TWI811829B - Semiconductor component, plasma processing apparatus and method for forming composite coating - Google Patents

Abstract

A semiconductor component, a plasma processing device and a method for forming a composite coating, wherein the semiconductor component includes: a component body; a composite coating located on the surface of the component body, including an overlapping and stacked first corrosion-resistant layer coating and a second corrosion-resistant coating, the grain size of the first corrosion-resistant coating is larger than the grain size of the second corrosion-resistant coating, and the second corrosion-resistant coating is used to inhibit the first corrosion-resistant coating. Grain growth size of corroded coatings. The outermost layer of the composite coating and the part in contact with the component body are both first corrosion-resistant coatings. The semiconductor component can resist plasma corrosion and can also reduce particle pollution.

Description

Semiconductor components, plasma processing apparatus and method of forming composite coating

The present invention relates to the field of semiconductors, and in particular, to a semiconductor component, a plasma processing device, and a method for forming a composite coating on the surface of the component body.

In the manufacturing process of semiconductor components, plasma etching is a key process for processing wafers into designed patterns.

In a typical plasma etching process, process gases (such as CF ₄ , O _{2 ,} etc.) form plasma under radio frequency (Radio Frequency, RF) excitation. These plasmas undergo physical bombardment and chemical reactions with the wafer surface after passing through the electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, thereby etching the wafer with a specific structure.

However, during the plasma etching process, physical bombardment and chemical reactions will also act on all semiconductor components in contact with the plasma inside the etching chamber, causing corrosion. Therefore, there is an urgent need in the industry to prepare the surface of the component body. An excellent corrosion-resistant coating that resists plasma corrosion and reduces particle contamination issues.

The technical problem solved by the present invention is to provide a semiconductor component, a plasma processing device, and a composite coating formed on the surface of the component body to improve the plasma corrosion resistance and reduce particle pollution problems.

In order to solve the above technical problems, the present invention provides a semiconductor component, including: a component body; and a composite coating located on the surface of the component body, including alternately arranged first corrosion-resistant coatings and second corrosion-resistant coatings. layer, grain size of the first corrosion-resistant coating The grain size of the second corrosion-resistant coating is larger than that of the second corrosion-resistant coating. The outermost layer of the composite coating and the part in contact with the component body are both the first corrosion-resistant coating. The second corrosion-resistant coating is used to inhibit the third corrosion-resistant coating. A grain growth size of a corrosion-resistant coating.

Preferably, the materials of the first corrosion-resistant coating and the second corrosion-resistant coating are the same or different.

Preferably, the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline composite compounds formed by rare earth elements, oxygen and fluorine. The crystalline composite compounds formed by rare earth elements, oxygen and fluorine include: YOF, Y ₅ O ₄ F ₇ ,Y ₆ O ₅ F ₈ ,Y ₇ O ₆ F ₉ ,Y ₁₇ O ₁₄ F ₂₃ ,LaOF,CeOF,CeO ₆ F ₂ ,PrOF,NdOF,SmOF,EuOF,Eu ₃ O ₂ F ₅ ,Eu ₅ O ₄ F ₇ ,GdOF,Gd ₅ O ₄ F ₇ ,TbOF,DyOF,HoOF,ErOF,Er ₃ O ₂ F ₅ ,Er ₅ O ₄ F ₇ ,TmOF,YbOF,Yb ₅ O ₄ F ₇ , At least one of Yb6O ₅ F ₈ , LuOF, Lu ₃ O ₂ F ₅ , Lu ₅ O ₄ F ₇ or Lu ₇ O ₆ F ₉ .

Preferably, the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline composite compounds formed by rare earth elements and aluminum oxide, and the crystalline composite compounds formed by rare earth elements and aluminum oxide include: Y ₄ Al ₂ O ₉ ,YAlO ₃ ,Y ₃ Al ₅ O ₁₂ ,LaAlO ₃ ,CeAlO ₃ ,Ce ₆ AlO ₃ ,Pr ₄ Al ₂ O ₉ ,PrAlO ₃ ,PrAl ₁₁ O ₁₈ ,Nd ₄ Al ₂ O ₉ ,NdAlO ₃ ,NdAl ₁₁ O ₁₈ ,Sm ₄ Al ₂ O ₉ ,SmAlO ₃ ,Eu ₄ Al ₂ O ₉ ,EuAlO ₃ ,Eu ₃ Al ₅ O ₁₂ ,Gd ₄ Al ₂ O ₉ ,GdAlO ₃ ,Gd ₃ Al ₅ O ₁₂ ,Tb ₄ Al ₂ O ₉ ,TbAlO ₃ ,Tb _{3 Al 5} O ₁₂ ,Dy ₄ Al 2 O 9 ,DyAlO ₃ , _{Dy 3} Al ₅ O ₁₂ ,Ho ₄ Al ₂ O ₉ ,HoAlO ₃ ,Ho ₃ Al ₅ O ₁₂ ,Er ₄ Al ₂ O ₉ ,ErAlO ₃ ,Er _{3 Al 5} O ₁₂ ,Tm ₄ Al 2 O ₉ ,TmAlO ₃ ,Tm ₃ Al ₅ O ₁₂ ,Yb ₄ Al ₂ O ₉ ,Yb ₆ Al ₁₀ O ₂₄ ,Lu ₄ Al ₂ At least one of O ₉ , LuAlO ₃ or Lu ₃ Al ₅ O ₁₂ .

Preferably, the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline composite compounds formed by rare earth elements and silicon oxide, and the crystalline composite compounds formed by rare earth elements and silicon oxide include: Y ₂ SiO ₅ , Y ₂ Si ₂ O ₇ ,La ₂ SiO ₅ ,La ₂ Si ₂ O ₇ ,Ce ₂ SiO ₅ ,Pr ₂ SiO ₅ ,Pr ₂ Si ₂ O ₇ ,Nd ₂ SiO ₅ ,Nd ₄ Si ₃ O ₁₂ ,Nd ₂ Si ₂ O ₇ ,Sm ₂ SiO ₅ ,Sm _{4 Si 3} O ₁₂ ,Sm ₂ Si 2 O ₇ ,Eu ₂ SiO ₅ ,EuSiO ₃ ,Eu ₂ Si ₂ O ₇ ,Gd ₂ SiO ₅ ,Gd ₄ Si ₃ O ₁₂ ,Gd ₂ Si ₂ O ₇ ,Tb ₂ SiO ₅ ,Tb ₂ Si ₂ O ₇ ,Dy ₂ SiO ₅ ,Dy ₄ Si ₃ O ₁₂ ,Dy ₂ Si ₂ O ₇ ,Ho ₂ SiO ₅ ,Er ₂ Si ₂ O ₇ ,Er ₂ SiO ₅ ,Er ₄ Si ₃ O ₁₂ ,Er ₂ Si ₂ O ₇ ,Tm ₂ SiO ₅ ,Tm ₂ Si ₂ O ₇ ,Yb ₂ SiO ₅ ,Yb ₄ Si ₃ O ₁₂ ,Yb ₂ Si ₂ O ₇ , at least one of Lu ₂ SiO ₅ , Lu ₄ Si ₃ O ₁₂ or Lu ₂ Si ₂ O ₇ .

Preferably, the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline oxides of rare earth metals, and the crystalline oxides of rare earth metals include LaO, La ₂ O ₃ , CeO, Ce ₂ O ₃ , CeO ₂ ,PrO,Pr ₂ O ₃ ,Pr ₆ O ₁₁ ,PrO ₂ ,NdO _, Nd ₂ O ₃ ,SmO,Sm ₂ O ₃ ,EuO,Eu ₂ O 3 ,Gd ₂ O ₃ ,Tb ₂ O ₃ ,Tb At least one of ₄ O ₇ , TbO ₂ , Dy ₂ O ₃ , Ho ₂ O ₃ , Er ₂ O ₃ , Tm ₂ O ₃ , YbO, Yb ₂ O ₃ or Lu ₂ O ₃ .

Preferably, the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline fluorides of rare earth metals, and the crystalline fluorides of rare earth metals include YF ₃ , LaF ₃ , CeF ₃ , CeF ₄ , PrCl ₃ ,PrCl ₄ ,NdF ₃ ,SmF ₂ ,SmF ₃ ,EuF ₂ ,EuF ₃ ,GdF ₃ ,TbF ₃ ,TbF ₄ ,DyF ₃ ,HoF ₃ ,ErF ₃ ,TmF ₂ ,TmF ₃ ,YbF ₃ or LuF ₃ At least one.

Preferably, the crystal grains of the first corrosion-resistant coating are columnar crystal grains; the crystal grains of the second corrosion-resistant coating are finely divided crystal grains.

Preferably, the grain width direction size of the first corrosion-resistant coating is greater than 100 nanometers; the grain width direction size of the second corrosion-resistant coating is less than 100 nanometers.

Preferably, the thickness of the first corrosion-resistant coating is 10 nanometers to 5000 nanometers; the thickness of the second corrosion-resistant coating is 1 nanometers to 100 nanometers.

Preferably, the first corrosion-resistant coating and the second corrosion-resistant coating have a crystalline structure or an amorphous structure.

Correspondingly, the present invention also provides a plasma processing device, including: a reaction chamber, in which is a plasma environment; the above-mentioned semiconductor components are located in the reaction chamber and exposed to the plasma environment.

Preferably, the plasma environment contains at least one of fluorine, chlorine, oxygen or hydrogen plasma.

Preferably, the plasma processing device is a plasma etching device or a plasma cleaning device.

Preferably, when the plasma processing device is an inductively coupled plasma processing device, the semiconductor components include: a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas At least one of a tube flange, an electrostatic chuck element, a covering ring, a focusing ring, an insulating ring, or a plasma confinement device.

Preferably, when the plasma processing device is a capacitively coupled plasma processing device, the semiconductor components include: a shower head, an upper ground ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck element, and a lower ground ring. At least one of a ring, a covering ring, a focusing ring, an insulating ring or a plasma confinement device.

Correspondingly, the present invention also provides a method for forming a composite coating on the surface of a component body, which includes the following steps: providing a component body; and forming the above composite coating on the surface of the component body.

Preferably, the formation process of the first corrosion-resistant coating and the second corrosion-resistant coating includes at least one of a physical vapor deposition process, a chemical vapor deposition process or an atomic layer deposition process.

Preferably, the melting point of the composite coating is _Tm ; when the formation process of the first corrosion-resistant coating and the second corrosion-resistant coating is a physical vapor deposition process, the first corrosion-resistant coating is formed. The temperature range is: 1/3T _m ~1/2T _m , and the temperature range for forming the second corrosion-resistant coating is less than 1/3T _m .

Preferably, when the material of the composite coating is yttrium oxide, the temperature range for forming the first corrosion-resistant coating is: 800 degrees Celsius to 1200 degrees Celsius, and the temperature range for forming the second corrosion-resistant coating is less than 800 degrees Celsius.

Preferably, the rate at which the first corrosion-resistant coating is formed is a first rate, the rate at which the second corrosion-resistant coating is formed is a second rate, and the second rate is less than 1/2 of the first rate.

Preferably, when the composite coating is yttrium oxide, the first rate range is: 0.5 nm/s ~ 5 nm/s, and the second rate range is 0.01 nm/s ~ 0.3nm/sec.

Preferably, the process of forming the composite coating also includes: processing using an auxiliary enhancement source; the auxiliary enhancement source also includes: at least one of a plasma source, an ion beam source, a microwave source or a radio frequency source. .

Preferably, under the action of the auxiliary enhancement source, the power used to form the first corrosion-resistant coating is the first power, and the power used to form the second corrosion-resistant coating is the second power, and the second power is smaller than the first power. 1/2.

Compared with the conventional technology, the technical solution of the embodiment of the present invention has the following beneficial effects: in the semiconductor component provided by the technical solution of the present invention, the surface of the component body has a composite coating, and the composite coating includes a first A corrosion-resistant coating and a second corrosion-resistant coating. The grain size of the first corrosion-resistant coating is larger than the grain size of the second corrosion-resistant coating. The second corrosion-resistant coating is used to inhibit the first corrosion-resistant coating. The grain growth of the corrosion coating prevents the generation of large grains in the first corrosion-resistant coating. In this way, the semiconductor components are exposed to the plasma environment and are not easy to diffuse along the edges of the large grains to cause the large grains to fall off. Therefore, It is beneficial to reduce particle pollution to better meet process requirements. In addition, the composite coating in contact with the component body is a first corrosion-resistant coating. The first corrosion-resistant coating has a strong binding force with the component body, and the outermost layer of the composite coating is the first corrosion-resistant coating. Corrosion coating, the grain size of the first corrosion-resistant coating is larger than the grain size of the second corrosion-resistant coating, has strong corrosion resistance, and can improve the protection of the component body from plasma corrosion.

100:Reaction chamber

101:Pedestal

102:Sprinkler head

103:Electrostatic chuck

104: Upper grounding ring

105:Gas distribution plate

106: Lower ground ring

107,203: Covering ring

108,204: Focus ring

109,205:Plasma Confinement Device

200:Inner bushing

201:Gas nozzle

300: Part body

301: Composite coating

301a: The first corrosion-resistant coating

301b: Second corrosion-resistant coating

400: Vacuum chamber

401:Target

402: Excitation device

W: substrate

S1~S2: steps

Fig. 1 is a schematic structural diagram of a plasma processing device of the present invention; Fig. 2 is a schematic structural diagram of another plasma processing device of the present invention; Fig. 3 is a schematic structural diagram of a semiconductor component of the present invention; Fig. 4 is a schematic structural diagram of a semiconductor component of the present invention. The process flow chart of forming a composite coating on the surface of the body; and FIG. 5 is a schematic diagram of the device used in the physical vapor deposition process of the present invention.

As mentioned in the prior art, there is an urgent need to prepare a corrosion-resistant coating with excellent performance on the surface of the component body to resist plasma corrosion and reduce particle pollution problems. To this end, the present invention is dedicated to providing a semiconductor component, plasma A processing device and a method for forming a composite coating on the surface of a component body. The semiconductor component has strong corrosion resistance in a plasma environment and can reduce particle contamination problems. The following is a detailed description:

Figure 1 is a schematic structural diagram of a plasma processing device according to the present invention.

Please refer to Figure 1. The plasma reaction device includes: a reaction chamber 100. The inside of the reaction chamber 100 is a plasma environment. The semiconductor components and the internal cavity wall of the reaction chamber 100 are exposed to the plasma environment. The plasma includes F-containing plasma. , at least one of Cl-containing plasma, H-containing plasma or O-containing plasma.

The plasma reaction device also includes: a base 101. An electrostatic chuck 103 is provided above the base 101. An electrode (not shown in the figure) is provided in the electrostatic chuck 103. The electrode is connected to a DC power supply. It is used to generate electrostatic adsorption to fix the substrate W to be processed, and the plasma is used to process the substrate W to be processed. Since plasma is highly corrosive, in order to prevent the surface of semiconductor components exposed to the plasma environment from being corroded by plasma, it is necessary to apply a composite coating on the surface of the component body.

In this embodiment, the plasma reaction device is a capacitively coupled plasma reaction device. Accordingly, the semiconductor components exposed to the plasma environment include: shower head 102, upper ground ring 104, moving ring, and gas distribution plate 105 , at least one of a gas buffer plate, an electrostatic chuck 103, a lower ground ring 106, a covering ring 107, a focusing ring 108, an insulating ring, and a plasma confinement device 109.

Figure 2 is a schematic structural diagram of another plasma processing device of the present invention.

In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device. Accordingly, the semiconductor components exposed to the plasma environment include: ceramic plate, inner liner 200, gas nozzle 201, gas distribution plate, and gas pipe. At least one of a flange, an electrostatic chuck 202 , a cover ring 203 , a focusing ring 204 , an insulating ring and a plasma confinement device 205 .

During the plasma etching process, physical bombardment and chemical reactions will also act on all semiconductor components in contact with the plasma inside the reaction chamber 100, causing corrosion to the semiconductor components and being exposed to the plasma corrosion environment for a long time. , the surface structure of semiconductor components will be damaged, causing the precipitation of bulk components. The bulk components will break away from the surface to form tiny particles, contaminating the wafer. Advanced semiconductor manufacturing has strict requirements on tiny particle pollution. For example, the number of particles larger than 45nm is 0. Therefore, it is necessary to apply a composite coating on the surface of the component body in the plasma reaction device to resist plasma corrosion.

The following is a detailed description of semiconductor components:

Figure 3 is a schematic structural diagram of a semiconductor component of the present invention.

Please refer to Figure 3. Semiconductor components include: component body 300; composite coating 301, located on the surface of the component body 300, including alternately arranged first corrosion-resistant coatings 301a and second corrosion-resistant coatings 301b. The grain size of the first corrosion-resistant coating 301a is larger than the grain size of the second corrosion-resistant coating 301b. The outermost layer of the composite coating 301 and the parts in contact with the component body 300 are both the first corrosion-resistant coating. Layer 301a, the second corrosion-resistant coating 301b is used to inhibit the grain growth size of the first corrosion-resistant coating 301a.

The material of the component body 300 includes: at least one of aluminum alloy, silicon carbide, silicon, quartz or ceramics.

The surface of the component body 300 has a composite coating 301. When the semiconductor component is exposed to a plasma environment, since the composite coating 301 has strong corrosion resistance, the composite coating 301 can protect the component body 300 and prevent the component body 300 from being corroded by plasma, which is beneficial to improving the service life of semiconductor components.

The composite coating 301 includes a first corrosion-resistant coating 301a and a second corrosion-resistant coating 301b. The first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b are made of the same or different materials. When the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b are made of different materials, after forming the first corrosion-resistant coating 301a, the materials need to be replaced to form a second corrosion-resistant coating 301a with a material different from that of the first corrosion-resistant coating 301a. 2. Corrosion-resistant coating 301b.

The first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b have a crystalline structure or an amorphous structure.

In one embodiment, the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b are crystalline composite compounds formed by rare earth elements, oxygen and fluorine. The crystalline composite compounds formed by rare earth elements, oxygen and fluorine include: : YOF, Y ₅ O ₄ F ₇ , Y ₆ O ₅ F ₈ , Y ₇ O ₆ F ₉ , Y ₁₇ O ₁₄ F ₂₃ , LaOF (lanthanum oxyfluoride), CeOF, CeO ₆ F ₂ , PrOF (lanthanum oxyfluoride) ), NdOF (neodymium oxyfluoride), SmOF (samarium oxyfluoride), EuOF (europium oxyfluoride), Eu ₃ O ₂ F ₅ , Eu ₅ O ₄ F ₇ , GdOF (gium oxyfluoride), Gd ₅ O ₄ F ₇ ,TbOF (dyronium oxyfluoride), DyOF (dyprosium oxyfluoride), HoOF (dyronium oxyfluoride), ErOF (erbium oxyfluoride), Er ₃ O ₂ F ₅ ,Er ₅ O ₄ F ₇ ,TmOF (dyronium oxyfluoride), At least one of YbOF (ytterbium oxyfluoride), Yb ₅ O ₄ F ₇ , Yb6O ₅ F ₈ , LuOF (ytterbium oxyfluoride), Lu ₃ O ₂ F ₅ , Lu ₅ O ₄ F ₇ or Lu ₇ O ₆ F ₉ .

In another embodiment, the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b are crystalline composite compounds formed by rare earth elements and aluminum oxide. The crystalline composite compound formed by rare earth elements and aluminum oxide includes: Y ₄ Al ₂ O ₉ , YAlO ₃ , Y ₃ Al ₅ O ₁₂ , LaAlO ₃ , CeAlO ₃ (cerium aluminum oxide), Ce ₆ AlO ₃ , Pr ₄ Al ₂ O ₉ (cerium aluminum oxide), PrAlO ₃ , PrAl ₁₁ O ₁₈ ,Nd ₄ Al ₂ O ₉ ,NdAlO ₃ (neodymium aluminum oxide), NdAl ₁₁ O ₁₈ ,Sm ₄ Al ₂ O ₉ (samarium aluminum oxide), SmAlO ₃ ,Eu ₄ Al ₂ O ₉ (europium aluminum oxide), EuAlO ₃ , Eu ₃ Al ₅ O ₁₂ , Gd ₄ Al ₂ O ₉ (tium aluminum oxide), GdAlO ₃ , Gd ₃ Al ₅ O ₁₂ , Tb ₄ Al ₂ O ₉ (tium aluminum oxide), TbAlO ₃ , Tb ₃ Al ₅ O ₁₂ ,Dy ₄ Al ₂ O ₉ (dysprosium aluminum oxide), DyAlO ₃ , Dy ₃ Al ₅ O ₁₂ ,Ho ₄ Al ₂ O ₉ (dysprosium aluminum oxide), HoAlO ₃ , Ho ₃ Al ₅ O ₁₂ ,Er ₄ Al ₂ O ₉ (erbium aluminum oxide), ErAlO ₃ , Er ₃ Al ₅ O ₁₂ , Tm ₄ Al ₂ O ₉ (erbium aluminum oxide), TmAlO ₃ , Tm ₃ Al ₅ O ₁₂ , Yb ₄ Al ₂ O ₉ (ytterbium _At least _{one of LuAlO 3 or Lu 3} Al _{5 O 12 .}

In yet another embodiment, the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b are crystalline composite compounds formed by rare earth elements and silicon oxide. The crystalline composite compounds formed by rare earth elements and silicon oxide include: Y ₂ SiO ₅ ,Y ₂ Si ₂ O ₇ ,La ₂ SiO ₅ (lanthanum silica), La ₂ Si ₂ O ₇ ,Ce ₂ SiO ₅ (cerium silica), Pr ₂ SiO ₅ (lanthanum silica), Pr ₂ Si ₂ O ₇ ,Nd ₂ SiO ₅ (neodymium silicon oxide), Nd ₄ Si ₃ O ₁₂ ,Nd ₂ Si ₂ O ₇ ,Sm ₂ SiO ₅ (samarium silicon oxide), Sm ₄ Si ₃ O ₁₂ ,Sm ₂ Si ₂ O ₇ ,Eu ₂ SiO ₅ (Europium silica), EuSiO ₃ ,Eu ₂ Si ₂ O ₇ ,Gd ₂ SiO ₅ (Europium silica), Gd ₄ Si ₃ O ₁₂ ,Gd ₂ Si ₂ O ₇ ,Tb ₂ SiO ₅ (dysprosium silicon oxide), Tb ₂ Si ₂ O ₇ ,Dy ₂ SiO ₅ (dysprosium silicon oxide), Dy ₄ Si ₃ O ₁₂ ,Dy ₂ Si ₂ O ₇ ,Ho ₂ SiO ₅ (dysprosium silicon oxide), Er ₂ Si ₂ O ₇ (erbium silicon oxide), Er ₂ SiO ₅ ,Er ₄ Si ₃ O ₁₂ ,Er ₂ Si ₂ O ₇ ,Tm ₂ SiO ₅ (erbium silicon oxide), Tm ₂ Si ₂ O ₇ ,Yb ₂ SiO ₅ , at least one of Yb ₄ Si ₃ O ₁₂ , Yb ₂ Si ₂ O ₇ , Lu ₂ SiO ₅ , Lu ₄ Si ₃ O ₁₂ or Lu ₂ Si ₂ O ₇ .

In yet another embodiment, the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b are crystalline oxides of rare earth metals, and the crystalline oxides of rare earth metals include LaO, La ₂ O ₃ , CeO, Ce ₂ O ₃ ,CeO ₂ ,PrO,Pr ₂ O ₃ ,Pr ₆ O ₁₁ ,PrO ₂ ,NdO,Nd ₂ O ₃ ,SmO,Sm ₂ O ₃ ,EuO,Eu ₂ O ₃ ,Gd ₂ O ₃ ,Tb At least one of ₂ O ₃ , Tb ₄ O ₇ , TbO ₂ , Dy ₂ O ₃ , Ho ₂ O ₃ , Er ₂ O ₃ , Tm ₂ O ₃ , YbO, Yb ₂ O ₃ or Lu ₂ O ₃ .

In other embodiments, the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline fluorides of rare earth metals, and the crystalline fluorides of rare earth metals include YF ₃ , LaF ₃ , CeF ₃ , CeF ₄ , PrCl ₃ ,PrCl ₄ ,NdF ₃ ,SmF ₂ ,SmF ₃ ,EuF ₂ ,EuF ₃ ,GdF ₃ ,TbF 3 ,TbF ₄ ,DyF ₃ ,HoF ₃ ,ErF ₃ ,TmF ₂ ,TmF _{3 ,} YbF ₃ or LuF ₃ at least one of them.

During the formation of the first corrosion-resistant coating 301a, due to the cumulative effect of thermal effects, when the first corrosion-resistant coating 301a is deposited to a certain thickness, the molecular flow breaks through the nucleation energy barrier and nucleates in large quantities, and rapidly agglomerates and grows. , abnormally large grains will be generated randomly. In order to prevent the generation of abnormally large grains, in this implementation, the thickness of the first corrosion-resistant coating 301a ranges from 10 nanometers to 5000 nanometers. Within the thickness range of the first corrosion-resistant coating 301a, the first corrosion-resistant coating 301a is less likely to produce large grains, and the grains of the first corrosion-resistant coating 301a are columnar grains. The grain size of the first corrosion-resistant coating 301a is larger than the grain size of the second corrosion-resistant coating 301b. Therefore, the second corrosion-resistant coating 301b can be used to inhibit the first corrosion-resistant coating 301a. Produce large grains. Specifically, the crystal grains of the second corrosion-resistant coating 301b are fine grains, and the thickness of the second corrosion-resistant coating 301b is 1 nanometer to 100 nanometers.

The significance of selecting the thickness of the second corrosion-resistant coating 301b is that if the thickness of the second corrosion-resistant coating 301b is less than 1 nanometer, it will be difficult for the second corrosion-resistant coating 301b to inhibit the first corrosion-resistant coating. Large crystal grains are generated in the layer 301a. If large crystal grains are generated in the first corrosion-resistant coating 301a, the large crystal grains will be corroded preferentially, and the plasma will interact with the surrounding crystals along the large crystal grains. Penetrating corrosion occurs at the grain boundaries between grains, destroying the bond between large grains and surrounding grains. When the critical bonding strength is exceeded, large grains will fall off, forming tiny particle pollutants that are scattered in the etching cavity and cannot be better satisfied. Process requirements; if the thickness of the second corrosion-resistant coating 301b is greater than 100 nanometers, it will cause a sudden change in the corrosion resistance of the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b, resulting in unstable performance. .

In this embodiment, the grain size of the first corrosion-resistant coating 301a is larger than the grain size of the second corrosion-resistant coating 301b. Specifically, the grain width direction size of the first corrosion-resistant coating 301a greater than 100 nanometers; the grain width direction size of the second corrosion-resistant coating 301b is less than 100 nanometers. The significance of this setting is to allow the second corrosion-resistant coating 301b to not only limit the abnormal growth of large particles in the first corrosion-resistant coating 301a, but also maintain the stability of the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b. Smooth transition of corrosion resistance effect, maintaining the stability of the environment in the reaction chamber.

In this embodiment, the first corrosion-resistant coating 301a is distributed on the surface of the component body 300 and the surface of the composite coating 301. The significance of this arrangement is that the crystal grains of the first corrosion-resistant coating 301a are Columnar crystals, with larger grains, have a higher bonding strength with the component body 300 than finely divided grains. Therefore, as the first layer combined with the component body 300, the composite coating 301 is fully integrated with the component body. 300 has a strong bonding strength; at the same time, the first corrosion-resistant coating 301a has columnar grains, larger grains, fewer grain boundaries than finely divided grains, and better corrosion resistance, so as Composite coating 301 is the outermost coating, giving full play to the corrosion resistance effect.

Figure 4 is a process flow chart for forming a composite coating on the surface of the component body according to the present invention.

Please refer to Figure 4. Step S1: Provide a component body; Step S2: Form the above-mentioned composite coating on the surface of the component body. The composite coating includes alternately arranged first corrosion-resistant coatings and second corrosion-resistant coatings. Corrosion coating, the grain size of the first corrosion-resistant coating is larger than the grain size of the second corrosion-resistant coating, the outermost layer of the composite coating and the part in contact with the component body Both are first corrosion-resistant coatings, and the second corrosion-resistant coating is used to inhibit grain growth of the first corrosion-resistant coating.

The following is a detailed description combined with the schematic diagram of the device used in the physical vapor deposition process:

FIG. 5 is a schematic diagram of the device used in the physical vapor deposition process of the present invention.

Please refer to Figure 5. The device used for the physical vapor deposition process includes: a vacuum chamber 400; a target 401 located at the bottom of the vacuum chamber 400; a component body 300 located within the vacuum chamber 400 and connected to the target 401 Arranged oppositely; the excitation device 402 is used to excite the atoms in the target material 401 to form a composite coating 301 on the surface of the component body 300.

In one embodiment, the method of forming the composite coating 301 on the surface of the component body 300 includes: the melting point of the composite coating 301 is T _m , and the temperature range T1 of the component body 300 is 1/3T _m ~1/2T _m , the first corrosion-resistant coating 301a is formed on the surface of the component body 300; after the first corrosion-resistant coating 301a is formed, the temperature range T2 of the component body 300 is made to be less than 1/3T _m . A second corrosion-resistant coating 301b is formed on the surface of the first corrosion-resistant coating 301a, and the composite coating 301 is formed after multiple cycles. The composite coating 301 includes a plurality of alternately arranged first corrosion-resistant coatings. 301a and the second corrosion-resistant coating 301b.

The principle of forming the composite coating 301 by changing the temperature of the component body 300 includes: when the heating temperature of the component body 300 is lower than 1/3 of the melting point _Tm of the composite coating 301, the composite coating The growth of 301 is limited by the diffusion of molecular flow on the surface of the component body 300, showing a fine grain growth mode; when the temperature of the component body 300 is higher than 1/3 of the melting point _Tm of the composite coating 301, due to The diffusion of molecular flow on the precipitation surface will show the growth pattern of columnar grains.

The device used for the physical vapor deposition process also includes: an auxiliary enhancement source (not shown in the figure), which is used to increase the diffusion of molecular flow on the surface of the component body, while reducing the temperature of the component body 300. It plays a role in improving the deposition morphology characteristics of the composite coating 301. Wherein, the auxiliary enhancement source includes: at least one of a plasma source, an ion beam source, a microwave source or a radio frequency source.

Taking Y ₂ O ₃ as an example, without the auxiliary enhancement source, 800 degrees Celsius < T ₁ < 1200 degrees Celsius, T ₂ < 800 degrees Celsius; with the auxiliary enhancement source, the heating temperature of the component body can be greatly reduced. T ₁ <300 degrees Celsius, T ₂ <200 degrees Celsius.

In another embodiment, the method of forming the composite coating 301 on the surface of the component body 300 includes: using the auxiliary enhancement source, when the power of the auxiliary enhancement source is the first power P ₁ , when the component body A first corrosion-resistant coating 301a is formed on the surface of 300; after forming the first corrosion-resistant coating 301a, the auxiliary enhancement source is used to set the power of the auxiliary enhancement source to the second power P ₂ , and the second power P ₂ When the first power P ₁ is less than 1/2, a second corrosion-resistant coating 301b is formed on the surface of the first corrosion-resistant coating 301a. After multiple cycles, the auxiliary enhancement source is made to operate under the first power P ₁ and the second corrosion-resistant coating 301a. Switching between the two powers _P2 forms the composite coating 301, which includes a first corrosion-resistant coating 301a and a second corrosion-resistant coating 301b that are alternately stacked in multiple layers. Taking Y ₂ O ₃ as an example, under the condition of plasma-assisted enhancement source, when the first power P ₁ is 6kw, the second power P ₂ can be 1kw or lower.

In yet another embodiment, the method of forming the composite coating 301 on the surface of the component body 300 includes: adjusting the excitation energy of the target 401 so that the deposition rate is the first rate V ₁ A first corrosion-resistant coating 301a is formed on the surface of 300; after forming the first corrosion-resistant coating 301a, the deposition rate is adjusted to the second rate V ₂ by adjusting the excitation energy of the target 401. After the first corrosion-resistant coating 301a is formed, The second corrosion-resistant coating 301b is formed on the surface of the coating 301a. After multiple cycles, the deposition rate is switched between the first rate V ₁ and the second rate V ₂ to form the composite coating 301. The composite coating 301 includes multiple layers of alternately stacked first corrosion-resistant coating 301a and second corrosion-resistant coating 301b.

The principle of forming the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b by adjusting the excitation energy of the target and adjusting the deposition rate includes: when the molecular flow excited by the target 401 is in a supersaturated deposition environment, the crystal grains During the growth process, sufficient molecules are nucleated and grown, therefore, the first corrosion-resistant coating 301a of columnar crystal form is formed; when the molecular flow excited by the target 401 is in an undersaturated deposition environment, the crystal grains The growth process is affected by the molecular nucleation number Due to the limitation of the amount, it can only be carried out in the form of fine grain growth, that is, forming the second corrosion-resistant coating 301b of fine grains.

Taking Y ₂ O ₃ as an example, when the first rate V ₁ of forming the first corrosion-resistant coating 301a is between 0.5 nanometer/second and 5 nanometer/second, the second corrosion-resistant coating 301b is formed. The second rate _V2 is between 0.01 nm/s and 0.3 nm/s.

The principle that the second corrosion-resistant coating 301b can limit the grain growth of the first corrosion-resistant coating 301a includes: during the physical vapor deposition process, the excited molecular flow is transported to the component body 300. The surface is nucleated and grown to form a first corrosion-resistant coating 301a. During these processes, the molecular flow of the first corrosion-resistant coating 301a grows on the component body 300 in a columnar manner. The continuous accumulation of its crystallization heat effect causes the subsequent molecular flow to nucleate and the potential barrier required for growth to continue to increase. When it decreases below the critical value, the crystal grains will be rapidly generated to form crystal nuclei and grow up, forming abnormally large grains. Before reaching the critical value, by regulating the environmental conditions required for the molecular flow core and growth mode, such as the temperature of the component body, the energy of the auxiliary enhancement source, and the deposition rate, the growth mode of the molecular flow on the component body 300 is realized. The change from columnar grain pattern to finely divided grain pattern reduces the generation of random large particles.

In addition to the above-mentioned physical vapor deposition process, the formation process of the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b may also be at least one of a chemical vapor deposition process or an atomic layer deposition process.

Although the present invention is disclosed as above, the present invention is not limited thereto. Anyone with ordinary knowledge in the technical field to which the present invention belongs can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the patent application scope.

300:Part body

301: Composite coating

301a: The first corrosion-resistant coating

301b: Second corrosion-resistant coating

Claims (24)

A semiconductor component, which includes: a component body; and a composite coating located on the surface of the component body, including a first corrosion-resistant coating and a second corrosion-resistant coating alternately arranged, the third corrosion-resistant coating The grain size of a corrosion-resistant coating is larger than the grain size of the second corrosion-resistant coating. The outermost layer of the composite coating and the part in contact with the component body are both the first corrosion-resistant coating, and the second corrosion-resistant coating. The corrosion-resistant coating is used to inhibit the grain growth size of the first corrosion-resistant coating. The semiconductor component according to claim 1, wherein the first corrosion-resistant coating and the second corrosion-resistant coating are made of the same or different materials. The semiconductor component according to claim 2, wherein the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline composite compounds formed by rare earth elements, oxygen and fluorine, and the rare earth elements, oxygen and fluorine form The crystalline composite compounds include: YOF, Y ₅ O ₄ F ₇ , Y ₆ O ₅ F ₈ , Y ₇ O ₆ F ₉ , Y ₁₇ O ₁₄ F ₂₃ ,LaOF, CeOF, CeO ₆ F ₂ ,PrOF, NdOF, SmOF ,EuOF,Eu ₃ O ₂ F ₅ ,Eu ₅ O ₄ F ₇ ,GdOF,Gd ₅ O ₄ F ₇ ,TbOF,DyOF,HoOF,ErOF,Er 3 O 2 F ₅ ,Er _{5 O 4 F 7 ,} TmOF, At least one of YbOF, Yb ₅ O ₄ F ₇ , Yb ₆ O ₅ F ₈ , LuOF, Lu ₃ O ₂ F ₅ , Lu ₅ O ₄ F ₇ or Lu ₇ O ₆ F ₉ . The semiconductor component according to claim 2, wherein the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline composite compounds formed by rare earth elements and aluminum oxide, and the crystals formed by the rare earth elements and aluminum oxide Composite compounds include: Y ₄ Al ₂ O ₉ , YAlO ₃ , Y ₃ Al ₅ O ₁₂ , LaAlO ₃ , CeAlO ₃ , Ce ₆ AlO ₃ , Pr ₄ Al ₂ O ₉ , PrAlO ₃ , PrAl ₁₁ O ₁₈ , Nd ₄ Al ₂ O ₉ ,NdAlO ₃ ,NdAl ₁₁ O ₁₈ ,Sm ₄ Al ₂ O ₉ ,SmAlO ₃ ,Eu ₄ Al ₂ O ₉ ,EuAlO ₃ ,Eu ₃ Al ₅ O ₁₂ ,Gd ₄ Al ₂ O ₉ ,GdAlO ₃ ,Gd ₃ Al ₅ O ₁₂ ,Tb ₄ Al ₂ O ₉ ,TbAlO ₃ ,Tb _{3 Al 5 O 12 ,Dy 4 Al 2 O 9 , DyAlO 3} ,Dy ₃ Al ₅ O ₁₂ ,Ho ₄ Al ₂ O ₉ ,HoAlO ₃ , _{Ho 3} Al ₅ O ₁₂ ,Er _{4 Al 2} O ₉ ,ErAlO ₃ ,Er ₃ Al 5 O 12 ,Tm ₄ Al ₂ O ₉ ,TmAlO ₃ ,Tm ₃ Al ₅ O ₁₂ ,Yb ₄ Al ₂ O ₉ ,Yb ₆ At least one of Al ₁₀ O ₂₄ , Lu ₄ Al ₂ O ₉ , LuAlO ₃ or Lu ₃ Al ₅ O ₁₂ . The semiconductor component according to claim 2, wherein the first corrosion-resistant coating and the second corrosion-resistant coating are a crystalline composite compound formed by a rare earth element and silicon oxide, and the crystalline compound formed by the rare earth element and silicon oxide Composite compounds include: Y ₂ SiO ₅ , Y ₂ Si ₂ O ₇ , La ₂ SiO ₅ , La ₂ Si ₂ O ₇ , Ce ₂ SiO ₅ , Pr ₂ SiO ₅ , Pr ₂ Si ₂ O ₇ , Nd ₂ SiO ₅ , Nd ₄ Si ₃ O ₁₂ ,Nd _{2 Si 2} O ₇ ,Sm ₂ SiO ₅ ,Sm ₄ Si 3 O ₁₂ ,Sm ₂ Si ₂ O ₇ ,Eu ₂ SiO ₅ ,EuSiO ₃ ,Eu ₂ Si ₂ O ₇ ,Gd ₂ SiO ₅ ,Gd ₄ Si ₃ O ₁₂ ,Gd ₂ Si ₂ O ₇ ,Tb ₂ SiO ₅ ,Tb ₂ Si ₂ O ₇ ,Dy ₂ SiO ₅ ,Dy ₄ Si ₃ O ₁₂ ,Dy ₂ Si ₂ O ₇ ,Ho ₂ SiO ₅ ,Er ₂ Si ₂ O ₇ ,Er ₂ SiO ₅ ,Er ₄ Si ₃ O ₁₂ ,Er ₂ Si ₂ O ₇ ,Tm ₂ SiO ₅ ,Tm ₂ Si ₂ O ₇ ,Yb ₂ SiO ₅ ,Yb ₄ Si ₃ At least one of O ₁₂ , Yb ₂ Si ₂ O ₇ , Lu ₂ SiO ₅ , Lu ₄ Si ₃ O ₁₂ or Lu ₂ Si ₂ O ₇ . The semiconductor component according to claim 2, wherein the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline oxides of rare earth metals, and the crystalline oxides of rare earth metals include LaO, La ₂ O ₃ ,CeO,Ce ₂ O ₃ ,CeO ₂ ,PrO,Pr ₂ O ₃ ,Pr ₆ O ₁₁ ,PrO ₂ ,NdO,Nd ₂ O ₃ ,SmO,Sm ₂ O ₃ ,EuO,Eu ₂ O ₃ ,Gd ₂ At least one of O ₃ , Tb ₂ O ₃ , Tb ₄ O ₇ , TbO ₂ , Dy ₂ O ₃ , Ho ₂ O ₃ , Er ₂ O ₃ , Tm ₂ O ₃ , YbO, Yb ₂ O ₃ or Lu ₂ O ₃ One kind. The semiconductor component according to claim 2, wherein the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline fluorides of rare earth metals, and the crystalline fluorides of rare earth metals include YF ₃ and LaF ₃ ,CeF ₃ ,CeF ₄ ,PrCl ₃ ,PrCl ₄ ,NdF ₃ ,SmF ₂ ,SmF ₃ ,EuF ₂ ,EuF ₃ ,GdF ₃ ,TbF ₃ ,TbF ₄ ,DyF ₃ ,HoF ₃ ,ErF ₃ ,TmF ₂ ,TmF ₃ , at least one of YbF ₃ or LuF ₃ . The semiconductor component according to claim 1, wherein the crystal grains of the first corrosion-resistant coating are columnar grains; and the crystal grains of the second corrosion-resistant coating are fine grains. The semiconductor component according to claim 1, wherein the size of the first corrosion-resistant coating in the grain width direction is greater than 100 nanometers; and the size of the second corrosion-resistant coating in the grain width direction is less than 100 nanometers. The semiconductor component according to claim 1, wherein the first corrosion-resistant coating has a thickness of 10 nanometers to 5000 nanometers; and the second corrosion-resistant coating has a thickness of 1 nanometers to 100 nanometers. The semiconductor component according to claim 1, wherein the first corrosion-resistant coating and the second corrosion-resistant coating have a crystalline structure or an amorphous structure. A plasma processing device, which includes: a reaction chamber, in which is a plasma environment; and a semiconductor component as described in any one of claim 1 to claim 11, located in the reaction chamber, exposed to this plasma environment. The plasma processing device according to claim 12, wherein the plasma environment contains at least one of fluorine, chlorine, oxygen or hydrogen plasma. The plasma processing device according to claim 12, wherein the plasma processing device is a plasma etching device or a plasma cleaning device. The plasma processing device of claim 14, wherein when the plasma processing device is an inductively coupled plasma processing device, the semiconductor components include: a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, and a gas pipe. At least one of a flange, an electrostatic chuck element, a cover ring, a focusing ring, an insulating ring, or a plasma confinement device. The plasma processing device of claim 14, wherein when the plasma processing device is a capacitively coupled plasma processing device, the semiconductor components include: a shower head, an upper ground ring, a moving ring, a gas distribution plate, At least one of a gas buffer plate, an electrostatic chuck element, a lower ground ring, a covering ring, a focusing ring, an insulating ring or a plasma confinement device. A method for forming a composite coating on the surface of a component body, which includes the following steps: providing a component body; forming a composite coating as described in any one of claims 1 to 11 on the surface of the component body layer, the composite coating includes a first corrosion-resistant coating and a second corrosion-resistant coating alternately arranged, the grain size of the first corrosion-resistant coating being larger than the grain size of the second corrosion-resistant coating, The outermost layer of the composite coating and the part in contact with the component body are both the first corrosion-resistant coating, and the second corrosion-resistant coating is used to inhibit the grain growth size of the first corrosion-resistant coating. The method of forming a composite coating on the surface of a component body as described in claim 17, wherein the formation process of the first corrosion-resistant coating and the second corrosion-resistant coating includes: physical vapor deposition process, chemical vapor deposition process At least one of a deposition process or an atomic layer deposition process. The method of forming a composite coating on the surface of a component body as described in claim 18, wherein the melting point of the composite coating is _Tm ; when the first corrosion-resistant coating and the second corrosion-resistant coating are formed in a process When the physical vapor deposition process is used, the temperature range for forming the first corrosion-resistant coating is: 1/3T _m ~1/2T _m , and the temperature range for forming the second corrosion-resistant coating is less than 1/3T _m . The method of forming a composite coating on the surface of a component body as described in claim 19, wherein when the material of the composite coating is yttrium oxide, the temperature range for forming the first corrosion-resistant coating is: 800 degrees Celsius ~ 1200 degrees Celsius degrees Celsius, the temperature range for forming the second corrosion-resistant coating is less than 800 degrees Celsius. The method of forming a composite coating on the surface of a component body as claimed in claim 18, wherein the rate at which the first corrosion-resistant coating is formed is a first rate, and the rate at which the second corrosion-resistant coating is formed is a first rate. Two speeds, the second speed is less than 1/2 of the first speed. The method of forming a composite coating on the surface of a component body as described in claim 21, wherein when the composite coating is yttrium oxide, the range of the first rate is: 0.5 nm/s ~ 5 nm/s , the second rate ranges from 0.01 nanometer/second to 0.3 nanometer/second. The method of forming a composite coating on the surface of a component body as described in claim 18, wherein the process of forming the composite coating further includes: processing using an auxiliary enhancement source; the auxiliary enhancement source includes: a plasma source , at least one of an ion beam source, a microwave source or a radio frequency source. The method for forming a composite coating on the surface of a component body as described in claim 23, wherein, under the action of the auxiliary enhancement source, the power to form the first corrosion-resistant coating is the first power, and the second corrosion-resistant coating is formed The power is the second power, and the second power is less than 1/2 of the first power.