TWI903871B - Semiconductor device measurement method and system thereof - Google Patents

Abstract

A semiconductor device measurement method and a system thereof are provided. The semiconductor device measurement method is used to measure a pitch height between a semiconductor device and a substrate, wherein the semiconductor device has a metal layer and a plurality of output terminals connected to the metal layer, and the plurality of output terminals are connected to the substrate. The semiconductor device measurement method includes: measuring a first height between a top surface of the semiconductor device and the substrate; measuring a thickness of the semiconductor layer in the semiconductor device based on infrared light to obtain a second height between the top surface of the semiconductor device and a top surface of the metal layer; and obtaining the pitch height based on the first height, the second height, and the thickness of the metal layer, wherein the pitch height is a pitch between a bottom surface of the metal layer and the substrate.

Description

Semiconductor Device Measurement Methods and Systems

This invention relates to a semiconductor device measurement method and system, and more particularly to a semiconductor device measurement method and system that measures the chip structure dimensions and then fills in an appropriate amount of primer.

In the flip chip process, a chip is bonded to a substrate using multiple solder balls, with a vertical gap between the substrate and the chip. An underfill is then applied between the chip and the substrate to increase the adhesion between them and to act as a buffer against thermal expansion.

When there is too much primer, it will overflow or even cover the top surface of the chip. When there is too little primer, it will not be able to improve the adhesion between the chip and the substrate. Therefore, in order to fill with the appropriate amount of primer, it is necessary to calculate the amount of primer to fill.

However, conventional techniques are prone to errors in wafer thickness. Although manufactured wafers are all within a certain thickness range, errors still exist. This is because the wafer's thickness is affected by the polishing process, making it impossible to determine precisely. Consequently, the standoff height (SOH) between the wafer and the substrate also cannot be accurately determined. As wafer structures become increasingly finer, even micron-level errors significantly impact the amount of adhesive filler required.

Therefore, how to improve the measurement process to accurately control the amount of primer filling and overcome the defects caused by insufficient or excessive primer has become one of the important issues that this industry wants to solve.

The technical problem to be solved by this invention is to provide a semiconductor device measurement method and system to address the shortcomings of existing technologies.

To solve the above-mentioned technical problems, one of the technical solutions adopted by the present invention is to provide a semiconductor device measurement method for measuring a distance height between a semiconductor device and a substrate, wherein the semiconductor device has a metal layer and a plurality of output terminals connected to the metal layer, and the output terminals are connected to the substrate. The semiconductor device measurement method includes: measuring a first height between the top surface of the semiconductor device and the substrate; measuring the thickness of the semiconductor layer in the semiconductor device based on infrared light to obtain a second height between the top surface of the semiconductor device and the top surface of the metal layer; and obtaining the distance height based on the first height, the second height, and the thickness of the metal layer, wherein the distance height is the distance between the bottom surface of the metal layer and the substrate.

To solve the aforementioned technical problems, another technical solution adopted by the present invention is to provide a semiconductor device measurement system for measuring a distance height between a semiconductor device and a substrate, wherein the semiconductor device has a metal layer and a plurality of output terminals connected to the metal layer, and the output terminals are connected to the substrate. The semiconductor device measurement system includes a stage, a measuring device, and an analyzing device. The stage is used to support the substrate and the semiconductor device. The measuring device is configured to measure a first height between the top surface of the semiconductor device and the substrate, and to measure the thickness of the semiconductor layer within the semiconductor device based on infrared light, so as to obtain a second height between the top surface of the semiconductor device and the top surface of the metal layer. The analysis device is configured to obtain the spacing height based on the first height, the second height, and the thickness of the metal layer, wherein the spacing height is the distance between the bottom surface of the metal layer and the substrate.

One of the advantages of this invention is that the semiconductor device measurement method and system provided by this invention can overcome the problem of excessive or insufficient filling of primer caused by individual differences in chip structure in the past by "obtaining the spacing height between the substrate and the metal layer" and "calculating the estimated amount of filler based on the spacing height and the number of multiple output terminals".

To further understand the features and technical content of this invention, please refer to the following detailed description and drawings of this invention. However, the drawings provided are for reference and illustration only and are not intended to limit this invention.

The following specific embodiments illustrate the implementation of the "Measuring Method and System for Semiconductor Devices" disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. Furthermore, the accompanying drawings of this invention are for simple illustrative purposes only and are not depictions based on actual dimensions, as stated in advance. The following embodiments will further explain the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention. Additionally, the term "or" as used in this article should be interpreted as, depending on the context, as may include any one or more of the related listed items.

Please refer to Figures 1 to 5, which are respectively a functional block diagram of the semiconductor device measurement system of the present invention, a structural schematic diagram of the semiconductor device measurement system, a flowchart of the semiconductor device measurement method, a schematic diagram of the usage status of step S104 of the semiconductor device measurement method, and a schematic diagram of the usage status of step S110 of the semiconductor device measurement method. As shown in the above figures, the present invention provides a semiconductor device measurement system Z, which is used to measure a distance height between a semiconductor device 2 and a substrate 1. The semiconductor device measurement system Z includes a stage Z1, a measuring device Z2, and an analysis device Z3.

As shown in Figures 1 and 2, the stage Z1 can be used to support the substrate 1 and the semiconductor device 2. The semiconductor device 2 may have a metal layer 3 and multiple output terminals 4 connected to the metal layer 3, and the output terminals 4 are connected to the substrate 1. For example, the stage Z1 may be a uniaxial or multiaxial movable stage device. The substrate 1 may be a circuit board (PCB) or other type of carrier board. The semiconductor device 2 may be an electronic component (e.g., flip-chip, but not limited thereto). The metal layer 3 may be disposed on the bottom surface 20 of the semiconductor device 2 and serve as the output layer of the semiconductor device 2. The wiring method of the metal layer 3 is not limited to fan-in or fan-out. The output terminals 4 may be solder balls or other conductive components with the same characteristics.

Next, as shown in Figures 1 and 2, the measuring device Z2 can be configured to measure a first height D1 between the top surface 21 of the semiconductor device 2 and the substrate 1, and to measure the semiconductor layer thickness within the semiconductor device 2 based on infrared light, so as to obtain a second height D2 between the top surface 21 of the semiconductor device 2 and the top surface 30 of the metal layer 3. In one embodiment, the measuring device Z2 can be a camera, a rangefinder, or other non-contact optical ranging sensing device, which can measure the height (also called distance, i.e., the first height D1) between the top surface 21 of the semiconductor device 2 and the top surface 10 of the substrate 1 using methods such as triangulation, phase measurement, or stereoscopic vision. In one embodiment, the measuring device Z2 includes a measuring apparatus that provides short-wave infrared or near-infrared light, such as a laser displacement sensor or a film thickness measuring device. In another embodiment, the measuring device Z2 includes an infrared image acquisition device configured to capture an image of the top of the metal layer 3 to obtain a second height D2. The measuring device Z2 may be suspended on one side of the stage Z1, for example, above the stage Z1, but is not limited thereto.

Next, referring to Figure 1, the analysis device Z3 can be configured to obtain the spacing height H based on the first height D1, the second height D2, and the thickness of the metal layer 3, where the spacing height H is the distance between the bottom surface 31 of the metal layer 3 and the substrate 1. For example, the analysis device Z3 can be an electronic device, such as a computer or other electronic device with computing capabilities. The analysis device Z3 can estimate a predetermined amount of filler between the semiconductor device 2 and the substrate 1 based on the area of the semiconductor device 2, the number of output terminals 4, and the spacing height.

Furthermore, the semiconductor device measurement system Z of the present invention also includes a filler device Z4. The filler device Z4 can be configured to fill a pre-quantitative amount of adhesive between the metal layer 3 and the substrate 1 according to an estimated filler amount. For example, as shown in FIG4, the filler device Z4 can be adjacent to the stage Z1 and electrically connected to the analysis device Z3, and the filler device Z4 can be a uniaxial or multiaxial movable filler device.

It is worth noting that although the concept of the semiconductor device measurement method of the present invention has been explained in the process of describing the semiconductor device measurement system Z of the present invention, for the sake of clarity, a flowchart is shown below for detailed explanation.

Please refer to Figures 1 to 5 together. The semiconductor device measurement method of this invention includes the following steps:

As shown in Figures 1 to 3, a first height D1 between the top surface 21 of the semiconductor device 2 and the substrate 1 is measured (step S102).

Since the top surface 10 of the substrate 1 can be observed from the outer surface of the chip structure, the method for measuring and obtaining the first height D1 is less restricted. For example, the height (also called distance) between the top surface 21 of the semiconductor device 2 and the top surface 10 of the substrate 1 can be determined by triangulation, phase measurement or stereoscopic vision, etc., or directly measured by a camera, rangefinder or other non-contact optical ranging sensing device, but the present invention is not limited to this.

Furthermore, before step S102, the semiconductor device measurement method of the present invention may also include the following step S100: the stage Z1 can be used to support the substrate 1 and the semiconductor device 2. The semiconductor device 2 may have a metal layer 3 and multiple output terminals 4 connected to the metal layer 3, and the output terminals 4 are connected to the substrate 1.

Next, in conjunction with Figures 1 and 3, the thickness of the semiconductor layer in the semiconductor device 2 is measured using infrared light to obtain a second height D2 between the top surface 21 of the semiconductor device 2 and the top surface 30 of the metal layer 3 (step S104).

In one embodiment, the measuring device Z2 can be an infrared film thickness measuring device, capable of providing short-wave infrared (SWIR) or near-infrared (NIR) light as the thickness measurement medium. The wavelength of the aforementioned infrared light includes, but is not limited to, 700 nanometers to 3000 nanometers. Short-wave infrared (SWIR) and near-infrared (NIR) light are not penetrable to metal and will be reflected by the metal. This invention can measure the second height D2 between the top surface 21 of the semiconductor device 2 and the top surface 30 of the metal layer 3 by utilizing the penetrability and reflectivity of the infrared beam, based on the material difference between the semiconductor device 2 and the metal layer 3.

In one embodiment, the measuring device Z2 includes a laser displacement meter for measuring the thickness D2 of the back side of the semiconductor device 2 (i.e., the distance between the bottom surface 20 and the top surface 21).

Furthermore, step S104 of the semiconductor device measurement method of the present invention may also include the following step: using an image capture device to capture an image of the top of the metal layer 3, thereby obtaining the second height D2. Further, the measuring device Z2 includes an image capture device that captures an image of the top of the metal layer 3 and calculates the target depth within the semiconductor device 2 based on the image of the top of the metal layer 3, thereby obtaining the second height D2.

In one embodiment, as shown in Figures 1, 3, and 4, the measuring device Z2 includes an image capturing device that can adjust the imaging focal length to capture multiple top images at different predetermined depths, and analyzes the multiple top images at different depths to define the top image with the highest sharpness as a target depth. For example, the measuring device Z2 can adjust the imaging focal length to receive top images A1, A2, and A3 at different depths X1, X2, and X3 respectively; wherein, in actual operation, a predetermined depth can be set first, and a depth range covering the predetermined depth can be selected (for example, a depth range centered on the predetermined depth), and multiple top images can be captured within the depth range.

Next, after acquiring multiple top images at different predetermined depths, the measuring device Z2 can transmit these top images to the analysis device Z3 for analysis. Each top image comprises multiple pixels. By comparing the sharpness of pixels at the same location in each top image, the top image with the highest sharpness can be identified. This top image is imaged onto the measuring device Z2 at an optimal imaging focal length; that is, the top image with the highest sharpness is defined as a target depth. After identifying the target depth, the analysis device Z3 can obtain a second height D2 based on the target depth.

Next, referring to Figures 1 to 4, the spacing height H is obtained based on the first height D1, the second height D2, and the thickness of the metal layer 3 (step S106). The spacing height H can be the spacing between the bottom surface 31 of the metal layer 3 and the substrate 1.

For example, the analysis device Z3 can be electrically connected to the measuring device Z2. The thickness of the metal layer 3 can be estimated based on the process parameters used to form the metal layer 3. When the process parameters are the same, the difference in the thickness of the metal layer 3 is not significant; alternatively, the analysis device Z3 can pre-store relevant data on the thickness of the metal layer 3. Therefore, after the analysis device Z3 obtains the parameters of the first height D1 and the second height D2, it can calculate the spacing height H by combining it with the thickness parameter of the metal layer 3. The spacing height H can also be the length, height, or diameter of the output terminal 4, but is not limited to these.

Furthermore, in conjunction with Figures 1 to 4, the semiconductor device measurement method of the present invention may also include the following steps: estimating a predetermined amount of filler between the semiconductor device 2 and the substrate 1 based on the area of the semiconductor device 2, the number of output terminals 4, and the spacing height H (step S108).

For example, the analysis device Z3 of this invention can also pre-store relevant data such as the area (or volume) of the semiconductor device 2, the size (or volume) of the output terminal 4, and the number of output terminals 4. Therefore, after obtaining the spacing height H, the analysis device Z3 can further calculate based on the above data and the spacing height H to estimate the estimated filler amount between the semiconductor device 2 and the substrate 1.

Furthermore, in conjunction with Figures 1 to 5, the semiconductor device measurement method of the present invention may also include the following step S110: filling a primer G between the metal layer 3 and the substrate 1 according to the estimated filler amount.

For example, the filler device Z4 can fill the gap between the metal layer 3 and the substrate 1 with a corresponding pre-determined amount of adhesive based on the estimated filler amount generated by the analysis device Z3. The pre-determined amount mainly depends on the area of the substrate 1 and the semiconductor device 2, as well as the number of output terminals 4, and will not be specifically explained here.

Accordingly, in order to overcome the problems of excessive or insufficient filling of the primer G in the past, the semiconductor device measurement method and system of the present invention first obtains the vertical distance H between the metal layer 3 and the substrate 1, and then calculates the estimated amount of primer based on the distance H and the number of output terminals 4. In this way, the problems of excessive or insufficient primer G causing overflow or insufficient mechanical structure of the semiconductor device 2 can be avoided.

It is worth mentioning that in the semiconductor device measurement method of the present invention, it is not limited to performing step S102 first and then step S104, but step S104 can also be performed first and then step S102. Furthermore, the stage Z1, measuring device Z2, analyzing device Z3 and filling device Z4 of the present invention can be devices or equipment that can operate independently; and in other alternative embodiments, the analyzing device Z3 can also control at least one of the stage Z1, measuring device Z2 and filling device Z4 to operate according to the built-in program or human operation.

One of the advantages of this invention is that the semiconductor device measurement method and system provided by this invention can overcome the problem of excessive or insufficient filling of the primer G due to individual differences in chip structure by obtaining the spacing height H between the substrate 1 and the metal layer 3 and calculating the estimated amount of filler based on the spacing height H and the number of multiple output terminals 4.

Furthermore, the semiconductor device measurement method and system of this invention utilizes the characteristic that an infrared light beam (short-wave infrared or near-infrared light) can penetrate the semiconductor device 2 but is reflected by the metal layer 3 to emit an infrared light beam as a detection beam. After being reflected by the metal layer 3, the infrared light beam can be received by the measuring device Z2. Next, by performing pixel analysis on the top image to capture the top image of the top of the metal layer 3, a second height D2 between the top surface 30 of the metal layer 3 and the top surface 21 of the semiconductor device 2 is further obtained. Furthermore, using the first height D1, the second height D2, and the thickness of the metal layer 3, the spacing height H is obtained, and then an estimated amount of filler between the semiconductor device 2 and the substrate 1 is estimated.

Furthermore, the semiconductor device measurement method and system of this invention can also obtain multiple top images by adjusting the focal length of the measuring device and the object under test. In order to define the distance between the reference position P and the bottom surface 20 of the semiconductor device 2, pixel analysis is performed on the top images to find the top image with the best sharpness. The focal length of the top image is the optimal imaging focal length. After the optimal imaging focal length is calculated, the distance between the measuring reference position and the bottom surface 20 of the semiconductor device 2 can be obtained, and thus the distance between the metal layer 3 and the substrate 1 can be obtained.

The above-disclosed content is merely a preferred feasible embodiment of the present invention and is not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention's description and drawings are included within the scope of the patent application of the present invention.

1: Substrate; 10: Top surface; 2: Semiconductor device; 20: Bottom surface; 21: Top surface; 3: Metal layer; 30: Top surface; 31: Bottom surface; 4: Output terminals; A1~A3: Top image; D1: First height; D2: Second height; H: Spacing height; G: Undercoat; P: Reference position; X1~X3: Depth; Z: Semiconductor device measurement system; Z1: Stage; Z2: Measuring device; Z3: Analysis device; Z4: Filler device.

Figure 1 is a functional block diagram of a semiconductor device measurement system according to an embodiment of the present invention.

Figure 2 is a schematic diagram of the structure of the semiconductor device measurement system of the present invention; at the same time, it is also a schematic diagram of the usage status of step S102 of the semiconductor device measurement method.

Figure 3 is a flowchart of the measurement method for semiconductor devices according to an embodiment of the present invention.

Figure 4 is a schematic diagram of the usage status of step S104 of the semiconductor device measurement method of the present invention.

Figure 5 is a schematic diagram of the usage status of step S110 of the semiconductor device measurement method of the present invention.

Z: Semiconductor Device Measurement System

Z1: Platform

Z2: Measuring device

Z3: Analysis Device

Z4: Filler

Claims (12)

A semiconductor device measurement method is provided for measuring a distance height between a semiconductor device and a substrate, wherein the semiconductor device has a metal layer and a plurality of output terminals connected to the metal layer, and the output terminals are connected to the substrate. The method includes: measuring a first height between the top surface of the semiconductor device and the substrate; measuring the thickness of the semiconductor layer within the semiconductor device using infrared light to obtain a second height between the top surface of the semiconductor device and the top surface of the metal layer; and obtaining the distance height based on the first height, the second height, and the thickness of the metal layer, wherein the distance height is the distance between the bottom surface of the metal layer and the substrate. The semiconductor device measurement method as described in claim 1, wherein the infrared-based measurement step includes providing short-wave infrared or near-infrared light to measure the semiconductor layer thickness within the semiconductor device, thereby obtaining the second height. The semiconductor device measurement method as described in claim 1, wherein the infrared-based measurement step includes measuring the semiconductor layer thickness within the semiconductor device using a laser displacement sensing device or a film thickness measuring device, thereby obtaining the second height. The semiconductor device measurement method as described in claim 1, wherein the infrared-based measurement step includes using an image capture device to capture an image of the top of the metal layer to obtain the second height. The semiconductor device measurement method as described in claim 4, wherein the step of capturing the top image further includes: adjusting the imaging focal length to capture multiple top images at different predetermined depths; and analyzing the multiple top images to define the top image with the highest sharpness as a target depth. The semiconductor device measurement method as described in claim 1 further includes the following steps: Estimating an estimated filler amount between the semiconductor device and the substrate based on the area of the semiconductor device, the number of output terminals, and the spacing height. The semiconductor device measurement method as described in claim 6 further includes the following steps: Filling a primer between the metal layer and the substrate according to the estimated filler amount. A semiconductor device measurement system for measuring a distance height between a semiconductor device and a substrate, wherein the semiconductor device has a metal layer and a plurality of output terminals connected to the metal layer, and the output terminals are connected to the substrate, the system comprising: a stage for supporting the substrate and the semiconductor device; a measuring device configured to measure a first height between the top surface of the semiconductor device and the substrate, and to measure the thickness of the semiconductor layer within the semiconductor device based on infrared light to obtain a second height between the top surface of the semiconductor device and the top surface of the metal layer; and An analytical apparatus is configured to obtain the spacing height based on the first height, the second height, and the thickness of the metal layer, wherein the spacing height is the distance between the bottom surface of the metal layer and the substrate. The semiconductor device measurement system as described in claim 8, wherein the measuring device includes a laser displacement sensing device or a film thickness measuring device to measure the thickness of the semiconductor layer within the semiconductor device, thereby obtaining the second height. The semiconductor device measurement system as described in claim 8, wherein the measuring device includes an image capture device configured to capture an image of the top of the metal layer to obtain the second height. The semiconductor device measurement system as described in claim 10, wherein the measuring device is configured to adjust the imaging focal length to capture multiple top images at different predetermined depths, and analyze the multiple top images to define the top image with the highest sharpness as a target depth. The semiconductor device measurement system as described in claim 8, wherein the analysis device estimates an estimated filler amount between the semiconductor device and the substrate based on the area of the semiconductor device, the number of output terminals, and the pitch height; wherein the semiconductor device measurement system further includes a filler device configured to fill a predetermined amount of adhesive between the metal layer and the substrate based on the estimated filler amount.