TWI817486B - Slicing apparatus and slicing method - Google Patents
Slicing apparatus and slicing method Download PDFInfo
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- TWI817486B TWI817486B TW111117061A TW111117061A TWI817486B TW I817486 B TWI817486 B TW I817486B TW 111117061 A TW111117061 A TW 111117061A TW 111117061 A TW111117061 A TW 111117061A TW I817486 B TWI817486 B TW I817486B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明涉及一種切割設備,尤其涉及採用能相對移動的調整載台與切割機構的一種切割設備及切割方法。The present invention relates to a cutting equipment, and in particular to a cutting equipment and a cutting method using a relatively movable adjustment stage and a cutting mechanism.
在現有的切割作業(如:晶錠的切片作業)之中,待切割物大都是依據切割後的成品來推斷誤差,據以調整下一次的切割作業。然而,現有切割作業難以控制每一次切割作業的精準度。於是,本發明人認為上述缺陷可改善,乃特潛心研究並配合科學原理的運用,終於提出一種設計合理且有效改善上述缺陷的本發明。In existing cutting operations (such as ingot slicing operations), the error of the object to be cut is mostly inferred based on the cut product, and the next cutting operation is adjusted accordingly. However, it is difficult to control the accuracy of each cutting operation in existing cutting operations. Therefore, the inventor believed that the above-mentioned defects could be improved, so he devoted himself to research and applied scientific principles, and finally proposed an invention that is reasonably designed and effectively improves the above-mentioned defects.
本發明實施例在於提供一種切割設備及切割方法,能有效地改善現有切割作業所可能產生的缺陷。Embodiments of the present invention provide a cutting equipment and a cutting method that can effectively improve defects that may occur in existing cutting operations.
本發明實施例公開一種切割設備,其包括:一調整載台,具有一承載面,並且所述調整載台在所述承載面上定義有一容置空間;以及一切割機構,其對應於所述調整載台設置且能相對地轉動,並且所述切割機構包含有至少一個繞線座及一切割線;其中,至少一個所述繞線座包含有:一座體,能相對於所述調整載台移動;及一第一導輪,安裝於所述座體;其中,所述切割線繞經至少一個所述繞線座的所述第一導輪而構成一第一切割段,並且所述切割機構與所述調整載台被配置為能沿非垂直於所述承載面的一第一方向相對地移動,以使所述第一切割段穿過所述容置空間。An embodiment of the present invention discloses a cutting equipment, which includes: an adjustment stage having a bearing surface, and the adjustment stage defines an accommodation space on the bearing surface; and a cutting mechanism corresponding to the The adjustment stage is arranged and can rotate relatively, and the cutting mechanism includes at least one winding seat and a cutting wire; wherein, at least one of the winding seats includes: a body that can rotate relative to the adjustment stage. Move; and a first guide wheel installed on the base; wherein the cutting wire passes through at least one of the first guide wheels of the winding base to form a first cutting section, and the cutting wire The mechanism and the adjustment stage are configured to move relatively along a first direction that is not perpendicular to the bearing surface, so that the first cutting section passes through the accommodation space.
本發明實施例也公開一種切割方法,其包括:一前置步驟;將一待切割物固定於一切割設備上;其中,所述切割設備,包含:一調整載台,具有一承載面,並且所述待切割物固定在所述承載面上;及一切割機構,其對應於所述調整載台設置且能相對地轉動,並且所述切割機構包含有兩個繞線座及繞設於兩個所述繞線座的一切割線;其中,每個所述繞線座包含有能相對於所述調整載台移動的一座體、及安裝於所述座體的一第一導輪;其中,所述切割線繞經兩個所述第一導輪而於兩個所述第一導輪之間構成一第一切割段;一切片步驟:所述切割機構與所述調整載台沿非垂直於所述承載面的一第一方向相對地移動,以使所述第一切割段移動穿過所述待切割物的頂部,而自所述待切割物切下來一待驗晶片;以及一驗片步驟:以一晶向檢測機對所述待驗晶片進行檢驗,以得知所述待驗晶片的晶向角度。Embodiments of the present invention also disclose a cutting method, which includes: a pre-step; fixing an object to be cut on a cutting equipment; wherein the cutting equipment includes: an adjustment stage with a bearing surface, and The object to be cut is fixed on the bearing surface; and a cutting mechanism is provided corresponding to the adjustment stage and can rotate relatively, and the cutting mechanism includes two winding seats and is wound around two A cutting line for each of the winding seats; wherein each of the winding seats includes a base body that can move relative to the adjustment stage, and a first guide wheel installed on the base body; wherein , the cutting wire winds around the two first guide wheels to form a first cutting section between the two first guide wheels; the slicing step: the cutting mechanism and the adjustment stage are along the non-linear Move relatively in a first direction perpendicular to the bearing surface, so that the first cutting section moves through the top of the object to be cut, and cuts a wafer to be inspected from the object to be cut; and a Chip inspection step: Use a crystal orientation detector to inspect the wafer to be inspected to learn the crystal orientation angle of the wafer to be inspected.
綜上所述,本發明實施例所公開的切割設備及切割方法,其通過所述切割機構與所述調整載台被配置為能沿非垂直於所述承載面的所述第一方向相對地移動,以使所述第一切割段穿過所述待切割物(或所述容置空間),據以利於實施所述切片步驟與所述驗片步驟,進而令所述待切割物能夠在確認其晶向角度的情況下進行切割作業。In summary, the cutting equipment and cutting method disclosed in the embodiments of the present invention are configured through the cutting mechanism and the adjustment stage to be able to move relatively along the first direction that is not perpendicular to the bearing surface. Move so that the first cutting section passes through the object to be cut (or the accommodation space), so as to facilitate the implementation of the slicing step and the inspection step, so that the object to be cut can be Carry out cutting operations after confirming the crystal orientation angle.
為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。In order to further understand the characteristics and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, these descriptions and drawings are only used to illustrate the present invention and do not make any reference to the protection scope of the present invention. limit.
以下是通過特定的具體實施例來說明本發明所公開有關“切割設備及切割方法”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。The following is a specific example to illustrate the implementation of the "cutting equipment and cutting method" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depictions based on actual dimensions, as is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of the present invention.
應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號,但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。It should be understood that although terms such as “first”, “second” and “third” may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another component or one signal from another signal. In addition, the term "or" used in this article shall include any one or combination of more of the associated listed items depending on the actual situation.
請參閱圖1至圖12所示,其為本發明的一實施例。本實施例公開一種切割設備100與切割方法S100,其於下述說明之中是以切割一晶錠G來介紹,並且所述切割方法S100是採用本實施例的所述切割設備100來實施,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述切割設備100可以是用來切割所述晶錠G以外的物件,而所述切割方法S100所採用的切割設備也可以是不同於本實施例所載。Please refer to FIG. 1 to FIG. 12 , which is an embodiment of the present invention. This embodiment discloses a
再者,為了便於說明本實施例,以下將先介紹所述切割設備100的各個元件及其連接關係,而後再說明使用所述切割設備100的所述切割方法S100。所述切割設備100包含一調整載台1、及對應於所述調整載台1設置且能相對地轉動的一切割機構2。其中,所述調整載台1與所述切割設備100能彼此相對應地移動或轉動,並且所述調整載台1與所述切割設備100的具體運作可通過在一操控面板(圖中未示出)或一電腦(圖中未示出)之中輸入相應的參數來控制,但本發明不受限於此。Furthermore, in order to facilitate the description of this embodiment, each component of the
具體來說,如圖1至圖3所示,所述調整載台1具有一承載面11、及對應於所述承載面11的至少一個真空吸盤12。其中,所述調整載台1在所述承載面11上定義有一容置空間13,用以供一待切割物(如圖7所示的晶錠G)設置;至少一個所述真空吸盤12的一端位於所述承載面11且連通於所述容置空間13,用以吸附定位設置於所述承載面11上的所述待切割物,據以能夠快速地定位所述待切割物、還能不產生任何廢棄物,但本發明不以此為限。舉例來說,在本發明未繪示的其他實施例中,至少一個所述真空吸盤12可依據設計需求而省略或是以其他構件(如:黏膠與犧牲材)取代。Specifically, as shown in FIGS. 1 to 3 , the adjustment stage 1 has a
再者,所述調整載台1與所述切割機構2被配置為能沿非垂直於所述承載面11的一第一方向D1相對地移動、並被配置為能沿一第二方向D2相對地移動靠近,並且所述第一方向D1與所述第二方向D2相夾有介於75度~105度之間的一夾角。Furthermore, the adjustment stage 1 and the
需說明的是,『相對地移動』於本實施例中上述說明之中,是指所述調整載台1與所述切割機構2的其中至少一個產生移動。再者,為便於說明,所述第一方向D1於本實施例中平行於所述承載面11且為一水平方向(horizontal direction),而所述第二方向D2則是垂直於所述於所述承載面11且以一垂直方向(vertical direction)來說明,也就是說,所述第一方向D1與所述第二方向D2之間的所述夾角於本實施例中為90度,但本發明不受限於此。It should be noted that "relatively moving" in the above description of this embodiment means that at least one of the adjustment stage 1 and the
進一步地說,如圖12所示,所述調整載台1於本實施例中被配置為能通過相對於所述切割機構2轉動,而使所述承載面11與所述第一方向D1形成有一調整角σ11,據以同步調整所述待切割物相對於所述切割機構2的方位,但本發明不受限於此。舉例來說,在本發明未繪示的其他實施例中,所述切割設備100可以通過所述切割設備100相對於所述調整載台1轉動,進而調整所述待切割物相對於所述切割機構2的方位。Furthermore, as shown in FIG. 12 , the adjustment stage 1 in this embodiment is configured to rotate relative to the
更詳細地說,如圖1至圖3所示,所述切割機構2包含有兩個繞線座21及繞設於兩個所述繞線座21的一切割線22,並且兩個所述繞線座21於本實施例中具有大致相同的構造且大致呈鏡像對稱設置,但本發明不以此為限。舉例來說,在本發明未繪示的其他實施例中,兩個所述繞線座21可以略有略有差異、或非為鏡像對稱設置;或者,所述繞線座21的數量可以是至少一個。More specifically, as shown in FIGS. 1 to 3 , the
其中,每個所述繞線座21於本實施例中包含有能相對於所述調整載台1移動的一座體213、及安裝於所述座體213且彼此間隔設置的一第一導輪211與一第二導輪212。於本實施例的任一個所述繞線座21之中,所述座體213大致呈L型,所述第一導輪211與所述第二導輪212分別沿其中心軸線C211、C212可轉動地安裝於所述座體213的兩端,並且所述第一導輪211的所述中心軸線C211非平行於所述第二導輪212的所述中心軸線C212(如:分別垂直於兩個所述中心軸線C211、C212的兩個平面彼此垂直),而所述第一導輪211較佳是可拆卸地安裝於所述座體213,但不受限於此。Among them, each of the
更詳細地說,所述第一導輪211與所述第二導輪212皆呈圓盤狀,所述第一導輪211的半徑小於所述第二導輪212的半徑,並且兩個所述第一導輪211位於兩個所述第二導輪212的內側。其中,所述第一導輪211的所述中心軸線C211較佳是平行於所述第二方向D2,而所述第二導輪212的所述中心軸線C212較佳是平行於所述第一方向D1。In more detail, the
再者,在垂直於所述第一導輪211的所述中心軸線C211的一俯視平面(如:圖4)之中,所述第二導輪212大致位於所述第一導輪211的切線方向上;而在垂直於所述第二導輪212的所述中心軸線C212的一前視平面(如:圖5)之中,所述第一導輪211大致位於所述第二導輪212的切線方向上,但本發明不以此為限。Furthermore, in a top view plane (such as FIG. 4 ) perpendicular to the central axis C211 of the
如圖1至圖3所示,所述切割線22繞設於每個所述繞線座21的所述第一導輪211與所述第二導輪212,例如:所述切割線22依序繞設於其中一個所述繞線座21的所述第二導輪212與所述第一導輪211、再繞設於其中另一個所述繞線座21的所述第一導輪211與所述第二導輪212。其中,抵靠於所述切割線22的任一個所述第一導輪211或所述第二導輪212的部位,其對應於相應所述中心軸線C211、C212的圓心角不大於90度,但本發明不受限於此。As shown in FIGS. 1 to 3 , the
所述切割線22繞經兩個所述第一導輪211而於兩個所述第一導輪211之間構成一第一切割段221,並且所述切割機構2與所述調整載台1被配置為能沿所述第一方向D1相對地移動,以使所述第一切割段221穿過所述容置空間13。再者,當每個繞線座21的所述第一導輪211自所述座體213卸下時,所述切割線22繞經兩個所述第二導輪212而於兩個所述第二導輪212之間構成一第二切割段222,並且所述切割機構2與所述調整載台1被配置為能沿所述第二方向D2相對地移動靠近,以使所述第二切割段222進入所述容置空間13。The
此外,任一個所述繞線座21於本實施例中雖是以包含有所述座體213、所述第一導輪211、及所述第二導輪212來說明,但於本發明未繪示的其他實施例中,所述第二導輪212可以依據設計需求而被省略;或者,當所述繞線座21的數量為至少一個時,所述切割線22繞經至少一個所述繞線座21的所述第一導輪211而構成所述第一切割段221。In addition, although each of the
以上為本實施例的所述切割設備100的構造說明;如圖6至圖12所示,以下接著介紹採用所述切割設備100的所述切割方法S100。其中,所述切割方法S100於本實施例中依序包含有一前置步驟S110、一切片步驟S130、一驗片步驟S150、一調整步驟S170、及一切割步驟S190,但不以此為限。The above is a structural description of the
舉例來說,在本發明未繪示的其他實施例中,所述切割方法S100的多個所述步驟S110~S190的實施次數與排程可依據設計需求而加以調整變化,並且所述調整步驟S170及所述切割步驟S190的至少其中之一可以選擇性地被省略。以下將依序介紹每個所述步驟S110~S190,而相關於所述切割設備100的技術內容請參酌上述所載。For example, in other embodiments not shown in the present invention, the number and schedule of steps S110 to S190 of the cutting method S100 can be adjusted and changed according to design requirements, and the adjustment steps At least one of S170 and the cutting step S190 may be selectively omitted. Each of the steps S110 to S190 will be introduced in sequence below, and please refer to the above for technical content related to the
所述前置步驟S110:如圖6和圖7所示,將一晶錠G固定於所述切割設備100(的所述承載面11)上,並且所述晶錠G於本實施例中是通過所述調整載台1的至少一個所述真空吸盤12而吸附固定在所述承載面11上(如:所述晶錠G被固定於所述容置空間13內)。此外,在本發明未繪示的其他實施例中,所述晶錠G也可以通過黏膠與犧牲材而固定在所述調整載台1的所述承載面11上,據以位在所述容置空間13內。The pre-step S110: As shown in Figures 6 and 7, a crystal ingot G is fixed on the cutting device 100 (the bearing surface 11), and the crystal ingot G in this embodiment is The adjustment stage 1 is adsorbed and fixed on the carrying
所述切片步驟S130:如圖6和圖8所示,所述切割機構2與所述調整載台1沿所述第一方向D1相對地移動,以使所述第一切割段221移動穿過所述晶錠G的頂部,而自所述晶錠G切下來一待驗晶片G1。其中,所述待驗晶片G1是由所述第一切割段221沿所述第一方向D1穿過所述晶錠G的環側面而取得,並且所述待驗晶片G1的厚度較佳是愈小愈好。The slicing step S130: As shown in Figures 6 and 8, the
於本實施例中,所述晶錠G位於所述第一切割段221的一側,而兩個所述第一導輪211位於所述第一切割段221的另一側,並且所述切割設備100是以所述調整載台1相對於所述切割機構2沿所述第一方向D1移動,以使所述晶錠G被所述第一切割段221沿所述第一方向D1切割,而兩個所述第一導輪211則是能夠有效地承靠上述切割過程中所產生的反作用力。In this embodiment, the ingot G is located on one side of the
所述驗片步驟S150:如圖6和圖9所示,以一晶向檢測機200對所述待驗晶片G1進行檢驗,以得知所述待驗晶片G1的晶向角度。於本實施例中,所述待驗晶片G1的表面可以定義有相互垂直的X軸與Y軸,並且所述晶向檢測機200採用可測試所述待驗晶片G1的一X光檢測機,據以在所述待驗晶片G1的所述X軸與所述Y軸上各量測出一晶向角度值。也就是說,所述晶向角度於本實施例中包含有對應於所述待驗晶片G1的所述X軸與所述Y軸的兩個所述晶向角度值,但本發明不限制所述晶向角度的量測與定義方式。The chip inspection step S150: As shown in FIGS. 6 and 9 , a
當所述驗片步驟S150中的所述晶向角度相較於一預設晶向角度之間的差值符合一預設容許誤差時,所述切割方法S100進一步實施所述切割步驟S190:如圖6、圖10、和圖11所示,切割所述晶錠G,以使其形成多個晶種G2(也就是,多各預定切割品)。其中,所述晶錠G被切割成多個所述晶種G2的方法可依據設計需求而加以調整變化,不以本實施例的圖式為限。When the difference between the crystal orientation angle in the inspection step S150 and a preset crystal orientation angle meets a preset allowable error, the cutting method S100 further implements the cutting step S190: as follows: As shown in FIG. 6 , FIG. 10 , and FIG. 11 , the crystal ingot G is cut to form a plurality of seed crystals G2 (that is, a plurality of predetermined cutting products). The method of cutting the ingot G into a plurality of seed crystals G2 can be adjusted and changed according to design requirements and is not limited to the diagram of this embodiment.
需額外說明的是,所述預設晶向角度於本實施例中包含有各對應於所述X軸與所述Y軸上的一預設晶向角度值,並且所述預設容許誤差較佳是:在於所述X軸與所述Y軸的其中任一個上,所述待驗晶片G1的所述晶向角度值相較於所述預設晶向角度值的差值不大於0.01度,但本發明不受限於此。It should be noted that the preset crystal orientation angle in this embodiment includes a preset crystal orientation angle value corresponding to the X-axis and the Y-axis, and the preset allowable error is relatively small. Preferably, on any one of the X-axis and the Y-axis, the difference between the crystal orientation angle value of the wafer to be inspected G1 and the preset crystal orientation angle value is not greater than 0.01 degrees. , but the present invention is not limited thereto.
再者,所述切割步驟S190於本實施例中依序包含有一縱向切割步驟S191與一橫向切割步驟S192。所述縱向切割步驟S191:如圖10所示,所述切割機構2將每個所述第一導輪211卸下,再以所述切割機構2相對於所述調整載台1移動,以使所述第二切割段222可以在不同位置多次沿著所述第二方向D2切割所述晶錠G。其中,所述第二切割段222在每次沿著所述第二方向D2切割所述晶錠G時,所述第二切割段222切割至所述晶錠G的預設界線、但未貫穿所述晶錠G。Furthermore, in this embodiment, the cutting step S190 sequentially includes a longitudinal cutting step S191 and a transverse cutting step S192. The longitudinal cutting step S191: As shown in Figure 10, the
所述橫向切割步驟S192:如圖11所示,所述切割機構2重新安裝每個所述第一導輪211,再以所述調整載台1相對於所述切割機構2移動,使得所述第一切割段221可以沿著所述第一方向D1切割所述晶錠G的所述預設界線,據以使所述晶錠G形成彼此分離的多個所述晶種G2。The transverse cutting step S192: As shown in Figure 11, the
然而,當所述驗片步驟S150中的所述晶向角度相較於所述預設晶向角度之間的差值不符合所述預設容許誤差時,所述切割方法S100進一步實施所述調整步驟S170:如圖6和圖12所示,朝消除所述差值的方位來轉動所述調整載台1(如:形成有所述調整角σ11)。再者,於所述調整步驟S170之後,接著實施所述切片步驟S130與所述驗片步驟S150。However, when the difference between the crystal orientation angle in the inspection step S150 and the preset crystal orientation angle does not meet the preset allowable error, the cutting method S100 further implements the Adjustment step S170: As shown in Figures 6 and 12, rotate the adjustment stage 1 in a direction that eliminates the difference (for example, the adjustment angle σ11 is formed). Furthermore, after the adjustment step S170, the slicing step S130 and the slice inspection step S150 are then implemented.
也就是說,所述調整步驟S170、所述切片步驟S130、及所述驗片步驟S150依序輪流實施N次(N為正整數),並且當第N次的所述驗片步驟S150中的所述晶向角度相較於所述預設晶向角度之間的差值符合所述預設容許誤差時,所述切割方法S100接著實施如圖10和圖11所示的所述切割步驟S190。That is to say, the adjustment step S170, the slicing step S130, and the test step S150 are performed in turn N times (N is a positive integer), and when the Nth test step S150 When the difference between the crystal orientation angle and the preset crystal orientation angle meets the preset allowable error, the cutting method S100 then implements the cutting step S190 as shown in Figures 10 and 11 .
[本發明實施例的技術效果][Technical effects of the embodiments of the present invention]
綜上所述,本發明實施例所公開的切割設備及切割方法,其通過所述切割機構與所述調整載台被配置為能沿非垂直於所述承載面的所述第一方向相對地移動,以使所述第一切割段穿過所述晶錠(或所述容置空間),據以利於實施所述切片步驟與所述驗片步驟,進而令所述晶錠能夠在確認其晶向角度的情況下進行切割作業。In summary, the cutting equipment and cutting method disclosed in the embodiments of the present invention are configured through the cutting mechanism and the adjustment stage to be able to move relatively along the first direction that is not perpendicular to the bearing surface. Move so that the first cutting section passes through the crystal ingot (or the accommodation space) to facilitate the implementation of the slicing step and the chip inspection step, so that the crystal ingot can be confirmed before Carry out cutting operations under the condition of crystal orientation angle.
再者,本發明實施例所公開的切割方法,其還能以所述調整步驟搭配於所述切片步驟與所述驗片步驟,據以有效地控制所述晶錠的擺放位置,進而提升晶向角度的精準度。Furthermore, the cutting method disclosed in the embodiment of the present invention can also use the adjustment step to match the slicing step and the inspection step, so as to effectively control the placement position of the crystal ingot, thereby improving Accuracy of crystal orientation angle.
此外,本發明實施例所公開的切割設備及切割方法,其通過設有至少一個所述真空吸盤來固定所述晶錠(或所述待切割物),據以降低使用黏膠與犧牲材的材料成本、並能有效地省下脫除黏膠所需的時程(如:大約10小時)。In addition, the cutting equipment and cutting method disclosed in the embodiments of the present invention are provided with at least one vacuum suction cup to fix the ingot (or the object to be cut), thereby reducing the use of glue and sacrificial materials. material cost, and can effectively save the time required to remove adhesive (for example: about 10 hours).
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的專利範圍內。The contents disclosed above are only preferred and feasible embodiments of the present invention, and do not limit the patent scope of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the patent scope of the present invention. within.
100:切割設備 1:調整載台 11:承載面 12:真空吸盤 13:容置空間 2:切割機構 21:繞線座 211:第一導輪 212:第二導輪 213:座體 22:切割線 221:第一切割段 222:第二切割段 D1:第一方向 D2:第二方向 σ11:調整角 C211:中心軸線 C212:中心軸線 200:晶向檢測機 G:晶錠 G1:待驗晶片 G2:晶種 S100:切割方法 S110:前置步驟 S130:切片步驟 S150:驗片步驟 S170:調整步驟 S190:切割步驟 S191:縱向切割步驟 S192:橫向切割步驟 100:Cutting equipment 1:Adjust the carrier 11: Bearing surface 12: Vacuum suction cup 13: Accommodation space 2: Cutting mechanism 21: Winding seat 211:First guide wheel 212:Second guide wheel 213: base body 22: Cutting line 221: First cutting section 222: Second cutting section D1: first direction D2: second direction σ11:Adjustment angle C211: Central axis C212: Central axis 200: Crystal orientation detector G:crystal ingot G1: Chip to be inspected G2: seed crystal S100: Cutting method S110: Preliminary steps S130: Slicing step S150: Film inspection steps S170: Adjustment steps S190: Cutting steps S191: Longitudinal cutting steps S192: Transverse cutting steps
圖1為本發明實施例的切割設備的立體示意圖。Figure 1 is a schematic three-dimensional view of a cutting device according to an embodiment of the present invention.
圖2為圖1的切割設備於第一方向作動的立體示意圖。FIG. 2 is a perspective view of the cutting device of FIG. 1 operating in a first direction.
圖3為圖1的切割設備於第二方向作動的立體示意圖。FIG. 3 is a perspective view of the cutting device in FIG. 1 operating in a second direction.
圖4為圖1的切割設備的切割機構俯視示意圖。FIG. 4 is a schematic top view of the cutting mechanism of the cutting equipment of FIG. 1 .
圖5為圖1的切割設備的切割機構前視示意圖。FIG. 5 is a schematic front view of the cutting mechanism of the cutting equipment of FIG. 1 .
圖6為本發明實施例的切割方法的流程示意圖。Figure 6 is a schematic flow chart of a cutting method according to an embodiment of the present invention.
圖7為圖6中的切割方法的前置步驟示意圖。FIG. 7 is a schematic diagram of the preliminary steps of the cutting method in FIG. 6 .
圖8為圖6中的切割方法的切片步驟示意圖。Figure 8 is a schematic diagram of the slicing steps of the cutting method in Figure 6.
圖9為圖6中的切割方法的驗片步驟示意圖。Figure 9 is a schematic diagram of the chip inspection steps of the cutting method in Figure 6.
圖10為圖6中的切割方法的切割步驟示意圖(一)。Figure 10 is a schematic diagram (1) of the cutting steps of the cutting method in Figure 6.
圖11為圖6中的切割方法的切割步驟示意圖(二)。Figure 11 is a schematic diagram (2) of the cutting steps of the cutting method in Figure 6.
圖12為圖6中的切割方法的調整步驟示意圖。FIG. 12 is a schematic diagram of the adjustment steps of the cutting method in FIG. 6 .
100:切割設備 100:Cutting equipment
1:調整載台 1:Adjust the carrier
11:承載面 11: Bearing surface
12:真空吸盤 12: Vacuum suction cup
13:容置空間 13: Accommodation space
2:切割機構 2: Cutting mechanism
21:繞線座 21: Winding seat
211:第一導輪 211:First guide wheel
212:第二導輪 212:Second guide wheel
213:座體 213: base body
22:切割線 22: Cutting line
221:第一切割段 221: First cutting section
D1:第一方向 D1: first direction
D2:第二方向 D2: second direction
C211:中心軸線 C211: Central axis
C212:中心軸線 C212: Central axis
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| US4052584A (en) * | 1976-04-29 | 1977-10-04 | Bell Telephone Laboratories, Incorporated | Method and apparatus for cutting insulating material |
| CN103212756A (en) * | 2012-01-20 | 2013-07-24 | 发那科株式会社 | Wire electrical discharge machine carrying out electrical discharge machining by inclining wire electrode |
| CN106863628A (en) * | 2017-01-23 | 2017-06-20 | 珠海鼎泰芯源晶体有限公司 | Indium phosphide crystal ingot cuts(100)The method of chip |
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| JPH10286752A (en) * | 1997-04-10 | 1998-10-27 | Moriya Kogyo:Kk | Guide sheave for wire-saw and sheave mounting tool |
| JP2003103447A (en) * | 2001-09-28 | 2003-04-08 | Ohbayashi Corp | Guide pulley device for wire saw |
| KR101402237B1 (en) * | 2012-11-15 | 2014-05-30 | 한국생산기술연구원 | Winding error compensation apparatus of wire saw and Wire saw with the same |
| TWM515002U (en) * | 2015-10-08 | 2016-01-01 | Globalwafers Co Ltd | Jig for angular orientation of ingot |
| CN109591211B (en) * | 2019-01-03 | 2021-06-18 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | Crystal cutting device and method |
| CN111823424B (en) * | 2020-08-04 | 2025-01-07 | 福州天瑞线锯科技有限公司 | A method and device for cutting brittle and hard materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4052584A (en) * | 1976-04-29 | 1977-10-04 | Bell Telephone Laboratories, Incorporated | Method and apparatus for cutting insulating material |
| CN103212756A (en) * | 2012-01-20 | 2013-07-24 | 发那科株式会社 | Wire electrical discharge machine carrying out electrical discharge machining by inclining wire electrode |
| CN106863628A (en) * | 2017-01-23 | 2017-06-20 | 珠海鼎泰芯源晶体有限公司 | Indium phosphide crystal ingot cuts(100)The method of chip |
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