TWI812239B - Light-emitting module - Google Patents
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Abstract
Description
本發明是有關於一種發光模組。The invention relates to a light emitting module.
微型發光二極體(micro light-emitting diode, micro-LED)的輸出光形對於整個裝置的光學設計具有巨大的影響。應用在不同裝置中,為了達到特殊需求,需要讓輸出光形為特定形狀。舉例而言,在顯示裝置中,為了使亮度提高,需要將光源的光形變成準直光。在照明裝置中,為了使亮度均勻,會將光形調整為均勻分布。在目前的光學裝置中,可以使用其他光學元件,如增加透鏡等,或是增加光學結構,以實現光形調變之目的。The output light shape of micro light-emitting diodes (micro-LEDs) has a huge impact on the optical design of the entire device. When used in different devices, in order to meet special requirements, the output light shape needs to be a specific shape. For example, in a display device, in order to increase the brightness, the light from the light source needs to be shaped into collimated light. In lighting devices, in order to make the brightness uniform, the light shape is adjusted to be evenly distributed. In current optical devices, other optical elements, such as adding lenses, etc., or adding optical structures can be used to achieve the purpose of light shape modulation.
以現今技術要實現輸出光形調變,主要有幾種方法。應用在大型光路上,可使用多個動件,如面鏡、透鏡、空間濾波器等。其優點是方便進行調整,有利於元件開發初期以光路做為實驗對象進行階段測試。然而,缺點則是尺寸過大不便於LED應用,且大型光路易受環境其他因素影響,如受到粉塵、外在光源等的影響。或者,將大型光路微縮,縮小系統大小且保有其改變光形之能力,或是在元件製作中加上微結構。但目前技術中,需要使用多個光學元件,或是設計較複雜且製程繁瑣而不易於光形的調整。There are several main methods to achieve output light shape modulation with current technology. Applied to large optical paths, multiple moving parts can be used, such as mirrors, lenses, spatial filters, etc. Its advantage is that it is easy to adjust, and it is conducive to using the optical path as the experimental object for stage testing in the early stages of component development. However, the disadvantage is that the size is too large for LED applications, and large lights are easily affected by other environmental factors, such as dust, external light sources, etc. Alternatively, the large optical path can be miniaturized to reduce the size of the system while retaining its ability to change the light shape, or microstructures can be added to component manufacturing. However, current technology requires the use of multiple optical components, or the design is complex and the manufacturing process is cumbersome, making it difficult to adjust the light shape.
“先前技術”段落只是用來幫助了解本發明內容,因此在“先前技術”段落所揭露的內容可能包含一些沒有構成所屬技術領域中具有通常知識者所知道的習知技術。在“先前技術”段落所揭露的內容,不代表該內容或者本發明一個或多個實施例所要解決的問題,在本發明申請前已被所屬技術領域中具有通常知識者所知曉或認知。The "prior art" paragraph is only used to help understand the content of the present invention. Therefore, the content disclosed in the "prior art" paragraph may contain some conventional technologies that do not constitute common knowledge to those with ordinary knowledge in the technical field. The content disclosed in the "Prior Art" paragraph does not mean that the content or the problems to be solved by one or more embodiments of the present invention have been known or recognized by those with ordinary knowledge in the technical field before the application of the present invention.
本發明提供一種發光模組,可藉由簡單的架構達到各種光形的調變,且具有製造良率高的優點。The present invention provides a light-emitting module that can achieve modulation of various light shapes through a simple structure and has the advantage of high manufacturing yield.
本發明的其他目的和優點可以從本發明所揭露的技術特徵中得到進一步的了解。Other objects and advantages of the present invention can be further understood from the technical features disclosed in the present invention.
為達上述之一或部份或全部目的或是其他目的,本發明的實施例提供一種發光模組,包括透光基板、至少一透光填充單元及至少一發光元件。透光基板包括設置平面與出光面,透光基板具有至少一柱狀凹陷。此至少一柱狀凹陷從設置平面朝向出光面的方向上凹陷。此至少一透光填充單元對應填充於此至少一柱狀凹陷中。此至少一發光元件設置於設置平面上,且對應配置於此至少一透光填充單元上,其中此至少一透光填充單元的背對此至少一發光元件的表面為平面或凹面。每一此至少一發光元件在設置平面具有發光元件投影範圍,每一此至少一透光填充單元在設置平面具有透光單元投影範圍,其中此至少一發光元件投影範圍的幾何中心與對應的此至少一透光單元投影範圍的幾何中心重疊。In order to achieve one, part or all of the above objects or other objects, embodiments of the present invention provide a light-emitting module including a light-transmitting substrate, at least one light-transmitting filling unit and at least one light-emitting element. The light-transmitting substrate includes a setting plane and a light-emitting surface, and the light-transmitting substrate has at least one columnar depression. The at least one columnar recess is recessed in a direction from the installation plane toward the light-emitting surface. The at least one light-transmitting filling unit is correspondingly filled in the at least one columnar depression. The at least one light-emitting element is disposed on the arrangement plane and is correspondingly arranged on the at least one light-transmitting filling unit, wherein the surface of the at least one light-transmitting filling unit facing away from the at least one light-emitting element is flat or concave. Each of the at least one light-emitting element has a projection range of the light-emitting element on the installation plane, and each of the at least one light-transmitting filling unit has a projection range of the light-transmitting unit on the installation plane, wherein the geometric center of the projection range of the at least one light-emitting element is consistent with the corresponding The geometric centers of the projection range of at least one light-transmitting unit overlap.
在本發明的一實施例中,至少一柱狀凹陷為多個排成陣列的凹陷,至少一透光填充單元為對應於這些凹陷的多個排成陣列的透光填充單元,且至少一發光元件為對應於這些透光填充單元的多個排成陣列的發光元件。In an embodiment of the present invention, at least one columnar recess is a plurality of recesses arranged in an array, at least one light-transmitting filling unit is a plurality of light-transmitting filling units arranged in an array corresponding to the recesses, and at least one light-emitting unit is arranged in an array. The element is a plurality of light-emitting elements arranged in an array corresponding to these light-transmitting filling units.
在本發明的一實施例中,透光填充單元的折射率小於透光基板的折射率。In an embodiment of the present invention, the refractive index of the light-transmitting filling unit is smaller than the refractive index of the light-transmitting substrate.
在本發明的一實施例中,發光模組更包括緩衝層,配置於至少一透光填充單元以及至少一發光元件之間,且緩衝層的折射率大於或等於透光基板的折射率。In one embodiment of the present invention, the light-emitting module further includes a buffer layer disposed between at least one light-transmitting filling unit and at least one light-emitting element, and the refractive index of the buffer layer is greater than or equal to the refractive index of the light-transmitting substrate.
在本發明的一實施例中,至少一透光填充單元的折射率落在1.0至1.8的範圍內,透光基板的折射率落在1.5至2.0的範圍內,且緩衝層的折射率落在1.5至3.5的範圍內。In an embodiment of the present invention, the refractive index of at least one light-transmissive filling unit falls in the range of 1.0 to 1.8, the refractive index of the light-transmissive substrate falls in the range of 1.5 to 2.0, and the refractive index of the buffer layer falls in the range of 1.0 to 1.8. Within the range of 1.5 to 3.5.
在本發明的一實施例中,發光模組更包括至少一量子點層,配置於透光基板的出光面上,且與至少一發光元件對應配置,量子點層的折射率是落在1.2至1.8的範圍內。In one embodiment of the present invention, the light-emitting module further includes at least one quantum dot layer, which is disposed on the light exit surface of the light-transmitting substrate and is disposed corresponding to at least one light-emitting element. The refractive index of the quantum dot layer falls between 1.2 and Within the range of 1.8.
在本發明的一實施例中,至少一柱狀凹陷為圓柱狀凹陷或多邊形柱狀凹陷。In an embodiment of the present invention, at least one columnar depression is a cylindrical depression or a polygonal columnar depression.
在本發明的一實施例中,至少一透光填充單元的材質為聚合物。In an embodiment of the present invention, the material of at least one light-transmitting filling unit is polymer.
在本發明的一實施例中,至少一透光填充單元的外徑大於或等於至少一發光元件的外徑。In an embodiment of the present invention, the outer diameter of at least one light-transmitting filling unit is greater than or equal to the outer diameter of at least one light-emitting element.
在本發明的一實施例中,至少一透光填充單元的頂面與設置平面為共平面,且至少一透光填充單元的高度是落在0.1微米至30微米的範圍內。In an embodiment of the present invention, the top surface of the at least one light-transmitting filling unit is coplanar with the arrangement plane, and the height of the at least one light-transmitting filling unit falls within the range of 0.1 micron to 30 micron.
在本發明的實施例的發光模組中,由於透光基板具有柱狀凹陷,且透光填充單元對應填充於柱狀凹陷中,因此發光模組的製程精度較容易控制,具有較高的良率。此外,在本發明的實施例的發光模組中,可以藉由調整透光基板、透光填充單元或其他光學膜層的折射率或材料,以及藉由調整透光填充單元的表面的曲率,來達到各種光形的調變。In the light-emitting module according to the embodiment of the present invention, since the light-transmitting substrate has columnar recesses, and the light-transmitting filling units are correspondingly filled in the columnar recesses, the process accuracy of the light-emitting module is easier to control and has higher quality. Rate. In addition, in the light-emitting module according to the embodiment of the present invention, the refractive index or material of the light-transmitting substrate, the light-transmitting filling unit or other optical film layers can be adjusted, and by adjusting the curvature of the surface of the light-transmitting filling unit, To achieve the modulation of various light shapes.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本發明。The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. Directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, etc., are only for reference to the directions in the attached drawings. Accordingly, the directional terms used are illustrative and not limiting of the invention.
圖1A是本發明的一實施例的發光模組的局部剖面示意圖,而圖1B是圖1A的發光模組的上視示意圖。請參照圖1A與圖1B,本實施例的發光模組100包括透光基板110、至少一透光填充單元120(圖1A中是以多個透光填充單元120為例)及至少一發光元件200(圖1A中是以多個發光元件200為例),至少一透光填充單元120的數量與至少一發光元件200的數量例如為相同。透光基板110包括設置平面112與出光面114,設置平面112與出光面114彼此相對。透光基板110具有至少一柱狀凹陷116(在圖1A中是以多個柱狀凹陷116為例)。柱狀凹陷116從設置平面112朝向出光面114的方向上凹陷。透光填充單元120對應填充於柱狀凹陷116中。在本實施例中,透光填充單元120填滿柱狀凹陷116,意即透光填充單元120在設置平面112的投影區域與對應的柱狀凹陷116在設置平面112的投影區域重疊且面積相同。FIG. 1A is a partial cross-sectional schematic view of a light-emitting module according to an embodiment of the present invention, and FIG. 1B is a top view of the light-emitting module of FIG. 1A . Please refer to FIGS. 1A and 1B . The light-
發光元件200設置於設置平面112的一側,且對應配置於透光填充單元120上。在本實施例中,透光填充單元120的背對發光元件200的表面122為凹面。由於透光填充單元120是填充於柱狀凹陷116中,因此透光填充單元120的表面122的形狀與柱狀凹陷116的底部的形狀相同。在另一實施例中,如圖2所繪示,發光模組100b的透光填充單元120b的背對發光元件200的表面122b也可以是平面。在本實施例中,每一發光元件200在設置平面112具有發光元件投影範圍A1(即正投影範圍),每一透光填充單元120在設置平面112具有透光單元投影範圍A2(即正投影範圍),其中發光元件投影範圍A1的幾何中心C1與對應的透光單元投影範圍A2的幾何中心C2重疊,其中此處的重疊是指完全重疊(即重合)或兩者的差距是發光元件投影範圍A1的寬度的5%以內。The light-emitting
在本實施例中,發光元件200例如為微型發光二極體,其可包括第一型半導體層210、發光層220、第二型半導體層230、透明導電層240、第一電極250、第二電極260、絕緣層270及反射層280。第一型半導體層210配置於透光填充單元120上,發光層220配置於第一型半導體層210上,第二型半導體層230配置於發光層220上,透明導電層240配置於第二型半導體層230上,第一電極250電性連接至第一型半導體層210,第二電極260透過透明導電層240電性連接第二型半導體層230。反射層280覆蓋各半導體層的側面及透明導電層240的部分頂面,而絕緣層270隔開各半導體層與反射層280,且隔開透明導電層240與反射層280。在本實施例中,發光模組100更包括緩衝層(buffer layer)130,配置於透光填充單元120以及發光元件200之間。在本實施例中,第一型為N型,第二型為P型。然而,在其他實施例中,也可以是第一型為P型,而第二型為N型。發光層220例如為量子井層或多重量子井層。第一型半導體層210、發光層220及第二型半導體層230的材質可以是三-五族半導體、二-六族半導體或其他適當的半導體。在本實施例中,第一型半導體層210例如為N型氮化鎵層,第二型半導體層230例如為P型氮化鎵層,但本發明不以此為限。此外,透明導電層240的材質例如為氧化銦錫或其他適當的透明導電材料。In this embodiment, the light-emitting
當在第一電極250與第二電極260施加順向電壓時,發光層會發出光222。部分的光222會往圖1A的下方發出,而另一部分往上發出或往其他方向發出的光222則會被反射層280往下反射,因此光222會經由緩衝層130、透光填充單元120與透光基板110的折射作用後,從透光基板110的出光面114出射。When a forward voltage is applied to the
在本實施例的發光模組100中,由於透光基板110具有柱狀凹陷116,且透光填充單元120對應填充於柱狀凹陷116中,因此發光模組100的製程精度較容易控制,具有較高的良率。舉例而言,柱狀凹陷116可以由半導體製程(例如微影製程)所形成,而半導體製程具有高精確度的優點,透光填充單元120在填充於柱狀凹陷116後,便能夠確保透光填充單元120的位置與形狀的高精確度。因此,發光模組100可具有較高的良率。相對於將透鏡陣列貼附於微型發光二極體上的製程風險較高,易有對位不準確的問題,本實施例利用半導體製程形成柱狀凹陷116,然後再將透光填充單元120填充於柱狀凹陷116中,便能夠免除對位不準確的製程風險。此外,本實施例透過半導體製程製作,製程與結構設計相對簡單,是較容易進行的技術。In the light-emitting
此外,在本實施例的發光模組100中,可以藉由調整透光基板110、透光填充單元120或其他光學膜層(例如緩衝層130)的折射率或材料,以及藉由調整透光填充單元120的表面122的曲率,來達到各種光形的調變,例如調整呈均勻的光形以供照明使用,或調整成準直或較為集中的光形以供顯示使用。In addition, in the light-emitting
在本實施例中,上述至少一柱狀凹陷116為多個排成陣列的凹陷(如圖1B所示,柱狀凹陷116的數量為6個且排列成2×3的陣列),上述至少一透光填充單元120為對應於這些凹陷的多個排成陣列的透光填充單元120,且上述至少一發光元件200為對應於這些透光填充單元120的多個排成陣列的發光元件200,如圖1A與圖1B所繪示。在本實施例中,柱狀凹陷116為圓柱狀凹陷,其上視圖如圖1B所繪示的透光填充單元120的上視圖。然而,在另一實施例中,如圖1C所繪示,柱狀凹陷116a可為多邊形柱狀凹陷,在圖1C中例如是正方形柱狀凹陷,其上視圖如圖1C所繪示的透光填充單元120a的上視圖。此外,在圖1B與圖1C的實施例中,發光元件200的上視圖是以多邊形(例如正方形)為例,然而,在其他實施例中,發光元件200的上視圖也可以是圓形或其他適當的幾何形狀。此外,柱狀凹陷116的上視圖也可以是其他適當的幾何形狀。In this embodiment, the at least one
在本實施例中,透光填充單元120的外徑D2大於或等於發光元件200的外徑D1,透光填充單元120的外徑D2例如為透光填充單元120的直徑,發光元件200的外徑D1例如為發光元件200的最大寬度。意即,發光元件200的發光元件投影範圍A1完全落在透光填充單元120的透光單元投影範圍A2內。因此,透光填充單元120可以充分接收來自發光元件200的光222。在其他實施例中,若受到製程條件的限制,發光元件200的發光元件投影範圍A1可部分落在透光填充單元120的透光單元投影範圍A2內,其中兩者重疊的部分區域至少為發光元件投影範圍A1區域的90%以上。此外,在本實施例中,透光填充單元120具有頂面124,頂面124與透光填充單元120的表面122彼此相對。透光填充單元120的頂面124與設置平面112為共平面,且透光填充單元120的高度H1是落在0.1微米至30微米的範圍內,其中高度H1的方向垂直於設置平面112,高度H1例如小於透光基板110的厚度(垂直於設置平面112的方向的厚度)。In this embodiment, the outer diameter D2 of the light-transmitting
在本實施例中,透光填充單元120的折射率必需小於透光基板110的折射率,因此,當光222通過透光填充單元120的表面122時,會相當於通過凸透鏡的凸面,而使得光222被匯聚,而達到較為集中或準直的光形。在一實施例中,透光填充單元120的材質為聚合物,例如為聚甲基丙烯酸甲酯(polymethylmethacrylate)或其他適當的透光聚合物。此外,在本實施例中,緩衝層130的折射率需大於或等於透光基板110的折射率。在本實施例中,透光填充單元120的折射率落在1至1.8的範圍內,透光基板110的折射率落在1.5至2.0的範圍內,且緩衝層130的折射率落在1.5至3.5的範圍內。In this embodiment, the refractive index of the light-transmitting
在本實施例中,發光模組100更包括至少一量子點層140(在圖1A中是以多個量子點層140為例),配置於透光基板110的出光面114上,且與發光元件200對應配置。量子點層140可以將發光元件200所發出的光222的波長轉換成不同的波長。當發光模組100為顯示面板時,量子點層140可以有多種(例如為三種)不同的量子點材料層,而每一發光元件200可視為一子畫素,且多種不同的量子點材料層將子畫素的光222轉換成不同波長(即不同顏色)的光。然而,當發光模組100為一照明模組時,量子點層140可以只有一種量子點材料層,且量子點層140也可以連續分布於出光面114上,以將發光元件200所發出的光222轉換為某一種顏色的光。在本實施例中,量子點層140的折射率是落在1.2至1.8的範圍內。In this embodiment, the light-emitting
圖3A至圖3F為圖1A的發光模組在其透光填充單元的背對發光元件的表面的曲率半徑分別為1000微米、100微米、70微米、60微米、50微米及40微米時的光強度相對於視角的分布圖。請參照圖1A及圖3A至圖3F,在圖3A至圖3F中,0度是指圖1A的正上方,180度是指圖1A的正下方,半徑方向是光強度,第一型半導體層210的上表面與下表面的面積比為0.77,緩衝層130的折射率為3.5,透光填充單元120的材質為聚甲基丙烯酸甲酯,透光基板110的折射率為1.5,而量子點層140的折射率為1.5。由圖3A至圖3F可知,當表面122的曲率半徑越大時,輸出能量越均勻,而若將表面122的曲率半徑稍微降低,可發現出光能量分布會往中間(即圖1A的正下方)稍微集中。此外,圖3A至圖3F的發光模組100的光效率皆為0.646,由此可見本實施例的發光模組100在調整光形時較不會犧牲光效率。3A to 3F show the light of the light-emitting module of FIG. 1A when the curvature radius of the surface of the light-transmitting filling unit facing away from the light-emitting element is 1000 microns, 100 microns, 70 microns, 60 microns, 50 microns and 40 microns respectively. A plot of intensity versus viewing angle. Please refer to Figure 1A and Figure 3A to Figure 3F. In Figure 3A to Figure 3F, 0 degrees means directly above Figure 1A, 180 degrees means directly below Figure 1A, the radius direction is the light intensity, the first type semiconductor layer The area ratio of the upper surface to the lower surface of 210 is 0.77, the refractive index of the
圖4A至圖4B為圖1A的發光模組分別在兩種不同的參數下的光強度相對於視角的分布圖。請參照圖4A至圖4B,在圖4A至圖4B中,0度是指圖1A的正上方,180度是指圖1A的正下方,半徑方向是光強度,第一型半導體層210的上表面與下表面的面積比為0.77,緩衝層130的折射率為3.5,圖4A與圖4B的透光填充單元120的材質為聚甲基丙烯酸甲酯,表面122的曲率半徑為1000微米,圖4A的透光基板110的折射率為1.0,圖4B的透光基板110的折射率為1.5,而圖4A與圖4B的量子點層140的折射率為1.5。此外,圖4A的發光模組100的光效率為0.517,圖4B的發光模組100的光效率為0.646。當透光基板110的折射率較低時,出光能量分布具有高的集中度,其光形接近準直光形,這樣的光形有利於光222從發光元件200離開,而進入量子點層140,進而提升光效率。針對不同的量子點層140材料,由於量子點層140的折射率的不同,透光填充單元120的表面122的形狀、透光填充單元120的折射率及透光基板110的折射率也可以有所不同。4A to 4B are distribution diagrams of light intensity versus viewing angle under two different parameters of the light-emitting module in FIG. 1A . Please refer to FIGS. 4A to 4B . In FIGS. 4A to 4B , 0 degrees refers to the direction directly above FIG. 1A , 180 degrees refers to the direction directly below FIG. 1A , the radius direction refers to the light intensity, and the upper surface of the first
圖5A至圖5D為圖1A的發光模組在緩衝層與透光填充單元於4種不同的折射率下的光強度相對於視角的分布圖。請參照圖5A至圖5D,在圖5A至圖5D中,0度是指圖1A的正上方,180度是指圖1A的正下方,半徑方向是光強度,圖5A的緩衝層130與透光填充單元120的折射率皆為1.5,圖5B的緩衝層130與透光填充單元120的折射率皆為2.0,圖5C的緩衝層130與透光填充單元120的折射率皆為2.5,且圖5D的緩衝層130與透光填充單元120的折射率皆為3.0,第一型半導體層210、表面122、透光基板110以及量子點層140的設計與圖4B實施例相同。圖5A的發光模組100的光效率為0.708,圖5B的發光模組100的光效率為0.786,圖5C的發光模組100的光效率為0.665,且圖5D的發光模組100的光效率為0.708。比較圖4A至圖4B與圖5A至圖5D可知,當緩衝層130與透光填充單元120的折射率相同時,光效率較高,且當兩者的折射率均為1.5時,輸出光形為均勻狀。5A to 5D are distribution diagrams of light intensity versus viewing angle in the buffer layer and light-transmitting filling unit of the light-emitting module of FIG. 1A under four different refractive indexes. Please refer to Figures 5A to 5D. In Figures 5A to 5D, 0 degrees refers to directly above Figure 1A, 180 degrees refers to directly below Figure 1A, the radius direction is the light intensity, the
圖6A為發光模組的對照組的光強度相對於視角的分布圖,而圖6B為圖1A的發光模組相對於視角的分布圖。圖6A的對照組的透光基板不具有圖1A的柱狀凹陷116,且對照組也無圖1A的透光填充單元120,也就是對照組是採用一個平坦的透光基板,而其餘膜層與參數皆與圖1A的發光模組100相同。在圖6A與圖6B的對照組與發光模組100中,0度是指圖1A的正上方,180度是指圖1A的正下方,半徑方向是光強度,第一型半導體層210的上表面與下表面的面積比為0.77,緩衝層130的折射率為3.5,透光填充單元120的材質為聚甲基丙烯酸甲酯,透光基板110的折射率為1.5,而量子點層140的折射率為1.5。比較圖6A與圖6B可知,採用柱狀凹陷116與透光填充單元120的確可以改善輸出光形。FIG. 6A is a distribution diagram of the light intensity of the control group of the light-emitting module with respect to the viewing angle, and FIG. 6B is a distribution diagram of the light-emitting module of FIG. 1A with respect to the viewing angle. The light-transmitting substrate of the control group in Figure 6A does not have the
綜上所述,在本發明的實施例的發光模組中,由於透光基板具有柱狀凹陷,且透光填充單元對應填充於柱狀凹陷中,因此發光模組的製程精度較容易控制,具有較高的良率。此外,在本發明的實施例的發光模組中,可以藉由調整透光基板、透光填充單元或其他光學膜層的折射率或材料,以及藉由調整透光填充單元的表面的曲率,來達到各種光形的調變。To sum up, in the light-emitting module according to the embodiment of the present invention, since the light-transmitting substrate has columnar depressions, and the light-transmitting filling units are correspondingly filled in the columnar depressions, the process accuracy of the light-emitting module is easier to control. Has a higher yield. In addition, in the light-emitting module according to the embodiment of the present invention, the refractive index or material of the light-transmitting substrate, the light-transmitting filling unit or other optical film layers can be adjusted, and by adjusting the curvature of the surface of the light-transmitting filling unit, To achieve the modulation of various light shapes.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。另外本發明的任一實施例或申請專利範圍不須達成本發明所揭露之全部目的或優點或特點。此外,摘要部分和標題僅是用來輔助專利文件搜尋之用,並非用來限制本發明之權利範圍。此外,本說明書或申請專利範圍中提及的“第一”、“第二”等用語僅用以命名元件(element)的名稱或區別不同實施例或範圍,而並非用來限制元件數量上的上限或下限。However, the above are only preferred embodiments of the present invention, and should not be used to limit the scope of the present invention. That is, any simple equivalent changes and modifications made in accordance with the patent scope of the present invention and the description of the invention, All are still within the scope of the patent of this invention. In addition, any embodiment or patentable scope of the present invention does not need to achieve all the purposes, advantages or features disclosed in the present invention. In addition, the abstract section and title are only used to assist in searching patent documents and are not intended to limit the scope of the invention. In addition, terms such as “first” and “second” mentioned in this specification or the scope of the patent application are only used to name elements or to distinguish different embodiments or scopes, and are not used to limit the number of elements. upper or lower limit.
100、100b:發光模組
110:透光基板
112:設置平面
114:出光面
116、116a:柱狀凹陷
120、120a:透光填充單元
122、122b:表面
124:頂面
130:緩衝層
140:量子點層
200:發光元件
210:第一型半導體層
220:發光層
222:光
230:第二型半導體層
240:透明導電層
250:第一電極
260:第二電極
270:絕緣層
280:反射層
A1:發光元件投影範圍
A2:透光單元投影範圍
C1、C2:幾何中心
D1、D2:外徑
H1:高度
100, 100b: Light emitting module
110: Translucent substrate
112:Set plane
114:
圖1A是本發明的一實施例的發光模組的局部剖面示意圖。
圖1B是圖1A的發光模組的上視示意圖。
圖1C是另一實施例的發光模組的上視示意圖。
圖2是本發明的又一實施例的發光模組的局部剖面示意圖。
圖3A至圖3F為圖1A的發光模組在其透光填充單元的背對發光元件的表面122的曲率半徑分別為1000微米、100微米、70微米、60微米、50微米及40微米時的光強度相對於視角的分布圖。
圖4A至圖4B為圖1A的發光模組分別在三種不同的參數下的光強度相對於視角的分布圖。
圖5A至圖5D為圖1A的發光模組在緩衝層與透光填充單元於4種不同的折射率下的光強度相對於視角的分布圖。
圖6A為發光模組的對照組的光強度相對於視角的分布圖。
圖6B為圖1A的發光模組相對於視角的分布圖。
1A is a partial cross-sectional schematic diagram of a light-emitting module according to an embodiment of the present invention.
Figure 1B is a schematic top view of the light emitting module of Figure 1A.
FIG. 1C is a schematic top view of a light-emitting module according to another embodiment.
Figure 2 is a partial cross-sectional schematic view of a light-emitting module according to another embodiment of the present invention.
3A to 3F show the light-emitting module of FIG. 1A when the curvature radius of the
100:發光模組 100:Light-emitting module
110:透光基板 110: Translucent substrate
112:設置平面 112:Set plane
114:出光面 114: Shiny surface
116:柱狀凹陷 116: Columnar depression
120:透光填充單元 120: Translucent filling unit
122:表面 122:Surface
124:頂面 124:Top surface
130:緩衝層 130:Buffer layer
140:量子點層 140:Quantum dot layer
200:發光元件 200:Light-emitting components
210:第一型半導體層 210: First type semiconductor layer
220:發光層 220: Luminous layer
222:光 222:Light
230:第二型半導體層 230: Second type semiconductor layer
240:透明導電層 240:Transparent conductive layer
250:第一電極 250: first electrode
260:第二電極 260: Second electrode
270:絕緣層 270:Insulation layer
280:反射層 280: Reflective layer
A1:發光元件投影範圍 A1: Projection range of light-emitting elements
A2:透光單元投影範圍 A2: Projection range of light-transmitting unit
C1、C2:幾何中心 C1, C2: geometric center
D1、D2:外徑 D1, D2: outer diameter
H1:高度 H1: height
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| TW201929257A (en) * | 2017-12-15 | 2019-07-16 | 友達光電股份有限公司 | Sensing device |
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|---|---|---|---|---|
| TW201909379A (en) * | 2017-06-12 | 2019-03-01 | 美商優尼卡塔股份有限公司 | Assembling discrete components in parallel on the substrate |
| TW201929257A (en) * | 2017-12-15 | 2019-07-16 | 友達光電股份有限公司 | Sensing device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202347843A (en) | 2023-12-01 |
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