TWI819446B - Single-layer semiconductor grinding tape and manufacturing method thereof - Google Patents

Abstract

A single-layer semiconductor grinding tape is provided, which includes a substrate and a polymer film. The polymer film is disposed on the substrate. The polymer film includes a polymer material. The polymer film is in softened state and has a first adhesive capacity when the temperature thereof is within a first temperature range. The polymer film is in hardened state and has a second adhesive capacity when the temperature thereof is within a second temperature range. The first temperature range is greater than the second temperature range and the first adhesive capacity is greater than the second adhesive capacity. The first temperature rang is 50˚C-80˚C and the second temperature range is 20˚C-25˚C; the first adhesive capacity is 400g/inch-800g/inch and the second adhesive capacity is 20g/inch-150g/inch.

Description

Single-layer semiconductor grinding tape and manufacturing method thereof

The present disclosure relates to a semiconductor polishing tape, particularly a single-layer semiconductor polishing tape. The present disclosure also relates to a manufacturing method of the semiconductor polishing tape.

Generally speaking, existing semiconductor polishing tapes have a multi-layer structure. The outer layer is an adhesive layer and the inner layer is a coating layer. Most of them are made by coating. Therefore, the manufacturing process of the existing semiconductor polishing tape is relatively complicated, so the cost is also high.

In addition, in the process of making abrasive tapes, concerns about poor flatness of thick films are often encountered. If abrasive tapes with poor flatness are used to attach to wafers for cutting, it will easily cause large wafer thickness errors, thereby affecting the quality of the wafers. efficacy.

In recent years, the thickness of the wafer has continued to decrease. The acceptable error range in the past has gradually lost its advantage in the process of decreasing the thickness of the body, and has become the key to affecting performance. Taking roll coating technology as an example, firstly, a roll of substrate (such as PP, PET, PI, copper foil, etc.) is coated on the substrate through a coating device, and then the solvent is transferred through the drying process. In addition, it is finally rolled into rolls, which are finished products or semi-finished products. During the coating process, it is difficult to control the flatness, resulting in slight thickness errors. In addition, when the solvent is removed during heat drying, ultraviolet light, or infrared light drying, the error caused during the original coating is also amplified.

According to an embodiment of the present disclosure, a single-layer semiconductor polishing tape is provided, which includes a base material and a polymer film. The polymer film is arranged on the base material, and the polymer film contains high molecular polymer material. Wherein, the polymer film is in a softened state and has a first degree of adhesion in the first temperature range, and the polymer film is in a hardened state and has a second degree of adhesion in the second temperature range, and the first temperature range is greater than the second temperature range. , and the first viscosity is greater than the second viscosity; wherein, the first temperature range is 50˚C~80˚C, the second temperature range is 20˚C~25˚C, and the first viscosity is 400g/ inch -800g/inch, while the second adhesion is 20g/inch -150g/inch.

Preferably, the second adhesion degree is 20g/inch-90g/inch.

According to another embodiment of the present disclosure, a method for manufacturing a single-layer semiconductor polishing tape is proposed, which is executed with a manufacturing system. The manufacturing system includes an extruder, a hanger-type film head and a leveling machine. The extruder includes an inlet, The body, the screw, the heater and the discharge port. The feed port and the discharge port are respectively set at both ends of the body. The screw is set inside the body, and the heater is connected to the body. The hanger-type film head extends gradually wider, and Connected to the discharge port of the extruder, the leveling machine is installed on one side of the hanger-type film head. The manufacturing method of the single-layer semiconductor grinding tape includes the following steps: mix the high molecular polymer materials to produce a mixture; put the mixture into the extruder The inlet of the extruder is used to heat and compress the mixture through the heater and screw of the extruder; the heated and compressed mixture is transported to the hanger-type membrane head through the outlet of the extruder; the mixture is extruded through the hanger-type membrane head. Forming a polymer film and laminating it to make the polymer film adhere to the base material; and leveling the polymer film attached to the base material through a leveling machine.

Based on the above, the single-layer semiconductor polishing tape and its manufacturing method according to the present invention may have one or more of the following advantages:

(1) In one embodiment of the present disclosure, the single-layer semiconductor polishing tape has a single-layer structure, so the base material can only have a single-layer polymer film. Therefore, the manufacturing process of the single-layer semiconductor polishing tape can be greatly simplified, so the manufacturing Costs can be further reduced.

(2) In one embodiment of the present disclosure, the polymer film used in the single-layer semiconductor polishing tape has a special composition ratio, so that the polymer film has different hardness and adhesion in different temperature ranges, so it can be provided at the same time Good cushioning and adhesion functions, and can be easily removed from the wafer

(3) In one embodiment of the present disclosure, the single-layer semiconductor polishing tape adopts a manufacturing method that can effectively make the thickness of the polymer film uniform and have better surface flatness, so it can meet the needs of the wafer polishing process. More widely used.

(4) In one embodiment of the present disclosure, the single-layer semiconductor polishing tape adopts a manufacturing method that can effectively reduce the manufacturing tolerance of the polymer film, so that the quality of the single-layer semiconductor polishing tape produced is better, so as to meet the practical application requirements. needs.

The following will describe embodiments of the single-layer semiconductor polishing tape and its manufacturing method according to the present disclosure with reference to the relevant drawings. For the sake of clarity and convenience of illustration, the size and proportion of each component in the drawings may be exaggerated. or presented in reduced form. In the following description and/or patent claims, when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present; and when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present; When a component is "directly connected" or "directly coupled" to another component, there are no intervening components present, and other words used to describe the relationship between components or layers should be interpreted in a like manner. To facilitate understanding, the same components in the following embodiments are labeled with the same symbols for description.

Please refer to Figure 1, which is a structural diagram of a single-layer semiconductor polishing tape according to an embodiment of the present disclosure. As shown in the figure, the single-layer semiconductor polishing tape 1 includes a base material 11 and a polymer film 12 .

In one embodiment, the base material 11 may be made of polyolefin (PO), polyvinyl chloride (PVC), polyethylene terephthalate (PET) or other materials.

The polymer film 12 is disposed on the base material 11 . The polymer film 12 includes a polymer material and an adhesion-imparting agent. In one embodiment, the high molecular polymer material may include styrene-isoprene-styrene thermoplastic block copolymer (SIS), styrene-butadiene-styrene thermoplastic block copolymer (SBS), One or a combination of polyethylene elastomer (POE), polyurethane (PU) and ethylene vinyl acetate copolymer (EVA). In one embodiment, the adhesion imparting agent may include one or a combination of rosin, petroleum resin, ethylene-vinyl acetate copolymer, and ethylene acrylic acid (EAA). For example, in this embodiment, the polymer material includes ethylene-vinyl acetate copolymer and polyethylene elastomer, and the adhesion-imparting agent is petroleum resin; the content of ethylene-vinyl acetate copolymer is 50%. -87%, the content of polyethylene elastomer is 10%-47%, and the content of petroleum resin is 3%-10%.

Preferably, in another embodiment of the present invention, the polymer film 12 may only include a polymer material and an adhesion-imparting agent, but not petroleum resin; wherein the polymer material includes ethylene-vinyl acetate copolymer. The content of the ethylene-vinyl acetate copolymer is 50%-87%, and the content of the polyolefin elastomer is 10%-50%.

The polymer film 12 is in a softened state and has a first degree of adhesion in the first temperature range, and is in a hardened state and has a second degree of adhesion in the second temperature range; the first temperature range is greater than the second temperature range, and the first The degree of adhesion is greater than the second degree of adhesion. For example, the first temperature range can be 50˚C~80˚C, the second temperature range can be 20˚C~25˚C (room temperature); the first adhesion can be 400g/inch-800g/inch, and the second temperature range can be 400g/inch-800g/inch. The second viscosity can be 10g/inch-150g/inch; preferably, the second viscosity is 20g/inch-150g/inch.

For example, in one embodiment, the polymer film 12 includes a polymer material and an adhesion imparting agent. The high molecular polymer material includes ethylene-vinyl acetate copolymer and polyolefin elastomer, and the adhesion imparting agent is petroleum resin. The content of ethylene-vinyl acetate copolymer is 80%, the content of polyethylene elastomer is 17%, and the content of petroleum resin is 3%. The first adhesiveness of the prepared polymer film 12 at 60˚C (the first temperature range) is 510g/inch, and the second adhesiveness at 25˚C (the second temperature range) can be 45g/inch.

For example, in another embodiment, the polymer film 12 includes a polymer material and an adhesion imparting agent. The high molecular polymer material includes ethylene-vinyl acetate copolymer and polyolefin elastomer, and the adhesion imparting agent is petroleum resin. The content of ethylene-vinyl acetate copolymer is 70%, the content of polyethylene elastomer is 30%, and the content of petroleum resin is 0%. The first viscosity of the polymer film 12 is 600g/inch at 60˚C (the first temperature range), and the second viscosity at 25˚C (the second temperature range) is 10g/inch.

For example, in yet another embodiment, the polymer film 12 includes a polymer material and an adhesion imparting agent. The high molecular polymer material includes ethylene-vinyl acetate copolymer and polyolefin elastomer, and the adhesion imparting agent is petroleum resin. The content of ethylene-vinyl acetate copolymer is 60%, the content of polyethylene elastomer is 33%, and the content of petroleum resin is 7%. The first adhesiveness of the prepared polymer film 12 at 60˚C (the first temperature range) is 450g/inch, and the second adhesiveness at 25˚C (the second temperature range) can be 100g/inch.

Therefore, the rheology of the polymer film 12 in the softened state in the first temperature range can provide sufficient thermal adhesion and good coverage of the uneven spots on the wafer, so that it can effectively provide buffering and adhesion. Function. In addition, at this time, the hardness of the polymer film 12 can be between 60 and 80 (SHELLA), so it is an elastomer with good elasticity and is very suitable for use as a grinding buffer material. On the contrary, when the polymer film 12 is in the second temperature range, it can return to a hardened state with low viscosity. In this state, the polymer film 12 can be easily removed from the wafer.

Of course, this embodiment is only for illustration and does not limit the scope of the present disclosure. Equivalent modifications or changes made according to the single-layer semiconductor polishing tape 1 of this embodiment should still be included in the patent scope of the present invention.

Please refer to Figures 2 and 3, which are first schematic diagrams and second schematic diagrams of a single-layer semiconductor polishing tape manufacturing system according to an embodiment of the present disclosure. As shown in the figure, the manufacturing system 2 includes an extruder 21 , a hanger-type film head 22 and a leveling machine 23 .

The extruder 21 includes an inlet 211, a body 212, a screw 213, a heater 214 and an outlet 215. The material inlet 211 and the material outlet 215 are respectively provided at two ends of the body 212. The screw 213 is arranged inside the body 212. The heater 214 is connected to the body 212 . The hanger-type membrane head 22 extends gradually wider, with a narrower end connected to the discharge port 215 of the extruder 21 and a wider end facing the leveling machine 23 . The leveling machine 23 is arranged on one side of the hanger type film head 22 .

First, the high molecular polymer material and the adhesion-imparting agent are mixed in the aforementioned ratio to produce a mixture. As mentioned above, for example, the high molecular polymer material may include ethylene-vinyl acetate copolymer and polyethylene elastomer, wherein the content of ethylene-vinyl acetate copolymer is 50%-87%, and the content of polyethylene elastomer The content of petroleum resin is 10%-47%, while the content of petroleum resin is 3%-10%.

Preferably, in another embodiment of the present invention, no adhesion-imparting agent may be added; wherein the polymer material includes ethylene-vinyl acetate copolymer and polyolefin elastomer, and the content of ethylene-vinyl acetate copolymer is It is 50%-87%, and the content of the polyethylene elastomer is 10%-50%.

Then, the mixture is put into the inlet 211 of the extruder 21, and the screw 213 of the extruder 21 rotates to compress the mixture; in addition, the heater 214 of the extruder 21 heats while compressing.

Then, after completing the compression and heating, the mixture is transported to the hanger-type film head 22 through the discharge port 215 of the extruder 21, and the mixture is extruded through the hanger-type film head 22 to form the polymer film 12, and is laminated to make the polymer film 12. Membrane 12 is attached to substrate 11 .

Finally, the base material 11 with the polymer film 12 attached is transported to the leveler 23 and leveled by the leveler 23 .

In another embodiment of the present invention, after the hanger-type film head 22 extrudes the mixture to form the polymer film 12, the film thickness of the polymer film 12 is detected by the thickness detection device, and the thickness of the polymer film 12 is immediately fed back to the single-layer semiconductor polishing tape. The manufacturing system can adjust the gap of the hanger-type film head 22 in real time, which can further achieve uniform film thickness and reduce tolerances. Among them, the thickness detection device can be a traditional probe device or an infrared detection device. The film thickness measurement method can be single-point or multi-point detection, or repeated scanning can be performed parallel to the exit direction of the hanger-type film head 22, but is not limited to this.

As can be seen from the above, this embodiment adopts a special manufacturing system, which integrates the extruder 21, the hanger-type film head 22 and the leveling machine 23, and uses a special process to produce the single-layer semiconductor polishing tape 1 without the need for coating. step, so the thickness of the polymer film 12 of the single-layer semiconductor polishing tape 1 is uniform (the thickness of the polymer film is about 40um-500um) and has better surface flatness, and can greatly reduce the thickness of the polymer film 12 Manufacturing tolerance (less than ±5um).

Of course, this embodiment is only for illustration and does not limit the scope of the present disclosure. Equivalent modifications or changes made according to the manufacturing system of the single-layer semiconductor polishing tape 1 of this embodiment should still be included in the patent scope of the present invention. .

It is worth mentioning that existing semiconductor polishing tapes have a multi-layer structure, with the outer layer being an adhesive layer and the inner layer being a coating layer. Most of them are made by coating. Therefore, the manufacturing process of the existing semiconductor polishing tape is relatively complicated, so the cost is also high. On the contrary, according to the embodiments of the present disclosure, the single-layer semiconductor polishing tape has a single-layer structure, so the base material can only have a single layer of polymer film. Therefore, the manufacturing process of the single-layer semiconductor polishing tape can be greatly simplified, so the manufacturing cost is reduced. can be further reduced.

In addition, according to embodiments of the present disclosure, the polymer film used in the single-layer semiconductor polishing tape has a special composition ratio, so that the polymer film has different hardness and adhesion in different temperature ranges, so it can provide good It has buffering function and adhesive function, and can be easily removed from the wafer.

In addition, existing processes for making abrasive tapes often encounter concerns about poor flatness of thick films. If abrasive tapes with poor flatness are used to attach to wafers for cutting, it will easily cause large wafer thickness errors, thereby affecting the performance of the wafers. On the contrary, according to the embodiments of the present disclosure, the single-layer semiconductor polishing tape adopts a manufacturing method that can effectively make the thickness of the polymer film uniform and have better surface flatness, so it can meet the needs of the wafer polishing process. Application more widely.

In addition, the existing process for making abrasive tape requires a coating step, so it is easy to create large tolerances. On the contrary, according to the embodiments of the present disclosure, the manufacturing method adopted by the single-layer semiconductor polishing tape can effectively reduce the manufacturing tolerance of the polymer film, so that the quality of the single-layer semiconductor polishing tape produced is better, so as to meet the requirements of practical applications. need.

Please refer to FIG. 4 , which is a flow chart of a manufacturing method of a single-layer semiconductor polishing tape according to an embodiment of the present disclosure. As shown in the figure, the manufacturing method of the single-layer semiconductor polishing tape of this embodiment includes the following steps:

Step S41: Mix high molecular polymer materials to produce a mixture. In this step, the high molecular polymer material and the adhesion imparting agent are mixed in a specific ratio to produce a mixture, which can achieve appropriate properties after processing for application in semiconductor polishing tape.

Step S42: Place the mixture into the inlet of the extruder, and heat and compress the mixture through the heater and screw of the extruder. In this step, the mixture is placed into the inlet 211 of the extruder 21; at the same time, the screw 213 of the extruder 21 rotates to compress the mixture; in addition, the heater 214 of the extruder 21 heats while compressing.

Step S43: Transport the heated and compressed mixture to the hanger-type film head through the discharge port of the extruder. In this step, the compressed and heated mixture is transported to the hanger-type film head 22 through the discharge port 215 of the extruder 21 .

Step S44: Extrude the mixture through a hanger-type film head to form a polymer film, and laminate the polymer film to adhere to the substrate. In this step, the compressed and heated mixture is extruded through a hanger-type film head 22 with a gradually widening extension structure to form a polymer film 12, and then a laminating step is performed to attach the polymer film 12 to the substrate 11 .

Step S45: Use a leveling machine to level the polymer film attached to the base material. In this step, a leveling machine 23 is used to level the polymer film 12 on the base material 11 to ensure that the polymer film has a uniform thickness and high surface flatness.

Of course, this embodiment is only for illustration and does not limit the scope of the present disclosure. Equivalent modifications or changes based on the manufacturing method of the single-layer semiconductor polishing tape of this embodiment should still be included in the patent scope of the present invention.

Although the steps of the methods described in this disclosure are shown and described in a specific order, the order of operations of each method may be changed, some steps may be performed in reverse order, or some steps may be performed concurrently with other steps. In another embodiment, the different steps may be performed in an intermittent and/or alternating manner.

In summary, according to the embodiments of the present disclosure, the single-layer semiconductor polishing tape has a single-layer structure, so the base material can only have a single layer of polymer film. Therefore, the manufacturing process of the single-layer semiconductor polishing tape can be greatly simplified. Manufacturing costs can be further reduced.

In addition, according to embodiments of the present disclosure, the polymer film used in the single-layer semiconductor polishing tape has a special composition ratio, so that the polymer film has different hardness and adhesion in different temperature ranges, so it can provide good It has buffering function and adhesive function, and can be easily removed from the wafer.

In addition, according to embodiments of the present disclosure, the single-layer semiconductor polishing tape adopts a manufacturing method that can effectively make the thickness of the polymer film uniform and have better surface flatness, so it can meet the needs of the wafer polishing process. More extensive.

In addition, according to embodiments of the present disclosure, the manufacturing method used for the single-layer semiconductor polishing tape can effectively reduce the manufacturing tolerance of the polymer film, so that the quality of the single-layer semiconductor polishing tape produced is better, so as to meet the needs of practical applications. .

It can be seen that this disclosure has indeed achieved the desired improvement effect by breaking through the previous technology, and it is not easily imagined by those familiar with the technology. Its progress and practicality clearly meet the requirements for patent application. I have filed a patent application in accordance with the law, and I sincerely request your office to approve this application for an invention patent to encourage creation, and I would like to express my gratitude to you.

The above is only illustrative and not restrictive. Any other equivalent modifications or changes that do not depart from the spirit and scope of this disclosure should be included in the appended patent application scope.

1:Single layer semiconductor polishing tape 11:Substrate 12:Polymer membrane 2: Manufacturing system 21:Extrusion machine 211:Inlet port 212:Ontology 213:Screw 214:Heater 215: Discharge port 22: Hanger type membrane head 23: Leveling machine S41-S45: step process

Figure 1 is a structural diagram of a single-layer semiconductor polishing tape according to an embodiment of the present disclosure. Figure 2 is a first schematic diagram of a manufacturing system for a single-layer semiconductor polishing tape according to an embodiment of the present disclosure. Figure 3 is a second schematic diagram of a manufacturing system for a single-layer semiconductor polishing tape according to an embodiment of the present disclosure. FIG. 4 is a flow chart of a manufacturing method of a single-layer semiconductor polishing tape according to an embodiment of the present disclosure.

1:Single layer semiconductor polishing tape

11:Substrate

12:Polymer membrane

Claims (10)

A single-layer semiconductor grinding tape containing: a base material; and A polymer film is provided on the base material, the polymer film includes a high molecular polymer material; Wherein, the polymer film is in a softened state and has a first adhesiveness in a first temperature range, and the polymer film is in a hardened state and has a second adhesiveness in a second temperature range, and the first The temperature range is greater than the second temperature range, and the first viscosity is greater than the second viscosity; wherein, the first temperature range is 50˚C~80˚C, and the second temperature range is 20˚C~25˚ C. The first viscosity is 400g/inch-800g/inch, and the second viscosity is 20g/inch-150g/inch. The single-layer semiconductor polishing tape as described in claim 1, wherein the polymer material is a styrene-isoprene-styrene thermoplastic block copolymer, a styrene-butadiene-styrene thermoplastic block copolymer. One of a segmented copolymer, a polyolefin elastomer, a polyurethane or an ethylene-vinyl acetate copolymer, or a combination thereof. The single-layer semiconductor polishing tape of claim 1, wherein the polymer film further includes an adhesion-imparting agent, and the adhesion-imparting agent is a rosin, a petroleum resin, an ethylene-vinyl acetate copolymer or an ethylene acrylic acid ( EAA) or a combination thereof. The single-layer semiconductor polishing tape of claim 1, wherein the polymer material includes an ethylene-vinyl acetate copolymer and a polyethylene elastomer, and the content of the ethylene-vinyl acetate copolymer is 50%- 87%, while the polyethylene elastomer content is 10%-50%. The single-layer semiconductor polishing tape of claim 1, wherein the polymer film further includes an adhesion imparting agent, the polymer material includes an ethylene-vinyl acetate copolymer and a polyethylene elastomer, and the adhesion The imparting agent is a petroleum resin, the content of the ethylene-vinyl acetate copolymer is 50%-87%, the content of the polyolefin elastomer is 10%-47%, and the content of the petroleum resin is 3%-10%. A method for manufacturing a single-layer semiconductor grinding tape is executed with a manufacturing system. The manufacturing system includes an extruder, a hanger-type film head and a leveling machine. The extruder includes an inlet, a body, and a screw. , a heater and a discharge port, the feed port and the discharge port are respectively provided at two ends of the body, the screw is provided inside the body, and the heater is connected to the body, the clothes hanger type film The head extends gradually wider and is connected to the discharge port of the extruder. The leveling machine is arranged on one side of the hanger-type film head. The manufacturing method of the single-layer semiconductor grinding tape includes the following steps: Mixing a high molecular polymer material to produce a mixture; Put the mixture into the inlet of the extruder, and heat and compress the mixture through the heater and the screw of the extruder; The heated and compressed mixture is transported to the hanger-type film head through the discharge port of the extruder; Extruding the mixture through the hanger-type film head to form a polymer film as described in any one of claims 1 to 5, and laminating the film to adhere the polymer film to a substrate; The polymer film attached to the base material is leveled by the leveling machine. The manufacturing method of a single-layer semiconductor polishing tape as described in claim 6, wherein the polymer material is a styrene-isoprene-styrene thermoplastic block copolymer, a styrene-butadiene-benzene One of an ethylene thermoplastic block copolymer, a polyolefin elastomer, a polyurethane or an ethylene-vinyl acetate copolymer, or a combination thereof. The manufacturing method of a single-layer semiconductor polishing tape as described in claim 6, wherein the high molecular polymer material is mixed with an adhesion-imparting agent to produce the mixture, and the adhesion-imparting agent is a rosin, a petroleum resin, and an ethylene-acetic acid One of vinyl ester copolymer or monoethylene acrylic acid or a combination thereof. The manufacturing method of a single-layer semiconductor polishing tape as described in claim 6, wherein the polymer material includes an ethylene-vinyl acetate copolymer and a polyolefin elastomer, and the content of the ethylene-vinyl acetate copolymer is 50%-87%, the content of the polyethylene elastomer is 10%-50%. The manufacturing method of a single-layer semiconductor polishing tape as described in claim 6, wherein the high molecular polymer material is mixed with an adhesion imparting agent to produce the mixture, and the high molecular polymer material includes an ethylene-vinyl acetate copolymer and A polyolefin elastomer, the content of the ethylene-vinyl acetate copolymer is 50%-87%, the content of the polyolefin elastomer is 10%-47%, and the content of the petroleum resin is 3%-10%.

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