TWI821669B - Method of manufacturing a photomask, photomask, and method of manufacturing a device for a display apparatus - Google Patents

Abstract

Object: To enable precise repair even if a defect occurs in a photomask utilizing a phase shift function. Solution: A photomask repair method, which is for repairing a defect 20 occurring in a photomask having a transfer pattern formed on a transparent substrate 1 by patterning a light semi-transmitting film 2, includes a step of identifying the defect 20 and a repair film forming step of forming a repair film 4. A light semi-transmitting portion 12 has a transmittance Tm (%) (Tm ＞ 25) with respect to light of a representative wavelength of exposure light and a phase shift amount ϕm (degrees) (160 ≤ ϕm ≤ 200). In the repair film forming step, a first film 4a and a second film 4b different in composition from each other are laminated in any order. The first film 4a contains Cr and O while the second film 4b contains Cr, O, and C. The first film 4a does not contain C or contains C in a content smaller than that of the second film. The second film 4b contains O in a content smaller than that of the first film.

Description

Manufacturing method of photomask, manufacturing method of photomask and display device components

The present invention relates to a method for correcting defects caused by a photomask, and in particular, to a method of repairing a photomask suitable for display device manufacturing, a corrected photomask, a manufacturing method of the photomask, and a method for using the photomask. Method for manufacturing components for display devices.

As a mask used for semiconductor integrated circuits, an attenuation type (or halftone type) phase shift mask is known. This phase shift mask is formed by forming a portion equivalent to the light-shielding portion of the binary mask by using a half-tone film with low transmittance and a phase shift amount of 180 degrees.

Patent Document 1 describes that when a phase shifter portion of such a phase shift mask is defective, the defective portion of the phase shifter is arranged to have substantially the same transmittance as the phase shifter portion, and to have substantially the same transmittance as the phase shifter portion. Correction components with the same phase offset.

On the other hand, it is known that when manufacturing a liquid crystal display device, in order to improve its production efficiency, a multi-step mask (multi-tone mask) is used. Some multi-stage masks have, in addition to a light-shielding part and a light-transmitting part, a semi-transmissive part formed by forming a semi-transmissive film on a transparent substrate. Patent Document 2 describes the occurrence of light in the semi-transmissive part. A method for correcting defects by forming a correction film. According to Patent Document 2, the phase difference between the light-transmitting portion where the transparent substrate is exposed and the correction portion formed by forming a correction film on the transparent substrate is 80 degrees or less. Thereby, it is possible to suppress undesirable situations such as a short circuit in the thin film transistor channel caused by a decrease in transmittance due to the phase difference at the interface between the adjacent light-transmitting portion and the correction portion.

Furthermore, Patent Document 3 proposes a photomask using a phase shift film having a high transmittance (30% or more) in the manufacture of a display device. [Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Laid-Open No. 7-146544 [Patent Document 2] Japanese Patent Application Laid-Open No. 2010-198006 [Patent Document 3] Japanese Patent Application Publication No. 2016-71059

[Problem to be solved by the invention]

For example, when a defect occurs in a pattern portion formed of a half-tone film of a half-tone phase shift mask, it is not necessarily easy to correct the defect. It is generally known that when a defect occurs in the photomask and the defect is to be corrected by a correction film, a FIB (focused ion beam) device is used as a correction method.

The FIB device mainly uses gallium ions to deposit carbon-based films. However, according to the inventor's research, the method of using the FIB device to deposit a correction film only on the defective part of the mask may not be able to restore the same function as the mask without defects. . If the mask to be corrected is a so-called binary mask, the correction operation is relatively easy. On the other hand, the inventor's research revealed that when the correction object is a half-tone phase shift mask, even if the above-mentioned FIB device is used to deposit a correction film on the defective part of the mask, it is not easy to cause exposure-related defects. The phase shift amount of the light is approximately 180 degrees and the correction film has the desired transmittance set for the normal part of the halftone film. The reason is also that the FIB device is designed to correct the light-shielding film and does not assume that the phase shift amount and transmittance are individually adjusted to desired values. That is, there is the following problem: In order to study the possibility of applying the FIB device to the phase shift mask, it is necessary to explore the raw materials and formation conditions of the correction film, and optical properties such as transmittance vary depending on the phase shift mask. , even if such efforts are made, the above optical performance may not be achieved.

Furthermore, although defect correction using a FIB device is advantageous in terms of the deposition of correction films for fine defects, in terms of efficiency in covering the area that needs correction with the correction film quickly and evenly, the following laser The CVD (Chemical Vapor Deposition) method is more advantageous. Therefore, the laser CVD method may be more advantageous than the FIB device in the correction of photomasks for manufacturing display devices that are generally large in size (hereinafter referred to as "for flat panel displays (FPD)").

In the above-mentioned Patent Document 2, a laser CVD method is used for defect correction of a semi-transmissive film forming a semi-transmissive part. According to this method, the correction film can be deposited on the defective part relatively efficiently, making it easier to apply to a large-scale FPD photomask. However, the correction film formed by this method is aimed at a semi-transparent film that does not have a phase shift effect.

Currently, as the pixel density of display devices increases, there is an obvious trend towards high definition. In addition, mobile terminals are particularly required to have brightness and power-saving properties. Therefore, in order to achieve this, the photomask used in the manufacturing step also includes fine parts, and technology that can accurately analyze the fine parts is required. As for the tendency to improve resolution, it is believed that it is not necessarily limited to exposure devices. It is also expected that masks have technology to improve resolution. Therefore, the above-mentioned Patent Document 3 proposes a transfer pattern that also utilizes the phase shift effect in a mask for FPD.

However, for the defects caused by the phase-shifting semi-transmissive film, it is necessary to obtain a semi-transmissive film that is both original and formed during the manufacturing step of the photomask (hereinafter also referred to as "normal semi-transmissive film"). ") It is very difficult to obtain a correction film with the same transmittance and phase shift. In particular, the formation method of the correction film has not yet been established for the semi-transparent portion with high transmittance (for example, 25% or more) and a phase shift effect.

The main purpose of the present invention is to provide a technology that can perform precise correction even if a defect occurs in the mask utilizing the phase shift effect. [Technical means to solve problems]

(First Aspect) A first aspect of the present invention is a mask correction method for correcting defects caused by a mask having a transfer pattern on a transparent substrate, the transfer pattern including The semi-transparent part is patterned with a semi-transmissive film. The mask correction method is characterized by including: a step of identifying the above-mentioned defects to be corrected; and a correction film forming step of forming a correction film in order to correct the above-mentioned defects; and The above-mentioned semi-transmissive part has a transmittance Tm (%) of light with a representative wavelength of the exposure light, and a phase shift amount. m (degree) (where, 160≦ m≦200), in the above correction film forming step, the first film and the second film having different compositions are laminated in any order, the above-mentioned first film contains Cr and O, the above-mentioned second film contains Cr, O and C , the first film does not contain C, or contains C in a smaller amount than the second film, and the second film contains O in a smaller amount than the first film. (Second aspect) The second aspect of the present invention is the mask correction method as described in the above-mentioned first aspect, and is characterized in that: Tm>25. (Third Aspect) A third aspect of the present invention is a mask correction method as described in the above-mentioned first or second aspect, characterized in that: the correction film has a transmittance for light of the representative wavelength Rate Tr (%), and phase offset r (degree) satisfies: 30＜Tr≦75, and 160≦ r≦200. (Fourth aspect) A fourth aspect of the present invention is the mask correction method as described in any one of the above-mentioned first to third aspects, characterized in that: in the above-mentioned correction film forming step, applying Laser CVD method. (Fifth aspect) The fifth aspect of the present invention is the mask correction method as described in any one of the above-mentioned first to fourth aspects, characterized in that: the above-mentioned first film has the above-mentioned The transmittance T1 (%) of light representing the wavelength and the phase shift amount 1 (degree), and the transmittance T2 (%) of the above-mentioned second film for the light of the above-mentioned representative wavelength, and the phase shift amount 2 (degree) respectively satisfy the following relationships (1) to (4): (1) 100≦ 1＜200 (2) 2＜100 (3) 55≦T1 (4) 25＜T2＜80. (Sixth aspect) The sixth aspect of the present invention is the mask correction method as described in any one of the above-mentioned first to fifth aspects, characterized in that: Cr contained in the above-mentioned second film The content is greater than the Cr content contained in the above-mentioned first film. (Seventh aspect) A seventh aspect of the present invention is the mask correction method as described in the above-mentioned sixth aspect, wherein the total content of Cr and O contained in the above-mentioned first film is expressed in atomic %. More than 80% of the components of the above-mentioned first film. (Eighth Aspect) An eighth aspect of the present invention is the mask correction method as described in any one of the above-mentioned first to seventh aspects, characterized in that: the first film contains 5 to 45 The second film contains a material containing 20 to 70 atomic % of Cr, 5 to 45 atomic % of O, and 10 to 60 atomic % of C. (Ninth aspect) A ninth aspect of the present invention is the mask correction method as described in any one of the above-mentioned first to eighth aspects, characterized in that: the above-mentioned first film is laminated on the above-mentioned first film. 2 membranes. (Tenth aspect) A tenth aspect of the present invention is the mask correction method as described in any one of the above-mentioned first to ninth aspects, characterized in that: the transfer pattern includes substantially no A light-shielding part that allows exposure light to pass through. (Eleventh aspect) An eleventh aspect of the present invention is the mask correction method as described in any one of the above-mentioned first to tenth aspects, characterized in that: the transfer pattern includes substantially no The light-shielding portion transmits exposure light, and the semi-transmissive portion is sandwiched between the light-shielding portions. (Twelfth aspect) A twelfth aspect of the present invention is a mask correction method as described in any one of the above-mentioned aspects 1 to 11, which includes a subsequent step in which the correction film is After the forming step, a supplementary film having light-shielding properties is formed, and the shape of the correction semi-transparent portion formed by forming the correction film is adjusted. (13th Aspect) A 13th aspect of the present invention is the mask correction method as described in any one of the above-mentioned 1st to 12th aspects, which further has a previous step, which step is based on the above-mentioned correction film. Before the forming step, the defective part or the film around the defect is removed to expose the transparent substrate. (Fourteenth aspect) The fourteenth aspect of the present invention is the mask correction method as described in any one of the above-mentioned aspects 1 to 13, characterized in that: the above-mentioned mask is used for manufacturing a display device Those who use components. (15th Aspect) A 15th aspect of the present invention is a method for manufacturing a photomask, which includes the mask correction method as described in any one of the above-mentioned 1st to 14th aspects. (Sixteenth Aspect) A sixteenth aspect of the present invention is a photomask having a transfer pattern including a semi-transmissive portion formed by patterning a semi-transmissive film formed on a transparent substrate, and the above-mentioned A correction film is formed on the defective part of the semi-transparent part, and the semi-transparent part has a transmittance Tm (%) (where Tm > 25) for light with a representative wavelength of the exposure light, and a phase shift amount m (degree) (where, 160≦ m≦200), the correction film has a laminated film in which a first film containing Cr and O and a second film containing Cr, C, and O are laminated in any order, and the first film does not contain C, or The second film contains C in a smaller amount than the second film, and the second film contains O in a smaller amount than the first film. (Seventeenth aspect) A seventeenth aspect of the present invention is the photomask as described in the above-mentioned sixteenth aspect, wherein the correction film has a transmittance Tr (%) for light of the above-mentioned representative wavelength, and a phase Offset r (degree) satisfies: 30＜Tr≦75, and 160≦ r≦200. (Eighteenth aspect) An eighteenth aspect of the present invention is the photomask as described in the above-mentioned sixteenth or seventeenth aspect, wherein the correction film is a laser CVD film. (19th Aspect) A 19th aspect of the present invention is the photomask as described in any one of the 16th to 18th aspects, and is characterized in that: the first film has a specific wavelength for the representative wavelength. Light transmittance T1 (%), and phase shift amount 1 (degree), and the transmittance T2 (%) of the above-mentioned second film for the light of the above-mentioned representative wavelength, and the phase shift amount 2 (degree) respectively satisfy the following relationships (1) to (4): (1) 100≦ 1＜200 (2) 2＜100 (3) 55≦T1 (4) 25＜T2＜80. (Twentieth aspect) A twentieth aspect of the present invention is the photomask as described in any one of the above-mentioned sixteenth to nineteenth aspects, characterized in that: the above-mentioned first film and the above-mentioned second film both include Cr, and the Cr content contained in the second film is greater than the Cr content contained in the first film. (Twenty-first aspect) A twenty-first aspect of the present invention is the photomask as described in the above-mentioned twenty-first aspect, wherein the total content of Cr and O contained in the above-mentioned first film is the above-mentioned first film in atomic %. 1More than 80% of the film’s ingredients. (22nd aspect) The 22nd aspect of the present invention is the photomask as described in any one of the 16th to 21st aspects, characterized in that: the first film contains 5 to 45 atomic % of Cr and 55 to 95 atomic % of O. The second film includes a material containing 20 to 70 atomic % of Cr, 5 to 45 atomic % of O, and 10 to 60 atomic % of C. (Twenty-third aspect) A twenty-third aspect of the present invention is the photomask as described in any one of the above-mentioned sixteenth to twenty-second aspects, characterized in that: the above-mentioned second film is laminated on the above-mentioned first film. membrane. (24th aspect) A 24th aspect of the present invention is the photomask as described in any one of the 16th to 23rd aspects, characterized in that: the transfer pattern has a pattern to be formed on the transparent The light-shielding part is formed by patterning the light-shielding film on the substrate. (Twenty-fifth aspect) A twenty-fifth aspect of the present invention is the photomask as described in any one of the above-mentioned sixteenth to twenty-third aspects, characterized in that: the transfer pattern includes a pattern that does not substantially expose The light-shielding portion transmits light, and the semi-transmissive portion includes a portion sandwiched by the light-shielding portion. (26th Aspect) A 26th aspect of the present invention is the photomask as described in any one of the 16th to 23rd aspects, wherein the transfer pattern has a pattern to be formed on the transparent substrate. A light-shielding part formed by patterning the light-shielding film, and a supplementary film having light-shielding properties different from that of the above-mentioned light-shielding film is formed near the edge of the correction semi-transmissive part formed by forming the above-mentioned correction film. (27th Aspect) A 27th aspect of the present invention is the photomask as described in any one of the 16th to 26th aspects, and is characterized in that: the photomask is used for manufacturing components for display devices. By. (Aspect 28) A twenty-eighth aspect of the present invention is a method of manufacturing a component for a display device, which includes: preparing a photomask as described in any one of the sixteenth to twenty-seventh aspects; and a transfer step, which involves exposing the above-mentioned photomask with an exposure device to transfer the above-mentioned transfer pattern to the transferred object. [Effects of the invention]

According to the present invention, even if a defect occurs in the mask utilizing the phase shift effect, precise correction can be performed.

Hereinafter, embodiments of the mask correction method, the mask manufacturing method, the mask, and the manufacturing method of elements for a display device according to the present invention will be described.

The mask correction method of the present invention can be applied when defects occur in the transfer pattern formed on the transparent substrate.

＜Masks targeted for defect correction＞ Here, a mask to which the mask correction method of the present invention is applied will be described.

A mask to which the mask correction method of the present invention is applied has a transfer pattern formed on a transparent substrate by patterning one or a plurality of optical films respectively. Furthermore, at least one of the optical films is a semi-transmissive film with specific transmittance and phase shift function for exposure light. The semi-transparent film is a film that shifts the phase of the transmitted exposure light by a desired amount.

That is, the object of the mask correction method of the present invention can be to prepare a blank mask (or mask intermediate) with at least the above-mentioned semi-transmissive film formed on a transparent substrate, and form a transfer pattern through a photolithography step. Photomask, or photomask intermediate.

Examples of the transfer pattern include a patterned semi-transmissive film formed on a transparent substrate including a light-transmitting part and a semi-light-transmitting part, or a pattern formed by separately forming a semi-transmissive film and a light-shielding film formed on a transparent substrate. The patterned film having a light-transmitting part, a light-shielding part, and a semi-light-transmitting part may further have an additional film pattern.

When the mask is a mask for FPD, the present invention is advantageously applied.

The photomask for FPD is different from the photomask for semiconductor device manufacturing. Not only is it usually larger in size (for example, a quadrilateral with one side of the main surface being about 200 to 2000 mm, and the thickness is about 5 to 20 mm), it is also heavier. Various.

The transparent substrate is not particularly limited as long as it has sufficient transparency for the exposure wavelength used for exposure of the photomask. For example, quartz and various glass substrates (soda-lime glass, aluminosilicate glass, etc.) can be used, but a quartz substrate is particularly preferred.

The optical properties of the semi-transmissive film constituting the semi-transmissive part are exemplified below.

The object of the mask correction method of the present invention is a semi-transparent portion having a transmittance Tm (%) for light of a representative wavelength of exposure light. When the situation of 25<Tm is satisfied, the effect of the present invention is particularly obvious. For example, 25<Tm≦80. Furthermore, in this specification, the transmittance is the transmittance when the transmittance of the transparent substrate is set to 100%.

Here, regarding the exposure light, as the light source of the exposure device of the FPD mask, light having a wavelength mainly of 300 to 500 nm can be used. For example, a light source having a wavelength range of any one of i-rays, h-rays, and g-rays or a plurality of these rays can be suitably used. In particular, a high-pressure mercury lamp containing these wavelengths is often used. In this case, the representative wavelength of the exposure light may be any wavelength included in the wavelength range of i-rays to g-rays. For example, the h-ray (405 nm) close to the central value of these wavelength regions can be set as the above-mentioned representative wavelength. In the following description, h-rays will be used as representative wavelengths unless otherwise specified. Of course, a wavelength range on the shorter wavelength side than the above (for example, 300-365 nm) can also be used as the exposure light.

In addition, the phase shift amount of the above-mentioned semi-transmissive film m can be set to approximately 180 degrees with respect to the light of the above-mentioned representative wavelength. Here, "approximately 180 degrees" means a range of 160 to 200 degrees. More preferably, it can have a phase shift of 160 to 200 degrees relative to all major wavelengths contained in the exposed light (such as i-rays, h-rays, and g-rays).

The deviation in the phase shift amount in the wavelength range of i-rays to g-rays is preferably 40 degrees or less.

Furthermore, it has the transmittance Tm and the phase shift amount as mentioned above. The mask of the semi-transparent part of m can improve the resolution of the transfer pattern compared to the so-called binary mask. For example, there is known a photomask in which a light-transmitting part and a semi-transmitting part are arranged adjacent to each other, and the resolution is improved by diffraction and interference of each transmitted light generated at the junction. In such a so-called phase shift mask, the transmittance of the semi-transmissive portion is usually set to 10% or less.

On the other hand, the transfer pattern may have a light-transmitting part, a semi-light-transmitting part, and a light-shielding part. That is, a mask having a transfer pattern formed by patterning a semi-transmissive film and a light-shielding film formed on a transparent substrate can also be a target of the mask correction method of the present invention.

For example, in the mask described in Patent Document 3, when the light-transmitting part and the semi-light-transmitting part are not adjacent to each other and a light-shielding part is interposed between them, the semi-light-transmitting part is formed by the intervening light-shielding part. In such a situation, the depth of focus can also be improved (increased) by utilizing the light that passes through the semi-transparent part and is in an inverted relationship with the translucent part, and can also reduce the MEEF (mask error enhancement factor) , and the advantages of the dose of light energy required for exposure (Dose).

In this way, the transfer pattern is sometimes designed so that the semi-transparent portion having a phase shifting effect is not directly adjacent to the light-transmitting portion, but is separated from the light-shielding portion, or a semi-transparent portion having substantially no phase shifting effect is arranged. at a specific location nearby. In this case, it is useful to design the transmittance Tm of the semi-transparent portion with phase shift function to be relatively low compared to the transmittance of the ordinary halftone phase shift mask (for example, 10% or less). High (such as Tm>25) will have a significant effect on improving analytical performance. Regarding such a phase-shifted semi-transmissive portion with high transmittance, a more preferable range of the transmittance Tm is 30<Tm≦75, and a more preferable range is 40<Tm≦70. In this case, the transmitted light of the semi-transparent part and the transparent part separated by a specific distance can be appropriately interfered, thereby improving the light intensity distribution curve of the transmitted light formed by the transparent part.

When a defect occurs in the semi-transparent part with such high transmittance and phase shift effect, the defect must be corrected.

In order to correct this defect, the mask correction method of the present invention is applied.

<First Embodiment of Mask Correction Method> Hereinafter, a first embodiment of the mask correction method of the present invention will be described with reference to FIG. 1 .

FIG. 1(a) shows the normal pattern portion of the mask that is the target of correction in the first embodiment. The transfer pattern 10 to be corrected in the first embodiment has a translucent portion 11 exposing the transparent substrate 1 and a semi-transmissive portion 12 having a semi-transmissive film 2 having a phase shifting effect formed on the transparent substrate 1 .

First, in the step of identifying defects, defects produced in the semi-transmissive film 2 are identified and set as correction targets. Regarding the white defect that should exist in the semi-transparent film 2, first, the correction area where the following correction film 4 is to be formed is determined. If necessary, the step of removing the defective part or the useless film (remaining semi-transparent film 2) and foreign matter around the defective position (previous step) is carried out, and the shape of the correction area where the correction film 4 is to be formed is adjusted to form the correction film. 4. The useless residual film 2 can be removed by evaporation using laser (Laser Zap, laser shooting) or the like.

On the other hand, the method of the present invention is implemented in the case where the correction of the present invention is performed on the semi-transparent portion 12 that has redundant defects such as black defects, adhesion of foreign matter, and remaining semi-transparent portion 12 of the light-shielding film that should be removed in the patterning step. In this case, the correction film 4 of the present invention can be formed in a state where the transparent substrate 1 is exposed by removing excess matter in the same manner as above.

FIG. 1(a) shows a transfer pattern 10 formed by patterning a semi-transmissive film 2 having a phase shift function formed on a transparent substrate 1 . The semi-transparent part 12 has a transmittance Tm (%) for light with a representative wavelength of the exposure light (herein, h-ray), and Tm>25. Specifically, as mentioned above, it can be set to 25<Tm≦80, for example. In addition, the semi-transparent part 12 has a phase shift amount with respect to the light of the above-mentioned representative wavelength. m. Here, m is set to 160 ≦ m ≦ 200 (degree).

The situation in which white defects occur in the semi-transparent part 12 is shown in FIG. 1(b). The white defect may be a white defect that lacks the semi-transparent film 2 that should exist, or it may be an artificial white defect formed by removing excess parts of the semi-transparent part 12 that has excess defects. A correction film 4 is formed on the white defective portion 20 for correction. The correction film formation step will be described in detail later. As a method for forming the correction film 4, a laser CVD method can be suitably used.

The laser CVD method introduces film raw materials and imparts heat and/or light energy through laser irradiation to form a film (also called laser CVD film). As the film raw material, Cr(CO) ₆ (chromium hexacarbonyl), Mo(CO) ₆ (molybdenum hexacarbonyl), W(CO) ₆ (tungsten hexacarbonyl), etc., which are metal carbonyl group 6 elements, can be used. Among them, it is preferable to use Cr(CO) ₆ as the film material for mask correction because it has excellent chemical resistance against cleaning and the like. In this first embodiment, a case where Cr(CO) ₆ is used as a membrane raw material will be described.

As the laser for irradiation, a laser in the ultraviolet range is suitably used. The raw material gas is introduced into the laser irradiation area, and the film is deposited by the action of optical CVD and/or thermal CVD. For example, Nd YAG laser with a wavelength of 355 nm can be used. As the carrier gas, Ar (argon) can be used, and N (nitrogen) can also be included.

Ordinary laser CVD equipment is designed to use laser CVD to form a light-shielding correction film. However, in the present invention, a semi-transparent correction film 4 having a phase shifting effect is formed. Therefore, conditions such as the flow rate and energy power of the introduced gas must be selected.

As shown in FIG. 1(d) , the correction film 4 of the present invention has a laminated structure of a first film 4a and a second film 4b. The lamination order may be any one on top, and it is not excluded that an additional film may be provided within the range that does not impede the effects of the present invention. In the following description, it is assumed that the correction film 4 has desired optical performance by laminating the second film 4b on the first film 4a.

(First film) FIG. 1(c) shows the steps of forming the first film 4a. The correction film 4 is formed by laminating the first film 4a and the second film 4b laminated thereon, so that the correction film 4 has a phase shift amount of approximately 180 degrees with respect to the light of the representative wavelength of the exposure light. r (degree), the first film 4a has an appropriate phase shift amount 1 (degree). It is preferable that the first film 4a bears the above-mentioned phase shift amount. More than 50% of r's so-called "phase shift control film" functions.

That is, regarding the phase shift amount of the first film 4a 1 and the phase offset of correction film 4 r, can be set to: 160≦ r≦200, and 100≦ 1<200. Phase offset 1 can be better to 120≦ 1<180, more preferably 130≦ 1<160.

The transmittance T1 of the first film 4a with respect to the light of the above-mentioned representative wavelength is preferably 55≦T1, More specifically, it can be set to 55≦T1≦95, Better for 60≦T1≦80, Furthermore, it is better to 60≦T1≦70.

Furthermore, regarding the above-mentioned phase offset amount, for example, 160≦ r≦200 is set to include 160＋360M≦ r≦200+360M (M is a non-negative integer). Hereinafter, the phase shift amount has the same meaning.

The main components of the first film 4a are preferably Cr (chromium) and O (oxygen). That is, the total of Cr and O is set to 80% or more of the total component of the first film 4a. The total content of Cr and O is more preferably 90% or more, further preferably 95% or more.

In addition, content % of a film component means atomic %. The same is true below.

C (carbon) contained in the raw material gas may not be included in the first film 4a, but when it is included, it is preferably 20% or less, more preferably 10% or less. Furthermore, the C content of the first film 4a is preferably less than the C content of the second film 4b described below, preferably 2/3 or less of the C content of the second film 4b, more preferably 1/3 or less.

It is preferable that the largest component (having the largest content) of the first film 4a is O, and the content of O is 50% or more. A preferred composition of the first film 4a is to contain 5 to 45% of Cr and 55 to 95% of O. Moreover, it is preferable that the Cr content of the first film 4a is 5 to 30%. The first film 4a more preferably contains 20 to 30% of Cr and 70 to 80% of O. The Cr content of the first film 4a is preferably smaller than that of the second film 4b described below.

By having the composition as described above, the first film 4a can be formed into a film having a high transmittance and a sufficient amount of phase shift. Furthermore, the first film 4a can be formed by laser CVD.

The first film 4a is formed with the above composition. In order to achieve the above-mentioned optical characteristics, the film thickness of the first film 4a can be set to 1000 to 4000 Å, more preferably 1300 to 2500 Å.

The optical characteristics of the first film 4a are illustrated in Fig. 4(a). Figure 4(a) shows the phase shift amount when the first film 4a as the phase shift control film is a single layer, with the vertical axis being the phase shift amount (degree) and the horizontal axis being the transmittance (%). 1. A specific example of the relationship between 1 and transmittance.

(2nd film) FIG. 1(d) shows the steps of forming the second film 4b on the first film 4a. The second film 4b has a transmittance T2 (%) required to adjust the transmittance Tr (%) of the correction film 4 formed by laminating the first film 4a to a desired value. That is, the second film 4b can be a so-called "transmission control film".

The transmittance T1 of the first film 4a and the transmittance T2 of the second film 4b are preferably T1>T2.

The better transmittance T2 of the second film 4b can be set as 25＜T2＜80、 Better for 30≦T2＜70、 Furthermore, it is better to 45≦T2<65.

Furthermore, the phase shift amount of the second film 4b 2 is less than the phase shift amount of the first film 4a 1, set to 2<100. Specifically, it can be set to 20≦ 2<100, preferably 20≦ 2<60, more preferably 30≦ 2<50.

The main components of the second film 4b are preferably Cr, O and C. That is, it is preferable that Cr, O, and C constitute 90% or more of the total components of the second film 4b, and more preferably 95% or more.

It is preferable that the C contained in the second film 4b is larger than the C contained in the first film 4a. Moreover, it is preferable that the content of Cr in the second film 4b is greater than that in the first film 4a.

Specifically, the composition of the second film 4b can be set to include 20 to 70% of Cr, 5 to 45% of O, and 10 to 60% of C. More preferably, the composition of the second film 4b can be set to contain 40 to 50% of Cr, 15 to 25% of O, and 25 to 35% of C.

When forming the first film 4a and the second film 4b by the laser CVD method, raw material gases having different components and component ratios may be used, or the same raw material gas may be used but different formation methods may be used. conditions to obtain mutually different compositions and physical properties.

In this first embodiment, the source gas of the first film 4a and the second film 4b is the same (Cr(CO) ₆ ), but different formation conditions are applied. That is, when forming the first film 4a, the flow rate of the raw material gas can be made smaller than that of the second film 4b (for example, 1/2 or less, further 1/8 to 1/6, etc.), and the irradiation power of the laser can be The density is also smaller (for example, 1/2 or less) than that of the second film 4b. These methods are effective in limiting the decomposition reaction of the raw material gas and forming the first film 4a that has a sufficient phase shift amount and does not have an excessively low transmittance. As an example, the raw material gas flow rate can be set to 30 cc/min or less, preferably 10 to 20 cc/min, and the laser irradiation power density can be set to 3 mW/cm ² or less, preferably 1 to 2 mW/ cm ² . In addition, the laser irradiation time can be set to 10 sec or more, preferably 20 to 30 sec. That is, it is useful to set the raw material gas flow rate and the laser irradiation power density for forming the first film 4a to relatively low flow rates and low energy, and to apply long-term film formation compared to the second film 4b described below. On the other hand, when the second film 4b is formed, the source gas flow rate is increased and the C content is increased compared to the case of the first film 4a. In addition, the laser irradiation power density used to form the second film 4b is preferably greater than that of the first film 4a. Thereby, the decomposition reaction of the raw material gas is accelerated, and the second film 4b is formed whose transmittance is smaller than that of the first film 4a even if the film thickness is small. As an example, the raw material gas flow rate for forming the second film 4b is set to 60 cc/min or more, preferably about 80 to 110 cc/min, and the laser irradiation power density may also be set to 6 mW/cm ² Above, 8 to 12 mW/cm ² is preferred. In addition, the laser irradiation time is shorter than that of the first film 4a, for example, it can be 1.0 sec or less, preferably 0.5 to 0.8 sec. That is, the raw material gas flow rate and the laser irradiation power density for forming the second film 4b can be set to relatively high flow rate, high energy, and short time conditions. The formation conditions of the second film 4b can also be said to be greater high-energy conditions than when laser CVD is used to form a light-shielding correction film (for example, when correcting a binary mask). By applying such conditions, the second film 4b becomes a thin film and the phase shift amount 2. It is extremely small and has excellent chemical resistance due to its high film density.

As a film that satisfies desired optical properties with the above composition, the film thickness of the second film 4b can be set to 450 to 1450 Å, more preferably 550 to 950 Å. It is preferable to make the film thickness of the second film 4b smaller than the film thickness of the first film to reduce the phase shift amount, thereby making it easier to adjust the phase shift amount as the correction film.

The optical characteristics of the second film 4b are illustrated in Fig. 4(b). Figure 4(b) shows the phase shift amount when the second film 4b as the transmission control film is a single layer, with the vertical axis being the phase shift amount (degree) and the horizontal axis being the transmittance (%). A specific example of the relationship between 2 and transmittance T2.

(Laminated film) By laminating the first film 4a and the second film 4b, it is possible to form a film having the following phase shift amount with respect to the light of the representative wavelength. r (degree), and correction film 4 for transmittance Tr (%). That is, the correction film 4 formed by laminating the first film 4a and the second film 4b can be set to: 160≦ r≦200, Tr＞25.

The transmittance Tr of the correction film 4 is preferably in the same range as the transmittance Tm of the semi-transmissive part. Can be set to 30＜Tr≦75、 Furthermore, it is better to 40＜Tr≦70.

The order in which the first film 4a and the second film 4b are stacked is arbitrary. However, due to the difference in the above composition, the second film 4b has higher chemical resistance than the first film 4a. Therefore, by arranging the second film 4b on the upper layer side, the washing resistance and the like can be improved, so it is relatively good.

As the correction film 4 including the first film 4a and the second film 4b, The Cr-C-O composition ratio can be set to Cr: 30 to 70%, O: 5 to 35%, C: 20 to 60%, Better for Cr: 40～50%, O: 5～25%, C: 35～45%.

FIG. 4(c) illustrates the optical characteristics of the correction film 4 formed by laminating the first film 4a and the second film 4b. Figure 4(c) shows the phase shift of the correction film 4 in which the first film 4a and the second film 4b are laminated, with the vertical axis being the phase shift amount (degree) and the horizontal axis being the transmittance (%). A specific example of the relationship between quantity and transmittance. According to FIG. 4 , it can be seen that in the correction film 4 in which the first film 4 a and the second film 4 b are laminated, the first film 4 a is a single layer (see FIG. 4 (a)) or the second film 4 b is a single layer ( The relationship between the phase shift amount and the transmittance that cannot be obtained when referring to Figure 4(b) is that the optical characteristics are high transmittance for the exposed light and have a phase shift effect.

That is, by applying the above-described sequential mask correction method, even if a defect occurs in the semi-transmissive film 2 with a specific transmittance and a phase shift effect, precise correction can be performed to restore the optical characteristics. More specifically, according to the mask correction method of the first embodiment, by having the correction film 4 have a two-layer structure, correction can be performed so as to have substantially the same optical physical properties as those of a high-transmittance phase shift film. , thereby achieving the previously difficult correction. Here, since both the first film 4a and the second film 4b can be formed by the same film formation method (herein, the laser CVD method), there is no need to use multiple types of correction devices. The above content is very advantageous in the correction of a mask for display device manufacturing described below, for example.

Furthermore, in the first embodiment shown in FIG. 1 , the semi-transparent part 12 is adjacent to the translucent part 11 . For this kind of transfer pattern, the correction film 4 with an area larger than the required area can also be formed through the above steps, and then the correction film 4 is removed near the outer edge, and the correction film 4 at the interface with the light-transmitting part 11 can be adjusted. edge shape. The method can use laser shooting (Laser Zap), for example. In this way, even if the side surface of the correction film 4 is tilted during the formation process, the edge shape of the film can be adjusted, for example, to make it closer to the side surface perpendicular to the transparent substrate 1, etc., so that the phase generated at the interface can be adjusted. Offset effects function more advantageously.

<Second Embodiment of Mask Correction Method> Next, a second embodiment of the mask correction method of the present invention will be described with reference to FIG. 2 .

Figure 2 shows a method of correcting a defective mask having a transfer pattern 10', which is formed by separately patterning the semi-transmissive film 2 and the light-shielding film 3 on the transparent substrate 1. The one who succeeds.

That is, the transfer pattern 10' to be corrected in the second embodiment has the light-transmitting part exposing the transparent substrate 1, the light-shielding part 13 having at least the light-shielding film 3 formed on the transparent substrate 1, and the light-shielding part 13 on the transparent substrate 1. A semi-transmissive part 12 of a semi-transmissive film 2 having a phase shifting effect is formed on the substrate 1 . In FIG. 2(a) , only the light-shielding portion 13 and the semi-transparent portion 12 are shown, and the light-transmitting portion is omitted. An anti-reflection layer may also be formed on the surface of the light-shielding film 3 .

In the second embodiment, the semi-transmissive part 12 and the light-shielding part 13 are adjacent to each other and are sandwiched by the light-shielding part 13 in the direction in which the semi-transparent part 12 and the light-shielding part 13 are arranged. In Figure 2(a), the semi-transparent part 12 and the translucent part are not adjacent.

Here, the semi-transparent portion 12 is configured by having the same transmittance Tm (%) and phase shift amount as in the first embodiment. A phase shift film of m (degrees) is formed. The light shielding part 13 is a film that does not substantially transmit exposure light, and preferably has an OD (Optical Density)≧3.

FIG. 2(b) shows a situation in which white defects 20 are generated in the semi-transparent part 12 of the photomask shown in FIG. 2(a).

FIG. 2(c) shows that the semi-transparent film 2 and the light-shielding film 3 around the white defect 20 are removed to expose the transparent substrate 1, and the area for forming the correction film 4 (hereinafter also referred to as the correction area) 21 is adjusted. The steps of the shape (previous steps). The method of removing the film can be evaporation using laser (Laser Zap), etc.

FIG. 2(d) shows the step of forming the first film 4a on the exposed surface of the transparent substrate 1 in the correction area 21, which is the same as in the first embodiment. Furthermore, in FIG. 2(e) , the second film 4b is laminated on the formed first film 4a. The same optical properties, composition, and film formation conditions as those in the first embodiment can be applied to the first film 4a and the second film 4b. Therefore, the correction film 4 having a double-layer structure is formed in the same manner as in the first embodiment.

In the second embodiment, the correction area 21 is adjacent to the light shielding portion 13 and the semi-transmissive portion 12 . Furthermore, this example shows an example in which the correction area 21 is surrounded by the light-shielding portion 13 and/or the semi-transmissive portion 12 . Here, the correction film is formed so that the edges of the semi-transmissive film 2 and/or the light-shielding film 3 forming the outer edge of the correction area 21 and the edges of the first film 4a or the second film 4b do not overlap with each other. The reason is that if the first film 4a and/or the second film 4b overlap with the edge of the remaining semi-transmissive film 2, the transmittance of the overlapped portion will be lower than that of the normal semi-transmissive film 2, making it impossible to transfer and Defects of identical designs.

Furthermore, the reason is that it is considered that if the first film 4a and/or the second film 4b overlap with the edge of the remaining light-shielding portion 13, energy will be irradiated to the components of the light-shielding film 3 at the edge portion of the light-shielding film 3 ( For example, Cr) causes useless films to begin to grow, causing the transmittance of the nearby semi-transparent portion (including correction) 12 to change.

Therefore, it is expected to perform the following correction step: adjusting the edge position so that the edges of the first film 4a and/or the second film 4b do not overlap with the edges of the semi-transmissive film 2 and the light-shielding film 3 remaining on the transparent substrate 1 . Alternatively, it is better to apply the following correction steps: as shown in FIGS. 2(c) and (d), make the edges of the first film 4a and/or the second film 4b and the semi-transparent film remaining on the transparent substrate 1 2. The edges of the light-shielding film 3 are slightly separated.

The separation distance between the edges of the first film 4a and/or the second film 4b and the edges of the semi-transparent film 2 and the light-shielding film 3 is preferably 1 μm or less. For example, the separation distance can be set to 0.1 μm to 1 μm. This separation distance is smaller than the resolution limit of the exposure device that exposes the mask, so the separation portion will not be transferred to the transferred object substantially.

Furthermore, in the second embodiment, the light shielding portion 13 is film-removed in the previous step in FIG. 2(c). Therefore, at the time point in FIG. 2(e) when the formation of the correction film 4 is completed, the translucency is corrected. The shape of the light portion 12a (a semi-transmissive portion in which a correction film is formed on part or all of the semi-light portion is also called a correction semi-transmissive portion) 12a becomes different from the shape of the normal pattern semi-transmissive portion 12. Specifically, the width (CD) of the modified semi-transparent portion 12a is larger than the width (CD) of the semi-transmissive portion 12 in the normal pattern.

Therefore, the subsequent steps to make it the same CD as designed are performed in Figure 2(f). That is, in FIG. 2(f) , a light-shielding supplementary film 5 is formed around the edge of the corrected semi-transmissive portion 12a so that it becomes a correct CD. The supplementary film 5 may be formed by, for example, a focused ion beam method (Focused Ion Beam Deposition) or a laser CVD method.

Since the supplementary film 5 has a different film formation method from that of the light-shielding film 3 in the normal pattern, the supplementary film 5 may have different components and component ratios, that is, the composition may be different from that of the light-shielding film 3 . The supplementary film 5 may be a film containing carbon as a main component, for example. In terms of optical properties, it is preferable that the replenishing film 5 does not substantially transmit exposure light and has an OD (Optical Density) of 3 or more.

In FIG. 2(f) , the supplementary film 5 is formed in such a way that the CD of the semi-transmissive part 12a is corrected to become the same as the normal semi-transmissive part 12 before correction. However, when the transmittance of the corrected semi-transmissive part 12a is too large or insufficient relative to the target value, in order to make fine adjustments to bring the transmittance close to the target value, the CD of the corrected semi-transmissive part 12a can be made larger than the normal semi-transmissive part. The light part 12 is larger or smaller. That is, the optical performance of the correction film 4 may be checked after the formation step of the correction film 4 is completed and before the subsequent steps, and based on the results, the size of the supplementary film 5 formed in the subsequent steps may be increased or decreased. In this case, the CD of the modified semi-transmissive portion 12 a is locally smaller or larger than that of the normal semi-transmissive portion 12 .

By applying the above-described sequential mask correction method, it is possible to precisely correct defects caused by the semi-transmissive film 2 having a specific transmittance and a phase shift effect in the same manner as in the first embodiment. .

<Third Embodiment of Mask Correction Method> Next, a third embodiment of the mask correction method of the present invention will be described with reference to FIG. 3 .

Figure 3 shows another correction method for the situation where a mask with a transfer pattern 10' is defective. The transfer pattern 10' is patterned on the transparent substrate 1 by separately patterning the semi-transmissive film 2 and the light-shielding film 3. The one who becomes.

The transfer pattern 10' to be corrected in the third embodiment has a light-transmitting portion exposing the transparent substrate 1, a light-shielding portion 13 having at least a light-shielding film 3 formed on the transparent substrate 1, and a light-shielding portion 13 formed on the transparent substrate 1. The semi-transmissive part 12 of the semi-transmissive film 2 having a phase shifting effect is formed. In FIG. 3(a) , only the light-shielding part 13 and the semi-transparent part 12 are shown, and the light-transmitting part is omitted from the illustration. An anti-reflection layer may also be formed on the surface of the light-shielding film 3 .

In this third embodiment, the semi-transparent part 12 is adjacent to the light-shielding part 13 and is sandwiched between the light-shielding part 13 and not adjacent to the light-transmitting part.

Here, the semi-transparent portion 12 is configured by having the same transmittance Tm (%) and phase shift amount as in the first embodiment. A phase shift film of m (degrees) is formed. The light shielding part 13 is a film that does not substantially transmit exposure light, and preferably has an OD≧3.

FIG. 3(b) shows a situation in which white defects 20 are generated in the semi-transparent part 12 of the photomask shown in FIG. 3(a).

3(c) shows the steps before completely removing the semi-transmissive film 2 in the area connected to the semi-transmissive part 12 where the white defect 20 occurs, exposing the transparent substrate 1, and adjusting the shape of the correction area 22. Furthermore, here, at the same time as the semi-transmissive film 2 is removed, a part of the adjacent light-shielding film 3 is also removed. The method of removing the film can be evaporation using laser (Laser Zap), etc.

FIG. 3(d) shows the step of forming the first film 4a as a phase adjustment film on the exposed surface of the transparent substrate 1 in the correction area 22, similar to that in the first embodiment. Furthermore, in FIG. 3(e) , a second film 4b is laminated on the formed first film 4a as a transmission adjusting film. The same optical properties, composition, and film formation conditions as those in the first embodiment can be applied to the first film 4a and the second film 4b. Therefore, the correction film 4 having a double-layer structure is formed in the same manner as in the first embodiment. In this third embodiment, all the semi-transmissive film 2 that is continuous with the defective semi-transmissive film is removed, so in the corrected photomask, the correction film is not adjacent to the normal semi-transmissive film. Therefore, there will be no separation or overlap of the two films at the interface between the correction film and the normal semi-transparent film. If the size of the separation or overlap is large, there is a risk of being transferred to the transfer object. However, in the third embodiment, there is no such risk, and it is advantageous in this regard.

Furthermore, in the third embodiment, the film of the light shielding portion 13 is removed in the previous step in FIG. 3(c). Therefore, at the time point in FIG. 3(e) when the formation of the correction film 4 is completed, the translucency is corrected. The size of the light portion 12a becomes different from the size of the semi-transmissive portion 12 of the normal pattern. Specifically, the width (CD) of the modified semi-transparent portion 12a is larger than the width (CD) of the semi-transmissive portion 12 in the normal pattern.

Therefore, the subsequent steps to make it the same CD as designed are performed in Figure 3(f). This aspect is the same as that of the second embodiment. The components and optical properties of the light-shielding supplementary film 5 formed in the subsequent steps may be the same as those in the second embodiment. In addition, as in the second embodiment, the transmittance of the semi-transmissive portion 12a can be adjusted and corrected as necessary by forming the size of the supplementary film 5 .

By applying the mask correction method in the above-mentioned sequence, it is possible to precisely correct the defects caused by the semi-transparent film 2 having a specific transmittance and a phase shift effect in the same manner as in the case of the above-mentioned first embodiment. Correction.

＜Mask manufacturing method＞ Furthermore, the present invention includes a method for manufacturing a photomask including the above photomask correction method.

The manufacturing method of the photomask of the present invention can be carried out through the following steps. First, a blank mask containing a semi-transmissive film with a phase shifting effect and a required optical film is prepared on a transparent substrate. The blank mask described here includes a mask intermediate that already has a part of the film pattern. Then, a laser drawing device is used to draw a desired pattern on the resist film (positive type or negative type) formed on the blank mask, and then developed to form a resist pattern. Furthermore, by using the resist pattern as a mask, the optical film is etched to form a transfer pattern. Either dry etching or wet etching can be used for etching. However, for display devices, wet etching is more advantageous, so wet etching is often used.

The mask on which the transfer pattern is formed (or the mask intermediate in which film formation or pattern formation is further performed) is inspected for defects. When white defects or black defects are found, the mask correction method of the present invention is applied to correct the mask.

By following the above procedure, even if a defect occurs in the transfer pattern utilizing the phase shift effect, it can be accurately corrected and a photomask can be manufactured.

＜Mask＞ Furthermore, the present invention includes a mask subjected to the above-mentioned mask correction method.

The photomask has a pattern for transfer, and the pattern for transfer includes a semi-transparent portion formed by patterning a semi-transmissive film formed on a transparent substrate. Furthermore, the photomask further includes a correction semi-transmissive portion, and the correction semi-transmissive portion is partially formed with a correction film made of a material different from the above-mentioned semi-transmissive film. This photomask is obtained by forming a correction film for defects produced in the semi-transparent portion.

The semi-transparent part of the mask has a transmittance Tm (%) (where Tm>25) for light with a representative wavelength of the exposure light, and a phase shift amount. m (degree) (where, 160≦ m≦200), the correction film has a laminated film in which a first film containing Cr and O and a second film containing Cr, C and O are laminated in any order, and the first film does not contain C, or contains The content of C is smaller than that of the second film. The second film contains O, which is smaller in content than that of the first film.

That is, the mask has a normal semi-transmissive part and a modified modified semi-transmissive part.

Furthermore, the transfer pattern may further include a light shielding portion that does not substantially transmit exposure light. In this case, the light-shielding part is formed by forming at least a light-shielding film on the transparent substrate, or may be a laminated structure in which a semi-transparent film is formed on the upper side or the lower side of the light-shielding film.

Regarding the lamination order of the first film and the second film included in the correction film, the optical properties and composition of each of the first film and the second film, the optical properties and composition of the lamination-formed correction film, etc., and the above-mentioned mask correction method The relevant narrative is the same.

The mask having the above structure forms a corrected semi-transmissive part, which is formed by precisely correcting the defects caused by the semi-transmissive film 2 with a specific transmittance and a specific phase shift effect. Therefore, it is very useful for achieving high resolution using the phase shift effect.

Furthermore, examples of materials for the normal semi-transparent film include those containing chromium (Cr), or those containing transition metals and Si (silicon). Examples include Cr or Cr compounds (preferably CrO, CrC, CrN, CrON, etc.), or Zr (zirconium), Nb (niobium), Hf (hafnium), Ta (tantalum), Mo (molybdenum), Ti A material containing at least one of (titanium) and Si, or a material including an oxide, nitride, oxynitride, carbide, or oxynitride of these materials can be used. More specifically, molybdenum silicide nitride (MoSiN), molybdenum silicide oxynitride (MoSiON), molybdenum silicide oxide (MoSiO), silicon oxynitride (SiON), titanium oxynitride (TiON), and the like are included.

In addition, the material of the light-shielding film may be, for example, Cr or its compound (oxide, nitride, carbide, oxynitride, or oxynitride), or may include Mo, W (tungsten), Ta, Silicide of Ti metal, or the above-mentioned compound of the silicide. The material of the light-shielding film is preferably capable of wet etching. The material of the light-shielding film is preferably a material with etching selectivity for the material of the semi-transmissive film. That is, it is preferable that the light-shielding film has resistance to the etchant of the light-shielding film, and the semi-light-shielding film has resistance to the etchant of the light-shielding film.

The use of the photomask of the present invention is not particularly limited.

The present invention is preferably used as a mask utilizing the phase shift effect, and is used for manufacturing a display device including a fine pattern width (CD). For example, the present invention is advantageously applied to a phase including a hole pattern having a CD (diameter) of 3 μm or less (for higher-definition display elements, 1.0 to 2.5 μm, and further 1.0 to 2.0 μm) on the transferred body. Offset mask, and use a phase shift mask with a semi-transparent film with phase shift function. Alternatively, the present invention can also be applied to a line and space pattern having the above CD (line width, or gap width). In particular, as a photomask using a high-transmission phase shift film that is considered an object of the present invention, in order to facilitate the analysis of isolated patterns, a photomask using a semi-transmissive film can be used. Here, when a pattern in which a plurality of patterns are arranged according to a specific regularity and optically influence each other is regarded as a dense pattern, the other patterns are regarded as an isolated pattern.

＜Method for manufacturing components for display devices＞ The present invention includes a method of manufacturing a display device element using the photomask having the above-mentioned structure. The manufacturing method includes: using an exposure device to expose the transfer pattern of the photomask, thereby transferring it to a transferred object. The exposure device can be a projection method or a proximity method. The former is more advantageous when manufacturing high-precision components that can accurately resolve fine patterns through phase shifting.

As optical conditions when using projection method for exposure, the NA (Numerical Aperture, Numerical Aperture) of the optical system is preferably 0.08 to 0.15, and the exposure light source preferably includes i-rays. Of course, exposure can also be performed using a wavelength range including i-rays to g-rays.

According to the manufacturing method of a display device element of the present invention, the correction film is made into a two-layer structure to correct defects in the semi-transmissive portion, so that it can have substantially the same optical physical properties as a high-transmittance phase shift film. Implement corrections to achieve previously difficult corrections. That is, the defects caused by the semi-transparent film with high transmittance and phase shift function can be precisely corrected. Here, the first film and the second film constituting the correction film can be formed by the laser CVD method, so there is no need to use multiple types of correction devices. This aspect is especially suitable for the correction of photomasks for manufacturing larger display devices. Very beneficial.

＜Example of changes＞ The mask correction method, the mask manufacturing method, the mask and the manufacturing method of display device components of the present invention are not limited to the aspects disclosed in the above embodiments as long as the above-mentioned functions and effects are not lost.

For example, as described above, the present invention is very useful when applied to a photomask for manufacturing elements for display devices. However, the use of the photomask is not particularly limited and can also be applied to a photomask for manufacturing semiconductor devices.

Furthermore, the photomask to which the present invention is applied may have other optical films or functional films in part of the phase shift film or the light-shielding film, or in other parts than these.

1:Transparent substrate 2: Semi-transparent film 3:Light-shielding film 4: Correction film 4a: 1st film 4b: 2nd membrane 5: Supplementary film 10: Pattern for transfer 10': Pattern for transfer 11: Transparent part 12: Semi-transparent part 12a: Correct semi-transparent part 13:Light shielding part 20:White defect 21: Correction area 22: Correction area

1 is an explanatory diagram schematically showing the outline of the mask correction method in the first embodiment of the present invention, in which (a) is a diagram showing an example of a normal pattern, and (b) is a diagram showing an example of a white defect. , (c) is a diagram showing an example of forming the first film, and (d) is a diagram showing an example of forming the second film. 2 is an explanatory diagram schematically showing the outline of the mask correction method in the second embodiment of the present invention, in which (a) is a diagram showing an example of a normal pattern, and (b) is a diagram showing an example of a white defect. , (c) is a diagram showing an example of film removal around a defect, (d) is a diagram showing an example of forming a first film, (e) is a diagram showing an example of forming a second film, (f) is a diagram showing light shielding Diagram of an example of sexual supplementary membrane formation. 3 is an explanatory diagram schematically showing the outline of the mask correction method in the third embodiment of the present invention, in which (a) is a diagram showing an example of a normal pattern, and (b) is a diagram showing an example of a white defect. , (c) is a diagram showing an example of film removal around a defect, (d) is a diagram showing an example of forming a first film, (e) is a diagram showing an example of forming a second film, (f) is a diagram showing light shielding Diagram of an example of sexual supplementary membrane formation. 4 is an explanatory diagram illustrating the optical characteristics of a correction film formed by the mask correction method of the present invention, and (a) shows the phase shift amount and transmittance when the first film as the phase shift control film is a single layer. (b) is a diagram showing a specific example of the relationship between the phase difference and the transmittance when the second film as the transmission control film is a single layer. (c) is a diagram showing a relationship between the first film and the second film. A diagram showing a specific example of the relationship between the phase shift amount and transmittance in a correction film (laminated film) in which 2 films are laminated.

1:Transparent substrate

2: Semi-transparent film

4: Correction film

4a: 1st membrane

4b: 2nd membrane

10: Pattern for transfer

11: Transparent part

12: Semi-transparent part

20:White defect

Claims (22)

A method of manufacturing a photomask having a pattern for transfer of a semitransparent portion formed by patterning a semitransparent film formed on a transparent substrate, wherein the semitransparent portion is Phase offset

is 160 degrees≦

≦200 degrees; the manufacturing method of the above-mentioned photomask includes: when a defect occurs in the above-mentioned semi-transparent part, the steps of identifying the above-mentioned defect to be corrected and determining a correction area to form a correction film to correct the above-mentioned defect; and in the above-mentioned step The correction film forming step of forming the correction film in the correction area; and in the correction film forming step, a first film and a second film are laminated in this order, and the first film has a transmittance higher than that of the semi-transmissive film, The second film has a transmittance for adjusting the transmittance of the correction film. The method of manufacturing a photomask according to claim 1, wherein the first film and the second film are different in composition or physical properties. The method for manufacturing a photomask according to claim 1 or 2, wherein the first film contains Cr and O, the second film contains Cr, O, and C, and the first film does not contain C, or contains a higher content than the second film A smaller amount of C, and the above-mentioned second film contains a smaller amount of O than that of the above-mentioned first film. For example, the manufacturing method of the photomask of claim 1 or 2, wherein The first film and the second film contain Cr, and the Cr content in the second film is greater than the Cr content in the first film. The method for manufacturing a photomask according to claim 1 or 2, wherein the first film contains Cr and O, and the total content of Cr and O contained in the first film is 80 atomic % of the components of the first film. above. The method of manufacturing a photomask according to claim 1 or 2, wherein the first film contains a material containing 5 to 45 atomic % Cr and 55 to 95 atomic % O, and the second film contains 20 to 70 atomic % % of Cr, 5 to 45 atomic % of O, and 10 to 60 atomic % of C. The manufacturing method of the photomask according to claim 1 or 2, wherein the transmittance Tm of the semi-transparent part to the light of the representative wavelength of the exposure light is Tm>25%. The method of manufacturing a photomask according to claim 1 or 2, wherein the transfer pattern includes a light-shielding portion that does not substantially transmit exposure light. The method of manufacturing a photomask according to claim 8, wherein the semi-transmissive portion is sandwiched by the light-shielding portion. The method of manufacturing a photomask according to Claim 1 or 2, which includes a subsequent step of adjusting the correction semi-transmission formed by forming the correction film by forming a supplementary film having light-shielding properties after the correction film formation step. The shape of the part. The method for manufacturing a photomask according to claim 1 or 2 further includes a pre-step, which step is to remove the defect or the film around the defect to expose the transparent substrate before the correction film forming step. A photomask having a transfer pattern including a semi-transmissive part formed by patterning a semi-transmissive film formed on a transparent substrate, the phase shift amount of the semi-transmissive part being

is 160 degrees≦

≦200 degrees, the mask includes a correction semi-transmissive part, the correction semi-transparent part is partially formed with a correction film containing a material different from the above-mentioned semi-transparent film, the above-mentioned correction film has a first film and a second film In the laminated films laminated in this order, the first film has a transmittance higher than that of the semi-transmissive film, and the second film has a transmittance for adjusting the transmittance of the correction film. The photomask of claim 12, wherein the first film and the second film are different in composition or physical properties. The photomask of claim 12 or 13, wherein the above-mentioned first film contains Cr and O, and the above-mentioned second film contains Cr, O and C, The first film does not contain C, or contains C in a smaller amount than the second film, and the second film contains O in a smaller amount than the first film. The photomask of claim 12 or 13, wherein the first film and the second film contain Cr, and the Cr content contained in the second film is greater than the Cr content contained in the first film. The photomask of claim 12 or 13, wherein the first film contains Cr and O, and the total content of Cr and O contained in the first film is more than 80 atomic % of the components of the first film. Such as the photomask of claim 12 or 13, wherein the above-mentioned first film contains a material containing 5 to 45 atomic % Cr and 55 to 95 atomic % O, and the above-mentioned second film contains 20 to 70 atomic % Cr. , 5~45 atomic % O, and 10~60 atomic % C materials. The photomask of claim 12 or 13, wherein the transmittance Tm of the above-mentioned semi-transparent part to the light of the representative wavelength of the exposure light is Tm>25%. The photomask according to claim 12 or 13, wherein the transfer pattern includes a light shielding portion that does not substantially transmit exposure light. The photomask according to claim 19, wherein the semi-transmissive portion is sandwiched by the light-shielding portion. The photomask of Claim 19, wherein the light-shielding portion is patterned by a light-shielding film formed on the transparent substrate, and a light-shielding property having a composition different from that of the light-shielding film is formed near the edge of the modified semi-transmissive portion. Supplementary film. A method of manufacturing an element for a display device, which includes: preparing a mask manufactured by the manufacturing method according to any one of claims 1 to 11, or preparing a light mask according to any one of claims 12 to 21 The mask step; and the transfer step, which involves exposing the above-mentioned photomask with an exposure device to transfer the above-mentioned transfer pattern to the transferred object.