TWI811625B - Chip-transferring method, chip-transferring device and image display - Google Patents

Abstract

A chip-transferring method, a chip-transferring device using the chip-transferring method and an image display produced by the chip-transferring method are provided. The chip-transferring method includes providing a circuit substrate and a chip structure, and the chip structure including a chip carrier and a plurality of chips disposed on the chip carrier; providing an insulating material between the circuit substrate and the chip carrier; curing a plurality of conductive solder layers so as to bonding the chips on the circuit substrate; and curing the insulating material. Therefore, a structural-strengthening layer can be formed between the circuit substrate and the chip carrier.

Description

Chip transfer method, chip transfer device and image display

The present invention relates to a transfer method, in particular to a wafer transfer method, a wafer transfer device using the wafer transfer method, and an image display produced by the wafer transfer method.

In the existing technology, the light-emitting diode chip can be moved from one carrier to another through the pick-and-place action of the suction nozzle or the pushing action of the ejector pin, and then through external heating methods (such as reflow ovens) ) Mount the light-emitting diode chip on the circuit substrate.

The technical problem to be solved by the present invention is to provide a wafer transfer method, a wafer transfer device and an image display in view of the shortcomings of the existing technology.

In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a wafer transfer method, which includes: providing a circuit substrate and a wafer structure. The wafer structure includes a wafer carrier and multiple components disposed on the wafer carrier. a chip; providing an insulating material between the circuit substrate and the chip carrier; curing a plurality of conductive soldering layers to fix the plurality of chips on the circuit substrate; and curing the insulating material to form a structural reinforcement layer between the circuit substrate and the chip carrier between wafer carriers.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide an image display, and the image display is manufactured by a wafer transfer method.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a wafer transfer device, and the wafer transfer device uses a wafer transfer method. The chip transfer device includes: a substrate carrying module, a wafer carrying module, a material providing module, a material curing module, a material removing module and a signal control module. The substrate carrying module is used to carry or move circuit substrates. The chip carrying module is used to carry or move the chip structure. The material supply module is used to provide insulating material filled between the circuit substrate and the chip carrier. The material curing module is used to cure insulation materials. Material removal modules are used to remove wafer carriers. The signal control module is electrically connected to the substrate carrying module, the chip carrying module, the material providing module, the material curing module and the material removing module.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a wafer transfer device, and the wafer transfer device uses a wafer transfer method. The chip transfer device includes: a substrate carrying module, a chip carrying module, a material providing module, a chip bonding module, a material curing module, a material removing module and a signal control module. The substrate carrying module is used to carry or move circuit substrates. The chip carrying module is used to carry or move the chip structure. The material providing module is used to provide insulating material formed between the circuit substrate and the chip carrier. The chip bonding module is used to fix multiple chips on the circuit substrate. The material curing module is used to cure insulation materials. Material removal modules are used to remove wafer carriers. The signal control module is electrically connected to the substrate carrying module, the chip carrying module, the material providing module, the chip bonding module, the material curing module and the material removing module.

One of the beneficial effects of the present invention is that the wafer transfer method provided by the present invention can be achieved by "providing a circuit substrate and a wafer structure. The wafer structure includes a wafer carrier and a plurality of wafers disposed on the wafer carrier." , "providing an insulating material between the circuit substrate and the chip carrier", "curing multiple conductive soldering layers to fix multiple chips on the circuit substrate" and "curing the insulating material" to form a structural reinforcement Layer between circuit substrate and chip carrier.

In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and illustration and are not used to limit the present invention.

The following is a description of the implementation of the "wafer transfer method, wafer transfer device and image display" disclosed in the present invention through specific embodiments. Those skilled in the art can understand the advantages and advantages of the present invention from the content disclosed in this specification. Effect. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only simple schematic illustrations and are not depictions based on actual dimensions, as is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the scope of the present invention. In addition, the term "or" used in this article shall include any one or combination of multiple associated listed items, depending on the actual situation.

As shown in Figures 1 to 15, the present invention provides a wafer transfer method, which includes: first, providing a circuit substrate 1 and a wafer structure 2. The wafer structure 2 includes a wafer carrier 20 and a wafer carrier 20. a plurality of wafers 21; then, an insulating material S is provided between the circuit substrate 1 and the chip carrier 20; then, the insulating material S is cured to form a structural reinforcement layer 3 between the circuit substrate 1 and the chip carrier 20. It is worth noting that the present invention further provides an image display manufactured by a wafer transfer method and a wafer transfer device using the wafer transfer method.

[First Embodiment]

Referring to FIGS. 1 to 8 , a first embodiment of the present invention provides a chip transfer method, which includes: first, as shown in FIGS. 1 and 2 , a circuit substrate 1 and a chip structure 2 are provided. The chip structure 2 It includes a wafer carrier 20 and a plurality of wafers 21 arranged on the wafer carrier 20 (step S100); then, as shown in FIGS. 1, 2 and 3, the wafer structure 2 and the circuit substrate 1 are brought close to each other to connect the multiple wafers 21. A chip 21 is placed on the circuit substrate 1 (step S102); then, as shown in FIGS. 1 and 3, the insulating material S is filled between the circuit substrate 1 and the chip carrier 20 (step S104); next, as shown in FIG. 1. As shown in Figures 3 and 4 (or in combination with Figures 1, 3 and 5), multiple chips 21 and the cured insulating material S are simultaneously fixed, and the insulating material S is cured to form a structural reinforcement layer 3 on the circuit substrate 1 and the chip carrier 20 (step S106); then, as shown in FIGS. 1, 7 and 8, the chip carrier 20 is removed, leaving a plurality of chips 21 on the circuit substrate 1 (step S108). It is worth noting that since the structural reinforcement layer 3 can be pre-formed between the circuit substrate 1 and the wafer carrier 20 , in step S108 of removing the wafer carrier 20 , the plurality of wafers 21 can be stabilized through the structural reinforcement layer 3 The ground is fixed on the circuit board 1.

For example, as shown in FIG. 8 , when the plurality of chips 21 are light-emitting diode chips, the plurality of chips 21 can respectively cooperate with the use of multiple wavelength conversion layers to provide an image information. Therefore, the first embodiment of the present invention It is possible to further provide an image display produced by the wafer transfer method. In addition, when the insulating material S used in the image display is an opaque material, the structural reinforcement layer 3 can be used as an opaque isolation layer (for example, as the structural reinforcement layer 3 of the black matrix). However, the present invention is not limited to the above examples.

For example, as shown in Figures 2 to 7, the first embodiment of the present invention provides a wafer transfer device using a wafer transfer method, which includes: a substrate carrying module M1, a wafer carrying module M2, a The material supply module M3, a material curing module M5, a material removal module M6 and a signal control module M7. Furthermore, as shown in FIGS. 2 , 3 and 6 , the substrate carrying module M1 can be used to carry or move the circuit substrate 1 , and the chip carrying module M2 can be used to carry or move the chip structure 2 . As shown in FIG. 3 , the material supply module M3 can be used to provide the insulating material S filled between the circuit substrate 1 and the chip carrier 20 . As shown in Figure 4 or Figure 5, the material curing module M5 can be used to cure the insulating material S. As shown in FIGS. 7 and 8 , the material removal module M6 can be used to remove the wafer carrier 20 . As shown in Figures 2 to 7, the signal control module M7 can be electrically connected to the substrate carrying module M1, the chip carrying module M2, the material providing module M3, the material curing module M5 and the material removing module M6. However, the present invention is not limited to the above examples.

For example, as shown in FIGS. 2 and 3 , in the step S100 of providing the circuit substrate 1 and the chip structure 2 and in the step S102 of bringing the chip structure 2 and the circuit substrate 1 close to each other, the circuit substrate 1 may be through a substrate. The wafer carrying module M1 is carried or moved, and the wafer structure 2 may be carried or moved through a wafer carrying module M2. Furthermore, as shown in FIG. 3 , in the step S104 of filling the insulating material S between the circuit substrate 1 and the chip carrier 20 , the insulating material S may be provided through a material supply module M3 and filled in the circuit substrate. 1 and the wafer carrier 20, and the insulating material S may be a semi-cured material or a completely uncured material. In addition, as shown in FIGS. 3 and 4 (or FIGS. 3 and 5 ), in the step S106 of curing the insulating material S, the insulating material S may be cured through a material curing module M5 . In addition, as shown in FIGS. 7 and 8 , in the step S108 of removing the chip carrier 20 , the chip carrier 20 may be removed through a material removal module M6 , and the removal method of the chip carrier 20 may be Being dissolved or peeled. However, the present invention is not limited to the above examples.

For example, as shown in FIG. 3 , the step S104 of filling the insulating material S between the circuit substrate 1 and the wafer carrier 20 further includes: filling the insulating material S between the plurality of wafers 21 so that each wafer 21 A surrounding surface 2101 of is covered with insulating material S. Furthermore, as shown in Figures 3, 4 and 5, the step S106 of curing the insulating material S further includes: curing the insulating material S through the irradiation of the projection light source generated by the material curing module M5. The material curing module M5 can It is an infrared generation module R for generating an infrared light source (as shown in Figure 4) or a laser light generation module L for generating a laser light source (as shown in Figure 5), and the insulating material S can be A light-curing material or a heat-curing material. In addition, as shown in Figures 3 and 4 (or Figures 3 and 5), the step S106 of curing the insulating material S further includes: curing a plurality of conductive solder layers B to fix a plurality of wafers 21 on the circuit substrate 1, And each conductive soldering layer B is located between a conductive contact 211 of the corresponding chip 21 and a conductive soldering pad 100 of the circuit substrate 1 . In addition, as shown in FIGS. 6 and 7 , before the step S108 of removing the wafer carrier 20 , the wafer transfer method further includes: separating the wafer carrier module M2 from the wafer structure 2 so that the wafer carrier 20 is exposed. . However, the present invention is not limited to the above examples.

For example, as shown in Figure 3 and Figure 8, when the insulating material S is an opaque material, the structural reinforcement layer 3 can be used as an opaque isolation layer (for example, as a white matrix structural reinforcement layer 3) It is used so that the light-emitting diode packaging structure produced by the wafer transfer method can be used as a "backlight module" that can be applied to image displays. However, the present invention is not limited to the above examples.

For example, as shown in FIGS. 2 , 3 and 8 , the circuit substrate 1 includes a plurality of conductive pads 100 , and each chip 21 includes a light-emitting body 210 and two disposed on the bottom of the light-emitting body 210 . The conductive contacts 211 and the two conductive welding layers B respectively provided on the two conductive contacts 211 . That is to say, as shown in FIG. 2 , before the step S102 of placing the plurality of wafers 21 on the circuit substrate 1 , two conductive soldering layers B will be respectively formed on the two conductive contacts 211 in advance. In addition, as shown in FIG. 3 , after the step S102 of placing multiple wafers 21 on the circuit substrate 1 , the two conductive soldering layers B of each wafer 21 will electrically contact the corresponding two conductive soldering pads 100 respectively. . It is worth noting that, as shown in FIG. 8 , a peripheral surface 2101 of each wafer 21 will be covered by the structural reinforcement layer 3 , and an upper surface 2102 of each wafer 21 and an upper surface 3000 of the structural reinforcement layer 3 will be in contact with each other. flush with each other. However, the present invention is not limited to the above examples.

For example, as shown in FIG. 8 , the circuit substrate 1 includes a plurality of conductive pads 100 , and each chip 21 includes a light-emitting body 210 and two conductive contacts 211 disposed on the bottom end of the light-emitting body 210 (but Two conductive solder layers B) are not included. That is to say, before step S102 of placing the plurality of wafers 21 on the circuit substrate 1 , two conductive soldering layers B will be formed in advance on the corresponding two conductive soldering pads 100 (not shown). In addition, after the step S102 of placing the plurality of chips 21 on the circuit substrate 1, the two conductive contacts 211 of each chip 21 will be electrically connected to the corresponding two through the two conductive soldering layers B. Conductive pad 100. However, the present invention is not limited to the above examples.

[Second Embodiment]

Referring to Figure 1 and Figures 9 to 15, a second embodiment of the present invention provides a chip transfer method, which includes: first, as shown in Figures 1 and 9, a circuit substrate 1 and a chip structure 2 are provided. The wafer structure 2 includes a wafer carrier 20 and a plurality of wafers 21 disposed on the wafer carrier 20 (step S200); then, as shown in Figures 1 and 9, the insulating material S is formed on the circuit substrate 1 (step S202) ; Then, as shown in Figures 1 and 10, the chip structure 2 and the circuit substrate 1 are brought close to each other, so that multiple wafers 21 are placed on the circuit substrate 1, so that the insulating material S is located between the circuit substrate 1 and the chip carrier 20 time (step S204); next, as shown in Figures 1 and 11, the plurality of wafers 21 are fixed on the circuit substrate 1 (step S206); then, as shown in Figures 1 and 12, the insulating material S is cured , to form a structural reinforcement layer 3 between the circuit substrate 1 and the chip carrier 20 (step S208); then, as shown in FIGS. 1, 14 and 15, the chip carrier 20 is removed, leaving a plurality of chips 21. on the circuit board 1 (step S210). It is worth noting that since the structural strengthening layer 3 can be pre-formed between the circuit substrate 1 and the wafer carrier 20 , in the step S210 of removing the wafer carrier 20 , the plurality of wafers 21 can be stabilized through the structural strengthening layer 3 The ground is fixed on the circuit board 1.

For example, as shown in Figure 15, when the plurality of chips 21 are light-emitting diode chips, the plurality of chips 21 can respectively cooperate with the use of multiple wavelength conversion layers to provide an image information. Therefore, the second embodiment of the present invention It is possible to further provide an image display produced by the wafer transfer method. In addition, when the insulating material S used in the image display is an opaque material, the structural reinforcement layer 3 can be used as an opaque isolation layer (for example, as the structural reinforcement layer 3 of the black matrix). However, the present invention is not limited to the above examples.

For example, as shown in Figures 9 to 14, the second embodiment of the present invention provides a wafer transfer device using a wafer transfer method, which includes: a substrate carrying module M1, a wafer carrying module M2, a The material supply module M3, a chip bonding module M4, a material curing module M5, a material removal module M6 and a signal control module M7. From a comparison of Figures 2 to 7 and Figures 9 to 14, it can be seen that for the wafer transfer device, the biggest difference between the second embodiment of the present invention and the first embodiment is: first, as shown in Figure 10, due to the material The providing module M3 can be used to provide the insulating material S formed between the circuit substrate 1 and the chip carrier 20 . Therefore, in the step S202 of forming the insulating material S on the circuit substrate 1 , the insulating material S may be provided through a material. The module M3 is provided and formed on the circuit substrate 1, and the insulating material S may be a semi-cured material or a completely uncured material. Furthermore, as shown in FIG. 11 , since the wafer bonding module M4 can be used to fix the plurality of wafers 21 on the circuit substrate 1 , in step S206 of fixing the plurality of wafers 21 on the circuit substrate 1 , many The chip 21 may be fixed on the circuit substrate 1 through a chip bonding module M4. In addition, as shown in FIG. 12 , since the material curing module M5 can be used to cure the insulating material S, in step S208 of curing the insulating material S, the insulating material S can be cured through a material curing module M5 . In addition, as shown in Figures 9 to 14, the signal control module M7 can be electrically connected to the substrate carrying module M1, the chip carrying module M2, the material providing module M3, the chip solidifying module M4, and the material curing module. M5 and the material removal module M6. However, the present invention is not limited to the above examples.

For example, as shown in FIG. 11 , the step S206 of fixing the plurality of chips 21 on the circuit substrate 1 further includes: irradiating the plurality of conductive soldering layers B through the projection light source generated by the chip bonding module M4 to connect the plurality of conductive soldering layers B. A chip 21 is fixed on the circuit substrate 1. Furthermore, the chip bonding module M4 can be a laser light generation module L for generating a laser light source or an infrared generation module R for generating an infrared light source, and each conductive soldering layer B is located Between a conductive contact 211 of the corresponding chip 21 and a conductive pad 100 of the circuit substrate 1 . In addition, as shown in FIG. 12 , the step S208 of curing the insulating material S further includes: curing the insulating material S through the irradiation of the projection light source generated by the material curing module M5. Furthermore, the material curing module M5 can be an infrared generating module R for generating an infrared light source or an ultraviolet light generating module U for generating an ultraviolet light source, and the insulating material S can be a photocuring material. Or a heat curable material. It is worth noting that the material curing module M5 can also be a laser light generating module L used to generate a laser light source. In addition, as shown in FIG. 13 , before the step S210 of removing the wafer carrier 20 , the wafer transfer method further includes: separating the wafer carrying module M2 from the wafer structure 2 so that the wafer carrier 20 is exposed. However, the present invention is not limited to the above examples.

For example, as shown in Figures 9 and 15, when the insulating material S is an opaque material, the structural reinforcement layer 3 can be used as an opaque isolation layer (for example, as a white matrix structural reinforcement layer 3) It is used so that the light-emitting diode packaging structure produced by the wafer transfer method can be used as a "backlight module" that can be applied to image displays. However, the present invention is not limited to the above examples.

For example, as shown in FIG. 9 , FIG. 10 and FIG. 15 , the circuit substrate 1 includes a plurality of conductive pads 100 , and each chip 21 includes a light-emitting body 210 and two disposed on the bottom end of the light-emitting body 210 The conductive contacts 211 and the two conductive welding layers B respectively provided on the two conductive contacts 211 . That is to say, as shown in FIG. 9 , before the step S204 of placing the plurality of wafers 21 on the circuit substrate 1 , two conductive soldering layers B will be respectively formed on the two conductive contacts 211 in advance. In addition, as shown in FIG. 10 , after step S204 of placing multiple wafers 21 on the circuit substrate 1 , the two conductive soldering layers B of each wafer 21 will electrically contact the corresponding two conductive soldering pads 100 respectively. . It is worth noting that, as shown in FIG. 15 , a peripheral surface 2101 of each wafer 21 will be covered by the structural reinforcement layer 3 , and an upper surface 2102 of each wafer 21 and an upper surface 3000 of the structural reinforcement layer 3 will be in contact with each other. flush with each other. However, the present invention is not limited to the above examples.

For example, as shown in FIG. 15 , the circuit substrate 1 includes a plurality of conductive pads 100 , and each chip 21 includes a light-emitting body 210 and two conductive contacts 211 disposed on the bottom end of the light-emitting body 210 (but Two conductive solder layers B) are not included. That is to say, before step S102 of placing the plurality of wafers 21 on the circuit substrate 1 , two conductive soldering layers B will be formed in advance on the corresponding two conductive soldering pads 100 (not shown). In addition, after step S204 of placing the plurality of chips 21 on the circuit substrate 1, the two conductive contacts 211 of each chip 21 will be electrically connected to the corresponding two through the two conductive soldering layers B. Conductive pad 100. However, the present invention is not limited to the above examples.

[Beneficial effects of the embodiment]

One of the beneficial effects of the present invention is that the wafer transfer method provided by the present invention can be achieved by "providing a circuit substrate 1 and a wafer structure 2. The wafer structure 2 includes a wafer carrier 20 and is disposed on the wafer carrier 20 a plurality of wafers 21", "providing an insulating material S between the circuit substrate 1 and the wafer carrier 20", "curing a plurality of conductive soldering layers B to fix the plurality of wafers 21 on the circuit substrate 1" and "curing The technical solution of the insulating material S" is to form a structural reinforcement layer 3 between the circuit substrate 1 and the chip carrier 20.

The contents disclosed above are only preferred and feasible embodiments of the present invention, and do not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

M1: Substrate carrying module M2: Chip carrying module M3: Material providing module M4: Chip solid module M5: Material solidification module M6: Material removal module M7: Signal control module R: Infrared generation module L: Laser light generation module U: UV light generation module 1:Circuit substrate 100: Conductive pad 2: Chip structure 20:Chip carrier 21:wafer 2101:surrounding surface 2102: Upper surface 210: Luminous body 211: Conductive contact B: Conductive soldering layer 3:Structural reinforcement layer 3000: Upper surface S: Insulating material

FIG. 1 is a flow chart of a wafer transfer method provided by the first and second embodiments of the present invention.

FIG. 2 is a schematic diagram of step S100 of the wafer transfer method provided by the first embodiment of the present invention.

FIG. 3 is a schematic diagram of steps S102 and S104 of the wafer transfer method provided by the first embodiment of the present invention.

4 is a schematic diagram of step S106 of the wafer transfer method provided by the first embodiment of the present invention using an infrared generation module or an ultraviolet generation module.

FIG. 5 is a schematic diagram of using a laser light generating module in step S106 of the wafer transfer method provided by the first embodiment of the present invention.

FIG. 6 is a schematic diagram of separating the wafer carrying module from the wafer structure in the wafer transfer method provided by the first embodiment of the present invention.

FIG. 7 is a schematic diagram before step S108 of the wafer transfer method according to the first embodiment of the present invention is executed.

FIG. 8 is a schematic diagram after step S108 of the wafer transfer method provided by the first embodiment of the present invention is executed.

FIG. 9 is a schematic diagram of step S200 and step S202 of the wafer transfer method provided by the second embodiment of the present invention.

FIG. 10 is a schematic diagram of step S204 of the wafer transfer method provided by the second embodiment of the present invention.

FIG. 11 is a schematic diagram of step S206 of the wafer transfer method provided by the second embodiment of the present invention.

FIG. 12 is a schematic diagram of step S208 of the wafer transfer method provided by the second embodiment of the present invention.

FIG. 13 is a schematic diagram of separating the wafer carrying module from the wafer structure in the wafer transfer method provided by the second embodiment of the present invention.

FIG. 14 is a schematic diagram before step S210 of the wafer transfer method provided by the second embodiment of the present invention is performed.

FIG. 15 is a schematic diagram after step S210 of the wafer transfer method provided by the second embodiment of the present invention is executed.

Claims (12)

A wafer transfer method, which includes: providing a circuit substrate and a wafer structure, the wafer structure including a wafer carrier and a plurality of wafers arranged on the wafer carrier; providing an insulating material between the circuit substrate and the wafer carrier between the chip carriers; solidify a plurality of conductive soldering layers to fix a plurality of chips on the circuit substrate; and solidify the insulating material to form a structural reinforcement layer between the circuit substrate and the chip between the carriers, wherein the structural strengthening layer covers the side surfaces of the plurality of wafers, and the upper surface of each wafer facing away from the circuit substrate and the upper surface of the structural strengthening layer facing away from the circuit substrate flush with each other. The wafer transfer method of claim 1, wherein the step of providing the insulating material between the circuit substrate and the wafer carrier further includes: bringing the wafer structure and the circuit substrate close to each other, so as to placing a plurality of the wafers on the circuit substrate; and filling the insulating material between the circuit substrate and the wafer carrier. The wafer transfer method of claim 1, wherein the step of providing the insulating material between the circuit substrate and the wafer carrier further includes: forming the insulating material on the circuit substrate; and The wafer structure and the circuit substrate are brought close to each other to place a plurality of the wafers on the circuit substrate with the insulating material between the circuit substrate and the wafer carrier. The wafer transfer method of claim 1, wherein after the step of curing the insulating material, the wafer transfer method further includes: removing the wafer carrier, leaving a plurality of the wafers on the circuit substrate. The wafer transfer method according to claim 1, wherein the step of fixing a plurality of the wafers on the circuit substrate further includes: irradiating a plurality of the conductive wafers through a projection light source generated by a wafer mounting module. Welding layer to fix a plurality of wafers on the circuit substrate; wherein, the wafer solidification module is a laser light generation module for generating a laser light source or an infrared ray for generating an infrared light source. Generate modules. The wafer transfer method according to claim 1, wherein the step of curing the insulating material further includes: curing the insulating material through irradiation of a projection light source generated by a material curing module; wherein the material is cured The module is an infrared generating module for generating an infrared light source, a laser light generating module for generating a laser light source, or an ultraviolet light generating module for generating an ultraviolet light source, and the insulating material is a light curing material or a thermally curing material. The wafer transfer method according to claim 1, wherein the insulating material is a semi-cured material or a completely uncured material. The wafer transfer method according to claim 1, wherein the insulating material is a light-transmitting material or an opaque material. The wafer transfer method according to claim 8, wherein the insulating material is an opaque material, and the opaque material is a black material or a white material. An image display manufactured by the wafer transfer method described in claim 1. A wafer transfer device, the wafer transfer device uses the wafer transfer method as described in claim 1, the wafer transfer device includes: a substrate carrying module, the substrate carrying module is used to carry or move The circuit substrate; a wafer carrying module, the wafer carrying module is used to carry or move the wafer structure; a material providing module, the material providing module is used to provide filling between the circuit substrate and the The insulating material between the wafer carriers; a material curing module, the material curing module is used to cure the insulating material to form the structural reinforcement layer covering the sides of the plurality of wafers, wherein The upper surface of each chip facing away from the circuit substrate and the upper surface of the structural reinforcement layer facing away from the circuit substrate are flush with each other; and a signal control module, the signal control module is electrically connected to The substrate carrying module, the wafer carrying module, the material providing module and the material curing module. The wafer transfer device according to claim 11, further comprising: a wafer bonding module, the wafer bonding module is used to fix a plurality of the wafers on the circuit substrate; and a material removal module A module for removing the wafer carrier.

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