TWI825615B - Substrate processing system and substrate processing method - Google Patents

Abstract

The disclosure provides a substrate processing system and method. The substrate processing system includes a preheating station, a PECVD processing station, a cooling station and a conveying device. The PECVD processing station includes an upper chamber body, a first electrode, a lower chamber body, a second electrode, a pedestal set on the lower chamber body, a tray made of conductive material, and the bottom end of the upper chamber body is provided with a radio frequency gasket; The PECVD processing station is used for PECVD deposition of films on preheated substrates. When the bottom susceptor of the PECVD processing station is heated, the susceptor moves upward until contacting the back face of the tray carrying the substrate, and pushes the edge of the front face portion of the tray into contact with the radio frequency gasket of the PECVD processing station, so that the tray forms a grounding loop between the radio frequency gasket and the upper chamber main body of the PECVD processing station; the present disclosure can improve the problem of non-uniformity of plasma deposition on the substrate.

Description

A substrate processing system and method thereof

The present invention relates to the field of solar cells, and in particular, to a substrate processing system and a method thereof.

Solar cells, also known as photovoltaic cells, are power generation technologies that use the photoelectric effect to directly convert solar radiation into electrical energy. They have the advantages of sufficient resources, cleanliness, safety, and long service life, and are considered to be one of the most promising renewable energy technologies. one.

Currently, silicon heterojunction cells in solar cells have the advantages of low-temperature preparation, simple process steps, superior temperature coefficient, and good product stability, and are expected to become one of the mainstream technologies in the optoelectronic industry. The silicon heterojunction cell includes: a single crystal silicon substrate. After the front and rear surfaces of the single crystal silicon substrate are textured, intrinsic layers located on the front and back of the single crystal silicon substrate are formed, and N-type doped layers on the front intrinsic layer are formed. The P-type doped layer on the impurity layer and the back intrinsic layer is then formed into a conductive transparent layer on the N-type doped layer and a conductive transparent layer on the P-type doped layer.

However, during the processing of the substrate, the substrate is carried on a tray, and then the tray carrying the substrate is transported to the reaction chamber of the processing station for processing. The processing station has a base which forms part of the electrode ground. As the base moves up and down, the ground connection may be through different materials connections, thus potentially creating different potentials within the reaction chamber. Differences in ground potentials can cause arcing and also interfere with the uniformity of plasma deposition on the substrate.

Therefore, there is an urgent need for a substrate processing solution that can improve the problem of plasma deposition non-uniformity on the substrate.

The present invention provides a substrate processing system and a method thereof to improve the problem of plasma deposition non-uniformity on the substrate.

In a first aspect, the present invention provides a system for substrate processing, including: a preheating station, a PECVD processing station, a cooling station and a conveying device; the conveying device is configured to sequentially place a tray carrying a substrate in the preheating station. Station, PECVD processing station, and cooling station; the preheating station is used to preheat the substrate on the tray; the PECVD processing station includes an upper chamber body, a first electrode provided on the upper chamber body, and a lower chamber The chamber body, the second electrode provided on the lower chamber body, the base provided on the lower chamber body, the tray made of conductive material, and the bottom end of the upper chamber body is provided with a radio frequency gasket; the PECVD processing station is During the PECVD deposition of the film layer on the preheated substrate, when the bottom base of the PECVD processing station is heated, the base moves upward until it contacts the back of the tray carrying the substrate, and pushes the edge of the front part of the tray to be in contact with the PECVD process The radio frequency gasket of the station is in contact, so that a ground loop is formed between the tray and the upper chamber body of the PECVD processing station through the radio frequency gasket; the cooling station is used to cool the deposited substrate.

The beneficial effect of the substrate processing system provided by the present invention is that by arranging a radio frequency gasket at the bottom end of the upper chamber body of the PECVD processing station, a ground loop is formed between the tray and the upper chamber body through the radio frequency gasket. This arrangement enables good peripheral grounding to ensure a good return path for the RF, making the ground potential within the closed cavity the same, so no arcing occurs, and eliminating the impact of different ground potentials on the plasma uniformity above the substrate.

Optionally, the system further includes a loading lock and an unloading lock; the loading lock is used to pump the air pressure in the chamber to below atmospheric pressure before preheating the substrate at the preheating station; The unloading lock is used to restore the air pressure in the chamber to atmospheric pressure.

Optionally, the system further includes a pallet loading station and a pallet unloading station; the pallet loading station is used to load the substrate from the substrate box to the pallet; the pallet unloading station is used to unload the substrate from the pallet to the substrate. in the box.

Optionally, the system further includes a memory configured to accommodate a substrate cassette carrying a plurality of substrates.

Optionally, when the base is not heated, the tray is located in the cavity formed by the upper chamber body and the lower chamber body, the tray is separated from the upper chamber body, and the tray The dimensions are larger than the dimensions of the base.

Optionally, the upper chamber body of the PECVD processing station is provided with a nozzle, which is used to blow outside the contact point between the upper chamber body and the tray when the front edge of the tray is in contact with the RF gasket. Non-reactive gas, forming a gas barrier.

Optionally, when the edge of the front portion of the tray is in contact with the radio frequency gasket, a sealed cavity is formed between the first electrode, the tray, the upper chamber body, and the second electrode.

Optionally, the distance between the first electrode and the second electrode ranges from 5 mm to 30 mm. The process chamber design can limit the plasma to provide repeatable plasma conditions and by using a distance closer to 10 mm. The electrode spacing increases the deposition rate.

Optionally, the first electrode is provided with a gas nozzle for blowing plasma to the substrate on the tray.

Optionally, the first electrode can move up and down for adjusting the gap between the first electrode and the tray.

In a second aspect, the present invention provides a method for processing a substrate, including the following steps: providing a plurality of trays, and the substrate is configured to be loaded onto a first tray with its back facing upward; loading the first tray carrying the substrate onto the first tray; into the lock and sucked to low pressure; transport the first tray to the preheating station under vacuum, preheat the first tray carrying the substrate, and transport the preheated first tray and substrate to the PECVD processing station ; When the base of the PECVD processing station is heated, the base moves upward until it contacts the back of the first tray, and pushes the edge of the front part of the first tray into contact with the RF washer, so that the first tray contacts the RF washer through the RF washer. A ground loop is formed between the upper chamber bodies, and the gas nozzle on the first electrode blows plasma to the substrate on the first tray, forming the first I layer on the back of the substrate; the first tray carrying the substrate is transported into the unload lock to release to the atmosphere; flip the substrate face up and load it onto the second pallet; load the second pallet carrying the substrate into the load lock and be pumped to low pressure; The second tray is transported to the preheating station under vacuum, the second tray carrying the substrate is preheated, the preheated second tray and the substrate are transported to the PECVD processing station, and a second I is formed on the back side of the substrate. layer; Form an N layer on the second I layer; transport the second tray carrying the substrate to the unloading lock to be released into the atmospheric environment; flip the substrate to the back side and load it onto the third pallet; transfer the substrate carrying The third tray is loaded into the load lock and sucked to low pressure; the third tray is transported to the preheating station under vacuum, the third tray carrying the substrate is preheated, and the preheated third tray is The substrate is transported to the PECVD processing station, and the P layer is formed on the first I layer on the back side of the substrate; the third tray carrying the substrate is transported to the unloading lock to be released to the atmospheric environment, and the substrate is unloaded to the substrate in the box.

For third parties, the present invention also provides another method for substrate processing, including the following steps: providing a plurality of pallets, and the substrates are configured to be loaded onto the first pallet with the back facing upward; loading the first pallet carrying the substrate into the loading lock and is sucked to low pressure; transport the first tray to the preheating station under vacuum, preheat the first tray carrying the substrate, and transport the preheated first tray and substrate to PECVD processing station; when the base of the PECVD processing station is heated, the base moves upward until it contacts the back of the first tray, and pushes the edge of the front part of the first tray into contact with the radio frequency gasket, so that the first tray passes through the radio frequency A ground loop is formed between the gasket and the upper chamber body. The gas nozzle on the first electrode blows plasma to the substrate on the first tray, forming the first I layer on the back of the substrate; the first layer carrying the substrate is Pallets are conveyed into unload locks for release to the atmosphere; The first tray is transported to the PECVD processing station under vacuum, and the P layer is formed on the first I layer on the back side of the substrate; the first tray carrying the substrate is transported to the unloading lock to be released to the atmospheric environment ; Flip the substrate face up and load it onto the second pallet; Load the second pallet carrying the substrate into the load lock and be sucked to low pressure; Transport the second pallet to the preheater under vacuum Station, preheat the second tray, and transport the preheated second tray to the PECVD processing station; when the base of the PECVD processing station is heated, the base moves upward until it contacts the back of the second tray, and is pushed The edge of the front part of the second tray is in contact with the RF gasket, so that a ground loop is formed between the RF gasket and the upper chamber body. slurry to form the second I layer on the front side of the substrate; transport the second tray to the PECVD processing station under vacuum to form the Nth layer on the second I layer on the front side of the substrate; transfer the The second pallet is conveyed into the unload lock for release to the atmosphere and the substrates are unloaded into the substrate cassette.

Other features will be described in the detailed description.

1: Tray

2: base

4:Nozzle

5: Upper chamber body

6: First electrode

7: Second electrode

8: RF gasket

9: Lower chamber body

10:Substrate processing system

11: Subsystem 1 for I layer deposition on backside

12: Subsystem 2 for I and N layer deposition on the front side

13: Subsystem 3 for P layer deposition on backside

14: Subsystem 1 for I and P layer deposition on the backside

101:Substrate box storage station

102:Transfer Station-Loading Station

103:Pallet preparation station

104:Load lock chamber

105: Preheating room

106:PECVD processing station

107:PECVD processing station

108: Unload Lock Room

109:Unloading station

110: Transfer station

111: Flip Station

112:Rolling station

113: First horizontal scrolling station

114: Second horizontal scroll station

115:PECVD processing station

116:Substrate box stocker

117:Substrate box storage

118:Inspection walkway

119: Vacuum pump

In order to make the above and other objects, features, advantages and embodiments of the present invention more clearly understandable, the accompanying drawings are described as follows: Figure 1 shows a PECVD processing station provided by the present invention; Figure 2A shows a substrate processing system provided by the present invention including the IPIN processing flow of the PECVD processing station in Figure 1; Figure 2B shows a substrate processing system provided by the present invention including the IINP processing flow of the PECVD processing station in Figure 1. Substrate processing system; Figure 3 shows a schematic flow chart of a substrate processing method based on the substrate processing system shown in Figure 2B; Figure 4 shows a schematic flow chart of a substrate processing method based on the substrate processing system shown in Figure 2A.

The technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention. Among them, in the description of the embodiments of the present invention, the terms used in the following embodiments are only for the purpose of describing specific embodiments and are not intended to limit the present application. As used in the specification of this application and the appended claims, the singular expressions "a", "said", "above", "the" and "the" are intended to also include, for example, "a or" "plural" unless the context clearly indicates otherwise. It should also be understood that in the following embodiments of this application, "at least one" and "one or more" refer to one or more than two (including two). The term "and/or" is used to describe the relationship between related objects, indicating that there can be three relationships; for example, A and/or B can mean: A exists alone, A and B exist simultaneously, and B exists alone, where A and B can be singular or plural. The character "/" generally indicates that the related objects are in an "or" relationship.

Various exemplary embodiments and details, where relevant, are described below with reference to the accompanying drawings. It should be noted that the drawings may or may not be drawn to scale, and that elements of similar structure or function are designated by the same reference numerals throughout the drawings. It should also be noted that the accompanying drawings are only intended to facilitate implementation of Description of the example. They are not intended to be an exhaustive description of the invention or to limit the scope of the invention. Additionally, the illustrated embodiments need not have all aspects or advantages demonstrated. An aspect or advantage described in connection with a particular embodiment is not necessarily limited to that embodiment, and may be practiced in any other embodiment, even if not so shown, or if not explicitly described.

In order to make the above objects, features and beneficial effects of the present invention more apparent, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

In order to solve the problems existing in the prior art, embodiments of the present invention provide a plasma enhanced chemical vapor deposition (PECVD) processing station. As shown in Figure 1, the PECVD processing station has a unique process chamber design. , that is, the PECVD processing station includes an upper chamber body 5, a first electrode 6 provided on the upper chamber body 5, a lower chamber body 9, a second electrode 7 provided on the lower chamber body 9, and a second electrode 7 provided on the lower chamber body 9. The base 2 of 9, the tray 1 made of conductive material, and the bottom end of the upper chamber body 5 are provided with radio frequency gaskets 8. The first electrode 6 is provided with a gas nozzle for purging plasma onto the substrate on the tray. A nozzle 4 is provided inside the lower chamber body 9 , and the nozzle 4 is used to purge non-reactive gas to the back of the base 2 .

Before the base is heated, in (a) of Figure 1, the tray is located in the cavity formed by the upper chamber body 5 and the lower chamber body 9. The tray 1 and the upper chamber The chamber body 5 is separated, and the tray 1 is used to carry the substrate. The size of the tray 1 is larger than the size of the base 2; this arrangement can ensure that the plasma will not leak to the base 2, thereby preventing the substrate on the back from being contaminated. .

When the base 2 is heated, as shown in (b) of Figure 1 , the base 2 is heated and moves upward until it contacts the back of the tray 1, and pushes the edge of the front part of the tray 1 into contact with the RF gasket 8, so that the The tray 1 forms a ground loop between the radio frequency gasket 8 and the upper chamber body 5 . This setup enables good peripheral grounding to ensure a good return path for the RF, so that the ground circuit inside the closed cavity The potential is the same, so arcing will not occur and the impact of different ground potentials on the plasma uniformity above the substrate is eliminated.

In addition, when the edge of the front part of the tray 1 is in contact with the radio frequency gasket 8, a sealed cavity is formed between the first electrode 6, the tray 1 and the upper chamber body 5. Optionally, the sealed cavity is in a vacuum environment. On the one hand, the plasma is confined to the tray area, maximizing the effect of plasma deposition or etching on the substrate surface; on the other hand, the vacuum environment helps reduce impurities in the air from mixing into the closed cavity, ensuring the plasma reaction effect .

In addition, when the edge of the front part of the tray 1 is in contact with the radio frequency gasket 8, a sealed cavity is formed between the first electrode 6, the tray 1 and the upper chamber body 5. Optionally, the sealed cavity is in a vacuum environment. On the one hand, the plasma is confined to the tray area, maximizing the effect of plasma deposition or etching on the substrate surface; on the other hand, the vacuum environment helps reduce impurities in the air from mixing into the closed cavity, ensuring the plasma reaction effect . The first electrode can move up and down to adjust the gap between the first electrode and the tray. The process chamber design can limit the distance between the first electrode and the second electrode to range from 5mm to 30mm. In addition, it can Confining the plasma for reuse increases the deposition rate.

Based on the above PECVD processing station, the present invention provides a substrate processing system, which includes a preheating station, a PECVD processing station, a cooling station and a conveying device. Wherein, the conveying device is configured to sequentially convey the tray carrying the substrate in the preheating station, the PECVD processing station, and the cooling station; the preheating station is used to preheat the substrate on the pallet.

The PECVD processing station includes: an upper chamber body, a first electrode provided on the upper chamber body, a lower chamber body, a second electrode provided on the lower chamber body, a base provided on the lower chamber body, and The tray made of conductive material and the bottom end of the upper chamber body are equipped with radio frequency gaskets; the PECVD processing station is used to deposit the PECVD film layer on the preheated substrate, and the bottom base of the PECVD processing station is During heating, the base moves upward until it contacts the back of the tray carrying the substrate, and pushes the edge of the front part of the tray into contact with the RF gasket of the PECVD processing station, so that the tray passes through the RF gasket and the upper chamber body of the PECVD processing station. A ground loop is formed between them; the cooling station is used to cool the deposited substrate.

Optionally, the system also includes a loading lock and an unloading lock; the loading lock is used to pump the air pressure in the chamber to below atmospheric pressure before preheating the substrate at the preheating station; The unloading lock is used to restore the air pressure in the chamber to atmospheric pressure.

Optionally, the system further includes a pallet loading station and a pallet unloading station; the pallet loading station is used to load the substrate from the substrate box to the pallet; the pallet unloading station is used to unload the substrate from the pallet to the substrate box. middle.

Optionally, the system further includes a memory configured to accommodate a substrate cassette carrying a plurality of substrates.

As shown in Figure 2A, the system can be composed of two subsystems to complete the deposition of IP/IN layers, or as shown in Figure 2B, the substrate processing system can be composed of 3 subsystems to complete I, I, N , Deposition of P layer. Specifically, in conjunction with Figure 2A and Figure 2B, the system components are described as follows: 10 represents a substrate processing system assembled from 2 or more subsystems; 11 represents subsystem 1 with I layer deposition on the back; 12 represents on the front Subsystem 2 for plating I and N layer deposition; 13 represents subsystem 3 for plating P layer deposition on the backside; 14 represents subsystem 1 for plating I and P layer deposition on the backside; 101 represents the substrate cassette storage station, represented by A box for storing loaders; 102 represents a transfer station-loading station for loading substrates onto pallets, and the pallets are recycled from the transfer station-loading station; 103 represents a pallet preparation station; 104 a load lock chamber (load lock chamber) ), used for load lock; 105 represents the preheating chamber, used to heat the substrate to 200-250 degrees Celsius; 106 represents the PECVD processing station, used for the deposition of the intrinsic layer; 107 represents PECVD processing Station for the deposition of pre-doped layers (such as N-layer). 108 represents the Unload lock chamber (Unload lock chamber), used to unload the lock; 109 represents the Unload station (Unload station); 110 represents the transfer station, used to pick up the substrate and the tray is lowered and transferred to the lower track through the system to return to the substrate loading; 111 represents the flip station, which is used to pick up the substrate from the transfer station and flip the substrate at the flip station, and place it on a pallet forwarded by the next subsystem; 112 represents the rolling station, used to move the pallet to the end of the track; 113 Indicates the first transverse rolling station; 114 indicates the second transverse rolling station, which is used to collect pallets and move them laterally, in which the transverse rolling station represented by 113 can realize turning; 115 PECVD processing station, used for post-doped layers (such as P layer); 116 represents a substrate cassette stocker for storing empty cassettes to receive substrates from the unloader; 117 represents a substrate cassette reservoir for transferring finished substrates back to the substrate cassette or another tray for the next process Steps; 118 represents the inspection aisle, used for cabin maintenance; 119 represents the vacuum pump, used to reduce the processing pressure to sub-atmospheric levels.

In this embodiment, processing the I layer first has the advantage of reducing the cooling time required to passivate the bare silicon surface after texturing; alternatively, the substrate can have double-sided deposition on the I layer, using a tray with openings on both sides of the substrate , and then deposit the N layer and P layer on the I layer on the front and back sides of the substrate respectively through two independent systems.

Optionally, the system can also incorporate a texturing station for texturing the front surface and the back surface of the substrate so that the front surface (e.g., the first surface) and the back surface (e.g., the second surface) of the substrate Texture is formed on it. The material of the pre-intrinsic layer and the post-intrinsic layer includes amorphous silicon (A-SI:H). In some cases, each of the front and back intrinsic layers may include one or more layers of amorphous silicon: the material of the front doped layer may be amorphous silicon or stacked layers of microcrystalline silicon, or both. Doped with N-type ions. The material of the post-doping layer is amorphous silicon doped with P-type ions. In some cases, the front doped intrinsic layer may be a phosphorus doped intrinsic layer and the post doped intrinsic layer may be a boron doped intrinsic layer. in this situation In this case, phosphorus can be used to form the N layer, and boron can be used to form the P layer. The material of the front conductive layer and the rear conductive layer is transparent conductive oxide. In other embodiments, other materials may be used for different layers.

In some cases, the N and P layers may be made of microcrystalline silicon. Additionally, in some embodiments, any, any multiple, or all of the I layer, N layer, and P layer may be composed of multiple deposited layers of similar materials deposited under different processing conditions to improve the conversion efficiency of the solar cell. .

The transfer device in the above system may include tracks, guides, transfer surfaces, etc. that extend along one or more transfer chambers that provide a vacuum environment to transfer the pallets to different processing stations for processing.

In some embodiments, any processing station described herein may include mechanical components, electrical components, electromechanical components, or any combination thereof configured to provide the features described herein. Furthermore, in some embodiments, any processing station described herein may optionally include control elements, feedback elements (eg, one or more sensors), or any other mechanical and/or electrical components.

Based on the substrate processing system shown in Figure 2B, an embodiment of the present invention also provides a substrate processing method, as shown in Figure 3, including the following steps:

S301, a plurality of pallets are provided, and the substrate is configured to be loaded onto the first pallet with its back side facing up.

That is, at the beginning of deposition, the substrate is loaded onto the first pallet with its back side facing up.

S302, load the first tray carrying the substrate into the loading lock and be sucked to low pressure.

S303, transport the first tray to the preheating station under vacuum, preheat the first tray carrying the substrate, and transport the preheated first tray and the substrate to the PECVD processing station.

That is, the first tray is transported into the preheating chamber under vacuum to be preheated to 200~250 degrees Celsius.

S304, when the base of the PECVD processing station is heated, the base moves upward until it contacts the back of the first tray, and pushes the edge of the front part of the first tray into contact with the radio frequency gasket, so that the first tray passes through the radio frequency gasket. A ground loop is formed with the upper chamber body, and the gas nozzle on the first electrode blows plasma toward the substrate on the first tray, forming a first I layer on the back side of the substrate.

That is, the first tray is transported into the PECVD chamber under vacuum to deposit the intrinsic layer on the backside of the substrate at 200~250 degrees Celsius.

S305, transport the first tray carrying the substrate to the unloading lock to release it to the atmospheric environment.

S306: Flip the substrate face up and load it onto the second pallet.

That is, turn the substrate over and place it face-up on the new second pallet.

S307, load the second tray carrying the substrate into the loading lock and be sucked to low pressure.

At this time, the first pallet can be reset for reuse.

S308, transport the second tray to the preheating station under vacuum, preheat the second tray carrying the substrate, transport the preheated second tray and the substrate to the PECVD processing station, and form a layer on the back of the substrate. Second floor.

That is, the second tray is transported into the preheating chamber under vacuum to preheat to 200~250 degrees Celsius. The second tray is transported under vacuum to the PECVD processing station to deposit the intrinsic layer on the front side of the substrate at 200 to 250 degrees Celsius.

S309: Form an N layer on the second I layer.

That is, the second tray is transported into the PECVD processing station under vacuum to deposit an N-type doped layer on the front side of the substrate at 200~250 degrees Celsius.

S310, transport the second pallet carrying the substrate to the unloading lock to be released into the atmospheric environment.

At this time, the second pallet can be reset for reuse.

S311, flip the substrate so that its back is facing up and load it onto the third pallet.

S312, load the third tray carrying the substrate into the loading lock and be sucked to low pressure.

S313, transport the third tray to the preheating station under vacuum, preheat the third tray carrying the substrate, transport the preheated third tray and the substrate to the PECVD processing station, and place the third tray on the back of the substrate A P-th layer is formed on the I-layer.

That is, the third tray is transported into the PECVD processing station under vacuum to deposit a P-type doped layer on the back side of the substrate at 200~250 degrees Celsius.

S314, transport the third tray carrying the substrate to the unloading lock to release it to the atmospheric environment, and unload the substrate into the substrate box.

At this point deposition is complete and the third pallet can be reset for reuse.

Based on the substrate processing system shown in Figure 2A, an embodiment of the present invention also provides a substrate processing method, as shown in Figure 4, including the following steps:

S401, a plurality of pallets are provided, and the substrate is configured to be loaded onto the first pallet with its back side facing up.

That is, at the beginning of deposition, the substrate is loaded onto the first pallet with its back side facing up.

S402, load the first tray carrying the substrate into the loading lock and be sucked to low pressure.

S403, transport the first tray to the preheating station under vacuum, preheat the first tray carrying the substrate, and transport the preheated first tray and the substrate to the PECVD processing station.

That is, the first tray is transported into the preheating chamber under vacuum to be preheated to 200~250 degrees Celsius.

S404, when the base of the PECVD processing station is heated, the base moves upward until it contacts the back of the first tray, and pushes the edge of the front part of the first tray into contact with the radio frequency gasket, so that the first tray passes through the radio frequency gasket. A ground loop is formed with the upper chamber body, and the gas nozzle on the first electrode blows plasma toward the substrate on the first tray, forming a first I layer on the back side of the substrate.

S405, transport the first tray carrying the substrate to the unloading lock to be released into the atmospheric environment.

S406: Transport the first tray to the PECVD processing station under vacuum, and form the P-th layer on the first I-layer on the back side of the substrate.

S407, transport the first tray carrying the substrate to the unloading lock to be released into the atmospheric environment.

S408: Turn the substrate face up and load it onto the second pallet.

S409, load the second tray carrying the substrate into the loading lock and be sucked to low pressure.

S410, transport the second pallet to the preheating station under vacuum, preheat the pallet, and transport the preheated second pallet to the PECVD processing station.

S411, when the base of the PECVD processing station is heated, the base moves upward until it contacts the back of the second tray, and pushes the edge of the front part of the tray into contact with the radio frequency gasket, so that the second tray contacts the upper surface through the radio frequency gasket. A ground loop is formed between the chamber bodies, and the gas nozzle on the first electrode blows plasma toward the substrate on the second tray, forming a second I layer on the front side of the substrate.

S412, transport the second tray to the PECVD processing station under vacuum, and form the Nth layer on the second I layer on the front side of the substrate.

S413, transport the second tray carrying the substrate to the unloading lock to be released into the atmospheric environment, and unload the substrate into the substrate box.

The use of the terms "first," "second," "third," and "fourth" does not imply any particular order, but is included to identify individual elements. Furthermore, the use of the terms first, second, etc. do not imply any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another element. Note that the terms first and second are used here and elsewhere for labeling purposes and are not intended to denote any particular spatial or temporal ordering. Furthermore, the marking of a first element does not imply the presence of a second element, and vice versa.

Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

10:Substrate processing system

11: Subsystem 1 for I layer deposition on backside

12: Subsystem 2 for I and N layer deposition on the front side

13: Subsystem 3 for P layer deposition on backside

101:Substrate box storage station

102:Transfer Station-Loading Station

103:Pallet preparation station

104:Load lock chamber

105: Preheating room

106:PECVD processing station

107:PECVD processing station

108: Unload Lock Room

109:Unloading station

110: Transfer station

111: Flip Station

112:Rolling station

113: First horizontal scrolling station

114: Second horizontal scroll station

115:PECVD processing station

116:Substrate box stocker

117:Substrate box storage

118:Inspection walkway

119: Vacuum pump

Claims (12)

A substrate processing system includes: a preheating station, a plasma enhanced chemical vapor deposition (PECVD) processing station, a cooling station and a conveying device; the conveying device is configured to sequentially transfer a substrate carrying The tray is transported in the preheating station, the PECVD processing station and the cooling station; the preheating station is used to preheat the substrate on the tray; the PECVD processing station includes: an upper chamber body, The first electrode of the upper chamber body, the lower chamber body, the second electrode provided on the lower chamber body, the base provided on the lower chamber body, a tray made of conductive material and the bottom end of the upper chamber body A radio frequency washer is provided; the PECVD processing station is used for PECVD deposition of a film layer on a preheated substrate. When the bottom base of the PECVD processing station is heated, the base moves upward until it contacts the tray carrying the substrate. the back side of the tray, and push the edge of the front part of the tray into contact with the radio frequency gasket of the PECVD processing station, so that a ground loop is formed between the tray through the radio frequency gasket and the upper chamber body of the PECVD processing station; the cooling station is used to The deposited substrate is cooled. The substrate processing system according to claim 1, further comprising a loading lock and an unloading lock; the loading lock is used to pump the air pressure in the chamber to the preheating station before preheating the substrate. Lower than atmospheric pressure; the unloading lock is used to restore the air pressure in the chamber to atmospheric pressure. The substrate processing system according to claim 1, further comprising a pallet loading station and a pallet unloading station; the pallet loading station is used to load the substrate from the substrate box onto the pallet; The pallet unloading station is used to unload the substrate from the pallet into the substrate box. The substrate processing system of claim 1, further comprising a memory configured to accommodate a substrate cassette carrying a plurality of substrates. The substrate processing system according to claim 1, wherein when the base is not heated, the tray is located in the cavity formed by the upper chamber body and the lower chamber body, and the tray is connected to the upper chamber body. The chamber body is separated and the size of the tray is larger than the size of the base. The substrate processing system according to claim 1, wherein the upper chamber body of the PECVD processing station is provided with a nozzle, and the nozzle is used to lift the chamber body and the tray upward when the edge of the front part of the tray is in contact with the radio frequency gasket. The non-reactive gas is purged from the outside of the contact point to form a gas barrier. The substrate processing system according to any one of claims 1 to 6, wherein when the front edge of the tray is in contact with the radio frequency gasket, a sealed cavity is formed between the first electrode, the tray, the upper chamber body, and the second electrode. body. The substrate processing system according to any one of claims 1 to 6, wherein the distance between the first electrode and the second electrode ranges from 5 mm to 30 mm. The substrate processing system according to any one of claims 1 to 6, wherein the first electrode is provided with a gas nozzle for purging plasma to the substrate on the tray. The substrate processing system according to any one of claims 1 to 6, wherein the first electrode can move up and down for adjusting the gap between the first electrode and the tray. A substrate processing method includes the following steps: providing a plurality of trays, and the substrates being configured to be loaded onto a first tray with their backs facing up; loading the first tray carrying the substrates into a load lock, and being suctioned to a low pressure ; The first tray is transported to the preheating station under vacuum, the first tray carrying the substrate is preheated, and the preheated first tray and the substrate are transported to the PECVD processing station; the base of the PECVD processing station is heated At this time, the base moves upward until it contacts the back of the first tray, and pushes the edge of the front part of the first tray into contact with the RF gasket, so that a ground loop is formed between the first tray and the upper chamber body through the RF gasket. A gas nozzle on an electrode blows plasma to the substrate on the first tray, forming a first I layer on the back of the substrate; transporting the first tray carrying the substrate to the unloading lock to release it to the atmospheric environment; Turn the substrate face up and load it onto the second pallet; load the second pallet carrying the substrate into the load lock and be sucked to low pressure; transport the second pallet to the preheating station under vacuum , preheating the second tray carrying the substrate, transporting the preheated second tray and the substrate to the PECVD processing station, forming a second I layer on the back side of the substrate; forming a second I layer on the back side of the substrate N layer; transport the second pallet carrying the substrate to the unload lock to release to the atmosphere; flip the substrate over to the back side and load it onto the third pallet; load the third pallet carrying the substrate into the load lock , and is sucked to low pressure; transport the third tray to the preheating station under vacuum, preheat the third tray carrying the substrate, transport the preheated third tray and substrate to the PECVD processing station, and The P layer is formed on the first I layer on the back of the substrate; the third tray carrying the substrate is transported to the unloading lock to be released to the atmospheric environment, and the substrate is unloaded into the substrate box. A substrate processing method includes the following steps: A plurality of trays are provided, and substrates are configured to be loaded onto a first tray with their backs facing up; loading the first tray carrying the substrates into a load lock and being suctioned to low pressure; conveying the first tray under vacuum Go to the preheating station, preheat the first tray carrying the substrate, and transport the preheated first tray and substrate to the PECVD processing station; when the base of the PECVD processing station is heated, the base moves upward until it contacts the back side of the first tray, and push the edge of the front part of the first tray into contact with the RF gasket, so that a ground loop is formed between the first tray and the upper chamber body through the RF gasket, and the gas nozzle on the first electrode is directed toward the third The substrate on one tray is purged with plasma to form a first I layer on the back side of the substrate; the first tray carrying the substrate is transported to the unloading lock to be released into the atmospheric environment; the first tray is removed under vacuum Transported to the PECVD processing station, the P layer is formed on the first I layer on the back of the substrate; transport the first tray carrying the substrate to the unloading lock to be released into the atmospheric environment; flip the substrate to Load the second pallet face up; load the second pallet carrying the substrate into the load lock and be pumped to low pressure; transport the second pallet under vacuum to the preheating station, preheat the second pallet Tray, transport the preheated second tray to the PECVD processing station; when the base of the PECVD processing station is heated, the base moves upward until it contacts the back of the second tray, and pushes the edge of the front part of the second tray In contact with the radio frequency gasket, the second tray forms a ground loop between the radio frequency gasket and the upper chamber body. The gas nozzle on the first electrode blows plasma toward the substrate on the second tray. Form a second I layer on the front side; transport the second tray to the PECVD processing station under vacuum, and form an Nth layer on the second I layer on the front side of the substrate; The second tray carrying the substrates is transported into the unload lock to be released to the atmosphere and the substrates are unloaded into the substrate box.