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TWI828192B - Sensor package structure - Google Patents

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TWI828192B
TWI828192B TW111122116A TW111122116A TWI828192B TW I828192 B TWI828192 B TW I828192B TW 111122116 A TW111122116 A TW 111122116A TW 111122116 A TW111122116 A TW 111122116A TW I828192 B TWI828192 B TW I828192B
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light
layer
transmitting
shielding
area
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TW111122116A
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Chinese (zh)
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TW202327110A (en
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張嘉帥
李建成
王建元
李怡志
洪立群
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同欣電子工業股份有限公司
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Priority to CN202210691249.6A priority Critical patent/CN116364732A/en
Priority to US17/852,384 priority patent/US12376399B2/en
Publication of TW202327110A publication Critical patent/TW202327110A/en
Priority to US18/484,407 priority patent/US20240047491A1/en
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Publication of TWI828192B publication Critical patent/TWI828192B/en

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Abstract

The present invention provides a sensor package structure, which includes a substrate, a sensor chip disposed on the substrate, a light-curing layer disposed on the sensor chip, a light-permeable layer disposed on the light-curing layer, a shielding layer having a ring shape and disposed on an inner surface of the light-permeable layer, and a package body that is formed on the substrate. A projection region defined by orthogonally projecting the shielding layer onto a top surface of the sensor chip surrounds an outer side of a sensing region of the sensor chip. A portion of the shielding layer in contact with the light-curing layer defines a ring-shaped distribution region having at least one light-permeable slot. The sensor chip, the light-curing layer, the light-permeable layer, and the shielding layer are embedded in the package body that exposes at least part of the light-permeable layer therefrom.

Description

感測器封裝結構Sensor packaging structure

本發明涉及一種封裝結構,尤其涉及一種感測器封裝結構。 The present invention relates to a packaging structure, and in particular to a sensor packaging structure.

現有的感測器封裝結構是將玻璃板通過膠層而設置於感測晶片上,並且所述膠層是圍繞在所述感測晶片的感測區域外圍。然而,由於穿過所述玻璃板的光線有可能部分會被所述膠層所反射,因而對所述感測晶片的所述感測區域會造成影響(如:眩光現象)。 In the existing sensor packaging structure, the glass plate is disposed on the sensing chip through an adhesive layer, and the adhesive layer surrounds the periphery of the sensing area of the sensing chip. However, since the light passing through the glass plate may be partially reflected by the adhesive layer, it may affect the sensing area of the sensing chip (eg, glare phenomenon).

依上所述,現有感測器封裝結構是在所述玻璃板與所述膠層之間形成有遮蔽層,據以降低所述眩光現象。然而,埋置於所述膠層內的所述遮蔽層易導致所述膠層難以被完全固化、並且易產生分層(delamination)缺失。 As mentioned above, the existing sensor packaging structure forms a shielding layer between the glass plate and the adhesive layer to reduce the glare phenomenon. However, the shielding layer embedded in the glue layer may easily cause the glue layer to be difficult to be completely cured and may cause delamination.

於是,本發明人認為上述缺陷可改善,乃特潛心研究並配合科學原理的運用,終於提出一種設計合理且有效改善上述缺陷的本發明。 Therefore, the inventor believed that the above-mentioned defects could be improved, so he devoted himself to research and applied scientific principles, and finally proposed an invention that is reasonably designed and effectively improves the above-mentioned defects.

本發明實施例在於提供一種感測器封裝結構,其能有效地改善現有感測器封裝結構所可能產生的缺陷。 Embodiments of the present invention provide a sensor packaging structure that can effectively improve defects that may occur in existing sensor packaging structures.

本發明實施例公開一種感測器封裝結構,其包括:一基板;一感測晶片,沿一預設方向設置於所述基板上,並且所述感測晶片電性耦接於 所述基板;其中,所述感測晶片的一頂面包含有一感測區域;一光固化層,呈環形且設置於所述感測晶片的所述頂面上並圍繞於所述感測區域的外側;一透光層,具有位於相反側的一外表面與一內表面,並且所述透光層以所述內表面設置在所述光固化層上,以位於所述感測晶片的上方;其中,所述透光層的所述內表面、所述光固化層、及所述感測晶片的所述頂面共同包圍形成有一封閉空間;一遮蔽層,呈環形且設置於所述透光層的所述內表面,並且所述遮蔽層沿所述預設方向正投影至所述頂面所形成的一投影區域,其圍繞於所述感測區域的外側;其中,接觸於所述光固化層的所述遮蔽層的部位定義有一環形配置區,並且所述環形配置區形成有至少一個透光槽孔;以及一封裝體,形成於所述基板;其中,所述感測晶片、所述光固化層、所述透光層、及所述遮蔽層皆埋置於所述封裝體內,並且所述透光層的至少部分所述外表面裸露於所述封裝體之外。 An embodiment of the present invention discloses a sensor packaging structure, which includes: a substrate; a sensing chip, which is disposed on the substrate along a preset direction, and the sensing chip is electrically coupled to The substrate; wherein, a top surface of the sensing chip contains a sensing area; a photo-cured layer is annular and is disposed on the top surface of the sensing chip and surrounds the sensing area The outside of ; Wherein, the inner surface of the light-transmitting layer, the photo-cured layer, and the top surface of the sensing chip together form a closed space; a shielding layer is annular and is disposed on the transparent layer. The inner surface of the light layer, and a projection area formed by the orthogonal projection of the shielding layer to the top surface along the preset direction, which surrounds the outside of the sensing area; wherein, in contact with the The shielding layer of the photocurable layer defines an annular configuration area, and the annular configuration area is formed with at least one light-transmitting slot; and a package is formed on the substrate; wherein, the sensing chip, The photocurable layer, the light-transmitting layer, and the shielding layer are all embedded in the package, and at least part of the outer surface of the light-transmitting layer is exposed outside the package.

本發明實施例也公開一種感測器封裝結構,其包括:一基板;一感測晶片,呈方形且沿一預設方向設置於所述基板上,並且所述感測晶片電性耦接於所述基板;其中,所述感測晶片的一頂面包含有一感測區域;一光固化層,呈環形且設置於所述感測晶片的所述頂面上並圍繞於所述感測區域的外側;一透光層,具有位於相反側的一外表面與一內表面,並且所述透光層設置在所述光固化層上,以位於所述感測晶片的上方;其中,所述透光層的所述內表面、所述光固化層、及所述感測晶片的所述頂面共同包圍形成有一封閉空間;一遮蔽層,設置於所述透光層的所述內表面,所述遮蔽層包含有彼此間隔設置的多個遮蔽條;其中,相鄰的兩個所述遮蔽條彼此間隔的區域是對應於所述感測晶片的一個角落,並且每個所述遮蔽條形成有至少一個透光槽孔;其中,所述遮蔽層沿所述預設方向正投影至所述頂面所形成的一投影區域,其圍繞於所述感測區域的外側;以及一封裝體,形成於所述基 板;其中,所述感測晶片、所述光固化層、所述透光層、及所述遮蔽層皆埋置於所述封裝體內,並且所述透光層的至少部分所述外表面裸露於所述封裝體之外。 Embodiments of the present invention also disclose a sensor packaging structure, which includes: a substrate; a sensing chip, which is square and disposed on the substrate along a preset direction, and the sensing chip is electrically coupled to The substrate; wherein, a top surface of the sensing chip contains a sensing area; a photo-cured layer is annular and is disposed on the top surface of the sensing chip and surrounds the sensing area The outside of The inner surface of the light-transmitting layer, the photo-cured layer, and the top surface of the sensing chip together form a closed space; a shielding layer is provided on the inner surface of the light-transmitting layer, The shielding layer includes a plurality of shielding strips spaced apart from each other; wherein the area of two adjacent shielding strips spaced apart from each other corresponds to a corner of the sensing wafer, and each shielding strip forms There is at least one light-transmitting slot; wherein the shielding layer is projected along the preset direction to a projection area formed by the top surface, which surrounds the outside of the sensing area; and a package, formed from the base Board; wherein the sensing chip, the photocurable layer, the light-transmitting layer, and the shielding layer are all embedded in the package, and at least part of the outer surface of the light-transmitting layer is exposed outside the package.

綜上所述,本發明實施例所公開的感測器封裝結構,其在實現以所述遮蔽層阻擋光線,來降低因為所述光固化層反光而產生的眩光現象的前提之下,所述遮蔽層的至少一個所述透光槽孔能用來供光線穿過而照射於所述光固化層,以利於其完全固化而避免所述透光層產生傾斜,並且所述遮蔽層與所述光固化層之間也能夠有效地避免分層缺陷產生,據以提升所述感測器封裝結構的良率。 In summary, the sensor packaging structure disclosed in the embodiment of the present invention is based on the premise of using the shielding layer to block light to reduce the glare phenomenon caused by the reflection of the photocured layer. At least one of the light-transmitting slots in the shielding layer can be used to allow light to pass through and irradiate the photo-cured layer to facilitate its complete curing and prevent the light-transmitting layer from tilting, and the shielding layer is connected to the The generation of delamination defects between the photo-cured layers can also be effectively avoided, thereby improving the yield of the sensor packaging structure.

為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。 In order to further understand the characteristics and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, these descriptions and drawings are only used to illustrate the present invention and do not make any reference to the protection scope of the present invention. limit.

100:感測器封裝結構 100: Sensor packaging structure

1:基板 1:Substrate

11:上表面 11: Upper surface

111:晶片固定區 111: Chip fixing area

112:接合墊 112:Joining pad

12:下表面 12: Lower surface

2:感測晶片 2: Sensing chip

21:頂面 21:Top surface

211:感測區域 211: Sensing area

212:承載區域 212: Bearing area

213:連接墊 213:Connection pad

22:底面 22: Bottom surface

23:邊 23: side

24:角落 24:Corner

3:金屬線 3:Metal wire

4:光固化層 4: Light curing layer

5:透光層 5: Translucent layer

51:外表面 51:Outer surface

52:內表面 52:Inner surface

6:遮蔽層 6: Masking layer

6a:環形配置區 6a: Ring configuration area

6b:遮蔽條 6b: Masking strip

61:透光槽孔 61:Light-transmitting slot

7:封裝體 7:Package

8:焊接球 8: Solder ball

E:封閉空間 E: Enclosed space

P:預設方向 P: preset direction

D1-1、D1-2、D1-3、D1-4、D2-1、D2-2、D2-3、D2-4:距離 D1-1, D1-2, D1-3, D1-4, D2-1, D2-2, D2-3, D2-4: distance

W6a、W4、W61:寬度 W6a, W4, W61: Width

圖1為本發明實施例一的感測器封裝結構的立體示意圖。 FIG. 1 is a schematic three-dimensional view of a sensor packaging structure according to Embodiment 1 of the present invention.

圖2為圖1的俯視示意圖。 Figure 2 is a schematic top view of Figure 1.

圖3為圖2沿剖線III-III的剖視示意圖。 FIG. 3 is a schematic cross-sectional view along section line III-III of FIG. 2 .

圖4為圖3的區域IV的放大示意圖。 FIG. 4 is an enlarged schematic diagram of area IV in FIG. 3 .

圖5為圖1省略透光層與封裝體的俯視示意圖。 FIG. 5 is a schematic top view of FIG. 1 with the light-transmitting layer and the package body omitted.

圖6為圖5的遮蔽層的變化配置示意圖(一)。 FIG. 6 is a schematic diagram (1) of the changing configuration of the shielding layer in FIG. 5 .

圖7為圖5的遮蔽層的變化配置示意圖(二)。 FIG. 7 is a schematic diagram (2) of the changing configuration of the shielding layer in FIG. 5 .

圖8為圖5的遮蔽層的變化配置示意圖(三)。 FIG. 8 is a schematic diagram (3) of the changing configuration of the shielding layer in FIG. 5 .

圖9為圖5的遮蔽層的變化配置示意圖(四)。 FIG. 9 is a schematic diagram (4) of the changing configuration of the shielding layer in FIG. 5 .

圖10為本發明實施例二的感測器封裝結構的立體示意圖。 FIG. 10 is a schematic three-dimensional view of a sensor packaging structure according to Embodiment 2 of the present invention.

圖11為圖10省略透光層與封裝體的俯視示意圖。 FIG. 11 is a schematic top view of FIG. 10 with the light-transmitting layer and the package body omitted.

圖12為圖11的區域XII的放大示意圖。 FIG. 12 is an enlarged schematic diagram of area XII of FIG. 11 .

圖13為圖10的遮蔽層的變化配置示意圖(一)。 FIG. 13 is a schematic diagram (1) of the changing configuration of the shielding layer in FIG. 10 .

圖14為圖10的遮蔽層的變化配置示意圖(二)。 FIG. 14 is a schematic diagram (2) of the changing configuration of the shielding layer in FIG. 10 .

圖15為圖10的遮蔽層的變化配置示意圖(三)。 FIG. 15 is a schematic diagram (3) of the changing configuration of the shielding layer in FIG. 10 .

以下是通過特定的具體實施例來說明本發明所公開有關“感測器封裝結構”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。 The following is a specific embodiment to illustrate the implementation of the "sensor packaging structure" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depictions based on actual dimensions, as is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of the present invention.

應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號,但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 It should be understood that although terms such as “first”, “second” and “third” may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another component or one signal from another signal. In addition, the term "or" used in this article shall include any one or combination of more of the associated listed items depending on the actual situation.

[實施例一] [Example 1]

請參閱圖1至圖9所示,其為本發明的實施例一。如圖1和圖2所示,本實施例公開一種感測器封裝結構100;也就是說,內部非為封裝感測器的任何結構,其結構設計基礎不同於本實施例所指的感測器封裝結構100,所以兩者之間並不適於進行對比。 Please refer to FIG. 1 to FIG. 9 , which is Embodiment 1 of the present invention. As shown in Figures 1 and 2, this embodiment discloses a sensor packaging structure 100; that is to say, any structure that does not encapsulate a sensor internally has a structural design basis that is different from the sensing structure 100 referred to in this embodiment. device packaging structure 100, so comparison between the two is not suitable.

如圖3至圖5所示,所述感測器封裝結構100包含有一基板1、設置於所述基板1上的一感測晶片2、電性耦接所述感測晶片2與所述基板1的多條金屬線3、呈環形且設置於所述感測晶片2上的一光固化層4、設置於所述光固化層4上的一透光層5、設置於所述透光層5的一遮蔽層6、及形成於所述基板1上的一封裝體7。 As shown in FIGS. 3 to 5 , the sensor package structure 100 includes a substrate 1 , a sensing chip 2 disposed on the substrate 1 , and the sensing chip 2 is electrically coupled to the substrate. A plurality of metal lines 3 of 1, a photo-curing layer 4 arranged on the sensing chip 2, a light-transmitting layer 5 arranged on the photo-curing layer 4, and a light-transmitting layer 5 arranged on the sensing chip 2. A shielding layer 6 of 5 and a package 7 formed on the substrate 1 .

其中,所述感測器封裝結構100於本實施例中雖是以包含上述元件來做說明,但所述感測器封裝結構100也可以依據設計需求而加以調整變化。舉例來說,在本發明未繪示的其他實施例中,所述感測器封裝結構100可以省略多個所述金屬線3,並且所述感測晶片2通過覆晶方式固定且電性耦接於所述基板1上;或者,所述感測器封裝結構100也可以省略或以其他構造替代所述封裝體7。以下將分別就本實施例中的所述感測器封裝結構100的各個元件構造與連接關係作一說明。 Although the sensor packaging structure 100 is described as including the above components in this embodiment, the sensor packaging structure 100 can also be adjusted and changed according to design requirements. For example, in other embodiments not shown in the present invention, the sensor packaging structure 100 can omit a plurality of the metal lines 3, and the sensing chip 2 is fixed and electrically coupled through a flip-chip method. Connected to the substrate 1; alternatively, the sensor package structure 100 can also omit or replace the package body 7 with other structures. The structure and connection relationship of each component of the sensor packaging structure 100 in this embodiment will be described below.

所述基板1於本實施例中為呈正方形或矩形,但本發明不受限於此。其中,所述基板1於其上表面11的大致中央處設有一晶片固定區111,並且所述基板1於所述上表面11形成有位於所述晶片固定區111外側的多個接合墊112。多個所述接合墊112於本實施例中是大致排列呈環狀,但本發明不限於此。舉例來說,在本發明未繪示的其他實施例中,多個所述接合墊112也可以是在所述晶片固定區111的相反兩側分別排成兩列。 The substrate 1 is square or rectangular in this embodiment, but the invention is not limited thereto. The substrate 1 is provided with a chip fixing area 111 at approximately the center of its upper surface 11 , and the substrate 1 is formed with a plurality of bonding pads 112 located outside the chip fixing area 111 on the upper surface 11 . The plurality of bonding pads 112 are generally arranged in a ring shape in this embodiment, but the invention is not limited thereto. For example, in other embodiments not shown in the present invention, the plurality of bonding pads 112 may also be arranged in two rows on opposite sides of the chip fixing area 111 .

此外,所述基板1也可以於其下表面12設有多個焊接球8,並且所述感測器封裝結構100能通過多個所述焊接球8而焊接固定於一電子構件(圖中未示出)上,據以使所述感測器封裝結構100能夠電性連接於所述電子構件。 In addition, the substrate 1 can also be provided with a plurality of solder balls 8 on its lower surface 12, and the sensor package structure 100 can be soldered and fixed to an electronic component (not shown in the figure) through a plurality of the solder balls 8. shown), thereby enabling the sensor packaging structure 100 to be electrically connected to the electronic component.

所述感測晶片2於本實施例中呈方形(如:長方形或正方形)且以一影像感測晶片來說明,但不以此為限。其中,所述感測晶片2(的底面22) 是沿一預設方向P固定於所述基板1的所述晶片固定區111;也就是說,所述感測晶片2是位於多個所述接合墊112的內側。再者,所述感測晶片2的一頂面21包含有一感測區域211及圍繞於所述感測區域211(且呈環形)的一承載區域212,並且所述感測晶片2包含有位於所述承載區域212的多個連接墊213(也就是,多個所述連接墊213位於所述感測區域211的外側)。 The sensing chip 2 is in a square shape (eg, rectangular or square) in this embodiment and is illustrated as an image sensing chip, but is not limited to this. Wherein, the sensing chip 2 (bottom surface 22) It is fixed to the chip fixing area 111 of the substrate 1 along a preset direction P; that is, the sensing chip 2 is located inside a plurality of the bonding pads 112 . Furthermore, a top surface 21 of the sensing chip 2 includes a sensing area 211 and a carrying area 212 surrounding the sensing area 211 (and in an annular shape), and the sensing chip 2 includes a A plurality of connection pads 213 of the carrying area 212 (that is, a plurality of the connection pads 213 are located outside the sensing area 211).

其中,所述感測晶片2的多個所述連接墊213的數量及位置於本實施例中是分別對應於所述基板1的多個所述接合墊112的數量及位置。再者,多個所述金屬線3的一端分別連接於多個所述接合墊112,並且多個所述金屬線3的另一端分別連接於多個所述連接墊213(也就是說,每條所述金屬線3的兩端分別連接於一個所述接合墊112及相對應的所述連接墊213),據以使所述基板1能通過多個所述金屬線3而電性耦接於所述感測晶片2。 In this embodiment, the number and position of the connection pads 213 of the sensing chip 2 respectively correspond to the number and position of the bonding pads 112 of the substrate 1 . Furthermore, one ends of the metal wires 3 are respectively connected to the bonding pads 112 , and the other ends of the metal wires 3 are connected to the connection pads 213 respectively (that is, each Both ends of the metal wires 3 are respectively connected to one of the bonding pads 112 and the corresponding connection pads 213), so that the substrate 1 can be electrically coupled through a plurality of the metal wires 3 on the sensing chip 2.

所述光固化層4設置於所述感測晶片2的所述頂面21上並圍繞於所述感測晶片2的外側。其中,所述光固化層4於本實施例中位於多條所述金屬線3的內側、且未接觸於任一條所述金屬線3,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,至少一條所述金屬線3的局部也可以埋置於所述光固化層4內。此外,所述光固化層4於本實施例中進一步限定為一紫外光固化層,其意指是通過一紫外光照射而固化的結構。 The photocurable layer 4 is disposed on the top surface 21 of the sensing chip 2 and surrounds the outside of the sensing chip 2 . In this embodiment, the photocurable layer 4 is located inside a plurality of the metal lines 3 and does not contact any of the metal lines 3 , but the invention is not limited thereto. For example, in other embodiments not shown in the present invention, at least a part of the metal line 3 can also be embedded in the photocurable layer 4 . In addition, the photo-curable layer 4 is further limited to an ultraviolet light-curable layer in this embodiment, which means a structure that is cured by ultraviolet light irradiation.

所述透光層5於本實施例中是以呈透明狀的一平板玻璃來說明,但本發明不受限於此。所述透光層5於本實施例中包含有一外表面51、及位於所述外表面51相反側的一內表面52。其中,所述透光層5以所述內表面52設置在所述光固化層4上以位於所述感測晶片2的上方;也就是說,所述光固化層4夾持於所述透光層5與所述基板1之間,並且所述透光層5的所述內表面52、所述光固化層4、及所述感測晶片2的所述頂面21共同包圍形成有一封閉空間E。 The light-transmitting layer 5 is illustrated as a transparent flat glass in this embodiment, but the invention is not limited thereto. In this embodiment, the light-transmitting layer 5 includes an outer surface 51 and an inner surface 52 located on the opposite side of the outer surface 51 . Wherein, the light-transmitting layer 5 is disposed on the photo-curing layer 4 with the inner surface 52 so as to be located above the sensing chip 2; that is to say, the photo-curing layer 4 is sandwiched between the transparent layer 5 and the photo-curing layer 4. Between the light layer 5 and the substrate 1, and the inner surface 52 of the light-transmitting layer 5, the photo-cured layer 4, and the top surface 21 of the sensing chip 2 together form a closed Space E.

所述遮蔽層6呈環形且設置於所述透光層5的所述內表面52,用以阻擋光線穿過。其中,所述遮蔽層6沿所述預設方向P正投影至所述頂面21所形成的一投影區域,其圍繞於所述感測區域211的外側。換個角度來說,所述遮蔽層6的內邊緣形成有位於所述感測區域211正上方的一開口。 The shielding layer 6 is annular and is disposed on the inner surface 52 of the light-transmitting layer 5 to block light from passing through. The shielding layer 6 is projected forward along the preset direction P to a projection area formed by the top surface 21 , which surrounds the outside of the sensing area 211 . To put it another way, an opening is formed on the inner edge of the shielding layer 6 directly above the sensing area 211 .

進一步地說,接觸於所述光固化層4的所述遮蔽層6的部位定義有一環形配置區6a,並且所述環形配置區6a形成有至少一個透光槽孔61。其中,所述光固化層4填入至少一個所述透光槽孔61內,進而連接於所述透光層5的所述內表面52。 Furthermore, the portion of the shielding layer 6 that is in contact with the photocurable layer 4 defines an annular arrangement area 6a, and the annular arrangement area 6a is formed with at least one light-transmitting slot 61. The photocurable layer 4 is filled into at least one of the light-transmitting slots 61 and is further connected to the inner surface 52 of the light-transmitting layer 5 .

據此,本發明實施例所公開的所述感測器封裝結構100,其在實現以所述遮蔽層6阻擋光線,來降低因為所述光固化層4反光而產生的眩光現象的前提之下,所述遮蔽層6的至少一個所述透光槽孔61能用來供光線穿過而照射於所述光固化層4,以利於其完全固化而避免所述透光層5產生傾斜,並且所述遮蔽層6與所述光固化層4之間也能夠有效地避免分層缺陷產生,據以提升所述感測器封裝結構100的良率。 Accordingly, the sensor packaging structure 100 disclosed in the embodiment of the present invention is based on the premise of using the shielding layer 6 to block light to reduce the glare phenomenon caused by the reflection of the photocured layer 4 , at least one of the light-transmitting slots 61 of the shielding layer 6 can be used to allow light to pass through and irradiate the photo-cured layer 4 to facilitate its complete curing and avoid the tilt of the light-transmitting layer 5, and The formation of delamination defects between the shielding layer 6 and the photo-cured layer 4 can also be effectively avoided, thereby improving the yield of the sensor packaging structure 100 .

需說明的是,為使形成於所述環形配置區6a的至少一個所述透光槽孔61能夠更為利於同時兼顧降低所述眩光現象、並有助於所述光固化層4的完全固化,所述環形配置區6a較佳是符合下述結構條件的至少其中之一,但不以此為限。 It should be noted that in order to make at least one light-transmitting slot 61 formed in the annular arrangement area 6 a more conducive to simultaneously reducing the glare phenomenon and facilitating the complete curing of the photo-cured layer 4 , the annular arrangement area 6a preferably meets at least one of the following structural conditions, but is not limited thereto.

具體來說,所述環形配置區6a與所述遮蔽層6的所述內邊緣相隔有90微米(μm)~110微米的距離D1-1,並且所述環形配置區6a與所述遮蔽層6的外邊緣相隔有90微米~110微米的距離D1-2。所述環形配置區6a與所述光固化層4的內邊緣相隔有45微米~55微米的距離D1-3,並且所述環形配置區6a與所述光固化層4的外邊緣相隔有45微米~55微米的距離D1-4。所述環形配置區6a的寬度W6a為所述光固化層4的所述內邊緣與所述外邊緣之間的寬度 W4的25%~100%。 Specifically, the annular configuration area 6a is separated from the inner edge of the shielding layer 6 by a distance D1-1 of 90 microns (μm) to 110 microns, and the annular configuration area 6a is separated from the inner edge of the shielding layer 6 The outer edges are separated by a distance D1-2 of 90 microns to 110 microns. The annular configuration area 6a is separated from the inner edge of the photo-cured layer 4 by a distance D1-3 of 45 microns to 55 microns, and the annular configuration area 6a is separated from the outer edge of the photo-cured layer 4 by 45 microns. ~55 micron distance D1-4. The width W6a of the annular configuration area 6a is the width between the inner edge and the outer edge of the photocurable layer 4 25%~100% of W4.

此外,形成於所述環形配置區6a的至少一個所述透光槽孔61的數量與外形於本實施例中可以依據不同設計需求而加以調整變化,但為了有利於同時兼顧降低所述眩光現象、並有助於所述光固化層4的完全固化,本實施例於以下內容將列舉所述遮蔽層6較為可行的幾種實施態樣,但本發明不以此為限。 In addition, the number and shape of at least one light-transmitting slot 61 formed in the annular arrangement area 6a can be adjusted and changed according to different design requirements in this embodiment, but in order to facilitate the reduction of the glare phenomenon at the same time , and contribute to the complete curing of the photocurable layer 4. This embodiment will enumerate several feasible implementations of the shielding layer 6 in the following content, but the present invention is not limited thereto.

如圖5和圖6所示,至少一個透光槽孔61呈環形且其佔所述環形配置區6a的25%~100%區域。進一步地說,如圖5所示,至少一個所述透光槽孔61的數量限定為一個且其佔所述環形配置區6a的100%區域。或者,如圖6所示,至少一個所述透光槽孔61的數量限定為多個(如:兩個)且其佔所述環形配置區6a的25%~100%區域。 As shown in FIGS. 5 and 6 , at least one light-transmitting slot 61 is annular and occupies 25% to 100% of the annular configuration area 6 a. Further, as shown in FIG. 5 , the number of at least one light-transmitting slot 61 is limited to one and it occupies 100% of the annular arrangement area 6 a. Alternatively, as shown in FIG. 6 , the number of at least one light-transmitting slot 61 is limited to multiple (eg, two) and accounts for 25% to 100% of the annular configuration area 6 a.

如圖7所示,至少一個所述透光槽孔61呈C字形且其佔所述環形配置區6a的25%~95%區域。於本實施例的圖7中,至少一個所述透光槽孔61的數量是以一個來說明,但本發明不以此為限。舉例來說,在本發明未繪示的其他實施例中,呈C字形的所述透光槽孔61數量也可以是多個。 As shown in FIG. 7 , at least one of the light-transmitting slots 61 is C-shaped and occupies 25% to 95% of the annular arrangement area 6 a. In FIG. 7 of this embodiment, the number of at least one light-transmitting slot 61 is illustrated as one, but the invention is not limited thereto. For example, in other embodiments not shown in the present invention, the number of C-shaped light-transmitting slots 61 may also be multiple.

如圖8和圖9所示,至少一個所述透光槽孔61的數量限定為多個且其各呈長條狀,並且多個所述透光槽孔61的位置分別對應於所述感測晶片2的多個邊23。進一步地說,如圖9所示,所述感測晶片2的每個所述邊23對應且垂直於至少兩個所述透光槽孔61,並且多個所述透光槽孔61佔所述環形配置區6a的25%~100%區域。 As shown in FIGS. 8 and 9 , the number of at least one light-transmitting slot 61 is limited to a plurality, each of which is in the shape of a strip, and the positions of the plurality of light-transmitting slots 61 respectively correspond to the sensors. Multiple sides 23 of wafer 2 are measured. Further, as shown in FIG. 9 , each side 23 of the sensing chip 2 corresponds to and is perpendicular to at least two of the light-transmitting slots 61 , and a plurality of the light-transmitting slots 61 occupies an area of The 25%~100% area of the annular configuration area 6a is described.

或者,如圖8所示,所述感測晶片2的每個所述邊23對應且平行於一個所述透光槽孔61,並且多個所述透光槽孔61佔所述環形配置區6a的25%~100%區域,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述感測晶片2的每個所述邊23也可以對應且平行於至少兩個所述透光 槽孔61。 Or, as shown in FIG. 8 , each side 23 of the sensing chip 2 corresponds to and is parallel to one of the light-transmitting slots 61 , and a plurality of the light-transmitting slots 61 occupy the annular arrangement area. 25%~100% area of 6a, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, each side 23 of the sensing chip 2 may also correspond to and be parallel to at least two of the light-transmitting Slot 61.

所述封裝體7於本實施例中為不透光狀,用以阻擋可見光穿過。所述封裝體7是以一模制封膠(molding compound)來說明,並且所述封裝體7形成於所述基板1的所述上表面11且其邊緣切齊於所述基板1的邊緣。其中,所述感測晶片2、所述光固化層4、所述透光層5、及所述遮蔽層6皆埋置於所述封裝體7內,並且所述透光層5的至少部分所述外表面51裸露於所述封裝體7之外,但本發明不受限於此。 The package body 7 is opaque in this embodiment to block visible light from passing through. The package body 7 is illustrated as a molding compound, and the package body 7 is formed on the upper surface 11 of the substrate 1 and its edge is flush with the edge of the substrate 1 . Wherein, the sensing chip 2, the photocurable layer 4, the light-transmitting layer 5, and the shielding layer 6 are all embedded in the package 7, and at least part of the light-transmitting layer 5 The outer surface 51 is exposed outside the package body 7 , but the present invention is not limited thereto.

[實施例二] [Example 2]

請參閱圖11至圖12所示,其為本發明的實施例二。由於本實施例類似於上述實施例一,所以兩個實施例的相同處不再加以贅述(如:所述基板1、所述感測晶片2、多條所述金屬線3、所述光固化層4、所述透光層5、及所述封裝體7),而本實施例相較於上述實施例一的差異主要在於:所述遮蔽層6。 Please refer to Figures 11 to 12, which are Embodiment 2 of the present invention. Since this embodiment is similar to the above-mentioned Embodiment 1, the similarities between the two embodiments will not be repeated (such as: the substrate 1, the sensing chip 2, the plurality of metal lines 3, the photo-curing Layer 4, the light-transmitting layer 5, and the package 7), and the difference between this embodiment and the above-mentioned Embodiment 1 mainly lies in: the shielding layer 6.

於本實施例的圖9至圖11中,所述遮蔽層6形成於所述透光層5的所述內表面(未標示),並且所述遮蔽層6包含有彼此間隔設置的多個遮蔽條6b。其中,所述遮蔽層6(或多個所述遮蔽條6b)沿所述預設方向P正投影至所述頂面21所形成的一投影區域,其圍繞於所述感測區域211的外側;也就是說,所述感測區域211是大致位於所述投影區域的內側,據以能通過所述遮蔽層6來降低上述眩光現象的產生。 In FIGS. 9 to 11 of this embodiment, the shielding layer 6 is formed on the inner surface (not labeled) of the light-transmitting layer 5 , and the shielding layer 6 includes a plurality of shielding layers spaced apart from each other. Article 6b. Wherein, the shielding layer 6 (or the plurality of shielding strips 6b) is projected forward along the preset direction P to a projection area formed by the top surface 21, which surrounds the outside of the sensing area 211. ; That is to say, the sensing area 211 is generally located inside the projection area, so that the above-mentioned glare phenomenon can be reduced through the shielding layer 6 .

更詳細地說,所述感測晶片2的每個所述邊23對應且平行於一個所述遮蔽條6b,並且相鄰的兩個所述遮蔽條6b彼此間隔的區域是對應於所述感測晶片2的一個角落24。據此,位在每個所述角落24上的所述光固化層4部位能夠不被所述遮蔽層6所覆蓋,以利於其被完全固化。 In more detail, each side 23 of the sensing chip 2 corresponds to and is parallel to one of the shielding strips 6b, and the area between two adjacent shielding strips 6b is corresponding to the sensing area. Measure one corner 24 of wafer 2. Accordingly, the portion of the photocurable layer 4 located at each corner 24 can not be covered by the shielding layer 6 to facilitate its complete curing.

再者,所述遮蔽層6於每個所述遮蔽條6b形成有至少一個透光槽 孔61,並且所述光固化層4填入每個所述遮蔽條6b的至少一個所述透光槽孔61內,進而連接於所述透光層5的所述內表面(未標示)。換個角度來看,由於所述感測晶片2的多個所述角落24於本實施例中並未被所述遮蔽層6所遮蔽,所以所述遮蔽層6所形成的所述透光槽孔61於本實施例中的配置方式不同於實施例一。 Furthermore, the shielding layer 6 is formed with at least one light-transmitting groove on each of the shielding strips 6b. holes 61, and the photocurable layer 4 is filled into at least one light-transmitting slot 61 of each shielding strip 6b, and is further connected to the inner surface (not labeled) of the light-transmitting layer 5. From another perspective, since the corners 24 of the sensing chip 2 are not blocked by the shielding layer 6 in this embodiment, the light-transmitting slots formed by the shielding layer 6 The configuration of 61 in this embodiment is different from that in Embodiment 1.

需說明的是,形成於每個所述遮蔽條6b的至少一個所述透光槽孔61的數量與外形於本實施例中可依據不同設計需求而加以調整變化,但為了有利於同時兼顧降低所述眩光現象、並有助於所述光固化層4的完全固化,以下內容將列舉所述遮蔽層6較為可行的幾種實施態樣,但本發明不以此為限。 It should be noted that the number and shape of at least one light-transmitting slot 61 formed in each shielding strip 6b can be adjusted and changed according to different design requirements in this embodiment, but in order to facilitate both reduction and The glare phenomenon is beneficial to the complete curing of the photocurable layer 4. The following content will enumerate several feasible implementations of the shielding layer 6, but the present invention is not limited thereto.

如圖11和圖13所示,每個所述遮蔽條6b的至少25%區域形成有至少一個所述透光槽孔61;於每個所述遮蔽條6b之中,至少一個所述透光槽孔61呈長條狀且沿相對應所述遮蔽條6b的長度方向呈貫穿狀,並且至少一個所述透光槽孔61的數量可以是一個(如:圖11)、或是多個(如:圖13)且其彼此平行。 As shown in Figures 11 and 13, at least one light-transmitting slot 61 is formed in at least 25% of the area of each shielding strip 6b; in each of the shielding strips 6b, at least one of the light-transmitting slots 61 The slots 61 are elongated and penetrate along the length direction corresponding to the shielding strip 6b, and the number of at least one of the light-transmitting slots 61 can be one (eg: Figure 11) or multiple ( Such as: Figure 13) and they are parallel to each other.

進一步地說,於圖11和圖12所示的每個所述遮蔽條6b之中,至少一個所述透光槽孔61與所述遮蔽層6的內邊緣相隔有90微米~110微米的距離D2-1,並且至少一個所述透光槽孔61與所述遮蔽層6的外邊緣相隔有90微米~110微米的距離D2-2,至少一個所述透光槽孔61與所述光固化層4的內邊緣相隔有45微米~55微米的距離D2-3,至少一個所述透光槽孔61與所述光固化層4的外邊緣相隔有45微米~55微米的距離D2-4。再者,於圖11和圖12所示的每個所述遮蔽條6b之中,至少一個所述透光槽孔61的寬度W61為所述光固化層4的所述內邊緣與所述外邊緣之間的寬度W4的25%~100%。 Furthermore, in each of the shielding strips 6b shown in Figures 11 and 12, at least one of the light-transmitting slots 61 is separated from the inner edge of the shielding layer 6 by a distance of 90 microns to 110 microns. D2-1, and at least one of the light-transmitting slots 61 is separated from the outer edge of the shielding layer 6 by a distance D2-2 of 90 microns to 110 microns. The inner edges of the layer 4 are separated by a distance D2-3 of 45 microns to 55 microns, and at least one of the light-transmitting slots 61 is separated from the outer edge of the photocurable layer 4 by a distance D2-4 of 45 microns to 55 microns. Furthermore, in each of the shielding strips 6b shown in FIGS. 11 and 12 , the width W61 of at least one of the light-transmitting slots 61 is the distance between the inner edge and the outer edge of the photocurable layer 4 . The width between edges is 25%~100% of W4.

此外,於圖14所示的每個所述遮蔽條6b之中,至少一個所述透 光槽孔61可以是鄰近於相對應所述遮蔽條6b的末端、也就是鄰近於所述感測晶片2的一個所述角落24。需額外說明的是,任一個所述遮蔽條6b的至少一個所述透光槽孔61的數量與尺寸可依據設計需求而加以調整變化,不以上述實施例的圖式為限。 In addition, in each of the shielding strips 6b shown in FIG. 14, at least one of the transparent The light slot 61 may be adjacent to the end of the corresponding shielding strip 6 b, that is, adjacent to one of the corners 24 of the sensing chip 2 . It should be additionally noted that the number and size of at least one light-transmitting slot 61 of any of the shielding strips 6b can be adjusted and changed according to design requirements, and is not limited to the drawings of the above embodiment.

於圖15所示的每個所述遮蔽條6b之中,每個所述遮蔽條6b的至少25%區域形成有至少一個所述透光槽孔61,並且至少一個所述透光槽孔61的數量限定為多個且其各呈長條狀。其中,每個所述透光槽孔61沿相對應所述遮蔽條6b的寬度方向呈貫穿狀。所述感測晶片2的每個所述邊23對應且垂直於至少兩個所述透光槽孔61。 In each of the shielding strips 6b shown in FIG. 15 , at least 25% of the area of each shielding strip 6b is formed with at least one of the light-transmitting slots 61 , and at least one of the light-transmitting slots 61 The number is limited to multiple and each of them is in the shape of a long strip. Each of the light-transmitting slots 61 is penetrating along the width direction of the corresponding shielding strip 6b. Each side 23 of the sensing chip 2 corresponds to and is perpendicular to at least two of the light-transmitting slots 61 .

[本發明實施例的技術效果] [Technical effects of the embodiments of the present invention]

綜上所述,本發明實施例所公開的感測器封裝結構,其在實現以所述遮蔽層阻擋光線,來降低因為所述光固化層反光而產生的眩光現象的前提之下,所述遮蔽層的至少一個所述透光槽孔能用來供光線穿過而照射於所述光固化層,以利於其完全固化而避免所述透光層產生傾斜,並且所述遮蔽層與所述光固化層之間也能夠有效地避免分層缺陷產生,據以提升所述感測器封裝結構的良率。 In summary, the sensor packaging structure disclosed in the embodiment of the present invention is based on the premise of using the shielding layer to block light to reduce the glare phenomenon caused by the reflection of the photocured layer. At least one of the light-transmitting slots in the shielding layer can be used to allow light to pass through and irradiate the photo-cured layer to facilitate its complete curing and prevent the light-transmitting layer from tilting, and the shielding layer is connected to the The generation of delamination defects between the photo-cured layers can also be effectively avoided, thereby improving the yield of the sensor packaging structure.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的專利範圍內。 The contents disclosed above are only preferred and feasible embodiments of the present invention, and do not limit the patent scope of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the patent scope of the present invention. within.

100:感測器封裝結構 100: Sensor packaging structure

1:基板 1:Substrate

11:上表面 11: Upper surface

111:晶片固定區 111: Chip fixing area

112:接合墊 112:Joining pad

12:下表面 12: Lower surface

2:感測晶片 2: Sensing chip

21:頂面 21:Top surface

211:感測區域 211: Sensing area

212:承載區域 212: Bearing area

213:連接墊 213:Connection pad

22:底面 22: Bottom surface

23:邊 23: side

3:金屬線 3:Metal wire

4:光固化層 4: Light curing layer

5:透光層 5: Translucent layer

51:外表面 51:Outer surface

52:內表面 52:Inner surface

6:遮蔽層 6: Masking layer

6a:環形配置區 6a: Ring configuration area

61:透光槽孔 61:Light-transmitting slot

7:封裝體 7:Package

8:焊接球 8: Solder ball

E:封閉空間 E: Enclosed space

P:預設方向 P: preset direction

Claims (20)

一種感測器封裝結構,其包括:一基板;一感測晶片,沿一預設方向設置於所述基板上,並且所述感測晶片電性耦接於所述基板;其中,所述感測晶片的一頂面包含有一感測區域;一光固化層,呈環形且設置於所述感測晶片的所述頂面上並圍繞於所述感測區域的外側;一透光層,具有位於相反側的一外表面與一內表面,並且所述透光層以所述內表面設置在所述光固化層上,以位於所述感測晶片的上方;其中,所述透光層的所述內表面、所述光固化層、及所述感測晶片的所述頂面共同包圍形成有一封閉空間;一遮蔽層,呈環形且設置於所述透光層的所述內表面,並且所述遮蔽層沿所述預設方向正投影至所述頂面所形成的一投影區域,其圍繞於所述感測區域的外側;其中,接觸於所述光固化層的所述遮蔽層的部位定義有一環形配置區,並且所述環形配置區形成有至少一個透光槽孔;以及一封裝體,形成於所述基板;其中,所述感測晶片、所述光固化層、所述透光層、及所述遮蔽層皆埋置於所述封裝體內,並且所述透光層的至少部分所述外表面裸露於所述封裝體之外。 A sensor packaging structure, which includes: a substrate; a sensing chip, which is disposed on the substrate along a preset direction, and the sensing chip is electrically coupled to the substrate; wherein the sensing chip A top surface of the sensing chip contains a sensing area; a photo-cured layer is annular and is disposed on the top surface of the sensing chip and surrounds the outside of the sensing area; a light-transmitting layer has An outer surface and an inner surface located on opposite sides, and the light-transmitting layer is disposed on the photo-cured layer with the inner surface so as to be located above the sensing chip; wherein, the light-transmitting layer The inner surface, the photocurable layer, and the top surface of the sensing chip together form a closed space; a shielding layer is annular and is disposed on the inner surface of the light-transmitting layer, and The shielding layer is projected forward along the preset direction to a projection area formed by the top surface, which surrounds the outside of the sensing area; wherein, the portion of the shielding layer that is in contact with the photocurable layer The location defines an annular configuration area, and the annular configuration area is formed with at least one light-transmitting slot; and a package is formed on the substrate; wherein the sensing chip, the photo-cured layer, the transparent slot The light layer and the shielding layer are both embedded in the package, and at least part of the outer surface of the light-transmitting layer is exposed outside the package. 如請求項1所述的感測器封裝結構,其中,所述環形配置區與所述遮蔽層的內邊緣相隔有90微米(μm)~110微米的距離,並且所述環形配置區與所述遮蔽層的外邊緣相隔有90微米~110微米的距離。 The sensor packaging structure of claim 1, wherein the annular configuration area is separated from the inner edge of the shielding layer by a distance of 90 micrometers (μm) ~ 110 microns, and the annular configuration area is separated from the inner edge of the shielding layer. The outer edges of the shielding layer are separated by a distance of 90 microns to 110 microns. 如請求項1所述的感測器封裝結構,其中,所述環形配置區與所述光固化層的內邊緣相隔有45微米~55微米的距離,並且所述環形配置區與所述光固化層的外邊緣相隔有45微米~55微米的距離。 The sensor packaging structure of claim 1, wherein the annular configuration area is separated from the inner edge of the photo-cured layer by a distance of 45 microns to 55 microns, and the annular configuration area is separated from the inner edge of the photo-cured layer. The outer edges of the layers are separated by a distance of 45 microns to 55 microns. 如請求項1所述的感測器封裝結構,其中,所述環形配置區的寬度為所述光固化層的內邊緣與外邊緣之間的距離的25%~100%。 The sensor packaging structure of claim 1, wherein the width of the annular configuration area is 25% to 100% of the distance between the inner edge and the outer edge of the photo-cured layer. 如請求項1所述的感測器封裝結構,其中,至少一個所述透光槽孔呈環形且其佔所述環形配置區的25%~100%區域。 The sensor packaging structure of claim 1, wherein at least one of the light-transmitting slots is annular and occupies 25% to 100% of the annular configuration area. 如請求項5所述的感測器封裝結構,其中,至少一個所述透光槽孔的數量進一步限定為一個且其佔所述環形配置區的100%區域。 The sensor packaging structure of claim 5, wherein the number of at least one light-transmitting slot is further limited to one and it occupies 100% of the annular configuration area. 如請求項5所述的感測器封裝結構,其中,至少一個所述透光槽孔的數量進一步限定為多個且其佔所述環形配置區的25%~100%區域。 The sensor packaging structure of claim 5, wherein the number of at least one light-transmitting slot is further limited to a plurality and accounts for 25% to 100% of the annular configuration area. 如請求項1所述的感測器封裝結構,其中,至少一個所述透光槽孔呈C字形且其佔所述環形配置區的25%~95%區域。 The sensor packaging structure of claim 1, wherein at least one of the light-transmitting slots is C-shaped and accounts for 25% to 95% of the annular configuration area. 如請求項1所述的感測器封裝結構,其中,所述感測晶片呈方形,至少一個所述透光槽孔的數量進一步限定為多個且其各呈長條狀,並且多個所述透光槽孔的位置分別對應於所述 感測晶片的多個邊。 The sensor packaging structure according to claim 1, wherein the sensing chip is in a square shape, the number of at least one of the light-transmitting slots is further limited to a plurality, each of which is in the shape of a strip, and the plurality of light-transmitting slots are each in a strip shape. The positions of the light-transmitting slots respectively correspond to the Sensing multiple sides of the wafer. 如請求項9所述的感測器封裝結構,其中,所述感測晶片的每個所述邊對應且平行於一個所述透光槽孔,並且多個所述透光槽孔佔所述環形配置區的25%~100%區域。 The sensor packaging structure of claim 9, wherein each side of the sensing chip corresponds to and is parallel to one of the light-transmitting slots, and a plurality of the light-transmitting slots occupy the 25%~100% area of the annular configuration area. 如請求項9所述的感測器封裝結構,其中,所述感測晶片的每個所述邊對應且垂直於至少兩個所述透光槽孔,並且多個所述透光槽孔佔所述環形配置區的25%~100%區域。 The sensor packaging structure of claim 9, wherein each side of the sensing chip corresponds to and is perpendicular to at least two of the light-transmitting slots, and a plurality of the light-transmitting slots occupy an area of 25%~100% area of the annular configuration area. 一種感測器封裝結構,其包括:一基板;一感測晶片,呈方形且沿一預設方向設置於所述基板上,並且所述感測晶片電性耦接於所述基板;其中,所述感測晶片的一頂面包含有一感測區域;一光固化層,呈環形且設置於所述感測晶片的所述頂面上並圍繞於所述感測區域的外側;一透光層,具有位於相反側的一外表面與一內表面,並且所述透光層設置在所述光固化層上,以位於所述感測晶片的上方;其中,所述透光層的所述內表面、所述光固化層、及所述感測晶片的所述頂面共同包圍形成有一封閉空間;一遮蔽層,設置於所述透光層的所述內表面,所述遮蔽層包含有彼此間隔設置的多個遮蔽條;其中,相鄰的兩個所述遮蔽條彼此間隔的區域是對應於所述感測晶片的一個角落,並且每個所述遮蔽條形成有至少一個透光槽孔;其中,所述遮蔽層沿所述預設方向正投影至所述頂面所形成的一投影區域,其圍繞於所述感測區域的外側;以及 一封裝體,形成於所述基板;其中,所述感測晶片、所述光固化層、所述透光層、及所述遮蔽層皆埋置於所述封裝體內,並且所述透光層的至少部分所述外表面裸露於所述封裝體之外。 A sensor packaging structure, which includes: a substrate; a sensing chip, which is square and arranged on the substrate along a preset direction, and the sensing chip is electrically coupled to the substrate; wherein, A top surface of the sensing chip contains a sensing area; a photo-cured layer, which is annular and is disposed on the top surface of the sensing chip and surrounds the outside of the sensing area; a light-transmitting layer layer, having an outer surface and an inner surface located on opposite sides, and the light-transmitting layer is disposed on the photo-cured layer so as to be located above the sensing chip; wherein, the light-transmitting layer The inner surface, the photocurable layer, and the top surface of the sensing chip together form a closed space; a shielding layer is provided on the inner surface of the light-transmitting layer, and the shielding layer includes A plurality of shielding strips spaced apart from each other; wherein the area where two adjacent shielding strips are spaced apart from each other corresponds to a corner of the sensing chip, and each shielding strip is formed with at least one light-transmitting groove Hole; wherein the shielding layer is projected along the preset direction to a projection area formed by the top surface, which surrounds the outside of the sensing area; and A package formed on the substrate; wherein the sensing chip, the photocurable layer, the light-transmitting layer, and the shielding layer are all embedded in the package, and the light-transmitting layer At least part of the outer surface is exposed outside the package. 如請求項12所述的感測器封裝結構,其中,所述感測晶片的每個邊對應且平行於一個所述遮蔽條,並且每個所述遮蔽條的至少25%區域形成有至少一個所述透光槽孔。 The sensor packaging structure of claim 12, wherein each side of the sensing chip corresponds to and is parallel to one of the shielding strips, and at least 25% of the area of each of the shielding strips is formed with at least one The light-transmitting slot. 如請求項12所述的感測器封裝結構,其中,於每個所述遮蔽條中,至少一個所述透光槽孔與所述光固化層的內邊緣相隔有45微米~55微米的距離,並且至少一個所述透光槽孔與所述光固化層的外邊緣相隔有45微米~55微米的距離。 The sensor packaging structure of claim 12, wherein in each of the shielding strips, at least one of the light-transmitting slots is separated from the inner edge of the photo-cured layer by a distance of 45 microns to 55 microns. , and at least one of the light-transmitting slots is separated from the outer edge of the photo-cured layer by a distance of 45 microns to 55 microns. 如請求項12所述的感測器封裝結構,其中,於每個所述遮蔽條中,至少一個所述透光槽孔的寬度為所述光固化層的內邊緣與外邊緣之間的距離的25%~100%。 The sensor packaging structure of claim 12, wherein in each of the shielding strips, the width of at least one of the light-transmitting slots is the distance between the inner edge and the outer edge of the photo-cured layer. 25%~100%. 如請求項12所述的感測器封裝結構,其中,於每個所述遮蔽條中,至少一個所述透光槽孔呈長條狀且沿相對應所述遮蔽條的長度方向呈貫穿狀。 The sensor packaging structure of claim 12, wherein in each of the shielding strips, at least one of the light-transmitting slots is in the shape of a strip and penetrates along the length direction of the corresponding shielding strip. . 如請求項16所述的感測器封裝結構,其中,於每個所述遮蔽條中,至少一個所述透光槽孔的數量進一步限定為多個且其彼此平行。 The sensor packaging structure of claim 16, wherein in each of the shielding strips, the number of at least one light-transmitting slot is further limited to multiple and they are parallel to each other. 如請求項12所述的感測器封裝結構,其中,於每個所述遮蔽 條中,至少一個所述透光槽孔鄰近於相對應所述遮蔽條的一末端。 The sensor packaging structure of claim 12, wherein in each of the shielding Among the strips, at least one of the light-transmitting slots is adjacent to an end of the corresponding shielding strip. 如請求項12所述的感測器封裝結構,其中,於每個所述遮蔽條中,至少一個所述透光槽孔的數量進一步限定為多個且其各呈長條狀,並且每個所述透光槽孔沿相對應所述遮蔽條的寬度方向呈貫穿狀。 The sensor packaging structure of claim 12, wherein in each of the shielding strips, the number of at least one of the light-transmitting slots is further limited to a plurality, each of which is in the shape of a strip, and each The light-transmitting slots are penetrating along the width direction corresponding to the shielding strip. 如請求項19所述的感測器封裝結構,其中,所述感測晶片的每個邊對應且垂直於至少兩個所述透光槽孔。The sensor packaging structure of claim 19, wherein each side of the sensing chip corresponds to and is perpendicular to at least two of the light-transmitting slots.
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