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TWI902672B - Chemical liquid housing - Google Patents

Chemical liquid housing

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Publication number
TWI902672B
TWI902672B TW108129496A TW108129496A TWI902672B TW I902672 B TWI902672 B TW I902672B TW 108129496 A TW108129496 A TW 108129496A TW 108129496 A TW108129496 A TW 108129496A TW I902672 B TWI902672 B TW I902672B
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TW
Taiwan
Prior art keywords
liquid
organic compound
container
solution
metal
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Application number
TW108129496A
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Chinese (zh)
Other versions
TW202026764A (en
Inventor
清水哲也
上村哲也
大松禎
高橋智美
Original Assignee
日商富士軟片股份有限公司
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Publication of TW202026764A publication Critical patent/TW202026764A/en
Application granted granted Critical
Publication of TWI902672B publication Critical patent/TWI902672B/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/06Silver salts
    • G03F7/063Additives or means to improve the lithographic properties; Processing solutions characterised by such additives; Treatment after development or transfer, e.g. finishing, washing; Correction or deletion fluids
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65DCONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D23/00Details of bottles or jars not otherwise provided for
    • B65D23/02Linings or internal coatings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65DCONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D85/00Containers, packaging elements or packages, specially adapted for particular articles or materials
    • B65D85/70Containers, packaging elements or packages, specially adapted for particular articles or materials for materials not otherwise provided for
    • B65D85/84Containers, packaging elements or packages, specially adapted for particular articles or materials for materials not otherwise provided for for corrosive chemicals
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • H10P52/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Engineering (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Packging For Living Organisms, Food Or Medicinal Products That Are Sensitive To Environmental Conditiond (AREA)
  • Details Of Rigid Or Semi-Rigid Containers (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本發明的課題在於提供一種收容缺陷抑制性能優異之藥液之藥液收容體。本發明的藥液收容體具有容器及收容於容器內之藥液,藥液含有溶劑、包含金屬原子之含金屬的粒子及ClogP值高於溶劑的ClogP值的有機化合物,含金屬的粒子的含量相對於藥液的總質量為10質量ppt以下,包含ClogP值高於溶劑的ClogP值的有機化合物之氣體存在於容器的空隙部內,氣體中的有機化合物和藥液中的有機化合物的含量的合計相對於藥液的總質量為100,000質量ppt以下。The present invention addresses the problem of providing a liquid containment body for a liquid with excellent containment defect suppression performance. The liquid containment body of the present invention comprises a container and a liquid contained within the container. The liquid contains a solvent, metal-containing particles containing metal atoms, and organic compounds with a ClogP value higher than that of the solvent. The content of the metal-containing particles relative to the total mass of the liquid is less than 10 mass ppt. A gas containing organic compounds with a ClogP value higher than that of the solvent is present in the voids of the container. The total content of the organic compounds in the gas and the organic compounds in the liquid is less than 100,000 mass ppt relative to the total mass of the liquid.

Description

藥液收容體Drug container

本發明係關於一種藥液收容體。 This invention relates to a container for a pharmaceutical liquid.

藉由包含光微影之配線形成步驟製造半導體器件時,作為預濕液、光阻液、顯影液、沖洗液、剝離液、化學機械研磨(CMP:Chemical Mechanical Polishing)漿料及CMP後的清洗液等,可使用含有水和/或有機溶劑之藥液。 When manufacturing semiconductor devices using a wiring process incorporating photolithography, solutions containing water and/or organic solvents can be used as pre-wetting solutions, photoresist, developer, rinsing solutions, stripping solutions, chemical mechanical polishing (CMP) slurries, and post-CMP cleaning solutions.

藥液在製造後收容於容器中,並以藥液收容體的形態保管一定時間之後,取出所收容之藥液而使用。 After manufacturing, the liquid medicine is contained in a container and stored in this container form for a certain period of time before being removed and used.

作為該等藥液收容體,在專利文獻1中記載有,“一種玻璃容器,其用於酚醛清漆樹脂系正型光阻劑,該玻璃容器的特徵為,在加熱下利用氟化烴氣體及亞硫酸氣體處理其內表面,並且在其中收納有基於有機溶劑之酚醛清漆樹脂系正型光阻劑溶液。 As a container for such liquid solutions, Patent Document 1 describes "a glass container for use with phenolic varnish resin-based positive photoresist, characterized in that its inner surface is treated with fluoride gas and sulfurous acid gas under heating, and that it contains an organic solvent-based phenolic varnish resin-based positive photoresist solution."

[先前技術文獻] [Previous Technical Documents] [專利文獻] [Patent Documents]

[專利文獻1]日本特開平11-029148號公報 [Patent Document 1] Japanese Patent Application Publication No. 11-029148

有時藥液中所包含之各種雜質會成為半導體器件的缺陷的原因。有時該等缺陷會引起半導體器件的製造產量的降低及短路等電氣異常。 Sometimes, impurities in the chemical solution can cause defects in semiconductor devices. These defects can lead to reduced manufacturing yields and electrical malfunctions such as short circuits.

本發明人等從藥液收容體取出藥液並應用於包含光微影之配線形成步 驟中,其結果發現了有時在配線基板上會產生缺陷。 The inventors removed the liquid from the liquid container and applied it to a wiring formation step involving photolithography. The results showed that defects sometimes occurred on the wiring substrate.

本發明的課題在於提供一種收容缺陷抑制性能優異之藥液之藥液收容體。 The problem of this invention is to provide a liquid containment body for a liquid with excellent containment defect suppression performance.

本發明人等對上述課題進行了深入研究之結果發現如下而完成了本發明,亦即,將含金屬的粒子的含量在規定範圍內的藥液收容於容器之藥液收容體中,只要藥液中的有機化合物的含量與存在於容器的空隙之有機化合物的含量的合計相對於藥液的總質量在規定範圍內,則可得到缺陷抑制性能優異之藥液。 The inventors, through in-depth research into the aforementioned problem, discovered the following and thus completed this invention: a liquid containing metal particles within a specified range is contained within a liquid container. As long as the total content of organic compounds in the liquid and the content of organic compounds present in the pores of the container, relative to the total mass of the liquid, is within a specified range, a liquid with excellent defect suppression performance can be obtained.

亦即,本發明人等發現了藉由以下的構成能夠解決上述課題。 In other words, the inventors have discovered that the above-mentioned problems can be solved by the following configuration.

〔1〕 [1]

一種藥液收容體,其具有容器及收容於上述容器內之藥液,其中上述藥液含有溶劑、包含金屬原子之含金屬的粒子及ClogP值高於上述溶劑的ClogP值的有機化合物,含上述金屬的粒子的含量相對於上述藥液的總質量為10質量ppt以下,包含ClogP值高於上述溶劑的ClogP值的有機化合物之氣體存在於上述容器的空隙部中,上述氣體中的上述有機化合物和上述藥液中的上述有機化合物的含量的合計相對於上述藥液的總質量為100,000質量ppt以下。 A pharmaceutical liquid container includes a container and a pharmaceutical liquid contained within the container. The pharmaceutical liquid contains a solvent, metal-containing particles containing metal atoms, and an organic compound with a ClogP value higher than that of the solvent. The content of the metal-containing particles is less than 10 ppt by mass relative to the total mass of the pharmaceutical liquid. A gas containing the organic compound with a ClogP value higher than that of the solvent is present in the pores of the container. The total content of the organic compound in the gas and the organic compound in the pharmaceutical liquid is less than 100,000 ppt by mass relative to the total mass of the pharmaceutical liquid.

〔2〕 [2]

如〔1〕所述之藥液收容體,其中含上述金屬的粒子的含量相對於上述藥液的總質量為0.001~10質量ppt, 上述氣體中的上述有機化合物和上述藥液中的上述有機化合物的含量的合計相對於上述藥液的總質量為0.1~100,000質量ppt。 The liquid container as described in [1] contains particles of the aforementioned metal in an amount of 0.001 to 10 ppm relative to the total mass of the liquid, and the total content of the aforementioned organic compounds in the gas and the aforementioned organic compounds in the liquid is 0.1 to 100,000 ppm relative to the total mass of the liquid.

〔3〕 [3]

如〔1〕或〔2〕所述之藥液收容體,其中上述氣體中的上述有機化合物和上述藥液中的上述有機化合物的含量的合計與含上述金屬的粒子的含量之質量比例為0.01~100,000。 The pharmaceutical container as described in [1] or [2], wherein the mass ratio of the total content of the aforementioned organic compounds in the gas and the aforementioned organic compounds in the pharmaceutical liquid to the content of the aforementioned metal-containing particles is 0.01 to 100,000.

〔4〕 [4]

如〔1〕~〔3〕中任一項所述之藥液收容體,其中上述氣體中的上述有機化合物及上述藥液中的上述有機化合物的ClogP值均為6以上。 The liquid medicine container as described in any of [1] to [3], wherein the ClogP value of both the organic compound in the gas and the organic compound in the liquid medicine is 6 or higher.

〔5〕 [5]

如〔1〕~〔4〕中任一項所述之藥液收容體,其中上述氣體中的上述有機化合物及上述藥液中的上述有機化合物均包含鄰苯二甲酸酯。 The liquid container as described in any of [1] to [4], wherein the organic compounds in the gas and the organic compounds in the liquid both contain phthalates.

〔6〕 [6]

如〔5〕所述之藥液收容體,其中上述鄰苯二甲酸酯包含選自包括鄰苯二甲酸二辛酯及鄰苯二甲酸二異壬酯之群組中之至少1種。 The liquid container as described in [5] contains, wherein the phthalate comprises at least one selected from the group consisting of dioctyl phthalate and diisononyl phthalate.

〔7〕 [7]

如〔6〕所述之藥液收容體,其中上述鄰苯二甲酸二辛酯的含量與上述鄰苯二甲酸二異壬酯的含量之質量比例為1以上。 The liquid container as described in [6] contains a drug solution in which the mass ratio of the content of dioctyl phthalate to the content of diisononyl phthalate is 1 or more.

〔8〕 [8]

如〔1〕~〔7〕中任一項所述之藥液收容體,其中上述藥液中的上述有機化合物的含量與上述氣體中的上述有機化合物的含量之質量比例為1以上。 The liquid container as described in any one of [1] to [7], wherein the mass ratio of the content of the aforementioned organic compound in the liquid to the content of the aforementioned organic compound in the gas is 1 or more.

〔9〕 [9]

如〔1〕~〔8〕中任一項所述之藥液收容體,其中上述溶劑為有機溶劑。 The liquid container as described in any of [1] to [8], wherein the solvent is an organic solvent.

〔10〕 [10]

如〔9〕所述之藥液收容體,其中上述有機溶劑為選自包括環己酮、乙酸丁酯、N-甲基-2-吡咯啶酮、4-甲基-2-戊醇、乳酸乙酯、丙二醇單甲醚乙酸酯、丙二醇單乙醚、碳酸丙二酯、乙酸異戊酯、丙二醇單甲醚、丙二醇單丙醚、甲氧基丙酸甲酯、環戊酮、γ-丁內酯、二異戊醚、異丙醇、二甲基亞碸、二乙二醇、乙二醇、二丙二醇、丙二醇、碳酸乙二酯、環丁碸、環庚酮及2-庚酮、丁酸丁酯、異丁酸異丁酯、十一烷、丙酸戊酯、丙酸異戊酯、乙基環己烷、均三甲苯及癸烷之群組中之至少1種。 The liquid container as described in [9] contains an organic solvent selected from at least one selected from the group consisting of cyclohexanone, butyl acetate, N-methyl-2-pyrrolidone, 4-methyl-2-pentanol, ethyl lactate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, propylene carbonate, isoamyl acetate, propylene glycol monomethyl ether, propylene glycol monopropyl ether, methyl methoxypropionate, cyclopentanone, γ-butyrolactone, diisoamyl ether, isopropanol, dimethyl sulfoxide, diethylene glycol, ethylene glycol, dipropylene glycol, propylene glycol, ethylene carbonate, cyclobutanone, cycloheptanone and 2-heptanone, butyl butyrate, isobutyl isobutyrate, undecane, amyl propionate, isoamyl propionate, ethylcyclohexane, mesitylene and decane.

〔11〕 [11]

如〔1〕~〔10〕中任一項所述之藥液收容體,其中含上述金屬的粒子中的粒徑為0.5~17nm的金屬奈米粒子在每單位體積的上述藥液中的含粒子的數量為1.0×101~1.0×109個/cm3The drug solution container as described in any of [1] to [10], wherein the number of metal nanoparticles with a particle size of 0.5 to 17 nm in each unit volume of the drug solution is 1.0 × 10¹ to 1.0 × 10⁹ particles/ cm³ .

〔12〕 [12]

如〔1〕~〔11〕中任一項所述之藥液收容體,其中 上述氣體包含氮氣,上述氮氣的含量相對於上述空隙部的總容量為95~99.9999體積%,上述氣體中的上述有機化合物的含量相對於上述藥液的總質量為0.05~50,000質量ppt。 The liquid container as described in any one of [1] to [11], wherein the gas comprises nitrogen, the nitrogen content is 95 to 99.9999% of the total volume of the voids, and the content of the organic compound in the gas is 0.05 to 50,000 ppt of the total mass of the liquid.

〔13〕 [13]

如〔1〕~〔12〕中任一項所述之藥液收容體,其中上述藥液收容體中的上述容器的孔隙率為50~99.99體積%。 The liquid medicine container as described in any of [1] to [12], wherein the porosity of the container in the liquid medicine container is 50 to 99.99% by volume.

〔14〕 [14]

如〔1〕~〔13〕中任一項所述之藥液收容體,其中上述容器的接液部的至少一部分為氟樹脂、被電解研磨之不鏽鋼或玻璃。 The liquid container as described in any of [1] to [13], wherein at least a portion of the liquid-receiving portion of the container is made of fluororesin, electrolytically polished stainless steel, or glass.

〔15〕 [15]

如〔14〕所述之藥液收容體,其中在上述容器的接液部的至少一部分為上述被電解研磨之不鏽鋼之情況下,上述容器的接液部的平均表面粗糙度Ra小於100nm。 As described in [14], in the case where at least a portion of the liquid-receiving portion of the container is made of the electrolytically polished stainless steel, the average surface roughness Ra of the liquid-receiving portion of the container is less than 100 nm.

〔16〕 [16]

如〔14〕所述之藥液收容體,其中上述容器的接液部的至少一部分與上述氟樹脂一同還包含導電性材料。 As described in [14], at least a portion of the liquid-receiving portion of the container, together with the fluororesin, also comprises a conductive material.

〔17〕 [17]

如〔16〕所述之藥液收容體,其中上述導電性材料包含碳。 The liquid container as described in [16] contains carbon as the conductive material.

〔18〕 [18]

如〔17〕所述之藥液收容體,其中上述碳為選自包括碳粒子、奈米碳管及碳填充劑之群組中之至少1種。 As described in [17], the carbon is selected from at least one of the group consisting of carbon particles, carbon nanotubes, and carbon fillers.

〔19〕 [19]

如〔1〕~〔18〕中任一項所述之藥液收容體,其中上述藥液用作選自包括顯影液、沖洗液、晶圓清洗液、線清洗液、預濕液、光阻液、下層膜形成用液、上層膜形成用液及硬塗形成用液之群組中之至少1種液體的原料。 The liquid container as described in any one of [1] to [18], wherein the liquid is used as a raw material selected from at least one liquid selected from the group consisting of developer, washing solution, wafer cleaning solution, wire cleaning solution, pre-wetting solution, photoresist, lower film forming solution, upper film forming solution, and hard coating forming solution.

如以下所示,依據本發明,能夠提供一種收容缺陷抑制性能優異之藥液之藥液收容體。 As shown below, according to the present invention, a drug container with excellent defect suppression performance can be provided for a drug solution.

以下,對本發明進行說明。 The present invention will now be described.

以下所記載之構成要件的說明有時基於本發明的代表性實施形態來進行,但本發明並不限定於該等實施形態者。 The following description of the constituent elements is sometimes based on representative embodiments of the invention, but the invention is not limited to those embodiments.

另外,本說明書中,使用“~”表示之數值範圍係指將“~”前後所記載之數值作為下限值及上限值而包含之範圍。 Furthermore, in this manual, the range of values represented by "~" refers to the range encompassed by the values before and after "~" as the lower and upper limits.

又,本發明中,“ppm”係指“parts-per-million:百萬分之一(10-6)”,“ppb”係指“parts-per-billion:十億分之一(10-9)”,“ppt”係指“parts-per-trillion:一兆分之一(10-12)”,“ppq”係指“parts-per-quadrillion:千兆分之一(10-15)”。 Furthermore, in this invention, "ppm" refers to "parts-per-million ( 10⁻⁶ )", "ppb" refers to "parts-per-billion ( 10⁻⁹ )", "ppt" refers to "parts-per-trillion ( 10⁻¹² )", and "ppq" refers to "parts-per-quadrillion ( 10⁻¹⁵ )".

又,本發明中的基團(原子團)的標記中,未標有經取代及未經取代之標記在不損害本發明的效果的範圍內,不僅包含不具有取代基者,還包含具有取代基者。例如,所謂“烴基”,不僅包含不具有取代基之烴基(未取代烴基),還包含具有取代基之烴基(取代烴基)者。關於該方面,對與各化合物亦相同。 Furthermore, in the designation of group (atomic group) in this invention, the absence of markings indicating whether it is substituted or unsubstituted, to the extent that it does not impair the effect of this invention, includes not only those without substituents but also those with substituents. For example, the term "alkali" includes not only unsubstituted alkalis (unsubstituted alkalis) but also substituted alkalis (substituted alkalis). This applies to all compounds as well.

又,本發明中的“放射線”例如係指遠紫外線、極紫外線(EUV;Extreme ultraviolet)、X射線或電子束等。又,本發明中“光”係指光化射線或放射線。所謂本發明中的“曝光”,除非另有說明,否則不僅包含利用遠紫外線、X射線或EUV等之曝光,還包含利用電子束或離子束等粒子束之描繪。 Furthermore, "radiation" in this invention refers to, for example, far-ultraviolet radiation, extreme ultraviolet radiation (EUV), X-rays, or electron beams. Also, "light" in this invention refers to photochemical radiation or radiation. Unless otherwise stated, "exposure" in this invention includes not only exposure using far-ultraviolet radiation, X-rays, or EUV, but also depiction using particle beams such as electron beams or ion beams.

〔藥液收容體〕 [Drug Liquid Containment Container]

本發明的藥液收容體(以下,亦稱為“本藥液收容體”。)為具有容器及收容於上述容器內之藥液之藥液收容體。 The liquid medicine container of this invention (hereinafter also referred to as "this liquid medicine container") is a liquid medicine container having a container and a liquid medicine contained within the container.

又,本藥液收容體中,上述藥液含有溶劑、包含金屬原子之含金屬的粒子及ClogP值高於上述溶劑的ClogP值的有機化合物(以下,亦稱為“特定有機化合物A”。)。 Furthermore, within this drug solution container, the aforementioned drug solution contains a solvent, metal-containing particles containing metal atoms, and an organic compound with a ClogP value higher than that of the solvent (hereinafter also referred to as "specific organic compound A").

又,本藥液收容體中,含上述金屬的粒子的含量相對於上述藥液的總質量為10質量ppt以下。 Furthermore, in this pharmaceutical solution container, the content of particles containing the aforementioned metals is less than 10 ppt relative to the total mass of the pharmaceutical solution.

又,本藥液收容體中,包含ClogP值高於上述溶劑的ClogP值的有機化合物(以下,亦稱為“特定有機化合物B”。)之氣體存在於上述容器的空隙部中,上述特定有機化合物A和上述特定有機化合物B的含量的合計相對於上述藥液的總質量為100,000質量ppt以下。 Furthermore, in this pharmaceutical solution container, a gas containing an organic compound (hereinafter also referred to as "specific organic compound B") with a ClogP value higher than that of the solvent is present in the pores of the container, and the total content of the specific organic compound A and the specific organic compound B is less than 100,000 ppt relative to the total mass of the pharmaceutical solution.

雖然藉由本藥液收容體來解決上述問題之機制不一定明確,但是對於 該機制,本發明人等推測如下。另外,以下機制為推測,即使在藉由不同的機制獲得本發明的效果之情況下,亦包含在本發明的範圍內。 While the mechanism by which this liquid containment device solves the aforementioned problems may not be entirely clear, the inventors hypothesize the following mechanism. Furthermore, this mechanism is hypothetical, and even if the effects of this invention are achieved through different mechanisms, they are still included within the scope of this invention.

藥液中所包含之有機化合物及含金屬的粒子其本身亦會成為缺陷的原因,但是兩者聚集而容易形成作為產生缺陷的原因之複合粒子。尤其,包含ClogP值高於溶劑的ClogP值的有機化合物(特定有機化合物)之情況下,容易形成特定有機化合物與含金屬的粒子的複合粒子,從而缺陷的產生變得顯著。 Organic compounds and metal particles contained in the solution can themselves be causes of defects, but their aggregation easily forms complex particles that contribute to defect formation. In particular, the presence of organic compounds with a ClogP value higher than that of the solvent (specific organic compounds) easily leads to the formation of complex particles combining these specific organic compounds and metal particles, thus making defect formation more significant.

作為該課題的解決方案,可以考慮使藥液中的特定有機化合物的含量降低之方法。然而,有時在本方法中會無法充分抑制缺陷的產生。 As a solution to this problem, methods to reduce the content of specific organic compounds in the drug solution could be considered. However, sometimes this method cannot adequately suppress the generation of defects.

認為其原因在於,在輸送及保存藥液收容體等時,容器的空隙部的氣體中所包含之特定有機化合物會混入到藥液中。亦即,有時在將藥液收容於容器中之情況下,特定有機化合物的含量相比剛製造藥液之後(收容於容器之前)變多,從而缺陷的產生變得顯著。 The reason is believed to be that certain organic compounds contained in the gas within the container's pores can mix into the liquid during transport and storage. In other words, sometimes the content of these specific organic compounds increases when the liquid is contained in a container compared to immediately after manufacturing (before being contained), thus making the defect more pronounced.

推測為本藥液收容體中,特定有機化合物A和特定有機化合物B的含量的合計在上述範圍內,因此可以得到收容缺陷抑制性能優異之藥液之藥液收容體。 It is presumed that the total content of specific organic compound A and specific organic compound B in this drug solution container falls within the aforementioned range, thus resulting in a drug solution container with excellent containment defect suppression performance.

〔藥液〕 [Medicinal Solution]

藥液含有溶劑、包含金屬原子之含金屬的粒子及ClogP值高於上述溶劑的ClogP值的有機化合物(特定有機化合物A)。 The solution contains a solvent, metal-containing particles containing metal atoms, and an organic compound (specific organic compound A) with a ClogP value higher than that of the solvent.

<溶劑> Solvents

藥液含有溶劑。作為溶劑,可舉出水及有機溶劑中的至少一個,有機溶劑為較佳。 The solution contains a solvent. At least one of water and organic solvents can be cited as solvents, with organic solvents being preferred.

另外,在本說明書中,所謂有機溶劑,係指相對於藥液的總質量,以超過10,000質量ppm之含量含有每1種成分之液態有機化合物。亦即,本說明書中,相對於藥液的總質量,超過10,000質量ppm而含有之液狀的有機化合物相當於有機溶劑。 Furthermore, in this instruction manual, the term "organic solvent" refers to the liquid organic compound present in a concentration exceeding 10,000 ppm (parts by mass) of each component relative to the total mass of the drug solution. In other words, in this instruction manual, liquid organic compounds present in a concentration exceeding 10,000 ppm (parts by mass) relative to the total mass of the drug solution are considered organic solvents.

另外,在本說明書中,所謂液態,係指在25℃、大氣壓下為液體。 Furthermore, in this instruction manual, the term "liquid" refers to a liquid state at 25°C and atmospheric pressure.

作為有機溶劑的種類,並無特別限制,可使用公知的有機溶劑。作為有機溶劑,例如,可舉出伸烷基二醇單烷基醚羧酸酯、伸烷基二醇單烷基醚、乳酸烷基酯、烷氧基丙酸烷基酯、環狀內酯(較佳為碳數4~10)、可以具有環之單酮化合物(較佳為碳數4~10)、碳酸伸烷酯、烷氧基乙酸烷基酯及丙酮酸烷基酯等。 There are no particular restrictions on the type of organic solvent used; any known organic solvent can be used. Examples of organic solvents include, for instance, alkyl glycol monoalkyl ether carboxylic esters, alkyl glycol monoalkyl ethers, alkyl lactate esters, alkyl alkoxypropionate esters, cyclic lactones (preferably with 4 to 10 carbon atoms), monoketone compounds that may have a ring (preferably with 4 to 10 carbon atoms), alkyl carbonates, alkyl alkoxyacetic acids, and alkyl pyruvate esters.

又,作為有機溶劑,例如可使用日本特開2016-057614號公報、日本特開2014-219664號公報、日本特開2016-138219號公報及日本特開2015-135379號公報中所記載者。 Furthermore, as an organic solvent, for example, those described in Japanese Patent Application Publication Nos. 2016-057614, 2014-219664, 2016-138219, and 2015-135379 may be used.

作為有機溶劑,選自包括丙二醇單甲醚、丙二醇單乙醚(PGME)、丙二醇單丙醚、丙二醇單甲醚乙酸酯(PGMEA)、乳酸乙酯(EL)、甲氧基丙酸甲酯、環戊酮、環己酮(CHN)、γ-丁內酯、二異戊醚、乙酸丁酯(nBA)、乙酸異戊酯(iAA)、異丙醇、4-甲基-2-戊醇(MIBC)、二甲基亞碸、N-甲基-2-吡咯啶酮(NMP)、二乙二醇、乙二醇、二丙二醇、丙二醇、碳酸乙二酯、碳酸丙二酯(PC)、環丁碸、環庚酮、1-己醇、癸烷、2-庚酮、丁酸丁酯、異丁酸異丁酯、十一烷、丙酸戊酯、丙酸異戊酯、乙基環己烷及均三甲苯之群組中之至少1種為較佳。 As organic solvents, those selected include propylene glycol monomethyl ether, propylene glycol monoethyl ether (PGME), propylene glycol monopropyl ether, propylene glycol monomethyl ether acetate (PGMEA), ethyl lactate (EL), methyl methoxypropionate, cyclopentanone, cyclohexanone (CHN), γ-butyrolactone, diisopentanone, butyl acetate (nBA), isoamyl acetate (iAA), isopropanol, and 4-methyl-2-pentanol (M At least one of the following groups is preferred: IBC, dimethyl sulfoxide, N-methyl-2-pyrrolidone (NMP), diethylene glycol, ethylene glycol, dipropylene glycol, propylene glycol, ethylene carbonate, propylene carbonate (PC), cyclobutane, cycloheptanone, 1-hexanol, decane, 2-heptanone, butyl butyrate, isobutyl isobutyrate, undecane, pentyl propionate, isoamyl propionate, ethylcyclohexane, and mesitylene.

其中,從缺陷抑制性能更優異之方面考慮,選自包括CHN、nBA、NMP、 EL、PGMEA、PGME、PC、iAA、丙二醇單甲醚、丙二醇單丙醚、甲氧基丙酸甲酯、環戊酮、γ-丁內酯、二異戊醚、異丙醇、二甲基亞碸、二乙二醇、乙二醇、二丙二醇、丙二醇、碳酸乙二酯、環丁碸、環庚酮、2-庚酮、丁酸丁酯、異丁酸異丁酯、十一烷、丙酸戊酯、丙酸異戊酯、乙基環己烷、均三甲苯及癸烷之群組中之至少1種為更佳。 Among these, considering superior defect suppression performance, at least one ingredient selected from the group consisting of CHN, nBA, NMP, EL, PGMEA, PGME, PC, iAA, propylene glycol monomethyl ether, propylene glycol monopropyl ether, methyl methoxypropionate, cyclopentanone, γ-butyrolactone, diisopentanone, isopropanol, dimethyl sulfoxide, diethylene glycol, ethylene glycol, dipropylene glycol, propylene glycol, ethylene carbonate, cyclobutanone, cycloheptanone, 2-heptanone, butyl butyrate, isobutyl isobutyrate, undecane, pentyl propionate, isopentyl propionate, ethylcyclohexane, mesitylene, and decane is preferred.

作為藥液中的有機溶劑的含量並無特別限制,但是通常相對於藥液的總質量,98.0質量%以上為較佳,99.0質量%以上為更佳,99.9質量%以上為進一步較佳,99.99質量%以上為特佳。上限並無特別限制,但是多為小於100質量%。 There are no particular restrictions on the content of organic solvents in the solution, but generally, relative to the total mass of the solution, 98.0% by mass or higher is preferred, 99.0% by mass or higher is even better, 99.9% by mass or higher is further preferred, and 99.99% by mass or higher is exceptionally preferred. There is no particular upper limit, but it is usually less than 100% by mass.

有機溶劑可以單獨使用1種,亦可以併用2種以上。併用2種以上的有機溶劑之情況下,合計含量在上述範圍內為較佳。 Organic solvents can be used alone or in combination with two or more. When using two or more organic solvents, it is preferable that the total content be within the above-mentioned range.

另外,藥液中的有機溶劑的種類及含量能夠使用氣相層析質譜儀來進行測量。 In addition, the type and content of organic solvents in the drug solution can be measured using gas chromatography-mass spectrometry.

<含金屬的粒子> <Metal-containing particles>

藥液包含含有金屬原子之含金屬的粒子。 The liquid contains metal particles that contain metal atoms.

以下對製造藥液之方法的較佳形態進行敘述,但是通常藥液能夠對含有已經說明之溶劑及有機化合物之被純化物進行純化來製造。含金屬的粒子可以根據目的添加到藥液的製造步驟中,亦可以直接包含於被純化物中或以可以在藥液的製造過程中從藥液的製造裝置等遷移(所謂之污染)。 The following describes a preferred form of the method for manufacturing a pharmaceutical solution; however, pharmaceutical solutions are generally manufactured by purifying a substance containing a pre-described solvent and organic compounds. Metal particles can be added to the pharmaceutical solution manufacturing process, depending on the intended use; they can also be directly contained in the substance being purified, or they can migrate from the pharmaceutical solution manufacturing apparatus during the manufacturing process (so-called contamination).

作為金屬原子並無特別限制,但是可舉出Fe原子、Al原子、Cr原子、Ni原子、Pb原子、Zn原子及Ti原子等。其中,若對含有Fe原子、Al原子、Pb原子、Zn原子及Ti原子之含金屬的粒子的藥液中的含量嚴格 地進行控制,則容易得到更優異之缺陷抑制性能,並且若對含有Pb原子及Ti原子之含金屬的粒子的藥液中的含量嚴格地進行控制,則容易得到更優異之缺陷抑制性能。 There are no particular restrictions on the metal atoms used, but examples include Fe, Al, Cr, Ni, Pb, Zn, and Ti atoms. Among these, strictly controlling the content of metal-containing particles (Fe, Al, Pb, Zn, and Ti) in the solution can easily yield superior defect suppression performance. Furthermore, strictly controlling the content of Pb and Ti-containing particles in the solution can easily lead to even better defect suppression performance.

亦即,作為金屬原子,選自包括Fe原子、Al原子、Cr原子、Ni原子、Pb原子、Zn原子及Ti原子等之群組中之至少1種為較佳,選自包括Fe原子、Al原子、Pb原子、Zn原子及Ti原子之群組中之至少1種為更佳,選自包括Pb原子及Ti原子之群組中之至少1種為進一步較佳,含金屬的粒子含有Pb原子及Ti原子中的任一個為特佳。 That is, as a metal atom, it is preferable to select at least one from the group including Fe, Al, Cr, Ni, Pb, Zn, and Ti atoms; more preferably, it is preferable to select at least one from the group including Fe, Al, Pb, Zn, and Ti atoms; even more preferably, it is preferable to select at least one from the group including Pb and Ti atoms; and it is especially preferable that the metal-containing particle contains either Pb or Ti atoms.

另外,含金屬的粒子可以單獨含有1種上述金屬原子,亦可以一併含有2種以上。 Furthermore, metal-containing particles may contain only one of the aforementioned metal atoms, or they may contain two or more of them.

作為含金屬的粒子的粒徑並無特別限制,但是,例如,在半導體器件製造用藥液中,具有0.1~100nm左右的粒徑之粒子在藥液中的含量成為控制對象的情況較多。 While there are no particular restrictions on the particle size of metal-containing particles, the content of particles with a size of approximately 0.1 to 100 nm is often a controlled factor, for example, in semiconductor device manufacturing solutions.

其中,依據本發明人等的研究中已知,尤其在應用於EUV(極紫外線)曝光的光刻膠製程之藥液中,藉由控制其粒徑為0.5~17nm的含金屬的粒子(以下,亦稱為“金屬奈米粒子”。)在藥液中的含量,容易得到具有優異之缺陷抑制性能之藥液。EUV曝光的光刻膠製程中,多為要求微細的阻劑間隔、阻劑寬度及阻劑間隙。該等情況下,要求對習知之製程中沒有任何問題之更微細的粒子,以其個數單位進行控制。 As is known from the inventors' research, particularly in the photoresist manufacturing process using EUV (Extreme Ultraviolet) exposure, by controlling the content of metal-containing particles (hereinafter also referred to as "metal nanoparticles") with a particle size of 0.5~17nm in the solution, it is easy to obtain a solution with excellent defect suppression performance. In EUV photoresist manufacturing processes, fine resist spacing, resist width, and resist gaps are often required. In such cases, it is necessary to control the number of even finer particles, which do not cause any problems in conventional processes.

作為含金屬的粒子的個數基準的粒徑分佈並無特別限制,但是從得到具有更優異之本發明的效果之藥液之觀點考慮,在選自包括粒徑小於5nm的範圍及粒徑超過17nm之範圍之群組中之至少一個具有極大值為較 佳。 There are no particular limitations on the particle size distribution used as a criterion for the number of metal-containing particles. However, from the viewpoint of obtaining a drug solution with superior effects of the present invention, it is preferable that at least one of the groups selected, including those with particle sizes less than 5 nm and those with particle sizes greater than 17 nm, has an extreme value.

換言之,在粒徑為5~17nm的範圍沒有極大值為較佳。藉由在粒徑為5~17nm的範圍沒有極大值,藥液具有更優異之缺陷抑制性能、尤其具有更優異之橋接缺陷抑制性能。其中,橋接缺陷係指配線圖案彼此的交聯狀的不良。 In other words, it is preferable that there are no maximum values in the particle size range of 5-17 nm. By ensuring that there are no maximum values in the particle size range of 5-17 nm, the solution exhibits superior defect suppression performance, especially superior bridging defect suppression performance. Bridging defects refer to poor interconnections between wiring patterns.

又,從得到具有更優異之本發明的效果之藥液之方面考慮,在個數基準的粒徑分佈中粒徑為0.5nm以上且小於5nm的範圍具有極大值為特佳。藉由上述,藥液具有更優異之橋接缺陷抑制性能。 Furthermore, considering the need for a solution exhibiting superior effects compared to this invention, it is particularly desirable to have an extremely large particle size distribution in the range of 0.5 nm or larger and smaller than 5 nm. Through the above, the solution demonstrates superior bridging defect suppression performance.

含金屬的粒子的含量相對於藥液的總質量為10質量ppt以下,0.001~10質量ppt為較佳。 The content of metal particles relative to the total mass of the drug solution should be less than 10 ppt, with 0.001 to 10 ppt being preferred.

若含金屬的粒子的含量為10質量ppt以下,則能夠抑制因含金屬的粒子的聚集物而引起之缺陷。若含金屬的粒子的含量為0.01質量ppt以上,則詳細理由雖不明確,但是含金屬的粒子與配線基板的相互作用變小,含金屬的粒子難以殘留於基板上,因此能夠抑制缺陷。 If the content of metal particles is less than 10 ppt by mass, defects caused by metal particle aggregation can be suppressed. If the content of metal particles is 0.01 ppt by mass or more, although the exact reason is unclear, the interaction between the metal particles and the wiring substrate is reduced, making it difficult for the metal particles to remain on the substrate, thus suppressing defects.

從更發揮上述效果之方面考慮,含金屬的粒子的含量的上限值為5質量ppt以下為較佳,1質量ppt以下為較佳,0.1質量ppt以下為特佳。 To maximize the aforementioned effects, the upper limit for the content of metal particles is preferably below 5 ppt (mass weight), preferably below 1 ppt (mass weight), and ideally below 0.1 ppt (mass weight).

從更發揮上述效果之方面考慮,含金屬的粒子的含量的下限值為0.001質量ppt以上為較佳,0.01質量ppt以上為特佳。 To maximize the aforementioned effects, a minimum metal particle content of 0.001 ppt is preferred, and 0.01 ppt is exceptionally preferred.

含金屬的粒子的種類及含量能夠藉由SP-ICP-MS法(Single Nano Particle Inductively Coupled Plasma Mass Spectrometry:單奈米粒子感應耦合電漿質譜法)來測量。 The types and amounts of metal-containing particles can be measured using SP-ICP-MS (Single Nano Particle Inductively Coupled Plasma Mass Spectrometry).

在此,所謂SP-ICP-MS法,使用與通常的ICP-MS法(感應耦合電漿 質譜法)相同的裝置,而只有資料分析不同。SP-ICP-MS法的資料分析能夠藉由市售的軟體來實施。 The SP-ICP-MS method used here employs the same apparatus as the conventional ICP-MS (Inductively Coupled Plasma Mass Spectrometry) method, differing only in data analysis. Data analysis for the SP-ICP-MS method can be performed using commercially available software.

ICP-MS中,對於成為測量對象之金屬成分的含量,與其存在形態無關地進行測量。另外,金屬成分係指金屬離子及含金屬的粒子。因此,確定成為測量對象之含金屬的粒子和金屬離子的總質量來作為金屬成分的含量。 In ICP-MS, the content of the metal component being measured is independent of its form of existence. Furthermore, the metal component refers to metal ions and metal-containing particles. Therefore, the total mass of the metal-containing particles and metal ions being measured is determined as the content of the metal component.

另一方面,SP-ICP-MS法中,能夠測量含金屬的粒子的含量。因此,若自試樣中的金屬成分的含量減去含金屬的粒子的含量,則能夠算出試樣中的金屬離子的含量。 On the other hand, SP-ICP-MS can measure the content of metal-containing particles. Therefore, by subtracting the content of metal-containing particles from the content of metal components in the sample, the content of metal ions in the sample can be calculated.

作為SP-ICP-MS法的裝置,例如可舉出Agilent Technologies公司製造,Agilent8800三重四極ICP-MS(inductively coupled plasma mass spectrometry:感應耦合電漿質譜法,用於半導體分析,選項#200),能夠藉由實施例中所記載之方法來進行測量。作為除了上述以外的其他裝置,除PerkinElmer Co.,Ltd.製造NexION350S以外,還能夠使用Agilent Technologies公司製造Agilent 8900。 As for devices for SP-ICP-MS, for example, the Agilent Technologies Agilent 8800 triple quadrupole ICP-MS (inductively coupled plasma mass spectrometry, for semiconductor analysis, option #200) can be used to perform measurements by the method described in the embodiments. Other devices besides the above, in addition to the PerkinElmer Co., Ltd. NexION 350S, can also be used, such as the Agilent 8900 manufactured by Agilent Technologies.

(金屬奈米粒子) (Metal nanoparticles)

金屬奈米粒子係指含金屬的粒子中的其粒徑為0.5~17nm者。 Metal nanoparticles refer to metal-containing particles with a particle size of 0.5–17 nm.

每單位體積的藥液中金屬奈米粒子的含粒子的數量為1.0×100~1.0×109個/cm3為較佳,從藥液具有更優異之本發明的效果之方面考慮,作為含粒子的數量為1.0×101個/cm3以上為較佳,1.0×107個/cm3以下為較佳,1.0×105個/cm3以下為更佳。 The number of metal nanoparticles per unit volume of the drug solution is preferably 1.0× 10⁰ to 1.0× 10⁹ particles/ cm³ . Considering the superior efficacy of the present invention, a particle count of 1.0× 10¹ particles/ cm³ or higher is preferred, 1.0× 10⁷ particles/ cm³ or lower is preferred, and 1.0× 10⁵ particles/ cm³ or lower is even better.

若每單位體積的藥液中金屬奈米粒子的含粒子的數量為1.0×101~ 1.0×109個/cm3,則藥液具有更優異之缺陷抑制性能。 If the number of metal nanoparticles in each unit volume of the drug solution is 1.0× 10¹ ~ 1.0× 10⁹ particles/ cm³ , then the drug solution has superior defect suppression performance.

另外,藥液中的金屬奈米粒子的含量能夠藉由實施例中所記載之方法來測量,每單位體積的藥液中金屬奈米粒子的粒子數量(個數)以有效數字成為兩位數之方式四捨五入而求出。 Furthermore, the content of metal nanoparticles in the drug solution can be measured using the method described in the embodiments. The number of metal nanoparticles per unit volume of drug solution is calculated by rounding to two significant figures.

作為金屬奈米粒子中所含有之金屬原子並無特別限制,但是與作為含金屬的粒子中所含有之金屬原子而已經說明之原子相同。其中,從得到具有更優異之本發明的效果之藥液之觀點考慮,作為金屬原子,選自包括Pb原子及Ti原子之群組中之至少1種為較佳,金屬奈米粒子含有Pb原子及Ti原子該兩者為更佳。所謂金屬奈米粒子含有Pb原子及Ti原子該兩者,典型地可舉出藥液包含含有Pb原子之金屬奈米粒子和含有Ti原子之金屬奈米粒子該兩者之形態。 There are no particular limitations on the metal atoms contained in the metal nanoparticles, but they are the same as those already described in the description of metal atoms contained in metal-containing particles. From the viewpoint of obtaining a liquid with superior effects of the present invention, it is preferable that the metal atoms be selected from at least one of the group including Pb atoms and Ti atoms, and it is even more preferable that the metal nanoparticles contain both Pb atoms and Ti atoms. The phrase "metal nanoparticles containing both Pb atoms and Ti atoms" typically refers to a liquid containing both Pb-containing metal nanoparticles and Ti-containing metal nanoparticles.

另外,作為藥液中的含有Pb原子之金屬奈米粒子(以下,亦稱為“Pb奈米粒子”。)及含有Ti原子之金屬奈米粒子(以下,亦稱為“Ti奈米粒子”。)的含粒子的數量比(Pb/Ti)並無特別限制,但是通常為1.0×10-4~3.0為較佳,1.0×10-3~2.0為更佳,1.0×10-2~1.5為特佳。若Pb/Ti為1.0×10-3~2.0,則藥液具有更優異之本發明的效果,尤其具有更優異之橋接缺陷抑制性能。 Furthermore, there is no particular limitation on the ratio (Pb/Ti) of the number of Pb-containing metal nanoparticles (hereinafter also referred to as "Pb nanoparticles") and Ti-containing metal nanoparticles (hereinafter also referred to as "Ti nanoparticles") in the solution, but it is generally preferred to be 1.0× 10⁻⁴ to 3.0, more preferred to be 1.0× 10⁻³ to 2.0, and particularly preferred to be 1.0× 10⁻² to 1.5. If the Pb/Ti ratio is 1.0× 10⁻³ to 2.0, the solution exhibits superior effects of the present invention, especially superior bridging defect suppression performance.

本發明人等等發現了,Pb奈米粒子及Ti奈米粒子在例如與將藥液塗佈於晶圓上時等容易締合而對光阻膜進行顯影時容易成為缺陷的原因(尤其橋接缺陷的原因)。 The inventors have discovered that Pb nanoparticles and Ti nanoparticles are prone to bonding when applied to a wafer, for example, and are easily developed into defects (especially bridging defects) during photoresist film development.

若Pb/Ti為1.0×10-3~2.0,則出乎意料地更容易抑制缺陷的產生。另外,本說明書中,關於Pb/Ti及後述之A/(B+C),以有效數字成為兩位數之方 式四捨五入而求出。 If Pb/Ti is 1.0 × 10⁻³ ~ 2.0, it is surprisingly easier to suppress the generation of defects. In addition, in this specification, Pb/Ti and A/(B+C) mentioned later are rounded to two significant digits.

金屬奈米粒子含有金屬原子即可,其形態並無特別限制。例如可舉出金屬原子的單體、含有金屬原子之化合物(以下亦稱為“金屬化合物”。)以及該等的複合體等。又,金屬奈米粒子可以含有複數個金屬原子。另外,金屬奈米粒子含有複數個金屬之情況下,將上述複數個金屬中含量(atm%)最多的金屬原子作為主成分。因此,稱為Pb奈米粒子時,在含有複數個金屬之情況下,複數個金屬中Pb原子為主成分。 Metal nanoparticles can contain metal atoms, and their morphology is not particularly limited. Examples include monomers of metal atoms, compounds containing metal atoms (hereinafter also referred to as "metal compounds"), and composites of these. Furthermore, metal nanoparticles can contain a plurality of metal atoms. In the case of metal nanoparticles containing a plurality of metals, the metal atom with the highest abundance (atm%) among these plurality of metals is taken as the principal component. Therefore, when called Pb nanoparticles, in the case of containing a plurality of metals, Pb atoms are the principal component among the plurality of metals.

作為複合體並無特別限制,但是可舉出具有金屬原子的單體及覆蓋上述金屬原子的單體的至少一部分之金屬化合物之所謂核-殼型粒子、包含金屬原子及其他原子之固溶體粒子、包含金屬原子及其他原子之共晶體粒子、金屬原子的單體與金屬化合物的聚集體粒子、種類不同之金屬化合物的聚集體粒子及從粒子表面朝向中心其組成連續或間斷地發生變化之金屬化合物等。 There are no particular limitations on what constitutes a composite, but examples include so-called core-shell particles of monomers containing metal atoms and metal compounds covering at least a portion of the aforementioned monomers of metal atoms; solid solution particles containing metal atoms and other atoms; eutectic particles containing metal atoms and other atoms; aggregate particles of monomers of metal atoms and metal compounds; aggregate particles of different types of metal compounds; and metal compounds whose composition changes continuously or intermittently from the particle surface toward the center.

作為除了金屬化合物所含有之金屬原子以外的原子並無特別限制,但是例如可舉出碳原子、氧原子、氮原子、氫原子、硫原子及磷原子等,其中,氧原子為較佳。作為金屬化合物含有氧原子之形態並無特別限制,但是金屬原子的氧化物為更佳。 There are no particular restrictions on the atoms other than the metal atoms contained in the metallic compound, but examples include carbon, oxygen, nitrogen, hydrogen, sulfur, and phosphorus atoms, with oxygen atoms being preferred. There are no particular restrictions on the form in which the oxygen atom is contained in the metallic compound, but oxides of the metal atom are preferred.

從得到具有更優異之本發明的效果之藥液之觀點考慮,作為金屬奈米粒子,包括選自包括由金屬原子的單體構成之粒子(粒子A)、由金屬原子的氧化物構成之粒子(粒子B)以及由金屬原子的單體及金屬原子的氧化物構成之粒子(粒子C)之群組中之至少1種為較佳。 From the viewpoint of obtaining a medicinal solution with superior effects of the present invention, the metal nanoparticles are preferably selected from at least one of the following groups: particles composed of monomers of metal atoms (particle A), particles composed of oxides of metal atoms (particle B), and particles composed of monomers of metal atoms and oxides of metal atoms (particle C).

另外,作為每單位體積的藥液中金屬奈米粒子的含粒子的數量中的粒 子A的含粒子的數量、粒子B的含粒子的數量及粒子C的含粒子的數量的關係並無特別限制,但是從得到具有更優異之本發明的效果之藥液之觀點考慮,粒子A的含粒子的數量與粒子B的含粒子的數量和粒子C的含粒子的數量的合計含粒子的數量之比(以下,亦稱為“A/(B+C)”。)為1.5以下為較佳,小於1.0為更佳,2.0×10-1以下為進一步較佳,1.0×10-1以下為特佳,1.0×10-3以上為較佳,1.0×10-2以上為更佳。 Furthermore, there are no particular limitations on the relationship between the number of particles A, B, and C in the number of metal nanoparticles per unit volume of the drug solution. However, from the viewpoint of obtaining a drug solution with superior effects of the present invention, it is preferable that the ratio of the number of particles A to the total number of particles B and C (hereinafter also referred to as "A/(B+C)") is 1.5 or less, less than 1.0 is more preferable, less than 2.0 × 10⁻¹ is further preferable, less than 1.0 × 10⁻¹ is particularly preferable, more than 1.0 × 10⁻³ is preferable, and more than 1.0 × 10⁻² is more preferable.

若A/(B+C)小於1.0,則藥液具有更優異之橋接缺陷抑制性能、更優異之圖案寬度的均勻性能及色斑缺陷抑制性能。另外,色斑缺陷係指未檢測到金屬原子之缺陷。 If A/(B+C) is less than 1.0, the solution exhibits superior bridging defect suppression performance, superior pattern width uniformity, and superior stain defect suppression performance. Furthermore, stain defects refer to defects where no metal atoms were detected.

又,若A/(B+C)為0.1以下,則藥液具有更優異之缺陷抑制性能。 Furthermore, if A/(B+C) is less than 0.1, the drug solution exhibits superior defect inhibition performance.

<特定有機化合物A> <Specific organic compound A>

藥液含有特定有機化合物A。特定有機化合物A如上述為藥液中的ClogP值高於溶劑的ClogP值的有機化合物。 The drug solution contains a specific organic compound A. As mentioned above, specific organic compound A is an organic compound in the drug solution whose ClogP value is higher than that of the solvent.

特定有機化合物A可以添加到藥液中,亦可以在藥液的製造步驟中無意間混入藥液中。作為在藥液的製造步驟中無意間被混合之情況,例如可舉出在製造藥液時所使用之原料(例如,有機溶劑)中含有特定有機化合物A之情況及在藥液的製造步驟中混合(例如,污染)水之情況等,但是並不限制於上述。 A specific organic compound A may be added to the drug solution, or it may be unintentionally mixed into the drug solution during the manufacturing process. Examples of unintentional mixing during the manufacturing process include the presence of specific organic compound A in the raw materials used in the manufacturing process (e.g., organic solvents), and the mixing (e.g., contamination) of water during the manufacturing process, but are not limited to the above.

特定有機化合物A的ClogP值高於藥液中的溶劑的ClogP值。從更發揮本發明的效果之方面而言,特定有機化合物A的ClogP值與藥液中的溶劑的ClogP值之差〔(特定有機化合物A的ClogP值)-(藥液中的溶劑的ClogP值)〕為3~9為較佳,3~8為較佳,4~7為更佳。 The ClogP value of a specific organic compound A is higher than the ClogP value of the solvent in the drug solution. From the perspective of further enhancing the effectiveness of this invention, the difference between the ClogP value of the specific organic compound A and the ClogP value of the solvent in the drug solution [(ClogP value of specific organic compound A) - (ClogP value of solvent in drug solution)] is preferably 3-9, 3-8 is preferred, and 4-7 is even better.

只要特定有機化合物A的ClogP值高於藥液中的溶劑的ClogP值,則並無特別限定,但是從更發揮本發明的效果之方面而言,6以上為較佳,6~10為特佳。 There are no particular limitations as long as the ClogP value of a specific organic compound A is higher than the ClogP value of the solvent in the drug solution. However, from the perspective of maximizing the effectiveness of this invention, a value of 6 or higher is preferred, and 6 to 10 is particularly preferred.

其中,ClogP值係指藉由計算求出對1-辛醇和水的分配係數P的常用對數logP而得之值。關於用於ClogP值的計算之方法及軟體,能夠使用公知者,但是只要無特別說明,則在本發明中使用編入到Cambridge soft公司的ChemBioDraw Ultra 12.0中的ClogP程式。 The ClogP value refers to the value obtained by calculating the common logarithm logP of the partition coefficient P of 1-octanol and water. While known methods and software can be used for calculating the ClogP value, this invention uses the ClogP program incorporated into Cambridge Soft's ChemBioDraw Ultra 12.0 unless otherwise specified.

例如,鄰苯二甲酸二丁酯的ClogP值為4.72,鄰苯二甲酸二辛酯(DOP)的ClogP值為8.71,鄰苯二甲酸二異壬酯(DINP)的ClogP值為9.03。 For example, dibutyl phthalate has a ClogP value of 4.72, dioctyl phthalate (DOP) has a ClogP value of 8.71, and diisononyl phthalate (DINP) has a ClogP value of 9.03.

作為特定有機化合物A的碳數並無特別限制,但是從藥液具有更優異之本發明的效果之方面考慮,8以上為較佳,12以上為更佳。另外,作為碳數的上限並無特別限制,但是通常30以下為較佳。 There is no particular limitation on the number of carbons in the specific organic compound A. However, considering the superior efficacy of the invention, 8 or more carbons are preferred, and 12 or more are even better. Furthermore, there is no particular upper limit on the number of carbons, but generally, 30 or less is preferred.

作為特定有機化合物A,例如可以為伴隨有機溶劑的合成而產生之副產物和/或未反應的原料(以下,亦稱為“副產物等”。)等。 As a specific organic compound A, it may be a byproduct and/or unreacted starting material generated during the synthesis of an organic solvent (hereinafter also referred to as "byproducts, etc.").

作為上述副產物等,例如可舉出由下述式I~V表示之化合物等。 Examples of the aforementioned byproducts include compounds represented by formulas I to V.

式I中,R1及R2分別獨立地表示烷基或環烷基或彼此鍵結而形成環。 In Formula I, R1 and R2 independently represent alkyl or cycloalkyl groups or rings formed by bonding with each other.

作為由R1及R2表示之烷基或環烷基,碳數1~12的烷基或碳數 6~12的環烷基為較佳,碳數1~8的烷基或碳數6~8的環烷基為更佳。 As for the alkyl or cycloalkyl groups represented by R1 and R2 , alkyl groups having 1 to 12 carbon atoms or cycloalkyl groups having 6 to 12 carbon atoms are preferred, and alkyl groups having 1 to 8 carbon atoms or cycloalkyl groups having 6 to 8 carbon atoms are even more preferred.

R1及R2彼此鍵結而形成之環為內酯環,4~9員環的內酯環為較佳,4~6員環的內酯環為更佳。 The ring formed by the bonding of R1 and R2 is a lactone ring. A lactone ring with 4 to 9 members is preferred, and a lactone ring with 4 to 6 members is even better.

另外,R1及R2滿足由式I表示之化合物的碳數成為8以上之關係為較佳。 In addition, it is preferable that R1 and R2 satisfy the relationship that the number of carbon atoms in the compound represented by Formula I is 8 or more.

式II中,R3及R4分別獨立地表示氫原子、烷基、烯基、環烷基或環烯基或彼此鍵結而形成環。但是,R3及R4該雙方不會均為氫原子。 In Formula II, R3 and R4 independently represent hydrogen atoms, alkyl groups, alkenyl groups, cycloalkyl groups, or cycloalkenyl groups, or are bonded together to form a ring. However, R3 and R4 are not both hydrogen atoms.

作為由R3及R4表示之烷基,例如碳數1~12的烷基為較佳,碳數1~8的烷基為更佳。 Alkyl groups represented by R3 and R4 are preferred, for example, alkyl groups having 1 to 12 carbon atoms are preferred, and alkyl groups having 1 to 8 carbon atoms are even more preferred.

作為由R3及R4表示之烯基,例如碳數2~12的烯基為較佳,碳數2~8的烯基為更佳。 Alkenes represented by R3 and R4 are preferred, for example, alkenes with 2 to 12 carbons are preferred, and alkenes with 2 to 8 carbons are even more preferred.

作為由R3及R4表示之環烷基,碳數6~12的環烷基為較佳,碳數6~8的環烷基為更佳。 As cycloalkyl groups represented by R3 and R4 , cycloalkyl groups with 6 to 12 carbon atoms are preferred, and cycloalkyl groups with 6 to 8 carbon atoms are even more preferred.

作為由R3及R4表示之環烯基,例如碳數3~12的環烯基為較佳,碳數6~8的環烯基為更佳。 Cycloalkenyl groups represented by R3 and R4 are preferred, for example, cycloalkenyl groups with 3 to 12 carbon atoms are preferred, and cycloalkenyl groups with 6 to 8 carbon atoms are even more preferred.

R3及R4彼此鍵結而形成之環為環狀酮結構,可以為飽和環狀酮,亦可以為不飽和環狀酮。該環狀酮為6~10員環為較佳,6~8員環為更佳。 The ring formed by the bonding of R3 and R4 is a cyclic ketone structure, which can be a saturated cyclic ketone or an unsaturated cyclic ketone. It is preferred that the cyclic ketone has 6 to 10 members, and even more preferred that it has 6 to 8 members.

另外,R3及R4滿足由式II表示之化合物的碳數成為8以上之關係為較佳。 In addition, it is preferable that R3 and R4 satisfy the relationship that the number of carbon atoms in the compound represented by Formula II is 8 or more.

式III中,R5表示烷基或環烷基。 In Formula III, R5 represents alkyl or cycloalkyl.

由R5表示之烷基為碳數6以上的烷基為較佳,碳數6~12的烷基為更佳,碳數6~10的烷基為特佳。 The alkyl group represented by R 5 is preferably an alkyl group with 6 or more carbon atoms, more preferably an alkyl group with 6 to 12 carbon atoms, and especially preferably an alkyl group with 6 to 10 carbon atoms.

上述烷基可以在鏈中具有醚鍵,亦可以具有羥基等取代基。 The aforementioned alkyl groups may have ether bonds in the chain, or they may have substituents such as hydroxyl groups.

由R5表示之環烷基為碳數6以上的環烷基為較佳,碳數6~12的環烷基為更佳,碳數6~10的環烷基為特佳。 The cycloalkyl group represented by R 5 is preferably a cycloalkyl group with 6 or more carbon atoms, more preferably a cycloalkyl group with 6 to 12 carbon atoms, and especially preferably a cycloalkyl group with 6 to 10 carbon atoms.

式IV中,R6及R7分別獨立地表示烷基或環烷基或彼此鍵結而形成環。 In Formula IV, R6 and R7 independently represent alkyl or cycloalkyl groups or rings formed by bonding with each other.

作為由R6及R7表示之烷基,碳數1~12的烷基為較佳,碳數1~8的烷基為更佳。 As for alkyl groups represented by R6 and R7 , alkyl groups with 1 to 12 carbon atoms are preferred, and alkyl groups with 1 to 8 carbon atoms are even more preferred.

作為由R6及R7表示之環烷基,碳數6~12的環烷基為較佳,碳數6~8的環烷基為更佳。 As cycloalkyl groups represented by R6 and R7 , cycloalkyl groups with 6 to 12 carbon atoms are preferred, and cycloalkyl groups with 6 to 8 carbon atoms are even more preferred.

R6及R7彼此鍵結而形成之環為環狀醚結構。該環狀醚結構為4~8員環為較佳,5~7員環為更佳。 The ring formed by the bonding of R6 and R7 is a cyclic ether structure. The cyclic ether structure is preferably 4 to 8 members, and even more preferably 5 to 7 members.

另外,R6及R7滿足由式IV表示之化合物的碳數成為8以上之關係為較佳。 In addition, it is preferable that R6 and R7 satisfy the relationship that the compound represented by Formula IV has 8 or more carbon atoms.

式V中,R8及R9分別獨立地表示烷基或環烷基或彼此鍵結而形成環。L表示單鍵或伸烷基。 In formula V, R8 and R9 independently represent alkyl or cycloalkyl groups or rings formed by bonding with each other. L represents a single bond or an extended alkyl group.

作為由R8及R9表示之烷基,例如碳數6~12的烷基為較佳,碳數6~10的烷基為更佳。 Alkyl groups represented by R8 and R9 are preferred, for example, alkyl groups with 6 to 12 carbon atoms are preferred, and alkyl groups with 6 to 10 carbon atoms are even more preferred.

作為由R8及R9表示之環烷基,碳數6~12的環烷基為較佳,碳數6~10的環烷基為更佳。 As for cycloalkyl groups represented by R8 and R9 , cycloalkyl groups with 6 to 12 carbon atoms are preferred, and cycloalkyl groups with 6 to 10 carbon atoms are even more preferred.

R8及R9彼此鍵結而形成之環為環狀二酮結構。該環狀二酮結構為6~12員環為較佳,6~10員環為更佳。 The ring formed by the bonding of R8 and R9 is a cyclic diketone structure. The cyclic diketone structure with 6 to 12 members is preferred, and with 6 to 10 members is even more preferred.

作為由L表示之伸烷基,例如碳數1~12的伸烷基為較佳,碳數 1~10的伸烷基為更佳。 As for the alkyl group represented by L, alkyl groups with 1 to 12 carbon atoms are preferred, and alkyl groups with 1 to 10 carbon atoms are even more preferred.

另外,R8、R9及L滿足由式V表示之化合物的碳數成為8以上之關係。 In addition, R8 , R9 and L satisfy the relationship that the number of carbon atoms in the compound represented by formula V is 8 or more.

無特別限制,但是有機溶劑為醯胺化合物、醯亞胺化合物及亞碸化合物之情況下,可舉出一形態中碳數為6以上的醯胺化合物、醯亞胺化合物及亞碸化合物。又,作為特定有機化合物A,例如亦可舉出下述化合物。 There are no particular restrictions, but when the organic solvent is a amide compound, amide compound, or monoxide compound, examples can be given of amide compounds, amide compounds, and monoxide compounds having 6 or more carbon atoms in their form. Furthermore, as a specific organic compound A, the following compounds can also be given as examples.

又,作為特定有機化合物A,亦可舉出二丁基羥基甲苯(BHT)、硫代二丙酸二硬脂醇酯(DSTP)、4,4’-伸丁基雙-(6-第三丁基-3-甲基苯酚)、2,2’-亞甲基雙-(4-乙基-6-第三丁基苯酚)及日本特開2015-200775號公報中所記載之抗氧化劑等抗氧化劑;未反應的原料;製造有機溶劑時所產生之結構異構物及副產物;來自構成有機溶劑的製造裝置之構件等的溶出物(例如,從O型環等橡膠構件溶出之塑化劑);等。 Furthermore, examples of specific organic compounds A include dibutylhydroxytoluene (BHT), distearate (DSTP), 4,4'-endylenyl bis-(6-tert-butyl-3-methylphenol), 2,2'-methylene bis-(4-ethyl-6-tert-butylphenol), and antioxidants as described in Japanese Patent Application Publication No. 2015-200775; unreacted raw materials; structural isomers and byproducts generated during the manufacture of organic solvents; leachates from components of the apparatus constituting the organic solvent (e.g., plasticizers leached from rubber components such as O-rings); etc.

又,作為特定有機化合物A,亦可舉出鄰苯二甲酸二辛酯(DOP)、鄰苯二甲酸雙(2-乙基己酯)(DEHP)、鄰苯二甲酸雙(2-丙基庚酯)(DPHP)、 鄰苯二甲酸二丁酯(DBP)、鄰苯二甲酸苄基丁酯(BBzP)、鄰苯二甲酸二異癸酯(DIDP)、鄰苯二甲酸二異辛酯(DIOP)、鄰苯二甲酸二乙酯(DEP)、鄰苯二甲酸二異丁酯(DIBP)、鄰苯二甲酸二己酯及鄰苯二甲酸二異壬酯(DINP)等鄰苯二甲酸酯、偏苯三酸三(2-乙基己酯)(TEHTM)、偏苯三酸三(正辛基-正癸酯)(ATM)、己二酸雙(2-乙基己酯)(DEHA)、己二酸單甲酯(MMAD)、己二酸二辛酯(DOA)、癸二酸二丁酯(DBS)、順丁烯二酸二丁酯(DBM)、順丁烯二酸二異丁酯(DIBM)、壬二酸酯、苯甲酸酯、對苯二甲酸乙二酯(例:二辛基對苯二甲酸乙二酯(DEHT))、1,2-環己烷二羧酸二異壬酯(DINCH)、環氧化植物油、磺醯胺(例:N-(2-羥基丙基)苯磺醯胺(HP BSA)、N-(正丁基)苯磺醯胺(BBSA-NBBS))、有機磷酸酯(例:磷酸三甲苯酯(TCP)、磷酸三丁酯(TBP))、乙醯化甘油單酯、檸檬酸三乙酯(TEC)、乙醯基檸檬酸三乙酯(ATEC)、檸檬酸三丁酯(TBC)、乙醯基檸檬酸三丁酯(ATBC)、檸檬酸三辛酯(TOC)、乙醯基檸檬酸三辛酯(ATOC)、檸檬酸三己烷(THC)、乙醯基檸檬酸三己烷(ATHC)環氧化大豆油、亞乙基伸丙基橡膠、聚丁烯、5-亞乙基-2-降莰冰片烯的加成聚合物及以下所例示之高分子塑化劑。 Furthermore, as specific organic compounds A, examples include dioctyl phthalate (DOP), bis(2-ethylhexyl) phthalate (DEHP), bis(2-propylheptaethyl) phthalate (DPHP), dibutyl phthalate (DBP), benzyl butyl phthalate (BBzP), diisodecyl phthalate (DIDP), diisooctyl phthalate (DIOP), diethyl phthalate (DEP), diisobutyl phthalate (DIBP), dihexyl phthalate, and diisononyl phthalate (DINP), as well as tri(2-ethyl) trimellitate. Hexyl ester (TEHTM), tri(n-octyl-n-decyl) trimellitate (ATM), bis(2-ethylhexyl) adipate (DEHA), monomethyl adipate (MMAD), dioctyl adipate (DOA), dibutyl sebacate (DBS), dibutyl bis(butenedioic acid) (DBM), diisobutyl bis(butenedioic acid) (DIBM), azelaate, benzoate, ethylene terephthalate (e.g., dioctyl terephthalate (DEHT)), diisononyl 1,2-cyclohexanedicarboxylate (DINCH), epoxidized vegetable oils, sulfonamides (e.g., N-(2-hydroxypropyl)benzenesulfonamide (HP)). BSA), N-(n-butylbenzenesulfonamide) (BBSA-NBBS), organophosphates (e.g., tricresyl phosphate (TCP), tributyl phosphate (TBP)), acetylated glycerol monoesters, triethyl citrate (TEC), triethyl acetylated citrate (ATEC), tributyl citrate (TBC), tributyl acetylated citrate (ATBC), trioctyl citrate (TOC), trioctyl acetylated citrate (ATOC), trihexane citrate (THC), trihexane citrate (ATHC), epoxidized soybean oil, ethylenepropyl rubber, polybutene, addition polymers of 5-ethylene-2-norbornene, and the following polymeric plasticizers.

推斷為該等特定有機化合物A從純化步驟中所接觸之過濾器、配管、罐、O型環及容器等混入到被純化物或藥液中。尤其,除了烷基烯烴以外的化合物與橋接缺陷的產生有關。 It is presumed that specific organic compounds A were introduced into the purified substance or solution through filters, piping, tanks, O-rings, and containers encountered during the purification process. In particular, compounds other than alkylene compounds are associated with the generation of bridging defects.

上述化合物之中,藉由特定有機化合物A通常在藥液的製造環境下存在且容易藉由製造步驟及製造方法來調整含量之理由,鄰苯二甲酸酯為較佳,選自包括鄰苯二甲酸二辛酯(DOP)及鄰苯二甲酸二異壬酯(DINP)之群組中之至少1種為較佳。 Among the aforementioned compounds, phthalates are preferred because specific organic compound A is typically present in the pharmaceutical solution manufacturing environment and its content can be easily adjusted through manufacturing steps and methods. It is particularly preferred that at least one compound be selected from the group consisting of dioctyl phthalate (DOP) and diisononyl phthalate (DINP).

只要特定有機化合物A的含量和存在於空隙部之氣體中所包含之有機化合物(後述的有機化合物B)的含量的合計在後述範圍內,則並無特別限定,但是從缺陷抑制性能更優異之方面考慮,相對於藥液的總質量為100,000質量ppt以下為較佳,0.1~1,000質量ppt為更佳,0.1~10質量ppt為特佳。 There are no particular limitations as long as the total content of specific organic compound A and the content of organic compounds (organic compound B, described later) contained in the gas present in the pores are within the range described later. However, considering superior defect suppression performance, a total mass of less than 100,000 ppt of the solution is preferred, 0.1 to 1,000 ppt is more preferred, and 0.1 to 10 ppt is particularly preferred.

關於藥液中的特定有機化合物A的含量及種類,能夠使用、GCMS(氣相層析質譜分析裝置;gas chromatography mass spectrometry)來測量。 The content and type of a specific organic compound A in the drug solution can be measured using GCMS (gas chromatography-mass spectrometry).

<其他成分> Other ingredients

藥液可以含有除了上述以外的其他成分。作為其他成分,例如可舉出除了特定有機化合物A以外的有機化合物及樹脂等。 The solution may contain other ingredients besides those mentioned above. Examples of other ingredients include organic compounds other than specific organic compound A, and resins, etc.

(除了特定有機化合物A以外的有機化合物) (Organic compounds other than specific organic compound A)

藥液可以含有除了特定有機化合物A以外的有機化合物(以下,亦稱為“其他有機化合物”。)。其他有機化合物為其ClogP值為藥液中的溶劑的ClogP值以下的有機化合物。 The solution may contain organic compounds other than specific organic compound A (hereinafter also referred to as "other organic compounds"). Other organic compounds are organic compounds whose ClogP value is lower than the ClogP value of the solvent in the solution.

其他有機化合物可以添加到藥液中,亦可以無意間被混合到藥液的製造步驟中。作為在藥液的製造步驟中無意間被混合之情況,例如可舉出在製造藥液時所使用之原料(例如,有機溶劑)中含有其他特定有機化合物之情況及在藥液的製造步驟中混合(例如,污染)水之情況等,但是並不限制於 上述。 Other organic compounds may be added to the drug solution, or they may be unintentionally mixed into the drug solution manufacturing process. Examples of unintentional mixing during the drug solution manufacturing process include the presence of other specific organic compounds in the raw materials used in the manufacturing process (e.g., organic solvents), and the mixing (e.g., contamination) of water during the drug solution manufacturing process, but are not limited to the above.

(樹脂) (resin)

藥液可以含有樹脂。作為樹脂,具有藉由酸的作用進行分解而產生極性基之基團之樹脂P為更佳。作為上述樹脂,藉由酸的作用而對以有機溶劑為主成分之顯影液之溶解性減少之樹脂、亦即具有由後述之式(AI)表示之重複單元之樹脂為更佳。具有由後述之式(AI)表示之重複單元之樹脂具有藉由酸的作用進行分解而產生鹼可溶性基之基團(以下,亦稱為“酸分解性基”)。 The solution may contain resin. Resin P, having groups that decompose under acidic conditions to produce polar groups, is preferred. Of the aforementioned resins, those that reduce the solubility of developing solutions primarily composed of organic solvents under acidic conditions, i.e., resins having repeating units represented by the formula (AI) described later, are preferred. Resins having repeating units represented by the formula (AI) described later have groups that decompose under acidic conditions to produce alkaline-soluble groups (hereinafter also referred to as "acid-decomposing groups").

作為極性基,可舉出鹼可溶性基。作為鹼可溶性基,例如可舉出羧基、氟化醇基(較佳為六氟異丙醇基)、酚性羥基及磺基。 Examples of polar groups include alkali-soluble groups. Examples of alkali-soluble groups include carboxyl groups, fluorinated alcohol groups (preferably hexafluoroisopropanol groups), phenolic hydroxyl groups, and sulfonyl groups.

在酸分解性基中,極性基被在酸的作用下脫離之基團(酸脫離性基)保護。作為酸脫離性基,例如可舉出-C(R36)(R37)(R38)、-C(R36)(R37)(OR39)及-C(R01)(R02)(OR39)等。 In acid-dissociative groups, the polar group is protected by a group that is released under the action of acid (acid-dissociative group). Examples of acid-dissociative groups include -C(R 36 )(R 37 )(R 38 ), -C(R 36 )(R 37 )(OR 39 ), and -C(R 01 )(R 02 )(OR 39 ).

式中,R36~R39分別獨立地表示烷基、環烷基、芳基、芳烷基或烯基。R36與R37可以相互鍵結而形成環。 In the formula, R 36 to R 39 independently represent alkyl, cycloalkyl, aryl, aralkyl, or alkenyl groups. R 36 and R 37 can bond together to form a ring.

R01及R02分別獨立地表示氫原子、烷基、環烷基、芳基、芳烷基或烯基。 R 01 and R 02 represent hydrogen atoms, alkyl, cycloalkyl, aryl, aralkyl or alkenyl groups, respectively.

以下,對藉由酸的作用而對以有機溶劑為主成分之顯影液之溶解性減少之樹脂P進行詳述。 The following section details resin P, which reduces the solubility of developer solutions primarily composed of organic solvents through the action of acids.

((式(AI):具有酸分解性基之重複單元)) ((Equation (AI): A repeating unit with an acid-decomposing group))

樹脂P含有由式(AI)表示之重複單元為較佳。 Resin P containing repeating units represented by formula (AI) is preferred.

[化學式5] [Chemical Formula 5]

式(AI)中,Xa1表示氫原子或可以具有取代基之烷基。 In formula (AI), Xa 1 represents a hydrogen atom or an alkyl group that may have substituents.

T表示單鍵或2價的連接基。 T represents a single-bond or divalent linker.

Ra1~Ra3分別獨立地表示烷基(直鏈狀或支鏈狀)或環烷基(單環或多環)。 Ra 1 to Ra 3 represent alkyl (straight-chain or branched) or cycloalkyl (monocyclic or polycyclic) independently.

Ra1~Ra3中的2個可以鍵結而形成環烷基(單環或多環)。 Two of Ra 1 to Ra 3 can bond together to form a cycloalkyl group (monocyclic or polycyclic).

作為由Xa1表示之可以具有取代基之烷基,例如可舉出甲基及由-CH2-R11表示之基團。R11表示鹵素原子(氟原子等)、羥基或1價的有機基團。 As an alkyl group represented by Xa 1, which can have substituents, examples include methyl and groups represented by -CH 2 -R 11. R 11 represents a halogen atom (fluorine atom, etc.), a hydroxyl group, or a monovalent organic group.

Xa1為氫原子、甲基、三氟甲基或羥甲基為較佳。 Xa 1 is preferably a hydrogen atom, methyl, trifluoromethyl or hydroxymethyl.

作為T的2價的連結基,可舉出伸烷基、-COO-Rt-基及-O-Rt-基等。式中,Rt表示伸烷基或環伸烷基。 Examples of divalent linking groups to T include alkylene groups, -COO-Rt- groups, and -O-Rt- groups. In these formulas, Rt represents an alkylene group or a cycloalkylene group.

T為單鍵或-COO-Rt-基為較佳。Rt為碳數1~5的伸烷基為較佳,-CH2-基、-(CH2)2-基或-(CH2)3-基為更佳。 T is preferably a single bond or a -COO-Rt- group. Rt is preferably an alkyl group with 1 to 5 carbon atoms, and -CH2- , -( CH2 ) 2- , or -( CH2 ) 3- are even better.

作為Ra1~Ra3的烷基,碳數1~4為較佳。 For alkyl groups of Ra 1 to Ra 3 , 1 to 4 carbon atoms are preferred.

作為Ra1~Ra3的環烷基,環戊基或環己基等單環的環烷基或降莰基、四環癸基、四環十二烷基或金剛烷基等多環的環烷基為較佳。 As cycloalkyl groups of Ra 1 to Ra 3 , monocyclic cycloalkyl groups such as cyclopentyl or cyclohexyl, or polycyclic cycloalkyl groups such as norcenyl, tetracyclodecyl, tetracyclododecyl, or adamantyl are preferred.

作為鍵結2個Ra1~Ra3而形成之環烷基,環戊基或環己基等單環的環烷基或降莰基、四環癸基、四環十二烷基或金剛烷基等多環的環烷基為較佳。碳數5~6的單環的環烷基為更佳。 As a cycloalkyl group formed by bonding two Ra 1 to Ra 3 atoms, monocyclic cycloalkyl groups such as cyclopentyl or cyclohexyl, or polycyclic cycloalkyl groups such as norcenyl, tetracyclodecyl, tetracyclododecyl, or adamantyl are preferred. Monocyclic cycloalkyl groups with 5 to 6 carbon atoms are even more preferred.

鍵結2個Ra1~Ra3而形成之上述環烷基中,例如構成環之亞甲基中的1個可以被具有氧原子等雜原子或羰基等雜原子之基團取代。 In the above-mentioned cycloalkyl groups formed by bonding two Ra 1 to Ra 3 , for example, one of the methylene groups constituting the ring can be replaced by a group having heteroatoms such as an oxygen atom or a carbonyl group.

由式(AI)表示之重複單元中,例如Ra1為甲基或乙基且Ra2與Ra3鍵結而形成上述環烷基之樣態為較佳。 In the repeating unit represented by formula (AI), it is preferable that Ra 1 is methyl or ethyl and Ra 2 and Ra 3 are bonded to form the above-mentioned cycloalkyl group.

上述各基可以具有取代基,作為取代基,例如可舉出烷基(碳數1~4)、鹵素原子、羥基、烷氧基(碳數1~4)、羧基及烷氧羰基(碳數2~6)等,碳數8以下為較佳。 The aforementioned groups may have substituents. Examples of substituents include alkyl groups (1-4 carbon atoms), halogen atoms, hydroxyl groups, alkoxy groups (1-4 carbon atoms), carboxyl groups, and alkoxycarbonyl groups (2-6 carbon atoms), with 8 or fewer carbon atoms being preferred.

由式(AI)表示之重複單元的含量相對於樹脂P中的總重複單元為20~90莫耳%為較佳,25~85莫耳%為更佳,30~80莫耳%為特佳。 The content of repeating units, expressed by formula (AI), relative to the total repeating units in resin P is preferably 20-90 mol%, more preferably 25-85 mol%, and particularly preferably 30-80 mol%.

((具有內酯結構之重複單元)) ((Repeating units with lactone structures))

又,樹脂P含有具有內酯結構之重複單元Q為較佳。 Furthermore, resin P containing a repeating unit Q with a lactone structure is preferred.

具有內酯結構之重複單元Q在側鏈具有內酯結構為較佳,來自於(甲基)丙烯酸衍生物單體之重複單元為更佳。 The repeating unit Q, having a lactone structure, is preferably derived from a (meth)acrylic acid derivative monomer, and even more preferably.

具有內酯結構之重複單元Q可以單獨使用1種,亦可以併用2種以上,但是單獨使用1種為較佳。 The repeating unit Q with a lactone structure can be used alone or in combination with two or more types, but using one type alone is preferred.

具有內酯結構之重複單元Q的含量相對於樹脂P中的總重複單元為3~80莫耳%為較佳,3~60莫耳%為更佳。 The content of repeating units Q with lactone structures relative to the total repeating units in resin P is preferably 3-80 mol%, and more preferably 3-60 mol%.

作為內酯結構,5~7員環的內酯結構為較佳,以與5~7員環的內酯結構形成雙環結構或螺結構之形式與其他環結構縮環之結構為更佳。 As a lactone structure, a 5-7 membered lactone structure is preferred, and structures that form bicyclic or spirocyclic structures with other ring structures are even more preferred.

作為內酯結構,含有具有由下述式(LC1-1)~(LC1-17)中的任一個表示之內酯結構之重複單元為較佳。作為內酯結構,由式(LC1-1)、式(LC1-4)、式(LC1-5)或式(LC1-8)表示之內酯結構為較佳,由式(LC1-4)表示之內酯結構為更佳。 As a lactone structure, it is preferable to contain a repeating unit having any one of the lactone structures represented by formulas (LC1-1) to (LC1-17). As a lactone structure, a lactone structure represented by formula (LC1-1), formula (LC1-4), formula (LC1-5), or formula (LC1-8) is preferred, and a lactone structure represented by formula (LC1-4) is even more preferred.

內酯結構部分可以具有取代基(Rb2)。作為較佳的取代基(Rb2),可舉出碳數1~8的烷基、碳數4~7的環烷基、碳數1~8的烷氧基、碳數2~8的烷氧羰基、羧基、鹵素原子、羥基、氰基及酸分解性基等。n2表示0~4的整數。n2為2以上時,存在複數個之取代基(Rb2)可以相同亦可以不同,又,存在複數個之取代基(Rb2)可以彼此鍵結而形成環。 The lactone structure may have substituents (Rb 2 ). Preferred substituents (Rb 2 ) include alkyl groups with 1-8 carbon atoms, cycloalkyl groups with 4-7 carbon atoms, alkoxy groups with 1-8 carbon atoms, alkoxycarbonyl groups with 2-8 carbon atoms, carboxyl groups, halogen atoms, hydroxyl groups, cyano groups, and acid-degradable groups. n 2 represents an integer from 0 to 4. When n 2 is 2 or more, a plurality of substituents (Rb 2 ) may be the same or different, and a plurality of substituents (Rb 2 ) may bond together to form a ring.

((具有酚性羥基之重複單元)) ((a repeating unit containing a phenolic hydroxyl group))

又,樹脂P可以含有具有酚性羥基之重複單元。 Furthermore, resin P can contain repeating units with phenolic hydroxyl groups.

作為具有酚性羥基之重複單元,例如可舉出由下述通式(I)表示之重複單元。 As a repeating unit containing a phenolic hydroxyl group, an example of a repeating unit represented by the following general formula (I) can be cited.

式中,R41、R42及R43分別獨立地表示氫原子、烷基、鹵素原子、氰基或烷氧羰基。但是,R42與Ar4可以鍵結而形成環,該情況下的R42表示單鍵或伸烷基。 In the formula, R 41 , R 42 , and R 43 independently represent a hydrogen atom, an alkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group. However, R 42 can bond with Ar 4 to form a ring, in which case R 42 represents a single bond or an extended alkyl group.

X4表示單鍵、-COO-或-CONR64-,R64表示氫原子或烷基。 X 4 indicates a single bond, -COO- or -CONR 64- , and R 64 indicates a hydrogen atom or alkyl group.

L4表示單鍵或伸烷基。 L4 indicates a single bond or an alkyl group.

Ar4表示(n+1)價的芳香環基,與R42鍵結而形成環之情況下,表示(n+2)價的芳香環基。 Ar 4 represents an aromatic cyclic group with an (n+1) valence. When it is bonded to R 42 to form a ring, it represents an aromatic cyclic group with an (n+2) valence.

n表示1~5的整數。 n represents an integer from 1 to 5.

作為通式(I)中的R41、R42及R43的烷基,可以具有取代基,甲基、乙基、丙基、異丙基、正丁基、第二丁基、己基、2-乙基己基、辛基及 十二烷基等碳數20以下的烷基為較佳,碳數8以下的烷基為更佳,碳數3以下的烷基為特佳。 The alkyl groups R 41 , R 42 and R 43 in general formula (I) may have substituents. Alkyl groups with 20 or fewer carbon atoms, such as methyl, ethyl, propyl, isopropyl, n-butyl, dibutyl, hexyl, 2-ethylhexyl, octyl and dodecyl, are preferred. Alkyl groups with 8 or fewer carbon atoms are even more preferred. Alkyl groups with 3 or fewer carbon atoms are particularly preferred.

作為通式(I)中的R41、R42及R43的環烷基,可以為單環型,亦可以為多環型。作為環烷基,可以具有取代基,環丙基、環戊基及環己基等碳數3~8且單環型環烷基為較佳。 The cycloalkyl groups R 41 , R 42 , and R 43 in general formula (I) can be monocyclic or polycyclic. As cycloalkyl groups, they can have substituents, and monocyclic cycloalkyl groups with 3 to 8 carbon atoms, such as cyclopropyl, cyclopentyl, and cyclohexyl, are preferred.

作為通式(I)中的R41、R42及R43的鹵素原子,可舉出氟原子、氯原子、溴原子及碘原子,氟原子為較佳。 As for the halogen atoms R 41 , R 42 and R 43 in general formula (I), fluorine, chlorine, bromine and iodine atoms can be mentioned, with fluorine atoms being preferred.

作為通式(I)中的R41、R42及R43的烷氧羰基中所包含之烷基,與上述R41、R42及R43中的烷基相同者為較佳。 The alkyl group contained in the alkoxycarbonyl group of R41 , R42 and R43 in general formula (I) is preferably the same as the alkyl group in R41 , R42 and R43 mentioned above.

作為上述各基團中的取代基,例如可舉出烷基、環烷基、芳基、胺基、醯胺基、脲基、胺基甲酸酯基、羥基、羧基、鹵素原子、烷氧基、硫醚基、醯基、醯氧基、烷氧羰基、氰基及硝基等,取代基的碳數為8以下為較佳。 Examples of substituents among the aforementioned groups include alkyl, cycloalkyl, aryl, amino, amide, urea, carbamate, hydroxyl, carboxyl, halogen, alkoxy, thioether, acetyl, acetoxy, alkoxycarbonyl, cyano, and nitro groups. It is preferable that the substituent has 8 or fewer carbon atoms.

Ar4表示(n+1)價的芳香環基。n為1之情況下的2價的芳香環基可以具有取代基,例如可舉出伸苯基、甲伸苯基、伸萘基及蒽基等碳數6~18的伸芳基以及噻吩、呋喃、吡咯、苯并噻吩、苯并呋喃、苯并吡咯、三、咪唑、苯并咪唑、三唑、噻二唑及噻唑等包含雜環之芳香環基。 Ar 4 represents an aromatic cyclic group with an (n+1) valence. A divalent aromatic cyclic group with n=1 can have substituents, such as arylyl groups with 6-18 carbon atoms (e.g., phenyl, methylaryl, naphthyl, and anthracene), as well as thiophene, furan, pyrrole, benzothiophene, benzofuran, benzopyrrole, and triphenyl ether. Aromatic cyclic groups containing heterocyclic compounds, such as imidazole, benzimidazole, triazole, thiadiazole, and thiazolium.

作為n為2以上的整數之情況下的(n+1)價的芳香環基的具體例,可舉出從2價的芳香環基的上述之具體例去除(n-1)個任一氫原子而成之基團。 As a specific example of an aromatic cycloalcoholic group with a valence of (n+1) when n is an integer greater than 2, a group formed by removing (n-1) any hydrogen atoms from the above-mentioned specific example of a divalent aromatic cycloalcoholic group can be given.

(n+1)價的芳香環基還可以具有取代基。 (n+1) valence aromatic cyclic groups can also have substituents.

作為能夠具有上述之烷基、環烷基、烷氧羰基、伸烷基及(n+1) 價的芳香環基之取代基,例如可舉出在通式(I)中的R41、R42及R43中舉出之烷基;甲氧基、乙氧基、羥基乙氧基、丙氧基、羥基丙氧基及丁氧基等烷氧基;苯基等芳基。 As substituents capable of having the above-mentioned alkyl, cycloalkyl, alkoxycarbonyl, alkylene, and (n+1) valence aromatic cyclic groups, examples include alkyl groups listed in R 41 , R 42 , and R 43 of general formula (I); alkoxy groups such as methoxy, ethoxy, hydroxyethoxy, propoxy, hydroxypropoxy, and butoxy; and aryl groups such as phenyl.

作為由X4表示之-CONR64-(R64表示氫原子或烷基)中的R64的烷基,可以具有取代基,可舉出甲基、乙基、丙基、異丙基、正丁基、第二丁基、己基、2-乙基己基、辛基及十二烷基等碳數20以下的烷基,碳數8以下的烷基為更佳。 As the alkyl group of R 64 in -CONR 64- (where R 64 represents a hydrogen atom or alkyl group) represented by X 4 , it may have substituents, such as methyl, ethyl, propyl, isopropyl, n-butyl, dibutyl, hexyl, 2-ethylhexyl, octyl and dodecyl, which have 20 or fewer carbon atoms, and alkyl groups with 8 or fewer carbon atoms are preferred.

作為X4,單鍵、-COO-或-CONH-為較佳,單鍵或-COO-為更佳。 For X4 , single key, -COO-, or -CONH- are preferred, with single key or -COO- being even better.

作為L4中的伸烷基,可以具有取代基,亞甲基、伸乙基、伸丙基、伸丁基、伸己基及伸辛基等碳數1~8的伸烷基為較佳。 As for the alkyl group in L4 , it can have substituents, and alkyl groups with 1 to 8 carbons such as methylene, ethyl, propyl, butyl, hexyl and octyl are preferred.

作為Ar4,可以具有取代基之碳數6~18的芳香環基為較佳,苯環基、萘環基或聯伸苯基環基為更佳。 As for Ar 4 , it is preferable to have an aromatic cyclic group with 6 to 18 carbon atoms as the substituent, and phenyl cyclic, naphthyl cyclic or biphenyl cyclic are even more preferred.

由通式(I)表示之重複單元具備羥基苯乙烯結構為較佳。亦即,Ar4為苯環基為較佳。 It is preferable that the repeating unit represented by general formula (I) has a hydroxystyrene structure. That is, it is preferable that Ar 4 is a phenylcyclohexyl group.

具有酚性羥基之重複單元的含量相對於樹脂P中的總重複單元為0~50莫耳%為較佳,0~45莫耳%為更佳,0~40莫耳%為特佳。 The content of repeating units containing phenolic hydroxyl groups relative to the total repeating units in resin P is preferably 0-50 mol%, more preferably 0-45 mol%, and exceptionally preferably 0-40 mol%.

((含有具有極性基之有機基團之重複單元)) ((Repeating units containing organic groups with polar radicals))

樹脂P可以含有如下重複單元,該重複單元含有具有極性基之有機基團;尤其還可以含有如下重複單元,該重複單元具有被極性基取代之脂環烴結構。藉此,提高基板密接性、顯影液親和性。 Resin P may contain repeating units that include organic groups with polar radicals; more particularly, it may contain repeating units that have an alicyclic hydrocarbon structure substituted with polar radicals. This improves substrate adhesion and developer affinity.

作為被極性基取代之脂環烴結構的脂環烴結構,金剛烷基、鑽石烷基或降莰烷基為較佳。作為極性基,羥基或氰基為較佳。 For alicyclic hydrocarbon structures substituted with polar groups, diamond-alkyl, diamond-alkyl, or norberargyl groups are preferred. Hydroxyl or cyano groups are preferred as polar groups.

樹脂P含有如下重複單元之情況下,其含量相對於樹脂P中的總重複單元為1~50莫耳%為較佳,1~30莫耳%為更佳,5~25莫耳%為進一步較佳,5~20莫耳%為特佳,該重複單元含有具有極性基之有機基團。 When resin P contains repeating units, the content of these repeating units relative to the total repeating units in resin P is preferably 1-50 mol%, more preferably 1-30 mol%, further preferably 5-25 mol%, and especially preferably 5-20 mol%, wherein the repeating unit contains an organic group having a polar group.

(由(通式(VI)表示之重複單元)) (Repeating units represented by general formula (VI))

樹脂P可以含有由下述通式(VI)表示之重複單元。 Resin P may contain repeating units represented by the following general formula (VI).

通式(VI)中,R61、R62及R63分別獨立地表示氫原子、烷基、環烷基、鹵素原子、氰基或烷氧羰基。但是,R62與Ar6可以鍵結而形成環,該情況下的R62表示單鍵或伸烷基。 In general formula (VI), R 61 , R 62 , and R 63 independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group. However, R 62 can bond with Ar 6 to form a ring, in which case R 62 represents a single bond or an extended alkyl group.

X6表示單鍵、-COO-或-CONR64-。R64表示氫原子或烷基。 X 6 indicates a single bond, -COO-, or -CONR 64- . R 64 indicates a hydrogen atom or an alkyl group.

L6表示單鍵或伸烷基。 L6 indicates a single bond or an alkyl group.

Ar6表示(n+1)價的芳香環基,與R62鍵結而形成環之情況下,表示(n+2)價的芳香環基。 Ar 6 represents an aromatic cyclic group with an (n+1) valence. When it is bonded to R 62 to form a ring, it represents an aromatic cyclic group with an (n+2) valence.

Y2為n≧2的情況下,分別獨立地表示氫原子或藉由酸的作用而脫離之基團。但是,Y2中的至少1個表示藉由酸的作用而脫離之基團。 When Y2 is n≧2, it independently represents either a hydrogen atom or a group that is removed by the action of an acid. However, at least one of Y2 represents a group that is removed by the action of an acid.

n表示1~4的整數。 n represents an integer from 1 to 4.

作為藉由酸的作用而脫離之基團Y2,由下述通式(VI-A)表示之結構為較佳。 The structure represented by the following general formula (VI-A) is preferred for Y2 as a group that is desorbed by the action of acid.

L1及L2分別獨立地表示氫原子、烷基、環烷基、芳基或組合伸烷基與芳基而成之基團。 L1 and L2 represent hydrogen atoms, alkyl, cycloalkyl, aryl, or a combination of alkyl and aryl groups, respectively.

M表示單鍵或2價的連接基。 M represents a single-bond or divalent linker.

Q表示烷基、可以包含雜原子之環烷基、可以包含雜原子之芳基、胺基、銨基、巰基、氰基或醛基。 Q represents an alkyl group, a cycloalkyl group that may contain heteroatoms, or an aryl, amino, ammonium, teryl, cyano, or aldehyde group that may contain heteroatoms.

Q、M、L1中的至少2個可以鍵結而形成環(較佳為5員或6員環)。 At least two of Q, M, and L1 can be bonded to form a ring (preferably a 5- or 6-membered ring).

由上述通式(VI)表示之重複單元為由下述通式(3)表示之重複單元為較佳。 The repeating unit represented by the above general formula (VI) is preferably the repeating unit represented by the following general formula (3).

通式(3)中,Ar3表示芳香環基。 In general formula (3), Ar 3 represents an aromatic cycloalloy.

R3表示氫原子、烷基、環烷基、芳基、芳烷基、烷氧基、醯基或雜環基。 R 3 represents a hydrogen atom, alkyl, cycloalkyl, aryl, aralkyl, alkoxy, acetyl, or heterocyclic group.

M3表示單鍵或2價的連接基。 M3 represents a single-bond or dual-valent linker.

Q3表示烷基、環烷基、芳基或雜環基。 Q3 indicates alkyl, cycloalkyl, aryl, or heterocyclic.

Q3、M3及R3中的至少兩個可以鍵結而形成環。 At least two of Q3 , M3 and R3 can be bonded to form a ring.

Ar3所表示之芳香環基與上述通式(VI)中的n為1之情況下的上述通式(VI)中的Ar6相同,伸苯基或伸萘基為較佳,伸苯基為更佳。 Ar 3 represents the same aromatic cyclic group as Ar 6 in the above general formula (VI) when n is 1, with phenyl or naphthyl preferred, and phenyl preferred even more.

((在側鏈具有矽原子之重複單元)) ((The side chain contains repeating units of silicon atoms))

樹脂P還可以含有在側鏈具有矽原子之重複單元。作為在側鏈具有矽原子之重複單元,例如可舉出具有矽原子之(甲基)丙烯酸酯系重複單元及具有矽原子之乙烯基系重複單元等。在側鏈具有矽原子之重複單元典型地為具有在側鏈具有矽原子之基團之重複單元,作為具有矽原子之基團,例如可舉出三甲基甲矽烷基、三乙基甲矽烷基、三苯基甲矽烷基、三環己基甲矽烷基、三-三甲基矽氧基甲矽烷基、三-三甲基甲矽烷基甲矽烷基、甲基雙三甲基甲矽烷基甲矽烷基、甲基雙三甲基矽氧基甲矽烷基、二甲基三甲基甲矽烷基甲矽烷基、二甲基三甲基矽氧基甲矽烷基及如下述的環狀或直鏈狀聚矽氧烷或籠型或者梯型或無規型倍半矽氧烷結構等。式中,R及R1分別獨立地表示1價的取代基。*表示鍵結鍵。 Resin P may also contain repeating units having silicon atoms in the side chains. Examples of repeating units having silicon atoms in the side chains include (meth)acrylate repeating units having silicon atoms and vinyl repeating units having silicon atoms. A repeating unit having silicon atoms in the side chain is typically a repeating unit having groups having silicon atoms in the side chain. Examples of groups having silicon atoms include trimethylsilyl, triethylsilyl, triphenylsilyl, tricyclohexylsilyl, tri-trimethylsiloxysilyl, tri-trimethylsilylsilyl, tri-trimethylsilylsilyl, methylbistrimethylsilylsilyl, methylbistrimethylsiloxysilyl, dimethyltrimethylsilylsilyl, dimethyltrimethylsiloxysilyl, and cyclic or linear polysiloxane or cage-type or ladder-type or random sesquioxane structures as described below. In the formula, R and R1 independently represent monovalent substituents. * indicates a bond.

[化學式11] [Chemical Formula 11]

作為具有上述基團之重複單元,例如,具有上述基團之丙烯酸酯化合物或來自於甲基丙烯酸酯化合物之重複單元或來自於具有上述基團與乙烯基之化合物之重複單元為較佳。 As a repeating unit having the above-mentioned groups, it is preferable to use, for example, an acrylate compound having the above-mentioned groups, a repeating unit derived from a methacrylate compound, or a repeating unit derived from a compound having the above-mentioned groups and a vinyl group.

樹脂P具有在上述側鏈具有矽原子之重複單元之情況下,其含量相對於樹脂P中的總重複單元為1~30莫耳%為較佳,5~25莫耳%為更佳,5~20莫耳%為特佳。 When resin P has repeating units with silicon atoms in its side chains as described above, the content of silicon atoms relative to the total repeating units in resin P is preferably 1-30 mol%, more preferably 5-25 mol%, and particularly preferably 5-20 mol%.

作為基於GPC(Gel permeation chromatography)法之聚苯乙烯換算值,樹脂P的重量平均分子量為1,000~200,000為較佳,3,000~20,000為更佳,5,000~15,000為特佳。藉由將重量平均分子量設為1,000~200,000,能夠防止耐熱性及乾式蝕刻耐性的劣化,並且能夠防止顯影性的劣化或因黏度變高而製膜性劣化的情形。 As a conversion value for polystyrene based on GPC (Gel permeation chromatography) method, a weight-average molecular weight (WM) of 1,000–200,000 is preferred, 3,000–20,000 is more preferred, and 5,000–15,000 is exceptionally preferred. Setting the WM to 1,000–200,000 helps prevent degradation of heat resistance and dry etching resistance, as well as degradation of developing properties or film-forming properties due to increased viscosity.

分散度(分子量分佈)通常為1~5,1~3為較佳,1.2~3.0為更佳,1.2~2.0為特佳。 The dispersion (molecular weight distribution) is typically 1-5, with 1-3 being better, 1.2-3.0 being even better, and 1.2-2.0 being exceptionally good.

藥液中,在總固體成分中,樹脂P的含量係50~99.9質量%為較佳,60~99.0質量%為更佳。 In the pharmaceutical solution, the content of resin P in the total solids is preferably 50-99.9% by mass, and even more preferably 60-99.0% by mass.

又,藥液中,樹脂P可以使用1種,亦可以併用複數種。 Furthermore, resin P can be used in the solution, either one type or multiple types.

關於藥液中所包含之其他成分(例如酸產生劑、鹼性化合物、猝滅劑、疏水性樹脂、界面活性劑及溶劑等),均能夠使用公知者。作為藥液,例如可舉出日本特開2013-195844號公報、日本特開2016-057645號公報、日本特開2015-207006號公報、國際公開第2014/148241號、日本特開2016-188385號公報及日本特開2017-219818號公報等中所記載之感光化射線性或感放射線性樹脂組成物等中所含之成分。 Regarding other components contained in the pharmaceutical solution (such as acid generators, alkaline compounds, quenchers, hydrophobic resins, surfactants, and solvents), known formulations are permitted. Examples of pharmaceutical solutions include those contained in photosensitive or radiosensitive resin compositions as described in Japanese Patent Application Publication Nos. 2013-195844, 2016-057645, 2015-207006, International Publication No. 2014/148241, 2016-188385, and 2017-219818.

<藥液的用途> <Uses of the medicinal liquid>

藥液用於半導體器件的製造為較佳。尤其,用於形成(例如,包括使用了EUV之圖案形成之步驟)節點10nm以下的微細圖案為更佳。 The solution is preferred for use in the fabrication of semiconductor devices. It is particularly suitable for forming fine patterns (e.g., including steps involving EUV patterning) with nodes smaller than 10 nm.

藥液為用於圖案寬度和/或圖案間隔為17nm以下(較佳為15nm以下,更佳為12nm以下)和/或所得到之配線寬度和/或配線間隔為17nm以下之阻劑製程之藥液(預濕液、顯影液、沖洗液、光阻液的溶劑及剝離液等),換言之,尤其較佳地用於使用圖案寬度和/或圖案間隔為17nm以下之光阻膜來製作之半導體器件的製造。 The solution is a solvent (pre-wetting solution, developer, rinsing solution, solvent for photoresist, and stripping solution, etc.) used in resist processes where the pattern width and/or pattern spacing is 17 nm or less (preferably 15 nm or less, more preferably 12 nm or less) and/or the resulting wiring width and/or wiring spacing is 17 nm or less. In other words, it is particularly preferred for the manufacture of semiconductor devices using photoresist films with a pattern width and/or pattern spacing of 17 nm or less.

具體而言,在包含微影步驟、蝕刻步驟、離子植入步驟及剝離步驟等之半導體元件的製造步驟中,在結束各步驟之後或轉移至下一個步驟之前,用於處理有機物,具體而言,較佳地用作預濕液、顯影液、沖洗液及剝離液等。例如,亦能夠用於阻劑塗佈前後的半導體基板的邊緣線的沖洗。 Specifically, in the manufacturing process of semiconductor devices, including lithography, etching, ion implantation, and peeling steps, this solution is used to treat organic matter after each step and before moving to the next. Preferably, it is used as a pre-wetting solution, developer, rinse solution, or peeling solution. For example, it can also be used to rinse the edges of semiconductor substrates before and after resist coating.

又,上述藥液亦能夠用作光阻液中所含有之樹脂的稀釋液、光阻液中所含有之溶劑。又,亦可以藉由其他有機溶劑和/或水等而進行稀釋。 Furthermore, the aforementioned solution can also be used as a diluent for resins contained in photoresists, and as a solvent for photoresists. It can also be diluted using other organic solvents and/or water.

又,上述藥液除了用於半導體器件的製造以外,亦能夠用於其他 用途,亦能夠用作聚醯亞胺、感測器用阻劑、透鏡用阻劑等顯影液及沖洗液等。 Furthermore, besides its use in the manufacture of semiconductor devices, the aforementioned solution can also be used for other applications, such as as a developing solution and rinsing solution for polyimide, sensor resists, lens resists, etc.

又,上述藥液亦能夠用作醫療用途或清洗用途的溶劑。尤其,能夠較佳地用於容器、配管及基板(例如,晶圓及玻璃等)等的清洗中。 Furthermore, the aforementioned solution can also be used as a solvent for medical or cleaning purposes. In particular, it is well-suited for cleaning containers, piping, and substrates (e.g., wafers and glass).

其中,若本藥液用作選自包括顯影液、沖洗液、晶圓清洗液、線清洗液、預濕液、光阻液、下層膜形成用液、上層膜形成用液及硬塗形成用液之群組中之至少1種液體的原料,則更發揮效果。 The effect is further enhanced when the solution is used as a raw material selected from at least one liquid selected from the group consisting of developer, washing solution, wafer cleaning solution, wire cleaning solution, pre-wetting solution, photoresist, lower film forming solution, upper film forming solution, and hard coating forming solution.

〔藥液之製造方法〕 [Method for manufacturing the liquid medicine]

作為上述藥液之製造方法,並無特別限制,能夠使用公知的製造方法。其中,可獲得顯示更優異之本發明的效果之方面而言,藥液之製造方法具有使用過濾器對含有溶劑之被純化物進行過濾而獲得藥液之過濾步驟為較佳。 There are no particular limitations on the method for manufacturing the aforementioned medicinal solution, and known manufacturing methods can be used. However, in terms of obtaining superior effects of the present invention, a filtration step that uses a filter to filter the purified substance containing the solvent to obtain the medicinal solution is preferable.

在過濾步驟中使用之被純化物可以藉由購買等來採購,亦可以使原料進行反應而獲得。作為被純化物,雜質的含量少為較佳。作為該等被純化物的市售品,例如,可舉出稱為“高純度等級產品”之市售品。 The purified material used in the filtration step can be purchased or obtained through a reaction of raw materials. As a purified material, a low impurity content is preferable. Commercially available products, for example, are labeled as "high purity grade products."

作為使原料進行反應而獲得被純化物(典型地,含有有機溶劑之被純化物)之方法,並無特別限制,能夠使用公知的方法。例如,可舉出在觸媒的存在下,使1種或複數種原料進行反應,而獲得有機溶劑之方法。 There are no particular limitations on the method for reacting raw materials to obtain a purified product (typically a purified product containing an organic solvent), and known methods can be used. For example, a method for obtaining an organic solvent by reacting one or more raw materials in the presence of a catalyst can be cited.

更具體而言,例如,可舉出使乙酸和正丁醇在硫酸的存在下進行反應而獲得乙酸丁酯之方法;使乙烯、氧及水在Al(C2H5)3的存在下進行反應而獲得1-己醇之方法;使順式-4-甲基-2-戊烯在Ipc2BH(Diisopinocampheylborane:二異松蒎烯基磞烷)的存在下進行反應而獲得4-甲基-2-戊醇之方法;使環氧丙烷、甲醇及乙酸在硫酸的存在下進行反應而 獲得PGMEA(丙二醇1-單甲醚2-乙酸酯)之方法;使丙酮及氫在氧化銅-氧化鋅-氧化鋁的存在下進行反應而獲得IPA(isopropyl alcohol:異丙醇)之方法;及使乳酸及乙醇進行反應而獲得乳酸乙酯之方法;等。 More specifically, examples include methods for reacting acetic acid and n-butanol in the presence of sulfuric acid to obtain butyl acetate; methods for reacting ethylene, oxygen, and water in the presence of Al( C₂H₅ ) to obtain 1-hexanol; methods for reacting cis-4-methyl-2-pentene in the presence of Ipc₂BH (Diisopinocampheylborane) to obtain 4-methyl-2-pentanol; methods for reacting propylene oxide, methanol, and acetic acid in the presence of sulfuric acid to obtain PGMEA (propylene glycol 1-monomethyl ether 2-acetic acid); and methods for reacting acetone and hydrogen in the presence of copper oxide-zinc oxide-aluminum oxide to obtain IPA (isopropyl) Methods for obtaining ethyl lactate by reacting lactic acid and ethanol (isopropanol); and methods for obtaining ethyl lactate by reacting lactic acid and ethanol; etc.

<過濾步驟> <Filtration Steps>

本發明的實施形態之藥液之製造方法具有使用過濾器對上述被純化物進行過濾而得到藥液之過濾步驟。作為使用過濾器對被純化物進行過濾之方法,並無特別限制,但是在加壓或未加壓下使被純化物通過(通液)具有殼體和容納於殼體中之過濾芯之過濾器單元為較佳。 The method for manufacturing the pharmaceutical solution according to an embodiment of the present invention includes a filtration step of filtering the purified substance using a filter to obtain the pharmaceutical solution. There are no particular limitations on the method of filtering the purified substance using a filter, but it is preferable to pass the purified substance through (fluid-passing through) a filter unit having a shell and a filter element housed within the shell, whether under pressure or not.

(過濾器的細孔直徑) (Diameter of the filter's pores)

作為過濾器的細孔直徑,並無特別限制,能夠使用通常用於被純化物的過濾而使用之細孔直徑的過濾器。其中,將藥液所含有之粒子(含金屬的粒子等)的數量更容易控制在所期望的範圍內之方面而言,過濾器的細孔直徑係200nm以下為較佳,20nm以下為更佳,10nm以下為進一步較佳,5nm以下為特佳,3nm以下為最佳。作為下限值並無特別限制,但從生產性的觀點而言,一般係1nm以上為較佳。 There are no particular limitations on the pore diameter of the filter; filters with pore diameters commonly used for filtering purified substances can be used. However, in terms of making it easier to control the number of particles (including metal particles) contained in the drug solution within the desired range, a pore diameter of 200 nm or less is preferred, 20 nm or less is even better, 10 nm or less is further better, 5 nm or less is particularly good, and 3 nm or less is optimal. There are no particular limitations on the lower limit, but from a production standpoint, 1 nm or more is generally preferred.

另外,在本說明書中,過濾器的細孔直徑及細孔直徑分佈係指由異丙醇(IPA)或HFE-7200(“Novec 7200”,3M Company製造,氫氟醚、C4F9OC2H5)的泡點確定之細孔直徑及細孔直徑分佈。 Additionally, in this manual, the pore diameter and pore diameter distribution of the filter refer to the pore diameter and pore diameter distribution determined by the bubble point of isopropanol (IPA) or HFE-7200 (“Novec 7200”, manufactured by 3M Company, hydrofluoroether , C4F9OC2H5 ) .

若過濾器的細孔直徑為5.0nm以下,則更容易控制藥液中的含有粒子數量之方面而言為較佳。以下,還將細孔直徑為5nm以下的過濾器稱為“微小孔徑過濾器”。 If the pore diameter of the filter is 5.0 nm or less, it is better to control the number of particles in the drug solution more easily. Hereinafter, filters with a pore diameter of 5 nm or less will be referred to as "micropore filters".

另外,微小孔徑過濾器可以單獨使用,亦可以與具有其他細孔直徑之過 濾器一起使用。其中,生產性更優異之觀點而言,與具有更大的細孔直徑之過濾器一起使用為較佳。在該情況下,若使預先藉由具有更大的細孔直徑之過濾器進行過濾而得之被純化物通過微小孔徑過濾器,則可防止微小孔徑過濾器的堵塞。 Furthermore, micropore filters can be used alone or in conjunction with filters having other pore diameters. From a productivity standpoint, using them in conjunction with filters having larger pore diameters is preferable. In this case, passing the purified material, pre-filtered with a filter having larger pore diameters, through the micropore filter prevents clogging of the micropore filter.

亦即,作為過濾器的細孔直徑,在使用1個過濾器之情況下,細孔直徑係5.0nm以下為較佳,在使用2個以上的過濾器之情況下,具有最小的細孔直徑之過濾器的細孔直徑係5.0nm以下為較佳。 In other words, when using a single filter, a pore diameter of 5.0 nm or less is preferred. When using two or more filters, the filter with the smallest pore diameter is preferably 5.0 nm or less.

作為依次使用細孔直徑不同的2種以上的過濾器之形態,並無特別限制,但是可舉出沿著移送被純化物之管路,依次配置已進行說明之過濾器單元之方法。此時,若作為管路整體而欲將被純化物的每單位時間的流量設為一定,則有時與細孔直徑更大的過濾器單元相比,會對細孔直徑更小的過濾器單元施加更大的壓力。在該情況下,在過濾器單元之間配置壓力調節閥及阻尼器等,將對具有小的細孔直徑之過濾器單元施加之壓力設為一定或者沿著管路並排配置容納有相同的過濾器之過濾器單元,從而增加過濾面積為較佳。這樣,能夠更穩定地控制藥液中的粒子的數量。 There are no particular restrictions on the use of two or more filters with different pore diameters in sequence, but a method can be given as an example of arranging the filter units as described above sequentially along the pipeline that transports the purified material. In this case, if the flow rate of the purified material per unit time is to be set constant as a whole pipeline, sometimes a filter unit with a smaller pore diameter will exert greater pressure than a filter unit with a larger pore diameter. In this case, it is preferable to install pressure regulating valves and dampers between filter units to maintain a constant pressure on filter units with small pore diameters, or to arrange filter units containing identical filters side-by-side along the pipeline, thereby increasing the filtration area. This allows for more stable control of the number of particles in the drug solution.

(過濾器的材料) (Filter material)

作為過濾器的材料,並無特別限制,作為過濾器的材料,能夠使用公知的材料。具體而言,在樹脂之情況下,可舉出尼龍(例如,6-尼龍及6,6-尼龍)等聚醯胺;聚乙烯及聚丙烯等聚烯烴;聚苯乙烯;聚醯亞胺;聚醯胺醯亞胺;聚(甲基)丙烯酸酯;聚四氟乙烯、全氟烷氧基烷烴、全氟乙烯丙烯共聚物、乙烯˙四氟乙烯共聚物、乙烯-三氟氯乙烯共聚物、聚三氟氯乙烯、聚偏二氟乙烯及聚氟乙烯等聚氟碳化物;聚乙烯醇;聚酯;纖維素;醋酸纖 維素等。其中,具有更優異之耐溶劑性,且所獲得之藥液具有更優異之缺陷抑制性之方面而言,選自包含尼龍(其中,6,6-尼龍為較佳)、聚烯烴(其中,聚乙烯為較佳)、聚(甲基)丙烯酸酯及聚氟碳化物(其中,聚四氟乙烯(PTFE)、全氟烷氧基烷烴(PFA)為較佳。)之群組中之至少1種為較佳。該等聚合物能夠單獨使用或者組合使用2種以上。 There are no particular limitations on the materials used in the filter; known materials can be used. Specifically, in the case of resins, examples include polyamides such as nylon (e.g., 6-nylon and 6,6-nylon); polyolefins such as polyethylene and polypropylene; polystyrene; polyimide; polyamide-imide; poly(meth)acrylate; polytetrafluoroethylene, perfluoroalkoxyalkylene, perfluoroethylene-propylene copolymer, ethylene-tetrafluoroethylene copolymer, ethylene-trifluorochloroethylene copolymer, polychlorotrifluoroethylene, polyvinylidene fluoride, and polyvinyl fluoride, etc., as well as polyfluorocarbons; polyvinyl alcohol; polyester; cellulose; cellulose acetate, etc. Of particular interest, in terms of superior solvent resistance and superior defect suppression properties of the obtained pharmaceutical solution, at least one polymer selected from the group consisting of nylon (preferably 6,6-nylon), polyolefins (preferably polyethylene), poly(meth)acrylates, and polyfluorocarbons (preferably polytetrafluoroethylene (PTFE) and perfluoroalkoxyalkylene (PFA)). These polymers can be used alone or in combination of two or more.

又,除了樹脂以外,亦可以為矽藻土及玻璃等。 In addition to resin, it can also be used to make diatomaceous earth and glass.

除此之外,還可以將使聚醯胺(例如,尼龍-6或尼龍-6,6等尼龍)與聚烯烴(後述之UPE等)接枝共聚而得之聚合物(尼龍接枝UPE等)設為過濾器的材料。 In addition, polymers obtained by graft copolymerization of polyamides (e.g., nylon-6 or nylon-6,6, etc.) with polyolefins (such as UPE described later) (nylon-grafted UPE, etc.) can be used as filter materials.

又,過濾器可以為經表面處理之過濾器。作為表面處理的方法並無特別限制,能夠使用公知的方法。作為表面處理的方法,例如可舉出化學修飾處理、電漿處理、疏水處理、塗層、氣體處理及燒結等。 Furthermore, the filter can be a surface-treated filter. There are no particular limitations on the surface treatment method; well-known methods can be used. Examples of surface treatment methods include chemical modification, plasma treatment, hydrophobic treatment, coating, gas treatment, and sintering.

電漿處理會使過濾器的表面親水化,因此為較佳。作為電漿處理而被親水化之過濾材料的表面上的水接觸角並無特別限制,但利用用接觸角度計測量在25℃下之靜態接觸角係60°以下為較佳,50°以下為更佳,30°以下為特佳。 Plasma treatment hydrophilizes the filter surface, which is therefore preferable. There are no particular limitations on the water contact angle on the surface of the filter material hydrophilized by plasma treatment, but a static contact angle of 60° or less at 25°C, measured with a contact angle meter, is preferred, less than 50° is better, and less than 30° is exceptionally good.

作為化學修飾處理,將離子交換基導入到基材中之方法為較佳。 As a chemical modification treatment, introducing ion exchange groups into the substrate is preferable.

亦即,作為過濾器,將在上述舉出之各材料作為基材,並將離子交換基導入到上述基材中之過濾器為較佳。典型地,包括包含在上述基材的表面含有離子交換基之基材之層之過濾器為較佳。作為經表面修飾之基材並無特別限制,更容易製造之方面而言,將離子交換基導入到上述聚合物中之過濾器為較佳。 That is, as a filter, it is preferable to use the materials mentioned above as substrates and introduce ion exchange groups into the substrates. Typically, a filter comprising a layer of substrate containing ion exchange groups on its surface is preferred. There are no particular limitations on the surface-modified substrate; however, for ease of manufacture, a filter that introduces ion exchange groups into the polymer is preferred.

關於離子交換基,作為陽離子交換基可舉出磺酸基、羧基及磷酸基等,作為陰離子交換基可舉出4級銨基等。作為將離子交換基導入到聚合物中之方法並無特別限制,可舉出使含有離子交換基和聚合性基之化合物與聚合物進行反應而典型地進行接枝化之方法。 Regarding ion exchange groups, examples of cation exchange groups include sulfonic acid groups, carboxyl groups, and phosphate groups, while examples of anion exchange groups include fourth-order ammonium groups. There are no particular limitations on the methods for introducing ion exchange groups into polymers; typical methods involve grafting by reacting compounds containing both ion exchange groups and polymerizable groups with the polymer.

作為離子交換基的導入方法並無特別限制,向上述樹脂的纖維照射電離放射線(α射線、β射線、γ射線、X射線及電子束等)而在樹脂中產生活性部分(自由基)。將該照射後之樹脂浸漬於含有單體之溶液中,使單體接枝聚合於基材。其結果,該單體生成作為接枝聚合側鏈而鍵結聚烯烴纖維之聚合物。使含有該產生之聚合物作為側鏈之樹脂與含有陰離子交換基或陽離子交換基之化合物接觸反應,將離子交換基導入到經接枝聚合之側鏈的聚合物中而得到最終產物。 There are no particular limitations on the method of introducing ion exchange groups. The resin fibers are irradiated with ionizing radiation (alpha, beta, gamma, X-rays, and electron beams, etc.) to generate active components (free radicals) in the resin. The irradiated resin is then immersed in a solution containing monomers, allowing the monomers to graft polymerize onto a substrate. As a result, the monomers form a polymer that bonds to polyolefin fibers as graft polymer side chains. The resin containing this generated polymer as a side chain is then reacted with a compound containing anion or cation exchange groups, introducing ion exchange groups into the graft polymer side chains to obtain the final product.

又,過濾器亦可以為將藉由放射線接枝聚合法而形成有離子交換基之織布或不織布與以往的玻璃棉、織布或不織布的過濾材料組合之構成。 Furthermore, the filter can also be constructed by combining woven or non-woven fabrics with ion-exchange groups formed through radiation graft polymerization with conventional filter materials such as glass wool, woven or non-woven fabrics.

若使用含有離子交換基之過濾器,則將含有金屬原子之粒子在藥液中的含量更容易控制在所期望的範圍內。作為含有離子交換基之過濾器的材料,並無特別限制,但是可舉出將離子交換基導入到聚氟碳化物及聚烯烴中之材料等,將離子交換基導入到聚氟碳化物中之材料為更佳。 Using a filter containing ion-exchange groups makes it easier to control the concentration of metal-atom-containing particles in the drug solution within the desired range. There are no particular limitations on the materials used for filters containing ion-exchange groups, but examples include materials that incorporate ion-exchange groups into fluorocarbons and polyolefins; materials that incorporate ion-exchange groups into fluorocarbons are preferred.

作為含有離子交換基之過濾器的細孔直徑,並無特別限制,但是1~30nm為較佳,5~20nm為更佳。含有離子交換基之過濾器可以兼作已說明之具有最小的細孔直徑之過濾器,亦可以別於具有最小的細孔直徑之過濾器而使用。其中,從可獲得顯示更優異之本發明的效果之方面而言,過濾步驟中使用含有離子交換基之過濾器及不具有離子交換基且具有最小的細孔 直徑之過濾器之形態為較佳。 There are no particular limitations on the pore diameter of the filter containing the ion exchanger, but 1-30 nm is preferred, and 5-20 nm is even better. The filter containing the ion exchanger can also be used as the filter with the smallest pore diameter as described above, or it can be used separately from the filter with the smallest pore diameter. From the perspective of obtaining superior performance of the present invention, it is preferable to use both a filter containing the ion exchanger and a filter without the ion exchanger and with the smallest pore diameter in the filtration step.

作為已說明之具有最小的細孔直徑之過濾器的材料,並無特別限制,但是從耐溶劑性等的觀點而言,通常,選自包含聚氟碳化物及聚烯烴之群組中之至少1種為較佳,聚烯烴為更佳。 There are no particular limitations on the material used for the filter, which has been described as having the smallest pore diameter. However, from the viewpoint of solvent resistance, it is generally preferable to select at least one material from the group consisting of polyfluorocarbons and polyolefins, with polyolefins being more preferred.

因此,作為在過濾步驟中使用之過濾器,可以使用材料不同的2種以上的過濾器,例如,可以使用選自包含聚烯烴、聚氟碳化物、聚醯胺及將離子交換基導入到該等中之材料的過濾器之群組中之2種以上。 Therefore, as the filter used in the filtration step, two or more filters made of different materials can be used. For example, two or more filters selected from the group consisting of polyolefins, polyfluorocarbons, polyamides, and materials incorporating ion exchange groups can be used.

(過濾器的細孔結構) (The fine pore structure of the filter)

作為過濾器的細孔結構,並無特別限制,可以依據被純化物中的成分而適當地選擇。在本說明書中,過濾器的細孔結構係指細孔直徑分佈、過濾器中的細孔的位置分佈及細孔的形狀等,典型地,能夠藉由過濾器之製造方法來進行控制。 There are no particular limitations on the pore structure of a filter; it can be appropriately selected based on the composition of the substance being purified. In this specification, the pore structure of the filter refers to the pore diameter distribution, the positional distribution of the pores within the filter, and the shape of the pores, which can typically be controlled through the filter's manufacturing method.

例如,若對樹脂等的粉末進行燒結來形成則可獲得多孔膜、以及若藉由電紡絲(electrospinning)、電吹(electroblowing)及熔吹(meltblowing)等方法來形成則可獲得纖維膜。該等的細孔結構分別不同。 For example, porous membranes can be obtained by sintering powders such as resins, and fibrous membranes can be obtained by methods such as electrospinning, electroblowing, and meltblowing. The micropore structures of these methods are different.

“多孔膜”係指保持凝膠、粒子、膠體、細胞及低聚物等被純化物中的成分,但實質上小於細孔的成分通過細孔之膜。有時基於多孔膜的被純化物中的成分的保持依賴於動作條件,例如面速度、界面活性劑的使用、pH及該等的組合,且有可能依賴於多孔膜的孔徑、結構及應被除去之粒子的尺寸及結構(硬質粒子或凝膠等)。 A "porous membrane" refers to a membrane that retains components in a purified material, such as gels, particles, colloids, cells, and oligomers, but allows components smaller than the pore size to pass through. Sometimes, the retention of components in a purified material using a porous membrane depends on operating conditions, such as surface velocity, the use of surfactants, pH, and combinations thereof, and may also depend on the pore size and structure of the porous membrane, as well as the size and structure of the particles to be removed (hard particles or gels, etc.).

在被純化物含有帶負電之粒子之情況下,為了除去該等粒子,聚醯胺製過濾器發揮非篩膜的功能。典型的非篩膜包括尼龍-6膜及尼龍-6,6膜 等尼龍膜,但並不限制於該等。 When the purified material contains negatively charged particles, polyamide filters function as non-screening membranes to remove these particles. Typical non-screening membranes include nylon-6 membranes and nylon-6,6 membranes, but are not limited to these.

另外,本說明書中所使用之基於“非篩”之保持機構係指由與過濾器的壓力降低或細孔徑無關之妨礙、擴散及吸附等機構而產生之保持。 Furthermore, the "non-sieve" based retention mechanism used in this manual refers to retention achieved through mechanisms such as obstruction, diffusion, and adsorption, which are independent of filter pressure reduction or pore size.

非篩保持包括與過濾器的壓力降低或過濾器的細孔徑無關地除去被純化物中的除去對象粒子之妨礙、擴散及吸附等保持機構。粒子在過濾器表面上的吸附例如能夠藉由分子間的範德華及靜電力等來介導。在具有蛇行狀的通路之非篩膜層中移動之粒子在無法充分迅速地改變方向以免與非篩膜接觸時產生妨礙效果。基於擴散的粒子輸送係由形成粒子與過濾材料碰撞之一定的概率之、主要由小粒子的無規運動或布朗運動產生。當在粒子與過濾器之間不存在排斥力時,非篩保持機構能夠變得活躍。 Non-sieve retention encompasses retention mechanisms that remove target particles from the purified material regardless of filter pressure reduction or pore size, including obstruction, diffusion, and adsorption. Particle adsorption on the filter surface can be mediated by intermolecular van der Waals forces and electrostatic forces. Particles moving within a non-sieve membrane layer with serpentine pathways may obstruct contact with the membrane if they cannot change direction sufficiently quickly. Diffusion-based particle transport is generated primarily by the random or Brownian motion of small particles, resulting in a probability of collision between particles and the filter material. Non-sieve retention mechanisms become active when no repulsive force exists between the particles and the filter.

UPE(超高分子量聚乙烯)過濾器典型地為篩膜。篩膜主要係指通過篩保持機構捕獲粒子之膜或為了通過篩保持機構捕獲粒子而被最優化之膜。 UPE (ultra-high molecular weight polyethylene) filters are typically sieve membranes. A sieve membrane primarily refers to a membrane that traps particles through a sieving mechanism, or a membrane optimized for trapping particles through a sieving mechanism.

作為篩膜的典型例,包括聚四氟乙烯(PTFE)膜和UPE膜,但並不限制於該等。 Typical examples of screen membranes include, but are not limited to, polytetrafluoroethylene (PTFE) membranes and UPE membranes.

另外,“篩保持機構”係指保持除去對象粒子大於多孔膜的細孔徑的結果。關於篩保持力,可藉由形成濾餅(膜的表面上的成為除去對象之粒子的凝聚)來提高。濾餅有效地發揮二級過濾器的功能。 Additionally, the "screening mechanism" refers to the ability to retain particles larger than the pore size of the porous membrane. Screening force can be enhanced by forming a filter cake (a condensation of particles on the membrane surface that become the target particles). The filter cake effectively performs the function of a secondary filter.

纖維膜的材質只要為能夠形成纖維膜之聚合物,則並無特別限制。作為聚合物,例如可舉出聚醯胺等。作為聚醯胺,例如可舉出尼龍6及尼龍6,6等。作為形成纖維膜之聚合物,可以為聚(醚碸)。當纖維膜位於多孔膜的一次側時,纖維膜的表面能比位於二次側的多孔膜的材質之聚合物高為 較佳。作為該等組合,例如可舉出纖維膜的材料為尼龍且多孔膜為聚乙烯(UPE)之情況。 There are no particular limitations on the material of the fiber membrane, as long as it is a polymer capable of forming a fiber membrane. Examples of polymers include polyamide. Examples of polyamides include nylon 6 and nylon 6,6. Poly(ether monoxide) can be used as the polymer forming the fiber membrane. When the fiber membrane is located on the primary side of the porous membrane, it is preferable that the surface energy of the fiber membrane is higher than that of the polymer material of the porous membrane located on the secondary side. An example of such a combination is a case where the fiber membrane is made of nylon and the porous membrane is made of polyethylene (UPE).

作為纖維膜的製造方法並無特別限制,能夠使用公知的方法。作為纖維膜之製造方法,例如可舉出電紡絲、電吹及熔噴等。 There are no particular limitations on the manufacturing method of the fiber membrane; well-known methods can be used. Examples of manufacturing methods for fiber membranes include electrospinning, electric blowing, and meltblowing.

作為多孔膜(例如,包含UPE及PTFE等之多孔膜)的細孔結構並無特別限制,作為細孔的形狀,例如可舉出蕾絲狀、串狀及節點狀等。 There are no particular limitations on the microporous structure of porous membranes (e.g., porous membranes containing UPE and PTFE). Examples of micropore shapes include lace-like, string-like, and nodular structures.

多孔膜中之細孔的大小分佈和該膜中之位置分佈並無特別限制。可以為大小分佈更小且該膜中之分佈位置對稱。又,可以為大小分佈更大,且該膜中的分佈位置不對稱(還將上述膜稱為“非對稱多孔膜”。)。非對稱多孔膜中,孔的大小在膜中發生變化,典型地,孔徑從膜的一個表面向膜的另一個表面變大。此時,將孔徑大的細孔多的一側的表面稱為“開放(open)側”,將孔徑小的細孔多的一側的表面稱為“密集(tite)側”。 There are no particular restrictions on the size distribution and positional distribution of pores in a porous membrane. It can have a smaller size distribution and symmetrical positional distribution within the membrane. Alternatively, it can have a larger size distribution and asymmetrical positional distribution within the membrane (these membranes are also called "asymmetric porous membranes"). In asymmetric porous membranes, the pore size varies within the membrane; typically, the pore diameter increases from one surface to the other. In this case, the surface with more large-diameter pores is called the "open side," and the surface with more small-diameter pores is called the "tite side."

又,作為非對稱多孔膜,例如可舉出細孔的大小在膜的厚度內的某一位置上為最小之膜(將其亦稱為“沙漏形狀”。)。 Furthermore, as an asymmetric porous membrane, one can cite an example where the pore size is smallest at a certain location within the membrane's thickness (this is also known as an "hourglass shape").

若使用非對稱多孔膜將一次側設為更大尺寸的孔,換言之,若將一次側設為開放側,則使其產生預過濾效果。 Using an asymmetric porous membrane with larger pore sizes on the primary side—in other words, making the primary side open—creates a pre-filtration effect.

多孔膜可以包含PESU(聚醚碸)、PFA(全氟烷氧基烷烴、四氟化乙烯與全氟烷氧基烷烴的共聚物)、聚醯胺及聚烯烴等熱塑性聚合物,亦可以包含聚四氟乙烯等。 Porous membranes can contain thermoplastic polymers such as PESU (polyethersulfone), PFA (a copolymer of perfluoroalkoxyalkylene, ethylene tetrafluoride, and perfluoroalkoxyalkylene), polyamide, and polyolefins, and may also contain polytetrafluoroethylene.

其中,作為多孔膜的材料,超高分子量聚乙烯為較佳。超高分子量聚乙烯係指具有極長的鏈之熱塑性聚乙烯,分子量為百萬以上、典型地200~600萬為較佳。 Among these, ultra-high molecular weight polyethylene (UHMWPE) is preferred as a material for porous membranes. UHMWPE refers to thermoplastic polyethylene with extremely long chains, and a molecular weight of over one million, typically 2-6 million, is preferred.

作為在過濾步驟中使用之過濾器,可以使用細孔結構不同的2種以上的過濾器,亦可以併用多孔膜及纖維膜的過濾器。作為具體例,可舉出使用尼龍纖維膜的過濾器和UPE多孔膜的過濾器之方法。 As filters used in the filtration process, two or more filters with different pore structures can be used, and filters using both porous membranes and fiber membranes can be used simultaneously. For example, a method using a nylon fiber membrane filter and a UPE porous membrane filter can be given.

又,關於過濾器,在使用之前充分清洗之後使用為較佳。 Also, regarding the filter, it is best to clean it thoroughly before use.

在使用未清洗的過濾器(或未進行充分清洗之過濾器)之情況下,過濾器所含有之雜質容易進入藥液中。 When using an uncleaned filter (or a filter that has not been thoroughly cleaned), impurities contained in the filter can easily enter the drug solution.

作為過濾器所含有之雜質,例如可舉出上述有機成分,若使用未清洗的過濾器(或未進行充分清洗之過濾器)來實施過濾步驟,則藥液中的有機成分的含量有時會超出作為本發明的藥液的允許範圍。 Impurities contained in the filter, such as the aforementioned organic components, can sometimes lead to concentrations in the solution exceeding the permissible limits for the medicinal solution of this invention if an uncleaned filter (or an insufficiently cleaned filter) is used for filtration.

例如,將UPE等聚烯烴及PTFE等聚氟碳用於過濾器之情況下,過濾器容易含有作為雜質的碳數12~50的烷烴。 For example, when polyolefins such as UPE and polyfluorocarbons such as PTFE are used in filters, the filters are prone to containing alkanes with 12 to 50 carbon atoms as impurities.

又,將使聚醯胺(尼龍等)與尼龍等聚醯胺、聚醯亞胺及聚烯烴(UPE等)接枝共聚而成之聚合物用於過濾器之情況下,過濾器容易含有作為雜質的碳數12~50的烯烴。 Furthermore, when a filter is used to obtain a polymer formed by graft copolymerization of polyamide (such as nylon) with polyamides such as nylon, polyimide, and polyolefins (such as UPE), the filter is prone to containing olefins with 12 to 50 carbon atoms as impurities.

過濾器的清洗的方法例如可舉出將過濾器浸漬於雜質含量少的有機溶劑(例如,經蒸餾純化之有機溶劑(PGMEA等))1週以上之方法。該情況下,上述有機溶劑的液溫為30~90℃為較佳。 One method for cleaning the filter is, for example, immersing it in an organic solvent with low impurity content (e.g., a distilled and purified organic solvent (PGMEA, etc.)) for more than one week. In this case, a solvent temperature of 30–90°C is preferred.

可以如下進行調整:使用調整了清洗程度之過濾器對被純化物進行過濾,從而使所得到之藥液以所期望的量來含有來自於過濾器的有機成分。 The following adjustments can be made: Filter the purified material using a filter with an adjusted cleaning level, thereby ensuring the resulting solution contains the desired amount of organic components from the filter.

過濾步驟可以為使被純化物通過選自包括過濾器的材料、細孔徑及細孔結構之群組中之至少1種不同之2種以上的過濾器之多級過濾步驟。 The filtration process can be a multi-stage filtration process that passes the purified material through at least two different filters selected from at least one different group of filters, including filter materials, pore sizes, and pore structures.

又,可以使被純化物經複數次通過相同的過濾器,亦可以使被純化物經 複數次通過相同種類的過濾器。 Furthermore, the purified substance can be passed through the same filter multiple times, or it can be passed through the same type of filter multiple times.

作為在過濾步驟中使用之純化裝置的接液部(係指有可能與被純化物及藥液接觸之內壁面等)的材料,並無特別限制,但是由選自包含非金屬材料(氟樹脂等)及經電解研磨之金屬材料(不鏽鋼等)之群組中之至少1種(以下,還將該等統稱為“耐腐蝕材料”。)形成為較佳。例如,所謂製造罐的接液部由耐腐蝕材料形成,可舉出製造罐本身由耐腐蝕材料形成或製造罐的內壁面等被耐腐蝕材料被覆之情況。 The material used for the wetted parts (inner wall surfaces, etc., that may come into contact with the purified substance and the chemical solution) of the purification apparatus used in the filtration step is not particularly limited, but it is preferable to use at least one material selected from the group consisting of non-metallic materials (such as fluoropolymers) and electrolytically polished metallic materials (such as stainless steel) (hereinafter, these will also be collectively referred to as "corrosion-resistant materials"). For example, the wetted parts of a manufacturing tank being formed of a corrosion-resistant material could be formed of a corrosion-resistant material itself, or the inner wall surfaces of the manufacturing tank being covered with a corrosion-resistant material.

作為上述非金屬材料,並無特別限制,能夠使用公知的材料。 There are no particular restrictions on the non-metallic materials used; any known materials can be used.

作為非金屬材料,例如,可舉出選自包含聚乙烯樹脂、聚丙烯樹脂、聚乙烯-聚丙烯樹脂以及氟樹脂(例如,四氟乙烯樹脂、四氟乙烯-全氟烷基乙烯基醚共聚合樹脂、四氟乙烯-六氟丙烯共聚合樹脂、四氟乙烯-乙烯共聚合樹脂、三氟氯乙烯-乙烯共聚合樹脂、偏二氟乙烯樹脂、三氟氯乙烯共聚合樹脂及氟乙烯樹脂等)之群組中之至少1種,但並不限制於此。 As a non-metallic material, examples include, but are not limited to, at least one selected from the group consisting of polyethylene resin, polypropylene resin, polyethylene-polypropylene resin, and fluoropolymers (e.g., tetrafluoroethylene resin, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer resin, tetrafluoroethylene-hexafluoropropylene copolymer resin, tetrafluoroethylene-ethylene copolymer resin, trifluorochloroethylene-ethylene copolymer resin, vinylidene fluoride resin, trifluorochloroethylene copolymer resin, and fluoroethylene resin, etc.).

另外,作為非金屬材料,從防止藥液的靜電的觀點考慮,可使用實施了防靜電處理之材料。作為實施防靜電處理之方法,可舉出與上述非金屬材料(例如上述氟樹脂)一同使用導電性材料之方法。 Furthermore, from the viewpoint of preventing static electricity in the liquid, materials treated with anti-static agents can be used as non-metallic materials. One method for implementing anti-static treatment is to use a conductive material together with the aforementioned non-metallic material (e.g., the aforementioned fluororesin).

導電性材料包含碳為較佳。作為碳,從更抑制藥液的帶電之觀點考慮,選自包括碳粒子(例如,石墨、碳黑、乙炔黑、科琴黑)、奈米碳管(例如,石墨烯片材成為單層或多層的同軸管狀者。亦稱為CNT。)及碳纖維之群組中之至少1種材料為較佳。 The conductive material preferably contains carbon. From the viewpoint of better suppressing the charging of the liquid, carbon is preferably selected from at least one material including carbon particles (e.g., graphite, carbon black, acetylene black, Ketjen black), carbon nanotubes (e.g., graphene sheets formed into single or multilayer coaxial tubular structures, also known as CNTs), and carbon fibers.

作為上述金屬材料,並無特別限制,能夠使用公知的材料。 There are no particular restrictions on the metal materials used; any known materials can be used.

作為金屬材料,例如,可舉出鉻及鎳的含量的合計相對於金屬材料總質 量超過25質量%之金屬材料,其中,30質量%以上為更佳。作為金屬材料中的鉻及鎳的含量的合計的上限值,並無特別限制,但通常係90質量%以下為較佳。 As for metallic materials, examples include those where the combined chromium and nickel content exceeds 25% by mass of the total metallic material, with 30% or more being preferred. There is no particular upper limit to the combined chromium and nickel content in metallic materials, but it is generally preferred to be below 90% by mass.

作為金屬材料,例如,可舉出不鏽鋼及鎳-鉻合金等。 As metallic materials, examples include stainless steel and nickel-chromium alloys.

作為不鏽鋼並無特別限制,能夠使用公知的不鏽鋼。其中,含有8質量%以上的鎳之合金為較佳,含有8質量%以上的鎳之奧氏體系不鏽鋼為更佳。作為奧氏體系不鏽鋼,例如可舉出SUS(Steel Use Stainless:鋼用不鏽鋼)304(Ni含量為8質量%,Cr含量為18質量%)、SUS304L(Ni含量為9質量%,Cr含量為18質量%)、SUS316(Ni含量為10質量%,Cr含量為16質量%)及SUS316L(Ni含量為12質量%,Cr含量為16質量%)等。 There are no particular restrictions on the type of stainless steel used; any known stainless steel can be used. However, alloys containing 8% by mass or more nickel are preferred, and austenitic stainless steels containing 8% by mass or more nickel are even better. Examples of austenitic stainless steels include SUS (Steel Use Stainless) 304 (8% by mass Ni, 18% by mass Cr), SUS304L (9% by mass Ni, 18% by mass Cr), SUS316 (10% by mass Ni, 16% by mass Cr), and SUS316L (12% by mass Ni, 16% by mass Cr).

作為鎳-鉻合金,並無特別限制,能夠使用公知的鎳-鉻合金。其中,鎳含量係40~75質量%,且鉻含量係1~30質量%的鎳-鉻合金為較佳。 There are no particular restrictions on the use of nickel-chromium alloys; any known nickel-chromium alloy can be used. However, nickel-chromium alloys with a nickel content of 40-75% by mass and a chromium content of 1-30% by mass are preferred.

作為鎳-鉻合金,例如,可舉出赫史特合金(產品名稱,以下相同。)、蒙乃爾合金(產品名稱,以下相同)及英高鎳合金(產品名稱,以下相同)等。更具體而言,可舉出赫史特合金C-276(Ni含量為63質量%、Cr含量為16質量%)、赫史特合金-C(Ni含量為60質量%、Cr含量為17質量%)、赫史特合金C-22(Ni含量為61質量%、Cr含量為22質量%)等。 Examples of nickel-chromium alloys include, for instance, Hoechst alloys (product name, hereinafter the same), Monel alloys (product name, hereinafter the same), and IngoNi alloys (product name, hereinafter the same). More specifically, examples include Hoechst alloy C-276 (Ni content 63% by mass, Cr content 16% by mass), Hoechst alloy-C (Ni content 60% by mass, Cr content 17% by mass), and Hoechst alloy C-22 (Ni content 61% by mass, Cr content 22% by mass).

又,除了上述之合金以外,鎳-鉻合金依需要還可以含有硼、矽、鎢、鉬、銅及鈷等。 In addition to the alloys mentioned above, nickel-chromium alloys may also contain boron, silicon, tungsten, molybdenum, copper, and cobalt, depending on the requirements.

作為對金屬材料進行電解研磨之方法並無特別限制,能夠使用公知的方法。例如,能夠使用日本特開2015-227501號公報的[0011]~[0014] 段及日本特開2008-264929號公報的[0036]~[0042]段等中所記載之方法。 There are no particular limitations on the method for electrolytic polishing of metallic materials, and known methods can be used. For example, the methods described in paragraphs [0011] to [0014] of Japanese Patent Application Publication No. 2015-227501 and paragraphs [0036] to [0042] of Japanese Patent Application Publication No. 2008-264929 can be used.

關於金屬材料,推測藉由電解研磨而表面的鈍化層中的鉻的含量變得比母相的鉻的含量多。因此,推測若使用接液部由經電解研磨之金屬材料形成之純化裝置,則含金屬的粒子難以流出到被純化液中。 Regarding metallic materials, it is presumed that the chromium content in the passivation layer formed by electrolytic polishing becomes higher than that in the parent phase. Therefore, it is hypothesized that if a purification device with a wetted section made of electrolytically polished metallic material is used, metal particles would be difficult to flow into the purified solution.

另外,金屬材料亦可以進行拋光。拋光的方法並無特別限制,能夠使用公知的方法。精拋中所使用之研磨粒的尺寸並無特別限制,但是從金屬材料的表面的凹凸容易變得更小之方面而言,#400以下為較佳,1000~#400為更佳,#600~#400為進一步較佳。拋光在電解研磨之前進行為較佳。 In addition, metal materials can also be polished. There are no particular restrictions on the polishing method; well-known methods can be used. There are no particular restrictions on the size of the abrasive grains used in fine polishing, but from the perspective of minimizing surface roughness of the metal material, grits below #400 are preferred, 1000 to #400 are better, and #600 to #400 are even better. Polishing is best performed before electrolytic polishing.

又,金屬材料亦可進行酸處理和/或鈍化處理等。該等處理在電解研磨之後進行為較佳。 Furthermore, metallic materials can also undergo acid treatment and/or passivation. These treatments are preferably performed after electrolytic polishing.

拋光、酸處理及鈍化處理等處理可以單獨進行,亦可以組合2個以上而進行。 Polishing, acid treatment, and passivation can be performed individually or in combination of two or more processes.

<其他步驟> <Other steps>

藥液之製造方法還可以具有除了過濾步驟以外的步驟。作為除了過濾步驟以外的步驟,例如,可舉出蒸餾步驟、反應步驟及除電步驟等。 The manufacturing method of the pharmaceutical solution can also include steps other than filtration. Examples of steps other than filtration include distillation, reaction, and electrostatic removal.

(蒸餾步驟) (Distillation steps)

蒸餾步驟為對含有有機溶劑之被純化物進行蒸餾而獲得經蒸餾之被純化物之步驟。作為對被純化物進行蒸餾之方法,並無特別限制,能夠使用公知的方法。典型地,可舉出在供於過濾步驟之純化裝置的一次側配置蒸餾塔,且將經蒸餾之被純化物導入到製造罐中之方法。 The distillation step is the process of distilling a purified substance containing an organic solvent to obtain a distilled purified substance. There are no particular limitations on the method used to distill the purified substance, and known methods can be used. Typically, a method can be described by arranging a distillation column on the primary side of a purification apparatus for the filtration step, and introducing the distilled purified substance into a manufacturing tank.

此時,作為蒸餾塔的接液部,並無特別限制,但是由已說明之耐腐蝕材料形成為較佳。 At this point, there are no particular restrictions on the receiving section of the distillation tower, but it is preferable to use a corrosion-resistant material as described above.

(反應步驟) (Reaction Steps)

反應步驟為使原料進行反應而產生作為反應物之含有有機溶劑之被純化物之步驟。作為產生被純化物之方法,並無特別限制,能夠使用公知的方法。典型地,可舉出在供於過濾步驟之純化裝置的製造罐(或蒸餾塔)的一次側配置反應槽,且將反應物導入到製造罐(或蒸餾塔)中之方法。 A reaction step is a step in which raw materials react to produce a purified product containing an organic solvent as a reactant. There are no particular limitations on the method for producing the purified product, and known methods can be used. Typically, a method is described where a reaction vessel is arranged on the primary side of a purification apparatus for a filtration step, and the reactants are introduced into the vessel (or distillation column).

此時,作為製造罐的接液部,並無特別限制,但是由已說明之耐腐蝕材料形成為較佳。 At this point, there are no particular restrictions on the material used for the receiving portion of the vessel, but it is preferable to use a corrosion-resistant material as described above.

(除電步驟) (Except for electric steps)

除電步驟為對被純化物進行除電而使被純化物的帶電電位下降之步驟。 The charge removal step is the process of removing charge from the substance being purified, thereby reducing the charged potential of the substance.

作為除電方法並無特別限制,能夠使用公知的除電方法。作為除電方法,例如可舉出使被純化物與導電性材料接觸之方法。 There are no particular limitations on the method of static removal; any known static removal method can be used. For example, a method of static removal could be to bring the purified material into contact with a conductive material.

作為使被純化物與導電性材料接觸之接觸時間係0.001~60秒為較佳,0.001~1秒為更佳,0.01~0.1秒為特佳。作為導電性材料,可舉出不鏽鋼、金、鉑、金剛石及玻璃碳等。 The contact time between the purified material and the conductive material is preferably 0.001 to 60 seconds, more preferably 0.001 to 1 second, and exceptionally preferably 0.01 to 0.1 seconds. Examples of conductive materials include stainless steel, gold, platinum, diamond, and glassy carbon.

作為使被純化物與導電性材料接觸之方法,例如可舉出如下方法等:將由導電性材料形成且經接地之網格(mesh)配置於管路內,並使被純化物在其中通過。 One method for bringing the purified material into contact with the conductive material is, for example, arranging a grounded mesh made of conductive material within a conduit and allowing the purified material to pass through it.

關於被純化物的純化,隨附於其之容器的開封、容器及裝置的清洗、溶液的收容、以及分析等全部在無塵室中進行為較佳。無塵室係在國際標準化組織所規定之國際標準ISO14644-1:2015中規定之等級4以上的清淨度的無塵室為較佳。具體而言,滿足ISO等級1、ISO等級2、ISO等級3及ISO等級4中的任一個為較佳,滿足ISO等級1或ISO等級2為更佳, 滿足ISO等級1為特佳。 Regarding the purification of the substance being purified, it is preferable that all processes, including opening the accompanying containers, cleaning the containers and apparatus, containing the solution, and analysis, be carried out in a cleanroom. The cleanroom should ideally be at least level 4 as specified in the international standard ISO 14644-1:2015, as defined by the International Organization for Standardization (ISO). Specifically, meeting any one of ISO Level 1, ISO Level 2, ISO Level 3, or ISO Level 4 is preferred; meeting ISO Level 1 or ISO Level 2 is even better; and meeting ISO Level 1 is exceptionally good.

作為藥液的保管溫度,並無特別限制,但是在藥液中以少量含有之雜質等難以溶出,其結果,從可獲得更優異之本發明的效果之方面而言,作為保管溫度係4℃以上為較佳。 There are no particular restrictions on the storage temperature of the medicinal solution. However, since small amounts of impurities in the solution are difficult to dissolve, a storage temperature of 4°C or higher is preferable to achieve the superior effects of this invention.

〔容器〕 [Container]

容器中收容有上述藥液。保存或輸送藥液收容體時,藥液收容體中的容器以收容藥液之狀態密閉,以免藥液流出到容器的外部。 The container holds the aforementioned liquid medicine. When storing or transporting the liquid medicine container, the inner container of the liquid medicine container must be sealed to contain the liquid medicine and prevent leakage to the outside of the container.

藥液保管到容器內直至使用為止。使用藥液時,從藥液收容體取出藥液。 Store the liquid medicine in a container until use. When using the medicine, remove it from the container.

作為容器,對於半導體器件製造用途,容器內的清潔度高且雜質的溶出少為較佳。 For semiconductor device manufacturing applications, a high degree of cleanliness and minimal leaching of impurities are preferred when using a container.

作為容器,具體而言,可舉出AICELLO CHEMICAL CO.,LTD.製造之“Clean Bottle”系列及KODAMA PLASTICS CO.,LTD.製造之“Pure Bottle”等,但並不限制於該等。 As containers, examples include AICELLO CHEMICAL CO.,LTD.'s "Clean Bottle" series and KODAMA PLASTICS CO.,LTD.'s "Pure Bottle," but these are not the only examples.

作為容器,以防止向藥液中之雜質混入(污染)為目的而使用將容器內壁設為基於6種樹脂之6層結構之多層瓶或設為基於6種樹脂之7層結構之多層瓶亦為較佳。作為該等容器,例如可舉出日本特開2015-123351號公報中所記載之容器。 As a container, it is preferable to use a multilayer bottle with an inner wall constructed of a six-layer structure based on six resins or a seven-layer structure based on six resins, for the purpose of preventing impurities (contamination) from entering the liquid medicine. For example, the container described in Japanese Patent Application Publication No. 2015-123351 can be cited as such a container.

容器的接液部的至少一部分可以為已經進行說明之耐腐蝕材料(較佳為被電解研磨之不鏽鋼或氟樹脂)或玻璃。從可獲得更優異之本發明的效果之方面而言,接液部的90%以上的面積由上述材料形成為較佳,整個接液部由上述材料形成為更佳。 At least a portion of the wetted portion of the container can be made of a corrosion-resistant material as described above (preferably electrolytically polished stainless steel or fluororesin) or glass. From the perspective of obtaining superior effects of the invention, it is preferable that more than 90% of the wetted portion area is formed of the aforementioned material, and even more preferably, the entire wetted portion is formed of the aforementioned material.

作為容器的較佳樣態之一,可舉出容器的接液部的至少一部分為 被電解研磨之不鏽鋼之樣態。該情況下,容器的接液部的平均表面粗糙度Ra為1500nm以下為較佳,從藥液的缺陷抑制性能更優異且更抑制藥液的帶電之方面而言,小於100nm為較佳,10nm以下為更佳,小於5nm為進一步較佳。另外,容器的接液部的平均表面粗糙度Ra的下限值為1nm以上為較佳。 One preferred embodiment of the container is one in which at least a portion of the liquid-contacting part is made of electrolytically polished stainless steel. In this case, an average surface roughness Ra of the liquid-contacting part of the container is preferably 1500 nm or less; from the perspective of better defect suppression performance and better suppression of drug charge, less than 100 nm is preferred, less than 10 nm is more preferred, and less than 5 nm is even more preferred. Furthermore, a lower limit for the average surface roughness Ra of the liquid-contacting part of the container is preferably 1 nm or more.

其中,容器的接液部的平均表面粗糙度Ra能夠如下測量。首先,用原子力顯微鏡(Atomic Force Microscope:AFM),使用探針直徑10nm的懸臂,測量表面形狀,求出三維資料。其中,將容器的接液部切割成1cm角的尺寸,設置於壓電掃描儀上的水平試樣台,使懸臂與試樣表面接近,到達原子間力所工作之區域,其結果沿XY方向掃描,此時,由Z方向的壓電的變位來捕獲試樣的凹凸,測量時,在表面的5μm×5μm的範圍內測量512×512點。使用上述中求出之三維資料(f(x,y)),求出平均表面粗糙度Ra。 The average surface roughness Ra of the wetted portion of the container can be measured as follows: First, using an atomic force microscope (AFM) with a cantilever of 10 nm probe diameter, the surface shape is measured to obtain three-dimensional data. Specifically, the wetted portion of the container is cut into 1 cm angle pieces and placed on a horizontal sample stage of a piezoelectric scanner. The cantilever is brought close to the sample surface, reaching the region where interatomic forces are active. The results are scanned along the XY directions. The unevenness of the sample is captured by the piezoelectric displacement in the Z direction. During measurement, 512 × 512 points are measured within a 5 μm × 5 μm area on the surface. Using the three-dimensional data (f(x,y)) obtained above, the average surface roughness Ra is calculated.

又,作為容器的較佳樣態之一,可舉出容器的接液部的至少一部分與上述之氟樹脂一同還包含導電性材料之樣態。藉此,更抑制藥液的帶電。導電性材料的具體例與已經進行說明之耐腐蝕材料中的導電性材料相同。 Furthermore, as one preferred embodiment of the container, at least a portion of the liquid-receiving part of the container, along with the aforementioned fluoropolymer resin, may also include a conductive material. This further suppresses the charging of the liquid. Specific examples of the conductive material are the same as those described in the corrosion-resistant materials already explained.

藥液收容體中的容器內的孔隙率為50~99.99體積%為較佳,50~99.90體積%為更佳,80~99體積%為特佳。若孔隙率在上述範圍內,則由於具有適當的空間而容易處理藥液。 The porosity of the container within the drug solution containment body is preferably 50-99.99% by volume, more preferably 50-99.90% by volume, and exceptionally preferably 80-99% by volume. If the porosity is within this range, the drug solution can be easily handled due to the adequate space provided.

另外,上述孔隙率依據下式(X)來進行計算。 Furthermore, the aforementioned porosity is calculated according to the following formula (X).

式(X):孔隙率(體積%)={1-(容器內的藥液的體積/容器的容器體積)}×100 Formula (X): Porosity (volume %) = {1 - (volume of liquid in container / volume of container)} × 100

所謂上述容器體積,與容器的內部容積(容量)的含義相同。 The container volume mentioned above has the same meaning as the internal volume (capacity) of a container.

藥液收容體中的容器的空隙部中存在包含ClogP值高於溶劑的ClogP值的有機化合物(後述的特定有機化合物B)之氣體。 The voids within the container of the liquid contain gas containing an organic compound (specific organic compound B, described later) with a ClogP value higher than that of the solvent.

氣體通常為空氣,但是空氣中的至少一部分被氮氣置換為較佳。若空氣中的至少一部分被氮氣置換,則能夠控制存在於空隙部之有機化合物B的含量,因此可以得到缺陷抑制性能優異之藥液。 The gas is usually air, but it is preferable that at least a portion of the air is replaced by nitrogen. If at least a portion of the air is replaced by nitrogen, the content of organic compound B present in the pores can be controlled, thus yielding a solution with excellent defect suppression performance.

從更發揮本發明的效果之方面而言,氮氣的含量相對於容器的空隙部的總容量為95~99.9999體積%為較佳,97~99.99體積%為更佳。 To maximize the effectiveness of this invention, a nitrogen content of 95-99.9999% of the total volume of the container's voids is preferable, and 97-99.99% is even better.

<特定有機化合物B> <Specific organic compound B>

存在於容器的空隙部之氣體包含特定有機化合物B。特定有機化合物B如上述為藥液中的ClogP值高於溶劑的ClogP值的有機化合物。 The gas present in the pores of the container contains a specific organic compound B. This specific organic compound B, as described above, is an organic compound whose ClogP value in the pharmaceutical solution is higher than that of the solvent.

特定有機化合物B的ClogP值的較佳樣態及具體例與特定有機化合物A相同。 The preferred form and specific examples of the ClogP value for a particular organic compound B are the same as those for a particular organic compound A.

特定有機化合物A與特定有機化合物B的含量的合計相對於藥液的總質量為100,000質量ppt以下,0.1~100,000質量ppt為較佳。 The total content of specific organic compound A and specific organic compound B relative to the total mass of the drug solution should be less than 100,000 ppt, with 0.1 to 100,000 ppt being preferred.

若上述含量的合計為100,000質量ppt以下,則能夠抑制特定有機化合物本身成為缺陷,因此得到缺陷抑制性能優異之藥液。 If the total amount of the above-mentioned components is less than 100,000 ppt by mass, it can inhibit specific organic compounds from becoming defects, thus obtaining a drug solution with excellent defect inhibition performance.

又,若上述含量的合計為0.1質量ppt以上,則藉由特定有機化合物的作用,能夠抑制基於含金屬的粒子之缺陷的產生。該理由的詳細內容雖不明確,但是可推測為藥液中的特定有機化合物抑制含金屬的粒子彼此的聚集或含金屬的粒子殘留於配線基板上。尤其在形成上述之微細圖案時顯著發揮該效果。 Furthermore, if the total content of the above-mentioned substances is 0.1 ppt or more, the generation of defects based on metal-containing particles can be suppressed by the action of specific organic compounds. While the detailed reasoning is unclear, it can be inferred that the specific organic compounds in the solution inhibit the aggregation of metal-containing particles or the retention of metal-containing particles on the wiring substrate. This effect is particularly significant when forming the aforementioned micro-patterns.

從更發揮上述效果之方面考慮,上述含量的合計的上限值為100,000質量ppt以下為較佳,2,000質量ppt以下為更佳,1,000質量ppt以下為進一步較佳,10質量ppt以下為特佳。 To further enhance the aforementioned effects, the upper limit of the total amount of the above-mentioned content is preferably below 100,000 mass ppt, even better below 2,000 mass ppt, further better below 1,000 mass ppt, and exceptionally good below 10 mass ppt.

從更發揮上述效果之方面考慮,上述含量的合計的下限值為0.1質量ppt以上為較佳。 To maximize the aforementioned effects, a lower limit of 0.1 ppt or higher for the total content is preferable.

關於氣體中的特定有機化合物B的含量及種類,能夠使用GCMS(氣相層析質譜分析裝置;gas chromatography mass spectrometry)來測量。 The content and type of a specific organic compound B in a gas can be measured using GCMS (gas chromatography-mass spectrometry).

從缺陷抑制性能更優異之方面考慮,特定有機化合物B的含量相對於藥液的總質量為50,000質量ppt以下為較佳,0.05~50,000質量ppt為更佳,0.05~500質量ppt為進一步較佳,0.05~5質量ppt為特佳。 From the perspective of superior defect suppression performance, the content of a specific organic compound B relative to the total mass of the drug solution is preferably below 50,000 ppt, better is 0.05~50,000 ppt, further better is 0.05~500 ppt, and exceptionally good is 0.05~5 ppt.

特定有機化合物A和特定有機化合物B的含量的合計與含金屬的粒子的含量之質量比例〔(特定有機化合物A+特定有機化合物B)/含金屬的粒子〕為0.01~100,000為較佳,0.1以上為更佳,10,000以下為更佳,1,000以下為特佳。 The mass ratio of the total content of specific organic compound A and specific organic compound B to the content of metal particles [(specific organic compound A + specific organic compound B) / metal particles] is preferably 0.01 to 100,000, more preferably 0.1 or higher, even better 10,000 or lower, and particularly preferred 1,000 or lower.

若上述質量比例為0.01以上,則藉由特定有機化合物的作用,能夠抑制基於含金屬的粒子之缺陷的產生。該理由的詳細內容雖不明確,但是可推測為藥液中的特定有機化合物抑制含金屬的粒子彼此的聚集或含金屬的粒子殘留於配線基板上。尤其在形成上述之微細圖案時顯著發揮該效果。 If the above-mentioned mass ratio is 0.01 or higher, the generation of defects based on metal-containing particles can be suppressed by the action of a specific organic compound. While the detailed reasoning is unclear, it can be inferred that the specific organic compound in the solution inhibits the aggregation of metal-containing particles or their residue on the wiring substrate. This effect is particularly significant when forming the aforementioned micro-patterns.

若上述質量比例為100,000以下,則能夠抑制特定有機化合物本身成為缺陷或產生特定有機化合物與含金屬的粒子的複合粒子,因此可以得到缺陷抑制性能優異之藥液。 If the above mass ratio is 100,000 or less, it can suppress the formation of defects in specific organic compounds or the generation of composite particles of specific organic compounds and metal-containing particles, thus yielding a solution with excellent defect suppression performance.

特定有機化合物A的含量與特定有機化合物B的含量之質量比 例(特定有機化合物A/特定有機化合物B)為1以上為較佳,10以上為更佳,1,000以上為特佳。 The mass ratio (specific organic compound A/specific organic compound B) of 1 or more is preferred, 10 or more is even better, and 1,000 or more is exceptionally preferred.

若上述質量比例為1以上,則經時的缺陷抑制性能(亦即,長期保管藥液收容體之後使用藥液時的缺陷抑制性能)優異。 If the above mass ratio is 1 or higher, the defect suppression performance over time (i.e., the defect suppression performance when using the medicine after long-term storage of the medicine container) is excellent.

上述質量比例的上限值並無特別限定,但是多為10,000以下。 There is no specific upper limit to the above mass ratios, but they are mostly below 10,000.

特定有機化合物B的種類的較佳樣態與上述特定有機化合物A相同,其中,鄰苯二甲酸酯為較佳,選自包括鄰苯二甲酸二辛酯(DOP)及鄰苯二甲酸二異壬酯(DINP)之群組中之至少1種為較佳。 The preferred form of specific organic compound B is the same as that of specific organic compound A described above, wherein phthalate esters are preferred, and preferably selected from at least one of the group consisting of dioctyl phthalate (DOP) and diisononyl phthalate (DINP).

本藥液收容體包含DOP及DINP之情況下,DOP的含量與本藥液收容體中的DINP的含量之質量比例(DOP/DINP)為1以上為較佳,5以上為更佳。DINP的沸點比DOP的沸點更高,因此認為藉由附著於矽基板之情況容易作為缺陷而殘留。然而,若上述質量比例為1以上,則得到缺陷抑制性能更優異之本藥液。 When the solution container contains both DOP and DINP, a mass ratio (DOP/DINP) of 1 or more, preferably 5 or more, of DOP to DINP in the solution container is preferable. DINP has a higher boiling point than DOP, therefore it is considered more likely to remain as a defect when adhering to a silicon substrate. However, a mass ratio of 1 or more results in a solution with superior defect suppression performance.

另外,上述質量比例(DOP/DINP)的上限值並無特別限定,但是10,000以下為較佳,1,000以下為更佳。 Furthermore, there is no particular upper limit to the above-mentioned mass ratio (DOP/DINP), but 10,000 or less is preferred, and 1,000 or less is even better.

[實施例] [Implementation Example]

以下,基於實施例對本發明進行進一步詳細的說明。以下實施例所示之材料、使用量、比例、處理內容及處理步驟等,只要不脫離本發明的主旨便能夠適當地變更。從而,本發明的範圍不應被以下所示之實施例限定地解釋。 The present invention will now be described in further detail based on embodiments. The materials, quantities, proportions, processing contents, and processing steps shown in the following embodiments can be appropriately modified without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be limited to the embodiments shown below.

又,在製備實施例及比較例的藥液時,容器的處理、藥液的製備、填充、保管及分析測量全部在滿足ISO等級2或1之無塵室中進行。為了 提高測量精度,在有機成分的含量的測量及金屬成分的含量的測量中,在通常的測量中為檢測極限以下的成分的測量時,濃縮藥液來進行測量,並將其換算成濃縮前的溶液的濃度而算出了含量。 Furthermore, in the preparation of the pharmaceutical solutions for both the embodiments and comparative examples, the handling of containers, preparation, filling, storage, and analytical measurements of the pharmaceutical solutions were all performed in a cleanroom meeting ISO Class 2 or 1 standards. To improve measurement accuracy, in the measurements of organic and metallic content—specifically, measurements of components below their limits—the pharmaceutical solution was concentrated, and the concentration was calculated by converting the measured content to the concentration of the solution before concentration.

〔藥液〕 [Medicinal Solution]

(過濾器) (Filter)

藥液的純化中所使用之過濾器均使用了利用對市售的PGMEA(丙二醇單甲醚乙酸酯)進行蒸餾純化而成之清洗液來進行了清洗之過濾器。另外,關於浸漬,將含有過濾器之過濾器單元整體浸漬於PGMEA,清洗了所有接液部。又,清洗期間設為1週以上。清洗中,上述PGMEA的液溫維持了30℃。 The filters used in the purification of the pharmaceutical solution were all cleaned with a cleaning solution prepared by distilling and purifying commercially available PGMEA (propylene glycol monomethyl ether acetate). Furthermore, regarding immersion, the entire filter unit containing the filter was immersed in PGMEA to clean all contact points. The immersion period was set to be at least one week. During immersion, the temperature of the PGMEA solution was maintained at 30°C.

作為過濾器,使用了以下過濾器。 The following filters were used as filters.

.UPE:超高分子量聚乙烯製過濾器,Entegris Inc.製造,孔徑為3nm • UPE: Ultra-high molecular weight polyethylene filter, manufactured by Entegris Inc., with a pore size of 3 nm

.PTFE:聚四氟乙烯製過濾器,Entegris Inc.製造,孔徑為10nm • PTFE: Polytetrafluoroethylene filter, manufactured by Entegris Inc., with a pore size of 10 nm

.尼龍:尼龍製過濾器,PALL公司製造,孔徑為5nm • Nylon: Nylon filter, manufactured by PALL, with a pore size of 5nm

.尼龍接枝UPE:尼龍/超高分子量聚乙烯接枝共聚物製過濾器,Entegris Inc.製造,孔徑為3nm • Nylon-grafted UPE: A filter made of nylon/ultra-high molecular weight polyethylene graft copolymer, manufactured by Entegris Inc., with a pore size of 3nm.

.聚醯亞胺:聚醯亞胺製過濾器,Entegris Inc.製造,孔徑為10nm • Polyimide: Polyimide filters, manufactured by Entegris Inc., with a pore size of 10 nm

〔被純化物〕 [Purified substance]

為了製造實施例及比較例的藥液,使用了以下有機溶劑作為被純化物。以下的有機溶劑均使用了市售品。其中,下述“PGMEA/PGME(7:3)”及“PGMEA/PC(9:1)”分別購入混合前的有機溶劑,以規定量相互混合而製得了被純化物。 To manufacture the pharmaceutical solutions of the embodiments and comparative examples, the following organic solvents were used as the purified substances. All of the following organic solvents were commercially available. Specifically, “PGMEA/PGME(7:3)” and “PGMEA/PC(9:1)” were purchased as pre-mixing organic solvents and mixed in prescribed quantities to obtain the purified substances.

.PGMEA:丙二醇單甲醚乙酸酯、ClogP值=0.56) • PGMEA: Propylene glycol monomethyl ether acetate (ClogP value = 0.56)

.CHN:環己酮、ClogP值=0.81 CHN: Cyclohexanone, ClogP value = 0.81

.nBA:乙酸丁酯、ClogP值=1.78 nBA: Butyl acetate, ClogP value = 1.78

.NMP:N-甲基-2-吡咯啶酮、ClogP值=-0.38 NMP: N-methyl-2-pyrrolidone, ClogP value = -0.38

.MIBC:4-甲基-2-戊醇、ClogP值=1.31 MIBC: 4-Methyl-2-pentanol, ClogP value = 1.31

.PGMEA/PGME(7:3):PGMEA與PGME(丙二醇單甲醚、ClogP值=-0.20)的7:3(v/v)混合液 • PGMEA/PGME (7:3): A 7:3 (v/v) mixture of PGMEA and PGME (propylene glycol monomethyl ether, ClogP value = -0.20)

.PGMEA/PC(9:1):PGMEA與PC(碳酸丙二酯、ClogP值=-0.41)的9:1(v/v)混合液 • PGMEA/PC (9:1): A 9:1 (v/v) mixture of PGMEA and PC (propylene carbonate, ClogP value = -0.41)

.iAA:乙酸異戊酯、ClogP值=2.3 • iAA: Isoamyl acetate, ClogP value = 2.3

.EL:乳酸乙酯、ClogP值=0.04 • EL: Ethyl lactate, ClogP value = 0.04

.丙二醇單甲醚、ClogP值=-0.20 Propylene glycol monomethyl ether, ClogP value = -0.20

.丙二醇單丙醚、ClogP值=0.81 Propylene glycol monopropyl ether, ClogP value = 0.81

.甲氧基丙酸甲酯、ClogP值=0.26 Methyl methoxypropionate, ClogP value = 0.26

.環戊酮、ClogP值=0.24 Cyclopentanone, ClogP value = 0.24

.γ-丁內酯、ClogP值=-0.64 γ-Butyrolactone, ClogP value = -0.64

.二異戊醚、ClogP值=3.8 Diisoamyl ether, ClogP value = 3.8

.異丙醇、ClogP值=0.05 Isopropanol, ClogP value = 0.05

.二甲基亞碸、ClogP值=-1.35 Dimethyl monoxide, ClogP value = -1.35

.二乙二醇、ClogP值=-0.95 Diethylene glycol, ClogP value = -0.95

.乙二醇、ClogP值=-0.79 Ethylene glycol, ClogP value = -0.79

.二丙二醇、ClogP值=-0.31 Dipropylene glycol, ClogP value = -0.31

.丙二醇、ClogP值=-0.92 Propylene glycol, ClogP value = -0.92

.碳酸乙二酯、ClogP值=-0.27 Ethylene carbonate, ClogP value = -0.27

.環丁碸、ClogP值=-0.78 Cyclobutrazol, ClogP value = -0.78

.環庚酮、ClogP=1.48 Cycloheptanone, ClogP = 1.48

.2-庚酮、ClogP值=1.91 2-Hepanotone, ClogP value = 1.91

.丁酸丁酯、ClogP值=1.78 Butyl butyrate, ClogP value = 1.78

.異丁酸異丁酯、ClogP值=4.4 Isobutyl isobutyrate, ClogP value = 4.4

.十一烷、ClogP值=6.5 Undecane, ClogP value = 6.5

.丙酸戊酯、ClogP值=2.8 Amyl propionate, ClogP value = 2.8

.丙酸異戊酯、ClogP值=2.70 Isoamyl propionate, ClogP value = 2.70

.乙基環己烷、ClogP值=4.4 Ethylcyclohexane, ClogP value = 4.4

.均三甲苯、ClogP值=3.6 Mesitylene, ClogP value = 3.6

.癸烷、ClogP值=6.0 Decane, ClogP value = 6.0

〔純化處理〕 [Purification Treatment]

對選自上述被純化物之1種進行蒸餾,進而將經蒸餾純化之被純化物通液到實施了上述清洗之過濾器中1次以上並進行了純化。 One of the above-mentioned substances to be purified was distilled, and the purified substance was then passed through a filter that had undergone the above-mentioned cleaning process at least once for further purification.

另外,一系列的純化的過程中,轉移被純化物及藥液之配管使用了接液部被電解研磨之不鏽鋼製的配管或未進行電解研磨之不鏽鋼製的配管。 Furthermore, during the series of purification processes, the piping used to transfer the purified substance and the chemical solution employed either stainless steel piping with electrolytically polished wetted surfaces or stainless steel piping that had not undergone electrolytic polishing.

適當變更被純化物的種類、過濾器的種類、過濾器的清洗期間、通液的次數、配管的種類及配管的長度(基於配管之轉移的距離),分別製得了表1及表2中所示之藥液。 By appropriately varying the type of purified substance, the type of filter, the filter cleaning period, the number of flushing cycles, the type of piping, and the length of the piping (based on the distance of piping transfer), the drug solutions shown in Tables 1 and 2 were prepared.

〔容器〕 [Container]

作為收納藥液之容器,使用了接液部的材質為表1或表2中所記載之材質之容器。 As containers for storing liquid medicine, containers with the liquid-receiving parts made of materials listed in Table 1 or Table 2 were used.

.PFA:全氟烷氧基烷烴 PFA: Perfluoroalkoxyalkylene hydrocarbons

.PTFE:聚四氟乙烯 PTFE: Polytetrafluoroethylene

.SUS316L-EP:奧氏體系不鏽鋼(進行了電解研磨) SUS316L-EP: Austenitic stainless steel (electrolytic polishing performed)

.HDPE:高密度聚乙烯 HDPE: High-density polyethylene

.SUS304-EP:奧氏體系不鏽鋼(進行了電解研磨) SUS304-EP: Austenitic stainless steel (electrolytic polishing performed)

.SUS304:奧氏體系不鏽鋼(未進行電解研磨) SUS304: Austenitic stainless steel (not electrolytically polished)

.玻璃 .Glass

.PTFE及CNT:包含聚四氟乙烯及奈米碳管之材質 • PTFE and CNT: Materials containing polytetrafluoroethylene and carbon nanotubes

.PTFE及碳粒子:包含聚四氟乙烯及碳粒子之材質 • PTFE and carbon particles: Materials containing polytetrafluoroethylene and carbon particles

.PTFE及碳纖維:包含聚四氟乙烯及碳纖維之材質 • PTFE and carbon fiber: Materials containing polytetrafluoroethylene and carbon fiber

另外,關於表2中的一部分的實施例,作為SUS316L-EP,使用了在電解研磨的前處理進行了拋光(研磨粒的尺寸:#400)和/或在電解研磨的後處理進行了酸處理(藉由7質量%硝酸稀釋液清洗接液部)者。 Additionally, regarding some embodiments in Table 2, such as SUS316L-EP, polishing (grit size: #400) was performed as a pretreatment before electropolishing and/or acid treatment (cleaning the contact area with a 7% nitric acid dilution) was performed as a posttreatment after electropolishing.

又,關於表2中所示之容器,藉由上述之方法測量了容器的接液部的平均表面粗糙度Ra。 Furthermore, regarding the containers shown in Table 2, the average surface roughness Ra of the liquid-contacting portion of the containers was measured using the method described above.

首先,在1,000L的容量的真空乾燥器內設置容器,關於真空乾燥器、容器的接液部、用於使藥液流入容器內之配管等具有與藥液接觸之可能性之構件,用半導體等級過氧化氫水進行了清洗之後,將真空乾燥器內的空氣置換成氮氣而進行了乾燥。 First, a container was placed inside a 1,000L vacuum dryer. All components that might come into contact with the liquid, including the vacuum dryer, the container's receiving portion, and the piping used to allow the liquid to flow into the container, were cleaned with semiconductor-grade hydrogen peroxide solution. Then, the air inside the vacuum dryer was replaced with nitrogen for drying.

接著,使真空乾燥器內成為真空狀態之後,反覆進行填充氮氣之類的處 理,使真空乾燥器內的環境成為清潔的狀態。 Next, after creating a vacuum state inside the vacuum dryer, repeated processes such as filling with nitrogen are performed to ensure a clean environment inside the dryer.

〔藥液收容體〕 [Drug Containment Container]

以容器的孔隙率成為表1及表2所示之值的方式,在設置於如上述成為清潔的狀態之真空乾燥器內之容器中,收容了如上述那樣純化而成之藥液。而且,密閉容器,以免藥液流出容器內,從而得到了藥液收容體。 The purified medicinal liquid, as described above, was contained in a container placed inside a vacuum dryer in a clean state, with the container porosity set as shown in Tables 1 and 2. Furthermore, the container was sealed to prevent the medicinal liquid from leaking out, thus obtaining a medicinal liquid container.

〔藥液收容體中的各成分的含量等的測量〕 [Measurement of the content of various components in the drug solution container]

藥液收容體中的各成分的含量等的測量中使用了以下的方法。另外,在均滿足ISO(國際標準化機構)等級2以下之等級的無塵室中進行了以下的測量。為了提高測量精度,在各成分的測量中,在通常的測量中為檢測極限以下之情況下,以體積換算濃縮成100分之1而進行測量,並將其換算成濃縮前的有機溶劑的含量而算出了含量。結果一併示於表1及表2中。 The following method was used to measure the content of each component in the liquid solution container. Furthermore, the following measurements were performed in a cleanroom that met ISO (International Organization for Standardization) level 2 or lower. To improve measurement accuracy, for each component, measurements were performed below the detection limit under normal conditions, by converting the volume to 1/100th concentration, and then converting this to the content of organic solvent before concentration to calculate the content. The results are shown in Tables 1 and 2.

另外,關於藥液收容體中的各成分的含量等的測量,在剛製造之後(係指將藥液收容於容器,且剛密閉藥液之後。)實施。 Furthermore, measurements of the content of each component within the liquid medicine container are performed immediately after manufacturing (meaning immediately after the liquid medicine is contained in the container and immediately sealed).

〔有機化合物〕 [Organic compounds]

關於各藥液中的ClogP值高於有機溶劑的ClogP值的有機化合物(特定有機化合物A)的含量,使用氣相層析質譜分析裝置(產品名“GCMS-2020”,Shimadzu Corporation製造,測量條件如下)進行了測量。 The content of organic compounds (specific organic compound A) in each drug solution whose ClogP value was higher than that of the organic solvent was measured using a gas chromatography-mass spectrometry (GCMS-2020, manufactured by Shimadzu Corporation, measurement conditions as follows).

又,針對存在於藥液收容體的空隙部之氣體中所包含之ClogP值高於有機溶劑的ClogP值的有機化合物(特定有機化合物B)的含量,亦使用上述氣相層析質譜分析裝置進行了測量。 Furthermore, the content of organic compounds (specific organic compound B) with ClogP values higher than those of the organic solvent, contained in the gas within the pores of the drug solution container, was also measured using the aforementioned gas chromatography-mass spectrometry analysis apparatus.

<測量條件> <Measurement Conditions>

毛細管柱:InertCap 5MS/NP 0.25mmI.D.×30m df=0.25μm Capillary column: InertCap 5MS/NP 0.25mm I.D. × 30m df = 0.25μm

試樣導入法:分流75kPa壓力恆定 Sample introduction method: constant pressure at 75 kPa during shunt flow

氣化室溫度:230℃ Vaporization chamber temperature: 230℃

管柱烘箱溫度:80℃(2min)-500℃(13min)升溫速度15℃/min Column oven temperature: 80℃ (2 min) - 500℃ (13 min) Heating rate: 15℃/min

載氣:氦氣 Carrier gas: Helium

隔墊吹掃流量:5mL/min Spacing pad purging flow rate: 5 mL/min

分流比:25:1 Flow split ratio: 25:1

介面溫度:250℃ Interface temperature: 250℃

離子源溫度:200℃ Ion source temperature: 200℃

測量模式:Scan m/z=85~500 Measurement mode: Scan m/z = 85~500

試樣導入量:1μL Sample volume: 1 μL

依據如上述那樣測量之藥液中的特定有機化合物A的含量(濃度)、氣體中的特定有機化合物B的含量(濃度),算出了藥液收容體中的特定有機化合物A的質量及藥液收容體中的特定有機化合物B的質量。 Based on the measured concentrations of specific organic compound A in the liquid and specific organic compound B in the gas, as described above, the mass of specific organic compound A and the mass of specific organic compound B in the liquid container were calculated.

而且,算出藥液收容體中的特定有機化合物A的質量與藥液收容體中的藥液的質量之比例(亦即,係指“相對於藥液的總質量之特定有機化合物A的含量(質量ppm)”。),在表1及表2中的“特定有機化合物A的含量”的欄中示出了數值。 Furthermore, the ratio of the mass of a specific organic compound A in the drug solution container to the mass of the drug solution in the drug solution container (i.e., the "content of specific organic compound A relative to the total mass of the drug solution (mass ppm)") was calculated, and the values are shown in the "Content of Specific Organic Compound A" column in Tables 1 and 2.

同樣地,算出藥液收容體中的特定有機化合物B的質量與藥液收容體中的藥液的質量之比例(亦即,係指“相對於藥液的總質量之特定有機化合物B的含量(質量ppm)”。),在表1及表2中的“特定有機化合物B的含量”的欄中示出了數值。 Similarly, the ratio of the mass of a specific organic compound B in the drug solution container to the mass of the drug solution in the drug solution container was calculated (i.e., the "content of the specific organic compound B relative to the total mass of the drug solution (mass ppm)"). The values are shown in the "Content of Specific Organic Compound B" column in Tables 1 and 2.

另外,表1及表2中的“特定有機化合物A和特定有機化合物B的合 計含量”為表1及表2中的“特定有機化合物A的含量”和“特定有機化合物B的含量”的合計。 Furthermore, the "Total Content of Specific Organic Compound A and Specific Organic Compound B" in Tables 1 and 2 is the sum of the "Content of Specific Organic Compound A" and the "Content of Specific Organic Compound B" in Tables 1 and 2.

又,同樣地,求出了相對於藥液的總質量之特定有機化合物A中的ClogP值為6以上的特定有機化合物A1和特定有機化合物B中的ClogP值為6以上的特定有機化合物B1的含量的合計(質量ppt)。將結果示於表1及表2的“ClogP值6以上的特定有機化合物的總量”的欄中。 Similarly, the total content (mass ppt) of specific organic compounds A1 with a ClogP value of 6 or higher in specific organic compound A and specific organic compound B1 with a ClogP value of 6 or higher in specific organic compound B relative to the total mass of the drug solution was calculated. The results are shown in the "Total amount of specific organic compounds with a ClogP value of 6 or higher" column of Tables 1 and 2.

又,同樣地,求出了相對於藥液的總質量之特定有機化合物A中的鄰苯二甲酸酯和特定有機化合物B中的鄰苯二甲酸酯的含量的合計(質量ppt)。將結果示於表1及表2的“鄰苯二甲酸酯的總量”的欄中。 Similarly, the total content (mass ppt) of phthalates in specific organic compound A and specific organic compound B relative to the total mass of the drug solution was determined. The results are shown in the "Total Phthalate Content" column of Tables 1 and 2.

又,同樣地,求出了相對於藥液的總質量之特定有機化合物A中的鄰苯二甲酸二辛酯(DOP)及鄰苯二甲酸二異壬酯(DINP)和特定有機化合物B中的DOP及DINP的含量的合計(質量ppt)。將結果示於表1及表2的“DINP及DOP”的欄的“合計含量(質量ppt)”。 Similarly, the total content (mass ppt) of dioctyl phthalate (DOP) and diisononyl phthalate (DINP) in specific organic compound A and the total content (mass ppt) of DOP and DINP in specific organic compound B relative to the total mass of the drug solution were determined. The results are shown in the "Total Content (mass ppt)" column of "DINP and DOP" in Tables 1 and 2.

又,算出了藥液收容體中的特定有機化合物B的含量(質量)與藥液收容體中的特定有機化合物A的含量(質量)之質量比例。將結果示於表1及表2的“特定有機化合物A與特定有機化合物B之質量比”的欄中。 Furthermore, the mass ratio of the content (mass) of specific organic compound B in the drug solution container to the content (mass) of specific organic compound A in the drug solution container was calculated. The results are shown in the "Mass ratio of specific organic compound A to specific organic compound B" column of Tables 1 and 2.

又,算出了藥液收容體中的DOP的含量(質量)與藥液收容體中的DINP的含量(質量)之質量比例。將結果示於表1及表2的“DINP及DOP”的欄的“含有比DOP/DINP”。 Furthermore, the mass ratio of DOP content (by mass) to DINP content (by mass) in the drug solution container was calculated. The results are shown in the "DOP/DINP content" column of Tables 1 and 2.

〔含金屬的粒子〕 [Particles containing metal]

藥液中的含金屬的粒子的含量藉由使用SP-ICP-MS之方法進行了測量。 The content of metal particles in the drug solution was measured using SP-ICP-MS.

使用裝置如下。將結果示於表1及表2中。 The following devices were used. The results are shown in Tables 1 and 2.

˙製造商:PerkinElmer Co.,Ltd. Manufacturer: PerkinElmer Co., Ltd.

˙型號:NexION350S Model: NexION350S

在解析中使用了以下解析軟體。 The following parsing software was used in the parsing process.

˙“SP-ICP-MS”專用Syngistix奈米應用模組 • “SP-ICP-MS” Dedicated Syngistix Nano Application Module

又,算出了藥液收容體中的特定有機化合物A和特定有機化合物B的合計含量與藥液中的含金屬的粒子的含量(質量)之質量比例。將結果示於表1及表2的“含金屬的粒子與特定有機化合物的含有比”的欄中。 Furthermore, the mass ratio of the total content of specific organic compound A and specific organic compound B in the drug solution container to the mass content (mass) of metal-containing particles in the drug solution was calculated. The results are shown in the "Ratio of Metal-Containing Particles to Specific Organic Compounds" column of Tables 1 and 2.

〔金屬奈米粒子〕 [Metal nanoparticles]

對藥液中的金屬奈米粒子(粒徑0.5~17nm的含金屬的粒子)的含粒子的數量,藉由以下的方法進行了測量。 The number of metal nanoparticles (metal-containing particles with a diameter of 0.5–17 nm) in the drug solution was measured using the following method.

首先,在矽基板上塗佈一定量的藥液來形成附藥液層的基板,藉由雷射光對附藥液層的基板的表面進行掃描,檢測了散射光。藉此,確定了存在於附藥液層的基板的表面之缺陷的位置及粒徑。接著,以其缺陷的位置為基準藉由EDX(能量分散型X射線)分析法進行元素分析,並檢查了缺陷的組成。藉由該方法,求出金屬奈米粒子在基板上的粒子數量,將其換算成每單位體積的藥液中含粒子的數量(個/cm3)。 First, a certain amount of reagent was coated onto a silicon substrate to form a reagent-coated substrate. The surface of the reagent-coated substrate was scanned with laser light, and the scattered light was detected. This determined the location and particle size of defects on the surface of the reagent-coated substrate. Next, elemental analysis was performed using EDX (Energy Dispersive X-ray) analysis based on the location of these defects to examine their composition. Using this method, the number of metal nanoparticles on the substrate was determined and converted into the number of particles per unit volume of reagent (particles/ cm³ ).

另外,分析中組合使用了KLA-Tencor Corporation製造的晶圓檢查裝置“SP-5”與Applied Materials公司的全自動缺陷檢查分類裝置“SEMVision G6”。 In addition, the analysis combined the use of the KLA-Tencor Corporation's SP-5 wafer inspection system and the Applied Materials SEMVision G6 fully automated defect inspection and classification system.

又,關於利用測量裝置的分辨力等無法檢測所期望的粒徑的粒子之試樣,使用日本特開2009-188333號公報的0015~0067段中所記載之方法進行了檢測。亦即,藉由CVD(化學氣相沉積)法在基板上形成SiOX層,接著,以覆蓋上述層上之方式形成了藥液層。接著,使用了如下方法,亦即, 對具有上述SiOX層與塗佈於其上之藥液層之複合層進行乾式蝕刻,向所得到之突起物進行光照射,並檢測散射光,從上述散射光計算突起物的體積,並從上述突起物的體積計算粒子的粒徑。 Furthermore, for samples where the desired particle size cannot be detected using the resolution of the measuring device, the method described in paragraphs 0015 to 0067 of Japanese Patent Application Publication No. 2009-188333 was used for detection. Specifically, a SiO₂ layer was formed on a substrate using CVD (chemical vapor deposition), and then a liquid coating was formed over the aforementioned layer. Next, a method was used in which the composite layer having the SiO₂ layer and the liquid coating thereon was dry-etched, the resulting protrusion was irradiated with light, the scattered light was detected, the volume of the protrusion was calculated from the scattered light, and the particle size was calculated from the volume of the protrusion.

〔缺陷抑制性能的評價〕 [Evaluation of Defect Suppression Performance]

從藥液收容體取出藥液,將其用作預濕液,對缺陷抑制性能進行了評價。 The drug solution was removed from its container and used as a pre-humidifying solution to evaluate its defect suppression performance.

其中,關於缺陷抑制性能,使用了剛製造藥液收容體之後(係指將藥液收容於容器並剛密閉藥液。另外,表中示為“剛收容之後”。)的藥液之情況及使用了在50℃下保管藥液收容體1年之後(表中,示為“經時”。)的藥液之情況該兩者實施了評價。 Regarding defect suppression performance, evaluations were conducted using both solutions immediately after manufacturing the drug container (meaning the drug was contained in the container and immediately sealed; indicated as "immediately after containment" in the table) and solutions stored at 50°C for one year (indicated as "after time" in the table).

另外,所使用之光阻組成物如下。 In addition, the photoresist components used are as follows.

〔光阻組成物1〕 [Photoresist Component 1]

將各成分以以下的組成進行混合而得到了光阻組成物1。 The photoresist composition 1 was obtained by mixing the various components in the following configuration.

˙樹脂(A-1):0.77g Resin (A-1): 0.77g

˙酸產生劑(B-1):0.03g Acid-producing agent (B-1): 0.03g

˙鹼性化合物(E-3):0.03g Alkaline compound (E-3): 0.03g

˙PGMEA:67.5g ˙PGMEA: 67.5g

˙EL:75g ˙EL:75g

<樹脂(A)等> <Resin (A), etc.>

(合成例1)樹脂(A-1)的合成 (Synthetic Example 1) Synthesis of Resin (A-1)

向2L燒瓶中加入環己酮600g,以100mL/min的流量進行了1小時的氮氣置換。之後,加入聚合起始劑V-601(Wako Pure Chemical Industries,Ltd.製造)4.60g(0.02mol),升溫至內溫成為80℃為止。接著,將以下的單體 及聚合起始劑V-601(Wako Pure Chemical Industries,Ltd.製造)4.60g(0.02mol)溶解於環己酮200g中,製備了單體溶液。向加熱到上述80℃之燒瓶中經6小時滴加了單體溶液。滴加結束之後,進而在80℃下反應了2小時。 600 g of cyclohexanone was added to a 2 L flask, and nitrogen purging was performed for 1 hour at a flow rate of 100 mL/min. Then, 4.60 g (0.02 mol) of polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) was added, and the temperature was raised to 80 °C. Next, the monomer and 4.60 g (0.02 mol) of polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) were dissolved in 200 g of cyclohexanone to prepare a monomer solution. The monomer solution was added dropwise to the flask heated to 80 °C over 6 hours. After the dropwise addition was completed, the reaction was carried out at 80 °C for another 2 hours.

4-乙醯氧基苯乙烯 48.66g(0.3mol) 4-Ethyloxystyrene 48.66 g (0.3 mol)

1-乙基環戊基甲基丙烯酸酯 109.4g(0.6mol) 1-Ethylcyclopentyl methacrylate 109.4 g (0.6 mol)

單體1 22.2g(0.1mol) Monomer 1: 22.2 g (0.1 mol)

將反應溶液冷卻至室溫,滴加到己烷3L中而使聚合物沉澱。將經過濾之固體溶解於丙酮500mL中,再次滴加到己烷3L中,對經過濾之固體進行減壓乾燥,得到了4-乙醯氧基苯乙烯/1-乙基環戊基甲基丙烯酸酯/單體1共聚物(A-1)160g。 The reaction solution was cooled to room temperature and added dropwise to 3 L of hexane to precipitate the polymer. The filtered solid was dissolved in 500 mL of acetone and added dropwise again to 3 L of hexane. The filtered solid was then dried under reduced pressure to obtain 160 g of 4-acetylated styrene/1-ethylcyclopentyl methacrylate/monomer 1 copolymer (A-1).

向反應容器中加入上述中所得到之聚合物10g、甲醇40mL、1-甲氧基-2-丙醇200mL及濃鹽酸1.5mL,加熱到80℃進行了5小時的攪拌。將反應溶液放冷到室溫,滴加到蒸餾水3L中。將經過濾之固體溶解於丙酮200mL中,再次滴加到蒸餾水3L中,對經過濾之固體進行減壓乾燥,得到了樹脂(A-1)(8.5g)。基於凝膠滲透層析法(GPC)(溶劑:THF(tetrahydrofuran))之標準聚苯乙烯換算的重量平均分子量(Mw)為11200, 分子量分散度(Mw/Mn)為1.45。將樹脂A-1的結構等示於以下。 10 g of the polymer obtained above, 40 mL of methanol, 200 mL of 1-methoxy-2-propanol, and 1.5 mL of concentrated hydrochloric acid were added to a reaction vessel, and the mixture was heated to 80 °C and stirred for 5 hours. The reaction solution was cooled to room temperature and added dropwise to 3 L of distilled water. The filtered solid was dissolved in 200 mL of acetone and added dropwise again to 3 L of distilled water. The filtered solid was then dried under reduced pressure to obtain resin (A-1) (8.5 g). The weight-average molecular weight (Mw) of standard polystyrene, converted from standard polystyrene by gel osmosis chromatography (GPC) (solvent: THF (tetrahydrofuran)), was 11200, and the molecular weight dispersion (Mw/Mn) was 1.45. The structure of resin A-1 is shown below.

<光酸產生劑(B)> <Photosensitive Acid Generator (B)>

作為光酸產生劑,使用了以下者。 The following were used as photosensitive acid generators.

<鹼性化合物(E)> <Alkaline Compounds (E)>

作為鹼性化合物,使用了以下者。 The following were used as alkaline compounds.

[化學式15] [Chemical Formula 15]

(殘渣缺陷抑制性能、橋接缺陷抑制性能及色斑缺陷抑制性能) (Residue defect suppression performance, bridging defect suppression performance, and stain defect suppression performance)

藉由以下的方法,對藥液的殘渣缺陷抑制性能、橋接缺陷抑制性能及色斑缺陷抑制性能進行了評價。另外,試驗中使用了Tokyo Electron Limited製塗佈/顯影機“LITHIUS(註冊商標)Pro Z”。 The residue defect suppression performance, bridging defect suppression performance, and stain defect suppression performance of the coating solution were evaluated using the following methods. Additionally, the Tokyo Electron Limited coating/developing machine "LITHIUS (registered trademark) Pro Z" was used in the experiment.

首先,在矽晶圓上塗佈AL412(BREWER SCIENCE,INC.製造),在200℃下進行60秒鐘的烘烤,形成了膜厚20nm的光阻下層膜。在其上塗佈預濕液(藥液1),從其上塗佈光阻組成物1,在100℃下進行60秒鐘烘烤(PB:Prebake),形成了膜厚30nm的光阻膜。 First, AL412 (manufactured by BREWER SCIENCE, INC.) was coated on a silicon wafer and baked at 200°C for 60 seconds to form a 20nm thick photoresist lower layer. A pre-wetting solution (solution 1) was then coated on top, followed by photoresist composition 1, and baked at 100°C for 60 seconds (PB: Prebake) to form a 30nm thick photoresist film.

使用EUV曝光機(ASML公司製造;NXE3350、NA0.33、Dipole 90°、外西格瑪0.87、內西格瑪0.35),經由間隙為20nm且圖案寬度為15nm的反射型遮罩對該光阻膜進行了曝光。然後,在85℃下加熱(PEB:Post Exposure Bake)了60秒鐘。接著,在有機溶劑系的顯影液中顯影30秒鐘,並沖洗了20秒鐘。接著,以2000rpm的轉速旋轉晶圓40秒鐘,藉此形成了間隙為20nm且圖案線寬為15nm的線與空間的圖案。 The photoresist film was exposed using an EUV exposure machine (ASML NXE3350, NA 0.33, Dipole 90°, outer sigma 0.87, inner sigma 0.35) through a reflective mask with a 20nm gap and a pattern width of 15nm. It was then heated at 85°C (Post Exposure Bake) for 60 seconds. Next, it was developed in an organic solvent-based developer for 30 seconds and rinsed for 20 seconds. Finally, the wafer was rotated at 2000 rpm for 40 seconds, thereby forming a line and space pattern with a 20nm gap and a 15nm linewidth.

獲取上述圖案的圖像,組合使用KLA-Tencor Corporation製造的晶圓檢查裝置“SP-5”及Applied Materials公司的全自動缺陷檢查分類裝置“SEMVision G6”,對所得到之圖像進行解析,測量了每單位面積的未曝光部 中的殘渣數量。 Images of the aforementioned pattern were acquired and analyzed using a combination of the KLA-Tencor Corporation's SP-5 wafer inspection system and Applied Materials' SEMVision G6 fully automated defect inspection and classification system. The amount of residue per unit area of unexposed area was measured.

另外,關於利用測量裝置的分辨力等無法檢測所期望的粒徑的粒子之試樣,使用日本特開2009-188333號公報的0015~0067段中所記載之方法進行了檢測。亦即,藉由CVD(化學氣相沉積)法在基板上形成SiOX層,接著,以覆蓋上述層上之方式形成了藥液層。接著,使用了如下方法,亦即,對具有上述SiOX層與塗佈於其上之藥液層之複合層進行乾式蝕刻,向所得到之突起物進行光照射,並檢測散射光,從上述散射光計算突起物的體積,並從上述突起物的體積計算粒子的粒徑。 Furthermore, for samples where the desired particle size cannot be detected using the resolution of the measuring device, the method described in paragraphs 0015 to 0067 of Japanese Patent Application Publication No. 2009-188333 was used for detection. Specifically, a SiO₂ layer was formed on a substrate using CVD (chemical vapor deposition), and then a liquid coating was formed over the aforementioned layer. Next, a method was used in which the composite layer having the SiO₂ layer and the liquid coating thereon was dry-etched, the resulting protrusion was irradiated with light, the scattered light was detected, the volume of the protrusion was calculated from the scattered light, and the particle size was calculated from the volume of the protrusion.

藉由以下的基準進行評價,結果示於表1及表2中。 The evaluation was conducted using the following criteria, and the results are shown in Tables 1 and 2.

A:缺陷數量小於60個。 A: The number of defects is less than 60.

B:缺陷數量為60個以上且小於90個。 B: The number of defects is more than 60 but less than 90.

C:缺陷數量為90個以上且小於120個。 C: The number of defects is more than 90 but less than 120.

D:缺陷數量為120個以上且小於150個。 D: The number of defects is more than 120 but less than 150.

E:缺陷數量為150個以上且小於180個。 E: The number of defects is more than 150 but less than 180.

(帶電量) (Charged)

關於剛填充藥液之後的液面帶電量,使用KASUGA DENKI,Inc.製數字靜電電位測量器KSD-2000進行了測量。藉由以下的基準進行了評價,結果示於表2中。 The electrical charge on the liquid surface immediately after filling with the solution was measured using a KASUGA DENKI, Inc. KSD-2000 digital electrostatic potential meter. The results were evaluated using the following criteria and are shown in Table 2.

A:帶電量在±2kV的範圍內。 A: The voltage is within ±2kV.

B:帶電量在±2kV的範圍外,且在±10kV的範圍內。 B: The voltage level is outside the ±2kV range but within the ±10kV range.

C:帶電量在±10kV的範圍外。 C: The voltage level is outside the ±10kV range.

上述表1及表2中,“金屬奈米粒子的含粒子的數量”的欄中所記載之數值為縮寫指數顯示者,例如,“1.00E+05”係指“1.00×105”。 In Tables 1 and 2 above, the values recorded in the column “Number of metal nanoparticles” are abbreviated exponents. For example, “1.00E+05” means “1.00× 10⁵ ”.

如表1及表2所示,若含金屬的粒子的含量相對於藥液的總質量為10質量ppt以下且特定有機化合物A和特定有機化合物B的含量的合計相對於藥液的總質量為100,000質量ppt以下,則即使使用剛收容於藥液收 容體之後及長期保管之後的任一時序中取出之藥液,缺陷抑制性能亦優異(實施例)。 As shown in Tables 1 and 2, if the content of metal particles relative to the total mass of the drug solution is 10 ppt or less, and the combined content of specific organic compound A and specific organic compound B relative to the total mass of the drug solution is 100,000 ppt or less, then the defect suppression performance is excellent even when using the drug solution taken out at any time after it has been contained in the drug solution container or after long-term storage (Example).

又,從實施例1及2與實施例7的對比示出,若含金屬的粒子的含量相對於藥液的總質量在0.1~10質量ppt的範圍內(實施例1及2),則即使使用剛收容於藥液收容體之後及長期保管後的任一時序中取出之藥液,缺陷抑制性能亦更優異。 Furthermore, a comparison between Examples 1 and 2 and Example 7 shows that if the content of metal particles relative to the total mass of the liquid is within the range of 0.1 to 10 ppt (Examples 1 and 2), the defect suppression performance is superior even when the liquid is taken out at any time after being contained in the liquid container or after long-term storage.

又,從實施例3與實施例19的對比示出,若含金屬的粒子的含量相對於藥液的總質量為1質量ppt以下(實施例19),則即使使用剛收容於藥液收容體之後及長期保管後的任一時序中取出之藥液,缺陷抑制性能亦更優異。 Furthermore, a comparison between Embodiment 3 and Embodiment 19 shows that if the content of metal particles relative to the total mass of the liquid is less than 1 ppt (Embodiment 19), the defect suppression performance is superior even when the liquid is taken out at any time after being contained in the liquid container or after long-term storage.

又,從實施例4與實施例19的對比示出,若特定有機化合物A和特定有機化合物B的含量的合計相對於藥液的總質量為2,000質量ppt以下(實施例19),則即使使用剛收容於藥液收容體之後及長期保管後的任一時序中取出之藥液,缺陷抑制性能更優異。 Furthermore, a comparison between Embodiment 4 and Embodiment 19 shows that if the total content of specific organic compound A and specific organic compound B is less than 2,000 mass ppt relative to the total mass of the drug solution (Embodiment 19), then the defect suppression performance is superior, even when the drug solution is taken out at any time after being contained in the drug solution container or after long-term storage.

又,從實施例5與實施例19的對比示出,若特定有機化合物A和特定有機化合物B的含量的合計與含金屬的粒子的含量之質量比例為0.1以上(實施例19),則使用剛收容於藥液收容體之後及長期保管後的至少其中一個時序中取出之藥液之情況下,缺陷抑制性能更優異。 Furthermore, a comparison between Embodiment 5 and Embodiment 19 shows that if the mass ratio of the total content of specific organic compound A and specific organic compound B to the content of metal particles is 0.1 or more (Embodiment 19), then the defect suppression performance is superior when using the drug solution taken out at least once after being contained in the drug solution container and after long-term storage.

又,從實施例6與實施例19的對比示出,若特定有機化合物A和特定有機化合物B的含量的合計與含金屬的粒子的含量之質量比例為100,000以下(實施例19),則即使使用剛收容於藥液收容體之後及長期保管後的任一時序中取出之藥液,缺陷抑制性能亦優異。 Furthermore, a comparison between Embodiment 6 and Embodiment 19 shows that if the mass ratio of the total content of specific organic compound A and specific organic compound B to the content of metal particles is 100,000 or less (Embodiment 19), then the defect suppression performance is excellent even when the drug solution is used at any time after being contained in the drug solution container or after long-term storage.

又,從實施例8與實施例11的對比示出,若特定有機化合物B與特定有機化合物A之質量比例為1以上(實施例11),則長期保管後取出之藥液的缺陷抑制性能更優異。 Furthermore, a comparison between Embodiment 8 and Embodiment 11 shows that if the mass ratio of a specific organic compound B to a specific organic compound A is 1 or more (Embodiment 11), the defect suppression performance of the drug solution after long-term storage is superior.

又,從實施例9~12的對比示出,若藥液收容體中的容器的孔隙率在50~99.99體積%的範圍內(實施例9及11),則長期保管後取出之藥液的缺陷抑制性能更優異。 Furthermore, the comparison in Examples 9-12 shows that if the porosity of the container in the liquid medicine container is within the range of 50-99.99% by volume (Examples 9 and 11), the defect suppression performance of the liquid medicine after long-term storage is superior.

從實施例15與實施例16的對比示出,若鄰苯二甲酸二辛酯的含量與鄰苯二甲酸二異壬酯的含量之質量比例(DOP/DINP)為1以上(實施例15),則使用長期保管於藥液收容體之後取出之藥液之情況下,缺陷抑制性能更優異。 A comparison between Examples 15 and 16 shows that if the mass ratio (DOP/DINP) of dioctyl phthalate to diisononyl phthalate is 1 or more (Example 15), the defect suppression performance is superior when the drug solution is removed after long-term storage in the drug solution container.

如表2所示,從實施例102~實施例106的對比,若容器的接液部為被電解研磨之不鏽鋼之情況且容器的接液部的平均表面粗糙度Ra小於100nm,則缺陷抑制性能更優異(實施例102)。 As shown in Table 2, comparing Examples 102 to 106, if the liquid-contacting part of the container is made of electrolytically polished stainless steel and the average surface roughness Ra of the liquid-contacting part is less than 100 nm, then the defect suppression performance is superior (Example 102).

如表2所示,從實施例101與實施例107~109的對比,使用與氟樹脂一同包含導電性材料之接液部之情況下,能夠更抑制藥液的帶電。 As shown in Table 2, comparing Examples 101 with Examples 107-109, the use of a liquid-contact portion incorporating a conductive material along with the fluororesin further suppresses the charging of the liquid.

另一方面,如表1所示,若在藥液中的金屬粒子的含量或特定有機化合物A和特定有機化合物B的含量的合計在上述範圍外,則即使使用剛收容於藥液收容體之後及長期保管後的任一時序中取出之藥液,缺陷抑制性能較差(比較例)。 On the other hand, as shown in Table 1, if the total content of metal particles in the liquid medicine, or the total content of specific organic compound A and specific organic compound B, falls outside the aforementioned range, then even if the liquid medicine is used at any time after being contained in the liquid medicine container or after long-term storage, the defect suppression performance is poor (comparative example).

(實施例34) (Implementation Example 34)

關於實施例15中所使用之PGMEA,反覆進行蒸餾及過濾,製作了特定有機化合物的含量小於0.1質量ppt的藥液。 Regarding the PGMEA used in Example 15, repeated distillation and filtration were performed to produce a solution containing a specific organic compound at a concentration of less than 0.1 ppt by mass.

向該藥液添加8000質量ppt的鄰苯二甲酸二丁酯(Wako Pure Chemical,Ltd.製造),再次將反覆進行過濾而得到之藥液收容於容器(與實施例15相同的容器),得到了實施例34的藥液收容體。實施例34的藥液收容體中,由鄰苯二甲酸二丁酯構成之特定有機化合物A的含量為4800質量ppt及由鄰苯二甲酸二丁酯構成之特定化合物B的含量為10質量ppt。 8000 ppt of dibutyl phthalate (manufactured by Wako Pure Chemical, Ltd.) was added to the drug solution, and the resulting drug solution was repeatedly filtered and contained in a container (the same container as in Example 15) to obtain the drug solution container of Example 34. In the drug solution container of Example 34, the content of specific organic compound A composed of dibutyl phthalate is 4800 ppt by mass, and the content of specific compound B composed of dibutyl phthalate is 10 ppt by mass.

使用收容於實施例34的藥液收容體之藥液進行了與實施例15相同的評價之結果,在50℃下保管藥液收容體1年之後的缺陷抑制性能被評價為“C”,除此以外,得到了與實施例15相同的結果。 The same evaluation results as in Example 15 were obtained using the liquid contained in the liquid container of Example 34. The defect suppression performance of the liquid container after being stored at 50°C for one year was rated as "C". Otherwise, the same results as in Example 15 were obtained.

無。without.

Claims (12)

一種藥液收容體,其具有容器及收容於該容器內之藥液,該藥液含有溶劑、包含金屬原子之含金屬的粒子及ClogP值高於該溶劑的ClogP值的有機化合物,該含金屬的粒子的含量相對於該藥液的總質量為10質量ppt以下,包含ClogP值高於該溶劑的ClogP值的有機化合物之氣體存在於該容器的空隙部中,該氣體中的該有機化合物和該藥液中的該有機化合物的含量的合計相對於該藥液的總質量為100,000質量ppt以下,其中,該氣體中的該有機化合物及該藥液中的該有機化合物均包含鄰苯二甲酸酯,該溶劑為有機溶劑,該容器的接液部的至少一部分為被電解研磨之不鏽鋼,且該容器的該接液部的平均表面粗糙度Ra為1nm~10nm。 A pharmaceutical liquid container includes a container and a pharmaceutical liquid contained within the container. The pharmaceutical liquid contains a solvent, metal-containing particles containing metal atoms, and an organic compound with a ClogP value higher than that of the solvent. The content of the metal-containing particles relative to the total mass of the pharmaceutical liquid is less than 10 mass ppt. A gas containing the organic compound with a ClogP value higher than that of the solvent is present in the pores of the container. The total content of the organic compound in the gas and the organic compound in the liquid is less than 100,000 ppt relative to the total mass of the liquid. Both the organic compound in the gas and the organic compound in the liquid contain phthalates. The solvent is an organic solvent. At least a portion of the liquid-receiving part of the container is electrolytically polished stainless steel, and the average surface roughness Ra of the liquid-receiving part of the container is 1 nm to 10 nm. 如申請專利範圍第1項所述之藥液收容體,其中該含金屬的粒子的含量相對於該藥液的總質量為0.001質量ppt~10質量ppt,該氣體中的該有機化合物和該藥液中的該有機化合物的含量的合計相對於該藥液的總質量為0.1質量ppt~100,000質量ppt。 As described in claim 1, the liquid container contains metal particles at a concentration of 0.001 ppt to 10 ppt relative to the total mass of the liquid, and the total concentrations of the organic compound in the gas and the organic compound in the liquid are 0.1 ppt to 100,000 ppt relative to the total mass of the liquid. 如申請專利範圍第1項或第2項所述之藥液收容體,其中該氣體中的該有機化合物和該藥液中的該有機化合物的含量的合計與該含金屬的粒子的含量之質量比例為0.01~100,000。 As described in claim 1 or 2, the mass ratio of the total content of the organic compound in the gas and the organic compound in the liquid to the content of the metal particles is 0.01 to 100,000. 如申請專利範圍第1項或第2項所述之藥液收容體,其中 該氣體中的該有機化合物及該藥液中的該有機化合物的ClogP值均為6以上。 As described in claim 1 or 2, the liquid container, wherein the ClogP value of both the organic compound in the gas and the organic compound in the liquid is 6 or higher. 如申請專利範圍第1項或第2項所述之藥液收容體,其中該鄰苯二甲酸酯包含選自包括鄰苯二甲酸二辛酯及鄰苯二甲酸二異壬酯之群組中之至少1種。 As described in claim 1 or 2, the phthalate ester comprises at least one selected from the group consisting of dioctyl phthalate and diisononyl phthalate. 如申請專利範圍第5項所述之藥液收容體,其中該鄰苯二甲酸二辛酯的含量與該鄰苯二甲酸二異壬酯的含量之質量比例為1以上。 As described in claim 5, the liquid container contains a drug solution in a mass ratio of dioctyl phthalate to diisononyl phthalate of at least 1. 如申請專利範圍第1項或第2項所述之藥液收容體,其中該藥液中的該有機化合物的含量與該氣體中的該有機化合物的含量之質量比例為1以上。 As described in claim 1 or 2, the liquid container contains an organic compound in a liquid at a mass ratio of 1 or more to the organic compound in a gas. 如申請專利範圍第1項或第2項所述之藥液收容體,其中該有機溶劑為選自包括環己酮、乙酸丁酯、N-甲基-2-吡咯啶酮、4-甲基-2-戊醇、乳酸乙酯、丙二醇單甲醚乙酸酯、丙二醇單乙醚、碳酸丙二酯、乙酸異戊酯、丙二醇單甲醚、丙二醇單丙醚、甲氧基丙酸甲酯、環戊酮、γ-丁內酯、二異戊醚、異丙醇、二甲基亞碸、二乙二醇、乙二醇、二丙二醇、丙二醇、碳酸乙二酯、環丁碸、環庚酮、2-庚酮、丁酸丁酯、異丁酸異丁酯、十一烷、丙酸戊酯、丙酸異戊酯、乙基環己烷、均三甲苯及癸烷之群組中之至少1種。 As described in claim 1 or 2, the organic solvent is selected from at least one of the following: cyclohexanone, butyl acetate, N-methyl-2-pyrrolidone, 4-methyl-2-pentanol, ethyl lactate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, propylene carbonate, isoamyl acetate, propylene glycol monomethyl ether, propylene glycol monopropyl ether, methyl methoxypropionate, cyclopentanone, γ-butyrolactone, diisoamyl ether, isopropanol, dimethyl sulfoxide, diethylene glycol, ethylene glycol, dipropylene glycol, propylene glycol, ethylene carbonate, cyclobutanone, cycloheptanone, 2-heptanone, butyl butyrate, isobutyl isobutyrate, undecane, amyl propionate, isoamyl propionate, ethylcyclohexane, mesitylene, and decane. 如申請專利範圍第1項或第2項所述之藥液收容體,其中該含金屬的粒子中的粒徑為0.5nm~17nm的金屬奈米粒子在每單位體積的該藥液中的含粒子的數量為1.0×101個/cm3~1.0×109個/cm3As described in claim 1 or 2, the number of metal nanoparticles with a particle size of 0.5 nm to 17 nm in the metal-containing particles per unit volume of the drug solution is 1.0 × 10¹ particles/ cm³ to 1.0 × 10⁹ particles/ cm³ . 如申請專利範圍第1項或第2項所述之藥液收容體,其中該氣體包含氮氣,該氮氣的含量相對於該空隙部的總容量為95體積%~99.9999體積%,該氣體中的該有機化合物的含量相對於該藥液的總質量為0.05質量ppt~50,000質量ppt。 As described in claim 1 or 2, the liquid container contains nitrogen gas, the nitrogen content being 95% to 99.9999% of the total volume of the pores, and the organic compound content in the gas being 0.05 to 50,000 ppt of the total mass of the liquid. 如申請專利範圍第1項或第2項所述之藥液收容體,其中該藥液收容體中的該容器的孔隙率為50體積%~99.99體積%。 As described in claim 1 or 2, the liquid medicine container within the liquid medicine container has a porosity of 50% to 99.99% by volume. 如申請專利範圍第1項或第2項所述之藥液收容體,其中該藥液用作選自包括顯影液、沖洗液、晶圓清洗液、線清洗液、預濕液、光阻液、下層膜形成用液、上層膜形成用液及硬塗形成用液之群組中之至少1種液體的原料。 The liquid container as described in claim 1 or 2, wherein the liquid is used as a raw material selected from at least one liquid selected from the group consisting of developer, washing solution, wafer cleaning solution, wire cleaning solution, pre-wetting solution, photoresist, lower film forming solution, upper film forming solution, and hard coating forming solution.
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