TWI833971B - Laser device - Google Patents

Abstract

A laser device includes a carrier substrate, a laser unit, a prism, a base, a fence, and a lens. The laser unit is located on a top surface of the carrier substrate, and has a light-emitting surface. The prism is located on the top surface of the carrier substrate to change a moving direction of a light beam emitted from the laser unit. The base is located between the laser unit and the carrier substrate, and has a side surface faces the prism. The fence is located on the top surface of the carrier substrate and surrounds the laser unit and the prism. The lens is located on the fence and covers the fence, the laser unit and the prism. The light-emitting surface of the laser unit protrudes the side surface of the base.

Description

Laser components

The present invention relates to a laser element, and in particular to a laser element having a laser unit, a lens, and a lens.

With the vigorous development of the optoelectronic industry, light emitting units such as light emitting diodes (LEDs) and laser diodes (LDs) are widely used in various fields, such as displays for various electronic products. backlights, optical sensors, laser microscopes, scanners, etc., or directly used for lighting purposes.

However, the light-emitting unit will generate a large amount of heat energy during operation. If the heat energy in the light-emitting unit cannot be effectively released, the accumulated heat energy will increase the temperature of the light-emitting unit, which will not only affect the stability and stability of the light-emitting unit. Luminous efficiency will also reduce the service life of light-emitting components.

Therefore, in order to solve the problem of temperature rise faced by the light-emitting unit during operation, refer to Figure 1, taking the laser diode as an example. The common packaging method of the laser diode is the TO (Transistor Outline) CAN package, which has A heat dissipation structure is used for heat dissipation. As shown in Figure 1, the laser package 10 includes a packaging shell 11, a heat dissipation block 12, a laser diode 13 connected to the heat dissipation block 12, an electrode unit 14 for conducting electrical energy and the laser diode The body 13 is electrically connected to a glass lens 15 . The heat sink 12 is used to conduct the heat energy released by the laser diode 13 . The heat dissipation efficiency of the conventional laser package 10 is poor due to the long heat conduction path of the heat dissipation block 12, and the cost of the TO CAN package is relatively high, and its packaging process is also relatively complex.

In addition, if the laser package 10 is used in a light-emitting module, optical design and matching of a lens/lens are required to emit a suitable light pattern, and the manufacturing process also requires time and cost for assembly.

The present invention provides a laser element, which integrates a laser unit, a lens and a lens in the same package, thereby minimizing the volume.

The invention provides a laser element, which includes a carrier plate, a laser unit, a lens, a base, a fence, and a lens. The laser unit is located on the upper surface of the carrier plate and has a light-emitting surface; the laser unit is disposed on the upper surface of the carrier plate to change the traveling direction of a beam emitted by the laser unit; the base is located on the laser between the laser unit and the carrier plate, and has a side facing the laser; the fence is set on the upper surface of the carrier plate, surrounding the laser unit and the laser; the lens is located on the fence, covering the fence, the laser unit and the laser; The light exit surface of the emission unit protrudes from the side of the base.

In order to make the description of the present invention more detailed and complete, please refer to the description of the following embodiments and the relevant illustrations. However, the embodiments shown below are used to illustrate the light-emitting module components of the present invention, and the present invention is not limited to the following embodiments. In addition, the size, material, shape, relative arrangement, etc. of the constituent parts described in the embodiments described in this specification are not described as limiting, and the scope of the present invention is not limited thereto, but is merely explained. In addition, the size and positional relationship of components shown in each diagram may be exaggerated for clear explanation. In addition, in the following description, in order to omit detailed description appropriately, members of the same or similar nature are shown with the same names and symbols.

Figure 2 is a schematic diagram of a laser element 100 disclosed according to an embodiment of the present invention. Figure 3 is a top view of a laser element 100 disclosed according to an embodiment of the present invention. Figure 4 is a cross-sectional view along line AA' in Figure 3.

Referring to Figures 2 to 4, the laser component 100 includes a carrier board 110, a laser unit 120, a lens 130, an electronic component 180, a fence 140, and a lens 150. The carrier plate 110 includes an upper surface 111 and a lower surface 112; the fence 140 is arranged on the periphery of the upper surface 111 of the carrier plate 110, forming a chamber V in the center of the upper surface 111; the laser unit 120, the laser 130, and the electronic The component 180 is located on the upper surface 111 of the carrier plate 110 and is located in the chamber V and surrounded by the fence 140 . The laser unit 120 is arranged adjacent to the laser beam 130, and the light exit surface 120s of the laser unit 120 faces the laser beam 130. The laser beam 130 is used to change a traveling direction of the light beam L emitted by the laser unit 120, so that the laser beam It can be emitted from above the laser element 100; the lens 150 is located on the fence 140, covering the fence 140, the chamber V, the laser unit 120, the electronic component 180, and the lens 130.

As shown in FIG. 4 , the laser unit 120 emits a beam L having a first beam size from the light exit surface 120s. In order to enable the beam L emitted by the laser unit 120 to be used more efficiently and without scattering, the laser beam 130 is disposed in the traveling direction of the beam L to change the traveling direction of the beam L, so that the traveling direction of the beam L is changed from transverse to transverse. To move upward toward the lens 150. The light beam L is collimated into a parallel light beam L' having a second beam size after passing through the lens 150, and the second beam size is different from the first beam size. In one embodiment, the second beam size is smaller than the first beam size. The beam size is defined as the area of the beam projected on a plane perpendicular to its direction of travel. This area contains approximately 86% of the beam energy.

In this embodiment, the light beam L emitted by the laser unit 120 from the light emitting surface 120s is an elliptical divergent light beam. This divergent light beam is reflected or refracted by the lens 130 and then changes its traveling direction, and then is collimated into a parallel light beam L' by the lens 150 and emitted outward. In order to prevent the light beam L from being reflected on the light incident side 150s of the lens 150, an anti-reflective coating can be selectively coated on the light incident side 150s of the lens 150. Anti-reflective coating materials include silicon oxide, silicon nitride, metal oxides or metal nitrides.

In order to make the laser element 100 comply with the optical design required by the application, the lens 150 can be a plano-convex lens, a meniscus lens or a biconvex lens. The light exit side 150p of the lens 150 is preferably a convex surface, so that the uncollimated light beam L emitted by the laser unit 120 can be collimated and emitted after passing through the lens 130 and/or the lens 150. In this embodiment, the shape of the collimated/parallel light beam L' projected on a projection surface above the lens 150 (perpendicular to the traveling direction of the light beam L') after being emitted through the lens 150 is an ellipse.

When oxygen or moisture from the external environment penetrates into the laser element 100, it will seriously shorten the life of the laser unit 120. Therefore, it is particularly important to provide effective hermetic packaging for the laser element 100 . In this embodiment, the fence 140 is connected to the carrier plate 110, and the chamber V forms an airtight space. The placement of the laser unit 120 in the chamber V can prevent oxygen or moisture from intruding into the semiconductor structure of the laser unit 120 , and can prevent organic matter or inorganic matter from collecting dust on the light emitting surface 120 s of the laser unit 120 . In order to ensure the reliability of the airtightness of the chamber V, an adhesive part (not shown) can be optionally placed on the connection surface between the lens 150 and the fence 140 . The material of the bonding part may include organic materials or metal materials. Organic materials, such as AB glue. Metal materials, such as AuSn.

The shape of the fence 140 may be a circular tube, a polygon or a rectangular tube. The material of the fence 140 includes metal materials with good thermal conductivity, ceramic materials or any thermally conductive materials to assist in heat dissipation. Metallic materials include gold, copper, aluminum, tungsten or tin. Ceramic materials include aluminum oxide, aluminum nitride or silicon carbide. In one embodiment, the fence 140 and the carrier plate 110 can be selectively connected using an adhesive portion (not shown). The material of the bonding part may include organic materials or metal materials. Organic materials, such as AB glue. Metal materials, such as AuSn. In another embodiment, when the material of the fence 140 includes metal, it can be directly formed on the carrier 110 through an evaporation or electroplating process.

In order to increase the overall thermal conductivity of the laser element 100, the carrier plate 110 includes materials with good thermal conductivity to assist in heat dissipation. The material of the carrier plate 110 includes insulating materials or metal materials. In one embodiment of the invention, the insulating material includes ceramic, such as aluminum nitride, aluminum oxide or silicon carbide. Metal materials include gold, copper, aluminum, tungsten, tin or alloys of the above materials.

The laser unit 120 includes an edge-emitting laser or a surface-emitting laser. The laser unit 120 can select any wavelength according to the purpose, such as ultraviolet laser, blue laser light source, green laser light source or red laser light source.

When the laser unit 120 is a blue laser, the wavelength of its luminescence peak is preferably in the range of 420 nm to 494 nm, and more preferably in the range of 440 nm to 475 nm. As a semiconductor laser light source that emits blue laser, its material includes nitride semiconductor, such as GaN, InGaN or AlGaN.

When the laser unit 120 is a green laser, the wavelength of its luminescence peak is preferably in the range of 495 nm to 570 nm, and more preferably in the range of 510 nm to 550 nm. As a semiconductor laser source that emits green laser, its material contains nitride semiconductor, such as GaN, InGaN or AlGaN.

When the laser unit 120 is a red laser, the wavelength of its luminescence peak is preferably in the range of 605 nm to 750 nm, and more preferably in the range of 610 nm to 700 nm. As a semiconductor laser source that emits red light laser, its material includes InAlGaP, GaInP, GaAs or AlGaAs.

The lens 130 can be a reflective mirror, a concave mirror or a convex lens. In addition to changing the traveling direction of the light beam L, the beam 130 can also change the shape and divergence angle of the light beam L. In order to reduce light loss, the reflectivity of 稜鏡130 is preferably greater than 80%. Furthermore, in order for the lens 130 to have a sufficient reflection area to guide the light beam L to the lens 150, as shown in FIG. 4, the slope length P of the lens 130 is preferably more than 5 times the total height H of the laser unit 120, which is shorter than the total height H of the laser unit 120. Preferably, it is more than 6 times, and more preferably, it is more than 7 times. The light emitting surface 120s of the laser unit 120 and the inclined surface 130s of the lens 130 are opposite to each other at an inclination angle. After the light beam L is emitted from the light exit surface 120s of the laser unit 120, it is reflected by the lens 130 and directed to the lens 150. The inclined surface 130s of the hood 130 has an included angle θ relative to the lower surface 130b of the hood 130, and the included angle θ is an acute angle, preferably between 40 and 50 degrees, and more preferably 45 degrees, so that the light beam L can pass through the hood Turn to travel upward.

Figure 3A is a schematic diagram of the corresponding structures of the top view and side view of the lens 130 and the lens 150. Viewed from a top view, the inclined surface 130s of the lens 130 includes a first end p1 and a second end p2. The first end p1 is closer to the laser unit 120 than the second end p2. Lens 150 includes a center point 150c. The first end p1 and the second end p2 of the inclined surface 130s are located on both sides of the center point 150c of the lens 150. The distance between the first end p1 of the lens 130 and the center point 150c of the lens 150 is smaller than the distance between the second end p2 of the lens 130 and the center point 150c of the lens 150. Referring to Figures 3 and 4, there is a shortest distance m between the laser unit 130 and the light emitting surface 120s of the laser unit 120, which is between 100 μm and 150 μm, for example, 115 and 125 μm. The shortest distance m is also the distance between the first end p1 of the laser unit 130 and the light emitting surface 120s of the laser unit 120. Referring to FIG. 4 , the lens is located above the electronic component 180 , the lens 130 , and the laser unit 120 , and is not in direct contact with the electronic component 180 , the lens 130 , and the laser unit 120 . In this embodiment, the width of lens 150 is smaller than the width of fence 140 . In another embodiment, the width of lens 150 is substantially equal to the width of fence 140 .

When the mirror 130 is a reflective mirror or a mirror with a reflective coating, the light beam L emitted by the laser unit 120 can be utilized more efficiently and without scattering.

The material of the phosphorus 130 is preferably a heat-resistant material, such as quartz, glass, sapphire or metal. In a variation of this embodiment, the light incident side (slope 130s) of the lens 130 is provided with a reflective coating, and the reflective coating includes a multi-layer film formed by an alternating stack of dielectric materials.

Figure 3 is a top view of a laser element 100 disclosed according to an embodiment of the present invention. As shown in FIG. 3 , the carrier 110 has a first long side L1 and a second long side L2 facing each other, and a first short side S1 and a second short side S2 facing each other. The first short side S1 and the second short side S2 are orthogonal to the first long side L1 and the second long side L2.

Figure 3B is a schematic diagram of Figure 3 with part of the structure omitted. As shown in FIGS. 3 and 3B , a first metal electrode 200 and a second metal electrode 300 are located on the upper surface 111 of the carrier 110 and are separated from each other, and are electrically connected to the laser unit 120 and the electronic component 180 . The first metal electrode 200 is adjacent to the first long side L1 and includes a first metal body part 201 with different widths from each other, a first metal carrying part 202, and a first metal extension part 203 located between the first metal body part 201 and the first metal carrying part. between Department 202. The first metal body part 201 is used to carry the laser unit 120 , the first metal carrying part 202 is used to carry the electronic component 180 , and the first metal extension part 203 is used to connect the first metal body part 201 and the first metal carrying part 202 . The width of the first metal extension part 203 is smaller than the width of the first metal main part 201 and the first metal carrying part 202 , and the width of the first metal main part 201 is larger than the width of the first metal carrying part 202 . The second metal electrode 300 is adjacent to the second long side L2 and includes a second metal carrying portion 302 with different widths from each other and a second metal extending portion 303 extending outwardly from the second metal carrying portion 302 . The second metal carrying part 302 is used to carry the electronic component 180 , and the second metal extending part 303 is electrically connected to the laser unit 120 through the bonding wire 301 . The width of the second metal extension part 303 is smaller than the width of the second metal bearing part 302 . The distance N1 between the first metal extension part 203 and the second metal extension part 303 is larger than the distance N2 between the first metal support part 202 and the second metal support part 302 . The distance N1 between the first metal extension part 203 and the second metal extension part 303 is larger than the distance N3 between the first metal body part 201 and the second metal extension part 303 .

As shown in FIG. 3B , the electrode 130 can be disposed on a recess 208 between the first metal electrode 200 and the second metal electrode 300 by gluing or plugging. The electrode 130 is not in contact with the first metal electrode 200 and the second metal electrode 300 . In detail, the lens 130 is located between the first metal extension part 203 and the second metal extension part 303 , and between the electronic component 180 and the laser unit 120 . The width of the laser unit 130 is wider than that of the laser unit 120 . Viewed from a top view, the recessed portion 208 is generally rectangular. The substrate 130 can be connected to the carrier board 110 through an adhesive portion of organic material or metal material. For organic materials and metallic materials, please refer to the descriptions in the relevant paragraphs above.

As shown in FIG. 4 , the handle 130 can be disposed on a first base 170 and connected with the carrier board 110 through the first base 170 . The thickness of the first base 170 can be used to adjust the distance between the base 130 and the carrier plate 110 . The material of the first base 170 includes insulating material or metallic material. Insulating materials include ceramics such as aluminum nitride, aluminum oxide or silicon carbide. Metal materials include gold, copper, aluminum, tungsten, tin or alloys of the above materials. The laser unit 120 can be disposed on a second base 190 and connected with the carrier board 110 through the second base 190 . The thickness of the second base 190 can be used to adjust the distance between the laser unit 120 and the carrier board 110 . The second base 170 may be made of the same material as the first base 170 . By utilizing the arrangement of the first base 170 and the second base 190, the light emitting surface 120s of the laser unit 120 faces the inclined surface 130s of the laser beam 130, and the horizontal height is between the first end p1 and the second end p2 of the inclined surface 130s. between. A vertical distance between a lower surface 130b of the laser unit 130 and a lower surface 120b of the laser unit 120 is between 150 μm and 200 μm.

In another embodiment of the invention, the lens 130 includes a wavelength converting material. In one embodiment, the laser unit 120 emits a blue laser light, which is converted by the wavelength conversion material of the lens 130 to generate white light, and then the white light is reflected to the lens, so that the laser element 100 emits a white laser light. This embodiment can be used in a laser car light source module or a backlight module, which has a smaller size and better heat dissipation effect.

The wavelength conversion material may include one or more inorganic phosphors, organic fluorescent colorants, semiconductor materials, or a combination of the above materials. Inorganic phosphor materials have particle sizes of 5 um ~ 100 um and include but are not limited to yellow-green phosphors and red phosphors. The wavelength conversion material that can be combined with blue laser light to emit white light may be yellow-green phosphor. The components of the yellow-green phosphor are, for example, aluminum oxides (such as yttrium aluminum garnet (YAG) or yttrium aluminum garnet (TAG)), silicates, vanadates, alkaline earth metal selenides, or metal nitrides. . The wavelength conversion material that can absorb blue light and emit red light can be red phosphor. The components of red phosphor are, for example, fluoride (K ₂ TiF ₆ :Mn ⁴⁺ , K ₂ SiF ₆ :Mn ⁴⁺ ), silicate, vanadate, alkaline earth metal sulfide (CaS), and metal oxynitride , or tungsten-molybdate family mixture. Semiconductor materials include nanocrystal semiconductor materials, such as quantum dot (quantum-dot) luminescent materials. Quantum dot luminescent materials can include zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), zinc oxide (ZnO), cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe) ), gallium nitride (GaN), gallium phosphide (GaP), gallium selenide (GaSe), gallium antimonide (GaSb), gallium arsenide (GaAs), aluminum nitride (AlN), aluminum phosphide (AlP) , aluminum arsenide (AlAs), indium phosphide (InP), indium arsenide (InAs), tellurium (Te), lead sulfide (PbS), indium antimonide (InSb), lead telluride (PbTe), lead selenide (PbSe), antimony telluride (SbTe), zinc cadmium selenide (ZnCdSeS), copper indium sulfide (CuInS), cesium lead chloride (CsPbCl ₃ ), cesium lead bromide (CsPbBr ₃ ), or cesium lead iodide ( CsPbI ₃ ). .

As shown in FIG. 4 , the second base 190 includes a first side 190 s facing the base 130 . In order to prevent the light beam L of the laser unit 120 from being reflected by the second base 190, the light exit surface 120s of the laser unit 120 protrudes from the first side surface 190s of the second base 190 at a distance D. In one embodiment, the distance D is between 0.5 μm and 15 μm, preferably between 2 μm and 13 μm, and more preferably between 5 μm and 10 μm.

Figure 5 is a cross-sectional view along line B-B' in Figure 3. Figure 6 is a cross-sectional view along line CC' in Figure 3. A first conductive connection part 204 and a second conductive connection part 304 penetrate the carrier board 110 . As shown in FIGS. 5 and 6 , the first metal electrode 200 covers the first conductive connection part 204 , and the second metal electrode 300 covers the second conductive connection part 304 . A first external electrode 500 and a second external electrode 600 are located on the lower surface 112 of the carrier 110 . The first external electrode 500 is electrically connected to the laser unit 120 through the first conductive connection portion 204 and the first metal electrode 200 . The second external electrode 600 is electrically connected to the laser unit 120 through the second conductive connection part 304, the second metal electrode 300, and the bonding wire 301.

In one variation of the invention, in order to increase the electrical and thermal conductive area, as shown in Figure 3B, a plurality of first conductive connection parts 204 are respectively located under the first metal body part 201 and the first metal bearing part 202. The second conductive connection parts 304 are respectively located under the second metal bearing part 302 and the second metal extension part 303.

As shown in FIG. 6 , the laser unit 120 and the second base 190 can be colloidally adhered to the first metal electrode 200 . Preferably, the laser unit 120 is disposed on the first metal body part 201 . One electrode of the laser unit 120, such as the n electrode, is electrically connected to the first external electrode 500 through the first metal electrode 200 and the first conductive connection portion 204. The other electrode of the laser unit 120, such as the p electrode, is connected to the second metal electrode 300 through the bonding wire 301, and then is electrically connected to the first external electrode 600 through the second metal electrode 300 and the second conductive connection part 304. .

When the laser unit 120 is disposed on the first metal body part 201, in order to increase the heat conduction area, the area of the first metal body part 201 is larger than the first metal carrying part 204.

In addition to being electrically connected to the laser unit 120, the first metal electrode 200 and the second metal electrode 300 can also be used for heat conduction. The materials of the first metal electrode 200 and the second metal electrode 300 include gold, copper, aluminum, iron, or alloys of the above materials.

In addition to connecting the laser element 100 to an external power supply, the first external electrode 500 and the second external electrode 600 can also be used for heat conduction. The material of the first external electrode 500 and the second external electrode 600 includes metal, such as gold, copper, aluminum, iron, or alloys of the above materials.

The first external electrode 500 and the second external electrode 600 may include the same metal material as the fence 140 , such as gold, copper, aluminum, tungsten, tin or alloys of the above materials.

As shown in Figures 3 to 6, the electronic component 180 can be a photosensitive diode, an anti-static diode, a reverse bias protection diode, a capacitor, a transistor, an integrated circuit, or a surge suppression capacitor. In this embodiment, the electronic component 180 is a reverse bias protection diode for explanation. The reverse bias protection diode is a semiconductor element with a p electrode and an n electrode, which is electrically connected to the p electrode and n electrode of the laser unit 120 in an anti-parallel manner, so that the laser unit 120 will not be affected by excessive application. voltage and be destroyed.

As shown in FIG. 5 , the electronic component 180 is disposed on the first metal carrying part 202 of the first metal electrode 200 and the second metal carrying part 302 of the second metal electrode 300 . One electrode of the electronic component 180 , such as the p electrode, is electrically connected to the first external electrode 500 through the first metal electrode 200 and the first conductive connection portion 204 . Another electrode of the electronic component 180, such as the n electrode, is electrically connected to the second external electrode 600 through the second metal electrode 300 and the second conductive connection portion 304.

FIG. 7 is an optical path diagram of a laser element 100 disclosed according to another embodiment of the present invention. As shown in FIG. 7 , the lens 130 is a concave mirror, and the laser unit 120 is disposed on a focal point 130f or a focal plane 130fp of the concave mirror. The lens 130 is used to collimate the light beam _LS emitted by the laser unit 120 into a parallel light beam _LP . In this embodiment, when the laser unit 120 emits the light beam _LS along a first traveling direction and directly projects it on the concave surface of the laser beam 130. The concave surface of the beam 130 changes the light beam _LS having a first beam size from a first traveling direction to a second traveling direction, and collimates the light beam _LS into a parallel beam _LP having a second beam size. In this embodiment, the lens of the laser element may be a plane lens (not shown).

Figure 8 is an optical path diagram of a laser element 100 disclosed according to another embodiment of the present invention. As shown in Figure 8, when the lens 130 is a plano-convex lens, a meniscus lens or a bi-convex lens, the laser unit 120 is located at the focus or focal plane of the plano-convex lens or bi-convex lens to convert the light beam L emitted by the laser unit 120 _S is collimated into a parallel beam L _P . The focal length between the focus of the convex lens and the center of the convex lens is between 50 μm and 300 μm, preferably between 100 μm and 150 μm. In this embodiment, when the laser unit 120 emits the light beam _LS along the first traveling direction. The light beam _LS with the first beam size passes through the plano-convex lens, the meniscus lens or the biconvex lens and is collimated into a parallel beam _LP with the second beam size, and then is emitted through the plane lens 150 . In one embodiment, the second beam size is smaller than the first beam size.

In a variation of this embodiment, as shown in FIG. 8 , the laser element 100 includes a reflecting mirror located in the traveling direction of the parallel light beam L'. After being reflected by the reflecting mirror 160 , the parallel light beam L′ changes from the first traveling direction to the second traveling direction, and then is emitted through the lens 150 .

Each embodiment listed in the present invention is only used to illustrate the present invention and is not intended to limit the scope of the present invention. Any obvious modifications or changes made by anyone to the present invention shall not depart from the spirit and scope of the present invention.

10: Laser packaging 11:Packaging shell 12:Heating block 13:Laser diode 14:Electrode unit 15:Glass lens 100:Laser components 110: Carrier board 111: Upper surface 112: Lower surface 120:Laser unit 120b: Lower surface 120s: light-emitting surface 130:稜顡 130b: Lower surface 130f: focus 130fp: focal plane 130s: Incline 140:fence 150:Lens 150c: Center point 150p: light side 150s: light incident side 160:Reflector 170:First pedestal 190:Second pedestal 180:Electronic components 200: First metal electrode 201:First Metal Main Body Department 190s: first side 202: First metal bearing part 203: First metal extension 204: First conductive connection part 208: concave part 300: Second metal electrode 301:Welding wire 302: Second metal bearing part 303: Second metal extension 304: Second conductive connection part 500: first external electrode 600: Second external electrode D, N1, N2, N3: Spacing L, LS, LP: beam L': parallel beam L1: first long side L2: the second long side P: length p1: first end p2: second end S1: first short side S2: Second short side H: height V: chamber m: distance

Figure 1 is a cross-sectional view of a conventional laser package 10. Figure 2 is a schematic diagram of a laser element 100 disclosed according to an embodiment of the present invention. Figure 3 is a top view of a laser element 100 disclosed according to an embodiment of the present invention. Figure 3A is a structural relationship diagram of a lens and a lens according to an embodiment of the present invention. Figure 3B is a top view of a partial structure of the laser element 100. Figure 4 is a cross-sectional view along line AA' in Figure 3. Figure 5 is a cross-sectional view along line B-B' in Figure 3. Figure 6 is a cross-sectional view along line CC' in Figure 3. Figure 7 is an optical path diagram of a laser element 100 disclosed according to an embodiment of the present invention. Figure 8 is an optical path diagram of a laser element 100 disclosed according to an embodiment of the present invention.

100:Laser components

110: Carrier board

111: Upper surface

112: Lower surface

120b: Lower surface

120s: light-emitting surface

130:稜顡

130b: Lower surface

130s: Incline

140:fence

150:Lens

150s: light incident side

150p: light side

170:First pedestal

190:Second pedestal

180:Electronic components

200: First metal electrode

201:First Metal Main Body Department

190s: first side

500: first external electrode

L: beam

L': parallel beam

D: spacing

H: height

P: length

m: distance

Claims (10)

A laser element, including: a carrier plate, including an upper surface; a laser unit, located on the upper surface of the carrier plate, having a light-emitting surface; and a lens, disposed on the upper surface of the carrier plate , used to change a traveling direction of a beam emitted by the laser unit; a base, located between the laser unit and the carrier plate, and having a side facing the frame; a fence provided on the carrier plate The upper surface surrounds the laser unit and the lens; and a lens is located on the fence, directly covering the fence, the laser unit and the lens, wherein the light-emitting surface protrudes from the side. The laser element as described in item 1 of the patent application further includes a first metal electrode and a second metal electrode spaced apart from each other on the upper surface, the first metal electrode being larger than the second metal electrode, and The laser unit is located on the first metal electrode. The laser component described in item 2 of the patent application further includes a first external electrode and a second external electrode located on the lower surface of the carrier plate, the first external electrode being smaller than the second external electrode, and The first metal electrode is electrically connected to the first external electrode. As for the laser component described in item 1 of the patent application, the lens is a reflective mirror, a concave mirror or a convex lens. As for the laser element described in item 4 of the patent application, the laser unit is located at a focal point or a focal plane of the concave mirror or the convex lens. For the laser component described in Item 1 of the patent application, the carrier plate contains aluminum nitride, aluminum oxide or silicon carbide. For the laser component described in item 1 of the patent application, the fence contains metal material. For example, in the laser element described in Item 1 of the patent application, the light-emitting surface protrudes from the side surface at a distance between 5 μm and 10 μm. As for the laser element described in Item 1 of the patent application, there is a first-level difference between a lower surface of the barrel and a lower surface of the laser unit. For the laser element described in item 1 of the patent application, the laser element contains a wavelength conversion material.

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