TWI903945B - Laser package structure - Google Patents
Laser package structureInfo
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- TWI903945B TWI903945B TW113150679A TW113150679A TWI903945B TW I903945 B TWI903945 B TW I903945B TW 113150679 A TW113150679 A TW 113150679A TW 113150679 A TW113150679 A TW 113150679A TW I903945 B TWI903945 B TW I903945B
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Abstract
Description
本發明是關於一種雷射封裝結構,特別是關於一種垂直共振腔面射型雷射(Vertical Cavity Surface Emitting Laser,VCSEL)元件封裝結構。 This invention relates to a laser packaging structure, and more particularly to a packaging structure for a vertical cavity surface-emitting laser (VCSEL) element.
參閱第1圖,習知雷射晶片110,例如垂直共振腔面射型雷射(Vertical Cavity Surface Emitting Laser,VCSEL)元件,在封裝時係先將雷射晶片110固晶於陶瓷基板100上、進行打線形成線路120後,於雷射晶片110周圍設置間隔件(Spacer)130供形成區隔空間140,此區隔空間140係作空氣層(Air Layer)用。接著覆以光學元件150而完成單顆晶片的封裝製程,形成雷射晶片封裝結構10,供後續連接於外部電路板,其中,光學元件150包含微型透鏡陣列(Micro Lens Array,MLA)或繞射光學元件(Diffraction Optical Element,DOE),可將雷射晶片110射出的光束轉換成均勻的面光源、陣列點光源或者不規則散佈的點光源。 Referring to Figure 1, the familiar laser chip 110, such as a vertical cavity surface-emitting laser (VCSEL) device, is first die-bonded onto a ceramic substrate 100 during packaging. After wire bonding to form wires 120, spacers 130 are provided around the laser chip 110 to form a partition space 140, which serves as an air layer. Next, the single-chip packaging process is completed by covering it with optical element 150, forming a laser chip package structure 10 for subsequent connection to an external circuit board. The optical element 150 includes a microlens array (MLA) or a diffraction optical element (DOE), which can convert the light beam emitted from the laser chip 110 into a uniform surface light source, an array of point light sources, or irregularly distributed point light sources.
參閱第2圖,為進一步考量雷射晶片在模組應用上之保護機制(Eye-Safety),在雷射晶片封裝結構20內設置光電二極體(Photodiode)220,利用打線方式於封裝結構20內形成分別連接雷射晶片110和光電二極體220之線路210、215,當雷射晶片110射出一雷射光通過上方光學元件150時, 雷射光會被轉換成均勻的面光源、陣列點光源或者散佈的點光源並打在外部的物體上時會被反射成回射光,可利用光電二極體220吸收此回射光用以監控光學元件150的功能。當光學元件150破損或劣化時,此回射光的角度與原先不同導致光電二極體220無法接收回射光,藉此判知光學元件150已損壞進而停止雷射晶片110繼續運作。 Referring to Figure 2, to further consider the eye-safety mechanism of the laser chip in module applications, a photodiode 220 is provided within the laser chip package structure 20. Wire bonding is used to form lines 210 and 215 within the package structure 20, respectively connecting the laser chip 110 and the photodiode 220. When the laser chip 110 emits laser light that passes through the upper optical element 150, the laser light is converted into a uniform surface light source, an array of point light sources, or a scattered point light source. When this light hits an external object, it is reflected back as reflected light. The photodiode 220 can absorb this reflected light to monitor the function of the optical element 150. When the optical element 150 is damaged or deteriorated, the angle of the reflected light changes, causing the photodiode 220 to be unable to receive the reflected light. This indicates that the optical element 150 is damaged, thus stopping the laser chip 110 from continuing to operate.
本發明提供一種雷射封裝結構,係以晶圓級封裝(Wafer Level Package;WLP)製程製得晶片級封裝結構(Chip Scale Package,CSP),可提高雷射晶片之封裝產出,並可減小其封裝結構尺寸。 This invention provides a laser packaging structure, which is a chip-scale package (CSP) fabricated using a wafer-level package (WLP) process. This improves the packaging yield of laser chips and reduces their package structure size.
本發明提供一種雷射封裝結構,係利用可電性導通之支架的設置,提供雷射晶片在模組應用上的新穎保護機制,從而減小模組的體積,並大幅降低外部線路斷線而導致模組失效的風險,同時亦可節省其製造成本。 This invention provides a laser packaging structure that utilizes an electrically conductive support to offer a novel protection mechanism for laser chips in module applications. This reduces module size and significantly lowers the risk of module failure due to external circuit breakage, while also saving manufacturing costs.
根據本發明,係提出一種雷射封裝結構,包括:一基板,一雷射晶片,係設於基板之一第一表面上;一支架,設於第一表面上且圍繞雷射晶片,支架之一高度係大於雷射晶片之一厚度,支架包括垂直貫穿其間之一電性導通結構;以及一光學元件,係設於支架上,其中光學元件係藉由電性導通結構而電性連接於基板。 According to the present invention, a laser packaging structure is provided, comprising: a substrate; a laser chip disposed on a first surface of the substrate; a support disposed on the first surface and surrounding the laser chip, wherein the height of the support is greater than the thickness of the laser chip, and the support includes an electrically conductive structure perpendicularly penetrating therethrough; and an optical element disposed on the support, wherein the optical element is electrically connected to the substrate via the electrically conductive structure.
根據本發明,係提出一種雷射封裝結構,包括:一雷射晶片,雷射晶片包括位於其第一表面上的一第一導電結構和一第二導電結構;一膠層,係至少圍繞雷射晶片的四個側面;一間隔件,係相應地設於膠層上且圍繞雷射晶片;以及一光學元件,係朝向雷射晶片的一第二表面而設於間隔件上, 第二表面與第一表面相對;其中雷射晶片係藉由第一導電結構與第二導電結構電性連接於一外部電路板,且其中間隔件係藉由對應的一黏著層分別連接於光學元件和膠層。 According to the present invention, a laser packaging structure is provided, comprising: a laser chip, the laser chip including a first conductive structure and a second conductive structure disposed on a first surface thereon; an adhesive layer surrounding at least four sides of the laser chip; a spacer correspondingly disposed on the adhesive layer and surrounding the laser chip; and an optical element disposed on the spacer facing a second surface of the laser chip, the second surface being opposite to the first surface; wherein the laser chip is electrically connected to an external circuit board via the first conductive structure and the second conductive structure, and wherein the spacer is respectively connected to the optical element and the adhesive layer via corresponding adhesive layers.
10:雷射封裝結構 10: Laser Packaging Structure
100:陶瓷基板 100: Ceramic substrate
110:雷射晶片 110: Laser Chip
120:線路 120: Route
130:間隔件 130: Spacer
140:區隔空間 140: Separating Spaces
150:光學元件 150: Optical Components
20A:雷射封裝結構 20A: Laser Packaging Structure
20B:雷射封裝結構 20B: Laser Packaging Structure
210:電性連通結構 210: Electrical connection structure
220:光電二極體 220: Photodiode
230:線路 230: Line
30:封裝結構 30: Packaging Structure
32:外部電路板 32: External Circuit Board
34:錫膏 34: Tin plaster
310:雷射晶片 310: Laser Chip
310A:表面 310A: Surface
310B:表面 310B: Surface
312:第一導電結構 312: First Conductor Structure
314:第二導電結構 314: Second Conductive Structure
320:膠層 320: Adhesive layer
320’:封裝膠材 320’: Encapsulation material
330:間隔件 330: Spacer
340:內腔體 340: Internal cavity
350:光學元件 350: Optical Components
352:玻璃層 352: Glass layer
354:圖形化膠材層 354: Graphical adhesive layer
354’:圖形化膠材層 354’: Graphical adhesive layer
356:導電線路層 356:Conductive line layer
358A:第一導電線路部分 358A: First Conductor Circuit Section
358B:第二導電線路部分 358B: Second Conductor Circuit Section
360:黏著層 360: Adhesion Layer
362:黏著層 362: Adhesive Layer
370:接線結構 370: Wiring Structure
40:封裝結構 40: Packaging Structure
420:膠層 420: Adhesive layer
420A:貫穿部 420A: Through section
430:間隔件 430: Spacer
440:內腔體 440: Internal cavity
442:電性導通結構 442: Electrically Conductive Structure
460:黏著層 460: Adhesive layer
462:黏著層 462: Adhesive layer
462A:正極 462A: Positive
462B:負極 462B: Negative
502:膠帶 502: Adhesive tape
504:膠層 504: Adhesive Layer
506:玻璃片 506: Glass Plate
522:保護層 522: Protective Layer
70:封裝結構 70: Packaging Structure
700:基板 700:Substrate
700A:表面 700A: Surface
702A、702B:第一電性導通柱 702A, 702B: First electrical conduction post
704A、704B:第二電性導通柱 704A, 704B: Second electrical conduction post
710:雷射晶片 710: Laser Chip
730:支架 730: Bracket
730A:側壁 730A: Sidewall
732:定位部 732: Positioning Department
732A:空間 732A: Space
732B:斜面 732B: Bevel
732C:底部 732C: Bottom
732D:連通空間 732D: Connecting Spaces
734:導槽 734: Guide groove
736:密封膠層 736: Sealant layer
738:次導槽 738: Secondary Guide Channel
740:內腔體 740: Internal cavity
742:電性導通結構 742: Electrically Conductive Structure
750:光學元件 750: Optical Components
760:導電結構 760:Conductive structure
H:支架的高度 H: Height of the bracket
t:晶片的厚度 t: wafer thickness
W:定位部的寬度 W: Width of the positioning section
L:定位部的長度 L: Length of the positioning section
為能更進一步瞭解本發明之特徵與技術內容,請參閱下述有關本發明實施例之詳細說明及如附圖式。惟所揭詳細說明及如附圖式係僅提供參考與說明之用,並非用以對本發明加以限制;其中: 第1圖係一種習知雷射封裝結構的剖面示意圖。 To further understand the features and technical content of this invention, please refer to the following detailed description of embodiments of this invention and the accompanying drawings. However, the detailed description and accompanying drawings are provided for reference and illustration only and are not intended to limit the invention; wherein: Figure 1 is a schematic cross-sectional view of a conventional laser packaging structure.
第2圖係一種習知設有保護機制的雷射封裝結構的剖面示意圖。 Figure 2 is a cross-sectional schematic diagram of a conventional laser packaging structure with a protective mechanism.
第3圖係根據本發明之一實施例的雷射封裝結構之剖面示意圖。 Figure 3 is a schematic cross-sectional view of a laser packaging structure according to one embodiment of the present invention.
第4A圖至第4F圖係本發明之一實施例的雷射封裝結構製作流程步驟之剖面示意圖。 Figures 4A to 4F are cross-sectional schematic diagrams illustrating the manufacturing process of a laser packaging structure according to one embodiment of the present invention.
第5A圖至第5C圖係本發明之一實施例的雷射封裝結構製作流程步驟之剖面示意圖。 Figures 5A to 5C are cross-sectional schematic diagrams illustrating the manufacturing process of a laser packaging structure according to one embodiment of the present invention.
第6A圖至第6B圖係本發明之一實施例的雷射封裝結構製作流程步驟之剖面示意圖。 Figures 6A and 6B are cross-sectional schematic diagrams illustrating the manufacturing process of a laser packaging structure according to one embodiment of the present invention.
第7A圖至第7B圖係本發明之一實施例的雷射封裝結構製作流程步驟之剖面示意圖。 Figures 7A and 7B are cross-sectional schematic diagrams illustrating the manufacturing process of a laser packaging structure according to one embodiment of the present invention.
第8圖係根據本發明之一實施例的雷射封裝結構之剖面示意圖。 Figure 8 is a schematic cross-sectional view of a laser packaging structure according to one embodiment of the present invention.
第9A圖與第9B圖係根據本發明之一實施例及其變化例的雷射封裝結構之剖面示意圖。 Figures 9A and 9B are schematic cross-sectional views of a laser packaging structure according to one embodiment and variations of the present invention.
第10A圖及第10B圖係本發明實施例中膠層之貫穿部的上視及剖視示意圖。 Figures 10A and 10B are top and cross-sectional schematic diagrams of the penetrating portion of the adhesive layer in an embodiment of the present invention.
第11A圖到第11G圖係本發明之一實施例的光學元件的剖面和上視示意圖。 Figures 11A to 11G are cross-sectional and top-view schematic diagrams of an optical element according to one embodiment of the present invention.
第12圖係根據本發明之一實施例的雷射封裝結構之剖面示意圖。 Figure 12 is a schematic cross-sectional view of a laser packaging structure according to one embodiment of the present invention.
第13A圖到第13C圖係根據第14A圖中A-A’線所示之支架剖面圖。 Figures 13A to 13C are cross-sectional views of the support shown by line A-A' in Figure 14A.
第14A圖至第14D圖,係本發明各種實施例中支架的上視圖。 Figures 14A to 14D are top views of the support structure in various embodiments of the present invention.
下文係參照圖式、並且以示例實施例說明本發明之概念,在圖式或說明中,相似或相同的部分係使用相同的元件符號;再者,圖式係為利於理解而繪製,圖式中各層之厚度與形狀並非元件之實際尺寸或成比例關係。 The following description, with reference to the drawings and illustrative examples, illustrates the concepts of this invention. Similar or identical parts in the drawings and description use the same component symbols. Furthermore, the drawings are created for ease of understanding; the thickness and shape of each layer in the drawings do not represent the actual dimensions or proportions of the components.
請參閱第3圖,係根據本發明之一第一實施例的雷射封裝結構之剖面示意圖。本實施例之封裝結構30係以晶圓級封裝製程所製得之雷射封裝結構,其包括:雷射晶片310用以發射一雷射光,雷射晶片310包括位於其表面310B上的第一導電結構312和第二導電結構314,雷射晶片310的四個側面係被膠層320圍繞。膠層320上相應地設有間隔件330,間隔件330圍繞雷射晶片310而形成一空間,此空間於封裝完成後即形成封裝結構30的一內腔體340。間隔件330上覆以一光學元件350,光學元件350係朝向雷射晶片310的一表面310A而設於間隔件330上,雷射晶片310的表面310A與其表面310B相對。光學元件350包含微型透鏡陣列(Micro Lens Array,MLA)或繞射光學元件(Diffraction Optical Element,DOE),可將雷射晶片310射出的光束轉換成均勻的面光源、陣列點光源或者不規則散佈的點光源。在封裝結構30之內腔體340中的雷射晶片310係藉由其第一導電結構312與第二導電結構314電性連接於一外部電路板32,且其中間隔件330係藉由對應的黏著層360、362分別連接於光學元件350和膠層320。在本實施例中,黏著層360、362之材料可為一般不具導電性的黏著劑,僅供間隔件330分別固定連接於光學元件350和下方的膠層320用。在本實施例中,當一電流自外部電路板32藉由流經第一導電結構312和第二導電結構314而驅動雷射晶片310時,雷射晶片310可發出一雷射光通過光學元件350。在光學元件350可包含一導電線路層(參考後續第11A圖所示),其中導電線路層材料包含透明導電材料,例如ITO(Indium Tin Oxide),以避免阻擋雷射晶片310射出的光束,導電線路層係用於偵測光學元件350的運作情形。當光學元件350正常運作時,導電線路層會導通讓電流通過;當光學元件350受損時,導電線路層也可能會破損而導致電阻發生變化或者斷路。外部電路板32具有一回饋電路(圖未示)與雷射晶片310電連接,並藉由一接線結構370電連接光學元件350的導電線路層與外部電路板32上的回饋電路,在一實施例中,回饋電路包含一電阻感測器及一斷路器所組成。藉此,當光學元件350損傷時,光學元件350裡的導電線路層也可能會受損而電阻發生變化或者斷路,此時與導電線路層電連接的回饋電路,藉由其包含的電阻感測器可立即偵測到光學元件350上導電線路層的電阻發生變化,並可利用其斷路器中止雷射晶片310發出雷射光。 Please refer to Figure 3, which is a cross-sectional schematic diagram of a laser packaging structure according to a first embodiment of the present invention. The packaging structure 30 of this embodiment is a laser packaging structure manufactured by a wafer-level packaging process, which includes: a laser chip 310 for emitting a laser light, the laser chip 310 including a first conductive structure 312 and a second conductive structure 314 located on its surface 310B, and the four sides of the laser chip 310 being surrounded by an adhesive layer 320. A spacer 330 is correspondingly provided on the adhesive layer 320, and the spacer 330 surrounds the laser chip 310 to form a space, which forms an inner cavity 340 of the packaging structure 30 after packaging is completed. An optical element 350 is covered on the spacer 330. The optical element 350 is disposed on the spacer 330 facing a surface 310A of the laser chip 310, with surface 310A and surface 310B of the laser chip 310 opposite each other. The optical element 350 includes a microlens array (MLA) or a diffraction optical element (DOE), which can convert the light beam emitted from the laser chip 310 into a uniform surface light source, an array of point light sources, or an irregularly distributed point light source. The laser chip 310 within the cavity 340 of the package structure 30 is electrically connected to an external circuit board 32 via its first conductive structure 312 and second conductive structure 314. The spacer 330 is connected to the optical element 350 and the adhesive layer 320 via corresponding adhesive layers 360 and 362, respectively. In this embodiment, the adhesive layers 360 and 362 can be made of a general non-conductive adhesive, used only to fix the spacer 330 to the optical element 350 and the underlying adhesive layer 320, respectively. In this embodiment, when a current from the external circuit board 32 drives the laser chip 310 through the first conductive structure 312 and the second conductive structure 314, the laser chip 310 can emit laser light that passes through the optical element 350. The optical element 350 may include a conductive layer (see Figure 11A below), wherein the conductive layer material includes a transparent conductive material, such as ITO (Indium Tin Oxide), to avoid blocking the light beam emitted by the laser chip 310. The conductive layer is used to detect the operation of the optical element 350. When the optical element 350 is operating normally, the conductive layer will conduct to allow current to flow; when the optical element 350 is damaged, the conductive layer may also be damaged, resulting in a change in resistance or an open circuit. The external circuit board 32 has a feedback circuit (not shown) electrically connected to the laser chip 310, and is electrically connected to the conductive layer of the optical element 350 and the feedback circuit on the external circuit board 32 via a wiring structure 370. In one embodiment, the feedback circuit comprises a resistance sensor and a circuit breaker. Therefore, when the optical element 350 is damaged, the conductive layer within the optical element 350 may also be damaged, resulting in a change in resistance or an open circuit. At this time, the feedback circuit electrically connected to the conductive layer, through its included resistance sensor, can immediately detect the change in resistance of the conductive layer on the optical element 350, and can use its circuit breaker to stop the laser chip 310 from emitting laser light.
請參閱第4A圖至第4F圖,係說明在本發明之一實施例的雷射晶片封裝結構30之製作流程的各步驟之結構的剖面示意圖。 Please refer to Figures 4A to 4F, which are schematic cross-sectional views illustrating the structure of each step in the fabrication process of the laser chip package structure 30 according to one embodiment of the present invention.
在本實施例中,係以晶圓級封裝製程來製得VCSEL元件之晶片級封裝結構。首先,如第4A圖所示,於膠帶(Tape)502上進行雷射晶片310之排片,雷射晶片310上具有第一導電結構312和第二導電結構314。接著,如第4B圖所示,轉移排片後的結構,將排片後的結構倒置於覆有膠層504的玻璃片506上並去除膠帶502以露出雷射晶片310的表面310A。 In this embodiment, the wafer-level package structure of the VCSEL device is fabricated using a wafer-level packaging process. First, as shown in Figure 4A, the laser chip 310 is laid on tape 502. The laser chip 310 has a first conductive structure 312 and a second conductive structure 314. Next, as shown in Figure 4B, the laid-up structure is transferred. The structure is inverted onto a glass sheet 506 coated with an adhesive layer 504, and the tape 502 is removed to expose the surface 310A of the laser chip 310.
接著,利用例如刷膠的方式,於所形成的結構中填入或灌入封裝膠材320’,使封裝膠材320’包覆各個雷射晶片310,如第4C圖所示。接著,藉由例如研磨拋平及/或噴砂方式移除覆蓋雷射晶片310表面的封裝膠材320’,形成如第4D圖所示之結構;其中,封裝膠材320’經部分移除後,係形成圍繞雷射晶片310的四個側面、且與雷射晶片310表面共平面之膠層320。 Next, using methods such as brushing, encapsulating adhesive 320' is filled or poured into the formed structure, so that the encapsulating adhesive 320' covers each laser chip 310, as shown in Figure 4C. Then, the encapsulating adhesive 320' covering the surface of the laser chip 310 is removed by methods such as grinding, polishing, and/or sandblasting, forming the structure shown in Figure 4D; wherein, after partial removal of the encapsulating adhesive 320', an adhesive layer 320 is formed surrounding the four sides of the laser chip 310 and coplanar with the surface of the laser chip 310.
接著,藉由晶圓接合方式,於如第4D圖所示之結構上連接間隔件330和光學元件350,形成如第4E圖所示之結構。在此例中,封裝膠材320’已經拋平為與雷射晶片310共平面、且圍繞雷射晶片310的四個側面之膠層320,間隔件330係對應地連接於膠層320上、且相應地圍繞雷射晶片310的四個側面,形成了封裝結構的內腔體340或空氣層。 Next, using wafer bonding, the spacer 330 and the optical element 350 are connected to the structure shown in Figure 4D, forming the structure shown in Figure 4E. In this example, the encapsulating material 320' has been polished into a coplanar layer 320 surrounding the four sides of the laser wafer 310. The spacer 330 is correspondingly connected to the encapsulating layer 320 and correspondingly surrounds the four sides of the laser wafer 310, forming the inner cavity 340 or air layer of the encapsulation structure.
接著,移除膠帶層504和玻璃片506,形成如第4F圖之結構。 Next, the adhesive tape layer 504 and the glass sheet 506 are removed, forming the structure shown in Figure 4F.
接著進行切割,將如第4F圖所示之結構切割為數個獨立的結構後,即形成第3圖所示本發明之雷射晶片封裝結構30。封裝結構30後續係藉由外接的接線結構370而使光學元件350電性連接於外部電路板32,即形成如第3圖所示之結構。 Next, the structure shown in Figure 4F is cut into several independent structures, forming the laser chip package structure 30 of this invention shown in Figure 3. The package structure 30 is then connected to the external circuit board 32 via an external wiring structure 370, thus forming the structure shown in Figure 3.
可替代地,形成第4D圖所示結構中的膠層320時,可在第4B圖所示結構中以鋼板刷膠方式,在雷射晶片310之間的隙縫填入封裝膠材形成膠層 320,鋼板係建置為可遮蔽雷射晶片310,避免封裝膠材接觸雷射晶片310的表面310A。 Alternatively, when forming the adhesive layer 320 in the structure shown in Figure 4D, the adhesive layer 320 can be formed by brushing adhesive onto a steel plate in the structure shown in Figure 4B, filling the gaps between the laser wafers 310 with encapsulating adhesive. The steel plate is configured to shield the laser wafers 310, preventing the encapsulating adhesive from contacting the surface 310A of the laser wafers 310.
第5A~5C圖顯示另一實施例的結構與製程,如第5A圖所示,於雷射晶片310的表面310A上設置保護層522(例如乾膜式保護層)後,利用曝光顯影方式打開欲填入封裝膠材的位置,並填入封裝膠材而形成膠層320,形成如第5A圖所示結構。接著進行拋光製程清除保護層522上的溢出的封裝膠材,並移除保護層522後,藉由對位接合的方式,連接光學元件350與膠層320,後續再移除膠帶層504和玻璃片506,形成如第5B圖之結構。接著進行切割製程,將第5B圖所示之結構切割為獨立結構之後,形成本發明之雷射晶片封裝結構30A,如第5C圖所示。 Figures 5A-5C show the structure and process of another embodiment. As shown in Figure 5A, after a protective layer 522 (e.g., a dry film protective layer) is provided on the surface 310A of the laser wafer 310, the position to be filled with encapsulating material is opened by exposure and development, and encapsulating material is filled to form an adhesive layer 320, forming the structure shown in Figure 5A. Next, a polishing process is performed to remove the overflowing encapsulating material on the protective layer 522, and after removing the protective layer 522, the optical element 350 and the adhesive layer 320 are connected by alignment bonding. Subsequently, the adhesive tape layer 504 and the glass sheet 506 are removed to form the structure shown in Figure 5B. Next, a dicing process is performed to cut the structure shown in Figure 5B into independent structures, forming the laser chip package structure 30A of this invention, as shown in Figure 5C.
第6A~6B圖顯示另一實施例的結構與製程,接續第4C圖所示之封裝膠材320’結構後,視實際應用所需,不拋平或移除雷射晶片310表面310A的封裝膠材320’,而是保留封裝膠材作為膠層320,於膠層320上連接間隔件330和光學元件350,並移除膠帶層504和玻璃片506後,形成如第6A圖所示之結構。接著將第6A圖所示之結構切割後,形成本發明之雷射晶片封裝結構30B,如第6B圖所示。 Figures 6A-6B illustrate the structure and process of another embodiment. Following the encapsulation material 320' structure shown in Figure 4C, depending on the actual application requirements, the encapsulation material 320' on the surface 310A of the laser chip 310 is not flattened or removed. Instead, the encapsulation material is retained as an adhesive layer 320. The spacer 330 and the optical element 350 are connected to the adhesive layer 320. After removing the tape layer 504 and the glass sheet 506, the structure shown in Figure 6A is formed. Then, the structure shown in Figure 6A is cut to form the laser chip encapsulation structure 30B of the present invention, as shown in Figure 6B.
第7A~7B圖顯示另一實施例的結構與製程。接續第4C圖所示之封裝膠材320’結構後,對覆蓋於雷射晶片310表面310A上之封裝膠材進行圖案化,形成圖形化膠材層354’,例如微型透鏡陣列(Micro Lens Array,MLA)或繞射光學元件(Diffraction Optical Element,DOE),提供與光學元件350中的圖形化膠材層354不同的光學作用,例如將雷射晶片310發出的光束形成均勻的 面光源、陣列點光源或不規則點光源,如第7A圖所示。接著將第7A圖所示之結構切割後,形成本發明之雷射晶片封裝結構30C,如第7B圖所示。 Figures 7A and 7B illustrate the structure and fabrication process of another embodiment. Following the encapsulation material 320' structure shown in Figure 4C, the encapsulation material covering the surface 310A of the laser chip 310 is patterned to form a patterned encapsulation material layer 354', such as a microlens array (MLA) or a diffraction optical element (DOE), providing optical effects different from the patterned encapsulation material layer 354 in the optical element 350, such as shaping the light beam emitted from the laser chip 310 into a uniform surface light source, an array of point light sources, or an irregular point light source, as shown in Figure 7A. The structure shown in Figure 7A is then cut to form the laser chip encapsulation structure 30C of the present invention, as shown in Figure 7B.
第8圖顯示另一實施例的結構,亦可進一步於光學元件350的外側表面(即未形成圖形化膠材層354的一側)上形成另一圖形化膠材層354”,提供與雷射晶片310表面310A上之圖形化膠材層354’不同、及/或與光學元件350中的圖形化膠材層354不同的光學作用,例如將雷射晶片310發出的光束形成均勻的面光源、陣列點光源或不規則點光源,經切割後形成如第8圖所示之雷射晶片封裝結構30D。 Figure 8 shows another embodiment of the structure, in which another patterned adhesive layer 354' can be formed on the outer surface of the optical element 350 (i.e., the side without the patterned adhesive layer 354). This provides optical effects different from and/or different from the patterned adhesive layer 354' on the surface 310A of the laser chip 310, such as shaping the light beam emitted by the laser chip 310 into a uniform surface light source, an array of point light sources, or an irregular point light source. After dicing, this forms the laser chip package structure 30D as shown in Figure 8.
如第9A、9B圖所示,根據本發明另一實施例,封裝結構中之間隔件亦可形成為包覆有貫穿其間的電性導通結構,直接供電性導通用。請參閱第9A圖和第9B圖,係根據本發明之一實施例及其變化例的雷射封裝結構40A、40B之剖面示意圖。封裝結構40A、40B可以相同或類似的製程製造,其具有與前述封裝結構30相似的構成,惟其與封裝結構30之差異在於,在本實施例中,圍繞雷射晶片310而形成內腔體440的間隔件430係包括有貫穿其間的電性導通結構442;藉由導電層460連接光學元件350的導電線路層及電性導通結構442;膠層420中亦形成貫穿部420A對應電性導通結構442,貫穿部420A中填入導電性膠材而形成導電層462與電性導通結構442連接。在本實施例中,電性導通結構442及導電層460、462A、462B的材質可選擇導電性膠材,例如銀膠、錫膏或異方性導電膠(Self Assembly Anisotropic Conductive Paste,SAP)等,或者電鍍的金屬材料,例如金、銀、銅以及上述材料的合金。在本實施例中,雷射晶片310的導電結構312、314和封裝結構的導電層462A、462B係分別作為正極和負極而直接連接於外部電路板32,形成如第9A圖所示之封裝結構40A。或者 是,導電層462A和462B可另藉由例如錫膏34而連接於外部電路板32,形成如第9B圖所示之封裝結構40B。亦即,在本實施例中,封裝結構40A、40B之光學元件350係藉由導電層460、電性導通結構442及導電層462A、462B而電性連接於外部電路板32。在第9A、9B圖所示實施例中,膠層420中須形成有貫穿部420A,其位置係對應於間隔件430中所包覆的電性導通結構442的位置以及光學元件350的電極位置。關於膠層中貫穿部(如第9A、9B圖所示之貫穿部420A)的形成,可在藉由鋼板刷膠方式施用封裝膠材時,於建置鋼板時遮蔽晶片、以及遮蔽與光學元件350的電極相對應的位置,避免封裝膠材填入其中,從而形成膠層之貫穿部420A,形成如第10A圖(上視示意圖)和第10B圖(剖視示意圖)所示之結構。在貫穿部420A中填以導電性黏著材料而形成導電層462後,於所形成的結構上連接具有電性導通結構442的間隔件430、以及光學元件350後,即形成如第9A、9B圖所示之雷射晶片封裝結構40A、40B。如前述說明,在此實施例中,封裝結構40A、40B之光學元件350係藉由電性導通結構442而電性連接於外部電路板32,因此無須設置外接於電路板之接線結構。 As shown in Figures 9A and 9B, according to another embodiment of the present invention, the spacer in the package structure can also be formed to cover an electrically conductive structure passing through it, directly supplying electrical conductivity. Please refer to Figures 9A and 9B, which are schematic cross-sectional views of laser package structures 40A and 40B according to an embodiment and variations of the present invention. Package structures 40A and 40B can be manufactured using the same or similar processes and have a similar structure to the aforementioned package structure 30. However, the difference between them and package structure 30 is that, in this embodiment, the spacer 430 that forms the inner cavity 440 around the laser chip 310 includes an electrically conductive structure 442 passing through it; the conductive layer 460 connects the conductive line layer of the optical element 350 and the electrically conductive structure 442; a penetrating portion 420A corresponding to the electrically conductive structure 442 is also formed in the adhesive layer 420, and conductive adhesive is filled into the penetrating portion 420A to form a conductive layer 462 connected to the electrically conductive structure 442. In this embodiment, the materials of the electrically conductive structure 442 and the conductive layers 460, 462A, and 462B can be conductive adhesives, such as silver paste, solder paste, or self-assembly anisotropic conductive paste (SAP), or electroplated metal materials, such as gold, silver, copper, and alloys thereof. In this embodiment, the conductive structures 312 and 314 of the laser chip 310 and the conductive layers 462A and 462B of the package structure are directly connected to the external circuit board 32 as positive and negative electrodes, respectively, forming the package structure 40A as shown in Figure 9A. Alternatively, conductive layers 462A and 462B can be further connected to the external circuit board 32 by, for example, solder paste 34, forming a package structure 40B as shown in Figure 9B. That is, in this embodiment, the optical element 350 of the package structures 40A and 40B is electrically connected to the external circuit board 32 by conductive layer 460, electrical conduction structure 442, and conductive layers 462A and 462B. In the embodiment shown in Figures 9A and 9B, a penetrating portion 420A must be formed in the adhesive layer 420, the position of which corresponds to the position of the electrical conduction structure 442 covered in the spacer 430 and the electrode position of the optical element 350. Regarding the formation of the through portion in the adhesive layer (as shown in Figures 9A and 9B, the through portion 420A) can be formed by shielding the wafer and the position corresponding to the electrode of the optical element 350 when applying the encapsulating adhesive by brushing it onto a stencil during the stencil construction, thus preventing the encapsulating adhesive from filling in it, thereby forming the through portion 420A of the adhesive layer, forming the structure shown in Figures 10A (top view schematic diagram) and 10B (cross-sectional view schematic diagram). After filling the through portion 420A with a conductive adhesive material to form a conductive layer 462, the spacer 430 having an electrically conductive structure 442 and the optical element 350 are connected to the formed structure, thereby forming the laser wafer packaging structures 40A and 40B as shown in Figures 9A and 9B. As explained above, in this embodiment, the optical components 350 of packages 40A and 40B are electrically connected to the external circuit board 32 via an electrical conduction structure 442, thus eliminating the need for external wiring connections to the circuit board.
在本發明中,封裝膠材及/或導電性黏著材料皆可以鋼板刷膠的方式塗佈,從而分別形成封裝結構中的膠層和導電層;藉此,除可穩定控制膠量以外,亦可提升製程的產出量(Units Per Hour,UPH),有利於製程成本的降低。此外,由於刷膠塗佈過程中係施以一定的壓力使膠材填入,因此可於雷射晶片310周圍預留空間供導電性黏著膠材(例如錫膏)填入,於後續進行表面黏著(Surface Mounting Technology,SMT)時,導電層462(如第9A圖所示)或錫膏34(如第9B圖所示)將與外部電路板32的電極(圖未示)連接而形成導通電路。 In this invention, the encapsulating adhesive and/or conductive adhesive can be applied by brushing adhesive onto a stencil, thereby forming the adhesive layer and conductive layer in the encapsulation structure respectively. In this way, in addition to the stable control of the amount of adhesive, the output of the process (Units Per Hour, UPH) can also be increased, which is beneficial to the reduction of process costs. Furthermore, since a certain pressure is applied during the adhesive application process to fill the adhesive material, space can be reserved around the laser chip 310 for conductive adhesive materials (such as solder paste) to fill. During subsequent surface mounting technology (SMT), the conductive layer 462 (as shown in Figure 9A) or the solder paste 34 (as shown in Figure 9B) will connect with the electrodes (not shown) of the external circuit board 32 to form a conductive circuit.
請參閱第11A圖和第11B圖,係進一步說明根據本發明之一實施例的光學元件350的剖面示意圖和上視示意圖,其中第11A圖係示意說明沿著第11B圖中線A-A’的箭頭方向B所示之剖面結構。在本實施例中,光學元件350包括一玻璃層352、位於玻璃層352上且朝向雷射晶片側的圖形化膠材層354、以及位於玻璃層352和圖形化膠材層354之間的導電線路層356。由第11B圖觀之,導電線路層356進一步與位於玻璃層352之周圍區域的一第一導電線路部分358A和一第二導電線路部分358B連接,且第一導電線路部分358A與第二導電線路部分358B彼此在空間上不互相連接,係藉由導電線路層356互相電性連接,並分別設於周圍區域中彼此相對的兩側邊上。 Please refer to Figures 11A and 11B, which are schematic cross-sectional views and top views further illustrating the optical element 350 according to one embodiment of the present invention. Figure 11A schematically illustrates the cross-sectional structure shown along the arrow direction B of line A-A' in Figure 11B. In this embodiment, the optical element 350 includes a glass layer 352, a patterned adhesive layer 354 located on the glass layer 352 and facing the laser chip side, and a conductive line layer 356 located between the glass layer 352 and the patterned adhesive layer 354. As seen in Figure 11B, the conductive layer 356 is further connected to a first conductive line portion 358A and a second conductive line portion 358B located in the surrounding area of the glass layer 352. The first conductive line portion 358A and the second conductive line portion 358B are not spatially connected to each other, but are electrically connected through the conductive layer 356, and are respectively located on opposite sides of each other in the surrounding area.
在一實施例中,第一導電線路部分358A和第二導電線路部分358B係可由電鍍或塗佈導電材料而形成,導電材料係包含銅、銀、金、錫等金屬。此外,由第11B圖觀之,第一導電線路部分358A和第二導電線路部分358B係經設計而呈直線形(如第11B圖所示)、圓形(如第11C圖所示)、方形(如第11D圖所示)、L字形(如第11E圖所示)、U字形(如第11F圖所示)、或前述形狀組合中其一。此外,第一導電線路部分358A和第二導電線路部分358B的數量亦可不限於各一個,可於玻璃層352的相對側部上各設有複數個第一導電線路部分358A和第二導電線路部分358B(如第11G圖所示)。 In one embodiment, the first conductive line portion 358A and the second conductive line portion 358B may be formed by electroplating or coating with a conductive material, which may include metals such as copper, silver, gold, and tin. Furthermore, as seen in Figure 11B, the first conductive line portion 358A and the second conductive line portion 358B are designed to be linear (as shown in Figure 11B), circular (as shown in Figure 11C), square (as shown in Figure 11D), L-shaped (as shown in Figure 11E), U-shaped (as shown in Figure 11F), or one of the aforementioned combinations of shapes. Furthermore, the number of the first conductive line portion 358A and the second conductive line portion 358B is not limited to one each; a plurality of the first conductive line portion 358A and the second conductive line portion 358B can be provided on opposite sides of the glass layer 352 (as shown in Figure 11G).
在本發明中,光學元件350包括例如、但不限於:微型透鏡陣列(Micro Lens Array)、具有導電線路之氧化銦錫(ITO)玻璃、繞射光學元件(Diffraction Optical Element,DOE)等。在一實施例中,光學元件350亦可為複合式的光學元件,即在圖形化膠材層354包含不同的圖案以形成不同的透鏡結構,例如微型透鏡陣列(Micro Lens Array,MLA)和繞射光學元件 (Diffraction Optical Element,DOE),同時將雷射光束轉換成不同的光型態,例如面光源、陣列點光源和不規則散佈的點光源。 In this invention, the optical element 350 includes, for example, but not limited to, a microlens array, indium tin oxide (ITO) glass with conductive lines, and a diffraction optical element (DOE). In one embodiment, the optical element 350 can also be a composite optical element, i.e., the patterned adhesive layer 354 contains different patterns to form different lens structures, such as a microlens array (MLA) and a diffraction optical element (DOE), simultaneously converting the laser beam into different light patterns, such as a surface light source, an array of point light sources, and irregularly distributed point light sources.
在上述實施例中,雷射晶片310係覆晶形式(Flip Chip Type)之晶片,膠層320、420及封裝膠材320’可選擇透光或不透光之膠材,例如環氧樹脂(Epoxy)或矽膠(Silicon)等材質。間隔件330、430可為例如玻璃、陶瓷、或是可利用3D列印或鑄模成形(Molding)而成之塑料等。 In the above embodiment, the laser chip 310 is a flip-chip type chip. The adhesive layers 320 and 420 and the encapsulating material 320' can be made of transparent or opaque materials, such as epoxy resin or silicone. The spacers 330 and 430 can be made of materials such as glass, ceramic, or plastics that can be formed using 3D printing or molding.
請參閱第12圖,係根據本發明之一實施例的雷射封裝結構之剖面示意圖。根據本實施例之封裝結構70包括:基板700、以及設於基板700之一表面700A上之雷射晶片710。基板700可為一陶瓷基板,基板700中形成有貫穿基板700的第一電性導通柱702A、702B以及第二電性導通柱704A、704B,其中第一電性導通柱702A、702B連接於雷射晶片710,其分別作為正、負極而供雷射晶片710對外電性連接。封裝結構70包括支架730,支架730係設於表面700A上且圍繞雷射晶片710,其高度H大於雷射晶片710的厚度t,從而提供了內腔體740,內腔體740是作為封裝結構70的氣層(氣層中可以填入惰性氣體或空氣,也可以被抽真空)用。封裝結構70包括光學元件750,光學元件750藉由施用於支架730上之導電膠所形成之導電結構760而連接於支架730。在本實施例中,光學元件750係具有導電線路之ITO光學元件。 Please refer to Figure 12, which is a cross-sectional schematic diagram of a laser packaging structure according to an embodiment of the present invention. The packaging structure 70 according to the present embodiment includes: a substrate 700, and a laser chip 710 disposed on a surface 700A of the substrate 700. The substrate 700 may be a ceramic substrate, and first electrical conductive posts 702A and 702B and second electrical conductive posts 704A and 704B are formed in the substrate 700, wherein the first electrical conductive posts 702A and 702B are connected to the laser chip 710, and respectively serve as positive and negative electrodes to provide the laser chip 710 with external electrical connections. The package structure 70 includes a support 730 disposed on surface 700A and surrounding laser wafer 710. The height H of the support 730 is greater than the thickness t of laser wafer 710, thereby providing an inner cavity 740. The inner cavity 740 serves as a vapor chamber for the package structure 70 (the vapor chamber can be filled with inert gas or air, or it can be evacuated). The package structure 70 includes an optical element 750, which is connected to the support 730 via a conductive structure 760 formed by conductive adhesive applied to the support 730. In this embodiment, the optical element 750 is an ITO optical element with conductive lines.
根據本發明,支架730係以例如塑膠射出方式、或鑄模成形、3D列印等方式所形成,且係形成為包括垂直貫穿其間之電性導通結構742,使得光學元件750可藉此電性導通結構742而與貫穿基板700的第二電性導通柱704A、704B分別作正、負極之電性連接。導電結構760之導電膠的材質可選擇例如銀膠、錫膏、異方導電膠或其他導電性材料。 According to the present invention, the support 730 is formed by means such as plastic injection molding, molding, or 3D printing, and is formed to include an electrically conductive structure 742 perpendicularly penetrating it, allowing the optical element 750 to be electrically connected, respectively, to the second electrically conductive posts 704A and 704B penetrating the substrate 700 via this electrically conductive structure 742 as positive and negative electrodes, respectively. The conductive adhesive of the conductive structure 760 can be made of materials such as silver paste, solder paste, anisotropic conductive adhesive, or other conductive materials.
根據本發明,支架730係利用塑膠射出、鑄模成形或3D列印等方式所形成。支架730包覆電性導通結構742,並被施用例如銀膠、錫膏或異方導電膠等之導電膠以貼合光學元件750。光學元件750透過導電結構760和支架730內部之電性導通結構742電性連接於底層基板700的第二電性導通柱704A、704B。可替代地,亦可利用雷射直接成形(Laser Direct Structuring,LDS)技術成形支架730後,利用電鍍方式或化學鍍製方式形成金屬鍍層,進而形成電路或導電結構760,以供對光學元件750以及對底側基板700之電性連接。 According to the present invention, the bracket 730 is formed by plastic injection molding, molding, or 3D printing. The bracket 730 covers the electrically conductive structure 742 and is bonded to the optical element 750 by applying a conductive adhesive such as silver paste, solder paste, or anisotropic conductive adhesive. The optical element 750 is electrically connected to the second electrically conductive posts 704A and 704B of the underlying substrate 700 through the conductive structure 760 and the electrically conductive structure 742 inside the bracket 730. Alternatively, the support 730 can be formed using Laser Direct Structuring (LDS) technology, followed by electroplating or chemical plating to form a metal plating layer, thereby creating a circuit or conductive structure 760 for electrical connection to the optical element 750 and the bottom substrate 700.
根據本發明,施用於支架730上的導電結構760係可選擇地形成為直線形、圓形、方形、L字形、U字形、或前述形狀組合中其一。此外,在支架730單側上的導電結構數量亦可不限於各一個,可於其相對側部上各設有複數個導電結構。前述導電結構的各種上視形狀係分別對應於第11B圖至第11G圖等上視示意圖之說明。 According to the present invention, the conductive structure 760 applied to the bracket 730 can be selectively formed as a straight line, circle, square, L-shape, U-shape, or a combination of the aforementioned shapes. Furthermore, the number of conductive structures on each side of the bracket 730 is not limited to one; multiple conductive structures can be provided on opposite sides. The various top-view shapes of the aforementioned conductive structures correspond to the descriptions of the top-view schematic diagrams in Figures 11B to 11G, respectively.
光學元件750可具有與第11A圖所示類似之構成,於此即不贅述。 The optical element 750 may have a similar configuration to that shown in Figure 11A, and will not be described in detail here.
請參閱第13A圖至第13C圖、以及第14A圖至第14D圖,係分別以剖面圖和上視圖示意說明本發明實施例中支架的不同設計。 Please refer to Figures 13A to 13C and Figures 14A to 14D, which illustrate different designs of the support in embodiments of the present invention using sectional and top views, respectively.
第13A圖和第13B圖係根據第14A圖中A-A’線沿著箭頭方向B所示之支架剖面圖,其說明本發明之支架的實施態樣。如第13A圖所示,根據本發明,支架730係形成為由圍繞雷射晶片的四個側壁構成之結構,側壁中包覆有貫穿其間的前述電性導通結構(圖中未示)。 Figures 13A and 13B are cross-sectional views of the support shown along line A-A' in Figure 14A, pointing in the direction of arrow B, illustrating an embodiment of the support of the present invention. As shown in Figure 13A, according to the present invention, the support 730 is formed as a structure consisting of four sidewalls surrounding the laser chip, with the aforementioned electrical conductive structure (not shown) penetrating through the sidewalls.
如第13A圖所示,支架730於其頂部(相對於與底側基板連接之一側)係形成一定位部732,供光學元件750容置其中並保持位置。在本實施例 中,定位部732係為一凹槽,凹槽具有一底部732C用以放置光學元件750,以及一向支架730下方漸縮之斜面732B連接底部732C。定位部732的輪廓係對應於並稍大於光學元件750,斜面732B與光學元件750之間的間隙732A中填有密封膠層736。斜面732B有利於將膠材(例如密封膠層736)充填於定位部732中,以密封封裝結構的內腔體740。 As shown in Figure 13A, a positioning portion 732 is formed on the top of the support 730 (opposite to the side connected to the bottom substrate) for receiving and maintaining the position of the optical element 750. In this embodiment, the positioning portion 732 is a recess having a bottom 732C for placing the optical element 750 and a slope 732B that tapers downwards from the support 730 connecting to the bottom 732C. The contour of the positioning portion 732 corresponds to and is slightly larger than the optical element 750, and a sealant layer 736 is filled in the gap 732A between the slope 732B and the optical element 750. The slope 732B facilitates filling the positioning portion 732 with adhesive material (e.g., sealant layer 736) to seal the inner cavity 740 of the encapsulation structure.
在一實施例中,如第13B圖所示,支架730的頂部除了定位部732之外,支架730的頂部還可進一步具有導槽734從底部732C向支架730下方延伸,以供填入導電膠(例如:銀膠、錫膏、異方導電膠等)。光學元件750即藉此導電結構760而與支架730內的電性導通結構(圖未示)電性連接。如第13B圖所示,在光學元件750置放於定位部732的底部732C後,光學元件750與定位部732的斜面732B之間形成的空隙732A係與填有導電膠的導槽734彼此隔離不相通。在本實施例中,光學元件750與斜面732B之間的間隙732A係供充填膠材,例如可視情況於其間充填透光膠,以於光學元件750和支架730之間形成密封膠層736,用以密封封裝結構的內腔體740。 In one embodiment, as shown in Figure 13B, in addition to the positioning portion 732, the top of the bracket 730 may further have a guide groove 734 extending from the bottom 732C downwards from the bracket 730 for filling with conductive adhesive (e.g., silver paste, solder paste, anisotropic conductive adhesive, etc.). The optical element 750 is electrically connected to the electrical conduction structure (not shown) within the bracket 730 via this conductive structure 760. As shown in Figure 13B, after the optical element 750 is placed at the bottom 732C of the positioning portion 732, the gap 732A formed between the optical element 750 and the inclined surface 732B of the positioning portion 732 is isolated from and does not communicate with the guide groove 734 filled with conductive adhesive. In this embodiment, the gap 732A between the optical element 750 and the inclined surface 732B is for filling with adhesive material, such as transparent adhesive, to form a sealing layer 736 between the optical element 750 and the support 730, thereby sealing the inner cavity 740 of the encapsulation structure.
可替代地,如第13C圖所示,導槽734與定位部732亦可設計為能夠在光學元件750置位之後形成一連通空間732D,在此實施例中,係僅施行一次充填,即使導電膠(例如銀膠)填入支架730的定位部732和導槽734中,形成導電結構760。 Alternatively, as shown in Figure 13C, the guide groove 734 and the positioning portion 732 can also be designed to form a connecting space 732D after the optical element 750 is positioned. In this embodiment, only one filling is performed, whereby conductive adhesive (e.g., silver paste) is filled into the positioning portion 732 and the guide groove 734 of the bracket 730 to form a conductive structure 760.
併參第14A圖,其係表示如第13A圖和第13B圖所示剖面結構之上視圖。在如第13A圖所示之支架730中,定位部732的形狀對應於光學元件750並稍大於光學元件750,光學元件750與定位部732的斜面732B之間形成一間隙732A,以供填入膠材形成密封膠層736。由第14A圖觀之,光學元件750係置位 於支架730的定位部732中,密封膠層736圍繞光學元件750的周圍以阻隔水氣及保護光學元件750。另外,在如第13B圖所示之支架730中,定位部732下方係形成導槽734。導槽734係供填入導電膠而形成導電結構760用。由第14A圖觀之,光學元件750係置位於支架730的定位部732,遮蔽了下方位於導槽734中的導電結構760,密封膠層736圍繞光學元件750的周圍以阻隔水氣及保護光學元件750。 Referring also to Figure 14A, which is a top view showing the cross-sectional structure as shown in Figures 13A and 13B, in the bracket 730 shown in Figure 13A, the shape of the positioning portion 732 corresponds to and is slightly larger than the optical element 750. A gap 732A is formed between the optical element 750 and the inclined surface 732B of the positioning portion 732 for filling with adhesive to form a sealing layer 736. As seen in Figure 14A, the optical element 750 is positioned in the positioning portion 732 of the bracket 730, and the sealing layer 736 surrounds the optical element 750 to block moisture and protect the optical element 750. Additionally, in the bracket 730 shown in Figure 13B, a guide groove 734 is formed below the positioning portion 732. The guide groove 734 is for filling with conductive adhesive to form a conductive structure 760. As shown in Figure 14A, the optical element 750 is positioned on the positioning portion 732 of the bracket 730, shielding the conductive structure 760 located below in the guide groove 734. A sealing layer 736 surrounds the optical element 750 to prevent moisture and protect it.
在本發明中,定位部732的大小與型態可因應實際應用而作調整,如第14B圖至第14D圖所示之其他支架設計的上視圖之示意說明。舉例而言,定位部732的寬度W係形成為使得光學元件750的兩側部在置放於定位部732時可直接抵鄰於支架730的其中兩個相對(如第14B圖所示),其中導電膠係填入光學元件750下方之導槽(未示),光學元件750未抵鄰支架側壁的部分與定位部732之間係填有透光膠而形成密封膠層736;或者,如第14C圖所示,定位部732的寬度W可形成為窄於光學元件750、且長度L長於光學元件750而未被光學元件750遮蔽以形成填膠空間C,供填入導電膠而形成導電結構760用。至於支架730的其餘結構設計則與前述實施例類似,於此不再贅述。 In this invention, the size and shape of the positioning part 732 can be adjusted according to the actual application, as illustrated in the top view of other bracket designs shown in Figures 14B to 14D. For example, the width W of the positioning portion 732 is formed such that when the two sides of the optical element 750 are placed in the positioning portion 732, they can directly abut against two opposite sides of the bracket 730 (as shown in Figure 14B). The conductive adhesive is filled into the guide groove (not shown) below the optical element 750. The portion of the optical element 750 that does not abut against the side wall of the bracket and the positioning portion 732 is filled with light-transmitting adhesive to form a sealing layer 736. Alternatively, as shown in Figure 14C, the width W of the positioning portion 732 can be formed to be narrower than the optical element 750 and longer than the optical element 750 so as not to be blocked by the optical element 750, thereby forming a filling space C for filling with conductive adhesive to form a conductive structure 760. The remaining structural design of the bracket 730 is similar to that of the aforementioned embodiment and will not be described in detail here.
此外,為進一步利於刷膠作業的進行、同時利於對支架形成不同形態的導電結構,亦可對支架進行各種導槽結構設計。第14D圖係顯示一未放置光學元件750的支架730的上視圖,支架730的頂部除形成有前述定位部732、導槽734等結構供填入導電膠外,在支架730的相對兩側部上亦可形成有深度略淺於導槽734之次導槽738。次導槽738連接導槽734與側壁730A,次導槽738之結構有利於導電膠填入導槽734的深處。 Furthermore, to further facilitate the adhesive application process and to create different conductive structures on the bracket, various guide groove structures can be designed for the bracket. Figure 14D shows a top view of a bracket 730 without the optical element 750. In addition to the aforementioned positioning part 732 and guide groove 734 for filling with conductive adhesive, secondary guide grooves 738, slightly shallower than the guide grooves 734, can also be formed on opposite sides of the bracket 730. The secondary guide grooves 738 connect the guide grooves 734 and the sidewall 730A, and their structure facilitates the filling of conductive adhesive into the depth of the guide grooves 734.
在本發明中,除以塑膠射出方式、或鑄模成形、3D列印等方式形成塑膠材質的支架包覆電性導通結構以供電性導通以外,亦可採用金屬支架,直接提供電性連接。惟需注意金屬支架上需設有斷開的介面,以區隔出正負極電性,金屬支架本身即具備可直接與底層基板上的導電層或金屬鍍層相連形成導通的金屬電性導通結構。 In this invention, besides using plastic injection molding, casting, 3D printing, or other methods to form a plastic support covering the electrical conductive structure for electrical conduction, a metal support can also be used to directly provide electrical connection. However, it is important to note that the metal support must have a disconnected interface to distinguish the positive and negative electrodes. The metal support itself possesses a conductive metal structure that can be directly connected to the conductive layer or metal plating layer on the underlying substrate to form a conductive connection.
基於前述,本發明提供了一種具有保護機制的雷射封裝結構、以及一種晶圓級封裝製程以製得此雷射封裝結構。藉由本發明,無須如習知雷射封裝結構中利用另設的光電二極體和外接電路等設計作為保護機制,而是在支撐光學元件的支架上成型包覆電性導通結構,利用此電性導通結構連接具電性的光學元件,藉此可大幅降低整個封裝結構或模組之體積,並可降低因外部線路斷線而導致模組失效的風險。此外,藉由晶圓級封裝製程的設計,亦可減少製造程序和成本。 Based on the foregoing, this invention provides a laser package structure with a protection mechanism and a wafer-level packaging process for fabricating this laser package structure. With this invention, instead of using separate photodiodes and external circuits as protection mechanisms as in conventional laser package structures, an electrically conductive structure is formed and coated on the support of the optical components. This electrically conductive structure is used to connect the electrically conductive optical components, thereby significantly reducing the overall size of the package structure or module and reducing the risk of module failure due to external circuit breakage. Furthermore, the wafer-level packaging process design also reduces manufacturing processes and costs.
除前述特徵外,在本發明中,更藉由支架上各種導槽結構的設計,提高刷膠品質和效率。特別是,在本發明中,可視情況以導電性或不導電性的膠材填滿封裝結構的光學元件四周和支架之間的空間,使封裝結構內腔體呈現密封的狀態,避免水氣滲入影響光學元件的功能。 In addition to the aforementioned features, this invention further improves the quality and efficiency of adhesive application through the design of various guide groove structures on the support. Specifically, in this invention, conductive or non-conductive adhesives can be used to fill the space around the optical components and between the support in the encapsulation structure, ensuring a sealed internal cavity and preventing moisture intrusion that could affect the function of the optical components.
在本發明之雷射封裝結構中,為隔開雷射晶片與光學元件所需之空氣層係可由預定高度的間隔件之設置而形成、或直接由預定厚度的封裝膠材之充填而形成,增加了封裝結構設計上的彈性。此外,利用鋼板刷膠方式填入導電膠,係可於刷膠時利用因壓力而溢出於預定空間中的導電膠(例如錫膏)作為後續表面焊接製程中供電極連接導通線路之結構,降低製程複雜度。 In the laser packaging structure of this invention, the air layer required to separate the laser chip and optical components can be formed by the placement of spacers of a predetermined height or directly by filling with packaging adhesive of a predetermined thickness, increasing the flexibility of the packaging structure design. Furthermore, the use of a stencil to apply conductive adhesive allows the conductive adhesive (e.g., solder paste) overflowing from a predetermined space due to pressure during application to serve as the conductor connection for the electrodes in subsequent surface mount technology (SMT) processes, reducing process complexity.
需注意的是,本發明所提之前述實施例係僅用於例示說明本發明,而非用於限制本發明之範圍。熟習本發明所屬領域技藝之人對本發明所進行之諸般修飾和變化皆不脫離本發明之精神與範疇。不同實施例中相同或相似的構件、或不同實施例中以相同元件符號表示的構件係具有相同的物理或化學特性。此外,在適當的情況下,本發明之上述實施例係可互相組合或替換,而非僅限於上文所描述的特定實施例。在一實施例中所描述的特定構件與其他構件的連接關係亦可應用於其他實施例中,其皆落於本發明如附申請專利範圍之範疇。 It should be noted that the aforementioned embodiments of this invention are merely illustrative and not intended to limit the scope of the invention. Various modifications and variations made to this invention by those skilled in the art to which it pertains do not depart from the spirit and scope of this invention. Identical or similar components in different embodiments, or components represented by the same element symbols in different embodiments, possess the same physical or chemical properties. Furthermore, where appropriate, the aforementioned embodiments of this invention can be combined or substituted with each other, and are not limited to the specific embodiments described above. The connection relationships between a specific component described in one embodiment and other components can also be applied to other embodiments, all of which fall within the scope of the appended patent claims.
70:封裝結構700:基板700A:表面702A、702B:第一電性導通柱704A、704B:第二電性導通柱710:雷射晶片730:支架740:內腔體742:電性導通結構750:光學元件760:導電結構70: Package structure; 700: Substrate; 700A: Surface; 702A, 702B: First electrical conductive pillars; 704A, 704B: Second electrical conductive pillars; 710: Laser chip; 730: Support; 740: Cavity; 742: Electrically conductive structure; 750: Optical element; 760: Conductive structure.
Claims (19)
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| WO2018174539A1 (en) | 2017-03-21 | 2018-09-27 | 엘지이노텍 주식회사 | Semiconductor element package and autofocusing device |
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| WO2018174539A1 (en) | 2017-03-21 | 2018-09-27 | 엘지이노텍 주식회사 | Semiconductor element package and autofocusing device |
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