TWI839910B - Acoustic coupler - Google Patents
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Abstract
Description
本發明係關於一種耦合器,尤指一種應用聲波傳遞之聲耦合器。 The present invention relates to a coupler, in particular to an acoustic coupler for sound wave transmission.
一般針對供電電壓差較大之不同元件間之訊號傳輸,需要使用耦合器(coupler)或隔離器(isolator)來保持電性隔絕並作為執行訊號傳輸媒介。目前常見之耦合器包括光耦合器(optocoupler)或電磁耦合器(digital coupler)。光耦合器利用發光二極體作為光源,並藉由相應之光敏元件來達到電-光-電之訊號轉換及傳輸。然而,發光二極體具有一定之使用年限,當超過使用年限後發光二極體容易出現老化等問題,進而影響其發光效率。此外,光電耦合器之切換頻率較低,需要加設額外電路才能勉強將切換頻率提高至10MBd(Mega-Baudrate),在使用上多有限制。 Generally, for signal transmission between different components with large power supply voltage differences, a coupler or isolator is required to maintain electrical isolation and serve as a signal transmission medium. Common couplers currently include optocouplers or digital couplers. Optocouplers use LEDs as light sources and use corresponding photosensitive elements to achieve electrical-optical-electrical signal conversion and transmission. However, LEDs have a certain service life. When the service life is exceeded, LEDs are prone to aging and other problems, which in turn affects their light-emitting efficiency. In addition, the switching frequency of optocouplers is relatively low, and additional circuits need to be added to barely increase the switching frequency to 10MBd (Mega-Baudrate), which has many limitations in use.
電磁耦合器是利用相鄰之不同電磁感應元件達到電-電磁波-電之訊號轉換及傳輸,且光電耦合器之切換頻率可應用至25MBd以上,功耗較低且不會出現類似前述發光二極體之老化問題。然而,電磁耦合器會因為使用電磁波而容易產生電磁干擾或被外部電磁訊號干擾等問題,進而造成使用上之困擾。 Electromagnetic couplers use different adjacent electromagnetic induction elements to achieve signal conversion and transmission from electric to electromagnetic waves to electric. The switching frequency of optocouplers can be applied to more than 25MBd, with lower power consumption and no aging problems similar to the aforementioned LEDs. However, electromagnetic couplers are prone to electromagnetic interference or interference from external electromagnetic signals due to the use of electromagnetic waves, which can cause trouble in use.
因此,如何設計出新的聲耦合器,改善習知耦合器容易出現之老化或電磁干擾等問題,實為一個值得研究之課題。 Therefore, how to design a new acoustic coupler to improve the aging or electromagnetic interference problems that are prone to occur in conventional couplers is indeed a topic worth studying.
本發明之目的在於提供一種應用聲波傳遞訊號之聲耦合器。 The purpose of the present invention is to provide an acoustic coupler for transmitting signals using sound waves.
為達上述目的,本發明之聲耦合器包括訊號調變單元、聲波發射單元、聲波接收單元、訊號解調單元及封裝結構。訊號調變單元,用以將一輸入訊號調變為一驅動訊號;聲波發射單元,電性連接該訊號調變單元,該聲波發射單元係依據該驅動訊號發射一聲波;聲波接收單元,用以接收該聲波以產生一感測訊號;訊號解調單元,電性連接該聲波接收單元,該訊號解調單元係將該感測訊號解調為一輸出訊號,且該輸出訊號與該輸入訊號具有相同相位之波形;以及封裝結構,至少覆蓋該聲波接收單元及該聲波發射單元,使得該聲波接收單元與該聲波發射單元之間至少藉由該封裝結構保持電性隔絕。其中自該聲波接收單元發射之該聲波係於該封裝結構內斜向傳遞,並經由該封裝結構及一頂部交界面反射後斜向傳遞至該聲波接收單元。 To achieve the above-mentioned purpose, the acoustic coupler of the present invention includes a signal modulation unit, an acoustic wave transmitting unit, an acoustic wave receiving unit, a signal demodulation unit and a packaging structure. A signal modulation unit, used for modulating an input signal into a driving signal; a sound wave transmitting unit, electrically connected to the signal modulation unit, the sound wave transmitting unit transmits a sound wave according to the driving signal; a sound wave receiving unit, used for receiving the sound wave to generate a sensing signal; a signal demodulation unit, electrically connected to the sound wave receiving unit, the signal demodulation unit demodulates the sensing signal into an output signal, and the output signal has a waveform with the same phase as the input signal; and a packaging structure, at least covering the sound wave receiving unit and the sound wave transmitting unit, so that the sound wave receiving unit and the sound wave transmitting unit are electrically isolated from each other at least by the packaging structure. The sound wave emitted from the sound wave receiving unit is transmitted obliquely in the packaging structure, and is reflected by the packaging structure and a top interface before being transmitted obliquely to the sound wave receiving unit.
在本發明之一實施例中,聲波發射單元及聲波接收單元係設置於同一水平面上。 In one embodiment of the present invention, the sound wave transmitting unit and the sound wave receiving unit are arranged on the same horizontal plane.
在本發明之一實施例中,水平面係實質上平行頂部交界面。 In one embodiment of the present invention, the horizontal plane is substantially parallel to the top interface.
在本發明之一實施例中,封裝結構係由可提供聲波傳遞特性之高分子化合物材料所構成。 In one embodiment of the present invention, the packaging structure is composed of a polymer compound material that can provide acoustic wave transmission properties.
在本發明之一實施例中,聲耦合器更包括一控制組件,電性連接該訊號解調單元,該控制組件係依據該輸出訊號執行一控制操作。 In one embodiment of the present invention, the acoustic coupler further includes a control component electrically connected to the signal demodulation unit, and the control component performs a control operation based on the output signal.
在本發明之一實施例中,控制組件為包括NMOS及PMOS之驅動器組件或BJT元件。 In one embodiment of the present invention, the control component is a driver component or a BJT element including NMOS and PMOS.
在本發明之一實施例中,聲耦合器更包括一晶片基板,該晶片基板包括一溝槽,其中該聲波接收單元與該聲波發射單元設置於該晶片基板上,且該溝槽位於該聲波接收單元與該聲波發射單元之間。 In one embodiment of the present invention, the acoustic coupler further includes a chip substrate, the chip substrate includes a groove, wherein the sound wave receiving unit and the sound wave emitting unit are arranged on the chip substrate, and the groove is located between the sound wave receiving unit and the sound wave emitting unit.
在本發明之一實施例中,溝槽之寬度介於10微米至100微米之間。 In one embodiment of the present invention, the width of the trench is between 10 microns and 100 microns.
在本發明之一實施例中,聲耦合器,更包括複數晶片基板,該聲波接收單元與該聲波發射單元係分別設置於該複數晶片基板之相鄰二晶片基板上。 In one embodiment of the present invention, the acoustic coupler further includes a plurality of chip substrates, and the acoustic wave receiving unit and the acoustic wave transmitting unit are respectively disposed on two adjacent chip substrates of the plurality of chip substrates.
在本發明之一實施例中,相鄰二晶片基板之間距介於100微米至500微米之間。 In one embodiment of the present invention, the distance between two adjacent chip substrates is between 100 microns and 500 microns.
在本發明之一實施例中,交界面至該聲波發射單元或該聲波接收單元之最短距離小於1mm。 In one embodiment of the present invention, the shortest distance from the interface to the sound wave emitting unit or the sound wave receiving unit is less than 1 mm.
在本發明之一實施例中,聲波發射單元包括至少一CMUT發射元件,該聲波接收單元包括至少一CMUT接收元件,且該至少一CMUT發射元件之數量對應該至少一CMUT接收元件之數量。 In one embodiment of the present invention, the sound wave transmitting unit includes at least one CMUT transmitting element, the sound wave receiving unit includes at least one CMUT receiving element, and the number of the at least one CMUT transmitting element corresponds to the number of the at least one CMUT receiving element.
在本發明之一實施例中,當該至少一CMUT發射元件為複數個時,該些CMUT發射元件形成一CMUT發射元件陣列;當該至少一CMUT接收元件為複數個時,該些CMUT接收元件形成一CMUT接收元件陣列。 In one embodiment of the present invention, when the at least one CMUT transmitting element is plural, the CMUT transmitting elements form a CMUT transmitting element array; when the at least one CMUT receiving element is plural, the CMUT receiving elements form a CMUT receiving element array.
據此,本發明之聲耦合器可藉由斜向聲波之反射有效傳遞訊號,並保持發射單元及接收單元之間電性隔絕,不會涉及光學元件或/及電磁感應元件之使用,避免產生光學元件老化或電磁干擾等問題。此外,本發明之聲耦合器可整合在同一晶片上,藉以縮減晶片面積、簡化製程且降低成本,並能提升訊號切換頻率。 Accordingly, the acoustic coupler of the present invention can effectively transmit signals through the reflection of oblique sound waves, and maintain electrical isolation between the transmitting unit and the receiving unit, without involving the use of optical components and/or electromagnetic induction components, thus avoiding problems such as aging of optical components or electromagnetic interference. In addition, the acoustic coupler of the present invention can be integrated on the same chip to reduce the chip area, simplify the process and reduce costs, and can increase the signal switching frequency.
1、1a、1b、1c、1d、1e、1f:聲耦合器 1, 1a, 1b, 1c, 1d, 1e, 1f: Acoustic coupler
10:訊號調變單元 10:Signal modulation unit
20:聲波發射單元 20: Sound wave transmitting unit
30:聲波接收單元 30: Sound wave receiving unit
40:訊號解調單元 40:Signal demodulation unit
41:跨阻放大器 41: Transimpedance amplifier
42:波峰偵測電路 42: Peak detection circuit
50:封裝結構 50:Packaging structure
51:頂部交界面 51: Top interface
60、60a、60b:控制組件 60, 60a, 60b: Control components
70、701、702、703、704:晶片基板 70, 701, 702, 703, 704: chip substrate
80:隔絕層 80: Isolation layer
200:CMUT發射/接收元件 200: CMUT transmitting/receiving element
210:介電層 210: Dielectric layer
220:底部電極 220: Bottom electrode
230:頂部電極 230: Top electrode
240:空氣間隙 240: Air gap
IN:訊號輸入接腳 IN: signal input pin
OUT:訊號輸出接腳 OUT: signal output pin
GND:接地接腳 GND: ground pin
Vps:外部供電接腳 V ps : External power supply pin
Vin:輸入訊號 V in : input signal
Vout:輸出訊號 V out : output signal
圖1A為本發明之聲耦合器之電路方塊圖。 Figure 1A is a circuit block diagram of the acoustic coupler of the present invention.
圖1B為本發明之聲耦合器之概略示意圖。 Figure 1B is a schematic diagram of the acoustic coupler of the present invention.
圖2A為本發明之聲耦合器之第一實施例之示意圖。 FIG2A is a schematic diagram of the first embodiment of the acoustic coupler of the present invention.
圖2B為應用本發明之聲耦合器之第一實施例所傳遞之訊號示意圖。 FIG2B is a schematic diagram of the signal transmitted by the first embodiment of the acoustic coupler of the present invention.
圖3為本發明之聲耦合器之第二實施例之示意圖。 Figure 3 is a schematic diagram of the second embodiment of the acoustic coupler of the present invention.
圖4為本發明之聲耦合器之第三實施例之示意圖。 Figure 4 is a schematic diagram of the third embodiment of the acoustic coupler of the present invention.
圖5為本發明之聲耦合器之第四實施例之示意圖。 Figure 5 is a schematic diagram of the fourth embodiment of the acoustic coupler of the present invention.
圖6為本發明之聲耦合器之第五實施例之示意圖。 FIG6 is a schematic diagram of the fifth embodiment of the acoustic coupler of the present invention.
圖7為本發明之聲耦合器之第六實施例之示意圖。 FIG7 is a schematic diagram of the sixth embodiment of the acoustic coupler of the present invention.
圖8為本發明之聲耦合器之第七實施例之示意圖。 FIG8 is a schematic diagram of the seventh embodiment of the acoustic coupler of the present invention.
圖9A為本發明之聲耦合器所使用之單一CMUT發射/接收元件之示意圖。 FIG9A is a schematic diagram of a single CMUT transmitting/receiving element used in the acoustic coupler of the present invention.
圖9B為本發明之聲耦合器所使用之複數CMUT發射/接收元件之示意圖。 FIG9B is a schematic diagram of the multiple CMUT transmitting/receiving elements used in the acoustic coupler of the present invention.
由於各種態樣與實施例僅為例示性且非限制性,故在閱讀本說明書後,具有通常知識者在不偏離本發明之範疇下,亦可能有其他態樣與實施例。根據下述之詳細說明與申請專利範圍,將可使該等實施例之特徵及優點更加彰顯。 Since the various aspects and embodiments are only illustrative and non-restrictive, after reading this specification, a person with ordinary knowledge may also have other aspects and embodiments without departing from the scope of the invention. The features and advantages of these embodiments will be more prominent according to the following detailed description and patent application scope.
於本文中,係使用「一」或「一個」來描述本文所述的元件和組件。此舉只是為了方便說明,並且對本發明之範疇提供一般性的意義。因此, 除非很明顯地另指他意,否則此種描述應理解為包括一個或至少一個,且單數也同時包括複數。 In this document, "a" or "an" is used to describe the elements and components described herein. This is only for the convenience of explanation and to provide a general meaning to the scope of the present invention. Therefore, unless it is obvious that it is otherwise intended, such description should be understood to include one or at least one, and the singular also includes the plural.
於本文中,用語「第一」或「第二」等類似序數詞主要是用以區分或指涉相同或類似的元件或結構,且不必然隱含此等元件或結構在空間或時間上的順序。應了解的是,在某些情形或組態下,序數詞可以交換使用而不影響本創作之實施。 In this article, the terms "first" or "second" and similar ordinal numbers are mainly used to distinguish or refer to the same or similar elements or structures, and do not necessarily imply the spatial or temporal order of these elements or structures. It should be understood that in certain situations or configurations, ordinal numbers can be used interchangeably without affecting the implementation of this creation.
於本文中,用語「包括」、「具有」或其他任何類似用語意欲涵蓋非排他性之包括物。舉例而言,含有複數要件的元件或結構不僅限於本文所列出之此等要件而已,而是可以包括未明確列出但卻是該元件或結構通常固有之其他要件。 As used herein, the terms "include", "have" or any other similar terms are intended to cover a non-exclusive inclusion. For example, an element or structure containing multiple elements is not limited to those elements listed herein, but may include other elements that are not expressly listed but are generally inherent to the element or structure.
請一併參考圖1A及圖1B,其中圖1A為本發明之聲耦合器之電路方塊圖,圖1B為本發明之聲耦合器之概略示意圖。如圖1A及圖1B所示,本發明之聲耦合器1主要包括訊號調變單元10、聲波發射單元20、聲波接收單元30、訊號解調單元40及封裝結構50。訊號調變單元10由調幅電路(Amplitude Modulation Circuit)所構成,且訊號調變單元10可設置訊號輸入接點IN、接地接點GND及外部供電接點Vps。訊號調變單元10用以接收輸入訊號Vin,並將輸入訊號Vin調變為驅動訊號。
Please refer to FIG. 1A and FIG. 1B , wherein FIG. 1A is a circuit block diagram of the acoustic coupler of the present invention, and FIG. 1B is a schematic diagram of the acoustic coupler of the present invention. As shown in FIG. 1A and FIG. 1B , the
聲波發射單元20電性連接訊號調變單元10。聲波發射單元20用以接收來自訊號調變單元10之驅動訊號,並依據該驅動訊號發射聲波。在本發明中,聲波發射單元20包括至少一CMUT(即電容微機電超聲波換能器,Capacitive Micromachined Ultrasonic Transducer,簡稱CMUT)發射元件,且至少一CMUT發射元件之設置數量係依據設計需求不同而改變。
The sound
聲波接收單元30用以接收聲波發射單元20所發射之聲波,並依據該聲波以產生感測訊號。聲波接收單元30包括至少一CMUT接收元件,且至少一CMUT發射元件之設置數量對應至少一CMUT接收元件之設置數量。在設計上,聲波接收單元30與聲波發射單元20之間需要保持電性隔絕(如圖1A中虛線部分所隔出之區域,可利用結構設計或/及材料達到電性隔絕效果);此外,聲波發射單元20及聲波接收單元30係設置於同一水平面上,且二者均保持沿水平面方向設置,但本發明不以此為限,例如聲波發射單元20及聲波接收單元30可各自保持沿水平面方向設置,但聲波發射單元20及聲波接收單元30之間可具有高低差。
The sound
訊號解調單元40電性連接聲波接收單元30。訊號解調單元40由訊號解調電路(Signal Demodulation Circuit)所構成,且訊號解調單元40可設置訊號輸出接點OUT、接地接點GND及外部供電接點Vps。訊號解調單元40用以接收來自聲波接收單元30之感測訊號,並依據該感測訊號解調為輸出訊號Vout。
The
封裝結構50至少覆蓋聲波接收單元30及聲波發射單元20,使得聲波接收單元30與聲波發射單元20之間至少藉由封裝結構50保持電性隔絕,且聲波可以藉由封裝結構50傳遞。當然,於不同實施例中,經封裝製程後,封裝結構50更可覆蓋聲耦合器1之其他電性元件或結構,使得本發明之聲耦合器1可藉由封裝結構50結合前述各單元及其他電性元件或結構以形成一整合結構件,並達到本發明之聲耦合器1之整體封裝效果。此外,封裝結構50係由可提供聲波傳遞特性之高分子化合物材料所構成,例如環氧樹脂(Expoy),但封裝結構50也可採用其他高分子化合物材料來取代。
The
在封裝結構50成形後,封裝結構50會形成複數交界面,複數交界面至少包括頂部交界面51,用以提供聲波之反射效果。在本發明之一實施例中,封裝結構50之頂部交界面51係實質上平行供設置聲波發射單元20及聲波接收單元30之前述水平面,以利於聲波之反射。據此,當本發明之聲耦合器1完成封裝製程後,即可應用封裝結構50同時提供元件封裝及聲波傳遞效果,減少製程步驟並降低製造成本。此外,在本發明之一實施例中,前述頂部交界面51至聲波發射單元20或聲波接收單元30之最短距離(即垂直距離)係小於1mm,但本發明不以此為限。
After the
以下將針對本發明之聲耦合器之實際應用例及作動方式作進一步說明。請一併參考圖2A及圖2B,其中圖2A為本發明之聲耦合器之第一實施例之示意圖,圖2B為應用本發明之聲耦合器之第一實施例所傳遞之訊號示意圖。如圖2A及圖2B所示,在本實施例中,本發明之聲耦合器1藉由訊號調變單元10接收輸入訊號Vin以及振盪器訊號Vosc,其中輸入訊號Vin為具有自DC至20MHz之頻譜之方波訊號,而振盪器訊號Vosc具有自10MHz至50MHz之頻率。經由訊號調變單元10將輸入訊號Vin及振盪器訊號Vosc調變為驅動訊號Vac,並將驅動訊號Vac傳送至聲波發射單元20。聲波發射單元20接收到驅動訊號Vac後,即可依據驅動訊號Vac發射對應之聲波。該聲波之一部分自聲波發射單元20經由封裝結構50內斜向傳遞後,會接觸到封裝結構50及頂部交界面51,再經過反射後斜向傳遞至聲波接收單元30。
The following will further explain the actual application examples and operation methods of the acoustic coupler of the present invention. Please refer to Figures 2A and 2B, wherein Figure 2A is a schematic diagram of the first embodiment of the acoustic coupler of the present invention, and Figure 2B is a schematic diagram of the signal transmitted by the first embodiment of the acoustic coupler of the present invention. As shown in Figures 2A and 2B, in this embodiment, the
聲波接收單元30接收到聲波後,即可依據該聲波以產生感測訊號Is,其中感測訊號Is為自50nA至1000nA之電流訊號,且感測訊號Is相對於驅動訊號Vac會多出一段訊號傳遞之時間差Δt。訊號解調單元40可包括跨阻放大器
(TIA,transimpedance amplifier)41及波峰偵測(PD,peak detection)電路42。感測訊號Is會先傳送至跨阻放大器41以轉換為接收訊號Vrx,其中跨阻放大器41依設計可具有1k~1M Ohm之阻值;接著經轉換後之接收訊號Vrx會傳送至波峰偵測電路42,波峰偵測電路42會依據接收訊號Vrx之波形包絡(envelope)進行訊號還原以產生輸出訊號Vout。
After receiving the sound wave, the sound
由此可知,藉由本發明之聲耦合器1可將所接收之輸入訊號Vin轉換為輸出訊號Vout,且輸入訊號Vin與輸出訊號Vout具有相同相位之波形。在本發明中,輸入訊號Vin可為自高電壓區取得之電壓訊號,而輸出訊號Vout可為供應至低電壓區之電壓訊號,但本發明不以此為限,例如Vin可為自低壓區取得之電壓訊號,而Vout可為自高壓區取得之電壓訊號。因此,應用本發明之聲耦合器1可藉由聲波傳遞而有效達到高電壓區與低電壓區之間之訊號傳輸效果。
It can be seen that the
請參考圖3為本發明之聲耦合器之第二實施例之示意圖。本實施例為前述第一實施例之應用變化例,如圖3所示,在本實施例中,本發明之聲耦合器1a更包括控制組件60a。控制組件60a電性連接訊號解調單元40,使得來自訊號解調單元40之輸出訊號Vout可藉由電阻R產生相應電流至控制組件60a,並且控制組件60a可依據該電流執行相應之控制操作。在本實施例中,控制組件60a為BJT(即雙極性接面電晶體,Bipolar Junction Transistor,簡稱BJT)元件。BJT元件可連接外部負載,並作為該外部負載之開關(power switch)。據此,輸出訊號Vout之產生與否將會導致控制組件60a對應執行電路導通或切斷操作,以藉由控制組件60a達到所需之開關功能。
Please refer to FIG3 for a schematic diagram of the second embodiment of the acoustic coupler of the present invention. This embodiment is an application variation of the aforementioned first embodiment. As shown in FIG3 , in this embodiment, the acoustic coupler 1a of the present invention further includes a
請參考圖4為本發明之聲耦合器之第三實施例之示意圖。本實施例為前述第一實施例之應用變化例,如圖4所示,在本實施例中,本發明之聲耦
合器1b之控制組件60b為包括NMOS(即N型金屬氧化半導體,N-Metal-Oxide-Semiconductor,簡稱NMOS)及PMOS(即P型金屬氧化半導體,P-Metal-Oxide-Semiconductor,簡稱NMOS)之驅動器組件。前述驅動器組件可連接外部裝置,並作為該外部裝置之閘極驅動器(gate driver)。據此,輸出訊號Vout之產生與否將會導致控制組件60b對應執行電路切換操作,以藉由控制組件60b達到所需之閘極驅動功能。
Please refer to FIG4 for a schematic diagram of the third embodiment of the acoustic coupler of the present invention. This embodiment is an application variation of the aforementioned first embodiment. As shown in FIG4 , in this embodiment, the
以下將針對本發明之聲耦合器之細部結構及電路配置作進一步說明。請參考圖5為本發明之聲耦合器之第四實施例之示意圖。如圖5所示,在本實施例中,本發明之聲耦合器1c更包括單一個晶片基板70。晶片基板70主要作為可供設置其他電路元件或/及材料層之基礎元件。晶片基板70主要採用非摻雜或低摻雜之矽基板。訊號調變單元10及訊號解調單元40可設置於晶片基板70內,並且訊號調變單元10及訊號解調單元40可各自搭配對應之PMIC(即電源管理積體電路,Power Management Integrated Circuit,簡稱PMIC),以藉由PMIC提供前述單元所需之電壓(例如Vdc)。晶片基板70可包括溝槽71,藉由溝槽71之設置配合晶片基板70本身非摻雜或低摻雜之材料特性,使得晶片基板70被溝槽71隔開之兩部分盡可能形成電性隔絕。在本實施例中,溝槽71之寬度介於10微米至100微米之間,但本發明不以此為限。
The detailed structure and circuit configuration of the acoustic coupler of the present invention will be further described below. Please refer to FIG5 which is a schematic diagram of the fourth embodiment of the acoustic coupler of the present invention. As shown in FIG5, in this embodiment, the
隔絕層80形成於晶片基板70上,且隔絕層80均勻覆蓋整個晶片基板70一側之表面,以提供晶片基板70本身與設置於晶片基板70上之其他元件之電性隔絕效果。在本實施例中,隔絕層80可採用SiO2或Si3N4所組成,但本發明不以此為限。前述晶片基板70及隔絕層80可以藉由積體電路製程形成所需之電路元件或/及結構。此外,於製程中可將前述設置於晶片基板70內之訊號調變單
元10、訊號解調單元40及PMIC之該些接點外露於隔絕層80,以利於將該些接點與相應之元件或電源電性連接。
The
在本實施例中,聲波接收單元30及聲波發射單元20實質上水平地設置於相同之晶片基板70上,且聲波接收單元30與聲波發射單元20設置於同一水平面上。聲波接收單元30及聲波發射單元20各別藉由隔絕層80與晶片基板70電性隔絕,且溝槽71位於聲波接收單元30與聲波發射單元20之間。由於聲波接收單元30及聲波發射單元20均由對應之CMUT元件構成,使得聲波接收單元30及聲波發射單元20可以藉由CMUT製程形成所需之電路或/及結構,但本發明不以此為限。
In this embodiment, the sound
在本實施例中,藉由封裝製程可將封裝材料覆蓋整個晶片基板70及設置於其上之聲波接收單元30及聲波發射單元20,並填滿晶片基板70之溝槽71,以形成整體之封裝結構50。因此,聲波接收單元30及聲波發射單元20之間可藉由封裝結構50及晶片基板70保持電性隔絕,且聲波可以藉由封裝結構50傳遞。據此,本發明之聲耦合器1c之各部件可整合於單一晶片基板70上,進而形成單一晶片結構,簡化製程之複雜度。
In this embodiment, the packaging material can cover the
以下將藉由複數晶片基板之使用來說明本發明之聲耦合器之其他實施例,而複數晶片基板之數量視晶片尺寸需求而定。請參考圖6為本發明之聲耦合器之第五實施例之示意圖。本實施例為前述第四實施例之結構變化例,如圖6所示,在本實施例中,本發明之聲耦合器1d包括二個晶片基板701、702,且二個晶片基板701、702相鄰且間隔地設置。在本發明之一實施例中,相鄰二晶片基板701、701之間距介於100微米至500微米之間,但本發明不以此為限。該些晶片基板701、702所採用之材料及結構設計類似前述第四實施例,差別在
於晶片基板701主要設置聲波發射單元20、訊號調變單元10及其相應PMIC以形成獨立晶片結構,而另一晶片基板702主要設置聲波接收單元30、訊號解調單元40及其相應PMIC以形成另一獨立晶片結構。藉由封裝製程形成封裝結構50後,聲波接收單元30及聲波發射單元20之間可完全藉由封裝結構50保持電性隔絕,且聲波可以藉由封裝結構50傳遞。據此,本發明之聲耦合器1d可將聲波發射功能與聲波接收功能作有效隔絕,更能降低因基板材料電性隔絕效果不佳而造成訊號傳輸之不良影響。
The following will illustrate other embodiments of the acoustic coupler of the present invention by using a plurality of chip substrates, and the number of the plurality of chip substrates depends on the chip size requirements. Please refer to FIG6 for a schematic diagram of the fifth embodiment of the acoustic coupler of the present invention. This embodiment is a structural variation of the aforementioned fourth embodiment. As shown in FIG6 , in this embodiment, the acoustic coupler 1d of the present invention includes two
請參考圖7為本發明之聲耦合器之第六實施例之示意圖。本實施例為前述第四實施例之結構變化例,如圖7所示,在本實施例中,本發明之聲耦合器1e包括三個晶片基板701、702、703,且三個晶片基板701、702、703兩兩相鄰且間隔地設置。該些晶片基板701、702、703所採用之材料及結構設計類似前述第四實施例,差別在於晶片基板701主要設置訊號調變單元10及其相應PMIC以形成一獨立調變晶片結構,晶片基板702主要設置聲波發射單元20及聲波接收單元30以形成一獨立聲耦合晶片結構,而晶片基板703主要設置訊號解調單元40及其相應PMIC以形成又一獨立解調晶片結構。晶片基板702藉由溝槽71隔開為兩部分以供分別設置聲波發射單元20及聲波接收單元30,並保持電性隔絕。其中前述獨立調變晶片結構可以藉由任意CMOS積體電路製程製造而成,前述獨立聲耦合晶片結構可以藉由任意矽感測器晶片製程製造而成,而前述獨立解調晶片結構可以藉由任意CMOS製程或BCD積體電路製程製造而成。據此,本發明之聲耦合器1e可針對不同晶片選用最適合之製程技術予以製造,以降低晶片製程整合之困難度,並能提高相鄰二單元之電性隔絕效果。
Please refer to FIG. 7 for a schematic diagram of the sixth embodiment of the acoustic coupler of the present invention. This embodiment is a structural variation of the aforementioned fourth embodiment. As shown in FIG. 7 , in this embodiment, the acoustic coupler 1e of the present invention includes three
請參考圖8為本發明之聲耦合器之第七實施例之示意圖。本實施例為結合前述第五實施例及第六實施例之結構變化例,如圖8所示,在本實施例中,本發明之聲耦合器1f包括四個晶片基板701、702、703、704,且四個晶片基板701、702、703、704兩兩相鄰且間隔地設置。該些晶片基板701、702、703、704所採用之材料及結構設計類似前述第四實施例,差別在於晶片基板701主要設置訊號調變單元10及其相應PMIC以形成一獨立調變晶片結構,晶片基板702主要設置聲波發射單元20以形成一獨立聲波發射晶片結構,晶片基板703主要設置聲波接收單元30以形成一獨立聲波接收晶片結構,而晶片基板704主要設置訊號解調單元40及其相應PMIC以形成又一獨立解調晶片結構。其中前述獨立調變晶片結構可以藉由任意CMOS積體電路製程製造而成,前述獨立聲波發射晶片結構及獨立調變晶片結構可以藉由任意矽感測器晶片製程製造而成,而前述獨立解調晶片結構可以藉由任意CMOS積體電路製程或BCD製程製造而成。據此,本發明之聲耦合器1f可將不同功能之單元分別製造為獨立晶片,並配合選用最適合之製程技術予以製造,使得各晶片之間達到最佳之電性隔絕效果。
Please refer to Fig. 8 for a schematic diagram of the seventh embodiment of the acoustic coupler of the present invention. This embodiment is a structural variation example combining the fifth embodiment and the sixth embodiment. As shown in Fig. 8, in this embodiment, the acoustic coupler 1f of the present invention includes four
以下將進一步說明本發明所使用之前述CMUT發射/接收元件之結構設計。需注意的是,由於聲波發射單元所使用之CMUT發射元件及聲波接收單元所使用之CMUT接收元件具有相似結構,因此以兩者通用之結構特徵加以說明。請一併參考圖9A及圖9B,其中圖9A為本發明之聲耦合器所使用之單一CMUT發射/接收元件之示意圖,圖9B為本發明之聲耦合器所使用之複數CMUT發射/接收元件之示意圖。如圖9A所示,本發明之聲耦合器所使用之單一CMUT發射/接收元件200至少包括介電層210、底部電極220及頂部電極230。底部電極220設置於前述隔絕層80上以便與晶片基板電性隔絕,且底部電極220電性連接
訊號調變單元或訊號解調單元。介電層210設置於隔絕層80上並覆蓋底部電極220,且藉由製程使得介電層210與底部電極220形成空氣間隙240。頂部電極230設置於介電層210上,且頂部電極230電性連接對應之PMIC以取得供電電壓。其中,介電層210可採用SiO2、Si3N4或AlxOy所組成,但本發明不以此為限。
The structural design of the aforementioned CMUT transmitting/receiving element used in the present invention will be further described below. It should be noted that since the CMUT transmitting element used in the acoustic wave transmitting unit and the CMUT receiving element used in the acoustic wave receiving unit have similar structures, the structural features common to both are used for description. Please refer to Figures 9A and 9B together, wherein Figure 9A is a schematic diagram of a single CMUT transmitting/receiving element used in the acoustic coupler of the present invention, and Figure 9B is a schematic diagram of a plurality of CMUT transmitting/receiving elements used in the acoustic coupler of the present invention. As shown in Figure 9A, the single CMUT transmitting/receiving
如圖9B所示,在本發明之一實施例中,當本發明之聲耦合器使用複數CMUT發射/接收元件200時,該些CMUT發射/接收元件200可形成CMUT發射/接收元件陣列。CMUT發射/接收元件陣列係由N x N個CMUT發射/接收元件200所組成,其中所有CMUT發射/接收元件200之底部電極220相互電性連通,且所有CMUT發射/接收元件200之頂部電極230相互電性連通。在相同設置面積之條件下,採用體積較小之複數CMUT發射/接收元件200所組成之CMUT發射/接收元件陣列,相較於採用體積較大之單一CMUT發射/接收元件200將可提高製程之穩固性或良率。
As shown in FIG. 9B , in one embodiment of the present invention, when the acoustic coupler of the present invention uses a plurality of CMUT transmitting/receiving
以上實施方式本質上僅為輔助說明,且並不欲用以限制申請標的之實施例或該等實施例的應用或用途。此外,儘管已於前述實施方式中提出至少一例示性實施例,但應瞭解本發明仍可存在大量的變化。同樣應瞭解的是,本文所述之實施例並不欲用以透過任何方式限制所請求之申請標的之範圍、用途或組態。相反的,前述實施方式將可提供本領域具有通常知識者一種簡便的指引以實施所述之一或多種實施例。再者,可對元件之功能與排列進行各種變化而不脫離申請專利範圍所界定的範疇,且申請專利範圍包含已知的均等物及在本專利申請案提出申請時的所有可預見均等物。 The above embodiments are essentially only for auxiliary explanation and are not intended to limit the embodiments of the subject matter of the application or the application or use of such embodiments. In addition, although at least one exemplary embodiment has been proposed in the above embodiments, it should be understood that there are still a large number of variations of the present invention. It should also be understood that the embodiments described herein are not intended to limit the scope, use or configuration of the claimed subject matter in any way. On the contrary, the above embodiments will provide a simple guide for those with ordinary knowledge in the field to implement one or more of the embodiments described. Furthermore, various changes can be made to the functions and arrangements of the components without departing from the scope defined by the scope of the patent application, and the scope of the patent application includes known equivalents and all foreseeable equivalents at the time of filing this patent application.
1:聲耦合器 1: Acoustic coupler
10:訊號調變單元 10:Signal modulation unit
20:聲波發射單元 20: Sound wave transmitting unit
30:聲波接收單元 30: Sound wave receiving unit
40:訊號解調單元 40:Signal demodulation unit
50:封裝結構 50:Packaging structure
51:頂部交界面 51: Top interface
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| TW111140332A TWI839910B (en) | 2022-10-24 | 2022-10-24 | Acoustic coupler |
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| TWI839910B true TWI839910B (en) | 2024-04-21 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW517922U (en) * | 2001-09-07 | 2003-01-11 | Elan Microelectronics Corp | Integrated circuit device for transmitting and receiving infrared and ultrasonic signal |
| WO2007047700A2 (en) * | 2005-10-18 | 2007-04-26 | Agilent Technologies, Inc. | Acoustic galvanic isolator |
| TW200830745A (en) * | 2007-01-09 | 2008-07-16 | Generalplus Technology Inc | Audio system and related method integrated with ultrasound communication functionality |
| CN205864426U (en) * | 2016-02-24 | 2017-01-04 | 微物联科技有限公司 | Communication system for transmitting data by optical signal |
| TW201730581A (en) * | 2016-02-26 | 2017-09-01 | 凌通科技股份有限公司 | Distance detection method and distance detection device using the same |
| CN208060453U (en) * | 2016-10-25 | 2018-11-06 | 费希尔控制产品国际有限公司 | Acoustic emission sensor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW517922U (en) * | 2001-09-07 | 2003-01-11 | Elan Microelectronics Corp | Integrated circuit device for transmitting and receiving infrared and ultrasonic signal |
| WO2007047700A2 (en) * | 2005-10-18 | 2007-04-26 | Agilent Technologies, Inc. | Acoustic galvanic isolator |
| TW200830745A (en) * | 2007-01-09 | 2008-07-16 | Generalplus Technology Inc | Audio system and related method integrated with ultrasound communication functionality |
| CN205864426U (en) * | 2016-02-24 | 2017-01-04 | 微物联科技有限公司 | Communication system for transmitting data by optical signal |
| TW201730581A (en) * | 2016-02-26 | 2017-09-01 | 凌通科技股份有限公司 | Distance detection method and distance detection device using the same |
| CN208060453U (en) * | 2016-10-25 | 2018-11-06 | 费希尔控制产品国际有限公司 | Acoustic emission sensor device |
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