TWI835433B - Thermal sensing package module - Google Patents

Abstract

A thermal sensing package module includes a driving substrate, a thermal sensing module, a cover and a sealing element. The thermal sensing module includes a silicon substrate, a plurality of thermal sensing units and at least one reference thermal sensing unit. The silicon substrate is disposed on the driving substrate. The thermal sensing units and the reference thermal sensing unit are disposed on the silicon substrate and arranged in an array. A structure of each thermal sensing unit is different from a structure of reference thermal sensing unit. The cover is disposed on the driving substrate, wherein one of the driving substrate and the cover has an opening. The driving substrate, the cover and the sealing element form a vacuum chamber, and the thermal sensing module is located in the vacuum chamber.

Description

Thermal sensing package module

The present invention relates to a thermal sensing packaging module, and in particular to a micro-thermal radiation thermal resistance sensing (micro-bolometer) packaging module.

Wafer Level Packaging (WLP) is a semiconductor packaging method. After the semiconductor components on the wafer are completed through the semiconductor process, the entire wafer is directly packaged, and then wafer saw is performed to form multiple packages respectively. The process is complicated and the packaging cost is relatively high. high.

The present invention provides a thermal sensing packaging module, which has lower packaging cost and better sensing accuracy.

The thermal sensing package module of the present invention includes a driving substrate, a thermal sensing module, a cover and a sealing member. The thermal sensing module includes a silicon substrate, a plurality of thermal sensing units and at least one reference thermal sensing unit. The silicon substrate is arranged on the driving substrate. The thermal sensing unit is configured on the silicon substrate. The reference thermal sensing unit is configured on the silicon substrate. The thermal sensing units and the reference thermal sensing units are arranged in an array. The structure of each thermal sensing unit is different from the structure of the reference thermal sensing unit. The cover is disposed on the drive substrate, wherein one of the drive substrate and the cover has an opening. The driving substrate, the cover and the sealing member form a vacuum chamber, and the thermal sensing module is located in the vacuum chamber.

In an embodiment of the present invention, each of the above thermal sensing units includes a sensing part, a plurality of connection parts and a plurality of pads. The contact pads are arranged on the silicon substrate, the sensing part and the silicon substrate are arranged at intervals, and the connection part is connected between the sensing part and the contact pads.

In an embodiment of the present invention, the above-mentioned reference thermal sensing unit includes a sensing part, a plurality of connection parts and a plurality of pads. The sensing part, the connecting part and the pads are directly arranged on the silicon substrate, and the connecting part is connected between the sensing part and the pads.

In an embodiment of the present invention, the above-mentioned reference thermal sensing unit includes a sensing part, a plurality of connection parts, a plurality of pads and a sacrificial layer. The pads are arranged on the silicon substrate, the sacrificial layer is arranged between the sensing part and the silicon substrate, and the connecting part is connected between the sensing part and the pads.

In an embodiment of the present invention, the above-mentioned reference thermal sensing unit includes a sensing part, a plurality of connection parts, a plurality of contact pads and a shielding part. The contact pads are disposed on the silicon substrate, and the sensing portion is spaced apart from the silicon substrate. The connection part is connected between the sensing part and the pad, and the shielding part is disposed on the silicon substrate and covers the sensing part, the connection part and the pad.

In an embodiment of the present invention, the above-mentioned shielding part includes a first part and a second part. The sensing part is located between the first part and the silicon substrate. The second part connects the first part to the silicon substrate. The material of the first part is different from the material of the second part.

In an embodiment of the present invention, the above-mentioned driving substrate has an opening, and the opening penetrates the driving substrate. The orthographic projection of the thermal sensing module on the driving substrate does not overlap the opening.

In an embodiment of the present invention, the above-mentioned cover has a main body part and a side wall part. The main body part and the driving substrate are arranged oppositely, and the side wall part connects the main body part and the driving substrate.

In an embodiment of the present invention, the above-mentioned cover has an opening, and the opening penetrates the main body part or the side wall part.

In an embodiment of the present invention, the above-mentioned sealing member includes a metal filler, a photosensitive curing material, a cover plate or a plug.

Based on the above, in the design of the thermal sensing package module of the present invention, the thermal sensing module is located in the vacuum chamber formed by the driving substrate, the cover and the seal, which means the thermal sensing unit and the reference thermal sensing The unit is manufactured on a silicon substrate (i.e. wafer) using a semiconductor process, and then cut into the required size to form a thermal sensing module. The unit is then packaged on the drive substrate. Therefore, compared with the existing technology that completes the packaging process on the wafer, the thermal sensing packaging module of the present invention can effectively reduce packaging costs. In addition, the thermal sensing module can correct the signal of the thermal sensing unit by referring to the measurement result of the thermal sensing unit to improve the accuracy of the signal, so that the thermal sensing package module of the present invention has better performance. Sensing accuracy.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.

FIG. 1A is a schematic diagram of a thermal sensing package module according to an embodiment of the present invention. FIG. 1B is a schematic cross-sectional view of the thermal sensing unit in FIG. 1A. 1C is a schematic cross-sectional view of a reference thermal sensing unit according to another embodiment.

Please refer to FIG. 1A first. In this embodiment, the thermal sensing package module 100a includes a driving substrate 110a, a thermal sensing module M1, a cover 170a and a seal 180. The thermal sensing module M1 includes a silicon substrate 115, a plurality of thermal sensing units (three thermal sensing units 120 are schematically shown), and at least one reference thermal sensing unit (one reference thermal sensing unit is schematically shown). 130). The silicon substrate 115 is arranged on the drive substrate 110a. The thermal sensing unit 120 and the reference thermal sensing unit 130 are both disposed on the silicon substrate 115 and arranged in an array. The structure of each thermal sensing unit 120 is different from the structure of the reference thermal sensing unit 130 . The cover 170a is disposed on the driving substrate 110a, wherein one of the driving substrate 110a and the cover 170a has an opening 172. The driving substrate 110a, the cover 170a and the sealing member 180 form a vacuum chamber A1, and the thermal sensing module M1 is located in the vacuum chamber A1.

Specifically, in this embodiment, the driving substrate 110a is, for example, a printed circuit board or other substrate with a working circuit, which is not limited thereto. The thermal sensing unit 120 and the reference thermal sensing unit 130 are manufactured on a silicon substrate 115 (ie, a wafer) using a semiconductor process and cut into required sizes to form the thermal sensing module M1. The thermal sensing units 120 and the reference thermal sensing units 130 are arranged in an array on the silicon substrate 115 and are electrically connected to the driving substrate 110a respectively. In one embodiment, the thermal sensing module M1 is, for example, a micro-bolometer, such as a thermistor-type infrared sensor, which uses materials with high temperature resistivity to sense temperature. But it is not limited to this.

Please refer to FIG. 1A and FIG. 1B simultaneously. In this embodiment, each thermal sensing unit 120 includes a sensing part 122 , a plurality of connecting parts 124 and a plurality of pads 126 . The contact pad 126 is disposed on the silicon substrate 115 , the sensing part 122 is spaced apart from the silicon substrate 115 , and the connection part 124 is connected between the sensing part 122 and the contact pad 126 . That is to say, the thermal sensing unit 120 of this embodiment is embodied as a suspended structure, in which the sensing part 122 does not contact the silicon substrate 115 and is in a suspended state. Here, the sensing part 122 can detect thermal reaction, material reaction and electrical signal reaction. Furthermore, each thermal sensing unit 120 in this embodiment further includes a protective layer 128 , where the protective layer 128 covers the sensing part 122 and the connecting part 124 to protect the sensing part 122 and the connecting part 124 . Here, the material of the sensing part 122 is, for example, vanadium oxide (VO _x ), silicon germanium (SiGe) or amorphous silicon (Alpha-Si), but is not limited thereto. The material of the connecting portion 124 is, for example, aluminum (Al), titanium (Ti) or vanadium (V), but is not limited thereto. The material of the pad 126 is, for example, aluminum (Al), titanium (Ti) or tungsten (W), but is not limited thereto. The material of the protective layer 128 is, for example, an insulating material, such as silicon nitride (Si ₃ N ₄ ) or aluminum oxide (Al ₂ O ₃ ), but is not limited thereto.

Please refer to FIG. 1A again. In this embodiment, the reference thermal sensing unit 130 includes a sensing part 132, a plurality of connection parts 134 and a plurality of pads 136. The sensing part 132 , the connecting part 134 and the pad 136 are directly disposed on the silicon substrate 115 , and the connecting part 134 is connected between the sensing part 132 and the pad 136 . That is to say, the reference thermal sensing unit 130 of this embodiment is embodied as a non-suspended structure and is directly connected to the driving substrate 110a, so the sensing part 132 can directly measure the temperature on the driving substrate 110a. Here, the materials of the sensing part 132, the connecting part 134 and the pad 136 are the same as the materials of the sensing part 122, the connecting part 124 and the pad 126 respectively. Therefore, the process material ( That is, the basic characteristics of the sensing part 132 (including signal changes caused by environmental changes) and production variations can be used to correct the signal of the thermal sensing unit 120 to improve the accuracy of the signal, so that the thermal sensor of this embodiment can be The sensing package module 100a has better sensing accuracy.

Furthermore, the cover 170a of this embodiment has a main body part 171 and a side wall part 175. The main body part 171 is arranged opposite to the driving substrate 110a, and the side wall part 175 connects the main body part 171 and the driving substrate 110a. Here, the material of the cover 170a is, for example, a light-transmitting material, such as a silicon cover. In one embodiment, in order to increase the heat transmittance, a multi-layer film can be selectively plated on the surface of the main body 171 of the cover 170a that is relatively far away from the driving substrate 110a. As shown in FIG. 1A , the cover 170a of this embodiment has an opening 172 , and the opening 172 penetrates the side wall 175 . The sealing device with the reserved opening 172 is placed in the reaction chamber (Chamber), and after being evacuated and/or inflated, a metal filler is formed in the opening 172 using a semiconductor process to seal it, or it is filled with a light-sensitive curing material. Open the hole 172 and cure it with light to seal it. That is to say, the sealing member 180 of this embodiment can be, for example, a metal filler or a photosensitive curing material, but is not limited thereto. The driving substrate 110a, the cover 170a and the sealing member 180 can form a vacuum chamber A1, and the thermal sensing module M1 is located in the vacuum chamber A1. Compared with the existing technology, which completes the packaging process on a wafer, the thermal sensing unit 120 and the reference thermal sensing unit 130 of this embodiment are manufactured on the silicon substrate 115 (ie, the wafer) using a semiconductor process. And cut to the required size to form the thermal sensing module M1. Then, the thermal sensing module M1, the driving substrate 110a and the cover 170a are assembled under normal atmospheric conditions, and finally, moved to an environment under vacuum conditions. After the vacuum chamber A1 is formed, the opening 172 is sealed with the sealing member 180 to complete the packaging process. Therefore, this packaging method can have lower process cost and higher yield.

It should be noted that the present invention is not limited to the structure of the reference thermal sensing unit 130 mentioned above. In another embodiment, please refer to FIG. 1C , the structure of the reference thermal sensing unit 140 may be different from the reference thermal sensing unit 130 . In detail, the reference thermal sensing unit 140 includes a sensing part 142, a plurality of connection parts 144, a plurality of pads 146 and a sacrificial layer 145. The contact pad 146 is disposed on the silicon substrate 115 , the sacrificial layer 145 is disposed between the sensing part 142 and the silicon substrate 115 , and the connection part 144 is connected between the sensing part 142 and the contact pad 146 . That is to say, the reference thermal sensing unit 140 of this embodiment is still embodied as a suspension-free structure, in which the sensing portion 142 and the silicon substrate 115 are separated by the sacrificial layer 145 . Here, the materials of the sensing part 142, the connecting part 144 and the pad 146 are the same as the materials of the sensing part 122, the connecting part 124 and the pad 126 respectively. Therefore, the process material ( That is, the basic characteristics of the sensing part 142 (including signal changes caused by environmental changes) and production variations can be used to correct the signal of the thermal sensing unit 120 to improve the accuracy of the signal. In addition, the reference thermal sensing unit 140 further includes a protective layer 148 , where the protective layer 148 covers the sensing part 142 and the connecting part 144 to protect the sensing part 142 and the connecting part 144 . Here, the material of the protective layer 148 is, for example, silicon nitride (Si ₃ N ₄ ) or aluminum oxide (Al ₂ O ₃ ), but is not limited thereto. The material of the sacrificial layer 145 is, for example, photo resistor. For example, polyparahydroxystyrene and its derivatives are commonly used as the main material of the photoresist for 248nm photoresist. Alternatively, the 193nm photoresist is polyester cyclic acrylic. esters and their copolymers; alternatively, EUV photoresists commonly use polyester derivatives and molecular glass single-component materials as the main materials. In addition to the main material, photoresists generally add photoresist solvents, photoacid generators, cross-linking agents or other additives.

In short, in this embodiment, the thermal sensing module M1 is located in the vacuum chamber A1 formed by the driving substrate 110a, the cover 170a and the seal 180, that is, the thermal sensing unit 120 and the reference thermal sensor. The unit 130 is manufactured on the silicon substrate 115 (ie, the wafer) using a semiconductor process and cut into required sizes to form the thermal sensing module M1, and then is packaged on the driving substrate 110a. Therefore, compared with the existing technology that completes the packaging process on the wafer, the thermal sensing packaging module 100a of this embodiment can effectively reduce the packaging cost. In addition, the thermal sensing module M1 can correct the signal of the thermal sensing unit 120 by referring to the measurement result of the thermal sensing unit 130 (or the reference thermal sensing unit 140) to improve the accuracy of the signal, which can make the present invention The thermal sensing package module 100a of the embodiment has better sensing accuracy.

It must be noted here that the following embodiments follow the component numbers and part of the content of the previous embodiments, where the same numbers are used to represent the same or similar elements, and descriptions of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be repeated in the following embodiments.

FIG. 2 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. Please refer to Figure 1A and Figure 2 at the same time. The thermal sensing package module 100b of this embodiment is similar to the thermal sensing package module 100a of Figure 1A. The difference between the two is that the position of the opening 112 in this embodiment is different from The location of opening 172 of Figure 1A. Specifically, in this embodiment, the driving substrate 110b has an opening 112, and the opening 112 penetrates the driving substrate 110b. The orthographic projection of the thermal sensing module M1 on the driving substrate 110b does not overlap the opening 112. Here, the main body part 171 and the side wall part 175 of the cover body 170b have an integrally formed structure, and the driving substrate 110b, the cover body 170b and the sealing member 180 form the vacuum chamber A2.

FIG. 3 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. Please refer to Figure 1A and Figure 3 at the same time. The thermal sensing package module 100c of this embodiment is similar to the thermal sensing package module 100a of Figure 1A. The difference between the two is that the position of the opening 174 in this embodiment is different from The position of the opening 172 in FIG. 1A and the structure of the reference thermal sensing unit 150 are different from the structure of the reference thermal sensing unit 130 of FIG. 1A mentioned above.

Specifically, in this embodiment, the cover 170c has an opening 174, and the opening 174 penetrates the main body 171. The orthographic projection of the thermal sensing module M2 on the driving substrate 110a does not overlap the opening 174. Here, the driving substrate 110a, the cover 170c and the sealing member 180 form a vacuum chamber A3, and the thermal sensing module M2 is located in the vacuum chamber A3.

Furthermore, the reference thermal sensing unit 150 of this embodiment includes a sensing part 152, a plurality of connection parts 154, a plurality of contact pads 156 and a shielding part 155. The contact pad 156 is disposed on the silicon substrate 115 , and the sensing portion 152 is spaced apart from the silicon substrate 115 . The connecting part 154 is connected between the sensing part 152 and the pad 156, and the shielding part 155 is disposed on the silicon substrate 115 and covers the sensing part 152, the connecting part 154 and the pad 156 to prevent the sensing part 152 from receiving External thermal radiation signal. Furthermore, the shield part 155 of this embodiment includes a first part 157 and a second part 159 . The sensing part 152 is located between the first part 157 and the silicon substrate 115 . The second part 159 connects the first part 157 and the silicon substrate 115 . The material of the first part 157 is different from the material of the second part 159. The material of the first part 157 is, for example, aluminum (Al), titanium (Ti) or vanadium (V), while the material of the second part 159 is, for example, aluminum (Al). , titanium (Ti) or tungsten (W), but not limited to this. In short, the reference thermal sensing unit 150 of this embodiment is embodied as a mask-type suspended structure.

Here, the materials of the sensing part 152 , the connecting part 154 and the pad 156 are the same as the materials of the sensing part 122 , the connecting part 124 and the pad 126 respectively, and the reference thermal sensing unit 150 also includes a covering sensing part 152 , the connecting portion 154 and the mask portion 155 of the pad 156, so the reference thermal sensing unit 150 can measure the basic characteristics of the component during circuit measurement, which can be used as a correction thermal sensing unit 120 during circuit measurement. The differential signal is used to improve the accuracy of the signal, so that the thermal sensing package module 100c of this embodiment has better sensing accuracy.

FIG. 4 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. Please refer to Figure 3 and Figure 4 at the same time. The thermal sensing package module 100d of this embodiment is similar to the thermal sensing package module 100c of Figure 3. The difference between the two is that in this embodiment, the thermal sensing module M3 includes a silicon substrate 115, a thermal sensing unit 120, a reference thermal sensing unit 130 and a reference thermal sensing unit 160, which means that it includes different types of reference thermal sensing units, where the thermal sensing unit 120 is located at the reference thermal sensing unit. between the sensing unit 130 and the reference thermal sensing unit 160 .

Specifically, in this embodiment, the reference thermal sensing unit 130 includes a sensing portion 132 , a plurality of connecting portions 134 and a plurality of pads 136 . The sensing part 132 , the connecting part 134 and the pad 136 are directly disposed on the silicon substrate 115 , and the connecting part 134 is connected between the sensing part 132 and the pad 136 . That is to say, the reference thermal sensing unit 130 of this embodiment is embodied as a non-suspended structure and is directly connected to the silicon substrate 115 . Here, the materials of the sensing part 132, the connecting part 134 and the pad 136 are the same as the materials of the sensing part 122, the connecting part 124 and the pad 126 respectively. Therefore, the process material ( That is, the basic characteristics of the sensing part 132 (including signal changes caused by environmental changes) and production variations can be used to correct the signal of the thermal sensing unit 120 to improve the accuracy of the signal.

In addition, the reference thermal sensing unit 160 includes a sensing portion 162 , a plurality of connection portions 164 , a plurality of contact pads 166 and a shielding portion 165 . The contact pad 166 is disposed on the silicon substrate 115 , and the sensing portion 162 is spaced apart from the silicon substrate 115 . The connection part 164 is connected between the sensing part 162 and the pad 166 , and the shielding part 165 is disposed on the silicon substrate 115 and covers the sensing part 162 , the connection part 164 and the pad 166 . The material of the mask part 165 is, for example, metal aluminum (Al), titanium (Ti) or vanadium (V), but is not limited thereto. That is to say, the reference thermal sensing unit 160 of this embodiment is embodied as a mask-type suspended structure. Here, the materials of the sensing part 162 , the connecting part 164 and the pad 166 are the same as the materials of the sensing part 122 , the connecting part 124 and the pad 126 respectively, and the reference thermal sensing unit 160 also includes a covering sensing part 162 , the connecting portion 164 and the mask portion 165 of the pad 166, so the reference thermal sensing unit 160 can measure the basic characteristics of the component during circuit measurement, which can be used to correct the thermal sensing unit 120 during circuit measurement. differential signal to improve the accuracy of the signal.

In short, the thermal sensing module M3 of this embodiment may include different types of reference thermal sensing units 130 and 160, and be sealed in a vacuum cavity formed by the driving substrate 110a, the cover 170c and the sealing member 180. In the chamber A3, in addition to reducing the packaging cost of the thermal sensing package module 100d of this embodiment, reference coefficients with different characteristics can also be provided to correct the signal of the thermal sensing unit 120 to improve the accuracy of the signal. , so that the thermal sensing package module 100d of this embodiment has better sensing accuracy.

FIG. 5 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. Please refer to Figure 3 and Figure 5 at the same time. The thermal sensing package module 100e of this embodiment is similar to the thermal sensing package module 100c of Figure 3. The difference between the two is that in this embodiment, the seal 182 is embodied. As a cover plate. After the sealing device with the reserved opening 174 is placed in the reaction chamber to be evacuated and/or inflated, the opening 174 is sealed with the sealing member 182 (i.e., the cover piece) and an adhesive to form a vacuum chamber A3, in which the heat The sensing module M2 is located in the vacuum chamber A3.

FIG. 6 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. Please refer to Figure 5 and Figure 6 at the same time. The thermal sensing package module 100f of this embodiment is similar to the thermal sensing package module 100e of Figure 5. The difference between the two is that in this embodiment, the reference thermal sensing unit The structure of 130 is different from the structure of the reference thermal sensing unit 150 of FIG. 5 described above, and the sealing member 184 is embodied as a plug.

In detail, the reference thermal sensing unit 130 includes a sensing portion 132 , a plurality of connecting portions 134 and a plurality of pads 136 . The sensing part 132 , the connecting part 134 and the pad 136 are directly disposed on the silicon substrate 115 , and the connecting part 134 is connected between the sensing part 132 and the pad 136 . That is to say, the reference thermal sensing unit 130 of this embodiment is embodied as a non-suspended structure and is directly connected to the driving substrate 110a. Here, the materials of the sensing part 132, the connecting part 134 and the pad 136 are the same as the materials of the sensing part 122, the connecting part 124 and the pad 126 respectively. Therefore, the process material ( That is, the basic characteristics of the sensing part 132 (including signal changes caused by environmental changes) and production variations can be used to correct the signal of the thermal sensing unit 120 to improve the accuracy of the signal, so that the thermal sensor of this embodiment can be The sensing package module 100f has better sensing accuracy. In addition, after the sealing device with reserved opening 174 is placed in the reaction chamber to be evacuated and/or inflated, the opening 174 is sealed with a sealing member 184 (i.e., a plug), and the sealing can be improved with polymer or oil. of sealing.

FIG. 7 is a top perspective view of a thermal sensing package module according to another embodiment of the present invention. For convenience of explanation, the openings provided on the driving substrate or the cover plate are omitted in FIG. 7 . Please refer to FIG. 1A and FIG. 7 at the same time. The thermal sensing package module 100g of this embodiment is similar to the thermal sensing package module 100a of FIG. 1A. The difference between the two is that in this embodiment, the thermal sensing module M4 includes a silicon substrate 115, a thermal sensing unit 120, a reference thermal sensing unit RP, a plurality of signal line setting areas 190 and a plurality of input/output pads 195. The thermal sensing unit 120, the reference thermal sensing unit RP, a plurality of signal line setting areas 190 and a plurality of input/output pads 195 are manufactured on a silicon substrate 115 (ie, a wafer) using a semiconductor process and cut into The thermal sensing module M4 is formed into the required size. The thermal sensing unit 120 and the reference thermal sensing unit RP are arranged in an array on the silicon substrate 115, where the thermal sensing unit 120 is located between the reference thermal sensing unit RP, and the reference thermal sensing unit RP can be determined by the reference of the previous embodiment. It is implemented by at least any one of the thermal sensing units 130, 140, 150, and 160. One or more traces (not shown) can be provided in the signal line setting area 190 according to requirements, wherein the signal line setting area 190 is configured at opposite two sides of the array formed by the thermal sensing unit 120 and the reference thermal sensing unit RP. side, and is located between the input/output pad 195 and the array formed by the thermal sensing unit 120 and the reference thermal sensing unit RP. The cover 170 is disposed on the driving substrate 110 and covers the thermal sensing module M4. The thermal sensing module M4 is packaged on the driving substrate 110 to form the thermal sensing package module 100g.

FIG. 8 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. Please refer to FIG. 1A and FIG. 8 at the same time. The thermal sensing package module 100h of this embodiment is similar to the thermal sensing package module 100a of FIG. 1A. The difference between the two is that in this embodiment, the cover 170h includes a A first part 176 and a second part 177, wherein the extending direction of the first part 176 is perpendicular to the extending direction of the second part 177, and the first part 176 is fixed on the second part 177. The second part 177 has an opening 172 and an opening 178 , and the first part 176 bridges the second part 177 and covers the opening 178 . Here, the first part 176 of the cover 170h is, for example, germanium glass or a silicon cover plate coated with a multi-layer film, which allows the infrared light L2 with a wavelength of 8 microns to 14 microns to penetrate and allows the visible light L1 to be reflected; and the cover 170h The second part 177 is made of opaque material. The driving substrate 110a, the cover 170h and the sealing member 180 form a vacuum chamber A4, and the thermal sensing module M1 is located in the vacuum chamber A4.

To sum up, in the design of the thermal sensing package module of the present invention, the thermal sensing module is located in the vacuum chamber formed by the driving substrate, the cover and the seal, which means the thermal sensing unit and the reference thermal The sensing unit is manufactured on a silicon substrate (i.e., a wafer) using a semiconductor process and cut into required sizes to form a thermal sensing module, which is then packaged on a drive substrate. Therefore, compared with the existing technology that completes the packaging process on the wafer, the thermal sensing packaging module of the present invention can effectively reduce packaging costs. In addition, the thermal sensing module can correct the signal of the thermal sensing unit by referring to the measurement result of the thermal sensing unit to improve the accuracy of the signal, so that the thermal sensing package module of the present invention has better performance. Sensing accuracy.

Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.

100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h: thermal sensing package module

110, 110a, 110b: drive substrate

112:Opening

115:Silicon substrate

120: Thermal sensing unit

122, 132, 142, 152, 162: Sensing part

124, 134, 144, 154, 164: Connection part

126, 136, 146, 156, 166: pads

128, 148: Protective layer

130, 140, 150, 160, RP: Reference thermal sensing unit

145:Sacrificial layer

155, 165: Mask part

157:Part One

159:Part 2

170, 170a, 170b, 170c, 170h: cover

171:Main part

172, 174: Opening

175: Side wall part

176:Part One

177:Part 2

178:Open your mouth

180, 182, 184: seals

190: Signal line setting area

195:Input/output pad

A1, A2, A3, A4: vacuum chamber

L1: visible light

L2: infrared light

M1, M2, M3, M4: thermal sensing module

FIG. 1A is a schematic diagram of a thermal sensing package module according to an embodiment of the present invention. FIG. 1B is a schematic cross-sectional view of the thermal sensing unit in FIG. 1A. 1C is a schematic cross-sectional view of a reference thermal sensing unit according to another embodiment. FIG. 2 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. FIG. 3 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. FIG. 4 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. FIG. 5 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. FIG. 6 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention. FIG. 7 is a top perspective view of a thermal sensing package module according to another embodiment of the present invention. FIG. 8 is a schematic diagram of a thermal sensing package module according to another embodiment of the present invention.

100a: Thermal sensing package module

110a: Drive substrate

115: Silicon substrate

120: Thermal sensing unit

122, 132: Sensing part

124, 134: Connector

126, 136: pad

130: Reference thermal sensing unit

170a: Cover

171:Main part

172:Opening

175: Side wall part

180:Seals

A1: Vacuum chamber

M1: Thermal sensing module

Claims (9)

A thermal sensing package module, including: a driving substrate; a thermal sensing module including: a silicon substrate, configured on the driving substrate; a plurality of thermal sensing units, configured on the silicon substrate; at least one A reference thermal sensing unit is configured on the silicon substrate, wherein the thermal sensing units and the at least one reference thermal sensing unit are arranged in an array, and the structure of each thermal sensing unit is different from the at least one reference thermal sensing unit. The structure of the detection unit; a cover disposed on the drive substrate, the cover has a main body and a side wall, the main body is opposite to the drive substrate, and the side wall connects the main body and the drive substrate. , wherein one of the driving substrate and the cover has an opening; and a sealing member, the driving substrate, the cover and the sealing member form a vacuum chamber, and the thermal sensing module is located in the vacuum chamber inside the chamber. The thermal sensing package module according to claim 1, wherein each thermal sensing unit includes a sensing part, a plurality of connection parts and a plurality of pads, the pads are arranged on the silicon substrate, and the The sensing part is spaced apart from the silicon substrate, and the connection parts are connected between the sensing part and the pads. The thermal sensing package module of claim 1, wherein the at least one reference thermal sensing unit includes a sensing portion, a plurality of connection portions and a plurality of pads, and the sensing portion The portion, the connecting portions and the pads are directly disposed on the silicon substrate, and the connecting portions are connected between the sensing portion and the pads. The thermal sensing package module of claim 1, wherein the at least one reference thermal sensing unit includes a sensing part, a plurality of connection parts, a plurality of pads and a sacrificial layer, and the pads are configured on the On the silicon substrate, the sacrificial layer is disposed between the sensing part and the silicon substrate, and the connection parts are connected between the sensing part and the pads. The thermal sensing package module of claim 1, wherein the at least one reference thermal sensing unit includes a sensing part, a plurality of connection parts, a plurality of contact pads and a shield part, and the contact pads are configured on On the silicon substrate, the sensing portion is spaced apart from the silicon substrate, the connection portions are connected between the sensing portion and the pads, and the shielding portion is disposed on the silicon substrate and covers the silicon substrate. The sensing part, the connection parts and the pads. The thermal sensing package module of claim 5, wherein the shield part includes a first part and a second part, the sensing part is located between the first part and the silicon substrate, and the second part is connected The first part and the silicon substrate, and the material of the first part is different from the material of the second part. The thermal sensing package module of claim 1, wherein the driving substrate has the opening, and the opening penetrates the driving substrate, and the orthographic projection of the thermal sensing module on the driving substrate does not overlap the opening. hole. The thermal sensing package module of claim 1, wherein the cover has the opening, and the opening penetrates the main body part or the side wall part. The thermal sensing package module of claim 1, wherein the sealing member includes a metal filler, a light-sensitive curing material, a cover plate or a plug.