TWI903545B - Biosensor device and method of manufacturing the same - Google Patents
Biosensor device and method of manufacturing the sameInfo
- Publication number
- TWI903545B TWI903545B TW113120668A TW113120668A TWI903545B TW I903545 B TWI903545 B TW I903545B TW 113120668 A TW113120668 A TW 113120668A TW 113120668 A TW113120668 A TW 113120668A TW I903545 B TWI903545 B TW I903545B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- layer
- conductive
- electrodes
- protective layer
- Prior art date
Links
Abstract
Description
本發明大體上與一種生物感測元件及其製作方法有關,更具體言之,其係關於一種使用奈米電極與電化學反應機制的生物感測元件及其製作方法。This invention relates generally to a biosensing element and a method for manufacturing the same, and more specifically, to a biosensing element using nanoelectrodes and an electrochemical reaction mechanism and a method for manufacturing the same.
生物感測器(biosensor)是一種用來檢測生物所產生的各類生物標記的裝置,例如檢測血液或體液中所攜帶的核酸、細胞/細菌、抗體/抗原、酵素或是金屬離子等生物活性物質,其感測原理在於使用特定的生物受體來與其對應的生物活性物質結合反應,如此透過感測期間所引起的物理及/或化學反應等相關數值,因而感測到所要檢測的生物標記數值。目前業界常見的生物感測方式包含電化學感測、光學感測、或是表面聲波感測等,其廣泛應用在醫藥、生物技術、食品、農業及環境監測等領域。A biosensor is a device used to detect various biomarkers produced by living organisms, such as nucleic acids, cells/bacteria, antibodies/antigens, enzymes, or metal ions carried in blood or bodily fluids. Its sensing principle involves using specific bioreceptors to bind and react with their corresponding bioactive substances. The biomarker is detected by analyzing the physical and/or chemical reactions that occur during the sensing process. Common biosensing methods include electrochemical sensing, optical sensing, and surface acoustic wave sensing, which are widely used in pharmaceuticals, biotechnology, food, agriculture, and environmental monitoring.
生物感測器中會具備換能器(transducer,或稱為傳感器)或元件來將所感測到的生物訊號/能量轉換成所要偵測的訊號。以血糖機為例,血液中的葡萄糖與感測器上的酵素受體產生生化反應,透過作為換能器的電極可以將這些生化反應轉換成對應的電訊號,這些電訊號可傳送到感測線路等外部電子界面進行數據分析,如此得出所要量測的血糖值。Biosensors contain transducers (or sensors) or components that convert the sensed biosignals/energy into the signals to be detected. Taking a blood glucose meter as an example, glucose in the blood reacts with enzyme receptors on the sensor to produce a biochemical reaction. The electrodes, acting as transducers, convert these biochemical reactions into corresponding electrical signals. These electrical signals can be transmitted to external electronic interfaces such as sensing circuits for data analysis, thus obtaining the blood glucose value to be measured.
現今業界結合微機電系統與半導體技術已開發出了使用奈米電極(如奈米線或微粒)的革命性生物感測晶片,特別是在分子與細胞層級的診斷與治療上,其具有少量樣品需求、質傳速度快、和低界面電容等優點,在醫療領域方面有相當大的應用潛能。然而,對於生物感測器而言,穩定性是其重要的考量之一,感測器系統對內部和周圍環境干擾的敏感程度決定了其感測期間是否會因為訊號不穩的原因而導致判讀錯誤,進而影響到感測的準確性。特別是就奈米電極而言,其在感測時對系統內部的電場非常敏感,容易因為電場的集中與分佈不均而影響到其感測結果。對此,本領域的技術人士須改良現有的生物感測器之電極設計,以解決上述問題。Today, the industry has combined microelectromechanical systems (MEMS) and semiconductor technology to develop revolutionary biosensor chips using nanoelectrodes (such as nanowires or microparticles). These chips offer advantages such as low sample requirements, fast mass transfer, and low interfacial capacitance, particularly in molecular and cellular diagnosis and treatment, and have significant application potential in the medical field. However, stability is a crucial consideration for biosensors. The sensitivity of the sensing system to internal and external environmental interference determines whether signal instability during sensing will lead to misreadings, thus affecting the accuracy of the measurement. In particular, nanoelectrodes are highly sensitive to the electric field within the system during sensing, and the sensing results are easily affected by the concentration and uneven distribution of the electric field. Therefore, those skilled in the art must improve the electrode design of existing biosensors to solve the above problems.
有鑑於上述現有技術的不足,本發明於此提出了一種新穎的生物感測元件及其製作方法,其特點在於感測端的電極與供電線路之間具有一定的距離,如此可避免電極受到電場集中或分佈不均的影響,使感測更為穩定準確,且其在製程方面也可避免下方的導電線路受到蝕刻而裸露腐蝕。In view of the shortcomings of the existing technology, the present invention proposes a novel biosensing element and its manufacturing method. The feature is that there is a certain distance between the electrode of the sensing end and the power supply line. This can avoid the influence of electric field concentration or uneven distribution on the electrode, making the sensing more stable and accurate. In addition, it can also avoid the corrosion of the conductive line below due to etching in the manufacturing process.
本發明的其一面向為提出一種生物感測元件,其結構包含:一基底;一第一絕緣層位於該基底上;一導電層位於該第一絕緣層上,該導電層包含多個第一導電部位以及一第二導電部位,且該第二導電部位的面積大於每一該第一導電部位的面積;一第二絕緣層覆蓋在該導電層上;一電極層位於該第二絕緣層上,該電極層包含多個第一電極以及一第二電極,該第二電極的面積大於每一該第一電極的面積,且每一該第一電極對應到一該第二導電部位;以及多個導孔件位於該導電層與該電極層之間的該第二絕緣層中,該第二電極透過該導孔件與該第二導電部位電性連接,且每一該第一電極透過一該導孔件與對應的一該第一導電部位電性連接。One aspect of this invention is to provide a biosensing element, the structure of which includes: a substrate; a first insulating layer disposed on the substrate; a conductive layer disposed on the first insulating layer, the conductive layer including a plurality of first conductive portions and a second conductive portion, wherein the area of the second conductive portion is larger than the area of each of the first conductive portions; a second insulating layer covering the conductive layer; and an electrode layer disposed on the second insulating layer, the electrode layer covering... It includes multiple first electrodes and a second electrode, the area of the second electrode being larger than the area of each of the first electrodes, and each of the first electrodes corresponding to a second conductive portion; and multiple vias located in the second insulating layer between the conductive layer and the electrode layer, the second electrodes being electrically connected to the second conductive portion through the vias, and each of the first electrodes being electrically connected to a corresponding first conductive portion through a via.
本發明的另一面向為提出一種生物感測元件的製作方法,其步驟包含:提供一基底;在該基底上依序形成一第一絕緣層以及一導電層;進行第一光刻製程圖案化該導電層,形成多個第一導電部位以及一第二導電部位,其中該第二導電部位的面積大於每一該第一導電部位的面積;在該第一絕緣層以及該導電層上形成一第二絕緣層;在該第二絕緣層中形成多個導孔件,該些導孔件從該第二絕緣層中露出,且每一該第一導電部位與一該導孔件電性連接;以及在該第二絕緣層上形成一電極層,其中該電極層包含多個第一電極以及一第二電極,該第二電極的面積大於每一該第一電極的面積,且每一該第一電極透過一該導孔件電性連接至一對應的該第一導電部位。Another aspect of this invention is to provide a method for manufacturing a biosensing element, the steps of which include: providing a substrate; sequentially forming a first insulating layer and a conductive layer on the substrate; performing a first photolithography process to pattern the conductive layer, forming a plurality of first conductive portions and a second conductive portion, wherein the area of the second conductive portion is larger than the area of each of the first conductive portions; and forming a second insulating layer on the first insulating layer and the conductive layer. A plurality of vias are formed in the second insulating layer, the vias being exposed from the second insulating layer, and each of the first conductive portions is electrically connected to a via; and an electrode layer is formed on the second insulating layer, wherein the electrode layer includes a plurality of first electrodes and a second electrode, the area of the second electrode being larger than the area of each of the first electrodes, and each of the first electrodes being electrically connected to a corresponding first conductive portion through a via.
本發明的這類目的與其他目的在閱者讀過下文中以多種圖示與繪圖來描述的較佳實施例之細節說明後應可變得更為明瞭顯見。These and other purposes of the present invention should become more apparent to the reader after reading the details of the preferred embodiments described below with various illustrations and diagrams.
現在下文將詳細說明本發明的示例性實施例,其會參照附圖示出所描述之特徵以便閱者理解並實現技術效果。閱者將可了解文中之描述說明僅係透過例示之方式來進行,其非意欲要限制本案。本案的各種實施例和實施例中彼此不衝突的各種特徵可以各種方式來加以組合或重新排列設置。在不脫離本發明的精神與範疇的情況下,對本案的修改、等同物或改進對於本領域技術人員來說是可以理解的,並且旨在包含在本案的範圍內。Exemplary embodiments of the present invention will now be described in detail below, with reference to the accompanying drawings illustrating the described features to enable the reader to understand and achieve the technical effects. The reader will understand that the descriptions herein are by way of illustration only and are not intended to limit the scope of the invention. Various embodiments of the invention and the non-conflicting features thereof can be combined or rearranged in various ways. Modifications, equivalents, or improvements to the invention are understandable to those skilled in the art without departing from the spirit and scope of the invention and are intended to be included within the scope of the invention.
閱者應能容易理解,本案中的「在…上」、「在…之上」和「在…上方」的含義應當以廣義的方式被解讀,以使得「在…上」不僅表示「直接在」某物「上」而且還包括在某物「上」且其間有居間特徵或層的含義,並且「在…之上」或「在…上方」不僅表示「在」某物「之上」或「上方」的含義,而且還可以包括其「在」某物「之上」或「上方」且其間沒有居間特徵或層(即,直接在某物上)的含義。此外,為了描述方便,諸如「在…之下」、「在…下方」、「下部」、「在…之上」、「上部」等空間相關的術語在本文中可以用於描述一個元件或特徵與另一個或多個元件或特徵之間的關係,如在附圖中示出的。Readers should easily understand that the meanings of "on," "above," and "above" in this case should be interpreted broadly, so that "on" not only means "directly on" something but also includes something with an intermediary feature or layer, and "above" or "above" not only means "above" or "above" something but can also include something "above" or "above" without an intermediary feature or layer (i.e., directly on something). In addition, for ease of description, spatial terms such as "below," "under," "lower part," "above," and "upper part" may be used in this article to describe the relationship between one element or feature and one or more other elements or features, as shown in the accompanying figure.
如本文中使用的,術語「基底」是指向其上增加後續材料的材料。可以對基底自身進行圖案化。增加在基底的頂部上的材料可以被圖案化或可以保持不被圖案化。此外,基底可以包括廣泛的半導體材料,例如矽、鍺、砷化鎵、磷化銦等。或者,基底可以由諸如玻璃、塑膠或藍寶石晶圓的非導電材料製成。As used herein, the term "substrate" refers to the material on which subsequent materials are added. The substrate itself can be patterned. The material added on top of the substrate can be patterned or left unpatterned. Furthermore, the substrate can include a wide range of semiconductor materials, such as silicon, germanium, gallium arsenide, indium phosphide, etc. Alternatively, the substrate can be made of non-conductive materials such as glass, plastic, or sapphire wafers.
如本文中使用的,術語「層」是指包括具有厚度的區域的材料部分。層可以在下方或上方結構的整體之上延伸,或者可以具有小於下方或上方結構範圍的範圍。此外,層可以是厚度小於連續結構的厚度的均質或非均質連續結構的區域。例如,層可以位於在連續結構的頂表面和底表面之間或在頂表面和底表面處的任何水平面對之間。層可以水準、豎直和/或沿傾斜表面延伸。基底可以是層,其中可以包括一個或多個層,和/或可以在其上、其上方和/或其下方具有一個或多個層。層可以包括多個層。例如,互連層可以包括一個或多個導體和接觸層(其中形成觸點、互連線和/或通孔)和一個或多個介電層。As used herein, the term "layer" refers to a portion of material comprising a region of thickness. A layer may extend over the entirety of a structure below or above it, or may have a range smaller than that of the structure below or above. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure with a thickness less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure or between any horizontal planes at the top and bottom surfaces. A layer may extend horizontally, vertically, and/or along an inclined surface. A substrate may be a layer, which may include one or more layers, and/or may have one or more layers on, above, and/or below it. A layer may include multiple layers. For example, an interconnect layer may include one or more conductor and contact layers (where contacts, interconnects and/or vias are formed) and one or more dielectric layers.
閱者通常可以至少部分地從上下文中的用法理解術語。例如,至少部分地取決於上下文,本文所使用的術語「一或多個」可以用於以單數意義描述任何特徵、結構或特性,或者可以用於以複數意義描述特徵、結構或特性的組合。類似地,至少部分地取決於上下文,諸如「一」、「一個」、「該」或「所述」之類的術語同樣可以被理解為傳達單數用法或者傳達複數用法。另外,術語「基於」可以被理解為不一定旨在傳達排他性的因素集合,而是可以允許存在不一定明確地描述的額外因素,這同樣至少部分地取決於上下文。Readers can generally understand terms at least partially from their usage in context. For example, depending at least partially on the context, the term "one or more" as used herein can be used to describe any feature, structure, or characteristic in a singular sense, or to describe a combination of features, structures, or characteristics in a plural sense. Similarly, depending at least partially on the context, terms such as "a," "an," "the," or "the" can also be understood to convey either a singular or a plural usage. Furthermore, the term "based on" can be understood not necessarily to convey an exclusive set of factors, but rather to allow for additional factors that are not necessarily explicitly described, which also depends at least partially on the context.
閱者更能了解到,當「包含」與/或「含有」等詞用於本說明書時,其明定了所陳述特徵、區域、整體、步驟、操作、要素以及/或部件的存在,但並不排除一或多個其他的特徵、區域、整體、步驟、操作、要素、部件以及/或其組合的存在或添加的可能性。Readers will further understand that when words such as "comprising" and/or "containing" are used in this specification, they expressly define the presence of the stated features, areas, wholes, steps, operations, elements, and/or components, but do not preclude the possibility of the presence or addition of one or more other features, areas, wholes, steps, operations, elements, components, and/or combinations thereof.
在下述實施例中,本發明提出了一種用於生物感測器(biosensor)中的生物感測元件的細部結構與相關製作方法,特別係以其中作為換能器部件的電極為主體。須注意儘管實施例中以電化學式的生物感測機制為範例,但本發明並不侷限於此,任何具備感測電極部件的生物感測器皆可應用本發明的設想與概念,其範疇將以隨附的申請專利範圍來界定。In the following embodiments, the present invention provides a detailed structure and related manufacturing method of a biosensing element for use in a biosensor, particularly focusing on the electrode as a transducer component. It should be noted that although the embodiments use an electrochemical biosensing mechanism as an example, the present invention is not limited thereto. Any biosensor with a sensing electrode component can apply the concepts and ideas of the present invention, the scope of which will be defined by the appended patent claims.
現在下述實施例將依序參照第1~9圖的截面示意圖來說明製作本發明生物感測元件100的步驟流程。The following embodiments will now describe the steps for manufacturing the biosensing element 100 of the present invention with reference to the cross-sectional schematic diagrams in Figures 1 to 9.
首先請參照第1圖。在製程一開始,提供一基底102作為整個生物感測元件100的設置基礎。基底102可為一矽基底,其中也可包含但不限於其他的半導體材料,如氮化鎵(GaN)、碳化矽(SiC)、矽鍺(SiGe)、鍺或其組合等。接著,在基底102上形成一第一絕緣層104,以使後續製作於其上的生物感測元件具有良好的絕緣性質。在本發明實施例中,第一絕緣層104可藉由原子層沉積法(ALD)、物理氣相沉積法(PVD)、化學氣相沉積法(CVD)、化學氧化法、熱氧化法及/或其他適合的方法來形成,其材料可包含但不限是氧化物、氮化物、氮氧化物或其組合,如氧化矽、氮化矽、氮氧化矽,或是低介電常數(low-K)材料等。第一絕緣層104的厚度約為6000埃(Å)。First, please refer to Figure 1. At the beginning of the manufacturing process, a substrate 102 is provided as the basis for the entire biosensor 100. The substrate 102 may be a silicon substrate, and may also contain, but is not limited to, other semiconductor materials, such as gallium nitride (GaN), silicon carbide (SiC), silicon germanium (SiGe), germanium, or combinations thereof. Next, a first insulating layer 104 is formed on the substrate 102 to give the biosensor subsequently fabricated thereon good insulating properties. In this embodiment of the invention, the first insulating layer 104 can be formed by atomic layer deposition (ALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), chemical oxidation, thermal oxidation, and/or other suitable methods. The material may include, but is not limited to, oxides, nitrides, oxynitrides, or combinations thereof, such as silicon oxide, silicon nitride, silicon oxynitride, or low-k dielectric materials. The thickness of the first insulating layer 104 is approximately 6000 angstroms (Å).
請參照第2圖。第一絕緣層104形成後,接著在第一絕緣層104上依序形成一下阻障層106、一中間導電層108、以及一上阻障層110,作為生物感測元件100的導電線路,其統稱為導電層。下阻障層106、中間導電層108以及上阻障層110可透過PVD、CVD、電子束蒸鍍、濺鍍、電鍍及/或其他適合的方法來形成。其中,中間導電層108的材料可包含但不限是導電性良好的鈦(Ti)、鎳(Ni)、銀(Ag)、鋁(Al)、銅鋁合金(AlCu)、銅鋁矽合金(AlSiCu)或其組合,其作為導電線路的主體,厚度約為4000埃(Å)。下阻障層106與上阻障層110的材料可為氮化鈦(TiN),其厚度約為200Å,可避免中間導電層108中的金屬成分擴散汙染到周遭的介電層。須注意在其他實施例中,上述導電線路也可能不具備下阻障層106及/或上阻障層110,視發明的需求而定。Please refer to Figure 2. After the first insulating layer 104 is formed, a lower barrier layer 106, an intermediate conductive layer 108, and an upper barrier layer 110 are sequentially formed on the first insulating layer 104 to serve as conductive lines for the biosensing element 100, collectively referred to as conductive layers. The lower barrier layer 106, the intermediate conductive layer 108, and the upper barrier layer 110 can be formed by PVD, CVD, electron beam evaporation, sputtering, electroplating, and/or other suitable methods. The intermediate conductive layer 108 may be made of materials with good conductivity, including but not limited to titanium (Ti), nickel (Ni), silver (Ag), aluminum (Al), copper-aluminum alloy (AlCu), copper-aluminum-silicon alloy (AlSiCu), or combinations thereof. It serves as the main body of the conductive path and has a thickness of approximately 4000 angstroms (Å). The lower barrier layer 106 and the upper barrier layer 110 may be made of titanium nitride (TiN) and have a thickness of approximately 200 Å, which can prevent the metal components in the intermediate conductive layer 108 from diffusing and contaminating the surrounding dielectric layer. It should be noted that in other embodiments, the above-described conductive path may not have a lower barrier layer 106 and/or an upper barrier layer 110, depending on the requirements of the invention.
復參照第2圖。下阻障層106、中間導電層108以及上阻障層110形成後,接著進行第一光刻製程圖案化上述層結構,如此形成多個面積較小的第一導電部位112a以及一面積較大的第二導電部位112b。須注意在本發明實施例中,第一導電部位112a與第二導電部位112b並非是真正與生物受體以及待測物接觸的電極端,而是該些電極端所對應的導電線路部位,也是感測期間高強度電場的所在。在本發明實施例中,上述第一導電部位112a與第二導電部位112b可整合在一般半導體後段製程(BEOL)中與互連金屬層一起製作。該第一導電部位112a與第二導電部位112b會進一步與生物感測器的感測線路(未示出)連接,以傳遞感測到的電訊號至外部電子設備或介面中的訊號處理單元進行匹配與放大處理,如此轉換成一般可供人判讀的界面。Referring again to Figure 2, after the lower barrier layer 106, the intermediate conductive layer 108, and the upper barrier layer 110 are formed, a first photolithography process is performed to pattern the above-mentioned layer structure, thus forming multiple smaller first conductive portions 112a and a larger second conductive portion 112b. It should be noted that in this embodiment of the invention, the first conductive portions 112a and the second conductive portions 112b are not actual electrodes in contact with the biological receptor and the test object, but rather the conductive lines corresponding to these electrodes, which are also the locations of the high-intensity electric field during sensing. In this embodiment of the invention, the aforementioned first conductive portions 112a and second conductive portions 112b can be integrated into a typical back-end semiconductor process (BEOL) and fabricated together with interconnect metal layers. The first conductive part 112a and the second conductive part 112b are further connected to the sensing circuit (not shown) of the biosensor to transmit the sensed electrical signal to the signal processing unit in the external electronic device or interface for matching and amplification processing, thus converting it into an interface that can be read by humans.
請參照第3圖。第一導電部位112a以及第二導電部位112b形成後,接著在第一絕緣層104、第一導電部位112a以及第二導電部位112b上形成一第二絕緣層114。第二絕緣層114會覆蓋第一導電部位112a以及第二導電部位112b並填入其間的空隙中。在本發明實施例中,第二絕緣層114可為一般半導體後段製程(BEOL)中的金屬間介電層(IMD),可透過PECVD、CVD及/或其他適合的方法來形成,其材料可包含但不限為氧化矽、氮化矽、氮氧化矽或是四乙氧基矽烷(TEOS) 等。第二絕緣層114形成後可再進行一化學機械平坦化(CMP)處理,以提供平坦的製程面。Please refer to Figure 3. After the first conductive portion 112a and the second conductive portion 112b are formed, a second insulating layer 114 is then formed on the first insulating layer 104, the first conductive portion 112a, and the second conductive portion 112b. The second insulating layer 114 covers the first conductive portion 112a and the second conductive portion 112b and fills the gaps between them. In this embodiment of the invention, the second insulating layer 114 can be a metal intermetallic dielectric (IMD) layer in a typical back-end semiconductor process (BEOL), which can be formed by PECVD, CVD, and/or other suitable methods. Its material can include, but is not limited to, silicon oxide, silicon nitride, silicon oxynitride, or tetraethoxysilane (TEOS). After the second insulating layer 114 is formed, a chemical mechanical planarization (CMP) process can be performed to provide a flat process surface.
請參照第4圖。第二絕緣層114形成後,接著在第二絕緣層114中形成多個導孔件(via)116。如圖所示,該些導孔件116會從第二絕緣層114中露出,且每一第一導電部位112a都會與一對應的導孔件116電性連接,第二導電部位112b則可與多個導孔件116電性連接。在本發明實施例中,導孔件116可為一般半導體後段製程(BEOL)中的互連金屬件,其材料可為鎢(W)或銅(Cu),可透過PVD、CVD、電子束蒸鍍、濺鍍、電鍍及/或其他適合的方法將上述材料填入預先形成的導孔中,之後再進行CMP製程移除其位於第二絕緣層114表面上的部分而形成。如此,所形成的導孔件116頂面大體上會與周圍的第二絕緣層114表面齊平。導孔件116的長度可為6000Å,與周遭的第二絕緣層114厚度大致相同。Please refer to Figure 4. After the second insulating layer 114 is formed, a plurality of vias 116 are then formed in the second insulating layer 114. As shown in the figure, these vias 116 are exposed from the second insulating layer 114, and each first conductive portion 112a is electrically connected to a corresponding via 116, while the second conductive portion 112b can be electrically connected to the plurality of vias 116. In this embodiment of the invention, the via 116 can be an interconnecting metal part in a typical semiconductor back-end process (BEOL). Its material can be tungsten (W) or copper (Cu). The via can be formed by filling a pre-formed via with the material through PVD, CVD, electron beam evaporation, sputtering, electroplating, and/or other suitable methods, followed by a CMP process to remove the portion of the via located on the surface of the second insulating layer 114. Thus, the top surface of the formed via 116 is substantially flush with the surrounding surface of the second insulating layer 114. The length of the via 116 can be 6000 Å, approximately the same as the thickness of the surrounding second insulating layer 114.
請參照第5圖。導孔件116形成後,接著在第二絕緣層114以及該些導孔件116上形成一電極層118a, 118b,以作為生物感測元件100的電極端。電極層118a, 118b同樣可透過PVD、CVD、電子束蒸鍍、濺鍍、電鍍及/或其他適合的方法來形成,厚度約為2000埃(Å),其材料可包含但不限是氮化鈦(TiN)、銀(Ag)、金(Au)、鉑(Pt)、碳(C)、甘汞(calomel)等。在本發明實施例中,上述電極層形成後會進行一光刻製程來將其圖案化成多個面積較小的第一電極118a以及一面積較大的第二電極118b。其中,每一該第一電極118a可透過一導孔件116連接到下方一對應的第一導電部位112a,該第二電極118b可透過至少一導孔件116連接到下方對應的第二導電部位112b。Please refer to Figure 5. After the via 116 is formed, an electrode layer 118a, 118b is then formed on the second insulating layer 114 and the vias 116 to serve as the electrode terminals of the biosensing element 100. The electrode layers 118a, 118b can also be formed by PVD, CVD, electron beam evaporation, sputtering, electroplating and/or other suitable methods, with a thickness of approximately 2000 angstroms (Å), and the material may include, but is not limited to, titanium nitride (TiN), silver (Ag), gold (Au), platinum (Pt), carbon (C), calomel, etc. In this embodiment of the invention, after the electrode layer is formed, a photolithography process is performed to pattern it into multiple smaller first electrodes 118a and a larger second electrode 118b. Each of the first electrodes 118a can be connected to a corresponding lower first conductive portion 112a through a via 116, and each of the second electrodes 118b can be connected to a corresponding lower second conductive portion 112b through at least one via 116.
在本發明實施例中,第一電極118a較佳為一工作電極,例如奈米電極,其可以奈米點或奈米線的型態整齊均勻地排佈在第二絕緣層114的量測區域表面上。第二電極118b較佳為對電極(counter electrode,也可稱為輔助電極)或是參考電極,其不限於雙電極或是三電極的感測系統。在本發明實施例中,以電化學式的感測為例,第一電極118a在電解質環境中施予適當的電壓條件下可作為電子提供者或者是電子接收者的角色,其較佳具備高訊雜比及寬廣的電位窗範圍。在實作中,第一電極118a係設計來連接對應檢測物的生物受體,以接收其反應時所產生之電訊號,第二電極118b則扮演與第一電極118a相對應的角色。例如在氧化還原的檢測系統中,當第一電極118a進行氧化反應時,第二電極118b則進行還原反應,反之亦然。第二電極118b一般不參與電化學反應,僅提供電荷平衡功能,其特性較佳具有高穩定性與高導電性,進而完成反應電子迴路。在本發明實施例中,第二電極118b的水平面積要遠大於第一電極118a的水平面積,例如為其10倍以上,以盡可能讓電子迴路的功能完整且作動快速。再者,在本發明實施例中,上述電極層較佳會對應到其下方的導電層部位。更具體言之,每一第一電極118a會對應到其下方的一第一導電部位112a並與之重疊。第二電極118b會對應到下方的第二導電部位112b並與之重疊。與電極層118a, 118b相同,第二導電部位112b的水平面積要遠大於第一導電部位112a的水平面積。In this embodiment of the invention, the first electrode 118a is preferably a working electrode, such as a nanoelectrode, which can be neatly and uniformly arranged on the surface of the measurement area of the second insulating layer 114 in the form of nanodots or nanowires. The second electrode 118b is preferably a counter electrode (also known as an auxiliary electrode) or a reference electrode, and is not limited to a two-electrode or three-electrode sensing system. In this embodiment of the invention, taking electrochemical sensing as an example, the first electrode 118a can act as an electron provider or electron receiver under appropriate voltage conditions in an electrolyte environment, and preferably has a high signal-to-noise ratio and a wide potential window range. In practice, the first electrode 118a is designed to connect to the corresponding bioreceptor of the analyte to receive the electrical signal generated during its reaction, while the second electrode 118b plays a corresponding role to the first electrode 118a. For example, in a redox detection system, when the first electrode 118a undergoes an oxidation reaction, the second electrode 118b undergoes a reduction reaction, and vice versa. The second electrode 118b generally does not participate in the electrochemical reaction, but only provides a charge balancing function. Its characteristics are superior, exhibiting high stability and high conductivity, thereby completing the reaction electron circuit. In this embodiment of the invention, the horizontal area of the second electrode 118b is much larger than that of the first electrode 118a, for example, more than 10 times larger, to ensure the complete functionality and rapid operation of the electronic circuit as much as possible. Furthermore, in this embodiment of the invention, the aforementioned electrode layers preferably correspond to the conductive layer portion below them. More specifically, each first electrode 118a corresponds to and overlaps with a first conductive portion 112a below it. The second electrode 118b corresponds to and overlaps with a second conductive portion 112b below it. Similar to the electrode layers 118a and 118b, the horizontal area of the second conductive portion 112b is much larger than the horizontal area of the first conductive portion 112a.
本發明上述設計的優點在於,與待測物接觸的電極端,如第一電極118a與第二電極118b,係遠離提供電場的導電層,如第一導電部位112a與第二導電部位112b,兩者間透過導孔件116來連接。如此,在感測器運作時可避免敏感的奈米電極受到導電層附近電場不均的影響,特別是導電層角落部位的電場集中處,進而導致判讀錯誤而影響到感測的準確性與穩定性,這是習知技術中直接將電極層設置在導電層上的做法所無法達到的功效。此外,上述設計也可避免在進行光刻製程界定電極圖案時損傷到下方的導電層,造成其金屬材質裸露損傷,甚至發生腐蝕。The advantage of the above design of this invention is that the electrode terminals that contact the object under test, such as the first electrode 118a and the second electrode 118b, are far from the conductive layer that provides the electric field, such as the first conductive portion 112a and the second conductive portion 112b, and the two are connected through the via 116. In this way, when the sensor is operating, the sensitive nanoelectrodes can avoid being affected by the uneven electric field near the conductive layer, especially the electric field concentration at the corner of the conductive layer, which could lead to misreading and affect the accuracy and stability of the sensing. This is an effect that cannot be achieved by the prior art approach of directly placing the electrode layer on the conductive layer. In addition, the above design can also avoid damaging the underlying conductive layer when defining the electrode pattern in the photolithography process, causing its metal material to be exposed and damaged, or even corroded.
再者,本發明透過半導體製程將導電層圖案化成與上方第一電極118a與第二電極118b對應的第一導電部位112a與第二導電部位112b,如此,各個電極都能被提供獨立的電場以及進行特定的檢測動作,這樣的設計有利於在同一感測系統中將感測區域分為多個獨立的感測區,依需求設定各區的功能而實現多工檢測。例如以診斷腹瀉症狀為例,導致腹瀉症狀常見的病因可能包含細菌、輪狀病毒、諾羅病毒、腺病毒、腸病毒等病原,透過將檢測區域劃分為不同的獨立偵測區來檢測該些病原,並在該些區域的電極上設置對應的生物受體,如此僅採用同一病源樣本即可達到同時多工檢測的功效,這是習知技術中所有電極共用一導電層的做法所不易做到的。Furthermore, this invention uses semiconductor manufacturing processes to pattern the conductive layer into first conductive portions 112a and second conductive portions 112b corresponding to the first electrode 118a and the second electrode 118b above. In this way, each electrode can be provided with an independent electric field and perform specific detection actions. This design is beneficial for dividing the sensing area into multiple independent sensing zones in the same sensing system, and setting the function of each zone as needed to achieve multiplexing detection. For example, in diagnosing diarrhea, common causes of diarrhea may include pathogens such as bacteria, rotavirus, norovirus, adenovirus, and enterovirus. By dividing the detection area into different independent detection zones to detect these pathogens, and placing corresponding biological receptors on the electrodes in these zones, the effect of simultaneous multiplexing can be achieved using only the same pathogen sample. This is something that is difficult to achieve in conventional techniques where all electrodes share a single conductive layer.
請參照第6圖。第一電極118a與第二電極118b形成後,接著在該些電極以及第二絕緣層114上依序形成一第一保護層120以及一第二保護層122,以保護該些電極。在本發明實施例中,第一保護層120與第二保護層122可藉由ALD、PVD、CVD及/或其他適合的方法來形成。其中,第一保護層120的材料可為氮化矽,其厚度約為1000Å,共形地形成在電極上。第二保護層122的材料較佳與第一保護層120的材料具有明顯的蝕刻選擇比,如氧化矽,其會覆蓋並填滿電極之間的空間。須注意,如圖所示,由於第二電極118b是大塊電極的緣故,沉積於其上的第二保護層122的頂面高度會高於第一電極118a上的第二保護層122的頂面高度。Please refer to Figure 6. After the first electrode 118a and the second electrode 118b are formed, a first protective layer 120 and a second protective layer 122 are sequentially formed on the electrodes and the second insulating layer 114 to protect the electrodes. In this embodiment of the invention, the first protective layer 120 and the second protective layer 122 can be formed by ALD, PVD, CVD and/or other suitable methods. The material of the first protective layer 120 can be silicon nitride, with a thickness of about 1000 Å, and it is conformally formed on the electrode. The material of the second protective layer 122 preferably has a significant etch selectivity ratio with the material of the first protective layer 120, such as silicon oxide, which covers and fills the space between the electrodes. It should be noted that, as shown in the figure, because the second electrode 118b is a bulk electrode, the top height of the second protective layer 122 deposited on it will be higher than the top height of the second protective layer 122 on the first electrode 118a.
請參照第7圖。第一保護層120與第二保護層122形成後,接著進行一光刻製程圖案化第二保護層122,以定義出後續所要露出的第二電極的圖案。此步驟中第二電極118b部位正上方的第二保護層122會被移除而露出部份的第一保護層120。因為第二電極118b上的第二保護層122高度高於第一電極118a上的第二保護層122高度,此步驟後該第二保護層122在第二電極118b的邊緣與第一電極118a上鄰接的邊界處會具有一凸起部122a。Please refer to Figure 7. After the first protective layer 120 and the second protective layer 122 are formed, a photolithography process is performed to pattern the second protective layer 122 to define the pattern of the second electrode to be exposed later. In this step, the second protective layer 122 directly above the second electrode 118b is removed, exposing part of the first protective layer 120. Because the height of the second protective layer 122 on the second electrode 118b is greater than the height of the second protective layer 122 on the first electrode 118a, after this step, the second protective layer 122 will have a protrusion 122a at the boundary between the edge of the second electrode 118b and the adjacent edge of the first electrode 118a.
請參照第8圖。露出第二電極118b上的第一保護層120後,接著進行一回蝕刻製程,移除一定厚度的第二保護層122與第一保護層120,如此露出第一電極118a與第二電極118b。在此步驟中,第二電極118b上露出的第一保護層120會被完全移除,第一電極118a頂面上的第二保護層122與第一保護層120也會被完全移除,使得第一電極118a露出。電極與電極之間的空間中則有部分的第一保護層120與第二保護層122餘留,以提供保護電極側壁的效果,從第一電極118a下方露出的導孔件116也可受到第一保護層120的保護。此外,該步驟後第一保護層120與第二保護層122在第二電極118b邊緣與第一電極118a鄰接的邊界處同樣會具有一凸起部123。須注意在此實施例中,作為工作電極的第一電極118a會設計成些微地凸出於周圍的第一保護層120與第二保護層122表面,例如其凸出於表面的高度為30nm。凸出的第一電極118a可使得其電場包覆範圍更廣,有助於電化學反應效率的提升,進而增加訊號的強度,提升靈敏度,如此使得奈米電極能具有更好的三維生物感測功效。Please refer to Figure 8. After exposing the first protective layer 120 on the second electrode 118b, an etching process is then performed to remove a certain thickness of the second protective layer 122 and the first protective layer 120, thus exposing the first electrode 118a and the second electrode 118b. In this step, the first protective layer 120 exposed on the second electrode 118b is completely removed, and the second protective layer 122 and the first protective layer 120 on the top surface of the first electrode 118a are also completely removed, thus exposing the first electrode 118a. In the space between the electrodes, portions of the first protective layer 120 and the second protective layer 122 remain to protect the electrode sidewalls. The via 116 exposed below the first electrode 118a is also protected by the first protective layer 120. Furthermore, after this step, the first protective layer 120 and the second protective layer 122 will also have a protrusion 123 at the boundary where the edge of the second electrode 118b is adjacent to the first electrode 118a. It should be noted that in this embodiment, the first electrode 118a, serving as the working electrode, is designed to slightly protrude from the surrounding surfaces of the first protective layer 120 and the second protective layer 122, for example, by a height of 30 nm. The protruding first electrode 118a allows for a wider electric field coverage, which helps improve the efficiency of electrochemical reactions, thereby increasing signal strength and sensitivity. This enables the nanoelectrode to have better three-dimensional biosensing capabilities.
請參照第9圖。露出第一電極118a與第二電極118b後,接著在作為工作電極的第一電極118a上設置生物受體124,如酵素、抗體/抗原、核酸、細菌或細胞等生物活性物質,其可為生物探針的型態,主要作用在於提供感測器與待測物126之間專一性的結合或反應。待測物126可為生物活性物質,生物受體124對於特定的活性待測物126會有專一的親和性。以血糖的量測為例,其待測物126即為葡萄糖,透過量測血液中葡萄糖的濃度可得知受試者的血糖是否處於正常值。測試中會使用對葡萄糖具有特異性的酵素作為生物受體124,如葡萄糖氧化酶(GOx),其會與血液樣本中的葡萄糖產生結合反應。在葡萄糖的催化過程中,氧氣是葡萄糖氧化酶催化葡萄糖的共基質,其在反應中會讓GOx催化葡萄糖,進而形成葡萄糖酸內酯並產生副產物過氧化氫。如此,第一電極118a與第二電極118b在檢測過程中可分別扮演氧化/還原電極的角色,例如陰極端會進行溶氧還原反應,如此可透過電極偵測其溶氧時的還原電流訊號,並經由導孔件116以及導電層112a, 112b將所測得的電流訊號傳遞至外部的感測線路以及電子設備進行訊號的匹配、放大以及計算處理,如此即可得知血液內的葡萄糖濃度。Please refer to Figure 9. After exposing the first electrode 118a and the second electrode 118b, a bioreceptor 124, such as an enzyme, antibody/antigen, nucleic acid, bacteria, or cell, is then placed on the first electrode 118a, which serves as the working electrode. This bioreceptor can be in the form of a bioprobe, and its main function is to provide a specific binding or reaction between the sensor and the analyte 126. The analyte 126 can be a bioactive substance, and the bioreceptor 124 will have a specific affinity for the specific active analyte 126. Taking blood glucose measurement as an example, the analyte 126 is glucose. By measuring the concentration of glucose in the blood, it can be determined whether the subject's blood glucose level is within the normal range. The test uses enzymes specific to glucose as biological acceptors, such as glucose oxidase (GOx), which binds to glucose in the blood sample. In the glucose catalysis process, oxygen is the co-matrix for glucose oxidase, allowing GOx to catalyze glucose, leading to the formation of gluconolactone and the production of hydrogen peroxide as a byproduct. Thus, the first electrode 118a and the second electrode 118b can play the roles of oxidation/reduction electrodes respectively during the detection process. For example, the cathode terminal will undergo dissolved oxygen reduction reaction. The reduction current signal during dissolved oxygen can be detected through the electrode, and the measured current signal is transmitted to the external sensing circuit and electronic equipment through the via 116 and the conductive layers 112a and 112b for signal matching, amplification and calculation processing. In this way, the blood glucose concentration can be determined.
須注意上述的檢測機制僅作為一實施例說明。在實作中,針對相同或不同待測物126的量測,其有可能進行不同的反應機制及/或採用不同的生物受體124。故此,只要是感測中涉及產生或引發的生化反應能使生物感測器中的電極部位生成對應的電子訊號,包含電流式、電位式或是阻抗式等感測方式,本發明的電極設計皆可適用於其中。It should be noted that the detection mechanism described above is only an example. In practice, different reaction mechanisms and/or different bioreceptors 124 may be used for the measurement of the same or different analytes 126. Therefore, the electrode design of this invention can be applied to any biochemical reaction that is generated or triggered in the sensing process, which can cause the electrode part in the biosensor to generate a corresponding electronic signal, including current-based, potential-based, or impedance-based sensing methods.
綜合上述實施例之說明,本發明於此提出了生物感測元件,其結構包含一基底102、一第一絕緣層104位於基底102上、一導電層位於第一絕緣層104上,該導電層包含多個第一導電部位112a以及一第二導電部位112b,該第二導電部位112b的面積大於每一該第一導電部位112a的面積、一第二絕緣層114覆蓋在該導電層上、一電極層位於第二絕緣層114上,該電極層包含多個第一電極118a以及一第二電極118b,該第二電極118b的面積大於每一該第一電極118a的面積,且每一該第一電極118a對應到一第一導電部位112a、以及多個導孔件116位於該導電層與該電極層之間的第二絕緣層114中,第二電極118b透過導孔件116與第二導電部位112b電性連接,每一第一電極118a透過一導孔件116與對應的一第一導電部位112a電性連接。 以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 Based on the above description of the embodiments, the present invention provides a biosensing element, the structure of which includes a substrate 102, a first insulating layer 104 disposed on the substrate 102, a conductive layer disposed on the first insulating layer 104, the conductive layer including a plurality of first conductive portions 112a and a second conductive portion 112b, the area of the second conductive portion 112b being larger than the area of each of the first conductive portions 112a, a second insulating layer 114 covering the conductive layer, and an electrode layer disposed on the second insulating layer 114, the electrode layer including a plurality of first conductive portions 112a and a second conductive portion 112b covering the conductive layer. An electrode 118a and a second electrode 118b are provided, the area of the second electrode 118b being larger than the area of each of the first electrodes 118a. Each of the first electrodes 118a corresponds to a first conductive portion 112a. A plurality of vias 116 are located in a second insulating layer 114 between the conductive layer and the electrode layer. The second electrode 118b is electrically connected to the second conductive portion 112b through the vias 116, and each first electrode 118a is electrically connected to its corresponding first conductive portion 112a through a via 116. The above description is merely a preferred embodiment of the present invention. All equivalent variations and modifications made within the scope of the patent application of this invention shall fall within the scope of the present invention.
100:生物感測元件 102:基底 104:第一絕緣層 106:下阻障層 108:中間導電層 110:上阻障層 112a:第一導電部位 112b:第二導電部位 114:第二絕緣層 116:導孔件 118a:第一電極 118b:第二電極 120:第一保護層 122:第二保護層 122a:凸起部 124:生物受體 126:待測物100: Biosensor 102: Substrate 104: First Insulation Layer 106: Lower Barrier Layer 108: Intermediate Conductive Layer 110: Upper Barrier Layer 112a: First Conductive Part 112b: Second Conductive Part 114: Second Insulation Layer 116: Through-hole 118a: First Electrode 118b: Second Electrode 120: First Protective Layer 122: Second Protective Layer 122a: Protrusion 124: Bioreceptor 126: Analyte
本說明書含有附圖併於文中構成了本說明書之一部分,俾使閱者對本發明實施例有進一步的瞭解。該些圖示係描繪了本發明一些實施例並連同本文描述一起說明了其原理。在該些圖示中: 第1圖至第9圖為根據本發明實施例中一生物感測元件的製作流程的截面示意圖。 須注意本說明書中的所有圖示皆為圖例性質,為了清楚與方便圖示說明之故,圖示中的各部件在尺寸與比例上可能會被誇大或縮小地呈現,一般而言,圖中相同的參考符號會用來標示修改後或不同實施例中對應或類似的元件特徵。 This specification includes accompanying drawings, which form part of the document and provide the reader with a further understanding of the embodiments of the invention. These drawings illustrate some embodiments of the invention and, together with the description herein, explain its principles. In these drawings: Figures 1 through 9 are schematic cross-sectional views of the fabrication process of a biosensing element according to embodiments of the invention. It should be noted that all figures in this specification are illustrative in nature. For clarity and ease of explanation, the dimensions and scale of the components in the figures may be exaggerated or reduced. Generally, the same reference symbols in the figures are used to indicate corresponding or similar component features in modified or different embodiments.
100:生物感測元件 100: Biosensor Element
102:基底 102: Base
104:第一絕緣層 104: First Desperate Layer
112a:第一導電部位(導電層) 112a: First conductive part (conductive layer)
112b:第二導電部位(導電層) 112b: Second conductive part (conductive layer)
114:第二絕緣層 114: Second Insulation Layer
116:導孔件 116: Guide hole component
118a:第一電極(電極層) 118a: First electrode (electrode layer)
118b:第二電極(電極層) 118b: Second electrode (electrode layer)
120:第一保護層 120: First layer of protection
122:第二保護層 122: Second protective layer
124:生物受體 124: Biological receptors
126:待測物 126: Item to be tested
Claims (20)
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI903545B true TWI903545B (en) | 2025-11-01 |
| TW202548894A TW202548894A (en) | 2025-12-16 |
Family
ID=
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117783245A (en) | 2023-12-21 | 2024-03-29 | 上海交通大学 | Thin film transistor biochip for biochemical detection and method of forming same |
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117783245A (en) | 2023-12-21 | 2024-03-29 | 上海交通大学 | Thin film transistor biochip for biochemical detection and method of forming same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5027296B2 (en) | Biosensor chip | |
| Pan et al. | Rapid and label-free detection of the troponin in human serum by a TiN-based extended-gate field-effect transistor biosensor | |
| JP5568466B2 (en) | Impedance biosensor and use thereof | |
| US8673772B2 (en) | Biosensor chip and a method of manufacturing the same | |
| JP2005077210A (en) | Biomolecule detection element and nucleic acid analysis method using the same | |
| WO2012152308A1 (en) | Ion sensitive field effect transistor | |
| KR101921627B1 (en) | Field effect transistor, biosensor comprising the same, method for manufacturing Field effect transistor, and method for manufacturing biosensor | |
| JP2005513501A (en) | FET sensor with gate electrode specially configured for sensitive detection of analyte | |
| JP5706684B2 (en) | Biosensor for electrochemical and / or electrical measurement, diamond electrode, and electronic integrated circuit | |
| EP2263078B1 (en) | A sensor chip and a method of manufacturing the same | |
| US20170067890A1 (en) | On-Chip Disease Diagnostic Platform for Dual-Gate Ion Sensitive Field Effect Transistor | |
| US11674924B2 (en) | Sensor with a membrane having full circumferential adhesion | |
| CN101432625A (en) | biosensor device | |
| US7435610B2 (en) | Fabrication of array pH sensitive EGFET and its readout circuit | |
| TWI903545B (en) | Biosensor device and method of manufacturing the same | |
| Samanta et al. | Specific and Label‐Free Sensing of Prostate‐Specific Antigen (PSA) from an Ultrasmall Drop of Diluted Human Serum with the Meta‐Nano‐Channel Silicon Field‐Effect Biosensor | |
| TW202548894A (en) | Biosensor device and method of manufacturing the same | |
| TWI351435B (en) | Separative extended gate field effect transistor b | |
| TW202334645A (en) | Structures for biochip | |
| CN113203773A (en) | Biosensor and method for measuring the same | |
| WO2005036156A1 (en) | Detection of molecular interactions using a metal-insulator-semiconductor diode structure | |
| Babbar et al. | Reassessing the challenge of Debye length in field-effect biosensors | |
| US20050147741A1 (en) | Fabrication of array PH sensitive EGFET and its readout circuit | |
| CN120142378A (en) | Ion sensing field effect transistor structure with annular fluid trench |