TWI812894B - Film-forming apparatus, film-forming method using same, and manufacturing method of electronic device - Google Patents

Abstract

The present invention provides a film forming device, a film forming method using the same, and a manufacturing method of an electronic device, which can more effectively suppress the temperature rise of a substrate and a mask. The film-forming apparatus has a chamber that maintains a vacuum inside, and a substrate adsorption means disposed inside the chamber to adsorb and hold the substrate. The film-forming material discharged from a film-forming source disposed inside the chamber passes through The mask forms a film on the substrate held by the substrate adsorption means. The film forming apparatus includes a cooling jacket disposed inside the chamber and radiatively cooling the substrate adsorption means.

Description

Film-forming device, film-forming method using the same, and manufacturing method of electronic device

The present invention relates to a film forming device, a film forming method using the same, and a manufacturing method of an electronic device.

Organic EL display devices (organic EL displays) are not only used in smartphones, televisions, and automotive displays, but their application fields have also expanded to VRHMD (Virtual Reality Head Mount Display), etc. In particular, displays used in VRHMDs require high-definition pixel patterns to reduce user glare. That is, further high resolution is required. In the production of organic EL display devices, when forming organic light-emitting elements (organic EL elements; OLEDs) constituting the organic EL display device, the film-forming material discharged from the film-forming source of the film-forming device passes through a mask on which a pixel pattern is formed. Cover and form a film on the substrate to form an organic layer or a metal layer.

In such a film formation process, in order to improve film formation accuracy, it is necessary to keep the relative position between the substrate and the mask as constant as possible. However, during the film formation process, the temperatures of the substrate and the mask rise due to radiant heat generated when the film formation source is heated. When the substrate and the mask are made of different materials, the relative positions of the substrate and the mask will deviate due to different thermal expansion rates of the substrate and the mask.

Conventionally, as a method of suppressing temperature rise of a substrate and a mask in a vacuum processing apparatus, a method such as that listed in Patent Document 1 is known. In Patent Document 1, a cooling medium is flowed through a cooling jacket provided in a vacuum evaporation device, whereby a substrate adsorption means fastened at a predetermined distance from the cooling jacket is radiatively cooled. [Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Laid-Open No. 2004-87869

[Problem to be solved by the invention]

However, a vacuum evaporation device is usually provided with an anti-adhesion plate that surrounds the substrate, mask, film-forming source, etc. in the vacuum chamber, thereby making it easy to remove the film-forming material adhering to places other than the substrate. Alternatively, a movable shutter may be installed between the film forming source and the mask to control film formation. In this case, the temperature of the anti-adhesion plate and the shield rises due to the radiant heat received from the film-forming source, and the substrate and the mask are also heated by the radiant heat generated from the anti-adhesion plate and the shield which have increased in temperature, and the substrate and the shield are heated. The relative position of the mask will be offset. Alternatively, radiant heat may be generated from the wall of the chamber or other structural members arranged in the chamber to heat the substrate and the mask. Therefore, if only the substrate adsorption means is cooled as described in Patent Document 1, there is a problem that the temperature rise of the substrate and the mask cannot be sufficiently suppressed.

Therefore, the present invention has been made in view of the above-mentioned problems of the prior art, and an object thereof is to more effectively suppress the temperature rise of the substrate and the mask. [Proposal to solve the problem]

A film forming apparatus according to an embodiment of the present invention includes a chamber that maintains a vacuum inside, and a substrate adsorbing means disposed inside the chamber to adsorb and hold a substrate. The film-forming material discharged from the source forms a film on the substrate held by the substrate adsorbing means through the mask. The film-forming device is provided with a cooling jacket arranged inside the chamber and radiatively cools the substrate adsorbing means. [Effects of the invention]

According to the present invention, it is possible to suppress the temperature rise of the substrate and the mask, and to dissipate and insulate heat from thermal interference from the film formation source and outside air.

Hereinafter, embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples merely illustrate the structures of the present invention, and do not limit the scope of the present invention to these structures. Furthermore, unless there are any limiting descriptions of the hardware structure and software structure, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the device in the following description, it does not mean that the scope of the present invention is limited thereto.

The present invention can be applied to an apparatus that deposits various materials on the surface of a substrate to form a film, and can be suitably applied to an apparatus that forms a thin film (material layer) of a desired pattern by vacuum evaporation.

As the material of the substrate, any material such as semiconductor (for example, silicon), glass, polymer material film, metal, etc. can be selected. The substrate can be, for example, a silicon wafer or a glass substrate with a film such as polyimide laminated on it. substrate. Furthermore, as the film-forming material, any material such as an organic material or a metallic material (metal, metal oxide) can be selected.

It should be noted that, in addition to a vacuum evaporation device based on heating evaporation, the present invention can also be applied to a film forming device including a sputtering device or a CVD (Chemical Vapor Deposition) device. Specifically, the technology of the present invention can be applied to manufacturing equipment of various electronic devices such as semiconductor devices, magnetic devices, and electronic components, or optical components. Specific examples of electronic devices include light-emitting elements, photoelectric conversion elements, touch panels, and the like. Among them, the present invention can be suitably applied to equipment for manufacturing organic light-emitting elements such as OLEDs and organic photoelectric conversion elements such as organic thin-film solar cells. It should be noted that the electronic device in the present invention also includes a display device (such as an organic EL display device) with a light-emitting element, a lighting device (such as an organic EL lighting device), and a sensor (such as an organic CMOS image sensor) with a photoelectric conversion element. sensor).

＜Film forming device＞ FIG. 1 is a schematic diagram showing the structure of a film forming apparatus 10 according to an embodiment of the present invention.

The film forming apparatus 10 heats the film forming material of the film forming source to evaporate or sublime it, and forms a film on the substrate W through the mask M. The relative position adjustment (alignment) of the substrate W and the mask M is performed by performing positional alignment using stage driving. A series of film forming processes from alignment to film formation are performed in the film forming device.

The film forming apparatus 10 is composed of a vacuum chamber 15 maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen. It includes a fine movement stage mechanism 12 for adjusting the position of the substrate W, a substrate adsorption means 14 for adsorbing and holding the substrate W, a mask mounting base 13 for supporting the mask M, and a coarse movement for adjusting the position of the mask M. The stage 131 and the film-forming source 11 heat and discharge the film-forming material.

The film forming apparatus 10 according to one embodiment may further include magnetic force applying means 16 for causing the metal mask M to be in close contact with the substrate W side by magnetic force.

By connecting a vacuum pump (not shown) to the vacuum chamber 15 of the film forming apparatus 10 according to one embodiment, the entire internal space of the vacuum chamber 15 can be maintained in a high vacuum state.

The fine movement stage mechanism 12 is a stage mechanism for adjusting the position of the substrate W or the substrate adsorption means 14, and can make the relative position of the substrate W with respect to the mask M below a threshold value. The fine movement table mechanism 12 includes a reference plate part 121 (first plate part) functioning as a support structure and a fine movement table part 122 (second plate part) functioning as a movable table.

The fine movement table mechanism 12 can adjust the position of the substrate W or the substrate adsorption means 14 with high precision, and therefore can be configured as a magnetic levitation table mechanism driven by a magnetic levitation linear motor. That is, for example, a coil that supplies electric current is provided as a stator on the reference plate portion 121 , and a permanent magnet is provided as a mover in a corresponding area of the fine motion plate portion 122 , so that the fine motion plate portion 122 is positioned relative to the reference plate portion. 121 moves in a magnetically suspended state, whereby the positions of the substrate adsorbing means 14 and the adsorbed substrate W mounted on one main surface (for example, the lower surface) of the micro-moving platen portion 122 can be adjusted with high precision. The micro-motion table mechanism 12 may further include a position measuring means for measuring the position of the micro-movement table part 122 , a self-weight compensation means for compensating the gravity acting on the micro-movement table part 122 , and a method for determining the position of the micro-movement table part 122 . Origin positioning means of origin position, etc.

The mask mounting base 13 is a support structure for mounting and fixing the mask M, and is provided on the coarse movement base 131 . Thereby, the relative position of the mask M with respect to the substrate W and the vertical distance can be adjusted.

The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate W, and is supported by the mask mounting base 13 . For example, the mask M used for manufacturing an organic EL display panel for VR-HMD includes a metal mask having a fine opening pattern corresponding to the RGB pixel pattern of the light-emitting layer of the organic EL element, that is, a precision metal mask. (Fine Metal Mask); an open mask (Open Mask) used to form the common layers of organic EL elements (hole injection layer, hole transport layer, electron transport layer, electron injection layer, etc.). The opening pattern of the mask M is defined by a partition pattern that does not allow particles of the film-forming material to pass. Moreover, the mask M is sometimes made of silicon.

The substrate adsorption means 14 is a means for adsorbing and holding the substrate W as a film-forming body that is fed into the apparatus. The substrate suction means 14 is provided on the fine movement platen portion 122 which is the movable table of the fine movement stage mechanism 12 . The substrate adsorption means 14 is, for example, an electrostatic chuck having a structure in which electrical circuits such as metal electrodes are embedded in a dielectric or insulator (for example, ceramic material) matrix. The electrostatic chuck as the substrate adsorbing means 14 may be a Coulomb force-type electrostatic chuck in which a relatively high-resistance dielectric is sandwiched between the electrode and the adsorbing surface, and adsorption is performed by the Coulomb force between the electrode and the adsorbed object. It may be a Johnson-Rabec force type in which a relatively low-resistance dielectric is sandwiched between an electrode and an adsorption surface, and adsorption occurs through the Johnson-Rabec force generated between the adsorption surface of the dielectric and the adsorbed object. The electrostatic chuck can also be a gradient force type electrostatic chuck that uses a non-uniform electric field to adsorb the adsorbed object. When the object to be adsorbed is a conductor or a semiconductor (silicon wafer), it is preferable to use a Coulomb force type electrostatic chuck or a Johnson-Rabeck force type electrostatic chuck. When the object to be adsorbed is an insulator such as glass, it is preferable to use an electrostatic chuck. Use gradient force type electrostatic chuck.

The film formation source 11 includes a crucible (not shown) that accommodates a film forming material for forming a film on the substrate W, a heater (not shown) for heating the crucible, and the like. The film formation source 11 is a point film formation source, a linear film formation source, or the like, and may have various structures depending on the application. During feeding and unloading of the substrate or during alignment, it is necessary to prevent the film-forming material from scattering onto the substrate, so a shutter 18 is usually provided.

The magnetic force applying means 16 is a means for drawing the metal mask M toward the substrate W side by magnetic force to bring it into close contact during film formation, and is provided so as to be able to move up and down in the vertical direction. For example, the magnetic force applying means 16 is composed of an electromagnet or a permanent magnet. An elevating mechanism 17 (moving mechanism) for elevating and lowering the magnetic force applying means 16 is provided on the upper outer side (atmosphere side) of the vacuum chamber 15 . When the vapor deposition position where the substrate W and the mask M are in contact is reached, the magnetic force applying means 16 is lowered and the mask M is pulled closer through the electrostatic chuck 14 and the substrate W, thereby bringing the substrate W and the mask M into close contact.

＜Film formation process＞ Hereinafter, a film forming method using the film forming apparatus of this embodiment will be described.

With the mask M supported on the mask mounting table 13 in the vacuum chamber 15 , the substrate W is fed into the vacuum chamber 15 . After the fed substrate W is sufficiently close to or in contact with the substrate adsorbing means 14, a substrate adsorbing voltage is applied to the substrate adsorbing means 14 to adsorb the back surface of the substrate W opposite to the film formation surface. The substrate W and the mask M are aligned by driving the fine movement stage mechanism 12 and the coarse movement stage 131 . When the deviation amount of the relative positions of the substrate W and the mask M is less than a predetermined threshold, the magnetic force applying means 16 is lowered to bring the substrate W and the mask M into close contact, and then the shutter 18 is opened to allow the film-forming material to form toward the substrate W. membrane. After the film is formed to a desired thickness, the magnetic force applying means 16 is raised to separate the substrate W from the mask M, and the substrate W is sent out.

In the above description, the film forming apparatus 10 has a so-called upward evaporation method (deposition rising) structure in which a film is formed with the film forming surface of the substrate W facing downward in the vertical direction. However, the film forming apparatus 10 is not limited to this. The substrate W may be disposed on the side surface of the vacuum chamber 15 in a vertically erected state, and film formation may be performed with the film formation surface of the substrate W being parallel to the direction of gravity.

＜Electrostatic chuck radiation cooling jacket＞ In FIG. 1 , a film formation source 11 is provided on the bottom surface of the vacuum chamber 15 . The film-forming source 11 has a discharge hole for the film-forming material, and the substrate W and the mask M are arranged at the direction of the discharge hole so that the film-forming surface faces the discharge hole. The mask M is provided with a pattern hole through which the film-forming material passes at a desired location, and the film-forming material discharged from the film-forming source 11 adheres to the substrate W in a desired pattern via the mask M.

The film formation source 11 heats the inside of the crucible to a high temperature close to 500° C. in order to discharge the film formation material. Therefore, the temperatures of the substrate W and the mask M rise due to the radiant heat from the film formation source 11 . Furthermore, the electrostatic chuck as the substrate adsorbing means 14 that adsorbs and holds the substrate W generates heat when energized, which is also a factor that causes the temperature of the substrate W and the mask M to rise.

In order to suppress the temperature rise of the substrate W and the mask M caused by such radiant heat from the film formation source 11 or the heat generated by the electrostatic chuck as the substrate adsorbing means 14, it may be considered that the electrostatic chuck as the substrate adsorbing means 14 that adsorbs the substrate W is used. A refrigerant pipe for heat dissipation is connected to the suction cup or the fine movement platen portion 122 on which the substrate suction means 14 is mounted. However, this method affects the alignment accuracy of the substrate W and the mask M. That is, the substrate W and the mask M can be aligned with high accuracy by finely driving the fine movement platen portion 122 equipped with the substrate adsorption means 14 in a state in which the substrate W is adsorbed. Therefore, directly connecting the refrigerant pipe for dissipating heat to the micro-motion platen portion 122 involved in driving the substrate will form a path for transmission of vibration and pulsation of the refrigerant, which is not preferable in terms of improving alignment accuracy.

Therefore, in one embodiment, a radiation cooling sheath is provided close to the electrostatic chuck as the substrate adsorption means 14, and the electrostatic chuck 14, the substrate W and the mask M close to it are cooled by radiation from the radiation cooling sheath. Cool together. By using radiation cooling, heat can be dissipated non-contactly to the object to be cooled. Therefore, the temperature rise of the substrate W and the mask M can be suppressed, and the vibration of the device or the pulsation of the refrigerant can be eliminated from causing the substrate W and the mask M to face each other. The main cause of positional deviation and defectiveness.

FIG. 2 is a cross-sectional view showing the electrostatic chuck radiation cooling sheath 21 disposed close to the electrostatic chuck 14 . The purpose of the electrostatic chuck radiation cooling sheath 21 is to cool the electrostatic chuck 14, the substrate W and the mask M in close proximity thereto by using radiation cooling without contact. The electrostatic chuck radiation cooling sheath 21 may be provided on the magnetic force applying means 16 that draws the mask M toward the substrate W side by magnetic force to bring it into close contact during film formation, or may be separately supported by a structure close to the electrostatic chuck 14 . When the magnetic force applying means 16 is provided, the substrate W and the mask M receive radiant heat from the film formation source 11 and are close to the electrostatic chuck 14 during film formation when the electrostatic chuck 14 generates heat. Therefore, radiation cooling is relatively difficult. Suit. Furthermore, the distance from the electrostatic chuck 14 can also be adjusted by the lifting mechanism 17 that raises and lowers the magnetic force applying means 16, so it is also effective in adjusting the amount of radiation cooling.

A refrigerant pipe 211 (refrigerant supply) is connected to the electrostatic chuck radiation cooling sheath 21 , and the refrigerant required for temperature control of the electrostatic chuck radiation cooling sheath 21 is supplied from outside the vacuum chamber 15 . The electrostatic chuck radiation cooling sheath 21 is made of a metal plate such as brass, and has a flow path in which the refrigerant supplied from the refrigerant pipe 211 circulates. Furthermore, the outer surface 21 a of the electrostatic chuck radiation cooling sheath 21 that is separated from the vacuum chamber wall and faces the vacuum chamber wall is mirror-finished to reduce the emissivity. This makes it possible to insulate the heat inflow of outside air that has passed through the vacuum chamber wall surface, and to reduce the refrigerant flow rate required for heat removal. On the other hand, the emissivity is improved by applying a DLC (diamond-like carbon) film to the inner surface 21 b of the electrostatic chuck radiation cooling sheath 21 that is separated from the electrostatic chuck 14 and faces the electrostatic chuck 14 . As a method of making the inner surface 21b have a higher emissivity than the outer surface 21a, in addition to the above-mentioned DLC film construction, a process of roughening the surface compared with the outer surface 21a or a process of forming a black surface may be applied. Examples of such surface treatment include blast processing, black plating, oxide film formation, thermal spraying, and the like.

When the electrostatic chuck radiation cooling sheath 21 is provided on the magnetic force applying means 16, the lower surface of the magnetic force applying means 16 becomes the inner surface 21b. Thereby, the amount of heat exchange between the electrostatic chuck radiation cooling sheath 21 and the electrostatic chuck 14 is increased, and the temperature rise of the electrostatic chuck 14, the substrate W, and the mask M is suppressed.

A temperature sensor 193 is provided on the inner surface 21b. This temperature sensor 193 is connected to an amplifier and a computer (not shown), and can calculate the radiation cooling amount for cooling the electrostatic chuck by measuring the temperature of the inner surface 21b. The refrigerant temperature is controlled by giving instructions to a cooler connected to the computer (not shown) so that the radiation cooling amount becomes a desired value. At this time, the temperature of the refrigerant may be directly controlled based on the temperature measurement result of the temperature sensor 193, or the flow rate of the supplied refrigerant may be controlled. As described above, by indirectly controlling the temperature of the electrostatic chuck using the temperature sensor 193, the temperatures of the substrate W and the mask M can also be suppressed.

It should be noted that as the material of the electrostatic chuck radiation cooling sheath 21, it only needs to meet the vacuum degree requirements of the vacuum evaporation device, and aluminum can also be used. Furthermore, stainless steel can also be used where more stringent vacuum requirements need to be met. In this case, the thermal conductivity of stainless steel is lower than that of brass and aluminum. Therefore, in order to achieve the same temperature, a more complex refrigerant flow path needs to be formed.

This embodiment includes the magnetic force applying means 16 for bringing the metal mask M into close contact with the substrate W side by magnetic force, but it is not limited to the above structure. For example, when the mask M is made of silicon, the magnetic force applying means 16 is not required. In this case, the lower surface of the electrostatic chuck radiation cooling sheath 21 becomes the inner surface 21b in FIG. 2 . Furthermore, the electrostatic chuck radiation cooling sheath 21 in this case may be supported by the lifting mechanism 17 used to raise and lower the magnetic force applying means 16 in the above embodiment, or may be supported by another structure provided close to the electrostatic chuck 14 .

＜Anti-adhesion plate radiation cooling jacket＞ In FIG. 1 , an anti-adhesion plate 191 is provided inside the vacuum chamber 15 to surround the film-forming source 11 , the substrate W and the mask M, so that the film-forming material discharged from the film-forming source 11 is directed toward the mask. Film-forming materials scattered in directions other than M adhere. The anti-adhesion plate 191 is made of a metal plate such as stainless steel or aluminum. When film formation is repeated, excess film-forming material will adhere to it. Therefore, it can be periodically disassembled and attached to the outside of the vacuum chamber 15 for cleaning. Construct.

As mentioned above, the anti-adhesion plate 191 also receives radiant heat from the film formation source 11 during film formation and its temperature rises, thereby becoming a secondary radiation heat source that affects the substrate W and the mask M. In one embodiment, in order to cool the secondary radiation heat from the anti-adhesion plate 191, an anti-adhesion plate radiation cooling jacket 192 is provided between the vacuum chamber wall surface and the anti-adhesion plate 191 in the vacuum chamber 15.

A refrigerant pipe (not shown) is connected to the anti-adhesion plate radiation cooling sheath 192 , and the refrigerant required for temperature control of the anti-adhesion plate radiation cooling sheath 192 is supplied from outside the vacuum chamber 15 . The anti-adhesion plate radiation cooling jacket 192 is made of a metal plate material such as brass, and has a flow path in which the refrigerant supplied from the refrigerant pipe circulates. Furthermore, the outer surface 192a of the anti-adhesion plate radiation cooling sheath 192 that faces the vacuum chamber wall surface is mirror-finished to reduce the emissivity. This makes it possible to insulate the heat inflow of outside air that has passed through the vacuum chamber wall surface, and to reduce the refrigerant flow rate required for heat removal. On the other hand, by applying a DLC film to the inner surface 192b of the anti-adhesion plate radiation cooling sheath 192 facing the anti-adhesion plate 191, the emissivity is improved. As a method of making the inner surface 192b have a higher emissivity than the outer surface 192a, in addition to the above-mentioned DLC film construction, a process of roughening the surface compared with the outer surface 192a or a process of forming a black surface may be applied. Examples of such surface treatment include blast processing, black plating, oxide film formation, thermal spraying, and the like. Thereby, the amount of heat exchange between the anti-adhesion plate radiation cooling jacket 192 and the anti-adhesion plate 191 is increased, and the temperature rise of the anti-adhesion plate 191 is suppressed.

In this way, by providing the anti-adhesion plate radiation cooling jacket 192 between the anti-adhesion plate 191 and the vacuum chamber wall, the influence of secondary radiation heat from the anti-adhesion plate to the substrate and the mask can be suppressed, and the influence of the secondary radiation heat from the vacuum chamber wall can be suppressed. The influence of radiant heat caused by changes in outside air temperature. Moreover, by adjusting the emissivity of the surface of the radiation cooling sheath 192 provided in different shapes, the heat input from the outside air is insulated. Therefore, compared with a structure in which a heat dissipation means is directly provided on the wall of the vacuum chamber, The flow rate of the refrigerant flowing to the cooling jacket 192 can be reduced, which is also advantageous in improving the temperature responsiveness of the anti-adhesion plate. Moreover, the anti-adhesion plate 191 is frequently detached and attached in order to clean and remove the adhered film-forming material. However, in this embodiment, radiation cooling is used and the cooling sheath 192 is provided separately from the anti-adhesion plate 191 . The maintainability of the device can also be greatly improved. Furthermore, it is also possible to prevent changes in emissivity caused by adhesion of the film-forming material to the anti-adhesion plate radiation cooling jacket 192 and removal of the adhered film-forming material.

A temperature sensor 193 is provided on the inner surface 192b of the anti-adhesion plate radiation cooling sheath 192. This temperature sensor 193 is connected to an amplifier and a computer (control unit) (not shown), and by measuring the temperature of the inner surface 192 b, the radiation cooling amount for cooling the anti-adhesion plate 191 can be calculated. The refrigerant temperature is controlled by giving instructions to a cooler (not shown) connected to the computer so that the radiation cooling amount becomes a desired value. At this time, the temperature of the refrigerant can be directly controlled, or the flow rate of the supplied refrigerant can be controlled. As described above, by controlling the temperature of the anti-adhesion plate 191 using the temperature sensor 193, secondary radiated heat from the anti-adhesion plate 191 toward the substrate W and the mask M can be suppressed.

It should be noted that as the material of the anti-adhesion plate radiation cooling sheath 192, it only needs to meet the vacuum degree requirements of the vacuum evaporation device, and aluminum can also be used. Furthermore, stainless steel can also be used where more stringent vacuum requirements need to be met. In this case, the thermal conductivity of stainless steel is lower than that of brass and aluminum. Therefore, in order to achieve the same temperature, a more complex refrigerant flow path needs to be formed.

＜Shutter cooling jacket＞ FIG. 3 is a cross-sectional view showing the shutter 18 having the shutter cooling jacket 183 . Generally, the film formation source 11 is provided with a shutter 18 that prevents the film formation material from scattering toward the substrate when the substrate is fed in and out or during alignment. However, although the shutter adhesion prevention plate 181 to which the film-forming material adheres in the shutter 18 can prevent the film-forming material from scattering, the temperature rises due to the radiation heat received from the film-forming source 11, which may cause the substrate W to The temperature of the mask M rises.

Therefore, by providing the shutter cooling jacket 183, the temperature rise of the shutter anti-adhesion plate 181 is suppressed. When the shutter cooling jacket 183 has an integral structure with the shutter anti-adhesion plate 181 , the radiant heat received from the film forming source 11 needs to be directly dissipated, so the flow rate of the refrigerant flowing to the shutter cooling jacket 183 increases. Therefore, as shown in FIG. 3 , by configuring the shutter cooling jacket 183 to be a separate structure from the shutter anti-adhesion plate 181 , the heat transfer from the shutter anti-adhesion plate 181 to the shutter cooling jacket 183 can be reduced. input volume, so the refrigerant flow rate can be reduced. By using a heat insulating material with high heat transfer resistance for the support member 182 of the shutter anti-adhesion plate 181, structural heat transfer from the shutter anti-adhesion plate 181 is suppressed. The shutter 18 in FIG. 3 is a mechanism assumed to be a gate valve. The shutter 18 is opened and closed by moving the support arm 184 in the left-right direction in FIG. 3 . However, the shutter 18 may also be opened and closed in a butterfly type. A structure that is restricted in the opening and closing directions.

A refrigerant pipe 185 is connected to the shield cooling jacket 183 , and the refrigerant required for temperature control of the shield cooling jacket 183 is supplied from outside the vacuum chamber 15 . The shield cooling jacket 183 is made of a metal plate such as brass, and has a flow path for circulating the refrigerant supplied from the refrigerant pipe 185 inside. Furthermore, the DLC film is applied to the outer surface 183a of the shield cooling jacket 183 that faces the substrate W and the mask M, thereby improving the emissivity. Thereby, the amount of heat exchange between the shutter cooling jacket 183 and the substrate W and the mask M is increased, and the substrate W and the mask M can be cooled when the shutter is closed. As a method of making the outer surface 183a have a higher emissivity than the inner surface 183b, in addition to the above-mentioned DLC film construction, a process of roughening the surface compared with the inner surface 183b or a process of forming a black surface may be applied. Examples of such surface treatment include blast processing, black plating, oxide film formation, thermal spraying, and the like. Furthermore, the inner surface 183b of the shutter cooling sheath 183 that faces the shutter anti-adhesion plate 181 is mirror-finished to reduce the emissivity. Thereby, the amount of heat exchange between the shutter cooling jacket 183 and the shutter anti-adhesion plate 181 is reduced, and the refrigerant flow rate flowing to the shutter cooling jacket 183 is reduced.

In this way, the shutter cooling sheath 183 can not only insulate the radiant heat from the film formation source 11 by adjusting (increasing or decreasing) the emissivity of the surface of the sheath 183, but can also be expected to insulate the substrate W and the mask during blocking. M has a cooling effect.

A temperature sensor 193 is provided on the outer surface 183a of the shutter cooling jacket 183. The temperature sensor 193 is connected to an amplifier and a computer (not shown), and by measuring the temperature of the outer surface 183a, the amount of radiation cooling required to cool the substrate W and the mask M when the shutter is closed can be calculated. The refrigerant temperature is controlled by giving instructions to a cooler (not shown) connected to the computer so that the radiation cooling amount becomes a desired value. At this time, the temperature of the refrigerant can be directly controlled, or the flow rate of the supplied refrigerant can be controlled. As described above, the use of the temperature sensor 193 prevents the mask from becoming a radiant heat source, thereby suppressing the temperatures of the substrate W and the mask M.

It should be noted that as the material of the shield cooling sheath 183, it only needs to meet the vacuum degree requirements of the vacuum evaporation device, and aluminum can also be used. Furthermore, stainless steel can also be used where more stringent vacuum requirements need to be met. In this case, the thermal conductivity of stainless steel is lower than that of brass and aluminum. Therefore, in order to achieve the same temperature, a more complex refrigerant flow path needs to be formed.

＜Structure cooling jacket＞ In order to support the substrate W and the mask M which are the objects to be cooled, a cooling jacket may be provided on the structure that is in contact with the outside air.

The reference plate portion 121 of the fine movement plate portion 122 is in contact with the outside air through the device structure. Therefore, it is affected by the outside air temperature. The temperature change of the reference plate portion 121 affects the micro-motion platen portion 122 as radiant heat and heat transfer. Therefore, the influence of the outside air is isolated by cooling the reference plate portion 121 . The structural cooling jacket may be provided separately so as to be in contact with the reference plate part 121 , or a refrigerant flow path may be provided in the reference plate part 121 .

The mask mounting base 13 for installing and fixing the mask M also has a portion in contact with the outside air, and is therefore affected by the temperature of the outside air. The temperature change of the mask mounting base 13 affects the mask M as radiant heat and heat transfer. Therefore, the influence of the outside air is blocked by cooling the mask mounting base 13 . This structural cooling jacket may be provided separately in contact with the mask mounting base 13 , or a refrigerant flow path may be provided in the mask mounting base 13 .

<Manufacturing method of electronic device> Next, an example of a method of manufacturing an electronic device using the film forming apparatus of this embodiment will be described. Hereinafter, the structure and manufacturing method of an organic EL display device are illustrated as an example of an electronic device.

First, the manufactured organic EL display device will be described. (a) of FIG. 4 shows an overall view of the organic EL display device 60, and (b) of FIG. 4 shows a cross-sectional structure of one pixel.

As shown in FIG. 4( a ), in the display area 61 of the organic EL display device 60 , a plurality of pixels 62 including a plurality of light-emitting elements are arranged in a matrix. Each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes, details of which will be described later. It should be noted that the pixel referred to here refers to the smallest unit capable of displaying a desired color in the display area 61 . In the organic EL display device of this embodiment, the pixel 62 is composed of a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B that exhibit mutually different light emission. The pixel 62 is usually composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element. However, it may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, as long as it is at least one color. Special restrictions.

FIG. 4(b) is a partial cross-sectional schematic diagram along line A-B of FIG. 4(a). The pixel 62 has an organic EL element having an anode 64 , a hole transport layer 65 , one of the light-emitting layers 66R, 66G, and 66B, an electron transport layer 67 , and a cathode 68 on the substrate 63 . Among them, the hole transport layer 65, the light-emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to organic layers. Furthermore, in this embodiment, the light-emitting layer 66R is an organic EL layer that emits red, the light-emitting layer 66G is an organic EL layer that emits green, and the light-emitting layer 66B is an organic EL layer that emits blue. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes also described as organic EL elements) that emit red, green, and blue colors, respectively. Furthermore, the anode 64 is formed separately for each light-emitting element. The hole transport layer 65, the electron transport layer 67, and the cathode 68 may be formed in common with the plurality of light-emitting elements 62R, 62G, and 62B, or may be formed for each light-emitting element. It should be noted that in order to prevent the anode 64 and the cathode 68 from being short-circuited due to impurities, an insulating layer 69 is provided between the anodes 64 . Furthermore, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 70 for protecting the organic EL element from moisture or oxygen is provided.

In (b) of FIG. 4 , the hole transport layer 65 or the electron transport layer 67 is represented by one layer, but it may be formed of a plurality of layers including a hole blocking layer or an electron blocking layer depending on the structure of the organic EL display element. . Furthermore, a hole injection layer having an energy band structure that can smoothly inject holes from the anode 64 to the hole transport layer 65 may be formed between the anode 64 and the hole transport layer 65 . Likewise, an electron injection layer may be formed between the cathode 68 and the electron transport layer 67 .

Next, an example of a method of manufacturing an organic EL display device will be described in detail.

First, a substrate 63 on which a circuit (not shown) for driving an organic EL display device and an anode 64 are formed is prepared.

An acrylic resin is formed by spin coating on the substrate 63 on which the anode 64 is formed, and the acrylic resin is patterned by photolithography to form openings in the portion where the anode 64 is formed, thereby forming the insulating layer 69 . This opening corresponds to the light-emitting area where the light-emitting element actually emits light.

The substrate 63 with the patterned insulating layer 69 is sent to the first organic material film forming device, the substrate is held by an electrostatic chuck, and the hole transport layer 65 is formed as a common layer on the anode 64 in the display area. The hole transport layer 65 is formed by vacuum evaporation. In fact, the hole transport layer 65 is formed to have a larger size than the display area 61 and therefore does not require a high-definition mask.

Next, the substrate 63 with the hole transport layer 65 formed thereon is sent to the second organic material film forming apparatus and held by an electrostatic chuck. The substrate and the mask are aligned, and the mask is attracted by a magnet plate and brought into close contact with the substrate. Then, a red-emitting layer 66R is formed on the portion of the substrate 63 where the red-emitting element is arranged.

In the same manner as the formation of the luminescent layer 66R, the green luminescent layer 66G is formed by the third organic material film forming apparatus, and the blue luminescent layer 66B is formed by the fourth organic material film forming apparatus. After the film formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display area 61 using the fifth film forming device. The electron transport layer 67 is formed as a common layer for the three-color light-emitting layers 66R, 66G, and 66B.

The substrate with the electron transport layer 67 formed thereon is moved in a metallic vapor deposition material film forming apparatus to form a cathode 68 .

Then, the protective layer 70 is formed by moving to a plasma CVD device, and the organic EL display device 60 is completed.

If the substrate 63 on which the insulating layer 69 is patterned is sent to the film forming apparatus until the formation of the protective layer 70 is completed, if it is exposed to an atmosphere containing moisture or oxygen, the light-emitting layer composed of the organic EL material may be damaged. Deteriorated by moisture or oxygen. Therefore, in this example, the substrate is transported in and out between the film forming apparatuses in a vacuum atmosphere or an inert gas atmosphere.

The above-described embodiment is merely an example of the present invention, and the present invention is not limited to the structure of the above-described embodiment, and can be appropriately modified within the scope of the technical idea.

10: Vacuum evaporation device 11: Film forming source 12: Micro movement table mechanism 121: Reference plate part 122: Micro-moving platen part 13: Mask holding table 14: Substrate adsorption means (electrostatic chuck) 15: Vacuum chamber 18: Masker 181: Shutter anti-adhesion plate 183: Shutter cooling jacket 21: Electrostatic chuck radiation cooling jacket 191: Anti-adhesion plate 192: Anti-adhesion plate radiation cooling jacket 193:Temperature sensor 185,211:Refrigerant piping

[Fig. 1] is a schematic cross-sectional view of a film forming apparatus according to an embodiment. [Fig. 2] is a schematic cross-sectional view of an electrostatic chuck radiation cooling jacket according to one embodiment. [Fig. 3] is a schematic cross-sectional view of the shutter cooling jacket according to one embodiment. [Fig. 4] is a schematic diagram showing an electronic device.

10: Vacuum evaporation device

11: Film forming source

12: Micro movement table mechanism

13: Mask holding table

14: Substrate adsorption means (electrostatic chuck)

15: Vacuum chamber

16: Magnetic force application means

17:Lifting mechanism

18: Masker

121: Reference plate part

131: Coarse motion table

122: Micro-moving platen part

191: Anti-adhesion plate

192: Anti-adhesion plate radiation cooling jacket

192a: Outside surface

192b: medial surface

193:Temperature sensor

M: mask

W: substrate

Claims (21)

A film forming device, which has: a chamber, the inside of which is maintained in a vacuum; and a substrate adsorption means, which is arranged inside the chamber, adsorbs and holds the substrate, and the film forming device will be arranged inside the chamber. The film-forming material discharged from the film-forming source is film-formed through the mask on the substrate held by the substrate adsorption means, and the film-forming device is equipped with: a radiation cooling jacket of the substrate adsorption means, which is arranged inside the chamber to The substrate adsorption means performs radiation cooling; an anti-adhesion plate is arranged between the first wall constituting the chamber and the film-forming source; an anti-adhesion plate radiation cooling sheath is arranged between the first wall and the anti-adhesion Between the plates, the anti-adhesion plate is radiatively cooled; a shielder is arranged between the film forming source and the shield; and a shielder cooling jacket is used to radiately cool the shielder. The film forming apparatus according to claim 1, further comprising: magnetic force applying means that draws the mask toward the substrate held by the substrate adsorbing means; and a moving mechanism that causes the magnetic force applying means to face the substrate adsorbing means Move; the radiation cooling sheath of the aforementioned substrate adsorption means passes through the aforementioned moving mechanism Move together with the aforementioned magnetic force applying means. The film forming apparatus according to claim 1 or 2, wherein the substrate adsorbing means radiation cooling jacket has a first surface facing away from the substrate adsorbing means and a second surface facing away from a wall constituting the chamber. The film forming apparatus according to claim 3, wherein the emissivity of the first surface is greater than the emissivity of the second surface. The film forming apparatus according to claim 1, wherein the radiation cooling sheath of the substrate adsorbing means is not in contact with the substrate adsorbing means. The film forming apparatus according to claim 1, wherein the substrate adsorbing means is an electrostatic chuck. The film forming apparatus according to claim 3, wherein the substrate adsorption means radiation cooling jacket has a refrigerant flow path through which refrigerant flows, and the film forming apparatus has a refrigerant supply means for supplying refrigerant to the refrigerant flow path from outside the chamber. . The film forming apparatus according to claim 7, wherein a temperature sensor is provided in the radiation cooling sheath of the substrate adsorbing means. The film forming apparatus according to claim 8, wherein the temperature sensor is provided on the first surface. The film forming apparatus according to claim 8, including a control unit that controls, based on the temperature measurement result of the temperature sensor, At least one of the temperature and flow rate of the refrigerant. The film forming apparatus according to claim 1, wherein the shield cooling jacket has a fifth surface facing the shield and a sixth surface facing the shield. The film forming apparatus according to claim 11, wherein the emissivity of the fifth surface is greater than the emissivity of the sixth surface. A film forming device, which has: a chamber, the inside of which is maintained in a vacuum; and a substrate adsorption means, which is arranged inside the chamber, adsorbs and holds the substrate, and the film forming device will be arranged inside the chamber. The film-forming material discharged from the film-forming source is film-formed through the mask on the substrate held by the substrate adsorption means, and the film-forming device is equipped with: a radiation cooling jacket of the substrate adsorption means, which is arranged inside the chamber to The substrate adsorbing means performs radiation cooling; a micro-moving platen portion is movable in a state where the substrate adsorbing means is mounted; a reference plate portion magnetically levitates the micro-moving platen portion; and a structure radiation cooling sheath, which It is provided on the said reference plate part, and performs radiation cooling on the said fine movement platen part. A film forming device, which has: a chamber, the inside of which is maintained as a vacuum; and a substrate adsorption means, which is arranged inside the aforementioned chamber to adsorb and maintain the Holding the substrate, the film-forming device performs film-forming on the substrate held by the substrate adsorption means through a mask on the film-forming material discharged from the film-forming source arranged inside the chamber, and the film-forming device is provided with: anti-adhesion A plate arranged between the film-forming source and the first wall constituting the chamber; and an anti-adhesion plate radiation cooling jacket arranged between the first wall and the anti-adhesion plate. Radiation cooling is performed, and the anti-adhesion plate radiation cooling jacket has a third surface facing away from the anti-adhesion plate and a fourth surface facing away from the first wall. The film forming apparatus according to claim 14, wherein the emissivity of the third surface is greater than the emissivity of the fourth surface. A film forming method that uses the film forming device according to any one of claims 1 to 15 to form a film on a substrate with a film forming material through a mask inside a chamber of the film forming device, including: A process in which a substrate adsorption means arranged inside the chamber adsorbs the back surface of the substrate opposite to the film-forming surface; and the film-forming material discharged from the film-forming source is passed through the mask to form a film on the film-forming surface of the substrate. The procedure; and the procedure of radiatively cooling the substrate adsorption means through a radiation cooling jacket of the substrate adsorption means arranged inside the chamber. A method of manufacturing an electronic device using the film forming method according to claim 16 to manufacture the electronic device. A film forming device, which has: a chamber, the inside of which is maintained in a vacuum; and a substrate adsorption means, which is arranged inside the chamber, adsorbs and holds the substrate, and the film forming device will be arranged inside the chamber. The film-forming material discharged from the film-forming source is film-formed through the mask on the substrate held by the substrate adsorption means, and the film-forming device is equipped with: a radiation cooling jacket of the substrate adsorption means, which is arranged inside the chamber to The substrate adsorption means performs radiation cooling; a shield is arranged between the film forming source and the shield; and a shield cooling jacket performs radiation cooling on the shield. The film forming apparatus according to claim 18, further comprising: magnetic force application means that draws the mask toward the substrate held by the substrate adsorption means; and a moving mechanism that relatively moves the magnetic force application means with respect to the substrate adsorption means ; The radiation cooling sheath of the substrate adsorption means moves through the aforementioned moving mechanism together with the aforementioned magnetic force applying means. A film forming method that uses the film forming apparatus according to claim 18 or 19 to form a film forming material onto a substrate through a mask inside a chamber of the film forming apparatus, comprising: A process in which the substrate adsorption means inside the chamber adsorbs the back surface of the substrate opposite to the film-forming surface; A process of forming a film on the film-forming surface of the substrate by passing the film-forming material discharged from the film-forming source through the mask; and irradiating the substrate adsorbing means through a radiation cooling sheath of the substrate adsorbing means arranged inside the chamber. Cooling procedure. A method of manufacturing an electronic device using the film forming method according to claim 20 to manufacture the electronic device.