TWI900766B - High temperature susceptor with fast heat drain capability - Google Patents

Abstract

A substrate support assembly includes a cooling plate forming one or more channels configured to receive heat transfer fluid. The substrate support assembly further includes a gas distribution plate disposed on the cooling plate. The gas distribution plate forms an interior volume configured to receive a gas. The substrate support assembly further includes a heating plate disposed on the gas distribution plate. The heating plate includes a resistive heater. The substrate support assembly further includes an electrostatic chuck disposed on the heating plate. The electrostatic chuck is configured to support a substrate in a processing chamber.

Description

High temperature base with rapid heat dissipation capability

Embodiments of the present disclosure relate to susceptors, such as those used in conjunction with substrate processing systems, and particularly to susceptors for high temperature applications.

In substrate processing and other electronic device manufacturing, substrate processing operations are performed within a processing chamber. Controlling the temperature of substrates within the processing chamber is crucial to preventing defects.

The following is a brief summary of the disclosure, intended to provide a basic understanding of some aspects of the disclosure. This summary is not intended to be an extensive overview of the disclosure. It is not intended to identify key or critical elements of the disclosure, nor is it intended to describe any scope of a specific implementation or any scope of claims of the disclosure. Its sole purpose is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description that follows.

In one aspect of the disclosure, a substrate support assembly includes a cooling plate having one or more channels configured to receive a heat transfer fluid. The substrate support assembly further includes a gas distribution plate disposed on the cooling plate. The gas distribution plate defines an internal volume configured to receive a gas. The substrate support assembly further includes a heating plate disposed on the gas distribution plate. The heating plate includes a resistive heater. The substrate support assembly further includes an electrostatic chuck disposed on the gas heating plate. The electrostatic chuck is configured to support a substrate in a processing chamber.

In another aspect of the disclosure, a system includes a substrate support assembly disposed in a processing chamber. The substrate support assembly includes a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate. The system further includes a controller. The controller causes a heat transfer fluid to flow through one or more channels formed in the cooling plate. The controller further causes the gas to flow through the gas distribution plate to an opening formed in the heating plate, and from the opening in the heating plate to a position between the upper surface of the substrate support assembly and a substrate disposed on the substrate support assembly. The controller further causes a resistive heater disposed in the heating plate to heat the heating plate.

In another aspect of the disclosure, a method includes flowing a heat transfer fluid through one or more fluids formed by a cooling plate of a substrate support assembly. The method further includes flowing the gas through a gas distribution plate of the substrate support assembly disposed on the cooling plate, through openings formed in a heating plate of the substrate support assembly disposed on the cooling plate, and to a location between a top surface of the substrate support assembly and a substrate in a processing chamber disposed on the substrate support assembly. In response to the processing chamber being in an idle state, the method further includes heating the heating plate with a resistive heater disposed in the heating plate.

Embodiments described herein relate to a high-temperature pedestal (e.g., a substrate support assembly) with rapid heat removal capabilities. The high-temperature pedestal can be configured for use at temperatures between approximately 300 and 400 degrees Celsius. The high-temperature pedestal can be configured to absorb heat during substrate processing operations (e.g., plasma operations) at temperatures between approximately 350 and 400 degrees Celsius.

Substrate processing systems are used to process substrates. Substrates are transferred to processing chambers via a robot (e.g., a transfer robot). The processing chamber is sealed, and substrate processing operations (e.g., chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma-enhanced CVD (PECVD), plasma-enhanced ALD (PEALD), etching, etc.) are performed on the substrates. Substrate temperature is controlled before, during, and after substrate processing operations. Failure to control substrate temperature can lead to substrate defects, inconsistent substrate performance, and reduced yield.

In conventional systems, a susceptor is used to support a substrate and to attempt to control the substrate's temperature. When plasma is formed above the substrate in a processing chamber, the plasma dissipates a significant amount of heat, and conventional susceptors are unable to quickly dissipate this heat to prevent overheating of the substrate. Some conventional susceptors have a heating element and a cooling element, where the cooling element removes the heating energy generated by the heating element.

The components, systems, and methods disclosed herein provide a high temperature susceptor with rapid heat removal capabilities.

A substrate support assembly (e.g., a susceptor) is configured to support a substrate (e.g., glass, display, wafer, semiconductor) in a processing chamber (e.g., of a substrate processing system). The substrate support assembly includes a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate. An electrostatic device is disposed on (or is part of) the heating plate. An electrostatic chuck is configured to support the substrate (e.g., the substrate is disposed on the upper surface of the electrostatic chuck, and the electrostatic chuck secures the substrate to the substrate support assembly via electrostatic force).

The cooling plate defines one or more channels for receiving a heat transfer fluid. The gas distribution plate defines an internal volume configured to receive a gas (e.g., helium, argon, etc.). In some embodiments, the heating plate includes a resistive heater (e.g., an electric heater).

A controller (e.g., coupled to a substrate support assembly) determines whether a processing chamber is in an idle state (e.g., not performing a substrate processing operation) or an active state (e.g., performing a substrate processing operation). In some embodiments, the controller determines whether the processing chamber is in an idle state or an active state based on temperature data received from a sensor associated with the substrate support assembly (e.g., located proximate to the substrate, located proximate to an electrostatic chuck, or located proximate to a top surface of the substrate support assembly). In response to the temperature data satisfying a first threshold temperature, the controller determines that the processing chamber is in an idle state. In response to the temperature data satisfying a second threshold temperature, the controller determines that the processing chamber is in an active state. In response to determining that the processing chamber is in an idle state, the controller may cause the resistive heater to heat the heating plate (e.g., and the substrate). In response to determining that the processing chamber is in an active state, the controller may prevent the resistive heater from heating the heating plate and, in some embodiments, flow a heat transfer fluid through a cooling plate to cool the substrate. In some embodiments, the controller continuously flows the heat transfer fluid through the cooling plate. The gas distribution plate provides a buffer (e.g., a temperature gradient, a heat plug) between the cooling plate and the heating plate. In some embodiments, the temperature gradient between the resistive heater and the heat transfer fluid is between about 50 and about 200 degrees Celsius. In some embodiments, the temperature gradient between the resistive heater and the heat transfer fluid is between about 50 and about 100 degrees Celsius. In some embodiments, the heat transfer fluid is at a temperature of about 200 to about 300 degrees Celsius and the heating plate is at a temperature of about 300 to about 400 degrees Celsius.

The components, systems, and methods disclosed herein offer advantages over conventional solutions. Compared to conventional solutions that are configured for use at low temperatures, the substrate support assembly of the present disclosure is configured for use at elevated temperatures (e.g., approximately 300 to approximately 400 degrees Celsius). Compared to conventional solutions that do not heat a substrate to an elevated temperature and do not maintain (cool) the substrate's temperature during substrate processing operations, the substrate support assembly of the present disclosure is configured to heat a substrate to an elevated temperature (e.g., approximately 300 to approximately 400 degrees Celsius) and maintain the substrate at the elevated temperature (e.g., by cooling the substrate to substantially the same temperature) during substrate processing operations. Compared to conventional solutions, the substrate support assembly of the present disclosure can more precisely control substrate temperature (e.g., within 10 degrees Celsius before, during, and after substrate processing operations, improving substrate temperature uniformity and control). The substrate support assembly of the present disclosure provides a buffer (e.g., a thermal plug) between the cooling plate and the heating plate, allowing the heat transfer fluid to be at a lower temperature (e.g., more efficient and less energy-consuming) without taking away the heating energy provided by the resistive heater in the heating plate. Compared to conventional solutions, the substrate support assembly of the present disclosure has fewer substrate defects, more consistent substrate performance, and higher yields.

Although some embodiments of the present disclosure describe the use of resistive heaters (e.g., electric heaters) in the heating plate, in other embodiments, one or more other types of heaters may be used in the heating plate, such as one or more of a heat transfer fluid, a solid-state cryocooler (e.g., a Peltier device, a Peltier heater, a Peltier heat pump, a thermoelectric cell array, a thermoelectric heat pump, etc.), and/or the like.

FIG1 illustrates a substrate support assembly 100 according to certain embodiments. In some embodiments, substrate support assembly 100 includes one or more of an electrostatic chuck, a vacuum chuck, a susceptor, a workpiece support surface, and/or the like. In some embodiments, substrate support assembly 100 clamps a substrate to the top surface of a base body 110 (e.g., to provide a more secure and uniform contact with the base body 110). The substrate may be a wafer, a semiconductor, glass, a glass substrate, an electronic device, a glass device, a display device, and/or the like.

In some embodiments, the substrate support assembly 100 is disposed in a processing chamber, such as a plasma processing chamber, an annealing chamber, a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, an ion implantation chamber, an etching chamber, a deposition chamber (e.g., an atomic layer deposition (ALD) chamber, a chemical vapor deposition (CVD) chamber, a physical vapor deposition (PVD) chamber, and/or plasma-enhanced (PE) versions thereof, such as PEALD, PECVD, PEPVD, etc.), an annealing chamber, or the like. In some embodiments, the processing chamber has a high-density plasma (HDP) source having a high temperature (e.g., greater than 350 degrees Celsius) to provide a significant amount of heat to the substrate. It is known that excessive heat can increase substrate temperature and cause problems with the substrate (e.g., causing problems with devices on glass). To precisely control substrate temperature, a substrate support assembly 100 (e.g., susceptor body 110) comprising a resistive heater and a heat transfer fluid (e.g., a high-temperature heat transfer fluid) is used to heat the substrate and remove excessive heat from the plasma source (e.g., to maintain the substrate at a constant temperature) to maintain a set substrate temperature.

The substrate support assembly 100 can have both heating and cooling functions and can operate at high temperatures (e.g., due to an internal heater such as the resistive heater 122) while dissipating a large amount of external heat in a short period of time (e.g., due to a flowing coolant). A substrate support assembly (e.g., a susceptor) can be used to support the substrate and control its temperature. When plasma is formed above the substrate, the plasma dissipates a large amount of heat. The substrate support assembly quickly dissipates heat to prevent overheating of the substrate. The present disclosure can combine a heating element (e.g., the resistive heater 122) and a heat transfer fluid channel (e.g., channel 142) into a single body (e.g., the susceptor body 110). A gas distribution plate 130 (e.g., a helium distribution layer (HDL)) can be positioned between the resistive heater 122 and the channel 142 to conserve energy. The gas distribution plate 130 can distribute the gas flow so that the gas pressure between the substrate 160 and the top surface of the substrate support assembly 100 is uniform (for example, the gas distribution plate 130 uniformly distributes the gas to the back side of the substrate 160), and the gas distribution plate 130 can be used as a heat plug between the resistive heater 122 and the heat transfer fluid (for example, a coolant) to prevent the heat transfer fluid from flowing and carrying away the heating energy of the resistive heater 122 (for example, the gas distribution plate 130 generates a threshold temperature difference between the channel 142 and the resistive heater 122, which allows the use of a more reliable low-temperature coolant and a smaller heating power to maintain the temperature difference). The resistive heater 122 and heat transfer fluid can maintain the substrate 160 at approximately 200 to 400 degrees Celsius and allow for rapid heat removal during substrate processing operations (e.g., radio frequency (RF), plasma, etc.). The heating element (e.g., the resistive heater 122) can be positioned near the top surface of the substrate support assembly 100, and the channel 142 can be positioned near the bottom surface of the substrate support assembly 100 (e.g., with the gas distribution plate 130 therebetween).

The gas distribution plate 130 can increase the distance between the resistive heater 122 and the channel 142 to provide a thermal plug. The gas distribution plate 130 can be substantially hollow to reduce the amount of heat conducted through the solid material of the gas distribution plate 130. The material of the heater plate 120 between the resistive heater 122 and the gas distribution plate 130 can distribute heat laterally. The gas distribution plate 130 allows for a greater temperature difference between the resistive heater 122 and the heat transfer fluid in the channel 142. A lower temperature heat transfer fluid is more efficient and uses less energy. Low heating power is used during idle states of the processing chamber, and the substrate support assembly 100 exhausts heat within seconds of the processing chamber being in an active state (e.g., RF is on).

In some embodiments, the heat transfer fluid is continuously flowed through the channel 142 (e.g., during both the active and idle states of the processing chamber, possibly without a heat transfer fluid shutoff valve) to provide a faster response to temperature changes. In some embodiments, the heat transfer fluid is flowed through the channel 142 during the active state of the processing chamber and is not flowed through the channel 142 during the idle state of the processing chamber (e.g., with a heat transfer fluid shutoff valve) to conserve energy during the idle state. In some embodiments, the heat transfer fluid is flowed through the channel 142 before the active state of the processing chamber (e.g., when a process recipe begins).

The substrate support assembly 100 includes a base body 110. The substrate support assembly 100 may include a base (e.g., an electrostatic chuck (ESC) or E-chuck) base) that includes the base body 110. The base body 110 includes a resistive heater 122 (e.g., a resistive heater, a resistive heater, etc.). The base body 110 defines an internal volume 132 for receiving a gas and a channel 142 (e.g., a heating and/or cooling channel) for receiving a heat transfer fluid. The internal volume 132 is disposed above the channel 142. The resistive heater 122 is disposed above the internal volume 132. The internal volume 132 is a buffer (e.g., a thermal plug) between the cooling provided by the heat transfer fluid in the channel 142 and the resistive heater 122.

In some embodiments, the base body 110 has one or more plates, and each of the plates includes one or more of a heater 122, an internal volume 132, or a channel 142. In some embodiments, the heating plate 120 includes a resistive heater, the gas distribution plate 130 forms the internal volume 132 for receiving gas, and the cooling plate forms the channel 142 for receiving a heat transfer fluid. In some embodiments, the heating plate 120 is the top plate, the gas distribution plate 130 is the middle plate, and the cooling plate 140 is the bottom plate (e.g., the top plate is on the middle plate, and the middle plate is on the bottom plate).

In some embodiments, the heat transfer fluid is a synthetic organic heat transfer medium. In some embodiments, the heat transfer fluid can be used in a closed forced circulation heat transfer system in the liquid phase. In some embodiments, the heat transfer fluid can be used within an operating range (e.g., approximately -5 degrees Celsius to approximately 400 degrees Celsius) while maintaining pressure. In some embodiments, the heat transfer fluid has a boiling range of greater than approximately 350 degrees Celsius to approximately 400 degrees Celsius at atmospheric pressure. In some embodiments, the heat transfer fluid used does not leave deposits on the walls. In some embodiments, the heat transfer fluid has a liquid, transparent appearance at approximately 20 degrees Celsius. In some embodiments, the chlorine content of the heat transfer fluid is less than approximately 10 parts per million. In some embodiments, the heat transfer fluid has a density of about 1.0 to about 1.1 (about 1.04 to about 1.05) grams per milliliter at about 20 degrees Celsius. In some embodiments, the heat transfer fluid has a viscosity of about 42 to about 52 square millimeters per second at about 20 degrees Celsius. In some embodiments, the heat transfer fluid is compatible with graphite, polytetrafluoroethylene (PTFE), and fluoroelastomers. In some embodiments, the heat transfer fluid can be heated to a temperature of about 350 to about 400 degrees Celsius. In some embodiments, the heat transfer fluid can be heated to a temperature of about 200 to about 400 degrees Celsius. In some embodiments, the heat transfer fluid can be heated to a temperature of about 200 to about 300 degrees Celsius. In some embodiments, the heat transfer fluid can be heated to a temperature between approximately 300 and 400 degrees Celsius. In some embodiments, the heat transfer fluid is configured to maintain the susceptor body 110 within a range of approximately 10 degrees Celsius during substrate processing. In some embodiments, the substrate support assembly 100 (e.g., the susceptor body 110) includes one or more resistive heaters 122 in addition to the heat transfer fluid to control the temperature of the substrate.

In some embodiments, the substrate support assembly 100 (eg, the base body 110 ) includes an electrostatic chuck 150 on the heating plate 120 . In some embodiments, the electrostatic chuck 150 is configured to support a substrate 160 .

In some embodiments, the substrate is disposed (e.g., fixed or electrostatically fixed) on the substrate support assembly 100 (e.g., the susceptor body 110) (e.g., via the electrostatic chuck 150). In some embodiments, in response to the processing chamber being in an idle state (e.g., not performing substrate processing operations), the substrate support assembly 100 maintains the substrate temperature within plus or minus ten degrees Celsius (e.g., a predetermined temperature of approximately 200 to approximately 350 degrees Celsius) via the resistive heater 122. In response to the processing chamber being in an active state (e.g., performing substrate processing operations, RF is on, plasma processing is occurring, etc.), the substrate support assembly 100 maintains the substrate temperature within plus or minus ten degrees Celsius via the heat transfer fluid in the channel 142. The substrate support assembly 100 is configured to remove heat from a plasma source (eg, from a substrate) during substrate processing operations.

In some embodiments, the heating plate 120 and the gas distribution plate 130 are coupled to each other (e.g., joined, fastened, welded, adhered, etc.). In some embodiments, the gas distribution plate 130 and the cooling plate 140 are coupled to each other (e.g., joined, fastened, welded, adhered, etc.). In some embodiments, the lower surface of the gas distribution plate and at least a portion of the upper surface (e.g., a flat upper surface) of the cooling plate 140 form an internal volume 132. In some embodiments, at least a portion of the upper surface of the cooling plate 140 is fixed (e.g., joined, fastened, welded, etc.) to at least a portion (e.g., a peripheral portion, an inner portion, etc.) of the lower surface of the gas distribution plate 130. In some embodiments, the upper surface of the cooling plate 140 and the lower surface (e.g., a flat upper surface) of the gas distribution plate form the internal volume 132 (e.g., are fixed to each other). In some embodiments, the upper surface of the cooling plate 140 and the lower surface (e.g., a flat upper surface) of the gas distribution plate form an internal volume 132 (e.g., fixed to each other). In some embodiments, the upper surface of the gas distribution plate 130 and the lower surface of the heating plate 120 form an internal volume 132 (e.g., fixed to each other).

In some embodiments, at least a portion of the base body 110 is made of a metal substrate and a ceramic. The metal substrate may be one or more of an aluminum substrate, a magnesium substrate, a titanium substrate, a cobalt substrate, or a cobalt-nickel alloy substrate. The ceramic may be one or more of silicon carbide, carbon fiber, boron filament, aluminum, etc. The ceramic may be particles, fibers, filaments, and/or the like. In some embodiments, the base body 110 is approximately 70% ceramic by volume and approximately 30% metal by volume. In some embodiments, the base body 110 has at least approximately 40% ceramic by volume (e.g., at least approximately 50% ceramic particles by volume). In some embodiments, the base body 110 is formed by dispersing a strengthening material (e.g., ceramic particles) in a metal substrate. In some embodiments, a reinforcing material (e.g., carbon fiber coated with nickel or titanium boride) is coated to prevent chemical reactions with the metal substrate, which can be a monolithic material with the reinforcing material embedded in it.

In some embodiments, the electrostatic chuck 150 includes a coating (e.g., plasma spray coating, electrostatic chuck layer, aluminum oxide, one or more dielectric materials, etc.). The coating may be the upper surface of the electrostatic chuck 150. The coating 118 protects the susceptor body 110 from substrate processing operations. In some embodiments, the corresponding coefficients of thermal expansion (CTE) of the cooling plate 140, gas distribution plate 130, heating plate 120, electrostatic chuck 150, and coating 118 are within a threshold range (e.g., approximately 10%, approximately 5%, or approximately 1%).

In some embodiments, a gas distribution plate 130 (e.g., a helium distribution plate) is secured (e.g., via fasteners such as screws, bolts, etc.) to a component of the susceptor body 110 (e.g., cooling plate 140). The gas distribution plate 130 includes an internal volume 132 (e.g., a channel). Gas (e.g., helium, argon, etc.) flows through the internal volume. Holes (e.g., openings, channels) in the susceptor body 110 (e.g., holes in the coating, holes in the heater plate 120, holes in the electrostatic chuck 150) are aligned with one or more portions of the internal volume 132. The gas flows through the internal volume 132 and the holes to a location above the susceptor body 110 (e.g., a location below the substrate 160). The gas distribution plate 130 can distribute the gas substantially evenly to different locations below the substrate via the holes 119. The substrate support assembly 100 (e.g., the electrostatic chuck 150) can use voltage to secure the substrate 160 to the susceptor body 110. The pressure provided by the gas flowing through the internal volume 132 and the apertures can be less than the pressure provided by the voltage applied to the electrostatic chuck securing the substrate 160 to the susceptor body 110. In some embodiments, at least a portion of the gas distribution plate 130 includes a coating (e.g., plasma spray, aluminum oxide, dielectric material, etc.) that prevents corrosion during substrate processing.

In some embodiments, the substrate support assembly 100 includes a pedestal shaft 170. The pedestal shaft 170 is disposed beneath the cooling plate 140. In some embodiments, at least a portion of the pedestal shaft 170 includes a coating (e.g., plasma spray, aluminum oxide, or a dielectric material) that prevents corrosion during substrate processing. In some embodiments, at least a portion (e.g., an outer portion) of the electrostatic chuck 150, the heating plate 120, the gas distribution plate 130, the cooling plate 140, and/or the pedestal shaft 170 includes a coating (e.g., plasma spray, aluminum oxide, or a dielectric material) that prevents corrosion during substrate processing.

The heat transfer fluid is configured to flow through the supply channel in the base shaft 170 to the channel 142 in the base body 110, and from the channel 142 in the base body 110 to the return channel in the base shaft 170. The heat transfer fluid may flow through the supply channel, the channel 142, and the return channel at a rate of approximately 50 to approximately 150 liters per minute. The heat transfer fluid may be at a temperature between approximately 300 and approximately 400 degrees Celsius. In some embodiments, the base shaft 170 forms the supply channel and the return channel. In some embodiments, the supply pipe forms the supply channel, and the return pipe forms the return channel. The supply and return lines are routed through the interior volume of the base shaft 170.

In some embodiments, the substrate support assembly 100 includes a manifold (e.g., a high-temperature heat transfer fluid manifold). A heat transfer fluid can flow from a heat transfer fluid supply (e.g., a heat transfer fluid source, a pump, a valve, etc.) through a supply channel, through a first channel in the manifold, through channel 142, through a second channel in the manifold, and through a return channel. The heat transfer fluid from the return channel can be processed (e.g., heated, cooled, filtered, increased in flow rate, pumped, etc.) and provided to the supply channel. The manifold can be secured (e.g., fastened, bonded, etc.) to the susceptor body 110 (e.g., to the cooling plate 140). In some embodiments, the manifold is secured to one or more of the cooling plate 140, the gas distribution plate 130, and/or the susceptor shaft 170.

Gas (e.g., helium, argon, etc.) is configured to flow through gas channels in the susceptor shaft 170 to the internal volume 132 in the gas distribution plate 130, and through holes in the susceptor shaft 110 (e.g., the heater plate 120, the electrostatic chuck 150, etc.) to a location below the substrate 160. In some embodiments, the susceptor shaft 170 forms the gas channel. In some embodiments, a gas tube forms the gas channel. The gas channel is routed through the internal volume of the susceptor shaft 170.

In some embodiments, each of the supply and return channels has an inner diameter of about 0.5 to about 1.5 inches (e.g., about 1 inch), and the gas channel has an inner diameter of about 0.2 to about 0.3 inches (e.g., about 0.25 inches).

The processing chamber can be used to perform substrate processing operations that increase the temperature within the processing chamber. The substrate support assembly 100 can heat the susceptor body 110 to a temperature that is greater than room temperature but less than the temperature of the substrate processing operations. In some examples, the substrate processing operations are performed at a temperature greater than the temperature of the susceptor body 110. For example, the substrate processing operations may be performed at a temperature greater than 350 degrees Celsius, and the resistive heater 122 can heat the susceptor body 110 to approximately 350 degrees Celsius. During an idle state of the processing chamber (e.g., when no substrate processing operations are being performed), the resistive heater 122 can heat the substrate to a temperature between approximately 300 and approximately 400 degrees Celsius (e.g., approximately 350 degrees Celsius). During an active state of the processing chamber (e.g., performing a substrate processing operation), the heat transfer fluid in the channel 142 may cool the substrate to a temperature of about 300 to about 400 degrees Celsius (e.g., about 350 degrees Celsius).

In some embodiments, the controller 109 controls the substrate support assembly 100, the processing chamber, the robot, one or more control valves, and/or various aspects of the substrate processing system. The controller 109 is and/or includes a computing device, such as a personal computer, a server computer, a programmable logic controller (PLC), a microcontroller, etc. The controller 109 includes one or more processing devices. In some embodiments, these processing devices are general-purpose processing devices, such as a microprocessor, a central processing unit, or the like. More specifically, in some embodiments, the processing device is a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor that executes another instruction set or a processor that implements a combination of instruction sets. In some embodiments, the processing device is one or more special-purpose processing devices, such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), a network processor, or the like. In some embodiments, the controller 109 may include a data storage device (e.g., one or more disk drives and/or solid-state drives), main memory, non-volatile memory, a network interface, and/or other components. In some embodiments, the controller 109 executes instructions to perform any one or more of the methods or processes described herein. The instructions are stored in a computer-readable storage medium, such as main memory, non-volatile memory, auxiliary storage, and/or a processing device (during execution of the instructions). In some embodiments, the controller 109 is used to control one or more parameters of the substrate support assembly 100 (e.g., temperature, pressure, flow rate, voltage, etc.). The controller 109 receives sensor data from one or more sensors associated with the substrate support assembly 100 .

In some embodiments, one or more sensors provide sensor data to the controller 109. The sensors may include one or more of a thermocouple sensor, a thermal sensor, a temperature sensor, a pressure sensor, a flow rate sensor, a voltage sensor, and/or the like.

In some embodiments, the controller 109 receives sensor data related to the temperature of the substrate (e.g., the temperature of the susceptor body 110) from a sensor (e.g., a thermocouple, a thermistor, or a temperature sensor). In response to the substrate temperature reaching a first threshold temperature (e.g., greater than approximately 350 degrees Celsius), the controller 109 prevents the resistive heater 122 from heating the heating plate 120 and directs heat transfer fluid through the channel 142 to cool the substrate. In response to the substrate temperature reaching a second threshold temperature (e.g., less than approximately 350 degrees Celsius), the controller 109 directs the resistive heater 122 to heat the heating plate 120 to heat the substrate. In some embodiments, the controller 109 causes the heat transfer fluid to flow through the channel 142 during both an idle state and an active state of the processing chamber (e.g., by actuating a shutoff valve fluidly coupled to the substrate support assembly). In some embodiments, the controller 109 causes the heat transfer fluid to flow through the channel 142 during the active state of the processing chamber (e.g., by actuating the shutoff valve), and the controller 109 prevents the heat transfer fluid from flowing through the channel 142 during the idle state of the processing chamber (by actuating the shutoff valve).

In some embodiments, the controller 109 receives sensor data related to the gas pressure associated with the gas distribution plate 130 from a sensor (e.g., a pressure sensor, a flow rate sensor, etc.). In some embodiments, the sensor data is associated with a gas inlet (e.g., a gas channel in the base shaft 170). In some embodiments, the sensor data is associated with the internal volume 132. In some embodiments, the sensor data is associated with a position below the substrate 160 disposed on the base body 110. The controller 109 can control the gas at a threshold pressure value. In some embodiments, the controller 109 receives a pressure value associated with the electrostatic clamping force that secures the substrate 160 to the base body 110. In some embodiments, the threshold pressure value of the gas is determined based on pressure data (e.g., electrostatic clamping).

In some embodiments, the system includes a substrate support assembly 100, a controller 109, one or more sensors, one or more fluid temperature control devices (e.g., fluid heaters, fluid coolers, etc.), and one or more flow rate control devices (e.g., pumps, valves, recirculation pumps, etc.).

In response to activating (e.g., turning on, actuated by the controller 109) the substrate processing apparatus and/or in response to the controller 109 receiving sensor data (e.g., temperature data) indicating that the processing chamber has reached a first threshold temperature (e.g., less than 350 degrees Celsius in an idle state), the controller 109 causes the resistive heater 122 to heat the heater plate 120.

In response to actuating (e.g., turning on, actuated by the controller 109) the substrate processing apparatus and/or in response to the controller 109 receiving sensor data (e.g., temperature data) indicating that the processing chamber has reached a second threshold temperature (e.g., greater than 350 degrees Celsius in the active state), the controller 109 causes a flow rate regulating device (e.g., a pump, a recirculation pump, etc.) to flow the heat transfer fluid through the supply channel, the channel 142, and the return channel.

In some embodiments, the controller 109 further enables a fluid temperature adjustment device (e.g., a heater, a cooler, a condenser, etc.) to adjust the temperature of the heat transfer fluid (e.g., enabling the heater to heat the recycled heat transfer fluid to a temperature between approximately 200 and approximately 400 degrees Celsius).

In response to placing the substrate 160 on the substrate support assembly 100 and/or in response to actuating the substrate processing equipment, the controller 109 causes a flow rate adjustment device (e.g., a valve, a pump) to flow a gas (e.g., helium) through the gas channel, the internal volume 132, and through the aperture to the upper surface of the substrate support assembly 100 (e.g., below the substrate).

The controller controls the temperature of the substrate by controlling the resistive heater 122 and/or the heat transfer fluid in the channel 142 to heat the substrate during the idle state and cool the substrate during the active state. The controller 109 can control the substrate temperature within a range of plus or minus ten degrees Celsius (e.g., approximately 340 to approximately 360 degrees Celsius).

FIG2A through FIG2C illustrate components of a substrate support assembly (e.g., substrate support assembly 100 of FIG1 , susceptor body 110 of FIG1 ) according to certain embodiments. FIG2A illustrates a cross-sectional view of a heating plate 220 (e.g., heating plate 120 of FIG1 ), FIG2B illustrates a view (e.g., a bottom view) of a gas distribution plate 230 (e.g., gas distribution plate 100 of FIG1 ), and FIG2C illustrates a cross-sectional view of a cooling plate 240 (e.g., cooling plate 140 of FIG1 ). Features in FIG2A through FIG2C having similar element numbers as those in FIG1 may have similar or identical functions and/or structures as those in FIG1 .

Referring to FIG. 2A , the heating plate 220 has one or more resistive heaters 222. In some embodiments, a controller (e.g., controller 109 of FIG. 1 ) controls the resistive heaters 222 in a unified and/or individual manner based on temperature data from one or more sensors (e.g., thermocouples). The heating plate 220 has one or more apertures 224 (e.g., channels, openings) extending between the upper and lower surfaces of the heating plate 220. The apertures 224 are configured to allow gas (e.g., helium, argon, etc.) to flow from an interior volume 232 of a gas distribution plate 230 to a location between the substrate and the upper surface of the substrate support assembly.

2B , the lower surface of the gas distribution plate 230 may define one or more internal volumes 232 for receiving a gas (e.g., helium, argon, etc.). The upper surface (e.g., a flat upper surface) of the gas distribution plate 230 may be secured (e.g., bonded) to the lower surface (e.g., a flat lower surface) of the heating plate 220. At least a portion of the lower surface of the gas distribution plate 230 may be secured (e.g., fastened) to the upper surface (e.g., a flat upper surface) of the cooling plate 240. In some embodiments, the upper surface of the cooling plate 240 and the lower surface of the gas distribution plate 230 enclose the internal volumes 232 (e.g., the gas distribution plate 230 provides the upper surface of the internal volumes 232, and the cooling plate 240 provides the lower surface of the internal volumes 232).

One or more adapters (e.g., gas swirl inlets) can be configured to couple the internal volume 232 to a gas passage of a susceptor shaft (e.g., susceptor shaft 170 of FIG. 1 ). The internal volume 232 aligns with the hole 224 in the susceptor body to provide gas to a location below the substrate.

In some embodiments, the gas distribution plate 230 includes an upper structure 234, a peripheral structure 236, an inner structure 238, and one or more support structures 239. The upper structure 234, the peripheral structure 236, the inner structure 238, and the support structures 239 can be a single, continuous component (e.g., formed by molding and/or by removing material). The upper structure 234 can have a flat upper surface (e.g., configured to be secured to the bottom surface of the heater plate 220) and can have a bottom surface coupled to (e.g., integral with, joined to) the peripheral structure 236, the inner structure 238, and the support structures 239. The inner structure 238 can be coupled to a gas channel in the susceptor shaft and can provide gas to the internal volume 232. The interior volume 232 can be sealed from the environment by the upper structure 234 at the top, the peripheral structure 236 at the sides, the internal structure 238 in the middle, and the upper surface of the cooling plate 240 at the bottom. A support structure 239 can extend partially between the peripheral structure 236 and the internal structure 238. The peripheral structure 236, the internal structure 238, and/or one or more support structures 239 can extend from the upper structure 234 to the upper surface of the cooling plate 240 (e.g., in response to the gas distribution plate 230 being coupled to the cooling plate 240). The support structure 239 prevents deformation of the gas distribution plate 230 (e.g., preventing changes in the height of the interior volume 232).

The gas distribution plate 230 is configured to distribute gas to provide substantially uniform gas pressure between the electrostatic chuck and the substrate (e.g., gas pressure at different locations is within +/- 10%, +/- 5%, and/or the like).

The solid area (e.g., the area of the peripheral structure 236, the inner structure 238, and the support structure 239) of the gas distribution plate (e.g., the upper structure 234) may account for up to 10% or up to 5% of the total area.

For example, as shown in FIG. 2C , the cooling plate 240 defines one or more channels 242 that receive a heat transfer fluid to cool a susceptor body (e.g., the susceptor body 110 of FIG. 1 ) and a substrate disposed thereon during an active state of the processing chamber.

FIG3A through FIG3C illustrate components of a substrate support assembly (e.g., substrate support assembly 100 of FIG1 ) according to certain embodiments. FIG3A is a side view of a pedestal shaft 370 (e.g., pedestal shaft 170 of FIG1 ), FIG3B is a bottom view of pedestal shaft 370 , and FIG4C is a side view of substrate support assembly 300 without pedestal shaft 370 . Features with similar reference numerals to features in other figures may have the same or similar structure and/or functionality.

The base shaft 370 includes an elongated lower portion and a flanged upper portion. The flanged upper portion is configured to be secured (e.g., snapped) to a cooling plate (e.g., cooling plate 240 in FIG. 2C or cooling plate 140 in FIG. 1 ). A gas distribution plate 330 (e.g., gas distribution plate 230 in FIG. 2B or gas distribution plate 130 in FIG. 1 ) is placed on the cooling plate 340, and a heating plate 320 (e.g., heating plate 220 in FIG. 2A or heating plate 120 in FIG. 1 ) is placed on the gas distribution plate 330. An electrostatic chuck 350 (e.g., electrostatic chuck 150 in FIG. 1 ) may be placed on the heating plate 320.

The supply channel 372, the return channel 374, and the gas channel 376 are disposed in the base shaft 370. In some embodiments, the supply channel 372, the return channel 374, and the gas channel 376 are formed by pipes routed through the base shaft 370.

FIG. 4 illustrates a method 400 for using a substrate support assembly according to certain embodiments. In some embodiments, a controller (e.g., controller 109 of FIG. 1 ) performs one or more of the operations of method 400 . Although shown in a particular order or sequence, the order of the processes may be modified unless otherwise noted. Thus, the illustrated embodiments should be understood as examples only; the illustrated processes may be performed in a different order, and some processes may be performed in parallel. Furthermore, one or more processes may be omitted in various embodiments. Thus, not all processes are required for every embodiment.

Referring to method 400 in FIG. 4 , at block 402 , a gas (e.g., helium, argon, etc.) is caused to flow through a gas channel in the susceptor shaft, through the internal volume of the gas distribution plate, through the cooling plate and holes in the electrostatic chuck to a location below the substrate. A controller may provide the gas flow via a flow rate regulating device (e.g., a pump, a valve, etc.). The gas provides pressure on the lower surface of the substrate. In some embodiments, the peripheral portion of the substrate is substantially sealed from the susceptor body so that the gas is substantially sealed under the substrate. The controller may provide the gas flow based on sensor data (e.g., pressure sensor data, flow rate data, etc.). The controller may cause the gas pressure under the substrate to be less than a test pressure of the susceptor body (e.g., electrostatic chuck pressure).

In some embodiments, at block 404, sensor data associated with a substrate disposed on a substrate support assembly is received. In some embodiments, the sensor data is associated with the temperature of the substrate and/or susceptor body. The controller may receive the sensor data from a temperature sensor, such as a thermocouple.

At block 406, a determination is made that the processing chamber is in an idle state (e.g., based on sensor data). In some embodiments, the controller may determine that the processing chamber is in an idle state (e.g., not performing substrate processing operations) in response to determining that the temperature of the substrate and/or susceptor body has reached a first threshold temperature (e.g., approximately 350 degrees Celsius or less). In some embodiments, the controller receives data indicating that the processing chamber is not performing substrate processing operations. In some embodiments, the controller controls the processing chamber.

At block 408, in response to the processing chamber being in an idle state, a resistive heater disposed in the heater plate heats the heater plate (e.g., to heat a substrate disposed on a susceptor body). During the idle state, the resistive heater causes the heater plate to have a temperature (e.g., approximately 350 degrees Celsius) that is lower than a substrate processing operating temperature (e.g., between approximately 350 and 400 degrees Celsius) to heat the substrate to a temperature (e.g., approximately 350 degrees Celsius) that is closer to the substrate processing operating temperature than room temperature and maintains the substrate at that temperature.

In some embodiments, the susceptor body may be heated (e.g., via a resistive heater) to a temperature between about 300°C and about 400°C (e.g., about 350°C) before the substrate is placed on the susceptor body. In response to placing the substrate on the susceptor body, the substrate is heated to a temperature between about 300°C and about 400°C (e.g., about 350°C) (e.g., via heat conduction from the susceptor body).

At block 410, a determination is made that the processing chamber is active (e.g., based on sensor data). The controller may determine that the processing chamber is active based on sensor data related to the temperature of the substrate and/or susceptor body. The controller may receive data indicating that the processing chamber is performing a substrate processing operation. The controller may have data indicating when the processing chamber is performing a substrate processing operation. The controller may cause the processing chamber to perform a substrate processing operation.

At block 412, in response to the processing chamber being active, the resistive heaters are prevented from heating the heater plate. In some embodiments, the heater plate includes multiple resistive heaters (e.g., forming hot zones). The controller may cause certain resistive heaters to heat to a certain temperature (e.g., at a certain voltage) and may prevent certain resistive heaters from heating the heater plate based on sensor data associated with different locations on the susceptor body.

At block 414, in response to the processing chamber being active, a heat transfer fluid is flowed through channels formed in the susceptor body (e.g., channels formed in a cooling plate) to cool the substrate. The controller may adjust the temperature (e.g., cool) of the heat transfer fluid flowing through the channels in the susceptor body via a fluid temperature adjustment device (e.g., a cooler, a condenser) to cool the substrate. The controller may flow the heat transfer fluid (e.g., at a rate of approximately 70 liters per minute) through the susceptor body via a flow rate adjustment device (e.g., a pump, a recirculation pump, and/or a valve) to cool the susceptor body to a temperature between approximately 300 and approximately 400 degrees Celsius (e.g., approximately 350 degrees Celsius). The controller may flow the heat transfer fluid at a lower temperature (e.g., approximately 300 to approximately 350 degrees Celsius) through the susceptor body. The heat transfer fluid may absorb additional heat from substrate processing operations to maintain the substrate (e.g., and susceptor body) at a threshold temperature (e.g., plus or minus 10 degrees Celsius) of the idle temperature of the substrate on the susceptor body (e.g., approximately 350 degrees Celsius).

In some embodiments, the controller causes the heat transfer fluid to flow through the channels during an active state and an idle state of the processing chamber.

In some embodiments, each of the operations of method 400 is performed while maintaining a sealed environment within a processing chamber. In some embodiments, the predetermined temperatures of the heat transfer fluid, susceptor body, and/or substrate are adjusted based on the temperature of the substrate processing operation. In some embodiments, for each predetermined temperature of the heat transfer fluid, susceptor body, and/or substrate associated with a corresponding substrate processing operation, the temperature of the heat transfer fluid, susceptor body, and/or substrate is maintained at a threshold temperature (e.g., plus or minus 10 degrees Celsius) before, during, and after the corresponding substrate processing operation.

Unless otherwise specifically stated, terms such as "cause," "determine," "heat," "cool," "flow," "receive," "transmit," "generate," or similar terms refer to actions or processes performed or implemented by computer systems that manipulate data represented as physical (electronic) quantities in computer system registers and memories and transform them into data similarly represented as physical quantities in computer system memories or registers or other such information storage, transmission, or display devices. Furthermore, the terms "first," "second," "third," "fourth," etc., used herein are used as labels to distinguish different elements and do not have a sequential meaning associated with their numerical numbers.

The examples described herein also relate to apparatus for performing the methods described herein. In some embodiments, such apparatus is specifically constructed for performing the methods described herein, or such apparatus comprises a general-purpose computer system selectively programmed by a computer program stored in the computer system. In some embodiments, such a computer program is stored in a computer-readable tangible storage medium.

The methods and illustrative examples described herein are not inherently related to any particular computer or other apparatus. Various general-purpose systems may be used in accordance with the teachings described herein, or more specialized apparatuses may be constructed to perform the methods described herein and/or their individual functions, routines, subroutines, or operations. The above description illustrates examples of structures for a variety of such systems.

The preceding description sets forth numerous specific details, such as examples of specific systems, components, methods, and the like, to facilitate a good understanding of several embodiments of the present disclosure. However, it will be apparent to those skilled in the art that at least some embodiments of the present disclosure may be practiced without these specific details. In other cases, known components or methods are not described in detail, but are omitted using a simple block diagram format to avoid unnecessarily obscuring the present disclosure. Thus, the specific details set forth are merely illustrative. Specific implementations may differ from these illustrative details and remain within the scope of the present disclosure.

As used herein, the terms "over," "under," "between," "disposed on," "supported by," and "upper" refer to the relative position of a material layer or component with respect to other layers or components. For example, a layer disposed over, above, or below a layer may be in direct contact with the other layer or may have one or more intervening layers. Additionally, a layer disposed between two layers may be in direct contact with the two layers or may have one or more intervening layers. Similarly, unless expressly stated otherwise, a feature disposed between two features may be in direct contact with the adjacent feature or may have one or more intervening layers.

Reference throughout this specification to "one embodiment" or "an embodiment" means that at least one embodiment includes the particular features, structures, or characteristics described in connection with the embodiment. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" throughout this specification do not necessarily refer to the same embodiment of the disclosure. Additionally, the term "or" is intended to include an inclusive or rather than an exclusive or. When the terms "about" or "approximately" are used herein, this means that the accuracy of the stated nominal value is within ±10%.

Although the operations of the methods herein are shown and described in a particular order, the order of the operations of each method may be altered such that certain operations are performed in reverse order, certain operations are performed at least partially concurrently with other operations, or in another embodiment, instructions or sub-operations of different operations are performed in an intermittent and/or alternating manner.

It should be understood that the above description is intended to be illustrative and not limiting. Many other embodiments will become apparent to those skilled in the art upon reading and understanding the above description. The scope of this disclosure should therefore be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

100: Substrate support assembly 109: Controller 110: Base body 120: Heating plate 122: Resistive heater 130: Gas distribution plate 132: Internal volume 140: Cooling plate 142: Passageway 150: Electrostatic chuck 160: Substrate 170: Base shaft 220: Heating plate 222: Resistive heater 224: Orifice 230: Gas distribution plate 232: Internal volume 234: Upper structure 236: Peripheral structure 238: Internal structure 239: Support structure 240: Cooling plate 242: Passageway 300: Substrate support assembly 320: Heating plate 330: Gas distribution plate 340: Cooling plate 350: Electrostatic chuck 370: Base shaft 372: Supply channel 374: Return channel 376: Gas channel 400: Method 402: Block 404: Block 406: Block 408: Block 410: Block 412: Block 414: Block

The present disclosure is illustrated by way of examples and is not limited by the accompanying drawings, in which like reference numerals indicate similar elements. It should be noted that different references to "an" or "one" embodiment in this disclosure are not necessarily to the same embodiment, and such references mean at least one.

FIG. 1 illustrates a substrate support assembly according to some embodiments.

2A-2C illustrate components of a substrate support assembly according to certain embodiments.

3A-3C illustrate components of a substrate support assembly according to certain embodiments.

FIG. 4 illustrates a method of using a substrate support assembly according to some embodiments.

Domestic Storage Information (Please enter in order by institution, date, and number) None International Storage Information (Please enter in order by country, institution, date, and number) None

100: Substrate support assembly 109: Controller 110: Base body 120: Heating plate 122: Resistive heater 130: Gas distribution plate 132: Internal volume 140: Cooling plate 142: Channel 150: Electrostatic chuck 160: Substrate 170: Base shaft

Claims (18)

A substrate support assembly includes: a cooling plate forming one or more channels configured to receive a heat transfer fluid; a gas distribution plate disposed on the cooling plate, wherein the gas distribution plate forms an internal volume configured to receive a gas; a heating plate disposed on the gas distribution plate, wherein the heating plate includes a resistive heater; and an electrostatic chuck disposed on the heated plate, wherein the electrostatic chuck is configured to support a substrate in a processing chamber, wherein the resistive heater heats the substrate support assembly to a temperature between about 300 degrees Celsius and about 400 degrees Celsius during an idle state of the processing chamber, and wherein the heat transfer fluid cools the substrate support assembly to a temperature between about 300 degrees Celsius and about 400 degrees Celsius during an active state of the processing chamber. The substrate support assembly of claim 1 further comprising a shaft disposed beneath the cooling plate, wherein the gas is configured to flow through a gas channel in the shaft to the interior volume of the gas distribution plate, through an opening formed in the heating plate and the electrostatic chuck to a location between the substrate and the electrostatic chuck. The substrate support assembly of claim 1, wherein the heat transfer fluid can cool the substrate support assembly at a temperature of about 200 degrees Celsius to about 300 degrees Celsius. The substrate support assembly of claim 1, wherein the resistive heater is capable of heating the heating plate to a temperature of about 300 degrees Celsius to about 400 degrees Celsius. The substrate support assembly of claim 1, wherein the gas distribution plate is configured to distribute the gas to provide substantially uniform gas pressure between the electrostatic chuck and the substrate. The substrate support assembly of claim 1, wherein the electrostatic chuck comprises a coating, wherein corresponding coefficients of thermal expansion (CTE) of the cooling plate, the gas distribution plate, the heating plate, the electrostatic chuck, and the coating are within a threshold range of each other. The substrate support assembly of claim 1, wherein a ratio of the solid area of the gas distribution plate to the total area is up to about 10 percent. The substrate support assembly of claim 1, wherein the heat transfer fluid is capable of flowing through the one or more channels during an idle state of the processing chamber and during an active state of the processing chamber. The substrate support assembly of claim 1, wherein the substrate support assembly is fluidly coupled to a shut-off valve, wherein the shut-off valve is configured to be actuated to provide flow of the heat transfer fluid through the one or more channels during an active state of the processing chamber and to prevent the flow of the heat transfer fluid through the one or more channels during an idle state of the processing chamber. The substrate support assembly of claim 1, wherein the substrate support assembly maintains the substrate at a substantially constant temperature during an idle state of the processing chamber and during an active state of the processing chamber. The substrate support assembly of claim 1, wherein the gas distribution plate provides a temperature gradient of about 50 to about 200 degrees Celsius between the resistive heater and the heat transfer fluid. A substrate processing system includes: a substrate support assembly disposed in a processing chamber, the substrate support assembly including a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate; and a controller that: causes a heat transfer fluid to flow through one or more channels formed in the cooling plate; causes gas to flow through the gas distribution plate to openings formed in the heating plate, and then flows from the openings in the heating plate to the substrate support assembly. The invention relates to a method for controlling a processing chamber to heat a substrate disposed on the substrate support assembly and disposing the substrate support assembly at a position between an upper surface of the processing chamber and a substrate disposed on the substrate support assembly; causing a resistive heater disposed in the heating plate to heat the heating plate; determining whether the processing chamber is in an idle state or an active state; and in response to determining that the processing chamber is in the active state, preventing the resistive heater from heating the heating plate, and in response to determining that the processing chamber is in the idle state, causing the resistive heater to heat the heating plate. The system of claim 12, wherein the controller further causes the heat transfer fluid to flow through the one or more channels during an idle state of the processing chamber and during an active state of the processing chamber. The system of claim 12, further comprising a shut-off valve fluidly coupled to the substrate support assembly, wherein the controller further actuates the shut-off valve to provide flow of the heat transfer fluid through the one or more channels during an active state of the processing chamber and to prevent the flow of the heat transfer fluid through the one or more channels during an idle state of the processing chamber. A substrate processing method includes the following steps: flowing a heat transfer fluid through one or more channels formed in a cooling plate of a substrate support assembly; flowing the gas through a gas distribution plate of the substrate support assembly disposed on the cooling plate, through openings formed in a heating plate of the substrate support assembly disposed on the cooling plate, and to a position between an upper surface of the substrate support assembly and a substrate in a processing chamber on the substrate support assembly; and in response to the processing chamber being in an idle state, causing a resistive heater disposed in the heating plate to heat the heating plate. The method of claim 15, wherein the heat transfer fluid is caused to flow through the one or more channels in response to the processing chamber being in an active state. The method of claim 15, further comprising the step of preventing the resistive heater from heating the heater plate in response to the processing chamber being in an active state. The method of claim 15, further comprising the steps of: receiving temperature data from a sensor associated with the heater plate; and determining whether the processing chamber is in the idle state or an active state based on the temperature data.