TWI903800B - Ring structures and systems for use in a plasma chamber - Google Patents
Ring structures and systems for use in a plasma chamberInfo
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Abstract
Description
本發明實施例係關於用於固定電漿腔室中的環之環、系統、方法、及結構。This invention relates to a ring, system, method, and structure for use in fixing a plasma chamber.
電漿腔室係用以在晶圓上執行諸多製程。舉例而言,電漿腔室係用於清潔晶圓、在晶圓上沉積材料、或蝕刻晶圓。電漿腔室包含諸如各種環的諸多元件,其係用於處理晶圓的不同部分。Plasma chambers are used to perform various processes on wafers. For example, plasma chambers are used to clean wafers, deposit materials on wafers, or etch wafers. Plasma chambers contain many components, such as various rings, which are used to process different parts of the wafer.
本揭示內容中描述的實施例係於本文中提出。The embodiments described in this disclosure are presented herein.
在所描述的實施例中,電漿腔室係設有邊緣環及支撐環。在一實施例中,邊緣環係耦接至設置在邊緣環下方的支撐環。該邊緣環係例如藉由附接至邊緣環之底側的複數螺釘耦接至支撐環。為了固定支撐環,複數下拉結構耦接至支撐環的底側,該複數下拉結構下拉以在處理期間使邊緣環保持固定。若邊緣環在處理期間係非正確地加以固定,則用以固定邊緣環的黏著劑並不足夠。僅有黏著劑並不足夠的一個原因係由於電漿腔室內的高溫循環,所以由支撐環與邊緣環之間形成的黏著膠體提供的黏著力降低。此外,有恆定力施加至膠體,因此膠體可能隨時間崩解。因此,期望即使在由膠體提供的黏著力降低及/或膠體崩解時,邊緣環及支撐環在基板的處理期間仍保持在原位置。舉例而言,期望在基板的處理期間邊緣環相對於支撐環係固定的。否則,在基板的處理期間之邊緣環的任何位移都可能導致在基板上執行不期望的製程、或基板的某些不期望被處理之部分受到處理。在一實施例中,邊緣環的底表面具有用於接收多個緊固件的槽,例如螺釘孔,以在基板的處理期間將邊緣環連接至支撐環。此有助於防止邊緣環相對於支撐環運動。In the described embodiment, the plasma chamber is provided with an edge ring and a support ring. In one embodiment, the edge ring is coupled to a support ring disposed below the edge ring. The edge ring is coupled to the support ring, for example, by a plurality of screws attached to the bottom side of the edge ring. To secure the support ring, a plurality of pull-down structures are coupled to the bottom side of the support ring, which pull down to keep the edge ring fixed during processing. If the edge ring is not properly secured during processing, the adhesive used to secure the edge ring is insufficient. One reason why adhesive alone is insufficient is that the high-temperature cycling within the plasma chamber reduces the adhesive force provided by the adhesive compound formed between the support ring and the edge ring. Furthermore, a constant force is applied to the compound, which may disintegrate over time. Therefore, it is desirable for the edge ring and support ring to remain in their original positions during substrate processing, even with reduced adhesive force and/or compound disintegration. For example, it is desirable for the edge ring to be fixed relative to the support ring during substrate processing. Otherwise, any displacement of the edge ring during substrate processing could lead to undesirable processes being performed on the substrate, or undesirable portions of the substrate being processed. In one embodiment, the bottom surface of the edge ring has slots, such as screw holes, for receiving multiple fasteners to connect the edge ring to the support ring during substrate processing. This helps prevent movement of the edge ring relative to the support ring.
在一實施例中,期望邊緣環具有一或更多彎曲的邊緣,以在電漿形成於電漿腔室內時減少電弧放電(arcing)的可能性。In one embodiment, it is desirable for the edge ring to have one or more curved edges to reduce the likelihood of arcing when plasma is formed in the plasma chamber.
在另一實施例中,期望設置蓋環以圍繞邊緣環。蓋環係進一步配置成具有一或更多彎曲的邊緣,以在電漿形成於電漿腔室內時減少電弧放電的可能性。此外,蓋環的寬度係選擇成使得沿該寬度的追踪距離有助於在蓋環之垂直定向的內表面處達成隔絕電壓(stand-off voltage)。舉例而言,若射頻(RF)電壓在蓋環內耗散的範圍從每千分之一英吋的蓋環約7伏特(V)(含)至10伏特的電壓,則在蓋環之垂直定向的內表面處達成預定之5000伏特(V)的隔絕電壓,該蓋環的寬度對應於追踪距離。追踪距離係隔絕電壓之倍數(諸如二或三)及蓋環之每單位長度(諸如千分之一英寸)內電壓耗散的比率。在一些實施例中,蓋環的寬度係由該比率提供的追踪距離。在另一實施例中,邊緣環與接地之間的表面長度(例如沿幾個階梯式表面)界定追踪距離。In another embodiment, it is desirable to provide a cover ring to surround an edge ring. The cover ring is further configured to have one or more curved edges to reduce the possibility of arcing when plasma is formed within the plasma chamber. Furthermore, the width of the cover ring is chosen such that the tracking distance along that width helps to achieve a stand-off voltage at the vertically oriented inner surface of the cover ring. For example, if the RF voltage dissipates within the cover ring in the range of approximately 7 volts (inclusive) to 10 volts per thousandth of an inch of cover ring, then a predetermined isolation voltage of 5000 volts (V) is achieved at the vertically oriented inner surface of the cover ring, the width of which corresponds to the tracking distance. The tracking distance is a multiple (such as two or three) of the isolation voltage and a ratio of voltage dissipation per unit length (such as one-thousandth of an inch) of the cover ring. In some embodiments, the width of the cover ring is the tracking distance provided by this ratio. In another embodiment, the surface length between the edge ring and the ground (e.g., along several stepped surfaces) defines the tracking distance.
在一實施例中,期望支撐環及邊緣環相對於位在支撐環下方的絕緣體環係固定的。否則,支撐環相對於絕緣體環的任何力矩皆使支撐環之頂部上的邊緣環運動。邊緣環的運動在基板的處理期間係不期望的。在基板的處理期間之支撐環的任何位移都可能導致在基板上執行不期望的製程、或基板的某些不期望被處理之部分受到處理。此外,為了支撐環或邊緣環或邊緣環和支撐環兩者的維修或更換,期望支撐環和邊緣環容易地被移除。In one embodiment, it is desirable that the support ring and the edge ring be fixed relative to the insulator ring located below the support ring. Otherwise, any torque on the support ring relative to the insulator ring would cause movement of the edge ring on top of the support ring. Movement of the edge ring is undesirable during substrate processing. Any displacement of the support ring during substrate processing could lead to undesirable processes being performed on the substrate, or undesirable portions of the substrate being processed. Furthermore, for maintenance or replacement of the support ring or the edge ring, or both the edge ring and the support ring, it is desirable that the support ring and the edge ring be easily removed.
在一些實施例中,描述一種用於電漿處理腔室的邊緣環。該邊緣環具有圍繞電漿處理腔室之基板支座的環形體。該環形體具有底側、頂側、內側、及外側。該邊緣環具有沿底側配置在環形體內的複數緊固件孔。各緊固件孔具有用於容納緊固件之螺紋的內表面,該緊固件用於將環形體附接至支撐環。該邊緣環更包含配置在環形體之內側的台階。該台階具有藉由呈角度的表面而與頂側之上表面分開的下表面。該邊緣環具有形成於頂側之上表面與外側之側表面的彎曲邊緣。In some embodiments, an edge ring for a plasma processing chamber is described. The edge ring has an annular shape surrounding a substrate support of the plasma processing chamber. The annular shape has a bottom side, a top side, an inner side, and an outer side. The edge ring has a plurality of fastener holes disposed along the bottom side within the annular shape. Each fastener hole has an inner surface for receiving the threads of a fastener used to attach the annular shape to a support ring. The edge ring further includes a step disposed on the inner side of the annular shape. The step has a lower surface separated from the upper surface of the top side by an angled surface. The edge ring has curved edges formed on the top surface and the outer side surface.
在幾個實施例中,描述一種用於電漿處理腔室的蓋環。該蓋環具有圍繞邊緣環且毗鄰接地環的環形體。該環形體具有上主體部分、中間主體部分、及下主體部分。該中間主體部分自上主體部分界定階梯式縮減部,使得中間主體部分具有第一環形寬度。該下主體部分自中間主體部分界定階梯式縮減部,使得下主體部分具有小於該第一環形寬度的第二環形寬度。In several embodiments, a cover ring for a plasma processing chamber is described. The cover ring has an annular shape surrounding an edge ring and adjacent to a ground ring. The annular shape has an upper main body portion, a middle main body portion, and a lower main body portion. The middle main body portion defines a stepped reduction portion from the upper main body portion, such that the middle main body portion has a first annular width. The lower main body portion defines a stepped reduction portion from the middle main body portion, such that the lower main body portion has a second annular width smaller than the first annular width.
在諸多實施例中,描述一種用於固定電漿腔室之邊緣環的系統。該系統包含邊緣環定向在其上方的支撐環。該系統更包含配置在邊緣環的底表面與支撐環的頂表面之間的膠體層。該系統亦包含配置成將邊緣環固定至支撐環的複數螺釘。複數螺釘的其中各者係附接至配置在邊緣環的底表面內且穿過該支撐環的螺釘孔。該系統亦包含連接至該支撐環的底表面之複數壓緊桿。該系統包含複數氣動活塞。該複數氣動活塞的其中各者係耦接至複數壓緊桿之個別者。Among various embodiments, a system for securing a perimeter ring of a plasma chamber is described. The system includes a support ring with the perimeter ring oriented above it. The system further includes a colloidal layer disposed between a bottom surface of the perimeter ring and a top surface of the support ring. The system also includes a plurality of screws configured to secure the perimeter ring to the support ring. Each of the plurality of screws is attached to a screw hole disposed within the bottom surface of the perimeter ring and passing through the support ring. The system also includes a plurality of clamping rods connected to the bottom surface of the support ring. The system includes a plurality of pneumatic pistons. Each of the plurality of pneumatic pistons is coupled to an individual of the plurality of clamping rods.
本文描述之系統及方法的一些優點包含提供具有一或更多非尖銳之彎曲邊緣的邊緣環。當電漿在電漿腔室內形成時,尖銳的邊緣(諸如具有90°角的邊緣)通常負責RF功率的電弧放電。一或更多彎曲的邊緣減少如此電弧放電的可能性。Some advantages of the systems and methods described herein include providing edge rings with one or more non-sharp, curved edges. When plasma is formed within a plasma chamber, sharp edges (such as edges with a 90° angle) typically handle the arcing of RF power. One or more curved edges reduce the likelihood of such arcing.
該系統及方法之進一步的優點包含使邊緣環設有諸如螺釘孔的一或更多槽,用於接收諸如螺釘的緊固件以供將邊緣環耦接至支撐環。即使當邊緣環與支撐環間之膠體提供的黏著力降低或膠體耗損或膠體因在基板的處理期施加至膠體的力而崩解時,邊緣環及支撐環的耦合使邊緣環相對於支撐環固定。此外,支撐環藉由一或更多壓緊桿相對於絕緣體環加以固定。因此,邊緣環藉由支撐環相對於絕緣體環係固定的,且因此在基板的處理期間邊緣環無法位移。如此的位移欠缺減少(諸如避免)在基板上執行任何不期望的製程之可能性、或減少基板之不期望的區域受到處理之可能性。A further advantage of the system and method is that the edge ring has one or more grooves, such as screw holes, for receiving fasteners, such as screws, for coupling the edge ring to the support ring. Even when the adhesive force provided by the adhesive between the edge ring and the support ring decreases, or the adhesive is consumed, or the adhesive breaks down due to forces applied to the adhesive during substrate processing, the coupling of the edge ring and the support ring fixes the edge ring relative to the support ring. Furthermore, the support ring is secured relative to the insulator ring by one or more clamping rods. Therefore, the edge ring is fixed relative to the insulator ring by the support ring, and thus the edge ring cannot be displaced during substrate processing. Such displacement lacks the ability to reduce (e.g., avoid) the possibility of performing any undesirable processes on the substrate, or to reduce the possibility of undesirable areas of the substrate being processed.
該系統及方法的額外優點包含設置一或更多機構,諸如一或更多氣動機構,用於藉由一或更多壓緊桿下拉或上推支撐環。在基板的處理期間執行下拉,以減少支撐環相對於絕緣體環位移的可能性。因此,由於下拉,邊緣環及支撐環在多個處理操作期間(諸如從處理操作至另一者)在電漿腔室內保持固定,直到被更換或從電漿腔室移除以供維修。執行上推以移除邊緣環或支撐環以供更換或維修,諸如清潔。Additional advantages of this system and method include the provision of one or more mechanisms, such as one or more pneumatic mechanisms, for pulling down or pushing up the support ring by one or more clamping rods. Pulling down is performed during substrate processing to reduce the possibility of displacement of the support ring relative to the insulator ring. Therefore, due to the pull down, the edge ring and support ring remain fixed within the plasma chamber during multiple processing operations (e.g., from one processing operation to another) until they are replaced or removed from the plasma chamber for maintenance. Pushing up is performed to remove the edge ring or support ring for replacement or maintenance, such as cleaning.
本文描述之系統及方法的其他優點包含使蓋環設有一或更多彎曲的邊緣,以在電漿形成於電漿腔室內時減少電弧放電的可能性。此外,蓋環具有環形寬度,以如上所述在蓋環之垂直定向的內表面處達成隔絕電壓。Other advantages of the system and method described herein include providing the cover ring with one or more curved edges to reduce the possibility of arcing during plasma formation within the plasma chamber. Furthermore, the cover ring has an annular width to achieve voltage isolation at the vertically oriented inner surface of the cover ring, as described above.
其他實施態樣將從以下詳細說明結合隨附圖式而變得顯而易見。Other implementations will become apparent from the following detailed descriptions in conjunction with the accompanying diagrams.
以下實施例描述用於固定電漿腔室內之邊緣環的系統及方法。顯然地,本發明實施例可以不具有某些或全部這些具體細節而實施。另一方面,未詳細說明眾所周知的製程操作,以免不必要地混淆本發明實施例。The following embodiments describe a system and method for fixing an edge ring within a plasma chamber. Obviously, the embodiments of the invention may be implemented without some or all of these specific details. Furthermore, well-known process operations are not described in detail to avoid unnecessarily obscuring the embodiments of the invention.
圖1是系統100之實施例的圖,以說明將邊緣環108固定至支撐環112的方式,該支撐環112在本文有時被稱為可調邊緣鞘(TES)環。系統100包含邊緣環108、接地環114、基環116(如下面圖9G所示)、絕緣體環106、蓋環118(如下面圖9G所示)、及卡盤104。邊緣環108係由導電材料製成,諸如矽、硼摻雜的單晶矽、氧化鋁、矽碳化物、或氧化鋁層頂部上的矽碳化物層、或矽的合金、或其組合。應注意邊緣環108具有環形體,諸如圓形體、或環形體、或盤形體。此外,支撐環112係由介電材料製成,諸如石英、或陶瓷、或氧化鋁(Al 2O 3)、或聚合物。作為示例,支撐環112具有約12.5英吋的內直徑、約13.5英吋的外直徑、及沿y軸之約0.5英吋的厚度。為了說明,支撐環112具有範圍從約12.7英吋(含)至約13英吋的內直徑、從約13.3英吋(含)至約14英吋的外直徑、及從約0.5英吋(含)至約0.7英吋的厚度。此只是用於處理300毫米晶圓之電漿腔室的示例尺寸。 Figure 1 is a diagram of an embodiment of system 100 illustrating the manner in which an edge ring 108 is secured to a support ring 112, which is sometimes referred to herein as an adjustable edge sheath (TES) ring. System 100 includes an edge ring 108, a grounding ring 114, a base ring 116 (as shown in Figure 9G below), an insulator ring 106, a cover ring 118 (as shown in Figure 9G below), and a chuck 104. The edge ring 108 is made of a conductive material, such as silicon, boron-doped single-crystal silicon, alumina, silicon carbide, or a silicon carbide layer on top of an alumina layer, or an alloy of silicon, or a combination thereof. It should be noted that the edge ring 108 has a toroidal shape, such as a circle, a ring, or a disc. Furthermore, the support ring 112 is made of a dielectric material, such as quartz, ceramic, alumina ( Al₂O₃ ), or a polymer. For example, the support ring 112 has an inner diameter of approximately 12.5 inches, an outer diameter of approximately 13.5 inches, and a thickness of approximately 0.5 inches along the y-axis. For illustration, the support ring 112 has an inner diameter ranging from approximately 12.7 inches (inclusive) to approximately 13 inches, an outer diameter ranging from approximately 13.3 inches (inclusive) to approximately 14 inches, and a thickness ranging from approximately 0.5 inches (inclusive) to approximately 0.7 inches. This is just an example size for the plasma chamber used to process a 300mm wafer.
此外,絕緣體環106係由諸如介電材料的絕緣體材料製成,且基環116係亦由介電材料製成。接地環114係由導電材料製成。接地環114係耦接至接地電位。卡盤104的示例包含靜電卡盤。諸如邊緣環108、支撐環112、接地環114、基環116、及絕緣體環106的各環具有環形形狀,諸如環形或盤形。蓋環118係由諸如熔融矽石石英的介電材料、或諸如鋁氧化物(Al 2O 3)或釔氧化物(Y 2O 3)的陶瓷材料製成。蓋環118具有環形體,諸如盤形或環形的環形體。 Furthermore, the insulator ring 106 is made of an insulating material such as a dielectric material, and the base ring 116 is also made of a dielectric material. The grounding ring 114 is made of a conductive material. The grounding ring 114 is coupled to a grounding potential. Examples of the chuck 104 include an electrostatic chuck. Each ring, such as the edge ring 108, the support ring 112, the grounding ring 114, the base ring 116, and the insulator ring 106, has a ring shape, such as a ring or a disc. The cap ring 118 is made of a dielectric material such as fused silica or a ceramic material such as aluminum oxide ( Al₂O₃ ) or yttrium oxide ( Y₂O₃ ). The cap ring 118 has a ring shape, such as a disc or ring shape.
邊緣環108的底表面具有藉由導熱膠體層110A耦接至支撐環112上表面的部分P1,以使支撐環112的熱散至邊緣環108。如本文使用之導熱膠體的示例包含聚醯亞胺、聚酮、聚醚酮、聚醚碸、聚對苯二甲酸乙二酯、氟化乙烯-丙烯共聚物、纖維素、三乙酸酯(triacetates)、及矽氧樹脂(silicone)。再者,邊緣環108的底表面具有藉由導熱膠體層110B耦接至卡盤104上表面的另一部分P2。此外,邊緣環108的底表面尚具有位在基環116上方且毗鄰基環116的另一部分P3。The bottom surface of the edge ring 108 has a portion P1 coupled to the upper surface of the support ring 112 via a thermally conductive adhesive layer 110A, so that heat from the support ring 112 is dissipated to the edge ring 108. Examples of thermally conductive adhesives used herein include polyimide, polyketone, polyetherketone, polyether ether, polyethylene terephthalate, fluorinated ethylene-propylene copolymer, cellulose, triacetates, and silicone. Furthermore, the bottom surface of the edge ring 108 has another portion P2 coupled to the upper surface of the chuck 104 via a thermally conductive adhesive layer 110B. In addition, the bottom surface of the edge ring 108 also has another part P3 located above and adjacent to the base ring 116.
邊緣環108係位在基環116、支撐環112、及卡盤104上方。邊緣環108的底表面面向基環116、支撐環112、及卡盤104的一部分。邊緣環108亦圍繞卡盤104的一部分,諸如頂部部分PRTN1。支撐環112圍繞卡盤104的一部分,且絕緣體環106圍繞卡盤104的另一部分。基環116圍繞絕緣體環106的一部分及支撐環112。蓋環118圍繞邊緣環108及基環116。接地環114圍繞蓋環118的一部分及基環116。蓋環118的一部分係位在接地環114上方且蓋環118係毗鄰接地環114的側部配置。Edge ring 108 is located above base ring 116, support ring 112, and chuck 104. The bottom surface of edge ring 108 faces a portion of base ring 116, support ring 112, and chuck 104. Edge ring 108 also surrounds a portion of chuck 104, such as the top portion PRTN1. Support ring 112 surrounds a portion of chuck 104, and insulator ring 106 surrounds another portion of chuck 104. Base ring 116 surrounds a portion of insulator ring 106 and support ring 112. A cover ring 118 surrounds an edge ring 108 and a base ring 116. A grounding ring 114 surrounds a portion of the cover ring 118 and the base ring 116. A portion of the cover ring 118 is located above the grounding ring 114 and is arranged to the side adjacent to the grounding ring 114.
邊緣環108具有多個邊緣,諸如邊緣1、邊緣2、邊緣3、邊緣4、邊緣5、及邊緣6。邊緣1至6各者係彎曲的,諸如弧形的。為了說明,邊緣1至6各者沒有銳角、具有半徑、及具有平滑的曲線。應注意在諸多實施例中,邊緣1至6各者的半徑係大於從約0.01英吋(含)至約0.03英吋的範圍。從約0.01英吋(含)至約0.03英吋之邊緣的半徑減少在半導體晶圓的製造期間之邊緣碎裂的可能性。碎裂在半導體晶圓的處理期間產生顆粒。Edge ring 108 has multiple edges, such as edge 1, edge 2, edge 3, edge 4, edge 5, and edge 6. Edges 1 to 6 are curved, such as arc-shaped. For illustration, edges 1 to 6 have no sharp angles, have radii, and have smooth curves. It should be noted that in many embodiments, the radii of edges 1 to 6 are greater than the range of about 0.01 inches (inclusive) to about 0.03 inches. An edge radius of about 0.01 inches (inclusive) to about 0.03 inches reduces the possibility of edge breakage during semiconductor wafer fabrication. Fragmentation occurs during the processing of semiconductor wafers, producing particles.
在一實施例中,邊緣環108具有複數邊緣。在一實施例中,界定邊緣環108的邊緣係加以圓化。舉例而言,邊緣環108的邊緣1係圓化成約0.03英吋或更大且較佳是大於0.07英吋的半徑。為了說明,將邊緣1圓化成具有範圍從約0.03英吋(含)至約0.1英吋的半徑。作為另一示例,將邊緣1圓化成具有範圍從約0.07英吋(含)至約0.1英吋的半徑。由於邊緣環108的邊緣1靠近接地環114,所以邊緣環108的邊緣1係特別容易電弧放電(arcing)。由於在電漿處理操作中使用的功率位準增加,高電場將在邊緣環108與接地環114之間產生。邊緣1的圓化減少如此電弧放電的可能性。已確定當電漿腔室在操作中時,這些邊緣的較低圓化程度可能不足以防止或減少RF功率之電弧放電的可能性。受電漿腔室內較尖銳之特徵部邊緣所影響,電弧放電之可能性的減少可能對在半導體晶圓上及上方執行的製造製程有害。輕微的邊緣圓化(例如範圍從約0.01英吋(含)至約0.03英吋的邊緣1),有助於減少半導體晶圓的製造期間之顆粒產生、或製造期間邊緣碎裂的可能性。因此,儘管在配置於電漿腔室內之特徵部(例如邊緣1)的表面上執行一些圓化,有鑑於電漿處理操作中所使用之增加的功率位準,此圓化程度係小於用於防止或減少電弧放電的圓化程度。In one embodiment, the edge ring 108 has a plurality of edges. In one embodiment, the edges defining the edge ring 108 are rounded. For example, edge 1 of the edge ring 108 is rounded to a radius of about 0.03 inches or greater, preferably greater than 0.07 inches. For illustration, edge 1 is rounded to have a radius ranging from about 0.03 inches (inclusive) to about 0.1 inches. As another example, edge 1 is rounded to have a radius ranging from about 0.07 inches (inclusive) to about 0.1 inches. Because edge 1 of edge ring 108 is close to ground ring 114, edge 1 of edge ring 108 is particularly prone to arcing. Due to the increased power level used in plasma processing operations, a high electric field will be generated between edge ring 108 and ground ring 114. Rounding edge 1 reduces the likelihood of such arcing. It has been determined that when the plasma chamber is in operation, a lower degree of rounding of these edges may not be sufficient to prevent or reduce the likelihood of arcing at RF power. The reduced likelihood of arcing due to the sharper feature edges within the plasma chamber may be detrimental to manufacturing processes performed on and above the semiconductor wafer. Slight edge rounding (e.g., edge 1 ranging from about 0.01 inches to about 0.03 inches) helps reduce the likelihood of grain generation or edge fragmentation during semiconductor wafer fabrication. Therefore, although some rounding is performed on the surface of the feature (e.g., edge 1) disposed within the plasma chamber, given the increased power level used in the plasma processing operation, this degree of rounding is less than that used to prevent or reduce arc discharge.
當電漿形成於系統100所位在的電漿腔室內時,彎曲的邊緣1至6減少碎裂或電弧放電的可能性。應注意與邊緣1相比,邊緣5係較不受圓化以減少電漿的電漿離子進入邊緣5與卡盤104間之間隙內的可能性。舉例而言,邊緣5的半徑係低於邊緣1的半徑。作為示例,邊緣環108具有沿x軸之範圍從約13.6英吋(含)至約15英吋的外直徑。作為另一示例,邊緣環108具有範圍從約13英吋(含)至約15英吋的外直徑。作為又另一示例,邊緣環108具有沿y軸測量之約0.248英吋的厚度。為了說明,邊緣環108的厚度之範圍從約0.24英吋(含)至約0.256英吋。x軸係垂直於y軸。隨著邊緣環108的外直徑增大,鄰接邊緣環108之邊緣1的外側表面與蓋環118之間的距離減小。當電漿形成於電漿腔室內時,距離的減少使邊緣環108與蓋環118間之RF功率之電弧放電的可能性減小。When plasma is formed within the plasma chamber where system 100 is located, the curved edges 1 to 6 reduce the possibility of fragmentation or arcing. It should be noted that edge 5 is less rounded than edge 1 to reduce the possibility of plasma ions entering the gap between edge 5 and chuck 104. For example, the radius of edge 5 is smaller than the radius of edge 1. As an example, edge ring 108 has an outer diameter ranging from approximately 13.6 inches (inclusive) to approximately 15 inches along the x-axis. As another example, edge ring 108 has an outer diameter ranging from approximately 13 inches (inclusive) to approximately 15 inches. As another example, the edge ring 108 has a thickness of approximately 0.248 inches measured along the y-axis. For illustration, the thickness of the edge ring 108 ranges from approximately 0.24 inches (inclusive) to approximately 0.256 inches. The x-axis is perpendicular to the y-axis. As the outer diameter of the edge ring 108 increases, the distance between the outer surface of the edge 1 adjacent to the edge ring 108 and the cover ring 118 decreases. When plasma is formed within the plasma chamber, the reduced distance decreases the likelihood of arcing of RF power between the edge ring 108 and the cover ring 118.
邊緣環108包含在邊緣環108的底表面內形成的多個槽,諸如槽125。邊緣環內之槽的例子係螺釘孔。每一槽圍繞一緊固件孔,諸如緊固件孔124A。緊固件孔不完全沿y軸、沿著邊緣環108的長度延伸,以在邊緣環108內形成通孔。多個緊固件孔係在邊緣環108的底表面內形成。緊固件孔的示例係具有用於容納螺釘之螺旋螺紋的螺釘孔。槽125具有頂表面TS及側表面SS。頂表面TS及側表面SS係藉由鑽入至邊緣環108之底表面而形成的表面。側表面SS係實質垂直於頂表面TS。舉例而言,側表面SS係相對於頂表面TS呈一角度,諸如形成範圍在85度與95度之間的角度。作為另一示例,側表面SS係垂直於頂表面TS。頂表面TS部分地包圍緊固件孔124A且側表面SS部分地包圍緊固件孔124A。The edge ring 108 includes multiple grooves, such as groove 125, formed within its bottom surface. An example of a groove within the edge ring is a screw hole. Each groove surrounds a fastener hole, such as fastener hole 124A. The fastener hole does not extend entirely along the y-axis but along the length of the edge ring 108 to form a through-hole within the edge ring 108. Multiple fastener holes are formed within the bottom surface of the edge ring 108. An example of a fastener hole is a screw hole with helical threads for receiving a screw. Groove 125 has a top surface TS and a side surface SS. The top surface TS and the side surface SS are surfaces formed by drilling into the bottom surface of the edge ring 108. The side surface SS is substantially perpendicular to the top surface TS. For example, the side surface SS forms an angle with respect to the top surface TS, such as an angle between 85 degrees and 95 degrees. As another example, the side surface SS is perpendicular to the top surface TS. The top surface TS partially surrounds the fastener hole 124A, and the side surface SS partially surrounds the fastener hole 124A.
此外,通孔132A係在支撐環112內形成以用於接收緊固件122,諸如螺釘或螺栓或銷。類似地,諸如通孔132A之額外的通孔係在支撐環112內的其他位置形成,以容納如本文所述用於將支撐環112耦接至邊緣環的多個緊固件,諸如緊固件122。舉例而言,三個通孔係在支撐環112內在沿x軸之水平面中之等邊三角形的頂點處形成。作為另一例子,六或九個通孔係在支撐環112內形成,而在一組相鄰的通孔之間的距離係實質等於(諸如等於或在預定限度內)另一組相鄰的通孔之間的距離。應注意該組相鄰的通孔具有至少一通孔不同於另一組相鄰的通孔之其中至少一者。Furthermore, through-hole 132A is formed within the support ring 112 to receive fasteners 122, such as screws, bolts, or pins. Similarly, additional through-holes, such as through-hole 132A, are formed at other locations within the support ring 112 to accommodate multiple fasteners, such as fasteners 122, as described herein for coupling the support ring 112 to the edge ring. For example, three through-holes are formed within the support ring 112 at the vertices of an equilateral triangle in a horizontal plane along the x-axis. As another example, six or nine through holes are formed within the support ring 112, and the distance between one set of adjacent through holes is substantially equal to (e.g., equal to or within predetermined limits) the distance between another set of adjacent through holes. It should be noted that the set of adjacent through holes has at least one through hole that is different from at least one of the other sets of adjacent through holes.
緊固件122係由諸如鋼、鋁、鋼的合金、或鋁的合金之金屬製成。通孔132A係形成為與緊固件122的形狀一致。舉例而言,緊固件122具有直徑大於緊固件122之主體的頭部。通孔132A的下部係製造成具有與緊固件122的頭部相比稍大(諸如幾分之一毫米(mm))的直徑。再者,通孔132A的上部係製造成具有與緊固件122的主體相比稍大(諸如幾分之一毫米)的直徑。此外,與緊固件122的螺紋部分相比,緊固件孔124A的直徑係製造成稍大,諸如幾分之一毫米。此外,空間係沿y軸在槽125的頂表面TS與緊固件122的尖端之間形成。空間的示例係範圍從約0 mm(含)至約1 mm的間隙1。間隙1的另一示例係範圍從約0 mm(含)至約0.5 mm的空間。間隙1的又一示例係範圍從約0 mm(含)至約0.25 mm的空間。間隙1的空間係在沿y軸的垂直方向上。槽125的頂表面TS與緊固件122的螺紋部分間的空間之範圍從約0 mm(含)至約0.5 mm,以減少空間內RF功率之電弧放電的可能性。若電弧放電發生,則緊固件122可能由於電弧放電產生的熱而熔化。Fastener 122 is made of a metal such as steel, aluminum, an alloy of steel, or an alloy of aluminum. Through hole 132A is formed to conform to the shape of fastener 122. For example, fastener 122 has a head portion with a diameter larger than the body of fastener 122. The lower portion of through hole 132A is formed to have a diameter slightly larger (e.g., a fraction of a millimeter) than the head portion of fastener 122. Furthermore, the upper portion of through hole 132A is formed to have a diameter slightly larger (e.g., a fraction of a millimeter) than the body of fastener 122. Additionally, the diameter of fastener hole 124A is slightly larger (e.g., a fraction of a millimeter) than the threaded portion of fastener 122. Furthermore, a space is formed along the y-axis between the top surface TS of the slot 125 and the tip of the fastener 122. An example of this space is a gap 1 ranging from approximately 0 mm (inclusive) to approximately 1 mm. Another example of gap 1 is a space ranging from approximately 0 mm (inclusive) to approximately 0.5 mm. Yet another example of gap 1 is a space ranging from approximately 0 mm (inclusive) to approximately 0.25 mm. The space of gap 1 is in the vertical direction along the y-axis. The space between the top surface TS of the slot 125 and the threaded portion of the fastener 122 ranges from approximately 0 mm (inclusive) to approximately 0.5 mm to reduce the possibility of arcing of RF power within the space. If arcing occurs, the fastener 122 may melt due to the heat generated by the arcing.
緊固件122係插入通孔132A內,使得緊固件122的頭部及主體係位在支撐環112內,而緊固件122的螺紋部分係插入至在邊緣環108內形成的緊固件孔124A。在緊固件122的側表面與支撐環112的內側表面之間形成的空間(諸如間隙2)之範圍從約0 mm(含)至約0.2 mm。Fastener 122 is inserted into through hole 132A, such that the head and body of fastener 122 are located within support ring 112, and the threaded portion of fastener 122 is inserted into fastener hole 124A formed within edge ring 108. The space (such as gap 2) formed between the side surface of fastener 122 and the inner surface of support ring 112 ranges from about 0 mm (inclusive) to about 0.2 mm.
支撐環112具有嵌入其中的電極EL,用於接收經由輔助匹配(諸如阻抗匹配電路)自輔助RF產生器接收之RF訊號的射頻(RF)功率。The support ring 112 has an embedded electrode EL for receiving radio frequency (RF) power from an RF signal received by an auxiliary RF generator via an auxiliary matching circuit (such as an impedance matching circuit).
在一些實施例中,支撐環112係耦合環。In some embodiments, the support ring 112 is a coupling ring.
在諸多實施例中,緊固件122係由塑膠製成。In many embodiments, fastener 122 is made of plastic.
在一些實施例中,取代傳導膠體層,使用在其兩側皆具有傳導膠體的雙面傳導帶。在諸多實施例中,取代傳導膠體層,使用具有傳導膠體的填隙珠。In some embodiments, a double-sided conductive strip with conductive gel on both sides is used instead of a conductive gel layer. In many embodiments, interstitial beads with conductive gel are used instead of a conductive gel layer.
在一些實施例中,取代具有多個螺紋的緊固件孔,此處描述之在邊緣環之底表面內的緊固件孔裝配有插入件,諸如金屬套管。為了說明,金屬套管係旋緊至在邊緣環的底表面內形成的槽。插入件在其內表面內具有螺紋。緊固件係接著旋緊至插入件的螺紋而非旋緊至具有螺紋的緊固件孔。In some embodiments, instead of fastener holes with multiple threads, the fastener holes described herein, located within the bottom surface of the edge ring, are fitted with inserts, such as metal sleeves. For illustration, the metal sleeve is screwed into a groove formed within the bottom surface of the edge ring. The insert has threads on its inner surface. The fastener is then screwed into the threads of the insert, rather than into the threaded fastener hole.
圖2是系統200之實施例的圖,以說明功率銷208對支撐環112的耦合。系統200包含邊緣環228、蓋環201、接地環114、絕緣體環106、基環210、設備板224、卡盤104、支撐環112、缽狀體218、及絕緣體壁230。絕緣體壁230如本文描述係電漿腔室之偏壓外罩的壁。絕緣體環106相對於絕緣體壁230係固定的,諸如非可運動的。接地環114係未塗佈的。邊緣環228在本文有時被稱為熱邊緣環(HER)。邊緣環228係由與圖1邊緣環108相同的材料製成,除了邊緣環228具有與邊緣環108不同的形狀。作為示例,邊緣環228具有沿x軸之範圍從約13.6英吋(含)至約15英吋的外直徑。作為另一示例,邊緣環228具有範圍從約13英吋(含)至約15英吋的外直徑。作為又另一示例,邊緣環228具有沿y軸測量之約0.248英吋的厚度。為了說明,邊緣環228之厚度的範圍從約0.24英吋(含)至約0.256英吋。圖1的多個緊固件孔(諸如緊固件孔124A)係在邊緣環228內形成以將邊緣環228固定至支撐環112。Figure 2 is a diagram of an embodiment of system 200 illustrating the coupling of power pin 208 to support ring 112. System 200 includes an edge ring 228, a cover ring 201, a grounding ring 114, an insulator ring 106, a base ring 210, a device plate 224, a chuck 104, support ring 112, a bowl-shaped body 218, and an insulator wall 230. The insulator wall 230, as described herein, is the wall of the bias enclosure of the plasma chamber. The insulator ring 106 is fixed relative to the insulator wall 230, such as being non-movable. The grounding ring 114 is unpainted. Edge ring 228 is sometimes referred to herein as a thermal edge ring (HER). Edge ring 228 is made of the same material as edge ring 108 of Figure 1, except that edge ring 228 has a different shape than edge ring 108. As an example, edge ring 228 has an outer diameter ranging from about 13.6 inches (inclusive) to about 15 inches along the x-axis. As another example, edge ring 228 has an outer diameter ranging from about 13 inches (inclusive) to about 15 inches. As yet another example, edge ring 228 has a thickness of about 0.248 inches as measured along the y-axis. For illustration, the thickness of the edge ring 228 ranges from about 0.24 inches (inclusive) to about 0.256 inches. Multiple fastener holes (such as fastener hole 124A) in Figure 1 are formed within the edge ring 228 to secure the edge ring 228 to the support ring 112.
此外,蓋環201係由與圖1蓋環118相同的材料製成,除了蓋環201具有與蓋環118不同的形狀。蓋環201具有環形體,諸如盤形或環形的環形體。蓋環201的一部分係位在接地環114上方且毗鄰接地環114,而蓋環201的另一部分係位於毗鄰基環210且在基環210上方。類似地,基環210係由與圖1基環116相同的材料製成,除了基環210具有與基環116不同的形狀之外。Furthermore, the cover ring 201 is made of the same material as the cover ring 118 in Figure 1, except that the cover ring 201 has a different shape than the cover ring 118. The cover ring 201 has a ring shape, such as a disc-shaped or ring-shaped ring. A portion of the cover ring 201 is located above and adjacent to the grounding ring 114, while another portion of the cover ring 201 is located adjacent to and above the base ring 210. Similarly, the base ring 210 is made of the same material as the base ring 116 in Figure 1, except that the base ring 210 has a different shape than the base ring 116.
邊緣環228的部分P5係藉由膠體層110C耦接至支撐環112,以使支撐環112向邊緣環228散熱。類似地,邊緣環228的另一部分P4係藉由膠體層110C耦接至卡盤104的一部分。邊緣環228圍繞卡盤104的頂部部分PRTN1。此外,邊緣環228的另一部分P6係毗鄰基環210之頂表面的一部分。此外,蓋環201圍繞邊緣環228。支撐環112係位在邊緣環228下方且圍繞卡盤104的一部分。絕緣體環106係位在支撐環112下方且圍繞卡盤104的底部部分。基環210係位在蓋環201下方且圍繞絕緣體環106的一部分。接地環114圍繞絕緣體環106的一部分及基環210。缽狀體218係位在絕緣體環106下方。絕緣體壁230係位在絕緣體環106的一部分及接地環114下方。絕緣體壁230係由絕緣體材料製成。A portion P5 of the edge ring 228 is coupled to the support ring 112 via a colloidal layer 110C to dissipate heat from the support ring 112 to the edge ring 228. Similarly, another portion P4 of the edge ring 228 is coupled to a portion of the chuck 104 via a colloidal layer 110C. The edge ring 228 surrounds the top portion PRTN1 of the chuck 104. Furthermore, another portion P6 of the edge ring 228 is a portion of the top surface adjacent to the base ring 210. Additionally, a cover ring 201 surrounds the edge ring 228. The support ring 112 is located below the edge ring 228 and surrounds a portion of the chuck 104. The insulator ring 106 is located below the support ring 112 and surrounds the bottom portion of the chuck 104. The base ring 210 is located below the cover ring 201 and surrounds a portion of the insulator ring 106. The grounding ring 114 surrounds a portion of the insulator ring 106 and the base ring 210. The bowl-shaped body 218 is located below the insulator ring 106. The insulator wall 230 is located below a portion of the insulator ring 106 and the grounding ring 114. The insulator wall 230 is made of insulating material.
功率銷饋通部206係經由絕緣體環106中的通孔及形成於支撐環112內的孔洞插入。功率銷饋通部206係由諸如塑膠或陶瓷之絕緣體製成的套筒以保護功率銷208。功率銷208位在功率銷饋通部206之內。功率銷208係由諸如鋁或鋼的金屬製成之導電桿,以供將RF功率傳導至支撐環112或支撐環112之內的電極EL。功率銷208的尖端係與電極EL接觸以將RF功率提供至電極EL。功率銷饋通部206的中間部分係被包覆在由絕緣體材料製造的安裝座216A之內。The power feed passage 206 is inserted through a through-hole in the insulator ring 106 and a hole formed in the support ring 112. The power feed passage 206 is a sleeve made of an insulator such as plastic or ceramic to protect the power pin 208. The power pin 208 is located within the power feed passage 206. The power pin 208 is a conductive rod made of a metal such as aluminum or steel to conduct RF power to the support ring 112 or the electrode EL within the support ring 112. The tip of the power pin 208 contacts the electrode EL to provide RF power to the electrode EL. The middle part of the power feed passage 206 is enclosed within a mounting base 216A made of insulating material.
O形環214係位在安裝座216A上方且毗鄰安裝座216A,以抵著功率銷饋通部206密封安裝座216A。O形環214圍繞功率銷饋通部206的底部部分。此處描述之O形環的示例係由諸如鋁或鋼之金屬製成的環。此外,另一O形環204係位在功率銷饋通部206的頂部部分,以防止功率銷208與功率銷饋通部206之間的空氣進入其中包含系統200之電漿腔室內的電漿。功率銷208與功率銷饋通部206之間沒有真空。O形環204圍繞功率銷饋通部206的頂部部分。O-ring 214 is positioned above and adjacent to mounting base 216A to seal mounting base 216A against power feed passage 206. O-ring 214 surrounds the bottom portion of power feed passage 206. Examples of O-rings described herein are made of metals such as aluminum or steel. Additionally, another O-ring 204 is positioned at the top portion of power feed passage 206 to prevent air between power pin 208 and power feed passage 206 from entering the plasma chamber containing system 200. There is no vacuum between power pin 208 and power feed passage 206. O-ring 204 surrounds the top portion of power feed passage 206.
應注意在一些實施例中,使用多個功率銷。舉例而言,兩個功率銷係用以在多個位置對電極EL提供功率,該等功率銷可與功率銷饋通部、圍繞功率銷饋通部之各個底部部分的O形環、及圍繞功率銷饋通部之各個頂部部分的O形環一起使用。It should be noted that in some embodiments, multiple power pins are used. For example, two power pins are used to provide power to the electrode EL at multiple locations, and these power pins can be used with power pin feed passages, O-rings around the bottom portions of the power pin feed passages, and O-rings around the top portions of the power pin feed passages.
隔絕RF電壓(stand-off RF voltage)係自經由輔助匹配從輔助RF產生器接收之RF訊號的RF功率產生。隔絕RF電壓具有從蓋環201之垂直定向的內表面203至接地環114的可追踪距離213。隔絕RF電壓係經由自垂直定向的內表面203至接地環114的可追踪距離213產生。應注意在一些實施例中,蓋環201的環形寬度係選擇成使得邊緣環228與接地環114之間的可追踪距離213係足以損失小於預定量之從邊緣環228至接地環114的RF電壓。舉例而言,若在蓋環201之垂直定向的內表面203處待達到之預定量的隔絕電壓係5000伏特(V),且每千分之一英吋的蓋環201耗散7與10伏特之間的電壓,則蓋環201的環形寬度係選擇成使得可追踪距離213或環形寬度係5000伏特之倍數(諸如二或三倍)與10伏特之比率。為了說明,該比率係(2×5000)/10伏特。可追踪距離213係在蓋環201之橫剖面的x-y平面中。x-y平面係由x軸及y軸形成且係位在x軸與y軸之間。The stand-off RF voltage is generated from the RF power of the RF signal received from the auxiliary RF generator via auxiliary matching. The stand-off RF voltage has a traceable distance 213 from the vertically oriented inner surface 203 of the cover ring 201 to the ground ring 114. The stand-off RF voltage is generated via this traceable distance 213 from the vertically oriented inner surface 203 to the ground ring 114. It should be noted that in some embodiments, the ring width of the cover ring 201 is chosen such that the traceable distance 213 between the edge ring 228 and the ground ring 114 is sufficient to reduce the RF voltage loss from the edge ring 228 to the ground ring 114 to a predetermined value. For example, if the predetermined isolation voltage to be achieved at the vertically oriented inner surface 203 of the cover ring 201 is 5000 volts (V), and the cover ring 201 dissipates a voltage between 7 and 10 volts per thousandth of an inch, then the ring width of the cover ring 201 is chosen such that the traceable distance 213 or the ring width is a multiple of 5000 volts (such as two or three times) to 10 volts. For illustration, this ratio is (2 × 5000) / 10 volts. The traceable distance 213 lies in the x-y plane of the cross-section of the cover ring 201. The x-y plane is formed by the x-axis and the y-axis and lies between the x-axis and the y-axis.
在一些實施例中,多個功率銷饋通部係耦接至支撐環112以提供RF功率。各功率銷饋通部具有一功率銷。In some embodiments, multiple power feed passages are coupled to the support ring 112 to provide RF power. Each power feed passage has a power pin.
在一些實施例中,接地環114係塗佈諸如氧化鋁的導電材料以增加接地環114的導電性。In some embodiments, the grounding ring 114 is coated with a conductive material such as alumina to increase the conductivity of the grounding ring 114.
在諸多實施例中,膠體層110C係置放在沿邊緣環228的下表面及沿支撐環112及卡盤104的上表面之多個位置處,以在邊緣環228與支撐環112之間及在邊緣環228與卡盤104之間提供導電性及導熱性。In many embodiments, the colloidal layer 110C is disposed at multiple locations along the lower surface of the edge ring 228 and along the upper surfaces of the support ring 112 and the chuck 104 to provide electrical and thermal conductivity between the edge ring 228 and the support ring 112 and between the edge ring 228 and the chuck 104.
圖3A是系統300之實施例的圖。各壓緊桿(hold down rod)302A及302B係經由支撐環112之底表面308中的各個槽插入。舉例而言,壓緊桿302A係插入至底表面308中在位置L1處的第一槽,以將支撐環112固定至在位置L1處的絕緣體環106。類似地,壓緊桿302B係插入至底表面308中在位置L2處的第二槽,以將支撐環112固定至在位置L2處的絕緣體環106。作為另一示例,各壓緊桿302A及302B在其頂部部分具有螺紋,且螺紋與底表面308內形成之各個槽的螺紋匹配。作為又另一示例,各壓緊桿302A及302B具有基於彈簧之可收縮及可延伸的機構,該機構在插入至底表面308內的各個槽之前收回且在插入之後延伸。Figure 3A is a diagram of an embodiment of system 300. Each hold-down rod 302A and 302B is inserted through a slot in the bottom surface 308 of the support ring 112. For example, hold-down rod 302A is inserted into the first slot in the bottom surface 308 at position L1 to secure the support ring 112 to the insulating ring 106 at position L1. Similarly, hold-down rod 302B is inserted into the second slot in the bottom surface 308 at position L2 to secure the support ring 112 to the insulating ring 106 at position L2. As another example, each clamping rod 302A and 302B has threads on its top portion, and the threads match the threads of the respective slots formed in the bottom surface 308. As yet another example, each clamping rod 302A and 302B has a spring-based retractable and extendable mechanism that retracts before being inserted into the respective slots in the bottom surface 308 and extends after insertion.
應注意沿支撐環112之y軸測量之長度形成的各通孔之尺寸隨支撐環112的外直徑(OD)及內直徑(ID)變化。支撐環112的內直徑隨圖1及2之卡盤104的直徑變化。It should be noted that the dimensions of each through hole formed by the length measured along the y-axis of the support ring 112 vary with the outer diameter (OD) and inner diameter (ID) of the support ring 112. The inner diameter of the support ring 112 varies with the diameter of the chuck 104 in Figures 1 and 2.
在諸多實施例中,將任何數目的壓緊桿(諸如兩個或多於兩個)用以耦接至支撐環112。In many embodiments, any number of clamping rods (such as two or more) are used to couple to the support ring 112.
圖3B係說明壓緊桿302A與支撐環112之底表面308之耦接的等角視圖。在底表面內形成的係沿支撐環112的長度部分地延伸的槽330。支撐環112的長度係沿著y軸。槽330裝配有接收器332,該接收器332係由諸如鋁或鋼或鈦或鋁的合金或鋼的合金或鈦的合金之金屬製成。舉例而言,接收器332係經由諸如螺紋的附接機構附接至槽330的表面。為了進一步說明,槽330具有與接收器332的螺紋接合的螺紋。壓緊桿302A的尖端係插入至接收器332以與接收器332接合而將壓緊桿302A連接至支撐環112。Figure 3B is an isometric view illustrating the coupling between the clamping rod 302A and the bottom surface 308 of the support ring 112. A groove 330 is formed within the bottom surface, extending partially along the length of the support ring 112. The length of the support ring 112 is along the y-axis. The groove 330 is fitted with a receiver 332, which is made of a metal such as aluminum, steel, titanium, an alloy of aluminum, an alloy of steel, or an alloy of titanium. For example, the receiver 332 is attached to the surface of the groove 330 via an attachment mechanism such as a thread. To further illustrate, the groove 330 has threads that engage with the threaded receiver 332. The tip of the clamping rod 302A is inserted into the receiver 332 to engage with the receiver 332, thereby connecting the clamping rod 302A to the support ring 112.
圖4係用於將邊緣環924及支撐環112固定至絕緣體環106之系統900之實施例的側視圖。邊緣環924的示例包含圖1的邊緣環108及圖2的邊緣環228。系統900包含扣緊機構920A、絕緣體環106、支撐環112、及邊緣環924。扣緊機構920A包含氣缸912、氣動活塞922、螺紋適配器908、按壓連接器906、及用於將壓緊桿302A安裝至絕緣體壁230的安裝座604A。安裝座604A係藉由多個肩螺釘902安裝至絕緣體壁230。扣緊機構920A係耦接至多個空氣配件914,其包含位於扣緊機構920A之一側處的空氣配件914A及空氣配件914B。此處描述的扣緊機構係由諸如鋼、鋁、鋼的合金、或鋁的合金等之金屬製成。此外,空氣配件914係亦由諸如鋼、鋁、鋼的合金、或鋁的合金等之金屬製成。Figure 4 is a side view of an embodiment of a system 900 for securing the edge ring 924 and the support ring 112 to the insulator ring 106. Examples of the edge ring 924 include the edge ring 108 of Figure 1 and the edge ring 228 of Figure 2. The system 900 includes a locking mechanism 920A, an insulator ring 106, a support ring 112, and an edge ring 924. The locking mechanism 920A includes a cylinder 912, a pneumatic piston 922, a threaded adapter 908, a pressing connector 906, and a mounting base 604A for mounting the clamping rod 302A to the insulator wall 230. Mounting base 604A is mounted to insulating wall 230 by multiple shoulder screws 902. Fastening mechanism 920A is coupled to multiple air fittings 914, including air fittings 914A and 914B located on one side of fastening mechanism 920A. The fastening mechanism described herein is made of metals such as steel, aluminum, steel alloys, or aluminum alloys. Furthermore, air fittings 914 are also made of metals such as steel, aluminum, steel alloys, or aluminum alloys.
活塞922具有活塞體916及活塞桿918。活塞體916係在氣缸912內。活塞體916具有大於活塞桿918的直徑。活塞體916係與活塞桿918整合或附接至活塞桿918。安裝座604A係藉由在氣缸912之頂表面處的多個螺釘910附接至氣缸912。螺紋適配器908係插入至安裝座604A的中心開口930。螺紋適配器908係裝配至在活塞桿918之頂表面內形成的槽中。此外,螺紋適配器908具有用於將按壓連接器906裝配在槽內的槽。按壓連接器906係裝配有壓緊桿302A,該壓緊桿302A係經由安裝座604A的中心開口930插入。按壓連接器906係附接至(諸如旋緊至)壓緊桿302A的底部部分。Piston 922 has piston body 916 and piston rod 918. Piston body 916 is located within cylinder 912. Piston body 916 has a diameter larger than piston rod 918. Piston body 916 is integrated with or attached to piston rod 918. Mounting seat 604A is attached to cylinder 912 by a plurality of screws 910 on the top surface of cylinder 912. Thread adapter 908 is inserted into the center opening 930 of mounting seat 604A. Thread adapter 908 is fitted into a groove formed in the top surface of piston rod 918. Furthermore, thread adapter 908 has a slot for fitting press connector 906 into the slot. The push-button connector 906 is equipped with a clamping lever 302A, which is inserted through the center opening 930 of the mounting base 604A. The push-button connector 906 is attached to (e.g., tightened to) the bottom portion of the clamping lever 302A.
類似地,另一壓緊桿302B(圖3A)係耦接至扣緊機構920B的另一氣動機構,其係描述於下。舉例而言,扣緊機構920B包含活塞(諸如活塞922),其係耦接至壓緊桿302B以在沿y軸的垂直方向上使壓緊桿302B向上及向下運動。壓緊桿302A在其尖端具有螺紋932,用於與在支撐環112的底表面308內形成的槽931之對應的螺紋934匹配。壓緊桿302A的頂部部分PR1經由支撐環112的底表面延伸至支撐環112內的槽中,而壓緊桿302A的中間部分PR2經由絕緣體環106內的通孔延伸。類似地,壓緊桿302B的頂部部分延伸至支撐環112之底表面內的槽中,而壓緊桿302B的中間部分延伸至絕緣體環106內的通孔中。Similarly, another clamping rod 302B (FIG. 3A) is another pneumatic mechanism coupled to the locking mechanism 920B, which is described below. For example, the locking mechanism 920B includes a piston (such as piston 922) coupled to the clamping rod 302B to move the clamping rod 302B up and down in a vertical direction along the y-axis. The clamping rod 302A has a thread 932 at its tip for mating with a thread 934 corresponding to a groove 931 formed in the bottom surface 308 of the support ring 112. The top portion PR1 of the clamping rod 302A extends through the bottom surface of the support ring 112 into a groove within the support ring 112, while the middle portion PR2 of the clamping rod 302A extends through a through-hole within the insulator ring 106. Similarly, the top portion of the clamping rod 302B extends into a groove within the bottom surface of the support ring 112, while the middle portion of the clamping rod 302B extends into a through-hole within the insulator ring 106.
如上所述,支撐環112係經由一或更多緊固件物理性地連接至邊緣環924。當空氣經由空氣配件914B供應至氣缸912的下部時,壓力係藉由活塞體916之下表面下方的空氣產生。由於在活塞體916之下表面下方產生的壓力,活塞922沿y軸在垂直向上的方向上運動以將壓緊桿302A向上推。當壓緊桿302A被向上推時,支撐環112相對於絕緣體環106在垂直向上的方向上抬升。與支撐環112同時,邊緣環924係亦在遠離絕緣體環106之垂直向上的方向上抬升。支撐環112及邊緣環924在垂直向上的方向上被推離絕緣體環106,以供從電漿腔室移除支撐環112及邊緣環924。支撐環112及邊緣環924係加以移除以供支撐環112、或邊緣環924、或其組合的更換或維修。As described above, the support ring 112 is physically connected to the edge ring 924 via one or more fasteners. When air is supplied to the lower part of the cylinder 912 via the air fitting 914B, pressure is generated by the air below the lower surface of the piston body 916. Due to the pressure generated below the lower surface of the piston body 916, the piston 922 moves vertically upward along the y-axis to push the clamping rod 302A upward. When the clamping rod 302A is pushed upward, the support ring 112 rises vertically upward relative to the insulating ring 106. Simultaneously with the support ring 112, the edge ring 924 is also raised in a vertically upward direction away from the insulator ring 106. The support ring 112 and edge ring 924 are pushed vertically upward away from the insulator ring 106 to allow for removal of the support ring 112 and edge ring 924 from the plasma chamber. The support ring 112 and edge ring 924 are removed for replacement or repair of the support ring 112, or the edge ring 924, or a combination thereof.
另一方面,當空氣經由空氣配件914A供應至氣缸912的上部時,壓力係藉由活塞體916之上表面上方的空氣產生。由於在活塞體916之上表面上方產生的壓力,活塞922沿y軸在垂直向下的方向上運動以將壓緊桿302A向下拉。當壓緊桿302A被向下拉時,支撐環112相對於絕緣體環106在垂直向下的方向上被向下拉。與支撐環112同時,邊緣環924係亦在垂直向下的方向上朝絕緣體環106被向下拉。在置放在卡盤104上之基板的處理期間,支撐環112及邊緣環924係朝絕緣體環106被向下拉,以供置放在卡盤104上之基板的處理。On the other hand, when air is supplied to the upper part of cylinder 912 via air fitting 914A, pressure is generated by the air above the upper surface of piston body 916. Due to the pressure generated above the upper surface of piston body 916, piston 922 moves vertically downward along the y-axis to pull pressure rod 302A downward. When pressure rod 302A is pulled downward, support ring 112 is pulled downward relative to insulator ring 106 in a vertically downward direction. Simultaneously with support ring 112, edge ring 924 is also pulled downward toward insulator ring 106 in a vertically downward direction. During the processing of the substrate placed on the chuck 104, the support ring 112 and the edge ring 924 are pulled downward toward the insulator ring 106 to facilitate the processing of the substrate placed on the chuck 104.
圖5係扣緊機構920A之實施例的等角視圖。圖5中顯示的是螺釘910其中一者及安裝座604A。Figure 5 is an isometric view of an embodiment of the fastening mechanism 920A. Figure 5 shows one of the screws 910 and the mounting base 604A.
圖6A是系統1100之實施例的圖,用於說明多個壓緊桿302A及302B(圖3A)的同步下拉。系統1100包含空氣路線1102A、扣緊機構920A、扣緊機構920B、及扣緊機構920C。扣緊機構920B及920C具有與扣緊機構920A相同的結構及功能。作為示例,扣緊機構920A至920C各者具有雙動缸(double-acting cylinder)。扣緊機構920B係藉由安裝座連接至壓緊桿302B,而扣緊機構920C係藉由安裝座連接至壓緊桿。Figure 6A is a diagram of an embodiment of system 1100, illustrating the synchronous pull-down of multiple clamping levers 302A and 302B (Figure 3A). System 1100 includes an air path 1102A, a locking mechanism 920A, a locking mechanism 920B, and a locking mechanism 920C. Locking mechanisms 920B and 920C have the same structure and function as locking mechanism 920A. As an example, each of locking mechanisms 920A to 920C has a double-acting cylinder. Locking mechanism 920B is connected to clamping lever 302B via a mounting bracket, while locking mechanism 920C is connected to clamping lever via a mounting bracket.
空氣路線如本文所述具有多個管,其中各者係由絕緣體材料製成,諸如塑膠及塑化劑的組合、或塑膠。空氣路線係撓性的而能夠連接至扣緊機構920A-920C的上部或下部。As described herein, the air path has multiple tubes, each made of an insulating material, such as a combination of plastics and plasticizers, or plastic alone. The air path is flexible and can be connected to the upper or lower part of the fastening mechanism 920A-920C.
空氣路線1102A包含多個管1106A、1106B、1106C、1106D、及1106E。管1106A及1106D係藉由連接器C1連接至管1106B,而管1106B及1106E係藉由連接器C2連接至管1106C。此處描述之連接多個管的各連接器具有中空空間以允許經由該中空空間的空氣通路。作為示例,連接多個管的各連接器係皆由絕緣體材料製成。Air path 1102A includes multiple pipes 1106A, 1106B, 1106C, 1106D, and 1106E. Pipes 1106A and 1106D are connected to pipe 1106B via connector C1, while pipes 1106B and 1106E are connected to pipe 1106C via connector C2. Each connector connecting the multiple pipes described herein has a hollow space to allow air passage through the hollow space. As an example, each connector connecting the multiple pipes is made of an insulating material.
管1106D係藉由空氣配件914A(圖4)連接至扣緊機構920A的上部1104A。類似地,管1106E係藉由空氣配件(諸如空氣配件914A)連接至扣緊機構920B的上部1104C,而管1106C係藉由空氣配件(諸如空氣配件914A)連接至扣緊機構920C的上部1104E。Pipe 1106D is connected to the upper part 1104A of the fastening mechanism 920A via air fitting 914A (Figure 4). Similarly, pipe 1106E is connected to the upper part 1104C of the fastening mechanism 920B via air fitting (such as air fitting 914A), and pipe 1106C is connected to the upper part 1104E of the fastening mechanism 920C via air fitting (such as air fitting 914A).
空氣係經由管1106A、連接器C1、及管1106D供應至扣緊機構920A的上部1104A。類似地,空氣係經由管1106A、連接器C1、管1106B、連接器C2、及管1106E供應至扣緊機構920B的上部1104C。此外,空氣係經由管1106A、連接器C1、管1106B、連接器C2、及管1106C供應至扣緊機構920C的上部1104E。當空氣係供應至上部1104A、1104C、及1104E時,扣緊機構920A-920C的活塞係沿y軸同步(諸如同時)下拉以使支撐環112(圖4)及邊緣環924(圖4)朝絕緣體環106(圖4)運動。Air is supplied to the upper part 1104A of the fastening mechanism 920A via pipe 1106A, connector C1, and pipe 1106D. Similarly, air is supplied to the upper part 1104C of the fastening mechanism 920B via pipe 1106A, connector C1, pipe 1106B, connector C2, and pipe 1106E. Furthermore, air is supplied to the upper part 1104E of the fastening mechanism 920C via pipe 1106A, connector C1, pipe 1106B, connector C2, and pipe 1106C. When the air system supplies air to the upper parts 1104A, 1104C, and 1104E, the piston system of the locking mechanism 920A-920C is synchronously pulled down along the y-axis (all at the same time) to make the support ring 112 (Fig. 4) and the edge ring 924 (Fig. 4) move toward the insulator ring 106 (Fig. 4).
如下所述,在功率銷208、壓緊桿302A及302B、及溫度探針軸周圍有多個筒密封件。這些筒形密封件沿y軸在垂直向上的方向上對支撐環112施加力。扣緊機構920A-920C在垂直向上的方向上克服向上的力,以防止支撐環112在垂直方向上相對於卡盤向上抬升。此外,扣緊機構920A-920C對在邊緣環924與卡盤104之間的膠體層110B及110C(圖1及2)施加夾持力。雙動缸在垂直向上的方向上或在垂直向下的方向上對支撐環112施加與支撐環112之溫度無相依性的恆定力。As described below, multiple cylindrical seals surround the power pin 208, clamping rods 302A and 302B, and the temperature probe shaft. These cylindrical seals apply a force to the support ring 112 in a vertically upward direction along the y-axis. Clamping mechanisms 920A-920C counteract the upward force in the vertically upward direction to prevent the support ring 112 from lifting upward relative to the chuck in the vertical direction. Furthermore, clamping mechanisms 920A-920C apply a clamping force to the gel layers 110B and 110C (Figures 1 and 2) between the edge ring 924 and the chuck 104. The double-acting cylinder applies a constant force to the support ring 112 in a vertically upward or vertically downward direction, which is independent of the temperature of the support ring 112.
圖6B是系統1150之實施例的圖,用於說明多個壓緊桿302A及302B(圖3A)的同步上推。系統1150包含空氣路線1102B、扣緊機構920A、扣緊機構920B、及扣緊機構920C。Figure 6B is a diagram of an embodiment of system 1150, used to illustrate the synchronous upward push of multiple clamping levers 302A and 302B (Figure 3A). System 1150 includes air path 1102B, clamping mechanism 920A, clamping mechanism 920B, and clamping mechanism 920C.
空氣路線1102B包含多個管1106F、1106G、1106H、1106I、及1106J。管1106F及1106I係藉由連接器C3連接至管1106G,而管1106G及1106J係藉由連接器C4連接至管1106H。管1106I係藉由空氣配件914B(圖4)連接至扣緊機構920A的下部1104B。類似地,管1106J係藉由空氣配件(諸如空氣配件914B)連接至扣緊機構920B的下部1104D,而管1106H係藉由空氣配件(諸如空氣配件914B)連接至扣緊機構920C的下部1104F。Air circuit 1102B includes multiple pipes 1106F, 1106G, 1106H, 1106I, and 1106J. Pipes 1106F and 1106I are connected to pipe 1106G via connector C3, while pipes 1106G and 1106J are connected to pipe 1106H via connector C4. Pipe 1106I is connected to the lower part 1104B of the fastening mechanism 920A via air fitting 914B (Figure 4). Similarly, pipe 1106J is connected to the lower part 1104D of fastening mechanism 920B via an air fitting (such as air fitting 914B), while pipe 1106H is connected to the lower part 1104F of fastening mechanism 920C via an air fitting (such as air fitting 914B).
空氣係經由管1106F、連接器C3、及管1106I供應至扣緊機構920A的下部1104B。類似地,空氣係經由管1106F、連接器C3、管1106G、連接器C4、及管1106J供應至扣緊機構920B的下部1104D。此外,空氣係經由管1106F、連接器C3、管1106G、連接器C4、及管1106H供應至扣緊機構920C的下部1104F。當空氣係供應至下部1104B、1104D、及1104F時,扣緊機構920A-920C的活塞係沿y軸同步(諸如同時)上推以使支撐環112(圖4)及邊緣環924(圖4)遠離絕緣體環106(圖4)而運動。Air is supplied to the lower part 1104B of the fastening mechanism 920A via pipe 1106F, connector C3, and pipe 1106I. Similarly, air is supplied to the lower part 1104D of the fastening mechanism 920B via pipe 1106F, connector C3, pipe 1106G, connector C4, and pipe 1106J. Furthermore, air is supplied to the lower part 1104F of the fastening mechanism 920C via pipe 1106F, connector C3, pipe 1106G, connector C4, and pipe 1106H. When the air system supplies air to the lower parts 1104B, 1104D, and 1104F, the piston system of the locking mechanism 920A-920C synchronously (all at the same time) pushes upward along the y-axis to move the support ring 112 (Fig. 4) and the edge ring 924 (Fig. 4) away from the insulator ring 106 (Fig. 4).
圖7是系統1200之實施例的方塊圖,以說明將空氣供應至扣緊機構920A至920C。系統1200包含多個空氣壓縮器1202A和1202B、多個空氣壓力調節器1204A和1204B、多個孔口1206A和1206B、空氣路線1102A和1102B、及扣緊機構920A至920C。空氣壓縮器1202A係藉由調節器1204A和孔口1206A及空氣路線1102A耦接至扣緊機構920A至920C的上部。類似地,空氣壓縮器1202B係藉由調節器1204B和孔口1206B及空氣路線1102B耦接至扣緊機構920A至920C的下部。Figure 7 is a block diagram of an embodiment of system 1200 illustrating the supply of air to the locking mechanisms 920A to 920C. System 1200 includes multiple air compressors 1202A and 1202B, multiple air pressure regulators 1204A and 1204B, multiple orifices 1206A and 1206B, air lines 1102A and 1102B, and locking mechanisms 920A to 920C. Air compressor 1202A is coupled to the upper part of locking mechanisms 920A to 920C via regulator 1204A, orifice 1206A, and air line 1102A. Similarly, the air compressor 1202B is coupled to the lower part of the locking mechanism 920A to 920C via the regulator 1204B, the orifice 1206B, and the air line 1102B.
空氣壓縮器1202A壓縮空氣以產生經壓縮的空氣。經壓縮的空氣係供應至空氣壓力調節器1204A。空氣壓力調節器1204A將經壓縮之空氣的壓力控制(諸如改變)成預定的空氣壓力,且將具有預定空氣壓力之經壓縮的空氣經由孔口1206A及空氣路線1102A供應至扣緊機構920A的上部。此處描述之預定空氣壓力之示例係28磅/平方英吋(psi)的空氣壓力。如本文所述之預定空氣壓力的其他示例是範圍在25 psi與31 psi之間的空氣壓力。Air compressor 1202A compresses air to produce compressed air. The compressed air is supplied to air pressure regulator 1204A. Air pressure regulator 1204A controls (e.g., changes) the pressure of the compressed air to a predetermined air pressure and supplies compressed air with the predetermined air pressure through orifice 1206A and air line 1102A to the upper part of locking mechanism 920A. An example of the predetermined air pressure described herein is 28 pounds per square inch (psi). Other examples of preset air pressures, as described in this article, are air pressures ranging from 25 psi to 31 psi.
類似地,空氣壓縮器1202B壓縮空氣以產生經壓縮的空氣。經壓縮的空氣係供應至空氣壓力調節器1204B。空氣壓力調節器1204B將經壓縮之空氣的壓力控制(諸如改變)成預定的空氣壓力,且將具有預定空氣壓力之經壓縮的空氣經由孔口1206B及空氣路線1102B供應至扣緊機構920B的下部。Similarly, air compressor 1202B compresses air to produce compressed air. The compressed air is supplied to air pressure regulator 1204B. Air pressure regulator 1204B controls (e.g., changes) the pressure of the compressed air to a predetermined air pressure, and supplies the compressed air with the predetermined air pressure to the lower part of the locking mechanism 920B through orifice 1206B and air line 1102B.
圖8A係邊緣環228之實施例的等角視圖。邊緣環228具有頂表面1604。圖8A說明在邊緣環228之底表面1612內形成之多個緊固件孔124A、124B、及124C的透視圖。Figure 8A is an isometric view of an embodiment of the edge ring 228. The edge ring 228 has a top surface 1604. Figure 8A illustrates a perspective view of a plurality of fastener holes 124A, 124B, and 124C formed in the bottom surface 1612 of the edge ring 228.
在一些實施例中,使任何其他數目的緊固件孔(諸如六或九個緊固件孔)在底表面1612內形成,以供用於將相同數目的緊固件裝配在各個孔內。舉例而言,在邊緣環228之底表面1612內形成之一組的兩個毗鄰孔之間的距離係與在邊緣環228之底表面1612內形成之另一組的兩個毗鄰孔之間的距離相同。為了說明,該組的兩個毗鄰孔之其中任一者與該另一組的兩個毗鄰孔之其中一者相同或不相同。In some embodiments, any other number of fastener holes (such as six or nine fastener holes) are formed within the bottom surface 1612 for assembling the same number of fasteners into the holes. For example, the distance between two adjacent holes in one set formed within the bottom surface 1612 of the edge ring 228 is the same as the distance between two adjacent holes in another set formed within the bottom surface 1612 of the edge ring 228. For illustration, either of the two adjacent holes in that set may be the same as or different from one of the two adjacent holes in the other set.
圖8B係邊緣環228之實施例的頂視圖。邊緣環228具有內直徑ID1及外直徑OD1。外直徑OD1之範圍從約13.6英吋(含)至約15英吋。作為另一示例,外直徑OD1之範圍從約13.6英吋(含)至約16英吋。作為又另一示例,外直徑OD1之範圍從約12英吋(含)至約18英吋。當外直徑OD1超過13.6英吋(諸如大於14英吋或接近15英吋)時,在邊緣環228與蓋環118間之RF功率之電弧放電的可能性降低。內直徑ID1係邊緣環228之內周緣的直徑,而外直徑OD1係邊緣環228之外周緣的直徑。頂表面1604在邊緣環228的頂視圖中係可見的。Figure 8B is a top view of an embodiment of the edge ring 228. The edge ring 228 has an inner diameter ID1 and an outer diameter OD1. The outer diameter OD1 ranges from about 13.6 inches (inclusive) to about 15 inches. As another example, the outer diameter OD1 ranges from about 13.6 inches (inclusive) to about 16 inches. As yet another example, the outer diameter OD1 ranges from about 12 inches (inclusive) to about 18 inches. When the outer diameter OD1 exceeds 13.6 inches (e.g., greater than 14 inches or close to 15 inches), the possibility of arcing of RF power between the edge ring 228 and the cover ring 118 is reduced. The inner diameter ID1 is the diameter of the inner periphery of the edge ring 228, while the outer diameter OD1 is the diameter of the outer periphery of the edge ring 228. The top surface 1604 is visible in the top view of the edge ring 228.
圖8C係沿圖8B中描繪之A-A橫剖面之邊緣環228的橫剖面圖。邊緣環228具有頂表面1604(在本文有時被稱為頂側)及底表面1612(其在本文有時被稱為底側)。頂表面1604及底表面1612其中各者係皆水平定向的表面。頂表面1604在本文有時被稱為頂側。邊緣環228進一步具有內表面1620(在本文有時被稱為內側)及外表面1614(其在本文有時被稱為外側)。外表面1614係垂直定向的表面。應注意邊緣環228具有環形體,諸如圓形體、或環形體、或盤形體。Figure 8C is a cross-sectional view of the edge ring 228 along the A-A cross-section depicted in Figure 8B. The edge ring 228 has a top surface 1604 (sometimes referred to herein as the top side) and a bottom surface 1612 (sometimes referred to herein as the bottom side). Both the top surface 1604 and the bottom surface 1612 are horizontally oriented surfaces. The top surface 1604 is sometimes referred to herein as the top side. The edge ring 228 further has an inner surface 1620 (sometimes referred to herein as the inner side) and an outer surface 1614 (sometimes referred to herein as the outer side). The outer surface 1614 is a vertically oriented surface. It should be noted that the edge ring 228 has a toroidal shape, such as a circle, a toroidal shape, or a disc shape.
邊緣環228具有台階1622,該台階1622包含呈角度的內表面1606及水平定向的內表面1608。呈角度的內表面1606形成角度A2,該角度A2相對於垂直定向的內表面1610係約15°或約50°。在一實施例中,角度A2的範圍在約5°和約55°之間。在另一實施例中,角度A2的範圍在約12°和約20°之間。在又另一實施例中,角度A2的範圍在約10°與約20°之間。呈角度的內表面1606係與頂表面1604鄰接。舉例而言,呈角度的內表面1606相對於頂表面1604形成半徑R3。為了說明,半徑R3最大係約0.01英吋。舉例而言,具有半徑R3的曲線係在呈角度的內表面1606與頂表面1604之間形成。作為示例,半徑R3之範圍從約0.009英吋(含)至約0.011英吋。The edge ring 228 has a step 1622, which includes an angled inner surface 1606 and a horizontally oriented inner surface 1608. The angled inner surface 1606 forms an angle A2 that is about 15° or about 50° relative to the vertically oriented inner surface 1610. In one embodiment, the angle A2 ranges between about 5° and about 55°. In another embodiment, the angle A2 ranges between about 12° and about 20°. In yet another embodiment, the angle A2 ranges between about 10° and about 20°. The angled inner surface 1606 is adjacent to the top surface 1604. For example, the angled inner surface 1606 forms a radius R3 relative to the top surface 1604. For illustration, the maximum radius R3 is approximately 0.01 inches. For example, a curve with a radius R3 is formed between an angled inner surface 1606 and a top surface 1604. As an example, the radius R3 ranges from approximately 0.009 inches (inclusive) to approximately 0.011 inches.
水平定向的內表面1608係與呈角度的內表面1606鄰接。舉例而言,水平定向的內表面1608相對於呈角度的內表面1606形成半徑R4。為了說明,半徑R4係約0.032英吋。舉例而言,具有半徑R4的曲線在水平定向的內表面1608與呈角度的內表面1606之間形成。作為示例,半徑R4之範圍從約0.003英吋(含)至約0.0034英吋。邊緣環228上形成半徑R4之位置的中間直徑(MD)係約11.858英吋。舉例而言,中間直徑之範圍從約11.856英吋(含)至約11.86英吋。The horizontally oriented inner surface 1608 is adjacent to the angled inner surface 1606. For example, the horizontally oriented inner surface 1608 forms a radius R4 relative to the angled inner surface 1606. For illustration, the radius R4 is approximately 0.032 inches. For example, a curve with a radius R4 is formed between the horizontally oriented inner surface 1608 and the angled inner surface 1606. As an example, the radius R4 ranges from approximately 0.003 inches (inclusive) to approximately 0.0034 inches. The median diameter (MD) of the location on the edge ring 228 where the radius R4 is formed is approximately 11.858 inches. For example, the median diameter ranges from approximately 11.856 inches (inclusive) to approximately 11.86 inches.
如本文所述之水平定向的表面係實質平行於x軸,而如本文所述之垂直定向的表面係實質平行於y軸。舉例而言,水平定向的表面相對於x軸形成範圍從-5°至+5°的角度,而垂直定向的表面相對於y軸形成範圍從-5°至+5°的角度。為了說明,水平定向的表面係平行於x軸且垂直於y軸,而垂直定向的表面係平行於y軸且垂直於x軸。如本文所述之呈角度的表面係非垂直定向的表面亦非水平定向的表面。As described herein, a horizontally oriented surface is substantially parallel to the x-axis, while a vertically oriented surface is substantially parallel to the y-axis. For example, a horizontally oriented surface forms an angle ranging from -5° to +5° relative to the x-axis, while a vertically oriented surface forms an angle ranging from -5° to +5° relative to the y-axis. To illustrate, a horizontally oriented surface is parallel to the x-axis and perpendicular to the y-axis, while a vertically oriented surface is parallel to the y-axis and perpendicular to the x-axis. Angular surfaces, as described herein, are neither vertically oriented nor horizontally oriented surfaces.
水平定向的內表面1608係藉由呈角度的內表面1606與頂表面1604分開。舉例而言,呈角度的內表面1606係毗鄰頂表面1604及水平定向的內表面1608,但水平定向的內表面1608不毗鄰頂表面1604。The horizontally oriented inner surface 1608 is separated from the top surface 1604 by an angled inner surface 1606. For example, the angled inner surface 1606 is adjacent to both the top surface 1604 and the horizontally oriented inner surface 1608, but the horizontally oriented inner surface 1608 is not adjacent to the top surface 1604.
此外,內表面1620具有垂直定向的內表面1610,該內表面1610係與水平定向的內表面1608鄰接。舉例而言,垂直定向的內表面1610相對於水平定向的內表面1608形成半徑R5。為了說明,具有半徑R5的曲線係在垂直定向的內表面1610與水平定向的內表面1608之間形成。作為示例,半徑R5係約0.012英吋。為了說明,半徑R5之範圍從約0.007英吋(含)至約0.017英吋。沿y軸之垂直定向的內表面1610之距離d3係約0.0169英吋。舉例而言,距離d3之範圍從約0.0164英吋(含)至約0.0174英吋。垂直定向表面之距離係在垂直定向表面的垂直方向上沿y軸的長度。此外,水平定向表面之距離係在水平方向上沿x軸之水平定向表面的寬度。此外,呈角度表面之距離係在沿y軸的垂直方向上測量。垂直定向的內表面1610具有大約11.7英吋的內直徑ID1。舉例而言,內直徑ID1的範圍從約11英吋(含)至約12.4英吋。Furthermore, the inner surface 1620 has a vertically oriented inner surface 1610 adjacent to a horizontally oriented inner surface 1608. For example, the vertically oriented inner surface 1610 forms a radius R5 relative to the horizontally oriented inner surface 1608. For illustration, a curve with radius R5 is formed between the vertically oriented inner surface 1610 and the horizontally oriented inner surface 1608. As an example, the radius R5 is approximately 0.012 inches. For illustration, the radius R5 ranges from approximately 0.007 inches (inclusive) to approximately 0.017 inches. The distance d3 along the y-axis of the vertically oriented inner surface 1610 is approximately 0.0169 inches. For example, the distance d3 ranges from approximately 0.0164 inches (inclusive) to approximately 0.0174 inches. The distance of the vertically oriented surface is the length along the y-axis in the vertical direction of the vertically oriented surface. Furthermore, the distance of the horizontally oriented surface is the width of the horizontally oriented surface along the x-axis in the horizontal direction. Additionally, the distance of the angled surface is measured in the vertical direction along the y-axis. The vertically oriented inner surface 1610 has an inner diameter ID1 of approximately 11.7 inches. For example, the inner diameter ID1 ranges from approximately 11 inches (inclusive) to approximately 12.4 inches.
此外,內表面1620具有呈角度的內表面1618,該呈角度的內表面1618相對於垂直定向的內表面1610及底表面1612呈角度。呈角度的內表面1618係與垂直定向的內表面1610鄰接。舉例而言,呈角度的內表面1618相對於垂直定向的內表面1610形成半徑R6。為了說明,具有半徑R6的曲線係在呈角度的內表面1618與垂直定向的內表面1610之間形成。作為示例,半徑R6係約0.015英吋。為了說明,半徑R6之範圍從約0.0149英吋(含)至約0.0151英吋。此外,呈角度的內表面1618係與底表面1612鄰接。舉例而言,呈角度的內表面1618相對於底表面1612形成半徑R7。為了說明,具有半徑R7的曲線係在呈角度的內表面1618與底表面1612之間形成。作為示例,半徑R7係約半徑R6的兩倍。為了說明,半徑R6之範圍從約2×0.0149英吋(含)至約2×0.0151英吋。Furthermore, the inner surface 1620 has an angled inner surface 1618 that is angled relative to the vertically oriented inner surface 1610 and the bottom surface 1612. The angled inner surface 1618 is adjacent to the vertically oriented inner surface 1610. For example, the angled inner surface 1618 forms a radius R6 relative to the vertically oriented inner surface 1610. For illustration, a curve with a radius R6 is formed between the angled inner surface 1618 and the vertically oriented inner surface 1610. As an example, the radius R6 is approximately 0.015 inches. For illustration, the radius R6 ranges from approximately 0.0149 inches (inclusive) to approximately 0.0151 inches. Furthermore, the angled inner surface 1618 is adjacent to the bottom surface 1612. For example, the angled inner surface 1618 forms a radius R7 relative to the bottom surface 1612. For illustration, a curve with radius R7 is formed between the angled inner surface 1618 and the bottom surface 1612. As an example, radius R7 is approximately twice the radius R6. For illustration, radius R6 ranges from approximately 2 × 0.0149 inches (inclusive) to approximately 2 × 0.0151 inches.
呈角度的內表面1618具有約0.035英吋的長度d2。舉例而言,長度d2之範圍從約0.0345英吋(含)至約0.0355英吋。呈角度的內表面1618相對於垂直定向的內表面1610形成約30°的角度A1。舉例而言,角度A1之範圍從約28°(含)至約32°。應注意呈角度的內表面1606、水平定向的內表面1608、垂直定向的內表面1610、及呈角度的內表面1618之組合在本文有時被稱為邊緣環228的內側。The angled inner surface 1618 has a length d2 of approximately 0.035 inches. For example, the length d2 ranges from approximately 0.0345 inches (inclusive) to approximately 0.0355 inches. The angled inner surface 1618 forms an angle A1 of approximately 30° relative to the vertically oriented inner surface 1610. For example, the angle A1 ranges from approximately 28° (inclusive) to approximately 32°. Note that the combination of the angled inner surface 1606, the horizontally oriented inner surface 1608, the vertically oriented inner surface 1610, and the angled inner surface 1618 is sometimes referred to herein as the inner side of the edge ring 228.
外表面1614係與底表面1612鄰接,諸如毗鄰底表面1612或與底表面1612接續。舉例而言,外表面1614相對於底表面1612形成半徑R2。為了說明,具有半徑R2的曲線係在外表面1614與底表面1612之間形成。作為示例,半徑R2係約0.012英吋。為了說明,半徑R2之範圍在0.0119英吋與0.0121英吋之間。The outer surface 1614 is adjacent to, or continues, the bottom surface 1612. For example, the outer surface 1614 forms a radius R2 relative to the bottom surface 1612. For illustration, a curve with a radius R2 is formed between the outer surface 1614 and the bottom surface 1612. As an example, the radius R2 is approximately 0.012 inches. For illustration, the radius R2 ranges between 0.0119 inches and 0.0121 inches.
邊緣環228包含在邊緣環228的頂表面1604與外表面1614間形成之彎曲的邊緣1616。舉例而言,彎曲的邊緣1616係毗鄰頂表面1604及外表面1614,諸如位在頂表面1604及外表面1614旁邊。彎曲的邊緣1616具有半徑R1。舉例而言,半徑R1係約0.1英吋。為了說明,半徑R1之範圍在0.8英吋與0.12英吋之間。彎曲的邊緣1616之曲率減少邊緣環228與蓋環201間之RF功率之電弧放電的可能性。電弧放電發生於當電漿在電漿腔室之內形成及維持之時。尖銳的邊緣增加電弧放電的可能性。沿y軸之彎曲的邊緣1616之高度及沿y軸之外表面1614之長度的垂直距離之總和的距離d1係約0.23英吋。作為示例,距離d1之範圍從約0.229英吋(含)至約0.231英吋。作為示例,外表面1614具有約14.06英吋的外直徑OD1,外直徑OD1之範圍在13.5英吋與14.5英吋之間。應注意本文描述之邊緣環的內直徑或外直徑或中間直徑係相對於穿過邊緣環之質心的中心軸線形成。The edge ring 228 includes a curved edge 1616 formed between the top surface 1604 and the outer surface 1614 of the edge ring 228. For example, the curved edge 1616 is adjacent to the top surface 1604 and the outer surface 1614, such as being located beside the top surface 1604 and the outer surface 1614. The curved edge 1616 has a radius R1. For example, the radius R1 is approximately 0.1 inches. For illustration, the radius R1 ranges between 0.8 inches and 0.12 inches. The curvature of the curved edge 1616 reduces the possibility of arcing of RF power between the edge ring 228 and the cover ring 201. Arc discharge occurs when plasma is formed and maintained within the plasma chamber. Sharp edges increase the likelihood of arc discharge. The distance d1, the sum of the height of the curved edge 1616 along the y-axis and the vertical distance of the length of the outer surface 1614 along the y-axis, is approximately 0.23 inches. As an example, the distance d1 ranges from approximately 0.229 inches (inclusive) to approximately 0.231 inches. As an example, the outer surface 1614 has an outer diameter OD1 of approximately 14.06 inches, ranging between 13.5 inches and 14.5 inches. It should be noted that the inner diameter, outer diameter, or middle diameter of the edge ring described in this article is formed relative to the central axis passing through the center of mass of the edge ring.
應注意此處描述的邊緣環係可消耗的。舉例而言,在邊緣環的多次使用以用於處理基板之後,邊緣環可能耗損。為了說明,殘餘材料係在用以處理基板的電漿之後輸出,且殘餘材料腐蝕邊緣環。此外,電漿腐蝕邊緣環。It should be noted that the edge ring described here is consumable. For example, the edge ring may wear out after multiple uses to process the substrate. To illustrate, residual material is output after the plasma used to process the substrate, and this residual material corrodes the edge ring. Furthermore, the plasma corrodes the edge ring.
此外,邊緣環係可更換的。舉例而言,在重複使用邊緣環之後,更換邊緣環。為了說明,使用圖3A的壓緊桿302A及302B將邊緣環垂直向上推遠離絕緣體環106(圖2)以自圖1及2的絕緣體環106釋放。邊緣環係接著以另一邊緣環替換。接著使用壓緊桿302A及302B將其他邊緣環朝絕緣體環106垂直向下拉以供處理基板或另一基板。Furthermore, the edge ring is replaceable. For example, after reusing the edge ring, it is replaced. To illustrate, the edge ring is pushed vertically upward away from the insulator ring 106 (Figure 2) using the clamping rods 302A and 302B of Figure 3A to release it from the insulator ring 106 of Figures 1 and 2. The edge ring is then replaced with another edge ring. Then, the other edge ring is pulled vertically downward toward the insulator ring 106 using the clamping rods 302A and 302B for processing a substrate or another substrate.
在一些實施例中,邊緣環228之邊緣的各半徑R1至R7係大於約0.03英吋,以減少朝向邊緣或遠離邊緣之RF功率之電弧放電的可能性。為了進一步說明,邊緣環228之邊緣的各半徑R1至R7的範圍從約0.03英吋(含)至約0.1英吋,以減少朝向邊緣或遠離邊緣之RF功率之電弧放電的可能性。應注意在諸多實施例中,各半徑R1至R7係大於從約0.01英吋(含)至約0.03英吋的範圍。從約0.01英吋(含)至約0.03英吋的半徑減少在半導體晶圓的製造期間之半徑的邊緣碎裂的可能性。In some embodiments, the radii R1 to R7 of the edges of the edge ring 228 are greater than about 0.03 inches to reduce the possibility of arc discharge of RF power toward or away from the edge. To further illustrate, the radii R1 to R7 of the edges of the edge ring 228 range from about 0.03 inches (inclusive) to about 0.1 inches to reduce the possibility of arc discharge of RF power toward or away from the edge. It should be noted that in many embodiments, the radii R1 to R7 are greater than the range of about 0.01 inches (inclusive) to about 0.03 inches. A radius ranging from approximately 0.01 inches (inclusive) to approximately 0.03 inches reduces the likelihood of edge breakage of the radius during semiconductor wafer manufacturing.
在一實施例中,邊緣環228具有複數邊緣。在一實施例中,界定邊緣環228的邊緣係加以圓化。舉例而言,邊緣環228之具有半徑RA及RC(如下面圖9E所示)的邊緣係圓化成約0.03英吋或更大的半徑。已確定當電漿腔室在操作中時,這些邊緣的較低圓化程度可能不足以防止或減少RF功率之電弧放電的可能性。受電漿腔室內較尖銳之特徵部邊緣所影響,電弧放電之可能性的減少可能對在半導體晶圓上及上方執行的製造製程有害。輕微的邊緣圓化(例如小於約0.03英吋的各半徑RA及RC(如下面圖9E所示),各半徑RA及RC(如下面圖9E所示)之範圍從約0.01英吋(含)至約0.03英吋),有助於減少半導體晶圓的製造期間之顆粒產生、或製造期間邊緣碎裂的可能性。因此,儘管在配置於電漿腔室內之特徵部(例如半徑RA及RC(如下面圖9E所示))的表面上執行一些圓化,有鑑於電漿處理操作中所使用之增加的功率位準,此圓化程度係小於用於防止或減少電弧放電的圓化程度。In one embodiment, edge ring 228 has a plurality of edges. In one embodiment, the edges defining edge ring 228 are rounded. For example, the edges of edge ring 228 having radii RA and RC (as shown in Figure 9E below) are rounded to a radius of approximately 0.03 inches or greater. It has been determined that a lower degree of rounding of these edges may be insufficient to prevent or reduce the possibility of arcing of RF power when the plasma chamber is in operation. The reduction in the possibility of arcing due to the sharper feature edges within the plasma chamber may be detrimental to manufacturing processes performed on and over the semiconductor wafer. Slight edge rounding (e.g., less than about 0.03 inches for each radius RA and RC (as shown in Figure 9E below), with each radius RA and RC (as shown in Figure 9E below) ranging from about 0.01 inches (inclusive) to about 0.03 inches) helps reduce the possibility of grain generation or edge fragmentation during semiconductor wafer manufacturing. Therefore, although some rounding is performed on the surface of the features (e.g., radii RA and RC (as shown in Figure 9E below)) disposed within the plasma chamber, given the increased power levels used in the plasma processing operation, this degree of rounding is less than the degree of rounding used to prevent or reduce arc discharge.
圖8D是系統1650之實施例的圖,以說明緊固件122對邊緣環228之耦合。邊緣環228的橫剖面圖係沿圖8A中所示的橫剖面a-a取得。在邊緣環228的底表面1612內鑽孔得到槽125。除了將槽125鑽孔之外,螺紋1652係在槽125的側表面SS上形成。側表面SS係實質垂直的,諸如相對於槽125的頂表面TS垂直或在85°與95°之間的範圍。槽125包圍緊固件孔124A。Figure 8D is a diagram of an embodiment of system 1650 illustrating the coupling of fastener 122 to edge ring 228. A cross-sectional view of edge ring 228 is obtained along cross-section a-a shown in Figure 8A. A groove 125 is formed by drilling within the bottom surface 1612 of edge ring 228. In addition to drilling the groove 125, threads 1652 are formed on the side surface SS of the groove 125. The side surface SS is substantially perpendicular, such as perpendicular to the top surface TS of the groove 125 or within a range of 85° to 95°. The groove 125 surrounds fastener hole 124A.
緊固件122具有在緊固件122的尖端處形成的螺紋1654。此外,緊固件122具有在螺紋1654下方的主體1658。緊固件122的頭部1660係位在主體1658下方。Fastener 122 has a thread 1654 formed at the tip of fastener 122. Furthermore, fastener 122 has a body 1658 below the thread 1654. The head 1660 of fastener 122 is located below the body 1658.
緊固件122係插入至緊固件孔124A且係以順時針方向轉動以使螺紋1654與螺紋1652接合而將支撐環112(圖1)與邊緣環228連接。類似地,額外的緊固件(諸如緊固件122)係插入至多個緊固件孔124B及124C以將支撐環112與邊緣環228連接。多個緊固件孔124B及124C係在邊緣環228之底表面1612內的各個槽中形成。舉例而言,緊固件孔124A-124C在邊緣環228之底表面1612的水平面內形成等邊三角形的頂點。在多於三個緊固件孔係在底表面1612內形成的情況下,緊固件孔係位在實質相等(諸如相等)的距離處。舉例而言,在底表面1612內之一組兩個毗鄰的緊固件孔之間的距離係與在底表面1612內之另一組兩個毗鄰的緊固件孔之間的距離相同。當該組的緊固件孔之其中至少一者係不與另一組之緊固件孔的其中一者相同時,一組的兩個緊固件孔係不同於另一組的兩個緊固件孔。為了說明,兩組不同的緊固件孔具有至少一個不常見的緊固件孔。作為另一示例,在底表面1612內,該組之兩毗鄰緊固件孔之間的距離係在自另一組兩毗鄰緊固件孔之間的距離之預定限度內。當支撐環112係與邊緣環228連接且邊緣環228或支撐環112係加以運動時,邊緣環228及支撐環112在沿y軸的垂直方向上或在沿x軸的水平方向上同時運動。Fastener 122 is inserted into fastener hole 124A and rotated clockwise to engage thread 1654 with thread 1652, thereby connecting support ring 112 (FIG. 1) to edge ring 228. Similarly, additional fasteners (such as fastener 122) are inserted into multiple fastener holes 124B and 124C to connect support ring 112 to edge ring 228. Multiple fastener holes 124B and 124C are formed in grooves within the bottom surface 1612 of edge ring 228. For example, fastener holes 124A-124C form the vertices of an equilateral triangle within the horizontal plane of the bottom surface 1612 of the edge ring 228. When more than three fastener holes are formed within the bottom surface 1612, the fastener holes are located at substantially equal (e.g., equal) distances. For example, the distance between two adjacent fastener holes in one set within the bottom surface 1612 is the same as the distance between two adjacent fastener holes in another set within the bottom surface 1612. When at least one of the fastener holes in one set is not the same as one of the fastener holes in another set, two fastener holes in one set are different from two fastener holes in the other set. For illustration, the two different sets of fastener holes have at least one uncommon fastener hole. As another example, within the bottom surface 1612, the distance between two adjacent fastener holes in one set is within a predetermined limit relative to the distance between two adjacent fastener holes in another set. When the support ring 112 is connected to the edge ring 228 and the edge ring 228 or the support ring 112 is moved, the edge ring 228 and the support ring 112 move simultaneously in the vertical direction along the y-axis or in the horizontal direction along the x-axis.
圖9A係蓋環202之實施例的等角視圖。在一些實施例中,使用蓋環202代替圖2的蓋環201。蓋環202具有頂表面1704。應注意此處描述的蓋環係可消耗的。舉例而言,在處理基板期間多次使用蓋環之後,蓋環可能耗損。為了說明,由於藉由電漿處理基板,故產生殘餘材料且殘餘材料腐蝕蓋環。此外,電漿腐蝕蓋環。Figure 9A is an isometric view of an embodiment of the cover ring 202. In some embodiments, the cover ring 202 is used instead of the cover ring 201 of Figure 2. The cover ring 202 has a top surface 1704. It should be noted that the cover ring described herein is consumable. For example, the cover ring may wear out after being used multiple times during substrate processing. To illustrate, residual material is generated during substrate processing by plasma, and this residual material corrodes the cover ring. Furthermore, the plasma corrodes the cover ring.
此外,蓋環係可更換的。舉例而言,在重複使用蓋環之後,更換蓋環。為了說明,蓋環係自電漿腔室移除以供使用另一蓋環替換。Furthermore, the cover ring is replaceable. For example, after reusing the cover ring, replace it. To illustrate, the cover ring is removed from the plasma chamber for replacement with another cover ring.
圖9B係蓋環202之實施例的底視圖。蓋環具有底表面1705。Figure 9B is a bottom view of an embodiment of the cover ring 202. The cover ring has a bottom surface 1705.
圖9C係蓋環202之實施例的頂視圖。蓋環202具有內直徑ID2及寬度W1。內直徑ID2係蓋環202之內周緣的直徑。寬度W1係蓋環202的環形體在蓋環202的內直徑ID2與外直徑之間的寬度。Figure 9C is a top view of an embodiment of the cover ring 202. The cover ring 202 has an inner diameter ID2 and a width W1. The inner diameter ID2 is the diameter of the inner periphery of the cover ring 202. The width W1 is the width of the ring shape of the cover ring 202 between the inner diameter ID2 and the outer diameter of the cover ring 202.
圖9D係沿圖9C的橫剖面A-A取得之蓋環202之實施例的橫剖面圖。蓋環202具有垂直定向的內表面1724、另一垂直定向的內表面1720、垂直定向的外表面1716、另一垂直定向的外表面1714、及垂直定向的外表面1710。垂直定向的內表面1724之直徑係ID2。直徑ID2係約13.615英吋。舉例而言,直徑ID2之範圍從約13.4英吋(含)至約13.8英吋。此外,垂直定向的內表面1720之直徑係D1。直徑D1係約13.91英吋。舉例而言,直徑D1之範圍從約13.8英吋(含)至約14英吋。此外,垂直定向的外表面1716之直徑係D2。直徑D2係約14.21英吋。舉例而言,直徑D2之範圍從約14英吋(含)至約14.5英吋。垂直定向的外表面1714之直徑係D3且垂直定向的外表面1710之直徑係OD2。直徑D3係約14.38英吋。舉例而言,直徑D3之範圍從約14.2英吋(含)至約14.5英吋。直徑OD2係約14.7英吋。舉例而言,直徑OD2之範圍從約14英吋(含)至約15英吋。Figure 9D is a cross-sectional view of an embodiment of the cover ring 202 taken along cross section A-A of Figure 9C. The cover ring 202 has a vertically oriented inner surface 1724, another vertically oriented inner surface 1720, a vertically oriented outer surface 1716, another vertically oriented outer surface 1714, and a vertically oriented outer surface 1710. The diameter of the vertically oriented inner surface 1724 is ID2. The diameter ID2 is approximately 13.615 inches. For example, the diameter ID2 ranges from approximately 13.4 inches (inclusive) to approximately 13.8 inches. Furthermore, the diameter of the vertically oriented inner surface 1720 is D1. The diameter D1 is approximately 13.91 inches. For example, the diameter D1 ranges from approximately 13.8 inches (inclusive) to approximately 14 inches. Furthermore, the diameter of the vertically oriented outer surface 1716 is D2. Diameter D2 is approximately 14.21 inches. For example, the range of diameter D2 is from approximately 14 inches (inclusive) to approximately 14.5 inches. The diameter of the vertically oriented outer surface 1714 is D3, and the diameter of the vertically oriented outer surface 1710 is OD2. Diameter D3 is approximately 14.38 inches. For example, the range of diameter D3 is from approximately 14.2 inches (inclusive) to approximately 14.5 inches. The diameter OD2 is approximately 14.7 inches. For example, the range of diameter OD2 is from approximately 14 inches (inclusive) to approximately 15 inches.
直徑D1係大於直徑ID2。此外,直徑D2係大於直徑D1,而直徑D3係大於直徑D2。直徑OD2係大於直徑D3。Diameter D1 is larger than diameter ID2. Furthermore, diameter D2 is larger than diameter D1, and diameter D3 is larger than diameter D2. Diameter OD2 is larger than diameter D3.
圖9E係蓋環202之實施例的橫剖面圖。蓋環202包含上主體部分1730、中間主體部分1732、及下主體部分1734。上主體部分1730具有垂直定向的外表面1710、水平定向的外表面1712、另一水平定向的內表面1722、垂直定向的內表面1724、及水平定向的頂表面1704。彎曲的邊緣1706係在垂直定向的外表面1710與頂表面1704之間形成。彎曲的邊緣1706具有約0.06英吋的半徑RC。舉例而言,半徑RC之範圍從約0.059英吋(含)至約0.061英吋。彎曲的邊緣1706係與頂表面1704及垂直定向的外表面1710鄰接,諸如與頂表面1704及垂直定向的外表面1710接續或毗鄰。Figure 9E is a cross-sectional view of an embodiment of the cover ring 202. The cover ring 202 includes an upper main body portion 1730, a middle main body portion 1732, and a lower main body portion 1734. The upper main body portion 1730 has a vertically oriented outer surface 1710, a horizontally oriented outer surface 1712, another horizontally oriented inner surface 1722, a vertically oriented inner surface 1724, and a horizontally oriented top surface 1704. A curved edge 1706 is formed between the vertically oriented outer surface 1710 and the top surface 1704. The curved edge 1706 has a radius RC of about 0.06 inches. For example, the radius RC ranges from about 0.059 inches (inclusive) to about 0.061 inches. The curved edge 1706 is adjacent to the top surface 1704 and the vertically oriented outer surface 1710, such as being continuous with or adjacent to the top surface 1704 and the vertically oriented outer surface 1710.
垂直定向的外表面1710係與水平定向的外表面1712鄰接。舉例而言,具有半徑RD的曲線係在垂直定向的外表面1710與水平定向的外表面1712之間形成。半徑RD係約0.015英吋。舉例而言,半徑RD之範圍從約0.0145英吋(含)至約0.0155英吋。The vertically oriented outer surface 1710 is adjacent to the horizontally oriented outer surface 1712. For example, a curve with a radius RD is formed between the vertically oriented outer surface 1710 and the horizontally oriented outer surface 1712. The radius RD is approximately 0.015 inches. For example, the radius RD ranges from approximately 0.0145 inches (inclusive) to approximately 0.0155 inches.
此外,水平定向的內表面1722係與垂直定向的內表面1724鄰接。舉例而言,具有半徑RK的曲線係在垂直定向的內表面1724與水平定向的內表面1722之間形成。為了說明,半徑RK係約0.015英吋。作為示例,半徑RK之範圍從約0.0145英吋(含)至約0.0155英吋。Furthermore, the horizontally oriented inner surface 1722 is adjacent to the vertically oriented inner surface 1724. For example, a curve with a radius RK is formed between the vertically oriented inner surface 1724 and the horizontally oriented inner surface 1722. For illustration, the radius RK is approximately 0.015 inches. As an example, the radius RK ranges from approximately 0.0145 inches (inclusive) to approximately 0.0155 inches.
此外,頂表面1704係與垂直定向的內表面1724鄰接。舉例而言,具有半徑RA的曲線係在垂直定向的內表面1724與頂表面1704之間形成。為了說明,半徑RA係約0.015英吋。作為例子,半徑RA之範圍從約0.0145英吋(含)至約0.0155英吋。半徑RA減少蓋環202與邊緣環228間之RF功率之電弧放電的可能性。電弧放電發生在電漿形成於電漿腔室內的期間。Furthermore, the top surface 1704 is adjacent to the vertically oriented inner surface 1724. For example, a curve with radius RA is formed between the vertically oriented inner surface 1724 and the top surface 1704. For illustration, radius RA is approximately 0.015 inches. As an example, the radius RA ranges from approximately 0.0145 inches (inclusive) to approximately 0.0155 inches. Radius RA reduces the possibility of arc discharge of RF power between the cover ring 202 and the edge ring 228. Arc discharge occurs during plasma formation within the plasma chamber.
中間主體部分1732包含垂直定向的內表面1720、垂直定向的外表面1714、及水平定向的外表面1719。垂直定向的外表面1714係與上主體部分1730之水平定向的外表面1712鄰接。舉例而言,具有半徑RE的曲線係在垂直定向的外表面1714與水平定向的外表面1712之間形成。作為示例,半徑RE係約0.03英吋。為了說明,半徑RE之範圍從約0.029英吋(含)至約0.31英吋。The intermediate body portion 1732 includes a vertically oriented inner surface 1720, a vertically oriented outer surface 1714, and a horizontally oriented outer surface 1719. The vertically oriented outer surface 1714 is adjacent to the horizontally oriented outer surface 1712 of the upper body portion 1730. For example, a curve with a radius RE is formed between the vertically oriented outer surface 1714 and the horizontally oriented outer surface 1712. As an example, the radius RE is approximately 0.03 inches. For illustration, the radius RE ranges from approximately 0.029 inches (inclusive) to approximately 0.31 inches.
此外,垂直定向的內表面1720係與上主體部分1730之水平定向的內表面1722鄰接。舉例而言,具有半徑RB的曲線係在水平定向的內表面1722與垂直定向的內表面1720之間形成。作為示例,半徑RB係約0.01英吋。為了說明,半徑RB之範圍從約0.09英吋(含)至約0.011英吋。Furthermore, the vertically oriented inner surface 1720 is adjacent to the horizontally oriented inner surface 1722 of the upper body portion 1730. For example, a curve with a radius RB is formed between the horizontally oriented inner surface 1722 and the vertically oriented inner surface 1720. As an example, the radius RB is approximately 0.01 inches. For illustration, the radius RB ranges from approximately 0.09 inches (inclusive) to approximately 0.011 inches.
水平定向的外表面1719係與垂直定向的外表面1714鄰接。舉例而言,具有半徑RF的曲線係在水平定向的外表面1719與垂直定向的外表面1714之間形成。作為示例,半徑RF係約0.015英吋。為了說明,半徑RF之範圍從約0.0145英吋(含)至約0.0155英吋。The horizontally oriented outer surface 1719 is adjacent to the vertically oriented outer surface 1714. For example, a curve with a radius RF is formed between the horizontally oriented outer surface 1719 and the vertically oriented outer surface 1714. As an example, the radius RF is approximately 0.015 inches. For illustration, the radius RF ranges from approximately 0.0145 inches (inclusive) to approximately 0.0155 inches.
下主體部分1734包含垂直定向的內表面1736、底表面1718、及該垂直定向的外表面1716。垂直定向的內表面1736係與中間主體部分1732之垂直定向的內表面1720鄰接。舉例而言,垂直定向的內表面1720及1736係整合作為一表面且具有相同的直徑D1(圖9D)。垂直定向的內表面1736係與底表面1718鄰接。舉例而言,具有半徑RJ的曲線係在垂直定向的內表面1736與底表面1718之間形成。作為示例,半徑RJ係約0.02英吋。為了說明,半徑RJ之範圍從約0.019英吋(含)至約0.021英吋。The lower body portion 1734 includes a vertically oriented inner surface 1736, a bottom surface 1718, and a vertically oriented outer surface 1716. The vertically oriented inner surface 1736 is adjacent to the vertically oriented inner surface 1720 of the intermediate body portion 1732. For example, the vertically oriented inner surfaces 1720 and 1736 are integrated into a single surface and have the same diameter D1 (FIG. 9D). The vertically oriented inner surface 1736 is adjacent to the bottom surface 1718. For example, a curve with a radius RJ is formed between the vertically oriented inner surface 1736 and the bottom surface 1718. As an example, the radius RJ is approximately 0.02 inches. For illustration, the radius RJ ranges from approximately 0.019 inches (inclusive) to approximately 0.021 inches.
垂直定向的外表面1716係與底表面1718鄰接。舉例而言,具有半徑RH的曲線係在底表面1718與垂直定向的外表面1716之間形成。作為示例,半徑RH係約0.02英吋。為了說明,半徑RH之範圍從約0.019英吋(含)至約0.021英吋。The vertically oriented outer surface 1716 is adjacent to the bottom surface 1718. For example, a curve with a radius RH is formed between the bottom surface 1718 and the vertically oriented outer surface 1716. As an example, the radius RH is approximately 0.02 inches. For illustration, the radius RH ranges from approximately 0.019 inches (inclusive) to approximately 0.021 inches.
垂直定向的外表面1716係與中間主體部分1732之水平定向的外表面1719鄰接。舉例而言,具有半徑RG的曲線係在垂直定向的外表面1716與水平定向的外表面1719之間形成。舉例而言,半徑RG係約0.01英吋。為了說明,半徑RG之範圍從約0.09英吋(含)至約0.011英吋。The vertically oriented outer surface 1716 is adjacent to the horizontally oriented outer surface 1719 of the central body portion 1732. For example, a curve with a radius RG is formed between the vertically oriented outer surface 1716 and the horizontally oriented outer surface 1719. For example, the radius RG is approximately 0.01 inches. For illustration, the radius RG ranges from approximately 0.09 inches (inclusive) to approximately 0.011 inches.
垂直距離dB(諸如沿y軸的距離)係形成於水平定向的內表面1722與頂表面1704之間。作為示例,垂直距離dB係約0.27英吋。為了說明,垂直距離dB之範圍從約0.25英吋(含)至約0.29英吋。The vertical distance dB (such as the distance along the y-axis) is formed between the horizontally oriented inner surface 1722 and the top surface 1704. For example, the vertical distance dB is approximately 0.27 inches. For illustration, the vertical distance dB ranges from approximately 0.25 inches (inclusive) to approximately 0.29 inches.
此外,垂直距離dA係形成於水平定向的外表面1712與水平定向的內表面1722之間。作為示例,距離dA係約0.011英吋。為了說明,距離dA之範圍從約0.009英吋(含)至約0.013英吋。Furthermore, the vertical distance dA is formed between the horizontally oriented outer surface 1712 and the horizontally oriented inner surface 1722. As an example, the distance dA is approximately 0.011 inches. For illustration, the distance dA ranges from approximately 0.009 inches (inclusive) to approximately 0.013 inches.
此外,水平定向的內表面1722與水平定向的外表面1719間的垂直距離係dD。作為示例,距離dD係約0.172英吋。為了說明,距離dD之範圍從約0.17英吋(含)至約0.174英吋。Furthermore, the vertical distance between the horizontally oriented inner surface 1722 and the horizontally oriented outer surface 1719 is dD. For example, the distance dD is approximately 0.172 inches. For illustration, the distance dD ranges from approximately 0.17 inches (inclusive) to approximately 0.174 inches.
此外,水平定向的內表面1722與水平定向的底表面1718間的垂直距離表示為dC。作為示例,距離dC係約0.267英吋。為了說明,距離dC之範圍從約0.265英吋(含)至約0.269英吋。Furthermore, the vertical distance between the horizontally oriented inner surface 1722 and the horizontally oriented bottom surface 1718 is denoted as dC. For example, the distance dC is approximately 0.267 inches. For illustration, the distance dC ranges from approximately 0.265 inches (inclusive) to approximately 0.269 inches.
應注意蓋環202之底表面1705包含水平定向的內表面1722、垂直定向的內表面1720和1736、底表面1718、垂直定向的外表面1716、水平定向的外表面1719、垂直定向的外表面1714、及水平定向的外表面1712。It should be noted that the bottom surface 1705 of the cover ring 202 includes a horizontally oriented inner surface 1722, vertically oriented inner surfaces 1720 and 1736, a bottom surface 1718, a vertically oriented outer surface 1716, a horizontally oriented outer surface 1719, a vertically oriented outer surface 1714, and a horizontally oriented outer surface 1712.
進一步應注意蓋環202的所有邊緣係皆弧形的,諸如彎曲的。舉例而言,半徑RA、RB、RC、RD、RE、RF、RG、RH、RJ、及RK定義弧形的邊緣。It should be noted further that all edges of the cover ring 202 are curved, such as arcuate. For example, radii RA, RB, RC, RD, RE, RF, RG, RH, RJ, and RK define the curved edges.
圖9F係包含邊緣環228、蓋環202、基環210、及接地環212的系統之實施例的橫剖面圖。形成階梯式縮減部1726,其包含在方向上從垂直定向的內表面1724至垂直定向的內表面1720之變化。階梯式縮減部1726係在沿x軸的水平方向上,諸如+x或x方向。階梯式縮減部1726係在上主體部分1730與中間主體部分1732之間。階梯式縮減部1726係在遠離邊緣環228的+x方向上。Figure 9F is a cross-sectional view of an embodiment of a system including an edge ring 228, a cover ring 202, a base ring 210, and a grounding ring 212. A stepped reduction section 1726 is formed, which includes a directional change from a vertically oriented inner surface 1724 to a vertically oriented inner surface 1720. The stepped reduction section 1726 is in a horizontal direction along the x-axis, such as the +x or x direction. The stepped reduction section 1726 is between the upper main body portion 1730 and the middle main body portion 1732. The stepped reduction section 1726 is in the +x direction away from the edge ring 228.
此外,形成另一階梯式縮減部1729,其發生於從垂直定向的外表面1710至垂直定向的外表面1714。再次,階梯式縮減部1729係在水平方向上,諸如x軸的-x方向,除了階梯式縮減部1729係在與階梯式縮減部1726相反的方向之外。階梯式縮減部1729係在朝向邊緣環228的方向上。Furthermore, another stepped reduction section 1729 is formed, which occurs from the vertically oriented outer surface 1710 to the vertically oriented outer surface 1714. Again, the stepped reduction section 1729 is in the horizontal direction, such as the -x direction of the x-axis, except that the stepped reduction section 1729 is in the opposite direction to the stepped reduction section 1726. The stepped reduction section 1729 is in the direction toward the edge ring 228.
形成深度1762,其係從水平定向的內表面1722至中間主體部分1732之水平定向的外表面1719之距離。如此處使用之深度係在y軸的方向上,諸如-y方向。The depth 1762 is formed as the distance from the horizontally oriented inner surface 1722 to the horizontally oriented outer surface 1719 of the central body portion 1732. The depth used here is in the y-axis direction, such as the -y direction.
此外,另一階梯式縮減部1728係自垂直定向的外表面1714至垂直定向的外表面1716形成。階梯式縮減部1728係在-x方向上。Furthermore, another stepped reduction section 1728 is formed from the vertically oriented outer surface 1714 to the vertically oriented outer surface 1716. The stepped reduction section 1728 is in the -x direction.
另一深度1764係形成於水平定向的外表面1719與下主體部分1734的底表面1718之間。深度1764係下主體部分1734的深度。應注意深度1764係小於深度1762。此外,垂直定向的內表面1724之深度係大於深度1762。Another depth 1764 is formed between the horizontally oriented outer surface 1719 and the bottom surface 1718 of the lower main body portion 1734. Depth 1764 is the depth of the lower main body portion 1734. It should be noted that depth 1764 is less than depth 1762. In addition, the depth of the vertically oriented inner surface 1724 is greater than depth 1762.
環形寬度1746係在垂直定向的內表面1720與垂直定向的外表面1714之間產生。如本文使用之環形寬度係沿x軸。此外,另一環形寬度1754係在垂直定向的內表面1736與垂直定向的外表面1716之間產生。環形寬度1754係小於環形寬度1746。The annular width 1746 is generated between the vertically oriented inner surface 1720 and the vertically oriented outer surface 1714. The annular width used herein is along the x-axis. Furthermore, another annular width 1754 is generated between the vertically oriented inner surface 1736 and the vertically oriented outer surface 1716. The annular width 1754 is smaller than the annular width 1746.
可追踪距離1735係在邊緣環228與接地環212之間。可追踪距離1735係沿水平定向的內表面1722之寬度L11、垂直定向的內表面1720和1736之組合長度L12、底表面1718之寬度L13、垂直定向的外表面1716之長度L14、及水平定向的外表面1719之寬度L15。組合長度L12係垂直定向內表面1720之長度及垂直定向內表面1736之長度的總和。可追踪距離1735係自RF功率銷208接收的電壓係沿蓋環202耗散所沿著的路徑。邊緣環228作為電容器的電容器板,而電極EL(圖2)作為電容器的另一電容器板,其中支撐環112的介電材料在兩個電容器板之間。距離1係沿x軸之在邊緣環228與接地環212之間的水平距離,用於耗散由RF功率銷208提供的電壓。The traceable distance 1735 is located between the edge ring 228 and the ground ring 212. The traceable distance 1735 is the width L11 of the horizontally oriented inner surface 1722, the combined length L12 of the vertically oriented inner surfaces 1720 and 1736, the width L13 of the bottom surface 1718, the length L14 of the vertically oriented outer surface 1716, and the width L15 of the horizontally oriented outer surface 1719. The combined length L12 is the sum of the lengths of the vertically oriented inner surfaces 1720 and 1736. The traceable distance 1735 is the path along which the voltage received from the RF power pin 208 is dissipated by the cover ring 202. The edge ring 228 serves as the capacitor plate of the capacitor, while the electrode EL (Figure 2) serves as the other capacitor plate, with the dielectric material of the support ring 112 located between the two capacitor plates. The distance 1 is the horizontal distance along the x-axis between the edge ring 228 and the ground ring 212, used to dissipate the voltage provided by the RF power pin 208.
可追踪距離1735或距離1定義蓋環202的環形寬度。此外,沿可追踪距離1735或距離1的電壓耗散定義蓋環202的環形寬度。蓋環202的環形寬度係蓋環202的內直徑ID2與蓋環202的外直徑OD2之間的差。蓋環202的環形寬度係定義成使得預定量的隔絕電壓係在垂直定向的內表面1724處達成。舉例而言,在7-10伏特係沿蓋環202之千分之一英吋耗散且在垂直定向的內表面1724處之隔絕電壓係5000伏特的條件下,蓋環202的環形寬度係等於5000伏特之倍數(諸如二或三倍)與每千分之一英吋的蓋環202之7-10伏特之耗散的比率。The annular width of the cover ring 202 is defined by a traceable distance of 1735 or 1. Furthermore, the annular width of the cover ring 202 is defined by voltage dissipation along the traceable distance of 1735 or 1. The annular width of the cover ring 202 is the difference between the inner diameter ID2 and the outer diameter OD2 of the cover ring 202. The annular width of the cover ring 202 is defined such that a predetermined isolation voltage is achieved at the vertically oriented inner surface 1724. For example, under the condition that 7-10 volts are dissipated along one-thousandth of an inch of the cover ring 202 and the isolation voltage at the vertically oriented inner surface 1724 is 5000 volts, the ring width of the cover ring 202 is equal to the ratio of a multiple of 5000 volts (such as two or three times) to the 7-10 volts dissipated per one-thousandth of an inch of the cover ring 202.
在一些實施例中,深度1764係大於深度1762。此外,在諸多實施例中,垂直定向的內表面1724之深度係小於深度1762。In some embodiments, depth 1764 is greater than depth 1762. Furthermore, in many embodiments, the depth of the vertically oriented inner surface 1724 is less than depth 1762.
圖9G係包含邊緣環108、蓋環118、基環116、及接地環114之系統之實施例的橫剖面圖。蓋環118包含上主體部分1761、中間主體部分1763、及下主體部分1765。Figure 9G is a cross-sectional view of an embodiment of a system including an edge ring 108, a cover ring 118, a base ring 116, and a grounding ring 114. The cover ring 118 includes an upper main body portion 1761, a middle main body portion 1763, and a lower main body portion 1765.
上主體部分1761包含垂直定向的內表面1782、水平定向的頂表面1766、垂直定向的外表面1768、及水平定向的外表面1770。垂直定向的外表面1768係與頂表面1766鄰接,而水平定向的外表面1770係與垂直定向的外表面1768鄰接。舉例而言,具有半徑的曲線係在垂直定向的外表面1768與頂表面1766之間形成,而具有半徑的曲線係在水平定向的外表面1770與垂直定向的外表面1768之間形成。此外,垂直定向的內表面1782係與頂表面1766鄰接。舉例而言,具有半徑的曲線係在垂直定向的內表面1782與頂表面1766之間形成。The upper body portion 1761 includes a vertically oriented inner surface 1782, a horizontally oriented top surface 1766, a vertically oriented outer surface 1768, and a horizontally oriented outer surface 1770. The vertically oriented outer surface 1768 is adjacent to the top surface 1766, and the horizontally oriented outer surface 1770 is adjacent to the vertically oriented outer surface 1768. For example, a curve with a radius is formed between the vertically oriented outer surface 1768 and the top surface 1766, and a curve with a radius is formed between the horizontally oriented outer surface 1770 and the vertically oriented outer surface 1768. Furthermore, the vertically oriented inner surface 1782 is adjacent to the top surface 1766. For example, a curve with a radius is formed between the vertically oriented inner surface 1782 and the top surface 1766.
中間主體部分1763包含垂直定向的外表面1772、垂直定向的內表面1780、及水平定向的內表面1781。垂直定向的外表面1772係與上主體部分1761之水平定向的外表面1770鄰接。舉例而言,具有半徑的曲線係在垂直定向的外表面1772與水平定向的外表面1770之間形成。The intermediate main body portion 1763 includes a vertically oriented outer surface 1772, a vertically oriented inner surface 1780, and a horizontally oriented inner surface 1781. The vertically oriented outer surface 1772 is adjacent to the horizontally oriented outer surface 1770 of the upper main body portion 1761. For example, a curve with a radius is formed between the vertically oriented outer surface 1772 and the horizontally oriented outer surface 1770.
此外,垂直定向的內表面1780係與垂直定向的內表面1782鄰接,諸如鄰近垂直定向的內表面1782。為了說明,垂直定向的內表面1782位在與垂直定向的內表面1780相同的垂直平面中。Furthermore, the vertically oriented inner surface 1780 is adjacent to, for example, the vertically oriented inner surface 1782. For illustration, the vertically oriented inner surface 1782 is located in the same vertical plane as the vertically oriented inner surface 1780.
水平定向的內表面1781係與垂直定向的內表面1780鄰接。舉例而言,具有半徑的曲線係在水平定向的內表面1781與垂直定向的內表面1780之間形成。The horizontally oriented inner surface 1781 is adjacent to the vertically oriented inner surface 1780. For example, a curve with a radius is formed between the horizontally oriented inner surface 1781 and the vertically oriented inner surface 1780.
下主體部分1765包含垂直定向的外表面1774、水平定向的底表面1776、及垂直定向的內表面1778。垂直定向的內表面1778係與中間主體部分1763之水平定向的內表面1781鄰接。舉例而言,具有半徑的曲線係在垂直定向的內表面1778與水平定向的內表面1781之間形成。The lower main body portion 1765 includes a vertically oriented outer surface 1774, a horizontally oriented bottom surface 1776, and a vertically oriented inner surface 1778. The vertically oriented inner surface 1778 is adjacent to the horizontally oriented inner surface 1781 of the middle main body portion 1763. For example, a curve with a radius is formed between the vertically oriented inner surface 1778 and the horizontally oriented inner surface 1781.
此外,底表面1776係與垂直定向的內表面1778鄰接。舉例而言,具有半徑的曲線係在底表面1776與垂直定向的內表面1778之間形成。Furthermore, the bottom surface 1776 is adjacent to the vertically oriented inner surface 1778. For example, a curve with a radius is formed between the bottom surface 1776 and the vertically oriented inner surface 1778.
此外,底表面1776係與垂直定向的外表面1774鄰接。舉例而言,具有半徑的曲線係在底表面1776與垂直定向的外表面1774之間形成。垂直定向的外表面1774位在與中間主體部分1763之垂直定向的外表面1772相同的垂直平面中。Furthermore, the bottom surface 1776 is adjacent to the vertically oriented outer surface 1774. For example, a curve with a radius is formed between the bottom surface 1776 and the vertically oriented outer surface 1774. The vertically oriented outer surface 1774 is located in the same vertical plane as the vertically oriented outer surface 1772 of the central main body portion 1763.
階梯式縮減部1783係在上主體部分1761之垂直定向的外表面1768與中間主體部分1763之垂直定向的外表面1772之間形成。階梯式縮減部1783係在朝邊緣環108的-x方向上。The stepped reduction section 1783 is formed between the vertically oriented outer surface 1768 of the upper main body portion 1761 and the vertically oriented outer surface 1772 of the middle main body portion 1763. The stepped reduction section 1783 is in the -x direction toward the edge ring 108.
此外,另一階梯式縮減部1784係從中間主體部分1763之垂直定向的內表面1780至中間主體部分1763之水平定向的內表面1781形成。自垂直定向的內表面1780起之階梯式縮減部1784發生在遠離邊緣環108之x軸的+x方向中。Furthermore, another stepped reduction portion 1784 is formed from the vertically oriented inner surface 1780 of the intermediate main body portion 1763 to the horizontally oriented inner surface 1781 of the intermediate main body portion 1763. The stepped reduction portion 1784 from the vertically oriented inner surface 1780 occurs in the +x direction away from the x-axis of the edge ring 108.
環形寬度1786係形成於中間主體部分1763之垂直定向的內表面1780與垂直定向的外表面1772之間。環形寬度1786係沿x軸。此外,另一環形寬度1788係形成於下主體部分1765之垂直定向的內表面1778與垂直定向的外表面1774之間。環形寬度1788係沿x軸。環形寬度1788係小於環形寬度1786。An annular width 1786 is formed between the vertically oriented inner surface 1780 and the vertically oriented outer surface 1772 of the central main body portion 1763. The annular width 1786 is along the x-axis. Furthermore, another annular width 1788 is formed between the vertically oriented inner surface 1778 and the vertically oriented outer surface 1774 of the lower main body portion 1765. The annular width 1788 is along the x-axis. The annular width 1788 is smaller than the annular width 1786.
中間主體部分1763之沿y軸的深度1790係從水平定向的外表面1770至水平定向的內表面1781形成。此外,下主體部分1765之沿y軸之另一深度1792係從水平定向的內表面1781至底表面1776形成。深度1792係小於深度1790。The depth 1790 of the middle main body portion 1763 along the y-axis is formed from the horizontally oriented outer surface 1770 to the horizontally oriented inner surface 1781. Furthermore, another depth 1792 of the lower main body portion 1765 along the y-axis is formed from the horizontally oriented inner surface 1781 to the bottom surface 1776. Depth 1792 is less than depth 1790.
應注意蓋環118的底表面包含表面1781、1778、1776、1774、1772、及1770。It should be noted that the bottom surface of the cover ring 118 includes surfaces 1781, 1778, 1776, 1774, 1772 and 1770.
可追踪距離1794係形成於邊緣環108與接地環114之間。可追踪距離1794係沿著下列者:沿y軸之垂直定向的內表面1780之深度L21、沿x軸之水平定向的內表面1781之寬度L22、垂直定向的內表面1778之深度L23、及底表面1776的寬度L24。深度L23係與深度1792相同。可追踪距離1794係藉由邊緣環108接收的電壓經由支撐環112到達接地環114所沿著的路徑。邊緣環108作為電容器的電容器板,而電極EL(圖2)作為電容器的另一電容器板,其中支撐環112的介電材料在兩個電容器板之間。The traceable distance 1794 is formed between the edge ring 108 and the grounding ring 114. The traceable distance 1794 is along the following: the depth L21 of the vertically oriented inner surface 1780 along the y-axis, the width L22 of the horizontally oriented inner surface 1781 along the x-axis, the depth L23 of the vertically oriented inner surface 1778, and the width L24 of the bottom surface 1776. The depth L23 is the same as the depth 1792. The traceable distance 1794 is the path along which the voltage received by the edge ring 108 reaches the grounding ring 114 via the support ring 112. The edge ring 108 serves as the capacitor plate of the capacitor, while the electrode EL (Figure 2) serves as the other capacitor plate of the capacitor, wherein the dielectric material of the support ring 112 is located between the two capacitor plates.
沿x軸的距離2係形成於邊緣環108與接地環114之間。距離2係小於圖9F的距離1。因為圖9F之邊緣環228的外直徑係小於邊緣環108的外直徑,所以圖9F之蓋環202的上主體部分1730具有比蓋環118之上主體部分1761大的寬度。與上主體部分1761的寬度相比之上主體部分1730的寬度之增加使距離1相較於距離2增加。較大的距離1補償與邊緣環108相比之邊緣環228之減少的寬度,以針對由功率銷208(圖2)供應之RF訊號的RF電壓提供預定量的距離,以經由可追踪距離213(圖2)或1735(圖9F)穿越至接地環212。舉例而言,每千分之一英吋的蓋環有約7至約10伏特的損失。若5000 V之預定的隔絕電壓將在蓋環之上主體部分之垂直定向的內表面處達到,則蓋環之上主體部分的環形寬度係加以計算為(正實數 X 5000)/(每千分之一英吋之蓋環的伏特損失),其中「正實數」係倍數,諸如2或3或4的。The distance 2 along the x-axis is formed between the edge ring 108 and the grounding ring 114. Distance 2 is smaller than distance 1 in Figure 9F. Because the outer diameter of the edge ring 228 in Figure 9F is smaller than the outer diameter of the edge ring 108, the upper main body portion 1730 of the cover ring 202 in Figure 9F has a wider width than the upper main body portion 1761 of the cover ring 118. The increase in the width of the upper main body portion 1730 compared to the width of the upper main body portion 1761 causes distance 1 to increase relative to distance 2. The larger distance 1 compensates for the reduced width of the edge ring 228 compared to the edge ring 108, providing a predetermined distance for the RF voltage of the RF signal supplied by the power pin 208 (FIG. 2) to cross to the ground ring 212 via the traceable distance 213 (FIG. 2) or 1735 (FIG. 9F). For example, there is a loss of about 7 to about 10 volts per thousandth of an inch of cover ring. If a predetermined isolation voltage of 5000 V is to be reached at the vertically oriented inner surface of the main body portion above the cover ring, then the ring width of the main body portion above the cover ring is calculated as (positive real number x 5000) / (volt loss per thousandth of an inch of cover ring), where "positive real number" is a multiple, such as 2, 3, or 4.
在一些實施例中,深度1792係大於深度1790。In some implementations, depth 1792 is greater than depth 1790.
本文描述的實施例可利用諸多電腦系統配置實施,該等諸多電腦系統配置包含手持硬體單元、微處理器系統、基於微處理器或可程式化的消費者電子產品、迷你電腦、大型電腦等。該等實施例亦可在分散的計算環境中實施,在該分散的計算環境中,任務係藉由經由網路鏈接的遠程處理硬體單元執行。The embodiments described herein can be implemented using a variety of computer system configurations, including handheld hardware units, microprocessor systems, microprocessor-based or programmable consumer electronics products, minicomputers, mainframes, etc. These embodiments can also be implemented in distributed computing environments where tasks are executed by remote processing hardware units connected via a network link.
在一些實施例中,此處描述的控制器為系統的一部分,其可為上述例子的一部分。此等系統包括半導體處理設備,其包含處理工具或複數處理工具、腔室或複數腔室、用於處理的平臺或複數平臺、及/或特定處理元件(晶圓基座、氣流系統等)。這些系統係與電子設備整合,該等電子設備用於在半導體晶圓或基板處理之前、期間、及之後控制這些系統的操作。電子設備係稱作為「控制器」,其可控制系統或複數系統之諸多元件或子部分。依據系統的處理需求及/或類型,控制器係加以編程以控制此處揭示的任何製程,包含:處理氣體的遞送、溫度設定(例如加熱及/或冷卻)、壓力設定、真空設定、功率設定、RF產生器設定、RF匹配電路設定、頻率設定、流率設定、流體遞送設定、位置及操作設定、出入一工具和其他轉移工具及/或與系統耦接或介接的裝載鎖定部之晶圓轉移。In some embodiments, the controller described herein is part of a system, which may be part of the examples above. These systems include semiconductor processing equipment comprising processing tools or multiple processing tools, chambers or multiple chambers, platforms or multiple platforms for processing, and/or specific processing elements (wafer davits, airflow systems, etc.). These systems are integrated with electronic devices used to control the operation of these systems before, during, and after semiconductor wafer or substrate processing. The electronic devices are referred to as "controllers" and can control various elements or sub-parts of the system or multiple systems. Depending on the system's processing requirements and/or type, the controller is programmed to control any processes disclosed herein, including: gas delivery, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, entry and exit of tools and other transfer tools and/or wafer transfer of loading locks coupled to or interfaced with the system.
廣義地說,在諸多實施例中,控制器係定義為具有接收指令、發布指令、控制操作、啟用清潔操作、啟用端點量測等之諸多積體電路、邏輯、記憶體、及/或軟體的電子設備。積體電路包含儲存程式指令之韌體形式的晶片、數位訊號處理器(DSP)、定義為ASIC的晶片、PLD、及/或執行程式指令(例如軟體)的一或更多微處理器或微控制器。該等程式指令係以諸多個別設定(或程式檔案)之形式與控制器通訊的指令,該等設定針對半導體晶圓或系統定義用於執行特殊製程的參數、因子、變數等。在一些實施例中,該等程式指令係由製程工程師定義之配方的部分,以在一或更多層、材料、金屬、氧化物、矽、二氧化矽、表面、電路、及/或晶圓的晶粒製造期間完成一或更多處理步驟。In a broad sense, in many embodiments, a controller is defined as an electronic device comprising various integrated circuits, logic, memory, and/or software that have functions such as receiving instructions, issuing instructions, controlling operations, enabling cleanup operations, and enabling endpoint measurements. Integrated circuits include chips in firmware form that store program instructions, digital signal processors (DSPs), chips defined as ASICs, PLDs, and/or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). These program instructions are instructions that communicate with the controller in the form of various individual settings (or program files), which define parameters, factors, variables, etc., for the semiconductor wafer or system to perform specific processes. In some embodiments, these program instructions are part of a formulation defined by a process engineer to complete one or more processing steps during the die fabrication of one or more layers, materials, metals, oxides, silicon, silica, surfaces, circuits, and/or wafers.
在一些實施例中,控制器係電腦的一部分或耦接至電腦,該電腦係與系統整合、耦接至系統、以其他方式網路連至系統、或以上方式組合。舉例而言,控制器係在「雲端」或晶圓廠主機電腦系統的整體或部分,允許晶圓處理的遠端存取。該電腦可允許針對系統的遠端存取以監測製造操作的當前進度、檢查過往製造操作的歷史、檢查來自複數製造操作的趨勢或性能度量,以改變目前處理的參數、以設定目前操作之後的處理步驟或新的製程。In some embodiments, the controller is part of or coupled to a computer that is integrated with, coupled to, or otherwise networked to the system, or a combination of the above. For example, the controller may be part or in whole of a cloud or wafer fab mainframe computer system, allowing remote access to wafer processing. The computer may allow remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations to change parameters of the current processing, or set up processing steps or new processes after the current operation.
在一些實施例中,遠程電腦(例如伺服器)經由網路提供製程配方給系統,該網路包含區域網路或網際網路。遠程電腦包含使用者介面,其允許參數及/或設定的輸入或編程,這些參數及/或設定係接著從遠程電腦被傳遞至系統。在一些例子中,控制器接收數據形式的指令,該數據明確指定於一或更多個操作期間將執行之各個處理步驟的參數、因子、及/或變數。應理解參數、因子、及/或變數係專門用於將執行之製程的類型及控制器受配置所介接或控制之工具的類型。因此,如上所述,控制器係分散式的,諸如藉由包含一或更多個分散的控制器,其由網路連在一起且朝共同的目的(諸如此處描述的製程及控制)作業。一個用於此等目的之分散式控制器的例子包含腔室中的一或更多積體電路,其連通位於遠端(諸如在平台級或作為遠程電腦的一部分)之一或更多積體電路,而結合以控制腔室中的製程。In some embodiments, a remote computer (e.g., a server) provides process recipes to the system via a network, including a local area network or the Internet. The remote computer includes a user interface that allows the input or programming of parameters and/or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that explicitly specifies parameters, factors, and/or variables for each processing step to be performed during one or more operations. It should be understood that the parameters, factors, and/or variables are specifically used to describe the type of process to be performed and the type of tool the controller is configured to access or control. Therefore, as described above, the controller is distributed, for example by comprising one or more distributed controllers connected together by a network and operating towards a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes includes one or more integrated circuits in a chamber that are connected to one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) in combination to control the process in the chamber.
不受限制地,在諸多實施例中,應用該等方法的示例系統包含電漿蝕刻腔室或模組、沉積腔室或模組、旋轉-潤洗腔室或模組、金屬電鍍腔室或模組、清潔腔室或模組、斜邊蝕刻腔室或模組、物理氣相沉積(PVD)腔室或模組、化學氣相沉積(CVD)腔室或模組、原子層沉積(ALD)腔室或模組、原子層蝕刻(ALE)腔室或模組、電漿加強化學氣相沉積(PECVD)腔室或模組、清潔類型腔室或模組、離子植入腔室或模組、軌道腔室或模組、及任何關聯或使用於半導體晶圓的製造及/或生產中之其他的半導體處理系統。Unrestricted, in many embodiments, example systems applying these methods include plasma etching chambers or modules, deposition chambers or modules, spin-wetting chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, etc. Atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, plasma enhanced chemical vapor deposition (PECVD) chambers or modules, clean-type chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems associated with or used in the fabrication and/or production of semiconductor wafers.
進一步注意在一些實施例中,上述操作可應用於一些類型的電漿腔室,例如:包含感應耦合電漿(ICP)反應器、變壓器耦合電漿反應器、導體工具、介電工具的電漿腔室;包含電子迴旋共振(ECR)反應器的電漿腔室等。舉例而言,一或更多RF產生器係耦接至在ICP反應器內的電感器。電感器之形狀的例子包含螺線管(solenoid)、圓頂形線圈、扁平形線圈等。It should be noted that in some embodiments, the above operations can be applied to certain types of plasma chambers, such as plasma chambers containing inductively coupled plasma (ICP) reactors, transformer-coupled plasma reactors, conductor tools, dielectric tools, etc.; plasma chambers containing electron cyclotron resonator (ECR) reactors, etc. For example, one or more RF generators are coupled to an inductor within the ICP reactor. Examples of inductor shapes include solenoids, dome-shaped coils, flat coils, etc.
如上所述,依據將由工具執行的製程步驟或複數製程步驟,主機電腦與下列其中一者以上通訊:其他工具電路或模組、其他工具元件、群組工具、其他工具介面、毗鄰工具、相鄰工具、位於工廠各處的工具、主電腦、另一控制器、或用於材料傳送的工具,該等用於材料傳送的工具將晶圓的容器攜帶進出半導體生產工廠內的工具位置及/或負載端。As described above, depending on the process steps or multiple process steps to be performed by the tool, the host computer communicates with one or more of the following: other tool circuits or modules, other tool elements, group tools, other tool interfaces, adjacent tools, neighboring tools, tools located at various locations in the factory, the host computer, another controller, or tools for material transport that carry the wafer container to and from tool locations and/or load terminals within the semiconductor manufacturing plant.
在考慮上述實施例後,應理解一些實施例使用涉及儲存於電腦系統內之資料之諸多可利用電腦實現的操作。這些操作係那些物理性操縱的物理量。任何此處描述之形成該等實施例之部分的操作係有用的機械操作。Having considered the foregoing embodiments, it should be understood that some embodiments utilize numerous computer-implementable operations involving data stored within a computer system. These operations are physical quantities that are physically manipulated. Any operations described herein that form part of such embodiments are useful mechanical operations.
一些實施例亦關於用於執行這些操作的硬體單元或設備。該設備係針對特殊用途電腦而特別建構。當被界定成特殊用途電腦時,該電腦執行非為特殊用途之部分的其他處理、程式執行或常用程式,但仍然能夠針對特殊用途而操作。Some embodiments also relate to hardware units or devices used to perform these operations. The device is specifically constructed for a special purpose computer. When defined as a special purpose computer, the computer performs other processing, program execution, or common programs that are not part of the special purpose, but is still able to operate for the special purpose.
在一些實施例中,該等操作可藉由電腦處理,該電腦係藉由儲存在電腦記憶體、快取記憶體中或透過電腦網路獲得的一或更多電腦程式選擇性地啟動或配置。當資料係透過電腦網路獲得時,該資料可藉由在電腦網路上的其他電腦(例如雲端計算資源)處理。In some embodiments, these operations can be processed by a computer selectively started or configured by one or more computer programs stored in computer memory, cache memory, or obtained through a computer network. When data is obtained through a computer network, the data can be processed by other computers on the computer network (e.g., cloud computing resources).
一或更多實施例亦可被製作成在非暫態電腦可讀媒體上的電腦可讀碼。該非暫態電腦可讀媒體係儲存資料的任何資料儲存硬體單元(例如記憶體裝置等),該資料之後係藉由電腦系統讀取。非暫態電腦可讀媒體的示例包含硬碟、網路附接儲存器(NAS)、ROM、RAM、光碟ROM(CD-ROM)、可錄式光碟(CD-R)、可讀寫式光碟(CD-RW)、磁帶及其他光學和非光學資料儲存硬體單元。在一些實施例中,該非暫態電腦可讀媒體包含分散在網路耦接電腦系統的電腦可讀實體媒體,使得電腦可讀碼係以分散的方式儲存及執行。One or more embodiments may also be made into computer-readable code on a non-transient computer-readable medium. The non-transient computer-readable medium is any data storage hardware unit (e.g., a memory device) that stores data which is subsequently read by a computer system. Examples of non-transient computer-readable media include hard drives, network attached storage (NAS), ROM, RAM, optical disc ROM (CD-ROM), recordable optical disc (CD-R), rewritable optical disc (CD-RW), magnetic tape, and other optical and non-optical data storage hardware units. In some embodiments, the non-transient computer-readable media includes computer-readable physical media distributed across network-coupled computer systems, such that the computer-readable code is stored and executed in a distributed manner.
雖然以上方法操作係以特定順序描述,但應理解在諸多實施例中,其他內務處理作業係在操作之間執行、或該等方法操作係調整成使得該等操作發生在略微不同的時間點、或在允許該等方法操作發生在各種時距內的系統中分散、或以不同於上述的順序執行。Although the above methods are described in a specific order, it should be understood that in many embodiments, other housekeeping operations are performed between operations, or the methods are adjusted so that the operations occur at slightly different points in time, or are distributed in systems that allow the methods to occur within various time intervals, or are performed in a different order than described above.
更應注意在一實施例中,來自上述任何實施例的一或更多特徵係與任何其他實施例的一或更多特徵結合而不背離在本揭示內容內所述之諸多實施例中描述的範圍。It should be noted that in one embodiment, one or more features from any of the foregoing embodiments are combined with one or more features from any other embodiment without departing from the scope described in the various embodiments described in this disclosure.
雖然上述實施例為了清楚理解的目的已以一些細節描述,但將顯而易見,若干改變與修飾可在隨附申請專利範圍之範疇內實施。因此,本發明實施例應視為說明性而非限制性,且該等實施例不限於此處提供的細節。Although the embodiments described above have been described in detail for clarity of understanding, it will be apparent that various modifications and alterations may be made within the scope of the appended patent application. Therefore, the embodiments of the present invention should be regarded as illustrative rather than restrictive, and such embodiments are not limited to the details provided herein.
100:系統 104:卡盤 106:絕緣體環 108:邊緣環 110A:膠體層 110B:膠體層 110C:膠體層 112:支撐環 114:接地環 116:基環 118:蓋環 122:緊固件 124A:緊固件孔 124B:緊固件孔 124C:緊固件孔 125:槽 132A:通孔 200:系統 201:蓋環 202:蓋環 203:內表面 204:O形環 206:功率銷饋通部 208:功率銷 210:基環 212:接地環 213:可追踪距離 214:O形環 216A:安裝座 218:缽狀體 224:設備板 228:邊緣環 230:絕緣體壁 300:系統 302A:壓緊桿 302B:壓緊桿 308:底表面 330:槽 332:接收器 604A:安裝座 900:系統 902:肩螺釘 906:按壓連接器 908:螺紋適配器 910:螺釘 912:氣缸 914:空氣配件 914A:空氣配件 914B:空氣配件 916:活塞體 918:活塞桿 920A:扣緊機構 920B:扣緊機構 920C:扣緊機構 922:活塞 924:邊緣環 930:中心開口 931:槽 932:螺紋 934:螺紋 1100:系統 1102A:空氣路線 1102B:空氣路線 1104A:上部 1104B:下部 1104C:上部 1104D:下部 1104E:上部 1104F:下部 1106A:管 1106B:管 1106C:管 1106D:管 1106E:管 1106F:管 1106G:管 1106H:管 1106I:管 1106J:管 1150:系統 1200:系統 1202A:空氣壓縮器 1202B:空氣壓縮器 1204A:調節器 1204B:調節器 1206A:孔口 1206B:孔口 1604:頂表面 1606:內表面 1608:內表面 1610:內表面 1612:底表面 1614:外表面 1616:彎曲的邊緣 1618:內表面 1620:內表面 1622:台階 1650:系統 1652:螺紋 1654:螺紋 1658:主體 1660:頭部 1704:頂表面 1705:底表面 1706:彎曲的邊緣 1710:外表面 1712:外表面 1714:外表面 1716:外表面 1718:底表面 1719:外表面 1720:內表面 1722:內表面 1724:內表面 1726:階梯式縮減部 1728:階梯式縮減部 1729:階梯式縮減部 1730:上主體部分 1732:中間主體部分 1734:下主體部分 1735:可追踪距離 1736:內表面 1746:環形寬度 1754:環形寬度 1761:上主體部分 1762:深度 1763:中間主體部分 1764:深度 1765:下主體部分 1766:頂表面 1768:外表面 1770:外表面 1772:外表面 1774:外表面 1776:底表面 1778:內表面 1780:內表面 1781:內表面 1782:內表面 1783:階梯式縮減部 1784:階梯式縮減部 1786:環形寬度 1788:環形寬度 1790:深度 1792:深度 1794:可追踪距離 A1:角度 A2:角度 C1:連接器 C2:連接器 C3:連接器 C4:連接器 D1:直徑 D2:直徑 D3:直徑 d1:距離 d2:長度 d3:距離 dA:距離 dB:距離 dC:距離 dD:距離 EL:電極 ID:內直徑 ID1:內直徑 ID2:(內)直徑 L1:位置 L2:位置 L11:寬度 L12:長度 L13:寬度 L14:長度 L15:寬度 L21:深度 L22:寬度 L23:深度 L24:寬度 MD:中間直徑 OD:外直徑 OD1:外直徑 OD2:(外)直徑 P1:部分 P2:部分 P3:部分 P4:部分 P5:部分 P6:部分 PR1:頂部部分 PR2:中間部分 PRTN1:頂部部分 R1:半徑 R2:半徑 R3:半徑 R4:半徑 R5:半徑 R6:半徑 R7:半徑 RA:半徑 RB:半徑 RC:半徑 RD:半徑 RE:半徑 RF:半徑 RG:半徑 RH:半徑 RJ:半徑 RK:半徑 SS:側表面 TS:頂表面 W1:寬度 100: System 104: Chuck 106: Insulator Ring 108: Edge Ring 110A: Colloid Layer 110B: Colloid Layer 110C: Colloid Layer 112: Support Ring 114: Grounding Ring 116: Base Ring 118: Cover Ring 122: Fastener 124A: Fastener Hole 124B: Fastener Hole 124C: Fastener Hole 125: Groove 132A: Through Hole 200: System 201: Cover Ring 202: Cover Ring 203: Inner Surface 204: O-ring 206: Power feed pin 208: Power pin 210: Base ring 212: Grounding ring 213: Trackable distance 214: O-ring 216A: Mounting bracket 218: Bowl-shaped body 224: Equipment plate 228: Edge ring 230: Insulator wall 300: System 302A: Clamping rod 302B: Clamping rod 308: Bottom surface 330: Slot 332: Receiver 604A: Mounting bracket 900: System 902: Shoulder screw 906: Press-fit connector 908: Thread Adapter 910: Screw 912: Cylinder 914: Air Components 914A: Air Components 914B: Air Components 916: Piston Body 918: Piston Rod 920A: Locking Mechanism 920B: Locking Mechanism 920C: Locking Mechanism 922: Piston 924: Edge Ring 930: Center Opening 931: Groove 932: Thread 934: Thread 1100: System 1102A: Air Path 1102B: Air Path 1104A: Upper Part 1104B: Lower Part 1104C: Upper Part 1104D: Lower Part 1104E: Upper part 1104F: Lower part 1106A: Pipe 1106B: Pipe 1106C: Pipe 1106D: Pipe 1106E: Pipe 1106F: Pipe 1106G: Pipe 1106H: Pipe 1106I: Pipe 1106J: Pipe 1150: System 1200: System 1202A: Air compressor 1202B: Air compressor 1204A: Regulator 1204B: Regulator 1206A: Orifice 1206B: Orifice 1604: Top surface 1606: Inner surface 1608: Inner surface 1610: Inner surface 1612: Bottom Surface 1614: Outer Surface 1616: Curved Edge 1618: Inner Surface 1620: Inner Surface 1622: Step 1650: System 1652: Thread 1654: Thread 1658: Main Body 1660: Head 1704: Top Surface 1705: Bottom Surface 1706: Curved Edge 1710: Outer Surface 1712: Outer Surface 1714: Outer Surface 1716: Outer Surface 1718: Bottom Surface 1719: Outer Surface 1720: Inner Surface 1722: Inner Surface 1724: Inner Surface 1726: Stepped Reduction Section 1728: Stepped Reduction Section 1729: Stepped Reduction Section 1730: Upper Main Body 1732: Middle Main Body 1734: Lower Main Body 1735: Trackable Distance 1736: Inner Surface 1746: Circular Width 1754: Circular Width 1761: Upper Main Body 1762: Depth 1763: Middle Main Body 1764: Depth 1765: Lower Main Body 1766: Top Surface 1768: Outer Surface 1770: Outer Surface 1772: Outer Surface 1774: Outer Surface 1776: Bottom Surface 1778: Inner Surface 1780: Inner Surface 1781: Inner Surface 1782: Inner Surface 1783: Stepped Reduction Section 1784: Stepped Reduction Section 1786: Circular Width 1788: Circular Width 1790: Depth 1792: Depth 1794: Trackable Distance A1: Angle A2: Angle C1: Connector C2: Connector C3: Connector C4: Connector D1: Diameter D2: Diameter D3: Diameter d1: Distance d2: Length d3: Distance dA: Distance dB: Distance dC: Distance dD: Distance EL: Electrode ID: Inner Diameter ID1: Inner Diameter ID2: (Inner) Diameter L1: Position L2: Position L11: Width L12: Length L13: Width L14: Length L15: Width L21: Depth L22: Width L23: Depth L24: Width MD: Center Diameter OD: Outer Diameter OD1: Outer Diameter OD2: (Outer) Diameter P1: Part P2: Part P3: Part P4: Part P5: Part P6: Part PR1: Top Part PR2: Middle Part PRTN1: Top Part R1: Radius R2: Radius R3: Radius R4: Radius R5: Radius R6: Radius R7: Radius RA: Radius RB: Radius RC: Radius RD: Radius RE: Radius RF: Radius RG: Radius RH: Radius RJ: Radius RK: Radius SS: Side Surface TS: Top Surface W1: Width
該等實施例可藉由參照以下結合附圖的敘述而受到最佳理解。These embodiments can be best understood by referring to the following description in conjunction with the accompanying figures.
圖1是系統之實施例的圖,以說明將邊緣環固定至支撐環的方式。Figure 1 is a diagram of an embodiment of the system to illustrate how the edge ring is fixed to the support ring.
圖2是系統之實施例的圖,以說明功率銷對支撐環的耦合。Figure 2 is a diagram of an embodiment of the system to illustrate the coupling of the power pin to the support ring.
圖3A是系統之實施例的圖,以說明將多個壓緊桿(hold down rod)連接至支撐環的多個位置。Figure 3A is a diagram of an embodiment of the system, illustrating the connection of multiple hold-down rods to multiple locations of the support ring.
圖3B係說明壓緊桿與支撐環之底表面之耦接的等角視圖。Figure 3B is an isometric view illustrating the coupling between the clamping rod and the bottom surface of the support ring.
圖4係用於將邊緣環及支撐環固定至絕緣體環之系統之實施例的側視圖。Figure 4 is a side view of an embodiment of a system for fixing edge rings and support rings to an insulating ring.
圖5係扣緊機構之實施例的等角視圖。Figure 5 is an isometric view of an embodiment of the fastening mechanism.
圖6A是系統之實施例的圖,用於說明壓緊桿的同步下拉。Figure 6A is a diagram of an embodiment of the system used to illustrate the synchronous pull-down of the clamping lever.
圖6B是系統之實施例的圖,用於說明壓緊桿的同步上推。Figure 6B is a diagram of an embodiment of the system, used to illustrate the synchronous upward push of the clamping lever.
圖7是系統之實施例的方塊圖,以說明將空氣供應至多個扣緊機構。Figure 7 is a block diagram of an embodiment of the system to illustrate the supply of air to multiple fastening mechanisms.
圖8A係邊緣環之實施例的等角視圖。Figure 8A is an isometric view of an embodiment of the edge ring.
圖8B係圖8A的邊緣環之實施例的頂視圖。Figure 8B is a top view of an embodiment of the edge ring of Figure 8A.
圖8C係圖8B之邊緣環的橫剖面圖。Figure 8C is a cross-sectional view of the edge ring of Figure 8B.
圖8D是系統之實施例的圖,以說明緊固件對圖8A之邊緣環的耦合。Figure 8D is a diagram of an embodiment of the system to illustrate the coupling of the fastener to the edge ring of Figure 8A.
圖9A係蓋環之實施例的等角視圖。Figure 9A is an isometric view of an embodiment of the cover ring.
圖9B係圖9A之蓋環之實施例的底視圖。Figure 9B is a bottom view of an embodiment of the cover ring of Figure 9A.
圖9C係圖9A之蓋環之實施例的頂視圖。Figure 9C is a top view of an embodiment of the cover ring of Figure 9A.
圖9D係圖9C之蓋環之實施例的橫剖面圖。Figure 9D is a cross-sectional view of an embodiment of the cover ring of Figure 9C.
圖9E係圖9A之蓋環之實施例的橫剖面圖。Figure 9E is a cross-sectional view of an embodiment of the cover ring of Figure 9A.
圖9F係圖9A之蓋環之實施例的橫剖面圖。Figure 9F is a cross-sectional view of an embodiment of the cover ring of Figure 9A.
圖9G係蓋環之實施例的橫剖面圖。Figure 9G is a cross-sectional view of an embodiment of the cover ring.
228:邊緣環 228: Peripheral Ring
1604:頂表面 1604: Top surface
1606:內表面 1606: Inner surface
1608:內表面 1608: Inner Surface
1610:內表面 1610: Inner surface
1612:底表面 1612: Bottom surface
1614:外表面 1614: Outer surface
1616:彎曲的邊緣 1616: The Curved Edge
1618:內表面 1618: Inner surface
1620:內表面 1620: Inner surface
1622:台階 1622: Steps
A1:角度 A1:Angle
A2:角度 A2: Angle
d1:距離 d1: distance
d2:長度 d2: Length
d3:距離 d3: distance
ID1:內直徑 ID1: Inner Diameter
MD:中間直徑 MD: Center Diameter
OD1:外直徑 OD1: Outer Diameter
R1:半徑 R1: Radius
R2:半徑 R2: Radius
R3:半徑 R3: Radius
R4:半徑 R4: Radius
R5:半徑 R5: Radius
R6:半徑 R6: Radius
R7:半徑 R7: Radius
Claims (87)
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| TW113138414A TWI903800B (en) | 2017-12-15 | 2017-12-15 | Ring structures and systems for use in a plasma chamber |
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| TW113138414A TWI903800B (en) | 2017-12-15 | 2017-12-15 | Ring structures and systems for use in a plasma chamber |
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| TW202520795A TW202520795A (en) | 2025-05-16 |
| TWI903800B true TWI903800B (en) | 2025-11-01 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100163186A1 (en) * | 2007-03-30 | 2010-07-01 | Tooru Aramaki | Plasma Processing Apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100163186A1 (en) * | 2007-03-30 | 2010-07-01 | Tooru Aramaki | Plasma Processing Apparatus |
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