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TWI831224B - Metal-oxide-metal capacitor structure - Google Patents

Metal-oxide-metal capacitor structure Download PDF

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TWI831224B
TWI831224B TW111119760A TW111119760A TWI831224B TW I831224 B TWI831224 B TW I831224B TW 111119760 A TW111119760 A TW 111119760A TW 111119760 A TW111119760 A TW 111119760A TW I831224 B TWI831224 B TW I831224B
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metal
electrode
metal lines
finger
lines
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TW202347800A (en
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游思穎
陳世彬
張展源
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瑞昱半導體股份有限公司
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Abstract

The disclosure provides a metal-oxide-metal capacitor structure, which includes at least a first finger electrode structure and a second finger electrode structure. The first finger electrode structure includes a plurality of first metal lines and a first electrode. The first metal lines extend along a first direction, and the first electrode extends along a second direction and is connected to the first metal lines. The second finger electrode structure includes a plurality of second metal lines and a second electrode. The second metal lines extend along the first direction, and the second electrode extends along the second direction and is connected to the second metal lines. The first metal lines and the second metal lines are staggered each other and arranged between the first electrodes and the second electrodes, so that each first metal line is located between every two adjacent second metal lines.

Description

金屬氧化物金屬電容結構Metal oxide metal capacitor structure

本案係有關一種半導體電容結構,特別是關於一種金屬氧化物金屬(metal oxide metal,MOM)電容結構。This case relates to a semiconductor capacitor structure, specifically a metal oxide metal (MOM) capacitor structure.

在積體電路的佈局中,電容通常扮演一個重要的角色,其中因為金屬氧化物金屬電容結構具有低電容漏失的優點而廣受使用。圖1為習知金屬氧化物金屬電容結構的結構示意圖,如圖1所示,習知之金屬氧化物金屬電容結構40包括一第一指狀電極結構42及第二指狀電極結構44,第一指狀電極結構42包含複數條第一金屬線421,第二指狀電極結構44包含複數條第二金屬線441,且第一金屬線421及第二金屬線441彼此穿插交錯,以呈現第一金屬線421、第二金屬線441、第一金屬線421、第二金屬線441…的交錯結構。Capacitors usually play an important role in the layout of integrated circuits, and metal oxide capacitor structures are widely used because of their low capacitance leakage. FIG. 1 is a schematic structural diagram of a conventional metal oxide metal capacitor structure. As shown in FIG. 1 , the conventional metal oxide metal capacitor structure 40 includes a first finger-like electrode structure 42 and a second finger-like electrode structure 44. The first The finger electrode structure 42 includes a plurality of first metal lines 421, the second finger electrode structure 44 includes a plurality of second metal lines 441, and the first metal lines 421 and the second metal lines 441 are interlaced with each other to present the first A staggered structure of metal lines 421, second metal lines 441, first metal lines 421, second metal lines 441....

在習知技術中,如圖2所示,二顆金屬氧化物金屬電容結構40、40’排列在一起時,為符合間隔規則(Spacing Rule),金屬氧化物金屬電容結構40與金屬氧化物金屬電容結構40’兩者之間的距離必須維持一固定的間隔D而無法縮小,再者,若有二顆或二顆以上的金屬氧化物金屬電容結構40、40’時,作為正極端的第一指狀電極結構42、42’要接收不同訊號,作為負極端的第二指狀電極結構44、44’要接收相同訊號,此時因為第一金屬線421、421’或第二金屬線441、441’不能共用以及固定間隔D的存在,而增加了整體面積的使用,且在排列上也會有諸多限制,無法因應半導體尺寸向下微縮與電路密度增加的趨勢。In the conventional technology, as shown in Figure 2, when two metal oxide metal capacitor structures 40 and 40' are arranged together, in order to comply with the spacing rule (Spacing Rule), the metal oxide metal capacitor structure 40 and the metal oxide metal capacitor structure 40 are arranged together. The distance between the capacitor structures 40' must maintain a fixed distance D and cannot be reduced. Furthermore, if there are two or more metal oxide metal capacitor structures 40, 40', the third one as the positive terminal One finger electrode structure 42, 42' needs to receive different signals, and the second finger electrode structure 44, 44' serving as the negative terminal needs to receive the same signal. At this time, because the first metal line 421, 421' or the second metal line 441 , 441' cannot be shared and the existence of fixed spacing D increases the use of the overall area, and there are many restrictions on the arrangement, which cannot cope with the downward shrinkage of semiconductor dimensions and the increase in circuit density.

本案提供一種金屬氧化物金屬電容結構,包含至少一第一指狀電極結構以及一第二指狀電極結構。第一指狀電極結構包含複數第一金屬線及一第一電極,該些第一金屬線沿著一第一方向延伸,第一電極沿著一第二方向延伸且連接該些第一金屬線。第二指狀電極結構包含複數第二金屬線及一第二電極,該些第二金屬線沿著第一方向延伸,第二電極沿著第二方向延伸且連接該些第二金屬線,該些第一金屬線與該些第二金屬線係彼此交錯並排而位於第一電極及第二電極之間,使每一第一金屬線位於每二相鄰之第二金屬線之間。This application provides a metal oxide metal capacitor structure, including at least a first finger-shaped electrode structure and a second finger-shaped electrode structure. The first finger electrode structure includes a plurality of first metal lines and a first electrode. The first metal lines extend along a first direction. The first electrode extends along a second direction and connects the first metal lines. . The second finger electrode structure includes a plurality of second metal lines and a second electrode. The second metal lines extend along the first direction. The second electrode extends along the second direction and connects the second metal lines. The first metal lines and the second metal lines are interlaced and arranged side by side between the first electrode and the second electrode, so that each first metal line is located between every two adjacent second metal lines.

本案另外提供一種金屬氧化物金屬電容結構,包含複數第一指狀電極結構以及一第二指狀電極結構。每一第一指狀電極結構包含複數第一金屬線及一第一電極,該些第一金屬線沿著一第一方向延伸,第一電極沿著一第二方向延伸且連接該些第一金屬線。第二指狀電極結構包含複數第二金屬線及一第二電極,該些第二金屬線沿著第一方向延伸,第二電極沿著第二方向延伸且連接該些第二金屬線,以作為共用電極,所有該些第一金屬線與該些第二金屬線係彼此交錯並排而位於第一電極及第二電極之間,使每一第一金屬線位於每二相鄰之第二金屬線之間。This case also provides a metal oxide metal capacitor structure, including a plurality of first finger electrode structures and a second finger electrode structure. Each first finger electrode structure includes a plurality of first metal lines and a first electrode. The first metal lines extend along a first direction. The first electrode extends along a second direction and connects the first electrodes. metal wire. The second finger electrode structure includes a plurality of second metal lines and a second electrode. The second metal lines extend along the first direction. The second electrode extends along the second direction and connects the second metal lines. As a common electrode, all the first metal lines and the second metal lines are interlaced with each other and located between the first electrode and the second electrode, so that each first metal line is located between every two adjacent second metal lines. between lines.

在一些實施例中,所有該些第一金屬線之一第一總數量與該些第二金屬線之一第二總數量之總和係為單數。In some embodiments, the sum of a first total number of all the first metal lines and a second total number of the second metal lines is an odd number.

在一些實施例中,第一方向係垂直第二方向。In some embodiments, the first direction is perpendicular to the second direction.

在一些實施例中,每一第一電極係為正極,且第二電極係為負極。或是,其中每一第一電極係為負極,且第二電極係為正極。In some embodiments, each first electrode is a positive electrode and each second electrode is a negative electrode. Alternatively, each first electrode is a negative electrode and the second electrode is a positive electrode.

在一些實施例中,該些第一指狀電極結構更可透過複數第一導通孔連接至另一電極層之另一第一指狀電極結構;以及第二指狀電極結構更可透過複數第二導通孔連接至另一電極層之另一第二指狀電極結構。In some embodiments, the first finger-shaped electrode structures can be connected to another first finger-shaped electrode structure of another electrode layer through a plurality of first via holes; and the second finger-shaped electrode structure can be connected to another first finger-shaped electrode structure through a plurality of first via holes. The two via holes are connected to another second finger electrode structure of another electrode layer.

在一些實施例中,該些第一金屬線彼此間係具有相同距離,且該些第二金屬線彼此間係具有相同距離,且交錯並排的該些第一金屬線與該些第二金屬線彼此間亦具有相同距離。In some embodiments, the first metal lines have the same distance from each other, and the second metal lines have the same distance from each other, and the first metal lines and the second metal lines are staggered and side by side. They are also at the same distance from each other.

在一些實施例中,該些第一指狀電極結構更可分別位於第二指狀電極結構之相對二側邊,以共用第二指狀電極結構。In some embodiments, the first finger-shaped electrode structures may be located on two opposite sides of the second finger-shaped electrode structure respectively, so as to share the second finger-shaped electrode structure.

綜上所述,隨著半導體尺寸向下微縮與電路密度的增加,本案提出一種具有共用之第二指狀電極結構的金屬氧化物金屬電容結構,以便在維持相同電容量之前提下,可以有效縮減佔用積體電路面積。並且,本案在有二顆或二顆以上的金屬氧化物金屬電容結構排列時,因為共用第二指狀電極結構的作用,有助於面積的減少,且在排列上也較為彈性。基此,在晶片(chip)尺寸面積日趨縮小的條件下,本案有助於減少面積的使用來得到相同電容量,以達到面積利用率的提升。In summary, with the downward shrinkage of semiconductor dimensions and the increase in circuit density, this project proposes a metal oxide metal capacitor structure with a common second finger electrode structure, so that it can effectively maintain the same capacitance. Reduce the occupied integrated circuit area. Moreover, in this case, when two or more metal oxide metal capacitor structures are arranged, the shared second finger-shaped electrode structure helps to reduce the area, and the arrangement is also more flexible. Based on this, under the condition that the size and area of the chip (chip) is shrinking day by day, this case helps to reduce the use of area to obtain the same capacitance, so as to improve the area utilization rate.

以下提出較佳實施例進行詳細說明,然而,實施例僅用以作為範例說明,並不會限縮本案欲保護之範圍。此外,實施例中的圖式有省略部份元件或結構,以清楚顯示本案的技術特點。在這些圖式中,相同的標號表示相同或類似的元件或電路,必須瞭解的是,儘管術語“第一”、“第二”等在本文中可以用於描述各種元件、部件、區域或功能,但是這些元件、部件、區域及/或功能不應受這些術語的限制,這些術語僅用於將一個元件、部件、區域或功能與另一個元件、部件、區域或功能區隔開來。Preferred embodiments are provided below for detailed description. However, the embodiments are only used as examples and will not limit the scope of the present case. In addition, some components or structures are omitted in the drawings of the embodiments to clearly illustrate the technical features of the present invention. In the drawings, the same reference numbers refer to the same or similar elements or circuits, it is understood that although the terms "first", "second", etc. may be used herein to describe various elements, components, regions or functions , but these elements, components, regions and/or functions should not be limited by these terms, which are only used to distinguish one element, component, region or function from another element, component, region or function.

圖3為根據本案一實施例之金屬氧化物金屬電容結構的結構示意圖,請參閱圖3所示,一金屬氧化物金屬電容結構10包含至少一第一指狀電極結構12以及一第二指狀電極結構14,在本實施例中,係以一個第一指狀電極結構12為例。第一指狀電極結構12包含複數第一金屬線121及一第一電極122,該些第一金屬線121彼此平行且沿著一第一方向延伸,第一電極122沿著一第二方向延伸且連接該些第一金屬線121。第二指狀電極結構14包含複數第二金屬線141及一第二電極142,該些第二金屬線141彼此平行且沿著第一方向延伸,第二電極142沿著第二方向延伸且連接該些第二金屬線141,該些第一金屬線121與該些第二金屬線141係彼此交錯並排而位於第一電極122及第二電極142之間,使每一第一金屬線121位於每二相鄰之第二金屬線141之間。其中,第一方向係垂直於第二方向,使第一電極122垂直連接第一金屬線121及第二電極142垂直連接第二金屬線141。Figure 3 is a schematic structural diagram of a metal oxide metal capacitor structure according to an embodiment of the present invention. Please refer to Figure 3. As shown in Figure 3, a metal oxide metal capacitor structure 10 includes at least a first finger-shaped electrode structure 12 and a second finger-shaped electrode structure. The electrode structure 14, in this embodiment, takes a first finger-shaped electrode structure 12 as an example. The first finger electrode structure 12 includes a plurality of first metal lines 121 and a first electrode 122. The first metal lines 121 are parallel to each other and extend along a first direction. The first electrode 122 extends along a second direction. And connect the first metal lines 121 . The second finger electrode structure 14 includes a plurality of second metal lines 141 and a second electrode 142. The second metal lines 141 are parallel to each other and extend along the first direction. The second electrode 142 extends along the second direction and is connected. The second metal lines 141, the first metal lines 121 and the second metal lines 141 are staggered and arranged side by side and are located between the first electrode 122 and the second electrode 142, so that each first metal line 121 is located between every two adjacent second metal lines 141 . The first direction is perpendicular to the second direction, so that the first electrode 122 is vertically connected to the first metal line 121 and the second electrode 142 is vertically connected to the second metal line 141 .

如圖3所示,在第一指狀電極結構12中之第一金屬線121彼此間係具有相同距離,且在第二指狀電極結構14中之第二金屬線141彼此間係具有相同距離,且交錯並排的第一金屬線121與第二金屬線141彼此間亦同樣具有相同距離,使第一金屬線121與第二金屬線141彼此不互相連接。As shown in FIG. 3 , the first metal lines 121 in the first finger electrode structure 12 have the same distance from each other, and the second metal lines 141 in the second finger electrode structure 14 have the same distance from each other. , and the first metal wires 121 and the second metal wires 141 that are staggered side by side also have the same distance from each other, so that the first metal wires 121 and the second metal wires 141 are not connected to each other.

其中,在此金屬氧化物金屬電容結構10中,所有第一金屬線121之一第一總數量與所有第二金屬線141之一第二總數量之總和係為單數(奇數)。在如圖3所示之本實施例中,第一金屬線121之第一總數量係為4,第二金屬線141之第二總數量係為5,所以第一總數量與第二總數量之總和係為9,為一個單數。再者,由於第二金屬線141之第二總數量大於第一金屬線121之第一總數量,所以可以使每一第一金屬線121各別位於每二相鄰之第二金屬線141之間,且第二金屬線141中的其中二條會位於最外側。Wherein, in the metal oxide metal capacitor structure 10 , the sum of a first total number of all first metal lines 121 and a second total number of all second metal lines 141 is an odd number (odd number). In the present embodiment as shown in FIG. 3 , the first total number of the first metal lines 121 is 4, and the second total number of the second metal lines 141 is 5. Therefore, the first total number and the second total number are The sum is 9, which is an odd number. Furthermore, since the second total number of the second metal lines 141 is greater than the first total number of the first metal lines 121, each first metal line 121 can be positioned between every two adjacent second metal lines 141. space, and two of the second metal lines 141 will be located on the outermost side.

在一實施例中,第一指狀電極結構12(包含第一金屬線121及第一電極122)及第二指狀電極結構14(包含第二金屬線141及第二電極142)之材料可為任何適用於製作電容結構的金屬材料,例如,鋁、銅、銀、鎢等,但本案不以此為限。In one embodiment, the materials of the first finger electrode structure 12 (including the first metal line 121 and the first electrode 122) and the second finger electrode structure 14 (including the second metal line 141 and the second electrode 142) can be It can be any metal material suitable for making capacitor structures, such as aluminum, copper, silver, tungsten, etc., but this case is not limited to this.

在一實施例中,第一電極122係為正極,則第二電極142係為負極,以分別具有相反的電性。在另一實施例中,第一電極122係為負極,則第二電極142係為正極,以依據設計需求來交換電性端點位置。In one embodiment, the first electrode 122 is a positive electrode, and the second electrode 142 is a negative electrode, so that they have opposite electrical properties. In another embodiment, the first electrode 122 is a negative electrode, and the second electrode 142 is a positive electrode, so that the electrical terminal positions are exchanged according to design requirements.

本案之金屬氧化物金屬電容結構10除了為二維的電容結構之外,本案之金屬氧化物金屬電容結構10更可為一三維堆疊的電容結構,其包含二層以上的電極層,例如三層、四層或更多層。金屬氧化物金屬電容結構10包含第一電極層16及第二電極層16’,本實施例係以具有二層之電極層為例來具體說明,請參閱圖4所示,第一電極層16包含第一指狀電極結構12以及第二指狀電極結構14,第二電極層16’位於第一電極層16下方,且第二電極層16’包含第一指狀電極結構12’以及第二指狀電極結構14’。其中,第一電極層16之第一指狀電極結構12係透過複數第一導通孔(via)18連接至第二電極層16’之第一指狀電極結構12’,使第一指狀電極結構12、12’共同具有相同的電性極性;第一電極層16之第二指狀電極結構14亦可透過複數第二導通孔20連接至第二電極層16’之第二指狀電極結構14’,使第二指狀電極結構14、14’共同具有相同的電性極性。有關第一指狀電極結構12、12’與第二指狀電極結構14、14’之其餘細部結構,則請參考前述說明,於此不再贅述。In addition to being a two-dimensional capacitor structure, the metal oxide capacitor structure 10 of the present application can also be a three-dimensional stacked capacitor structure, which includes more than two electrode layers, such as three layers. , four or more floors. The metal oxide metal capacitor structure 10 includes a first electrode layer 16 and a second electrode layer 16'. This embodiment takes an electrode layer with two layers as an example for detailed description. Please refer to the first electrode layer 16 shown in Figure 4. It includes a first finger electrode structure 12 and a second finger electrode structure 14. The second electrode layer 16' is located under the first electrode layer 16, and the second electrode layer 16' includes the first finger electrode structure 12' and a second finger electrode structure 14. Finger electrode structure 14'. Among them, the first finger electrode structure 12 of the first electrode layer 16 is connected to the first finger electrode structure 12' of the second electrode layer 16' through a plurality of first vias (vias) 18, so that the first finger electrode The structures 12 and 12' both have the same electrical polarity; the second finger-shaped electrode structure 14 of the first electrode layer 16 can also be connected to the second finger-shaped electrode structure of the second electrode layer 16' through a plurality of second via holes 20. 14', so that the second finger electrode structures 14 and 14' share the same electrical polarity. For the remaining detailed structures of the first finger electrode structures 12, 12' and the second finger electrode structures 14, 14', please refer to the foregoing description and will not be repeated here.

在一實施例中,如圖4所示,第一電極層16之第一指狀電極結構12與第二指狀電極結構14的佈局結構與數量係與第二電極層16’之第一指狀電極結構12’與第二指狀電極結構14’相同,且本案之金屬氧化物金屬電容結構10若包含二層以上的電極層,例如三層、四層或更多層,每一電極層都會具有相同的佈局結構與數量。In one embodiment, as shown in FIG. 4 , the layout structure and number of the first finger electrode structures 12 and the second finger electrode structures 14 of the first electrode layer 16 are the same as those of the first fingers of the second electrode layer 16 ′. The finger-shaped electrode structure 12' is the same as the second finger-shaped electrode structure 14', and if the metal oxide metal capacitor structure 10 of this case includes more than two electrode layers, such as three layers, four layers or more layers, each electrode layer will have the same layout structure and quantity.

圖5為根據本案再一實施例之金屬氧化物金屬電容結構的結構示意圖,請參閱圖5所示,一金屬氧化物金屬電容結構10包含複數第一指狀電極結構12、22、24以及一第二指狀電極結構14,在本實施例中,係以三個第一指狀電極結構12、22、24為例。第一指狀電極結構12包含複數第一金屬線121及一第一電極122,該些第一金屬線121彼此平行且沿著第一方向延伸,第一電極122沿著第二方向延伸且垂直連接該些第一金屬線121。第一指狀電極結構22位於第一指狀電極結構12一側,第一指狀電極結構22包含複數第一金屬線221及一第一電極222,該些第一金屬線221彼此平行且沿著第一方向延伸,第一電極222沿著第二方向延伸且垂直連接該些第一金屬線221。第一指狀電極結構24位於第一指狀電極結構22一側,第一指狀電極結構24包含複數第一金屬線241及一第一電極242,該些第一金屬線241彼此平行且沿著第一方向延伸,第一電極242沿著第二方向延伸且垂直連接該些第一金屬線241。第二指狀電極結構14包含複數第二金屬線141及一第二電極142,該些第二金屬線141彼此平行且沿著第一方向延伸,第二電極142沿著第二方向延伸且連接該些第二金屬線141,以作為共用電極,所有第一金屬線121、221、241與所有第二金屬線141係彼此交錯並排而分別位於第一電極122、222、242及第二電極142之間,使每一第一金屬線121、221、241位於每二相鄰之第二金屬線141之間。Figure 5 is a schematic structural diagram of a metal oxide metal capacitor structure according to another embodiment of the present invention. Please refer to Figure 5. As shown in Figure 5, a metal oxide metal capacitor structure 10 includes a plurality of first finger electrode structures 12, 22, 24 and a The second finger electrode structure 14, in this embodiment, takes three first finger electrode structures 12, 22, and 24 as an example. The first finger electrode structure 12 includes a plurality of first metal lines 121 and a first electrode 122. The first metal lines 121 are parallel to each other and extend along the first direction. The first electrode 122 extends along the second direction and is vertical. Connect the first metal lines 121 . The first finger electrode structure 22 is located on one side of the first finger electrode structure 12. The first finger electrode structure 22 includes a plurality of first metal lines 221 and a first electrode 222. The first metal lines 221 are parallel to each other and along the The first electrode 222 extends along the first direction and vertically connects the first metal lines 221 along the second direction. The first finger electrode structure 24 is located on one side of the first finger electrode structure 22. The first finger electrode structure 24 includes a plurality of first metal lines 241 and a first electrode 242. The first metal lines 241 are parallel to each other and along the The first electrode 242 extends along the first direction and vertically connects the first metal lines 241 along the second direction. The second finger electrode structure 14 includes a plurality of second metal lines 141 and a second electrode 142. The second metal lines 141 are parallel to each other and extend along the first direction. The second electrode 142 extends along the second direction and is connected. The second metal lines 141 serve as common electrodes. All the first metal lines 121, 221, 241 and all the second metal lines 141 are staggered and arranged side by side and are respectively located at the first electrodes 122, 222, 242 and the second electrode 142. so that each first metal line 121, 221, 241 is located between every two adjacent second metal lines 141.

如圖5所示,在第一指狀電極結構12、22、24中之所有第一金屬線121、221、241彼此間係具有相同距離,且在第二指狀電極結構14中之第二金屬線141彼此間係具有相同距離,且交錯並排的第一金屬線121、221、241與第二金屬線141彼此間亦同樣具有相同距離,使第一金屬線121、221、241與第二金屬線141彼此不互相連接。As shown in FIG. 5 , all the first metal lines 121 , 221 , and 241 in the first finger electrode structures 12 , 22 , and 24 have the same distance from each other, and the second metal lines 121 , 221 , and 241 in the second finger electrode structure 14 have the same distance from each other. The metal wires 141 are at the same distance from each other, and the staggered first metal wires 121, 221, 241 and the second metal wires 141 are also at the same distance from each other, so that the first metal wires 121, 221, 241 and the second metal wires 141 are at the same distance from each other. The metal wires 141 are not connected to each other.

其中,在此金屬氧化物金屬電容結構10中,所有第一金屬線121、221、241之一第一總數量與所有第二金屬線141之一第二總數量之總和係為單數。在如圖5所示之實施例中,第一金屬線121之數量為4,第一金屬線221之數量為4,第一金屬線241的數量為4,所以第一總數量係為12,第二金屬線141之第二總數量係為13,所以第一總數量與第二總數量之總和係為25,為一個單數。再者,由於第二金屬線141之第二總數量大於所有第一金屬線121、221、241之第一總數量,所以可以使每一第一金屬線121、221、241各別位於每二相鄰之第二金屬線141之間,且第二金屬線141中的其中二條會位於最外側,中間之第二金屬線141’為第一指狀電極結構12、22所共用,中間之第二金屬線141”則為第一指狀電極結構22、24所共用。In the metal oxide metal capacitor structure 10 , the sum of a first total number of all first metal lines 121 , 221 , 241 and a second total number of all second metal lines 141 is an odd number. In the embodiment shown in FIG. 5 , the number of the first metal wires 121 is 4, the number of the first metal wires 221 is 4, and the number of the first metal wires 241 is 4, so the first total number is 12. The second total number of the second metal wires 141 is 13, so the sum of the first total number and the second total number is 25, which is an odd number. Furthermore, since the second total number of the second metal lines 141 is greater than the first total number of all the first metal lines 121, 221, 241, each first metal line 121, 221, 241 can be located at every two Between the adjacent second metal lines 141, and two of the second metal lines 141 will be located on the outermost side, the middle second metal line 141' is shared by the first finger electrode structures 12 and 22, and the middle second metal line 141' is shared by the first finger electrode structures 12 and 22. The two metal lines 141″ are shared by the first finger electrode structures 22 and 24.

在一實施例中,若金屬氧化物金屬電容結構10之正極端要接相同訊號,負極端要接不同訊號,則第一電極122、222、242係分別為負極,則第二電極142係為共用之正極。若金屬氧化物金屬電容結構10之正極端要接不同訊號,負極端要接相同訊號,則第一電極122、222、242係分別為正極,則第二電極142係為共用之負極。In one embodiment, if the positive terminal of the metal oxide metal capacitor structure 10 is to be connected to the same signal and the negative terminal is to be connected to different signals, then the first electrodes 122, 222, and 242 are negative electrodes respectively, and the second electrode 142 is Common positive pole. If the positive terminals of the metal oxide metal capacitor structure 10 are connected to different signals and the negative terminals are connected to the same signal, then the first electrodes 122, 222, and 242 are respectively positive electrodes, and the second electrode 142 is a common negative electrode.

圖6為根據本案又一實施例之金屬氧化物金屬電容結構的結構示意圖,請參閱圖6所示,一金屬氧化物金屬電容結構10包含複數個第一指狀電極結構12、22、24、26、28、30以及一第二指狀電極結構14,在本實施例中,係以六個第一指狀電極結構12、22、24、26、28、30為例,且分別位於第二指狀電極結構14之相對二側邊,以共用第二指狀電極結構14。如圖6所示,第一指狀電極結構12包含複數第一金屬線121及一第一電極122,該些第一金屬線121彼此平行且沿著第一方向延伸,第一電極122沿著第二方向延伸且垂直連接該些第一金屬線121。第一指狀電極結構22位於第一指狀電極結構12的一側,第一指狀電極結構22包含複數第一金屬線221及一第一電極222,該些第一金屬線221彼此平行且沿著第一方向延伸,第一電極222沿著第二方向延伸且垂直連接該些第一金屬線221。第一指狀電極結構24位於第一指狀電極結構22的一側,第一指狀電極結構24包含複數第一金屬線241及一第一電極242,該些第一金屬線241彼此平行且沿著第一方向延伸,第一電極242沿著第二方向延伸且垂直連接該些第一金屬線241。第一指狀電極結構26對稱於第一指狀電極結構12,第一指狀電極結構26包含複數第一金屬線261及一第一電極262,該些第一金屬線261彼此平行且沿著第一方向延伸,第一電極262沿著第二方向延伸且垂直連接該些第一金屬線261。第一指狀電極結構28位於第一指狀電極結構26的一側且對稱於第一指狀電極結構22,第一指狀電極結構28包含複數第一金屬線281及一第一電極282,該些第一金屬線281彼此平行且沿著第一方向延伸,第一電極282沿著第二方向延伸且垂直連接該些第一金屬線281。第一指狀電極結構30位於第一指狀電極結構28的一側且對稱於第一指狀電極結構24,第一指狀電極結構30包含複數第一金屬線301及一第一電極302,該些第一金屬線301彼此平行且沿著第一方向延伸,第一電極302沿著第二方向延伸且垂直連接該些第一金屬線301。第二指狀電極結構14位於第一指狀電極結構12、22、24與第一指狀電極結構26、28、30之間,第二指狀電極結構14包含複數第二金屬線141及一第二電極142,該些第二金屬線141彼此平行且沿著第一方向延伸,第二電極142沿著第二方向延伸且垂直連接於該些第二金屬線141中間,使第一指狀電極結構12、22、24與第一指狀電極結構26、28、30分別位於第二電極142的相對二側邊,以作為共用電極,第一金屬線121、221、241與第二金屬線141之上半部係彼此交錯並排而分別位於第一電極122、222、242及第二電極142之間,且第一金屬線261、281、301與第二金屬線141之下半部係彼此交錯並排而位於第一電極262、282、302及第二電極142之間,使每一第一金屬線121、221、241、261、281、301位於每二相鄰之第二金屬線141之間。Figure 6 is a schematic structural diagram of a metal oxide metal capacitor structure according to another embodiment of the present invention. Please refer to Figure 6. As shown in Figure 6, a metal oxide metal capacitor structure 10 includes a plurality of first finger electrode structures 12, 22, 24, 26, 28, 30 and a second finger-like electrode structure 14. In this embodiment, six first finger-like electrode structures 12, 22, 24, 26, 28, 30 are taken as an example, and they are respectively located at the second The two opposite sides of the finger electrode structure 14 share the second finger electrode structure 14 . As shown in FIG. 6 , the first finger electrode structure 12 includes a plurality of first metal lines 121 and a first electrode 122 . The first metal lines 121 are parallel to each other and extend along the first direction. The first electrode 122 extends along the first direction. The second direction extends and vertically connects the first metal lines 121 . The first finger electrode structure 22 is located on one side of the first finger electrode structure 12. The first finger electrode structure 22 includes a plurality of first metal lines 221 and a first electrode 222. The first metal lines 221 are parallel to each other and Extending along the first direction, the first electrode 222 extends along the second direction and vertically connects the first metal lines 221 . The first finger electrode structure 24 is located on one side of the first finger electrode structure 22. The first finger electrode structure 24 includes a plurality of first metal lines 241 and a first electrode 242. The first metal lines 241 are parallel to each other. Extending along the first direction, the first electrode 242 extends along the second direction and vertically connects the first metal lines 241 . The first finger electrode structure 26 is symmetrical to the first finger electrode structure 12. The first finger electrode structure 26 includes a plurality of first metal lines 261 and a first electrode 262. The first metal lines 261 are parallel to each other and along the The first electrode 262 extends along the second direction and vertically connects the first metal lines 261 . The first finger electrode structure 28 is located on one side of the first finger electrode structure 26 and is symmetrical to the first finger electrode structure 22. The first finger electrode structure 28 includes a plurality of first metal lines 281 and a first electrode 282. The first metal lines 281 are parallel to each other and extend along the first direction. The first electrodes 282 extend along the second direction and are vertically connected to the first metal lines 281 . The first finger electrode structure 30 is located on one side of the first finger electrode structure 28 and is symmetrical to the first finger electrode structure 24. The first finger electrode structure 30 includes a plurality of first metal lines 301 and a first electrode 302. The first metal lines 301 are parallel to each other and extend along the first direction. The first electrodes 302 extend along the second direction and are vertically connected to the first metal lines 301 . The second finger electrode structure 14 is located between the first finger electrode structures 12, 22, 24 and the first finger electrode structures 26, 28, 30. The second finger electrode structure 14 includes a plurality of second metal lines 141 and a The second electrode 142, the second metal lines 141 are parallel to each other and extend along the first direction. The second electrode 142 extends along the second direction and is vertically connected between the second metal lines 141, so that the first finger-shaped The electrode structures 12, 22, 24 and the first finger electrode structures 26, 28, 30 are respectively located on opposite sides of the second electrode 142 to serve as a common electrode. The first metal lines 121, 221, 241 and the second metal lines The upper half of the first metal lines 261, 281, 301 and the second metal line 141 are interlaced with each other and are located between the first electrodes 122, 222, 242 and the second electrode 142 respectively. staggered and arranged side by side between the first electrodes 262, 282, 302 and the second electrode 142, so that each first metal line 121, 221, 241, 261, 281, 301 is located between every two adjacent second metal lines 141 between.

如圖6所示,由於第一指狀電極結構12、22、24與第一指狀電極26、28、30分別位於第二指狀電極結構14之上下相對二側邊,所以可以共用第二指狀電極結構14,減少第二指狀電極結構14的佈局,以減少面積與繞線的空間。As shown in FIG. 6 , since the first finger electrode structures 12 , 22 , 24 and the first finger electrodes 26 , 28 , 30 are respectively located on the upper and lower opposite sides of the second finger electrode structure 14 , they can share the second finger electrode structure 14 . The finger electrode structure 14 reduces the layout of the second finger electrode structure 14 to reduce the area and winding space.

在如圖6所示之實施例中,位於上半部的第一金屬線121之數量為4、第一金屬線221之數量為4及第一金屬線241的數量為4,位於下半部的第一金屬線261之數量為4、第一金屬線281之數量為4及第一金屬線301的數量為4,所以第一總數量係為24,第二金屬線14之第二總數量係為13,所以第一總數量與第二總數量之總和係為37,確實為一個單數。基此,所有第一金屬線121、221、241、261、281、301之第一總數量與所有第二金屬線141之第二總數量之總和係為單數。In the embodiment shown in FIG. 6 , the number of the first metal lines 121 located in the upper half is 4, the number of the first metal lines 221 is 4, and the number of the first metal lines 241 is 4. The number of the first metal lines 241 located in the lower half is 4. The number of the first metal wires 261 is 4, the quantity of the first metal wires 281 is 4, and the quantity of the first metal wires 301 is 4, so the first total quantity is 24, and the second total quantity of the second metal wires 14 The system is 13, so the sum of the first total quantity and the second total quantity is 37, which is indeed an odd number. Based on this, the sum of the first total number of all the first metal lines 121, 221, 241, 261, 281, 301 and the second total number of all the second metal lines 141 is an odd number.

當然,圖5及圖6所示之金屬氧化物金屬電容結構10亦可設計為三維堆疊的電容結構,其包含二層以上的電極層,每一層電極層可以具有相同之佈局結構與數量,此部分請參閱前述圖4所記載之詳細說明,於此不再贅述。Of course, the metal oxide metal capacitor structure 10 shown in FIGS. 5 and 6 can also be designed as a three-dimensional stacked capacitor structure, which includes more than two electrode layers. Each electrode layer can have the same layout structure and number. Please refer to the detailed description recorded in the aforementioned Figure 4 for some details, and will not be repeated here.

在一實施例中,本案係以金屬氧化物金屬電容結構10實際佈局結構來進行說明,請同時參閱圖7所示,在相同電容量與相同數量下,藉由比較習知技術與本案之差異,來呈現出本案可以達到之效果。如圖7所示,以150個金屬氧化物金屬電容結構40、10排列時的面積為例,習知金屬氧化物金屬電容結構40之佈局面積為1073.43 µm 2,本案之金屬氧化物金屬電容結構10(如圖3所示,單一第一指狀電極結構配合共用之第二指狀電極結構可視為一個金屬氧化物金屬電容結構)使用共用的第二指狀電極結構,整個佈局面積縮減為775.45 µm 2,相較於習知金屬氧化物金屬電容結構40,本案之金屬氧化物金屬電容結構10的面積縮減率達到27.76%,故可以有效縮小佈局佔用面積,符合未來積集度愈來愈高的趨勢。 In one embodiment, the present case is explained based on the actual layout structure of the metal oxide metal capacitor structure 10. Please also refer to FIG. 7. Under the same capacitance and the same quantity, by comparing the differences between the conventional technology and the present case , to show the effect that this case can achieve. As shown in Figure 7, taking the area when 150 metal oxide metal capacitor structures 40 and 10 are arranged as an example, the layout area of the conventional metal oxide metal capacitor structure 40 is 1073.43 μm 2 . The metal oxide metal capacitor structure of this case 10 (As shown in Figure 3, the single first finger electrode structure and the shared second finger electrode structure can be regarded as a metal oxide metal capacitor structure) Using the shared second finger electrode structure, the entire layout area is reduced to 775.45 µm 2 . Compared with the conventional metal oxide metal capacitor structure 40 , the area reduction rate of the metal oxide metal capacitor structure 10 in this case reaches 27.76%. Therefore, the layout occupied area can be effectively reduced, in line with the increasingly high concentration in the future. trend.

再者,如下表1所示,在50個金屬氧化物金屬電容結構的佈局時,整個電容結構的面積縮減率為24.02%,在200個金屬氧化物金屬電容結構的佈局時,整個電容結構的面積縮減率提高為28.46%,而增加至400個金屬氧化物金屬電容結構的佈局時,整個電容結構的面積縮減率達到29.01%。因此,隨著金屬氧化物金屬電容結構之數量逐漸遞增,整個電容結構的面積縮減率也會逐漸增加而愈來愈高。Furthermore, as shown in Table 1 below, when 50 metal oxide metal capacitor structures are laid out, the area reduction rate of the entire capacitor structure is 24.02%. When 200 metal oxide metal capacitor structures are laid out, the area reduction rate of the entire capacitor structure is 24.02%. The area reduction rate increased to 28.46%, and when the layout of 400 metal oxide metal capacitor structures was increased, the area reduction rate of the entire capacitor structure reached 29.01%. Therefore, as the number of metal oxide metal capacitor structures gradually increases, the area reduction rate of the entire capacitor structure will gradually increase and become higher and higher.

表1    面積差異對照表 數量 50 100 150 200 250 300 350 400 習知電容結構面積(µm 2) 340.4 706.92 1073.43 1443.16 1806.46 2163.92 2539.49 2906 本案之電容結構面積(µm 2) 258.63 512.41 775.45 1032.41 1292.28 1543.1 1809.1 2062 縮減率 24.02% 27.51% 27.76% 28.46% 28.46% 28.69% 28.76% 29.01% Table 1 Area difference comparison table quantity 50 100 150 200 250 300 350 400 Known capacitor structure area (µm 2 ) 340.4 706.92 1073.43 1443.16 1806.46 2163.92 2539.49 2906 Capacitor structure area of this case (µm 2 ) 258.63 512.41 775.45 1032.41 1292.28 1543.1 1809.1 2062 reduction rate 24.02% 27.51% 27.76% 28.46% 28.46% 28.69% 28.76% 29.01%

綜上所述,隨著半導體尺寸向下微縮與電路密度的增加,本案提出一種具有共用之第二指狀電極結構的金屬氧化物金屬電容結構,以便在維持相同電容量之前提下,可以有效縮減佔用積體電路面積。並且,本案在有二顆或二顆以上的金屬氧化物金屬電容結構排列時,因為共用第二指狀電極結構的作用,有助於面積的減少,且在排列上也較為彈性。基此,在晶片(chip)尺寸面積日趨縮小的條件下,本案有助於減少面積的使用來得到相同電容量,以達到面積利用率的提升。In summary, with the downward shrinkage of semiconductor dimensions and the increase in circuit density, this project proposes a metal oxide metal capacitor structure with a common second finger electrode structure, so that it can effectively maintain the same capacitance. Reduce the occupied integrated circuit area. Moreover, in this case, when two or more metal oxide metal capacitor structures are arranged, the shared second finger-shaped electrode structure helps to reduce the area, and the arrangement is also more flexible. Based on this, under the condition that the size and area of the chip (chip) is shrinking day by day, this case helps to reduce the use of area to obtain the same capacitance, so as to improve the area utilization rate.

以上所述的實施例僅係為說明本案的技術思想及特點,其目的在使熟悉此項技術者能夠瞭解本案的內容並據以實施,當不能以之限定本案的專利範圍,即大凡依本案所揭示的精神所作的均等變化或修飾,仍應涵蓋在本案的申請專利範圍內。The above-mentioned embodiments are only for illustrating the technical ideas and characteristics of this case. Their purpose is to enable those familiar with this technology to understand the contents of this case and implement them accordingly. However, they cannot be used to limit the patent scope of this case. That is, generally speaking, according to this case Equal changes or modifications made to the spirit disclosed should still be covered by the patent application scope of this case.

10:金屬氧化物金屬電容結構 12,12’:第一指狀電極結構 121:第一金屬線 122:第一電極 14,14’:第二指狀電極結構 141,141’,141”:第二金屬線 142:第二電極 16:第一電極層 16’:第二電極層 18:第一導通孔 20:第二導通孔 22:第一指狀電極結構 221:第一金屬線 222:第一電極 24:第一指狀電極結構 241:第一金屬線 242:第一電極 26:第一指狀電極結構 261:第一金屬線 262:第一電極 28:第一指狀電極結構 281:第一金屬線 282:第一電極 30:第一指狀電極結構 301:第一金屬線 302:第一電極 40,40’:金屬氧化物金屬電容結構 42,42’:第一指狀電極結構 421,421’:第一金屬線 44,44’:第二指狀電極結構 441,441’:第二金屬線 D:間隔 10: Metal oxide metal capacitor structure 12,12’: first finger electrode structure 121:First metal wire 122:First electrode 14,14’: Second finger electrode structure 141,141’,141”: second metal wire 142:Second electrode 16: First electrode layer 16’: Second electrode layer 18: First via hole 20: Second via hole 22: First finger electrode structure 221:First metal wire 222: First electrode 24: First finger electrode structure 241:First metal wire 242:First electrode 26: First finger electrode structure 261:First metal wire 262:First electrode 28: First finger electrode structure 281:First metal wire 282:First electrode 30: First finger electrode structure 301:First metal wire 302: First electrode 40,40’: Metal oxide metal capacitor structure 42,42’: first finger electrode structure 421,421’: First metal line 44,44’: Second finger electrode structure 441,441’: Second metal wire D:interval

圖1為習知金屬氧化物金屬電容結構的結構示意圖。 圖2為習知金屬氧化物金屬電容結構的組合結構示意圖。 圖3為根據本案一實施例之金屬氧化物金屬電容結構的結構示意圖。 圖4為根據本案另一實施例之金屬氧化物金屬電容結構的結構示意圖。 圖5為根據本案再一實施例之金屬氧化物金屬電容結構的結構示意圖。 圖6為根據本案又一實施例之金屬氧化物金屬電容結構的結構示意圖。 圖7為習知金屬氧化物金屬電容結構與本案之金屬氧化物金屬電容結構的佈局結構示意圖。 Figure 1 is a schematic structural diagram of a conventional metal oxide metal capacitor structure. FIG. 2 is a schematic diagram of the combined structure of a conventional metal oxide metal capacitor structure. FIG. 3 is a schematic structural diagram of a metal oxide metal capacitor structure according to an embodiment of the present invention. FIG. 4 is a schematic structural diagram of a metal oxide metal capacitor structure according to another embodiment of the present invention. FIG. 5 is a schematic structural diagram of a metal oxide metal capacitor structure according to yet another embodiment of the present invention. FIG. 6 is a schematic structural diagram of a metal oxide metal capacitor structure according to another embodiment of the present invention. FIG. 7 is a schematic diagram of the layout structure of a conventional metal oxide metal capacitor structure and the metal oxide metal capacitor structure of the present invention.

10:金屬氧化物金屬電容結構 12:第一指狀電極結構 121:第一金屬線 122:第一電極 14:第二指狀電極結構 141:第二金屬線 142:第二電極 10: Metal oxide metal capacitor structure 12: First finger electrode structure 121:First metal wire 122:First electrode 14: Second finger electrode structure 141: Second metal wire 142:Second electrode

Claims (3)

一種金屬氧化物金屬電容結構,包含:複數第一指狀電極結構,每一該第一指狀電極結構包含複數第一金屬線及一第一電極,該些第一金屬線沿著一第一方向延伸,該第一電極沿著一第二方向延伸且連接該些第一金屬線;以及一第二指狀電極結構,包含複數第二金屬線及一第二電極,該些第二金屬線沿著該第一方向延伸,該第二電極沿著該第二方向延伸且連接該些第二金屬線,以作為共用電極,所有該些第一金屬線與該些第二金屬線係彼此交錯並排而位於該第一電極及該第二電極之間,使每一該第一金屬線位於每二相鄰之該第二金屬線之間;其中該第二金屬線之一第二總數量大於所有該第一金屬線之一第一總數量。 A metal oxide metal capacitor structure includes: a plurality of first finger electrode structures, each of the first finger electrode structures includes a plurality of first metal lines and a first electrode, and the first metal lines are along a first direction extending, the first electrode extends along a second direction and connects the first metal lines; and a second finger-shaped electrode structure includes a plurality of second metal lines and a second electrode, the second metal lines Extending along the first direction, the second electrode extends along the second direction and connects the second metal lines as a common electrode, and all the first metal lines and the second metal lines intersect with each other. arranged side by side between the first electrode and the second electrode, so that each first metal line is located between every two adjacent second metal lines; wherein a second total number of the second metal lines is greater than A first total number of all the first metal lines. 如請求項1所述之金屬氧化物金屬電容結構,其中所有該些第一金屬線之該第一總數量與該些第二金屬線之該第二總數量之總和係為單數。 The metal oxide metal capacitor structure as claimed in claim 1, wherein the sum of the first total number of all the first metal lines and the second total number of the second metal lines is an odd number. 如請求項1所述之金屬氧化物金屬電容結構,其中該些第一指狀電極結構更可分別位於該第二指狀電極結構之相對二側邊,以共用該第二指狀電極結構。 The metal oxide metal capacitor structure of claim 1, wherein the first finger electrode structures can be located on two opposite sides of the second finger electrode structure respectively, so as to share the second finger electrode structure.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201140785A (en) * 2009-08-27 2011-11-16 Ibm Interdigitated vertical parallel capacitor
TW201401475A (en) * 2012-06-26 2014-01-01 United Microelectronics Corp Semiconductor structure
CN108198802A (en) * 2017-12-28 2018-06-22 上海华力微电子有限公司 Capacitor
CN110416191A (en) * 2019-07-11 2019-11-05 南通沃特光电科技有限公司 A kind of integrated MIM capacitor and its manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201140785A (en) * 2009-08-27 2011-11-16 Ibm Interdigitated vertical parallel capacitor
TW201401475A (en) * 2012-06-26 2014-01-01 United Microelectronics Corp Semiconductor structure
CN108198802A (en) * 2017-12-28 2018-06-22 上海华力微电子有限公司 Capacitor
CN110416191A (en) * 2019-07-11 2019-11-05 南通沃特光电科技有限公司 A kind of integrated MIM capacitor and its manufacturing method

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