TWI825905B - Led package structure providing rectangular light source - Google Patents

Abstract

The present invention provides a led package structure providing a rectangular light source, which comprises a solid crystal substrate, a light-emitting diode chip, a silicon substrate reflecting cup, and a long convex quartz glass lens. The die-bonding substrate has a set of conductive lines to connect the light-emitting diode chips. The silicon substrate reflector cup is a rectangular frame and further forms an accommodating space with the die-bonding substrate for accommodating the light-emitting diode chip. An elongated convex quartz glass lens is combined with a silicon substrate reflector. The effect of uniaxial refraction and condensing of the deep ultraviolet rays emitted by the light-emitting diode chip in the width direction by the long convex quartz glass lens, and the uniaxial parallel reflection light of the silicon substrate reflector in the width direction with the effect of concentrating light, a light-emitting diode package structure with a long strip light type is formed.

Description

Deep ultraviolet light-emitting diode packaging structure with strip-shaped light pattern

The present invention relates to a light-emitting diode packaging structure with a strip-shaped light pattern, so that the deep ultraviolet light emitted by the deep-ultraviolet light-emitting diode can be concentrated into a strip shape, and can improve the light utilization rate and the illumination intensity.

Please refer to Figure 1, which shows a conventional deep ultraviolet light-emitting diode packaging structure with a circular small-angle light pattern. Figure 1 is a schematic diagram of the packaging structure of a traditional deep ultraviolet light-emitting diode with a circular small-angle light pattern. The deep ultraviolet light emitting diode package 100 includes a deep ultraviolet light chip 110 fixed on a solid crystal substrate 120, and the solid crystal substrate 120 is square. The deep ultraviolet light chip 110 emits deep ultraviolet light. The height H of the vertical enclosure 130 is greater than the thickness T of the side surface of the deep ultraviolet chip 110, and forms an accommodating space with the solid crystal substrate 120, thereby accommodating the deep ultraviolet chip 110 in the accommodating space. The convex lens 140 is bonded to the vertical enclosure 130 via a bonding layer. Vertical enclosure 130 with round bottom. The deep ultraviolet light passes through the convex lens 140 to produce refraction and focusing effects, forming a circular small-angle light pattern.

Because based on the traditional packaging structure, the light emitted by the deep ultraviolet light emitting diode package 100 has a light emitting angle of about 50 degrees, or a circle of 30 degrees, which is difficult to meet the long light application market (for example, Such as flowing water sterilization equipment in water pipes, and continuous ink light curing equipment) needs. The long strip light application market has a demand for long strip light types that are necessary to improve light utilization and improve the illumination effect.

Traditionally, in order to make the light pattern emitted by the light source be strip-shaped, the light-emitting diodes 202 of a plurality of point light sources are arranged in a row at intervals to assemble a strip-shaped light-emitting module 200, as shown in Figure 2 . Figure 2 is a schematic diagram of a traditional strip-shaped light emitting module. Since the light-emitting diodes 202 on the strip-shaped light-emitting module 200 are still point light sources, the light pattern 302 emitted by each point light source is still basically circular, as shown in FIG. 3A. Figure 3A is a schematic diagram of the light pattern of a traditional strip-shaped light-emitting module.

Please refer to Figure 3B, which is a luminous angle graph. When a point light source emits light of different light intensities to various angles, the luminous angle of the point light source is defined as twice the luminous angle of 50% of the highest light intensity on the central axis (0 degree angle), as shown in the figure The relative luminous intensity vs. luminous angle curve shown in 4 is a standard graph with a luminous angle of 120 degrees. Shine this point light source on the wall, and the figure surrounded by 50% of the light intensity on the wall is defined as the light pattern, or commonly known as the light class. When the luminous angles are equal in both axes, the light pattern is circular. When the light pattern is circular, even if the circle can be changed into various sizes, the light pattern arranged still cannot achieve the uniformity of light and the narrow length of the light pattern required for water pipe sterilization, continuous curing irradiation, etc. What's more, It is difficult to meet its basic needs of easy production and cost control.

Please refer to Figure 4. Figure 4 is a schematic diagram of a linear light condensing device of the previous case. The previous case is Chinese Patent Publication No. 106195913A, which discloses a linear light condensing device, including a strip-shaped light-emitting module of point light source elements 12 arranged in a row. 1. And cooperate with a long transparent condenser cover 2 belonging to secondary optics, so as to gather the light of the arranged point light sources 12 on a straight line as much as possible. However, this method requires the addition of secondary optics lenses and also increases the cost. cost of manufacturing and assembly.

As mentioned above, the purpose of the present invention is to overcome the shortcomings of the prior art and propose a light-emitting diode packaging structure with a strip-shaped light pattern. Through this packaging structure, the deep ultraviolet light emitted by the deep ultraviolet light-emitting diode can be It can be gathered into long strips to improve light utilization and illumination, and save costs.

According to an embodiment of the present invention, a light-emitting diode packaging structure with a strip-shaped light pattern is provided, which includes: a solid crystal substrate with a set of conductive lines, and the set of conductive lines are electrically connected to the solid crystal substrate; a deep The ultraviolet light-emitting diode chip is fixed on the solid crystal substrate, and the set of conductive lines are electrically connected to the deep ultraviolet light-emitting diode chip; a silicon substrate reflective cup has a first surface and a second surface, and the silicon substrate reflects The first surface of the cup is combined with the solid crystal substrate. The silicon substrate reflective cup is a rectangular frame with an upper opening and a lower opening. The upper opening is connected to the lower opening. The lower opening is provided on the first surface. , the upper opening is provided on the second surface, and the silicon substrate reflective cup has four reflective surfaces inward toward the center, and the four reflective surfaces respectively form an angle with the first surface; the lower opening of the silicon substrate reflective cup is The length is greater than or equal to 3 times the width, and the thickness of the silicon substrate reflective cup is greater than or equal to 3 times the thickness of the deep ultraviolet light-emitting diode chip. The silicon substrate reflective cup and the solid crystal substrate form an accommodation space for accommodation. The deep ultraviolet light emitting diode chip; and, a long convex quartz glass lens, is combined with the second surface of the silicon substrate reflective cup, the bottom width of the long convex quartz glass lens is greater than or equal to the silicon substrate reflective cup 2 times the width of the upper opening; the effect of uniaxial refraction and concentration of the deep ultraviolet light emitted by the deep ultraviolet light-emitting diode chip in the width direction through the long convex quartz glass lens, and the silicon The substrate reflection cup uniaxially parallel reflects light and condenses the light in the width direction, forming A light-emitting diode packaging structure with a strip-shaped light pattern. ’

According to an embodiment of the present invention, the solid crystal substrate is a ceramic substrate.

According to another embodiment of the present invention, a first bonding layer is further included. The first bonding layer is disposed between the silicon substrate reflective cup and the solid crystal substrate. The first bonding layer is a polymer adhesive or an inorganic adhesive. agent, solder layer or gold-tin alloy layer.

According to another embodiment of the present invention, a second bonding layer is further included. The second bonding layer is disposed between the silicon substrate reflective cup and the elongated convex quartz glass lens. The second bonding layer is a polymer adhesive. , inorganic binder, solder layer or gold-tin alloy layer.

In summary, the present invention uses a light-emitting diode packaging structure with a strip-shaped light pattern, thereby allowing the deep ultraviolet light emitted by the deep-ultraviolet light-emitting diode to be concentrated into a long strip, thereby improving the light utilization rate and Improve illumination and save costs.

1:Light-emitting module

12:Point light source component

2: condenser mask

100: Deep UV light emitting diode packaging

110:Deep UV chip

120:Solid crystal substrate

130:Vertical domination

140:Convex lens

202:Light emitting diode

302:Light type

500: Strip-shaped light-emitting diode package

510:Deep UV light emitting diode chip

520: Solid crystal substrate

530:Silicon substrate reflective cup

550: Long convex quartz glass lens

C1: first bonding layer

C2: Second bonding layer

H: height

L1, L4, L6: length

L2, L3, L5: Width

OB: lower opening

OT: top opening

P1: First side

P2: Second side

R1: first reflective surface

R2: Second reflective surface

R3: The third reflective surface

R4: The fourth reflective surface

T, T1, T2: Thickness

Figure 1: A traditional deep ultraviolet light-emitting diode with a circular small-angle light pattern.

Figure 2: Schematic diagram of a traditional strip-shaped light-emitting module.

Figure 3A: Schematic diagram of the light pattern of a traditional strip-shaped light emitting module.

Figure 3B: Luminous angle graph.

Figure 4: Schematic diagram of the linear condensing device of the previous solution.

FIG. 5A is a schematic structural diagram of a light-emitting diode package with a strip-shaped light pattern according to the present invention.

Figure 5B is a cross-sectional view of the present invention along line A-A' of Figure 5A.

5C is a top view of the light-emitting diode package structure with a strip-shaped light pattern according to the present invention.

Figure 6A is a schematic diagram of the silicon wafer substrate of the present invention.

FIG. 6B is a schematic diagram of the silicon wafer substrate after etching according to the present invention.

Figure 6C is a schematic diagram of the silicon substrate reflective cup of the present invention.

Figure 7 is a schematic diagram of the thickness of the silicon substrate reflective cup and the deep ultraviolet light-emitting diode chip of the present invention.

8A is a schematic diagram of a strip-shaped light-emitting diode package according to an embodiment of the present invention.

FIG. 8B shows a light emitting diode package with a conventional convex quartz glass lens width.

FIG. 9 is a schematic diagram of the light emission of the strip-shaped light-emitting diode packaging structure of the present invention.

In order to make the description of the present disclosure more detailed and complete, reference may be made to the attached drawings and the various embodiments described below. The same numbers in the drawings represent the same or similar components. However, the embodiments provided are not intended to limit the scope of the present invention, and the description of the structural operations is not intended to limit the order of execution. Any structure recombined by components to produce a device with equal efficacy is the result of this invention. Scope covered by the invention.

Each embodiment of the present invention will be described in detail below, with drawings as examples. In addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments. Easy substitutions, modifications, and equivalent changes of any described embodiments are included in the scope of this case, and are subject to the scope of subsequent patents. Accurate. In the description of the specification, many specific details are provided in order to allow the reader to have a more complete understanding of the present invention; however, the present invention may still be implemented without some or all of these specific details. In addition, well-known steps or components are not described in detail to avoid unnecessarily limiting the present invention. The same or similar elements in the drawings will be represented by the same or similar symbols. Please note that the diagrams are for schematic purposes only and do not represent the actual components. Size or quantity unless otherwise stated. The directions described in this article are based on the diagram as a reference.

The following embodiments disclose a light-emitting diode packaging structure and a light-emitting diode packaging module, both of which include light-emitting diode packaging structures and light-emitting diodes.

Please refer to FIGS. 5A, 5B, and 5C. FIG. 5A is a schematic three-dimensional view of the light-emitting diode package structure with a strip-shaped light pattern according to the present invention. Figure 5B is a cross-sectional view of the present invention along line A-A' of Figure 5A. 5C is a top view of the light-emitting diode package structure with a strip-shaped light pattern according to the present invention.

Figure 5C is a cross-sectional view of the present invention along line A-A' of Figure 5A. The light-emitting diode package 500 with a strip-shaped light pattern includes a deep ultraviolet light-emitting diode chip 510 and a solid crystal substrate 520 . The deep ultraviolet light emitting diode chip 510 is a deep ultraviolet light emitting diode chip with a wavelength of 200~320nm. In this embodiment, the length L6 of the outer dimensions of the silicon substrate reflective cup 530 is 10 mm and the width is 6.6 mm. The length L6 and the width L5 of the opening OT on the rectangular silicon substrate reflective cup 530 are 6.7 mm and 3.3 mm, respectively. The length L1 of the opening OB under the cup 530 is 5 mm, and the width L2 is 1.65 mm. It should be noted that this size is only for illustration and is not intended to limit the scope of the present invention.

The size of the deep ultraviolet light emitting diode chip 510 is 40mil (ie, length x width 1mm), and its thickness is 400um. The deep ultraviolet light-emitting diode chip 510 is fixed on a die-solid substrate 520 with a thickness of 0.7 mm in a flip-chip manner. The solid crystal substrate 520 is made of aluminum nitride ceramic substrate. The solid crystal substrate 520 has a set of conductive lines to electrically connect the deep ultraviolet light emitting diode chip 510 to the positive and negative electrodes (not shown) on the surface of the packaging structure.

Please refer to Figures 6A, 6B, and 6C. Figure 6A is a schematic diagram of the silicon wafer substrate of the present invention. FIG. 6B is a schematic diagram of the silicon wafer substrate after etching according to the present invention. Figure 6C is a schematic diagram of the silicon substrate reflective cup of the present invention. The silicon wafer substrate undergoes a mask etching process to form a bevel on the <111> crystal plane. by cutting method, Process silicon substrate reflective cup 530.

The silicon substrate reflective cup 530 is a single crystal silicon wafer substrate. After the photomask etching process, due to the characteristics of the single crystal silicon wafer substrate material, four bright crystal planes with an included angle of 55 degrees will be formed. After cutting, a A plurality of rectangular silicon substrate reflective cups 530.

The silicon substrate reflective cup 530 has a first surface P1 and a second surface P2. The first surface P1 of the silicon substrate reflective cup 530 is combined with the solid crystal substrate 520 . The silicon substrate reflection cup is a rectangular frame with an upper opening OT and a lower opening OB. The upper opening OT is connected to the lower opening OB. The lower opening OB is provided on the first surface P1, and the upper opening OT is provided on the second surface P2. The silicon substrate reflective cup 530 has four reflective surfaces (a first reflective surface R1, a second reflective surface R2, a third reflective surface _R3 and a fourth reflective surface R4) toward the inner side of the center. The four reflective surfaces are respectively connected with the first surface. P1 has an included angle of 55 degrees. The first reflective surface R1, the second reflective surface R2, the third reflective surface _R3 and the fourth reflective surface R4 are bright inclined surfaces.

Because the silicon substrate reflective cup targets deep ultraviolet light with a wavelength of 275nm and has a higher reflectivity than ordinary metal reflective surfaces, it can effectively reflect the deep ultraviolet light emitted by the chip. The deep ultraviolet light emitted by the deep ultraviolet light-emitting diode chip 510 to the side is mostly absorbed by the flat and bright silicon single crystal crystal surfaces (i.e., the first reflective surface R1, the second reflective surface R2, the third reflective surface _R3 and the third reflective surface R3). The four reflective surfaces R4) reflect upward in the form of parallel reflection.

The present invention uses a silicon substrate reflective cup 530 of normal thickness to replace the traditional dam, because most of the deep ultraviolet light emitted to the side by the deep ultraviolet light emitting diode chip 510 is reflected in parallel by the flat and bright silicon single crystal crystal surface. Reflecting upward can increase the light extraction efficiency of the packaging structure by about 10%. The length L1 of the opening OB under the silicon substrate reflective cup 530 is greater than or equal to three times the width L2. The thickness T1 of the silicon substrate reflective cup 530 is greater than or equal to three times the thickness T2 of the deep ultraviolet light emitting diode chip 510 . In this embodiment, please refer to Figure 7. Figure 7 shows the reflection of the silicon substrate of the present invention. Schematic diagram of cup 530 and thickness T2 of deep ultraviolet light emitting diode wafer 510. In this embodiment, the thickness T1 of the silicon substrate reflective cup 530 is 1.2 mm, the thickness T2 of the deep ultraviolet light emitting diode chip 510 is 0.4 mm, and the thickness T1 of the silicon substrate reflective cup 530 is the deep ultraviolet light emitting diode chip 510 3 times the thickness of T2. The amount of reflected light reflected from the two reflective surfaces can be increased, so that the light energy emitted by the chip to all directions is more concentrated toward the central axis. The thickness T1 of the reflective silicon substrate reflective cup 530 is 1.2 mm, which is approximately three times the thickness T2 of the deep ultraviolet light emitting diode chip 510. It should be noted that the thickness T1 of the reflective silicon substrate reflective cup 530 of the present invention is different from the deep ultraviolet light emitting diode chip 510. The ratio of the thickness T2 of the polar body wafer 510 is greater than or equal to 3 times. Its function is to increase the area of the reflective surface of the rectangular silicon substrate reflective cup 530 and increase the reflection amount of deep ultraviolet light reflected from the two reflective surfaces in the width and axial direction, with similar parallel reflection and concentrated deep ultraviolet light. Compared with the thickness of the reflective silicon substrate reflective cup 530 of 0.5mm (not shown), the light divergence angle can be more convergent from 150 degrees to 117 degrees.

The silicon substrate reflective cup 530 and the solid crystal substrate 520 form an accommodation space for accommodating the deep ultraviolet light emitting diode chip 510 . The silicon substrate reflective cup 530 of the present invention is made of silicon substrate, and its thermal expansion coefficient is close to that of the solid crystal substrate 520, which is made of a ceramic substrate, and the elongated convex quartz glass lens 550 of quartz, and is not easily caused by the difference in thermal expansion between the two interfaces. Stress causes splitting between structures, which improves the overall reliability of the packaging structure.

Please refer to Figures 5A and 5B. The elongated convex quartz glass lens 550 is combined with the second surface P2 of the silicon substrate reflective cup 530. The bottom width L3 of the elongated convex quartz glass lens 550 is greater than or equal to twice the width L5 of the opening OT on the silicon substrate reflective cup 530 . Through the elongated convex quartz glass lens 550, the deep ultraviolet light emitted by the deep ultraviolet light emitting diode chip 510 is refracted and condensed in the uniaxial direction of the upper opening OT width L5, and the silicon substrate reflective cup 530 has the effect of uniaxial parallel reflection of light and concentrating light in the direction of L3 of the bottom width of the elongated convex quartz glass lens 550 As a result, a light-emitting diode packaging structure 500 with a strip-shaped light pattern is formed.

The light-emitting diode packaging structure 500 with a strip-shaped light pattern further includes a first bonding layer C1 and a second bonding layer C2. The first bonding layer C1 is disposed between the silicon substrate reflective cup 530 and the die-hardening substrate 520 . The first bonding layer C1 of the present invention is a polymer adhesive, an inorganic adhesive, a solder layer or a gold-tin alloy layer. The second bonding layer C2 is disposed between the silicon substrate reflective cup 530 and the elongated convex quartz glass lens 550 . The second bonding layer C2 of the present invention is a polymer adhesive, an inorganic adhesive, a solder layer or a gold-tin alloy layer. The elongated convex quartz glass lens 550 is bonded to the silicon substrate reflective cup 530 through a polymer adhesive. The elongated convex quartz glass lens 550 has nearly complete penetration of deep ultraviolet light with a wavelength of 275 nm.

In this embodiment, the bottom of the elongated convex quartz glass lens 550 is rectangular, with a length of 10 mm, a width of 6.6 mm, and a height of 7 mm. The width of the elongated convex quartz glass lens 550 is 3.3 mm and the width of the opening OT on the rectangular silicon substrate reflective cup 530 is 3.3 mm. 2 times. This width ratio is greater than or equal to 2 times. The purpose is to concentrate the deep ultraviolet light reflected from the two reflecting surfaces in the width and axial direction of the reflecting cup at the bottom center of the elongated convex quartz glass lens. The lens has the effect of better parallel refraction and concentrated deep ultraviolet light.

In this embodiment, the bottom width L3 of the rectangular convex quartz glass lens 550 is set to twice the width L5 of the opening OT on the rectangular silicon substrate reflection cup 530 (here the width is 3.3mm), that is, 6.6mm. The purpose In order to make the light reflected from the left and right first reflective surfaces R1 and third reflective surfaces R3 of the silicon substrate reflection cup 530 relatively concentrated on the bottom center area of the elongated convex quartz glass lens 550, so that the light passes through the elongated convex quartz glass lens. The light refracted by 550 has better parallelism and concentration. In other words, the light is concentrated and emitted from the bottom center area of the elongated convex quartz glass lens 550, that is, the elongated convex quartz glass lens 550 can produce deep ultraviolet light. Diode This has the effect of refracting and concentrating the light emitted in all directions by the bulk chip 510 toward the central axis. The requirement that the outgoing light rays be concentrated at one point is also the basic design principle of a convex lens with the purpose of concentrating light.

That is, the width L3 of the bottom of the elongated convex quartz glass lens 550 in this embodiment is 6.6 mm, and the width L3 in the conventional art is 4.2 mm. As shown in Figures 8A and 8B, when the reflected light from the first reflective surface R1 and the third reflective surface R3 are both 60-degree directions, the light can be approximately refracted by the elongated convex quartz glass lens 550. The divergence angle converges from 45 degrees (shown in Figure 8A) to 23 degrees (shown in Figure 8B). According to the length value of the embodiment of the present invention, the aspect ratio of the strip-shaped light pattern that can be produced can reach about 6 to 8 times. 8A is a schematic diagram of a strip-shaped light-emitting diode package according to an embodiment of the present invention. 8B is a light emitting diode package with the width of a convex quartz glass lens known in the art.

To sum up, the long-shaped convex quartz glass lens 550 of quartz can achieve a high degree of parallel refraction and concentration of the deep ultraviolet light emitted by the deep ultraviolet light emitting diode chip 510 in the uniaxial direction of the width direction. In addition, the rectangular silicon substrate reflective cup 530 has the effect of large-area parallel reflection and condensation of light in the width direction of the uniaxial direction, plus the effect of the length-to-width ratio of the opening OB under the rectangular silicon substrate reflective cup 530, forming deep ultraviolet light. A strip-shaped light-emitting diode packaging structure 500 is shown in FIG. 9 . FIG. 9 is a schematic diagram of the light emission of the strip-shaped light-emitting diode packaging structure of the present invention.

The present invention is of course not limited to the description based on the respective embodiments. On the contrary, the invention encompasses every new feature and every combination of features, and in particular every combination of individual features of the respective claims - or of the different embodiments, when the relevant feature or the relevant combination itself is not obvious. When shown in the patent scope of each application or in each embodiment, it also belongs to the present invention.

However, the above are only examples of the present invention and should not be limited thereto. Within the scope of implementation of the present invention, any simple equivalent changes and modifications made based on the patent application scope of the present invention and the contents of the patent specification are still within the scope covered by the patent of the present invention.

500: Strip-shaped light-emitting diode package

510:Deep UV light emitting diode chip

520: Solid crystal substrate

530:Silicon substrate reflective cup

C1: first bonding layer

C2: Second bonding layer

L3: Width

OB: lower opening

OT: top opening

P1: First side

P2: Second side

R2: Second reflective surface

R4: The fourth reflective surface

T1:Thickness

Claims (6)

A light-emitting diode packaging structure with a strip-shaped light pattern, including: a solid crystal substrate with a set of conductive lines electrically connected to the solid crystal substrate; a deep ultraviolet light emitting diode chip fixed on The solid crystal substrate, the set of conductive lines are electrically connected to the deep ultraviolet light-emitting diode chip; a silicon substrate reflective cup having a first side and a second side, the first side of the silicon substrate reflective cup and the solid The silicon substrate reflection cup is a rectangular frame with an upper opening and a lower opening. The upper opening is connected to the lower opening. The lower opening is disposed on the first surface, and the upper opening is disposed on the second surface. surface, the silicon substrate reflective cup has four reflective surfaces on the inner side toward the center, and the four reflective surfaces respectively form an angle with the first mask; the length of the lower opening of the silicon substrate reflective cup is greater than or equal to 3 times the width, and the The thickness of the silicon substrate reflection cup is greater than or equal to 3 times the thickness of the deep ultraviolet light emitting diode chip, and the silicon substrate reflection cup and the solid crystal substrate form an accommodation space to accommodate the deep ultraviolet light emitting diode chip; And, a long convex quartz glass lens is combined with the second surface of the silicon substrate reflective cup, and the bottom width of the long convex quartz glass lens is greater than or equal to 2 times the width of the upper opening of the silicon substrate reflective cup; Through the elongated convex quartz glass lens, the deep ultraviolet light emitted by the deep ultraviolet light-emitting diode chip is refracted and condensed in the uniaxial direction in the width direction, and the silicon substrate reflective cup is uniaxially reflected in the width direction. The effect of directional parallel reflection of light and concentrating light forms a light-emitting diode packaging structure with a strip-shaped light pattern. As claimed in claim 1, the light-emitting diode packaging structure with a strip-shaped light pattern, wherein the The solid crystal substrate is a ceramic substrate. The light-emitting diode packaging structure with a strip-shaped light pattern of claim 1 further includes a first bonding layer, the first bonding layer is disposed between the silicon substrate reflective cup and the solid crystal substrate, and the first bonding layer The bonding layer is a polymer binder, inorganic binder, solder layer or gold-tin alloy layer. As claimed in claim 1, the light-emitting diode packaging structure with a strip-shaped light pattern further includes a second bonding layer, the second bonding layer is disposed between the silicon substrate reflective cup and the elongated convex quartz glass lens, The second bonding layer is a polymer adhesive, an inorganic adhesive, a solder layer or a gold-tin alloy layer. For example, in claim 1, the light-emitting diode packaging structure with a strip-shaped light pattern is provided, wherein the included angle is 55 degrees and the reflective surface is a bright slope. For example, in the light-emitting diode packaging structure with a strip-shaped light pattern of claim 1, the deep ultraviolet light emitting diode chip is a deep ultraviolet light emitting diode chip with a wavelength range of 200~320 nm.

Images