TWI814434B - Light emitting diode array substrate - Google Patents

Abstract

A light-emitting diode array substrate includes a base, an adhesive layer and light emitting diode elements. The adhesive layer is disposed on the base. The adhesive layer includes adhesive structures. Each of the adhesive structure has a first protrusion and a second protrusion separated from each other. The adhesive structures are located between the light emitting diode elements and the base. A first electrode and a second electrode of each of the light emitting diode elements are respectively connected to the first protrusion and the second protrusion of a corresponding one of the adhesive structures.

Description

Light emitting diode array substrate

The present invention relates to an array substrate, and in particular to a light emitting diode array substrate.

The light-emitting diode display panel includes a driving backplane and a plurality of light-emitting diode elements transferred on the driving backplane. Inheriting the characteristics of light-emitting diodes, light-emitting diode display panels have the advantages of power saving, high efficiency, high brightness and fast response time. In addition, compared with organic light-emitting diode display panels, light-emitting diode display panels also have the advantages of easy color adjustment, long luminous life, and no image imprinting. Therefore, light-emitting diode display panels are regarded as the next generation of display technology.

During the manufacturing process of a light-emitting diode display panel, a large number of light-emitting diode elements on the temporary storage substrate must be transferred to the driving backplane, and the electrodes of the light-emitting diode elements must be connected to the pads of the driving backplane. Electrical connection. Before transferring a large number of light-emitting diode devices to the driving backplane, the adhesive structures on the light-emitting diode devices must be removed to expose the electrodes of the light-emitting diode devices. However, the adhesive structure is easy to remain on the light-emitting diode element, causing poor connection between the light-emitting diode element and the driving backplane. If more stringent dry etching process conditions are used in order to clean the adhesive structure, the light-emitting diode components will be damaged during the dry etching process and cracks will appear.

The present invention provides a light-emitting diode array substrate, which has a high bonding yield with a driving backplane of a light-emitting diode display panel.

The light-emitting diode array substrate of the present invention includes a base, an adhesive layer and a plurality of light-emitting diode elements. The adhesive layer is arranged on the base. The adhesive layer includes multiple adhesive structures. Each adhesive structure has a first protrusion and a second protrusion spaced apart from each other. A plurality of adhesive structures are located between a plurality of light emitting diode elements and the substrate. The first electrode and the second electrode of each light-emitting diode element are respectively connected to the first protrusion and the second protrusion of a corresponding adhesive structure.

The light-emitting diode array substrate of the present invention includes a base, an adhesive layer, a plurality of light-emitting diode elements and a plurality of adhesive structures. The adhesive layer is arranged on the base. A plurality of light-emitting diode elements are arranged on the adhesive layer. A plurality of adhesive structures are respectively disposed on a plurality of light-emitting diode elements. Each adhesive structure has a first surface facing the adhesive layer, and the first surface has first protrusions and second protrusions spaced apart from each other. Each light emitting diode element has a first electrode and a second electrode, and the first electrode and the second electrode are respectively connected to the first protrusion and the second protrusion of one of the plurality of adhesive structures.

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or similar parts.

It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" may mean the presence of other components between two components.

As used herein, "about," "approximately," or "substantially" includes the stated value and the average within an acceptable range of deviations from the particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the A specific amount of error associated with a measurement (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the terms "about", "approximately" or "substantially" used herein may be used to select a more acceptable deviation range or standard deviation based on optical properties, etching properties or other properties, and one standard deviation may not apply to all properties. .

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed to have meanings consistent with their meanings in the context of the relevant technology and the present invention, and are not to be construed as idealistic or excessive Formal meaning, unless expressly defined as such herein.

1A to 1F are schematic cross-sectional views of a manufacturing process of a light-emitting diode array substrate according to an embodiment of the present invention. FIG. 2 is a schematic top view of a light-emitting diode device according to an embodiment of the present invention.

Please refer to FIG. 1A and FIG. 2 . First, a light-emitting diode wafer 100 is provided. The light-emitting diode wafer 100 includes a growth substrate 110 and a plurality of light-emitting diode elements 120 formed on the growth substrate 110 . Each light-emitting diode element 120 includes a first electrode 125 and a second electrode 126 that are spaced apart from each other. In detail, each light-emitting diode element 120 further includes a first-type semiconductor layer 121, a second-type semiconductor layer 122, an active layer 123 and an insulating layer 124, wherein the active layer 123 is disposed between the first-type semiconductor layer 121 and the second-type semiconductor layer 122. Between the two-type semiconductor layers 122, the first-type semiconductor layer 121, the second-type semiconductor layer 122 and the active layer 123 form a semiconductor structure S. The insulating layer 124 is provided on the semiconductor structure S and has a first contact window 124a and a second contact. The window 124b, the first contact window 124a and the second contact window 124b of the insulating layer 124 respectively overlap the first type semiconductor layer 121 and the second type semiconductor layer 122, and the first electrode 125 and the second electrode 126 respectively pass through the insulating layer 124. The first contact window 124a and the second contact window 124b are electrically connected to the first type semiconductor layer 121 and the second type semiconductor layer 122.

Please refer to FIG. 1A. Next, a first temporary storage substrate 200 is provided. The first temporary substrate 200 includes a base 210 and an adhesive layer 220 disposed on the base 210 . The adhesive layer 220 includes a plurality of adhesive structures 222 . Each adhesive structure 222 has a first protrusion 222a and a second protrusion 222b spaced apart from each other. In this embodiment, each adhesive structure 222 also has a platform 222c. The first protrusion 222a and the second protrusion 222b are disposed on the platform 222c, and the platform 222c is located between the first protrusion 222a and the base 210 and the second protrusion 222c. between protrusion 222b and base 210. In this embodiment, the plurality of platforms 222c of the plurality of adhesive structures 222 are disconnected from each other.

3A to 3C are schematic cross-sectional views of the manufacturing process of the first temporary storage substrate according to an embodiment of the present invention. The above-mentioned manufacturing method of the first temporary storage substrate 200 is illustrated below with reference to FIGS. 3A to 3C .

Please refer to FIG. 3A. Specifically, in this embodiment, an adhesive material layer 220' can be formed on the substrate 210 first. Please refer to FIG. 3B and FIG. 3C. Next, using the grayscale mask M as a mask, the adhesive material layer 220' is patterned to form an adhesive layer 220 having a plurality of adhesive structures 222. For example, in this embodiment, the adhesive material layer 220' can be a negative photoresist. The grayscale mask M has a first area Ma, a second area Mb and a third area Mc. The light transmission of the first area Ma The light transmittance of the second area Mb is 100%, and the light transmittance of the third area Mc is greater than 0% and less than 100%. The first area Ma of the gray-scale mask M can be used to make the adhesive material layer 220 'Disconnect into a plurality of adhesive structures 222 that are separated from each other. The second area Mb and the third area Mc of the grayscale mask M can be used to make each adhesive structure 222 have a high and low drop ΔH, where the high and low drop ΔH refers to the adhesive structure 222 The difference between the maximum height H1 of the adhesive structure 222 and the height H2 of the platform 222c of the adhesive structure 222. In this embodiment, the light transmittance of the third region Mc falls in the range of 5% to 35%, for example, the maximum height H1 of the adhesive structure 222 falls in the range of 2 μm to 6 μm, and the adhesive structure 222 has a height difference ΔH For example, it falls in the range of 0.4 μm ~ 2.8 μm, but the present invention is not limited to this.

Please refer to FIG. 1A and FIG. 2 . In this embodiment, the area of any one of the first protrusion 222 a and the second protrusion 222 b of the adhesive structure 222 may be greater than or equal to the first electrode 125 of the light emitting diode element 120 and the area of any one of the second electrode 126 . Furthermore, the first direction x and the second direction y are parallel to the base 210 of the first temporary storage substrate 200 and perpendicular to each other, and the upper surface 222s of any one of the first protrusion 222a and the second protrusion 222b is at the The width Wx222a in one direction x may be greater than or equal to the width Wx125 of either the first electrode 125 and the second electrode 126 of the light-emitting diode element 120 in the first direction The width (not labeled) of the upper surface 222s of any one of the upper surfaces 222b in the second direction y may be greater than or equal to the width of any one of the first electrode 125 and the second electrode 126 of the light-emitting diode element 120 in the second direction y. The width in y is Wy125 (marked in Figure 2). For example, in this embodiment, the width Wx222a of the upper surface 222s of any one of the first protrusion 222a and the second protrusion 222b in the first direction x may be substantially equal to the width Wx222a of the light-emitting diode element 120 . The width of either one of the first electrode 125 and the second electrode 126 in the first direction x is Wx125, and the width of the upper surface 222s of either of the first protrusion 222a and the second protrusion 222b in the second direction y is ( (not labeled) may be substantially equal to the width Wy125 (labeled in FIG. 2 ) of any one of the first electrode 125 and the second electrode 126 of the light-emitting diode element 120 in the second direction y. However, the present invention is not limited to this. In another embodiment, the width Wx222a may be larger than the width Wx125 (for example, but not limited to: 2 μm larger), and the width of any one of the first protrusion 222a and the second protrusion 222b is The width (not labeled) of the upper surface 222s in the second direction y may be greater than the width Wy125 of either the first electrode 125 and the second electrode 126 of the light-emitting diode element 120 in the second direction y (for example, but not Limited to: larger than 2 μm); the upper surface 222s of any one of the first protrusion 222a and the second protrusion 222b may be about 10 μm ² . In yet another embodiment, the width Wx222a of the upper surface 222s of any one of the first protrusion 222a and the second protrusion 222b in the first direction x may also be smaller than the first electrode 125 and the first electrode 125 of the light emitting diode element 120. The width Wx125 of any one of the second electrodes 126 in the first direction x, and the width (not labeled) of the upper surface 222s of any one of the first protrusion 222a and the second protrusion 222b in the second direction y are also It may be smaller than the width Wy125 of either the first electrode 125 or the second electrode 126 of the light-emitting diode element 120 in the second direction y.

FIG. 4 is a schematic top view of a light-emitting diode wafer according to an embodiment of the present invention. FIG. 4 depicts the growth substrate 110 and the alignment mark 130 while omitting other components of the LED wafer 100 . FIG. 5 is an enlarged schematic diagram of alignment marks on a light-emitting diode wafer according to an embodiment of the present invention. FIG. 6 is a schematic top view of the adhesive layer of the first temporary storage substrate according to an embodiment of the present invention.

Referring to FIG. 1B , next, the first electrode 125 and the second electrode 126 of the light-emitting diode element 120 of the light-emitting diode wafer 100 are respectively connected with the first protrusion 222a of the adhesion structure 222 of the first temporary storage substrate 200 and the second protrusion 222b.

Please refer to FIG. 1B, FIG. 4 and FIG. 5. In this embodiment, the growth substrate 110 of the light-emitting diode wafer 100 has an element area 110a and a non-element area 110b outside the element area 110a. A plurality of light-emitting diode elements are 120 is disposed in the component area 110a. The light-emitting diode wafer 100 also has an alignment mark 130, and the alignment mark 130 is disposed in the non-component area 110b. Please refer to FIG. 1B and FIG. 6 . In this embodiment, the adhesive layer 220 of the first temporary storage substrate 200 further includes alignment marks 223 located outside the plurality of adhesive structures 222 . Please refer to FIG. 1B , FIG. 5 and FIG. 6 , during the connection process between the light-emitting diode element 120 and the adhesive structure 222 , through the alignment mark 130 of the light-emitting diode wafer 100 and the alignment of the first temporary storage substrate 200 Mark 223, the first electrode 125 and the second electrode 126 of the light-emitting diode element 120 can be aligned with the first protrusion 222a and the second protrusion 222b of the adhesive structure 222, respectively, so that the third electrode of the light-emitting diode element 120 One electrode 125 and the second electrode 126 can be accurately connected to the first protrusion 222a and the second protrusion 222b of the adhesive structure 222.

1B and 1C, then, the growth substrate 110 of the light-emitting diode wafer 100 is removed, and the light-emitting diode elements 120 are left on the first temporary storage substrate 200 to form a light-emitting diode array substrate. 10. For example, in this embodiment, laser lift-off (LLO) technology can be used to separate the growth substrate 110 and the light-emitting diode element 120, but the invention is not limited thereto.

Referring to FIG. 1C , the light-emitting diode array substrate 10 includes a base 210 , an adhesive layer 220 and a plurality of light-emitting diode elements 120 . The adhesive layer 220 is disposed on the substrate 210 . The adhesive layer 220 includes a plurality of adhesive structures 222 . Each adhesive structure 222 has a first protrusion 222a and a second protrusion 222b spaced apart from each other. The plurality of adhesive structures 222 are located between the plurality of light-emitting diode elements 120 and the substrate 210 . The first electrode 125 and the second electrode 126 of each light-emitting diode element 120 are respectively connected to the first protrusion 222a and the second protrusion 222b of the corresponding adhesive structure 222.

In this embodiment, a first air gap g1 exists between the insulating layer 124 of the light-emitting diode element 120 and the platform 222c of the adhesive structure 222. The first air gap g1 is located between the first electrode 125 and the second electrode 126 of the light emitting diode element 120 and between the first protrusion 222 a and the second protrusion 222 b of the adhesive structure 222 . That is to say, the first air gap g1 is formed by the first electrode 125 of the light-emitting diode element 120, the insulating layer 124 of the light-emitting diode element 120, the second electrode 126 of the light-emitting diode element 120, and the adhesive structure 222. An open space is surrounded by the second protrusion 222b, the platform 222c of the adhesive structure 222, and the first protrusion 222a of the adhesive structure 222.

In this embodiment, there is a second air gap g2 between the insulating layer 124 of the LED element 120 and the platform 222c of the adhesive structure 222, and the first electrode 125 of the LED element 120 and the adhesive structure 222 are The first protrusion 222a is located between the first air gap g1 and the second air gap g2. In this embodiment, there is a third air gap g3 between the insulating layer 124 of the LED element 120 and the platform 222c of the adhesive structure 222, and the second electrode 126 of the LED element 120 and the adhesive structure 222 are The second protrusion 222b is located between the first air gap g1 and the third air gap g3.

Please refer to FIG. 1D. Next, a second temporary storage substrate 300 is provided, where the second temporary storage substrate 300 includes a base 310 and an adhesive layer 320 disposed on the base 310. In this embodiment, the adhesive layer 320 can cover the entire surface of the substrate 310, but the invention is not limited thereto.

Please refer to FIG. 1D and FIG. 1E. Next, the light-emitting diode elements 120 and the adhesive structure 222 of the light-emitting diode array substrate 10 are selectively transferred to the adhesive layer 320 of the second temporary storage substrate 300 to form another Light emitting diode array substrate 20 . The arrangement of the plurality of light-emitting diode elements 120 of the light-emitting diode array substrate 10 is different from the arrangement of the plurality of light-emitting diode elements 120 of another light-emitting diode array substrate 20 . The arrangement of the plurality of LED elements 120 of another LED array substrate 20 is determined according to the pad positions of the driving backplane of the LED display panel (not shown) to be formed.

Please refer to FIG. 1D and FIG. 1E. In this embodiment, laser lift-off (LLO) technology can be used to separate the adhesive structure 222 from the base 210 of the first temporary storage substrate 200, so that the adhesive structure 222 and The light-emitting diode element 120 is transferred to the adhesive layer 320 of the second temporary storage substrate 300 to form another light-emitting diode array substrate 20 .

Referring to FIG. 1E , the LED array substrate 20 includes a base 310 , an adhesive layer 320 , a plurality of LED elements 120 and a plurality of adhesive structures 222 . The adhesive layer 320 is disposed on the base 310 . A plurality of light emitting diode elements 120 are disposed on the adhesive layer 320 . The plurality of adhesive structures 222 are respectively disposed on the plurality of light-emitting diode elements 120 . Each adhesive structure 222 has a first surface 222s1 facing the adhesive layer 320. The first surface 222s1 has a first protrusion 222a and a second protrusion 222b spaced apart from each other. Each light-emitting diode element 120 has a first electrode 125 and a second electrode 126, and the first electrode 125 and the second electrode 126 are respectively connected to the first protrusion 222a and the second protrusion 222b of a corresponding adhesive structure 222. .

In this embodiment, each adhesive structure 222 has a second surface 222s2 facing away from the adhesive layer 320, and the roughness of the second surface 222s2 is smaller than the roughness of the first surface 222s1. Specifically, in this embodiment, the first surface 222s1 of each adhesive structure 222 facing the adhesive layer 320 is an undulating surface with first protrusions 222a and second protrusions 222b, and the back surface of each adhesive structure 222 The second surface 222s2 facing the adhesive layer 320 is substantially a plane. However, the present invention is not limited thereto. In another embodiment, the second surface 222s2 of the adhesive structure 222 facing away from the adhesive layer 320 may also be slightly damaged during the laser peeling process corresponding to FIG. 1D to form micro-defects. Class plane.

In this embodiment, the first protrusion 222a and the second protrusion 222b of the adhesive structure 222 are located between the platform 222c of the adhesive structure 222 and the adhesive layer 320. In this embodiment, the plurality of platforms 222c of the plurality of adhesive structures 222 of the light-emitting diode array substrate 20 are disconnected from each other. In this embodiment, after the interconnected light-emitting diode element 120 and the adhesive structure 222 are transferred to the adhesive layer 320 of the second temporary substrate 300, the insulating layer 124 of the light-emitting diode element 120 and the platform of the adhesive structure 222 The first air gap g1, the second air gap g2 and the third air gap g3 still exist between 222c.

Please refer to FIG. 1E and FIG. 1F. Next, a dry etching process is used to remove the adhesive structure 222 on the light-emitting diode element 120 to expose the first electrode 125 and the second electrode 126 of the light-emitting diode element 120, and another step is completed. The light-emitting diode array substrate 30 , wherein the light-emitting diode elements 120 on the light-emitting diode array substrate 30 are used to be electrically connected to the driving backplane of the light-emitting diode display panel (not shown).

It is worth mentioning that there is at least a first air gap g1 between the insulating layer 124 of the light-emitting diode element 120 and the platform 222c of the adhesive structure 222; in the dry etching process corresponding to FIG. 1E, the air gap of the adhesive structure 222 is removed. In addition to etching the adhesive structure 222 from the second surface 222s2 of the adhesive structure 222, the plasma (not shown) can also etch the adhesive structure 222 from the first air gap g1. Therefore, the adhesive structure 222 can be removed without over-etching, thereby reducing the probability of the light-emitting diode element 120 being damaged during the etching process.

In addition, since the adhesive structure 222 on the light-emitting diode element 120 can be removed without excessive etching, the light-emitting diode element 120 of the light-emitting diode array substrate 30 and the light-emitting diode display panel The driving backplane (not shown) has a high bonding yield.

Furthermore, in this embodiment, the plasma used for etching can also etch the adhesive structure 222 from the second air gap g2 and the third air gap g3. The second air gap g2 and the third air gap g3 also help to reduce the probability of the light emitting diode element 120 being damaged during the etching process.

10, 20, 30: LED array substrate

100:LED wafer

110:Growth substrate

110a: component area

110b: non-component area

120: Light emitting diode components

121: First type semiconductor layer

122: Second type semiconductor layer

123:Active layer

124:Insulation layer

124a: First contact window

124b: Second contact window

125: first electrode

126:Second electrode

130, 223: counterpoint mark

200: First temporary storage substrate

210, 310: Base

220, 320: Adhesive layer

220’: Adhesive material layer

222: Adhesion structure

222a: first bump

222b: Second bump

222c:Platform

222s: Upper surface

222s1: first surface

222s2: Second surface

300: Second temporary storage substrate

g1: first air gap

g2: second air gap

g3: The third air gap

H1, H2: height

M: Grayscale mask

Ma: District 1

Mb:Second area

Mc:Third District

S: semiconductor structure

Wx125, Wy125, Wx222a: Width

x: first direction

y: second direction

ΔH: height difference

1A to 1F are schematic cross-sectional views of a manufacturing process of a light-emitting diode array substrate according to an embodiment of the present invention. FIG. 2 is a schematic top view of a light-emitting diode device according to an embodiment of the present invention. 3A to 3C are schematic cross-sectional views of the manufacturing process of the first temporary storage substrate according to an embodiment of the present invention. FIG. 4 is a schematic top view of a light-emitting diode wafer according to an embodiment of the present invention. FIG. 5 is an enlarged schematic diagram of alignment marks on a light-emitting diode wafer according to an embodiment of the present invention. FIG. 6 is a schematic top view of the adhesive layer of the first temporary storage substrate according to an embodiment of the present invention.

20: Light emitting diode array substrate

120: Light emitting diode components

121: First type semiconductor layer

122: Second type semiconductor layer

123:Active layer

124:Insulation layer

124a: First contact window

124b: Second contact window

125: first electrode

126:Second electrode

222: Adhesion structure

222a: first bump

222b: Second bump

222c:Platform

222s1: first surface

222s2: Second surface

300: Second temporary storage substrate

310: Base

320:Adhesive layer

g1: first air gap

g2: second air gap

g3: The third air gap

S: semiconductor structure

Claims (17)

A light-emitting diode array substrate, including: a base; an adhesive layer disposed on the base, wherein the adhesive layer includes a plurality of adhesive structures, and each of the adhesive structures has a platform, a first protrusion and a second protrusion. The first protrusion and the second protrusion are arranged on a plane of the platform, and a part of the plane is located between the first protrusion and the second protrusion to separate the The first protrusion and the second protrusion; and a plurality of light-emitting diode elements, wherein the adhesion structures are located between the light-emitting diode elements and the substrate, each of the light-emitting diode elements A first electrode and a second electrode are respectively connected to the first protrusion and the second protrusion of one of the adhesive structures. The light-emitting diode array substrate of claim 1, wherein the platform is located between the first protrusion and the base and between the second protrusion and the base. The light-emitting diode array substrate of claim 2, wherein the plurality of platforms of the adhesive structures are disconnected from each other. The light-emitting diode array substrate of claim 2, wherein each of the light-emitting diode elements includes: a first-type semiconductor layer; a second-type semiconductor layer; An active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer, wherein the first-type semiconductor layer, the second-type semiconductor layer and the active layer form a semiconductor structure; and an insulating layer, is disposed on the semiconductor structure and has a first contact window and a second contact window respectively overlapping the first type semiconductor layer and the second type semiconductor layer, wherein the first electrode and the second electrode respectively pass through The first contact window and the second contact window of the insulating layer are electrically connected to the first type semiconductor layer and the second type semiconductor layer; there is a gap between the insulating layer and the platform of one of the adhesion structures. a first air gap. The light-emitting diode array substrate of claim 4, wherein the first air gap is located between the first electrode and the second electrode and between the first protrusion and the second protrusion. The light-emitting diode array substrate of claim 5, wherein there is a second air gap between the insulating layer and the platform of the adhesive structure, and the first electrode and the first protrusion Located between the first air gap and the second air gap. The light-emitting diode array substrate of claim 6, wherein there is a third air gap between the insulating layer and the platform of the one of the adhesive structures, and the second electrode and the second protrusion Located between the first air gap and the third air gap. The light-emitting diode array substrate of claim 1, wherein the adhesive layer further includes an alignment mark located outside the adhesive structures. A light-emitting diode array substrate, including: a base; an adhesive layer disposed on the base; a plurality of light-emitting diode elements disposed on the adhesion layer; and a plurality of adhesion structures respectively disposed on the light-emitting diodes. On the diode element, each of the adhesive structures has a first surface facing the adhesive layer, and the first surface has a first protrusion and a second protrusion spaced apart from each other, and the adhesive structures Each of the structures also has a platform having a plane of the first surface, a portion of the plane being located between the first protrusion and the second protrusion to separate the first protrusion and the third protrusion. Two protrusions; each of the light-emitting diode elements has a first electrode and a second electrode, and the first electrode and the second electrode are respectively connected to the first of one of the adhesive structures. protrusion and the second protrusion. The light-emitting diode array substrate of claim 9, wherein the first protrusion and the second protrusion are located between the platform and the adhesive layer. The light-emitting diode array substrate of claim 10, wherein the plurality of platforms of the adhesive structures are disconnected from each other. The light-emitting diode array substrate of claim 10, wherein each of the light-emitting diode elements includes: a first-type semiconductor layer; a second-type semiconductor layer; An active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer, wherein the first-type semiconductor layer, the second-type semiconductor layer and the active layer form a semiconductor structure; and an insulating layer, is disposed on the semiconductor structure and has a first contact window and a second contact window respectively overlapping the first type semiconductor layer and the second type semiconductor layer, wherein the first electrode and the second electrode respectively pass through The first contact window and the second contact window of the insulating layer are electrically connected to the first type semiconductor layer and the second type semiconductor layer; there is a gap between the insulating layer and the platform of one of the adhesion structures. a first air gap. The light-emitting diode array substrate of claim 12, wherein the first air gap is located between the first electrode and the second electrode and between the first protrusion and the second protrusion. The light-emitting diode array substrate of claim 13, wherein there is a second air gap between the insulating layer and the platform of the adhesive structure, and the first electrode and the first protrusion Located between the first air gap and the second air gap. The light-emitting diode array substrate of claim 14, wherein there is a third air gap between the insulating layer and the platform of the adhesive structure, and the second electrode and the second protrusion Located between the first air gap and the third air gap. The light-emitting diode array substrate of claim 9, wherein each of the adhesive structures has a second surface facing away from the adhesive layer, and the roughness of the second surface is smaller than the roughness of the first surface. Spend. The light-emitting diode array substrate of claim 9, wherein each of the adhesive structures has a second surface facing away from the adhesive layer, and the second surface is substantially a plane.

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