TWI813503B - Display apparatus - Google Patents
Display apparatus Download PDFInfo
- Publication number
- TWI813503B TWI813503B TW111142968A TW111142968A TWI813503B TW I813503 B TWI813503 B TW I813503B TW 111142968 A TW111142968 A TW 111142968A TW 111142968 A TW111142968 A TW 111142968A TW I813503 B TWI813503 B TW I813503B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxidation conductive
- island
- layer
- test pad
- conductive layer
- Prior art date
Links
- 230000003064 anti-oxidating effect Effects 0.000 claims abstract description 98
- 238000012360 testing method Methods 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000010410 layer Substances 0.000 claims description 153
- 239000012790 adhesive layer Substances 0.000 claims description 21
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RQIPKMUHKBASFK-UHFFFAOYSA-N [O-2].[Zn+2].[Ge+2].[In+3] Chemical compound [O-2].[Zn+2].[Ge+2].[In+3] RQIPKMUHKBASFK-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum tin oxide Chemical compound 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Images
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Preparation Of Compounds By Using Micro-Organisms (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
- Compounds Of Unknown Constitution (AREA)
Abstract
Description
本發明是有關於一種光電裝置,且特別是有關於一種顯示裝置。The present invention relates to an optoelectronic device, and in particular to a display device.
發光二極體顯示面板包括背板及轉置於背板上的多個發光二極體元件。繼承發光二極體的特性,發光二極體顯示面板具有省電、高效率、高亮度及反應時間快等優點。此外,相較於有機發光二極體顯示面板,發光二極體顯示面板還具有色彩易調校、發光壽命長、無影像烙印等優勢。因此,發光二極體顯示面板被視為下一世代的顯示技術。The light-emitting diode display panel includes a backplane and a plurality of light-emitting diode elements transferred on the backplane. Inheriting the characteristics of light-emitting diodes, light-emitting diode display panels have the advantages of power saving, high efficiency, high brightness and fast response time. In addition, compared with organic light-emitting diode display panels, light-emitting diode display panels also have the advantages of easy color adjustment, long luminous life, and no image imprinting. Therefore, light-emitting diode display panels are regarded as the next generation of display technology.
一般而言,為實現超窄邊框甚至無邊框的發光二極體顯示面板,會將周邊線路(例如:扇出走線、測試墊等)製作於背板的背面上,然後,再以可剝膠層覆蓋及保護之。可剝膠層具有重疊於測試墊的開口,以方便測試機台的探針插入,進行電性測試。在電性測試時,測試墊容易被探針破壞,導致後續進行信賴性測試後發光二極體顯示面板於測試墊處出現腐蝕(corrosion)現象並沿著蔓延至扇出走線內部。Generally speaking, in order to realize an ultra-narrow bezel or even a bezel-less LED display panel, peripheral circuits (such as fan-out traces, test pads, etc.) are made on the back of the backplane, and then peelable glue is used. Cover and protect it. The peelable adhesive layer has an opening that overlaps the test pad to facilitate the insertion of the probe of the test machine for electrical testing. During electrical testing, the test pads are easily damaged by probes, causing corrosion of the LED display panel at the test pads and spreading to the inside of the fan-out traces after subsequent reliability testing.
本發明提供一種顯示裝置,品質佳、良率高。The present invention provides a display device with good quality and high yield.
本發明的顯示裝置包括基板、畫素結構、金屬層、第一抗氧化導電層及絕緣層。基板具有相對的顯示面及背面。畫素結構設置於基板的顯示面。金屬層設置於基板的背面,且包括島狀測試墊、走線的第一段及走線的第二段,其中走線的第一段及第二段分別位於島狀測試墊的兩側且與島狀測試墊於結構上分離。第一抗氧化導電層設置於背面,且包括第一橋接圖案及第二橋接圖案,其中第一橋接圖案連接於走線的第一段與島狀測試墊之間,且第二橋接圖案連接於走線的第二段與島狀測試墊之間。絕緣層設置於第一抗氧化導電層上,且具有一開口,其中絕緣層的開口重疊於島狀測試墊。The display device of the present invention includes a substrate, a pixel structure, a metal layer, a first anti-oxidation conductive layer and an insulating layer. The substrate has an opposite display surface and a back surface. The pixel structure is arranged on the display surface of the substrate. The metal layer is disposed on the back side of the substrate and includes an island-shaped test pad, a first section of the trace, and a second section of the trace. The first section and the second section of the trace are respectively located on both sides of the island-shaped test pad. Structurally separated from the island test pad. The first anti-oxidation conductive layer is disposed on the back and includes a first bridge pattern and a second bridge pattern, wherein the first bridge pattern is connected between the first section of the trace and the island test pad, and the second bridge pattern is connected between Between the second segment of the trace and the island test pad. The insulating layer is disposed on the first anti-oxidation conductive layer and has an opening, wherein the opening of the insulating layer overlaps the island-shaped test pad.
在本發明的一實施例中,上述的顯示裝置更包括可剝膠層,設置於絕緣層上,且具有一開口,其中可剝膠層的開口重疊於島狀測試墊。In an embodiment of the present invention, the above-mentioned display device further includes a peelable adhesive layer disposed on the insulating layer and having an opening, wherein the opening of the peelable adhesive layer overlaps the island-shaped test pad.
在本發明的一實施例中,上述的可剝膠層的開口更重疊於第一抗氧化導電層的第一橋接圖案及第二橋接圖案。In an embodiment of the present invention, the openings of the peelable adhesive layer further overlap the first bridge pattern and the second bridge pattern of the first anti-oxidation conductive layer.
在本發明的一實施例中,上述的金屬層位於第一抗氧化導電層與基板的背面之間。第一抗氧化導電層更包括抗氧化導電圖案,設置於金屬層的島狀測試墊上,其中可剝膠層的開口、絕緣層的開口與抗氧化導電圖案重疊。In an embodiment of the present invention, the above-mentioned metal layer is located between the first anti-oxidation conductive layer and the back surface of the substrate. The first anti-oxidation conductive layer further includes an anti-oxidation conductive pattern, which is disposed on the island-shaped test pad of the metal layer, wherein the openings of the peelable adhesive layer, the openings of the insulating layer overlap with the anti-oxidation conductive pattern.
在本發明的一實施例中,上述的第一橋接圖案及第二橋接圖案分別設置於抗氧化導電圖案的兩側且與抗氧化導電圖案於結構上分離。In an embodiment of the present invention, the above-mentioned first bridge pattern and the second bridge pattern are respectively disposed on both sides of the anti-oxidation conductive pattern and are structurally separated from the anti-oxidation conductive pattern.
在本發明的一實施例中,上述的金屬層位於第一抗氧化導電層與基板的背面之間。顯示裝置更包括第二抗氧化導電層,設置於金屬層與基板的背面之間,其中金屬層的走線的第一段與金屬層的島狀測試墊具有第一間隙,金屬層的走線的第二段與金屬層的島狀測試墊具有第二間隙,第二抗氧化導電層具有分別重疊於第一間隙及第二間隙的第一區及第二區,第一抗氧化導電層的第一橋接圖案及第二橋接圖案分別設置於第一間隙及第二間隙且分別電性連接至第二抗氧化導電層的第一區及第二區。In an embodiment of the present invention, the above-mentioned metal layer is located between the first anti-oxidation conductive layer and the back surface of the substrate. The display device further includes a second anti-oxidation conductive layer disposed between the metal layer and the back side of the substrate, wherein the first section of the trace of the metal layer has a first gap with the island-shaped test pad of the metal layer, and the trace of the metal layer The second section and the island-shaped test pad of the metal layer have a second gap, the second anti-oxidation conductive layer has a first area and a second area respectively overlapping the first gap and the second gap, the first anti-oxidation conductive layer The first bridge pattern and the second bridge pattern are respectively disposed in the first gap and the second gap and are electrically connected to the first region and the second region of the second anti-oxidation conductive layer respectively.
在本發明的一實施例中,上述的第二抗氧化導電層更具有第三區,重疊於金屬層的島狀測試墊;第三區的兩端分別與第一區及第二區連接。In one embodiment of the present invention, the above-mentioned second anti-oxidation conductive layer further has a third region, which overlaps the island-shaped test pad of the metal layer; both ends of the third region are connected to the first region and the second region respectively.
在本發明的一實施例中,上述的第一抗氧化導電層位於金屬層與基板的背面之間。In an embodiment of the present invention, the above-mentioned first anti-oxidation conductive layer is located between the metal layer and the back surface of the substrate.
在本發明的一實施例中,上述的第一抗氧化導電層更包括抗氧化導電圖案,其中金屬層的島狀測試墊設置於第一抗氧化導電層的抗氧化導電圖案上,且抗氧化導電圖案的兩端分別與第一橋接圖案及第二橋接圖案連接。In one embodiment of the present invention, the above-mentioned first anti-oxidation conductive layer further includes an anti-oxidation conductive pattern, wherein the island-shaped test pads of the metal layer are disposed on the anti-oxidation conductive pattern of the first anti-oxidation conductive layer, and the anti-oxidation conductive pattern Both ends of the conductive pattern are connected to the first bridge pattern and the second bridge pattern respectively.
現將詳細地參考本發明的示範性實施例,示範性實施例的實例說明於附圖中。只要有可能,相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or similar parts.
應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件“上”或“連接到”另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時,不存在中間元件。如本文所使用的,“連接”可以指物理及/或電性連接。再者,“電性連接”或“耦合”可以是二元件間存在其它元件。It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" may mean the presence of other components between two components.
本文使用的“約”、“近似”、或“實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,“約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的“約”、“近似”或“實質上”可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。As used herein, "about," "approximately," or "substantially" includes the stated value and the average within an acceptable range of deviations from the particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and the A specific amount of error associated with a measurement (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the terms "about", "approximately" or "substantially" used herein may be used to select a more acceptable deviation range or standard deviation based on optical properties, etching properties or other properties, and one standard deviation may not apply to all properties. .
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be construed to have meanings consistent with their meanings in the context of the relevant technology and the present invention, and are not to be construed as idealistic or excessive Formal meaning, unless expressly defined as such herein.
圖1為本發明第一實施例之顯示裝置的仰視示意圖。圖2為本發明第一實施例之顯示裝置的剖面示意圖。圖2對應圖1的剖線A-A’。方向Z從基板110的背面114指向顯示面112。圖1示出沿著平行於方向Z的一方向所看到的顯示裝置10。FIG. 1 is a schematic bottom view of the display device according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the display device according to the first embodiment of the present invention. Figure 2 corresponds to the cross-section line A-A’ of Figure 1. The direction Z points from the
請參照圖1及圖2,顯示裝置10包括基板110,具有相對的顯示面112及背面114。在本實施例中,基板110的材質可為玻璃、石英、有機聚合物、或是不透光/反射材料(例如:晶圓、陶瓷、或其它可適用的材料)、或是其它可適用的材料。Referring to FIGS. 1 and 2 , the
顯示裝置10還包括畫素結構120,設置於基板110的顯示面112。舉例而言,在本實施例中,畫素結構120可包括畫素驅動電路(未繪示)、電性連接於畫素驅動電路的接墊(未繪示)以及與接墊接合的發光二極體元件(未繪示),但本發明不以此為限。The
顯示裝置10還包括金屬層140。金屬層140設置於基板110的背面114。在本實施例中,顯示裝置10還可選擇性地包括屏障保護層130,其中屏障保護層130設置於基板110的背面114上,而金屬層140設置於屏障保護層130上,但本發明不以此為限。在本實施例中,屏障保護層130的材料可為無機材料(例如:氧化矽、氮化矽、氮氧化矽、或上述至少二種材料的堆疊層)、有機材料或上述的組合。
金屬層140包括島狀測試墊142、走線L的第一段144及走線L的第二段146。走線L的第一段144及第二段146分別位於島狀測試墊142的兩側且與島狀測試墊142於結構上分離。走線L的第一段144與島狀測試墊142具有第一間隙g1。走線L的第二段146與金屬層140的島狀測試墊142具有第二間隙g2。在本實施例中,金屬層140還可選擇性包括測試墊148,其中走線L之第二段146的一端146a與島狀測試墊142具有第二間隙g2,而走線L之第二段146的另一端146b連接至測試墊148。The
設置於基板110之背面114的走線L電性連接至設置於基板110之顯示面112的畫素結構120。在本實施例中,設置於基板110之背面114的走線L可透過設置於基板110之側壁(未繪示)的側邊導線(未繪示)或貫穿基板110的導電物(未繪示)電性連接至設置於基板110之顯示面112的畫素結構120,但本發明不以此為限。在本實施例中,金屬層140的材料可為鋁、銅或其它金屬,但本發明不以此為限。The trace L provided on the
顯示裝置10還包括第一抗氧化導電層150,設置於基板110的背面114。在本實施例中,第一抗氧化導電層150可選擇性地設置於金屬層140上,其中金屬層140位於第一抗氧化導電層150與基板110的背面114之間,但本發明不以此為限。The
第一抗氧化導電層150包括第一橋接圖案154及第二橋接圖案156。第一橋接圖案154連接於走線L的第一段144與島狀測試墊142之間,以電性連接走線L的第一段144與島狀測試墊142。第二橋接圖案156連接於走線L的第二段146與島狀測試墊142之間,以電性連接走線L的第二段146與島狀測試墊142。相較於金屬層140,第一抗氧化導電層150較不易起氧化反應。舉例而言,在本實施例中,第一抗氧化導電層150的材質可為金屬氧化物,例如但不限於:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、其它合適的氧化物、或者是上述至少二者的堆疊層。The first anti-oxidation
在本實施例中,第一抗氧化導電層150還可選擇性地包括抗氧化導電圖案152,設置於金屬層140的島狀測試墊142上。第一橋接圖案154及第二橋接圖案156分別設置於抗氧化導電圖案152的兩側。在本實施例中,抗氧化導電圖案152可選擇性地與第一橋接圖案154及第二橋接圖案156於結構上分離,但本發明不以此為限。In this embodiment, the first anti-oxidation
在本實施例中,第一抗氧化導電層150還可選擇性地包括另一抗氧化導電圖案158,設置於金屬層140的測試墊148上,其中第二橋接圖案156位於抗氧化導電圖案152與另一抗氧化導電圖案158之間。在本實施例中,第二橋接圖案156與抗氧化導電圖案152及另一抗氧化導電圖案158可選擇性地於結構上分離,但本發明不以此為限。In this embodiment, the first anti-oxidation
顯示裝置10還包括絕緣層160,設置於第一抗氧化導電層150上,且具有一開口160a,其中絕緣層160的開口160a重疊於島狀測試墊142。在本實施例中,絕緣層160的開口160a更重疊於抗氧化導電圖案152。抗氧化導電圖案152覆蓋島狀測試墊142之與開口160a重疊的區域。在本實施例中,絕緣層160的開口160a可暴露抗氧化導電圖案152,但本發明不以此為限。The
在本實施例中,絕緣層160還可具有另一開口160b,其中絕緣層160的開口160a重疊於測試墊148。在本實施例中,絕緣層160的另一開口160b更重疊於另一抗氧化導電圖案158。另一抗氧化導電圖案158覆蓋測試墊148之與另一開口160b重疊的區域。在本實施例中,絕緣層160的材料可為無機材料(例如:氧化矽、氮化矽、氮氧化矽、或上述至少二種材料的堆疊層)、有機材料或上述的組合。在本實施例中,絕緣層160可包括多個絕緣子層,但本發明不以此為限。In this embodiment, the insulating
在本實施例中,顯示裝置10還包括可剝膠層170,設置於絕緣層160上,且具有一開口170a,其中可剝膠層170的開口170a重疊於島狀測試墊142。在本實施例中,可剝膠層170的開口170a、絕緣層160的開口160a與抗氧化導電圖案152重疊。在本實施例中,可剝膠層170的開口170a更重疊於第一抗氧化導電層150的第一橋接圖案154及第二橋接圖案156,而絕緣層160的開口160a位於第一橋接圖案154與第二橋接圖案156之間。在本實施例中,絕緣層160的開口160a位於可剝膠層170的開口170a內,且與可剝膠層170的開口170a相通。在本實施例中,可剝膠層170可填入絕緣層160的另一開口160b。在本實施例中,填入絕緣層160之另一開口160b的可剝膠層170可與另一抗氧化導電圖案158接觸,但本發明不以此為限。In this embodiment, the
值得注意的是,第一抗氧化導電層150的第一橋接圖案154和第二橋接圖案156除了用以橋接島狀測試墊142與走線L的第一段144及第二段146,第一抗氧化導電層150的第一橋接圖案154和第二橋接圖案156還用以分隔金屬層140的島狀測試墊142與金屬層140的走線L。如此一來,即便,水氣從未被可剝膠層170覆蓋的島狀測試墊142進入金屬層140,但第一抗氧化導電層150的第一橋接圖案154和第二橋接圖案156可阻斷水氣進入被可剝膠層170覆蓋的走線L內部。即使,金屬層140的島狀測試墊142因氧化而發生腐蝕現象,但所述腐蝕現象不易穿過第一抗氧化導電層150的第一橋接圖案154和第二橋接圖案156而蔓延至金屬曾40的走線L內部。藉此,顯示裝置10的品質及良率可提升。It is worth noting that, in addition to the
在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重述。It must be noted here that the following embodiments follow the component numbers and part of the content of the previous embodiments, where the same numbers are used to represent the same or similar elements, and descriptions of the same technical content are omitted. For descriptions of omitted parts, reference may be made to the foregoing embodiments and will not be repeated in the following embodiments.
圖3為本發明第二實施例之顯示裝置的剖面示意圖。圖3的顯示裝置10A與前述的顯示裝置10類似,兩者的差異在於:圖3的顯示裝置10A更包括第二抗氧化導電層180。FIG. 3 is a schematic cross-sectional view of a display device according to a second embodiment of the present invention. The
請參照圖3,第二抗氧化導電層180設置於金屬層140與基板110的背面114之間。詳細而言,在本實施例中,第二抗氧化導電層180可設置於屏障保護層130上,但本發明不以此為限。金屬層140的走線L的第一段144與金屬層140的島狀測試墊142具有第一間隙g1。金屬層140的走線L的第二段146與金屬層140的島狀測試墊142具有第二間隙g2。第二抗氧化導電層180具有分別重疊於第一間隙g1及第二間隙g2的第一區184及第二區186。第一抗氧化導電層150的第一橋接圖案154及第二橋接圖案156分別設置於第一間隙g1及第二間隙g2且分別電性連接至第二抗氧化導電層180的第一區184及第二區186。Referring to FIG. 3 , the second anti-oxidation conductive layer 180 is disposed between the
在本實施例中,第二抗氧化導電層180還可具有第三區182,重疊於金屬層140的島狀測試墊142;第三區182的兩端分別與第一區184及第二區186連接。相較於金屬層140,第二抗氧化導電層180較不易起氧化反應。舉例而言,在本實施例中,第二抗氧化導電層180的材質可為金屬氧化物,例如但不限於:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、其它合適的氧化物、或者是上述至少二者的堆疊層。In this embodiment, the second anti-oxidation conductive layer 180 may also have a
值得一提的是,在本實施例中,使用雙層的第一抗氧化導電層150及第二抗氧化導電層180橋接島狀測試墊142與走線L的第一段144及第二段146可降低阻值,進而提升顯示裝置10A的性能。It is worth mentioning that in this embodiment, a double-layered first anti-oxidation
圖4為本發明第三實施例之顯示裝置的剖面示意圖。圖4的顯示裝置10B與前述的顯示裝置10類似,兩者的差異在於:圖4之顯示裝置10B的第一抗氧化導電層150B的位置與前述之顯示裝置10的第一抗氧化導電層150的位置不同。FIG. 4 is a schematic cross-sectional view of a display device according to a third embodiment of the present invention. The
請參照圖4,具體而言,在本實施例中,第一抗氧化導電層150B位於金屬層140與基板110的背面114之間。在本實施例中,金屬層140的島狀測試墊142設置於第一抗氧化導電層150B的抗氧化導電圖案152B上,且抗氧化導電圖案152B的兩端分別與第一橋接圖案154B及第二橋接圖案156B連接。在本實施例中,是先形成第一抗氧化導電層150B,再形成金屬層140,其中金屬層140的島狀測試墊142與走線L的第一段144及第二段146是利用先形成的第一抗氧化導電層150B電性連接。Please refer to FIG. 4 . Specifically, in this embodiment, the first anti-oxidation
10、10A、10B:顯示裝置
110:基板
112:顯示面
114:背面
120:畫素結構
130:屏障保護層
140:金屬層
142:島狀測試墊
144:第一段
146:第二段
146a、146b:端
148:測試墊
150、150B:第一抗氧化導電層
152、152B:抗氧化導電圖案
154、154B:第一橋接圖案
156、156B:第二橋接圖案
158:另一抗氧化導電圖案
160:絕緣層
160a、170a:開口
160b:另一開口
170:可剝膠層
180:第二抗氧化導電層
182:第三區
184:第一區
186:第二區
A-A’:剖線
L:走線
g1:第一間隙
g2:第二間隙
Z:方向10, 10A, 10B: display device
110:Substrate
112:Display surface
114:Back
120: Pixel structure
130: Barrier protection layer
140:Metal layer
142:Island test pad
144: First paragraph
146:
圖1為本發明第一實施例之顯示裝置的仰視示意圖。 圖2為本發明第一實施例之顯示裝置的剖面示意圖。 圖3為本發明第二實施例之顯示裝置的剖面示意圖。 圖4為本發明第三實施例之顯示裝置的剖面示意圖。 FIG. 1 is a schematic bottom view of the display device according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of the display device according to the first embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of a display device according to a second embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a display device according to a third embodiment of the present invention.
10:顯示裝置 10:Display device
110:基板 110:Substrate
112:顯示面 112:Display surface
114:背面 114:Back
120:畫素結構 120: Pixel structure
130:屏障保護層 130: Barrier protection layer
140:金屬層 140:Metal layer
142:島狀測試墊 142:Island test pad
144:第一段 144: First paragraph
146:第二段 146:Second paragraph
146a、146b:端 146a, 146b: end
148:測試墊 148:Test pad
150:第一抗氧化導電層 150: First anti-oxidation conductive layer
152:抗氧化導電圖案 152: Anti-oxidation conductive pattern
154:第一橋接圖案 154: First bridge pattern
156:第二橋接圖案 156: Second bridge pattern
158:另一抗氧化導電圖案 158:Another antioxidant conductive pattern
160:絕緣層 160: Insulation layer
160a、170a:開口 160a, 170a: opening
160b:另一開口 160b:Another opening
170:可剝膠層 170: Peelable adhesive layer
A-A’:剖線 A-A’: section line
L:走線 L: routing
g1:第一間隙 g1: first gap
g2:第二間隙 g2: second gap
Z:方向 Z: direction
Claims (9)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111142968A TWI813503B (en) | 2022-11-10 | 2022-11-10 | Display apparatus |
| CN202310059388.1A CN115911080B (en) | 2022-11-10 | 2023-01-17 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111142968A TWI813503B (en) | 2022-11-10 | 2022-11-10 | Display apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI813503B true TWI813503B (en) | 2023-08-21 |
| TW202420583A TW202420583A (en) | 2024-05-16 |
Family
ID=86489871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111142968A TWI813503B (en) | 2022-11-10 | 2022-11-10 | Display apparatus |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115911080B (en) |
| TW (1) | TWI813503B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI230292B (en) * | 2002-12-09 | 2005-04-01 | Lg Philips Lcd Co Ltd | Array substrate having color filter on thin film transistor structure for LCD device and method of fabricating the same |
| US20090061575A1 (en) * | 2005-11-14 | 2009-03-05 | Hitachi Displays, Ltd. | Display device and fabrication method thereof |
| US20200212344A1 (en) * | 2018-12-28 | 2020-07-02 | Lg Display Co., Ltd. | Narrow bezel electroluminance lighting device |
| TW202228316A (en) * | 2021-01-14 | 2022-07-16 | 日商半導體能源研究所股份有限公司 | Display device manufacturing method, display device, display module and electronic device characterized by having the advantages of high definition and high resolution |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916242B (en) * | 2014-03-14 | 2018-11-13 | 群创光电股份有限公司 | Display device and test pad thereof |
| US10121843B2 (en) * | 2015-09-30 | 2018-11-06 | Apple Inc. | Corrosion resistant test lines |
| CN112838106B (en) * | 2019-11-22 | 2025-02-25 | 京东方科技集团股份有限公司 | Display substrate and display device |
| CN114203890B (en) * | 2021-12-10 | 2024-01-26 | Tcl华星光电技术有限公司 | Display panel and preparation method of display panel |
-
2022
- 2022-11-10 TW TW111142968A patent/TWI813503B/en active
-
2023
- 2023-01-17 CN CN202310059388.1A patent/CN115911080B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI230292B (en) * | 2002-12-09 | 2005-04-01 | Lg Philips Lcd Co Ltd | Array substrate having color filter on thin film transistor structure for LCD device and method of fabricating the same |
| US20090061575A1 (en) * | 2005-11-14 | 2009-03-05 | Hitachi Displays, Ltd. | Display device and fabrication method thereof |
| US20200212344A1 (en) * | 2018-12-28 | 2020-07-02 | Lg Display Co., Ltd. | Narrow bezel electroluminance lighting device |
| TW202228316A (en) * | 2021-01-14 | 2022-07-16 | 日商半導體能源研究所股份有限公司 | Display device manufacturing method, display device, display module and electronic device characterized by having the advantages of high definition and high resolution |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115911080B (en) | 2026-01-02 |
| CN115911080A (en) | 2023-04-04 |
| TW202420583A (en) | 2024-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI668856B (en) | Light emitting diode panel | |
| US20230329031A1 (en) | Organic light emitting display device | |
| TWI653771B (en) | Display device and test method thereof | |
| KR101600306B1 (en) | Array Substrate for Display Device and Manufacturing Method thereof | |
| CN105047606B (en) | The reworking method of the array base palte of display device and the array base palte by its formation | |
| CN110942715A (en) | flexible electronics | |
| CN112689913A (en) | Display device | |
| KR20180060710A (en) | Flexible display device | |
| US20200259050A1 (en) | Micro light emitting device display apparatus | |
| CN110890400A (en) | Display device | |
| TWI709222B (en) | Micro light emitting device display apparatus | |
| KR20180061856A (en) | Flexible display device | |
| KR20180036283A (en) | Flexible display device and method of manufacturing the same | |
| CN101320148B (en) | Display substrate, method of manufacturing the same and display device having the display substrate | |
| US11728352B2 (en) | Driving substrate and manufacturing method thereof and display device | |
| WO2021056549A1 (en) | Array substrate and method for manufacturing same, mother board, and display device | |
| TWI813503B (en) | Display apparatus | |
| TW202320320A (en) | Display apparatus | |
| KR20180036286A (en) | Flexible display device | |
| TW202001360A (en) | Electronic device | |
| US20240313007A1 (en) | Drive substrate and preparation method therefor, and light-emitting apparatus | |
| US12417720B2 (en) | Display device and multi-display | |
| TWI907106B (en) | Display apparatus | |
| CN115347089A (en) | Light emitting diode packaging structure, manufacturing method thereof and light emitting panel | |
| US20240274614A1 (en) | Display apparatus |