TWI900876B - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing methodInfo
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- TWI900876B TWI900876B TW112129083A TW112129083A TWI900876B TW I900876 B TWI900876 B TW I900876B TW 112129083 A TW112129083 A TW 112129083A TW 112129083 A TW112129083 A TW 112129083A TW I900876 B TWI900876 B TW I900876B
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- H10P72/0414—
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/20—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought
- B08B9/28—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking
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- H10P52/00—
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- H10P72/0432—
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- Cleaning Or Drying Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
本發明係關於一種藉由對保持於旋轉之基板保持部之基板供給處理液而對基板實施規定之基板處理,且捕集於該基板處理過程中自基板甩掉之處理液之液滴的基板處理技術。於該裝置中,一面使旋轉杯部繞旋轉軸旋轉一面自該旋轉杯部之內側對旋轉杯部直接供給杯清洗液。藉此,既可削減杯清洗液之使用量且自旋轉杯部去除處理液而將旋轉杯部保持清潔。The present invention relates to a substrate processing technology that applies a predetermined substrate treatment to a substrate held on a rotating substrate holder by supplying a processing liquid to the substrate and capturing droplets of the processing liquid that are blown off the substrate during the substrate processing. In this device, a cup cleaning liquid is directly supplied to the rotating cup from the inside while the rotating cup rotates about its rotation axis. This reduces the amount of cup cleaning liquid used and removes the processing liquid from the rotating cup, keeping it clean.
Description
本發明係關於一種藉由處理液對基板實施規定之基板處理之基板處理裝置及基板處理方法者。此處,基板包含半導體晶圓、液晶顯示裝置用玻璃基板、電漿顯示器用玻璃基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用玻璃基板、太陽能電池用基板等(以下,簡稱為「基板」)。又,處理包含斜面處理。The present invention relates to a substrate processing apparatus and method for performing a prescribed substrate treatment on a substrate using a treatment liquid. Herein, the substrate includes semiconductor wafers, glass substrates for liquid crystal displays, glass substrates for plasma displays, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, glass substrates for photomasks, and solar cell substrates (hereinafter referred to as "substrates"). Furthermore, the treatment includes bevel treatment.
作為使半導體晶圓等基板旋轉且對該基板供給處理液而實施藥液處理或洗淨處理等基板處理之基板處理裝置,例如已知有日本專利特開2017-92244號公報(專利文獻1)所記載之裝置。於該基板處理裝置中,為接住基板處理過程中自旋轉之基板飛散之處理液等,設置有外杯作為防飛散構件。外杯以一面使其內周面與基板之外周對向一面包圍旋轉之基板之外周之方式配置。因此,外杯捕集自旋轉之基板甩掉之處理液之液滴。A substrate processing apparatus that rotates substrates such as semiconductor wafers and supplies a processing liquid to the substrate to perform chemical treatment or cleaning, such as by applying a treatment liquid to the substrate, is known. For example, the apparatus described in Japanese Patent Publication No. 2017-92244 (Patent Document 1) is known. In this substrate processing apparatus, an outer cup is provided as a scattering prevention member to catch any processing liquid that scatters from the rotating substrate during the substrate processing process. The outer cup is positioned so that its inner circumference faces the outer circumference of the substrate and surrounds the outer circumference of the rotating substrate. Thus, the outer cup collects droplets of processing liquid that are shaken off by the rotating substrate.
於該先前裝置中,為將外杯之內周面洗淨而於基座部設置有複數個杯洗淨噴嘴。又,於基座部之上方配置有杯洗淨構件。於進行杯洗淨時,自杯洗淨噴嘴將洗淨液(相當於本發明之「杯清洗液」之一例)通過設置於杯洗淨構件之引導部供給至外杯之內周面。因此,為將外杯之內周面全體洗淨,需設置多個杯洗淨噴嘴。且,難以將自各杯洗淨噴嘴向引導部噴出之洗淨液全部供給至外杯,有時洗淨液之一部分自引導部溢出。基於該等情況,外杯之洗淨(相當於本發明之「杯清洗處理」之一例)需要相對大量之洗淨液。即,於先前之基板處理裝置中,因使用大量之洗淨液而對環境賦予極大之負荷,對於減少環境負荷有改善之餘地。In the previous device, a plurality of cup cleaning nozzles are provided on the base portion to clean the inner circumference of the outer cup. In addition, a cup cleaning component is arranged above the base portion. When the cup is cleaned, cleaning liquid (equivalent to an example of the "cup cleaning liquid" of the present invention) is supplied from the cup cleaning nozzle to the inner circumference of the outer cup through the guide portion provided on the cup cleaning component. Therefore, in order to clean the entire inner circumference of the outer cup, a plurality of cup cleaning nozzles need to be provided. Moreover, it is difficult to supply all the cleaning liquid ejected from each cup cleaning nozzle to the guide portion to the outer cup, and sometimes part of the cleaning liquid overflows from the guide portion. Based on these circumstances, cleaning the outer cup (equivalent to one example of the "cup cleaning process" of the present invention) requires a relatively large amount of cleaning liquid. In other words, in previous substrate processing equipment, the use of large amounts of cleaning liquid imposes a significant load on the environment. There is room for improvement in reducing this environmental load.
本發明係鑑於上述問題而完成者,目的在於提供一種可藉由削減杯清洗處理所需之杯清洗液之使用量而減少環境負荷之基板處理裝置及基板處理方法。The present invention has been made in view of the above-mentioned problems, and its object is to provide a substrate processing apparatus and a substrate processing method that can reduce the environmental load by reducing the usage of cup cleaning liquid required for the cup cleaning process.
本發明之一態様係一種基板處理裝置,特徵在於具備:基板保持部,其設置為可一面保持基板一面繞沿鉛直方向延伸之旋轉軸旋轉;旋轉杯部,其設置為可一面包圍保持於基板保持部之基板之外周一面繞旋轉軸旋轉;旋轉機構,其使基板保持部及旋轉杯部旋轉;處理機構,其藉由對保持於旋轉之基板保持部之基板供給處理液,而對基板實施規定之基板處理;杯清洗機構,其藉由自旋轉軸側將杯清洗液直接供給至捕集自基板飛散之處理液之旋轉杯部,而進行自旋轉杯部去除處理液之杯清洗處理;及控制部,其以於進行基板處理後一面使旋轉杯部旋轉一面將杯清洗液供給至旋轉杯部之方式,控制旋轉機構及清洗液供給部。One aspect of the present invention is a substrate processing device, characterized by comprising: a substrate holding portion configured to hold a substrate while rotating about a rotation axis extending in a lead-line direction; a rotating cup portion configured to surround the outer circumference of a substrate held on the substrate holding portion and rotate about the rotation axis; a rotating mechanism that rotates the substrate holding portion and the rotating cup portion; and a processing mechanism that rotates the substrate held on the rotating substrate holding portion. The processing liquid is supplied to the plate to perform a specified substrate processing on the substrate; the cup cleaning mechanism directly supplies the cup cleaning liquid from the side of the rotation axis to the rotating cup portion that captures the processing liquid scattered from the substrate, thereby removing the processing liquid from the rotating cup portion; and the control portion controls the rotating mechanism and the cleaning liquid supply portion in a manner that the cup cleaning liquid is supplied to the rotating cup portion while the rotating cup portion is rotated after the substrate processing.
又,本發明之另一態様係一種基板處理方法,特徵在於具備以下步驟:藉由於以旋轉杯部包圍繞沿鉛直方向延伸之旋轉軸旋轉之基板之外周之狀態下對基板供給處理液,而由處理液對基板實施規定之基板處理,且以旋轉杯部捕集自基板飛散之處理液;及藉由一面使捕集到處理液之旋轉杯部繞旋轉軸旋轉,一面自旋轉軸側對旋轉杯部直接供給杯清洗液,而自旋轉杯部去除處理液。In addition, another aspect of the present invention is a substrate processing method characterized by having the following steps: supplying a processing liquid to a substrate while a rotating cup portion surrounds the outer periphery of the substrate rotating around a rotation axis extending in a lead vertical direction, thereby performing a predetermined substrate processing on the substrate with the processing liquid, and capturing the processing liquid scattered from the substrate with the rotating cup portion; and removing the processing liquid from the rotating cup portion by directly supplying a cup cleaning liquid to the rotating cup portion from the side of the rotation axis while rotating the rotating cup portion that has captured the processing liquid around the rotation axis.
於如此構成之發明中,一面使捕集到處理液之旋轉杯部繞旋轉軸旋轉一面自該旋轉杯部之內側對旋轉杯部直接供給杯清洗液。因此,與專利文獻1所記載之基板處理裝置中之使用量相比,可明顯削減杯清洗液之使用量。In the present invention thus constructed, the cup cleaning liquid is directly supplied to the rotating cup from the inner side while the rotating cup portion that has collected the processing liquid rotates about the rotation axis. Therefore, the amount of cup cleaning liquid used can be significantly reduced compared to the amount used in the substrate processing apparatus described in Patent Document 1.
如上所述,根據本發明,可藉由削減捕集自基板飛散之處理液之旋轉杯部之杯清洗所需之杯清洗液之使用量而減少環境負荷。As described above, according to the present invention, the environmental load can be reduced by reducing the amount of cup cleaning liquid required for cleaning the rotating cup portion that collects the processing liquid scattered from the substrate.
圖1係顯示裝備本發明之基板處理裝置之第1實施形態之基板處理系統之概略構成之俯視圖。圖1並非顯示基板處理系統100之外觀者,而係藉由將基板處理系統100之外壁面板或其他一部分構成除外而容易理解地表示其內部構造之模式圖。該基板處理系統100例如係設置於無塵室內,逐片處理僅於一主表面形成有電路圖案等(以下稱為「圖案」)之基板W之單片式裝置。然後,於裝備於基板處理系統100之處理單元1中,執行處理液之基板處理。本說明書中,將基板之兩主表面中形成有圖案之圖案形成面(一主表面)稱為「正面」,將其相反側之未形成圖案之另一主表面稱為「背面」。又,將朝向下方之面稱為「下表面」,將朝向上方之面稱為「上表面」。又,本說明書中,「圖案形成面」意指基板中於任意區域形成有凹凸圖案之面。FIG1 is a top view showing the schematic structure of a substrate processing system equipped with the first embodiment of the substrate processing device of the present invention. FIG1 does not show the external appearance of the substrate processing system 100, but is a schematic diagram showing its internal structure in an easily understandable manner by excluding the outer wall panel or other parts of the substrate processing system 100. The substrate processing system 100 is, for example, a single-chip device that is set in a clean room and processes substrates W having a circuit pattern or the like (hereinafter referred to as "pattern") formed only on one main surface one by one. Then, in the processing unit 1 equipped in the substrate processing system 100, substrate processing with a processing liquid is performed. In this specification, the pattern forming surface (one main surface) on which a pattern is formed of the two main surfaces of the substrate is referred to as the "front side", and the other main surface on the opposite side where no pattern is formed is referred to as the "back side". The surface facing downward is referred to as the "lower surface," and the surface facing upward is referred to as the "upper surface." In this specification, the "pattern-formed surface" refers to a surface on which a concave-convex pattern is formed in any region of a substrate.
此處,作為本實施形態中之「基板」,可應用半導體晶圓、光罩用玻璃基板、液晶顯示用玻璃基板、電漿顯示用玻璃基板、FED(Field Emission Display:場發射顯示器)用基板、光碟用基板、磁碟用基板、磁光碟用基板等各種基板。以下,主要採用用於半導體晶圓之處理之基板處理裝置為例而參考圖式進行說明,但同樣亦可應用於以上所例示之各種基板之處理。The term "substrate" used in this embodiment includes various substrates, such as semiconductor wafers, mask glass substrates, liquid crystal display glass substrates, plasma display glass substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates. The following description primarily uses a substrate processing apparatus for processing semiconductor wafers as an example, with reference to the drawings. However, the present invention is also applicable to processing various substrates exemplified above.
如圖1所示,基板處理系統100具有對基板W實施處理之基板處理區域110。與該基板處理區域110相鄰而設置有傳載部120。傳載部120具有可保持複數個用以收納基板W之容器C(以密閉之狀態收納複數片基板W之FOUP(Front Opening Unified Pod:前開式晶圓匣)、SMIF(Standard Mechanical Interface:標準機械介面)匣、OC(Open Cassette:開放式晶圓匣)等)之容器保持部121。又,傳載部120具備傳載機器人122,該傳載機器人122用以對保持於容器保持部121之容器C進行接取,自容器C取出未處理之基板W,或將已處理之基板W收納於容器C。於各容器C中,以大致水平之姿勢收納有複數片基板W。As shown in FIG1 , a substrate processing system 100 includes a substrate processing area 110 for processing substrates W. A transfer unit 120 is disposed adjacent to the substrate processing area 110. The transfer unit 120 includes a container holder 121 that can hold a plurality of containers C for storing substrates W (such as FOUPs (Front Opening Unified Pods), SMIF (Standard Mechanical Interface) cassettes, and OC (Open Cassettes) that store multiple substrates W in a sealed state). Furthermore, the transfer unit 120 includes a transfer robot 122 that is used to receive containers C held in the container holder 121, remove unprocessed substrates W from the containers C, and store processed substrates W in the containers C. In each container C, a plurality of substrates W are stored in a substantially horizontal position.
傳載機器人122具備固定於裝置殼體之基座部122a、設置為可相對於基座部122a繞鉛直軸旋動之多關節臂122b、及安裝於多關節臂122b之前端之手122c。手122c為可於其上表面載置並保持基板W之構造。由於具有此種多關節臂及基板保持用之手之傳載機器人衆所周知,故省略詳細之說明。The transport robot 122 comprises a base 122a fixed to the device housing, a multi-jointed arm 122b rotatable about a linear axis relative to the base 122a, and a hand 122c mounted on the front end of the multi-jointed arm 122b. The hand 122c is configured to place and hold a substrate W on its upper surface. Since transport robots with such multi-jointed arms and substrate-holding hands are well known, a detailed description thereof will be omitted.
於基板處理區域110中,載置台112設置為可載置來自傳載機器人122之基板W。又,於俯視下,於基板處理區域110之大致中央配置基板搬送機器人111。再者,以包圍該基板搬送機器人111之方式配置複數個處理單元1。具體而言,面向配置有基板搬送機器人111之空間配置複數個處理單元1。對於該等處理單元1,基板搬送機器人111隨機對載置台112進行接取,於與載置台112之間交接基板W。另一方面,各處理單元1係對基板W執行規定處理者,相當於本發明之基板處理裝置。本實施形態中,該等處理單元(基板處理裝置)1具有相同之功能。因此,可進行複數片基板W之並行處理。另,若基板搬送機器人111可自傳載機器人122直接交接基板W,則未必需要載置台112。In the substrate processing area 110, a loading platform 112 is configured to load a substrate W from a carrier robot 122. In addition, a substrate transport robot 111 is arranged approximately in the center of the substrate processing area 110 when viewed from above. Furthermore, a plurality of processing units 1 are arranged so as to surround the substrate transport robot 111. Specifically, a plurality of processing units 1 are arranged facing the space in which the substrate transport robot 111 is arranged. With respect to these processing units 1, the substrate transport robot 111 randomly accesses the loading platform 112 and transfers the substrate W between the loading platform 112. On the other hand, each processing unit 1 is a unit that performs prescribed processing on the substrate W, which is equivalent to the substrate processing device of the present invention. In this embodiment, these processing units (substrate processing devices) 1 have the same function. Therefore, it is possible to process a plurality of substrates W in parallel. In addition, if the substrate transport robot 111 can directly receive the substrates W from the carrier robot 122 , the placement table 112 is not necessarily required.
圖2係顯示本發明之基板處理裝置之第1實施形態之構成之圖。又,圖3係模式性顯示腔室之構成及安裝於腔室之構成之圖。於圖2、圖3及以下參考之各圖中,為便於理解,有誇大或簡化地圖示各部之尺寸或數量之情形。如圖3所示,基板處理裝置(處理單元)1中使用之腔室11具有自鉛直上方俯視時呈矩形形狀之底壁11a、自底壁11a之周圍立設之4片側壁11b~11e、及覆蓋側壁11b~11e之上端部之頂壁11f。藉由組合該等底壁11a、側壁11b~11e及頂壁11f,形成大致長方體形狀之內部空間12。FIG2 is a diagram showing the structure of the first embodiment of the substrate processing device of the present invention. FIG3 is a diagram schematically showing the structure of the chamber and the structure installed in the chamber. In FIG2, FIG3 and the following reference figures, the size or quantity of each part is exaggerated or simplified for ease of understanding. As shown in FIG3, the chamber 11 used in the substrate processing device (processing unit) 1 has a bottom wall 11a that is rectangular when viewed from directly above, four side walls 11b to 11e erected from the periphery of the bottom wall 11a, and a top wall 11f covering the upper ends of the side walls 11b to 11e. By combining the bottom wall 11a, the side walls 11b to 11e and the top wall 11f, an internal space 12 that is roughly rectangular in shape is formed.
於底壁11a之上表面,基座支持構件16、16一面相互隔開一面由螺栓等緊固構件固定。即,自底壁11a立設基座支持構件16。於該等基座支持構件16、16之上端部,藉由螺栓等緊固構件固定基座構件17。該基座構件17由具有較底壁11a小之平面尺寸,同時厚度較底壁11a厚且具有高剛性之板材構成。如圖2所示,基座構件17藉由基座支持構件16、16自底壁11a向鉛直上方抬起。即,於腔室11之內部空間12之底部形成有所謂之高底板構造。如後續詳述般,該基座構件17之上表面加工成可設置對基板W實施基板處理之基板處理部SP,且於該上表面設置基板處理部SP。構成該基板處理部SP之各部與控制整個裝置之控制單元10電性連接,根據來自控制單元10之指示而動作。另,稍後詳述基座構件17之形狀、基板處理部SP之構成或動作。On the upper surface of the bottom wall 11a, base support members 16, 16 are spaced apart from each other and secured by bolts or other fastening members. Specifically, the base support members 16 are erected from the bottom wall 11a. A base member 17 is secured to the upper ends of these base support members 16, 16 by bolts or other fastening members. This base member 17 is constructed from a plate material that is smaller in planar dimensions than the bottom wall 11a, yet thicker and possesses high rigidity. As shown in FIG2 , the base member 17 is lifted vertically upward from the bottom wall 11a by the base support members 16, 16. In other words, a so-called high floor structure is formed at the bottom of the interior space 12 of the chamber 11. As will be described in detail below, the upper surface of the base member 17 is machined to accommodate a substrate processing unit SP for performing substrate processing on a substrate W. The substrate processing unit SP is located on this upper surface. The components comprising the substrate processing unit SP are electrically connected to the control unit 10, which controls the entire apparatus, and operate according to instructions from the control unit 10. The shape of the base member 17 and the structure and operation of the substrate processing unit SP will be described in detail later.
如圖2及圖3所示,於腔室11之頂壁11f安裝有風扇過濾器單元(FFU:Fan Filter Unit)13。該風扇過濾器單元13將設置有基板處理裝置1之無塵室內之空氣進一步淨化,並供給至腔室11內之內部空間12。風扇過濾器單元13具備用以提取無塵室內之空氣並將其送出至腔室11內之風扇及過濾器(例如HEPA(High Efficiency Particulate Air:高效微粒空氣)過濾器),經由設置於頂壁11f之開口11f1而送入清潔空氣。藉此,於腔室11內之內部空間12形成清潔空氣之降流。又,為將自風扇過濾器單元13供給之清潔空氣均勻地分散,而於頂壁11f之正下方設置有穿設有複數個吹出孔之沖孔板14。As shown in Figures 2 and 3 , a fan filter unit (FFU) 13 is installed on the ceiling 11f of the chamber 11. This FFU 13 further purifies the air within the cleanroom housing the substrate processing apparatus 1 and supplies it to the interior space 12 of the chamber 11. The FFU 13 includes a fan and a filter (e.g., a HEPA (High Efficiency Particulate Air) filter) for extracting air from the cleanroom and delivering it to the chamber 11. Clean air is introduced through an opening 11f1 in the ceiling 11f, creating a downward flow of clean air within the interior space 12 of the chamber 11. Furthermore, in order to evenly distribute the clean air supplied from the fan filter unit 13, a perforated plate 14 having a plurality of blow-out holes is provided directly below the top wall 11f.
如圖3所示,於基板處理裝置1中,於4片側壁11b~11e中與基板搬送機器人111對向之側壁11b上設置有搬送用開口11b1,將內部空間12與腔室11之外部連通。因此,基板搬送機器人111之手(省略圖示)可經由搬送用開口11b1對基板處理部SP進行接取。即,藉由設置搬送用開口11b1,可對內部空間12搬入搬出基板W。又,用以將該搬送用開口11b1開閉之擋板15安裝於側壁11b。As shown in Figure 3, in the substrate processing apparatus 1, a transfer opening 11b1 is provided on the sidewall 11b, which faces the substrate transfer robot 111, of the four sidewalls 11b-11e. This connects the interior space 12 with the exterior of the chamber 11. Therefore, the hand of the substrate transfer robot 111 (not shown) can access the substrate processing unit SP through the transfer opening 11b1. Specifically, the provision of the transfer opening 11b1 allows substrates W to be loaded and unloaded into and out of the interior space 12. Furthermore, a barrier 15 is attached to the sidewall 11b to open and close the transfer opening 11b1.
於擋板15連接有擋板開閉機構(省略圖示),根據來自控制單元10之開閉指令將擋板15開閉。更具體而言,於基板處理裝置1中,於將未處理之基板W搬入腔室11時,擋板開閉機構打開擋板15,藉由基板搬送機器人111之手將未處理之基板W以面朝上姿勢搬入基板處理部SP。即,基板W以將上表面Wf朝向上方之狀態載置於基板處理部SP之旋轉吸盤21上。且,於搬入該基板後基板搬送機器人111之手自腔室11退避時,擋板開閉機構將擋板15關閉。且,於腔室11之處理空間(相當於後續詳述之密閉空間12a)內,藉由基板處理部SP,執行作為本發明之「基板處理」之一例之針對基板W之周緣部Ws之斜面處理。又,於斜面處理結束後,擋板開閉機構再次打開擋板15,由基板搬送機器人111之手將已處理之基板W自基板處理部SP搬出。如此,於本實施形態中,腔室11之內部空間12保持常溫環境。另,本說明書中,「常溫」意指處於5℃~35℃之溫度範圍內。A shutter opening and closing mechanism (not shown) is connected to the shutter 15 and opens and closes the shutter 15 in response to opening and closing commands from the control unit 10. More specifically, in the substrate processing apparatus 1, when an unprocessed substrate W is loaded into the chamber 11, the shutter opening and closing mechanism opens the shutter 15. The unprocessed substrate W is then loaded face-up into the substrate processing section SP by the substrate transport robot 111. Specifically, the substrate W is placed on the rotary chuck 21 of the substrate processing section SP with its upper surface Wf facing upward. Furthermore, after loading the substrate, the shutter opening and closing mechanism closes the shutter 15 when the substrate transport robot 111 retracts from the chamber 11. Furthermore, within the processing space of the chamber 11 (corresponding to the enclosed space 12a described in detail below), the substrate processing section SP performs bevel processing on the peripheral portion Ws of the substrate W, an example of "substrate processing" in the present invention. After the bevel processing is completed, the shutter opening and closing mechanism opens the shutter 15 again, and the substrate transport robot 111 removes the processed substrate W from the substrate processing section SP. Thus, in this embodiment, the interior space 12 of the chamber 11 is maintained at a normal temperature. In this specification, "normal temperature" refers to a temperature range of 5°C to 35°C.
如圖3所示,側壁11d隔著設置於基座構件17之基板處理部SP(圖2)位於側壁11b之相反側。於該側壁11d設置有保養用開口11d1。於保養時,如該圖所示,將保養用開口11d1開放。因此,操作者可自裝置之外部經由保養用開口11d1對基板處理部SP進行接取。另一方面,於基板處理時,以將保養用開口11d1封閉之方式安裝蓋構件19。如此,於本實施形態中,蓋構件19相對於側壁11d裝卸自如。As shown in FIG3 , the side wall 11d is located on the opposite side of the side wall 11b across the substrate processing unit SP ( FIG2 ) provided on the base member 17. A maintenance opening 11d1 is provided on the side wall 11d. During maintenance, as shown in the figure, the maintenance opening 11d1 is opened. Therefore, the operator can access the substrate processing unit SP from the outside of the device through the maintenance opening 11d1. On the other hand, during substrate processing, the cover member 19 is installed in a manner that closes the maintenance opening 11d1. Thus, in this embodiment, the cover member 19 can be freely attached and detached relative to the side wall 11d.
又,於側壁11e之外側面,安裝有用以對基板處理部SP供給加熱後之惰性氣體(本實施形態中為氮氣)之加熱氣體供給部47。該加熱氣體供給部47內置有加熱器471。Furthermore, a heating gas supply unit 47 is installed on the outer side of the side wall 11e for supplying heated inert gas (nitrogen gas in this embodiment) to the substrate processing unit SP. The heating gas supply unit 47 has a heater 471 built in.
如此,於腔室11之外壁側配置擋板15、蓋構件19及加熱氣體供給部47。相對於此,於腔室11之內側即內部空間12,於高底板構造之基座構件17之上表面設置基板處理部SP。以下,參考圖2至圖13,且對基板處理部SP之構成進行說明。Thus, baffles 15, lid members 19, and heated gas supply unit 47 are arranged on the outer wall of chamber 11. Conversely, within chamber 11, or within interior space 12, a substrate processing unit SP is installed on the upper surface of a base member 17 with a raised floor structure. The following describes the structure of substrate processing unit SP with reference to Figures 2 to 13.
圖4係模式性顯示設置於基座構件上之基板處理部之構成之俯視圖。以下,為明確裝置各部之配置關係或動作等,適當標注以Z方向為鉛直方向,以XY平面為水平面之座標系。於圖4之座標系中,將與基板W之搬送路徑TP平行之水平方向設為「X方向」,將與其正交之水平方向設為「Y方向」。更詳細而言,將自腔室11之內部空間12朝向搬送用開口11b1及保養用開口11d1之方向分別稱為「+X方向」及「-X方向」,將自腔室11之內部空間12朝向側壁11c、11e之方向分別稱為「-Y方向」及「+Y方向」,將朝向鉛直上方及鉛直下方之方向分別稱為「+Z方向」及「-Z方向」。又,該圖中之「CR液」意指杯清洗液。Figure 4 schematically illustrates a top view of the substrate processing unit mounted on a base structure. To clarify the arrangement and operation of various components of the apparatus, a coordinate system is described below, using the Z direction as the vertical axis and the XY plane as the horizontal plane. In the coordinate system of Figure 4, the horizontal direction parallel to the transport path TP of the substrate W is designated as the "X direction," and the horizontal direction perpendicular to it is designated as the "Y direction." More specifically, the directions from the interior space 12 of chamber 11 toward transfer opening 11b1 and maintenance opening 11d1 are referred to as the "+X direction" and the "-X direction," respectively. The directions from the interior space 12 of chamber 11 toward sidewalls 11c and 11e are referred to as the "-Y direction" and the "+Y direction," respectively. The directions directly above and directly below the lead are referred to as the "+Z direction" and the "-Z direction," respectively. "CR liquid" in the figure refers to cup cleaning liquid.
基板處理部SP具備保持旋轉機構2、防飛散機構3、上表面保護加熱機構4、處理機構5、氛圍分離機構6、升降機構7、定心機構8基板觀察機構9及杯清洗機構200。該等機構設置於基座構件17上。即,以具有較腔室11高剛性之基座構件17為基準,以預設之位置關係互相配置保持旋轉機構2、防飛散機構3、上表面保護加熱機構4、處理機構5、氛圍分離機構6、升降機構7、定心機構8、基板觀察機構9及杯清洗機構200。The substrate processing section SP includes a holding and rotating mechanism 2, an anti-scattering mechanism 3, an upper surface protection and heating mechanism 4, a processing mechanism 5, an atmosphere separation mechanism 6, an elevating mechanism 7, a centering mechanism 8, a substrate observation mechanism 9, and a cup cleaning mechanism 200. These mechanisms are mounted on a base member 17. Specifically, the holding and rotating mechanism 2, the anti-scattering mechanism 3, the upper surface protection and heating mechanism 4, the processing mechanism 5, the atmosphere separation mechanism 6, the elevating mechanism 7, the centering mechanism 8, the substrate observation mechanism 9, and the cup cleaning mechanism 200 are positioned relative to each other in a predetermined relationship based on the base member 17, which has a higher rigidity than the chamber 11.
如圖2所示,保持旋轉機構2具備:基板保持部2A,其將基板W以基板W之正面朝向上方之狀態保持大致水平姿勢;及旋轉機構2B,其使保持有基板W之基板保持部2A及防飛散機構3之一部分同步旋轉。因此,當旋轉機構2B根據來自控制單元10之旋轉指令而作動時,基板W及防飛散機構3之旋轉杯部31繞與鉛直方向Z平行地延伸之旋轉軸AX旋轉。As shown in FIG2 , the holding and rotating mechanism 2 includes a substrate holding portion 2A that holds a substrate W in a substantially horizontal position with its front surface facing upward, and a rotating mechanism 2B that synchronously rotates the substrate holding portion 2A holding the substrate W and a portion of the scattering prevention mechanism 3. Therefore, when the rotating mechanism 2B is activated in response to a rotation command from the control unit 10 , the substrate W and the rotating cup portion 31 of the scattering prevention mechanism 3 rotate about a rotation axis AX extending parallel to the vertical direction Z.
基板保持部2A具備較基板W小之圓板狀之構件即旋轉吸盤21。旋轉吸盤21設置為其上表面大致水平,其中心軸與旋轉軸AX一致。尤其,於本實施形態中,如圖4所示,基板保持部2A之中心(相當於旋轉吸盤21之中心軸)較腔室11之中心11g朝(+X)方向偏移。即,基板保持部2A配置為,自腔室11之上方俯視時,旋轉吸盤21之中心軸(旋轉軸AX)位於自內部空間12之中心11g朝搬送用開口11b1側偏移距離Lof之處理位置。另,為明確後述之裝置各部之配置關係,於本說明書中,將通過偏移之基板保持部2A之中心(旋轉軸AX),且與搬送路徑TP正交之假想線及與搬送路徑TP平行之假想線分別稱為「第1假想水平線VL1」及「第2假想水平線VL2」。The substrate holder 2A includes a rotating suction cup 21, a disc-shaped component that is smaller than the substrate W. The rotating suction cup 21 is arranged so that its upper surface is substantially horizontal, and its central axis is aligned with the rotation axis AX. In particular, in this embodiment, as shown in FIG4 , the center of the substrate holder 2A (equivalent to the central axis of the rotating suction cup 21) is offset in the (+X) direction relative to the center 11g of the chamber 11. That is, the substrate holder 2A is configured so that, when viewed from above the chamber 11, the central axis of the rotating suction cup 21 (rotation axis AX) is located at a processing position that is offset by a distance Lof from the center 11g of the internal space 12 toward the transfer opening 11b1. In addition, in order to clarify the configuration relationship of the various parts of the device described later, in this specification, the imaginary line passing through the center of the offset substrate holding part 2A (rotation axis AX) and perpendicular to the transport path TP and the imaginary line parallel to the transport path TP are respectively referred to as the "first imaginary horizontal line VL1" and the "second imaginary horizontal line VL2".
於旋轉吸盤21之下表面連結圓筒狀之旋轉軸部22。旋轉軸部22於使其軸線與旋轉軸AX一致之狀態下,沿鉛直方向Z延設。又,於旋轉軸部22連接旋轉機構2B。A cylindrical rotating shaft 22 is connected to the lower surface of the rotating suction cup 21. The rotating shaft 22 extends along the vertical direction Z with its axis aligned with the rotation axis AX. Furthermore, the rotating mechanism 2B is connected to the rotating shaft 22.
旋轉機構2B具有產生用以使基板保持部2A及防飛散機構3之旋轉杯部31旋轉之旋轉驅動力之馬達23、及用以傳遞該旋轉驅動力之動力傳遞部24。馬達23具有伴隨旋轉驅動力之產生而旋轉之旋轉軸231。旋轉軸231以朝鉛直下方延設之姿勢設置於基座構件17之馬達安裝部位171。更詳細而言,如圖3所示,馬達安裝部位171係一面與保養用開口11d1對向一面沿(+X)方向切除之部位。該馬達安裝部位171之切除寬度(Y方向尺寸)與馬達23之Y方向寬度大致相同。因此,馬達23一面使其側面與馬達安裝部位171卡合一面沿X方向自如移動。The rotating mechanism 2B has a motor 23 that generates a rotational drive force for rotating the substrate holding portion 2A and the rotating cup portion 31 of the anti-scattering mechanism 3, and a power transmission portion 24 for transmitting the rotational drive force. The motor 23 has a rotation shaft 231 that rotates as the rotational drive force is generated. The rotation shaft 231 is arranged on the motor mounting portion 171 of the base member 17 in a posture extending directly downward. In more detail, as shown in Figure 3, the motor mounting portion 171 is a portion that is cut out along the (+X) direction on one side facing the maintenance opening 11d1 and on the other side. The cutout width (Y-direction dimension) of the motor mounting portion 171 is approximately the same as the Y-direction width of the motor 23. Therefore, the motor 23 can move freely in the X direction while engaging its side surface with the motor mounting portion 171 .
於馬達安裝部位171,將馬達23一面於X方向上定位一面將其固定於基座構件17。於自基座構件17向下方突出之旋轉軸231之前端部安裝有第1滑輪241。又,於基板保持部2A之下方端部安裝有第2滑輪242。更詳細而言,基板保持部2A之下方端部插通設置於基座構件17之旋轉吸盤安裝部位172之貫通孔,朝基座構件17之下方突出。於該突出部分設置有第2滑輪242。且,於第1滑輪241及第2滑輪242之間架設環形帶243。如此,於本實施形態中,由第1滑輪241、第2滑輪242及環形帶243構成動力傳遞部24。At the motor mounting portion 171, the motor 23 is positioned in the X direction while being fixed to the base member 17. A first pulley 241 is mounted on the front end of the rotating shaft 231, which protrudes downward from the base member 17. Furthermore, a second pulley 242 is mounted on the lower end of the substrate holding portion 2A. More specifically, the lower end of the substrate holding portion 2A is inserted through a through hole provided in the rotating suction cup mounting portion 172 of the base member 17, protruding downward from the base member 17. The second pulley 242 is mounted on this protruding portion. Furthermore, an endless belt 243 is provided between the first pulley 241 and the second pulley 242. Thus, in this embodiment, the power transmission unit 24 is composed of the first pulley 241, the second pulley 242, and the endless belt 243.
旋轉吸盤21之中央部設置有貫通孔(省略圖示),與旋轉軸部22之內部空間連通。於內部空間中,經由介裝有閥(省略圖示)之配管25而連接泵26。該泵26及閥電性連接於控制單元10,根據來自控制單元10之指令而動作。藉此,選擇性地將負壓及正壓施加至旋轉吸盤21。例如,當於將基板W以大致水平姿勢置於旋轉吸盤21之上表面之狀態下,泵26對旋轉吸盤21施加負壓時,旋轉吸盤21自下方吸附保持基板W。另一方面,當泵26對旋轉吸盤21施加正壓時,基板W可自旋轉吸盤21之上表面卸除。又,當停止泵26之吸引時,基板W可於旋轉吸盤21之上表面上水平移動。A through hole (not shown) is provided in the central portion of the rotary suction cup 21, which communicates with the internal space of the rotary shaft portion 22. In the internal space, a pump 26 is connected via a pipe 25 in which a valve (not shown) is installed. The pump 26 and the valve are electrically connected to the control unit 10 and operate according to the instructions from the control unit 10. In this way, negative pressure and positive pressure are selectively applied to the rotary suction cup 21. For example, when the substrate W is placed on the upper surface of the rotary suction cup 21 in a roughly horizontal position, when the pump 26 applies negative pressure to the rotary suction cup 21, the rotary suction cup 21 adsorbs and holds the substrate W from below. On the other hand, when the pump 26 applies positive pressure to the spin chuck 21, the substrate W can be removed from the upper surface of the spin chuck 21. Moreover, when the suction of the pump 26 is stopped, the substrate W can be moved horizontally on the upper surface of the spin chuck 21.
於旋轉吸盤21中,經由設置於旋轉軸部22之中央部之配管28連接氮氣供給部29。氮氣供給部29將自設置基板處理系統100之工廠之設備等供給之常溫氮氣以與來自控制單元10之氣體供給指令相應之流量及時序輸送至旋轉吸盤21,於基板W之下表面Wb側使氮氣自中央部朝徑向外側流通。另,於本實施形態中,使用氮氣,但亦可使用其他惰性氣體。關於此點,對於自後續說明之中央噴嘴噴出之加熱氣體亦同樣。又,「流量」意指氮氣等流體於每單位時間移動之量。The rotary chuck 21 is connected to a nitrogen supply unit 29 via a pipe 28 located in the center of the rotary shaft 22. The nitrogen supply unit 29 delivers room-temperature nitrogen gas, supplied from equipment in the factory where the substrate processing system 100 is installed, to the rotary chuck 21 at a flow rate and timing corresponding to the gas supply command from the control unit 10, and circulates the nitrogen gas radially outward from the center of the rotary chuck on the lower surface Wb side of the substrate W. In this embodiment, nitrogen gas is used, but other inert gases may also be used. This also applies to the heated gas ejected from the central nozzle described later. Furthermore, "flow rate" refers to the amount of fluid, such as nitrogen gas, that moves per unit time.
旋轉機構2B不僅使旋轉吸盤21與基板W一體旋轉,為與該旋轉同步地使旋轉杯部31旋轉,具有動力傳遞部27(圖2)。動力傳遞部27具有由非磁性材料或樹脂構成之圓環構件27a(圖2)、內置於圓環構件之旋轉吸盤側磁鐵(省略圖示)、及內置於旋轉杯部31之一構成即下杯32之杯側磁鐵(省略圖示)。圓環構件27a如圖2所示安裝於旋轉軸部22,可與旋轉軸部22一起繞旋轉軸AX旋轉。更詳細而言,旋轉軸部22如圖2所示,於旋轉吸盤21之正下方位置具有朝徑向外側突出之凸緣部位(省略圖示)。且,圓環構件27a同心狀配置於凸緣部位,且藉由省略圖示之螺栓等進行連結固定。The rotating mechanism 2B not only rotates the rotating chuck 21 and substrate W integrally, but also includes a power transmission unit 27 (Figure 2) to synchronize the rotation of the rotating cup 31. The power transmission unit 27 comprises an annular member 27a (Figure 2) made of a non-magnetic material or resin, a rotating chuck-side magnet (not shown) embedded within the annular member, and a cup-side magnet (not shown) embedded within one of the components of the rotating cup 31, namely the lower cup 32. As shown in Figure 2, the annular member 27a is mounted on the rotating shaft 22 and rotates along with the rotating shaft 22 about the rotation axis AX. More specifically, as shown in FIG2 , the rotating shaft 22 has a flange portion (not shown) protruding radially outwardly just below the rotating suction cup 21. Furthermore, the annular member 27a is concentrically disposed on the flange portion and is secured thereto by bolts (not shown).
於圓環構件27a之外周緣部,複數個旋轉吸盤側磁鐵以旋轉軸AX為中心放射狀且以等角度間隔配置。本實施形態中,於彼此相鄰之2個旋轉吸盤側磁鐵中之一者,以外側及內側分別成為N極及S極之方式配置,於另一者,以外側及內側分別成為S極及N極之方式配置。On the outer periphery of the annular member 27a, a plurality of rotating chuck-side magnets are radially arranged around the rotation axis AX and spaced at equal angles. In this embodiment, one of the two adjacent rotating chuck-side magnets is arranged so that its outer side and inner side form a north pole and south pole, respectively, while the other is arranged so that its outer side and inner side form a south pole and north pole, respectively.
與該等旋轉吸盤側磁鐵同樣,複數個杯側磁鐵以旋轉軸AX為中心放射狀且以等角度間隔配置。該等杯側磁鐵內置於下杯32。下杯32係以下說明之防飛散機構3之構成零件,具有圓環形狀。即,下杯32具有可與圓環構件27a之外周面對向之內周面。該內周面之內徑大於圓環構件27a之外徑。且,一面使該內周面與圓環構件27a之外周面隔開規定間隔(=(上述內徑-上述外徑)/2)而對向,一面將下杯32與旋轉軸部22及圓環構件27a同心狀配置。於該下杯32之外周緣上表面設置有卡合銷及連結用磁鐵,藉此,上杯33與下杯32連結,該連結體作為旋轉杯部31發揮功能。Similar to the rotating suction cup side magnets, a plurality of cup side magnets are arranged radially with the rotation axis AX as the center and at equal angles. The cup side magnets are built into the lower cup 32. The lower cup 32 is a component of the anti-scattering mechanism 3 described below, and has a circular ring shape. That is, the lower cup 32 has an inner circumferential surface that can be opposite to the outer circumferential surface of the circular ring member 27a. The inner diameter of the inner circumferential surface is larger than the outer diameter of the circular ring member 27a. Moreover, while the inner circumferential surface is opposite to the outer circumferential surface of the circular ring member 27a at a specified interval (= (the above inner diameter - the above outer diameter) / 2), the lower cup 32 is arranged concentrically with the rotating shaft portion 22 and the circular ring member 27a. A locking pin and a connecting magnet are provided on the outer peripheral upper surface of the lower cup 32, thereby connecting the upper cup 33 and the lower cup 32, and the connecting body functions as the rotating cup portion 31.
下杯32於基座構件17之上表面上,藉由圖式中省略圖示之軸承,以於保持上述配置狀態下可繞旋轉軸AX旋轉地受支持。於該下杯32之內周緣部,如上述般,杯側磁鐵以旋轉軸AX為中心放射狀且以等角度間隔配置。又,關於彼此相鄰之2個杯側磁鐵之配置,亦與旋轉吸盤側磁鐵相同。即,於一者中,以外側及內側分別成為N極及S極之方式配置,於另一者中,以外側及內側分別成為S極及N極之方式配置。The lower cup 32 is supported on the upper surface of the base member 17 by bearings (not shown in the drawings) so that it can rotate about the rotation axis AX while maintaining the above-described configuration. As described above, cup-side magnets are radially arranged around the rotation axis AX and spaced at equal angles around the inner periphery of the lower cup 32. Furthermore, the arrangement of the two adjacent cup-side magnets is similar to that of the rotating chuck-side magnets. Specifically, in one case, the outer and inner sides are arranged to form north and south poles, respectively, while in the other case, the outer and inner sides are arranged to form south and north poles, respectively.
於如此構成之動力傳遞部27中,當圓環構件27a藉由馬達23與旋轉軸部22一起旋轉時,藉由旋轉吸盤側磁鐵與杯側磁鐵之間之磁力作用,使下杯32維持氣隙(圓環構件27a與下杯32之間隙)且朝與圓環構件27a相同之方向旋轉。藉此,旋轉杯部31繞旋轉軸AX旋轉。即,旋轉杯部31與基板W朝相同方向且同步旋轉。In the thus configured power transmission unit 27, when the annular member 27a rotates along with the rotating shaft 22 via the motor 23, the magnetic force between the rotating chuck-side magnet and the cup-side magnet causes the lower cup 32 to rotate in the same direction as the annular member 27a, maintaining an air gap (the gap between the annular member 27a and the lower cup 32). This causes the rotating cup 31 to rotate about the rotation axis AX. In other words, the rotating cup 31 and the substrate W rotate in the same direction and synchronously.
防飛散機構3具有可一面包圍保持於旋轉吸盤21之基板W之外周一面繞旋轉軸AX旋轉之旋轉杯部31、及以包圍旋轉杯部31之方式固定設置之固定杯部34。旋轉杯部31藉由將上杯33連結於下杯32,而設置為可一面包圍旋轉之基板W之外周一面繞旋轉軸AX旋轉。The anti-scattering mechanism 3 includes a rotating cup 31 that surrounds the outer periphery of a substrate W held on a rotating chuck 21 and rotates about a rotation axis AX, and a fixed cup 34 that surrounds the rotating cup 31. The rotating cup 31 is configured to surround the outer periphery of the rotating substrate W and rotate about the rotation axis AX by connecting an upper cup 33 to a lower cup 32.
圖5係顯示保持於旋轉吸盤之基板與旋轉杯部之尺寸關係之圖。圖6係顯示旋轉杯部及固定杯部之一部分之圖。下杯32具有圓環形狀。其之外徑較基板W之外徑大,自鉛直上方俯視時,於自由旋轉吸盤21保持之基板W朝徑向伸出之狀態下,下杯32配置為繞旋轉軸AX旋轉自如。於該伸出之區域,即下杯32之上表面周緣部,交替安裝有沿周向朝鉛直上方立設之卡合銷(省略圖示)與平板狀之下磁鐵(省略圖示)。FIG5 is a diagram showing the dimensional relationship between the substrate held on the rotating suction cup and the rotating cup portion. FIG6 is a diagram showing a portion of the rotating cup portion and the fixed cup portion. The lower cup 32 has a circular ring shape. Its outer diameter is larger than the outer diameter of the substrate W. When viewed from directly above the lead, when the substrate W held by the freely rotating suction cup 21 is radially extended, the lower cup 32 is configured to rotate freely around the rotation axis AX. In the extended area, that is, the peripheral portion of the upper surface of the lower cup 32, there are alternately mounted engaging pins (not shown) that are vertically arranged circumferentially toward the upper side of the lead and flat lower magnets (not shown).
另一方面,如圖2、圖3及圖5所示,上杯33具有下圓環部位331、上圓環部位332、及將其等連結之傾斜部位333。下圓環部位331之外徑D331與下杯32之外徑D32相同,下圓環部位331位於下杯32之周緣部321之鉛直上方。於下圓環部位331之下表面,於相當於卡合銷之鉛直上方之區域中,朝下方開口之凹部設置為可與卡合銷之前端部嵌合。又,於相當於下磁鐵之鉛直上方之區域中,安裝有上磁鐵。因此,於凹部及上磁鐵分別與卡合銷及下磁鐵對向之狀態下,上杯33可相對於下杯32卡合脫離。As shown in Figures 2, 3, and 5, the upper cup 33 has a lower annular portion 331, an upper annular portion 332, and an inclined portion 333 connecting them. The outer diameter D331 of the lower annular portion 331 is the same as the outer diameter D32 of the lower cup 32. The lower annular portion 331 is located directly above the lead of the peripheral portion 321 of the lower cup 32. On the lower surface of the lower annular portion 331, in the area directly above the lead of the locking pin, a downwardly opening recess is provided to engage with the front end of the locking pin. Furthermore, an upper magnet is mounted in the area directly above the lead of the lower magnet. Therefore, when the recess and the upper magnet are respectively opposite to the engaging pin and the lower magnet, the upper cup 33 can be engaged with and disengaged from the lower cup 32.
上杯33可藉由升降機構7於鉛直方向上升降。當上杯33藉由升降機構7朝上方移動時,於鉛直方向上,於上杯33與下杯32之間形成搬入搬出基板W用之搬送空間。另一方面,當上杯33藉由升降機構7朝下方移動時,凹部以被覆卡合銷之前端部之方式嵌合,而將上杯33相對於下杯32於水平方向上定位。又,上磁鐵接近下磁鐵,藉由於兩者之間產生之引力,上述定位後之上杯33及下杯32互相結合。藉此,如圖4之局部放大圖及圖6所示,於形成有沿水平方向延伸之間隙GPc之狀態下,上杯33及下杯32於鉛直方向上一體化。且,旋轉杯部31於保持形成有間隙GPc之狀態下繞旋轉軸AX自如地旋轉。The upper cup 33 can be raised and lowered in the vertical direction by the lifting mechanism 7. When the upper cup 33 is moved upward by the lifting mechanism 7, a transport space for carrying in and out the substrate W is formed between the upper cup 33 and the lower cup 32 in the vertical direction. On the other hand, when the upper cup 33 is moved downward by the lifting mechanism 7, the recess is engaged in a manner covering the front end portion of the locking pin, thereby positioning the upper cup 33 relative to the lower cup 32 in the horizontal direction. In addition, the upper magnet approaches the lower magnet, and due to the attraction generated between the two, the upper cup 33 and the lower cup 32 are combined with each other after the above positioning. Thereby, as shown in the partial enlarged view of Figure 4 and Figure 6, the upper cup 33 and the lower cup 32 are integrated in the vertical direction in a state where a gap GPc extending in the horizontal direction is formed. Furthermore, the rotating cup portion 31 freely rotates around the rotation axis AX while maintaining the gap GPc.
於旋轉杯部31中,如圖5所示,上圓環部位332之外徑D332略小於下圓環部位331之外徑D331。又,若比較下圓環部位331及上圓環部位332之內周面之直徑d331、d332,則下圓環部位331大於上圓環部位332,自鉛直上方俯視時,上圓環部位332之內周面位於下圓環部位331之內周面之內側。且,上圓環部位332之內周面與下圓環部位331之內周面遍及上杯33之全周由傾斜部位333連結。因此,傾斜部位333之內周面,即包圍基板W之面成為傾斜面334。即,如圖6所示,傾斜部位333可包圍旋轉之基板W之外周而捕集自基板W飛散之液滴,由上杯33及下杯32包圍之空間作為捕集空間SPc發揮功能。另,本實施形態中,如下稱呼鉛直方向Z上之各部之高度位置。即,如圖6所示,將保持於旋轉吸盤21之基板W之上表面(正面)之位置稱為「高度位置Zw」,將後續詳述之上表面保護加熱機構4之圓板部42之上表面之位置稱為「高度位置Z42」。In the rotating cup 31, as shown in Figure 5, the outer diameter D332 of the upper annular portion 332 is slightly smaller than the outer diameter D331 of the lower annular portion 331. Furthermore, if the inner diameters d331 and d332 of the lower annular portion 331 and upper annular portion 332 are compared, the lower annular portion 331 is larger than the upper annular portion 332. When viewed from directly above, the inner circumference of the upper annular portion 332 is located inward of the inner circumference of the lower annular portion 331. Furthermore, the inner circumferences of the upper annular portion 332 and the lower annular portion 331 are connected throughout the entire circumference of the upper cup 33 by a slanted portion 333. Therefore, the inner circumferential surface of the inclined portion 333, i.e., the surface surrounding the substrate W, becomes the inclined surface 334. Specifically, as shown in FIG6 , the inclined portion 333 can surround the outer circumference of the rotating substrate W and capture droplets scattered from the substrate W. The space surrounded by the upper cup 33 and the lower cup 32 functions as the capture space SPc. Furthermore, in this embodiment, the height positions of various components in the vertical direction Z are referred to below. Specifically, as shown in FIG6 , the position of the upper surface (front surface) of the substrate W held on the rotating chuck 21 is referred to as "height position Zw," and the position of the upper surface of the circular plate portion 42 of the upper surface protection and heating mechanism 4, which will be described in detail later, is referred to as "height position Z42."
且,面向捕集空間SPc之傾斜部位333自與下杯32連結而構成連結部位之下圓環部位331朝向基板W之周緣部之上方傾斜。因此,如圖6所示,自旋轉之基板W飛散之處理液之液滴於高度位置Zw被捕集至傾斜部位333之傾斜面334。且,該液滴可沿傾斜面334流動至上杯33之下端部,即下圓環部位331,進一步經由間隙GPc排出至旋轉杯部31之外側。Furthermore, the inclined portion 333, which faces the capture space SPc, is tilted upward from the lower annular portion 331, which is connected to the lower cup 32, toward the periphery of the substrate W. Therefore, as shown in FIG6 , droplets of processing liquid scattered from the spinning substrate W are captured at a height Zw on the inclined surface 334 of the inclined portion 333. These droplets then flow along the inclined surface 334 to the lower end of the upper cup 33, namely the lower annular portion 331, and are further discharged to the outside of the rotating cup portion 31 through the gap GPc.
固定杯部34以包圍旋轉杯部31之方式設置,形成排出空間SPe。固定杯部34具有受液部位341、及設置於受液部位341之內側之排氣部位342。受液部位341具有以面向間隙GPc之反基板側開口(圖6之左手側開口)之方式開口之杯構造。即,受液部位341之內部空間作為排出空間SPe發揮功能,經由間隙GPc與捕集空間SPc連通。因此,由旋轉杯部31捕集到之液滴與氣體成分一起經由間隙GPc引導至排出空間SPe。然後,液滴匯集至受液部位341之底部,自固定杯部34排出。The fixed cup portion 34 is arranged to surround the rotating cup portion 31 to form an exhaust space SPe. The fixed cup portion 34 has a liquid receiving portion 341 and an exhaust portion 342 arranged on the inner side of the liquid receiving portion 341. The liquid receiving portion 341 has a cup structure that is opened on the anti-substrate side facing the gap GPc (opening on the left-hand side of Figure 6). That is, the internal space of the liquid receiving portion 341 functions as the exhaust space SPe and is connected to the capture space SPc through the gap GPc. Therefore, the liquid droplets captured by the rotating cup portion 31 are guided to the exhaust space SPe through the gap GPc together with the gas components. Then, the liquid droplets gather at the bottom of the liquid receiving portion 341 and are discharged from the fixed cup portion 34.
另一方面,氣體成分匯集至排氣部位342。該排氣部位342經由劃分壁343與受液部位341劃分開。又,於劃分壁343之上方配置氣體引導部344。氣體引導部344自劃分壁343之正上方位置分別延設至排出空間SPe及排氣部位342之內部,藉此自上方覆蓋劃分壁343而形成具有迷宮構造之氣體成分之流通路徑。因此,流入至受液部位341之流體中之氣體成分經由上述流通路徑而匯集至排氣部位342。該排氣部位342與排氣部38連接。因此,藉由根據來自控制單元10之指令使排氣部38作動而調整固定杯部34之壓力,有效地排出排氣部位342內之氣體成分。又,藉由精密控制排氣部38,而調整排出空間SPe之壓力或流量。例如,排出空間SPe之壓力相較於捕集空間SPc之壓力降低。其結果,可有效地將捕集空間SPc內之液滴引入至排出空間SPe,促進液滴自捕集空間SPc移動。On the other hand, the gas components gather at the exhaust portion 342. The exhaust portion 342 is separated from the liquid receiving portion 341 by a partition wall 343. In addition, a gas guide portion 344 is arranged above the partition wall 343. The gas guide portion 344 extends from a position directly above the partition wall 343 to the exhaust space SPe and the interior of the exhaust portion 342, respectively, thereby covering the partition wall 343 from above to form a flow path for the gas components having a maze structure. Therefore, the gas components in the fluid flowing into the liquid receiving portion 341 are gathered at the exhaust portion 342 through the above-mentioned flow path. The exhaust portion 342 is connected to the exhaust portion 38. Therefore, by activating the exhaust section 38 based on commands from the control unit 10 and adjusting the pressure in the fixed cup 34, gas components within the exhaust portion 342 are effectively exhausted. Furthermore, by precisely controlling the exhaust section 38, the pressure or flow rate in the exhaust space SPe is adjusted. For example, the pressure in the exhaust space SPe can be lowered relative to the pressure in the capture space SPc. As a result, droplets in the capture space SPc can be effectively drawn into the exhaust space SPe, promoting the movement of droplets from the capture space SPc.
圖7係顯示上表面保護加熱機構之構成之外觀立體圖。圖8係圖7所示之上表面保護加熱機構之剖視圖。上表面保護加熱機構4具有配置於保持於旋轉吸盤21之基板W之上表面Wf之上方之阻斷板41。該阻斷板41具有以水平姿勢保持之圓板部42。圓板部42內置有由加熱器驅動部422驅動控制之加熱器421。該圓板部42具有較基板W稍短之直徑。且,以使圓板部42之下表面自上方覆蓋基板W之上表面Wf中除周緣部Ws以外之表面區域之方式,藉由支持構件43支持圓板部42。另,圖7中之符號44係設置於圓板部42之周緣部之切口部,這是為了防止與處理機構5中包含之處理液噴出噴嘴之干涉而設置。切口部44朝向徑向外側開口。FIG7 is an external perspective view showing the structure of the upper surface protection and heating mechanism. FIG8 is a cross-sectional view of the upper surface protection and heating mechanism shown in FIG7. The upper surface protection and heating mechanism 4 has a blocking plate 41 arranged above the upper surface Wf of the substrate W held on the rotating suction cup 21. The blocking plate 41 has a circular plate portion 42 held in a horizontal position. The circular plate portion 42 has a built-in heater 421 driven and controlled by a heater drive portion 422. The circular plate portion 42 has a diameter slightly shorter than that of the substrate W. The circular plate portion 42 is supported by a supporting member 43 so that the lower surface of the circular plate portion 42 covers the surface area of the upper surface Wf of the substrate W except for the peripheral portion Ws from above. 7 is a cutout portion provided on the periphery of the circular plate portion 42, which is provided to prevent interference with the treatment liquid ejection nozzle included in the treatment mechanism 5. The cutout portion 44 is open radially outward.
支持構件43之下端部安裝於圓板部42之中央部。以上下貫通支持構件43與圓板部42之方式,形成圓筒狀之貫通孔。又,中央噴嘴45上下插通於該貫通孔。如圖2所示,該中央噴嘴45經由配管46與加熱氣體供給部47連接。加熱氣體供給部47藉由加熱器471將自設置基板處理系統100之工廠之設備等供給之常溫氮氣加熱,並以與來自控制單元10之加熱氣體供給指令相應之流量及時序供給至基板處理部SP。The lower end of the support member 43 is mounted on the center of the circular plate portion 42. A cylindrical through hole is formed by vertically penetrating the support member 43 and the circular plate portion 42. In addition, the central nozzle 45 is inserted vertically into the through hole. As shown in FIG2 , the central nozzle 45 is connected to a heating gas supply unit 47 via a pipe 46. The heating gas supply unit 47 heats the room temperature nitrogen gas supplied from the equipment of the factory where the substrate processing system 100 is installed, and supplies it to the substrate processing unit SP at a flow rate and timing corresponding to the heating gas supply instruction from the control unit 10.
此處,若將加熱器471配置於腔室11之內部空間12,則自加熱器471放射之熱可能會對基板處理部SP,尤其是如後述般之處理機構5或基板觀察機構9造成不良影響。因此,於本實施形態中,如圖4所示,具有加熱器471之加熱氣體供給部47配置於腔室11之外側。又,於本實施形態中,於配管46之一部分安裝有帶狀加熱器48。帶狀加熱器48根據來自控制單元10之加熱指令而發熱,將於配管46內流動之氮氣加熱。If the heater 471 is placed within the interior space 12 of the chamber 11, the heat radiated from the heater 471 could adversely affect the substrate processing unit SP, particularly the processing mechanism 5 or substrate observation mechanism 9 described below. Therefore, in this embodiment, as shown in FIG4 , a heating gas supply unit 47 including the heater 471 is placed outside the chamber 11. Furthermore, in this embodiment, a ribbon heater 48 is installed in a portion of the piping 46. The ribbon heater 48 generates heat in response to a heating command from the control unit 10, thereby heating the nitrogen gas flowing within the piping 46.
將如此加熱後之氮氣(以下稱為「加熱氣體」)朝中央噴嘴45壓送,並自中央噴嘴45噴出。例如,如圖8所示,藉由於將圓板部42定位於接近保持於旋轉吸盤21之基板W之處理位置之狀態下供給加熱氣體,加熱氣體自由基板W之上表面Wf與內置加熱器之圓板部42夾持之空間SPa之中央部朝向周緣部流動。藉此,可抑制基板W周圍之氛圍進入基板W之上表面Wf。其結果,可有效地防止上述氛圍中包含之液滴被捲入由基板W與圓板部42夾持之空間SPa。又,可藉由加熱器421之加熱與加熱氣體將上表面Wf全體加熱,將基板W之面內溫度均勻化。藉此,可抑制基板W翹曲,使處理液之著液位置穩定化。The nitrogen gas heated in this manner (hereinafter referred to as "heating gas") is pressurized toward the central nozzle 45 and ejected from the central nozzle 45. For example, as shown in FIG8 , by supplying heating gas with the circular plate portion 42 positioned close to the processing position of the substrate W held on the rotary chuck 21, the heating gas flows from the center of the space SPa between the upper surface Wf of the substrate W and the circular plate portion 42 with the built-in heater toward the periphery. This prevents the atmosphere surrounding the substrate W from entering the upper surface Wf of the substrate W. As a result, droplets contained in the aforementioned atmosphere from being drawn into the space SPa between the substrate W and the circular plate portion 42 can be effectively prevented. Furthermore, the entire upper surface Wf can be heated by the heating of the heater 421 and the heating gas, thereby making the in-plane temperature of the substrate W uniform. Thereby, warping of the substrate W can be suppressed, and the landing position of the processing liquid can be stabilized.
如圖2所示,支持構件43之上端部固定於沿第1假想水平線VL1延伸之梁構件49。該梁構件49與安裝於基座構件17之上表面之升降機構7連接,根據來自控制單元10之指令藉由升降機構7而升降。例如,於圖2中,藉由將梁構件49定位於下方,經由支持構件43與梁構件49連結之圓板部42位於處理位置。另一方面,當升降機構7接收到來自控制單元10之上升指令而使梁構件49上升時,梁構件49、支持構件43及圓板部42一體上升,且上杯33亦連動而與下杯32分離並上升。藉此,旋轉吸盤21與上杯33及圓板部42之間較大,可進行對旋轉吸盤21之基板W之搬入搬出。As shown in FIG2 , the upper end of the support member 43 is fixed to a beam member 49 extending along the first imaginary horizontal line VL1. The beam member 49 is connected to the lifting mechanism 7 mounted on the upper surface of the base member 17 and is raised and lowered by the lifting mechanism 7 according to the command from the control unit 10. For example, in FIG2 , by positioning the beam member 49 at the bottom, the circular plate portion 42 connected to the beam member 49 via the support member 43 is located in the processing position. On the other hand, when the lifting mechanism 7 receives the raising command from the control unit 10 and raises the beam member 49, the beam member 49, the support member 43, and the circular plate portion 42 are raised as a whole, and the upper cup 33 is also linked to separate from the lower cup 32 and rise. As a result, the space between the rotary chuck 21, the upper cup 33 and the circular plate portion 42 is larger, allowing the substrate W to be moved in and out of the rotary chuck 21.
處理機構5具有配置於基板W之上表面側之處理液噴出噴嘴51F(圖4)、配置於基板W之下表面側之處理液噴出噴嘴51B(圖2)、及對處理液噴出噴嘴51F、51B供給處理液之處理液供給部52。以下,為區分上表面側之處理液噴出噴嘴51F與下表面側之處理液噴出噴嘴51B,而將其分別稱為「上表面處理噴嘴51F」及「下表面處理噴嘴51B」。又,於圖2中,圖示出2個處理液供給部52,但其等相同。The processing mechanism 5 includes a processing liquid ejection nozzle 51F ( FIG. 4 ) disposed on the upper surface side of the substrate W, a processing liquid ejection nozzle 51B ( FIG. 2 ) disposed on the lower surface side of the substrate W, and a processing liquid supply unit 52 that supplies processing liquid to the processing liquid ejection nozzles 51F and 51B. Hereinafter, to distinguish between the processing liquid ejection nozzle 51F on the upper surface side and the processing liquid ejection nozzle 51B on the lower surface side, they will be referred to as the "upper surface processing nozzle 51F" and the "lower surface processing nozzle 51B," respectively. FIG. 2 shows two processing liquid supply units 52, but they are equivalent.
圖9係顯示裝備於處理機構之上表面側之處理液噴出噴嘴、與裝備於杯清洗機構之上表面側之杯清洗液噴出噴嘴之立體圖,且係自斜下方向觀察各噴嘴之圖。本實施形態中,3根上表面處理噴嘴51F作為自保持於旋轉吸盤21之基板W之上方朝基板W之上表面Wf之周緣部Ws噴出處理液之上表面側之處理液噴出噴嘴而設置,且對其等連接處理液供給部52。又,處理液供給部52構成為可供給SC1、DHF、功能水(CO2水等)作為處理液,可自3根上表面處理噴嘴51F各自獨立地噴出SC1、DHF及功能水。Figure 9 is a perspective view of the processing liquid discharge nozzles mounted on the upper surface side of the processing mechanism and the cup cleaning liquid discharge nozzles mounted on the upper surface side of the cup cleaning mechanism, viewed from an oblique downward direction. In this embodiment, three upper surface processing nozzles 51F are provided as upper surface side processing liquid discharge nozzles that discharge processing liquid from above the substrate W held on the spin chuck 21 toward the peripheral portion Ws of the upper surface Wf of the substrate W. A processing liquid supply unit 52 is connected to these nozzles. Furthermore, the processing liquid supply unit 52 is configured to supply SC1, DHF, and functional water (such as CO2 water) as processing liquids. SC1, DHF, and functional water can be independently discharged from each of the three upper surface processing nozzles 51F.
於各上表面處理噴嘴51F中,如圖9之(a)欄所示,於前端下表面設置有噴出處理液之噴出口511。且,如圖4中之放大圖所示,以使各噴出口朝向基板W之上表面Wf之周緣部之姿勢將複數個(本實施形態中為3個)上表面處理噴嘴51F之下方部與圖7之局部放大俯視圖所示之清洗液噴出噴嘴201一起配置於圓板部42之切口部44,且以上表面處理噴嘴51F之上方部與清洗液噴出噴嘴201一體相對於噴嘴座53於徑向D1(相對於第1假想水平線VL1,噴嘴噴出仰角度傾斜45°且旋轉角度傾斜65°左右之方向)上移動自如地安裝。該噴嘴座53連接於噴嘴移動部54。In each upper surface treatment nozzle 51F, as shown in column (a) of FIG. 9 , a spray outlet 511 for spraying the treatment liquid is provided on the lower surface of the front end. As shown in the enlarged view of FIG4 , the lower portions of a plurality of (three in this embodiment) upper surface processing nozzles 51F are disposed in the cutout 44 of the circular plate portion 42, along with the cleaning liquid ejection nozzle 201 shown in the partially enlarged top view of FIG7 , with each nozzle outlet facing the periphery of the upper surface Wf of the substrate W. Furthermore, the upper portions of the upper surface processing nozzles 51F and the cleaning liquid ejection nozzles 201 are integrally mounted on a nozzle holder 53 so as to be freely movable in a radial direction D1 (a direction in which the nozzle ejection is tilted at an elevation angle of 45° and a rotational angle of approximately 65° relative to a first imaginary horizontal line VL1). The nozzle holder 53 is connected to a nozzle moving portion 54.
圖10係模式性顯示噴嘴移動部之構成之圖。圖11A係顯示進行斜面處理時之噴嘴位置之模式圖,圖11B係顯示進行杯清洗處理時之噴嘴位置之模式圖。另,於圖11A及圖11B中,(a)欄係噴出處理液或杯清洗液之噴嘴之側視圖,(b)欄係自上方觀察噴嘴之俯視圖。又,符號AR表示出自旋轉軸AX朝向噴出處理液或杯清洗液之噴嘴之徑向。Figure 10 schematically illustrates the structure of the nozzle moving unit. Figure 11A schematically illustrates the nozzle position during bevel processing, and Figure 11B schematically illustrates the nozzle position during cup cleaning. In Figures 11A and 11B, column (a) is a side view of the nozzle dispensing the processing liquid or cup cleaning liquid, and column (b) is a top view of the nozzle as viewed from above. Furthermore, the symbol AR indicates the radial direction from the rotation axis AX toward the nozzle dispensing the processing liquid or cup cleaning liquid.
如圖10所示,噴嘴移動部54於保持有噴嘴頭56(=上表面處理噴嘴51F+清洗液噴出噴嘴201+噴嘴座53)之狀態下,安裝於後續說明之升降部713之升降件713a之上端部。因此,當升降件713a根據來自控制單元10之升降指令而於鉛直方向上伸縮時,與之相應,噴嘴移動部54及噴嘴頭56於鉛直方向Z上移動。As shown in Figure 10, the nozzle moving unit 54 is mounted on the upper end of a lift member 713a of a lift unit 713 (described later) while retaining the nozzle head 56 (= upper surface treatment nozzle 51F + cleaning liquid discharge nozzle 201 + nozzle holder 53). Therefore, when the lift member 713a expands and contracts in the vertical direction in response to a lift command from the control unit 10, the nozzle moving unit 54 and the nozzle head 56 correspondingly move in the vertical direction Z.
又,於噴嘴移動部54中,基座構件541固定於升降件713a之上端部。於該基座構件541中安裝有直動致動器542。直動致動器542具有:馬達(以下稱為「噴嘴驅動馬達」)543,其作為徑向X上之噴嘴移動之驅動源發揮功能;及運動轉換機構545,其將與噴嘴驅動馬達543之旋轉軸連結之滾珠螺桿等旋轉體之旋轉運動轉換為直線運動,使滑塊544沿徑向D1往復移動。又,於運動轉換機構545中,為使滑塊544於徑向D1之移動穩定化,例如使用LM(Linear Motion:直線運動)導軌(註冊商標)等導軌。Furthermore, in the nozzle moving section 54, a base member 541 is fixed to the upper end of the lift member 713a. A linear actuator 542 is mounted on this base member 541. The linear actuator 542 comprises a motor (hereinafter referred to as the "nozzle drive motor") 543, which functions as the driving source for moving the nozzle in the radial direction X, and a motion conversion mechanism 545, which converts the rotational motion of a rotating body, such as a ball screw, connected to the rotating shaft of the nozzle drive motor 543 into linear motion, causing the slider 544 to reciprocate along the radial direction D1. Furthermore, in the motion conversion mechanism 545, in order to stabilize the movement of the slider 544 in the radial direction D1, a guide rail such as an LM (Linear Motion) guide rail (registered trademark) is used.
於如此沿徑向X往復驅動之滑塊544中,經由連結構件546連結有頭支持構件547。該頭支持構件547具有沿徑向X延伸之棒形狀。頭支持構件547之(+D1)方向端部固定於滑塊544。另一方面,頭支持構件547之(-D1)方向端部朝向旋轉吸盤21水平地延設,且於其前端部安裝有噴嘴頭56。因此,當噴嘴驅動馬達543根據來自控制單元10之噴嘴移動指令而旋轉時,滑塊544、頭支持構件547及噴嘴頭56與該旋轉方向對應而朝(+D1)方向或(-D1)方向一體移動與旋轉量對應之距離。其結果,將安裝於噴嘴頭56之上表面處理噴嘴51F於徑向D1上定位。例如,如圖10所示,當將上表面處理噴嘴51F定位於預設之起始位置時,設置於運動轉換機構545之彈簧構件548由滑塊544壓縮,對滑塊544朝(-D1)方向施加彈推力。藉此,可控制運動轉換機構545中包含之齒隙。即,由於運動轉換機構545具有導軌等機械零件,故事實上難以使沿著徑向D1之齒隙變為零,若不充分考慮上述情形,則徑向D1上之上表面處理噴嘴51F之定位精度會降低。因此,於本實施形態中,藉由設置彈簧構件548,而於使上表面處理噴嘴51F於起始位置靜止時,始終使齒隙偏向(-D1)方向。藉此,可獲得如下作用效果。In the slider 544 that is reciprocatingly driven in the radial direction X, a head support member 547 is connected via a connecting member 546. The head support member 547 has a rod shape extending in the radial direction X. The end of the head support member 547 in the (+D1) direction is fixed to the slider 544. On the other hand, the end of the head support member 547 in the (-D1) direction is horizontally extended toward the rotating suction cup 21, and the nozzle head 56 is mounted on the front end thereof. Therefore, when the nozzle drive motor 543 rotates according to the nozzle movement command from the control unit 10, the slider 544, the head support member 547 and the nozzle head 56 move integrally in the (+D1) direction or the (-D1) direction corresponding to the rotation direction by a distance corresponding to the rotation amount. As a result, the upper surface processing nozzle 51F mounted on the nozzle head 56 is positioned in the radial direction D1. For example, as shown in FIG10 , when the upper surface processing nozzle 51F is positioned in the preset starting position, the spring member 548 provided in the motion conversion mechanism 545 is compressed by the slider 544, applying a spring force to the slider 544 in the (-D1) direction. This allows the backlash within the motion conversion mechanism 545 to be controlled. Specifically, because the motion conversion mechanism 545 includes mechanical components such as guide rails, it is practically difficult to achieve zero backlash along the radial direction D1. If this consideration is not fully taken into account, the positioning accuracy of the upper surface processing nozzle 51F in the radial direction D1 will be reduced. Therefore, in this embodiment, by providing the spring member 548, when the upper surface processing nozzle 51F is stationary at the initial position, the tooth gap is always biased in the (-D1) direction.
根據來自控制單元10之噴嘴移動指令,噴嘴移動部54將3根上表面處理噴嘴51F及清洗液噴出噴嘴201一並朝徑向D1驅動。該噴嘴移動指令包含有與噴嘴移動距離相關之資訊。上表面處理噴嘴51F及清洗液噴出噴嘴201基於該資訊於徑向D1上移動指定之噴嘴移動距離。此處,於上述資訊為與斜面處理位置對應者時,如圖11A所示,將上表面處理噴嘴51F正確地定位於斜面處理位置(相當於本發明之「基板處理裝置」之一例)。另一方面,於上述資訊為與杯清洗處理位置對應者時,如圖11B所示,將清洗液噴出噴嘴201正確地定位於杯清洗位置。In response to a nozzle movement command from the control unit 10, the nozzle movement unit 54 drives the three upper surface processing nozzles 51F and the cleaning liquid ejection nozzle 201 in the radial direction D1. The nozzle movement command includes information related to the nozzle movement distance. Based on this information, the upper surface processing nozzle 51F and the cleaning liquid ejection nozzle 201 move the specified nozzle movement distance in the radial direction D1. Here, when the above information corresponds to the bevel processing position, as shown in Figure 11A, the upper surface processing nozzle 51F is correctly positioned at the bevel processing position (equivalent to an example of the "substrate processing device" of the present invention). On the other hand, when the above information corresponds to the cup cleaning processing position, as shown in FIG. 11B , the cleaning liquid spraying nozzle 201 is correctly positioned at the cup cleaning position.
定位於斜面處理位置之上表面處理噴嘴51F之噴出口511朝向基板W之上表面Wf之周緣部。且,當處理液供給部52根據來自控制單元10之供給指令將3種處理液中與供給指令對應之處理液供給至該處理液用之上表面處理噴嘴51F時,自上表面處理噴嘴51F將處理液自基板W之端面供給至預設之位置。另,於執行斜面處理之期間,停止對清洗液噴出噴嘴201供給杯清洗液。The nozzle outlet 511 of the upper surface processing nozzle 51F, positioned at the bevel processing position, faces the periphery of the upper surface Wf of the substrate W. Furthermore, when the processing liquid supply unit 52 supplies the processing liquid corresponding to the supply instruction among the three processing liquids to the upper surface processing nozzle 51F in accordance with the supply instruction from the control unit 10, the processing liquid is supplied from the upper surface processing nozzle 51F from the end surface of the substrate W to a predetermined position. Furthermore, during the bevel processing, the supply of the cup cleaning liquid to the cleaning liquid ejection nozzle 201 is stopped.
另一方面,定位於杯清洗位置之清洗液噴出噴嘴201之噴出口202朝向上杯33之傾斜部位333。該噴出口202以其口徑大於上表面處理噴嘴51F之噴出口511之口徑之方式,設置於清洗液噴出噴嘴201。且,於杯清洗液供給部203(圖2)根據來自控制單元10之供給指令將常溫DIW(Deionized Water:去離子水)等杯清洗液供給至清洗液噴出噴嘴201時,如圖11B所示,自清洗液噴出噴嘴201對傾斜部位333供給杯清洗液。本實施形態中,如圖11B所示,杯清洗液之噴出方向D33於水平面(XY平面)內相對於自旋轉軸AX朝向清洗液噴出噴嘴201之徑向AR,朝上杯33之旋轉方向Dr傾斜角度θ。因此,可有效防止於杯清洗液碰撞傾斜部位333時產生之杯清洗液之回彈返回至清洗液噴出噴嘴201。另,於本實施形態中,如圖11A所示,處理液之噴出亦相對於徑向AR朝上杯33之旋轉方向Dr傾斜角度θ,但角度θ為任意,例如亦可設定為θ=零。又,於執行杯清洗處理之期間,停止對上表面處理噴嘴51F供給處理液。Meanwhile, the nozzle 202 of the cleaning liquid discharge nozzle 201, positioned at the cup cleaning position, faces the inclined portion 333 of the upper cup 33. The nozzle 202 is positioned on the cleaning liquid discharge nozzle 201 so that its diameter is larger than the diameter of the nozzle 511 of the upper surface treatment nozzle 51F. Furthermore, when the cup cleaning liquid supply unit 203 ( FIG. 2 ) supplies a cup cleaning liquid such as room-temperature DIW (deionized water) to the cleaning liquid discharge nozzle 201 in response to a supply command from the control unit 10, the cup cleaning liquid is supplied from the cleaning liquid discharge nozzle 201 toward the inclined portion 333, as shown in FIG. 11B . In this embodiment, as shown in FIG11B , the cup cleaning liquid discharge direction D33 is tilted at an angle θ in the horizontal plane (XY plane) relative to the radial direction AR from the rotation axis AX toward the cleaning liquid discharge nozzle 201, and toward the rotation direction Dr of the upper cup 33. This effectively prevents the cup cleaning liquid from rebounding back toward the cleaning liquid discharge nozzle 201 when it collides with the tilted portion 333. Furthermore, in this embodiment, as shown in FIG11A , the treatment liquid discharge is also tilted at an angle θ relative to the radial direction AR toward the rotation direction Dr of the upper cup 33. However, the angle θ is arbitrary and can be set, for example, to θ = zero. Furthermore, during the cup cleaning process, the supply of treatment liquid to the upper surface treatment nozzle 51F is stopped.
又,氛圍分離機構6之下密閉杯構件61裝卸自如地固定於噴嘴移動部54之構成零件之一部分。即,於執行斜面處理時,上表面處理噴嘴51F及噴嘴座53經由噴嘴移動部54與下密閉杯構件61一體化,藉由升降機構7與下密閉杯構件61一起沿鉛直方向Z升降。Furthermore, the lower sealing cup member 61 of the atmosphere separation mechanism 6 is detachably fixed to a component of the nozzle moving unit 54. Specifically, when performing bevel processing, the upper surface processing nozzle 51F and the nozzle holder 53 are integrated with the lower sealing cup member 61 via the nozzle moving unit 54 and are raised and lowered along the vertical direction Z along with the lower sealing cup member 61 by the lifting mechanism 7.
圖12係顯示裝備於處理機構之下表面側之處理液噴出噴嘴及支持該噴嘴之噴嘴支持部之立體圖。本實施形態中,為向基板W之下表面Wb之周緣部噴出處理液,而將下表面處理噴嘴51B及噴嘴支持部57設置於保持於旋轉吸盤21之基板W之下方。噴嘴支持部57具有沿鉛直方向延設之薄壁之圓筒部位571、及於圓筒部位571之上端部朝徑向外側彎折而擴展之具有圓環形狀之凸緣部位572。圓筒部位571具有自如遊插至形成於圓環構件27a與下杯32之間之氣隙之形狀。且,如圖2所示,以圓筒部位571遊插於氣隙,且凸緣部位572位於保持於旋轉吸盤21之基板W與下杯32之間之方式,固定配置噴嘴支持部57。對凸緣部位572之上表面周緣部安裝有3個下表面處理噴嘴51B。各下表面處理噴嘴51B具有朝向基板W之下表面Wb之周緣部開口之噴出口(省略圖示),可噴出經由配管58自處理液供給部52供給之處理液。Figure 12 is a perspective view of the treatment liquid discharge nozzle and the nozzle support portion supporting the nozzle, mounted on the lower surface side of the treatment mechanism. In this embodiment, the lower surface treatment nozzle 51B and nozzle support portion 57 are positioned below the substrate W held on the rotary chuck 21 to discharge treatment liquid toward the periphery of the lower surface Wb of the substrate W. The nozzle support portion 57 comprises a thin-walled cylindrical portion 571 extending in the vertical direction and a circular flange portion 572 that is radially bent and expanded at the upper end of the cylindrical portion 571. The cylindrical portion 571 is shaped to freely fit into the air gap formed between the annular member 27a and the lower cup 32. As shown in FIG2 , the nozzle support portion 57 is fixedly arranged such that the cylindrical portion 571 is interposed in the air gap and the flange portion 572 is positioned between the substrate W held on the rotary chuck 21 and the lower cup 32. Three lower surface processing nozzles 51B are mounted around the upper surface of the flange portion 572. Each lower surface processing nozzle 51B has a nozzle opening (not shown) facing the periphery of the lower surface Wb of the substrate W and is capable of dispensing a processing liquid supplied from the processing liquid supply portion 52 via a pipe 58.
藉由自該等上表面處理噴嘴51F及下表面處理噴嘴51B噴出之處理液,對基板W之周緣部執行斜面處理。又,於基板W之下表面側,將凸緣部位572延設至周緣部Ws附近。因此,經由配管28供給至下表面側之氮氣沿凸緣部位572流入至捕集空間SPc。其結果,有效地抑制液滴自捕集空間SPc逆流至基板W。The processing liquid ejected from the upper surface processing nozzle 51F and the lower surface processing nozzle 51B performs a bevel treatment on the periphery of the substrate W. Furthermore, a flange portion 572 is provided on the lower surface of the substrate W, extending to the vicinity of the peripheral portion Ws. Therefore, nitrogen gas supplied to the lower surface via the pipe 28 flows along the flange portion 572 into the collection space SPc. As a result, backflow of liquid droplets from the collection space SPc to the substrate W is effectively suppressed.
氛圍分離機構6具有下密閉杯構件61、及上密閉杯構件62。下密閉杯構件61及上密閉杯構件62均具有上下開口之筒形狀。且,其等之內徑大於旋轉杯部31之外徑,氛圍分離機構6配置為自上方完全包圍旋轉吸盤21、保持於旋轉吸盤21之基板W、旋轉杯部31及上表面保護加熱機構4,更詳細而言,如圖2所示,上密閉杯構件62以其上方開口自下方覆蓋頂壁11f之開口11f1之方式,固定配置於沖孔板14之正下方位置。因此,導入至腔室11內之清潔空氣之降流被分為通過上密閉杯構件62之內部者、與通過上密閉杯構件62之外側者。The atmosphere separation mechanism 6 comprises a lower sealed cup member 61 and an upper sealed cup member 62. Both the lower sealed cup member 61 and the upper sealed cup member 62 are cylindrical in shape, with openings at the top and bottom. Their inner diameters are larger than the outer diameter of the rotating cup member 31. The atmosphere separation mechanism 6 is configured to completely surround the rotating chuck 21, the substrate W held thereon, the rotating cup member 31, and the upper surface protection and heating mechanism 4 from above. More specifically, as shown in FIG2 , the upper sealed cup member 62 is fixedly positioned directly below the perforated plate 14, with its upper opening covering the opening 11f1 of the top wall 11f from below. Therefore, the downflow of clean air introduced into the chamber 11 is divided into the downflow passing through the interior of the upper sealing cup member 62 and the downflow passing through the exterior of the upper sealing cup member 62 .
又,上密閉杯構件62之下端部具有向內側折入之具有圓環形狀之凸緣部621。於該凸緣部621之上表面安裝有O形環63。於上密閉杯構件62之內側,下密閉杯構件61於鉛直方向上移動自如地配置。The lower end of the upper sealing cup member 62 has an inwardly folded, annular flange 621. An O-ring 63 is mounted on the upper surface of the flange 621. Inside the upper sealing cup member 62, the lower sealing cup member 61 is disposed so as to be freely movable in the vertical direction.
下密閉杯構件61之上端部具有向外側彎折而擴展之具有圓環形狀之凸緣部611。該凸緣部611於自鉛直上方俯視時,與凸緣部621重疊。因此,當下密閉杯構件61下降時,如圖4中之局部放大圖所示,下密閉杯構件61之凸緣部611隔著O形環63由上密閉杯構件62之凸緣部621卡止。藉此,下密閉杯構件61被定位於下限位置。於該下限位置,於鉛直方向上,上密閉杯構件62與下密閉杯構件61相連,將導入至上密閉杯構件62之內部之降流引導至保持於旋轉吸盤21之基板W。The upper end of the lower sealing cup member 61 has an outwardly bent and expanded annular flange 611. When viewed from directly above, flange 611 overlaps flange 621. Therefore, when the lower sealing cup member 61 descends, as shown in the partially enlarged view in Figure 4, flange 611 of the lower sealing cup member 61 is locked by flange 621 of the upper sealing cup member 62 via O-ring 63. This positions the lower sealing cup member 61 at its lower limit. At the lower limit position, the upper closed cup member 62 is connected to the lower closed cup member 61 in the vertical direction, guiding the downflow introduced into the interior of the upper closed cup member 62 to the substrate W held on the rotary chuck 21.
下密閉杯構件61之下端部具有向外側折入之具有圓環形狀之凸緣部612。該凸緣部612於自鉛直上方俯視時,與固定杯部34之上端部(受液部位341之上端部)重疊。因此,於上述下限位置中,如圖5中之局部放大圖所示,下密閉杯構件61之凸緣部612隔著O形環64由固定杯部34卡止。藉此,於鉛直方向上,下密閉杯構件61與固定杯部34相連,且由上密閉杯構件62、下密閉杯構件61及固定杯部34形成密閉空間12a。於該密閉空間12a內,可對基板W執行斜面處理。即,藉由將下密閉杯構件61定位於下限位置,密閉空間12a與密閉空間12a之外側空間12b分離(氛圍分離)。因此,可不受外側氛圍之影響而穩定地進行斜面處理。又,為進行斜面處理而使用處理液,但可確實地防止處理液自密閉空間12a洩漏至外側空間12b。因此,配置於外側空間12b之零件之選定、設計之自由度變高。The lower end of the lower sealed cup member 61 has a flange portion 612 with a circular ring shape that is folded inwards outwards. When viewed from above, the flange portion 612 overlaps with the upper end portion of the fixed cup portion 34 (the upper end portion of the liquid receiving portion 341). Therefore, in the above-mentioned lower limit position, as shown in the partial enlarged view in Figure 5, the flange portion 612 of the lower sealed cup member 61 is clamped by the fixed cup portion 34 via the O-ring 64. Thereby, in the vertical direction, the lower sealed cup member 61 is connected to the fixed cup portion 34, and a closed space 12a is formed by the upper sealed cup member 62, the lower sealed cup member 61 and the fixed cup portion 34. In the closed space 12a, the substrate W can be subjected to bevel processing. Specifically, by positioning the lower sealing cup member 61 at its lower limit, the enclosed space 12a is separated from the space 12b outside of the enclosed space 12a (atmosphere separation). This allows for stable bevel processing without being affected by the external atmosphere. Furthermore, while a treatment liquid is used for bevel processing, leakage from the enclosed space 12a to the external space 12b can be reliably prevented. This provides greater freedom in the selection and design of components placed in the external space 12b.
下密閉杯構件61構成為亦可朝鉛直上方移動。又,於鉛直方向上之下密閉杯構件61之中間部,如上所述,經由噴嘴移動部54之頭支持構件547固定噴嘴頭56(=上表面處理噴嘴51F+清洗液噴出噴嘴201+噴嘴座53)。又,除此以外,如圖2及圖4所示,還經由梁構件49將上表面保護加熱機構4固定於下密閉杯構件61之中間部。即,如圖4所示,下密閉杯構件61於周向上互不相同之3個部位分別與梁構件49之一端部、梁構件49之另一端部及頭支持構件547連接。且,藉由由升降機構7使梁構件49之一端部、梁構件49之另一端部及頭支持構件547升降,下密閉杯構件61亦隨之升降。The lower sealed cup member 61 is also configured to move vertically upward. Furthermore, as described above, the nozzle head 56 (= upper surface treatment nozzle 51F + cleaning liquid discharge nozzle 201 + nozzle holder 53) is secured to the center of the lower sealed cup member 61 in the vertical direction via the head support member 547 of the nozzle moving unit 54. Furthermore, as shown in Figures 2 and 4 , the upper surface protection and heating mechanism 4 is also secured to the center of the lower sealed cup member 61 via the beam member 49. Specifically, as shown in Figure 4 , the lower sealed cup member 61 is connected to one end of the beam member 49, the other end of the beam member 49, and the head support member 547 at three different locations in the circumferential direction. Furthermore, by raising and lowering one end of the beam member 49, the other end of the beam member 49 and the head support member 547 by the lifting mechanism 7, the lower closed cup member 61 is also raised and lowered accordingly.
於該下密閉杯構件61之內周面中,如圖2及圖4所示,朝向內側突設複數根(4根)突起部613,作為可與上杯33卡合之卡合部位。各突起部613延設至上杯33之上圓環部位332之下方空間。又,各突起部613以於下密閉杯構件61被定位於下限位置之狀態下自上杯33之上圓環部位332朝下方離開之方式安裝。且,藉由下密閉杯構件61之上升,各突起部613可自下方卡合於上圓環部位332。於該卡合後,亦可藉由使下密閉杯構件61進一步上升而使上杯33與下杯32脫離。As shown in Figures 2 and 4, a plurality of (4) protrusions 613 are provided on the inner circumference of the lower sealed cup member 61, which serve as engaging portions that can engage with the upper cup 33. Each protrusion 613 extends to the space below the upper annular portion 332 of the upper cup 33. In addition, each protrusion 613 is installed so as to move downward away from the upper annular portion 332 of the upper cup 33 when the lower sealed cup member 61 is positioned at the lower limit position. Moreover, by raising the lower sealed cup member 61, each protrusion 613 can engage with the upper annular portion 332 from below. After the engagement, the upper cup 33 and the lower cup 32 can be separated by further raising the lower sealed cup member 61.
本實施形態中,於下密閉杯構件61藉由升降機構7開始與上表面保護加熱機構4及噴嘴頭56一起上升後,上杯33亦一起上升。藉此,上杯33、上表面保護加熱機構4及噴嘴頭56自旋轉吸盤21朝上方離開。藉由下密閉杯構件61移動至退避位置,形成用以供基板搬送機器人111之手對旋轉吸盤21進行接取之搬送空間。且,可經由該搬送空間執行對旋轉吸盤21裝載基板W及自旋轉吸盤21卸載基板W。如此,於本實施形態中,可藉由升降機構7對下密閉杯構件61之最小限度之上升,而對旋轉吸盤21進行基板W之接取。In this embodiment, after the lower sealed cup assembly 61 begins to rise along with the upper surface protection and heating mechanism 4 and the nozzle head 56 via the lifting mechanism 7, the upper cup 33 also rises. This causes the upper cup 33, the upper surface protection and heating mechanism 4, and the nozzle head 56 to move upward away from the spin chuck 21. By moving the lower sealed cup assembly 61 to a retracted position, a transfer space is created for the hand of the substrate transfer robot 111 to access the spin chuck 21. Furthermore, substrates W can be loaded onto and unloaded from the spin chuck 21 via this transfer space. Thus, in this embodiment, the substrate W can be received by the rotary chuck 21 by minimally raising the lower closed cup member 61 by the lifting mechanism 7.
升降機構7具有2個升降驅動部71、72。於升降驅動部71中,第1升降馬達(省略圖示)安裝於基座構件17之第1升降安裝部位173(圖3)。第1升降馬達根據來自控制單元10之驅動指令而作動,產生旋轉力。2個升降部712、713連結於該第1升降馬達。升降部712、713自第1升降馬達同時受到上述旋轉力。然後,升降部712根據第1升降馬達之旋轉量,使支持梁構件49之一端部之支持構件491沿鉛直方向Z升降。又,升降部713根據第1升降馬達之旋轉量,使支持噴嘴頭56之頭支持構件547沿鉛直方向Z升降。The lifting mechanism 7 has two lifting drive parts 71 and 72. In the lifting drive part 71, the first lifting motor (not shown) is installed on the first lifting installation part 173 (Figure 3) of the base member 17. The first lifting motor is actuated according to the driving instruction from the control unit 10 to generate a rotational force. The two lifting parts 712 and 713 are connected to the first lifting motor. The lifting parts 712 and 713 are simultaneously subjected to the above-mentioned rotational force from the first lifting motor. Then, the lifting part 712 lifts the support member 491 at one end of the support beam member 49 in the vertical direction Z according to the rotation amount of the first lifting motor. In addition, the lifting part 713 lifts the head support member 547 supporting the nozzle head 56 in the vertical direction Z according to the rotation amount of the first lifting motor.
於升降驅動部72中,第2升降馬達(省略圖示)安裝於基座構件17之第2升降安裝部位174(圖3)。升降部722連結於第2升降馬達。第2升降馬達根據來自控制單元10之驅動指令而作動,產生旋轉力,施加給升降部722。升降部722根據第2升降馬達之旋轉量,使支持梁構件49之另一端部之支持構件492沿鉛直方向升降。In the lift drive unit 72, a second lift motor (not shown) is mounted on the second lift mounting portion 174 of the base member 17 (Figure 3). The lift unit 722 is connected to the second lift motor. The second lift motor is actuated by a drive command from the control unit 10, generating a rotational force that is applied to the lift unit 722. The lift unit 722 vertically raises and lowers the support member 492 at the other end of the support beam member 49 based on the amount of rotation of the second lift motor.
升降驅動部71、72相對於下密閉杯構件61之側面,使於其周向上分別固定於互不相同之3個部位之支持構件491、492、54同步地沿鉛直方向移動。因此,可穩定地進行上表面保護加熱機構4、噴嘴頭56及下密閉杯構件61之升降。又,隨著下密閉杯構件61之升降,亦可使上杯33穩定地升降。Lifting actuators 71 and 72 move support members 491, 492, and 54, which are fixed at three different locations on the circumference of the lower sealed cup member 61, in a synchronous, vertical motion. This ensures stable lifting and lowering of the upper surface protection and heating mechanism 4, nozzle head 56, and lower sealed cup member 61. Furthermore, as the lower sealed cup member 61 rises and falls, the upper cup 33 also rises and falls stably.
定心機構8於停止泵26之吸引之期間(即基板W可於旋轉吸盤21之上表面上水平移動之期間),執行定心處理。藉由該定心處理消除基板W相對於旋轉軸AX之偏心,基板W之中心與旋轉軸AX一致。如圖4所示,定心機構8具有:單抵接部81,其於相對於第1假想水平線VL1傾斜40°左右之抵接移動方向D2上,相對於旋轉軸AX配置於搬送用開口11b1側;多抵接部82,其配置於保養用開口11d1側;及定心驅動部83,其使單抵接部81及多抵接部82朝抵接移動方向D2移動。The centering mechanism 8 performs a centering process while the pump 26 is stopped (i.e., while the substrate W is allowed to move horizontally on the upper surface of the rotary chuck 21). This centering process eliminates any eccentricity of the substrate W relative to the rotation axis AX, aligning the center of the substrate W with the rotation axis AX. As shown in FIG4 , the centering mechanism 8 comprises a single abutting portion 81, which is positioned on the transport opening 11b1 side relative to the rotation axis AX in the abutting movement direction D2, which is inclined approximately 40° relative to the first imaginary horizontal line VL1; a multiple abutting portion 82, which is positioned on the maintenance opening 11d1 side; and a centering drive portion 83, which moves the single abutting portion 81 and the multiple abutting portion 82 in the abutting movement direction D2.
單抵接部81具有與抵接移動方向D2平行延設之形狀,以可於旋轉吸盤21側之前端部與旋轉吸盤21上之基板W之端面抵接之方式加工。另一方面,多抵接部82於自鉛直上方俯視時具有大致Y字形狀,以可於旋轉吸盤21側之二股部位之各前端部與旋轉吸盤21上之基板W之端面抵接之方式加工。該等單抵接部81及多抵接部82於抵接移動方向D2上移動自如。The single abutting portion 81 is shaped to extend parallel to the abutting movement direction D2 and is configured to abut the end surface of the substrate W on the rotating chuck 21 at its leading end. Meanwhile, the multiple abutting portion 82 is substantially Y-shaped when viewed from above and is configured to abut the end surface of the substrate W on the rotating chuck 21 at its leading end at each of its two prongs. Both the single abutting portion 81 and the multiple abutting portion 82 are freely movable in the abutting movement direction D2.
定心驅動部83具有用以使單抵接部81朝抵接移動方向D2移動之單移動部831、及用以使多抵接部82朝抵接移動方向D2移動之多移動部832。單移動部831安裝於基座構件17之單移動安裝部位175(圖3),多移動部832安裝於基座構件17之多移動安裝部位176(圖3)。於不執行基板W之定心處理之期間,定心驅動部83如圖4所示,將單抵接部81及多抵接部82與旋轉吸盤21隔開而定位。因此,單抵接部81及多抵接部82離開搬送路徑TP,可有效地防止單抵接部81及多抵接部82與對腔室11搬入搬出之基板W干涉。The centering drive 83 includes a single movable portion 831 for moving the single contact portion 81 in the contact movement direction D2, and a multi-movable portion 832 for moving the multi-contact portion 82 in the contact movement direction D2. The single movable portion 831 is mounted on the single movable mounting portion 175 ( FIG. 3 ) of the base member 17, while the multi-movable portion 832 is mounted on the multi-movable mounting portion 176 ( FIG. 3 ) of the base member 17. When not centering the substrate W, the centering drive 83 separates the single contact portion 81 and the multi-contact portion 82 from the rotary chuck 21, as shown in FIG. 4 . Therefore, the single contact portion 81 and the multiple contact portions 82 are separated from the transport path TP, which can effectively prevent the single contact portion 81 and the multiple contact portions 82 from interfering with the substrate W being carried in and out of the chamber 11.
另一方面,於執行基板W之定心處理時,根據來自控制單元10之定心指令,單移動部831使單抵接部81朝旋轉軸AX移動,且多移動部832使多抵接部82朝旋轉軸AX移動。藉此,基板W之中心與旋轉軸AX一致。Meanwhile, when centering the substrate W, the single-moving portion 831 moves the single-contact portion 81 toward the rotation axis AX, and the multiple-moving portion 832 moves the multiple-contact portion 82 toward the rotation axis AX in response to a centering command from the control unit 10. This aligns the center of the substrate W with the rotation axis AX.
基板觀察機構9具有光源部91、攝像部92、觀察頭93、及觀察頭驅動部94。光源部91及攝像部92於基座構件17之光學零件安裝位置177(圖3)並設。光源部91根據來自控制單元10之照明指令向觀察位置照射照明光。該觀察位置係與基板W之周緣部Ws對應之位置,相當於將觀察頭93定位之位置(省略圖示)。The substrate observation mechanism 9 includes a light source 91, an imaging unit 92, an observation head 93, and an observation head driver 94. The light source 91 and the imaging unit 92 are located side by side at the optical component mounting position 177 ( FIG. 3 ) of the base member 17. The light source 91 illuminates the observation position based on illumination commands from the control unit 10. This observation position corresponds to the peripheral portion Ws of the substrate W and corresponds to the position where the observation head 93 is positioned (not shown).
觀察頭93可於觀察位置、與自觀察位置朝基板W之徑向外側離開之隔開位置之間往復移動。觀察頭驅動部94連接於該觀察頭93。觀察頭驅動部94於基座構件17之頭驅動位置178(圖3)安裝於基座構件17。且,觀察頭驅動部94根據來自控制單元10之頭移動指令,使觀察頭93沿相對於第1假想水平線VL1傾斜10°左右之頭移動方向D3往復移動。更具體而言,於不執行基板W之觀察處理之期間,觀察頭驅動部94將觀察頭93移動至退避位置而進行定位。因此,觀察頭93離開搬送路徑TP,可有效地防止觀察頭93與對腔室11搬入搬出之基板W干涉。另一方面,於執行基板W之觀察處理時,根據來自控制單元10之基板觀察指令,由觀察頭驅動部94使觀察頭93移動至觀察位置。The observation head 93 can reciprocate between an observation position and a spaced-apart position radially away from the observation position toward the outside of the substrate W. The observation head driver 94 is connected to the observation head 93. The observation head driver 94 is mounted on the base member 17 at a head drive position 178 ( FIG. 3 ) of the base member 17. Furthermore, the observation head driver 94 reciprocates the observation head 93 along a head movement direction D3 tilted approximately 10° relative to the first imaginary horizontal line VL1 in accordance with a head movement instruction from the control unit 10. More specifically, when the observation process of the substrate W is not being performed, the observation head driver 94 moves the observation head 93 to a retreat position for positioning. Therefore, the observation head 93 leaves the transport path TP, effectively preventing interference between the observation head 93 and the substrates W being loaded into and out of the chamber 11. Meanwhile, when performing observation processing on the substrate W, the observation head driver 94 moves the observation head 93 to the observation position based on a substrate observation command from the control unit 10.
當將如此構成之觀察頭93定位於觀察位置,且於定位狀態下,光源部91依照來自控制單元10之照明指令而點亮時,照明光照射至觀察頭93之照明區域。藉此,藉由來自觀察頭93之擴散照明光,將基板W之周緣部Ws及其相鄰區域照明。又,將於周緣部Ws及其相鄰區域反射之反射光經由觀察頭93導光至攝像部92。When the observation head 93, thus configured, is positioned at the observation position and, in this positioned state, the light source unit 91 is illuminated in accordance with an illumination command from the control unit 10, illumination light is directed to the illumination area of the observation head 93. The diffuse illumination light from the observation head 93 thereby illuminates the peripheral portion Ws of the substrate W and its adjacent areas. Furthermore, light reflected from the peripheral portion Ws and its adjacent areas is guided through the observation head 93 to the imaging unit 92.
攝像部92具有由物體側遠心透鏡構成之觀察透鏡系統、及CMOS(Complementary Metal Oxide Semiconductor:互補金屬氧化物半導體)相機。因此,自觀察頭93導光之反射光中僅與觀察透鏡系統之光軸平行之光線入射至CMOS相機之感測器面,將基板W之周緣部Ws及相鄰區域之像成像於感測器面上。如此,攝像部92拍攝基板W之周緣部Ws及相鄰區域,取得基板W之上表面圖像、側面圖像及下表面圖像。然後,攝像部92將表示該圖像之圖像資料發送至控制單元10。The imaging unit 92 includes an observation lens system consisting of an object-side telecentric lens and a CMOS (Complementary Metal Oxide Semiconductor) camera. Therefore, of the reflected light guided from the observation head 93, only the light parallel to the optical axis of the observation lens system is incident on the sensor surface of the CMOS camera, forming an image of the peripheral portion Ws of the substrate W and the adjacent area on the sensor surface. In this way, the imaging unit 92 captures the peripheral portion Ws and the adjacent area of the substrate W, acquiring images of the top, side, and bottom surfaces of the substrate W. The imaging unit 92 then transmits image data representing these images to the control unit 10.
控制單元10具有運算處理部10A、記憶部10B、讀取部10C、圖像處理部10D、驅動控制部10E、通信部10F及排氣控制部10G。記憶部10B由硬碟驅動器等構成,記憶有用以藉由上述基板處理裝置1執行斜面處理之程式。該程式例如記憶於電腦可讀取之記錄媒體RM(例如,光碟、磁碟、磁光碟等)中,藉由讀取部10C自記錄媒體RM讀出,而保存於記憶部10B。又,該程式之提供並非限定於記錄媒體RM者,例如亦可以經由電性通信線路提供該程式之方式構成。圖像處理部10D對由基板觀察機構9拍攝到之圖像實施各種處理。驅動控制部10E控制基板處理裝置1之各驅動部。通信部10F與統合控制基板處理系統100之各部之控制部等進行通信。排氣控制部10G控制排氣部38。The control unit 10 includes a processing unit 10A, a memory unit 10B, a readout unit 10C, an image processing unit 10D, a drive control unit 10E, a communication unit 10F, and an exhaust control unit 10G. The memory unit 10B is composed of a hard drive or the like and stores a program for executing bevel processing using the substrate processing apparatus 1. The program is stored on a computer-readable recording medium RM (e.g., an optical disk, a magnetic disk, a magneto-optical disk, etc.), read from the recording medium RM by the readout unit 10C, and stored in the memory unit 10B. Furthermore, provision of the program is not limited to the recording medium RM; for example, the program may also be provided via an electrical communication line. The image processing unit 10D performs various processes on the image captured by the substrate observation mechanism 9. The drive control unit 10E controls the various drive units of the substrate processing apparatus 1. The communication unit 10F communicates with the control unit that collectively controls the various units of the substrate processing system 100. The exhaust control unit 10G controls the exhaust unit 38.
又,於控制單元10,連接顯示各種資訊之顯示部10H(例如顯示器等)或受理來自操作者之輸入之輸入部10J(例如鍵盤及滑鼠等)。Furthermore, the control unit 10 is connected to a display unit 10H (such as a monitor) for displaying various information or an input unit 10J (such as a keyboard and a mouse) for accepting input from an operator.
運算處理部10A由具有CPU(=Central Processing Unit:中央處理單元)或RAM(=Random Access Memory:隨機存取記憶器)等之電腦構成,依照記憶於記憶部10B之程式如以下般控制基板處理裝置1之各部,而執行斜面處理。以下,參考圖13且對基板處理裝置1之斜面處理及杯清洗處理進行說明。The processing unit 10A is comprised of a computer equipped with a CPU (Central Processing Unit) or RAM (Random Access Memory). It controls various components of the substrate processing apparatus 1 according to a program stored in the memory unit 10B, as described below, to perform bevel processing. The following describes the bevel processing and cup cleaning processes of the substrate processing apparatus 1 with reference to FIG. 13 .
圖13係顯示藉由圖2所示之基板處理裝置執行作為基板處理動作之一例之斜面處理之流程圖。於藉由基板處理裝置1對基板W實施斜面處理時,運算處理部10A藉由升降驅動部71、72,使下密閉杯構件61、噴嘴頭56、梁構件49、支持構件43及圓板部42一體上升。於該下密閉杯構件61之上升中途,突起部613與上杯33之上圓環部位332卡合,之後,上杯33與下密閉杯構件61、噴嘴頭56、梁構件49、支持構件43及圓板部42一起上升而定位於退避位置。藉此,於旋轉吸盤21之上方形成足夠基板搬送機器人111之手(省略圖示)進入之搬送空間。又,運算處理部10A藉由定心驅動部83使單移動部831及多抵接部82移動至離開旋轉吸盤21之退避位置,且藉由觀察頭驅動部94使觀察頭93移動至離開旋轉吸盤21之待機位置。藉此,如圖4所示,配置於旋轉吸盤21周圍之構成要件中之噴嘴頭56、光源部91、攝像部92、馬達23及多抵接部82位於較第1假想水平線VL1靠保養用開口11d1側(該圖之下側)。又,單移動部831及觀察頭93位於較第1假想水平線VL1靠搬送用開口11b1側,但偏離沿著搬送路徑TP之基板W之移動區域。本實施形態中,由於採用此種佈局構造,故於對腔室11搬入搬出基板W時,可有效地防止配置於旋轉吸盤21周圍之構成要件與基板W干涉。FIG13 is a flow chart illustrating a bevel treatment performed as an example of a substrate processing operation by the substrate processing apparatus shown in FIG2 . When performing bevel treatment on a substrate W in the substrate processing apparatus 1 , the computation processing unit 10A uses the elevating drive units 71 and 72 to collectively raise the lower sealed cup member 61, the nozzle head 56, the beam member 49, the support member 43, and the circular plate portion 42. During the ascent of the lower sealed cup member 61, the protrusion 613 engages with the upper annular portion 332 of the upper cup 33. Subsequently, the upper cup 33, along with the lower sealed cup member 61, the nozzle head 56, the beam member 49, the support member 43, and the circular plate portion 42, rises and is positioned in a retracted position. This creates a transfer space above the rotary chuck 21 sufficient for the hand (not shown) of the substrate transfer robot 111 to enter. Furthermore, the processing unit 10A uses the centering drive unit 83 to move the single moving unit 831 and the multiple contacting unit 82 to a retreat position away from the rotary chuck 21, and uses the observation head drive unit 94 to move the observation head 93 to a standby position away from the rotary chuck 21. Consequently, as shown in FIG4 , the nozzle head 56 , light source unit 91 , imaging unit 92 , motor 23 , and multiple contacting unit 82 , among the components disposed around the rotary chuck 21 , are positioned closer to the maintenance opening 11d1 (the lower side in the figure) relative to the first imaginary horizontal line VL1 . Furthermore, the single moving portion 831 and the observation head 93 are positioned closer to the transfer opening 11b1 than the first imaginary horizontal line VL1, but offset from the movement area of the substrate W along the transfer path TP. In this embodiment, this layout effectively prevents interference between components surrounding the rotary chuck 21 and the substrate W when the substrate W is loaded into or unloaded from the chamber 11.
如此,於確認搬送空間之形成完成及與基板W之防止干涉後,運算處理部10A經由通信部10F對基板搬送機器人111進行基板W之裝載請求,等待沿圖4所示之搬送路徑TP將未處理之基板W搬入基板處理裝置1並載置於旋轉吸盤21之上表面。然後,於旋轉吸盤21上載置基板W(步驟S1)。另,於該時點,泵26停止,基板W可於旋轉吸盤21之上表面上水平移動。After confirming that the transfer space has been formed and that interference with the substrate W has been prevented, the processing unit 10A requests the substrate transport robot 111 to load the substrate W via the communication unit 10F. The robot then waits for an unprocessed substrate W to be loaded into the substrate processing apparatus 1 along the transfer path TP shown in FIG4 and placed on the top surface of the rotary chuck 21. The substrate W is then placed on the rotary chuck 21 (step S1). At this point, the pump 26 stops, allowing the substrate W to move horizontally on the top surface of the rotary chuck 21.
當基板W之裝載完成後,基板搬送機器人111沿搬送路徑TP自基板處理裝置1退避。繼而,運算處理部10A以使單移動部831及多抵接部82接近旋轉吸盤21上之基板W之方式,控制定心驅動部83。藉此,消除基板W相對於旋轉吸盤21之偏心,基板W之中心與旋轉吸盤21之中心一致(步驟S2)。如此,當定心處理完成後,運算處理部10A以使單移動部831及多抵接部82與基板W隔開之方式控制定心驅動部83,且使泵26作動而對旋轉吸盤21施加負壓。藉此,旋轉吸盤21自下方吸附保持基板W。After the loading of the substrate W is completed, the substrate transport robot 111 retreats from the substrate processing device 1 along the transport path TP. Then, the arithmetic processing unit 10A controls the centering drive unit 83 in such a manner that the single moving unit 831 and the multi-contact unit 82 approach the substrate W on the rotary suction cup 21. In this way, the eccentricity of the substrate W relative to the rotary suction cup 21 is eliminated, and the center of the substrate W is aligned with the center of the rotary suction cup 21 (step S2). In this way, when the centering process is completed, the arithmetic processing unit 10A controls the centering drive unit 83 in such a manner that the single moving unit 831 and the multi-contact unit 82 are separated from the substrate W, and activates the pump 26 to apply negative pressure to the rotary suction cup 21. In this way, the rotary suction cup 21 adsorbs and holds the substrate W from below.
接著,運算處理部10A對升降驅動部71、72施加下降指令。與此相應,升降驅動部71、72使下密閉杯構件61、噴嘴頭56、梁構件49、支持構件43及圓板部42一體下降。於該下降中途,由下密閉杯構件61之突起部613自下方支持之上杯33連結於下杯32。藉此,形成旋轉杯部31(=上杯33與下杯32之連結體)。Next, the processing unit 10A issues a lowering command to the lift actuators 71 and 72. In response, the lift actuators 71 and 72 lower the lower sealing cup member 61, the nozzle head 56, the beam member 49, the support member 43, and the circular plate portion 42. During this lowering process, the protrusion 613 of the lower sealing cup member 61 supports the upper cup 33 from below, connecting it to the lower cup 32. This forms the rotating cup portion 31 (the connection between the upper cup 33 and the lower cup 32).
於形成旋轉杯部31後,下密閉杯構件61、噴嘴頭56、梁構件49、支持構件43及圓板部42進一步一體下降,下密閉杯構件61之凸緣部611、612分別由上密閉杯構件62之凸緣部621及固定杯部34卡止。藉此,下密閉杯構件61定位於下限位置(圖2之位置)(步驟S3)。於上述卡止後,如圖4之局部放大圖所示,上密閉杯構件62之凸緣部621及下密閉杯構件61之凸緣部611隔著O形環63密接,且下密閉杯構件61之凸緣部612及固定杯部34隔著O形環63密接。其結果,如圖2所示,於鉛直方向上下密閉杯構件61與固定杯部34相連,藉由上密閉杯構件62、下密閉杯構件61及固定杯部34形成密閉空間12a,密閉空間12a與外側氛圍(外側空間12b)分離(氛圍分離)。After the rotating cup portion 31 is formed, the lower sealed cup member 61, nozzle head 56, beam member 49, support member 43, and circular plate portion 42 are further lowered as a unit. The flanges 611 and 612 of the lower sealed cup member 61 are respectively locked by the flange 621 of the upper sealed cup member 62 and the fixed cup portion 34. This positions the lower sealed cup member 61 at the lower limit position (the position shown in FIG. 2 ) (step S3). After this locking, as shown in the partially enlarged view of FIG. 4 , the flange 621 of the upper sealed cup member 62 and the flange 611 of the lower sealed cup member 61 are in close contact with each other via the O-ring 63, and the flange 612 of the lower sealed cup member 61 and the fixed cup portion 34 are in close contact with each other via the O-ring 63. As a result, as shown in FIG2 , the upper and lower sealed cup members 61 are connected to the fixed cup portion 34 in the vertical direction, and a closed space 12a is formed by the upper sealed cup member 62, the lower sealed cup member 61, and the fixed cup portion 34. The closed space 12a is separated from the external atmosphere (external space 12b) (atmosphere separation).
於該氛圍分離狀態下,圓板部42之下表面自上方覆蓋基板W之上表面Wf中除周緣部Ws以外之表面區域。又,上表面噴嘴51F於圓板部42之切口部44內以將噴出口511朝向基板W之上表面Wf之周緣部之姿勢定位。如此,當對基板W供給處理液之供給準備完成後,運算處理部10A對馬達23施加旋轉指令,開始保持基板W之旋轉吸盤21及旋轉杯部31之旋轉(步驟S4)。基板W及旋轉杯部31之旋轉速度例如設定為1800轉/分鐘。又,運算處理部10A驅動控制加熱器驅動部422,使加熱器421升溫至期望溫度,例如185℃。In this atmosphere separation state, the lower surface of the circular plate portion 42 covers the upper surface Wf of the substrate W, excluding the peripheral portion Ws. Furthermore, the upper surface nozzle 51F is positioned within the cutout 44 of the circular plate portion 42, with the nozzle opening 511 facing the peripheral portion of the upper surface Wf of the substrate W. Once preparations for supplying the processing liquid to the substrate W are complete, the computational processing unit 10A issues a rotation command to the motor 23, initiating rotation of the rotary chuck 21 and rotary cup 31 holding the substrate W (step S4). The rotation speed of the substrate W and rotary cup 31 is set, for example, to 1800 rpm. Furthermore, the arithmetic processing unit 10A drives and controls the heater driver 422 to raise the temperature of the heater 421 to a desired temperature, for example, 185°C.
接著,運算處理部10A對加熱氣體供給部47施加加熱氣體供給指令。藉此,將由加熱器471加熱之氮氣,即加熱氣體自加熱氣體供給部47壓送至中央噴嘴45(步驟S5)。該加熱氣體於通過配管46之期間,由帶狀加熱器48加熱。藉此,一面防止加熱氣體於經由配管46之氣體供給中之溫度降低,一面自中央噴嘴45向由基板W與圓板部42夾持之空間SPa(圖8)噴出。藉此,將基板W之上表面Wf全面加熱。又,基板W之加熱亦藉由加熱器421進行。因此,根據時間之經過,基板W之周緣部Ws之溫度上升,達到適於斜面處理之溫度,例如90℃。又,周緣部Ws以外之溫度亦上升至大致相等之溫度。即,本實施形態中,基板W之上表面Wf之面內溫度大致均勻。因此,可有效抑制基板W翹曲。Next, the computational processing unit 10A issues a heating gas supply command to the heating gas supply unit 47. This causes nitrogen gas, heated by heater 471, to be pressure-fed from the heating gas supply unit 47 to the central nozzle 45 (step S5). While passing through the piping 46, the heating gas is heated by the belt heater 48. This prevents the temperature of the heating gas from decreasing while being supplied through the piping 46, while simultaneously being ejected from the central nozzle 45 into the space SPa ( FIG. 8 ) sandwiched between the substrate W and the circular plate portion 42. This fully heats the upper surface Wf of the substrate W. Substrate W is also heated by the heater 421. As a result, over time, the temperature of the peripheral portion Ws of the substrate W rises, reaching a temperature suitable for bevel processing, for example, 90°C. Furthermore, the temperature outside the peripheral portion Ws also rises to a roughly equal temperature. In other words, in this embodiment, the in-plane temperature of the upper surface Wf of the substrate W is substantially uniform. Consequently, warping of the substrate W can be effectively suppressed.
繼而,運算處理部10A控制處理液供給部52,對上表面處理噴嘴51F及下表面處理噴嘴51B供給處理液。即,以自上表面處理噴嘴51F碰觸於基板W之上表面周緣部之方式噴出處理液之液流,且以自下表面處理噴嘴51B碰觸於基板W之下表面周緣部之方式噴出處理液之液流。藉此,執行對基板W之周緣部Ws之斜面處理(步驟S6)。然後,運算處理部10A於檢測到經過基板W之斜面處理所需之處理時間等時,對處理液供給部52施加供給停止指令,停止處理液之噴出。Next, the computation processing unit 10A controls the processing liquid supply unit 52 to supply processing liquid to the upper surface processing nozzle 51F and the lower surface processing nozzle 51B. Specifically, the processing liquid is ejected from the upper surface processing nozzle 51F so as to contact the upper surface periphery of the substrate W, while the processing liquid is ejected from the lower surface processing nozzle 51B so as to contact the lower surface periphery of the substrate W. This performs bevel processing on the peripheral portion Ws of the substrate W (step S6). Then, upon detecting that the processing time required for bevel processing of the substrate W has elapsed, the computation processing unit 10A issues a supply stop command to the processing liquid supply unit 52, thereby stopping the ejection of processing liquid.
繼而,運算處理部10A對加熱氣體供給部47施加供給停止指令,停止自加熱氣體供給部47向中央噴嘴45供給氮氣(步驟S7)。又,運算處理部10A對馬達23施加旋轉停止指令,使旋轉吸盤21及旋轉杯部31停止旋轉(步驟S8)。Next, the processing unit 10A issues a supply stop command to the heating gas supply unit 47, thereby stopping the supply of nitrogen gas from the heating gas supply unit 47 to the central nozzle 45 (step S7). Furthermore, the processing unit 10A issues a rotation stop command to the motor 23, thereby stopping the rotation of the rotary chuck 21 and the rotary cup unit 31 (step S8).
於接下來之步驟S9中,運算處理部10A觀察基板W之周緣部Ws,檢查斜面處理之結果。更具體而言,運算處理部10A與裝載基板W時同樣,將上杯33定位於退避位置,而形成搬送空間。然後,運算處理部10A控制觀察頭驅動部94,使觀察頭93接近基板W。然後,運算處理部10A藉由使光源部91點亮,而經由觀察頭93對基板W之周緣部Ws進行照明。又,攝像部92接收由周緣部Ws及相鄰區域反射之反射光,而拍攝周緣部Ws及相鄰區域。即,自於基板W繞旋轉軸AX旋轉之期間由攝像部92取得之複數個周緣部Ws之像,取得沿著基板W之旋轉方向之周緣部Ws之周緣部圖像。於是,運算處理部10A控制觀察頭驅動部94,使觀察頭93自基板W退避。與此並行,運算處理部10A基於拍攝到之周緣部Ws及相鄰區域之圖像,即周緣部圖像,由運算處理部10A檢查是否已良好地進行斜面處理。另,本實施形態中,作為該檢查之一例,自周緣部圖像檢查自基板W之端面朝向基板W之中央部由處理液處理後之處理寬度(處理後檢查)。In the next step S9, the processing unit 10A observes the peripheral portion Ws of the substrate W and checks the results of the bevel processing. More specifically, the processing unit 10A positions the upper cup 33 at the retracted position, as in the case of loading the substrate W, to form a transfer space. The processing unit 10A then controls the observation head drive unit 94 to bring the observation head 93 close to the substrate W. The processing unit 10A then illuminates the peripheral portion Ws of the substrate W through the observation head 93 by illuminating the light source unit 91. In addition, the imaging unit 92 receives the reflected light from the peripheral portion Ws and the adjacent area and captures the peripheral portion Ws and the adjacent area. That is, from the images of the plurality of peripheral portions Ws acquired by the imaging unit 92 while the substrate W rotates around the rotation axis AX, a peripheral image of the peripheral portion Ws along the rotation direction of the substrate W is acquired. Then, the computational processing unit 10A controls the observation head drive unit 94 to retract the observation head 93 from the substrate W. In parallel with this, the computational processing unit 10A inspects whether the bevel processing has been performed well based on the captured images of the peripheral portion Ws and the adjacent area, i.e., the peripheral images. In addition, in this embodiment, as an example of such inspection, the processing width after treatment with the processing liquid from the end surface of the substrate W toward the center of the substrate W is inspected from the peripheral images (post-processing inspection).
於檢查後,運算處理部10A經由通信部10F對基板搬送機器人111進行基板W之卸載請求,將已處理之基板W自基板處理裝置1搬出(步驟S10)。繼而,運算處理部10A判定是否到達應對旋轉杯部31執行杯清洗處理之時序(步驟S11)。此處,作為上述時序,例如相當於距離更換旋轉杯部31或上次保養之斜面處理之累積次數或累積時間已達到規定值等。亦包含有來自操作者之杯清洗請求之時序。After inspection, the processing unit 10A requests the substrate transport robot 111 to unload the substrate W via the communication unit 10F, unloading the processed substrate W from the substrate processing apparatus 1 (step S10). The processing unit 10A then determines whether the timing for performing cup cleaning on the rotary cup unit 31 has arrived (step S11). This timing may, for example, be when the cumulative number or time of bevel surface processing since replacing the rotary cup unit 31 or the last maintenance has reached a specified value. This also includes the timing of cup cleaning requests from the operator.
於運算處理部10A判定為無需杯清洗處理(於步驟S11中為「否(NO)」)時,不進行杯清洗處理,而結束一連串之處理。另一方面,於運算處理部10A判定為需要杯清洗處理(於步驟S11中為「是(YES)」)時,執行杯清洗處理(步驟S12)。If the calculation processing unit 10A determines that the cup cleaning process is not necessary ("No" in step S11), the cup cleaning process is not performed and the series of processes is terminated. On the other hand, if the calculation processing unit 10A determines that the cup cleaning process is necessary ("YES" in step S11), the cup cleaning process is performed (step S12).
於杯清洗處理(步驟S12)中,運算處理部10A如下般控制裝置各部(步驟S12a~S12e)。即,運算處理部10A對升降驅動部71、72施加下降指令。與此相應,升降驅動部71、72使下密閉杯構件61、噴嘴頭56、梁構件49、支持構件43及圓板部42一體下降。於該下降中途,由下密閉杯構件61之突起部613自下方支持之上杯33連結於下杯32。藉此,於保持旋轉吸盤21中不存在基板W之狀態下,形成旋轉杯部31(=上杯33與下杯32之連結體)。During the cup cleaning process (step S12), the computational processing unit 10A controls the various components of the apparatus as follows (steps S12a to S12e). Specifically, the computational processing unit 10A issues a descending command to the elevating drive units 71 and 72. In response, the elevating drive units 71 and 72 lower the lower sealed cup member 61, the nozzle head 56, the beam member 49, the support member 43, and the circular plate portion 42. During this descent, the upper cup 33 is supported from below by the protrusion 613 of the lower sealed cup member 61, connecting it to the lower cup 32. This forms the rotary cup portion 31 (the connection between the upper cup 33 and the lower cup 32) while maintaining the absence of the substrate W on the rotary chuck 21.
於形成旋轉杯部31後,下密閉杯構件61、噴嘴頭56、梁構件49、支持構件43及圓板部42進一步一體下降,下密閉杯構件61之凸緣部611、612分別由上密閉杯構件62之凸緣部621及固定杯部34卡止。藉此,下密閉杯構件61定位於下限位置(圖2之位置)(步驟S12a)。After the rotating cup portion 31 is formed, the lower sealed cup member 61, nozzle head 56, beam member 49, support member 43, and circular plate portion 42 are further lowered as a whole. The flanges 611 and 612 of the lower sealed cup member 61 are respectively locked by the flange 621 of the upper sealed cup member 62 and the fixed cup portion 34. As a result, the lower sealed cup member 61 is positioned at the lower limit position (the position shown in FIG. 2 ) (step S12a).
於該氛圍分離狀態下,如圖11B所示,圓板部42之下表面自上方覆蓋基板W之上表面Wf中除周緣部Ws以外之表面區域。又,運算處理部10A對噴嘴驅動馬達543施加驅動指令。滑塊544、頭支持構件547及噴嘴頭56一體移動與該驅動指令中包含之旋轉量對應之距離。其結果,清洗液噴出噴嘴201於圓板部42之切口部44內以將噴出口202朝向上杯33之傾斜部位333之姿勢,定位於適於杯清洗處理之杯清洗位置(圖11B所圖示之位置)(步驟S12b)。In this atmosphere separation state, as shown in FIG11B , the lower surface of the circular plate portion 42 covers the surface area of the upper surface Wf of the substrate W except for the peripheral portion Ws from above. In addition, the arithmetic processing unit 10A applies a drive command to the nozzle drive motor 543. The slider 544, the head support member 547, and the nozzle head 56 move as a whole by a distance corresponding to the rotation amount included in the drive command. As a result, the cleaning liquid ejection nozzle 201 is positioned in the notch portion 44 of the circular plate portion 42 at a cup cleaning position (the position shown in FIG11B ) suitable for cup cleaning processing with the ejection port 202 facing the inclined portion 333 of the upper cup 33 (step S12b).
如此,當對旋轉杯部31供給杯清洗液之準備完成後,運算處理部10A對馬達23施加旋轉指令,開始保持基板W之旋轉吸盤21及旋轉杯部31之旋轉(步驟S12c)。另,於杯清洗處理中,基板W及旋轉杯部31之旋轉速度設定為較斜面處理時之旋轉速度低,例如100~500轉/分鐘。After the cup cleaning liquid is supplied to the rotary cup 31, the processing unit 10A issues a rotation command to the motor 23, thereby starting the rotation of the rotary chuck 21 and the rotary cup 31, which hold the substrate W (step S12c). During the cup cleaning process, the rotation speed of the substrate W and the rotary cup 31 is set to a lower speed than that used during the bevel processing, for example, 100 to 500 rpm.
接著,運算處理部10A控制杯清洗液供給部203對清洗液噴出噴嘴201供給杯清洗液。即,自清洗液噴出噴嘴201,對上杯33之傾斜部位333之一部分,更詳細而言如圖11B所示,於鉛直方向Z上對杯清洗位置Zcr噴出杯清洗液。藉此,杯清洗液沿傾斜部位333之傾斜面334流下而執行杯清洗處理(步驟S12d)。然後,運算處理部10A於檢測到經過旋轉杯部31之杯清洗處理所需之處理時間等時,對杯清洗液供給部203施加供給停止指令,停止杯清洗液之噴出。Next, the processing unit 10A controls the cup cleaning liquid supply unit 203 to supply the cup cleaning liquid to the cleaning liquid discharge nozzle 201. Specifically, the cleaning liquid is discharged from the cleaning liquid discharge nozzle 201 toward a portion of the inclined portion 333 of the upper cup 33. More specifically, as shown in FIG11B , the cup cleaning liquid is discharged at the cup cleaning position Zcr in the vertical direction Z. This causes the cup cleaning liquid to flow down the inclined surface 334 of the inclined portion 333, performing the cup cleaning process (step S12d). Then, upon detecting that the cup cleaning process time required for the rotating cup unit 31 has elapsed, the processing unit 10A issues a supply stop command to the cup cleaning liquid supply unit 203, thereby stopping the discharge of the cup cleaning liquid.
繼而,運算處理部10A對馬達23施加旋轉停止指令,使旋轉杯部31停止旋轉(步驟S12e)。然後,結束杯清洗處理,且結束一連串之處理。另,重複執行該等一連串之步驟(步驟S1~S12)。Next, the processing unit 10A issues a rotation stop command to the motor 23, causing the rotating cup unit 31 to stop rotating (step S12e). The cup cleaning process is then completed, and the entire series of processes is terminated. The series of steps (steps S1 to S12) is then repeated.
如上所述,於本實施形態中,自旋轉軸AX側對繞旋轉軸AX旋轉之旋轉杯部31直接供給杯清洗液,藉此執行杯清洗處理。因此,可將旋轉杯部31保持清潔,且有效地防止因附著於旋轉杯部31之處理液之液滴而產生微粒。又,若對因處理液,尤其是藥液引起之杯污染置之不理,則有由樹脂材料等製作之旋轉杯部31變形之情況,但藉由於適當之時序執行杯清洗處理,而抑制旋轉杯部31之變形。即,可謀求旋轉杯部31之長壽命化。其結果,可抑制運行成本。且,用於發揮此種作用效果之杯清洗液之使用量較專利文獻1所記載之基板處理裝置少,可謀求減少環境負荷。As described above, in this embodiment, cup cleaning liquid is directly supplied from the side of the rotation axis AX to the rotating cup portion 31 rotating about the rotation axis AX, thereby performing the cup cleaning process. This maintains the cleanliness of the rotating cup portion 31 and effectively prevents the generation of particles from droplets of the processing liquid adhering to the rotating cup portion 31. Furthermore, if cup contamination by the processing liquid, particularly a chemical solution, is left untreated, the rotating cup portion 31 made of a resin material, such as a resin, may deform. However, by performing the cup cleaning process at an appropriate timing, deformation of the rotating cup portion 31 is suppressed. This extends the life of the rotating cup portion 31, thereby reducing operating costs. Furthermore, the amount of cup cleaning liquid used to achieve this effect is less than that of the substrate processing apparatus described in Patent Document 1, thereby reducing the environmental load.
又,於旋轉杯部31中,以上杯33之傾斜部位333之傾斜面334捕集處理液。此時,伴隨杯旋轉而產生之離心力作用於附著於旋轉杯部31之傾斜部位333之傾斜面334之液滴。又,受到由在斜面處理過程中供給且沿基板W之上表面Wf及下表面Wb朝徑向外側流動之氮氣等形成之氣流之影響。藉此,沿著傾斜部位333之傾斜面334之向下矢量應力作用於液滴。且,對傾斜部位333供給杯清洗液,使之沿傾斜部位333朝下方流動。因此,可有效地自旋轉杯部31去除處理液。Furthermore, in the rotating cup portion 31, the processing liquid is captured by the inclined surface 334 of the inclined portion 333 of the upper cup 33. At this time, the centrifugal force generated by the cup rotation acts on the liquid droplets adhering to the inclined surface 334 of the inclined portion 333 of the rotating cup portion 31. Furthermore, the liquid droplets are affected by the flow of nitrogen gas, etc., supplied during the inclined surface treatment process and flowing radially outward along the upper surface Wf and lower surface Wb of the substrate W. As a result, downward vector stress acts on the liquid droplets along the inclined surface 334 of the inclined portion 333. Furthermore, a cup cleaning liquid is supplied to the inclined portion 333 and caused to flow downward along the inclined portion 333. Therefore, the processing liquid can be effectively removed from the rotating cup portion 31.
又,於鉛直方向Z上,傾斜部位333中之杯清洗液之著液位置,即杯清洗位置Zcr設定得較捕集自旋轉之基板W飛散之處理液之液滴之高度位置Zw高。因此,可以沿傾斜部位333之傾斜面334流下之杯清洗液,對由傾斜部位333捕集到之所有處理液之液滴進行清洗去除,可獲得優異之杯清洗效果。Furthermore, in the vertical direction Z, the cup cleaning position Zcr, where the cup cleaning liquid lands in the inclined portion 333, is set higher than the height Zw at which droplets of the processing liquid are captured from the spinning substrate W. Therefore, the cup cleaning liquid flowing down the inclined surface 334 of the inclined portion 333 can clean and remove all droplets of the processing liquid captured by the inclined portion 333, achieving excellent cup cleaning results.
又,於本實施形態中,如圖11B所示,於上表面保護加熱機構4之圓板部42接近上杯33之傾斜部位333之狀態下,執行杯清洗處理。因此,有時著液於傾斜部位333之杯清洗液之一部分回彈。考慮到該點,於本實施形態中,杯清洗位置Zcr設定得較上表面保護加熱機構4之圓板部42之上表面之位置,即高度位置Z42低。因此,可有效地防止於杯清洗位置Zcr回彈之杯清洗液之液滴附著於圓板部42之上表面。Furthermore, in this embodiment, as shown in Figure 11B , the cup cleaning process is performed while the circular plate portion 42 of the upper surface protection and heating mechanism 4 is close to the inclined portion 333 of the upper cup 33. Therefore, some of the cup cleaning liquid that lands on the inclined portion 333 may rebound. Taking this into account, in this embodiment, the cup cleaning position Zcr is set lower than the position of the upper surface of the circular plate portion 42 of the upper surface protection and heating mechanism 4, i.e., the height position Z42. This effectively prevents droplets of cup cleaning liquid that rebound from the cup cleaning position Zcr from adhering to the upper surface of the circular plate portion 42.
又,藉由來自上表面保護加熱機構4之散熱,不僅將基板W加熱,亦將上杯33加熱,但將常溫之杯清洗液供給至上杯33,藉此上杯33之溫度降低。其結果,可提高上杯33之耐熱性,且抑制上杯33之變形。Furthermore, heat dissipated from the upper surface protection and heating mechanism 4 heats not only the substrate W but also the upper cup 33. However, the temperature of the upper cup 33 is lowered by supplying a room-temperature cup cleaning liquid to the upper cup 33. As a result, the heat resistance of the upper cup 33 is improved and deformation of the upper cup 33 is suppressed.
又,於本實施形態中,由於噴出口202之口徑大於上表面處理噴嘴51F之噴出口511之口徑,故可獲得以下作用效果。為抑制杯清洗液於杯清洗位置Zcr回彈,於本實施形態中,將杯清洗液之噴出速度設定得較處理液之噴出速度小。另一方面,如上述般將噴出口202之口徑設定得相對較大。因此,儘管抑制了杯清洗液之噴出速度,但可獲得每單位時間供給至杯清洗位置Zcr之杯清洗液之供給量。即,可抑制杯清洗液於杯清洗位置Zcr回彈,且對杯清洗處理供給充分之杯清洗液。其結果,可抑制因杯清洗液之回彈引起之不良影響且良好地進行杯清洗處理。Furthermore, in this embodiment, since the diameter of the nozzle 202 is larger than the diameter of the nozzle 511 of the upper surface treatment nozzle 51F, the following effects can be obtained. In order to suppress the cup cleaning liquid from rebounding at the cup cleaning position Zcr, in this embodiment, the ejection speed of the cup cleaning liquid is set to be lower than the ejection speed of the treatment liquid. On the other hand, as described above, the diameter of the nozzle 202 is set to be relatively large. Therefore, although the ejection speed of the cup cleaning liquid is suppressed, the supply amount of the cup cleaning liquid to the cup cleaning position Zcr per unit time can be obtained. That is, the cup cleaning liquid can be suppressed from rebounding at the cup cleaning position Zcr, and a sufficient amount of cup cleaning liquid can be supplied to the cup cleaning process. As a result, the adverse effects caused by the rebound of the cup cleaning liquid can be suppressed and the cup cleaning process can be performed well.
又,如圖11B所示,由於杯清洗液之噴出方向D33相對於徑向AR朝上杯33之旋轉方向Dr傾斜,故可如上述般有效地防止於杯清洗位置Zcr回彈之杯清洗液之液滴返回並附著於清洗液噴出噴嘴201。其結果,可繼續進行使用清洗液噴出噴嘴201之杯清洗處理,且可抑制清洗液噴出噴嘴201或旋轉杯部31之保養頻率,提高裝置之運轉效率。Furthermore, as shown in FIG11B , because the cup cleaning liquid ejection direction D33 is inclined relative to the radial direction AR toward the rotational direction Dr of the upper cup 33, as described above, droplets of cup cleaning liquid that rebound at the cup cleaning position Zcr are effectively prevented from returning to and adhering to the cleaning liquid ejection nozzle 201. As a result, the cup cleaning process using the cleaning liquid ejection nozzle 201 can be continued, and the frequency of maintenance of the cleaning liquid ejection nozzle 201 or the rotating cup portion 31 can be reduced, thereby improving the operating efficiency of the apparatus.
又,於本實施形態中,藉由噴嘴座53將清洗液噴出噴嘴201與上表面處理噴嘴51F一併保持,構成噴嘴頭56。且,噴嘴頭56藉由噴嘴移動部54移動至杯清洗位置(參考圖11B)。藉此,將清洗液噴出噴嘴201高精度地定位於適於杯清洗處理之位置。因此,可對上杯33之期望位置供給杯清洗液,可良好地進行杯清洗處理。Furthermore, in this embodiment, the cleaning liquid discharge nozzle 201 and the upper surface treatment nozzle 51F are held together by the nozzle holder 53 to form a nozzle head 56. The nozzle head 56 is then moved to the cup cleaning position (see FIG. 11B ) by the nozzle moving unit 54. This allows the cleaning liquid discharge nozzle 201 to be precisely positioned at a position suitable for cup cleaning. Consequently, the cup cleaning liquid can be supplied to the desired position of the upper cup 33, enabling efficient cup cleaning.
如上所述,於本實施形態中,控制單元10相當於本發明之「控制部」之一例。杯清洗位置Zcr相當於本發明之「杯清洗液之噴出目的地」之一例。高度位置Zw相當於本發明之「基板之上表面之高度位置」之一例。清洗液噴出噴嘴201相當於本發明之「上表面清洗噴嘴」之一例。傾斜面334相當於本發明之「旋轉杯部之內周面」之一例。As described above, in this embodiment, the control unit 10 corresponds to an example of the "control section" of the present invention. The cup cleaning position Zcr corresponds to an example of the "cup cleaning liquid ejection destination" of the present invention. The height position Zw corresponds to an example of the "height position of the upper surface of the substrate" of the present invention. The cleaning liquid ejection nozzle 201 corresponds to an example of the "upper surface cleaning nozzle" of the present invention. The inclined surface 334 corresponds to an example of the "inner circumferential surface of the rotating cup portion" of the present invention.
然而,於上述第1實施形態中,於鉛直方向Z上自較藉由旋轉吸盤21保持基板W之基板保持高度上方朝傾斜面334之杯清洗位置Zcr噴出杯清洗液,但與此同時,亦可以自較基板保持高度下方朝傾斜面334噴出杯清洗液之方式向杯清洗位置Zcr噴出杯清洗液(第2實施形態)。However, in the above-mentioned first embodiment, the cup cleaning liquid is sprayed from the cup cleaning position Zcr of the inclined surface 334 above the substrate holding height at which the substrate W is held by the rotating suction cup 21 in the vertical direction Z, but at the same time, the cup cleaning liquid can also be sprayed toward the cup cleaning position Zcr by spraying the cup cleaning liquid from below the substrate holding height toward the inclined surface 334 (second embodiment).
圖14係顯示本發明之基板處理裝置之第2實施形態之構成及動作之模式圖。該第2實施形態與第1實施形態大幅不同之點在於,於支持下表面處理噴嘴51B之噴嘴支持部57之上表面(凸緣部位572)設置有清洗液噴出噴嘴204。該清洗液噴出噴嘴204於使噴出杯清洗液之噴出口205朝向杯清洗位置Zcr之狀態下固定於噴嘴支持部57。另,由於其他構成及動作與第1實施形態同樣,故標註相同符號且省略說明。Figure 14 schematically illustrates the structure and operation of a second embodiment of the substrate processing apparatus of the present invention. This second embodiment differs significantly from the first embodiment in that a cleaning liquid discharge nozzle 204 is provided on the upper surface (ridge portion 572) of the nozzle support 57 that supports the lower surface processing nozzle 51B. This cleaning liquid discharge nozzle 204 is fixed to the nozzle support 57 with its nozzle port 205, which discharges cup cleaning liquid, oriented toward the cup cleaning position Zcr. Since the remaining structure and operation are identical to those of the first embodiment, they are designated with the same reference numerals and their explanations are omitted.
於第2實施形態中,於杯清洗處理時(步驟S12d),於運算處理部10A控制杯清洗液供給部203亦對清洗液噴出噴嘴204供給杯清洗液時,對杯清洗位置Zcr同時供給來自清洗液噴出噴嘴201、204之杯清洗液。因此,自斜上方及斜下方之兩者對上杯33之傾斜部位333供給杯清洗液。其結果,可獲得較第1實施形態優異之杯清洗性能。In the second embodiment, during the cup cleaning process (step S12d), when the computing unit 10A controls the cup cleaning liquid supply unit 203 to also supply cup cleaning liquid to the cleaning liquid discharge nozzle 204, the cup cleaning liquid from the cleaning liquid discharge nozzles 201 and 204 is simultaneously supplied to the cup cleaning position Zcr. Therefore, the cup cleaning liquid is supplied to the inclined portion 333 of the upper cup 33 from both the upper and lower sides. As a result, superior cup cleaning performance compared to the first embodiment is achieved.
如此,於第2實施形態中,清洗液噴出噴嘴204相當於本發明之「下表面清洗噴嘴」之一例。Thus, in the second embodiment, the cleaning liquid spraying nozzle 204 is equivalent to an example of the "lower surface cleaning nozzle" of the present invention.
又,作為本發明之清洗液噴出噴嘴,於第1實施形態中具有上表面清洗噴嘴201,於第2實施形態中具有上表面清洗噴嘴201及下表面清洗噴嘴204,但亦可構成為僅設置下表面清洗噴嘴204(第3實施形態)。於該第3實施形態中,由於不使用上表面清洗噴嘴,故於杯清洗處理時,可使噴嘴頭56(=上表面處理噴嘴51F+噴嘴座53)與傾斜部位333隔開。因此,可抑制由傾斜部位333反射之杯清洗液附著於上表面處理噴嘴51F。又,只要以噴出口205朝向杯清洗位置Zcr之姿勢將清洗液噴出噴嘴204固定於噴嘴支持部57即可,容易進行清洗液噴出噴嘴204之調整。且,由於使用固定配置之清洗液噴出噴嘴204,故無需第1實施形態或第2實施形態中之清洗液噴出噴嘴201對杯清洗位置之定位步驟(步驟S12b)。其結果,可謀求縮短處理時間。Furthermore, the cleaning liquid discharge nozzle of the present invention includes an upper surface cleaning nozzle 201 in the first embodiment, and includes both an upper surface cleaning nozzle 201 and a lower surface cleaning nozzle 204 in the second embodiment. However, a configuration in which only the lower surface cleaning nozzle 204 is provided is also possible (third embodiment). In this third embodiment, since the upper surface cleaning nozzle is not used, the nozzle head 56 (=upper surface treatment nozzle 51F+nozzle holder 53) can be separated from the inclined portion 333 during cup cleaning. This prevents cup cleaning liquid reflected from the inclined portion 333 from adhering to the upper surface treatment nozzle 51F. Furthermore, simply securing the cleaning liquid discharge nozzle 204 to the nozzle support 57 with the discharge port 205 facing the cup cleaning position Zcr facilitates adjustment of the cleaning liquid discharge nozzle 204. Furthermore, since the cleaning liquid discharge nozzle 204 is fixed, the step of positioning the cleaning liquid discharge nozzle 201 relative to the cup cleaning position (step S12b) as in the first or second embodiments is unnecessary. Consequently, processing time can be shortened.
另,本發明並非限定於上述實施形態者,只要不脫離其主旨即可對上述者施加各種變更。例如,於上述實施形態中,藉由1個馬達23旋轉驅動旋轉吸盤21與旋轉杯部31,但亦可藉由不同之馬達分別驅動旋轉吸盤21與旋轉杯部31。亦可將本發明應用於此種基板處理裝置。且,於該基板處理裝置中,於杯清洗處理中,可一面僅使旋轉杯部31旋轉一面供給杯清洗液。其結果,可減少杯清洗處理時之消耗電力,且可謀求減少環境負荷。The present invention is not limited to the above-described embodiments, and various modifications may be made thereto without departing from the main purpose. For example, in the above-described embodiments, the rotary suction cup 21 and the rotary cup 31 are rotationally driven by a single motor 23. However, the rotary suction cup 21 and the rotary cup 31 may be driven separately by separate motors. The present invention may also be applied to such a substrate processing apparatus. Furthermore, in such a substrate processing apparatus, during the cup cleaning process, the cup cleaning liquid may be supplied while only the rotary cup 31 is rotated. As a result, power consumption during the cup cleaning process can be reduced, and the environmental load can be reduced.
又,於上述實施形態中,將本發明應用於具有於基座構件17之上表面設置基板處理部SP之高底板構造之基板處理裝置。又,於上述實施形態中,將本發明應用於具有旋轉杯部31之基板處理裝置。又,於上述實施形態中,將本發明應用於具有上表面保護加熱機構4、氛圍分離機構6、定心機構8及基板觀察機構9之基板處理裝置。然而,例如如專利文獻1所記載般,可將本發明應用於不具有該等構成之基板處理裝置,即,於腔室11之內部空間12對基板W之周緣部供給處理液而處理上述周緣部之基板處理裝置。Furthermore, in the above-described embodiment, the present invention is applied to a substrate processing apparatus having a high bottom plate structure in which a substrate processing portion SP is provided on the upper surface of a base member 17. Furthermore, in the above-described embodiment, the present invention is applied to a substrate processing apparatus having a rotary cup portion 31. Furthermore, in the above-described embodiment, the present invention is applied to a substrate processing apparatus having an upper surface protection and heating mechanism 4, an atmosphere separation mechanism 6, a centering mechanism 8, and a substrate observation mechanism 9. However, as described in Patent Document 1, for example, the present invention may be applied to a substrate processing apparatus that does not have these structures, that is, a substrate processing apparatus that supplies a processing liquid to the periphery of a substrate W in the internal space 12 of a chamber 11 to process the periphery.
又,將本發明應用於執行作為「基板處理」之一例之斜面處理之基板處理裝置,但亦可將本發明應用於藉由對旋轉之基板供給處理液而對基板實施基板處理之基板處理裝置全體。Furthermore, the present invention is applied to a substrate processing apparatus that performs bevel processing as an example of "substrate processing", but the present invention can also be applied to an entire substrate processing apparatus that performs substrate processing on a substrate by supplying a processing liquid to a rotating substrate.
本發明可應用於藉由處理液處理基板之基板處理全體。The present invention can be applied to the entire substrate processing system for processing a substrate using a processing liquid.
1:基板處理裝置(基板處理單元) 2:保持旋轉機構 2A:基板保持部 2B:旋轉機構 3:防飛散機構 4:上表面保護加熱機構 5:處理機構 6:氛圍分離機構 7:升降機構 8:定心機構 9:基板觀察機構 10:控制單元(控制部) 10A:運算處理部 10B:記憶部 10C:讀取部 10D:圖像處理部 10E:驅動控制部 10F:通信部 10G:排氣控制部 10H:顯示部 10J:輸入部 11:腔室 11a:底壁 11b~11e:側壁 11b1:搬送用開口 11d1:保養用開口 11f:頂壁 11f1:開口 11g:中心 12:內部空間 12a:密閉空間 12b:外側空間 13:風扇過濾器單元 14:沖孔板 15:擋板 16:基座支持構件 17:基座構件 19:蓋構件 21:旋轉吸盤 22:旋轉軸部 23:馬達 24:動力傳遞部 25,28:配管 26:泵 27:動力傳遞部 27a:圓環構件 29:氮氣供給部 31:旋轉杯部 32:下杯 33:上杯 34:固定杯部 38:排氣部 41:阻斷板 42:圓板部 43:支持構件 44:切口部 45:中央噴嘴 46:配管 47:加熱氣體供給部 48:帶狀加熱器 49:梁構件 51B:下表面處理噴嘴(處理液噴出噴嘴) 51F:上表面處理噴嘴(處理液噴出噴嘴) 52:處理液供給部 53:噴嘴座 54:噴嘴移動部 56:噴嘴頭 57:噴嘴支持部 58:配管 61:下密閉杯構件 62:上密閉杯構件 63, 64: O形環 71, 72:升降驅動部 81:單抵接部 82:多抵接部 83:定心驅動部 91:光源部 92:攝像部 93:觀察頭 94:觀察頭驅動部 100:基板處理系統 110:基板處理區域 111:基板搬送機器人 112:載置台 120:傳載部 121:容器保持部 122:傳載機器人 122a:基座部 122b:多關節臂 122c:手 171:馬達安裝部位 172:旋轉吸盤安裝部位 173:第1升降安裝部位 174:第2升降安裝部位 175:單移動安裝部位 176:多移動安裝部位 177:光學零件安裝位置 178:頭驅動位置 200:杯清洗機構 201: (上表面)清洗液噴出噴嘴 202: (上表面清洗液噴出噴嘴之)噴出口 203:杯清洗液供給部 204: (下表面)清洗液噴出噴嘴 205: (下表面清洗液噴出噴嘴之)噴出口 231:旋轉軸 241:第1滑輪 242:第2滑輪 243:環形帶 331:下圓環部位 332:上圓環部位 333: (上杯之)傾斜部位 334:傾斜面 341:受液部位 342:排氣部位 343:劃分壁 344:氣體引導部 421:加熱器 422:加熱器驅動部 471:加熱器 511:噴出口 541:基座構件 542:直動致動器 543:噴嘴驅動馬達 544:滑塊 545:運動轉換機構 546:連結構件 547:頭支持構件 548:彈簧構件 571:圓筒部位 572:凸緣部位 611, 612, 621:凸緣部 613:突起部 712, 713, 722:升降部 713a:升降件 831:單移動部 832:多移動部 AR:徑向 AX:旋轉軸 C:容器 D1:徑向 D2:抵接移動方向 D3:頭移動方向 D32:外徑 D33:噴出方向 d331, d332:直徑 D331, D332:外徑 Dr:旋轉方向 GPc:間隙 Lof:距離 RM:記錄媒體 S1~S12:步驟 S12a~S12e:步驟 SP:基板處理部 Spa:空間 SPc:捕集空間 SPe:排出空間 TP:搬送路徑 VL1:第1假想水平線 VL2:第2假想水平線 W:基板 Wb:下表面 Wf:上表面 Ws:(基板之)周緣部 Z:鉛直方向 Z42:高度位置 Zcr:杯清洗位置 Zw:(基板之上表面之)高度位置 θ:角度 +D1:方向 -D1:方向 1: Substrate processing device (substrate processing unit) 2: Holding and rotating mechanism 2A: Substrate holding unit 2B: Rotating mechanism 3: Anti-scattering mechanism 4: Top surface protection and heating mechanism 5: Processing mechanism 6: Atmosphere separation mechanism 7: Elevator mechanism 8: Centering mechanism 9: Substrate observation mechanism 10: Control unit (control unit) 10A: Arithmetic processing unit 10B: Memory unit 10C: Reading unit 10D: Image processing unit 10E: Drive control unit 10F: Communication unit 10G: Exhaust control unit 10H: Display unit 10J: Input unit 11: Chamber 11a: Bottom wall 11b-11e: Side walls 11b1: Transport opening 11d1: Maintenance opening 11f: Top wall 11f1: Opening 11g: Center 12: Internal space 12a: Enclosed space 12b: External space 13: Fan filter unit 14: Perforated plate 15: Baffle 16: Base support member 17: Base member 19: Cover member 21: Rotating suction cup 22: Rotating shaft 23: Motor 24: Power transmission unit 25, 28: Piping 26: Pump 27: Power transmission unit 27a: Ring member 29: Nitrogen supply unit 31: Rotating cup 32: Lower cup 33: Upper cup 34: Fixed cup 38: Exhaust section 41: Blocking plate 42: Circular plate 43: Support member 44: Cutout 45: Central nozzle 46: Piping 47: Heating gas supply 48: Strip heater 49: Beam 51B: Lower surface treatment nozzle (treatment liquid discharge nozzle) 51F: Upper surface treatment nozzle (treatment liquid discharge nozzle) 52: Treatment liquid supply 53: Nozzle holder 54: Nozzle moving section 56: Nozzle head 57: Nozzle support 58: Piping 61: Lower sealing cup assembly 62: Upper sealing cup assembly 63, 64: O-rings 71, 72: Lifting drive 81: Single abutment 82: Multiple abutment 83: Centering drive 91: Light source 92: Camera 93: Observation head 94: Observation head drive 100: Substrate processing system 110: Substrate processing area 111: Substrate transfer robot 112: Loading table 120: Carrier 121: Container holding unit 122: Carrier robot 122a: Base 122b: Multi-jointed arm 122c: Hand 171: Motor mounting area 172: Rotating suction cup mounting area 173: First lift mounting area 174: Second lift mounting area 175: Single-movement mounting area 176: Multi-movement mounting area 177: Optical component mounting area 178: Head drive area 200: Cup cleaning mechanism 201: (Upper surface) cleaning liquid spray nozzle 202: (Upper surface cleaning liquid spray nozzle) outlet 203: Cup cleaning liquid supply unit 204: (Lower surface) cleaning liquid spray nozzle 205: (Lower surface cleaning liquid spray nozzle) outlet 231: Rotating shaft 241: First pulley 242: Second pulley 243: Endless belt 331: Lower ring 332: Upper ring 333: Inclined portion (of upper cup) 334: Inclined surface 341: Liquid receiving portion 342: Exhaust portion 343: Partitioning wall 344: Gas guide 421: Heater 422: Heater drive unit 471: Heater 511: Nozzle 541: Base member 542: Linear actuator 543: Nozzle drive motor 544: Slider 545: Motion conversion mechanism 546: Connecting member 547: Head support member 548: Spring member 571: Cylindrical member 572: Flange 611, 612, 621: Flange 613: Protrusion 712, 713, 722: Lifting unit 713a: Lifting element 831: Single-moving unit 832: Multi-moving unit AR: Radial direction AX: Rotation axis C: Container D1: Radial direction D2: Contact movement direction D3: Head movement direction D32: Outer diameter D33: Discharge direction d331, d332: Diameter D331, D332: Outer diameter Dr: Rotational direction GPc: Gap Lof: Distance RM: Recording medium S1-S12: Steps S12a-S12e: Steps SP: Substrate processing unit Spa: Spacing SPc: Collection space SPe: Exhaust space TP: Transport path VL1: First virtual horizontal line VL2: Second virtual horizontal line W: Substrate Wb: Lower surface Wf: Upper surface Ws: Periphery (of substrate) Z: Vertical direction Z42: Height position Zcr: Cup cleaning position Zw: Height position (of substrate top surface) θ: Angle +D1: Direction -D1: Direction
圖1係顯示裝備本發明之基板處理裝置之第1實施形態之基板處理系統之概略構成之俯視圖。 圖2係顯示本發明之基板處理裝置之第1實施形態之構成之圖。 圖3係模式性顯示腔室之構成及安裝於腔室之構成之圖。 圖4係模式性顯示設置於基座構件上之基板處理部之構成之俯視圖。 圖5係顯示保持於旋轉吸盤之基板與旋轉杯部之尺寸關係之圖。 圖6係顯示旋轉杯部及固定杯部之一部分之圖。 圖7係顯示上表面保護加熱機構之構成之外觀立體圖。 圖8係圖7所示之上表面保護加熱機構之剖視圖。 圖9係顯示裝備於處理機構之上表面側之處理液噴出噴嘴、與裝備於杯清洗機構之上表面側之杯清洗液噴出噴嘴之立體圖。 圖10係模式性顯示噴嘴移動部之構成之圖。 圖11A係顯示進行斜面處理時之噴嘴位置之模式圖。 圖11B係顯示進行杯清洗處理時之噴嘴位置之模式圖。 圖12係顯示裝備於處理機構之下表面側之處理液噴出噴嘴及支持該噴嘴之噴嘴支持部之立體圖。 圖13係顯示藉由圖2所示之基板處理裝置執行作為基板處理動作之一例之斜面處理之流程圖。 圖14係顯示本發明之基板處理裝置之第2實施形態之構成及動作之模式圖。 Figure 1 is a top view schematically illustrating the configuration of a substrate processing system equipped with a first embodiment of the substrate processing apparatus of the present invention. Figure 2 is a diagram illustrating the configuration of the first embodiment of the substrate processing apparatus of the present invention. Figure 3 schematically illustrates the configuration of a chamber and the components mounted in the chamber. Figure 4 is a top view schematically illustrating the configuration of a substrate processing unit mounted on a base member. Figure 5 illustrates the dimensional relationship between a substrate held on a rotary chuck and a rotary cup. Figure 6 illustrates a portion of the rotary cup and the fixed cup. Figure 7 is a perspective view illustrating the external configuration of the upper surface protection and heating mechanism. Figure 8 is a cross-sectional view of the upper surface protection and heating mechanism shown in Figure 7. Figure 9 is a perspective view of a processing liquid discharge nozzle mounted on the upper surface side of the processing mechanism and a cup cleaning liquid discharge nozzle mounted on the upper surface side of the cup cleaning mechanism. Figure 10 is a schematic diagram showing the configuration of the nozzle moving unit. Figure 11A is a schematic diagram showing the nozzle positions during bevel processing. Figure 11B is a schematic diagram showing the nozzle positions during cup cleaning. Figure 12 is a perspective view of a processing liquid discharge nozzle mounted on the lower surface side of the processing mechanism and the nozzle support unit that supports the nozzle. Figure 13 is a flow chart showing bevel processing, an example of a substrate processing operation, performed by the substrate processing apparatus shown in Figure 2. FIG14 is a schematic diagram showing the structure and operation of the second embodiment of the substrate processing apparatus of the present invention.
1:基板處理裝置(基板處理單元) 2:保持旋轉機構 2A:基板保持部 3:防飛散機構 4:上表面保護加熱機構 5:處理機構 6:氛圍分離機構 7:升降機構 8:定心機構 9:基板觀察機構 11b, 11d, 11e:側壁 11b1:搬送用開口 11d1:保養用開口 11g:中心 12:內部空間 12a:密閉空間 12b:外側空間 15:擋板 17:基座構件 19:蓋構件 23:馬達 32:下杯 33:上杯 42:圓板部 47:加熱氣體供給部 49:梁構件 51F:上表面處理噴嘴(處理液噴出噴嘴) 53:噴嘴座 54:噴嘴移動部 56:噴嘴頭 61:下密閉杯構件 62:上密閉杯構件 63, 64: O形環 81:單抵接部 82:多抵接部 83:定心驅動部 91:光源部 92:攝像部 93:觀察頭 94:觀察頭驅動部 201:(上表面)清洗液噴出噴嘴 341:受液部位 421:加熱器 471:加熱器 611, 612, 621:凸緣部 613:突起部 712, 713, 722:升降部 831:單移動部 832:多移動部 AX:旋轉軸 D1:徑向 D2:抵接移動方向 D3:頭移動方向 GPc:間隙 Lof:距離 SP:基板處理部 SPc:捕集空間 SPe:排出空間 TP:搬送路徑 VL1:第1假想水平線 VL2:第2假想水平線 W:基板 Wb:下表面 Ws:(基板之)周緣部 Z:鉛直方向 1: Substrate processing device (substrate processing unit) 2: Holding and rotating mechanism 2A: Substrate holding unit 3: Anti-scattering mechanism 4: Top surface protection and heating mechanism 5: Processing mechanism 6: Atmosphere separation mechanism 7: Elevator mechanism 8: Centering mechanism 9: Substrate observation mechanism 11b, 11d, 11e: Side walls 11b1: Transport opening 11d1: Maintenance opening 11g: Center 12: Internal space 12a: Enclosed space 12b: External space 15: Baffle 17: Base member 19: Cover member 23: Motor 32: Lower cup 33: Upper cup 42: Circular plate 47: Heating gas supply unit 49: Beam member 51F: Top surface treatment nozzle (treatment liquid spray nozzle) 53: Nozzle holder 54: Nozzle moving unit 56: Nozzle head 61: Lower sealing cup member 62: Upper sealing cup member 63, 64: O-rings 81: Single contact unit 82: Multiple contact units 83: Centering drive unit 91: Light source unit 92: Camera unit 93: Observation head 94: Observation head drive unit 201: (Top surface) cleaning liquid spray nozzle 341: Liquid receiving area 421: Heater 471: Heater 611, 612, 621: Flange 613: Protrusion 712, 713, 722: Lifting section 831: Single-moving section 832: Multi-moving section AX: Rotation axis D1: Radial direction D2: Contact movement direction D3: Head movement direction GPc: Gap Lof: Distance SP: Substrate processing section SPc: Collection space SPe: Exhaust space TP: Transport path VL1: First virtual horizontal line VL2: Second virtual horizontal line W: Substrate Wb: Bottom surface Ws: Peripheral portion (of substrate) Z: Vertical direction
Claims (8)
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|---|---|---|---|
| JP2022-135572 | 2022-08-29 | ||
| JP2022135572A JP2024032110A (en) | 2022-08-29 | 2022-08-29 | Substrate processing equipment and substrate processing method |
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| Publication Number | Publication Date |
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| TW202414524A TW202414524A (en) | 2024-04-01 |
| TWI900876B true TWI900876B (en) | 2025-10-11 |
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| JP (1) | JP2024032110A (en) |
| KR (1) | KR20250033259A (en) |
| CN (1) | CN119790491A (en) |
| TW (1) | TWI900876B (en) |
| WO (1) | WO2024048122A1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08255789A (en) * | 1995-03-15 | 1996-10-01 | Tokyo Electron Ltd | Processing device and processing method |
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| JP6503279B2 (en) | 2015-11-10 | 2019-04-17 | 株式会社Screenホールディングス | Film processing unit, substrate processing apparatus and substrate processing method |
| JP6941920B2 (en) * | 2016-03-08 | 2021-09-29 | 株式会社荏原製作所 | Substrate cleaning equipment, substrate cleaning method, substrate processing equipment and substrate drying equipment |
| JP6961362B2 (en) * | 2017-03-03 | 2021-11-05 | 東京エレクトロン株式会社 | Board processing equipment |
| JP7412134B2 (en) * | 2019-11-01 | 2024-01-12 | 東京エレクトロン株式会社 | Substrate processing equipment and substrate processing method |
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- 2022-08-29 JP JP2022135572A patent/JP2024032110A/en active Pending
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- 2023-07-24 CN CN202380063030.4A patent/CN119790491A/en active Pending
- 2023-07-24 KR KR1020257003384A patent/KR20250033259A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08255789A (en) * | 1995-03-15 | 1996-10-01 | Tokyo Electron Ltd | Processing device and processing method |
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| KR20250033259A (en) | 2025-03-07 |
| JP2024032110A (en) | 2024-03-12 |
| WO2024048122A1 (en) | 2024-03-07 |
| TW202414524A (en) | 2024-04-01 |
| CN119790491A (en) | 2025-04-08 |
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