[go: up one dir, main page]

TWI822480B - Pixel structure and manufacturing method thereof - Google Patents

Pixel structure and manufacturing method thereof Download PDF

Info

Publication number
TWI822480B
TWI822480B TW111144755A TW111144755A TWI822480B TW I822480 B TWI822480 B TW I822480B TW 111144755 A TW111144755 A TW 111144755A TW 111144755 A TW111144755 A TW 111144755A TW I822480 B TWI822480 B TW I822480B
Authority
TW
Taiwan
Prior art keywords
light
emitting element
reflective element
substrate
pixel structure
Prior art date
Application number
TW111144755A
Other languages
Chinese (zh)
Other versions
TW202423267A (en
Inventor
賴玫儀
Original Assignee
友達光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 友達光電股份有限公司 filed Critical 友達光電股份有限公司
Priority to TW111144755A priority Critical patent/TWI822480B/en
Priority to CN202310379458.1A priority patent/CN116390555A/en
Application granted granted Critical
Publication of TWI822480B publication Critical patent/TWI822480B/en
Publication of TW202423267A publication Critical patent/TW202423267A/en

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/88Dummy elements, i.e. elements having non-functional features

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Polarising Elements (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)

Abstract

A pixel structure and manufacturing method thereof are provided. The pixel structure includes a substrate, a light emitting element, a reflective element, a filling structure and a bank. The light emitting element is disposed over the substrate. The reflective element is disposed over the substrate. A material of the reflective element includes cholesteric liquid crystal. The filling structure is disposed between the substrate and the reflective element. The bank is disposed between the light emitting element and the reflective element to separate the light emitting element and the reflective element.

Description

畫素結構及其製造方法Pixel structure and manufacturing method

本發明是有關於一種顯示面板,且特別是有關於一種畫素結構及其製造方法。The present invention relates to a display panel, and in particular, to a pixel structure and a manufacturing method thereof.

隨著科技的進步,顯示面板常見於手機、電視螢幕、車用面板等應用。為了提升顯示面板的質感,顯示面板中除了包括顯示器以作為一般顯示作用之外,還可包含裝飾膜設置於顯示器上,以提供裝飾的用途。然而,裝飾膜可能會影響顯示器的影像顯示,使影像清晰度降低,而降低顯示面板的整體體驗。因此,如何使顯示面板兼具清晰的影像顯示及美觀的裝飾是目前需解決的問題。With the advancement of technology, display panels are commonly used in mobile phones, TV screens, automotive panels and other applications. In order to improve the quality of the display panel, in addition to including a display for general display function, the display panel may also include a decorative film disposed on the display to provide decoration. However, the decorative film may affect the image display of the monitor, reducing image clarity and reducing the overall experience of the display panel. Therefore, how to make the display panel have both clear image display and beautiful decoration is a problem that needs to be solved at present.

本發明提供一種畫素結構及其製造方法,其結合影像顯示及裝飾功能,進而提升使用者的整體體驗。The present invention provides a pixel structure and a manufacturing method thereof, which combine image display and decoration functions to enhance the overall user experience.

本發明的畫素結構包括基板、發光元件、反射元件、填充結構以及擋牆。發光元件設置於基板之上。反射元件設置於基板之上,其中反射元件的材料包括膽固醇液晶。填充結構設置於基板與反射元件之間。擋牆設置於發光元件與反射元件之間,以將發光元件與反射元件隔開。The pixel structure of the present invention includes a substrate, a light-emitting element, a reflective element, a filling structure and a retaining wall. The light-emitting element is arranged on the substrate. The reflective element is disposed on the substrate, wherein the material of the reflective element includes cholesteric liquid crystal. The filling structure is disposed between the substrate and the reflective element. The retaining wall is disposed between the light-emitting element and the reflective element to separate the light-emitting element and the reflective element.

本發明的畫素結構的製造方法包括以下步驟。形成擋牆於基板之上,其中擋牆具有多個開口。形成發光元件於多個開口的一部分中。形成填充結構於多個開口的另一部分中。形成反射元件於填充結構上且位於多個開口的另一部分中,其中反射元件的材料包括膽固醇液晶。The manufacturing method of the pixel structure of the present invention includes the following steps. A retaining wall is formed on the base plate, wherein the retaining wall has a plurality of openings. A light-emitting element is formed in a portion of the plurality of openings. A filling structure is formed in another portion of the plurality of openings. A reflective element is formed on the filling structure and located in another part of the plurality of openings, wherein the material of the reflective element includes cholesteric liquid crystal.

基於上述,本發明的畫素結構包括發光元件及反射元件,如此一來,由本發明的畫素結構所構成的顯示層不需貼附裝飾膜於其上,而可在發光元件於非顯示模式時,呈現反射元件的靜態畫面,達到裝飾、美觀的效果,並且發光元件在顯示模式下時不會有因受到貼膜影響而使影像的清晰度下降的問題。Based on the above, the pixel structure of the present invention includes a light-emitting element and a reflective element. In this way, the display layer composed of the pixel structure of the present invention does not need to be attached with a decorative film, and can be used when the light-emitting element is in the non-display mode. When the light-emitting element is in the display mode, the static picture of the reflective element is presented to achieve a decorative and beautiful effect, and the clarity of the image will not be reduced due to the influence of the film on the light-emitting element.

在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電性連接。再者,「電性連接」或「耦合」係可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout this specification, the same reference numbers refer to the same elements. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" may mean the presence of other components between the two components.

應當理解,儘管術語「第一」、「第二」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的「第一元件」、「部件」、「區域」、「層」或「部分」可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited thereto. limitations of these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a "first element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

圖1是依照本發明的一實施例的一種畫素結構的剖視示意圖。圖2A是圖1的區域R的一實施例的局部放大剖視示意圖。圖2B是圖1的區域R的另一實施例的局部放大剖視示意圖。為了清楚示意,圖2A及圖2B省略繪示反射元件140。FIG. 1 is a schematic cross-sectional view of a pixel structure according to an embodiment of the present invention. FIG. 2A is a partially enlarged cross-sectional schematic diagram of an embodiment of the region R in FIG. 1 . FIG. 2B is a partially enlarged cross-sectional schematic view of another embodiment of the region R in FIG. 1 . For clarity of illustration, the reflective element 140 is omitted from FIG. 2A and FIG. 2B .

請參照圖1,畫素結構10包括第一基板100、擋牆120、發光元件130、反射元件140以及填充結構150。發光元件130設置於第一基板100之上。反射元件140設置於第一基板100之上。反射元件140的材料包括膽固醇液晶。填充結構150設置於第一基板100與反射元件140之間。擋牆120設置於發光元件130與反射元件140之間,以將發光元件130與反射元件140隔開。Please refer to FIG. 1 , the pixel structure 10 includes a first substrate 100, a blocking wall 120, a light emitting element 130, a reflective element 140 and a filling structure 150. The light-emitting element 130 is disposed on the first substrate 100 . The reflective element 140 is disposed on the first substrate 100 . The material of the reflective element 140 includes cholesteric liquid crystal. The filling structure 150 is disposed between the first substrate 100 and the reflective element 140 . The retaining wall 120 is disposed between the light-emitting element 130 and the reflective element 140 to separate the light-emitting element 130 and the reflective element 140 .

第一基板100的材料可為玻璃、石英、有機聚合物或是其他可適用的材料,本發明不以此為限。在一些實施例中,基板100為軟性基板,且基板100的材料例如為聚乙烯對苯二甲酸酯(polyethylene terephthalate, PET)、聚二甲酸乙二醇酯(polyethylene naphthalate, PEN)、聚酯(polyester, PES)、聚甲基丙烯酸甲酯(polymethylmethacrylate, PMMA)、聚碳酸酯(polycarbonate, PC)、聚醯亞胺(polyimide, PI)或其他可撓性材質。第一基板100可包括驅動電路(未繪示),以驅動發光元件130或反射元件140。在一些實施例中,畫素結構10還包括第一電極110,其設置於第一基板100上。發光元件130或反射元件140可透過第一電極110與對應的驅動電路電性連接。圖1中雖繪示一整層的第一電極110,但並非用以限定本發明,第一電極可依據實際需求具有圖案化的設計。The material of the first substrate 100 may be glass, quartz, organic polymer or other applicable materials, and the present invention is not limited thereto. In some embodiments, the substrate 100 is a flexible substrate, and the material of the substrate 100 is, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyester (polyester, PES), polymethylmethacrylate (PMMA), polycarbonate (PC), polyimide (PI) or other flexible materials. The first substrate 100 may include a driving circuit (not shown) to drive the light emitting element 130 or the reflective element 140 . In some embodiments, the pixel structure 10 further includes a first electrode 110 disposed on the first substrate 100 . The light-emitting element 130 or the reflective element 140 can be electrically connected to the corresponding driving circuit through the first electrode 110 . Although a whole layer of first electrode 110 is shown in FIG. 1 , this is not intended to limit the present invention. The first electrode can have a patterned design according to actual requirements.

擋牆120設置於第一基板100與第一電極110上。擋牆120可具有多個開口OP以形成網狀結構,但本發明不以此為限。擋牆的材料為有機材料,例如光阻材料、可固化樹脂材料或其他合適材料,本發明不以此為限。在其他實施例中,擋牆的材料可為無機材料,例如為氧化矽(SiO x)、氮化矽(SiN x)、其他氧化物、其他氮化物或其他合適材料,本發明不以此為限。 The retaining wall 120 is provided on the first substrate 100 and the first electrode 110 . The retaining wall 120 may have multiple openings OP to form a network structure, but the present invention is not limited thereto. The retaining wall is made of organic materials, such as photoresist materials, curable resin materials or other suitable materials, and the present invention is not limited thereto. In other embodiments, the retaining wall may be made of inorganic materials, such as silicon oxide (SiO x ), silicon nitride (SiN x ), other oxides, other nitrides or other suitable materials. limit.

發光元件130與反射元件140設置於多個開口OP中。在本實施例中,發光元件130包括第一發光元件130a、第二發光元件130b及第三發光元件130c,但本發明不以此為限,發光元件130的數量可依實際需求調整。第一發光元件130a、第二發光元件130b及第三發光元件130c可透過擋牆120彼此隔開,並且發出不同顏色的光,舉例來說,第一發光元件130a可發出紅光,第二發光元件130b可發出綠光,第三發光元件130c可發出藍光,但本發明不以此為限。The light-emitting element 130 and the reflective element 140 are disposed in the plurality of openings OP. In this embodiment, the light-emitting element 130 includes a first light-emitting element 130a, a second light-emitting element 130b, and a third light-emitting element 130c. However, the invention is not limited thereto, and the number of the light-emitting element 130 can be adjusted according to actual needs. The first light-emitting element 130a, the second light-emitting element 130b and the third light-emitting element 130c can be separated from each other through the blocking wall 120 and emit light of different colors. For example, the first light-emitting element 130a can emit red light, and the second light-emitting element 130c can emit red light. The element 130b can emit green light, and the third light-emitting element 130c can emit blue light, but the invention is not limited thereto.

在本實施例中,發光元件130為有機發光二極體(OLED),其包括有機發光疊層,例如電洞注入層132、電洞傳輸層134、發光層136及電子傳輸層138等依序設置於開口OP中。然而,本發明並不加以限定有機發光疊層的層數及類型,其可依實際需求調整。In this embodiment, the light-emitting element 130 is an organic light-emitting diode (OLED), which includes an organic light-emitting stack, such as a hole injection layer 132, a hole transport layer 134, a light-emitting layer 136, and an electron transport layer 138 in sequence. Set in the opening OP. However, the present invention does not limit the number and type of organic light-emitting stack layers, which can be adjusted according to actual needs.

反射元件140中的膽固醇液晶具有平面狀態(planar state)、焦點圓錐狀態(focal conic state)或垂直狀態(homeotropic state),其可透過電場的改變來改變其狀態。舉例來說,膽固醇液晶處於平面狀態時,其可使入射光反射,則反射元件140呈反射態,若對平面狀態的膽固醇液晶施加低電場,可使其改變至焦點圓錐狀態,而使入射光散透,則反射元件140呈霧態;若對平面狀態的膽固醇液晶施加高電場,可使膽固醇液晶分子全部垂直排列而轉換成垂直狀態,而使入射光穿透,則反射元件140呈穿透態。也就是說,反射元件140在平面狀態時,可反射出反射元件140的顏色,反射元件140在焦點圓錐狀態或垂直狀態時,降低反射而隱藏反射元件140的顏色。The cholesteric liquid crystal in the reflective element 140 has a planar state, a focal conic state, or a homeotropic state, and its state can be changed by changes in the electric field. For example, when the cholesteric liquid crystal is in a planar state, it can reflect the incident light, and the reflective element 140 is in a reflective state. If a low electric field is applied to the cholesteric liquid crystal in the planar state, it can change to a focal conic state, so that the incident light can be reflected. If the cholesteric liquid crystal is diffused, the reflective element 140 will be in a foggy state; if a high electric field is applied to the cholesterol liquid crystal in the planar state, all the cholesterol liquid crystal molecules can be arranged vertically and converted into a vertical state, so that the incident light can penetrate, and the reflective element 140 will be in a penetrating state. state. That is to say, when the reflective element 140 is in a planar state, it can reflect the color of the reflective element 140 . When the reflective element 140 is in a focal cone state or a vertical state, the reflection is reduced and the color of the reflective element 140 is hidden.

在一些實施例中,可透過調整反射元件140的膽固醇液晶的螺距來調整其可反射的波長區間,即調整反射元件140反射出的顏色。In some embodiments, the wavelength range that the reflective element 140 can reflect can be adjusted by adjusting the pitch of the cholesteric liquid crystal, that is, the color reflected by the reflective element 140 can be adjusted.

在本實施例中,可透過對應的驅動電路,使發光元件130在顯示模式下時,反射元件140處在焦點圓錐狀態或垂直狀態,而發光元件130在非顯示模式下時,反射元件140處在平面狀態。如此一來,發光元件130在顯示模式時不會受到反射元件140的影響而使影像的清晰度下降,而發光元件130在非顯示模式時,可呈現反射元件140的靜態畫面,達到裝飾、美觀的效果。In this embodiment, the corresponding driving circuit can be used to make the reflective element 140 in the focal conic state or the vertical state when the light-emitting element 130 is in the display mode, and when the light-emitting element 130 is in the non-display mode, the reflective element 140 is in the non-display mode. in a flat state. In this way, when the light-emitting element 130 is in the display mode, it will not be affected by the reflective element 140 and the clarity of the image will be reduced. When the light-emitting element 130 is in the non-display mode, it can present a static image of the reflective element 140 to achieve decoration and beauty. Effect.

填充結構150設置於開口OP中且位於第一基板100與反射元件140之間。填充結構150用以調整反射元件140的厚度,進而可調整反射元件140的明暗。舉例來說,反射元件140的厚度越高,相對地填充結構150的厚度低,反射強度越強,則反射元件140越亮;反之,反射元件140的厚度越低,相對地填充結構150的厚度高,反射強度越弱,則反射元件140越暗。在一些實施例中,填充結構150的厚度與反射元件140的厚度的總和基本上等於開口OP的深度。填充結構150的厚度可依據實際需求調整,舉例來說,不同畫素結構可具有高低不同的填充結構,甚至部分畫素結構可以沒有填充結構。The filling structure 150 is disposed in the opening OP and is located between the first substrate 100 and the reflective element 140 . The filling structure 150 is used to adjust the thickness of the reflective element 140 and thereby adjust the brightness of the reflective element 140 . For example, the higher the thickness of the reflective element 140, the smaller the thickness of the filling structure 150, the stronger the reflection intensity, and the brighter the reflective element 140; conversely, the lower the thickness of the reflective element 140, the smaller the thickness of the filling structure 150. High, the weaker the reflection intensity, the darker the reflective element 140. In some embodiments, the sum of the thickness of the filling structure 150 and the thickness of the reflective element 140 is substantially equal to the depth of the opening OP. The thickness of the filling structure 150 can be adjusted according to actual needs. For example, different pixel structures can have filling structures of different heights, and some pixel structures may even have no filling structure.

填充結構150的材料可以為透明絕緣材料(例如環氧樹脂或其他合適絕緣材料)或透明導電材料(例如聚(3,4-乙烯基二氧噻吩):聚苯乙烯磺酸(PEDOT:PSS)、銅酞菁(copper(II) phthalocyanine,CuPc)、鉑酞菁(phthalocyanine platinum,PtPc)或N,N'-雙[4-(二苯基氨基)苯基]-N,N'-二(1-萘基)聯苯胺(N,N'-Bis[4-(diphenylamino)phenyl]-N,N'-di(1-naphthyl)benzidine,NPB-DPA)、其他電洞注入材料或其他合適導電材料),本發明不以此為限。The material of the filling structure 150 may be a transparent insulating material (such as epoxy resin or other suitable insulating material) or a transparent conductive material (such as poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) , copper(II) phthalocyanine, CuPc), platinum phthalocyanine (phthalocyanine platinum, PtPc) or N,N'-bis[4-(diphenylamino)phenyl]-N,N'-bis( 1-naphthyl)benzidine (N,N'-Bis[4-(diphenylamino)phenyl]-N,N'-di(1-naphthyl)benzidine, NPB-DPA), other hole injection materials or other suitable conductive materials material), the present invention is not limited thereto.

請參照圖2A及圖2B,填充結構150的表面S為粗糙表面。在一些實施例中,如圖2A所示,填充結構150的表面S可以為凸面,即填充結構150靠近中間的厚度大於填充結構150靠近兩側擋牆120的厚度。在其他實施例中,如圖2B所示,填充結構150的表面S可以為凹面,即填充結構150靠近中間的厚度小於填充結構150靠近兩側擋牆120的厚度。在一些實施例中,填充結構150的表面S的最高點與最低點的高度差H可以在15 nm至120 nm之間。如此一來,可以使經反射元件140反射所呈現的畫面較為柔和,以減低鏡面感。Referring to FIGS. 2A and 2B , the surface S of the filling structure 150 is a rough surface. In some embodiments, as shown in FIG. 2A , the surface S of the filling structure 150 may be convex, that is, the thickness of the filling structure 150 near the middle is greater than the thickness of the filling structure 150 near the retaining walls 120 on both sides. In other embodiments, as shown in FIG. 2B , the surface S of the filling structure 150 may be concave, that is, the thickness of the filling structure 150 near the middle is smaller than the thickness of the filling structure 150 near the retaining walls 120 on both sides. In some embodiments, the height difference H between the highest point and the lowest point of the surface S of the filling structure 150 may be between 15 nm and 120 nm. In this way, the image reflected by the reflective element 140 can be made softer to reduce the mirror feeling.

請參照圖1,在一些實施例中,畫素結構10還包括第二電極160及第二基板170,依序設置於擋牆120、發光元件130及反射元件140上。發光元件130與第一電極110及第二電極160電性連接。圖1中雖繪示一整層的第二電極160,但並非用以限定本發明,第二電極可依據實際需求具有圖案化的設計。Referring to FIG. 1 , in some embodiments, the pixel structure 10 further includes a second electrode 160 and a second substrate 170 , which are sequentially disposed on the blocking wall 120 , the light-emitting element 130 and the reflective element 140 . The light-emitting element 130 is electrically connected to the first electrode 110 and the second electrode 160 . Although a whole layer of second electrode 160 is shown in FIG. 1 , this is not intended to limit the present invention. The second electrode can have a patterned design according to actual requirements.

圖3A至圖3C是依照本發明一實施例的一種畫素結構的製造流程的剖視示意圖。在此必須說明的是,圖3A至圖3C的實施例沿用圖1的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。3A to 3C are schematic cross-sectional views of a manufacturing process of a pixel structure according to an embodiment of the present invention. It must be noted here that the embodiments of FIGS. 3A to 3C follow the component numbers and part of the content of the embodiment of FIG. 1 , where the same or similar numbers are used to represent the same or similar elements, and references with the same technical content are omitted. instruction. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

請參照圖3A,形成擋牆120於第一基板100之上,其中擋牆120具有多個開口OP。舉例來說,可將擋牆材料層塗佈於第一基板100之上,之後透過微影製程定義出開口OP,以形成擋牆120。在本實施例中,多個開口OP包括第一開口OP1、第二開口OP2、第三開口OP3及第四開口OP4。在一些實施例中,在形成擋牆120之前,先形成第一電極110於第一基板100上。也就是說,擋牆120的多個開口OP可暴露出部分第一電極110。Referring to FIG. 3A , a retaining wall 120 is formed on the first substrate 100 , wherein the retaining wall 120 has a plurality of openings OP. For example, the barrier material layer can be coated on the first substrate 100, and then the opening OP is defined through a photolithography process to form the barrier 120. In this embodiment, the plurality of openings OP include a first opening OP1, a second opening OP2, a third opening OP3 and a fourth opening OP4. In some embodiments, before forming the blocking wall 120, the first electrode 110 is first formed on the first substrate 100. That is to say, the plurality of openings OP of the retaining wall 120 may expose part of the first electrode 110 .

請繼續參照圖3A,形成發光元件130於多個開口OP的一部分中(例如第一開口OP1、第二開口OP2及第三開口OP3中)。舉例來說,可利用噴墨印刷製程,於第一開口OP1、第二開口OP2及第三開口OP3中依序形成電洞注入層132、電洞傳輸層134及發光層136。噴墨印刷製程例如是在第一開口OP1、第二開口OP2及第三開口OP3中噴滴液態的有機發光材料,再藉由真空乾燥程序使有機發光材料固化而形成對應的有機發光疊層的其中一層。透過重覆上述噴墨印刷製程以及固化程序以形成前述電洞注入層132、電洞傳輸層134及發光層136。然後,可利用真空熱蒸鍍製程,形成電子傳輸層138於發光層136上。在其他實施例中,電洞注入層132、電洞傳輸層134、發光層136及電子傳輸層138可皆透過真空熱蒸鍍製程形成,本發明不以此為限。Please continue to refer to FIG. 3A , the light emitting element 130 is formed in a part of the plurality of openings OP (for example, in the first opening OP1 , the second opening OP2 and the third opening OP3 ). For example, an inkjet printing process can be used to sequentially form the hole injection layer 132 , the hole transport layer 134 and the light-emitting layer 136 in the first opening OP1 , the second opening OP2 and the third opening OP3 . The inkjet printing process is, for example, spraying droplets of liquid organic light-emitting material in the first opening OP1, the second opening OP2, and the third opening OP3, and then solidifying the organic light-emitting material through a vacuum drying process to form a corresponding organic light-emitting stack. One of the layers. The above-mentioned hole injection layer 132, hole transport layer 134 and light-emitting layer 136 are formed by repeating the above-mentioned inkjet printing process and curing process. Then, a vacuum thermal evaporation process can be used to form the electron transport layer 138 on the light-emitting layer 136 . In other embodiments, the hole injection layer 132, the hole transport layer 134, the light emitting layer 136 and the electron transport layer 138 can all be formed through a vacuum thermal evaporation process, but the invention is not limited thereto.

請參照圖3B,形成填充結構150於多個開口OP的另一部分中(例如第四開口OP4中)。形成填充結構150的方法包括噴墨印刷製程。舉例來說,可利用噴滴的方式,將液態的填充材料(未繪示)填入第四開口OP4中,然後藉由真空乾燥程序,使填充材料固化而形成填充結構150。在一些實施例中,可透過控制填充材料的固形分比例來調整填充結構150的厚度,並可透過調整真空乾燥程序的抽氣條件,以影響乾燥速率,進而影響表面形貌,而使填充結構150的表面具有凸面或凹面(可參照圖2A及圖2B)。Referring to FIG. 3B , a filling structure 150 is formed in another part of the plurality of openings OP (for example, in the fourth opening OP4 ). The method of forming the filling structure 150 includes an inkjet printing process. For example, liquid filling material (not shown) can be filled into the fourth opening OP4 by spraying droplets, and then the filling material can be solidified through a vacuum drying process to form the filling structure 150 . In some embodiments, the thickness of the filling structure 150 can be adjusted by controlling the solid content ratio of the filling material, and the air extraction conditions of the vacuum drying process can be adjusted to affect the drying rate, thereby affecting the surface morphology, so that the filling structure 150 The surface of 150 has a convex surface or a concave surface (refer to Figure 2A and Figure 2B).

請參照圖3C,形成反射元件140於填充結構150上且位於第四開口OP4中,其中反射元件140的材料包括膽固醇液晶。形成反射元件140的方法包括噴墨印刷製程。Referring to FIG. 3C , a reflective element 140 is formed on the filling structure 150 and located in the fourth opening OP4, where the material of the reflective element 140 includes cholesteric liquid crystal. The method of forming the reflective element 140 includes an inkjet printing process.

然後,可參照圖1,配置第二電極160及第二基板170於擋牆120、發光元件130及反射元件140上。舉例來說,第二電極160可以先形成於第二基板170上,之後再將形成有第二電極160的第二基板170貼合於擋牆120、發光元件130及反射元件140上,以使第二電極160設置於第二基板170與擋牆120、發光元件130及反射元件140之間。Then, referring to FIG. 1 , the second electrode 160 and the second substrate 170 can be disposed on the retaining wall 120 , the light-emitting element 130 and the reflective element 140 . For example, the second electrode 160 can be formed on the second substrate 170 first, and then the second substrate 170 on which the second electrode 160 is formed is attached to the blocking wall 120, the light-emitting element 130 and the reflective element 140, so that The second electrode 160 is disposed between the second substrate 170 and the blocking wall 120 , the light-emitting element 130 and the reflective element 140 .

經過上述製程,可大致完成畫素結構10的製作。After the above process, the production of the pixel structure 10 can be roughly completed.

圖4是依照本發明的另一實施例的一種畫素結構的剖視示意圖。在此必須說明的是,圖4的實施例沿用圖1的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。FIG. 4 is a schematic cross-sectional view of a pixel structure according to another embodiment of the present invention. It must be noted here that the embodiment of FIG. 4 follows the component numbers and part of the content of the embodiment of FIG. 1 , where the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be described again here.

請參照圖4,本實施例之畫素結構20不同於圖1的實施例之處在於,畫素結構20的發光元件230為微發光二極體,其可透過轉置的方式設置於第一電極110上。發光元件230包括第一發光元件230a、第二發光元件230b及第三發光元件230c,但本發明不以此為限,發光元件230的數量可依實際需求調整。第一發光元件230a、第二發光元件230b及第三發光元件230c可透過擋牆120彼此隔開,並且發出不同顏色的光,舉例來說,第一發光元件230a可發出紅光,第二發光元件230b可發出綠光,第三發光元件230c可發出藍光,但本發明不以此為限。發光元件230與第一電極110電性連接,但不與第二電極160電性連接。Referring to FIG. 4 , the pixel structure 20 of this embodiment is different from the embodiment of FIG. 1 in that the light-emitting element 230 of the pixel structure 20 is a micro-light-emitting diode, which can be disposed on the first surface in a transposed manner. on electrode 110. The light-emitting element 230 includes a first light-emitting element 230a, a second light-emitting element 230b and a third light-emitting element 230c, but the present invention is not limited thereto, and the number of the light-emitting element 230 can be adjusted according to actual needs. The first light-emitting element 230a, the second light-emitting element 230b and the third light-emitting element 230c can be separated from each other through the blocking wall 120, and emit light of different colors. For example, the first light-emitting element 230a can emit red light, and the second light-emitting element 230c can emit red light. The element 230b can emit green light, and the third light-emitting element 230c can emit blue light, but the invention is not limited thereto. The light-emitting element 230 is electrically connected to the first electrode 110 but not to the second electrode 160 .

綜上所述,本發明的畫素結構包括發光元件及反射元件,如此一來,由本發明的畫素結構所構成的顯示層不需貼附裝飾膜於其上,而可在發光元件於非顯示模式時,呈現反射元件的靜態畫面,達到裝飾、美觀的效果,並且發光元件在顯示模式下時不會有因受到貼膜影響而使影像的清晰度下降的問題。To sum up, the pixel structure of the present invention includes a light-emitting element and a reflective element. In this way, the display layer composed of the pixel structure of the present invention does not need to have a decorative film attached to it, but can have the light-emitting element on a non-displayed surface. In the display mode, the static picture of the reflective element is presented to achieve a decorative and beautiful effect, and when the light-emitting element is in the display mode, there will be no problem of reduced image clarity due to the influence of the film.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.

10, 20:畫素結構10, 20: Pixel structure

100:第一基板100: First substrate

110:第一電極110: first electrode

120:擋牆120: retaining wall

130, 230:發光元件130, 230:Light-emitting element

130a, 230a:第一發光元件130a, 230a: first light emitting element

130b, 230b:第二發光元件130b, 230b: second light-emitting element

130c, 230c:第三發光元件130c, 230c: The third light-emitting element

132:電洞注入層132: Hole injection layer

134:電洞傳輸層134: Hole transport layer

136:發光層136: Luminous layer

138:電子傳輸層138:Electron transport layer

140:反射元件140: Reflective element

150:填充結構150: Filling structure

160:第二電極160:Second electrode

170:第二基板170:Second substrate

H:高度差H: Height difference

OP:開口OP: Open your mouth

OP1:第一開口OP1: First opening

OP2:第二開口OP2: Second opening

OP3:第三開口OP3: The third opening

OP4:第四開口OP4: The fourth opening

R:區域R:Region

S:表面S: Surface

圖1是依照本發明的一實施例的一種畫素結構的剖視示意圖。 圖2A是圖1的區域R的一實施例的局部放大剖視示意圖。 圖2B是圖1的區域R的另一實施例的局部放大剖視示意圖。 圖3A至圖3C是依照本發明一實施例的一種畫素結構的製造流程的剖視示意圖。 圖4是依照本發明的另一實施例的一種畫素結構的剖視示意圖。 FIG. 1 is a schematic cross-sectional view of a pixel structure according to an embodiment of the present invention. FIG. 2A is a partially enlarged cross-sectional schematic diagram of an embodiment of the region R in FIG. 1 . FIG. 2B is a partially enlarged cross-sectional schematic view of another embodiment of the region R in FIG. 1 . 3A to 3C are schematic cross-sectional views of a manufacturing process of a pixel structure according to an embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a pixel structure according to another embodiment of the present invention.

10:畫素結構 10: Pixel structure

100:第一基板 100: First substrate

110:第一電極 110: first electrode

120:擋牆 120: retaining wall

130:發光元件 130:Light-emitting component

130a:第一發光元件 130a: first light emitting element

130b:第二發光元件 130b: Second light-emitting element

130c:第三發光元件 130c: The third light-emitting element

132:電洞注入層 132: Hole injection layer

134:電洞傳輸層 134: Hole transport layer

136:發光層 136: Luminous layer

138:電子傳輸層 138:Electron transport layer

140:反射元件 140: Reflective element

150:填充結構 150: Filling structure

160:第二電極 160:Second electrode

170:第二基板 170:Second substrate

OP:開口 OP: Open your mouth

R:區域 R:Region

Claims (9)

一種畫素結構,包括:一基板;一發光元件,設置於該基板之上;一反射元件,設置於該基板之上,其中該反射元件的材料包括膽固醇液晶;一填充結構,設置於該基板與該反射元件之間;以及一擋牆,設置於該發光元件與該反射元件之間,以將該發光元件與該反射元件隔開,其中該基板包括一驅動電路,以驅動該發光元件或該反射元件,使該發光元件在一顯示模式下,該反射元件在一焦點圓錐狀態或一垂直狀態,而該發光元件在一非顯示模式下,該反射元件在一平面狀態。 A pixel structure includes: a substrate; a light-emitting element arranged on the substrate; a reflective element arranged on the substrate, wherein the material of the reflective element includes cholesteric liquid crystal; a filling structure arranged on the substrate and the reflective element; and a retaining wall disposed between the light-emitting element and the reflective element to separate the light-emitting element from the reflective element, wherein the substrate includes a driving circuit to drive the light-emitting element or The reflective element enables the light-emitting element to be in a focal conic state or a vertical state when the light-emitting element is in a display mode, and the reflective element is in a planar state when the light-emitting element is in a non-display mode. 如請求項1所述的畫素結構,其中該填充結構的材料包括環氧樹脂、聚(3,4-乙烯基二氧噻吩):聚苯乙烯磺酸、銅酞菁、鉑酞菁或N,N'-雙[4-(二苯基氨基)苯基]-N,N'-二(1-萘基)聯苯胺。 The pixel structure of claim 1, wherein the material of the filling structure includes epoxy resin, poly(3,4-vinyldioxythiophene): polystyrene sulfonic acid, copper phthalocyanine, platinum phthalocyanine or N ,N'-bis[4-(diphenylamino)phenyl]-N,N'-bis(1-naphthyl)benzidine. 如請求項1所述的畫素結構,其中該填充結構的一表面為凸面或凹面。 The pixel structure as claimed in claim 1, wherein a surface of the filling structure is convex or concave. 如請求項1所述的畫素結構,其中該填充結構的一表面的最高點與最低點的高度差在15nm至120nm之間。 The pixel structure of claim 1, wherein the height difference between the highest point and the lowest point of a surface of the filling structure is between 15 nm and 120 nm. 如請求項1所述的畫素結構,其中該發光元件包括有機發光二極體或微發光二極體。 The pixel structure of claim 1, wherein the light-emitting element includes an organic light-emitting diode or a micro-light-emitting diode. 一種畫素結構的製造方法,包括:形成一擋牆於一基板之上,其中該擋牆具有多個開口;形成一發光元件於該多個開口的一部分中;形成一填充結構於該多個開口的另一部分中;形成一反射元件於該填充結構上且位於該多個開口的該另一部分中,其中該反射元件的材料包括膽固醇液晶,其中該基板包括一驅動電路,以驅動該發光元件或該反射元件,使該發光元件在一顯示模式下,該反射元件在一焦點圓錐狀態或一垂直狀態,而該發光元件在一非顯示模式下,該反射元件在一平面狀態。 A method of manufacturing a pixel structure, including: forming a blocking wall on a substrate, wherein the blocking wall has a plurality of openings; forming a light-emitting element in a part of the plurality of openings; forming a filling structure in the plurality of openings; In another part of the opening; forming a reflective element on the filling structure and located in the other part of the plurality of openings, wherein the material of the reflective element includes cholesteric liquid crystal, and wherein the substrate includes a driving circuit to drive the light-emitting element Or the reflective element is such that when the light-emitting element is in a display mode, the reflective element is in a focal conic state or a vertical state, and when the light-emitting element is in a non-display mode, the reflective element is in a planar state. 如請求項6所述的畫素結構的製造方法,其中形成該填充結構於該多個開口的該另一部分中的步驟包括:以噴滴的方式,將一填充材料填入該多個開口的該另一部分中;以及利用真空乾燥的方式,形成該填充結構。 The method of manufacturing a pixel structure according to claim 6, wherein the step of forming the filling structure in the other part of the plurality of openings includes: filling a filling material into the plurality of openings in a droplet manner. in the other part; and use vacuum drying to form the filling structure. 如請求項7所述的畫素結構的製造方法,更包括:在形成該填充結構的過程中,調整該真空乾燥的抽氣條件以使該填充結構的一表面成為凸面或凹面。 The method of manufacturing a pixel structure as claimed in claim 7 further includes: during the process of forming the filling structure, adjusting the vacuum drying conditions to make a surface of the filling structure become convex or concave. 如請求項6所述的畫素結構的製造方法,其中形成該反射元件的方法包括噴墨印刷製程。 The method of manufacturing a pixel structure as claimed in claim 6, wherein the method of forming the reflective element includes an inkjet printing process.
TW111144755A 2022-11-23 2022-11-23 Pixel structure and manufacturing method thereof TWI822480B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW111144755A TWI822480B (en) 2022-11-23 2022-11-23 Pixel structure and manufacturing method thereof
CN202310379458.1A CN116390555A (en) 2022-11-23 2023-04-11 Pixel structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW111144755A TWI822480B (en) 2022-11-23 2022-11-23 Pixel structure and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TWI822480B true TWI822480B (en) 2023-11-11
TW202423267A TW202423267A (en) 2024-06-01

Family

ID=86963117

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111144755A TWI822480B (en) 2022-11-23 2022-11-23 Pixel structure and manufacturing method thereof

Country Status (2)

Country Link
CN (1) CN116390555A (en)
TW (1) TWI822480B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160005353A1 (en) * 2014-07-02 2016-01-07 James Duane Bennett Multimode Electronic Display
CN208077524U (en) * 2018-03-23 2018-11-09 京东方科技集团股份有限公司 A kind of display device
US20190206307A1 (en) * 2017-12-28 2019-07-04 X Development Llc Display with switchable background appearance
CN217157620U (en) * 2022-05-07 2022-08-09 苏州清越光电科技股份有限公司 Composite display panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160005353A1 (en) * 2014-07-02 2016-01-07 James Duane Bennett Multimode Electronic Display
US20190206307A1 (en) * 2017-12-28 2019-07-04 X Development Llc Display with switchable background appearance
CN208077524U (en) * 2018-03-23 2018-11-09 京东方科技集团股份有限公司 A kind of display device
CN217157620U (en) * 2022-05-07 2022-08-09 苏州清越光电科技股份有限公司 Composite display panel

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
網路文獻 林毓翔 膽固醇液晶材料特性與穩定灰階之研究 國立交通大學 中 華 民 國 一 百 年 八 月 *

Also Published As

Publication number Publication date
CN116390555A (en) 2023-07-04
TW202423267A (en) 2024-06-01

Similar Documents

Publication Publication Date Title
US6080030A (en) Light emitting device, electric device provided with the light emitting device, and method of producing the light emitting device
US6897087B2 (en) Method for producing organic EL display
CN112133811B (en) Display panel, display device and preparation method of display panel
US7198973B2 (en) Method for fabricating an interference display unit
US20040209195A1 (en) Method for fabricating an interference display unit
US7573191B2 (en) Organic EL device having a transflective layer and a light-reflective electrode constituting an optical resonator
US6483562B1 (en) Electrode substrate and reflection type liquid crystal display device having low compatibility between resins
CN109830186B (en) Display panel and manufacturing method thereof
CN106981502A (en) A kind of OLED display panel and preparation method thereof
KR102391399B1 (en) Micro lens array having color change function and Micro LED display module including the same
US20190326486A1 (en) Light emitting element and electronic device
CN107068897A (en) One kind top light emitting-type OLED display panel and display device
WO2007114256A1 (en) Organic electroluminescence multicolor display panel
CN111933670A (en) Display substrate, preparation method thereof and display device
JP2020529029A (en) Display board, display device and manufacturing method of display board
KR20070074051A (en) Black matrix for color filters and manufacturing method thereof
JP2017532599A (en) Device including a convex color conversion element
CN101329468B (en) Color filter substrate, electronic device and manufacturing method thereof
WO2023000419A1 (en) Backlight module and display apparatus
TWI822480B (en) Pixel structure and manufacturing method thereof
KR101236515B1 (en) Color filter substrate for liquid crystal display and method for fabricating the same
WO2023201826A1 (en) Light-emitting plate, preparation method for light-emitting plate, and display terminal
CN113851503A (en) A display substrate, a display panel and a method for preparing the same
US20050248699A1 (en) Color filter of liquid crystal display panel and method of fabricating the same
TWI826140B (en) Display panel