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TWI900850B - Fluidic assembly carrier substrate system for microled mass transfer and microled mass transfer method - Google Patents

Fluidic assembly carrier substrate system for microled mass transfer and microled mass transfer method

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Publication number
TWI900850B
TWI900850B TW112117417A TW112117417A TWI900850B TW I900850 B TWI900850 B TW I900850B TW 112117417 A TW112117417 A TW 112117417A TW 112117417 A TW112117417 A TW 112117417A TW I900850 B TWI900850 B TW I900850B
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micro
carrier substrate
substrate
leds
led
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TW112117417A
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TW202335140A (en
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保羅 約翰 舒勒
健司 佐佐木
葛特 鄂孟
宗霑 李
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美商伊樂視有限公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • H10P72/10
    • H10P72/3204
    • H10P72/3408
    • H10P72/74
    • H10W72/0198
    • H10W90/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Laminated Bodies (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

A microLED mass transfer stamping system includes a stamp substrate with an array of trap sites, each configured with a columnar-shaped recess to temporarily secure a keel extended from a bottom surface of a microLED. In the case of surface mount microLEDs, the keel is electrically nonconductive. In the case of vertical microLEDs, the keel is an electrically conductive second electrode. The stamping system also includes a fluidic assembly carrier substrate with an array of wells having a pitch separating adjacent wells that matches the pitch separating the stamp substrate trap sites. A display substrate includes an array of microLED pads with the same pitch as the trap sites. The stamp substrate top surface is pressed against the display substrate, with each trap site interfacing a corresponding microLED site, and the microLEDs are transferred. Fluidic assembly stamp substrates are also presented for use with microLEDs having keels or axial leads.

Description

用於微型發光二極體巨量轉移的流體組裝載體襯底系統及微型發光二極體巨量轉移方法Fluid assembly carrier substrate system for mass transfer of micro-light-emitting diodes and method for mass transfer of micro-light-emitting diodes

本申請涉及微型發光二極體(micro-light emitting diode,micro-LED)顯示器領域,尤其涉及顯示器製造過程中微型發光二極體的巨量轉移系統及方法。 This application relates to the field of micro-light emitting diode (micro-LED) displays, and more particularly to a system and method for mass transfer of micro-LEDs during display manufacturing.

紅-綠-藍(RGB)顯示器由多個畫素組成,這些畫素發出三種波長的光,對應可見光中的紅光、綠光和藍光。這些畫素的RGB部分(每個部分被稱為子畫素)以系統化的方式進行通電,從而疊加以產生可見光譜中的顏色。不同的顯示器其生成RGB圖像的方式也不同。液晶顯示器(Liquid Crystal Displays,LCD)是習知最流行的技術,其藉由使用白色光源(通常為發出熒光的白色LED)照射子畫素上的彩色濾光片,從而產生RGB圖像。白光中包含的一部分波長的光被吸收,另一部分波長的光則藉由彩色濾光片透射。因此,一台LCD顯示器的效率可能低於4%,並且其對比度受到從液晶單元格(cell)中漏出的光的限制。有機發光二極體(Organic Light Emitting Diode,OLED)顯示器藉由激發每一子畫素中的有機發光材料從而直接發射出相應波長的光,進而產生RGB光線。OLED畫素為直接發光,因此顯示器的對比度較高,但是有機材料會隨時間發生劣化,從而導致圖像老化。 A red-green-blue (RGB) display consists of multiple pixels that emit three wavelengths of light, corresponding to red, green, and blue in visible light. The RGB parts of these pixels (each part is called a subpixel) are energized in a systematic way, and when superimposed, they produce the colors in the visible light spectrum. Different displays produce RGB images in different ways. Liquid Crystal Displays (LCDs), the most popular technology, produce RGB images by illuminating color filters on the subpixels with a white light source (usually a fluorescent white LED). Some wavelengths of light contained in the white light are absorbed, while others are transmitted by the color filters. As a result, the efficiency of an LCD display can be less than 4%, and its contrast is limited by the light that leaks out of the liquid crystal cells. Organic Light Emitting Diode (OLED) displays generate RGB light by stimulating the organic light-emitting material in each subpixel, causing it to directly emit light of the corresponding wavelength. Because OLED pixels emit light directly, the display has a higher contrast ratio. However, the organic material degrades over time, causing image burn-in.

第三種也即本申請涉及的顯示器技術為微型發光二極體顯示器,其使用微型(主體直徑為5-150微米(μm))無機LED作為子畫素並直接發光。無機微型發光二極體顯示器相較於其他顯示器具有很多優勢,與LCD顯示器相比,微型發光二極體顯示器具有超過50,000:1的對比度以及更高的效率。不同於OLED顯示器,無機LED不會出現老化現象,並且其可以達到的亮度明顯更高。 The third type of display technology, and the one covered by this application, is microLED displays, which use tiny (5-150 micrometers (μm) in diameter) inorganic LEDs as subpixels to directly emit light. Inorganic microLED displays offer numerous advantages over other display technologies. Compared to LCDs, they boast contrast ratios exceeding 50,000:1 and higher efficiency. Unlike OLED displays, inorganic LEDs do not experience aging and can achieve significantly higher brightness.

習知的主流的高清晰度電視(High Definition Television,HDTV)分辨率標準的電視具有兩百萬畫素(或六百萬子畫素),分辨率更高的4K和8K標準分別為八百萬和三千三百萬畫素。即使平板電腦和手機中使用的相對較小的顯示屏也有數百萬畫素,其顯示屏的分辨率超過每英寸六百畫素(ppi)。因此,採用微型發光二極體的顯示屏的製造,要求以較低的成本對畫素間距不同的大面積微型發光二極體陣列進行組裝,從而可以製造出各種尺寸和分辨率的顯示器。最傳統的微型發光二極體陣列組裝技術被稱為拾放技術,因為每個微型發光二極體都是獨立的從載體上拾取並放置到基板上,如下所述。由於每個微型發光二極體都是單獨處理的,因此組裝的過程非常緩慢。 The mainstream high-definition television (HDTV) resolution standard is known to have two million pixels (or six million subpixels), while the higher-resolution 4K and 8K standards have eight and 33 million pixels, respectively. Even the relatively small displays used in tablets and mobile phones have millions of pixels, with resolutions exceeding 600 pixels per inch (ppi). Therefore, the manufacture of displays using microdiodes requires the low-cost assembly of large-area microdiode arrays with varying pixel pitches, allowing the production of displays of various sizes and resolutions. The most traditional microdiode array assembly technology is called pick-and-place technology, because each microdiode is individually picked from a carrier and placed on a substrate, as described below. Because each micro-LED is handled individually, the assembly process is very slow.

圖1A-圖1C描繪了基於氮化鎵(Gallium Nitride,GaN)的LED堆疊的截面圖(圖1A)、兩個完全加工的垂直微型發光二極體的截面圖(圖1B)和表面貼裝微型發光二極體(圖1C)(習知技術)的截面圖。已經廣泛採用的用於普通照明的基於GaN的高亮度LED已經創建了一個複雜的製造系統,因此在顯示器上應用的微型發光二極體是基於該行業已有的投資上的。在一系列複雜的高溫金屬有機化學氣相沉積(MOCVD)步驟中製造發射藍色(約440納米(nm))波長的GaN基LED,以生產圖1A中橫截面所示的垂直LED結構。製造過程在直徑為50-200毫米(mm)的拋光藍寶石、矽或碳化矽(SiC)襯底上進行。藉由沉積未摻雜的GaN以及選擇性的沉積氮化鋁(AlN)緩衝層來製備表面,從而產生具有低缺陷以及GaN晶格常數的晶格表面。由於需要調整初始沉積的厚度和溫度來補償襯底與GaN之間的晶格失配,也即增加厚度以改善表面質量,因此高效率器件的厚度均高於3μm左右。由於MOCVD沉積工藝複雜且昂貴,因此優化微型發光二極體工藝以最有效地利用生長晶圓的整個區域非常重要。 Figures 1A-1C depict cross-sections of a gallium nitride (GaN)-based LED stack (Figure 1A), two fully processed vertical micro-LEDs (Figure 1B), and a surface-mount micro-LED (Figure 1C) (known technology). The widespread adoption of GaN-based high-brightness LEDs for general lighting has created a complex manufacturing system, so micro-LEDs for display applications build on existing investments in the industry. GaN-based LEDs emitting in the blue (approximately 440 nanometers (nm)) are fabricated in a complex series of high-temperature metal-organic chemical vapor deposition (MOCVD) steps to produce the vertical LED structure shown in the cross-section of Figure 1A. Fabrication takes place on a polished sapphire, silicon, or silicon carbide (SiC) substrate with a diameter of 50-200 mm. The surface is prepared by depositing undoped GaN and, optionally, an aluminum nitride (AlN) buffer layer, resulting in a surface with low defects and a high GaN lattice constant. Because the initial deposition thickness and temperature must be adjusted to compensate for the lattice mismatch between the substrate and the GaN, increasing the thickness to improve surface quality leads to high-efficiency devices with thicknesses exceeding approximately 3μm. Because the MOCVD deposition process is complex and expensive, optimizing the microLED process to most efficiently utilize the entire area of the growth wafer is crucial.

在初步生長以形成晶體GaN表面後,藉由添加矽摻雜生成第一個LED層,以形成用於陰極的n+GaN。選擇性地,所述堆疊可以包括針對電子注入和空穴阻擋進行調整的層。接下來,沉積具有氮化鎵銦(InxGa1-xN)和GaN交替層的多量子阱(Multiple Quantum Well,MQW)結構,其中銦含量和所述層的厚度決定了器件的發射波長。增加銦含量會使發射峰向更長的波長移動,但也會增加由於晶格失配引起的應力,因此無法製作出高效率的GaN器件用於紅光發射,綠光LED的效率也低於藍光LED。在形成MQW之後,堆疊結構還可以包 括針對電子阻擋和空穴注入進行調整的層。藉由沉積鎂(Mg)摻雜GaN以形成p+陽極層,從而完成MOCVD層序列。 After initial growth to form a crystalline GaN surface, the first LED layer is generated by adding silicon doping to form n+GaN for the cathode. Optionally, the stack can include layers tuned for electron injection and hole blocking. Next, a multiple quantum well (MQW) structure with alternating layers of indium gallium nitride (InxGa1-xN) and GaN is deposited, where the indium content and the thickness of the layer determine the emission wavelength of the device. Increasing the indium content shifts the emission peak to longer wavelengths, but also increases the stress caused by lattice mismatch, making it impossible to produce high-efficiency GaN devices for red light emission, and the efficiency of green LEDs is lower than that of blue LEDs. After forming the MQW, the stack structure can also include layers tuned for electron blocking and hole injection. The MOCVD layer sequence is completed by depositing magnesium (Mg)-doped GaN to form the p+ anode layer.

用於一般照明的LED(每側高達3-4mm)遠大於應用於微型發光二極體顯示器中的微型發光二極體(直徑為5-150μm),因此對圖案化及電極的要求都明顯不同。微型發光二極體需要用焊接材料或者非對稱導電膜(Asymmetric Conductive Film,ACF)綁定到基板電極上,而大型號LED通常是藉由引線綁定或藉由焊膏綁定到引線框架上。由於微型發光二極體的體積非常小,因此在圖案化過程中MOCVD晶圓上的大部分區域會被移除,從而減少每個晶圓的可用發光面積。LED晶圓相對較貴,而製造微型發光二極體時需要的高分辨率進一步拉高了成本,因此盡可能有效的使用發光區域以最大程度地降低微型發光二極體顯示器的材料成本是十分重要的。 LEDs used for general lighting (up to 3-4mm per side) are much larger than the microdiodes used in microdiode displays (5-150μm in diameter), resulting in significantly different patterning and electrode requirements. Microdiodes require soldering materials or asymmetric conductive film (ACF) to be bonded to substrate electrodes, while large LEDs are typically wire-bonded or soldered to a lead frame. Due to the very small size of microdiodes, a large area on the MOCVD wafer is removed during the patterning process, reducing the available light-emitting area per wafer. LED wafers are relatively expensive, and the high resolution required to manufacture micro-LEDs further increases costs. Therefore, it is crucial to use the light-emitting area as efficiently as possible to minimize the material cost of micro-LED displays.

在最簡單的工藝流程中,藉由沉積一薄(幾納米)氧化鎳(NiOX)以匹配p+GaN工作函數,並沉積一層厚度為50-300nm的氧化銦錫(Indium Tin Oxide,ITO),以在MOCVD堆棧上形成透明導電電極。之後對沉積後的堆棧結構進行圖案化和蝕刻,通常會使用基於氯氣(Cl2)的反應性離子蝕刻(Reactive Ion Etch,RIE)工藝,以生產具有最小實際尺寸和間距的單個微型發光二極體,特別是當以高效率生產微型發光二極體時,LED結構的厚度僅為3-5μm,因此LED結構的厚度限制了可以成功蝕刻的最小空間。 In the simplest process flow, a transparent conductive electrode is formed on the MOCVD stack by depositing a thin layer (a few nanometers) of nickel oxide (NiOX) to match the p+ GaN work function, followed by a 50-300nm thick layer of indium tin oxide (ITO). The deposited stack is then patterned and etched, typically using a chlorine (Cl2)-based reactive ion etch (RIE) process, to produce individual microLEDs with the smallest practical size and pitch. When producing microLEDs at high efficiency, the thickness of the LED structure is only 3-5μm, so the minimum space that can be successfully etched is limited by the thickness of the LED structure.

如圖1C示意性所示,在蝕刻出LED的輪廓後,會進行額外的處理,從而在陽極上形成電極。為了防止漏電並且蝕刻出用於連接ITO層的開口,通常會設置一鈍化層,所述鈍化層通常由等離子體增強化學氣相沉積(Plasma-enhanced Chemical Vapor Deposition,PECVD)二氧化矽(Silicon Dioxide,SiO2)或選擇性的包括設於表面的薄原子沉積(Atomic Layer Deposition,ALD)氧化鋁(Aluminum Oxide,Al2O3)層。該陽極結構藉由沉積電極堆棧結構來完成,所述電極堆棧結構包括如銦/錫(In/Sn)或金、鍺(Au/Ge)合金之類的材料。 As schematically shown in Figure 1C, after etching the outline of the LED, additional processing is performed to form the electrode on the anode. To prevent leakage and etch openings for connecting to the ITO layer, a passivation layer is typically applied. The passivation layer is typically composed of plasma-enhanced chemical vapor deposition (PECVD) silicon dioxide (SiO2) or optionally includes a thin atomic layer deposition (ALD) aluminum oxide (Al2O3) layer on the surface. The anode structure is completed by depositing an electrode stack structure comprising materials such as indium/tin (In/Sn) or gold and germanium (Au/Ge) alloys.

圖2A描述了使用雷射剝離(Laser Lift Off,LLO)從藍寶石襯底上移除微型發光二極體的過程。圖2B描述了從載體晶圓上器件將移動並放置到顯示基板上的拾放過程。圖2C描述了微型發光二極體陽極與基板電極的連接(習知技術)。具體來說,在圖2A中,製作完成的微型發光二極體藉由一黏合膠層 綁定到載體晶圓上,同時藉由雷射剝離從藍寶石襯底上移除。在圖2B中,可以藉由拾取頭從載體上移除一微型發光二極體,並將其放置在一子畫素上,使其陽極與基板上對應的電極電連接。畫素是藉由在微型發光二極體上塗覆合適的電介質(例如可光刻圖案的聚醯亞胺)來完成的,同時使微型發光二極體的陰極與基板上的電極連接。金屬互連被沉積和圖案化以形成如圖2C所示的連接。 Figure 2A illustrates the process of removing a microLED from a sapphire substrate using laser lift-off (LLO). Figure 2B depicts the pick-and-place process for moving and placing the device from a carrier wafer onto a display substrate. Figure 2C illustrates the connection between the microLED anode and the substrate electrode (known practice). Specifically, in Figure 2A, the fabricated microLED is bonded to the carrier wafer via an adhesive layer and simultaneously removed from the sapphire substrate using LLO. In Figure 2B, a microLED is removed from the carrier using a pick-up head and placed onto a subpixel, electrically connecting its anode to the corresponding electrode on the substrate. The pixel is completed by coating the micro-LED with a suitable dielectric (such as photolithographically patternable polyimide), while connecting the cathode of the micro-LED to an electrode on the substrate. Metal interconnects are deposited and patterned to form the connections shown in Figure 2C.

發出波長約630nm紅光的LED,其通常有生長在砷化鎵(GaAs)上的磷化鋁鎵銦(AlGaInP)製成,由於GaAs是不透明的,因此不能使用雷射剝離技術從GaAs襯底上剝離LED。因此若想將紅光LED從襯底上剝離,可以完全蝕刻基板,或者使用選擇性蝕刻(通常使用氯化氫(HCl):乙酸)來底切並剝離LED。LED的尺寸(橫截面)與GaN通用照明LED相似(尺寸為150-1000μm)。在專利:US10,804,426中更全面地描述了AlGaInP LED工藝,該專利以引用方式併入本文。 LEDs emitting red light at a wavelength of approximately 630 nm are typically made of aluminum gallium indium phosphide (AlGaInP) grown on gallium arsenide (GaAs). Because GaAs is opaque, laser lift-off cannot be used to remove the LED from the GaAs substrate. Therefore, to remove the red LED from the substrate, the substrate can be completely etched, or a selective etch (typically using hydrogen chloride (HCl):acetic acid) can be used to undercut and remove the LED. The LED's dimensions (cross-section) are similar to those of GaN general-purpose lighting LEDs (150-1000 μm). The AlGaInP LED process is more fully described in US Patent No. 10,804,426, which is incorporated herein by reference.

上述的拾放組裝流程存在一些重要的問題,會導致較高的成本和較低的產量。具體來說,組裝過程本質上是串行的,因此組裝數百萬個微型發光二極體需要很長的時間,並且成本很高。微型發光二極體本身的小尺寸使得抓取頭很難製作,並且抓取儀器的邊緣很可能在抓取過程中干擾相鄰的微型發光二極體或在組裝過程中干擾畫素之間的反射器結構。上述的單個拾放方法可以藉由使用巨量轉移頭同時抓取並轉移多個微型發光二極體來擴展為並行過程。然而,這種巨量轉移法的質量可能會很差,這是由於同時轉移的一組微型發光二極體中會存在有缺陷的元件,並且每個微型發光二極體之間的間距是由生長在晶圓上的元件的間距決定的。 The pick-and-place assembly process described above has several significant issues that result in high costs and low throughput. Specifically, the assembly process is serial in nature, so assembling millions of microLEDs takes a long time and is very costly. The small size of the microLEDs themselves makes the gripper heads difficult to manufacture, and the edges of the gripper are likely to interfere with adjacent microLEDs during the gripping process or with the reflector structures between pixels during assembly. The single pick-and-place method described above can be expanded to a parallel process by using a mass transfer head to simultaneously grasp and transfer multiple microLEDs. However, the quality of this mass transfer method can be poor because defective components may be present in a group of micro-LEDs transferred simultaneously, and the pitch between each micro-LED is determined by the pitch of the components grown on the wafer.

圖3A-3H描述了一個巨量轉移法的示例(習知技術)。巨量轉移法即為將陣列排列的多個微型發光二極體作為整體轉移到顯示基板上,習知已經被廣泛的開發來解決串行拾放組裝的低吞吐量問題。在最簡單的質量轉移過程中,矩形壓印印章從載體上拾取一個矩形的微型發光二極體陣列,並將微型發光二極體壓靠在顯示基板上,使每一微型發光二極體與一相應的電極結合。由於製作RGB顯示器需要考慮不同顏色的微型發光二極體,轉移壓印印章被安排為每三個微型發光二極體拾取一次,從而為其他兩種子畫素顏色的微型發光二極體留出空間。對於圖2C所示的表面貼裝微型發光二極體,組裝過程按如下順序進行: Figures 3A-3H illustrate an example of a mass transfer method (known in the art). Mass transfer involves transferring a plurality of microLEDs arranged in an array as a whole onto a display substrate. This method has been widely developed to address the low throughput issues of serial pick-and-place assembly. In the simplest mass transfer process, a rectangular stamp picks up a rectangular array of microLEDs from a carrier and presses them against the display substrate, bonding each microLED to a corresponding electrode. Because RGB displays require micro-LEDs of different colors, the transfer stamp is arranged to pick up every three micro-LEDs, leaving space for micro-LEDs of the other two sub-pixel colors. For the surface-mount micro-LED shown in Figure 2C, the assembly process proceeds as follows:

1)為每種顏色的微型發光二極體準備單獨的MOCVD晶片,每個微型發光二極體之間具有適當的尺寸和間距。相鄰微型發光二極體之間的空隙被稱為間距。請參閱圖3A。每個微型發光二極體都有一個陰極和陽極,用於連接到顯示器基板。微型發光二極體陣列藉由雷射剝離從生長晶片上移除並保持在載體襯底(圖未示)上。 1) Prepare a separate MOCVD wafer for each color of microdiode, with each microdiode having the appropriate size and spacing. The space between adjacent microdiodes is called the pitch. See Figure 3A. Each microdiode has a cathode and anode for connection to the display substrate. The microdiode array is removed from the growth wafer by laser lift-off and held on a carrier substrate (not shown).

2)顯示器基板上(圖3B)設置有多組陰極電極和陽極電極,每一組電極間的間距是晶圓上每一微型發光二極體之間間距的若干倍,因此電極與轉移壓印印章上的微型發光二極體的位置會相互匹配。這個間距決定了顯示器最終的分辨率。所述電極可以是銅、氧化銦錫/鋁(ITO/Al)、金或者如錫/銦(Sn/In)的焊料。還可以使用ACF膜來覆蓋電極。藉由確定顯示器面板上的電極和微型發光二極體的材料,可以藉由下述步驟5中的後續綁定工藝來形成歐姆接觸。 2) Multiple sets of cathode and anode electrodes are arranged on the display substrate (Figure 3B). The spacing between each set of electrodes is several times the spacing between each micro-LED on the wafer, so that the electrodes match the positions of the micro-LEDs on the transfer stamp. This spacing determines the ultimate resolution of the display. The electrodes can be made of copper, indium tin oxide/aluminum (ITO/Al), gold, or solder such as tin/indium (Sn/In). An ACF film can also be used to cover the electrodes. By determining the materials of the electrodes and micro-LEDs on the display panel, ohmic contacts can be formed through the subsequent bonding process in step 5 below.

3)根據拾取點與顯示器上子畫素間距相匹配的位置來準備壓印印章。習知應用於固定每一微型發光二極體的拾取機制包括彈性體、膠帶、靜電和磁場。圖3C描述了一個大小為3*3畫素的壓印印章,但實際上的壓印印章通常會裝配數百個畫素。 3) Prepare the stamp with the pickup points aligned with the subpixel pitch on the display. Known pickup mechanisms used to secure each microLED include elastomers, tape, electrostatics, and magnetic fields. Figure 3C depicts a 3x3 pixel stamp, but actual stamps typically accommodate hundreds of pixels.

4)請參閱圖3D,壓印印章與承載第一種顏色的微型發光二極體的載體襯底對齊放置,並使壓印印章與載體襯底接觸,從而使固定結構可以抓取多個微型發光二極體並將其從載體襯底上移除。 4) Referring to Figure 3D, the embossing stamp is aligned with the carrier substrate carrying the first color of micro-LEDs, and the embossing stamp contacts the carrier substrate, allowing the fixing structure to grasp the multiple micro-LEDs and remove them from the carrier substrate.

5)請參閱圖3E,填充好的壓印印章與第一組顯示器基板上的電極對齊放置。 5) Refer to Figure 3E. The filled stamp is aligned with the electrodes on the first set of display substrates.

6)請參閱圖3F,將壓印印章壓靠並接觸顯示器基板,通常會一併進行加熱以使微型發光二極體電極與顯示器基板上的電極形成綁定結構。在形成綁定並充分冷卻以固定微型發光二極體之後,將壓印印章移除以供重新使用。 6) Referring to Figure 3F, the embossing stamp is pressed against the display substrate and is typically heated to form a bond between the micro-LED electrodes and the electrodes on the display substrate. After the bond is formed and sufficiently cooled to secure the micro-LEDs, the embossing stamp is removed for reuse.

7)如圖3G-圖3H所示,分別對第二種顏色和第三種顏色的微型發光二極體進行相同的操作,從而形成RGB顯示陣列。 7) As shown in Figures 3G and 3H, the same operation is performed on the second and third color micro-LEDs, respectively, to form an RGB display array.

上述巨量轉移方法進行組裝是可行的,並且已經應用於顯示器的製造中,但仍然存在一些問題導致產品良率較低以及產品成本較高。首先,在圖3B中,顯示器在x方向和y方向上的間距只能為MOCVD晶圓上微型發光二極體之間間距的整數倍,圖中示例為3*2。而一個完善的顯示器製造技術必須能夠製造出符合行業標準的不同尺寸的螢幕,如4K(3840*2160畫素),因此需要一種可以改變微型發光二極體在壓印印章上間距的技術(間距擴展)。也可以為每 個顯示器就尺寸和分辨率訂製MOCVD晶圓上的微型發光二極體的尺寸,但這增加了不必要的成本。其次,拾取裝置必須在連接強度的大小上取得平衡,如果連接強度過小,一些微型發光二極體就不會從載體襯底上脫離,從而在陣列中留下間隙。相反,若連接強度過大,微型發光二極體在焊接在基板上之後也會被強行移除。在這兩種情況下,都會使子畫素的亮度降低,這在顯示器中是不能容忍的。最後,轉移壓印印章的結構複雜且難以製造。連接點必須小於微型發光二極體之間的間距從而避免壓印印章干擾到相鄰的微型發光二極體。這對於需要產生局部場(如靜電或磁力)的複雜的固定方法來說很困難。壓印印章還容易受到污染和損壞,尤其是由聚二甲基矽氧烷(PDMS)等彈性體製成的壓印印章,因此如何進行有效的清潔以供重複使用壓印印章也非常重要。 While the mass transfer method described above is feasible for assembly and has already been applied in display manufacturing, it still presents several challenges, resulting in low product yields and high costs. First, in Figure 3B, the display's x- and y-pitch spacing can only be an integer multiple of the pitch between the microLEDs on the MOCVD wafer—3x2 in the example shown. A comprehensive display manufacturing technology must be able to produce screens of varying sizes that meet industry standards, such as 4K (3840x2160 pixels). Therefore, a technique that can vary the pitch of the microLEDs on the stamp (pitch expansion) is required. Alternatively, the size of the microLEDs on the MOCVD wafer can be customized for each display based on size and resolution, but this adds unnecessary cost. Secondly, the pickup device must strike a balance in terms of the strength of the connection. If the connection strength is too weak, some micro-LEDs will not detach from the carrier substrate, leaving gaps in the array. Conversely, if the connection strength is too strong, the micro-LEDs will be forcibly removed after being soldered to the substrate. In both cases, the brightness of the sub-pixel will be reduced, which is unacceptable in a display. Finally, the structure of the transfer stamp is complex and difficult to manufacture. The connection point must be smaller than the distance between the micro-LEDs to avoid the stamp interfering with adjacent micro-LEDs. This is difficult for complex fixing methods that require the generation of local fields (such as electrostatic or magnetic forces). Embossed stamps are also susceptible to contamination and damage, especially those made of elastomers such as polydimethylsiloxane (PDMS). Therefore, effective cleaning of embossed stamps for reuse is crucial.

為了說明巨量轉移壓印工藝的缺陷,圖3H描述了幾種可能出現的故障情況:故障a:由於在拾取時壓印印章的黏合力較差導致缺少微型發光二極體;故障b:因壓印印章上存在污染導致微型發光二極體錯放;故障c:由於轉印壓印印章污染帶來的顆粒;故障d:破損的微型發光二極體;故障e:由於MOCVD工藝的缺陷導致的微型發光二極體短路:故障f:由於微型發光二極體被壓印印章強行移除導致的電極損壞。 To illustrate the defects of the mass transfer imprint process, Figure 3H depicts several possible failure scenarios: Fault a: Missing microLED due to poor adhesion of the imprint stamp during pickup; Fault b: Misplaced microLED due to contamination on the imprint stamp; Fault c: Particles introduced by contamination from the transfer imprint stamp; Fault d: Broken microLED; Fault e: Short circuit of the microLED due to defects in the MOCVD process; Fault f: Damaged electrodes due to the microLED being forcibly removed by the imprint stamp.

圖4A和圖4B描述了在100毫米晶圓上使用14毫米壓印印章(圖4A)用以壓印拾取的示例性區域覆蓋。其中,20%的微型發光二極體最終保留在晶圓上,有三個壓印印章上存在有缺陷的微型發光二極體。上述質量轉移過程的另一個限制是壓印印章的方形形狀,這與用於以MOCVD生成LED的圓形晶圓不匹配。圖4A給出的是一種典型的在100mm晶圓上使用14*14mm壓印印章時的排列情況。採用大面積的壓印印章,可以提高組裝的速度,代價是會在生長晶圓上留下更多的微型發光二極體。由於需要滿足填滿所有壓印印章的要求,因此晶圓上有較大的區域無法使用壓印印章。在上述示例中,被放棄的質量合格的微型發光二極體約佔總數的20%,這直接增加了成本。此外,對於有缺陷的微型發光二極體,必須要進行修復或者捨棄受到影響的壓印印章。上述示例僅出於說明目的描述了隨機的三個缺陷,若在該示例中捨棄有缺陷的壓印印章,則只有約70%的初始微型發光二極體可被用於顯示器的製造。 Figures 4A and 4B depict exemplary area coverage for emboss pick-up using a 14 mm embossing stamp (Figure 4A) on a 100 mm wafer. Of these, 20% of the micro-LEDs ultimately remained on the wafer, with three of the embossing stamps containing defective micro-LEDs. Another limitation of the mass transfer process described above is the square shape of the embossing stamp, which does not match the round wafers used to grow LEDs using MOCVD. Figure 4A shows a typical arrangement using a 14*14 mm embossing stamp on a 100 mm wafer. Using a larger embossing stamp can increase assembly speed, at the expense of leaving more micro-LEDs on the growth wafer. Because the requirement to fill all embossing stamps is met, large areas on the wafer cannot be used with the stamps. In the above example, approximately 20% of the qualified micro-LEDs are discarded, directly increasing costs. Furthermore, defective micro-LEDs must be repaired or the affected stamps discarded. The above example describes three random defects for illustrative purposes only. If the defective stamps were discarded in this example, only approximately 70% of the initial micro-LEDs would be usable in display manufacturing.

巨量轉移法有一個顯著的優勢,即綁定過程是在對微型發光二極體施加壓力的情況下進行的,因此兩個鍵合電極之間具有良好的機械接觸。這確保了電極間具有大面積的接觸。機械接觸還會破壞表面上絕緣的氧化物,從而改善焊接材料的濕潤性。ACF鍵合同樣需要壓力,以使導電填充材料與微型發光二極體以及顯示器基板上的電極形成硬接觸。 A significant advantage of the mass transfer method is that the bonding process is performed under pressure on the microLED, resulting in good mechanical contact between the two bonded electrodes. This ensures contact over a large area between the electrodes. Mechanical contact also breaks down insulating oxides on the surface, improving the wettability of the solder material. ACF bonding similarly requires pressure to ensure that the conductive filler material forms a hard contact with the microLED and the electrodes on the display substrate.

若有一種結構和方法可以填充微型發光二極體顯示器的巨量轉移組裝的載體襯底,且可以如下方式提高組裝的靈活性和產量,則是有利的:1.可以藉由簡單的間距拓展實現任意顯示分辨率;2.可以製造一系列沒有缺失、損壞或短路等設備缺陷的微型發光二極體(已知芯片良好);3.可以藉由大規模並行轉移的方法填充和轉移壓印印章來提高巨量轉移的組裝速度;4.使用簡單的轉移壓印印章,具有較低的製造成本,可以藉由強力的清洗以重新使用;5.可以採用簡單且不損傷顯示基板的壓印機構;6.可以從有缺陷的壓印印章中回收多餘的微型發光二極體。 It would be advantageous to have a structure and method for filling the carrier substrate for mass transfer assembly of micro-LED displays that can improve assembly flexibility and yield in the following ways: 1. Any display resolution can be achieved through simple pitch expansion; 2. A series of micro-LEDs (known good chips) can be manufactured without device defects such as missing, damaged, or shorted components; 3. The mass transfer assembly speed can be increased by filling and transferring the embossing stamps through a large-scale parallel transfer method; 4. A simple transfer embossing stamp can be used, which has low manufacturing costs and can be reused through strong cleaning; 5. A simple embossing mechanism can be employed that does not damage the display substrate; and 6. Excess micro-LEDs can be recovered from defective embossing stamps.

本申請提供一種藉由流體組裝在載體襯底或轉移壓印印章上製備微型發光二極體陣列的方法以及相關結構。可以將組裝好的微型發光二極體應用到顯示器基板上,藉由巨量轉移方法進行綁定。微型發光二極體藉由傳統的MOCVD方法在晶圓上製成,其形狀選擇為便於流體組裝和壓印到顯示器基板上的樣式。 This application provides a method and related structure for fabricating an array of microLEDs by fluid assembly onto a carrier substrate or transfer stamp. The assembled microLEDs can be applied to a display substrate and bonded using a mass transfer method. The microLEDs are fabricated on a wafer using conventional MOCVD methods, with their shape chosen to facilitate fluid assembly and stamping onto the display substrate.

因此,本申請提供一種微型發光二極體巨量轉移壓印系統,包括具有頂面的壓印印章基板。在所述頂面上形成有陣列設置的壓印印章基板捕集位置,每一所述捕集位置均設有柱狀凹槽,用於暫時固定從微型發光二極體的底面延伸的龍骨。在微型發光二極體為表面貼裝型時,其具有一平面的頂表面,所述平面的頂表面包括第一電極和第二電極。當微型發光二極體為垂直型時,其具有一平面的頂表面,所述平面的頂表面帶有第一電極,此時所述龍骨為一導電的第二電極。所述壓印系統還包括一流體組裝載體襯底,所述載體襯底平 面的頂表面上形成有陣列設置的阱,所述阱的陣列具有分隔相鄰阱的間距,所述間距與所述壓印印章基板上分隔相鄰所述捕集位置的間距相匹配。 Therefore, the present application provides a micro-LED mass transfer imprinting system, comprising an imprinting stamp substrate having a top surface. An array of imprinting stamp substrate capture locations is formed on the top surface, each of which is provided with a columnar groove for temporarily securing a keel extending from the bottom surface of the micro-LED. When the micro-LED is a surface mount type, it has a planar top surface, which includes a first electrode and a second electrode. When the micro-LED is a vertical type, it has a planar top surface, which includes the first electrode, and the keel is a conductive second electrode. The imprinting system also includes a fluid assembly carrier substrate having an array of wells formed on its planar top surface. The array of wells has a spacing between adjacent wells that matches the spacing between adjacent capture locations on the imprinting stamp substrate.

一種關聯的微型發光二極體巨量轉移方法包括:提供上述帶有阱陣列的流體組裝載體襯底,並提供上述的壓印印章基板,其中陣列中每一捕集位置配置有與所述載體襯底上的阱相匹配的柱狀凹槽。該方法使用流體組裝工藝,使得微型發光二極體填充進所述載體襯底的阱中。該方法將壓印印章基板的頂表面壓靠在載體襯底的頂表面上,使每一所述捕集位置與相應的阱對應,從而將微型發光二極體從載體襯底轉移到壓印印章基板上。每一捕集位置的凹槽承載從微型發光二極體底面延伸出的龍骨,並藉由對龍骨的束縛,將微型發光二極體固定到壓印印章基板上。載體襯底的使用消除了MOCVD晶圓上微型發光二極體之間的間距帶來的限制,從而允許將各種壓印印章基板間距應用於不同的顯示器基板尺寸和分辨率中。 A related method for mass-transferring micro-LEDs includes providing the aforementioned fluid assembly carrier substrate with a well array and the aforementioned embossing stamp substrate, wherein each trapping location in the array is configured with a columnar recess that matches a well on the carrier substrate. The method utilizes a fluid assembly process to fill the wells of the carrier substrate with micro-LEDs. The method then presses the top surface of the embossing stamp substrate against the top surface of the carrier substrate, aligning each trapping location with a corresponding well, thereby transferring the micro-LEDs from the carrier substrate to the embossing stamp substrate. Each trapping site groove supports a keel extending from the bottom surface of the microLED. By constraining the keel, the microLED is secured to the imprinting stamp substrate. The use of a carrier substrate eliminates the limitations imposed by the spacing between microLEDs on the MOCVD wafer, allowing a variety of imprinting stamp substrate pitches to be used for different display substrate sizes and resolutions.

該方法還提供具有微型發光二極體連接墊陣列的顯示基板,其中每個微型發光二極體連接墊包括至少一形成於頂表面的電極,所述電極與一下方的列和行控制線的矩陣電連接。所述連接墊具有分隔相鄰位置的間距,該間距與分隔壓印印章基板中相鄰捕集位置的間距相匹配。該方法將壓印印章基板頂表面壓在顯示基板的頂表面上,每個捕集位置與相應的微型發光二極體位置連接,並將多個微型發光二極體從壓印印章基板轉移到顯示基板的多個連接墊上。一方面,將微型發光二極體轉移到顯示基板的連接墊上的步驟包括加熱顯示基板以將多個微型發光二極體綁定到多個連接墊上。在RGB顯示的情況下,該方法可以依次將捕集位置上設有第一波長微型發光二極體、第二波長微型發光二極體、第三波長微型發光二極體的壓印印章基板進行壓合,或者一個單獨的壓印印章基板對應於一個波長的微型發光二極體。 The method also provides a display substrate having an array of micro-LED connection pads, wherein each micro-LED connection pad includes at least one electrode formed on the top surface, the electrode being electrically connected to an underlying matrix of column and row control lines. The connection pads have a spacing separating adjacent locations that matches the spacing separating adjacent trapping locations in the embossing stamp substrate. The method presses the top surface of the embossing stamp substrate against the top surface of the display substrate, connecting each trapping location to a corresponding micro-LED location, and transferring a plurality of micro-LEDs from the embossing stamp substrate to the plurality of connection pads on the display substrate. In one aspect, transferring the micro-LEDs to the connection pads of the display substrate includes heating the display substrate to bind the plurality of micro-LEDs to the plurality of connection pads. In the case of an RGB display, the method can sequentially laminate an embossing stamp substrate having micro-LEDs of a first wavelength, a second wavelength, and a third wavelength at the capture locations, or a single embossing stamp substrate can be used for each micro-LED of a wavelength.

本申請還提供一種微型發光二極體巨量轉移方法,該方法採用具有平面的頂表面的流體組裝壓印印章基板,所述頂表面上形成有多個具有第一周邊形狀、深度和平面的底表面的捕集位置。藉由流體組裝過程,所述捕集位置可以被具有第一周邊形狀的微型發光二極體填充,所述微型發光二極體具有大於捕集位置深度的厚度,與捕集位置底表面接觸的底表面,一個平面的頂表面以及延伸出所述捕集位置的第一電極,以及一個固定機構。一方面所述固定機構為一形成於所述微型發光二極體頂表面的龍骨,所述龍骨既可以是與第一 電極連接的導電的龍骨,也可以是在微型發光二極體固定在壓印印章基板上之後移除的臨時的不導電的龍骨。另一方面,所述固定機構為設於於每一微型發光二極體底表面的包括共軛生物分子對的第一組件。在這種情況下,每一捕集位置的底表面設有一包括共軛生物分子對的第二組件。 This application also provides a method for mass-transferring micro-LEDs, which utilizes a fluid assembly stamp substrate having a planar top surface, on which a plurality of trapping sites having a first peripheral shape, a depth, and a planar bottom surface are formed. Through a fluid assembly process, the trapping sites can be filled with micro-LEDs having a first peripheral shape, a thickness greater than the trapping site depth, a bottom surface in contact with the trapping site bottom surface, a planar top surface, a first electrode extending beyond the trapping site, and a securing mechanism. In one aspect, the fixing mechanism is a keel formed on the top surface of the microLED. This keel can be either a conductive keel connected to the first electrode or a temporary non-conductive keel that is removed after the microLED is fixed to the stamp substrate. In another aspect, the fixing mechanism is a first component comprising a conjugated biomolecule pair disposed on the bottom surface of each microLED. In this case, a second component comprising a conjugated biomolecule pair is disposed on the bottom surface of each trapping site.

如上所述,該方法提供一具有平面的頂表面以及微型發光二極體連接墊陣列的顯示基板,每一微型發光二極體連接墊包括形成於頂表面的第一電極,該第一電極與其基板下方的列和行控制線的矩陣電連接。所述顯示基板相鄰的阱之間的間距與所述壓印印章基板相鄰的捕集位置的間距相匹配。該方法壓印將印章基板的頂表面壓靠到顯示基板的頂表面,使每一捕集位置填充有一微型發光二極體,並且將多個微型發光二極體從壓印印章基板轉移到顯示基板的微型發光二極體連接墊上。同樣,在轉移過程中,可以對顯示基板加熱,從而促進電極綁定。 As described above, the method provides a display substrate having a planar top surface and an array of micro-LED connection pads. Each micro-LED connection pad includes a first electrode formed on the top surface, the first electrode being electrically connected to a matrix of column and row control lines beneath the substrate. The spacing between adjacent wells in the display substrate matches the spacing between adjacent trapping sites in the embossing stamp substrate. The method embosses the top surface of the stamp substrate against the top surface of the display substrate, filling each trapping site with a micro-LED, and transferring the plurality of micro-LEDs from the embossing stamp substrate to the micro-LED connection pads on the display substrate. Likewise, the display substrate can be heated during the transfer process to facilitate electrode bonding.

本申請還提供一種軸向微型發光二極體巨量轉移方法。該方法提供一種具有平面的頂表面的流體組裝壓印印章基板,所述頂表面上形成有多個捕集位置,所述捕集位置具有一第一周邊形狀、一具有平面的第一深度的中心部分、一具有平面的第二深度的遠端(所述第二深度小於所述第一深度)和一具有平面的第二深度的近端。藉由流體組裝流程,該方法使軸向微型發光二極體填充至捕集位置中,每一佔據相應捕集位置的微型發光二極體具有所述第一周邊形狀、一與所述中心部分連接的主體、並具有一垂直平面主體,所述主體厚度大於所述第一深度但小於二倍所述第一深度。一遠端電極水平平分所述主體並且與所述捕集位置的遠端接觸,所述遠端電極的垂直平面的電極厚度大於所述捕集位置的第二深度但小於二倍所述第二深度。一近端電極具有與所述遠端電極相同的厚度,水平平分所述主體並與所述捕集位置的近端接觸。 The present application also provides a method for mass transfer of axial micro-LEDs. The method provides a fluid assembly stamp substrate having a planar top surface, wherein a plurality of capture locations are formed on the top surface, wherein the capture locations have a first peripheral shape, a central portion having a planar first depth, a distal end having a planar second depth (the second depth is less than the first depth), and a proximal end having a planar second depth. Through a fluid assembly process, the method fills the capture locations with axial micro-LEDs, wherein each micro-LED occupying a corresponding capture location has the first peripheral shape, a main body connected to the central portion, and a vertical planar main body, wherein the main body thickness is greater than the first depth but less than twice the first depth. A distal electrode horizontally bisects the main body and contacts the distal end of the capture site. The electrode thickness of the distal electrode in a vertical plane is greater than the second depth of the capture site but less than twice the second depth. A proximal electrode has the same thickness as the distal electrode, bisects the main body horizontally, and contacts the proximal end of the capture site.

該方法提供一種具有平面的頂面以及微型發光二極體連接墊陣列的顯示基板,每一微型發光二極體連接墊包括形成於頂表面並與其下方的列和行控制線的矩陣電連接的一對電極。所述顯示基板具有一分離相鄰阱的間距,該間距與分離所述壓印印章基板上相鄰捕集位置的間距相匹配。該方法將壓印印章基板的頂表面壓靠在顯示基板的頂表面上,使每一捕集位置與一相應的微型發光二極體接觸,並且將微型發光二極體從壓印印章基板上轉移到顯示器基板上,通常還需要進行加熱以促進電極的綁定。 The method provides a display substrate having a planar top surface and an array of microLED connection pads. Each microLED connection pad includes a pair of electrodes formed on the top surface and electrically connected to a matrix of column and row control lines below it. The display substrate has a spacing separating adjacent wells that matches the spacing separating adjacent trapping sites on the imprinting stamp substrate. The method presses the top surface of the imprinting stamp substrate against the top surface of the display substrate, bringing each trapping site into contact with a corresponding microLED, and transfers the microLEDs from the imprinting stamp substrate to the display substrate. Heating is typically applied to facilitate electrode bonding.

下面將對上述的系統和方法進行具體描述。 The above-mentioned system and method will be described in detail below.

900、900a、900b、900c、1300、1500:壓印印章 900, 900a, 900b, 900c, 1300, 1500: Embossed seals

902、1302、1502:壓印印章頂表面 902, 1302, 1502: Top surface of the embossed seal

904、1304、1504:捕集位置 904, 1304, 1504: Capture locations

906:龍骨 906: Keel

908:微型發光二極體底表面 908: Micro-LED bottom surface

910:微型發光二極體 910: Micro LED

910a、910b、910c:表面貼裝微型發光二極體 910a, 910b, 910c: Surface mount micro-LEDs

912:微型發光二極體頂表面 912: Micro-LED top surface

914、1316:第一電極 914, 1316: First electrode

916、1324:第二電極 916, 1324: Second electrode

918、1315、1318、1525:顯示基板 918, 1315, 1318, 1525: Display substrate

1000、1000a、1000b、1000c:載體襯底 1000, 1000a, 1000b, 1000c: Carrier substrate

1002:載體襯底頂表面 1002: Carrier bottom and top surfaces

1004:阱 1004: Trap

1006:間距 1006: Spacing

1008:載體襯底底表面 1008: Bottom surface of carrier substrate

1010:加熱裝置 1010: Heating device

1100:垂直微型發光二極體 1100: Vertical Micro-LED

1102:垂直微型發光二極體頂表面 1102: Vertical micro-LED top surface

1104:垂直微型發光二極體第一電極 1104: Vertical micro-LED first electrode

1106:絕緣層 1106: Insulation layer

1200、1400:靜電力產生器 1200, 1400: Static Electricity Generator

1202、1402:磁力產生器 1202, 1402: Magnetic generator

1306:深度 1306: Depth

1308:捕集位置底表面 1308: Bottom surface of the capture location

1310:微型發光二極體厚度 1310: Micro-LED thickness

1312:微型發光二極體底表面 1312: Micro-LED bottom surface

1314:微型發光二極體頂表面 1314: Micro-LED top surface

1320:凹槽 1320: Groove

1322:硫醇生物素雙功能分子/第一組分 1322: Thiol-biotin bifunctional molecule/first component

1325:ACF 1325:ACF

1326:二氧化矽膜 1326: Silicon dioxide film

1327:鏈黴親和素分子/第一組分 1327: Streptavidin molecule/first component

1506:中心部分 1506: Center

1508:第一深度 1508: First Depth

1510:遠端 1510: Remote

1512:第二深度 1512: Second Depth

1514:近端 1514: Proximal

1516:軸向微型發光二極體 1516: Axial Micro-LED

1518:主體 1518: Subject

1520:主體厚度 1520:Main body thickness

1522:遠端電極 1522: Distal Electrode

1524:電極厚度 1524: Electrode thickness

1526:近端電極 1526: Proximal electrode

1528:電極 1528: Electrode

1530:電介質薄膜 1530: Dielectric Film

1532:主體凹槽 1532: Main body groove

1534:P連接墊 1534:P Connector Pad

1536:N連接墊 1536:N connection pad

1538:第一凹槽 1538: First Groove

圖1A-圖1C為基於GaN LED的截面圖(圖1A)、兩個垂直微型發光二極體的截面圖(圖1B)和一個表面貼裝微型發光二極體的截面圖(圖1C)(習知技術)。 Figures 1A-1C are cross-sectional views of a GaN LED (Figure 1A), a cross-sectional view of two vertical micro-LEDs (Figure 1B), and a cross-sectional view of a surface-mount micro-LED (Figure 1C) (known technology).

圖2A為使用雷射剝離技術從藍寶石生長襯底上移除微型發光二極體的過程(習知技術)。 Figure 2A shows the process of removing micro-LEDs from a sapphire growth substrate using laser ablation technology (known technology).

圖2B為將器件從載體晶圓上移動並定位到顯示基板上的拾放過程(習知技術)。 Figure 2B illustrates the pick-and-place process for moving devices from a carrier wafer and positioning them on a display substrate (known technique).

圖2C為將微型發光二極體的陽極與基板電極連接的過程(習知技術)。 Figure 2C shows the process of connecting the anode of a micro-LED to the substrate electrode (known technology).

圖3A-圖3H為一種示例性的巨量轉移過程的步驟(習知技術)。 Figures 3A-3H illustrate the steps of an exemplary mass transfer process (known in the art).

圖4A-圖4B為在一100mm晶圓上使用14mm壓印印章進行壓印拾取的覆蓋區域示例(圖4A),此時晶圓上留有20%的微型發光二極體,並且有三個壓印印章上的微型發光二極體帶有缺陷(圖4B)(習知技術)。 Figures 4A and 4B show an example of the coverage area of a 100mm wafer using a 14mm stamp for pick-and-place (Figure 4A). At this point, 20% of the LEDs remain on the wafer, and three of the LEDs on the stamp have defects (Figure 4B). (Known technology)

圖5為展示表面貼裝微型發光二極體和控制微型發光二極體亮度的功率電晶體的典型背板佈置的部分截面圖。 Figure 5 is a partial cross-sectional view of a typical backplane layout showing surface-mounted microLEDs and the power transistors that control the brightness of the microLEDs.

圖6A-圖6B分別為用於流體組裝的表面貼裝微型發光二極體的俯視圖和截面圖。 Figures 6A and 6B are top views and cross-sectional views, respectively, of a surface-mount microLED for fluid assembly.

圖7為選擇性拾取後微型發光二極體晶圓的示意圖。 Figure 7 is a schematic diagram of a micro-LED wafer after selective picking.

圖8為流體效應的簡短描述,可以使100%的微型發光二極體以電極向下的正確方向組裝。 Figure 8 provides a brief description of the fluid effect, which allows 100% of the micro-LEDs to be assembled in the correct orientation with the electrodes facing downward.

圖9A-圖9D為使用微型發光二極體巨量轉移壓印系統的步驟。 Figures 9A-9D illustrate the steps of using a micro-LED mass transfer imprinting system.

圖10A-圖10D為將微型發光二極體從一載體襯底轉移至顯示基板的過程的截面圖。 Figures 10A-10D are cross-sectional views of the process of transferring a micro-LED from a carrier substrate to a display substrate.

圖11A-圖11D為壓印系統的示意圖,其中微型發光二極體為垂直微型發光二極體。 Figures 11A-11D are schematic diagrams of an imprinting system, wherein the micro-LEDs are vertical micro-LEDs.

圖12A-圖12B為用於輔助將微型發光二極體固定到載體襯底的捕集位置的吸引力產生器的部分截面圖。 Figures 12A-12B are partial cross-sectional views of an attractive force generator used to assist in securing a micro-luminescent diode to a capture position on a carrier substrate.

圖13A-圖13K為使用流體組裝壓印印章基板的微型發光二極體巨量轉移壓印系統的步驟示意圖。 Figures 13A-13K are schematic diagrams illustrating the steps of a micro-LED mass transfer imprinting system using a fluid assembly imprinting stamp substrate.

圖14A和圖14B分別為使用靜電力產生器和使用磁力產生器作為輔助裝置,協助微型發光二極體固定到流體組裝捕集位置的示意圖。 Figures 14A and 14B are schematic diagrams of using an electrostatic force generator and a magnetic force generator as auxiliary devices, respectively, to assist in securing the micro-LED to the fluid assembly capture position.

圖15A-圖15I為使用流體壓印以及軸向微型發光二極體的微型發光二極體巨量轉移系統的示意圖。 Figures 15A-15I are schematic diagrams of a micro-LED mass transfer system using fluid imprinting and axial micro-LEDs.

圖16為與圖9A-圖9D所示系統對應的微型發光二極體巨量轉移法的流程圖。 Figure 16 is a flow chart of the micro-LED mass transfer method corresponding to the system shown in Figures 9A-9D.

圖17為圖13A-圖13K所示的使用流體組裝壓印印章基板的微型發光二極體巨量轉移法的流程圖。 Figure 17 is a flow chart of the method for mass transfer of micro-LEDs using a fluid assembly stamp substrate as shown in Figures 13A-13K.

圖18為圖15A-圖15I所示的軸向(引線)微型發光二極體巨量轉移法的流程圖。 Figure 18 is a flow chart of the axial (lead) micro-LED mass transfer method shown in Figures 15A-15I.

圖19為微型發光二極體傳輸時間距拓展方法的流程圖。 Figure 19 is a flow chart of the method for extending the transmission time span of a micro-LED.

美國專利9,825,202和10,418,527已經報告了使用無機LED和顯示背板上的流體組裝來製作微型發光二極體顯示器的一般過程,這些專利藉由引用結合在此。特別地,美國9,825,202從13列26行開始描述了製造合適的顯示屏背板的工藝流程,如圖17所示。其電氣要求在未公開的專利申請16/727,186中進行了描述,該專利也包含在本文中以供參考。此處使用的顯示基板具有與專利9,825,202中圖14B和圖14C描述的相同的行和列排列以及薄膜電晶體(TFT)電路,但沒有阱層,因為巨量轉移壓印印章設置了微型發光二極體的位置。 U.S. Patents 9,825,202 and 10,418,527, which are incorporated herein by reference, have reported general processes for fabricating micro-LED displays using inorganic LEDs and fluidic assembly on display backplanes. Specifically, U.S. Patent 9,825,202 describes a process flow for fabricating a suitable display backplane, starting at column 13 and row 26, as shown in Figure 17 . Its electrical requirements are described in unpublished patent application 16/727,186, which is also incorporated herein by reference. The display substrate used here has the same row and column arrangement and thin-film transistor (TFT) circuitry as described in Figures 14B and 14C of Patent 9,825,202, but without a well layer, as a mass transfer stamp sets the position of the micro-LEDs.

圖5為展示表面貼裝微型發光二極體和控制微型發光二極體亮度的功率電晶體的典型背板佈置的部分截面圖。 Figure 5 is a partial cross-sectional view of a typical backplane layout showing surface-mounted microLEDs and the power transistors that control the brightness of the microLEDs.

美國專利9,825,202、10,418,527和10,543,486(在此引用)所提出的流體組裝技術適用於直接隨機組裝的低成本的微型發光二極體顯示器製造。這裡使用了相同的組裝技術來製備一個壓印印章,用於輪流將微型發光二極體綁定到顯示基板的電極上。與直接的流體組裝策略相比,這種方法的優點是,藉由在綁定過程中使用壓印印章並施加壓力,有助於微型發光二極體與顯示器之間形成歐姆接觸。如本文所使用的,轉移壓印印章被設置為具有陣列分佈的 捕集位置,使捕集位置之間的間距與顯示器畫素之間的間距匹配。所述壓印印章可以由玻璃、石英或者單晶矽製成,以及捕集位置(也被稱為阱)可以藉由蝕刻壓印印章或在壓印印章上設置一層膜,例如圖案化的聚醯亞胺,並使用光刻技術圖案化出阱來製成。捕集位置與微型發光二極體具有相同的形狀,並可能比美國專利10,804,426圖8所示的稍大一些,該專利藉由引用結合在此。本文所述系統的獨特之處在於,捕集位置的深度可能小於微型發光二極體厚度的至少一個點,因此微型發光二極體可以在不受到壓印印章頂表面的干擾的情況下接觸組裝工具或顯示基板。蝕刻在壓印印章上的阱(捕集位置)可以更穩固,從而可以更加徹底的清洗,但對捕集位置深度的控制會變得更困難。相反,形成在聚醯亞胺或一沉積膜上的捕集位置的深度可以藉由膜的厚度進行控制,但是更容易受損。 The fluidic assembly techniques proposed in U.S. Patents 9,825,202, 10,418,527, and 10,543,486 (cited herein) are suitable for direct random assembly of low-cost micro-LED displays. Here, the same assembly techniques are used to create an embossing stamp, which is used to alternately bond micro-LEDs to electrodes on a display substrate. This approach has the advantage over direct fluidic assembly strategies in that the application of pressure by the embossing stamp during the bonding process facilitates the formation of ohmic contact between the micro-LEDs and the display. As used herein, the transfer embossing stamp is configured with an array of trapping sites, with the spacing between the trapping sites matching the spacing between display pixels. The embossing stamp can be made of glass, quartz, or single-crystal silicon, and the trapping sites (also known as wells) can be formed by etching the embossing stamp or by placing a film, such as patterned polyimide, on the embossing stamp and patterning the wells using photolithography. The trapping sites have the same shape as the micro-LEDs and can be slightly larger than shown in FIG8 of U.S. Patent 10,804,426, which is incorporated herein by reference. A unique feature of the system described herein is that the depth of the trapping sites can be less than at least one point of the thickness of the micro-LEDs, so that the micro-LEDs can contact the assembly tool or display substrate without being disturbed by the top surface of the embossing stamp. Wells (trapping sites) etched into an embossing stamp are more stable, allowing for more thorough cleaning, but controlling the depth of the trapping sites becomes more difficult. In contrast, the depth of trapping sites formed on polyimide or a deposited film can be controlled by the film thickness, but the film is more susceptible to damage.

本申請所述的壓印系統兼容多種配置的微型發光二極體,但如圖2C所示的傳統的LED結構並不適用,因為其缺少了一種用於在流體組裝中進行定位的裝置,因此電極不能正確定位到顯示基板上以進行綁定。美國專利10,804,426中描述的圓盤形表面貼裝微型發光二極體被設計為在一定範圍內的解決方案,約束於美國專利9,825,202所描述的流體組裝中,如12列56行和圖16所示,因此這些設備被應用於描述本申請所述的壓印系統。需要明白的是,其他的微型發光二極體形狀,如方形、矩形和三角形的器件,如美國專利9,825,202的圖8以及美國專利10,516,084的圖4(藉由引用結合在此),可以以相同的方式使用。同樣地,所述壓印系統不限於表面貼裝微型發光二極體。垂直微型發光二極體同樣可以使用此方法,採用單個底部電極,並在組裝後加工製作頂部電極。這些變化對於本領域的技術人員來說是顯而易見的,考慮到簡潔性,本申請對此不再進行過多描述。 The imprinting system described in this application is compatible with a variety of micro-LED configurations, but the conventional LED structure shown in FIG2C is not suitable because it lacks a device for positioning in the fluid assembly, and therefore the electrode cannot be properly positioned on the display substrate for bonding. The disc-shaped surface-mount micro-LED described in U.S. Patent 10,804,426 was designed as a solution within a certain range, constrained by the fluid assembly described in U.S. Patent 9,825,202, as shown in 12 columns and 56 rows and FIG16, so these devices are used to describe the imprinting system described in this application. It should be understood that other microLED shapes, such as square, rectangular, and triangular devices, as described in FIG. 8 of U.S. Patent 9,825,202 and FIG. 4 of U.S. Patent 10,516,084 (incorporated herein by reference), can be used in the same manner. Similarly, the embossing system is not limited to surface-mount microLEDs. Vertical microLEDs can also be fabricated using this method, employing a single bottom electrode and fabricating the top electrode after assembly. These variations will be readily apparent to those skilled in the art and, for the sake of brevity, will not be further described in this application.

圖6A和圖6B分別描述了一個用於流體組裝的表面貼裝微型發光二極體的俯視圖和截面圖。該器件的結構通常為直徑20-100微米(μm),厚度為4-6μm,並包括一高度為5-10μm的龍骨。在這種情況下,阱深通常為3.5-4.5μm來適應微型發光二極體的厚度。詳細的製造工藝流程可以參閱美國專利10/804,426的8列56行以及圖6。圓盤的形狀與捕集位置的圓柱形匹配,捕集位置的深度通常小於微型發光二極體的厚度,其直徑略大於微型發光二極體的直 徑。表面貼裝電極通常由錫/銦或金/鍺等焊料製作,P連接墊和N連接墊的綁定表面必須位於同一平面上以便於接觸。 Figures 6A and 6B depict, respectively, a top view and a cross-sectional view of a surface-mount microLED for fluidic assembly. The device structure typically has a diameter of 20-100 micrometers (μm), a thickness of 4-6 μm, and includes a keel with a height of 5-10 μm. In this case, the well depth is typically 3.5-4.5 μm to accommodate the thickness of the microLED. A detailed fabrication process flow can be found in columns 8 and 56 of U.S. patent 10/804,426 and in Figure 6. The shape of the disk matches the cylindrical shape of the trapping site, which is typically less than the thickness of the microLED and slightly larger in diameter. Surface mount electrodes are usually made of solder such as tin/indium or gold/germanium. The bonding surfaces of the P-connection pad and the N-connection pad must be on the same plane for easy contact.

圖7描述了選擇性拾取後的微型發光二極體晶圓。藉由光學顯微鏡,掃描電子顯微鏡(Scanning Electron Microscope,SEM)圖像,陰極發光或光致發光來識別缺陷。其目的是識別出所有可能導致顯示畫素錯誤的缺陷,這樣就可以將帶有缺陷的產品從用於製造的微型發光二極體懸浮液中去除。將缺陷圖與已知的圖案如邊緣珠狀圖和排列結構結合,就可以得到所有已知的帶有缺陷的微型發光二極體的位置。使用印刷工藝,將帶有缺陷的微型發光二極體使用捕獲材料覆蓋,以避免他們被拾取。如圖所示,選擇性的拾取壓印印章過程將獲得所有合格的微型發光二極體並留下帶有缺陷的微型發光二極體。將高利用率與防止缺陷器件混入相結合是流體組裝技術的一個顯著優點。選擇性拾取方法在未公開的申請號為16,875,994的申請文件中有更加詳細的描述,本申請藉由引用結合在此。 Figure 7 depicts a microLED wafer after selective picking. Defects are identified using optical microscopes, scanning electron microscope (SEM) images, cathodoluminescence, or photoluminescence. The goal is to identify all defects that could cause display pixel errors so that defective products can be removed from the microLED suspension used for manufacturing. By combining the defect map with known patterns such as edge beading maps and alignment structures, the locations of all known defective microLEDs can be determined. Using a printing process, defective microLEDs are covered with a capture material to prevent them from being picked up. As shown in the figure, the selective pick-up stamping process captures all qualified microLEDs while leaving behind defective ones. Combining high utilization with the prevention of defective devices is a significant advantage of fluidic assembly technology. The selective pick-up method is described in more detail in unpublished application No. 16,875,994, which is incorporated herein by reference.

在微型發光二極體製作完成後,生長晶圓經由一黏合膠層附著在一載體晶圓上,藉由雷射剝離(LLO)技術將微型發光二極體從藍寶石晶圓上剝離出來,並在微型發光二極體的底表面上圖案化龍骨。 After the micro-LEDs are fabricated, the grown wafer is attached to a carrier wafer via an adhesive layer. Laser lift-off (LLO) technology is used to lift the micro-LEDs off the sapphire wafer, and a keel is patterned on the bottom surface of the micro-LEDs.

將微型發光二極體懸浮液分散在載體襯底上,並按照美國專利10,418,527和美國專利10,804,426的圖7中的描述進行組裝。對於巨量轉移法來說,避免表面污染物干擾微型發光二極體露出的表面以及目標位置的表面是十分重要的。因此,表面上任何未組裝的多餘的微型發光二極體會被移除,並且在組裝後進行回收,因此有效的清洗方法也十分重要。 A suspension of micro-LEDs is dispersed onto a carrier substrate and assembled as described in Figure 7 of U.S. Patent No. 10,418,527 and U.S. Patent No. 10,804,426. For mass transfer, it is crucial to prevent surface contaminants from interfering with the exposed surface of the micro-LEDs and the target surface. Therefore, any excess unassembled micro-LEDs on the surface are removed and recovered after assembly, making effective cleaning methods crucial.

圖8對流體效應進行了一個簡單的概述,該效應使100%的微型發光二極體能夠以電極向下的正確方向進行組裝。組裝好的基板會被檢查,如果一些阱位沒有被填充,或者存在其他缺陷如多餘的未組裝的微型發光二極體,只需用溶劑清洗壓印印章來移除微型發光二極體,並將溶劑捕獲至儲存器中以回收微型發光二極體。空的壓印印章會被進一步清洗、乾燥並檢查,以確保在捕集位置上沒有表面污染或殘留物。這種能力對於使用彈性體或黏合膠來固定微型發光二極體的傳統壓印印章是十分重要的,因為其難以進行清洗和再利用。在傳統技術下,有污染或者缺失微型發光二極體的壓印印章通常會被丟棄,從而導致壓印印章上完好的微型發光二極體無法被回收。 Figure 8 provides a simplified overview of the fluidic effect that enables 100% of the micro-LEDs to be assembled with the correct electrode-down orientation. The assembled substrate is inspected, and if some wells are not filled or other defects such as excess, unassembled micro-LEDs are present, the micro-LEDs are removed by cleaning the stamp with a solvent, and the solvent is captured in a reservoir for micro-LED recovery. The empty stamp is further cleaned, dried, and inspected to ensure that there is no surface contamination or residue at the capture location. This capability is particularly important compared to traditional stamping stamps that use elastomers or adhesives to secure the micro-LEDs, which are difficult to clean and reuse. Under traditional technology, stamps with contaminated or missing LEDs are usually discarded, making it impossible to recycle the intact LEDs on the stamps.

圖9A-圖9D描述了微型發光二極體巨量轉移壓印系統的使用步驟。該系統包括一具有頂表面902的壓印印章基板900。頂表面902上形成有陣列分佈的壓印印章基板捕集位置904。每一捕集位置904被配置為柱狀凹槽,從而臨時固定從一微型發光二極體910的底表面908延伸出的龍骨906。如圖所示,微型發光二極體910為表面貼裝微型發光二極體,每一微型發光二極體910包括一平面的頂表面912,頂表面912上設有第一電極914和第二電極916。在這種情況下,龍骨906不導電。在這個特殊的例子中,如圖6A所示,第二電極為圍繞第一電極的一個整環或部分環。對於圖9A-圖9D或圖11A-圖11D(見下文)的系統,可以使用黏合膠或彈性體在壓印印章基板頂表面902上進行圖案化,來促使微型發光二極體附著到一捕集位置上。 9A-9D illustrate the steps of using a micro-LED mass transfer imprinting system. The system includes an imprinting stamp substrate 900 having a top surface 902. An array of imprinting stamp substrate capture locations 904 is formed on the top surface 902. Each capture location 904 is configured as a columnar groove to temporarily secure a keel 906 extending from a bottom surface 908 of a micro-LED 910. As shown, the micro-LEDs 910 are surface mount micro-LEDs, each of which includes a planar top surface 912 having a first electrode 914 and a second electrode 916 disposed thereon. In this case, the keel 906 is non-conductive. In this particular example, as shown in FIG6A , the second electrode is a full or partial ring surrounding the first electrode. For the systems of FIG9A-9D or FIG11A-11D (see below), an adhesive or elastomer can be patterned on the top surface 902 of the stamp substrate to facilitate attachment of the microLEDs to a trapping location.

填充好的載體襯底1000是使用壓印印章基板900向顯示基板918進行巨量轉移的基礎,圖中以單個微型發光二極體進行說明。儘管圖中沒有明確展示,但顯示基板的電極連接墊連接到一個由行列線構成的網絡從而使微型發光二極體工作是顯而易見的,具體細節請參考美國專利9,825,202。在這種情況下,載體襯底1000為帶有阱的平面的表面基板,可以使壓印印章頭捕集位置904附近的局部凸起(可選為黏合膠或彈性體)接觸到每一微型發光二極體(如圖9B所示)。由於微型發光二極體通常僅靠重力固定在載體中,相對較弱的附著力會使微型發光二極體在轉移過程中藉由可選的黏合膠或彈性體從載體中移除。壓印印章與顯示基板上的電極對齊,並進行壓合,使微型發光二極體的電極與顯示基板上的電極之間形成硬接觸,同時藉由加熱形成焊料綁定(圖9C)。在另一實施例中,連接可以由一額外的ACF膜進行(圖未示)。當綁定完成時,轉移壓印印章會被回收並與微型發光二極體脫離(圖9D)。轉移頭900和載體襯底1000會被清洗以重複使用,並循環操作從而填充顯示基板918的全部區域。 The filled carrier substrate 1000 is the basis for mass transfer using the embossing stamp substrate 900 to the display substrate 918, illustrated in the figure with a single micro-LED. Although not explicitly shown in the figure, it is obvious that the electrode connection pads of the display substrate are connected to a network of row and column lines to operate the micro-LEDs. For details, please refer to U.S. Patent 9,825,202. In this case, the carrier substrate 1000 is a flat surface substrate with wells that allow local protrusions (optionally adhesive or elastomer) near the embossing stamp head capture location 904 to contact each micro-LED (as shown in Figure 9B). Since the micro-LED is typically held in place in the carrier solely by gravity, the relatively weak adhesion forces allow the micro-LED to be removed from the carrier during the transfer process using an optional adhesive or elastomer. The embossing stamp is aligned with the electrodes on the display substrate and pressed to create a hard contact between the electrodes of the micro-LED and the electrodes on the display substrate, while heat is applied to form a solder bond (Figure 9C). In another embodiment, the connection can be made with an additional ACF film (not shown). When the bond is complete, the transfer embossing stamp is recovered and released from the micro-LED (Figure 9D). The transfer head 900 and carrier substrate 1000 are cleaned and reused, and the cycle is repeated to fill the entire area of the display substrate 918.

圖10A-圖10D為描述微型發光二極體從載體襯底轉移到顯示基板的過程的截面圖。該系統包括流體組裝載體襯底1000a-1000c,其具有一平面的頂表面1002以及陣列排布在載體襯底頂表面1002的阱1004,相鄰阱之間具有間距1006,間距1006與分隔開壓印印章基板上相鄰捕集位置的間距相匹配。載體襯底的阱1004具有第一周邊形狀(在本實施例中為圓形)以及平面的阱底面1008。表面貼裝微型發光二極體910a-910c均具有第一周邊形狀以及平面的頂表 面912,從而藉由第一電極914和第二電極916與阱底面1008接觸(如圖9A所示)。 Figures 10A-10D are cross-sectional views illustrating the process of transferring microluminescent diodes from a carrier substrate to a display substrate. The system includes a fluidic assembly carrier substrate 1000a-1000c having a planar top surface 1002 and an array of wells 1004 arranged on the carrier substrate top surface 1002. Adjacent wells are spaced 1006 apart, and the spacing 1006 matches the spacing separating adjacent capture locations on the imprinting stamp substrate. The wells 1004 of the carrier substrate have a first peripheral shape (circular in this embodiment) and a planar well bottom surface 1008. Surface-mount microLEDs 910a-910c each have a first peripheral shape and a planar top surface 912, thereby contacting the well bottom surface 1008 via a first electrode 914 and a second electrode 916 (as shown in FIG. 9A ).

在RGB顯示的情況下,壓印系統可以進一步包括第一流體組裝載體襯底1000a,以及設於載體襯底頂表面的陣列分佈的阱,相鄰阱之間具有間距1006從而與壓印印章基板的捕集位置相匹配(圖10B)。微型發光二極體910a被配置為發出第一波長的光,每個微型發光二極體在第一載體襯底1000a中佔據相應的阱。同樣的,第二流體組裝載體襯底1000b包括設於載體襯底頂表面的陣列分佈的阱,相鄰阱之間具有間距1006從而與壓印印章基板的捕集位置相匹配。微型發光二極體910b被配置為發出第二波長的光,每一微型發光二極體在第二載體襯底1000b中佔據相應的阱。第三流體組裝載體襯底1000c包括設於載體襯底頂表面的陣列分佈的阱,相鄰阱之間具有間距1006從而與壓印印章基板的捕集位置相匹配。微型發光二極體910c被配置為發出第三波長的光,每一微型發光二極體在第三載體襯底1000c中佔據相應的阱。 In the case of RGB display, the imprint system can further include a first fluid assembly carrier substrate 1000a and an array of wells disposed on the top surface of the carrier substrate, with adjacent wells spaced 1006 apart to match the capture locations of the imprinting stamp substrate (Figure 10B). The micro-LEDs 910a are configured to emit light of a first wavelength, with each micro-LED occupying a corresponding well in the first carrier substrate 1000a. Similarly, the second fluid assembly carrier substrate 1000b includes an array of wells disposed on the top surface of the carrier substrate, with adjacent wells spaced 1006 apart to match the capture locations of the imprinting stamp substrate. Micro-LEDs 910b are configured to emit light at a second wavelength, with each micro-LED occupying a corresponding well in the second carrier substrate 1000b. The third fluid assembly carrier substrate 1000c includes wells arranged in an array on the top surface of the carrier substrate, with adjacent wells spaced 1006 apart to match the capture locations of the imprint stamp substrate. Micro-LEDs 910c are configured to emit light at a third wavelength, with each micro-LED occupying a corresponding well in the third carrier substrate 1000c.

為了製造RGB顯示器所需的三種顏色,三種顏色的微型發光二極體需要依次進行組裝和壓印操作,如圖10A-圖10D所示。三種載體襯底上捕集位置陣列的設計會根據顯示器畫素的間距1006進行間隔。不同顏色的微型發光二極體的工藝流程或LED的性能差距有較大的可能決定了不同顏色的微型發光二極體具有不同尺寸和/或形狀。舉例來說,紅色的微型發光二極體可以由鋁銦鎵磷(AlInGaP)製成,如美國專利10,804,426中所述,在這種情況下,紅色的微型發光二極體可能比以GaN為基底的藍色和綠色器件更厚。由於藍色和綠色的微型發光二極體具有不同的量子效率,而人類視覺系統對綠色的敏感度更高,因此可能需要製造具有不同發射區域的藍色和綠色微型發光二極體。這些差異的示例如圖10A所示,每個載體襯底被調整以用來滿足相應顏色的微型發光二極體的需求。壓印印章基板900a從載體襯底上捕捉了陣列排布的藍色微型發光二極體910a,並移動到顯示基板918上,使壓印印章900a與顯示基板上的空置區域對齊並將微型發光二極體的電極與顯示基板上相匹配的電極進行物理接觸(圖10B)。壓力與加熱裝置1010被用於加強電極之間的緊密接觸,從而使金屬材料熔化並形成焊料綁定。在圖10C和圖10D中,綠色微型發光二極體910b和紅色微型發光二極體910c以相同的方式被轉移和綁定(壓印印章900b、壓印印章900c)。微型發光二極體與連接墊之間的綁定可能會使用諸如金/鍺對應到 銅、銦/鋅對應到銅以及金/ACF/銅等材料。如果使用了ACF,則顯示電極的材料可以有更廣泛的選擇,如Mo/Al/Mo。 In order to manufacture the three colors required for an RGB display, micro-LEDs of the three colors need to be assembled and embossed sequentially, as shown in Figures 10A-10D. The design of the array of capture sites on the three carrier substrates is spaced according to the pitch 1006 of the display pixels. The process flow of micro-LEDs of different colors or the performance gap of LEDs are likely to determine that the micro-LEDs of different colors have different sizes and/or shapes. For example, the red micro-LED can be made of aluminum indium gallium phosphide (AlInGaP), as described in U.S. Patent 10,804,426. In this case, the red micro-LED may be thicker than the blue and green devices based on GaN. Because blue and green microLEDs have different quantum efficiencies, and the human visual system is more sensitive to green, it may be necessary to manufacture blue and green microLEDs with different emission areas. An example of these differences is shown in FIG10A , where each carrier substrate is tuned to accommodate the needs of the corresponding color of microLED. The embossing stamp substrate 900a captures the array of blue microLEDs 910a from the carrier substrate and moves it to the display substrate 918, aligning the embossing stamp 900a with the vacant area on the display substrate and physically contacting the electrodes of the microLEDs with the matching electrodes on the display substrate ( FIG10B ). Pressure and heating device 1010 is used to strengthen the contact between the electrodes, melting the metal material and forming a solder bond. In Figures 10C and 10D, green micro-LED 910b and red micro-LED 910c are transferred and bonded in the same manner (stamping stamp 900b, stamping stamp 900c). Bonding between the micro-LED and the connection pad can use materials such as gold/germanium to copper, indium/zinc to copper, and gold/ACF/copper. If ACF is used, a wider selection of display electrode materials is available, such as Mo/Al/Mo.

本申請使用的流體組裝在習知技術的簡單壓印進程上實現了幾點改進:1)陣列圖案中沒有因為缺陷或缺少微型發光二極體而產生的縫隙;2)選擇性拾取和流體組裝充分利用了一個晶圓上所有完好的微型發光二極體;3)將組裝過程中和有缺陷的載體襯底上回收微型發光二極體可以防止浪費;4)載體襯底是根據顯示器上捕集位置間的距離製造的,可以簡單的完成間距的擴展。 The fluid assembly used in this application achieves several improvements over the conventional simple imprint process: 1) There are no gaps in the array pattern due to defects or missing micro-LEDs; 2) Selective pick-up and fluid assembly fully utilize all intact micro-LEDs on a wafer; 3) Micro-LEDs are recovered during the assembly process and on defective carrier substrates to prevent waste; 4) The carrier substrate is manufactured based on the distance between capture locations on the display, allowing for simple pitch expansion.

圖11A-圖11D描述了一個壓印系統,其中的微型發光二極體為垂直微型發光二極體,每一垂直微型發光二極體1100具有設有第一電極1104的平面的頂表面1102,以及具有作為第二電極的導電的龍骨906。與表面貼裝型微型發光二極體相同,載體襯底的阱1004具有第一周邊形狀(如圓形)以及一個平面的阱底面1008。每一垂直微型發光二極體1100均具有第一周邊形狀以及平面的頂表面1102,頂表面1102經由第一電極1104與對應的阱底面1008接觸。 Figures 11A-11D illustrate an imprinting system in which the micro-LEDs are vertical micro-LEDs. Each vertical micro-LED 1100 has a planar top surface 1102 with a first electrode 1104 and a conductive keel 906 serving as a second electrode. Similar to surface-mount micro-LEDs, the well 1004 on the substrate has a first peripheral shape (e.g., circular) and a planar well bottom surface 1008. Each vertical micro-LED 1100 has a first peripheral shape and a planar top surface 1102, which contacts the corresponding well bottom surface 1008 via the first electrode 1104.

對於較小的微型發光二極體來說,不能像表面貼裝微型發光二極體一樣有足夠的空間在同一表面上製作兩個電極,相同的組裝過程也可以應用在垂直微型發光二極體上。在這種情況下,微型發光二極體被設置為頂表面具有單一的陽電極,底表面的陰電極為導電柱(龍骨)或在底表面上電鍍金或銅。所述導電柱還可以作為在載體板(基板)上進行流體組裝時的龍骨。 For smaller microLEDs, which don't have the space to fabricate two electrodes on the same surface as surface-mount microLEDs, the same assembly process can be applied to vertical microLEDs. In this case, the microLED is configured with a single anode electrode on the top surface and a cathode electrode on the bottom surface, either as a conductive post (keel) or electroplated with gold or copper. The conductive post also serves as the keel for fluidic assembly on a carrier board (substrate).

展示了導電龍骨垂直微型發光二極體的組裝和綁定順序。藉由上述的選擇性獲取方法製備微型發光二極體懸浮液,並將其分配到設有具有顯示間距的阱的載體襯底表面上,然後按常規流程進行組裝。壓印印章與載體襯底對齊,並使微型發光二極體從載體襯底上移除,如圖11A所示。填充的壓印印章與顯示基板對齊,並藉由施加壓力使得微型發光二極體上的陰極電極與顯示基板上的P連接墊電極之間形成機械接觸(如圖11B所示)。使用加熱裝置1010來形成焊料綁定,然後取出壓印印章並進行清洗和再利用。絕緣層1106,如聚醯亞胺,用於填充微型發光二極體與反射阱之間的空隙,以防止短路並使表面 平面化以實現金屬沉積(圖11C)。龍骨從絕緣層1106中突出,形成連接到每一微型發光二極體上的自對準接觸點,藉由短O2等離子蝕刻來去除一部分絕緣層可以提高接觸的效果。藉由如圖11D所示的圖案化金屬將微型發光二極體的導電柱連接至Vss(電源)從而形成電路。 The assembly and bonding sequence of conductive keel vertical micro-LEDs is demonstrated. A micro-LED suspension is prepared by the selective capture method described above and dispensed onto the surface of a carrier substrate provided with wells having a display spacing, followed by assembly according to conventional procedures. The embossing stamp is aligned with the carrier substrate, and the micro-LED is removed from the carrier substrate, as shown in FIG11A . The filled embossing stamp is aligned with the display substrate, and pressure is applied to establish mechanical contact between the cathode electrode on the micro-LED and the P-connection pad electrode on the display substrate (as shown in FIG11B ). A heating device 1010 is used to form the solder bond, after which the stamp is removed, cleaned, and reused. An insulating layer 1106, such as polyimide, is used to fill the gap between the microLED and the reflective well to prevent shorting and planarize the surface for metal deposition (Figure 11C). A keel protrudes from the insulating layer 1106, forming a self-aligned contact to each microLED. Removing a portion of the insulating layer with a short O2 plasma etch improves contact quality. The conductive posts of the microLEDs are connected to Vss (power) via patterned metal as shown in Figure 11D, completing the circuit.

圖12A和圖12B為用於輔助將微型發光二極體固定到載體襯底的捕集位置的力產生器的部分截面圖。其中圖12A為使用靜電力產生器1200,圖12B為使用磁力產生器1202。儘管圖示為表面貼裝微型發光二極體,但上述力產生器也可以應用於垂直微型發光二極體。 Figures 12A and 12B are partial cross-sectional views of a force generator used to assist in securing a microLED to a capture location on a carrier substrate. Figure 12A illustrates the use of an electrostatic force generator 1200, while Figure 12B illustrates the use of a magnetic force generator 1202. Although shown for surface-mount microLEDs, these force generators can also be applied to vertical microLEDs.

圖13A-圖13K描述了使用流體組裝壓印印章基板的微型發光二極體巨量轉移壓印系統的步驟。為了進一步簡化組裝過程,可以使用流體組裝直接填充壓印印章,從而省略載體襯底。圖6所示的微型發光二極體在底表面使用了龍骨結構,下面稱為固定機構,從而使微型發光二極體與流體組裝捕集位置的電極進行固定。對於直接組裝工藝,電極位置必須在壓印印章中“向上”,因此龍骨結構是在微型發光二極體的頂表面製造的,如圖13A所示。以常規的方式進行流體組裝,將微型發光二極體以陣列排布組裝在捕集位置中,並使龍骨結構與電極均向上。用於製造龍骨結構的材料通常為可感光的聚醯亞胺,可以使用溶劑去除或使用氧等離子進行蝕刻。在組裝並乾燥後,將龍骨移除(如圖13B所示),以便於將電極黏合到顯示基板上。壓印印章的製作方法與前述實施例相同,但阱結構必須不能受到去除龍骨的影響,因此不能使用有機薄膜,一種優選的方案為直接在基板上進行蝕刻以形成捕集位置結構。在重力和範德華力的作用下,壓印印章可以容納微型發光二極體,如果將壓印印章倒置,微型發光二極體就會從壓印印章中掉出來。因此在加熱時需要將壓印印章的表面朝上進行轉移組裝和綁定,並將顯示基板下壓在壓印印章上(圖13C)。 Figures 13A-13K illustrate the steps of a micro-LED mass transfer imprint system using a fluid assembly imprint stamp substrate. To further simplify the assembly process, the imprint stamp can be directly filled using fluid assembly, thereby omitting the carrier substrate. The micro-LED shown in Figure 6 utilizes a keel structure on the bottom surface, hereinafter referred to as a fixing mechanism, to secure the micro-LED to the electrode at the fluid assembly capture location. For the direct assembly process, the electrode location must be "upward" in the imprint stamp, so the keel structure is fabricated on the top surface of the micro-LED, as shown in Figure 13A. The fluid assembly is performed in a conventional manner, and the micro-LEDs are arranged in an array in the trapping position with the keel structure and the electrode facing upward. The material used to make the keel structure is usually a photosensitive polyimide, which can be removed using a solvent or etched using an oxygen plasma. After assembly and drying, the keel is removed (as shown in Figure 13B) to facilitate bonding the electrode to the display substrate. The method for making the imprint stamp is the same as the above embodiment, but the well structure must not be affected by the removal of the keel, so organic thin films cannot be used. A preferred solution is to etch directly on the substrate to form the trapping position structure. Gravity and van der Waals forces allow the stamp to hold the microLEDs. If the stamp is inverted, the microLEDs will fall out. Therefore, during heating, the stamp must be placed with the surface facing upward for transfer assembly and bonding, and the display substrate must be pressed down onto the stamp (Figure 13C).

流體組裝壓印印章基板1300具有平面的頂表面1302。在壓印印章基板頂表面1302上形成有陣列設置的捕集位置1304,每一捕集位置具有第一周邊形狀、一深度1306、以及一平面的捕集位置底表面1308。如前述實施例,第一周邊形狀為圓形,但該系統不局限於此形狀。微型發光二極體910設於捕集位置1304中,具有第一周邊形狀、大於捕集位置深度1306的厚度1310、與底表面1308接觸的平面的底表面1312、一具有第一電極1316並延伸出捕集位置的平面的頂表面1314、以及一保護機構(參下述解釋)。所述微型發光二極體 具有與垂直微型發光二極體1100相同的電連接關係,垂直微型發光二極體1100具有形成於底表面1312的第二電極(如圖13D所示)或與一表面貼裝微型發光二極體910相同的電連接關係,表面貼裝微型發光二極體910具有形成在表面1314上的第一電極1316和第二電極1324(參圖13A和圖13E)。 The fluid assembly stamp substrate 1300 has a planar top surface 1302. An array of capture locations 1304 is formed on the stamp substrate top surface 1302, each capture location having a first peripheral shape, a depth 1306, and a planar capture location bottom surface 1308. As in the aforementioned embodiment, the first peripheral shape is circular, but the system is not limited to this shape. A micro-light emitting diode 910 is disposed in the capture location 1304, having a first peripheral shape, a thickness 1310 greater than the capture location depth 1306, a planar bottom surface 1312 in contact with the bottom surface 1308, a planar top surface 1314 having a first electrode 1316 and extending beyond the capture location, and a protective mechanism (see explanation below). The microLED has the same electrical connections as vertical microLED 1100, which has a second electrode formed on bottom surface 1312 (as shown in FIG. 13D ), or as surface-mount microLED 910, which has a first electrode 1316 and a second electrode 1324 formed on surface 1314 (see FIG. 13A and FIG. 13E ).

如圖13A所示,固定機構為形成在微型發光二極體頂表面的龍骨906,龍骨906是臨時的不導電的龍骨,龍骨906在微型發光二極體與顯示基板1315接觸之前會被移除。或者,如圖13D和圖13E所示,固定機構可以是連接到第一電極1316的導電的龍骨906,在圖13D中,微型發光二極體為垂直的微型發光二極體1100。 As shown in FIG13A , the fixing mechanism is a keel 906 formed on the top surface of the micro-LED. Keel 906 is a temporary, non-conductive keel that is removed before the micro-LED contacts the display substrate 1315. Alternatively, as shown in FIG13D and FIG13E , the fixing mechanism can be a conductive keel 906 connected to the first electrode 1316. In FIG13D , the micro-LED is a vertical micro-LED 1100.

在另一實施例中,在直接壓印轉移過程中使用導電的中心柱替代不導電的龍骨,是該結構既可以作為流體組裝過程中的龍骨,也可以作為陽極電極(圖13E)。在這種情況下,壓印印章為帶有陣列設置的捕集位置的簡單盤子,捕集位置間距與顯示器畫素間距相同。顯示基板1318中,P連接墊電極位於N連接墊電極的下方,為微型發光二極體上形成陽極電極的導電柱留出空間(圖13F)。由於工藝的變化,可能會出現導電柱的高度和P連接墊凹槽的深度存在差異的情況,因此可以藉由設置ACF1325來連接微型發光二極體和顯示器基板,從而補償這些差異。 In another embodiment, a conductive center post is used in place of a non-conductive keel during direct imprint transfer, allowing the structure to serve as both a keel during the fluidic assembly process and as an anode electrode ( FIG13E ). In this case, the imprint stamp is a simple plate with an array of trapping sites spaced the same as the display pixel pitch. In the display substrate 1318, the P-connection pad electrode is located below the N-connection pad electrode, leaving space for the conductive post that forms the anode electrode on the micro-LED ( FIG13F ). Due to process variations, there may be differences in the height of the conductive pillars and the depth of the P-connection pad grooves. Therefore, the ACF1325 can be used to connect the micro-LEDs and the display substrate to compensate for these differences.

因此,圖13E中的微型發光二極體是表面貼裝的微型發光二極體910a,而圖13F中的顯示基板1318包括用於容納導電龍骨906的凹槽1320。 Thus, the micro-LED in FIG13E is a surface-mount micro-LED 910a, and the display substrate 1318 in FIG13F includes a recess 1320 for receiving the conductive keel 906.

另一種在轉移壓印印章中定位和固定微型發光二極體的機構為利用共軛生物分子對(如鏈黴親和素-生物素對)之間的優先連接。如圖13G所示,在經過LLO之後,藉由在器件1312的背面沉積一層薄的二氧化矽膜1326,從而製備出功能化的微型發光二極體。微型發光二極體的表面暴露於氫離子或鹼性化合物中,然後與胺端分子如3-氨丙基三甲氧基矽烷(3-aminepropyl-trimethoxysilane)之間作用從而矽烷化。使用鏈黴親和素溶液清洗表面,使鏈黴親和素分子1327與胺端綁定,從而形成鏈黴親和素功能化的微型發光二極體(如圖13H所示)。在進行組裝之前,可以使用生物素端配體對轉移壓印印章上的捕集位置進行類似的處理,或者阱底面可以為金製成的表面,並暴露於硫醇生物素雙功能分子1322中,如圖13I所示。 Another mechanism for positioning and securing the microLED within the transfer stamp utilizes preferential bonding between conjugated biomolecule pairs (e.g., streptavidin-biotin pairs). As shown in Figure 13G , after LLO, a functionalized microLED is fabricated by depositing a thin silicon dioxide film 1326 on the backside of device 1312. The surface of the microLED is exposed to hydrogen ions or alkaline compounds, which then react with amine-terminated molecules such as 3-aminopropyltrimethoxysilane, resulting in silanization. The surface is washed with a streptavidin solution, allowing the streptavidin molecules 1327 to bind to the amine ends, thereby forming a streptavidin-functionalized microLED (as shown in Figure 13H). Prior to assembly, the trapping sites on the transfer stamp can be similarly treated with biotin-terminated ligands, or the bottom surface of the well can be a gold surface exposed to thiol-biotin bifunctional molecules 1322, as shown in Figure 13I.

因此,圖13G-圖13K描述了使用共軛生物分子對作為“固定機構”的微型發光二極體。其中,壓印印章基板底表面1308上塗有包含共軛生物分子對的第一組分1322。微型發光二極體固定機構為塗布在每一微型發光二極體底表面1312的包括共軛生物分子對的第二組分1327。在組裝過程中,相對低的捕集位置深度(約為1μm)可以藉由流體擾動較為容易的移除定向錯誤的微型發光二極體,而定向正確的微型發光二極體可以藉由化學方式綁定在捕集位置底表面,並藉由約束在捕集位置中較好的標記。在圖13J中,生物共軛鍵以極其放大的Z刻度(z scale)進行顯示來說明綁定效果。實際上,綁定層非常薄,在圖13K中的展示更為準確。替代示例的生物素-鏈親和素系統的化學配對,如硫醇-馬來醯亞胺和疊氮化物-炔,可能在穩定性和易於加工方面根據優勢,但製備順序是類似的。 Thus, Figures 13G-13K illustrate microLEDs using conjugated biomolecule pairs as "anchoring mechanisms." A first component 1322 comprising the conjugated biomolecule pairs is coated on the bottom surface 1308 of the stamp substrate. The microLED anchoring mechanism is a second component 1327 comprising the conjugated biomolecule pairs coated on the bottom surface 1312 of each microLED. During assembly, the relatively low trapping site depth (approximately 1 μm) allows for easier removal of misoriented microLEDs by fluid agitation, while correctly oriented microLEDs can be chemically bound to the trapping site bottom surface and better marked by being confined within the trapping site. In Figure 13J , the bioconjugate bond is shown with a greatly magnified z-scale to illustrate the binding effect. In reality, the binding layer is very thin, as shown more accurately in Figure 13K . Alternative chemistries to the biotin-streptavidin system, such as thiol-maleimide and azide-alkyne, may have advantages in terms of stability and ease of processing, but the preparation sequence is similar.

圖14A和圖14B分別描述了使用靜電力產生器1400和使用磁力產生器1402作為輔助機構,用於協助將微型發光二極體固定在流體組裝捕集位置(有或沒有龍骨)中。在圖14A和圖14B中,主要的固定機構可為重力。另外,在圖14A中,固定機構為共軛的生物分子(圖未示)。在其他實施例中(圖未示),圖14A中的力產生器也可以為磁力產生器,圖14B中的力產生器也可以是靜電力產生器。儘管圖14A和圖14B僅展示了流體組裝壓印印章基板,但應當理解,力產生器也可以用於圖9B-圖9D和圖11A-圖11B中的凹槽配置的壓印印章基板。 Figures 14A and 14B illustrate the use of an electrostatic force generator 1400 and a magnetic force generator 1402, respectively, as auxiliary mechanisms for securing a microLED within a fluid assembly capture location (with or without a keel). In Figures 14A and 14B , the primary securing mechanism may be gravity. Alternatively, in Figure 14A , the securing mechanism may be a cohesive biomolecule (not shown). In other embodiments (not shown), the force generator in Figure 14A may also be a magnetic force generator, and the force generator in Figure 14B may also be an electrostatic force generator. Although Figures 14A and 14B illustrate only a fluid assembly embossing stamp substrate, it should be understood that the force generator can also be used with the groove configuration embossing stamp substrates shown in Figures 9B-9D and 11A-11B.

作為增加複雜性的代價,可以在壓印印章結構中增加一些固定結構,用於防止在壓印印章倒置時微型發光二極體從捕集位置上脫離。由於固定機構可以在綁定後從微型發光二極體上移除,因此使用黏合劑進行綁定的方式不具吸引力。藉由在基板承載表面和捕集位置形成層之間設置多孔層,從而將真空條件引入到壓印系統中,但流體組裝的液體可能會流入多孔層中,導致無法進行乾燥工作。壓印印章中最實用的用於固定微型發光二極體的結構即為磁力或靜電力結構。對於靜電力固定,微型發光二極體具有沉積在與表面貼裝電極相對應的表面上(即底表面)的介質膜,壓印印章包括在捕集位置結構下方的動力電極。對於磁力固定,微型發光二極體電極結構可以包含一磁性材料,如鎳,而壓印印章上會有永久性磁鐵或電磁鐵。 At the expense of increased complexity, some fixing structures can be added to the stamp structure to prevent the micro-LED from detaching from the trapping site when the stamp is inverted. Since the fixing structure can be removed from the micro-LED after binding, the use of adhesives for binding is unattractive. By providing a porous layer between the substrate support surface and the trapping site forming layer, vacuum conditions are introduced into the stamping system, but the liquid of the fluid assembly may flow into the porous layer, making it impossible to dry. The most practical structures for fixing the micro-LED in the stamp are magnetic or electrostatic structures. For electrostatic mounting, the microLED has a dielectric film deposited on the surface corresponding to the surface-mount electrode (i.e., the bottom surface), and the embossing stamp includes a dynamic electrode below the trapping location structure. For magnetic mounting, the microLED electrode structure can include a magnetic material such as nickel, while the embossing stamp contains a permanent magnet or electromagnet.

這些固定機構在陣列中的獨立點上是可有開關控制的,因此可以使用如下流程來修復帶有缺陷的壓印印章:1)檢查壓印印章,尋找帶有缺陷的微型發光二極體;2)對所有良好的微型發光二極體開啟固定機構;3)藉由沖洗去除有缺陷的微型發光二極體;4)放置額外的微型發光二極體懸浮液並進行組裝。 These fixtures are switchable at independent points in the array, allowing the following process to repair defective stamps: 1) Inspect the stamp to identify defective microLEDs; 2) Activate the fixture for all good microLEDs; 3) Remove defective microLEDs by rinsing; 4) Place additional microLED suspension and proceed with assembly.

一方面,壓印印章可以包括一光傳感器,當按壓到顯示基板上時,激活所有與壓印印章上的微型發光二極體臨時電連接的捕集位置(同時或按順序)。壓印印章與相關的驅動電路連接到一個系統,該系統用於記錄哪些微型發光二極體是完好的。啟動壓印印章上的固定裝置,使完好的微型發光二極體保持在捕集位置中,並繼續進行組裝,直到全部的微型發光二極體都測試完好,如上述流程2)-4)所示。之後進行綁定流程。 In one aspect, the stamp can include a photosensor that, when pressed against the display substrate, activates all capture locations (simultaneously or sequentially) that are temporarily electrically connected to the micro-LEDs on the stamp. The stamp and associated driver circuitry are connected to a system that records which micro-LEDs are intact. A fixture on the stamp is activated to hold the intact micro-LEDs in the capture locations, and assembly continues until all micro-LEDs have been tested as intact, as described in steps 2)-4) above. The binding process then proceeds.

圖15A-圖15I描述了一個微型發光二極體巨量轉移壓印系統,該系統使用流體壓印印章基板以及軸向微型發光二極體。該混合流體組裝巨量轉移方法也可應用於申請號No.16/846,493所述的軸向微型發光二極體中。為了降低成本並提高密度(density),微型發光二極體被配置為垂直器件,其發光面積為5*8μm,如圖15G所示。葉片形的微型發光二極體電極可以為電鍍銅或金。上述全部特徵的尺寸是可以調整的,但其相對形狀是較為重要的,以便於流體組裝到定向陣列中。 Figures 15A-15I illustrate a microLED mass transfer imprint system using a fluid imprint stamp substrate and axially oriented microLEDs. This hybrid fluid assembly mass transfer method can also be applied to the axially oriented microLEDs described in Application No. 16/846,493. To reduce cost and increase density, the microLEDs are configured as vertical devices with a light-emitting area of 5 by 8 μm, as shown in Figure 15G. The blade-shaped microLED electrodes can be electroplated copper or gold. The dimensions of all these features are adjustable, but their relative shapes are important to facilitate fluid assembly into oriented arrays.

圖15A-圖15C描述了軸向微型發光二極體顯示基板1525的製備過程。電極1528由導電材料(如鉬/銅(Mo/Cu))沉積並圖案化而成,形成用於容納微型發光二極體的陰極和陽極的連接墊。在電極上沉積電介質薄膜1530,其材料可以為二氧化矽、氮化矽(Si3N4)或聚醯亞胺,並在電介質薄膜1530上圖案化並蝕刻出接觸開口,如圖15B所示。使用金屬電極作為硬光罩,蝕刻出用於容納微型發光二極體主體的主體凹槽1532,如圖15B所示。最後藉由電鍍、濺射或蒸發形成N連接墊1536和P連接墊1534,如圖15C所示。 Figures 15A-15C illustrate the fabrication process of an axially oriented micro-LED display substrate 1525. Electrodes 1528 are deposited and patterned from a conductive material (e.g., molybdenum/copper (Mo/Cu)) to form contact pads for accommodating the cathode and anode of the micro-LED. A dielectric film 1530, which can be made of silicon dioxide, silicon nitride (Si3N4), or polyimide, is deposited on the electrodes. The dielectric film 1530 is patterned and etched to create contact openings, as shown in Figure 15B. Using the metal electrode as a hard mask, a body recess 1532 is etched to accommodate the micro-LED body, as shown in Figure 15B. Finally, N-connection pad 1536 and P-connection pad 1534 are formed by electroplating, sputtering, or evaporation, as shown in FIG15C.

對於軸向微型發光二極體的形狀,壓印印章的製作過程會更加複雜,需要兩個不同深度的捕集位置。如圖15D所示,第一凹槽1538被蝕刻在基板上,第一凹槽1538具有一用於容納突出在軸向電極表面下的微型發光二極體主體的深度和輪廓。在圖15E中,藉由蝕刻形成了用於容納軸向電極的第二凹 槽1504。第二凹槽也可以在第一凹槽1538形成後由薄膜材料(如光刻聚醯亞胺)製成。 For the shape of an axial micro-LED, the stamping process is more complex, requiring two trapping locations at different depths. As shown in Figure 15D , a first recess 1538 is etched into the substrate. This recess 1538 has a depth and profile suitable for accommodating the micro-LED body protruding below the surface of the axial electrode. In Figure 15E , a second recess 1504 is formed by etching to accommodate the axial electrode. This second recess can also be formed from a thin film material (such as photolithographic polyimide) after the first recess 1538 is formed.

將已知完好的軸向微型發光二極體懸浮液應用到壓印印章上,並組裝成微型發光二極體陣列(如圖15F所示)。將組裝完成的壓印印章進行檢查,並與顯示基板匹配後按壓到一起,從而將LED的電極與顯示基板上的電極綁定(如圖15I所示)。在綁定完成後,壓印印章會被收回,並進行清洗和檢查,以便於重複使用。 A suspension of known good axial micro-LEDs is applied to an embossing stamp and assembled into a micro-LED array (see Figure 15F). The assembled embossing stamp is inspected, aligned with the display substrate, and pressed together, bonding the LED electrodes to the electrodes on the display substrate (see Figure 15I). After bonding, the embossing stamp is retrieved, cleaned, and inspected for reuse.

因此,該系統包括具有一平面的頂表面1502的流體組裝壓印印章基板1500。形成於壓印印章基板頂表面1502的陣列排布的捕集位置1504包括:第一周邊形狀(大幅矩形),一具有平面的第一深度1508的中心部分1506,一具有平面的第二深度1512的遠端1510,第二深度1512小於第一深度1508,以及一具有平面的第二深度1512的近端1514。 Thus, the system includes a fluid assembly embossing stamp substrate 1500 having a planar top surface 1502. An array of capture locations 1504 formed on the top surface 1502 of the embossing stamp substrate includes a first peripheral shape (largely rectangular), a central portion 1506 having a planar first depth 1508, a distal end 1510 having a planar second depth 1512, the second depth 1512 being less than the first depth 1508, and a proximal end 1514 having a planar second depth 1512.

請一併參閱圖15F和15G,一軸向的微型發光二極體1516,佔據了相應的捕集位置1504,並具有所述第一周邊形狀,主體1518與捕集位置的中心部分1506接觸,一垂直平面部分厚度1520大於捕集位置第一深度1508,但小於兩倍的捕集位置第一深度1508。一遠端電極1522水平平分主體1518,並與捕集位置遠端1510接觸。遠端電極1522具有一個垂直方向的電極厚度1524,其大於捕集位置第二深度1512,但是小於二倍的捕集位置第二深度1512。一近端電極1526水平平分主體1518,並與捕集位置近端1514接觸,近端電極1526具有電極厚度1524。 Referring to Figures 15F and 15G , an axial micro-LED 1516 occupies the corresponding trapping site 1504 and has the first peripheral shape, a body 1518 in contact with the central portion 1506 of the trapping site, and a vertical planar portion thickness 1520 greater than the first trapping site depth 1508 but less than twice the first trapping site depth 1508. A distal electrode 1522 horizontally bisects the body 1518 and in contact with the distal end 1510 of the trapping site. The distal electrode 1522 has a vertical electrode thickness 1524 greater than the second trapping site depth 1512 but less than twice the second trapping site depth 1512. A proximal electrode 1526 horizontally bisects the main body 1518 and contacts the proximal end 1514 of the capture location. The proximal electrode 1526 has an electrode thickness 1524.

如圖15I所示,將微型發光二極體轉移到顯示基板的過程與圖13C所述的過程類似,將對齊的顯示基板下壓到流體組裝壓印印章基板上,使微型發光二極體的電極與相應的顯示基板上的電極接觸。轉移和綁定藉由在施加壓力時對焊料進行加熱來完成。可選地,ACF膜(圖未示)可以在相應的電極之間插入,以實現電連接和機械連接,而不需要金屬相變。 As shown in Figure 15I , the process for transferring the microLEDs to the display substrate is similar to that described in Figure 13C . The aligned display substrates are pressed down onto the fluid assembly stamp substrate, bringing the electrodes of the microLEDs into contact with the corresponding electrodes on the display substrate. Transfer and bonding are accomplished by applying heat to the solder while applying pressure. Optionally, an ACF film (not shown) can be inserted between the corresponding electrodes to achieve both electrical and mechanical connections without requiring a metal phase change.

儘管沒有明確展示,但本實施例的壓印印章基板可以包括如圖14A和圖14B所示的靜電力或磁力產生器。 Although not explicitly shown, the stamp substrate of this embodiment may include an electrostatic or magnetic force generator as shown in Figures 14A and 14B.

圖16是描述與圖9A-圖9D所示的系統相對應的微型發光二極體巨量轉移法的流程圖。儘管為了便於理解,該方法被描述為包括一系列帶有編號的步驟,但編號並不一定指示這些步驟的順序。應當理解,有些步驟可以跳 過,同時進行或可以無需按照嚴格的順序執行。但是,通常可以按照數字順序的步驟執行該方法。該方法從步驟1600開始。 FIG16 is a flow chart describing a micro-LED mass transfer method corresponding to the system shown in FIG9A-9D. Although the method is described as comprising a series of numbered steps for ease of understanding, the numbers do not necessarily indicate the order of these steps. It should be understood that some steps may be skipped, performed simultaneously, or performed in no strict order. However, the method can generally be performed in numerical order. The method begins at step 1600.

步驟1602提供一種壓印印章基板,該基板具有平面的頂表面和形成在所述頂表面的陣列設置的捕集位置,每一捕集位置被設置為柱狀凹槽。一方面,步驟1603a使用黏合材料或彈性體圖案化壓印印章基板的頂表面。在步驟1604中,每個捕集位置凹陷用於容納從微型發光二極體的底表面延伸出的龍骨,並藉由限制每個微型發光二極體的龍骨,在步驟1606中將微型發光二極體固定在壓印印章基板上。步驟1606可以使用額外的靜電力或磁力來將微型發光二極體固定到壓印印章基板上。 In step 1602, an embossing stamp substrate is provided, the substrate having a planar top surface and an array of trapping locations formed on the top surface, each of which is configured as a columnar recess. In one aspect, in step 1603a, the top surface of the embossing stamp substrate is patterned using an adhesive material or an elastomer. In step 1604, each of the trapping locations is recessed to accommodate a keel extending from the bottom surface of a micro-LED. By restraining the keel of each micro-LED, the micro-LED is secured to the embossing stamp substrate in step 1606. Step 1606 may utilize additional electrostatic or magnetic forces to secure the micro-LED to the embossing stamp substrate.

一方面,步驟1604中限制龍骨包括限制具有不導電龍骨的表面貼裝LED,其包括一具有第一電極和第二電極的平面的表面。另一方面,步驟1604限制一導電的龍骨,並連接到第二電極,該垂直LED包括一具有第一電極的平面的表面(即龍骨為第二電極)。 In one aspect, constraining the keel in step 1604 includes constraining a surface-mount LED having a non-conductive keel, which includes a planar surface having a first electrode and a second electrode. In another aspect, in step 1604, constraining a conductive keel connected to the second electrode, the vertical LED includes a planar surface having a first electrode (i.e., the keel serves as the second electrode).

一方面,步驟1602提供一具有間隔捕集位置的壓印印章基板。步驟1601a提供一流體組裝載體襯底,其具有平面的頂表面以及在載體襯底頂表面陣列設置的多個阱,相鄰阱之間的間距與壓印印章基板上捕集位置之間的間距相匹配。在步驟1601b中,藉由流體組裝過程,將微型發光二極體填充進載體襯底的阱中。一方面,步驟1601b可以使用靜電力或磁力將微型發光二極體固定到阱中。步驟1603b將壓印印章基板的頂表面按壓在載體襯底的頂表面上,每一捕集位置與相應的阱接觸,步驟1603c將微型發光二極體從載體襯底巨量轉移到壓印印章基板上。 In one aspect, step 1602 provides an embossing stamp substrate having spaced-apart trapping locations. In step 1601a, a fluid assembly carrier substrate is provided having a planar top surface and a plurality of wells arranged in an array on the carrier substrate top surface, with the spacing between adjacent wells matching the spacing between trapping locations on the embossing stamp substrate. In step 1601b, micro-LEDs are filled into the wells of the carrier substrate via a fluid assembly process. In one aspect, step 1601b can utilize electrostatic or magnetic forces to secure the micro-LEDs to the wells. In step 1603b, the top surface of the embossing stamp substrate is pressed against the top surface of the carrier substrate, so that each capture site contacts a corresponding well. In step 1603c, the micro-LEDs are transferred in bulk from the carrier substrate to the embossing stamp substrate.

具體來說,步驟1601a可提供一載體襯底,其具有包括第一周邊形狀和平面的阱底面的多個阱。之後,在步驟1601b中將微型發光二極體填充到每一阱中,其中填充進阱中的表面貼裝微型發光二極體具有第一周邊形狀,一與所述阱底面接觸的平面的頂表面,其包括第一電極和第二電極。在其他實施例中,步驟1601b填充進阱中的垂直微型發光二極體具有第一周邊形狀,一與所述阱底面接觸的平面的頂表面,其包括一第一電極。 Specifically, step 1601a may include providing a carrier substrate having a plurality of wells having a first peripheral shape and a planar well bottom surface. Subsequently, in step 1601b, each well is filled with a micro-LED. The surface-mount micro-LEDs filled into the wells have a first peripheral shape, a planar top surface in contact with the well bottom surface, and include a first electrode and a second electrode. In other embodiments, the vertical micro-LEDs filled into the wells in step 1601b have a first peripheral shape, a planar top surface in contact with the well bottom surface, and include a first electrode.

在RGB顯示的情況下,步驟1601a中提供的載體襯底包括:第一流體組裝載體襯底,其包括設於載體襯底頂表面的阱陣列,相鄰阱之間的距離與壓印印章基板上相鄰捕集位置的間距匹配; 第二流體組裝載體襯底,其包括設於載體襯底頂表面的阱陣列,相鄰阱之間的距離與壓印印章基板上相鄰捕集位置的間距匹配;第三流體組裝載體襯底,其包括設於載體襯底頂表面的阱陣列,相鄰阱之間的距離與壓印印章基板上相鄰捕集位置的間距匹配。然後,步驟1601b中填充載體襯底的阱的過程包括:使用第一微型發光二極體填充第一載體襯底上的阱,其被配置為發出第一波長的光;使用第二微型發光二極體填充第二載體襯底上的阱,其被配置為發出第二波長的光;以及使用第三微型發光二極體填充第三載體襯底上的阱,其被配置為發出第三波長的光。步驟1603c中將微型發光二極體從載體襯底上轉移到壓印印章基板上包括將微型發光二極體從第一、第二、第三載體襯底上轉移到相應的壓印印章基板上。如圖10A和圖10B所示,對於具有不同形狀的RGB微型發光二極體,採用不同尺寸的載體襯底是必要的。此外,如果RGB微型發光二極體的直徑相等,也可以使用一個載體襯底分別填充不同波長的微型發光二極體,並分別轉移到壓印印章基板上。 In the case of RGB display, the carrier substrate provided in step 1601a includes: a first fluid assembly carrier substrate comprising a well array on the top surface of the carrier substrate, wherein the distance between adjacent wells matches the spacing between adjacent capture locations on the embossed stamp substrate; a second fluid assembly carrier substrate comprising a well array on the top surface of the carrier substrate, wherein the distance between adjacent wells matches the spacing between adjacent capture locations on the embossed stamp substrate; and a third fluid assembly carrier substrate comprising a well array on the top surface of the carrier substrate, wherein the distance between adjacent wells matches the spacing between adjacent capture locations on the embossed stamp substrate. Then, the process of filling the wells of the carrier substrate in step 1601b includes: filling the wells on the first carrier substrate with a first microLED configured to emit light of a first wavelength; filling the wells on the second carrier substrate with a second microLED configured to emit light of a second wavelength; and filling the wells on the third carrier substrate with a third microLED configured to emit light of a third wavelength. Transferring the microLEDs from the carrier substrates to the embossing stamp substrate in step 1603c includes transferring the microLEDs from the first, second, and third carrier substrates to the corresponding embossing stamp substrates. As shown in Figures 10A and 10B, for RGB microLEDs having different shapes, it is necessary to use carrier substrates of different sizes. In addition, if the diameters of the RGB micro-LEDs are equal, a carrier substrate can be used to fill them with micro-LEDs of different wavelengths and then transferred to the stamp substrate separately.

步驟1608提供一具有平面的頂表面以及微型發光二極體連接墊陣列的顯示基板,每一微型發光二極體連接墊至少包括一形成於頂表面的電極,並電連接至一下方的列和行控制線的矩陣。顯示基板上相鄰連接墊之間具有與壓印印章基板上相鄰捕集位置間距匹配的間距,該間距與載體襯底上相鄰阱之間的間距相同。步驟1610中壓印印章基板的頂表面按壓在顯示基板的頂表面上,每一捕集位置與相應的微型發光二極體連接墊接觸。步驟1612中微型發光二極體從壓印印章基板上巨量轉移至顯示基板的微型發光二極體連接墊上。一方面,步驟1612中藉由加熱顯示基板,從而使微型發光二極體綁定到微型發光二極體連接墊上。 In step 1608, a display substrate is provided having a planar top surface and an array of micro-LED connection pads. Each micro-LED connection pad includes at least one electrode formed on the top surface and is electrically connected to an underlying matrix of column and row control lines. The spacing between adjacent connection pads on the display substrate matches the spacing between adjacent trapping sites on the imprinting stamp substrate, which is the same spacing as the spacing between adjacent wells on the carrier substrate. In step 1610, the top surface of the imprinting stamp substrate is pressed against the top surface of the display substrate, with each trapping site contacting a corresponding micro-LED connection pad. In step 1612, the micro-LEDs are transferred in bulk from the stamp substrate to the micro-LED pads on the display substrate. In one aspect, step 1612 heats the display substrate, thereby binding the micro-LEDs to the micro-LED pads.

在RGB顯示的情況下,步驟1608中的顯示基板包括多個用於第一微型發光二極體的連接墊,用於發出第一波長光;多個用於第二微型發光二極體的連接墊,用於發出第二波長光;以及多個用於第三微型發光二極體的連接墊,用於發出第三波長光。之後,步驟1610中將壓印印章基板頂表面按壓到顯示基板頂表面的過程包括分別將填充有第一微型發光二極體、第二微型發光 二極體和第三微型發光二極體的壓印印章基板進行按壓。每種波長的微型發光二極體可以使用一種壓印印章基板,或者如果所有的微型發光二極體的形狀相似時,也可以使用同一基板填充不同波長的微型發光二極體,並將其轉移到顯示基板上。 In the case of an RGB display, the display substrate in step 1608 includes a plurality of connection pads for a first micro-LED for emitting light of a first wavelength; a plurality of connection pads for a second micro-LED for emitting light of a second wavelength; and a plurality of connection pads for a third micro-LED for emitting light of a third wavelength. Subsequently, in step 1610, the top surface of the embossing stamp substrate is pressed against the top surface of the display substrate, including pressing the embossing stamp substrates filled with the first, second, and third micro-LEDs, respectively. One stamp substrate can be used for each wavelength of micro-LEDs, or if all micro-LEDs have similar shapes, the same substrate can be populated with micro-LEDs of different wavelengths and then transferred to the display substrate.

圖17為圖13A-圖13K展示的使用流體組裝壓印印章基板進行微型發光二極體巨量轉移方法的流程圖。該方法從步驟1700開始。步驟1702提供一具有平面的頂表面的流體組裝壓印印章基板,其頂表面上設置的捕集位置具有第一周邊形狀,一深度以及一平面的捕集位置底表面。在流體組裝進程下,步驟1704中填充進捕集位置的微型發光二極體具有:第一周邊形狀,大於捕集位置深度的厚度,與捕集位置底表面接觸的平面的底表面,以及具有第一電極的延伸出捕集位置的平面的頂表面。微型發光二極體還包括一固定機構。步驟1704中可以使用底表面上具有第二電極的微型發光二極體,也可以使用頂表面上具有第一電極和第二電極的表面貼裝微型發光二極體填充進捕集位置中。 FIG17 is a flow chart of a method for mass transfer of micro-LEDs using a fluid assembly stamp substrate as shown in FIG13A-FIG13K. The method starts at step 1700. Step 1702 provides a fluid assembly stamp substrate having a planar top surface, wherein a capture location provided on the top surface has a first peripheral shape, a depth, and a planar capture location bottom surface. Under the fluid assembly process, the micro-LEDs filled into the capture location in step 1704 have: a first peripheral shape, a thickness greater than the depth of the capture location, a planar bottom surface in contact with the capture location bottom surface, and a planar top surface having a first electrode extending out of the capture location. The micro-LEDs also include a fixing mechanism. In step 1704, a micro-LED with a second electrode on the bottom surface can be used, or a surface-mount micro-LED with a first electrode and a second electrode on the top surface can be used to fill the trapping location.

一方面,步驟1702中的提供壓印印章基板包括提供一具有間隔捕集位置的壓印印章基板。步驟1706提供的顯示基板具有一平面的底表面以及陣列設置的微型發光二極體連接墊,每一微型發光二極體連接墊包括形成於頂表面的第一電極,並電連接至下方的列和行控制線的矩陣。顯示基板上相鄰連接墊位置的間距與壓印印章基板上相鄰捕集位置之間的間距向匹配。步驟1708中,按壓壓印印章基板的頂表面至顯示基板的頂表面上,使每一捕集位置與一微型發光二極體連接墊接觸。步驟1710中將壓印印章基板上的微型發光二極體巨量轉移到顯示基板的微型發光二極體連接墊上。步驟1710可包括運用加熱方式促使微型發光二極體與顯示基板的連接墊形成綁定。 In one aspect, providing an imprinting stamp substrate in step 1702 includes providing an imprinting stamp substrate having spaced-apart capture locations. A display substrate is provided in step 1706 having a planar bottom surface and an array of micro-LED connection pads, each of which includes a first electrode formed on a top surface and electrically connected to an underlying matrix of column and row control lines. The spacing between adjacent connection pad locations on the display substrate matches the spacing between adjacent capture locations on the imprinting stamp substrate. In step 1708, the top surface of the imprinting stamp substrate is pressed against the top surface of the display substrate so that each capture location contacts a micro-LED connection pad. In step 1710, the micro-LEDs on the stamp substrate are transferred in bulk to the micro-LED connection pads on the display substrate. Step 1710 may include applying heat to cause the micro-LEDs to form a bond with the connection pads on the display substrate.

一方面,步驟1704提供了在微型發光二極體頂表面形成龍骨形式的固定機構,該龍骨可以是連接到第一電極(如圖13D和圖13E)的導電龍骨,或者為臨時的(可移除)不導電龍骨(如圖13A)。另一方面,步驟1702提供的壓印印章基板,其每一捕集位置的底表面塗布有包括共軛生物分子對的第一成分。然後,步驟1704中提及的固定機構為具有共軛生物分子對的第二成分,其包覆每個微型發光二極體的底表面。共軛生物分子對的例子包括生物素-鏈黴親和素、硫醇-馬來醯亞胺和疊氮化物-炔。壓印印章基板也可以進一步設置靜電力或磁力產生器,如圖14A和圖14B所示。 On the one hand, step 1704 provides a fixing mechanism in the form of a keel formed on the top surface of the micro-LED. The keel can be a conductive keel connected to the first electrode (as shown in Figures 13D and 13E) or a temporary (removable) non-conductive keel (as shown in Figure 13A). On the other hand, the bottom surface of each capture location of the stamp substrate provided in step 1702 is coated with a first component including a conjugated biomolecule pair. Then, the fixing mechanism mentioned in step 1704 is a second component having a conjugated biomolecule pair, which coats the bottom surface of each micro-LED. Examples of conjugated biomolecule pairs include biotin-streptavidin, thiol-maleimide, and azide-alkyne. The stamp substrate can also be further provided with an electrostatic or magnetic force generator, as shown in Figures 14A and 14B.

圖18為圖15A-圖15I所示的系統的軸向微型發光二極體巨量轉移法的流程圖。該方法從步驟1800開始。步驟1802提供一具有平面的頂表面的流體組裝壓印印章基板,頂表面上形成有多個捕集位置,每一捕集位置具有第一周邊形狀、具有平面的第一深度的中心部分、一具有小於第一深度的平面的第二深度的遠端以及一具有第二深度的近端。在流體組裝進程下,步驟1804使用軸向微型發光二極體填充捕集位置,每一微型發光二極體佔據相應捕集位置並具有所述第一周邊形狀及與中心部分貼合的主體部分,該主體部分的垂直體厚度大於捕集位置的第一深度,但小於二倍第一深度。微型發光二極體還具有水平平分主體部分的遠端電極,所述遠端電極與捕集位置的遠端部分貼合,所述遠端電極的垂直面的電極厚度大於捕集位置的第二深度,但小於二倍第二深度。微型發光二極體還具有水平平分主體部分的近端電極,其與捕集位置的近端部分貼合,並具有電極厚度。一方面,壓印印章電極還可以包括靜電力或磁力產生器,如圖14A和圖14B所示。 FIG18 is a flow chart of a method for mass transfer of axial micro-LEDs for the system shown in FIG15A-FIG15I. The method begins at step 1800. Step 1802 provides a fluid assembly stamp substrate having a planar top surface, with a plurality of trapping locations formed on the top surface. Each trapping location has a first peripheral shape, a center portion having a planar first depth, a distal end having a planar second depth less than the first depth, and a proximal end having the second depth. Under the fluid assembly process, step 1804 fills the trapping locations with axial micro-LEDs. Each micro-LED occupies a corresponding trapping location and has the first peripheral shape and a main portion aligned with the center portion. The main portion has a vertical body thickness greater than the first depth of the trapping location but less than twice the first depth. The micro-LED also has a distal electrode that horizontally bisects the main body portion. The distal electrode is aligned with the distal portion of the trapping location, and the electrode thickness of the vertical surface of the distal electrode is greater than the second depth of the trapping location but less than twice the second depth. The micro-LED also has a proximal electrode that horizontally bisects the main body portion, is aligned with the proximal portion of the trapping location, and has an electrode thickness. In one aspect, the stamp electrode can further include an electrostatic or magnetic force generator, as shown in Figures 14A and 14B.

一方面,步驟1802中的提供壓印印章基板包括提供一具有間距的捕集位置的壓印印章基板。步驟1806中提供具有平面的頂表面和微型發光二極體連接墊陣列的顯示基板,每一微型發光二極體連接墊包括形成於頂表面的第一電極和第二電極,所述多個電極電連接至一下方的列和行控制線的矩陣。顯示基板包括被一間距隔開的多個連接墊,該間距與將壓印印章基板上的捕集位置間隔開的間距相匹配。在步驟1808中,按壓壓印印章基板的頂表面至顯示基板的頂表面上,使每一捕集位置與一微型發光二極體連接墊對齊。在步驟1810中將微型發光二極體從壓印印章基板巨量轉移到顯示基板的微型發光二極體連接墊上。可選地,藉由加熱可以促進微型發光二極體與顯示基板連接墊電極之間的綁定。 In one aspect, providing an imprinting stamp substrate in step 1802 includes providing an imprinting stamp substrate having spaced-apart capture locations. In step 1806, providing a display substrate having a planar top surface and an array of micro-LED connection pads is performed, each micro-LED connection pad including a first electrode and a second electrode formed on the top surface, the plurality of electrodes being electrically connected to an underlying matrix of column and row control lines. The display substrate includes a plurality of connection pads separated by a spacing that matches a spacing that separates the capture locations on the imprinting stamp substrate. In step 1808, pressing the top surface of the imprinting stamp substrate onto the top surface of the display substrate aligns each capture location with a micro-LED connection pad. In step 1810, the micro-LEDs are mass-transferred from the stamp substrate to the micro-LED connection pads on the display substrate. Optionally, heat may be applied to facilitate bonding between the micro-LEDs and the display substrate connection pad electrodes.

圖19為微型發光二極體轉移的間距擴展方法的流程圖。該方法開始於步驟1900。步驟1902提供一微型發光二極體MOCVD晶圓,相鄰微型發光二極體之間具有第一間距。步驟1904將微型發光二極體釋放到流體組裝懸浮液中。步驟1906提供一具有陣列設置的阱的載體襯底,相鄰的阱之間具有第二間距,並且所述第二間距與所述第一間距不同。藉由流體組裝過程,在步驟1908中將微型發光二極體填充進載體襯底的阱中。步驟1910提供一包括捕集位置陣列的壓印印章基板,相鄰捕集位置被第二間距間隔開。步驟1912中將壓印印章 基板頂表面按壓在載體襯底頂表面上,使每一捕集位置與一相應的阱接觸。步驟1914中將微型發光二極體從載體襯底上巨量轉移至壓印印章基板上。 Figure 19 is a flow chart of a method for pitch expansion during micro-LED transfer. The method begins at step 1900. Step 1902 provides a micro-LED MOCVD wafer, wherein adjacent micro-LEDs have a first spacing between them. Step 1904 releases the micro-LEDs into a fluid assembly suspension. Step 1906 provides a carrier substrate having wells arranged in an array, wherein adjacent wells have a second spacing between them, which is different from the first spacing. In step 1908, the micro-LEDs are filled into the wells of the carrier substrate through a fluid assembly process. In step 1910, an embossing stamp substrate is provided that includes an array of trapping sites, with adjacent trapping sites separated by a second spacing. In step 1912, the top surface of the embossing stamp substrate is pressed against the top surface of a carrier substrate, such that each trapping site contacts a corresponding well. In step 1914, microluminescent diodes are mass-transferred from the carrier substrate to the embossing stamp substrate.

步驟1916提供一具有陣列設置的微型發光二極體連接墊的顯示基板,每一微型發光二極體連接墊包括至少一形成於頂表面的電極,並電連接至一下方的列和行控制線的矩陣上。顯示基板上相鄰的連接墊位置被所述第二間距間隔開。步驟1918中將壓印印章基板的頂表面按壓在顯示基板的頂表面上,使捕集位置與一相應的微型發光二極體連接墊接觸。步驟1920中將微型發光二極體從壓印印章基板上巨量轉移到顯示基板的微型發光二極體連接墊上。可選地,藉由加熱來促使微型發光二極體與顯示基板連接墊的電極形成綁定。 In step 1916, a display substrate is provided having an array of micro-LED connection pads, each of which includes at least one electrode formed on the top surface and electrically connected to an underlying matrix of column and row control lines. Adjacent connection pad locations on the display substrate are separated by the second spacing. In step 1918, the top surface of the embossing stamp substrate is pressed against the top surface of the display substrate, such that the capture locations contact a corresponding micro-LED connection pad. In step 1920, the micro-LEDs are mass-transferred from the embossing stamp substrate to the micro-LED connection pads on the display substrate. Optionally, heat is applied to cause the micro-LEDs to bond to the electrodes of the display substrate connection pads.

一方面,步驟1906、步驟1908、步驟1912和步驟1914被繞過,並藉由額外的步驟1911,即使用流體組裝工藝,將微型發光二極體直接填充至壓印印章基板的捕集位置中。 In one aspect, steps 1906, 1908, 1912, and 1914 are bypassed, and an additional step 1911 is performed to directly fill the micro-LEDs into the capture locations of the stamp substrate using a fluid assembly process.

本申請提供了微型發光二極體巨量轉移的系統和方法。給出了特定LED,載體襯底以及壓印印章基板結構的例子來說明本申請。然而,本申請不局限於上述示例。本領域技術人員可以想到本申請的其他變體和實施例。 This application provides systems and methods for mass transfer of micro-LEDs. Examples of specific LEDs, carrier substrates, and embossing stamp substrate structures are provided to illustrate this application. However, this application is not limited to the above examples. Other variations and embodiments of this application will be apparent to those skilled in the art.

Claims (17)

一種微型發光二極體巨量轉移的流體組裝載體系統,其改良在於,包括:具有平面的頂表面的流體組裝載體襯底;形成於所述載體襯底頂表面的捕集位置的陣列,每個捕集位置被配置為一個凹陷的阱以臨時固定一個流體沉積的微型發光二極體;以及微型發光二極體,填充所述載體襯底上所述的阱;其中,在載體襯底上相鄰阱之間的距離小於或等於對應的巨量轉移壓印印章上相鄰捕集位置的距離;所述載體系統還包括所述巨量轉移壓印印章,包括:具有頂表面的壓印印章基板;及在所述壓印印章基板的頂表面形成捕集位置的陣列,每個捕集位置被配置為從一個載體襯底的阱上臨時接收一個對應的微型發光二極體;其中,每個所述載體襯底的阱具有一平面的底表面;每一所述發光二極體具有與一對應的阱的底表面相互接觸的頂表面,以及一個從其底表面延伸的龍骨;以及,所述壓印印章基板捕集位被配置為接收所述發光二極體的龍骨。A fluid assembly carrier system for mass transfer of micro-LEDs is improved in that it comprises: a fluid assembly carrier substrate having a planar top surface; an array of capture locations formed on the top surface of the carrier substrate, each capture location being configured as a recessed well for temporarily fixing a fluid-deposited micro-LED; and micro-LEDs filling the wells on the carrier substrate; wherein the distance between adjacent wells on the carrier substrate is less than or equal to the distance between adjacent capture locations on the corresponding mass transfer stamp; the carrier system further comprises the The mass transfer stamp comprises: an stamp substrate having a top surface; and an array of capture locations formed on the top surface of the stamp substrate, each capture location being configured to temporarily receive a corresponding micro-LED from a well on a carrier substrate; wherein each well on the carrier substrate has a planar bottom surface; each LED has a top surface in contact with the bottom surface of a corresponding well, and a keel extending from its bottom surface; and the stamp substrate capture location is configured to receive the keel of the LED. 如請求項1所述之載體系統,其中,所述載體襯底不包括導電的走線以及電子元件。The carrier system as described in claim 1, wherein the carrier substrate does not include conductive traces and electronic components. 如請求項1所述之載體系統,其中,每個所述載體襯底的阱具有一平面的底表面;以及所述微型發光二極體為表面貼裝微型發光二極體,每個所述微型發光二極體都包括具有第一電極和第二電極的平面的頂表面,所述第一電極和所述第二電極都與一對應的載體襯底阱的底表面相互接觸。The carrier system of claim 1, wherein each well of the carrier substrate has a planar bottom surface; and the micro-light-emitting diode is a surface-mounted micro-light-emitting diode, each of the micro-light-emitting diodes includes a planar top surface having a first electrode and a second electrode, and the first electrode and the second electrode are in contact with the bottom surface of a corresponding carrier substrate well. 如請求項3所述之載體系統,其中,每個所述微型發光二極體還包括一個從所述微型發光二極體的底表面延伸的不導電的龍骨。The carrier system of claim 3, wherein each of the micro-LEDs further comprises a non-conductive keel extending from a bottom surface of the micro-LED. 如請求項1所述之載體系統,其中,每個所述載體襯底阱具有一平面的底表面;以及所述微型發光二極體為垂直微型發光二極體,每個所述微型發光二極體都包括與一對應的載體襯底的阱相互接觸的具有第一電極的平面的頂表面,以及位於微型發光二極體底表面上的第二電極。The carrier system of claim 1, wherein each of the carrier substrate wells has a planar bottom surface; and the micro-LEDs are vertical micro-LEDs, each of the micro-LEDs including a planar top surface having a first electrode in contact with a corresponding carrier substrate well, and a second electrode located on the bottom surface of the micro-LED. 如請求項5所述之載體系統,其中,每個所述發光二極體的第二電極為從發光二極體的底表面延伸的導電的龍骨。The carrier system of claim 5, wherein the second electrode of each light-emitting diode is a conductive keel extending from the bottom surface of the light-emitting diode. 如請求項1所述之載體系統,其中,所述載體襯底阱具有第一周邊形狀;以及,所述微型發光二極體具有所述第一周邊形狀。The carrier system of claim 1, wherein the carrier bottom well has a first peripheral shape; and the micro light-emitting diode has the first peripheral shape. 如請求項1所述之載體系統,其中,還包括:第一流體組裝載體襯底,具有形成在所述第一流體組裝載體襯底的頂表面的阱的陣列;第二流體組裝載體襯底,具有形成在所述第二流體組裝載體襯底的頂表面的阱的陣列;第三流體組裝載體襯底,具有形成在所述第三流體組裝載體襯底的頂表面的阱的陣列;複數被配置為發射第一波長光的微型發光二極體,每個佔據所述第一流體組裝載體襯底中的一個對應的阱;複數被配置為發射第二波長光的微型發光二極體,每個佔據所述第二流體組裝載體襯底中的一個對應的阱;及複數被配置為發射第三波長光的微型發光二極體,每個佔據所述第三流體組裝載體襯底中的一個對應的阱。The carrier system as claimed in claim 1, further comprising: a first fluid assembly carrier substrate having an array of wells formed on the top surface of the first fluid assembly carrier substrate; a second fluid assembly carrier substrate having an array of wells formed on the top surface of the second fluid assembly carrier substrate; a third fluid assembly carrier substrate having an array of wells formed on the top surface of the third fluid assembly carrier substrate; a plurality of a plurality of micro-LEDs configured to emit light of a first wavelength, each occupying a corresponding well in the substrate of the first fluid assembly carrier; a plurality of micro-LEDs configured to emit light of a second wavelength, each occupying a corresponding well in the substrate of the second fluid assembly carrier; and a plurality of micro-LEDs configured to emit light of a third wavelength, each occupying a corresponding well in the substrate of the third fluid assembly carrier. 如請求項1所述之載體系統,其中,還包括:位於所述載體襯底下方的吸引力產生器,所述吸引力產生器選自由磁力產生器和靜電力產生器組成的組,用於臨時固定所述載體襯底的阱中的所述微型發光二極體。The carrier system as described in claim 1 further includes: an attraction force generator located below the carrier substrate, the attraction force generator being selected from a group consisting of a magnetic force generator and an electrostatic force generator, and being used to temporarily fix the micro-light-emitting diode in the well of the carrier substrate. 如請求項1所述之載體系統,其中,每個所述載體襯底的阱的底表面塗覆有包括共軛生物分子對的第一組分;以及,其中,每個所述微型發光二極體包括頂表面,所述頂表面塗覆有包括共軛生物分子對的第二組分,所述頂表面與對應的一個載體襯底的阱的底表面相互接觸。A carrier system as described in claim 1, wherein the bottom surface of each well of the carrier substrate is coated with a first component comprising a conjugated biomolecule pair; and wherein each of the micro-light-emitting diodes includes a top surface, the top surface is coated with a second component comprising a conjugated biomolecule pair, and the top surface is in contact with the bottom surface of a corresponding well of the carrier substrate. 一種微型發光二極體巨量轉移方法,其改良在於,包括:在晶圓上製造微型發光二極體;將所述微型發光二極體從晶圓上釋放到懸浮液中;將所述微型發光二極體流體沉積轉移到載體襯底上;將所述微型發光二極體從所述載體襯底轉移到巨量轉移壓印印章上;以及將所述微型發光二極體從所述巨量轉移壓印印章轉移到顯示基板上;其中,所述微型發光二極體巨量轉移方法還包括:將所述微型發光二極體流體沉積轉移到載體襯底上的步驟之前,在每個微型發光二極體上形成一個龍骨,所述龍骨延伸在所述發光二極體裸露的底表面上。A method for mass-transferring micro-LEDs is improved in that it includes: manufacturing micro-LEDs on a wafer; releasing the micro-LEDs from the wafer into a suspension; fluid-depositing the micro-LEDs onto a carrier substrate; transferring the micro-LEDs from the carrier substrate onto a mass-transfer stamp; and transferring the micro-LEDs from the mass-transfer stamp onto a display substrate. The method further includes: forming a keel on each micro-LED before fluid-depositing the micro-LEDs onto the carrier substrate, wherein the keel extends over the exposed bottom surface of the LED. 如請求項11所述之微型發光二極體巨量轉移方法,其中,所述載體襯底具有一平面的頂表面以及形成在所述載體襯底頂表面上的阱的陣列,所述阱填充有所述微型發光二極體;以及將所述微型發光二極體從所述載體襯底轉移到巨量轉移壓印印章上的步驟包括:將所述巨量轉移壓印印章的頂表面按壓在所述載體襯底的頂表面上,使得形成在所述巨量轉移壓印印章的頂表面上的巨量轉移壓印印章捕集位的陣列與載體襯底的阱中對應的微型發光二極體相互接合。A method for mass transfer of micro-luminescent diodes as described in claim 11, wherein the carrier substrate has a planar top surface and an array of wells formed on the top surface of the carrier substrate, the wells being filled with the micro-luminescent diodes; and the step of transferring the micro-luminescent diodes from the carrier substrate to a mass transfer stamp comprises: pressing the top surface of the mass transfer stamp against the top surface of the carrier substrate so that the array of mass transfer stamp capture bits formed on the top surface of the mass transfer stamp are bonded to the corresponding micro-luminescent diodes in the wells of the carrier substrate. 如請求項12所述之微型發光二極體巨量轉移方法,其中,所述載體襯底的阱具有第一周邊形狀以及平面的阱的底表面;以及將所述微型發光二極體流體沉積轉移到載體襯底上的步驟包括將具有所述第一周邊形狀的微型發光二極體填充進所述阱中。A method for mass transfer of micro-LEDs as described in claim 12, wherein the well of the carrier substrate has a first peripheral shape and a planar bottom surface of the well; and the step of transferring the micro-LED fluid deposition onto the carrier substrate includes filling the micro-LEDs having the first peripheral shape into the well. 如請求項12所述之微型發光二極體巨量轉移方法,其中,所述載體襯底的阱的陣列中相鄰的阱之間具有一間距;以及所述巨量轉移壓印印章的捕集位置的陣列中相鄰捕集位置之間的間距大於或者等於所述載體襯底的阱的陣列中相鄰的阱之間的間距。A method for mass transfer of micro-light-emitting diodes as described in claim 12, wherein adjacent wells in the array of wells on the carrier substrate have a spacing between them; and the spacing between adjacent capture positions in the array of capture positions of the mass transfer stamp is greater than or equal to the spacing between adjacent wells in the array of wells on the carrier substrate. 如請求項11所述之微型發光二極體巨量轉移方法,其中,將所述微型發光二極體從所述載體襯底轉移到巨量轉移壓印印章上的步驟包括配置所述巨量轉移壓印印章的捕集位置以接收所述微型發光二極體的龍骨。The method for mass transfer of microluminescent diodes as described in claim 11, wherein the step of transferring the microluminescent diodes from the carrier substrate to a mass transfer stamp includes configuring a capture position of the mass transfer stamp to receive the keel of the microluminescent diode. 如請求項11所述之微型發光二極體巨量轉移方法,其中,還包括:將所述微型發光二極體流體沉積轉移到載體襯底上的步驟之前,在所述載體襯底的阱的底表面塗覆具有共軛生物分子對的第一組分;以及在所述懸浮液中,在所述微型發光二極體上塗覆具有共軛生物分子對的第二組分。The method for mass transfer of micro-luminescent diodes as described in claim 11 further includes: before the step of transferring the micro-luminescent diode fluid deposition onto the carrier substrate, coating the bottom surface of the well of the carrier substrate with a first component having a conjugated biomolecule pair; and coating the micro-luminescent diode with a second component having a conjugated biomolecule pair in the suspension. 如請求項11所述之微型發光二極體巨量轉移方法,其中,還包括:將所述微型發光二極體流體沉積轉移到載體襯底上的步驟之前,在所述載體襯底的下方使用吸引力產生器,所述吸引力產生器選自由磁力產生器和靜電力產生器組成的組,用於臨時固定所述載體襯底的阱中的所述微型發光二極體。The method for mass transfer of micro-LEDs as described in claim 11 further includes: before the step of transferring the micro-LED fluid deposition onto the carrier substrate, using an attraction force generator below the carrier substrate, wherein the attraction force generator is selected from a group consisting of a magnetic force generator and an electrostatic force generator, and is used to temporarily fix the micro-LEDs in the well of the carrier substrate.
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