TWI814791B - Non-destructive testing methods - Google Patents
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Abstract
本發明的課題,係實現有效率地確認藉由雷射加工形成於被加工物之改質層的深度位置及長度的確認,可迅速地設定適切的雷射加工條件。 解決手段是於與X軸Y軸平面正交的Z軸方向隔開所定間隔(H)間歇地對被加工物的內部進行攝像以取得複數X軸Y軸平面畫像,計算出對於從該等畫像所得的3維畫像(101),藉由反卷積去除了模糊之鮮明的3維鮮明畫像,並與Z軸平行地切斷3維鮮明畫像,從改質層之剖面的2維畫像,檢測出改質層的Z軸座標值與改質層的長度。可迅速地進行雷射加工與改質層的狀態檢測的反復執行,可快速地找出最適合形成改質層的雷射加工條件。The object of the present invention is to efficiently confirm the depth position and length of a modified layer formed on a workpiece by laser processing, and to quickly set appropriate laser processing conditions. The solution is to intermittently photograph the inside of the workpiece at predetermined intervals (H) in the Z-axis direction orthogonal to the X-axis and Y-axis planes to obtain multiple X-axis and Y-axis plane images, and calculate The obtained 3D image (101) is a clear 3D image in which blur is removed by deconvolution, and the 3D clear image is cut parallel to the Z-axis. From the 2D image of the cross section of the modified layer, detection is performed Get the Z-axis coordinate value of the modified layer and the length of the modified layer. Laser processing and modified layer status detection can be quickly performed repeatedly, and the most suitable laser processing conditions for forming the modified layer can be quickly found.
Description
本發明係關於檢測出藉由雷射加工形成於被加工物的內部之改質層的狀態的方法。 The present invention relates to a method for detecting the state of a modified layer formed inside a workpiece by laser processing.
有從於表面中藉由預定分割線所區劃之區域形成裝置的晶圓的背面,沿著預定分割線照射對於晶圓具有透射性之波長的雷射光線,並聚光於晶圓的內部,於聚光點形成改質層,之後,對改質層施加外力,以改質層為起點分割晶圓的方法(例如,參照專利文獻1)。 There is a method for forming a device on the back of a wafer from an area divided by a predetermined dividing line on the surface, irradiating laser light with a wavelength that is transmissive to the wafer along the predetermined dividing line, and focusing the light on the inside of the wafer. A method in which a modified layer is formed at a light focusing point, and then an external force is applied to the modified layer, and the wafer is divided using the modified layer as a starting point (for example, see Patent Document 1).
在該分割方法中,晶圓的厚度方向之改質層的深度位置及長度,係與晶圓的分割容易度有關係性。因此,可利用察知改質層的深度位置及長度,來判斷是否形成有最適合分割的改質層。 In this dividing method, the depth position and length of the modified layer in the thickness direction of the wafer are related to the ease of dividing the wafer. Therefore, the depth, position and length of the modified layer can be observed to determine whether a modified layer that is most suitable for division is formed.
因此,也提案有預先切斷晶圓的端部,於晶圓的內部形成改質層,之後,對晶圓的切斷面進行攝像,藉此觀察改質層之狀態的方法(例如,參照專利文獻2)。 Therefore, a method has also been proposed in which the end portion of the wafer is cut off in advance, a modified layer is formed inside the wafer, and then the cut surface of the wafer is photographed to observe the state of the modified layer (for example, see Patent document 2).
[專利文獻1]日本專利第3408805號 [Patent Document 1] Japanese Patent No. 3408805
[專利文獻2]日本特開2017-166961號公報 [Patent Document 2] Japanese Patent Application Publication No. 2017-166961
但是,對於為了進行改質層的深度位置及長度是否最適合被加工物的分割的判斷來說,需要交互反復進行改質層的形成與形成之改質層的觀察,在專利文獻2所記載的方法中,需要切斷晶圓來觀察改質層,故發生到設定最佳的雷射加工條件為止耗費時間的問題。 However, in order to determine whether the depth position and length of the modified layer are optimal for dividing the workpiece, it is necessary to alternately repeat the formation of the modified layer and the observation of the formed modified layer. This is described in Patent Document 2. In this method, it is necessary to cut the wafer to observe the modified layer, so it takes time to set the optimal laser processing conditions.
本發明係有鑑於前述問題所發明者,課題為實現有效率地確認藉由雷射加工形成於被加工物之改質層的深度位置及長度的確認,可迅速地設定適切的雷射加工條件。 The present invention was invented in view of the above-mentioned problems. The object is to efficiently confirm the depth, position and length of the modified layer formed on the workpiece by laser processing, and to quickly set appropriate laser processing conditions. .
本發明是一種非破壞性檢測方法,係以非破壞性方式檢測出將對於具備第一面與該第一面之相反側的第二面的被加工物具有透射性之波長的雷射光線的聚光點,定位於被加工物的內部並藉由沿著X軸方向照射雷射光線而隔開於該X軸方向並排形成之改質層的非破壞性檢測方法,其中,具備:準備工程,係準備檢查裝置,該檢查裝置係具備具備物透鏡且從該第一面側對被加工物內部進行攝像的攝像手段、從該第一面側照射對於被加工物具有透射性的波長區域之光線的光源、使該物透鏡接近及離開該第一面的驅動手段、及記憶該攝像手段所攝像之畫像 的記憶手段;取得工程,係在將與該第一面平行之面設X軸Y軸平面時,於與X軸Y軸平面正交的Z軸方向,隔開所定間隔H間歇地使該物透鏡接近該第一面,將焦點定位於被加工物內的Z軸座標位置亦即於Z軸方向分別隔開將被加工物的折射率乘以該物透鏡之Z軸方向的移動量所計算出之間隔的Z軸座標位置,針對各Z軸座標值取得包含被加工物的內部之該改質層的複數X軸Y軸平面畫像,並記憶於該記憶手段;記憶工程,係對於根據該取得工程中所記憶之各Z軸座標值的複數X軸Y軸平面畫像產生的3維畫像,計算出藉由反卷積去除了模糊的鮮明之3維鮮明畫像,並記憶於該記憶手段;及檢測工程,係根據藉由與Z軸平行地切斷該記憶工程中記憶之該3維鮮明畫像所得的改質層之剖面的2維畫像,求出改質層的Z軸座標值與Z軸方向的改質層的長度,,並且根據藉由對於Z軸垂直地切斷該3維鮮明畫像所得之剖面的2維畫像,檢測出從該改質層延伸於X軸方向的龜裂。 The present invention is a non-destructive detection method that non-destructively detects laser light with a wavelength that is transmissive to a workpiece having a first surface and a second surface opposite to the first surface. The focus point is a non-destructive inspection method that is positioned inside the object to be processed and irradiates laser light along the X-axis direction to separate the modified layers formed side by side in the X-axis direction. It includes: Preparation process , an inspection device is prepared. The inspection device is equipped with an imaging means equipped with an objective lens and images the inside of the workpiece from the first surface side, and irradiates a wavelength range that is transmissive to the workpiece from the first surface side. The light source of the light, the driving means for making the object lens approach and leave the first surface, and the memory of the image captured by the imaging means The memory method; to obtain the process, when the surface parallel to the first surface is set as the X-axis Y-axis plane, the object is intermittently moved at a predetermined interval H in the Z-axis direction orthogonal to the X-axis Y-axis plane. The lens is close to the first surface, and the focus is positioned at the Z-axis coordinate position in the object to be processed, which is calculated by multiplying the refractive index of the object to be processed by the movement amount of the object lens in the Z-axis direction. Out of the Z-axis coordinate positions at intervals, a plurality of X-axis and Y-axis plane images including the modified layer inside the object are obtained for each Z-axis coordinate value, and stored in the memory means; the memory process is based on the Obtain the 3D image generated by the complex X-axis and Y-axis plane images of each Z-axis coordinate value memorized in the project, calculate the clear 3D image with the blur removed by deconvolution, and store it in the memory method; And the detection process is to obtain the Z-axis coordinate value and Z of the modified layer based on the 2-dimensional image of the cross-section of the modified layer obtained by cutting the 3-dimensional clear image memorized in the memory process parallel to the Z-axis. The length of the modified layer in the axial direction is determined, and cracks extending from the modified layer in the X-axis direction are detected based on a two-dimensional image of a cross-section obtained by cutting the three-dimensional clear image perpendicularly to the Z-axis.
前述反卷積,係將根據前述取得工程中記憶之各Z軸座標值的X軸Y軸平面畫像產生之3維畫像的傅立葉轉換,除以表示定位於改質層內的該攝像手段之焦點的光學系所致之模糊效果的3維PSF的傅立葉轉換,進而進行傅立葉逆轉換以計算出鮮明的3維畫像為佳。 The aforementioned deconvolution is the Fourier transform of the 3-dimensional image generated based on the X-axis and Y-axis plane images obtained from the Z-axis coordinate values memorized in the process, divided by the focus of the imaging means located in the modified layer. It is better to perform the Fourier transform of the 3D PSF of the blur effect caused by the optical system, and then perform the inverse Fourier transform to calculate a clear 3D image.
前述3維PSF,係Gibson and Lanni model的計算式為佳。 The aforementioned 3-dimensional PSF is preferably calculated using the Gibson and Lanni model.
前述記憶工程中所記載之鮮明的該3維鮮明畫像,係對於包含藉由前述反卷積去除了模糊之後的該各Z軸座標值鮮明之複數X軸Y軸鮮明平面畫像的3維畫像,藉由根據從對象像素在Z軸方向相鄰之該兩個X軸Y軸鮮明平面畫像 的像素之像素值與距離,使用線性內插法計算出對向之兩個X軸Y軸平面畫像之間的該對象像素的像素值,內插隔開之X軸Y軸鮮明平面畫像之間的複數像素之像素值者為佳。 The vivid three-dimensional image recorded in the aforementioned memory project is a three-dimensional image that includes the distinct X-axis and Y-axis plane images of the distinct Z-axis coordinate values after the blur has been removed by the aforementioned deconvolution. By based on the two X-axis and Y-axis distinct plane images adjacent to the object pixel in the Z-axis direction Based on the pixel value and distance of the pixel, use the linear interpolation method to calculate the pixel value of the object pixel between the two opposing X-axis and Y-axis plane images, and interpolate between the separated X-axis and Y-axis clear plane images. The pixel value of the plurality of pixels is better.
在本發明中,於記憶工程中取得3維鮮明畫像,於檢測工程中與Z軸平行地切斷3維鮮明畫像,從改質層之剖面的2維畫像檢測出改質層的Z軸座標值與改質層的長度,故可不破壞被加工物,掌握改質層的位置及長度。所以,可迅速地進行雷射加工與改質層的狀態檢測的反復執行,可快速地找出最適合形成改質層的雷射加工條件。 In the present invention, a three-dimensional clear image is obtained in the memory process, the three-dimensional clear image is cut parallel to the Z-axis in the detection process, and the Z-axis coordinate of the modified layer is detected from the two-dimensional image of the cross section of the modified layer. value and the length of the modified layer, so the position and length of the modified layer can be grasped without damaging the workpiece. Therefore, the laser processing and the state detection of the modified layer can be repeatedly performed quickly, and the most suitable laser processing conditions for forming the modified layer can be quickly found.
圖1所示之被加工物W,係例如具有圓形板狀的基板,於其表面(圖示的範例中為第一面Wa),在藉由格子狀的複數預定分割線S所區劃之區域,形成有複數裝置D。預定分割線S係延伸於X軸方向及Y軸方向。The workpiece W shown in FIG. 1 is, for example, a circular plate-shaped substrate, and its surface (the first surface Wa in the example shown) is divided by a plurality of grid-shaped predetermined dividing lines S. Area, formed with plural devices D. The predetermined dividing line S extends in the X-axis direction and the Y-axis direction.
於第一面Wa相反側的第二面Wb黏合膠帶T。被加工物W係隔著膠帶T與環狀的框架F成為一體。以下,一邊參照添附的圖面,一邊說明以非破壞方式檢測出將對於具備第一面Wa與其相反側之第二面Wb的被加工物W具有透射性之波長的雷射光線,聚光並照射於被加工物W的內部所形成的改質層的非破壞性檢測方法。The tape T is adhered to the second side Wb opposite to the first side Wa. The workpiece W is integrated with the annular frame F via the tape T. Hereinafter, with reference to the attached drawings, the non-destructive method of detecting, condensing, and transmitting laser light of a wavelength that is transparent to the workpiece W having the first surface Wa and the second surface Wb opposite to it will be described. A non-destructive detection method of the modified layer formed inside the object W by irradiation.
(1)準備工程 如圖1所示,準備例如可將改質層形成於被加工物W的內部,且可對被加工物W的內部進行攝像的檢查裝置1。檢查裝置1係具備裝置基座10,於裝置基座10之Y軸方向後部側的上面,豎立設置剖面為大略L字型的支柱11。於裝置基座10,具備保持與框架F成為一體之被加工物W的保持台12、配設於保持台12的周圍,保持框架F的框架保持手段15、使保持台12往X軸方向移動的X軸方向移動手段20、及使保持台12往Y軸方向移動的Y軸方向移動手段30。支柱11的前端係延伸至保持台12的移動方向(X軸方向)之路徑的上方側為止。(1)Preparation project As shown in FIG. 1 , for example, an inspection device 1 capable of forming a modified layer inside the workpiece W and imaging the inside of the workpiece W is prepared. The inspection device 1 includes a device base 10, and a support 11 with a roughly L-shaped cross section is erected on the rear side of the device base 10 in the Y-axis direction. The device base 10 is provided with a holding base 12 for holding the workpiece W integrated with the frame F. The frame holding means 15 for holding the frame F is arranged around the holding base 12 and moves the holding base 12 in the X-axis direction. The X-axis direction moving means 20 and the Y-axis direction moving means 30 for moving the holding base 12 in the Y-axis direction. The front end of the support 11 extends to the upper side of the path in the moving direction (X-axis direction) of the holding table 12 .
保持台12係其上面成為保持被加工物W的保持面12a。保持台12係固定於具有開口部130的護蓋台13上,於保持台12的下部,連接旋轉手段14。旋轉手段14係可使保持台12旋轉所定角度。The upper surface of the holding base 12 serves as a holding surface 12a for holding the workpiece W. The holding base 12 is fixed on the cover base 13 having the opening 130 , and the rotating means 14 is connected to the lower part of the holding base 12 . The rotation means 14 can rotate the holding platform 12 through a predetermined angle.
X軸方向移動手段20係具備藉由延伸於X軸方向的滾珠螺桿21、連接於滾珠螺桿21的一端的馬達22、與滾珠螺桿21平行延伸之一對導引軌道23、可旋轉地支持滾珠螺桿21之另一端的軸承部24、及透過Y軸方向移動手段30支持保持台12的移動基座25。於一對導引軌道23,滑接移動基座25的一方之面,滾珠螺桿21螺合於形成於移動基座25的中央部的螺帽。馬達22使滾珠螺桿21旋動時,移動基座25則沿著導引軌道23往X軸方向移動,可使保持台12往X軸方向移動。The X-axis direction moving means 20 is provided with a ball screw 21 extending in the X-axis direction, a motor 22 connected to one end of the ball screw 21, and a pair of guide rails 23 extending parallel to the ball screw 21 to rotatably support the balls. The bearing portion 24 at the other end of the screw 21 and the moving base 25 support the holding table 12 through the Y-axis direction moving means 30. One surface of the pair of guide rails 23 is slidably contacted with the moving base 25 , and the ball screw 21 is screwed to a nut formed in the center of the moving base 25 . When the motor 22 rotates the ball screw 21, the moving base 25 moves in the X-axis direction along the guide rail 23, thereby moving the holding table 12 in the X-axis direction.
Y軸方向移動手段30係具備藉由延伸於Y軸方向的滾珠螺桿31、連接於滾珠螺桿31的一端的馬達32、與滾珠螺桿31平行延伸之一對導引軌道33、可旋轉地支持滾珠螺桿31之另一端的軸承部34、及支持保持台12的移動基座35。於一對導引軌道33,滑接移動基座35的一方之面,滾珠螺桿31螺合於形成於移動基座35的中央部的螺帽。馬達32使滾珠螺桿31旋動時,移動基座35則沿著導引軌道33往Y軸方向移動,可調整保持台12之Y軸方向的位置。The Y-axis direction moving means 30 is provided with a ball screw 31 extending in the Y-axis direction, a motor 32 connected to one end of the ball screw 31, and a pair of guide rails 33 extending parallel to the ball screw 31 to rotatably support the balls. The bearing portion 34 at the other end of the screw 31 and the moving base 35 support the holding base 12 . One surface of the moving base 35 is slidably contacted with the pair of guide rails 33 , and the ball screw 31 is screwed to a nut formed in the center of the moving base 35 . When the motor 32 rotates the ball screw 31, the moving base 35 moves in the Y-axis direction along the guide rail 33, so that the position of the holding table 12 in the Y-axis direction can be adjusted.
檢查裝置1係具備對於被保持台12保持的被加工物W的第一面Wa施加雷射加工的雷射加工手段40。雷射加工手段40係具備配設於支柱11之前端的下部側,對下方照射對於圖2所示的被加工物W具有透射性之波長的雷射光線43的雷射加工頭41。於雷射加工頭41,連接有振盪雷射光線43的振盪器及調整雷射光線43之輸出的輸出調整器。如圖2所示,於雷射加工頭41的內部,內藏有用以對從振盪器振盪之雷射光線43進行聚光的聚光透鏡42。雷射加工頭41係可往垂直方向移動,可調整雷射光線43的聚光位置。The inspection apparatus 1 is equipped with the laser processing means 40 which applies laser processing to the 1st surface Wa of the workpiece W held by the holding table 12. The laser processing means 40 includes a laser processing head 41 disposed on the lower side of the front end of the support 11 and irradiating downward a laser beam 43 having a wavelength that is transparent to the workpiece W shown in FIG. 2 . The laser processing head 41 is connected to an oscillator that oscillates the laser light 43 and an output regulator that adjusts the output of the laser light 43 . As shown in FIG. 2 , a condenser lens 42 for condensing the laser light 43 oscillated from the oscillator is built into the laser processing head 41 . The laser processing head 41 can move in the vertical direction and adjust the focusing position of the laser light 43.
在此,針對藉由雷射加工手段40將改質層形成於被加工物W的內部之一例敘述。在本實施形態中,例如設定為後述之雷射加工條件來實施。再者,被加工物W係例如矽晶圓。Here, an example of forming a modified layer inside the workpiece W by the laser processing means 40 will be described. In this embodiment, for example, laser processing conditions described below are set and implemented. Furthermore, the workpiece W is, for example, a silicon wafer.
[雷射加工條件] 雷射光線的波長 :1064nm 重複頻率 :50kHz 平均輸出 :1.0W 脈衝寬度 :10nm 聚光點 :φ3.0μm 加工進送速度 :500mm/s[Laser processing conditions] Wavelength of laser light: 1064nm Repetition frequency: 50kHz Average output: 1.0W Pulse width: 10nm Focusing point: φ3.0μm Processing feed speed: 500mm/s
如圖2所示,將膠帶T側朝下,以保持台12的保持面12a吸引保持被加工物W的話,則使保持台12往雷射加工手段40的下方移動。接下來,一邊將保持台12以前述的加工進送速度(500mm/s)往例如X軸方向加工進送,一邊藉由聚光透鏡42將對於被加工物W具有透射性之波長的雷射光線43的聚光點定位於被加工物W的內部之狀態下,從被加工物W的第一面Wa側沿著圖1所示的預定分割線S照射雷射光線43,於被加工物W的內部形成強度降低之改質層M。As shown in FIG. 2 , if the workpiece W is sucked and held with the holding surface 12 a of the holding table 12 with the tape T side facing downward, the holding table 12 is moved below the laser processing means 40 . Next, while the holding table 12 is processed and fed in, for example, the X-axis direction at the aforementioned processing feed speed (500 mm/s), the laser with a wavelength that is transmissive to the workpiece W is captured by the condenser lens 42 With the focusing point of the light 43 positioned inside the object W, the laser light 43 is irradiated from the first surface Wa side of the object W along the predetermined dividing line S shown in FIG. A modified layer M with reduced strength is formed inside W.
圖1所示的檢查裝置1係為了以非破壞方式檢測出形成於被加工物W的內部的改質層M,如圖3所示般,具備具備物透鏡52,從被加工物W的第一面Wa進行攝像的攝像手段50、從第一面Wa側照射對於被加工物W具有透射性之波長區域的光線的光源60、使物透鏡52接近或離開第一面Wa的驅動手段70。又,檢查裝置1係如圖1所示,具備記憶攝像手段50所攝像之畫像的記憶手段80、可依據記憶手段80所記憶之畫像來進行畫像處理的控制手段90、及顯示各種資料(畫像、加工條件等)的監視器100。The inspection device 1 shown in FIG. 1 is equipped with an object lens 52 as shown in FIG. 3 in order to detect the modified layer M formed inside the object W in a non-destructive manner. The imaging means 50 for imaging one surface Wa, the light source 60 for irradiating light in a wavelength range that is transmissive to the workpiece W from the first surface Wa side, and the driving means 70 for moving the object lens 52 toward or away from the first surface Wa. In addition, as shown in FIG. 1 , the inspection device 1 is provided with a memory means 80 that memorizes the image captured by the image pickup means 50 , a control means 90 that can perform image processing based on the image memorized by the memory means 80 , and a display device that displays various data (images). , processing conditions, etc.) monitor 100.
攝像手段50係於支柱11之前端的下部側中接近雷射加工手段40配設。如圖3所示,攝像手段50係具備從上方對被加工物W進行攝像的相機51、配置於相機51的最下部的物透鏡52、及配置於相機51與物透鏡52之間,使從光源60發光之光線反射至下方的半鏡53。相機51係內藏CCD影像感測器或CMOS影像感測器等之攝像元件的紅外線相機。光源60係例如由紅外線LED所構成,可照射對於被加工物W具有透射性之波長區域的紅外線61。在攝像手段50中,藉由以攝像元件捕捉從光源60發光,在被加工物W的內部反射之紅外線61的反射光,可依據被加工物W之內部的X軸座標及Y軸座標,取得X軸Y軸平面畫像。攝像手段50所攝像之X軸Y軸平面畫像係記憶於記憶手段80。The imaging means 50 is disposed close to the laser processing means 40 on the lower side of the front end of the support 11 . As shown in FIG. 3 , the imaging means 50 includes a camera 51 for imaging the workpiece W from above, an objective lens 52 disposed at the bottom of the camera 51 , and an object lens 52 disposed between the camera 51 and the objective lens 52 . The light emitted by the light source 60 is reflected to the half mirror 53 below. The camera 51 is an infrared camera with a built-in imaging element such as a CCD image sensor or a CMOS image sensor. The light source 60 is composed of, for example, an infrared LED, and can emit infrared rays 61 in a wavelength range that is transparent to the workpiece W. In the imaging means 50, the reflected light of the infrared ray 61 emitted from the light source 60 and reflected inside the object W can be captured based on the X-axis coordinate and Y-axis coordinate inside the object W by using the imaging element. X-axis and Y-axis plane image. The X-axis and Y-axis plane images captured by the imaging means 50 are stored in the memory means 80 .
於物透鏡52,連接驅動手段70。驅動手段70係可進行物透鏡52之Z軸方向的上下移動的致動器。驅動手段70係例如藉由利用電壓的施加對於被保持台12保持的被加工物W往垂直方向伸縮的壓電元件所構成壓電馬達。在驅動手段70中,藉由調整施加於壓電元件的電壓,使物透鏡52往上下方向移動,可微調整物透鏡52的位置。所以,藉由驅動手段70可針對所希望之各Z軸座標值移動物透鏡52的位置移動,可針對各Z軸座標值利用攝像手段50對被加工物W之內部的X軸Y軸平面畫像進行攝像。再者,驅動手段70並不限定於壓電馬達,例如藉由可直線性移動的音圈馬達構成亦可。A driving means 70 is connected to the objective lens 52 . The driving means 70 is an actuator capable of moving the objective lens 52 up and down in the Z-axis direction. The driving means 70 is, for example, a piezoelectric motor composed of a piezoelectric element that expands and contracts in the vertical direction with respect to the workpiece W held by the holding table 12 by application of voltage. In the driving means 70, by adjusting the voltage applied to the piezoelectric element to move the objective lens 52 in the up and down direction, the position of the objective lens 52 can be finely adjusted. Therefore, the driving means 70 can move the position of the objective lens 52 for each desired Z-axis coordinate value, and the imaging means 50 can be used to image the X-axis and Y-axis plane inside the workpiece W for each Z-axis coordinate value. Take video. Furthermore, the driving means 70 is not limited to a piezoelectric motor, and may be configured by a linearly movable voice coil motor, for example.
控制手段90係至少具備藉由控制程式進行運算處理的CPU、儲存控制程式等的ROM、儲存運算處理結果等之可讀寫的RAM、輸入介面及輸出介面。控制手段90係控制旋轉手段14、X軸方向移動手段20、Y軸方向移動手段30及驅動手段70。又,控制手段90係具備處理攝像手段50所形成之畫像及記憶於記憶手段80之畫像的畫像處理部91。The control means 90 at least includes a CPU that performs calculation processing using a control program, a ROM that stores the control program, etc., a readable and writable RAM that stores calculation processing results, and an input interface and an output interface. The control means 90 controls the rotation means 14, the X-axis direction movement means 20, the Y-axis direction movement means 30, and the driving means 70. Furthermore, the control means 90 is provided with an image processing unit 91 that processes the image formed by the imaging means 50 and the image stored in the memory means 80 .
又,在畫像處理部91中,也可從攝像之複數2維畫像產生3維畫像,或從3維畫像切出並形成被加工物W的內部所形成之改質層的剖面畫像(往與Z軸方向平行之方向切斷的畫像)。藉由將如此取得之2維平面畫像及3維畫像顯示於監視器100,可觀察改質層的狀態。In addition, the image processing unit 91 may generate a 3D image from the plurality of captured 2D images, or may cut out the 3D image to form a cross-sectional image of the modified layer formed inside the workpiece W (as is the case with Image cut in a direction parallel to the Z axis). By displaying the two-dimensional plane image and the three-dimensional image thus obtained on the monitor 100, the state of the modified layer can be observed.
(2)取得工程 準備檢查裝置1,將改質層M形成於被加工物W的內部的話,如圖3所示,一邊將保持台12往X軸方向進行加工進送,一邊藉由攝像手段50從被加工物W的第一面Wa側對被加工物W的內部的狀態進行攝像。在本實施形態所示的畫像取得工程中,對與被加工物W的第一面Wa平行的X軸Y軸平面畫像複數次進行攝像。在本實施形態中,針對沿著朝向X軸方向之一列分的預定分割線S形成改質層M之後實施畫像取得工程的狀況進行說明。(2) Obtain project When the inspection device 1 is prepared and the modified layer M is formed inside the workpiece W, as shown in FIG. 3 , the holding table 12 is processed and fed in the The first surface Wa side of W captures an image of the internal state of the workpiece W. In the image acquisition process shown in this embodiment, X-axis and Y-axis plane images parallel to the first surface Wa of the workpiece W are captured multiple times. In this embodiment, a description will be given of a situation in which the modified layer M is formed along a predetermined dividing line S divided into columns in the X-axis direction and then the image acquisition process is performed.
在此,圖3所示的光源60發出之紅外線61於半鏡53中往下方反射,通過物透鏡52射入至第一面Wa時,因應被加工物W的折射率(N),紅外線61的折射角會變化。亦即,根據被加工物W之材質的種類,折射率(N)不同。圖4係揭示被加工物W之折射率(N)與藉由物透鏡52紅外線61被聚光之焦點的關係性。為了便利說明,圖示範例所示之光軸O相對之角度α係揭示通過物透鏡52的紅外線61在被加工物W的第一面Wa並未折射而直線狀射入的狀況,從此時的第一面Wa到焦點P為止的距離設為距離h1。Here, the infrared ray 61 emitted by the light source 60 shown in FIG. 3 is reflected downward in the half mirror 53 and is incident on the first surface Wa through the objective lens 52. According to the refractive index (N) of the object W to be processed, the infrared ray 61 The refraction angle will change. That is, the refractive index (N) differs depending on the type of material of the workpiece W. FIG. 4 shows the relationship between the refractive index (N) of the object W and the focus of the infrared rays 61 condensed by the objective lens 52 . For convenience of explanation, the angle α relative to the optical axis O shown in the illustrated example shows that the infrared ray 61 passing through the objective lens 52 is not refracted but is incident linearly on the first surface Wa of the object W. From this point on, The distance from the first surface Wa to the focus point P is set to distance h1.
通常,通過物透鏡52的紅外線61從被加工物W的第一面Wa射入至內部時,從紅外線61不折射時的角度α例如僅折射角度β而聚光於焦點P’。相對於光軸O的角度β係相當於折射角,此時之被加工物W的折射率(N)係根據司乃耳定律(Snell's law),依據後述的計算式(1)來計算出。Normally, when infrared rays 61 passing through the objective lens 52 are incident into the object W from the first surface Wa, the infrared rays 61 are not refracted from the angle α, for example, only the refraction angle β, and are focused on the focus point P'. The angle β with respect to the optical axis O corresponds to the refraction angle, and the refractive index (N) of the workpiece W at this time is calculated based on Snell's law and the calculation formula (1) described below.
又,藉由將利用前述計算式(1)所計算出的折射率(N)代入後述的計算式(2),可計算出被加工物W的第一面Wa到焦點P’為止的距離h2。 In addition, by substituting the refractive index (N) calculated using the aforementioned calculation equation (1) into the calculation equation (2) described later, the distance h2 from the first surface Wa of the workpiece W to the focus point P' can be calculated .
距離h2係比距離h1還長,可確認焦點遠離物透鏡。The distance h2 is longer than the distance h1, which confirms that the focus is far away from the objective lens.
對被加工物W的內部進行攝像時,驅動手段70係於與X軸Y軸平面正交的Z軸方向隔開所定間隔H,間歇性移動物透鏡52。間歇性移動物透鏡52係代表設置一定間隔,將物透鏡52的位置往Z軸方向每次移動移動量V。亦即,間隔H=移動量V。圖5的範例所示之所定間隔HR係根據成為檢查對象之被加工物W的折射率(N)及物透鏡52之Z軸方向的移動量(V)而改變,可利用將以前述計算式(1)所計算出之折射率(N)乘以移動量(V)(HR=N×V)來計算。When imaging the inside of the workpiece W, the driving means 70 intermittently moves the object lens 52 at a predetermined interval H in the Z-axis direction orthogonal to the X-axis and Y-axis planes. Intermittently moving the objective lens 52 means setting a certain interval, and moving the position of the objective lens 52 in the Z-axis direction by a movement amount V each time. That is, interval H=movement amount V. The predetermined interval HR shown in the example of FIG. 5 changes according to the refractive index (N) of the workpiece W to be inspected and the movement amount (V) of the objective lens 52 in the Z-axis direction, and can be calculated using the above-mentioned formula. (1) Calculate by multiplying the calculated refractive index (N) by the amount of movement (V) (HR=N×V).
本實施形態所示之被加工物W為例如矽晶圓時,其折射率(N)為3.6。驅動手段70所致之移動量(V)設定為例如1μm時,可藉由將被加工物W的折射率(3.6)乘以移動量(1μm),所定間隔HR被計算出為3.6μm。亦即,在被加工物W的內部中延伸之焦點的間隔HR(Z軸座標值z1與Z軸座標值z2之間的間隔)至少成為3.6。When the workpiece W shown in this embodiment is, for example, a silicon wafer, its refractive index (N) is 3.6. When the movement amount (V) caused by the driving means 70 is set to 1 μm, for example, by multiplying the refractive index (3.6) of the workpiece W by the movement amount (1 μm), the predetermined interval HR can be calculated to be 3.6 μm. That is, the distance HR between the focal points extending inside the workpiece W (the distance between the Z-axis coordinate value z1 and the Z-axis coordinate value z2) is at least 3.6.
驅動手段70係使物透鏡52往接近被加工物W的第一面Wa之方向下降,將焦點P1定位於Z軸座標值z1。藉由圖3所示的相機51對被加工物W的內部進行攝像時,例如可取得圖6所示之X軸Y軸平面畫像2a。接下來,驅動手段70係依據前述之所定間隔H(1μm)的設定,將物透鏡52間歇性往第一面Wa側移動,根據前述之折射率(N)將焦點P2定位於焦點P1的間隔延伸的Z軸座標值z2。藉由相機51對被加工物W的內部進行攝像時,例如可取得X軸Y軸平面畫像2b。如此一來,驅動手段70係利用以所定間隔H間歇性移動物透鏡52的位置,以相機51針對各Z軸座標值z1、z2…對被加工物W的內部進行攝像,可依序取得X軸Y軸平面畫像2a、2b、2c、2d、2e、2f及2g。然後,將所取得之X軸Y軸平面畫像2a~2g記憶於圖1所示之記憶手段80。The driving means 70 lowers the objective lens 52 in a direction close to the first surface Wa of the object W to position the focus P1 at the Z-axis coordinate value z1. When the camera 51 shown in FIG. 3 is used to image the inside of the workpiece W, for example, the X-axis and Y-axis plane image 2a shown in FIG. 6 can be obtained. Next, the driving means 70 intermittently moves the objective lens 52 toward the first surface Wa side based on the setting of the aforementioned predetermined interval H (1 μm), and positions the focus P2 at the interval of the focus P1 based on the aforementioned refractive index (N). Extended Z-axis coordinate value z2. When the camera 51 images the inside of the workpiece W, for example, the X-axis and Y-axis plane image 2b can be obtained. In this way, the driving means 70 intermittently moves the position of the object lens 52 at the predetermined interval H, and uses the camera 51 to image the inside of the workpiece W for each Z-axis coordinate value z1, z2..., and can sequentially obtain X Axis Y axis plane images 2a, 2b, 2c, 2d, 2e, 2f and 2g. Then, the obtained X-axis and Y-axis plane images 2a to 2g are stored in the storage means 80 shown in FIG. 1 .
(3)記憶工程 在本工程中,首先初始藉由重疊對合取得工程中所取得之各Z軸座標值的X軸Y軸平面畫像2a~2g,取得如圖7所示之1個3維畫像101。如此形成之3維畫像101係依據實際觀察之X軸Y軸平面畫像所形成者,故存在模糊部分。以下將該畫像稱為3維觀察畫像。(3)Memory engineering In this project, the X-axis and Y-axis plane images 2a-2g of each Z-axis coordinate value obtained in the project are initially obtained by overlapping and converging, and a three-dimensional image 101 as shown in Figure 7 is obtained. The three-dimensional image 101 formed in this way is formed based on the actual observed X-axis and Y-axis plane image, so there are blurred parts. This image is hereinafter referred to as a three-dimensional observation image.
在取得工程中,一邊錯開攝像手段50的焦點一邊觀察圖3所示之改質層M,故改質層M係可推測是大量點光源的聚集。然後,3維觀察畫像中存在模糊部分,故需要藉由反卷積去除模糊,計算出3維鮮明畫像。該模糊係如圖7所示,可作為揭示來自點光源的光線之3維擴散的點擴散函數PSF(x,y,z)來表示。PSF(x,y,z)係推估1個點光源看起來如何者,可藉由從3維觀察畫像去除該模糊,獲得3維鮮明畫像。所求出之3維鮮明畫像係記憶於記憶手段80。在本工程中,藉由以下所示方法,取得3維鮮明畫像。作為其方法,例如有漸近法與反濾波法。In the acquisition process, the modified layer M shown in FIG. 3 is observed while shifting the focus of the imaging means 50. Therefore, it can be inferred that the modified layer M is a collection of a large number of point light sources. Then, there is a blurred part in the 3D observation image, so it is necessary to remove the blur through deconvolution and calculate a clear 3D image. As shown in Figure 7, this blur can be expressed as a point spread function PSF (x, y, z) that reveals the three-dimensional spread of light from a point light source. PSF(x,y,z) estimates how a point light source looks like. By removing the blur from a 3D observation image, a clear 3D image can be obtained. The obtained three-dimensional vivid image is stored in the memory device 80. In this project, a clear 3D image is obtained through the method shown below. As the method, there are, for example, the asymptotic method and the inverse filtering method.
(A)漸近法 在漸近法中,如計算式(3)般,使3維鮮明畫像之亮度分布的估計值Ok (x,y,z)向真的亮度分布O(x,y,z)漸近。(A) Asymptotic method In the asymptotic method, as shown in the calculation formula (3), the estimated value O k (x, y, z) of the brightness distribution of the three-dimensional clear image is moved toward the true brightness distribution O (x, y, z ) asymptotically.
在此,OTF(x,y,z)係光傳遞函數,藉由對點擴散函數PSF(x,y,z)進行傅立葉轉換所得。Here, OTF (x, y, z) is an optical transfer function, which is obtained by performing Fourier transformation on the point spread function PSF (x, y, z).
遵從以下的計算式(4),更新估計值Ok+1 (x,y,z),向真的亮度分布Ok (x,y,z)漸近。According to the following calculation formula (4), the estimated value O k+1 (x, y, z) is updated and asymptotically approaches the true brightness distribution O k (x, y, z).
在計算式(4)中,首先取得Ok (x,y,z)×OTF (x,y,z)之值,與3維觀察畫像的傅立葉轉換I(x,y,z)的差。該差係估計值Ok (x,y,z)所包含的模糊成分。從Ok (x,y,z)減去該差之值,獲得下個估計值Ok+1 (x,y,z)。將所得之Ok+1 (x,y,z)代入計算式(4)的Ok (x,y,z),進而獲得Ok+1 (x,y,z)。到前述差成為0為止,亦即模糊成分成為0為止重複此種計算。再者,在計算式(4)所致之初始的計算時,將I(x,y,z)代入Ok (x,y,z)。重複計算式(4)的計算,模糊成分成為0時的Ok+1 (x,y,z)為3維鮮明畫像。In the calculation formula (4), first obtain the difference between the value of O k (x, y, z) × OTF (x, y, z) and the Fourier transform I (x, y, z) of the three-dimensional observation image. This difference is a fuzzy component included in the estimated value O k (x, y, z). Subtract the value of this difference from O k (x, y, z) to obtain the next estimated value O k + 1 (x, y, z). Substitute the obtained O k+1 (x, y, z) into O k (x, y, z) of the calculation formula (4), and then obtain O k+1 (x, y, z). This calculation is repeated until the difference becomes 0, that is, until the fuzzy component becomes 0. Furthermore, when calculating the initial calculation caused by equation (4), substitute I(x,y,z) into Ok (x,y,z). By repeating the calculation of equation (4), O k+1 (x, y, z) when the fuzzy component becomes 0 becomes a three-dimensional clear image.
在重複前述計算式(4)的計算時,藉由使用最大概似法,減低計算式(4)的計算次數,即使3維觀察畫像雜訊多的狀況中,也可獲得鮮明的3維鮮明畫像。When repeating the calculation of the aforementioned calculation formula (4), by using the maximum approximation method to reduce the number of calculations of the calculation formula (4), even in a situation where the 3D observation image has a lot of noise, a clear 3D image can be obtained portrait.
又,OTF(x,y,z)的推估也可藉由使用最大概似法的盲蔽反卷積法,獲得3維鮮明畫像。在盲蔽反卷積法中,每於重複計算時也更新OTF(x,y,z)。In addition, OTF (x, y, z) can also be estimated by using the blind deconvolution method using the most approximate method to obtain a clear 3D image. In the blind deconvolution method, OTF(x,y,z) is also updated every time the calculation is repeated.
(B)反濾波法 在反濾波法中,首先,藉由以下的計算式(5)求出3維觀察畫像之亮度分布的傅立葉轉換O(x,y,z)。(B)Inverse filtering method In the inverse filtering method, first, the Fourier transform O(x, y, z) of the brightness distribution of the three-dimensional observation image is obtained by the following calculation formula (5).
在此,I(x,y,z)係3維觀察畫像的傅立葉轉換,OTF(x,y,z)係對點擴散函數PSF(x,y,z)進行傅立葉轉換者,在前述計算式(5)中,將3維觀察畫像的傅立葉轉換除以點擴散函數的傅立葉轉換。然後,藉由對所求出之O(x,y,z)進行傅立葉逆轉換,獲得3維鮮明畫像的亮度分布o(x,y,z)。Here, I (x, y, z) is the Fourier transform of the three-dimensional observation image, and OTF (x, y, z) is the Fourier transform of the point spread function PSF (x, y, z). In the aforementioned calculation formula In (5), the Fourier transform of the 3D observation image is divided by the Fourier transform of the point spread function. Then, by performing inverse Fourier transform on the obtained O(x, y, z), the brightness distribution o(x, y, z) of the three-dimensional clear image is obtained.
又,在Wienner法中,如以下的計算式(6)所示般,對前述計算式(5)的分母加上常數w,進行藉由相對地S/N比高的頻帶加上較大加權之訊號成分的再構築。加入分母的常數w係具有去除高頻成分的低通濾頻器之作用。In addition, in the Wienner method, as shown in the following calculation equation (6), a constant w is added to the denominator of the aforementioned calculation equation (5), and a larger weight is added to the frequency band with a relatively high S/N ratio. Reconstruction of signal components. The constant w added to the denominator functions as a low-pass filter that removes high-frequency components.
再者,前述漸近法及反濾波法之點擴散函數PSF(x,y,z)係遵從Gibson and Lanni model,可藉由以下計算式(7)求出。Furthermore, the point spread function PSF (x, y, z) of the aforementioned asymptotic method and inverse filtering method follows the Gibson and Lanni model and can be calculated by the following calculation formula (7).
在此,計算式(7)之變數及常數係如以下所述。 k0:波數(=2π/波長) Λ:光路徑差 x,y:觀察位置的x座標、y座標 x0,y0:點光源之位置的x座標、y座標 NA:物透鏡的數值孔徑 ρ:將物透鏡的中心設為ρ=0,物透鏡的最外周設為ρ=1時之自物透鏡的中心起的距離Here, the variables and constants in calculation formula (7) are as follows. k0: wave number (=2π/wavelength) Λ: light path difference x, y: x coordinate and y coordinate of the observation position x0,y0: x-coordinate and y-coordinate of the position of the point light source NA: Numerical aperture of objective lens ρ: The distance from the center of the objective lens when the center of the objective lens is set to ρ=0 and the outermost periphery of the objective lens is set to ρ=1.
又,光路徑差Λ可使用以下的計算式(8)計算出。In addition, the optical path difference Λ can be calculated using the following calculation formula (8).
在此,計算式(8)之變數及常數係如以下所述。 z:觀察位置的Z座標 z0:點光源之位置的z座標 ns:被加工物的折射率 NA:物透鏡的數值孔徑 ρ:將物透鏡的中心設為ρ=0,物透鏡的最外周設為ρ=1時之自物透鏡的中心起的距離Here, the variables and constants in calculation formula (8) are as follows. z: Z coordinate of the observation position z0: z coordinate of the position of the point light source ns: refractive index of the object to be processed NA: Numerical aperture of objective lens ρ: The distance from the center of the objective lens when the center of the objective lens is set to ρ=0 and the outermost periphery of the objective lens is set to ρ=1.
再者,計算式(8)中,以下的計算式(9)係有與沒有被加工物時的光路徑差。In addition, in the calculation formula (8), the following calculation formula (9) has a difference in optical path from when there is no workpiece.
又,以下的計算式(10)係來自點光源的失焦成分。In addition, the following calculation formula (10) represents the out-of-focus component derived from the point light source.
(4)檢測工程
接著,與Z軸平行地切斷記憶於記憶手段80的3維鮮明畫像,取得多數的2維鮮明畫像。例如,圖9所示之Z軸X軸鮮明平面畫像400為其中一例。在此,3維PSF102係推估以聚光點P0為中心,朝向第一面Wa及第二面Wb擴徑。(4)Testing project
Next, the three-dimensional clear image stored in the memory means 80 is cut parallel to the Z-axis, and a plurality of two-dimensional clear images are obtained. For example, the Z-axis and X-axis
於圖9所示之Z軸X軸鮮明平面畫像400中,縱軸的雙刻度為圖5所示之間隔H×折射率,可利用其來求出改質層M之Z方向的長度L。又,也可求出改質層M的上端及下端的Z座標(第1檢測工程)。In the Z-axis and X-axis
另一方面,如圖10(a)~(c)所示般,也可對於Z軸垂直地,亦即與X軸Y軸平面平行地切斷記憶於記憶手段80的3維鮮明畫像,取得多數的X軸Y軸鮮明平面畫像501a、501b、501c。
但是,Z軸方向中對向之X軸Y軸鮮明平面畫像係隔開間隔HR。因此,需要使用內插法(線性內插),求出對向之X軸Y軸鮮明平面畫像之間的對象像素的像素值。
例如,如圖8所示,在求出X軸Y軸平面畫像2a與X軸Y軸平面畫像2b之間的像素300的像素值時,則求出X軸Y軸平面畫像2a之像素300正上方的像素201a的像素值及X軸Y軸平面畫像2b之像素300正下方的像素201b的像素值。又,分別求出從像素300到像素201a為止之Z軸方向的距離Z11,與從像素300到像素201b為止之Z軸方向的距離Z12。然後,進行因應各距離的加權,使用其加權取得像素201a的像素值與像素201b的像素值的加權平均,將該加權平均之值,設為像素300的像素值。同樣地,例如求出X軸Y軸平面畫像2a之像素301正上方的像素202a的像素值及X軸Y軸平面畫像2b之像素301正下方的像素202b的像素值,再分別求出從像素301到像素202a為止之Z軸方向的距離Z21,與從像素301到像素202b為止之Z軸方向的距離Z22,進行因應各距離的加權,使用該加權來取得像素202a的像素值與像素202b的像素值的加權平均,將該加權平均之值,設為像素301的像素值。如此,求出X軸Y軸平面畫像2a與X軸Y軸平面畫像2b之間的構成XY平面畫像2ab之各像素的像素值。然後,藉由針對可能存在於相鄰之X軸Y軸平面畫像間之所有像素來求出像素值,特定3維空間之所有像素的像素值,形成3維畫像(像素值計算工程)。再者,在像素值計算工程中,使用雙線性內插、最近鄰法、雙三次內插法等的內插法。圖10(a)所示之X軸Y軸鮮明平面畫像501a係放大線性內插後的3維鮮明畫像之比改質層M更遠離第一面Wa側的剖面畫像之一部分的畫像,根據該畫像係可掌握改質層M的上方中形成有接續於X軸方向之第1龜裂C1的狀況。
On the other hand, as shown in FIGS. 10 (a) to (c), the three-dimensional clear image stored in the memory means 80 can also be cut perpendicularly to the Z-axis, that is, parallel to the X-axis and Y-axis plane, and obtained Most X-axis and Y-axis
圖10(b)所示之X軸Y軸鮮明平面畫像501b係放大改質層M之中央附近的剖面畫像之一部分的畫像,根據該畫像係可掌握改質層M之中央部的狀態。又,在相鄰之改質層M之間,形成有延伸於X軸方向的龜裂C,也可掌握改質層M隔著該龜裂C連結之狀況(第2檢測工程)。
The X-axis and Y-axis
圖10(c)所示之X軸Y軸鮮明平面畫像501c係放大比聚光點P0更接近第二面Wb的剖面畫像之一部分的畫像,在該畫像中,可掌握於改質層M的下方,形成有接續於X軸方向之第2龜裂C2的狀況。如此,檢測出圖10(a)所示之第1龜裂C1及圖10(c)所示之第2龜裂C2連接延伸於Y軸方向的狀況,並且確認到連接改質層M的圖10(b)所示之
龜裂C延伸於Y軸方向的狀況,藉此,可知此時的加工條件是之後可藉由施加外力來確實分割被加工物的加工條件(第2檢測工程)。
The X-axis and Y-axis
如此,藉由取得3維鮮明畫像,可形成從各種方向切出該畫像的剖面畫像,故可從各種角度確認改質層M及龜裂C的位置及狀態。再者,圖9所示之X軸Y軸剖面畫像501ab係藉由線性內插所得的畫像,也可確認該剖面畫像。 In this way, by obtaining a three-dimensional clear image, cross-sectional images can be formed that cut the image from various directions, so the positions and states of the modified layer M and the cracks C can be confirmed from various angles. Furthermore, the X-axis and Y-axis cross-sectional image 501ab shown in FIG. 9 is an image obtained by linear interpolation, and this cross-sectional image can also be confirmed.
又,如此取得之XY鮮明平面畫像501a、501b、501c係記憶工程中去除模糊的3維鮮明畫像的剖面畫像,故可成為比取得工程中所取得之X軸Y軸平面畫像2a~2g更鮮明者。所以,可更確實地掌握改質層M及龜裂C的位置及狀態。被加工物的厚度方向之改質層M的深度位置及長度,係與被加工物的分割容易度有關係性,故可藉由掌握改質層M的深度位置及長度,來判斷改質層M是否以容易分割被加工物之方式形成。又,可有效率地確認藉由雷射加工形成於被加工物之改質層的深度位置及長度的確認,故可迅速地設定適切的雷射加工條件。
In addition, the XY
即使從X軸Y軸平面畫像2a~2g形成3維觀察畫像之後藉由內插法求出各X軸Y軸平面畫像之間的像素的像素值,因為3維觀察畫像包含模糊部分,會難以求出適切的像素值,但是,藉由反卷積去除3維觀察畫像的模糊之後,再藉由內插法,求出各X軸Y軸平面畫像之間的像素的像素值,故最終可獲得鮮明的3維鮮明畫像。再者,線 性內插係例如將相鄰之X軸Y軸平面畫像之間進行100分割並內插。 Even if a three-dimensional observation image is formed from the X-axis and Y-axis plane images 2a to 2g and then the pixel values of the pixels between the X-axis and Y-axis plane images are obtained by interpolation, it will be difficult because the three-dimensional observation image contains blurred parts. The appropriate pixel value is found. However, after removing the blur of the 3D observation image through deconvolution, the pixel value of the pixel between each X-axis and Y-axis plane image is found through interpolation, so it can finally be Get vivid 3D images. Furthermore, the line Sexual interpolation means, for example, dividing adjacent X-axis and Y-axis plane images by 100 and interpolating them.
如上所述般取得各種畫像,掌握改質層的位置及長度、及龜裂的連結,例如龜裂未連結於X軸方向時,即使施加外力也無法適當分割,故改變加工條件再次進行改質層的形成,再次取得各畫像以進行相同的分析。再進行加工條件是否適切的判斷時,不需要切斷被加工物,故可迅速地進行加工條件的調整與改質層及龜裂之狀態的確認的反復執行。 Obtain various images as mentioned above to understand the position and length of the modified layer and the connection of the cracks. For example, if the cracks are not connected in the X-axis direction, they cannot be properly divided even if external force is applied, so the processing conditions are changed and the modification is performed again. layer formation, each image was again acquired for the same analysis. When judging whether the processing conditions are appropriate, there is no need to cut the workpiece, so the processing conditions can be adjusted quickly and repeatedly to confirm the status of the modified layer and cracks.
再者,本實施形態中所示之檢查裝置1設為也具有將改質層M形成於被加工物W之內部的雷射加工裝置之功能的構造,但是,檢查裝置1並不限定於本實施形態所示之裝置構造,作為從雷射加工裝置獨立之單體的裝置構造亦可。 Furthermore, the inspection device 1 shown in this embodiment is configured to also have the function of a laser processing device that forms the modified layer M inside the workpiece W. However, the inspection device 1 is not limited to this invention. The device structure shown in the embodiment may be a separate device structure from the laser processing device.
W:被加工物 W: workpiece
Wa:第一面 Wa: first side
S:預定分割線 S: Predetermined dividing line
D:裝置 D:Device
Wb:第二面 Wb: second side
M:改質層 M: modified layer
C:龜裂 C: Crack
T:膠帶 T:Tape
F:框架 F:frame
1:檢查裝置 1: Check the device
2a、2b、2c、2d、2e、2f、2g:X軸Y軸平面畫像 2a, 2b, 2c, 2d, 2e, 2f, 2g: X-axis and Y-axis plane images
10:裝置基座 10:Device base
11:支柱 11:Pillar
12:保持台 12:Keeping platform
12a:保持面 12a:Maintenance surface
13:護蓋台 13: Covering table
130:開口部 130: opening
14:旋轉手段 14:Rotation means
15:框架保持手段 15: Frame maintenance means
20:X軸方向移動手段 20: X-axis direction movement means
21:滾珠螺桿 21: Ball screw
22:馬達 22: Motor
23:導引軌道 23:Guide track
24:軸承部 24:Bearing Department
25:移動基座 25:Mobile base
30:Y軸方向移動手段 30: Y-axis direction movement means
31:滾珠螺桿 31: Ball screw
32:馬達 32: Motor
33:導引軌道 33:Guide track
34:軸承部 34:Bearing Department
35:移動基座 35:Mobile base
40‧‧‧雷射加工手段
41‧‧‧雷射加工頭
42‧‧‧聚光透鏡
43‧‧‧雷射光線
50‧‧‧攝像手段
51‧‧‧相機
52‧‧‧物透鏡
53‧‧‧半鏡
60‧‧‧光源
61‧‧‧紅外線
70‧‧‧驅動手段
80‧‧‧記憶手段
90‧‧‧控制手段
91‧‧‧畫像處理部
100‧‧‧監視器
101‧‧‧3維畫像
102‧‧‧3維PSF
400‧‧‧ZX鮮明平面畫像
501a、501b、501c‧‧‧XY鮮明平面畫像
40‧‧‧Laser processing methods
41‧‧‧Laser processing head
42‧‧‧Condensing lens
43‧‧‧Laser light
50‧‧‧Camera means
51‧‧‧Camera
52‧‧‧objective lens
53‧‧‧half mirror
60‧‧‧Light source
61‧‧‧Infrared
70‧‧‧Driving means
80‧‧‧Memory means
90‧‧‧Control means
91‧‧‧Image Processing Department
100‧‧‧Monitor
101‧‧‧
[圖1]揭示檢查裝置之一例的構造的立體圖。 [Fig. 1] A perspective view showing the structure of an example of the inspection device.
[圖2]揭示於被加工物的內部形成改質層之狀態的剖面圖。 [Fig. 2] A cross-sectional view showing a state in which a modified layer is formed inside the workpiece.
[圖3]揭示畫像取得工程的剖面圖。 [Figure 3] A cross-sectional view showing the image acquisition process.
[圖4]揭示被加工物之折射率與物透鏡之焦點的關係的說明圖。 [Fig. 4] An explanatory diagram showing the relationship between the refractive index of the object to be processed and the focus of the objective lens.
[圖5]說明取得工程中以所定間隔H間歇地移動物透鏡之狀態的說明圖。 [Fig. 5] An explanatory diagram illustrating a state in which the object lens is intermittently moved at a predetermined interval H during the acquisition process.
[圖6]揭示取得工程中所取得之複數X軸Y軸平面畫像的畫像圖。 [圖7]揭示所觀測之3維畫像的範例的畫像圖。 [圖8]揭示藉由線性內插求出像素值之範例的立體圖。 [圖9]揭示與Z軸平行地切斷3維畫像所得之Z軸X軸鮮明平面畫像的範例的畫像圖。 [圖10]揭示與XY平面平行地切斷3維畫像所得之X軸Y軸鮮明平面畫像的範例的畫像圖。[Fig. 6] An image diagram showing multiple X-axis and Y-axis plane images obtained in the acquisition process. [Fig. 7] An image diagram showing an example of an observed three-dimensional image. [Fig. 8] A perspective view showing an example of obtaining pixel values by linear interpolation. [Fig. 9] An image diagram showing an example of a Z-axis and X-axis clear plane image obtained by cutting a three-dimensional image parallel to the Z-axis. [Fig. 10] An image diagram showing an example of an X-axis and Y-axis clear plane image obtained by cutting a three-dimensional image parallel to the XY plane.
101‧‧‧3維畫像 101‧‧‧3D portrait
102‧‧‧3維PSF 102‧‧‧3D PSF
M‧‧‧改質層 M‧‧‧Modification layer
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| TWI791910B (en) * | 2019-10-16 | 2023-02-11 | 由田新技股份有限公司 | An inspection information presentation method, inespection method, and inspection apparatus for a hole-like structure |
| JP7460274B2 (en) * | 2020-02-21 | 2024-04-02 | 株式会社ディスコ | Wafer processing method |
| JP7446673B2 (en) * | 2020-02-21 | 2024-03-11 | 株式会社ディスコ | Wafer processing method |
| JP7370902B2 (en) * | 2020-02-28 | 2023-10-30 | 株式会社ディスコ | Crack detection method |
| JP7493967B2 (en) * | 2020-03-06 | 2024-06-03 | 浜松ホトニクス株式会社 | Inspection device and inspection method |
| JP7563886B2 (en) * | 2020-03-06 | 2024-10-08 | 浜松ホトニクス株式会社 | Inspection device and inspection method |
| JP7385504B2 (en) * | 2020-03-06 | 2023-11-22 | 浜松ホトニクス株式会社 | Inspection equipment and processing system |
| JP7441684B2 (en) * | 2020-03-10 | 2024-03-01 | 浜松ホトニクス株式会社 | Laser processing equipment and laser processing method |
| JP7512053B2 (en) * | 2020-03-10 | 2024-07-08 | 浜松ホトニクス株式会社 | Laser processing device and laser processing method |
| JP7441683B2 (en) * | 2020-03-10 | 2024-03-01 | 浜松ホトニクス株式会社 | Laser processing equipment and laser processing method |
| JP7582788B2 (en) | 2020-04-06 | 2024-11-13 | 浜松ホトニクス株式会社 | Laser processing device and laser processing method |
| JP7598200B2 (en) * | 2020-04-06 | 2024-12-11 | 浜松ホトニクス株式会社 | Inspection device and inspection method |
| JP7455476B2 (en) * | 2020-05-28 | 2024-03-26 | 株式会社ディスコ | Wafer inspection equipment and wafer inspection method |
| JP2022117064A (en) * | 2021-01-29 | 2022-08-10 | 浜松ホトニクス株式会社 | Observation device, observation method, and observation object |
| JP7510063B2 (en) * | 2021-01-29 | 2024-07-03 | 株式会社東京精密 | Crack detection apparatus and method |
| JP7665345B2 (en) * | 2021-01-29 | 2025-04-21 | 浜松ホトニクス株式会社 | Observation device and observation method |
| JP7553810B2 (en) * | 2021-01-29 | 2024-09-19 | 株式会社東京精密 | Crack detection apparatus and method |
| JP7717596B2 (en) * | 2021-12-08 | 2025-08-04 | 浜松ホトニクス株式会社 | Inspection method |
| WO2025115226A1 (en) * | 2023-12-01 | 2025-06-05 | ヤマハ発動機株式会社 | Wafer inspection device, laser processing device, and wafer inspection method |
| JP2025148016A (en) * | 2024-03-25 | 2025-10-07 | 浜松ホトニクス株式会社 | Inspection device and inspection method |
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| KR20190109264A (en) | 2019-09-25 |
| TW201939024A (en) | 2019-10-01 |
| JP2019158811A (en) | 2019-09-19 |
| KR102666255B1 (en) | 2024-05-14 |
| JP7256604B2 (en) | 2023-04-12 |
| CN110270769A (en) | 2019-09-24 |
| CN110270769B (en) | 2023-01-17 |
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