TWI824679B - Display device and method for fabricating the same - Google Patents

Abstract

A display device includes a circuit substrate, a first transparent layer, a plurality of light-emitting elements, a light-shielding layer and a second transparent layer. The first transparent layer is disposed on the circuit substrate and has a plurality of first openings. The plurality of light-emitting elements is disposed in the plurality of first openings respectively and electrically connected to the circuit substrate. The light-shielding layer is disposed on the first transparent layer and has a plurality of second openings, wherein the plurality of second openings is overlapped with the plurality of first openings respectively. The second transparent layer is disposed in the plurality of first openings and the plurality of second openings and on the light-shielding layer. A method for fabricating a display device is also provided.

Description

Display device and manufacturing method thereof

The present invention relates to a display device and a manufacturing method thereof.

Micro-LED display devices have the advantages of power saving, high efficiency, high brightness and fast response time. Since the size of micro-LEDs is extremely small, a protective layer is generally used to cover the micro-LEDs to protect the micro-LEDs, thereby extending the service life of the Micro-LED display device and ensuring its performance. However, experiments have confirmed that compared to Micro-LED display devices that do not use a protective layer to cover micro-light-emitting diodes, the relative intensity of forward light emission of Micro-LED display devices that use a protective layer to cover micro-light-emitting diodes will be lower. There is about 40% loss, making it difficult to improve the light extraction efficiency of Micro-LED display devices.

The present invention provides a display device with improved relative intensity of forward light emission.

The present invention also provides a manufacturing method of a display device, which can improve the relative intensity of forward light emission of the display device.

One embodiment of the present invention provides a display device, including: a circuit substrate; a first light-transmitting layer located on the circuit substrate and having a plurality of first openings; a plurality of light-emitting elements respectively disposed in the plurality of first openings, and electrically connected to the circuit substrate; the light-shielding layer is located on the first light-transmitting layer and has a plurality of second openings, wherein the plurality of second openings respectively overlap the plurality of first openings; and the second light-transmitting layer is provided on the plurality of first openings. One opening and a plurality of second openings and on the light-shielding layer.

In an embodiment of the present invention, the refractive index of the above-mentioned second light-transmitting layer is greater than the refractive index of the first light-transmitting layer.

In an embodiment of the present invention, the above-mentioned first opening has a first side wall, and an included angle θ1 is formed between the first side wall and the surface of the circuit substrate, and 0<θ1<90°.

In an embodiment of the present invention, the above-mentioned first opening has a second side wall, the first side wall is located between the second side wall and the circuit substrate, and there is an angle θ2 between the extension direction of the second side wall and the surface of the circuit substrate, and θ1<θ2≤90°.

In an embodiment of the present invention, the above-mentioned display device further includes a third light-transmitting layer located on the second light-transmitting layer, and the refractive index of the third light-transmitting layer is greater than the refractive index of the second light-transmitting layer.

In an embodiment of the present invention, the above-mentioned display device further includes a cover plate, and the third light-transmitting layer is located between the cover plate and the circuit substrate.

In an embodiment of the present invention, the above-mentioned display device further includes a light-transmitting structure located between the third light-transmitting layer and the second light-transmitting layer, and the light-transmitting structure has a plurality of third openings, wherein the plurality of third openings The openings completely overlap the plurality of second openings respectively.

In an embodiment of the present invention, there is an included angle θ3 between the side wall and the bottom surface of the above-mentioned light-transmitting structure, and 90<θ3≤160°.

In an embodiment of the present invention, the refractive index of the above-mentioned third light-transmitting layer is greater than the refractive index of the light-transmitting structure.

In an embodiment of the present invention, the ratio of the diameter of the second opening to the diameter of the third opening is between 10/7 and 5/2.

In an embodiment of the present invention, the ratio of the thickness of the above-mentioned third light-transmitting layer to the height of the light-transmitting structure is between 25/3 and 4.

Another embodiment of the present invention provides a manufacturing method of a display device, including: arranging a plurality of light-emitting elements on a circuit substrate; forming a first light-transmitting layer on the circuit substrate, and the first light-transmitting layer has a plurality of first openings , wherein the plurality of light-emitting elements respectively completely overlap the plurality of first openings; a light-shielding layer is formed on the first light-transmitting layer, and the light-shielding layer has a plurality of second openings, wherein the plurality of second openings respectively overlap the plurality of first openings; A second light-transmitting layer is formed on the light-shielding layer, and the second light-transmitting layer fills the plurality of first openings and the plurality of second openings; a third light-transmitting layer is formed on the cover plate; and a light-transmitting structure is formed on the third on the light-transmitting layer, and the light-transmitting structure has a plurality of third openings; and the circuit substrate and the cover plate are paired so that the light-transmitting structure and the plurality of light-emitting elements are located between the circuit substrate and the cover plate, and the plurality of second openings Overlap the corresponding third openings respectively.

In an embodiment of the present invention, the above-mentioned manufacturing method of a display device further includes forming an adhesive layer on the second light-transmitting layer before the assembly, and filling the plurality of third openings with the adhesive layer after the assembly.

In an embodiment of the present invention, the material of the above-mentioned adhesive layer is the same as the material of the third light-transmitting layer.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout this specification, the same reference numbers refer to the same elements. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" can mean the presence of other components between two components.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections /or parts shall not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first "element", "component", "region", "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms including "at least one" or "and/or" unless the content clearly dictates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will also be understood that when used in this specification, the terms "comprising" and/or "including" designate the presence of stated features, regions, integers, steps, operations, elements and/or parts, but do not exclude the presence of one or more The presence or addition of other features, regions, integers, steps, operations, elements, parts and/or combinations thereof.

Additionally, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation illustrated in the figures. For example, if the device in one of the figures is turned over, elements described as "below" other elements would then be oriented "above" the other elements. Thus, the exemplary term "lower" may include both "lower" and "upper" orientations, depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "lower" or "lower" may include both upper and lower orientations.

As used herein, "about," "approximately," or "substantially" includes the stated value and those within ordinary skill in the art, given the specific amount of error associated with the measurement in question (i.e., the limitations of the measurement system). An average within a range of acceptable deviations for a specific value determined by a person. For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the terms "approximately", "approximately", or "substantially" used in this article can be used to select a more acceptable deviation range or standard deviation based on optical properties, etching properties, or other properties, and one standard deviation does not apply to all. nature.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed to have meanings consistent with their meanings in the context of the relevant technology and the present invention, and are not to be construed as idealistic or excessive Formal meaning, unless expressly defined as such herein.

Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. Accordingly, variations in the shape of the illustrations, for example as a result of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, regions shown or described as flat may typically have rough and/or non-linear characteristics. Additionally, the acute angles shown may be rounded. Accordingly, the regions shown in the figures are schematic in nature and their shapes are not intended to show the precise shapes of the regions and are not intended to limit the scope of the claims.

1A to 3B are partial cross-sectional schematic diagrams of the steps of a manufacturing method of the display device 10 according to an embodiment of the present invention. Hereinafter, the manufacturing method of the display device 10 will be described with reference to FIGS. 1A to 3B .

First, please refer to FIG. 1A , a plurality of light-emitting elements 120 are disposed on the circuit substrate 110 . For example, the plurality of light-emitting elements 120 are manufactured on a growth substrate and then transferred to the circuit substrate 110 through mass transfer technology. In some embodiments, the mass transfer technology includes laser transfer technology, where the laser transfer technology realizes the separation of the light-emitting element 120 by using a laser to generate a light-matter reaction between the light-emitting element 120 and the growth substrate, and simultaneously generates The impact force or driving force can detach the light-emitting element 120 and push the light-emitting element 120 to move toward the circuit substrate 110 . In some embodiments, the plurality of light-emitting elements 120 may be arranged in an array on the circuit substrate 110, but the invention is not limited thereto.

For example, the circuit substrate 110 may include a base plate 112 and a driving circuit layer 114 . The base plate 112 may be a transparent substrate or a non-transparent substrate, and its material may be a quartz substrate, a glass substrate, a polymer substrate, or other appropriate materials, but the invention is not limited thereto. The driving circuit layer 114 may include components or circuits required by the display device 10, such as driving components, switching components, storage capacitors, power lines, driving signal lines, timing signal lines, current compensation lines, detection signal lines, etc. In some embodiments, the driving circuit layer 114 can be formed on the base plate 112 using a thin film deposition process, a photomask process, and an etching process, and the driving circuit layer 114 can include an active device array, where the active device array includes multiple arrays arranged in an array. an active component. The active component is, for example, a thin film transistor, but the present invention is not limited thereto.

Specifically, the light emitting element 120 may be formed on a growth substrate, such as a sapphire substrate. In some embodiments, the method of forming the light-emitting element 120 may include performing an epitaxial process using appropriate reactants to deposit a required film, and then patterning the film through a photolithography process and an etching process to form the light-emitting element. Various sub-layers of 120. In some embodiments, a doping process can also be selectively performed on some sub-layers of the light-emitting element 120 . In some embodiments, the light emitting element 120 may be a micro light emitting diode (Micro-LED). The light-emitting element 120 may include two electrodes (not shown), and the two electrodes may be electrically connected to two pads (not shown) provided on the driving circuit layer 114 of the circuit substrate 110 respectively. In this way, the display device 10 can control the light emission of the light-emitting element 120 through the circuit substrate 110 .

Next, please refer to FIG. 1B to FIG. 1D to form a first light-transmitting layer 130 on the circuit substrate 110 , and the first light-transmitting layer 130 has a plurality of openings O1 , in which the plurality of light-emitting elements 120 are respectively projected in the orthogonal projection of the circuit substrate 110 . The plurality of openings O1 are completely overlapped on the orthographic projection of the circuit substrate 110 .

Specifically, referring to FIG. 1B , the first light-transmitting layer 130 may be formed on the circuit substrate 110 and the light-emitting element 120 . The first light-transmitting layer 130 may be formed by a spin coating process or other similar processes, but the invention is not limited thereto. In some embodiments, the refractive index of the first light-transmitting layer 130 may be between 1.3 and 1.45. For example, the refractive index of the first light-transmitting layer 130 may be approximately 1.4.

Next, please refer to FIG. 1C , an opening PO1 can be formed in the first light-transmitting layer 130 , the opening PO1 does not expose the light-emitting element 120 , and the orthographic projection of the light-emitting element 120 on the circuit substrate 110 completely overlaps the opening PO1 on the orthographic projection of the circuit substrate 110 . projection. Next, please refer to FIG. 1D , an opening PO2 can be formed below the opening PO1 to expose the light-emitting element 120 and part of the circuit substrate 110 , and the side wall W2 of the opening PO2 is located between the side wall W1 of the opening PO1 and the circuit substrate 110 . Therefore, the opening O1 of the first light-transmitting layer 130 may include the opening PO1 and the opening PO2. In some embodiments, the opening PO1 and the opening PO2 can be formed through an etching process or an exposure and development process. In some embodiments, there may be an included angle θ1 between the side wall W2 of the opening PO2 and the surface F1 of the circuit substrate 110, and 0<θ1<90°. For example, the included angle θ1 is about 60°. In some embodiments, there may be an included angle θ2 between the extending direction of the side wall W1 of the opening PO1 and the surface F1 of the circuit substrate 110, and θ1<θ2≤90°. For example, the included angle θ2 is approximately 85° or 90°.

Next, referring to FIG. 1E , a light-shielding layer 140 is formed on the surface F2 of the first light-transmitting layer 130 . The light-shielding layer 140 may have multiple openings O2, and the multiple openings O2 overlap the multiple openings O1 respectively, so as not to affect the light emitting element 120. In some embodiments, the light-shielding layer 140 can be formed by an ink jet printing process. The light-shielding layer 140 may include dark-colored light-absorbing materials, such as black resin or metal oxide, but the invention is not limited thereto.

1F, a second light-transmitting layer 150 is formed on the light-shielding layer 140, the first light-transmitting layer 130, the light-emitting element 120 and the circuit substrate 110, and the second light-transmitting layer 150 fills the plurality of openings O1 and multiple openings O1. In the opening O2, the second light-transmitting layer 150 can cover the light-emitting element 120, thereby providing protection to the light-emitting element 120. In some embodiments, the second light-transmitting layer 150 can be formed by a spin coating process or other similar processes. The second light-transmitting layer 150 may include a transparent dielectric material, such as acrylic resin or polyurethane, and the refractive index of the second light-transmitting layer 150 may be between 1.45 and 1.6, such as the second light-transmitting layer 150 . The refractive index of layer 150 may be approximately 1.488.

Next, please refer to FIG. 1G to form an adhesive layer AH on the second light-transmitting layer 150, and the adhesive layer AH can completely cover the second light-transmitting layer 150. In some embodiments, the adhesive layer AH may be formed by a spin coating process or other similar processes. The adhesive layer AH may include an adhesive material such as acrylic resin.

Next, please refer to FIG. 2A , a cover plate CV is provided, and a third light-transmitting layer 160 is formed on the cover plate CV. The third light-transmitting layer 160 can be formed on the cover CV through a spin coating process or other similar processes, but the invention is not limited thereto. In some embodiments, the refractive index of the third light-transmitting layer 160 may be between 1.6 and 2. For example, the refractive index of the third light-transmitting layer 160 may be approximately 1.7.

Next, referring to FIGS. 2A to 2C , a light-transmitting structure TS is formed on the third light-transmitting layer 160 , and the light-transmitting structure TS has a plurality of openings O3 . Specifically, please refer to FIG. 2A . The fourth light-transmitting layer 170 may be formed on the third light-transmitting layer 160 by, for example, a spin coating process. Next, please refer to FIG. 2B. The mask MK and the light beam LB can be used to pattern the fourth light-transmitting layer 170, that is, the fourth light-transmitting layer 170 can be transformed into a light-transmitting layer having a plurality of openings O3 as shown in FIG. 2C. StructureTS. For example, the mask MK may have an opening OP1, and the portion of the fourth light-transmitting layer 170 corresponding to the opening OP1 may be hardened after being exposed to the light beam LB (eg, ultraviolet light). Then, the hardened portion of the fourth light-transmitting layer 170 can be removed through a development process, thereby forming the opening O3 in the fourth light-transmitting layer 170 . In some embodiments, the refractive index of the light-transmitting structure TS may be between 1.35 and 1.45. For example, the refractive index of the light-transmitting structure TS may be approximately 1.4.

Next, please refer to FIGS. 3A to 3B to pair the structure carried by the circuit substrate 110 shown in FIG. 1G with the structure carried by the cover CV shown in FIG. 2C , so that the light-emitting element 120 , the first light-transmitting layer 130 , and the light-shielding layer are The layer 140, the second light-transmitting layer 150, the third light-transmitting layer 160 and the light-transmitting structure TS are located between the circuit substrate 110 and the cover plate CV, and the plurality of openings O2 respectively overlap the corresponding openings O3. In some embodiments, after the assembly, the adhesive layer AH can be filled into the plurality of openings O3, so that there is a very small amount of adhesive layer AH between the light-transmitting structure TS and the second light-transmitting layer 150. Therefore, the light-transmitting structure The TS may be very close to the second light-transmitting layer 150 . In some embodiments, the light-transmitting structure TS may contact the second light-transmitting layer 150 such that the light-transmitting structure TS is located between the second light-transmitting layer 150 and the third light-transmitting layer 160 . In some embodiments, the material of the adhesive layer AH may be the same as the material of the third light-transmitting layer 160 , so that the adhesive layer AH becomes a part of the third light-transmitting layer 160 . In other words, the third light-transmitting layer 160 may include an adhesive layer AH.

FIG. 4 is a partial top view of the display device 10 according to an embodiment of the present invention. Figure 3B may be a schematic cross-sectional view taken along section line A-A' of Figure 4A. Please refer to FIG. 4 and FIG. 3B simultaneously. The display device 10 includes a circuit substrate 110 , a plurality of light-emitting elements 120 , a first light-transmitting layer 130 , a light-shielding layer 140 and a second light-transmitting layer 150 . The first light-transmitting layer 130 is located on the circuit substrate 110, and the first light-transmitting layer 130 has a plurality of openings O1. The plurality of light-emitting elements 120 are respectively disposed in the plurality of openings O1, and the plurality of light-emitting elements 120 are respectively electrically connected to the circuit substrate 110. For example, two electrodes (not shown) of each light-emitting element 120 can be electrically connected to two pads (not shown) provided on the circuit substrate 110 respectively.

The light-shielding layer 140 is disposed on the first light-transmitting layer 130, and the light-shielding layer 140 may have a plurality of openings O2, wherein the plurality of openings O2 may respectively overlap the plurality of openings O1. In some embodiments, opening O2 completely overlaps opening O1, and the size of opening O2 is approximately or equal to the size of opening O1. In some embodiments, the size of opening O2 is smaller than the size of opening O1. In some embodiments, the size of opening O2 is larger than the size of opening O1.

The second light-transmitting layer 150 is provided on the light-shielding layer 140, and the second light-transmitting layer 150 is provided in the opening O1 and the opening O2. In this way, the second light-transmitting layer 150 can cover the light-emitting element 120 to protect the light-emitting element 120 from environmental damage. In some embodiments, the refractive index of the second light-transmitting layer 150 is greater than the refractive index of the first light-transmitting layer 130 , thereby increasing the forward light extraction ratio of the light-emitting element 120 .

The display device 10 may further include a third light-transmitting layer 160, the third light-transmitting layer 160 may be located on the second light-transmitting layer 150, and the refractive index of the third light-transmitting layer 160 is greater than the refractive index of the second light-transmitting layer 150, Thereby, the forward light emission ratio of the light-emitting element 120 is improved.

The display device 10 may further include a light-transmitting structure TS. The light-transmitting structure TS may be disposed between the third light-transmitting layer 160 and the second light-transmitting layer 150 , and the light-transmitting structure TS has a plurality of openings O3, wherein the plurality of openings O3 The orthographic projection of the circuit substrate 110 completely overlaps the plurality of openings O2 with the orthographic projection of the circuit substrate 110 . In other words, the diameter D3 of the opening O3 is not larger than the diameter D2 of the opening O2. In addition, the side wall SW of the light-transmitting structure TS and the bottom surface BS may have an included angle θ3, and 90<θ3≤160°. For example, the included angle θ3 may be 95°, 120° or 150°. In some embodiments, the included angle θ3 may be between 110° and 120°, for example, the included angle θ3 may be 115°. In this way, the opening O3 may have a diameter that tapers in a direction away from the light-emitting element 120, thereby enhancing the guiding effect of the light-transmitting structure TS on the forward light emission.

In some embodiments, the refractive index of the third light-transmitting layer 160 is greater than the refractive index of the light-transmitting structure TS, thereby increasing the forward light emission ratio of the light-emitting element 120 . In addition, the relationship between the refractive index of the light-transmitting structure TS and the refractive index of the second light-transmitting layer 150 is not particularly limited, and the refractive index of the light-transmitting structure TS can be greater than, equal to, or less than the refractive index of the second light-transmitting layer 150 .

The display device 10 may further include a cover CV, which may be located on the third light-transmitting layer 160, such that the third light-transmitting layer 160 is located between the cover CV and the light-transmitting structure TS, and the light-emitting element 120, the first transparent layer 160, and the light-transmitting structure TS. The light layer 130 , the light-shielding layer 140 and the second light-transmitting layer 150 may be located between the light-transmitting structure TS and the third light-transmitting layer 160 and the circuit substrate 110 .

Referring to FIG. 4 , in this embodiment, the display device 10 may include multiple pixels PX, and the multiple pixels PX may be arranged in an array, but the invention is not limited thereto. In some embodiments, each pixel PX may also include three sub-pixels PX1, PX2, and PX3, and the three sub-pixels PX1, PX2, and PX3 may be arranged along the first direction C1. In some embodiments, the three sub-pixels PX1, PX2, and PX3 may be arranged along the second direction C2. For example, the sub-pixels PX1, PX2, and PX3 can respectively present different colors. For example, the light-emitting element 120 in the sub-pixel PX1 is a red light-emitting diode, and the light-emitting element 120 in the sub-pixel PX2 is a green light-emitting diode. body, the light-emitting element 120 in the sub-pixel PX3 is a blue light-emitting diode, but the invention is not limited to this. In some embodiments, each sub-pixel PX1, PX2, PX3 may have two openings O3 of the light-transmitting structure TS, where the first opening O3 corresponds to the massively transferred light-emitting element 120, and the second opening O3 O3 corresponds to the re-installed light emitting element 120 . For example, when a large amount of the light-emitting elements 120 that are transferred to the position corresponding to the first opening O3 on the circuit substrate 110 cannot operate normally, the light-emitting elements 120 can be re-installed in the position corresponding to the second opening O3 on the circuit substrate 110 .

FIG. 5 is a simulation diagram of the relative intensity of light emitted by the display device 10 according to an embodiment of the present invention. As can be seen from Figure 5, compared with the display device (#1) that is only provided with light-emitting elements and no protective layer, the relative intensity of the light emitted by the conventional display device (#3) with a protective layer is lost by 40%. However, compared with the display device (#1), the display device 10 (#2) according to an embodiment of the present invention further improves the relative intensity of light emission by 10%, confirming that the display device 10 according to the present invention indeed has improved The relative intensity of forward light emission.

Table 1 below shows simulation data of the ratio of the diameter D2 of the opening O2 to the diameter D3 of the opening O3 and the relative intensity of the light emitted by the display device 10 . It can be seen from Table 1 below that when D2/D3 is between 10/7 and 10/4 (ie, 10/7 and 5/2), the relative intensity of the light emitted by the display device 10 is significantly improved. D2/D3 Relative intensity of light output 10:8.5 0.085 10:7.6 0.94 10:6.7 1.04 10:5.6 1.07 10:4.7 1.09 10:3.6 0.91 10:2.4 0.94 10:0.97 0.899 [Table I]

Table 2 below shows simulation data of the ratio of the thickness H1 of the third light-transmitting layer 160 to the height H2 of the light-transmitting structure TS and the relative intensity of the light emitted by the display device 10 . As can be seen from Table 2 below, when H1/H2 is between 10/1.2 and 10/2.5 (ie, 25/3 to 4), the relative intensity of the light emitted by the display device 10 is significantly improved. H1/H2 Relative intensity of light output 10:0.9 0.855559 10:1.1 0.93337 10:1.3 1.031462 10:1.5 1.104831 10:1.7 1.105934 10:1.9 1.06614 10:2.1 1.055663 10:2.3 1.048219 10:2.5 1.100328 [Table II]

Below, other embodiments of the present invention will be continued to be described using FIGS. 6A to 6C , and the component numbers and related content of the embodiment of FIGS. 1A to 3B will be used, where the same numbers are used to represent the same or similar elements, and Explanations of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the embodiments of FIGS. 1A to 3B , which will not be repeated in the following description.

6A to 6C are partial cross-sectional schematic diagrams of the steps of a manufacturing method of the display device 20 according to an embodiment of the present invention. Compared with the step flow of the manufacturing method of the display device 10 shown in FIGS. 1A to 3B , the step flow of the manufacturing method of the display device 20 shown in FIGS. 6A to 6C is mainly different in: The manufacturing method uses the step flow shown in FIG. 6A to replace the step flow of FIGS. 1C to 1D, and uses the step flow shown in FIG. 6B to replace the step flow of FIG. 2B, to obtain the display device 20 shown in FIG. 6C.

Specifically, please refer to FIG. 6A , an opening O4 can be formed in the first light-transmitting layer 130 , the opening O4 exposes the light-emitting element 120 and part of the circuit substrate 110 , and the orthographic projection of the light-emitting element 120 on the circuit substrate 110 completely overlaps the opening O4 Orthographic projection on the circuit substrate 110 . In this embodiment, the sidewall W4 of the opening O4 of the first light-transmitting layer 130 may have only one slope. In addition, there may be an included angle θ4 between the side wall W4 of the opening O4 and the surface F1 of the circuit substrate 110, and 0<θ4<90°. For example, the included angle θ4 may be about 40°, 60° or 80°.

In addition, please refer to FIG. 6B . In this embodiment, the mold MD can be used to thermally cure the fourth light-transmitting layer 170 to form the light-transmitting structure TS. For example, the mold MD may have an outer shape complementary to the light-transmitting structure TS. After the fourth light-transmitting layer 170 is formed on the third light-transmitting layer 160 , the mold MD can be placed in the fourth light-transmitting layer 170 , and the mold MD can be contacted with the third light-transmitting layer 160 . Next, the fourth light-transmitting layer 170 may be heated to solidify the fourth light-transmitting layer 170 to form the light-transmitting structure TS.

Referring to FIG. 6C , the display device 20 includes: a circuit substrate 110 , a plurality of light-emitting elements 120 , a first light-transmitting layer 130 , a light-shielding layer 140 , a second light-transmitting layer 150 , a light-transmitting structure TS, a third light-transmitting layer 160 and Cover CV. The plurality of light-emitting elements 120 are respectively disposed in the plurality of openings O1 of the first light-transmitting layer 130 , and the orthographic projection of the light-emitting elements 120 on the circuit substrate 110 completely overlaps the orthographic projection of the opening O3 of the light-transmitting structure TS on the circuit substrate 110 .

Compared with the display device 10 shown in FIG. 3B , the main difference of the display device 20 shown in FIG. 6C is that the side wall W4 of the opening O4 in the first light-transmitting layer 130 of the display device 20 may have only one slope. degree, that is, the included angle θ2 shown in Figure 1D can be equal to the included angle θ1. In this embodiment, through the structural design of the first light-transmitting layer 130 , the light-shielding layer 140 and the second light-transmitting layer 150 , the relative intensity of forward light emission of the display device 20 can be improved. In addition, by making the refractive index of the second light-transmitting layer 150 greater than the refractive index of the first light-transmitting layer 130 , the relative intensity of forward light emission of the display device 20 can also be improved. In addition, through the structural design of the light-transmitting structure TS and the third light-transmitting layer 160 and the design of the angle θ3 of the light-transmitting structure TS, the improvement effect of the relative intensity of forward light emission of the display device 20 can be further enhanced.

To sum up, the display device of the present invention can improve the relative intensity of forward light emission of the display device through the structural design of the first light-transmitting layer, the light-shielding layer and the second light-transmitting layer. Furthermore, the display device of the present invention can also increase the relative intensity of forward light emission of the display device by making the refractive index of the second light-transmitting layer greater than the refractive index of the first light-transmitting layer. In addition, the display device of the present invention can further enhance the improvement effect of the relative intensity of forward light emission of the display device through the structural design of the light-transmitting structure and the third light-transmitting layer and the angle design of the light-transmitting structure.

Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.

10, 20:Display device 110:Circuit substrate 112: Bottom plate 114: Driver circuit layer 120:Light-emitting component 130: First light-transmitting layer 140:Light shielding layer 150: Second light-transmitting layer 160: The third light-transmitting layer 170: The fourth light-transmitting layer A-A’: hatch line AH: adhesive layer BS: Bottom C1: first direction C2: Second direction CV: cover D2, D3: caliber F1, F2: Surface H1:Thickness H2: height LB: beam MD: Mold MK: mask O1, O2, O3, O4, OP1, PO1, PO2: opening PX: pixel PX1, PX2, PX3: sub-pixels SW: side wall TS: Translucent structure W1, W2, W4: side walls θ1, θ2, θ3, θ4: included angle

1A to 3B are partial cross-sectional schematic diagrams of the steps of a manufacturing method of the display device 10 according to an embodiment of the present invention. FIG. 4 is a partial top view of the display device 10 according to an embodiment of the present invention. FIG. 5 is a simulation diagram of the relative intensity of light emitted by the display device 10 according to an embodiment of the present invention. 6A to 6C are partial cross-sectional schematic diagrams of the steps of a manufacturing method of the display device 20 according to an embodiment of the present invention.

10:Display device

110:Circuit substrate

112: Bottom plate

114: Driver circuit layer

120:Light-emitting component

130: First light-transmitting layer

140:Light shielding layer

150: Second light-transmitting layer

160: The third light-transmitting layer

AH: adhesive layer

BS: Bottom

CV: cover

D2, D3: caliber

F1, F2: surface

H1:Thickness

H2: height

O1,O2,O3: opening

SW: side wall

TS: Translucent structure

θ3: included angle

Claims (13)

A display device includes: a circuit substrate; a first light-transmitting layer located on the circuit substrate and having a plurality of first openings; a plurality of light-emitting elements respectively disposed in the plurality of first openings and electrically connected the circuit substrate; a light-shielding layer located on the first light-transmitting layer and having a plurality of second openings, wherein the plurality of second openings respectively overlap the plurality of first openings; and a second light-transmitting layer, Disposed in the plurality of first openings and the plurality of second openings and on the light-shielding layer, wherein the refractive index of the second light-transmitting layer is greater than the refractive index of the first light-transmitting layer. The display device according to claim 1, wherein the first opening has a first side wall, and there is an included angle θ1 between the first side wall and the surface of the circuit substrate, and 0<θ1<90°. The display device according to claim 2, wherein the first opening has a second side wall, the first side wall is located between the second side wall and the circuit substrate, and the extension direction of the second side wall is consistent with the second side wall. There is an angle θ2 between the surfaces of the circuit substrate, and θ1<θ2

90°. The display device according to claim 1, further comprising a third light-transmitting layer located on the second light-transmitting layer, and the refractive index of the third light-transmitting layer is greater than the refractive index of the second light-transmitting layer. . The display device according to claim 4, further comprising a cover plate, and the third light-transmitting layer is located between the cover plate and the circuit substrate. The display device according to claim 4, further comprising a light-transmitting structure located between the third light-transmitting layer and the second light-transmitting layer, and the light-transmitting structure has a plurality of third openings, wherein the Each of the plurality of third openings completely overlaps the plurality of second openings. The display device according to claim 6, wherein there is an included angle θ3 between the side wall and the bottom surface of the light-transmitting structure, and 90<θ3

160°. The display device according to claim 6, wherein the refractive index of the third light-transmitting layer is greater than the refractive index of the light-transmitting structure. The display device according to claim 6, wherein the ratio of the diameter of the second opening to the diameter of the third opening is between 10/7 and 5/2. The display device of claim 6, wherein a ratio of the thickness of the third light-transmitting layer to the height of the light-transmitting structure is between 25/3 and 4. A method of manufacturing a display device, including: arranging a plurality of light-emitting elements on a circuit substrate; forming a first light-transmitting layer on the circuit substrate, and the first light-transmitting layer has a plurality of first openings, wherein the A plurality of light-emitting elements respectively completely overlap the plurality of first openings; a light-shielding layer is formed on the first light-transmitting layer, and the light-shielding layer has a plurality of second openings, wherein the plurality of second openings respectively overlap The plurality of first openings; a second light-transmitting layer is formed on the light-shielding layer, and the second light-transmitting layer is filled in the In the plurality of first openings and the plurality of second openings; a third light-transmitting layer is formed on the cover plate; a light-transmitting structure is formed on the third light-transmitting layer, and the light-transmitting structure has a plurality of a third opening; and pairing the circuit substrate and the cover plate so that the light-transmitting structure and the plurality of light-emitting elements are located between the circuit substrate and the cover plate, and the plurality of third openings are The two openings respectively overlap the corresponding third openings, wherein the refractive index of the second light-transmitting layer is greater than the refractive index of the first light-transmitting layer. The manufacturing method of a display device according to claim 11, further comprising forming an adhesive layer on the second light-transmitting layer before assembling the circuit substrate and the cover plate, and before assembling the circuit substrate and the cover plate. After the cover plates are assembled, the adhesive layer is filled into the plurality of third openings. The manufacturing method of a display device according to claim 12, wherein the material of the adhesive layer is the same as the material of the third light-transmitting layer.

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