧含量小於1000ppm之鋁鈧合金靶材。所製得的靶材之組織細緻、均勻、無粗大樹枝狀鑄造組織,且具有金屬鋁之結晶相,因此有利於後續加工。The method for manufacturing aluminum-calcium alloy sputtering targets provided by this invention combines the advantages of powder metallurgy and vacuum melting processes, and can produce aluminum-calcium alloy sputtering targets with a carbide content greater than 35.7 wt.% and an oxygen content less than 1000 ppm. The resulting sputtering targets have a fine and uniform microstructure, without coarse dendritic casting structures, and possess a crystalline phase of metallic aluminum, thus facilitating subsequent processing.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,在本發明所屬技術領域中任何具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed above by way of implementation, it is not intended to limit the present invention. Anyone with ordinary knowledge in the art to which the present invention pertains may make various modifications and alterations without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended patent application.
100:方法 110, 120, 130, 140, 150:步驟 200:掃描式電子顯微鏡圖 100: Method 110, 120, 130, 140, 150: Steps 200: Scanning electron microscope images
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之詳細說明如下。 圖1為根據本發明之一些實施例之鋁鈧合金靶材的製造方法之流程示意圖。 圖2為根據本發明之實驗例2之鋁鈧合金靶材之掃描式電子顯微鏡圖。 To make the above and other objects, features, advantages, and embodiments of the present invention more apparent, detailed descriptions of the accompanying drawings are provided below. Figure 1 is a schematic flowchart of a method for manufacturing an aluminum-calcium alloy target according to some embodiments of the present invention. Figure 2 is a scanning electron microscope image of the aluminum-calcium alloy target according to Experimental Example 2 of the present invention.
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100:方法 100: Method
110,120,130,140,150:步驟 110, 120, 130, 140, 150: Steps
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