TWI819284B - Method and apparatus for cutting substrate - Google Patents

Abstract

A method and an apparatus for cutting a substrate including a first adhesive disposed on a first surface of a substrate material formed with a light-emitting chip, and a first film attached to the first adhesive; when a portion of the light-emitting chip with an electrode thereon is defined as a first portion, and another portion of the light-emitting chip adjacent to the first portion is defined as a second portion, the method includes: a step of irradiating a first laser beam along a first processing line extending between the first portion and the second portion, a second processing line extending outside of the light-emitting chip adjacent to the second portion, a third processing line extending outside of the light-emitting chip adjacent to the first portion to remove the first film and the first adhesive so as to form a first groove, a second groove, a third groove, respectively.

Description

Substrate cutting method and substrate cutting device

The present invention relates to a substrate cutting method and a substrate cutting device for cutting a substrate on which a light-emitting element wafer having an electrode is formed.

Generally speaking, light-emitting diodes such as light-emitting diodes (LEDs) or organic light-emitting diodes (OLEDs) are packaged using light-emitting element wafers. For this purpose, a plurality of light-emitting element wafers are formed on a substrate (wafer) through a semiconductor manufacturing process. Furthermore, the substrate is cut in a substrate cutting step to obtain a plurality of light emitting element wafers.

Regarding the technology of cutting a substrate, Patent Document 1 (Korean Patent Publication No. 10-2013-0078457) proposes a technology of using a laser beam to cut a substrate on which a plurality of light-emitting element wafers having electrodes (electrode pads) are formed. According to Patent Document 1, a first film (first tape) and a second film (second tape) are respectively attached to the upper and lower parts of the substrate. The first film and the second film are separated from the light-emitting element wafers and removed after the substrate is cut into the light-emitting element wafers.

In Patent Document 1, the adhesive between the upper part of the substrate and the first film (the first adhesive) and the adhesive between the lower part of the substrate and the second film (the second adhesive) are not considered. , simply irradiating a laser beam onto the substrate to cut the substrate. However, when the substrate is irradiated with a laser beam, the first adhesive and the second adhesive are denatured. In this case, since the first adhesive and the second adhesive are denatured, the first film and the second film will be fixedly attached to the light-emitting element wafer, so it is difficult to separate the first film and the second film from the light-emitting element wafer. Remove the problem.

Prior technical literature patent documents Patent Document 1: Korean Patent Publication No. 10-2013-0078457.

(Problem to be solved by the invention)

An object of the present invention is to provide a substrate cutting method and a substrate cutting device that can minimize the area where the adhesive is denatured by irradiation with a laser beam, thereby enabling the thin film to be easily separated and removed from the light-emitting element wafer.

(Measures taken to solve the problem)

A substrate cutting method according to an embodiment of the present invention aimed at achieving the above objectives is used for cutting a substrate, which includes: a light-emitting element wafer including an electrode; a base material on which the light-emitting element wafer is formed; a first adhesive, It is arranged on the first side of the base material on which the light-emitting element chip is formed; the second adhesive is arranged on the second side of the base material opposite to the first side of the base material; the first film is attached to the first adhesive agent; and a second film attached to the second adhesive, when the part of the light-emitting element wafer where the electrode is located is called the first part, and the other part of the light-emitting element wafer adjacent to the first part is called the second part, When the direction in which the first part and the second part are sequentially positioned is called the Y-axis direction, and the direction orthogonal to the Y-axis direction is called the X-axis direction, the substrate cutting method may include: along the first processing line, the second The processing line and the third processing line irradiate the first laser beam to remove the first film and the first adhesive along the first processing line, the second processing line and the third processing line, thereby forming the first groove and the second groove respectively. and the step of a third groove, wherein the first processing line extends along the X-axis direction between the first part and the second part, and the second processing line extends along the periphery of the light-emitting element wafer at a position adjacent to the second part. Extending in the X-axis direction, the third processing line extends along the X-axis direction at a position adjacent to the first part on the periphery of the light-emitting element chip; the scribing wheel is passed through the second groove to pressurize the base material, so that the base material is The step of forming the wheel scribing line; and the step of irradiating the second laser beam through the third groove to the base material to form the laser scribing line on the base material, respectively by forming the second groove and the third groove. The exposed portions of the base material of the second groove and the third groove formed in the step may be configured as a plane.

In the step of forming the second groove, the width of the first laser beam irradiated to the bottom surface portion of the second groove may be greater than the thickness of the tip of the dicing wheel.

At a position in the Z-axis direction that is the same distance from the base material, the width of the first laser beam may be greater than the width of the second laser beam.

The width of the second groove at the predetermined depth of the second groove may be greater than the thickness of the tip of the scribing wheel.

The first laser beam may be irradiated obliquely downward in a direction away from the light emitting element wafer.

The second laser beam may be irradiated obliquely downward in a direction close to the light emitting element wafer.

The substrate cutting method according to the embodiment of the present invention may further include: irradiating the first laser beam along the fourth processing line and the fifth processing line to remove the first film and the first laser beam along the fourth processing line and the fifth processing line. adhesive, thereby forming the steps of fourth grooves and fifth grooves respectively, wherein the fourth processing line and the fifth processing line extend in the Y-axis direction along the periphery of the light-emitting element wafer; and passing the scribing wheel through the fourth The groove and the fifth groove are used to pressurize the base material, thereby forming a wheel scribing line on the base material.

The substrate cutting method according to the embodiment of the present invention further includes: the steps of inverting the substrate; and irradiating the first laser beam along the sixth and seventh processing lines to remove the second laser beam along the sixth and seventh processing lines. The second film and the second adhesive are used to form sixth grooves and seventh grooves respectively, wherein the sixth processing line and the seventh processing line extend in the X-axis direction along the periphery of the light-emitting element wafer.

The substrate cutting method according to the embodiment of the present invention may further include: the steps of inverting the substrate; and irradiating the first laser beam along the eighth and ninth processing lines to remove along the eighth and ninth processing lines. The second film and the second adhesive are used to form the eighth groove and the ninth groove respectively, wherein the eighth processing line and the ninth processing line extend in the Y-axis direction along the periphery of the light-emitting element wafer.

A substrate cutting device according to an embodiment of the present invention intended to achieve the above objects may be configured to be movable along the surface of the substrate and include a head unit including a dicing wheel, a first laser irradiation module and a second The laser irradiation module is configured to perform a substrate cutting method to cut the substrate.

(effect of invention)

Using the substrate cutting method and substrate cutting device according to the present invention, a laser beam and a dicing wheel can be used together to cut the substrate. Therefore, the area where the adhesive is denatured by irradiation with the laser beam can be minimized, and the thin film can be easily separated and removed from the light-emitting element wafer.

In addition, with the substrate cutting method and substrate cutting device according to the present invention, at least a laser beam is used in the process of cutting a portion of the portion constituting the light-emitting element wafer adjacent to the electrode that is weak against external impact, and the used The type of laser beam is different from the type of laser beam used to remove films and adhesives. Therefore, it is possible to prevent the portion adjacent to the electrode from being damaged due to external force.

Hereinafter, a substrate cutting method and a substrate cutting device according to one embodiment of the present invention will be described with reference to the accompanying drawings.

First, the light-emitting element wafer 10 (refer to FIGS. 13 and 19 ) obtained by cutting the substrate S (refer to FIGS. 4 and 14 ) using a substrate cutting method and a substrate cutting device according to an embodiment of the present invention includes a base material 11, a semiconductor layer 12 and electrode 13.

The semiconductor layer 12 is formed on the base material 11 . For example, the semiconductor layer 12 may include a first nitride layer 121, an active layer 123, and a second nitride layer 122 sequentially stacked on the base material 11. The active layer 123 is sandwiched between the first nitride layer 121 and the second nitride layer 122 . For example, the first nitride layer 121 and the second nitride layer 122 may be doped with mutually different impurities among p-type impurities and n-type impurities. The active layer 123 may have multiple quantum well layer structures.

The electrode 13 is formed on the semiconductor layer 12 . For example, the electrode 13 may be a p-type electrode. The electrode 13 serves to connect the semiconductor layer 12 with an external circuit.

However, the present invention is not limited to the light emitting element wafer 10 having the above structure. The present invention can be applied to a process of manufacturing light-emitting element wafers 10 having various shapes. That is, although the structure of the light-emitting element wafer 10 having a vertical electrode structure is disclosed in FIGS. 13 and 19 , the present invention is not limited to the light-emitting element wafer having a vertical electrode structure. For example, the present invention can be applied to a light-emitting element wafer having a horizontal electrode structure. When the present invention is applied to a light-emitting element wafer having a horizontal electrode structure, the light-emitting element wafer may include a p-type electrode and an n-type electrode. In this case, the electrode portion of the light-emitting element wafer may be composed of a p-type electrode and an n-type electrode.

In addition, the substrate cutting method and substrate cutting device according to one embodiment of the present invention are not limited to manufacturing light-emitting diodes (LEDs) as the light-emitting element wafer 10, and can also be applied to manufacturing organic light-emitting diodes (LEDs). OLED).

As shown in FIGS. 1 and 2 , the substrate S to be cut by the substrate cutting method and substrate cutting device according to one embodiment of the present invention may be provided in the form of a wafer in which a plurality of light emitting element wafers 10 are formed. . However, the present invention is not limited to the substrate S in the form of a wafer. The present invention can also be applied to the process of cutting the substrate S having various shapes.

Hereinafter, the part of the light-emitting element wafer 10 where the electrode 13 is located is called the first part 19 (see FIGS. 1 , 2 , and 13 ), and the other part of the light-emitting element wafer adjacent to the first part 19 is called the second part. 18 (refer to Figure 1, Figure 2, Figure 13). That is, the first portion 19 may include the electrode 13 . Furthermore, the second portion 18 may not include the electrode 13 .

The substrate cutting method and substrate cutting device according to one embodiment of the present invention function to cut the substrate S along the periphery of the first part 19 and the second part 18 . In addition, the substrate cutting method and the substrate cutting device according to one embodiment of the present invention function to remove the film and the adhesive layer along the boundary between the first part 19 and the second part 18 .

Hereinafter, the direction in which the first part 19 and the second part 18 are arranged in sequence is defined as the Y-axis direction, and the direction orthogonal to the Y-axis direction is defined as the X-axis direction. Furthermore, the direction perpendicular to the X-Y plane is defined as the Z-axis direction. Furthermore, two surfaces of the substrate S that face each other in the Z-axis direction are defined as a first surface S1 and a second surface S2. Here, the first surface S1 of the substrate S is located in the direction in which the light emitting element chip 10 is formed with the base material 11 as a reference.

As shown in FIGS. 1 and 2 , for the first surface S1 of the substrate S, a processing line 21 is set along the boundary between the first part 19 and the second part 18 . In addition, a plurality of processing lines 22, 23, 24, 25, 26, 27, 28, 29 are set along the periphery of the first part 19 and the second part 18. One processing line 21 is referred to as a first processing line 21 . The plurality of processing lines 22, 23, 24, 25, 26, 27, 28, 29 include a second processing line 22, a third processing line 23, a fourth processing line 24 and a fifth processing line set for the first surface S1 of the substrate S. Processing line 25. In addition, the plurality of processing lines 22, 23, 24, 25, 26, 27, 28, and 29 include a sixth processing line 26, a seventh processing line 27, an eighth processing line 28 set for the second surface S2 of the substrate S, and Ninth processing line 29.

On the other hand, each predetermined process can be sequentially executed for the plurality of processing lines 21, 22, 23, 24, 25, 26, 27, 28, and 29. In addition, some of the predetermined processes can be executed simultaneously on some of the plurality of process lines 21, 22, 23, 24, 25, 26, 27, 28, and 29. In addition, the predetermined process performed on the substrate S may include a process of inverting the front and rear surfaces of the substrate S. In addition, the predetermined process performed on the substrate S may include a process of rotating the substrate S around an axis parallel to the Z-axis direction. Since the substrate S rotates about an axis parallel to the Z-axis direction, predetermined processing can be performed on the substrate S in the X-axis direction and the Y-axis direction.

On the other hand, the order in which these processes are performed is not limited to the order of the plurality of processing lines 21, 22, 23, 24, 25, 26, 27, 28, and 29.

The first processing line 21 extends in the X-axis direction along the boundary between the first part 19 and the second part 18 .

The second processing line 22 extends along the X-axis direction adjacent to the second portion 18 . The third processing line 23 extends along the X-axis direction adjacent to the first portion 19 . The second processing line 22 and the third processing line 23 are parallel to each other and extend in the X-axis direction along the periphery of the light emitting element wafer 10 .

The fourth processing line 24 and the fifth processing line 25 are parallel to each other and extend in the Y-axis direction along the periphery of the light emitting element wafer 10 .

The sixth processing line 26 and the seventh processing line 27 are parallel to each other and extend in the X-axis direction along the periphery of the light emitting element wafer 10 .

The eighth processing line 28 and the ninth processing line 29 are parallel to each other and extend in the Y-axis direction along the periphery of the light emitting element wafer 10 .

The substrate S can be divided into a plurality of light emitting element wafers 10 by performing predetermined processing along the plurality of processing lines 21, 22, 23, 24, 25, 26, 27, 28, and 29 set as above.

As shown in FIGS. 4 and 14 , the substrate S provided with the light-emitting element chip 10 includes a base material 11 , a first adhesive 14 , a second adhesive 15 , a first film 16 and a second film 17 .

The light-emitting element wafer 10 is provided on the base material 11 . For example, the base material 11 may be formed of polyimide (PI).

The first adhesive 14 is coated on the first surface of the base material 11 provided with the light emitting element chip 10 . The second adhesive 15 is coated on the second side opposite to the first side of the base material 11 . The first adhesive 14 and the second adhesive 15 may be formed of the same material. However, the present invention is not limited to this, and the present invention is also applicable to a configuration in which the first adhesive 14 and the second adhesive 15 are made of different materials.

The first film 16 is attached to the first surface S1 of the substrate S through the first adhesive 14 . The second film 17 is attached to the second surface S2 of the substrate S through the second adhesive 15 . The first film 16 and the second film 17 play a role of protecting the substrate S during processing of the substrate S and/or during transportation of the substrate S. For example, the first film 16 and the second film 17 may be formed of polyethylene terephthalate (PET). After the substrate cutting process of cutting the substrate S is performed, the first film 16 and the second film 17 may be removed from the substrate S together with the first adhesive 14 and the second adhesive 15 . It is especially important that the first film 16 and the second film 17 are removed from the light emitting element wafer 10 together with the first adhesive 14 and the second adhesive 15 .

As shown in FIG. 3 , a substrate cutting device according to an embodiment of the present invention includes a stage 71 , a stage lifting unit 72 , a stage rotating unit 73 , a frame 74 , a first head unit 75 and a third head unit 75 . Two-head unit 76.

The stage 71 is used to mount and support the substrate S. The stage lifting unit 72 functions to raise and lower the stage 71 . The stage rotation unit 73 functions to rotate the stage 71 about an axis parallel to the Z-axis direction.

The frame 74 may extend in a direction parallel to the upper surface of the stage 71 . For example, frame 74 may extend in the X-axis direction or the Y-axis direction.

The first head unit 75 and the second head unit 76 are movable along the frame 74 .

The first head unit 75 includes a dicing wheel 51 and a first laser irradiation module 40 . The second head unit 76 includes the second laser irradiation module 60 .

The first head unit 75 and the second head unit 76 may be separated from each other. Therefore, the first head unit 75 and the second head unit 76 can be moved individually relative to each other.

According to this configuration, the dicing wheel 51 and the first laser irradiation module 40 can move together. The dicing wheel 51 and the first laser irradiation module 40 can move independently relative to the second laser irradiation module 60 . Likewise, the second laser irradiation module 60 can move independently relative to the scribing wheel 51 and the first laser irradiation module 40 . Since the dicing wheel 51 and the second laser irradiation module 60 can move independently relative to each other, the process of using the dicing wheel 51 and the process of using the second laser irradiation module 60 can be performed simultaneously. Therefore, the time required for the process of cutting the substrate S can be reduced.

The first laser irradiation module 40 can irradiate the first laser beam 41 for removing the first adhesive 14, the second adhesive 15, the first film 16 and the second film 17 (refer to FIGS. 5 to 7, FIG. 11, Figure 15, Figure 18). For example, the first laser beam 41 may be a _CO2 laser beam.

The second laser irradiation module 60 can irradiate the second laser beam 61 for forming the laser scribing line 611 in the base material 11 (refer to FIG. 9 ). For example, the second laser beam 61 may be a UV laser beam.

In this way, when cutting the multi-layer substrate S including the base material 11, the first adhesive 14, the second adhesive 15, the first film 16 and the second film 17, the first laser beam 41, the dicing wheel 51, The second laser beam 61 is appropriately selected and used for each layer. Therefore, the substrate S can be cut more smoothly and efficiently.

In addition, in order to cut the substrate S, not only one laser beam is used, but the dicing wheel 51 is also used. Therefore, compared with the case of using only one type of laser beam, the area where the first adhesive 14 and the second adhesive 15 are denatured by irradiation with the laser beam can be minimized. Therefore, it is possible to prevent the first film 16 and the second film 17 from being fixedly attached to the substrate S due to the degeneration of the first adhesive 14 and the second adhesive 15 . Therefore, the first film 16 and the second film 17 can be easily removed.

Hereinafter, a substrate cutting method according to an embodiment of the present invention will be described with reference to FIGS. 4 to 19 .

First, a method of processing the first surface S1 and the second surface S2 of the substrate S along the X-axis direction will be described with reference to FIGS. 4 to 13 .

First, as shown in FIG. 5 , the first laser beam 41 is irradiated along the first processing line 21 to remove the first film 16 and the first adhesive 14 along the first processing line 21 , thereby forming the first groove 31 .

In addition, as shown in FIG. 6 , the first laser beam 41 is irradiated along the second processing line 22 to remove the first film 16 and the first adhesive 14 along the second processing line 22 , thereby forming the second groove 32 .

Here, it is preferable to irradiate the first laser beam 41 so that the part A of the base material 11 can be exposed through the second groove 32 . Furthermore, the part A of the base material 11 exposed via the second groove 32 is preferably configured as a plane.

Furthermore, as shown in FIG. 7 , the first laser beam 41 is irradiated along the third processing line 23 to remove the first film 16 and the first adhesive 14 along the third processing line 23 , thereby forming the third groove 33 .

Here, it is preferable to irradiate the first laser beam 41 so that the part A of the base material 11 can be exposed through the third groove 33 . Furthermore, it is preferable that the part A of the base material 11 exposed by the third groove 33 is configured as a flat surface.

Furthermore, as shown in FIG. 8 , the scribing wheel 51 is inserted through the second groove 32 and pressurizes the base material 11 , thereby forming a wheel scribing line 511 on the base material 11 . The dicing wheel 51 moves in the X-axis direction while pressing the base material 11 .

At this time, since the part A of the base material 11 exposed through the second groove 32 is configured as a flat surface, the dicing wheel 51 can directly contact the part A of the base material 11 . That is, the dicing wheel 51 can directly contact the exposed portion of the base material 11 without interfering with the first adhesive 14 .

For this reason, in the step of forming the second groove 32 , the width WL1 (refer to FIG. 12 ) of the first laser beam 41 reaching the bottom surface portion of the second groove 32 (ie, the portion where the base material 11 is exposed) is larger than that of the dicing wheel. The thickness of the tip (blade part) of 51. Therefore, as shown in FIG. 8 , the width WG of the second groove 32 at the preset depth of the second groove 32 is greater than the thickness WW of the scribing wheel 51 at the depth.

Therefore, the tip of the dicing wheel 51 does not directly contact the first adhesive 14 . Therefore, problems that may occur due to the contact between the tip of the dicing wheel 51 and the first adhesive 14 can be prevented. For example, contamination of the dicing wheel 51 that may occur due to the first adhesive 14 adhering to the tip of the dicing wheel 51 can be prevented. In addition, it is possible to prevent the cutting force of the dicing wheel 51 from being reduced due to the first adhesive 14 adhering to the tip of the dicing wheel 51 .

On the other hand, in order to prevent the first adhesive 14 or the second adhesive 15 from adhering to the dicing wheel 51 (here, in the case of the second adhesive 15, refer to the process illustrated in FIG. 16 ), it is preferable to appropriately Set the speed of the dicing wheel 51.

For example, when the outer diameter of the dicing wheel 51 is 2 mm and the traveling speed (moving speed) of the dicing wheel 51 is 30 mm/s, the rotation speed of the dicing wheel 51 is preferably 4.8 rps or more and 9.6 rps or less. . When the rotation speed of the dicing wheel 51 is less than 4.8 rps, the problem that the first adhesive 14 or the second adhesive 15 adheres to the dicing wheel 51 may occur.

In addition, when the outer diameter of the dicing wheel 51 is 2 mm and the traveling speed (moving speed) of the dicing wheel 51 is 300 mm/s, the rotation speed of the dicing wheel 51 is preferably 47.7 rps or more and 95.4 rps or less. . When the rotation speed of the dicing wheel 51 is less than 47.7 rps, the problem that the first adhesive 14 or the second adhesive 15 adheres to the dicing wheel 51 may occur.

In addition, when the outer diameter of the dicing wheel 51 is 2 mm and the traveling speed (moving speed) of the dicing wheel 51 is 500 mm/s, the rotation speed of the dicing wheel 51 is preferably 79.6 rps or more and 159.2 rps or less. . When the rotation speed of the dicing wheel 51 is less than 79.6 rps, the problem that the first adhesive 14 or the second adhesive 15 adheres to the dicing wheel 51 may occur.

In addition, when the outer diameter of the dicing wheel 51 is 3 mm and the traveling speed (moving speed) of the dicing wheel 51 is 30 mm/s, the rotation speed of the dicing wheel 51 is preferably 3.2 rps or more and 6.4 rps or less. . When the rotation speed of the dicing wheel 51 is less than 3.2 rps, the problem that the first adhesive 14 or the second adhesive 15 adheres to the dicing wheel 51 may occur.

In addition, when the outer diameter of the dicing wheel 51 is 3 mm and the traveling speed (moving speed) of the dicing wheel 51 is 300 mm/s, the rotation speed of the dicing wheel 51 is preferably 31.8 rps or more and 63.6 rps or less. . When the rotation speed of the dicing wheel 51 is less than 31.8 rps, the problem that the first adhesive 14 or the second adhesive 15 adheres to the dicing wheel 51 may occur.

In addition, when the outer diameter of the dicing wheel 51 is 3 mm and the traveling speed (moving speed) of the dicing wheel 51 is 500 mm/s, the rotation speed of the dicing wheel 51 is preferably 53.1 rps or more and 106.2 rps or less. . When the rotation speed of the dicing wheel 51 is less than 53.1 rps, the problem that the first adhesive 14 or the second adhesive 15 adheres to the dicing wheel 51 may occur.

Next, as shown in FIG. 9 , the second laser beam 61 passes through the third groove 33 and is irradiated to the base material 11 , thereby forming a laser scribing line 611 in the base material 11 .

The electrode 13 constituting the first part 19 is a part vulnerable to impact caused by external force. Therefore, when the dicing wheel 51 pressurizes the portion adjacent to the first portion 19 (the third processing line 23 ), the electrode 13 may be damaged. Therefore, for the portion adjacent to the first portion 19 (third processing line 23 ), processing is performed using the second laser beam 61 instead of using the scribing wheel 51 . Therefore, it is possible to prevent the electrode 13 constituting the first portion 19 from being damaged due to external force during the step of cutting the substrate S.

In addition, as shown in FIG. 12 , at a position in the Z-axis direction that is the same distance from the base material 11 (that is, from the Z-axis position from the first surface (exposed surface, the surface on which the light-emitting element chip 10 is formed) of the base material 11 The position in the direction has the same distance as the position in the Z-axis direction), the width WL1 of the first laser beam 41 is greater than the width WL2 of the second laser beam 61 . Therefore, when the second laser beam 61 irradiates into the third groove 33 formed by the first laser beam 41 , the degree of interference between the second laser beam 61 and the first adhesive 14 can be minimized. That is, the influence of the second laser beam 61 on the first adhesive 14 around the second laser beam 61 can be minimized. Therefore, the degree of degeneration of the first adhesive 14 due to the irradiation of the second laser beam 61 can be minimized. Therefore, the first thin film 16 can be prevented from being fixedly attached to the light emitting element chip 10 . Therefore, the first thin film 16 can be easily removed from the light emitting element wafer 10 .

Next, as shown in Fig. 10, the substrate S is inverted.

In addition, as shown in FIG. 11 , the first laser beam 41 is irradiated along the sixth processing line 26 to remove the second film 17 and the second adhesive 15 along the sixth processing line 26 , thereby forming the sixth groove 36 . In addition, the first laser beam 41 is irradiated along the seventh processing line 27 to remove the second film 17 and the second adhesive 15 along the seventh processing line 27 , thereby forming the seventh groove 37 .

Next, a method of processing the first surface S1 and the second surface S2 of the substrate S along the Y-axis direction will be described with reference to FIGS. 14 to 19 .

First, as shown in FIG. 15 , the first laser beam 41 is irradiated along the fourth processing line 24 to remove the first film 16 and the first adhesive 14 along the fourth processing line 24 to form the fourth groove 34 . In addition, the first laser beam 41 is irradiated along the fifth processing line 25 to remove the first film 16 and the first adhesive 14 along the fifth processing line 25 , thereby forming the fifth groove 35 .

The shapes of the fourth groove 34 and the fifth groove 35 are the same as the shapes of the second groove 32 and the third groove 33 . Furthermore, the width of the first laser beam 41 used to form the fourth groove 34 and the fifth groove 35 is the same as the width of the first laser beam 41 used to form the second groove 32 and the third groove 33 .

That is, it is preferable to irradiate the first laser beam 41 so that a part of the base material 11 can be exposed through the fourth groove 34 and the fifth groove 35 . Furthermore, a part of the base material 11 exposed through the fourth groove 34 and the fifth groove 35 is preferably configured to be flat.

In addition, as shown in FIG. 16 , the scribing wheel 51 passes through the fourth groove 34 and the fifth groove 35 and pressurizes the base material 11 , thereby forming a wheel scribing line 511 in the base material 11 .

As described with reference to FIG. 8 , a part of the base material 11 exposed through the fourth groove 34 and the fifth groove 35 is configured as a flat surface. Therefore, the dicing wheel 51 can directly contact a part of the base material 11 . That is, the dicing wheel 51 can directly contact the exposed portion of the base material 11 without interfering with the first adhesive 14 .

As in the description with reference to FIG. 8 , in the step of forming the fourth groove 34 and the fifth groove 35 , the third groove reaches the bottom surface portion of the fourth groove 34 and the fifth groove 35 (that is, the portion where the base material 11 is exposed). The width WL1 (refer to FIG. 12 ) of a laser beam 41 is greater than the thickness of the tip (blade portion) of the dicing wheel 51 . Therefore, the width WG of the fourth groove 34 and the width WG of the fifth groove 35 at the predetermined depth of the fourth groove 34 and the fifth groove 35 is greater than the thickness WW of the scribing wheel 51 at the depth.

Therefore, the tip of the dicing wheel 51 does not directly contact the first adhesive 14 . Therefore, problems that may occur due to the contact between the tip of the dicing wheel 51 and the first adhesive 14 can be prevented. For example, contamination of the dicing wheel 51 that may occur due to the first adhesive 14 adhering to the tip of the dicing wheel 51 can be prevented. In addition, it is possible to prevent the cutting force of the dicing wheel 51 from being reduced due to the first adhesive 14 adhering to the tip of the dicing wheel 51 .

Next, as shown in Fig. 17, the substrate S is inverted.

In addition, as shown in FIG. 18 , the first laser beam 41 is irradiated along the eighth processing line 28 to remove the second film 17 and the second adhesive 15 along the eighth processing line 28 , thereby forming the eighth groove 38 . Furthermore, the first laser beam 41 is irradiated along the ninth processing line 29 to remove the second film 17 and the second adhesive 15 along the ninth processing line 29 , thereby forming the ninth groove 39 .

In addition, the first film 16 , the second film 17 , the first adhesive 14 and the Second adhesive 15.

In addition, the substrate S is cut along the wheel scribing line 511 and the laser scribing line 611, so that the light-emitting element wafer 10 as illustrated in FIGS. 13 and 19 can be obtained.

Hereinafter, a substrate cutting method and a substrate cutting device according to another embodiment of the present invention will be described with reference to FIGS. 20 and 21 .

As shown in FIGS. 20 and 21 , in the process of forming the second groove 32 , the third groove 33 , the fourth groove 34 and the fifth groove 35 , the first laser beam 41 can be irradiated downward and obliquely, so that the first laser beam 41 can be irradiated obliquely downward. The laser beam 41 is brought close to the upper part of the light-emitting element wafer 10 (especially, the first laser beam 41 is brought close to the portion above the light-emitting element wafer 10 adjacent to the first film 16).

Therefore, the first adhesive 14 existing in the portion adjacent to the first film 16 above the light-emitting element chip 10 can be easily removed by the first laser beam 41 . Therefore, the first thin film 16 can be easily removed from the light emitting element wafer 10 .

Hereinafter, a substrate cutting method and a substrate cutting device according to yet another embodiment of the present invention will be described with reference to FIG. 22 .

As shown in FIG. 22 , in the process of irradiating the second laser beam 61 through the third groove 33 to form the laser scribing line 611 , the second laser beam 61 can be irradiated downward and obliquely, so that the second laser beam 61 can be irradiated downwardly. The light beam 61 is away from the upper part of the light-emitting element wafer 10 and close to the lower part of the light-emitting element wafer 10 (especially, the second laser beam 61 is kept away from the portion above the light-emitting element wafer 10 adjacent to the first film 16).

Therefore, the influence of the second laser beam 61 on the first adhesive 14 existing above the light-emitting element chip 10 and adjacent to the first film 16 can be minimized. Therefore, the area where the first adhesive 14 is denatured by irradiation with the second laser beam 61 can be minimized. Therefore, the first thin film 16 can be easily removed from the light emitting element wafer 10 .

Although the preferred embodiments of the present invention have been illustratively described, the scope of the present invention is not limited to such specific embodiments, and can be appropriately modified within the scope described in the claims.

10:Light-emitting element chip 11: Base material 12: Semiconductor layer 121: First nitride layer 122: Second nitride layer 123:Active layer 13:Electrode 14:The first adhesive 15:Second adhesive 16:First film 17:Second film 18:Part 2 19:Part One 21:The first processing line 22: Second processing line 23: The third processing line 24:The fourth processing line 25: The fifth processing line 26:Sixth processing line 27:Seventh processing line 28:The eighth processing line 29: Ninth processing line 31:The first slot 32:Second slot 33:Third slot 34:Fourth slot 35:Fifth slot 36:Sixth slot 37:Seventh slot 38:The eighth slot 39: Ninth slot 40: The first laser irradiation module 41:First laser beam 51:Scribe wheel 511:Wheel scribing line 60: Second laser irradiation module 61:Second laser beam 611: Laser scribing line 71:Cargo stage 72: Stage lifting unit 73: Stage rotation unit 74:Frame 75:First head unit 76: Second head unit A: part S:Substrate S1: Side 1 S2: Second side WG, WL1, WL2, WW: Width

FIG. 1 is a diagram schematically illustrating a first side of a substrate to be cut by a substrate cutting method and a substrate cutting device according to one embodiment of the present invention. FIG. 2 is a diagram schematically illustrating a second side of a substrate to be cut by a substrate cutting method and a substrate cutting device according to one embodiment of the present invention. FIG. 3 is a diagram schematically illustrating a substrate cutting device according to one embodiment of the present invention. 4 is a cross-sectional view schematically illustrating a substrate to be cut by a substrate cutting method and a substrate cutting device according to one embodiment of the present invention. 5 to 11 are diagrams sequentially illustrating the process of processing a substrate along multiple X-axis direction processing lines through a substrate cutting method and a substrate cutting device according to an embodiment of the present invention. 12 is a diagram comparing the width of the first laser beam and the width of the second laser beam used in the substrate cutting method and the substrate cutting device according to one embodiment of the present invention. FIG. 13 is a diagram schematically illustrating a light-emitting element wafer obtained by cutting a substrate using a substrate cutting method and a substrate cutting device according to an embodiment of the present invention. 14 is a cross-sectional view schematically illustrating a substrate to be cut by a substrate cutting method and a substrate cutting device according to one embodiment of the present invention. 15 to 18 are diagrams sequentially illustrating the process of processing a substrate along multiple Y-axis direction processing lines through a substrate cutting method and a substrate cutting device according to an embodiment of the present invention. FIG. 19 is a diagram schematically illustrating a light-emitting element wafer obtained by cutting a substrate using a substrate cutting method and a substrate cutting device according to an embodiment of the present invention. 20 and 21 are cross-sectional views schematically illustrating a process of irradiating a substrate with a first laser beam using a substrate cutting method and a substrate cutting device according to another embodiment of the present invention. 22 is a cross-sectional view schematically illustrating a process of irradiating a substrate with a second laser beam using a substrate cutting method and a substrate cutting device according to yet another embodiment of the present invention.

10:Light-emitting element chip

18:Part 2

19:Part One

21:The first processing line

22: Second processing line

23: The third processing line

24:The fourth processing line

25: The fifth processing line

S:Substrate

S1: Side 1

Claims (10)

A substrate cutting method, used for cutting a substrate, the substrate includes: a light-emitting element wafer, which includes an electrode; a base material, the light-emitting element wafer is formed on the base material; a first adhesive, which is formed on the first surface of the base material , the light-emitting element chip is formed on the first side; a second adhesive is formed on the second side of the base material opposite to the first side of the base material; a first film is attached to the first adhesive ; and a second film attached to the second adhesive. The substrate cutting method is characterized in that when the part of the light-emitting element wafer where the electrode is located is called the first part, the light-emitting part adjacent to the first part is The other part of the element wafer is called the second part, the direction in which the first part and the second part are sequentially positioned is called the Y-axis direction, and the direction orthogonal to the Y-axis direction is called the X-axis direction, including : irradiating the first laser beam along the first processing line, the second processing line and the third processing line to remove the first film and the first processing line along the first processing line, the second processing line and the third processing line The first adhesive is used to form a first groove, a second groove and a third groove respectively, wherein the first processing line extends along the X-axis direction between the first part and the second part, and the second The processing line extends along the X-axis direction at a position adjacent to the second part on the periphery of the light-emitting element wafer, and the third processing line extends along a position adjacent to the first part on the periphery of the light-emitting element wafer. The step of extending in the X-axis direction; passing the scribing wheel through the second groove to pressurize the base material to form a wheel scribing line on the base material; and passing the second laser beam through the third groove In the step of irradiating the base material to form a laser scribing line on the base material, the second groove and the third groove formed in the step of forming the second groove and the third groove are respectively exposed. The exposed portion of the base material is configured as a flat surface. The substrate cutting method according to claim 1, wherein in the step of forming the second groove, the width of the first laser beam irradiated to the bottom surface portion of the second groove is greater than the thickness of the tip of the dicing wheel . The substrate cutting method according to claim 1, wherein the width of the first laser beam is greater than the width of the second laser beam at the same distance from the base material. The substrate cutting method according to claim 1, wherein the width of the second groove at the preset depth of the second groove is greater than the thickness of the tip of the dicing wheel. The substrate cutting method according to claim 1, wherein the first laser beam is irradiated obliquely downward so that the first laser beam is close to the upper part of the light-emitting element wafer. The substrate cutting method according to claim 1, wherein the second laser beam is irradiated obliquely downward to keep the second laser beam away from the upper part of the light-emitting element wafer. The substrate cutting method according to claim 1, further comprising: irradiating the first laser beam along the fourth processing line and the fifth processing line and removing the first laser beam along the fourth processing line and the fifth processing line. The film and the first adhesive are used to form fourth grooves and fifth grooves respectively, wherein the fourth processing line and the fifth processing line extend in the Y-axis direction along the periphery of the light-emitting element wafer; and the step of passing the scribing wheel through the fourth groove and the fifth groove to pressurize the base material, thereby forming a wheel scribing line on the base material. The substrate cutting method according to claim 7, further comprising: The step of inverting the substrate; and irradiating the first laser beam along the sixth and seventh processing lines to remove the second film and the second adhesive along the sixth and seventh processing lines. , thereby forming the sixth groove and the seventh groove respectively, wherein the sixth processing line and the seventh processing line extend along the periphery of the light-emitting element wafer to the second surface in the X-axis direction. The substrate cutting method according to claim 7, further comprising: the step of inverting the substrate; and irradiating the first laser beam along the eighth processing line and the ninth processing line and along the eighth processing line and the ninth processing line. The ninth processing line removes the second film and the second adhesive to form eighth grooves and ninth grooves respectively, wherein the eighth processing line and the ninth processing line are along the periphery of the light-emitting element wafer. The Y-axis direction extends from the second surface. A substrate cutting device, characterized in that it is configured to move along the surface of the substrate and includes a head unit, the head unit includes a dicing wheel, a first laser irradiation module and a second laser irradiation module, and, The substrate is configured to be cut by executing the substrate cutting method according to any one of claims 1 to 9.

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